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Publication numberUS5169408 A
Publication typeGrant
Application numberUS 07/470,871
Publication date8 Dec 1992
Filing date26 Jan 1990
Priority date26 Jan 1990
Fee statusPaid
Publication number07470871, 470871, US 5169408 A, US 5169408A, US-A-5169408, US5169408 A, US5169408A
InventorsRex L. Biggerstaff, Mark L. Jenson, James G. Kegley, Charles W. Skinner, Daniel J. Syverson
Original AssigneeFsi International, Inc.
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Apparatus for wafer processing with in situ rinse
US 5169408 A
Abstract
A wafer processing apparatus including a head defining an etching chamber, the sidewall of the head being slidable along the base so that the sidewall and base will normally define an etch chamber; and the sidewall may be moved upwardly to open a discharge passage for rinsing water, and a deflecting surface for deflecting the rinsing water downwardly and draining the rinsing water from the passage. The housing is separable above the deflector ring to provide access to the wafer for inserting the wafer and replacing it.
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Claims(14)
We claim:
1. Apparatus for etching and rinsing a single semiconductor wafer, comprising
head means defining an etching chamber capable of being opened and closed to permit a wafer to be loaded into and removed from the chamber,
support means mounting a wafer in the chamber, said support means being capable of rotating the wafer,
means flowing and interrupting flow of etchant gas and other gas through the chamber and across at least a portion of the wafer,
a source of rinsing liquid comprising a duct into the etching chamber to direct the rinsing liquid onto and across the wafer,
and means collecting the rinsing liquid from the chamber.
2. Apparatus according the claim 1 wherein the head means comprises
base means and wall means defining the etching chamber, the wall means having a peripheral rinsing liquid receiving passage opposite the support means for collecting the rinsing liquid slung from the rotating wafer.
3. Apparatus according o claim 1 wherein the head means comprises a peripheral wall with open passage means opposite the support means and extending around at least a portion of the wall to receive rinsing liquid slung from the rotating wafer, and means restricting flow of gases from the chamber and through the passage.
4. Apparatus according to claim 1 wherein the head means comprises a peripheral wall with open passage means opposite the support means and extending around at least a portion of the wall to receive rinsing liquid slung from the rotating wafer, and means closing said passage with respect to the etching chamber.
5. Apparatus according to claim 1 wherein the head means comprises a peripheral wall with open passage means around at least a portion of the wall adjacent the support means to receive rinsing liquid slung from the rotating wafer, the support means and peripheral wall being relatively movable with respect to each other whereby the wafer may be alternately located opposite the open passage and away from the passage.
6. Apparatus according to claim 2 wherein the base means and wall means are relatively movable with respect to each other whereby the base means alternately closes and opens flow communication between the chamber and the passage.
7. Apparatus according to claim 2 wherein said wall means further comprises a peripheral deflector surface obliquely oriented adjacent the support means and wafer to deflect rinsing liquid away from the wafer.
8. Apparatus according to claim 5 and the peripheral wall comprises upper and lower portions separable from each other to define an access port into the chamber for accessing the wafer.
9. Apparatus according to claim 8 and the support means and peripheral wall being relatively movable to position the wafer at various locations along the wall whereby the wafer may be alternately located opposite the open passage and opposite the access port.
10. Apparatus for etching and rinsing a semiconductor wafer comprising
a housing comprising a closed etching chamber and a peripheral sidewall enclosing the chamber,
rotatable support means in the etching chamber suitable for mounting and rotating such a wafer,
means flowing and interrupting flow of etchant gas and other gas through the chamber and across at least a portion of the wafer,
means directing rinsing liquid into the etching chamber and onto and across the wafer on the support means, and
the peripheral sidewall comprising open passage means around at least a portion of the sidewall and opposite the rotatable support means and wafer to receive rinsing liquid slung from the rotating wafer.
11. Apparatus according to claim 10 wherein the housing also comprises a base portion relatively slidable along the peripheral sidewall to open and close the open passage means.
12. Apparatus according to claim 10 wherein the peripheral sidewall also comprises a deflector surface portion in said open passage means, the deflector surface portion being oriented obliquely to the peripheral sidewall to obliquely deflect liquid particles slung from the rotating wafer.
13. Apparatus according to claim 11 wherein said rotatable support means is on the base portion, the wafer and support means having an alternate position relative to the peripheral sidewall when relative movement between the base and sidewall closes the passage means, and the peripheral sidewall also comprising a gas outlet manifold portion extending around at least a portion of the sidewall and located opposite said alternate position of the support means to receive the gases after the gases have flowed across the portions of the wafer.
14. Apparatus according to claim 13 wherein the housing sidewall comprises an upper portion separable from adjacent portions of the sidewall at a joint adjacent the manifold portion, the sidewall defining an access opening at said joint when the upper portion is separated from the adjacent portions of the sidewall to facilitate moving a wafer into and out of the etching chamber.
Description
DETAILED SPECIFICATION

One form of the invention is illustrated in the drawings and is described herein.

The processing apparatus is indicated in general by numeral 10 and includesa head means 11 defining an etching chamber 12, a support means 13 to carrya wafer W being processed; a means 14 for flowing etchant gases into and through the etching chamber; a source 15 of rinsing liquid to be controllably flowed into the etching chamber 12 and across portions of thewafer W after the etching is completed; and also a means 16 for collecting the rinsing liquid which has been flowed over the wafer to carry away any contaminants that may be present.

More specifically, the head means 10 is defined by a housing 17 carried on a support plate 18 on which a superstructure or frame 19 in also affixed. The housing 17 includes a base 20 affixed to the baseplate 18 which has a substantially cylindrical periphery or cylindrical outer wall surface 21. The base 20 has a central opening 22 which receives a drive shaft which isa portion of the support means for the wafer W. The drive shaft has a wafersupport or vacuum chuck 24 affixed on its upper end and in the lower portion of the etch chamber 12. The shaft 23 is supported in and driven bya variable speed motor 25 so that the wafer W may be rotated at a wide variety of speeds during the processing of the wafer. For instance, the wafer will be rotated at a low speed of approximately 20 rpm during etching of the wafer; will be rotated at a speed of approximately 500 to 1,500 rpm after the etching is completed and during the rinsing of the wafer; and finally the wafer will be rotated at speeds in the range of 3,000 to 5,000 rpm as the rinsing is completed and while the wafer is being subsequently dried as hereinafter more fully described.

A sealing device 26 receives the drive shaft 23 so as to very tightly seal the exterior of the drive shaft so as to completely isolate the etch chamber 12 and the opening 22 through which the shaft extends, from the ambient at the exterior of the processing apparatus 10.

The drive shaft 23 is hollow to provide a duct or passageway 27 which communicates with the duct or passageway 28 extending through the vacuum chuck 13. The lower or outer end of drive shaft 23 is connected through a rotary union 29 to a supply tube or duct 30. The tube 30 is connected through a valve 31 to alternate sources of vacuum and nitrogen which are connected to the valve by tubes or ducts 32 and 33, respectively. Accordingly, nitrogen may be supplied into the passageway 28 through the wafer support 13; or alternately a vacuum may be drawn on the passageway 28.

The wafer support 13 has a flat round disc 34 on which the wafer W lies during processing of the wafer. The wafer support 13 incorporates a unidirectional check valve 35 so as to close the upper end of passageway 28 when nitrogen gas is supplied under pressure into the passageway 28, atwhich time the valve element or ball 36 is raised by the flow of nitrogen gas upwardly against a valve seat formed by an O-ring 37 in the passage. Normally, the flow passage 38 through the check valve is open and unobstructed because the valve element 36 is away from the valve seat 37, and the valve element rests upon support surfaces 39 adjacent bypass grooves 40 which allow a vacuum to be drawn through the passages 38 on thewafer W when the vacuum is applied in the passageway 28, thereby holding the wafer stationary on the support 13.

Normally, while etchant gases, including gaseous hydrogen fluoride, water vapor and a diluent such as nitrogen, are in the etch chamber 12, nitrogenwill be flowed upwardly through the shaft 27 and passageway 28 and through the check valve 35 at a slow rate of speed so that there is no possibilityof the etchant gas flowing downwardly through the passageway 28 and into the source of vacuum. Later during rinsing and high-speed spinning of the wafer, the vacuum is drawn in the passageway 28 and 38 to tightly secure the wafer on the support or wafer chuck 13 to prevent any damage to the wafer during the high-speed rotating.

The opening 22 in the base 20 is supplied with an inert gas such as nitrogen through passages 41 which are connected to a source of nitrogen supplied by the tube 42.

As a part of the head means 11, the housing 17 includes a sidewall 43 whichis defined in several segments or portions 44, 45 and 46.

The upper portion 44 of the sidewall is formed integrally with the top wall47 of the housing and cooperates with the top surface 48 of the base 20 in defining the etching chamber 12 when the housing is entirely closed as illustrated in FIG. 1. The sidewall 44 provides a port 49 through which the etchant gas is supplied into the etch chamber 12. The port 49 is connected by a fitting 50 and supply tube 51 to valving and flow controllers 52, 53 and 54 which are connected with sources of anhydrous hydrogen fluoride gas or other anhydrous hydrogen halide gas, a source of nitrogen or other inert gas, and a source of water vapor which provides the necessary components for the etchant gas for etching the oxides of thewafer W.

The top wall 47 is affixed as by mechanical fasteners to a mounting plate 55 which is fastened to the vertically extendable and rectractable piston rod 56 of a pneumatic cylinder 57 which is secured to the frame 19. The pneumatic cylinder is suitably connected to sources of air under pressure with the capability of raising and lowering the upper portion of the housing 17, including the sidwall 44 and top wall 47.

The sidewall 44 also mounts a diffuser panel 58 which entirely traverses the etch chamber 12 and confronts the wafer W below the level of port 49 for passing the etchant gas therethrough and evenly distributing the gas over the entire surface area of the wafer W. The diffuser 58 may in one form be a plastic membrane with pores in the range of 20 to 50 microns in size, uniformly dispersed across the membrane for passing the etchant gas therethrough. The membrane may be formed of various materials such as polyethylene, or in some cases, polyvinylidene difluoride, also known as PVDF. Alternately, the membrane may be made of polytetrafluoroethylene, also known PTFE and by its trademark Teflon, owned by DuPont. Of course, other forms of diffusers may be used to uniformly spread the etchant gas across the face of the wafer W.

The wall portion 44 has a groove 59 formed therein, beneath the level of the diffuser 58 and extending around the entire periphery of wall 44. The groove 59 serves as a manifold to collect all of the spent etchant gases and discharge the spent etchant gases through a port 60 which is connectedto a fitting 61 and discharge tube 62 through which the etchant gases are flowed after they have been passed over the face of the wafer W. The entire periphery of groove 59 is covered by a membrane 63, of material similar to that in the diffuser 58 so that the spent etchant gases will flow outwardly to all peripheral portions of the groove 59, thereby contributing to the uniformity of flow of the etchant gases over the face of the wafer W.

The lower face 64 of the wall portion 44 confronts and seals against the top face 65 of the intermediate wall portion 45 which is also referred to as a deflector ring. The wall portions 44 and 45 are separable, as hereinafter more fully explained, to provide an access port for inserting and subsequently replacing the wafer W prior to and after the end of the etch-rinse processing accomplished by the apparatus 10. In FIG. 1, the upwardly shifted position of the side and top wall portions 44, 47 and of the mounting plate 55 is illustrated in dotted lines; and the upwardly shifted position of the bottom face 64 of the wall portion 44 is illustrated by the dotted line 64'. The space between the dotted line 64' and the face 65 of the deflector ring 45 defines the access opening through which wafers may be inserted and replaced.

The deflector ring 45 has an inner peripheral cylindrical surface 66 which is aligned with and is slidable onto the outer cylindrical surface 21 of the base 20. A peripheral ledge 67 or deflector 45, adjacent the inner periphery of deflector ring 45 normally confronts the rib 68 which is rigid with the base 20 and is sealed thereto by an O-ring seal to prevent the passage of any fluids, either in gaseous or liquid form, when the housing is entirely closed as illustrated in FIG. 1.

Deflector ring 45 also has a downwardly facing and peripheral oblique conical surface 69 which normally cooperates with the lower portion 46 of the sidewall 43 to define the means for collecting spent rinsing liquid indicated in general at numeral 16 and more specifically, in defining the peripheral passage 70 which collects the spent rinsing water as hereinafter more fully described.

The deflector ring 45 also has a rinsing water supply port 71 therethrough and oriented to direct a stream of rinsing liquid or deionized water onto the face of wafer W at the end of the etch cycle. The rinse water port 71 is connected by a tube 72 and a valve 73 to a source of deionized water attube 74. Valve 73 alternately connects the port 71 and tube 72 to a source of vacuum provided by the duct 75 so as to evacuate the port 71 and tube 72 and remove all of the moisture therefrom at the end of a rinsing and drying cycle and prior to the beginning of another etch cycle.

Wall portion 46, which may be otherwise known as a collecting cup, is affixed at its upper edge portion 76 to the deflector ring 45; and the cup46 also defines a peripheral groove 77 around its entire circumference as aportion of the collecting passage 70 for receiving rinsing water spilled off the periphery of the wafer W and deflected from the deflector surface 69. A drain port 78 is provided in the cup 46 and is connected by a fitting to a drain tube 79 which extends downwardly from the cup 46 and through a notch 80 formed in the baseplate 18.

A pair of pneumatic cylinders 81 and 82 are mounted on the baseplate 18 andhave their piston rods 83 extending through suitable access ports in the baseplate 18 and affixed to the cup 46 by fittings 84. The cup 46 also hasa cylindrical inner peripheral surface 85 to receive and slide along the outer cylindrical surface 21 of the base 20. The cylinders 81 and 82 are suitably connected to sources of air for extending and retracting the piston rods, to raise and lower the cup ring 46.

The processing apparatus is also to be used with suitable robotic water handling devices for inserting and removing the wafer W into and from the chamber 12. A positioning arm or fork 86 operated by a rodless cylinder 87is also attached to the baseplate 18 and arranged to accurately position the wafer W on the wafer support or chuck 24 in order to accommodate high-speed spinning of the wafer without any likelihood of damaging the wafer.

OPERATION

Assuming that a wafer W has been placed on the support or wafer chuck 24, the processing apparatus is operated substantially as follows. The housing17 is in closed condition, substantially as illustrated in FIG. 1, wherein the edge of the wafer is opposite the groove 59, and the inner periphery of the deflector ring 45 is sealed against the rim 68 of the base, and thefaces 64 and 65 of the wall portion 44 and the deflector ring 45 are sealedagainst each other. The chamber will be purged of all air as the cycle is started by flowing nitrogen into the chamber which also flows through the membrane or diffuser 58, across the diaphragm and out through the groove 59 and discharge port 60. At this time, nitrogen is also flowing inwardly through the ports 41 and the opening 22 in base 20 so that nitrogen flows around the lower side of the wafer, thereby purging all of the air from the chamber. The rinsing port or duct 71 is empty and closed and the entire interior of the head is completey dry.

When purging is complete a presribed etchant gas, preferably comprising a portion of anhydrous hydrogen fluoride gas, a diluent inert gas preferablynitrogen, and a small portion of water vapor is flowed into the etch chamber for a prescribed length of time, depending upon the amount of etching of the oxide film on the wafer which is to be accomplished. Duringthe etching process, the wafer chuck 24 is revolved by the motor at a slow speed, in the range of 20 rpm, and no vacuum is applied for purpose of holding the wafer on the wafer chuck; but on the other hand, during the etching process, nitrogen is supplied through the passage 27 in the shaft 23, and through the opening 28 in the wafer chuck so that a rather small flow of nitrogen continues all during the etching so as to specifically prevent the migration of any of the etchant gas downwardly through the shaft 28 which might otherwise occur had the nitrogen not been flowing. During the etching phase of the cycle, nitrogen continues to flow from theports 41 through the central opening 22 of the base and around the bottom face of the wafer, thereby preventing or minimizing any etching of the bottom face of the wafer. As the etchant gas is diffused by the diffuser 58, it passes through the membrane 58 and is uniformly applied across the entire face of the wafer W. As the etchant gas flows across the face of the wafer, it will pass outwardly through the membrane 63 and into the peripheral groove 59 and be discharged outwardly through the port 60 and tube 62.

When the necessary time has elapsed during the etching phase of the cycle, the flow of the etchant gas is terminated, and the flow of nitrogen from the source controller 53 will continue to flow, and the continued flow of nitrogen, but without the hydrogen fluoride gas, will purge the etch chamber of the etchant gas.

When purging of the chamber 12 has been completed after the etching phase of the cycle, the pneumatic cylinders 81 and 82 are operated to raise the entire housing from the position illustrated in FIG. 1 to the position illustrated in FIG. 2. In this position of the housing, the wafer chuck 24and the edge of the wafer W is directly opposite the entrance to the port 70 and directly opposite the deflection surface 69. The drain tube 79 is open and unobstructed to allow drainage of any collected rinsing liquid which is to be applied during a rinsing phase of the cycle. In preparationfor rinsing, the valve 31 is operated to apply vacuum pressure to the waferchuck 24 as to hold the wafer securely on the wafer chuck; and when the vacuum has been applied, the motor accelerates the wafer to rotate the wafer in the range of 500 to 1,500 rpm. At this time, rinsing liquid, preferably deionized water, is supplied from the source 74 through the valve 73 and port 71 into the chamber 12, and the deionized water is directed onto the upper face of the wafer to be flowed entirely across theupper face of the wafer. The high speed of rotation of the wafer causes therinsing liquid to be slung by centrifugal force outwardly into the passage 70 and onto the deflector face 69 so that the rinsing liquid is collected at the bottom of the passage and will be immediately drained off through the drain port 78 and tube 79.

After completion of the rinse step in the cycle, flow of the rinsing water through duct 71 is terminated, and the valve 73 is operated to draw a vacuum onto the duct 71, thereby sucking out all of the moisture that may remain in the line. At this same time, the nitrogen from the source and controller 53 is continued so as to supply drying nitrogen into the chamber 12 and cause flow of the drying nitrogen through the chamber and out through the passage 70. During this flow of the nitrogen and after thecompletion of the rinsing phase of the cycle, the motor 25 is again accelerated to rotate the wafer W at speeds in the range of 3,000 to 4,000rpm. During this drying phase of the cycle, the cylinders 81 and 82 continue to hold the sidewalls of the housing in the upwardly shifted position as illustrated in FIG. 2; and of course nitrogen continues to flow through the ducts 41 and through the opening 22 in the base 20 so that drying nitrogen will flow through all portions of the chamber.

Subsequent to the drying, it may be desirable to repeat the etching phase of the cycle to remove small portions of native oxide that may have regrown on the face of the wafer. Accordingly, the cyliners 81 and 82, in preparation for renewing the etching phase of the cycle, will withdraw their piston rods to lower the sidewalls and upper portion of the housing into the position of FIG. 1 again wherein the ledge 67 of the deflector ring is sealed against the external rib 68 of the base, and then the entire etch chamber will again be sealed. The chamber will be purged with continued flow of nitrogen from the controller 53 and the etching phase ofthe cycle will be repeated as hereinbefore described. Of course, after the etching phase is completed, the rinsing phase is again repeated as previously described.

After the end of the rinsing phase and drying phase of the cycle, it may bedetermined that processing of the wafer is completed, so that the wafer should be removed from the processing apparatus. The pneumatic cylinder 57is then operated so as to hold the wall portion 44 and the upper wall 47 inthe position illustrated in the FIG. 2. The deflector ring 45 and cup ring 46, being at that time in the upwardly shifted position illustrated in FIG. 2, will be lowered by operation of the cylinders 81 and 82 so that the rings 45 and 46 assume the position illustrated in FIG. 1. The upper portion of the housing remains in the upwardly shifted position illustrated by the dotted lines in FIG. 1 so that the confronting faces 64and 65 of the wall portions 44 and deflector ring 45 are thereby separated to open an access port therebetween through which access to the wafer can be had for removal of the wafer and replacing of the wafer with another.

Finally, when the wafer has been replaced and its position adjusted by the arm or fork 86, the air cylinder 57 is again operated to lower the wall portion 44 onto the deflector ring 45, as to close the etch chamber again in preparation for the etching phase of another cycle.

The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. Therefore, the illustrated embodiments should be considered in all respects as illustrative and not restrictive, reference being made to the appended claims rather than to the foregoing description to indicate the scope of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a section view through the processing apparatus taken substantially at 1--1 of FIG. 2 and having portions broken away for clarity of detail.

FIG. 2 is a section view through the processing apparatus taken approximately at 2--2 of FIG. 1 and having portions broken away for clarity of detail.

FIG. 3 is an enlarged detailed section view taken approximately at 3--3 in FIG. 1.

FIG. 4 is a detailed section view taken along a broken line as indicated substantially at 4--4 in FIG. 2.

This invention relates to the rinsing of silicon wafers after completion of etching steps in the processing of such wafers.

BACKGROUND OF THE INVENTION

In the processing of silicon wafers for the production of integrated circuit chips, numerous steps are involved, some of which involve etching of the oxide films from the wafers. Etching may be accomplished in various ways, but in many instances it is desirable to utilize gas phase etchants which may include hydrogen fluoride gas or other hydrogen halide gases, in many cases diluted with an inert gas such as nitrogen. The etchant gas may include water vapor necessary to start the etching process.

When the actual etching is completed to the degree desired, it is necessary to rinse the etched surface with deionized water for the removal of any by-products of the rinsing process, i.e., any residiual contamination of phosphorous or particulate.

A standard wet or immersion process of rinsing has several disadvantages. For instance, such prior rinsing processes have the disadvantage of uncontrolled particle levels remaining after the rinse, contamination of the surface by electroplation, or by organic contamination. Of course, rinsing by immersion requires additional space in the production areas which is always a matter of importance in manufacturing operations.

SUMMARY OF THE INVENTION

An object of the present invention is to provide for rinsing of a wafer after the completion of etching in a manner to minimize the existence of contamination remaining on the etched surface of the wafer.

A feature of the invention is the performing of the etching and rinsing steps in a single chamber and without handling or moving the wafer between the etch and rinse steps. The chamber requires the gas phase etchant to pass through a membrane to be uniformly applied to the wafer and when the etching is completed, the chamber-defining housing is moved with respect to the wafer to accommodate application of deionized rinse water onto the wafer and simultaneous disposal of the spent rinse water. The wafer remains on its spinning chuck through the rinse.

Subsequently the sequential etch and rinse cycle may be repeated to remove any small amounts of native oxide that may have regrown on the exposed polysilicon surface.

The integrated etch-rinse process, or insitu rinse capability, provides numerous advantages. This rinse process does not add particles to hydrophobic or oxide free wafers. Thick oxide films are removed, ending with very low particle levels; and thin or native oxide layers are removed without adding particles to the remaining surface. The rinse provides removal of device-destroying mobile ion contamination such as sodium, calcium and potassium. Also, the rinse provides for the removal from the wafer surface of electrical lifetime killing metals such as copper, iron, nickel and aluminum. The combination of this rinse is desirable with the use of gas phase etchant which is free of the electroplating properties of aqueous etchant solutions. It is important that the method allows for the application of a final oxide removal process after the rinse, thus providing an ultimate oxide free surface on the wafer.

Of course, integration of the gas phase etching and rinsing without handling the wafer between the etching and rinsing, will save overall process time for the wafer by eliminating transfer time to other operations. Such integration also saves on clean room space for wafer processing due to reduced equipment requirements.

Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US3727620 *18 Mar 197017 Apr 1973Fluoroware Of California IncRinsing and drying device
US3769992 *6 Dec 19716 Nov 1973Fluoroware IncSpray processing machine
US3990462 *19 May 19759 Nov 1976Fluoroware Systems CorporationSubstrate stripping and cleaning apparatus
US4197000 *23 May 19788 Apr 1980Fsi CorporationPositive developing method and apparatus
US4230515 *27 Jul 197828 Oct 1980Davis & Wilder, Inc.Plasma etching apparatus
US4544446 *24 Jul 19841 Oct 1985J. T. Baker Chemical Co.VLSI chemical reactor
US4590042 *24 Dec 198420 May 1986Tegal CorporationPlasma reactor having slotted manifold
US4682614 *26 Jul 198528 Jul 1987Fsi CorporationWafer processing machine
US4682615 *2 Jul 198428 Jul 1987Fsi CorporationRinsing in acid processing of substrates
US4691722 *1 Aug 19848 Sep 1987Fsi CorporationBowl for liquid spray processing machine
US4750505 *25 Apr 198614 Jun 1988Dainippon Screen Mfg. Co., Ltd.Apparatus for processing wafers and the like
US4792378 *15 Dec 198720 Dec 1988Texas Instruments IncorporatedGas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US4801335 *12 Dec 198631 Jan 1989Fsi CorporationRinsing in acid processing of substrates
US4838979 *18 Sep 198713 Jun 1989Dainippon Screen Mfg. Co., Ltd.Apparatus for processing substrate surface
US4857142 *22 Sep 198815 Aug 1989Fsi International, Inc.Method and apparatus for controlling simultaneous etching of front and back sides of wafers
Non-Patent Citations
Reference
1Skidmore, K., "Cleaning Techniques For Wafer Surfaces", Semiconductor International, Aug. 1987 pp. 80-85.
2 *Skidmore, K., Cleaning Techniques For Wafer Surfaces , Semiconductor International, Aug. 1987 pp. 80 85.
3Then, W., "Apparatus For Cleaning & Drying Wafers", IBM Technical Disc. Bulletin, vol. 25, No. 6, Nov. 1982, pp. 2735.
4 *Then, W., Apparatus For Cleaning & Drying Wafers , IBM Technical Disc. Bulletin, vol. 25, No. 6, Nov. 1982, pp. 2735.
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US5259407 *14 Jun 19919 Nov 1993Matrix Inc.Surface treatment method and apparatus for a semiconductor wafer
US5314574 *25 Jun 199324 May 1994Tokyo Electron Kabushiki KaishaSurface treatment method and apparatus
US5332445 *30 Sep 199226 Jul 1994Semitool, Inc.Aqueous hydrofluoric acid vapor processing of semiconductor wafers
US5361449 *1 Oct 19938 Nov 1994Tokyo Electron Kyushu LimitedCleaning apparatus for cleaning reverse surface of semiconductor wafer
US5370741 *18 Nov 19926 Dec 1994Semitool, Inc.Dynamic semiconductor wafer processing using homogeneous chemical vapors
US5375291 *18 May 199327 Dec 1994Tokyo Electron Kyushu LimitedDevice having brush for scrubbing substrate
US5476816 *28 Mar 199419 Dec 1995Motorola, Inc.Process for etching an insulating layer after a metal etching step
US5556479 *15 Jul 199417 Sep 1996Verteq, Inc.Method and apparatus for drying semiconductor wafers
US5570908 *1 Jun 19955 Nov 1996Texas Instruments IncorporatedLow particulate rotary union
US5571337 *9 May 19955 Nov 1996Yieldup InternationalMethod for cleaning and drying a semiconductor wafer
US5589422 *15 Jan 199331 Dec 1996Intel CorporationControlled, gas phase process for removal of trace metal contamination and for removal of a semiconductor layer
US5634978 *14 Nov 19943 Jun 1997Yieldup InternationalUltra-low particle semiconductor method
US5772784 *8 Nov 199530 Jun 1998Yieldup InternationalUltra-low particle semiconductor cleaner
US5849104 *19 Sep 199615 Dec 1998Yieldup InternationalMethod and apparatus for cleaning wafers using multiple tanks
US5868150 *22 May 19979 Feb 1999Yieldup InternationalUltra-low particle semiconductor cleaner
US5873947 *6 Aug 199723 Feb 1999Yieldup InternationalUltra-low particle disk cleaner
US5878760 *22 May 19979 Mar 1999Yieldup InternationalUltra-low particle semiconductor cleaner
US5880032 *30 Jul 19969 Mar 1999Kabushiki Kaisha ToshibaMethod and apparatus for manufacturing a semiconductor device
US5891256 *29 Dec 19976 Apr 1999Yieldup InternationalUltra-low particle semiconductor cleaner
US5932027 *12 Jan 19983 Aug 1999Yieldup InternationalCleaning and drying photoresist coated wafers
US5954911 *26 Feb 199621 Sep 1999Semitool, Inc.Semiconductor processing using vapor mixtures
US5958146 *24 Sep 199828 Sep 1999Yieldup InternationalUltra-low particle semiconductor cleaner using heated fluids
US6047717 *29 Apr 199811 Apr 2000Scd Mountain View, Inc.Mandrel device and method for hard disks
US6092539 *19 Mar 199825 Jul 2000Samsung Electronics Co., Ltd.In-situ cleaning apparatuses for wafers used in integrated circuit devices and methods of cleaning using the same
US6099702 *10 Jun 19988 Aug 2000Novellus Systems, Inc.Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability
US6102057 *9 Feb 199915 Aug 2000StrasbaughLifting and rinsing a wafer
US6131589 *9 Feb 199917 Oct 2000Strasbaugh, Inc.Accurate positioning of a wafer
US6132522 *19 Jul 199617 Oct 2000Cfmt, Inc.Wet processing methods for the manufacture of electronic components using sequential chemical processing
US6158075 *14 Nov 199712 Dec 2000Tokyo Electron LimitedApparatus and method for washing substrate
US621419313 Aug 199910 Apr 2001Novellus Systems, Inc.Electroplating process including pre-wetting and rinsing
US622178127 May 199924 Apr 2001Fsi International, Inc.Combined process chamber with multi-positionable pedestal
US62282329 Jul 19988 May 2001Semitool, Inc.Reactor vessel having improved cup anode and conductor assembly
US6248670 *17 Jan 200019 Jun 2001Techpoint Pacific Singapore Pte. Ltd.Method of wet processing
US627720414 Jun 200021 Aug 2001Samsung Electronics Co., Ltd.Methods for cleaning wafers used in integrated circuit devices
US6280582 *30 Aug 199928 Aug 2001Semitool, Inc.Reactor vessel having improved cup, anode and conductor assembly
US628058330 Aug 199928 Aug 2001Semitool, Inc.Reactor assembly and method of assembly
US62840432 Jul 19984 Sep 2001Tokyo Electron LimitedSolution treatment apparatus
US6286524 *25 Feb 199911 Sep 2001Kabushiki Kaisha ToshibaWafer drying apparatus and method with residual particle removability enhancement
US633426620 Sep 20001 Jan 2002S.C. Fluids, Inc.Supercritical fluid drying system and method of use
US635208221 Sep 19985 Mar 2002Scd Mountain ViewUltra-low particle semiconductor cleaner
US635479430 Apr 200112 Mar 2002Seh America, Inc.Method for automatically transferring wafers between wafer holders in a liquid environment
US6374836 *21 Oct 199823 Apr 2002Hitachi, Ltd.Apparatus for treating plate type part with fluid
US63794693 Oct 200030 Apr 2002Tokyo Electron LimitedApparatus and method for washing substrate
US6405740 *2 Aug 200018 Jun 2002Lam Research CorporationAccurate positioning of a wafer
US6409892 *30 Aug 199925 Jun 2002Semitool, Inc.Reactor vessel having improved cup, anode, and conductor assembly
US642866015 Mar 20016 Aug 2002Semitool, Inc.Reactor vessel having improved cup, anode and conductor assembly
US642866230 Aug 19996 Aug 2002Semitool, Inc.Reactor vessel having improved cup, anode and conductor assembly
US64579293 Nov 19981 Oct 2002Seh America, Inc.Apparatus and method for automatically transferring wafers between wafer holders in a liquid environment
US649104311 Dec 200110 Dec 2002Scd Mountain View, Inc.Ultra-low particle semiconductor cleaner
US64972395 Feb 200124 Dec 2002S. C. Fluids, Inc.Inverted pressure vessel with shielded closure mechanism
US6505635 *30 Jun 200014 Jan 2003Lam Research CorporationLifting and rinsing a wafer
US652786120 Jul 20014 Mar 2003Tokyo Electron LimitedDeveloping apparatus with a porous film nozzle
US654439117 Oct 20008 Apr 2003Semitool, Inc.Reactor for electrochemically processing a microelectronic workpiece including improved electrode assembly
US660234918 May 20015 Aug 2003S.C. Fluids, Inc.Supercritical fluid cleaning process for precision surfaces
US6612315 *2 Nov 20012 Sep 2003Lam Research CorporationBowl, spin, rinse, and dry module, and method for loading a semiconductor wafer into a spin, rinse, and dry module
US67163349 Apr 20016 Apr 2004Novellus Systems, IncElectroplating process chamber and method with pre-wetting and rinsing capability
US673614919 Dec 200218 May 2004Supercritical Systems, Inc.Method and apparatus for supercritical processing of multiple workpieces
US6746615 *14 Sep 20008 Jun 2004Fsi International, Inc.Methods of achieving selective etching
US67489601 Nov 200015 Jun 2004Tokyo Electron LimitedApparatus for supercritical processing of multiple workpieces
US6854473 *17 Apr 200115 Feb 2005Semitool, Inc.Method and apparatus for executing plural processes on a microelectronic workpiece at a single processing station
US687165625 Sep 200229 Mar 2005Tokyo Electron LimitedRemoval of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US688130914 Jun 200119 Apr 2005Semitool, Inc.Diffuser with spiral opening pattern for electroplating reactor vessel
US689041511 Jun 200210 May 2005Semitool, Inc.Reactor vessel having improved cup, anode and conductor assembly
US692145624 Jul 200126 Jul 2005Tokyo Electron LimitedHigh pressure processing chamber for semiconductor substrate
US692601219 Dec 20029 Aug 2005Tokyo Electron LimitedMethod for supercritical processing of multiple workpieces
US700146827 Jan 200321 Feb 2006Tokyo Electron LimitedPressure energized pressure vessel opening and closing device and method of providing therefor
US70216356 Feb 20034 Apr 2006Tokyo Electron LimitedVacuum chuck utilizing sintered material and method of providing thereof
US706042215 Jan 200313 Jun 2006Tokyo Electron LimitedMethod of supercritical processing of a workpiece
US7077917 *10 Feb 200318 Jul 2006Tokyo Electric LimitedHigh-pressure processing chamber for a semiconductor wafer
US709429126 Jun 200122 Aug 2006Semitool, Inc.Semiconductor processing apparatus
US711865821 May 200210 Oct 2006Semitool, Inc.Electroplating reactor
US714039322 Dec 200428 Nov 2006Tokyo Electron LimitedNon-contact shuttle valve for flow diversion in high pressure systems
US716338029 Jul 200316 Jan 2007Tokyo Electron LimitedControl of fluid flow in the processing of an object with a fluid
US71860935 Oct 20046 Mar 2007Tokyo Electron LimitedMethod and apparatus for cooling motor bearings of a high pressure pump
US72258206 Oct 20035 Jun 2007Tokyo Electron LimitedHigh-pressure processing chamber for a semiconductor wafer
US725037430 Jun 200431 Jul 2007Tokyo Electron LimitedSystem and method for processing a substrate using supercritical carbon dioxide processing
US725577221 Jul 200414 Aug 2007Tokyo Electron LimitedHigh pressure processing chamber for semiconductor substrate
US727013728 Apr 200318 Sep 2007Tokyo Electron LimitedApparatus and method of securing a workpiece during high-pressure processing
US729156515 Feb 20056 Nov 2007Tokyo Electron LimitedMethod and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US730701929 Sep 200411 Dec 2007Tokyo Electron LimitedMethod for supercritical carbon dioxide processing of fluoro-carbon films
US7357115 *31 Mar 200315 Apr 2008Lam Research CorporationWafer clamping apparatus and method for operating the same
US735784222 Apr 200515 Apr 2008Sokudo Co., Ltd.Cluster tool architecture for processing a substrate
US738098428 Mar 20053 Jun 2008Tokyo Electron LimitedProcess flow thermocouple
US738786828 Mar 200517 Jun 2008Tokyo Electron LimitedTreatment of a dielectric layer using supercritical CO2
US742203112 Mar 20049 Sep 2008Fsi International, Inc.Rotary unions, fluid delivery systems, and related methods
US743459022 Dec 200414 Oct 2008Tokyo Electron LimitedMethod and apparatus for clamping a substrate in a high pressure processing system
US743544715 Feb 200514 Oct 2008Tokyo Electron LimitedMethod and system for determining flow conditions in a high pressure processing system
US7445015 *30 Sep 20044 Nov 2008Lam Research CorporationCluster tool process chamber having integrated high pressure and vacuum chambers
US749103612 Nov 200417 Feb 2009Tokyo Electron LimitedMethod and system for cooling a pump
US749410730 Mar 200524 Feb 2009Supercritical Systems, Inc.Gate valve for plus-atmospheric pressure semiconductor process vessels
US752438325 May 200528 Apr 2009Tokyo Electron LimitedMethod and system for passivating a processing chamber
US755007523 Mar 200523 Jun 2009Tokyo Electron Ltd.Removal of contaminants from a fluid
US755669714 Jun 20047 Jul 2009Fsi International, Inc.System and method for carrying out liquid and subsequent drying treatments on one or more wafers
US765130622 Dec 200526 Jan 2010Applied Materials, Inc.Cartesian robot cluster tool architecture
US769464719 Jul 200613 Apr 2010Applied Materials, Inc.Cluster tool architecture for processing a substrate
US769902130 Jan 200620 Apr 2010Sokudo Co., Ltd.Cluster tool substrate throughput optimization
US774372821 Apr 200829 Jun 2010Applied Materials, Inc.Cluster tool architecture for processing a substrate
US776714528 Mar 20053 Aug 2010Toyko Electron LimitedHigh pressure fourier transform infrared cell
US778997113 May 20057 Sep 2010Tokyo Electron LimitedTreatment of substrate using functionalizing agent in supercritical carbon dioxide
US779876427 Oct 200621 Sep 2010Applied Materials, Inc.Substrate processing sequence in a cartesian robot cluster tool
US78190798 Sep 200626 Oct 2010Applied Materials, Inc.Cartesian cluster tool configuration for lithography type processes
US792537719 Jul 200612 Apr 2011Applied Materials, Inc.Cluster tool architecture for processing a substrate
US793890610 Jun 200410 May 2011Wuxi Huayingmicro, Ltd.Method and apparatus for dynamic thin-layer chemical processing of semiconductor wafers
US79597697 Nov 200614 Jun 2011Infinite Power Solutions, Inc.Deposition of LiCoO2
US799377321 Aug 20099 Aug 2011Infinite Power Solutions, Inc.Electrochemical apparatus with barrier layer protected substrate
US802177823 Aug 200520 Sep 2011Infinite Power Solutions, Inc.Electrochemical apparatus with barrier layer protected substrate
US806270826 Sep 200722 Nov 2011Infinite Power Solutions, Inc.Masking of and material constraint for depositing battery layers on flexible substrates
US806646620 Jul 201029 Nov 2011Applied Materials, Inc.Substrate processing sequence in a Cartesian robot cluster tool
US816309311 Feb 200924 Apr 2012Wd Media, Inc.Cleaning operations with dwell time
US81977815 Nov 200712 Jun 2012Infinite Power Solutions, Inc.Sputtering target of Li3PO4 and method for producing same
US823506830 Apr 20097 Aug 2012Fsi International, Inc.Substrate processing systems and related methods
US823644316 Mar 20077 Aug 2012Infinite Power Solutions, Inc.Metal film encapsulation
US826020310 Sep 20094 Sep 2012Infinite Power Solutions, Inc.Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
US826848823 Jan 200918 Sep 2012Infinite Power Solutions, Inc.Thin film electrolyte for thin film batteries
US8349085 *31 Jan 20088 Jan 2013Tokyo Electron LimitedSubstrate processing apparatus
US83505192 Apr 20098 Jan 2013Infinite Power Solutions, IncPassive over/under voltage control and protection for energy storage devices associated with energy harvesting
US839452229 Apr 200812 Mar 2013Infinite Power Solutions, Inc.Robust metal film encapsulation
US840437621 Apr 201026 Mar 2013Infinite Power Solutions, Inc.Metal film encapsulation
US843126425 Jul 200830 Apr 2013Infinite Power Solutions, Inc.Hybrid thin-film battery
US844513017 Nov 200621 May 2013Infinite Power Solutions, Inc.Hybrid thin-film battery
US85081937 Oct 200913 Aug 2013Infinite Power Solutions, Inc.Environmentally-powered wireless sensor module
US85185819 Jan 200927 Aug 2013Inifinite Power Solutions, Inc.Thin film encapsulation for thin film batteries and other devices
US853539621 Aug 200917 Sep 2013Infinite Power Solutions, Inc.Electrochemical apparatus with barrier layer protected substrate
US855003115 Jun 20128 Oct 2013Applied Materials, Inc.Cluster tool architecture for processing a substrate
US856274830 Jan 200922 Oct 2013WD Media, LLCMultiple cleaning processes in a single tank
US85995721 Sep 20103 Dec 2013Infinite Power Solutions, Inc.Printed circuit board with integrated thin film battery
US86368767 Dec 200528 Jan 2014R. Ernest DemarayDeposition of LiCoO2
US20080179006 *31 Jan 200831 Jul 2008Tokyo Electron LimitedSubstrate processing apparatus
CN100433243C10 Jun 200412 Nov 2008温子瑛Method and apparatus for thin-layer chemical processing of semiconductor wafers
DE4403552C2 *4 Feb 199416 Aug 2001Hyundai Electronics IndElektronencyclotron-Resonanzvorrichtung
DE10255231B4 *26 Nov 20022 Feb 2006Uhde High Pressure Technologies GmbhHochdruckvorrichtung zum Verschließen eines Druckbehälters im Reinraum
EP0782177A223 Dec 19962 Jul 1997FSI International, Inc.Improvements in or relating to semiconductors
WO1998003273A1 *14 Jul 199729 Jan 1998Cfmt IncWet processing methods for the manufacture of electronic components using sequential chemical processing
WO2000003067A1 *9 Jul 199920 Jan 2000Semitool IncReactor vessel having improved cup, anode and conductor assembly
WO2001087505A1 *18 May 200122 Nov 2001S C Fluids IncSupercritical fluid cleaning process for precision surfaces
WO2002011911A1 *5 Feb 200114 Feb 2002S C Fluids IncInverted pressure vessel with shielded closure mechanism
WO2004073036A2 *9 Feb 200426 Aug 2004Supercritical Systems IncHigh-pressure processing chamber for a semiconductor wafer
WO2004114375A1 *10 Jun 200429 Dec 2004Sophia WenMethod and apparatus for thin-layer chemical processing of semiconductor wafers
WO2012139527A1 *14 Apr 201218 Oct 2012Wuxi Huaying Microelectronics Technology Co., Ltd.Semiconductor processing device
Classifications
U.S. Classification29/25.01, 134/177, 134/151, 134/902, 134/157, 134/155, 134/144, 134/149, 134/182, 134/154
International ClassificationH01L21/00
Cooperative ClassificationY10S134/902, H01L21/67023
European ClassificationH01L21/67S2D2
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