US5496437A - Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films - Google Patents
Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films Download PDFInfo
- Publication number
- US5496437A US5496437A US08/075,059 US7505993A US5496437A US 5496437 A US5496437 A US 5496437A US 7505993 A US7505993 A US 7505993A US 5496437 A US5496437 A US 5496437A
- Authority
- US
- United States
- Prior art keywords
- ruo
- etch
- etching
- chamber
- pzt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 229910052451 lead zirconate titanate Inorganic materials 0.000 title claims abstract description 56
- 238000001020 plasma etching Methods 0.000 title claims abstract description 27
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 title claims abstract description 8
- 239000010409 thin film Substances 0.000 title description 9
- 229910001925 ruthenium oxide Inorganic materials 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 50
- 230000008569 process Effects 0.000 abstract description 17
- QPAXMPYBNSHKAK-UHFFFAOYSA-N chloro(difluoro)methane Chemical compound F[C](F)Cl QPAXMPYBNSHKAK-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 55
- 239000010408 film Substances 0.000 description 34
- 230000000694 effects Effects 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 210000002381 plasma Anatomy 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 11
- 239000000460 chlorine Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 8
- 238000010849 ion bombardment Methods 0.000 description 8
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 7
- 150000001805 chlorine compounds Chemical class 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 229910052726 zirconium Inorganic materials 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 150000002222 fluorine compounds Chemical class 0.000 description 5
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 5
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910001927 ruthenium tetroxide Inorganic materials 0.000 description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- XPGAWFIWCWKDDL-UHFFFAOYSA-N propan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] XPGAWFIWCWKDDL-UHFFFAOYSA-N 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910007932 ZrCl4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
ER=k+F(V.sub.sb)+[Cl*]exp(-E.sub.a /RT.sub.s) (1)
ER=k[Cl*]exp(-E.sub.a /RT.sub.s) (2)
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/075,059 US5496437A (en) | 1993-06-10 | 1993-06-10 | Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films |
US08/096,171 US5382320A (en) | 1993-06-10 | 1993-07-22 | Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF3 or CHCl2 CF3 as an etch gas |
JP5333826A JP3010112B2 (en) | 1993-06-10 | 1993-12-27 | Reactive ion etching method for lead zirconate titanate and ruthenium oxide thin films and semiconductor device manufactured using the same |
JP6128762A JP3010120B2 (en) | 1993-06-10 | 1994-06-10 | Reactive ion etching method for lead zirconate titanate and ruthenium oxide thin films and semiconductor device manufactured using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/075,059 US5496437A (en) | 1993-06-10 | 1993-06-10 | Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/096,171 Continuation-In-Part US5382320A (en) | 1993-06-10 | 1993-07-22 | Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF3 or CHCl2 CF3 as an etch gas |
Publications (1)
Publication Number | Publication Date |
---|---|
US5496437A true US5496437A (en) | 1996-03-05 |
Family
ID=22123283
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/075,059 Expired - Lifetime US5496437A (en) | 1993-06-10 | 1993-06-10 | Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films |
US08/096,171 Expired - Fee Related US5382320A (en) | 1993-06-10 | 1993-07-22 | Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF3 or CHCl2 CF3 as an etch gas |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/096,171 Expired - Fee Related US5382320A (en) | 1993-06-10 | 1993-07-22 | Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF3 or CHCl2 CF3 as an etch gas |
Country Status (2)
Country | Link |
---|---|
US (2) | US5496437A (en) |
JP (1) | JP3010112B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5736259A (en) * | 1994-03-17 | 1998-04-07 | Daicel Chemical Industries, Ltd. | Packing material for high-performance liquid chromatography and process for producing the same |
US5994153A (en) * | 1996-11-05 | 1999-11-30 | Sony Corporation | Fabrication process of a capacitor structure of semiconductor memory cell |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5653851A (en) * | 1994-07-05 | 1997-08-05 | Texas Instruments Incorporated | Method and apparatus for etching titanate with organic acid reagents |
US5776356A (en) * | 1994-07-27 | 1998-07-07 | Sharp Kabushiki Kaisha | Method for etching ferroelectric film |
JP2956485B2 (en) * | 1994-09-07 | 1999-10-04 | 日本電気株式会社 | Method for manufacturing semiconductor device |
KR960029903A (en) * | 1995-01-28 | 1996-08-17 | 김광호 | Etching Method of Ferroelectric Thin Film Using Reactive Ion Etching |
US5705443A (en) * | 1995-05-30 | 1998-01-06 | Advanced Technology Materials, Inc. | Etching method for refractory materials |
TW409152B (en) | 1996-06-13 | 2000-10-21 | Samsung Electronic | Etching gas composition for ferroelectric capacitor electrode film and method for etching a transition metal thin film |
DE19631622A1 (en) * | 1996-08-05 | 1998-02-12 | Siemens Ag | Process for plasma-assisted anisotropic etching of metals, metal oxides and their mixtures |
KR100468698B1 (en) * | 1997-12-16 | 2005-03-16 | 삼성전자주식회사 | Etching gas for ferroelectric film and fabrication method for ferroelectric capacitor using the same |
US6177351B1 (en) * | 1997-12-24 | 2001-01-23 | Texas Instruments Incorporated | Method and structure for etching a thin film perovskite layer |
US6537461B1 (en) * | 2000-04-24 | 2003-03-25 | Hitachi, Ltd. | Process for treating solid surface and substrate surface |
DE19856082C1 (en) * | 1998-12-04 | 2000-07-27 | Siemens Ag | Process for structuring a metal-containing layer |
US6613687B2 (en) | 2001-03-28 | 2003-09-02 | Lexmark International, Inc. | Reverse reactive ion patterning of metal oxide films |
JP4483231B2 (en) * | 2003-08-27 | 2010-06-16 | ソニー株式会社 | Method for manufacturing magnetic memory device |
WO2005031036A1 (en) * | 2003-09-26 | 2005-04-07 | National Institute Of Advanced Industrial Science And Technology | Ceramic film structure and forming method and device therefor |
JP2019169627A (en) * | 2018-03-23 | 2019-10-03 | 東京エレクトロン株式会社 | Etching method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4963701A (en) * | 1988-01-25 | 1990-10-16 | Kabushiki Kaisha Toshiba | Circuit board |
US5109357A (en) * | 1988-04-22 | 1992-04-28 | Ramtron Corporation | DRAM memory cell and method of operation thereof for transferring increased amount of charge to a bit line |
US5185689A (en) * | 1992-04-29 | 1993-02-09 | Motorola Inc. | Capacitor having a ruthenate electrode and method of formation |
US5254217A (en) * | 1992-07-27 | 1993-10-19 | Motorola, Inc. | Method for fabricating a semiconductor device having a conductive metal oxide |
-
1993
- 1993-06-10 US US08/075,059 patent/US5496437A/en not_active Expired - Lifetime
- 1993-07-22 US US08/096,171 patent/US5382320A/en not_active Expired - Fee Related
- 1993-12-27 JP JP5333826A patent/JP3010112B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4963701A (en) * | 1988-01-25 | 1990-10-16 | Kabushiki Kaisha Toshiba | Circuit board |
US5109357A (en) * | 1988-04-22 | 1992-04-28 | Ramtron Corporation | DRAM memory cell and method of operation thereof for transferring increased amount of charge to a bit line |
US5185689A (en) * | 1992-04-29 | 1993-02-09 | Motorola Inc. | Capacitor having a ruthenate electrode and method of formation |
US5254217A (en) * | 1992-07-27 | 1993-10-19 | Motorola, Inc. | Method for fabricating a semiconductor device having a conductive metal oxide |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5736259A (en) * | 1994-03-17 | 1998-04-07 | Daicel Chemical Industries, Ltd. | Packing material for high-performance liquid chromatography and process for producing the same |
US5994153A (en) * | 1996-11-05 | 1999-11-30 | Sony Corporation | Fabrication process of a capacitor structure of semiconductor memory cell |
Also Published As
Publication number | Publication date |
---|---|
JP3010112B2 (en) | 2000-02-14 |
JPH06349783A (en) | 1994-12-22 |
US5382320A (en) | 1995-01-17 |
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