US5256443A - Method of producing metallic thin film sensors - Google Patents

Method of producing metallic thin film sensors Download PDF

Info

Publication number
US5256443A
US5256443A US07/883,666 US88366692A US5256443A US 5256443 A US5256443 A US 5256443A US 88366692 A US88366692 A US 88366692A US 5256443 A US5256443 A US 5256443A
Authority
US
United States
Prior art keywords
substrate
noble metal
thin film
sol solution
film layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US07/883,666
Inventor
Katsuhiko Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Horiba Ltd
Original Assignee
Horiba Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Horiba Ltd filed Critical Horiba Ltd
Assigned to HORIBA, LTD. reassignment HORIBA, LTD. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: TOMITA, KATSUHIKO
Application granted granted Critical
Publication of US5256443A publication Critical patent/US5256443A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208Oxides, e.g. ceramics
    • C23C18/1216Metal oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225Deposition of multilayers of inorganic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125Process of deposition of the inorganic material
    • C23C18/1279Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam

Definitions

  • the present invention relates to a method of producing a metallic thin film, for example, a thin film formed on a substrate by using noble metal alkoxides alone or metal alkoxides with noble metal oxides as the main components on additives to thereby improve a pH-response sensor, a hydrogen sensor, a gas sensor, and other various types of applications.
  • a vapor deposition method or a sputtering method has frequently been found advantageous in permitting a uniform thickness of a thin film to be applied relatively free of impurities.
  • the sputtering method is particularly suitable for a high melting point substance, for example, oxides. Problems have occurred, however, when a thin film is to be formed within a vacuum bell jar, since relatively complicated and expensive apparatus are required.
  • a metal oxide is selected as a target, it is usually necessary to regulate the purity of the oxide and if the target is porous, pretreatment is frequently required.
  • the present invention provides a method of producing a thin film of a mono-component or multi-component noble metal on a substrate in a relatively easy and inexpensive manner. This is accomplished by providing a substrate of an appropriate material, such as silicon or metals, such as Al, Au, Ti, or Ta. A sol solution containing at least a noble metal alkoxide is dissolved in, for example, an organic solvent. This sol solution, which can contain one or more noble metal alkoxides and base metals, depending on the desired application, can then coat the substrate with a predetermined thickness of the sol solution to provide a film layer on the substrate.
  • an appropriate material such as silicon or metals, such as Al, Au, Ti, or Ta.
  • a sol solution containing at least a noble metal alkoxide is dissolved in, for example, an organic solvent.
  • This sol solution which can contain one or more noble metal alkoxides and base metals, depending on the desired application, can then coat the substrate with a predetermined thickness of the sol solution to provide a film layer on
  • the coating can be accomplished, for example, by a spraying, an immersing, or even a drip method wherein the substrate is rotated and the sol solution is dripped onto the substrate at a controlled drip rate relative to a controlled rotation rate.
  • the coated substrate is then appropriately dried, for example, to a gelatinized state.
  • the coated substrate can then be heated or baked in one of a reductive atmosphere or an oxidative atmosphere to form a thin film of noble metal.
  • the sol solution can also be formed by mixing the noble metal alkoxide with acetic acid as a catalyzer in the presence of a nitrogen gas.
  • the noble metals can be selected from a group consisting of Au, Pt, Pd, Rh, Ir, Ru, Os, and Ag.
  • One or a plurality of film layers can be provided on the substrates, either by repeating each of the steps or preparing a sol solution, coating the substrate with that solution, drying the coated substrate, and then baking the substrate to form a first film layer with a subsequent repeating of the steps to provide a second film layer with a different noble metal.
  • the plurality of thin films can be provided by repeating the steps of preparing a sol solution of a different noble metal alkoxide, coating the substrate with one of the sol solutions, drying the coated substrate, and then repeating the coating of the substrate with a second solution.
  • the number of layers of thin film of coated solutions can then be repeated and after the desired number of layers have been deposited, the coated substrate with the multiple layers can then be heated to fix the multiple layers.
  • an appropriate substrate is provided and then coated with a sol solution containing isopropoxy iridium and pantaethoxy tantalum. This solution is coated on the substrate to a predetermined thickness to form a film layer. The film layer is then dried and subsequently heated in, for example, an oxidative atmosphere to form a metal oxide film Ta 2 O 5 with iridium.
  • FIG. 1 is a schematic flow chart showing the present invention
  • FIG. 2 is a schematic drawing showing a spin coating apparatus used in a first preferred embodiment
  • FIG. 3A and 3B are enlarged front views showing a substrate in the first preferred embodiment
  • FIG. 4 is a perspective view showing thin film-forming means a second preferred embodiment
  • FIG. 5 is an enlarged front view showing a substrate in the second preferred embodiment.
  • a noble metal alkoxide mixture comprising noble metal alkoxides A. B . . . X is selected depending upon the particular use, at a desired ratio.
  • the mixture is then dissolved in organic solvents to form a fluidic mixture solution of noble metal alkoxides (sol). This mixture solution is stirred enough to prepare a coating solution with the components homogenized.
  • the resulting thin film is formed on the surface of a substrate made of Si or metals, such as Al, Au, Ti, or Ta.
  • the particular method of forming the thin film on the substrate from the coating solution can be optionally selected.
  • a thin film made of the coating solution is dried by applying heat to cause the thin film to gelatinize at a thickness of about 1 ⁇ .
  • the dried thin film is then baked in a reductive atmosphere to form a final thin film of a thickness of about 1000 to 2000 ⁇ and made of a plurality of noble metals.
  • a thin film made of a plurality of noble metal oxides it can be baked in an oxidative atmosphere.
  • the pressure of the baking atmosphere can be at sea level.
  • the respective solutions of the noble metal alkoxides A, B . . . X may be prepared and then mixed.
  • the thin film made of a plurality of metal or metal oxide containing noble metals from the coating solution prepared by mixing at least one of these noble metal alkoxides A, B . . . X with base metal alkoxides suitably selected.
  • the multi-layer thin film can also be formed by repeating the formation of the thin film made of metals or metal oxides, as described above.
  • reference numeral 1 designates a spin coating apparatus comprising a turntable 2 revolved by means of a motor (not shown), and a nozzle 3 arranged above the center of the turntable 2 for applying the coating solution drop by drop.
  • Platinum alkoxides [Pt--(0-R)] (R: --CH 3 , --C 2 H 5 , --C 3 H 7 ) are dissolved in dehydrated ethyl alcohol in a quantity of 2.5% by weight.
  • a quantity equivalent in mol to the alkoxides of acetic acid is added to the resulting solution as a catalyzer to sufficiently stir and mix the solution in a stream of nitrogen to avoid contact with moisture, thereby preparing a first coating solution.
  • the first coating solution 5 is applied on the substrate 4 from the nozzle 3, drop by drop, at a rate of 100 to 200 ⁇ 1/ for about 30 seconds, followed by spin-coating the first coating solution on a surface of the substrate 4 to form a thin film 6a of about 1 ⁇ .
  • the thin film 6a is dried for 30 minutes at 100° to 150° C. It is then baked for 30 minutes at 600° C. in a reductive atmosphere to form a Pt thin film 6b on the surface of the substrate 4, as shown in FIG. 3(a) of about 1000 to 2000 ⁇ in thickness.
  • a second coating solution containing platinum alkoxides in a concentration of 5% by weight is prepared similarly to the first coating solution 5.
  • the substrate 4, shown in FIG. 4(A) is again placed on the turntable 2 with the Pt thin film 6b on an upper side (not shown) to spin-coat the second coating solution on the Pt thin film 6b in the same manner as the first coating solution 5, thereby forming a thin film 7a, made of the second coating solution on the Pt thin film 6b, as shown in FIG. 3(B).
  • the thin film 6b is dried under the same conditions as the thin film 6a. It is then baked for 30 minutes at 350° C. in the oxidative atmosphere to form a PtO thin film 7b, thereby forming a thin film made of noble metals.
  • the thin film oxidizes in a layer on the substrate 4.
  • the thin films 6a and 7a made of the first coating solution and the second coating solution containing platinum alkoxides, respectively, are formed in turn on the substrate 4. They are then baked in turn in a reductive, or oxidative, atmosphere to form a thin film made of noble metals and the thin film made of noble metal oxides in layers. This does not required complicated apparatus, and thus manufacturing expenses can be easily reduced.
  • the thickness of the thin film 6a and the thin film 7a, respectively, is determined by regulating the respective concentrations of the first coating solution and the second coating solution and a rotation frequency of the turntable 2.
  • the temperature in the reductive atmosphere is set within a range of 600° to 600° C.
  • that in the oxidative atmosphere is set within a range of 300° to 400° C.
  • Nz, Hz, and the like can be used as the reductive atmosphere.
  • the rotation frequency of the turntable 2 is set within a range of 3,000 to 5,000 rpm.
  • both thin films can also be formed in a single layer.
  • noble metal alkoxides forming these layers can be different from each other, and various kinds of metal alkoxides with noble metal alkoxides, as the main components or the additives, can be used. Additionally, a part of the plurality of layers of the thin film can be formed by using base metal alkoxides, or semiconductor alkoxides. It is therefore possible to form a multi-layer thin film in various types of combinations, such as metal oxide/noble metal oxide/noble metal, and noble metal/metal oxide/semiconductor, depending on the desired use of the multi-layer thin film.
  • a suitable quantity of isopropoxy iridium [Ir(OC 2 H 5 ) 5 ] as the noble metal alkoxides is added to pentaethoxy tantalum [Ta(OC 2 H 5 ) 5 , as a tantalum alkoxide [Ta-(O-R) 5 ], to prepare a coating solution in the same manner as in the first preferred embodiment.
  • reference numeral 10 designates a vessel housing the coating solution 11 therein.
  • the substrate 4 is immersed in the coating solution 11 and then withdrawn to form a thin film on the surface of the substrate 4. After it has dried, the thin film is baked in the oxidative atmosphere to form a metal oxide thin film 12, made of Ta 2 O 5 with Ir added on the substrate 4, as shown in FIG. 5.
  • the electrical resistance value of the metal oxide thin film 12 can be regulated within a range of a high-insulating valves to a low-insulating valves, for example, about 10 7 to 10 4 ⁇ , by varying the molar ratio of isopropoxy iridium added.
  • the metal oxide thin film 12 can be used, for example, as a pH sensor, but oxides of Ir and other noble metals can be added to exhibit a response to pH, even when influenced by the oxidation and the reduction, so that the added noble metal Ir can improve the response of the thin film 12, when it is used as a pH sensor.
  • oxides of Ir and other noble metals can be added to exhibit a response to pH, even when influenced by the oxidation and the reduction, so that the added noble metal Ir can improve the response of the thin film 12, when it is used as a pH sensor.
  • an ion concentration-measuring electrode superior in response can be constructed.
  • noble metal alkoxides may be used as the main components, and base metal alkoxides may be added to noble metal alkoxides.
  • the thin film is formed in a single layer on the substrate 4 in the second preferred embodiment, it may also be formed in a plurality of layers, as shown in the first preferred embodiment.
  • noble metal alkoxides can be optionally selected, depending upon the desired use. If the thin film made of a coating solution containing, for example, palladium alkoxides (Pd--O--R, R:--C 3 H 7 , --C 5 H 9 ) in a concentration of 10% by weight , dissolved in a dehydrated ethyl alcohol, is formed to be dried and baked, a porous metallic Pd thin film can be formed on a substrate of a MOSFET. The porous metallic Pd thin film can be used as a hydrogen sensor.
  • Pd--O--R, R:--C 3 H 7 , --C 5 H 9 palladium alkoxides
  • a Pt or PtO thin film is formed.
  • This Pt or PtO thin film can be used as a gas sensor by a catalytic action thereof.
  • Methanol, propanol, acetone, trichlene, acetyl acetone and the like may be used as organic solutions in addition to dehydrated ethyl alcohol.
  • alkoxides of Si, Lt, La, Ti, Ba are prepared to form a pH-responsive film, and if the thin film made of noble metal alkoxides is used as an oxidative layer, the adhesion of the oxidative layer to the glass-responsive film can be improved, thus preventing any subsequent separation.
  • a coating solution containing noble metal alkoxides, or metal alkoxides with noble metal alkoxides, as the main components, or as additives, is used and the resulting thin film is formed on the substrate.
  • the thin film is baked in the reductive or oxidative atmosphere to form the metallic or metal oxide thin film.
  • the coating solution containing the respective noble metal alkoxides, or noble metal alkoxides and base metal alkoxides in mixture is prepared to form the thin film. It is therefore unnecessary to use complicated and large-scaled apparatus for forming the multi-component thin film, and thus it is possible to easily and inexpensively produce the multi-component thin film. Since the coating solution contains noble metal alkoxides, or noble metal alkoxides and metal alkoxides in mixture, the crystalline and amorphous structure of the respective ingredients, or the compactness of the porous thin film can be easily controlled. Thus, it is possible to produce a thin film having a structure in accordance with the desired use.
  • a metallic thin film, or a metal oxide thin film which is formed from the solution of optional metal alkoxides in the same manner as the above-described metallic or metal oxide thin film, can be stacked in layers. It is therefore possible to produce the thin film, having a structure corresponding to various ways of using it, by, for example, selecting the components of the thin film and determining the number of layers in the thin file.

Abstract

A thin film made of a sol solution of noble metal alcoxides is formed on a substrate and then dried and baked in a reductive or oxidative atmosphere to produce a thin film of metals or metal oxides. The solution of noble metal alcoxides may contain merely a single component or a plurality of components. In addition, a solution of metal alcoxides with noble metal alcoxides as main components or additives may be used in place of the solution of noble metal alcoxides. The thin film of metals or metal oxides can be formed in a single layer or a plurality of layers on a substrate to improve, for example, the response of a sensor.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method of producing a metallic thin film, for example, a thin film formed on a substrate by using noble metal alkoxides alone or metal alkoxides with noble metal oxides as the main components on additives to thereby improve a pH-response sensor, a hydrogen sensor, a gas sensor, and other various types of applications.
2. Description of Related Art
Various methods have been known in the conventional art for applying a thin film to a substrate. For example, an evaporation method wherein a target is set within a vacuum bell jar has been utilized with the target being heated to a vaporization temperature to permit the resulting vapors to stick to a substrate, thereby forming a thin film. Additionally, a sputtering method wherein a target within a vacuum environment is struck, for example, by a glow discharge to thereby form a thin film on a substrate. An additional method of applying a thin film coating to a substrate is known wherein a metallic melt is prepared and a substrate is then immersed in the metallic melt to form a thin film followed by a subsequent drying and baking step. These methods of forming a thin metallic film are only illustrative of the attempts that have been made in the prior art.
A vapor deposition method or a sputtering method has frequently been found advantageous in permitting a uniform thickness of a thin film to be applied relatively free of impurities. The sputtering method is particularly suitable for a high melting point substance, for example, oxides. Problems have occurred, however, when a thin film is to be formed within a vacuum bell jar, since relatively complicated and expensive apparatus are required. In addition, if a metal oxide is selected as a target, it is usually necessary to regulate the purity of the oxide and if the target is porous, pretreatment is frequently required. Problems frequently occur when a thin film is to be made of multi-component metals or metal oxides and it is necessary to provide various kinds of targets in order to vapor-deposit or sputter the various materials from those targets simultaneously or sequentially with additional cost involved in the apparatus and procedure.
With the advent of inexpensive microcomputer systems capable of analyzing sensor information, for example, in the automotive environment, a need has been created for providing fairly inexpensive sensors. Accordingly, the prior art is still seeking to optimize the preparation of coating substrates with thin metallic films in an economical manner.
SUMMARY OF THE INVENTION
The present invention provides a method of producing a thin film of a mono-component or multi-component noble metal on a substrate in a relatively easy and inexpensive manner. This is accomplished by providing a substrate of an appropriate material, such as silicon or metals, such as Al, Au, Ti, or Ta. A sol solution containing at least a noble metal alkoxide is dissolved in, for example, an organic solvent. This sol solution, which can contain one or more noble metal alkoxides and base metals, depending on the desired application, can then coat the substrate with a predetermined thickness of the sol solution to provide a film layer on the substrate. The coating can be accomplished, for example, by a spraying, an immersing, or even a drip method wherein the substrate is rotated and the sol solution is dripped onto the substrate at a controlled drip rate relative to a controlled rotation rate. The coated substrate is then appropriately dried, for example, to a gelatinized state. The coated substrate can then be heated or baked in one of a reductive atmosphere or an oxidative atmosphere to form a thin film of noble metal.
The sol solution can also be formed by mixing the noble metal alkoxide with acetic acid as a catalyzer in the presence of a nitrogen gas. The noble metals can be selected from a group consisting of Au, Pt, Pd, Rh, Ir, Ru, Os, and Ag. One or a plurality of film layers can be provided on the substrates, either by repeating each of the steps or preparing a sol solution, coating the substrate with that solution, drying the coated substrate, and then baking the substrate to form a first film layer with a subsequent repeating of the steps to provide a second film layer with a different noble metal. Alternatively, the plurality of thin films can be provided by repeating the steps of preparing a sol solution of a different noble metal alkoxide, coating the substrate with one of the sol solutions, drying the coated substrate, and then repeating the coating of the substrate with a second solution. The number of layers of thin film of coated solutions can then be repeated and after the desired number of layers have been deposited, the coated substrate with the multiple layers can then be heated to fix the multiple layers.
For example, in producing an ion concentration measuring electrode, such as a pH sensor, an appropriate substrate is provided and then coated with a sol solution containing isopropoxy iridium and pantaethoxy tantalum. This solution is coated on the substrate to a predetermined thickness to form a film layer. The film layer is then dried and subsequently heated in, for example, an oxidative atmosphere to form a metal oxide film Ta2 O5 with iridium.
BRIEF DESCRIPTION OF THE DRAWINGS
The objects and features of the present invention, which are believed to be novel, are set forth with particularity in the appended claims. The present invention, both as to its organization and manner of operation, together with further objects and advantages, may best be understood by reference to the following description, taken in connection with the accompanying drawings.
FIG. 1 is a schematic flow chart showing the present invention;
FIG. 2 is a schematic drawing showing a spin coating apparatus used in a first preferred embodiment;
FIG. 3A and 3B are enlarged front views showing a substrate in the first preferred embodiment;
FIG. 4 is a perspective view showing thin film-forming means a second preferred embodiment, and
FIG. 5 is an enlarged front view showing a substrate in the second preferred embodiment.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
The following description is provided to enable any person skilled in the art to make and use the invention and sets forth the best modes contemplated by the inventor of carrying out his invention. Various modifications, however, will remain readily apparent to those skilled in the art, since the generic principles of the present invention have been defined herein specifically to provide a method of producing a metallic thin film for sensors.
The following description of a preferred embodiment of a method of producing a metallic thin film according to the present invention is made with reference to the flow chart of FIG. 1.
A noble metal alkoxide mixture comprising noble metal alkoxides A. B . . . X is selected depending upon the particular use, at a desired ratio. The mixture is then dissolved in organic solvents to form a fluidic mixture solution of noble metal alkoxides (sol). This mixture solution is stirred enough to prepare a coating solution with the components homogenized. The resulting thin film is formed on the surface of a substrate made of Si or metals, such as Al, Au, Ti, or Ta. The particular method of forming the thin film on the substrate from the coating solution can be optionally selected.
Subsequently, a thin film made of the coating solution is dried by applying heat to cause the thin film to gelatinize at a thickness of about 1 μ. The dried thin film is then baked in a reductive atmosphere to form a final thin film of a thickness of about 1000 to 2000 Å and made of a plurality of noble metals. To form a thin film made of a plurality of noble metal oxides, it can be baked in an oxidative atmosphere. The pressure of the baking atmosphere can be at sea level.
It is also possible to form a thin film made of one kind of noble metal, or noble metal oxide, by using any one kind of noble metal alkoxide selected from a plurality of noble metal alkoxides A, B.
In addition to the method shown in the flow chart of FIG. 1, the respective solutions of the noble metal alkoxides A, B . . . X may be prepared and then mixed.
Furthermore, it is also possible to form the thin film made of a plurality of metal or metal oxide containing noble metals from the coating solution prepared by mixing at least one of these noble metal alkoxides A, B . . . X with base metal alkoxides suitably selected.
The multi-layer thin film can also be formed by repeating the formation of the thin film made of metals or metal oxides, as described above.
Next, a first preferred embodiment using platinum as the noble metal is described with reference to FIGS. 2 to 3(A) and 3(B).
Referring to FIG. 2, reference numeral 1 designates a spin coating apparatus comprising a turntable 2 revolved by means of a motor (not shown), and a nozzle 3 arranged above the center of the turntable 2 for applying the coating solution drop by drop.
Platinum alkoxides [Pt--(0-R)] (R: --CH3, --C2 H5, --C3 H7) are dissolved in dehydrated ethyl alcohol in a quantity of 2.5% by weight. A quantity equivalent in mol to the alkoxides of acetic acid is added to the resulting solution as a catalyzer to sufficiently stir and mix the solution in a stream of nitrogen to avoid contact with moisture, thereby preparing a first coating solution.
Subsequently, a substrate 4, made of Si, is placed at a central portion of the turntable 2 to revolve the substrate 4 by about 4,000 rpm, together with the turntable 2. The first coating solution 5 is applied on the substrate 4 from the nozzle 3, drop by drop, at a rate of 100 to 200 μ1/ for about 30 seconds, followed by spin-coating the first coating solution on a surface of the substrate 4 to form a thin film 6a of about 1 μ. The thin film 6a is dried for 30 minutes at 100° to 150° C. It is then baked for 30 minutes at 600° C. in a reductive atmosphere to form a Pt thin film 6b on the surface of the substrate 4, as shown in FIG. 3(a) of about 1000 to 2000 Å in thickness.
In addition, a second coating solution containing platinum alkoxides in a concentration of 5% by weight is prepared similarly to the first coating solution 5. The substrate 4, shown in FIG. 4(A) is again placed on the turntable 2 with the Pt thin film 6b on an upper side (not shown) to spin-coat the second coating solution on the Pt thin film 6b in the same manner as the first coating solution 5, thereby forming a thin film 7a, made of the second coating solution on the Pt thin film 6b, as shown in FIG. 3(B). The thin film 6b is dried under the same conditions as the thin film 6a. It is then baked for 30 minutes at 350° C. in the oxidative atmosphere to form a PtO thin film 7b, thereby forming a thin film made of noble metals. The thin film oxidizes in a layer on the substrate 4.
The thin films 6a and 7a, made of the first coating solution and the second coating solution containing platinum alkoxides, respectively, are formed in turn on the substrate 4. They are then baked in turn in a reductive, or oxidative, atmosphere to form a thin film made of noble metals and the thin film made of noble metal oxides in layers. This does not required complicated apparatus, and thus manufacturing expenses can be easily reduced.
The thickness of the thin film 6a and the thin film 7a, respectively, is determined by regulating the respective concentrations of the first coating solution and the second coating solution and a rotation frequency of the turntable 2. The temperature in the reductive atmosphere is set within a range of 600° to 600° C., and that in the oxidative atmosphere is set within a range of 300° to 400° C. Also, Nz, Hz, and the like, can be used as the reductive atmosphere. The rotation frequency of the turntable 2 is set within a range of 3,000 to 5,000 rpm.
Although a thin film made of noble metals and a thin film made of noble metal oxides are formed on the substrate 4 in a multitude of layers in this first preferred embodiment, both thin films can also be formed in a single layer.
When the thin film is formed in a multitude of layers, noble metal alkoxides forming these layers can be different from each other, and various kinds of metal alkoxides with noble metal alkoxides, as the main components or the additives, can be used. Additionally, a part of the plurality of layers of the thin film can be formed by using base metal alkoxides, or semiconductor alkoxides. It is therefore possible to form a multi-layer thin film in various types of combinations, such as metal oxide/noble metal oxide/noble metal, and noble metal/metal oxide/semiconductor, depending on the desired use of the multi-layer thin film.
A second preferred embodiment using a noble metal Ir as the additives to the base metals is described with reference to FIGS. 4 to 5.
In the second preferred embodiment, a suitable quantity of isopropoxy iridium [Ir(OC2 H5)5 ] as the noble metal alkoxides is added to pentaethoxy tantalum [Ta(OC2 H5)5, as a tantalum alkoxide [Ta-(O-R)5 ], to prepare a coating solution in the same manner as in the first preferred embodiment.
Referring to FIG. 4, reference numeral 10 designates a vessel housing the coating solution 11 therein. The substrate 4 is immersed in the coating solution 11 and then withdrawn to form a thin film on the surface of the substrate 4. After it has dried, the thin film is baked in the oxidative atmosphere to form a metal oxide thin film 12, made of Ta2 O5 with Ir added on the substrate 4, as shown in FIG. 5. The electrical resistance value of the metal oxide thin film 12 can be regulated within a range of a high-insulating valves to a low-insulating valves, for example, about 107 to 104 Ω, by varying the molar ratio of isopropoxy iridium added.
The metal oxide thin film 12 can be used, for example, as a pH sensor, but oxides of Ir and other noble metals can be added to exhibit a response to pH, even when influenced by the oxidation and the reduction, so that the added noble metal Ir can improve the response of the thin film 12, when it is used as a pH sensor. For example, when the thin film 12 is formed on a substrate of ISFET, an ion concentration-measuring electrode superior in response can be constructed.
In addition to using metal alkoxides as additives in the second preferred embodiment, noble metal alkoxides may be used as the main components, and base metal alkoxides may be added to noble metal alkoxides. Although the thin film is formed in a single layer on the substrate 4 in the second preferred embodiment, it may also be formed in a plurality of layers, as shown in the first preferred embodiment.
As can be seen from the first and second preferred embodiments, noble metal alkoxides can be optionally selected, depending upon the desired use. If the thin film made of a coating solution containing, for example, palladium alkoxides (Pd--O--R, R:--C3 H7, --C5 H9) in a concentration of 10% by weight , dissolved in a dehydrated ethyl alcohol, is formed to be dried and baked, a porous metallic Pd thin film can be formed on a substrate of a MOSFET. The porous metallic Pd thin film can be used as a hydrogen sensor.
Additionally, if the thin film made of a coating solution containing Pt alkoxide is formed on a substrate of a MOSFET to be baked in the reductive or oxidative atmosphere, a Pt or PtO thin film is formed. This Pt or PtO thin film can be used as a gas sensor by a catalytic action thereof. Methanol, propanol, acetone, trichlene, acetyl acetone and the like may be used as organic solutions in addition to dehydrated ethyl alcohol.
When a coating solution containing a plurality of alkoxides for use in pH glass response film for example, alkoxides of Si, Lt, La, Ti, Ba, is prepared to form a pH-responsive film, and if the thin film made of noble metal alkoxides is used as an oxidative layer, the adhesion of the oxidative layer to the glass-responsive film can be improved, thus preventing any subsequent separation.
According to the above described method, a coating solution containing noble metal alkoxides, or metal alkoxides with noble metal alkoxides, as the main components, or as additives, is used and the resulting thin film is formed on the substrate. The thin film is baked in the reductive or oxidative atmosphere to form the metallic or metal oxide thin film.
Thus, it is possible to produce a component thin film in a highly efficient and inexpensive manner. When a multi-component thin film is formed, it is sufficient that the coating solution containing the respective noble metal alkoxides, or noble metal alkoxides and base metal alkoxides in mixture is prepared to form the thin film. It is therefore unnecessary to use complicated and large-scaled apparatus for forming the multi-component thin film, and thus it is possible to easily and inexpensively produce the multi-component thin film. Since the coating solution contains noble metal alkoxides, or noble metal alkoxides and metal alkoxides in mixture, the crystalline and amorphous structure of the respective ingredients, or the compactness of the porous thin film can be easily controlled. Thus, it is possible to produce a thin film having a structure in accordance with the desired use.
Additionally, a metallic thin film, or a metal oxide thin film, which is formed from the solution of optional metal alkoxides in the same manner as the above-described metallic or metal oxide thin film, can be stacked in layers. It is therefore possible to produce the thin film, having a structure corresponding to various ways of using it, by, for example, selecting the components of the thin film and determining the number of layers in the thin file.
Those skilled in the art will appreciate that various adaptations and modifications of the just-described preferred embodiment can be configured without departing from the scope and spirit of the invention. Therefore, it is to be understood that, within the scope of the appended claims, the invention may be practiced other than as specifically described herein.

Claims (16)

What is claimed is:
1. In a method for forming sensors, the improvement comprising:
providing a substrate;
preparing a sol solution containing at least a noble metal alkoxide dissolved in a solvent;
coating the substrate with a the sol solution to provide a film layer on the substrate;
drying the film layer to a gelatinized state, and
heating the film layer in one of a reductive atmosphere and an oxidative atmosphere to form a thin film made of the noble metal.
2. The invention of claim 1 wherein the solvent is dehydrated ethyl alcohol.
3. The invention of claim 2 wherein the sol solution is formed by mixing the noble metal alkoxide with acetic acid in the presence of nitrogen gas.
4. The invention of claim 3 wherein the substrate is coated by rotating it and dripping the sol solution on the rotating substrate.
5. The invention of claim 3 wherein the substrate is coated by being spraying with the sol solution.
6. The invention of claim 3 wherein the substrate is coated by dipping it into the sol solution.
7. The invention of claim 1 wherein the noble metal is platinum.
8. The invention of claim 1 wherein a plurality of different noble metal alkoxides are prepared into a sol solution with the noble metals selected from the group consisting of Au, Pt, Pd, Rh, Ir, Ru, Os, and Ag.
9. The invention of claim 8 wherein a plurality of film layers are provided by repeating the steps of preparing a sol solution, coating the substrate, drying the coated substrate with different sol solutions of noble metal alkoxides before the final heating step.
10. The invention of claim 8 wherein a plurality of film layers are provided by repeating the steps of preparing a sol solution of a different noble metal alkoxide, coating the substrate, dripping the coated substrate and heating the coated substrate after a first film layer is formed.
11. A method of producing an ion-concentration measuring electrode comprising:
providing a substrate;
preparing a sol solution containing isopropoxy iridium and pentaethoxy tantalum;
coating the substrate with the sol solution to provide a film layer on the substrate;
drying the film layer, and
heating the film layer in an oxidative atmosphere to form a metal oxide film Ta2 O5 with Ir.
12. In a method for producing a metallic film, the improvement comprising:
providing a substrate;
preparing a sol solution containing at least a noble metal alkoxide dissolved in a solvent;
coating the substrate with the sol solution to provide a film layer on the substrate;
drying the film layer to a gelatinized state, and
heating the film layer in one of a reductive atmosphere and an oxidative atmosphere within an approximate temperature range of 300° to 600° C. to form a film made of the noble metal.
13. The invention of claim 12 wherein the noble metal is platinum.
14. The invention of claim 13 wherein the solvent is dehydrated ethyl alcohol and the platinum alkoxide is 2.5% to 5% by weight.
15. The invention of claim 12 wherein the reductive atmosphere is formed of one of N2 and H2.
16. The invention of claim 12 wherein the sol solution further contains a metal.
US07/883,666 1991-05-18 1992-05-15 Method of producing metallic thin film sensors Expired - Fee Related US5256443A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3142460A JP2999854B2 (en) 1991-05-18 1991-05-18 Method for producing metal thin film for hydrogen sensor, gas sensor or pH response
JP3-142460 1991-05-18

Publications (1)

Publication Number Publication Date
US5256443A true US5256443A (en) 1993-10-26

Family

ID=15315835

Family Applications (1)

Application Number Title Priority Date Filing Date
US07/883,666 Expired - Fee Related US5256443A (en) 1991-05-18 1992-05-15 Method of producing metallic thin film sensors

Country Status (4)

Country Link
US (1) US5256443A (en)
EP (1) EP0513821B1 (en)
JP (1) JP2999854B2 (en)
DE (1) DE69229762T2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5494700A (en) * 1994-04-05 1996-02-27 The Curators Of The University Of Missouri Method of coating a substrate with a metal oxide film from an aqueous solution comprising a metal cation and a polymerizable organic solvent
US5500243A (en) * 1993-09-21 1996-03-19 Eastman Kodak Company Process for planarizing substrate surfaces for magnetic thin film heads
US5707715A (en) * 1996-08-29 1998-01-13 L. Pierre deRochemont Metal ceramic composites with improved interfacial properties and methods to make such composites
US5728626A (en) * 1993-07-26 1998-03-17 At&T Global Information Solutions Company Spin-on conductor process for integrated circuits
US6086957A (en) * 1999-05-28 2000-07-11 Sandia Corporation Method of producing solution-derived metal oxide thin films
US6143432A (en) * 1998-01-09 2000-11-07 L. Pierre deRochemont Ceramic composites with improved interfacial properties and methods to make such composites
US6280865B1 (en) 1999-09-24 2001-08-28 Plug Power Inc. Fuel cell system with hydrogen purification subsystem
US6323549B1 (en) 1996-08-29 2001-11-27 L. Pierre deRochemont Ceramic composite wiring structures for semiconductor devices and method of manufacture
US6455181B1 (en) 2000-03-31 2002-09-24 Plug Power, Inc. Fuel cell system with sensor
US20060189132A1 (en) * 2003-04-16 2006-08-24 Bridgestone Corporation Method for forming porous thin film
US20060198082A1 (en) * 2005-01-19 2006-09-07 Greatbatch, Inc. Sputtered Ruthenium Oxide Coatings In Electrolytic Capacitor
US20150050430A1 (en) * 2013-08-16 2015-02-19 Sensirion Ag Annealing process for integrated gas sensors

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001029283A1 (en) * 1999-10-19 2001-04-26 Ebara Corporation Plating method, wiring forming method and devices therefor
JP4617599B2 (en) 2000-08-07 2011-01-26 株式会社デンソー Gas sensor element and manufacturing method thereof
JP4110961B2 (en) * 2002-12-24 2008-07-02 株式会社デンソー Method for producing gas sensitive membrane for gas sensor
JP6054749B2 (en) * 2011-01-07 2016-12-27 国立大学法人三重大学 Ion selective electrode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4554176A (en) * 1983-01-31 1985-11-19 Permelec Electrode Ltd. Durable electrode for electrolysis and process for production thereof
US4874462A (en) * 1987-12-09 1989-10-17 Central Glass Company, Limited Method of forming patterned film on substrate surface by using metal alkoxide sol

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6335780A (en) * 1986-07-30 1988-02-16 Furukawa Electric Co Ltd:The Noble metal plating method
WO1988009395A1 (en) * 1987-05-20 1988-12-01 Matsushita Electric Industrial Co., Ltd. Process for preparing thin film of base metal and application of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4554176A (en) * 1983-01-31 1985-11-19 Permelec Electrode Ltd. Durable electrode for electrolysis and process for production thereof
US4874462A (en) * 1987-12-09 1989-10-17 Central Glass Company, Limited Method of forming patterned film on substrate surface by using metal alkoxide sol

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
D. W. Johnson, Jr., "Sol-gel Processing of Ceramics and Glass," Ceramic Bulletin 64[12](1985) pp. 1597-1602.
D. W. Johnson, Jr., Sol gel Processing of Ceramics and Glass, Ceramic Bulletin 64 12 (1985) pp. 1597 1602. *
J. S. Reed, "Introduction to the Principles of Ceramic Processing," John Wiley & Sons Inc. 1988 pp. 403-405.
J. S. Reed, Introduction to the Principles of Ceramic Processing, John Wiley & Sons Inc. 1988 pp. 403 405. *
S. Sakko et al., Journal of Materials Science Letters 2 (1983) pp. 395 396. *
S. Sakko et al., Journal of Materials Science Letters 2 (1983) pp. 395-396.

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5728626A (en) * 1993-07-26 1998-03-17 At&T Global Information Solutions Company Spin-on conductor process for integrated circuits
US5500243A (en) * 1993-09-21 1996-03-19 Eastman Kodak Company Process for planarizing substrate surfaces for magnetic thin film heads
US5494700A (en) * 1994-04-05 1996-02-27 The Curators Of The University Of Missouri Method of coating a substrate with a metal oxide film from an aqueous solution comprising a metal cation and a polymerizable organic solvent
US20060200958A1 (en) * 1996-08-29 2006-09-14 L. Pierre Derochemont D/B/A C2 Technologies Method of manufacture of ceramic composite wiring structures for semiconductor devices
US5707715A (en) * 1996-08-29 1998-01-13 L. Pierre deRochemont Metal ceramic composites with improved interfacial properties and methods to make such composites
US6323549B1 (en) 1996-08-29 2001-11-27 L. Pierre deRochemont Ceramic composite wiring structures for semiconductor devices and method of manufacture
US20040194305A1 (en) * 1996-08-29 2004-10-07 L. Pierre Derochemont D/B/A C2 Technologies Method of manufacture of ceramic composite wiring structures for semiconductor devices
US7047637B2 (en) 1996-08-29 2006-05-23 Derochemont L Pierre Method of manufacture of ceramic composite wiring structures for semiconductor devices
US6143432A (en) * 1998-01-09 2000-11-07 L. Pierre deRochemont Ceramic composites with improved interfacial properties and methods to make such composites
US6086957A (en) * 1999-05-28 2000-07-11 Sandia Corporation Method of producing solution-derived metal oxide thin films
US6280865B1 (en) 1999-09-24 2001-08-28 Plug Power Inc. Fuel cell system with hydrogen purification subsystem
US6455181B1 (en) 2000-03-31 2002-09-24 Plug Power, Inc. Fuel cell system with sensor
US20060189132A1 (en) * 2003-04-16 2006-08-24 Bridgestone Corporation Method for forming porous thin film
US20060198082A1 (en) * 2005-01-19 2006-09-07 Greatbatch, Inc. Sputtered Ruthenium Oxide Coatings In Electrolytic Capacitor
US7410509B2 (en) 2005-01-19 2008-08-12 Greatbatch Ltd. Sputtered ruthenium oxide coatings in electrolytic capacitor
US20150050430A1 (en) * 2013-08-16 2015-02-19 Sensirion Ag Annealing process for integrated gas sensors

Also Published As

Publication number Publication date
EP0513821B1 (en) 1999-08-11
EP0513821A3 (en) 1994-03-16
DE69229762D1 (en) 1999-09-16
DE69229762T2 (en) 2000-03-02
JP2999854B2 (en) 2000-01-17
JPH04341572A (en) 1992-11-27
EP0513821A2 (en) 1992-11-19

Similar Documents

Publication Publication Date Title
US5256443A (en) Method of producing metallic thin film sensors
US5358889A (en) Formation of ruthenium oxide for integrated circuits
US6503561B1 (en) Liquid precursor mixtures for deposition of multicomponent metal containing materials
JPH0365643A (en) Capacitance humidity sensor
GB2220074A (en) Humidity sensor
JP2002252286A (en) Semiconductor capacitor with tantalum oxide film and its fabrication method
WO2006079757A1 (en) Method of preparing stable oxide ceramic precursor sol-gel solutions based on lead, titanium, zirconium and lanthanide(s) and method of preparing said ceramic
US6171710B1 (en) Surface treating agent for plating and base material with the plating adhered thereto
GB2262107A (en) Heat decomposing solution containing polyvalent alcohol and organic acid; thermistor films
JPH04256849A (en) Manufacture of capacity type moisture sensor
JP3045896B2 (en) Ozone sensor manufacturing method
JPH03190201A (en) Resistance material and temperature dependent resistance layer in sensor for measuring temperature manufactured from these material
JP2529136B2 (en) Moisture-sensitive element and manufacturing method thereof
JP3577544B2 (en) Gas sensor and metal oxide thin layer surface state control method.
JPS639327B2 (en)
US5976625A (en) Process for forming patterned dielectric oxide films
Gasser et al. Instability of Amorphous Ru‐Si‐O Thin Films under Thermal Oxidation
JPH01286402A (en) Resistor and its manufacture
JPH02114166A (en) Moisture sensor
WO2015146729A1 (en) METHOD FOR FORMING LaNiO3 THIN FILM
EP0493684B1 (en) Method of producing pH-responsive membrane
JPH09293629A (en) Thin film capacitor
KR100480587B1 (en) Lanthanum Strontium Cobalt Oxide Formation Method
JPS61133602A (en) Thermistor
JP3183309B2 (en) Method of forming manganese cobalt copper oxide thin film

Legal Events

Date Code Title Description
AS Assignment

Owner name: HORIBA, LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:TOMITA, KATSUHIKO;REEL/FRAME:006199/0359

Effective date: 19920608

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20011026