US5384639A - Depth measurement of high aspect ratio structures - Google Patents
Depth measurement of high aspect ratio structures Download PDFInfo
- Publication number
- US5384639A US5384639A US08/063,109 US6310993A US5384639A US 5384639 A US5384639 A US 5384639A US 6310993 A US6310993 A US 6310993A US 5384639 A US5384639 A US 5384639A
- Authority
- US
- United States
- Prior art keywords
- set forth
- workpiece
- optical apparatus
- depth
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/22—Measuring arrangements characterised by the use of optical techniques for measuring depth
Abstract
Description
Claims (52)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/063,109 US5384639A (en) | 1992-05-13 | 1993-05-17 | Depth measurement of high aspect ratio structures |
US08/125,955 US5392118A (en) | 1992-05-13 | 1993-09-22 | Method for measuring a trench depth parameter of a material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88238692A | 1992-05-13 | 1992-05-13 | |
US08/063,109 US5384639A (en) | 1992-05-13 | 1993-05-17 | Depth measurement of high aspect ratio structures |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US88238692A Continuation-In-Part | 1992-05-13 | 1992-05-13 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/125,955 Continuation-In-Part US5392118A (en) | 1992-05-13 | 1993-09-22 | Method for measuring a trench depth parameter of a material |
Publications (1)
Publication Number | Publication Date |
---|---|
US5384639A true US5384639A (en) | 1995-01-24 |
Family
ID=25380455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/063,109 Expired - Lifetime US5384639A (en) | 1992-05-13 | 1993-05-17 | Depth measurement of high aspect ratio structures |
Country Status (2)
Country | Link |
---|---|
US (1) | US5384639A (en) |
JP (1) | JPH0797018B2 (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5691540A (en) * | 1996-04-30 | 1997-11-25 | Ibm Corporation | Assembly for measuring a trench depth parameter of a workpiece |
US5982489A (en) * | 1996-01-29 | 1999-11-09 | Nikon Corporation | Method and apparatus for measuring depth of a depression in a pattern by light interference from crossed light beams |
US6486965B1 (en) * | 1999-05-25 | 2002-11-26 | Hyundai Electronics Industries Co., Ltd. | Apparatus for measuring depth and gradient of trench in semiconductor device and method thereof |
US20030222049A1 (en) * | 1999-09-30 | 2003-12-04 | Lam Research | Methods and apparatuses for trench depth detection and control |
US20050003642A1 (en) * | 2003-05-03 | 2005-01-06 | Infineon Technologies Ag | Method for determining the depth of a buried structure |
US20050128487A1 (en) * | 2003-01-27 | 2005-06-16 | Zetetic Institute | Leaky guided wave modes used in interferometric confocal microscopy to measure properties of trenches |
US20060033924A1 (en) * | 2004-08-16 | 2006-02-16 | Zetetic Institute | Apparatus and method for joint and time delayed measurements of components of conjugated quadratures of fields of reflected/scattered and transmitted/scattered beams by an object in interferometry |
US20060050283A1 (en) * | 2004-08-19 | 2006-03-09 | Zetetic Institute | Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers |
US20060066873A1 (en) * | 2004-09-20 | 2006-03-30 | Zetetic Institute | Catoptric imaging systems comprising pellicle and/or aperture-array beam-splitters and non-adaptive and/or adaptive catoptric surfaces |
US20060072204A1 (en) * | 2003-09-26 | 2006-04-06 | Zetetic Institute | Catoptric and catadioptric imaging systems with pellicle and aperture-array beam-splitters and non-adaptive and adaptive catoptric surfaces |
US20070172965A1 (en) * | 2006-01-23 | 2007-07-26 | Kangguo Cheng | Non-destructive trench volume determination and trench capacitance projection |
US7369235B1 (en) | 2005-06-24 | 2008-05-06 | Kla-Tencor Corporation | Method and system for measuring deep trenches in silicon |
CN106767493A (en) * | 2016-12-05 | 2017-05-31 | 南京理工大学 | A kind of variable reference face pit depth measuring method |
KR20230159594A (en) | 2021-04-28 | 2023-11-21 | 아사히 가세이 가부시키가이샤 | Method for producing dialkyl carbonate and apparatus for producing dialkyl carbonate |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113137933A (en) * | 2021-03-23 | 2021-07-20 | 东莞市小可智能设备科技有限公司 | Fisheye PIN stitch measuring device and method |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3808878A (en) * | 1971-03-19 | 1974-05-07 | Europ Rotogravure Ass | Method for sensing the depth of cellular pits formed in a material layer |
US3873211A (en) * | 1974-01-23 | 1975-03-25 | Eastman Kodak Co | Hole measurer controller |
US4155098A (en) * | 1977-06-28 | 1979-05-15 | Rca Corporation | Groove depth estimation system using diffractive groove effects |
US4180830A (en) * | 1977-06-28 | 1979-12-25 | Rca Corporation | Depth estimation system using diffractive effects of the grooves and signal elements in the grooves |
US4408884A (en) * | 1981-06-29 | 1983-10-11 | Rca Corporation | Optical measurements of fine line parameters in integrated circuit processes |
US4454001A (en) * | 1982-08-27 | 1984-06-12 | At&T Bell Laboratories | Interferometric method and apparatus for measuring etch rate and fabricating devices |
US4615620A (en) * | 1983-12-26 | 1986-10-07 | Hitachi, Ltd. | Apparatus for measuring the depth of fine engraved patterns |
US4660979A (en) * | 1984-08-17 | 1987-04-28 | At&T Technologies, Inc. | Method and apparatus for automatically measuring semiconductor etching process parameters |
JPS6385305A (en) * | 1986-09-29 | 1988-04-15 | Sharp Corp | Apparatus for measuring depth of fine groove |
US4744660A (en) * | 1985-04-12 | 1988-05-17 | Hitachi, Ltd. | Apparatus for measuring difference in shallow level |
JPH0251005A (en) * | 1988-08-12 | 1990-02-21 | Hitachi Ltd | Depth measuring method and apparatus |
US4964726A (en) * | 1988-09-27 | 1990-10-23 | General Electric Company | Apparatus and method for optical dimension measurement using interference of scattered electromagnetic energy |
US5087121A (en) * | 1987-12-01 | 1992-02-11 | Canon Kabushiki Kaisha | Depth/height measuring device |
-
1993
- 1993-04-22 JP JP5095712A patent/JPH0797018B2/en not_active Expired - Fee Related
- 1993-05-17 US US08/063,109 patent/US5384639A/en not_active Expired - Lifetime
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3808878A (en) * | 1971-03-19 | 1974-05-07 | Europ Rotogravure Ass | Method for sensing the depth of cellular pits formed in a material layer |
US3873211A (en) * | 1974-01-23 | 1975-03-25 | Eastman Kodak Co | Hole measurer controller |
US4155098A (en) * | 1977-06-28 | 1979-05-15 | Rca Corporation | Groove depth estimation system using diffractive groove effects |
US4180830A (en) * | 1977-06-28 | 1979-12-25 | Rca Corporation | Depth estimation system using diffractive effects of the grooves and signal elements in the grooves |
US4408884A (en) * | 1981-06-29 | 1983-10-11 | Rca Corporation | Optical measurements of fine line parameters in integrated circuit processes |
US4454001A (en) * | 1982-08-27 | 1984-06-12 | At&T Bell Laboratories | Interferometric method and apparatus for measuring etch rate and fabricating devices |
US4615620A (en) * | 1983-12-26 | 1986-10-07 | Hitachi, Ltd. | Apparatus for measuring the depth of fine engraved patterns |
US4660979A (en) * | 1984-08-17 | 1987-04-28 | At&T Technologies, Inc. | Method and apparatus for automatically measuring semiconductor etching process parameters |
US4744660A (en) * | 1985-04-12 | 1988-05-17 | Hitachi, Ltd. | Apparatus for measuring difference in shallow level |
JPS6385305A (en) * | 1986-09-29 | 1988-04-15 | Sharp Corp | Apparatus for measuring depth of fine groove |
US5087121A (en) * | 1987-12-01 | 1992-02-11 | Canon Kabushiki Kaisha | Depth/height measuring device |
JPH0251005A (en) * | 1988-08-12 | 1990-02-21 | Hitachi Ltd | Depth measuring method and apparatus |
US4964726A (en) * | 1988-09-27 | 1990-10-23 | General Electric Company | Apparatus and method for optical dimension measurement using interference of scattered electromagnetic energy |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5982489A (en) * | 1996-01-29 | 1999-11-09 | Nikon Corporation | Method and apparatus for measuring depth of a depression in a pattern by light interference from crossed light beams |
US5691540A (en) * | 1996-04-30 | 1997-11-25 | Ibm Corporation | Assembly for measuring a trench depth parameter of a workpiece |
US6486965B1 (en) * | 1999-05-25 | 2002-11-26 | Hyundai Electronics Industries Co., Ltd. | Apparatus for measuring depth and gradient of trench in semiconductor device and method thereof |
US20030222049A1 (en) * | 1999-09-30 | 2003-12-04 | Lam Research | Methods and apparatuses for trench depth detection and control |
US6878301B2 (en) * | 1999-09-30 | 2005-04-12 | Lam Research | Methods and apparatuses for trench depth detection and control |
US20050128487A1 (en) * | 2003-01-27 | 2005-06-16 | Zetetic Institute | Leaky guided wave modes used in interferometric confocal microscopy to measure properties of trenches |
WO2004068065A3 (en) * | 2003-01-27 | 2005-11-10 | Zetetic Inst | Leaky guided-wave modes used in interferometric confocal microscopy to measure properties of trenches |
US7009712B2 (en) * | 2003-01-27 | 2006-03-07 | Zetetic Institute | Leaky guided wave modes used in interferometric confocal microscopy to measure properties of trenches |
US20050003642A1 (en) * | 2003-05-03 | 2005-01-06 | Infineon Technologies Ag | Method for determining the depth of a buried structure |
US7307735B2 (en) * | 2003-05-03 | 2007-12-11 | Infineon Technologies Ag | Method for determining the depth of a buried structure |
US20060072204A1 (en) * | 2003-09-26 | 2006-04-06 | Zetetic Institute | Catoptric and catadioptric imaging systems with pellicle and aperture-array beam-splitters and non-adaptive and adaptive catoptric surfaces |
US7180604B2 (en) | 2003-09-26 | 2007-02-20 | Zetetic Institute | Catoptric and catadioptric imaging systems with pellicle and aperture-array beam-splitters and non-adaptive and adaptive catoptric surfaces |
US7095508B2 (en) | 2003-09-26 | 2006-08-22 | Hill Henry A | Catoptric and catadioptric imaging systems with pellicle and aperture-array beam-splitters and non-adaptive and adaptive catoptric surfaces |
US20060092429A1 (en) * | 2003-09-26 | 2006-05-04 | Zetetic Institute | Catoptric and catadioptric imaging systems with pellicle and aperture-array beam-splitters and non-adaptive and adaptive catoptric surfaces |
US7161680B2 (en) | 2004-08-16 | 2007-01-09 | Zetetic Institute | Apparatus and method for joint and time delayed measurements of components of conjugated quadratures of fields of reflected/scattered and transmitted/scattered beams by an object in interferometry |
US20060033924A1 (en) * | 2004-08-16 | 2006-02-16 | Zetetic Institute | Apparatus and method for joint and time delayed measurements of components of conjugated quadratures of fields of reflected/scattered and transmitted/scattered beams by an object in interferometry |
US20060050283A1 (en) * | 2004-08-19 | 2006-03-09 | Zetetic Institute | Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers |
US7324216B2 (en) | 2004-08-19 | 2008-01-29 | Zetetic Institute | Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers |
US7145663B2 (en) | 2004-09-20 | 2006-12-05 | Zetetic Institute | Catoptric imaging systems comprising pellicle and/or aperture-array beam-splitters and non-adaptive and/or adaptive catoptric surfaces |
US20060066873A1 (en) * | 2004-09-20 | 2006-03-30 | Zetetic Institute | Catoptric imaging systems comprising pellicle and/or aperture-array beam-splitters and non-adaptive and/or adaptive catoptric surfaces |
US7369235B1 (en) | 2005-06-24 | 2008-05-06 | Kla-Tencor Corporation | Method and system for measuring deep trenches in silicon |
US20070172965A1 (en) * | 2006-01-23 | 2007-07-26 | Kangguo Cheng | Non-destructive trench volume determination and trench capacitance projection |
CN106767493A (en) * | 2016-12-05 | 2017-05-31 | 南京理工大学 | A kind of variable reference face pit depth measuring method |
CN106767493B (en) * | 2016-12-05 | 2019-01-18 | 南京理工大学 | A kind of variable reference face pit depth measurement method |
KR20230159594A (en) | 2021-04-28 | 2023-11-21 | 아사히 가세이 가부시키가이샤 | Method for producing dialkyl carbonate and apparatus for producing dialkyl carbonate |
Also Published As
Publication number | Publication date |
---|---|
JPH0634330A (en) | 1994-02-08 |
JPH0797018B2 (en) | 1995-10-18 |
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Legal Events
Date | Code | Title | Description |
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AS | Assignment |
Owner name: IBM CORPORATION, NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:WICKRAMASINGHE, HEMANTHA K.;REEL/FRAME:006606/0381 Effective date: 19930517 |
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Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., NETHERLANDS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INTERNATIONAL BUSINESS MACHINES CORPORATION;REEL/FRAME:016987/0468 Effective date: 20051129 |
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AS | Assignment |
Owner name: ADVANCED METROLOGY SYSTEMS LLC, MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KONINKLIJKE PHILIPS ELECTRONICS N.V.;REEL/FRAME:018454/0090 Effective date: 20061005 |
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