US5212702A - Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output - Google Patents
Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output Download PDFInfo
- Publication number
- US5212702A US5212702A US07/857,352 US85735292A US5212702A US 5212702 A US5212702 A US 5212702A US 85735292 A US85735292 A US 85735292A US 5212702 A US5212702 A US 5212702A
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- United States
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- 239000010931 gold Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
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- 239000000463 material Substances 0.000 description 3
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- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
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- 239000003353 gold alloy Substances 0.000 description 1
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- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/913—Diverse treatments performed in unitary chamber
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (5)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/857,352 US5212702A (en) | 1992-03-25 | 1992-03-25 | Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output |
US08/016,399 US5316968A (en) | 1992-03-25 | 1993-02-11 | Method of making semiconductor surface emitting laser |
EP93302071A EP0562768A1 (en) | 1992-03-25 | 1993-03-18 | Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output |
JP8384293A JP2994525B2 (en) | 1992-03-25 | 1993-03-19 | Surface emitting laser device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/857,352 US5212702A (en) | 1992-03-25 | 1992-03-25 | Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/016,399 Division US5316968A (en) | 1992-03-25 | 1993-02-11 | Method of making semiconductor surface emitting laser |
Publications (1)
Publication Number | Publication Date |
---|---|
US5212702A true US5212702A (en) | 1993-05-18 |
Family
ID=25325802
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/857,352 Expired - Lifetime US5212702A (en) | 1992-03-25 | 1992-03-25 | Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output |
US08/016,399 Expired - Lifetime US5316968A (en) | 1992-03-25 | 1993-02-11 | Method of making semiconductor surface emitting laser |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/016,399 Expired - Lifetime US5316968A (en) | 1992-03-25 | 1993-02-11 | Method of making semiconductor surface emitting laser |
Country Status (3)
Country | Link |
---|---|
US (2) | US5212702A (en) |
EP (1) | EP0562768A1 (en) |
JP (1) | JP2994525B2 (en) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4422660A1 (en) * | 1993-06-30 | 1995-02-09 | Mitsubishi Chem Ind | Light emitting device |
EP0653823A2 (en) * | 1993-11-15 | 1995-05-17 | Motorola, Inc. | A semiconductor device with high heat conductivity |
US5491710A (en) * | 1994-05-05 | 1996-02-13 | Cornell Research Foundation, Inc. | Strain-compensated multiple quantum well laser structures |
US5559053A (en) * | 1994-04-14 | 1996-09-24 | Lucent Technologies Inc. | Vertical cavity semiconductor laser |
US5617436A (en) * | 1995-06-07 | 1997-04-01 | Cornell Research Foundation, Inc. | Strain-compensated multiple quantum well laser structures |
EP0820131A1 (en) * | 1996-07-17 | 1998-01-21 | Motorola, Inc. | Passivated vertical cavity surface emitting laser |
US6222871B1 (en) | 1998-03-30 | 2001-04-24 | Bandwidth9 | Vertical optical cavities produced with selective area epitaxy |
US6226425B1 (en) | 1999-02-24 | 2001-05-01 | Bandwidth9 | Flexible optical multiplexer |
US6233263B1 (en) | 1999-06-04 | 2001-05-15 | Bandwidth9 | Monitoring and control assembly for wavelength stabilized optical system |
US6275513B1 (en) | 1999-06-04 | 2001-08-14 | Bandwidth 9 | Hermetically sealed semiconductor laser device |
US6366597B1 (en) | 1998-04-14 | 2002-04-02 | Bandwidth9 Inc. | Lattice-relaxed vertical optical cavities |
US6487230B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6487231B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6493371B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth9, Inc. | Vertical cavity apparatus with tunnel junction |
US6493373B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6493372B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US20020197756A1 (en) * | 1999-09-13 | 2002-12-26 | Toshikazu Mukaihara | Surface-emitting semiconductor laser device and method for fabricating the same, and surface-emitting semiconductor laser array employing the laser device |
US6535541B1 (en) | 1998-04-14 | 2003-03-18 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6760357B1 (en) | 1998-04-14 | 2004-07-06 | Bandwidth9 | Vertical cavity apparatus with tunnel junction |
KR100560079B1 (en) * | 2004-05-27 | 2006-03-13 | 주식회사 옵토웰 | Vertical-cavity surface-emitting laser diode |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5661075A (en) * | 1995-02-06 | 1997-08-26 | Motorola | Method of making a VCSEL with passivation |
US5654228A (en) * | 1995-03-17 | 1997-08-05 | Motorola | VCSEL having a self-aligned heat sink and method of making |
WO1997018581A1 (en) * | 1995-11-13 | 1997-05-22 | Board Of Regents, The University Of Texas System | Low threshold microcavity light emitter |
US5764674A (en) * | 1996-06-28 | 1998-06-09 | Honeywell Inc. | Current confinement for a vertical cavity surface emitting laser |
US6370179B1 (en) | 1996-11-12 | 2002-04-09 | Board Of Regents, The University Of Texas System | Low threshold microcavity light emitter |
KR100243655B1 (en) * | 1996-12-20 | 2000-02-01 | 정선종 | A surface-emitting laser with 3-dimensional cavity and a method of fabricating the same |
US6064683A (en) * | 1997-12-12 | 2000-05-16 | Honeywell Inc. | Bandgap isolated light emitter |
US6603784B1 (en) | 1998-12-21 | 2003-08-05 | Honeywell International Inc. | Mechanical stabilization of lattice mismatched quantum wells |
JP4123828B2 (en) | 2002-05-27 | 2008-07-23 | 豊田合成株式会社 | Semiconductor light emitting device |
JP2006093682A (en) * | 2004-08-26 | 2006-04-06 | Mitsubishi Electric Corp | Semiconductor laser and method of manufacturing the same |
US7860137B2 (en) * | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
WO2006039341A2 (en) * | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0321090A (en) * | 1989-06-16 | 1991-01-29 | Res Dev Corp Of Japan | Plane light emitting type semiconductor laser |
JPH0321091A (en) * | 1989-06-16 | 1991-01-29 | Res Dev Corp Of Japan | Light emitting type semiconductor laser plane |
US5018159A (en) * | 1988-11-25 | 1991-05-21 | Director-General, Agency Of Industrial Science And Technology | Divided electrode type semiconductor laser device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54162986A (en) * | 1978-06-14 | 1979-12-25 | Sharp Corp | Fitting structure of semiconductor laser unit |
JPS58147188A (en) * | 1982-02-26 | 1983-09-01 | Fujitsu Ltd | Semiconductor laser device |
JPS63188983A (en) * | 1987-01-31 | 1988-08-04 | Ricoh Co Ltd | Semiconductor light emitting device |
JPS6418691A (en) * | 1987-07-13 | 1989-01-23 | Shinji Murasawa | Atlas |
JPH01316985A (en) * | 1988-06-15 | 1989-12-21 | Nec Corp | Generation of semiconductor laser |
JPH026368A (en) * | 1988-06-24 | 1990-01-10 | Kawasaki Refract Co Ltd | Alumina-zirconia-carbon-based refractory |
US5076205A (en) * | 1989-01-06 | 1991-12-31 | General Signal Corporation | Modular vapor processor system |
US4999842A (en) * | 1989-03-01 | 1991-03-12 | At&T Bell Laboratories | Quantum well vertical cavity laser |
JPH0442589A (en) * | 1990-06-08 | 1992-02-13 | Fuji Electric Co Ltd | Surface emission semiconductor laser element |
US5136603A (en) * | 1991-04-29 | 1992-08-04 | At&T Bell Laboratories | Self-monitoring semiconductor laser device |
-
1992
- 1992-03-25 US US07/857,352 patent/US5212702A/en not_active Expired - Lifetime
-
1993
- 1993-02-11 US US08/016,399 patent/US5316968A/en not_active Expired - Lifetime
- 1993-03-18 EP EP93302071A patent/EP0562768A1/en not_active Withdrawn
- 1993-03-19 JP JP8384293A patent/JP2994525B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5018159A (en) * | 1988-11-25 | 1991-05-21 | Director-General, Agency Of Industrial Science And Technology | Divided electrode type semiconductor laser device |
JPH0321090A (en) * | 1989-06-16 | 1991-01-29 | Res Dev Corp Of Japan | Plane light emitting type semiconductor laser |
JPH0321091A (en) * | 1989-06-16 | 1991-01-29 | Res Dev Corp Of Japan | Light emitting type semiconductor laser plane |
Non-Patent Citations (36)
Title |
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A. Ibaraki, et al., "Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW Conditions," Jpn. J. Appl. Phys. vol. 28, L. 667-L 668 (1989). |
A. Ibaraki, et al., "GaAs Buried Heterostructure Vertical Cavity Top-Surface Emitting Lasers," IEEE J. Quan. Electron, vol. 27, p. 1386 (1991). |
A. Ibaraki, et al., Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW Conditions, Jpn. J. Appl. Phys. vol. 28, L. 667 L 668 (1989). * |
A. Ibaraki, et al., GaAs Buried Heterostructure Vertical Cavity Top Surface Emitting Lasers, IEEE J. Quan. Electron, vol. 27, p. 1386 (1991). * |
F. Koyama, et al., "Room Temperature Continuous Wave Lasing Characteristics of a GaAs Vertical Cavity Surface-Emitting Laser," Appl. Phys. Lett. vol. 55, pp. 221-222, (1989). |
F. Koyama, et al., Room Temperature Continuous Wave Lasing Characteristics of a GaAs Vertical Cavity Surface Emitting Laser, Appl. Phys. Lett. vol. 55, pp. 221 222, (1989). * |
H. Yoo, et al., "Fabrication of a Two-Dimensional Phased Array of Vertical-Cavity Surface-Emitting Lasers," Appl. Phys. Lett., vol. 59, pp. 1198-1200, (1990). |
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Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4422660A1 (en) * | 1993-06-30 | 1995-02-09 | Mitsubishi Chem Ind | Light emitting device |
EP0653823A2 (en) * | 1993-11-15 | 1995-05-17 | Motorola, Inc. | A semiconductor device with high heat conductivity |
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Also Published As
Publication number | Publication date |
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US5316968A (en) | 1994-05-31 |
JP2994525B2 (en) | 1999-12-27 |
JPH0613711A (en) | 1994-01-21 |
EP0562768A1 (en) | 1993-09-29 |
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