US4909914A - Reaction apparatus which introduces one reacting substance within a convergent-divergent nozzle - Google Patents

Reaction apparatus which introduces one reacting substance within a convergent-divergent nozzle Download PDF

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US4909914A
US4909914A US07/053,555 US5355587A US4909914A US 4909914 A US4909914 A US 4909914A US 5355587 A US5355587 A US 5355587A US 4909914 A US4909914 A US 4909914A
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nozzle
substance
flow
convergent
reaction
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Yuji Chiba
Kenji Ando
Tatsuo Masaki
Masao Sugata
Kuniji Osabe
Osamu Kamiya
Hiroyuki Sugata
Toshiaki Kimura
Masahiro Haruta
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Canon Inc
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Canon Inc
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Priority claimed from JP9889785A external-priority patent/JPS61220769A/en
Priority claimed from JP14582385A external-priority patent/JPS627431A/en
Priority claimed from JP14582485A external-priority patent/JPS627442A/en
Application filed by Canon Inc filed Critical Canon Inc
Assigned to CANON KABUSHIKI KAISHA reassignment CANON KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: ANDO, KENJI, CHIBA, YUJI, KAMIYA, OSAMU, KIMURA, TOSHIAKI, MASAKI, YOSHIKO, OSABE, KUNIJI, SUGATA, HIROYUKI, SUGATA, MASAO
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/26Nozzle-type reactors, i.e. the distribution of the initial reactants within the reactor is effected by their introduction or injection through nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48Ion implantation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45582Expansion of gas before it reaches the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585Compression of gas before it reaches the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/32Plasma torches using an arc
    • H05H1/34Details, e.g. electrodes, nozzles
    • H05H1/3484Convergent-divergent nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049Controlling or regulating processes
    • B01J2219/00051Controlling the temperature
    • B01J2219/00054Controlling or regulating the heat exchange system
    • B01J2219/00056Controlling or regulating the heat exchange system involving measured parameters
    • B01J2219/00065Pressure measurement
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049Controlling or regulating processes
    • B01J2219/00162Controlling or regulating processes controlling the pressure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049Controlling or regulating processes
    • B01J2219/00164Controlling or regulating processes controlling the flow
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049Controlling or regulating processes
    • B01J2219/00245Avoiding undesirable reactions or side-effects

Definitions

  • the present invention relates to a reaction apparatus for raw materials which are in gaseous state or can be formed as a substantially gaseous flow such as fine liquid or solid particles suspended in gas, and in particular to a reaction apparatus equipped with a convergent-divergent nozzle.
  • the convergent-divergent nozzle means a nozzle in which the aperture is gradually constricted from the inlet to an intermediate part to form a throat, and is then gradually spread from said throat to the outlet.
  • the reaction means not only chemical reactions but also physical changes not involving chemical reaction, such as phase changes of the raw materials among gaseous, liquid and solid phases, formation of a cluster, or activation of raw materials.
  • the U.S. Pat. No. 4,200,264 discloses an apparatus for producing metallic Mg or Ca by a carbon reduction method.
  • Said apparatus produces finely powdered Mg or Ca by heating an oxide of Mg or Ca and carbon to induce a reduction reaction therebetween, and introducing the obtained product into a divergent nozzle for instantaneous cooling by adiabatic expansion.
  • the divergent nozzle in said apparatus achieves instantaneous cooling of the mixture of Mg (or Ca) and CO to prevent the reverse reaction therebetween, utilizing a fact that said nozzle rapidly cools the passing gas by adiabatic expansion.
  • Said divergent nozzle functions under a condition of underexpansion, and is utilized for separating Mg (or Ca) and CO.
  • the divergent nozzle in the aforementioned apparatus is utilized as means for preventing reverse reaction of the products, Mg (or Ca) and CO, and separating said products before they are introduced into condensers, but is not utilized as reaction control means for maintaining the products as an easily processable beam flow.
  • the gas flow from the divergent nozzle is decelerated, diffused after ejection and does not reach the acoustic velocity.
  • the ejecting velocity from the nozzle can be supersonic but the state of flow after ejection is determined by whether the pressure Pj of the gas flow at the ejection approximately coincides with the pressure P in the downstream side of the divergent nozzle.
  • the gas passing through the divergent nozzle flows along the internal wall at the outlet of said nozzle and is ejected as a flow having a uniform distribution of speed in the cross-sectional direction.
  • the flow is decelerated and is diffused.
  • the divergent nozzle in the aforementioned apparatus is employed, as explained above, in a mode irrelevant to the formation of a flow under optimum expansion, so that the flow ejected from the divergent nozzle is inevitably diffused.
  • the products in finely powdered state are diffused in the entire capturing chamber, and a part of such products contacts the walls thereof, thus causing deposition thereon or losing activity.
  • These phenomena lead to various drawbacks such as a loss in production yield and contamination of the reaction products with unreacted substances.
  • the reaction products transported in a diffused flow are difficult to capture and results also in a lowered yield.
  • certain raw materials or reaction products require activation by plasma or laser beam irradiation after passing the nozzle, but such activation is difficult to achieve in a diffused flow, so that a general-purpose reaction apparatus is difficult to obtain.
  • An object of the present invention is to provide a novel reaction apparatus not associated with the above-mentioned drawbacks of the conventional technology.
  • Another object of the present invention is to provide a reaction apparatus capable of transporting material to be reacted or reaction products in a form of a beam.
  • Still another object of the present invention is to provide a reaction apparatus and an energy supplying process allowing effective energy supply to the materials to be reacted.
  • the present invention provides a reaction apparatus provided with a flow control system composed of a convergent-divergent nozzle.
  • the present invention provides a reaction apparatus provided with a convergent-divergent nozzle in which a field of reaction is formed.
  • the present invention provides a process for supplying energy to a flow of fine particles which comprises supplying energy to the downstream side of a flow path involving the interior of the convergent-divergent nozzle.
  • FIG. 1 is a schematic view of an embodiment of the present invention
  • FIG. 2 comprising FIGS. 2A, 2B and 2C, are schematic views of examples of the form of the convergent-divergent nozzle.
  • FIG. 3 comprising FIGS. 3A and 3B, are schematic views of examples of the form of the convergent-divergent nozzle.
  • FIG. 4 comprising FIGS. 4A and 4B, are schematic views of examples of the form of the convergent-divergent nozzle.
  • FIG. 5 is an exploded perspective view of a convergent-divergent nozzle incorporating electrode
  • FIG. 6 is a schematic view showing other embodiments of the present invention.
  • FIG. 7, comprising FIGS. 7A, 7B, 7C and 7D, are schematic views showing other embodiments of the present invention.
  • raw materials or reaction products are introduced from an inlet 1a of a convergent-divergent nozzle 1 to a throat 1b thereof, and are ejected as an optimum expansion flow from an outlet 1c.
  • the optimum expansion flow means a flow ejected from the convergent-divergent nozzle 1 and having a pressure Pj, at the ejection, substantially equal to the pressure P of the downstream side of the nozzle 1.
  • the Mach number M reached by the flow is determined as a function of the pressure Po in an upstream chamber 2 and the pressure P of a downstream chamber 3, by the following equation: ##EQU1## wherein u is the velocity of the fluid, a is the acoustic velocity at the outlet, and ⁇ is the ratio of specific heats of the flow material.
  • the acoustic velocity a can be determined from the following equation: ##EQU2## wherein T is the local temperature and R is gas constant. Also there stands the following relation among the aperture area A at the outlet 1c, aperture area A* at the throat 1b and Mach number M: ##EQU3##
  • the flow reaches a state of optimum expansion flow in case the Mach number M determined by the equation (1) as a function of the pressure ratio P/Po of the upstream chamber 2 and the downstream chamber 3 coincides with the Mach number determined by the equation (2) as a function of the aperture area A of the outlet 1c and the aperture area A* of the throat 1b. In such state the ratio P/Po is below the critical ratio of pressure, and the Mach number M exceeds 1.
  • the flow velocity u can be determined from the following equation (3): ##EQU4## wherein To represents the temperature of the upstream chamber 3.
  • An optimum expansion flow ejected from the outlet 1c of the nozzle 1 flows along the inner wall of the outlet 1c with a substantially uniform velocity distribution in the cross section and is formed as a beam, which means a linear flow of a substantially fixed trajectory.
  • the beam formation minimizes the diffusion and allows to maintain the raw materials or the reaction products, ejected from the nozzle 1, in a spatially independent state from the walls of the downstream chamber 3, thus preventing undesirable effects caused by contact with the walls.
  • the loss in yield caused by diffusion can also be prevented if the flow is captured in the beam state by a substrate 4.
  • the activation of the raw materials or reaction products with plasma or laser beam irradiation can be more effectively achieved by effecting such energy supply onto the flow in a beam state.
  • the "beam” in the present invention means a jet stream flowing with directivity in one direction and with a higher density than that of surrounding space irrespective of the shape of the section of the stream.
  • the beam characteristics can be detected by measuring the stream intensity of flying molecules by means of an orifice connected to a differential evacuation system of a mass spectrometer and moving perpendicularly across the beam.
  • the output from the mass spectrometer reaches the maximum value at the center of the beam.
  • the output value will decrease gradually with the distance from the center.
  • the distance between the center of the beam and the point where the detected value has decreased to half the maximum output is measured.
  • the beam diameter is defined as twice the distance measured above.
  • the divergence of the beam is evaluated by the divergence angle of the beam defined by the formula below: ##EQU5## where d 1 denotes the beam diameter at a distance l 1 from the exit of the nozzle to downstream direction, and d 2 at the distance l 2 .
  • the desirable ⁇ value depends on the application field and the size restriction. It is generally not more than ⁇ /6, preferably ⁇ /12, and more preferably ⁇ /18. With a nozzle of non-circular nozzle section, the divergence angle can be defined correspondingly to the above definition of ⁇ .
  • the divergence of the beam can be evaluated from the ⁇ value be means of a laser doppler velocimeter or photo correlation spectroscopy employing the technology of light-scattering spectroscopy.
  • the mass flow rate m of the flow passing through the nozzle 1 can be determined from the following equation (5), and is a function of the aperture area A* of the throat 1b for given values of the pressure Po and temperature To of the upstream chamber 2, or a function of said pressure Po and temperature To for a given value of the aperture area A* of the throat 1b: ##EQU7## Consequently reaction products of a constant amount can be easily obtained continuously, and the supply of raw materials can be easily made corresponding to the amount of reaction products.
  • FIG. 1 shows an embodiment of the present invention, wherein shown are a convergent-divergent nozzle 1, an upstream chamber 2 and a downstream chamber 3.
  • the upstream chamber 2 and the downstream chamber 3 are mutually connected by the convergent-divergent nozzle 1, and the upstream chamber 2 is provided with a valve 5a for introducing a raw material A and a pressure sensor S 1 for detecting the pressure in the upstream chamber 2.
  • the downstream chamber 3 is provided with a valve 5b for supplying a raw material B to be reacted with said raw material A, and contains, in a position confronting the outlet 1c of the nozzle 1, a substrate 4 for capturing a reaction product C obtained by a reaction of the raw materials A and B.
  • the substrate 4 is supported so as to be movable by a driving unit 10.
  • the downstream chamber 3 is connected with a pump 5 through a valve 5c and with a pressure sensor S 2 for detecting the pressure in the downstream chamber 3.
  • the inlet 1a of the convergent-divergent nozzle 1 is opened in the upstream chamber 2 while the outlet 1c is opened in the downstream chamber 3.
  • a pressure sensor S 3 for detecting the pressure of the flow at the ejection.
  • the raw material A is ejected from the upstream chamber 2 into the downstream chamber 3 through the convergent-divergent nozzle 1 and reacts in contact with the raw material B in the downstream chamber 3, thereby forming a reaction product C which is captured by the substrate 4.
  • the flow forms an optimum expansion flow in a beam form through an adjustment of the pressure Po, P detected by the sensors S 1 , S 2 in such a manner that the pressure Pj detected by the sensor S 3 be substantially equal to the pressure P detected by the sensor S 2 .
  • a nozzle 1 with a ratio A/A* of the aperture area A of the outlet 1c to that A* of the throat 1b adjusted according to the necessary pressures Po and P.
  • the raw material A As the raw material A is ejected as a beam flow into the downstream chamber 3, and contacts the raw material B during the flow in the downstream chamber 3 to form the reaction product C which is directly captured by the substrate 4, the raw materials, A, B as well as the product C are hardly diffused in the downstream chamber 3 and the product C can be continuously obtained with an elevated yield. A part of the raw material B is discharged from the system by the pump 6 but it can be recycled to the system.
  • the raw material A in the form of a beam flow has to be brought into sufficient contact with the raw material B in the downstream chamber 3.
  • the raw material B is gaseous and consists of molecules having a mean free path l
  • the molecules can be considered to be present at an interval l in the downstream chamber 3. Consequently, if said mean free path is constant, the frequency of contact, of the raw material A during the movement in the downstream chamber 3, with the molecules of the raw material B can be controlled by the adjustment of the flow path length in the downstream chamber 3.
  • Said adjustment can be made, for example, by moving the substrate 4 with the driving unit 10 in the direction of flow path. Also said adjustment can be achieved by regulating the mean free path l of the gas molecules if the flow path length is constant in the downstream chamber 3.
  • the mean free path l of the gaseous molecules of the raw material B in the downstream chamber 3 can be determined approximately by the following equation (6): ##EQU8## wherein ⁇ is the diameter of the gaseous molecules B in the chamber 3, and n is the number of molecules per unit volume.
  • is the diameter of the gaseous molecules B in the chamber 3
  • n is the number of molecules per unit volume.
  • the equation (6) can be transformed into (6'): ##EQU9## Since m and ⁇ are determined by the species of gas, l can be controlled by ⁇ , so that the frequency of collision of the molecules of the raw materials A and B can be controlled. Also l can be maintained constant by maintaining ⁇ constant.
  • can be determined by the following equation (7): ##EQU10## wherein R is gas constant and t' is the temperature in the downstream chamber 3. Accordingly ⁇ can be controlled by the pressure P of the downstream chamber 3 of the temperature t' thereof. Besides, as explained above, the flow velocity from a given convergent-divergent nozzle 1 is determined by P/Po if the temperature in the upstream chamber 2 is constant. Consequently a constant flow velocity can be obtained if the density ⁇ of the gas molecules and the ratio P/Po are maintained constant.
  • the raw material A can be brought into sufficient contact with the raw material B within said active life, by maintaining the density ⁇ of the gas molecules of the material B and the ratio P/Po constant, utilizing a flow speed determined by A/A* and P/Po and a flow path length which the molecules can travel within said active life.
  • the convergent-divergent nozzle 1 has an aperture which is gradually constricted from the inlet 1a to the throat 1b and is gradually diverges therefrom to the outlet 1c, and the differential coefficient of flow curve of the inner wall of the nozzle varies continuously and reaches zero at the throat to minimize the growth of a boundary layer of the flow in the nozzle 1.
  • the flow curve of the inner wall means the curve of the inner wall in a cross section along the direction of flow. It is therefore rendered possible to select the effective cross section of the flow in the convergent-divergent nozzle 1 close to the designed value and thus to fully exploit the performance of the nozzle 1. Also as shown in FIG.
  • the internal periphery of the outlet 1c is preferably substantially parallel to the cenral axis.
  • a parallel flow can be obtained more easily in this manner, since the ejected flow follows the direction of internal surface of the outlet 1c.
  • said parallel portion may be dispensed with if the angle ⁇ of the internal surface, from the throat 1b to the outlet 1c, to the central axis is maintained not exceeding 7°, preferably not exceeding 5°, as shown in FIG. 2B, since the peeling-off phenomenon does not occur easily in such state and the ejected flow is maintained almost linear.
  • the absence of such parallel portion facilitates the manufacture of the convergent-divergent nozzle 1.
  • a slit-formed flow can be obtained by the use of a rectangular nozzle as shown in FIG. 2C.
  • Said peeling-off phenomenon is a phenomenon of the enlargement of the boundary layer between the inner wall of the nozzle 1 and the passing fluid, for example in the presence of projections on said inner wall, leading to an uneven flow, and tends to appear when the velocity of the ejected flow is higher.
  • the above-mentioned angle ⁇ should preferably be smaller when the inner wall of the nozzle 1 is finished less precisely, in order to prevent said peeling-off phenomenon.
  • the inner wall of the nozzle 1 is preferably finished with a precision indicated by three, or preferably four, inverted triangles, as defined in the Japanese Industrial Standard B 0601 for the surface finishing precision.
  • the surface finishing precision should be determined principally on said divergent part, and the manufacture of the nozzle 1 can be facilitated in this manner. Also in order to prevent such peeling-off phenomenon, the throat should have a smooth curve in such a manner that the differential coefficient of the change of the cross section does not become infinitely large.
  • the convergent-divergent nozzle 1 can be composed of various materials, for example a metal, such as iron or stainless steel, plastic material such as acrylic resin, polyvinyl chloride, polyethylene, polystyrene and polypropylene, ceramics, quartz, or glass. Said material can be selected in consideration of the absence of reactivity with the raw material A or B or with the reaction product C, working property, gas emission in vacuum etc. Also the inner wall of the nozzle 1 may be plated or coated with a material of low reactivity, such as coating with polyfluoroethylene.
  • the inner wall of the nozzle 1 may be formed or coated with a material stimulating a chemical reaction. More specifically said inner wall may be formed with a catalyst-supporting material or a porous material with a catalytic function, or may be coated with a reactive material.
  • the length of the convergent-divergent nozzle 1 can be determined arbitrarily, for example according to the length of the apparatus.
  • the flow In passing the convergent-divergent nozzle 1, the flow is subjected to a conversion of the thermal energy thereof to kinetic energy, and a supercooled state can be obtained if the thermal energy of the flow is selected low and the speed thereof is selected high.
  • a condensable component in the raw material A can be condensed and formed into fine particles by the decrease of temperature.
  • the convergent-divergent nozzle 1 should preferably be longer in order to achieve sufficient condensation.
  • condensation increases the thermal energy and decreases the kinetic energy. Consequently, in order to maintain a high-speed ejection, the nozzle 1 should preferably be shorter.
  • FIG. 3A shows a nozzle structure in which the parallel portion in the vicinity of the downstream outlet is elongated.
  • the nozzle with such elongated parallel portion provides a lower flow speed at the outlet, in comparison with the nozzle shown in FIG. 2A, but there are obtained particular distributions of pressure and temperature in the nozzle. More specifically, the pressure and temperature show isentropic decrease in the movement from the throat to an outlet portion 1c', but they are both increased again by the increase of thermal energy in the course of movement in the parallel portion. Consequently the pressure condition at the outlet 1c can be determined corresponding to thus increased pressure, and a low pressure condition can be realized without increasing the capacity of the pump.
  • the convergent-divergent nozzle 1 may be provided, as shown in FIG. 3B, with two or more throats 1b, 1b', . . . If an optimum expansion flow is formed with such convergent-divergent nozzle of multiple stages, the flow is accelerated and decelerated repeatedly in the nozzle 1, with accompanying decrease and increase of temperature. It is therefore possible to stimulate the reaction by such temperature change.
  • the convergent-divergent nozzle 1 may be provided, at the wall of the throat, with plural raw material supply holes 9.
  • the raw material passing in the nozzle induces a Venturi effect, by means of which another raw material can be supplied as mist.
  • This structure allows to supply said another raw material in quantitative manner even if it is liquid.
  • the supply holes 9 are formed in a position between the throat 1b and the inlet of the nozzle 1, and to supply another raw material capable of reacting with the raw material flowing in the nozzle 1.
  • the convergent-divergent nozzle 1 with such supply holes 9 is capable, for example in case of reacting two or more raw material in the flow, of preventing the deposition on the walls of the upstream chamber 2 by a reaction therein, since all the raw materials need not be supplied in said upstream chamber 2.
  • the reaction apparatus of the present invention is also capable of activating the raw materials by the supply of energy from the exterior in the nozzle.
  • the nozzle itself is formed as electrodes.
  • FIGS. 5A and 5B are exploded perspective views of a convergent-divergent nozzle constituting electrodes.
  • Said nozzle is composed, as illustrated, of upper and lower members composed of electric conductors and constituting a pair of electrodes 8a, 8b, and electric insulators 7 positioned between said upper and lower members.
  • a DC or high-frequency AC current is applied between said electrodes 8a, 8b to generate plasma in the nozzle 1.
  • the electrodes 8a, 8b can be composed of a metal such as iron or copper.
  • the electric insulators 7, separating the electrodes 8a, 8b can be composed for example of insulating plastics, ceramics, quarts or glass.
  • the inner wall of the upper and lower members of the nozzle may be plated or coated with an electric conductor capable of preventing reaction or deposition, or such plated or coated layer may be employed as the electrodes 8a, 8b.
  • the reaction product can be captured in an arbitrary area of the substrate 4 by inclining the nozzle 1 in the vertical or horizontal direction, or by causing a scanning motion at a regular interval.
  • Such operating mode is useful in case of film formation with the reaction product C on the substrate 4, and particularly effective in combination with the rectangular nozzle shown in FIG. 2C.
  • the time from the reaction of the raw materials A, B to the capture on the substrate 4 can be regulated by moving the substrate to or away from the nozzle 1 by means of a driving unit 10.
  • a raw material or a reaction product with a very short life of activity can be captured in the active state by positioning the substrate 4 close to the position of activation.
  • the substrate may be heated or cooled in order to facilitate capturing. Particularly by cooling the substrate 4, the capture thereon may be achieved by condensing or solidifying.
  • the reaction may also be conducted by intermittently opening and closing the nozzle 1 with a valve. Under a given evacuating condition, such intermittent opening and closing allow to achieve a high degree of vacuum more easily in the downstream chamber 3. On the other hand, if the upstream chamber 2 is pressurized, such elevated pressure can be more easily maintained. Also in case an energy for activation etc. is supplied in the nozzle or in the downstream side thereof, such energy supply may be synchronized with said intermittent opening and closing to economize energy.
  • Examples of the energy supplied according to the present invention are microwave and other electromagnetic waves, light of various wavelengths such as ultraviolet light, infrared light or a laser beam, and an electron beam.
  • the above-mentioned energy supply to the fine particles can be carried out at the upstream side of the throat 1b of the convergent-divergent nozzle 1 as indicated by A in FIG. 6, in the downstream side of the convergent-divergent nozzle 1, including the throat thereof, as indicated by B, in the flow path behind the nozzle 1 as indicated by C, along the flow path from the upstream side of the nozzle 1 as indicated by D, along the flow path from the rear side of a trans parent substrate 4 as indicated by E, diagonally to the crossing point of the flow path and the substrate 4 as indicated by F, or by the combinations thereof.
  • the energy supply at the position A or B allows to use the interior of the nozzle 1 as a field for generating fine particles and as a field of reaction, thereby eventually dispensing with the upstream chamber 2.
  • the energy supply in the direction of D if conducted with a laser beam, allows to obtain a film of fine particles on the substrate 4, only on the extension of a small area irradiated by the laser beam. In this state, if the laser beam reaches the surface of the substrate 4, laser annealing can be simultaneously applied to said surface. Also in case of supply of energy of another wavelength region, the position of gas excitation can also be arbitrarily selected by the intensity and transmittance of the energy.
  • the energy supply in the direction of E allows to simultaneously elevate the temperature of the substrate 4, thereby promoting the deposition of fine particles onto the substrate 4.
  • the energy supply in the direction of F allows to simultaneously achieve heating of the substrate 4, reaction on the surface thereof, and annealing effect.
  • FIGS. 7A to 7D show examples of reaction conducted in the apparatus of the present invention.
  • the raw material A supplied into the upstream chamber 2 is activated for example by the energy supply in the nozzle 1 or in the beam state thereafter to generate a physically modified species A' which is captured on the substrate 4 in the downstream chamber 3.
  • the mutually reacting raw materials A, B are supplied in the upstream chamber 2 and generate the reaction product C before they reach the substrate 4 through the nozzle 1, and said reaction product C is captured by said substrate 4 in the downstream chamber 3.
  • at least the inner wall of the nozzle 1 may be composed of a catalyst stimulating the reaction of the raw materials A, B.
  • the raw material A supplied into the upstream chamber 2 is formed as a beam and reaches the substrate 4 in the downstream chamber 3.
  • the surface of the substrate 4 is composed of the raw material B capable of reacting with the raw material A, and the beam thereof collides with the surface of the substrate 4 and reacts with the raw material B to be captured as the reaction product C.
  • the kinetic energy of collision of the ultrasonic beam with the substrate 4 can be utilized for the reaction.
  • the raw material B on the substrate 4 can be solid or impregnated therein.
  • the raw materials A and B are respectively supplied to separate upstream chambers 2, 2', and are supplied in separate beams through separate nozzles 1, 1' into a same downstream chamber 3. These beams collide with each other in the downstream chamber 3 to cause the reaction of the raw materials A and B, and the resulting product C is captured by the substrate 4. In this manner the start position of reaction of the raw materials A, B can be arbitrarily selected in the downstream chamber 3.
  • the apparatus of the present invention being capable of transporting raw materials or reaction products as a beam in a determined direction, allows to minimize the decrease production yield caused by the interference with the walls of the downstream chamber and the diffusion of the flow, and to effect the reaction in a spatially independent area thereby obtaining a highly pure product without any interference in an ideal field of reaction.
  • the supply of energy for reaction is facilitated since the diffusion of flow is suppressed, and the flow rate can be easily controlled. Consequently the energy can be supplied in an amount matching the reaction without waste.
  • the present invention is useful for industrial mass production as the raw materials as well as reaction starting means such as an activation energy can be continuously supplied from the exterior, thus enabling continuous process over a prolonged period.
  • the present invention being capable of transporting raw materials or reaction products at an supersonic velocity, allows to receive the raw materials or reaction products of an extremely short life of activity by the substrate in the active state. Also since the flow can be brought to an energetically frozen state in the nozzle 1, it is rendered possible to define a microscopic state of the molecules in the flow and to deal with the transition from a state to another. It is thus rendered possible to effect a novel chemical vapor reaction, in which the molecules are defined even to the energy level thereof and are given an energy corresponding to said energy level. There is also provided a novel field of energy transfer, whereby there can be easily obtained intermolecular compounds formed with a relatively weak intermolecular force such as hydrogen bond or van de Waals force.

Abstract

A reaction apparatus is provided which comprises a flow control system provided with a convergent-divergent nozzle. This nozzle is operated under the optimum expansion condition, and the differential coefficient of the streamline of the channel inside the nozzle varies continuously and reaches zero at a throat of the nozzle.

Description

This application is a continuation-in-part of application Ser. No. 843,570 filed Mar. 25, 1986, now abandoned.
BACKGROUND OF THE INVENTION
The present invention relates to a reaction apparatus for raw materials which are in gaseous state or can be formed as a substantially gaseous flow such as fine liquid or solid particles suspended in gas, and in particular to a reaction apparatus equipped with a convergent-divergent nozzle.
In the present specification, the convergent-divergent nozzle means a nozzle in which the aperture is gradually constricted from the inlet to an intermediate part to form a throat, and is then gradually spread from said throat to the outlet. The reaction means not only chemical reactions but also physical changes not involving chemical reaction, such as phase changes of the raw materials among gaseous, liquid and solid phases, formation of a cluster, or activation of raw materials.
DESCRIPTION OF THE RELATED ART
The U.S. Pat. No. 4,200,264 discloses an apparatus for producing metallic Mg or Ca by a carbon reduction method.
Said apparatus produces finely powdered Mg or Ca by heating an oxide of Mg or Ca and carbon to induce a reduction reaction therebetween, and introducing the obtained product into a divergent nozzle for instantaneous cooling by adiabatic expansion.
The divergent nozzle in said apparatus achieves instantaneous cooling of the mixture of Mg (or Ca) and CO to prevent the reverse reaction therebetween, utilizing a fact that said nozzle rapidly cools the passing gas by adiabatic expansion. Said divergent nozzle functions under a condition of underexpansion, and is utilized for separating Mg (or Ca) and CO.
Stated differently, the divergent nozzle in the aforementioned apparatus is utilized as means for preventing reverse reaction of the products, Mg (or Ca) and CO, and separating said products before they are introduced into condensers, but is not utilized as reaction control means for maintaining the products as an easily processable beam flow.
However, the use of a divergent nozzle for rapid cooling to a temperature suitable for preventing a reaction, or for accelerating the products to a desired velocity is irrelevant to the state of flow of the gas that has passed the nozzle.
In case the pressure in the throat of the divergent nozzle is below the critical pressure, the gas flow from the divergent nozzle is decelerated, diffused after ejection and does not reach the acoustic velocity. On the other hand, if the pressure in said throat is equal to or higher than the critical pressure, the ejecting velocity from the nozzle can be supersonic but the state of flow after ejection is determined by whether the pressure Pj of the gas flow at the ejection approximately coincides with the pressure P in the downstream side of the divergent nozzle. A state of Pj=P is called an optimum expansion, while a state of Pj>P is called underexpansion, and a state of Pj<P is called overexpansion. In case of the optimum expansion, the gas passing through the divergent nozzle flows along the internal wall at the outlet of said nozzle and is ejected as a flow having a uniform distribution of speed in the cross-sectional direction. On the other hand, in case of underexpansion or overexpansion, the flow is decelerated and is diffused.
However, the divergent nozzle in the aforementioned apparatus is employed, as explained above, in a mode irrelevant to the formation of a flow under optimum expansion, so that the flow ejected from the divergent nozzle is inevitably diffused. Once such diffused flow is generated, the products in finely powdered state are diffused in the entire capturing chamber, and a part of such products contacts the walls thereof, thus causing deposition thereon or losing activity. These phenomena lead to various drawbacks such as a loss in production yield and contamination of the reaction products with unreacted substances. Further, the reaction products transported in a diffused flow are difficult to capture and results also in a lowered yield. Besides, certain raw materials or reaction products require activation by plasma or laser beam irradiation after passing the nozzle, but such activation is difficult to achieve in a diffused flow, so that a general-purpose reaction apparatus is difficult to obtain.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a novel reaction apparatus not associated with the above-mentioned drawbacks of the conventional technology.
Another object of the present invention is to provide a reaction apparatus capable of transporting material to be reacted or reaction products in a form of a beam.
Still another object of the present invention is to provide a reaction apparatus and an energy supplying process allowing effective energy supply to the materials to be reacted.
More specifically the present invention provides a reaction apparatus provided with a flow control system composed of a convergent-divergent nozzle.
Also, the present invention provides a reaction apparatus provided with a convergent-divergent nozzle in which a field of reaction is formed.
Furthermore the present invention provides a process for supplying energy to a flow of fine particles which comprises supplying energy to the downstream side of a flow path involving the interior of the convergent-divergent nozzle.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic view of an embodiment of the present invention;
FIG. 2, comprising FIGS. 2A, 2B and 2C, are schematic views of examples of the form of the convergent-divergent nozzle.
FIG. 3, comprising FIGS. 3A and 3B, are schematic views of examples of the form of the convergent-divergent nozzle.
FIG. 4, comprising FIGS. 4A and 4B, are schematic views of examples of the form of the convergent-divergent nozzle.
FIG. 5, comprising FIGS. 5A and 5B, is an exploded perspective view of a convergent-divergent nozzle incorporating electrode; and
FIG. 6 is a schematic view showing other embodiments of the present invention.
FIG. 7, comprising FIGS. 7A, 7B, 7C and 7D, are schematic views showing other embodiments of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
In the present invention, as shown in FIG. 1, raw materials or reaction products are introduced from an inlet 1a of a convergent-divergent nozzle 1 to a throat 1b thereof, and are ejected as an optimum expansion flow from an outlet 1c. The optimum expansion flow means a flow ejected from the convergent-divergent nozzle 1 and having a pressure Pj, at the ejection, substantially equal to the pressure P of the downstream side of the nozzle 1.
In case the flow is adiabatically expanded in the convergent-divergent nozzle 1, the Mach number M reached by the flow is determined as a function of the pressure Po in an upstream chamber 2 and the pressure P of a downstream chamber 3, by the following equation: ##EQU1## wherein u is the velocity of the fluid, a is the acoustic velocity at the outlet, and γ is the ratio of specific heats of the flow material.
The acoustic velocity a can be determined from the following equation: ##EQU2## wherein T is the local temperature and R is gas constant. Also there stands the following relation among the aperture area A at the outlet 1c, aperture area A* at the throat 1b and Mach number M: ##EQU3## The flow reaches a state of optimum expansion flow in case the Mach number M determined by the equation (1) as a function of the pressure ratio P/Po of the upstream chamber 2 and the downstream chamber 3 coincides with the Mach number determined by the equation (2) as a function of the aperture area A of the outlet 1c and the aperture area A* of the throat 1b. In such state the ratio P/Po is below the critical ratio of pressure, and the Mach number M exceeds 1. The flow velocity u can be determined from the following equation (3): ##EQU4## wherein To represents the temperature of the upstream chamber 3.
An optimum expansion flow ejected from the outlet 1c of the nozzle 1 flows along the inner wall of the outlet 1c with a substantially uniform velocity distribution in the cross section and is formed as a beam, which means a linear flow of a substantially fixed trajectory. The beam formation minimizes the diffusion and allows to maintain the raw materials or the reaction products, ejected from the nozzle 1, in a spatially independent state from the walls of the downstream chamber 3, thus preventing undesirable effects caused by contact with the walls. The loss in yield caused by diffusion can also be prevented if the flow is captured in the beam state by a substrate 4. Furthermore the activation of the raw materials or reaction products with plasma or laser beam irradiation can be more effectively achieved by effecting such energy supply onto the flow in a beam state.
The "beam" in the present invention means a jet stream flowing with directivity in one direction and with a higher density than that of surrounding space irrespective of the shape of the section of the stream.
When the jet stream comprises molecular particles, the beam characteristics can be detected by measuring the stream intensity of flying molecules by means of an orifice connected to a differential evacuation system of a mass spectrometer and moving perpendicularly across the beam.
With a nozzle having a circular cross section, the output from the mass spectrometer reaches the maximum value at the center of the beam. The output value will decrease gradually with the distance from the center. The distance between the center of the beam and the point where the detected value has decreased to half the maximum output is measured. The beam diameter is defined as twice the distance measured above.
The divergence of the beam is evaluated by the divergence angle of the beam defined by the formula below: ##EQU5## where d1 denotes the beam diameter at a distance l1 from the exit of the nozzle to downstream direction, and d2 at the distance l2.
The desirable θ value depends on the application field and the size restriction. It is generally not more than π/6, preferably π/12, and more preferably π/18. With a nozzle of non-circular nozzle section, the divergence angle can be defined correspondingly to the above definition of θ.
For ultra-fine particles, the divergence of the beam can be evaluated from the θ value be means of a laser doppler velocimeter or photo correlation spectroscopy employing the technology of light-scattering spectroscopy.
On the other hand, there stands the following relation between the thermal energy and kinetic energy of a flow: ##EQU6## Consequently the temperature of the flow can be regulated according to the flow speed, and particularly in the present invention, the raw materials or reaction products can be brought to frozen or supercooled state since the flow can reach an supersonic velocity.
The aforementioned equations (1) and (2) are valid only in case of adiabatic expansion of the flow but are no longer valid when the flow absorbs or releases heat in the convergent-divergent nozzle 1. However, even in such a case, an optimum expansion flow can be obtained by suitable regulation of P/Po and A/A* according to the amount of such heat absorption or generation.
The mass flow rate m of the flow passing through the nozzle 1 can be determined from the following equation (5), and is a function of the aperture area A* of the throat 1b for given values of the pressure Po and temperature To of the upstream chamber 2, or a function of said pressure Po and temperature To for a given value of the aperture area A* of the throat 1b: ##EQU7## Consequently reaction products of a constant amount can be easily obtained continuously, and the supply of raw materials can be easily made corresponding to the amount of reaction products.
FIG. 1 shows an embodiment of the present invention, wherein shown are a convergent-divergent nozzle 1, an upstream chamber 2 and a downstream chamber 3.
The upstream chamber 2 and the downstream chamber 3 are mutually connected by the convergent-divergent nozzle 1, and the upstream chamber 2 is provided with a valve 5a for introducing a raw material A and a pressure sensor S1 for detecting the pressure in the upstream chamber 2.
The downstream chamber 3 is provided with a valve 5b for supplying a raw material B to be reacted with said raw material A, and contains, in a position confronting the outlet 1c of the nozzle 1, a substrate 4 for capturing a reaction product C obtained by a reaction of the raw materials A and B. The substrate 4 is supported so as to be movable by a driving unit 10. The downstream chamber 3 is connected with a pump 5 through a valve 5c and with a pressure sensor S2 for detecting the pressure in the downstream chamber 3.
The inlet 1a of the convergent-divergent nozzle 1 is opened in the upstream chamber 2 while the outlet 1c is opened in the downstream chamber 3. In the vicinity of said outlet 1c there is provided a pressure sensor S3 for detecting the pressure of the flow at the ejection.
When the raw materials A and B are supplied as the downstream chamber 3 is evacuated by the pump 6, the raw material A is ejected from the upstream chamber 2 into the downstream chamber 3 through the convergent-divergent nozzle 1 and reacts in contact with the raw material B in the downstream chamber 3, thereby forming a reaction product C which is captured by the substrate 4. The flow forms an optimum expansion flow in a beam form through an adjustment of the pressure Po, P detected by the sensors S1, S2 in such a manner that the pressure Pj detected by the sensor S3 be substantially equal to the pressure P detected by the sensor S2. Also there may be employed a nozzle 1 with a ratio A/A* of the aperture area A of the outlet 1c to that A* of the throat 1b adjusted according to the necessary pressures Po and P.
As the raw material A is ejected as a beam flow into the downstream chamber 3, and contacts the raw material B during the flow in the downstream chamber 3 to form the reaction product C which is directly captured by the substrate 4, the raw materials, A, B as well as the product C are hardly diffused in the downstream chamber 3 and the product C can be continuously obtained with an elevated yield. A part of the raw material B is discharged from the system by the pump 6 but it can be recycled to the system.
The raw material A in the form of a beam flow has to be brought into sufficient contact with the raw material B in the downstream chamber 3. If the raw material B is gaseous and consists of molecules having a mean free path l, the molecules can be considered to be present at an interval l in the downstream chamber 3. Consequently, if said mean free path is constant, the frequency of contact, of the raw material A during the movement in the downstream chamber 3, with the molecules of the raw material B can be controlled by the adjustment of the flow path length in the downstream chamber 3. Said adjustment can be made, for example, by moving the substrate 4 with the driving unit 10 in the direction of flow path. Also said adjustment can be achieved by regulating the mean free path l of the gas molecules if the flow path length is constant in the downstream chamber 3.
The mean free path l of the gaseous molecules of the raw material B in the downstream chamber 3 can be determined approximately by the following equation (6): ##EQU8## wherein σ is the diameter of the gaseous molecules B in the chamber 3, and n is the number of molecules per unit volume. As the density ρ of the gaseous molecules is expressed by ρ=mn, wherein m is the mass of the molecule, the equation (6) can be transformed into (6'): ##EQU9## Since m and σ are determined by the species of gas, l can be controlled by ρ, so that the frequency of collision of the molecules of the raw materials A and B can be controlled. Also l can be maintained constant by maintaining ρ constant.
On the other hand, ρ can be determined by the following equation (7): ##EQU10## wherein R is gas constant and t' is the temperature in the downstream chamber 3. Accordingly ρ can be controlled by the pressure P of the downstream chamber 3 of the temperature t' thereof. Besides, as explained above, the flow velocity from a given convergent-divergent nozzle 1 is determined by P/Po if the temperature in the upstream chamber 2 is constant. Consequently a constant flow velocity can be obtained if the density ρ of the gas molecules and the ratio P/Po are maintained constant. Particularly even with a short life of activity, the raw material A can be brought into sufficient contact with the raw material B within said active life, by maintaining the density ρ of the gas molecules of the material B and the ratio P/Po constant, utilizing a flow speed determined by A/A* and P/Po and a flow path length which the molecules can travel within said active life.
As explained before, the convergent-divergent nozzle 1 has an aperture which is gradually constricted from the inlet 1a to the throat 1b and is gradually diverges therefrom to the outlet 1c, and the differential coefficient of flow curve of the inner wall of the nozzle varies continuously and reaches zero at the throat to minimize the growth of a boundary layer of the flow in the nozzle 1. In the present invention, the flow curve of the inner wall means the curve of the inner wall in a cross section along the direction of flow. It is therefore rendered possible to select the effective cross section of the flow in the convergent-divergent nozzle 1 close to the designed value and thus to fully exploit the performance of the nozzle 1. Also as shown in FIG. 2A, the internal periphery of the outlet 1c is preferably substantially parallel to the cenral axis. A parallel flow can be obtained more easily in this manner, since the ejected flow follows the direction of internal surface of the outlet 1c. However, said parallel portion may be dispensed with if the angle α of the internal surface, from the throat 1b to the outlet 1c, to the central axis is maintained not exceeding 7°, preferably not exceeding 5°, as shown in FIG. 2B, since the peeling-off phenomenon does not occur easily in such state and the ejected flow is maintained almost linear. The absence of such parallel portion facilitates the manufacture of the convergent-divergent nozzle 1. Also a slit-formed flow can be obtained by the use of a rectangular nozzle as shown in FIG. 2C.
Said peeling-off phenomenon is a phenomenon of the enlargement of the boundary layer between the inner wall of the nozzle 1 and the passing fluid, for example in the presence of projections on said inner wall, leading to an uneven flow, and tends to appear when the velocity of the ejected flow is higher. The above-mentioned angle α should preferably be smaller when the inner wall of the nozzle 1 is finished less precisely, in order to prevent said peeling-off phenomenon. The inner wall of the nozzle 1 is preferably finished with a precision indicated by three, or preferably four, inverted triangles, as defined in the Japanese Industrial Standard B 0601 for the surface finishing precision. Since the peeling-off phenomenon in the divergent part of the nozzle 1 significantly affects the state of ensuing flow, the surface finishing precision should be determined principally on said divergent part, and the manufacture of the nozzle 1 can be facilitated in this manner. Also in order to prevent such peeling-off phenomenon, the throat should have a smooth curve in such a manner that the differential coefficient of the change of the cross section does not become infinitely large.
The convergent-divergent nozzle 1 can be composed of various materials, for example a metal, such as iron or stainless steel, plastic material such as acrylic resin, polyvinyl chloride, polyethylene, polystyrene and polypropylene, ceramics, quartz, or glass. Said material can be selected in consideration of the absence of reactivity with the raw material A or B or with the reaction product C, working property, gas emission in vacuum etc. Also the inner wall of the nozzle 1 may be plated or coated with a material of low reactivity, such as coating with polyfluoroethylene.
On the other hand, the inner wall of the nozzle 1 may be formed or coated with a material stimulating a chemical reaction. More specifically said inner wall may be formed with a catalyst-supporting material or a porous material with a catalytic function, or may be coated with a reactive material.
The length of the convergent-divergent nozzle 1 can be determined arbitrarily, for example according to the length of the apparatus. In passing the convergent-divergent nozzle 1, the flow is subjected to a conversion of the thermal energy thereof to kinetic energy, and a supercooled state can be obtained if the thermal energy of the flow is selected low and the speed thereof is selected high. Thus, a condensable component in the raw material A can be condensed and formed into fine particles by the decrease of temperature. In such case the convergent-divergent nozzle 1 should preferably be longer in order to achieve sufficient condensation. On the other hand, such condensation increases the thermal energy and decreases the kinetic energy. Consequently, in order to maintain a high-speed ejection, the nozzle 1 should preferably be shorter.
FIG. 3A shows a nozzle structure in which the parallel portion in the vicinity of the downstream outlet is elongated. The nozzle with such elongated parallel portion provides a lower flow speed at the outlet, in comparison with the nozzle shown in FIG. 2A, but there are obtained particular distributions of pressure and temperature in the nozzle. More specifically, the pressure and temperature show isentropic decrease in the movement from the throat to an outlet portion 1c', but they are both increased again by the increase of thermal energy in the course of movement in the parallel portion. Consequently the pressure condition at the outlet 1c can be determined corresponding to thus increased pressure, and a low pressure condition can be realized without increasing the capacity of the pump.
Also the convergent-divergent nozzle 1 may be provided, as shown in FIG. 3B, with two or more throats 1b, 1b', . . . If an optimum expansion flow is formed with such convergent-divergent nozzle of multiple stages, the flow is accelerated and decelerated repeatedly in the nozzle 1, with accompanying decrease and increase of temperature. It is therefore possible to stimulate the reaction by such temperature change.
Also as shown in FIG. 4A, the convergent-divergent nozzle 1 may be provided, at the wall of the throat, with plural raw material supply holes 9. In this structure, the raw material passing in the nozzle induces a Venturi effect, by means of which another raw material can be supplied as mist. This structure allows to supply said another raw material in quantitative manner even if it is liquid.
It is also possible, as shown in FIG. 4B, to form the supply holes 9 in a position between the throat 1b and the inlet of the nozzle 1, and to supply another raw material capable of reacting with the raw material flowing in the nozzle 1. In this case it is possible to prevent disorder in the flow ejected from the nozzle 1, by placing the supply holes 9 sufficiently apart from the throat 1b of the nozzle 1. The convergent-divergent nozzle 1 with such supply holes 9 is capable, for example in case of reacting two or more raw material in the flow, of preventing the deposition on the walls of the upstream chamber 2 by a reaction therein, since all the raw materials need not be supplied in said upstream chamber 2.
The reaction apparatus of the present invention is also capable of activating the raw materials by the supply of energy from the exterior in the nozzle. In the following there will be explained an example in which the nozzle itself is formed as electrodes.
FIGS. 5A and 5B are exploded perspective views of a convergent-divergent nozzle constituting electrodes. Said nozzle is composed, as illustrated, of upper and lower members composed of electric conductors and constituting a pair of electrodes 8a, 8b, and electric insulators 7 positioned between said upper and lower members. A DC or high-frequency AC current is applied between said electrodes 8a, 8b to generate plasma in the nozzle 1. The electrodes 8a, 8b can be composed of a metal such as iron or copper. The electric insulators 7, separating the electrodes 8a, 8b can be composed for example of insulating plastics, ceramics, quarts or glass. These materials can be selected in consideration of the lack of reactivity with the reaction products, working properties, gas emission in vacuum etc. Also the inner wall of the upper and lower members of the nozzle may be plated or coated with an electric conductor capable of preventing reaction or deposition, or such plated or coated layer may be employed as the electrodes 8a, 8b.
The reaction product can be captured in an arbitrary area of the substrate 4 by inclining the nozzle 1 in the vertical or horizontal direction, or by causing a scanning motion at a regular interval. Such operating mode is useful in case of film formation with the reaction product C on the substrate 4, and particularly effective in combination with the rectangular nozzle shown in FIG. 2C.
The time from the reaction of the raw materials A, B to the capture on the substrate 4 can be regulated by moving the substrate to or away from the nozzle 1 by means of a driving unit 10. Thus a raw material or a reaction product with a very short life of activity can be captured in the active state by positioning the substrate 4 close to the position of activation. The substrate may be heated or cooled in order to facilitate capturing. Particularly by cooling the substrate 4, the capture thereon may be achieved by condensing or solidifying.
It is also possible to receive the beam over a large area by supporting the substrate 4 with the driving unit 10 in rotatable manner or movable manner in the vertical and horizontal directions. It is furthermore possible to treat the substrate 4 of a web form with the reaction product C by receiving the beam while the substrate is gradually advanced from a roll. Furthermore the treatment with the reaction product C may be applied on a rotating drum-shaped substrate 4.
The reaction may also be conducted by intermittently opening and closing the nozzle 1 with a valve. Under a given evacuating condition, such intermittent opening and closing allow to achieve a high degree of vacuum more easily in the downstream chamber 3. On the other hand, if the upstream chamber 2 is pressurized, such elevated pressure can be more easily maintained. Also in case an energy for activation etc. is supplied in the nozzle or in the downstream side thereof, such energy supply may be synchronized with said intermittent opening and closing to economize energy.
Examples of the energy supplied according to the present invention are microwave and other electromagnetic waves, light of various wavelengths such as ultraviolet light, infrared light or a laser beam, and an electron beam.
The above-mentioned energy supply to the fine particles can be carried out at the upstream side of the throat 1b of the convergent-divergent nozzle 1 as indicated by A in FIG. 6, in the downstream side of the convergent-divergent nozzle 1, including the throat thereof, as indicated by B, in the flow path behind the nozzle 1 as indicated by C, along the flow path from the upstream side of the nozzle 1 as indicated by D, along the flow path from the rear side of a trans parent substrate 4 as indicated by E, diagonally to the crossing point of the flow path and the substrate 4 as indicated by F, or by the combinations thereof.
The energy supply at the position A or B allows to use the interior of the nozzle 1 as a field for generating fine particles and as a field of reaction, thereby eventually dispensing with the upstream chamber 2.
The energy supply in the direction of D, if conducted with a laser beam, allows to obtain a film of fine particles on the substrate 4, only on the extension of a small area irradiated by the laser beam. In this state, if the laser beam reaches the surface of the substrate 4, laser annealing can be simultaneously applied to said surface. Also in case of supply of energy of another wavelength region, the position of gas excitation can also be arbitrarily selected by the intensity and transmittance of the energy.
The energy supply in the direction of E allows to simultaneously elevate the temperature of the substrate 4, thereby promoting the deposition of fine particles onto the substrate 4.
The energy supply in the direction of F allows to simultaneously achieve heating of the substrate 4, reaction on the surface thereof, and annealing effect.
FIGS. 7A to 7D show examples of reaction conducted in the apparatus of the present invention.
In case of FIG. 7A, the raw material A supplied into the upstream chamber 2 is activated for example by the energy supply in the nozzle 1 or in the beam state thereafter to generate a physically modified species A' which is captured on the substrate 4 in the downstream chamber 3.
In case of FIG. 7B, the mutually reacting raw materials A, B are supplied in the upstream chamber 2 and generate the reaction product C before they reach the substrate 4 through the nozzle 1, and said reaction product C is captured by said substrate 4 in the downstream chamber 3. In this case at least the inner wall of the nozzle 1 may be composed of a catalyst stimulating the reaction of the raw materials A, B.
In case of FIG. 7C, the raw material A supplied into the upstream chamber 2 is formed as a beam and reaches the substrate 4 in the downstream chamber 3. The surface of the substrate 4 is composed of the raw material B capable of reacting with the raw material A, and the beam thereof collides with the surface of the substrate 4 and reacts with the raw material B to be captured as the reaction product C. In case of effecting reaction on the surface of the substrate 4, the kinetic energy of collision of the ultrasonic beam with the substrate 4 can be utilized for the reaction. The raw material B on the substrate 4 can be solid or impregnated therein.
In case of FIG. 7D, the raw materials A and B are respectively supplied to separate upstream chambers 2, 2', and are supplied in separate beams through separate nozzles 1, 1' into a same downstream chamber 3. These beams collide with each other in the downstream chamber 3 to cause the reaction of the raw materials A and B, and the resulting product C is captured by the substrate 4. In this manner the start position of reaction of the raw materials A, B can be arbitrarily selected in the downstream chamber 3.
The apparatus of the present invention, being capable of transporting raw materials or reaction products as a beam in a determined direction, allows to minimize the decrease production yield caused by the interference with the walls of the downstream chamber and the diffusion of the flow, and to effect the reaction in a spatially independent area thereby obtaining a highly pure product without any interference in an ideal field of reaction. The supply of energy for reaction is facilitated since the diffusion of flow is suppressed, and the flow rate can be easily controlled. Consequently the energy can be supplied in an amount matching the reaction without waste. Particularly the present invention is useful for industrial mass production as the raw materials as well as reaction starting means such as an activation energy can be continuously supplied from the exterior, thus enabling continuous process over a prolonged period.
The use of an optimum expansion flow provides a large kinetic energy in a beam flow and enables to define an irradiated area, and these properties can be utilized for implantation of neutral particles, cutting, etching, etc.
On the other hand, the present invention, being capable of transporting raw materials or reaction products at an supersonic velocity, allows to receive the raw materials or reaction products of an extremely short life of activity by the substrate in the active state. Also since the flow can be brought to an energetically frozen state in the nozzle 1, it is rendered possible to define a microscopic state of the molecules in the flow and to deal with the transition from a state to another. It is thus rendered possible to effect a novel chemical vapor reaction, in which the molecules are defined even to the energy level thereof and are given an energy corresponding to said energy level. There is also provided a novel field of energy transfer, whereby there can be easily obtained intermolecular compounds formed with a relatively weak intermolecular force such as hydrogen bond or van de Waals force.
Furthermore, as the field of reaction can be concentrated to the nozzle, it is rendered possible to achieve effective energy supply, to compactize the apparatus and to realize the reaction in a flow system.

Claims (4)

What is claimed is:
1. Apparatus for reacting a first substance with a second substance, comprising a convergent-divergent nozzle including a pair of electrodes, means for creating an electric field between the electrodes to generate active particles in the first substance, and gas supply means arranged to supply to the nozzle a carrier gas with the first substance dispersed therein, the second substance being arranged to react with the first substance issuing from the nozzle,
wherein the electrodes comprise longitudinally separated halves of the nozzle with electrically insulating material therebetween.
2. Apparatus for reacting a first substance with a second substance, comprising a convergent-divergent nozzle including a pair of electrodes, means for creating an electric field between the electrodes to generate active particles in the first substance, and gas supply means arranged to supply to the nozzle a carrier gas with the first substance dispersed therein, the second substance being arranged to react with the first substance issuing from the nozzle,
wherein the electrodes comprise coated or plated layers on the inner surface of the nozzle, the nozzle being formed of any electrically insulating material.
3. A method of reacting a first substance with a second substance, the first substance comprising active particles, which method comprises passing a carrier gas with the first substance dispersed therein through a convergent-divergent nozzle comprising a pair of electrodes, creating an electric field between the electrodes to generate active particles in the first substance, and causing the first substance issuing from the nozzle to react with the second substance,
wherein the electrodes comprise longitudinally separated halves of the nozzle with electrically insulating material therebetween.
4. A method of reacting a first substance with a second substance, the first substance comprising active particles, which method comprises passing a carrier gas with the first substance dispersed therein through a convergent-divergent nozzle comprising a pair of electrodes, creating an electric field between the electrodes to generate active particles in the first substance, and causing the first substance issuing from the nozzle to react with the second substance,
wherein the electrodes comprise coated or plated layers on the inner surface of the nozzle, the nozzle being formed of an electrically insulating material.
US07/053,555 1985-05-11 1987-05-21 Reaction apparatus which introduces one reacting substance within a convergent-divergent nozzle Expired - Lifetime US4909914A (en)

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JP9889785A JPS61220769A (en) 1985-05-11 1985-05-11 Method for providing energy to fine particle flow
JP60-098897 1985-05-11
JP60-145824 1985-07-04
JP14582385A JPS627431A (en) 1985-07-04 1985-07-04 Reaction apparatus
JP60-145823 1985-07-04
JP14582485A JPS627442A (en) 1985-07-04 1985-07-04 Reaction apparatus

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Cited By (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079403A (en) * 1990-10-22 1992-01-07 W. A. Whitney Corp. Nozzle for plasma arc torch
US5132512A (en) * 1988-06-07 1992-07-21 Hypertherm, Inc. Arc torch nozzle shield for plasma
US5134963A (en) * 1991-10-28 1992-08-04 International Business Machines Corporation LPCVD reactor for high efficiency, high uniformity deposition
US5173336A (en) * 1991-01-22 1992-12-22 Santa Barbara Research Center Metal organic chemical vapor deposition (MOCVD) reactor with recirculation suppressing flow guide
US5239161A (en) * 1991-03-26 1993-08-24 Agence Spatiale Europeenne Plasma flux spraying method of treating the surface of a substrate, for example, and apparatus for implementing the method
US5256205A (en) * 1990-05-09 1993-10-26 Jet Process Corporation Microwave plasma assisted supersonic gas jet deposition of thin film materials
US5356672A (en) * 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
US5445324A (en) * 1993-01-27 1995-08-29 The United States Of America As Represented By The United States Department Of Energy Pressurized feed-injection spray-forming apparatus
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
US5730806A (en) * 1993-08-30 1998-03-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Gas-liquid supersonic cleaning and cleaning verification spray system
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
US5749937A (en) * 1995-03-14 1998-05-12 Lockheed Idaho Technologies Company Fast quench reactor and method
US5762009A (en) * 1995-06-07 1998-06-09 Alliant Techsystems, Inc. Plasma energy recycle and conversion (PERC) reactor and process
US5904567A (en) * 1984-11-26 1999-05-18 Semiconductor Energy Laboratory Co., Ltd. Layer member forming method
US6163009A (en) * 1998-10-23 2000-12-19 Innerlogic, Inc. Process for operating a plasma arc torch
US6204197B1 (en) 1984-02-15 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6245390B1 (en) * 1999-09-10 2001-06-12 Viatcheslav Baranovski High-velocity thermal spray apparatus and method of forming materials
WO2001046067A1 (en) * 1999-12-21 2001-06-28 Bechtel Bwxt Idaho, Llc Hydrogen and elemental carbon production from natural gas and other hydrocarbons
US6302142B1 (en) * 2000-06-01 2001-10-16 Trw Inc. Supersonic gas flow device incorporating a compact supersonic diffuser
US6326583B1 (en) 2000-03-31 2001-12-04 Innerlogic, Inc. Gas control system for a plasma arc torch
US6446503B1 (en) * 1997-12-15 2002-09-10 Tokyo Gas Co., Ltd. Flow velocity measuring apparatus and methods using sensors for measuring larger and smaller flow quantities
US6498317B2 (en) 1998-10-23 2002-12-24 Innerlogic, Inc. Process for operating a plasma arc torch
US20030109092A1 (en) * 2001-10-25 2003-06-12 Won-Kook Choi Surface smoothing device and method thereof
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6677551B2 (en) 1998-10-23 2004-01-13 Innerlogic, Inc. Process for operating a plasma arc torch
US6701942B2 (en) * 2001-03-28 2004-03-09 Samsung Electronics Co., Ltd. Method of and apparatus for removing contaminants from surface of a substrate
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
US20040208805A1 (en) * 1995-03-14 2004-10-21 Fincke James R. Thermal synthesis apparatus
US6821500B2 (en) 1995-03-14 2004-11-23 Bechtel Bwxt Idaho, Llc Thermal synthesis apparatus and process
US20050067393A1 (en) * 2001-08-22 2005-03-31 Matile Olivier Method and installation for laser beam cutting using a multiple-focus objective and a convergent/divergent nozzle
US20060103318A1 (en) * 2004-11-17 2006-05-18 Bechtel Bwxt Idaho, Llc Chemical reactor and method for chemically converting a first material into a second material
US20070138147A1 (en) * 2005-12-21 2007-06-21 Sulzer Metco (Us), Inc. Hybrid plasma-cold spray method and apparatus
US20080131587A1 (en) * 2006-11-30 2008-06-05 Boroson Michael L Depositing organic material onto an oled substrate
US20090151322A1 (en) * 2007-12-18 2009-06-18 Perriquest Defense Research Enterprises Llc Plasma Assisted Combustion Device
US20100163719A1 (en) * 2008-12-30 2010-07-01 Agilent Technologies, Inc. Converging-diverging supersonic shock disruptor for fluid nebulization and drop fragmentation
US20100247766A1 (en) * 2009-03-25 2010-09-30 University Of Michigan Nozzle geometry for organic vapor jet printing
US20100270142A1 (en) * 2009-04-23 2010-10-28 Battelle Energy Alliance, Llc Combustion flame plasma hybrid reactor systems, chemical reactant sources and related methods
US20100304045A1 (en) * 2007-09-11 2010-12-02 Michael Bisges Method of and apparatus for treating or coating a surface
US20110084000A1 (en) * 2009-10-14 2011-04-14 Marathon Oil Canada Corporation Systems and methods for processing nozzle reactor pitch
US20110091646A1 (en) * 2009-10-20 2011-04-21 Muataz Aliatieh Orifice chemical vapor deposition reactor
US20110147896A1 (en) * 2008-08-18 2011-06-23 Iwatani Corporation Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component
US20110180454A1 (en) * 2010-01-28 2011-07-28 Marathon Oil Canada Corporation Methods for preparing solid hydrocarbons for cracking
FR2955628A1 (en) * 2010-01-27 2011-07-29 Centre Nat Rech Scient METHOD AND DEVICE FOR MODULATING THE MASS FLOW OF A GAS FLOW
US8636958B2 (en) * 2011-09-07 2014-01-28 Marathon Oil Canada Corporation Nozzle reactor and method of use
US20140230730A1 (en) * 2004-04-12 2014-08-21 Applied Materials, Inc. Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
WO2014070419A3 (en) * 2012-10-31 2014-11-06 Physical Shockwave Industrial Applications, Llc Process and apparatus for supersonic collision shockwave reaction mechanism making chemical compounds
WO2015031447A1 (en) * 2013-08-27 2015-03-05 The Regents Of The University Of Michigan Converging/diverging magnetic nozzle
JP2015522397A (en) * 2012-04-27 2015-08-06 リアクティブ・メタル・パーティクルズ・アーエスReactive Metal Particles As Apparatus and method for producing particles
US20150245459A1 (en) * 2014-02-24 2015-08-27 Lincoln Global, Inc. Nozzle throat for thermal processing and torch equipment
WO2016018911A1 (en) * 2014-07-28 2016-02-04 Barnette Darrel Rotating and oscillating breaching device with reactive material
US20160145741A1 (en) * 2014-10-30 2016-05-26 Centro de Investigación en Materiales Avanzados, S.C. Injection nozzle for aerosols and their method of use to deposit different coatings via vapor chemical deposition assisted by aerosol
US9365463B1 (en) 2011-06-13 2016-06-14 Darrel Barnette Rotating and oscillating breaching device with reactive material
US20170048961A1 (en) * 2015-08-12 2017-02-16 Thermacut, S.R.O. Plasma Arc Torch Nozzle with Variably-Curved Orifice Inlet Profile
US20180008941A1 (en) * 2016-03-23 2018-01-11 Alfa Laval Corporate Ab Apparatus for dispersing particles in a liquid
US9920926B1 (en) 2017-07-10 2018-03-20 Thermochem Recovery International, Inc. Pulse combustion heat exchanger system and method
US9949356B2 (en) 2012-07-11 2018-04-17 Lincoln Global, Inc. Electrode for a plasma arc cutting torch
EP3346808A1 (en) * 2017-01-06 2018-07-11 INP Greifswald Leibniz-institut Fuer Plasmaforschung Und Technologie E. V. Planar device and method for generating a plasma or reactive species
US10099200B1 (en) 2017-10-24 2018-10-16 Thermochem Recovery International, Inc. Liquid fuel production system having parallel product gas generation
US10214418B2 (en) 2011-09-27 2019-02-26 Thermochem Recovery International, Inc. Method for converting biomass into fischer-tropsch products with carbon dioxide recycling
US10222060B2 (en) 2016-02-16 2019-03-05 Thermochem Recovery International, Inc. Two-stage energy-integrated product gas generation system and method
US10287519B2 (en) 2016-03-25 2019-05-14 Thermochem Recovery International, Inc. Three-stage energy-integrated product gas generation system
US20190368033A1 (en) * 2018-06-05 2019-12-05 United Technologies Corporation Selective vapor deposition process for additive manufacturing
US10815440B2 (en) 2010-11-05 2020-10-27 Thermochem Recovery International, Inc. Systems and methods for producing syngas from a solid carbon-containing substance using a reactor having hollow engineered particles
WO2020260743A1 (en) * 2019-06-25 2020-12-30 Picosun Oy Plasma in a substrate processing apparatus
US20200411294A1 (en) * 2019-06-25 2020-12-31 Picosun Oy Plasma in a substrate processing apparatus
US20210207270A1 (en) * 2020-01-08 2021-07-08 Asm Ip Holding B.V. Injector
US20210222300A1 (en) * 2020-01-21 2021-07-22 Samsung Electronics Co., Ltd. Substrate processing apparatus, material layer deposition apparatus, and atmospheric pressure chemical vapor deposition apparatus
US20220020564A1 (en) * 2020-07-14 2022-01-20 Ap Plasma Corporation Plasma generating device
US11365016B2 (en) 2013-08-27 2022-06-21 The Regents Of The University Of Michigan Electrodeless plasma thruster
US11370982B2 (en) 2016-08-30 2022-06-28 Thermochem Recovery International, Inc. Method of producing liquid fuel from carbonaceous feedstock through gasification and recycling of downstream products
US11380557B2 (en) * 2017-06-05 2022-07-05 Applied Materials, Inc. Apparatus and method for gas delivery in semiconductor process chambers
US11384432B2 (en) * 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US11466223B2 (en) 2020-09-04 2022-10-11 Thermochem Recovery International, Inc. Two-stage syngas production with separate char and product gas inputs into the second stage
US11555157B2 (en) 2020-03-10 2023-01-17 Thermochem Recovery International, Inc. System and method for liquid fuel production from carbonaceous materials using recycled conditioned syngas
RU2789412C1 (en) * 2019-06-25 2023-02-02 Пикосан Ой Apparatus for plasma processing of substrates
US11732355B2 (en) * 2018-12-20 2023-08-22 Applied Materials, Inc. Method and apparatus for supplying improved gas flow to a processing volume of a processing chamber
US11905978B2 (en) 2019-04-08 2024-02-20 Norma Germany Gmbh Jet pump

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3641437A1 (en) * 1985-12-04 1987-06-11 Canon Kk FINE PARTICLE BLOWING DEVICE
DE3741672A1 (en) * 1987-12-09 1989-06-22 Asea Brown Boveri METHOD AND ARRANGEMENT FOR THE SURFACE TREATMENT OF SUBSTRATES
GB8914047D0 (en) * 1989-06-19 1989-08-09 Glaverbel Method of and apparatus for pyrolytically forming an oxide coating on a hot glass substrate
US5221352A (en) * 1989-06-19 1993-06-22 Glaverbel Apparatus for pyrolytically forming an oxide coating on a hot glass substrate
DE19851359A1 (en) * 1998-11-07 2000-05-11 Franz Pobo Industrial process water subjected to compression and expansion in a series of chambers extending water service life prior to disposal
BRPI1005304A2 (en) 2009-02-05 2019-04-09 Dow Global Technologies Llc primer nozzle

Citations (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB222209A (en) * 1923-06-27 1924-09-29 John Ernest Mortimer Improvements relating to the regulation of the flow of fluids, and means therefor
GB415446A (en) * 1931-11-25 1934-08-27 Daimler Benz Ag Method of and means for stabilising the flow of gas in pipes connected to reciprocating piston machines
US2175160A (en) * 1935-07-02 1939-10-03 Linde Air Prod Co Nozzle for cutting blowpipes
GB721364A (en) * 1951-06-29 1955-01-05 Conservatoire Nat Des Arts & M Variable section nozzle neck
US2919370A (en) * 1958-10-28 1959-12-29 Plasmadyne Corp Electrodeless plasma torch and method
US3003939A (en) * 1955-08-31 1961-10-10 Lord Mfg Co Method and apparatus for producing and enhancing chemical reaction in flowable reactant material
US3005762A (en) * 1958-01-20 1961-10-24 Aero Chem Res Lab Inc Electric discharge jet stream
US3010009A (en) * 1958-09-29 1961-11-21 Plasmadyne Corp Method and apparatus for uniting materials in a controlled medium
US3075065A (en) * 1960-10-04 1963-01-22 Adriano C Ducati Hyperthermal tunnel apparatus and electrical plasma-jet torch incorporated therein
US3280018A (en) * 1960-08-01 1966-10-18 Siderurgie Fse Inst Rech Method for chemically reacting flowing gases
GB1057120A (en) * 1964-12-09 1967-02-01 Siemens Ag An arrangement for setting and keeping constant the mass flow of gases
US3309873A (en) * 1964-08-31 1967-03-21 Electro Optical Systems Inc Plasma accelerator using hall currents
GB1092534A (en) * 1964-05-06 1967-11-29 Nuclear Power Plant Co Ltd Fluid control means
GB1155495A (en) * 1968-01-31 1969-06-18 Congost Luis Tennis Toy for Playing on a Table
US3507294A (en) * 1966-12-14 1970-04-21 Philco Ford Corp Fluid flow control apparatus
US3556409A (en) * 1967-11-30 1971-01-19 Aga Ab Fluid control device
US3670400A (en) * 1969-05-09 1972-06-20 Nat Res Dev Process and apparatus for fabricating a hot worked metal layer from atomized metal particles
GB1336253A (en) * 1971-03-11 1973-11-07 Gaz De France Pressure regulating and reducing gas-flow meter for industrial installations
US3801346A (en) * 1971-11-15 1974-04-02 Zachrey H Co Method for applying particulate coating material to a work piece
US3839618A (en) * 1972-01-03 1974-10-01 Geotel Inc Method and apparatus for effecting high-energy dynamic coating of substrates
US3904505A (en) * 1970-03-20 1975-09-09 Space Sciences Inc Apparatus for film deposition
US3914573A (en) * 1971-05-17 1975-10-21 Geotel Inc Coating heat softened particles by projection in a plasma stream of Mach 1 to Mach 3 velocity
US4006340A (en) * 1973-09-28 1977-02-01 Compagnie Industrielle Des Telecommunications Cit-Alcatel Device for the rapid depositing of oxides in thin layers which adhere well to plastic supports
US4199104A (en) * 1976-01-23 1980-04-22 Plasmainvent Ag Plasma spraying apparatus
US4200264A (en) * 1976-08-16 1980-04-29 Fumio Hori Apparatus for obtaining Mg and Ca through carbon reduction
FR2443137A1 (en) * 1978-11-30 1980-06-27 Labo Electronique Physique Mfr. technique for epitaxial layers of semiconductor material - includes using homogenising chamber for carrier gas and deposited material to improve uniformity of deposition
US4231518A (en) * 1977-04-19 1980-11-04 Zverev Anatoly I Apparatus for explosive application of coatings
US4275287A (en) * 1978-09-28 1981-06-23 Daidoto Kushuko Kabushikaisha Plasma torch and a method of producing a plasma
US4297971A (en) * 1977-09-23 1981-11-03 Ppg Industries, Inc. Apparatus for vaporizing solid coating reactants
EP0064288A1 (en) * 1981-05-04 1982-11-10 Optical Coating Laboratory, Inc. Method and apparatus for the production and utilization of activated molecular beams
JPS5858276A (en) * 1981-09-30 1983-04-06 Ulvac Corp Evaporating device with nozzle
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4540121A (en) * 1981-07-28 1985-09-10 Browning James A Highly concentrated supersonic material flame spray method and apparatus
US4603810A (en) * 1983-03-11 1986-08-05 Arbed S.A. Method and apparatus for the acceleration of solid particles entrained in a carrier gas

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3288696A (en) * 1963-03-12 1966-11-29 Ashland Oil Inc Production of carbon black
US3344051A (en) * 1964-12-07 1967-09-26 Continental Carbon Co Method for the production of carbon black in a high intensity arc
FR1467158A (en) * 1965-12-14 1967-01-27 Siderurgie Fse Inst Rech Gas flow regulator
GB1116495A (en) * 1965-12-16 1968-06-06 Houghton Szego Lab Ltd Low friction reversible worm gear
GB1342994A (en) * 1972-07-24 1974-01-10 Clarke Chapman John Thompson L Equalising flow in pipes
US4077761A (en) * 1976-08-04 1978-03-07 Sid Richardson Carbon & Gasoline Co. Carbon black reactor with axial flow burner
GB2007388A (en) * 1977-10-14 1979-05-16 Northern Eng Ind Proportioning flow in pipes
FR2579486B1 (en) * 1985-03-26 1989-05-26 Canon Kk METHOD FOR ADJUSTING THE SPEED OF FINE PARTICLES
CA1272662A (en) * 1985-03-26 1990-08-14 Canon Kabushiki Kaisha Apparatus and process for controlling flow of fine particles
FR2579487B1 (en) * 1985-03-26 1989-05-12 Canon Kk APPARATUS FOR CONTROLLING THE FLOW OF FINE PARTICLES
FR2579488B1 (en) * 1985-03-26 1989-05-19 Canon Kk METHOD FOR ADJUSTING THE DENSITY OF FINE PARTICLES

Patent Citations (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB222209A (en) * 1923-06-27 1924-09-29 John Ernest Mortimer Improvements relating to the regulation of the flow of fluids, and means therefor
GB415446A (en) * 1931-11-25 1934-08-27 Daimler Benz Ag Method of and means for stabilising the flow of gas in pipes connected to reciprocating piston machines
US2175160A (en) * 1935-07-02 1939-10-03 Linde Air Prod Co Nozzle for cutting blowpipes
GB721364A (en) * 1951-06-29 1955-01-05 Conservatoire Nat Des Arts & M Variable section nozzle neck
US3003939A (en) * 1955-08-31 1961-10-10 Lord Mfg Co Method and apparatus for producing and enhancing chemical reaction in flowable reactant material
US3005762A (en) * 1958-01-20 1961-10-24 Aero Chem Res Lab Inc Electric discharge jet stream
US3010009A (en) * 1958-09-29 1961-11-21 Plasmadyne Corp Method and apparatus for uniting materials in a controlled medium
US2919370A (en) * 1958-10-28 1959-12-29 Plasmadyne Corp Electrodeless plasma torch and method
US3280018A (en) * 1960-08-01 1966-10-18 Siderurgie Fse Inst Rech Method for chemically reacting flowing gases
US3075065A (en) * 1960-10-04 1963-01-22 Adriano C Ducati Hyperthermal tunnel apparatus and electrical plasma-jet torch incorporated therein
GB1092534A (en) * 1964-05-06 1967-11-29 Nuclear Power Plant Co Ltd Fluid control means
US3309873A (en) * 1964-08-31 1967-03-21 Electro Optical Systems Inc Plasma accelerator using hall currents
GB1057120A (en) * 1964-12-09 1967-02-01 Siemens Ag An arrangement for setting and keeping constant the mass flow of gases
US3507294A (en) * 1966-12-14 1970-04-21 Philco Ford Corp Fluid flow control apparatus
US3556409A (en) * 1967-11-30 1971-01-19 Aga Ab Fluid control device
GB1155495A (en) * 1968-01-31 1969-06-18 Congost Luis Tennis Toy for Playing on a Table
US3670400A (en) * 1969-05-09 1972-06-20 Nat Res Dev Process and apparatus for fabricating a hot worked metal layer from atomized metal particles
US3904505A (en) * 1970-03-20 1975-09-09 Space Sciences Inc Apparatus for film deposition
GB1336253A (en) * 1971-03-11 1973-11-07 Gaz De France Pressure regulating and reducing gas-flow meter for industrial installations
US3914573A (en) * 1971-05-17 1975-10-21 Geotel Inc Coating heat softened particles by projection in a plasma stream of Mach 1 to Mach 3 velocity
US3801346A (en) * 1971-11-15 1974-04-02 Zachrey H Co Method for applying particulate coating material to a work piece
US3839618A (en) * 1972-01-03 1974-10-01 Geotel Inc Method and apparatus for effecting high-energy dynamic coating of substrates
US4006340A (en) * 1973-09-28 1977-02-01 Compagnie Industrielle Des Telecommunications Cit-Alcatel Device for the rapid depositing of oxides in thin layers which adhere well to plastic supports
US4199104A (en) * 1976-01-23 1980-04-22 Plasmainvent Ag Plasma spraying apparatus
US4200264A (en) * 1976-08-16 1980-04-29 Fumio Hori Apparatus for obtaining Mg and Ca through carbon reduction
US4231518A (en) * 1977-04-19 1980-11-04 Zverev Anatoly I Apparatus for explosive application of coatings
US4297971A (en) * 1977-09-23 1981-11-03 Ppg Industries, Inc. Apparatus for vaporizing solid coating reactants
US4275287A (en) * 1978-09-28 1981-06-23 Daidoto Kushuko Kabushikaisha Plasma torch and a method of producing a plasma
FR2443137A1 (en) * 1978-11-30 1980-06-27 Labo Electronique Physique Mfr. technique for epitaxial layers of semiconductor material - includes using homogenising chamber for carrier gas and deposited material to improve uniformity of deposition
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
EP0064288A1 (en) * 1981-05-04 1982-11-10 Optical Coating Laboratory, Inc. Method and apparatus for the production and utilization of activated molecular beams
US4540121A (en) * 1981-07-28 1985-09-10 Browning James A Highly concentrated supersonic material flame spray method and apparatus
JPS5858276A (en) * 1981-09-30 1983-04-06 Ulvac Corp Evaporating device with nozzle
US4603810A (en) * 1983-03-11 1986-08-05 Arbed S.A. Method and apparatus for the acceleration of solid particles entrained in a carrier gas

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
English equivalent abstract with drawing figure for Japanese application (KOKAI) 58 58276 published 4 6 83. *
English equivalent abstract with drawing figure for Japanese application (KOKAI) 58-58276 published 4-6-83.
English equivalent abstract with drawing figure for Japanese application (KOKAI) 59 56504 published 4 2 84. *
English equivalent abstract with drawing figure for Japanese application (KOKAI) 59-56504 published 4-2-84.
Landau, L. D., Litschutz, E. M., Lehrbuch der Theoretischen Physik, Hydrodynamik, vol. V1, Berlin, Akademie Verlag, 1981, pp. 403 408. *
Landau, L. D., Litschutz, E. M., Lehrbuch der Theoretischen Physik, Hydrodynamik, vol. V1, Berlin, Akademie-Verlag, 1981, pp. 403-408.
Spurk, J. H.; Vorlesung Str mungslehre II, Darmstadt, Technical University Darmstadt, 1974, pp. 0 6 to 0 9 and 2 154 to 2 175. *
Spurk, J. H.; Vorlesung Stromungslehre II, Darmstadt, Technical University Darmstadt, 1974, pp. 0-6 to 0-9 and 2-154 to 2-175.

Cited By (122)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US6204197B1 (en) 1984-02-15 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
US5904567A (en) * 1984-11-26 1999-05-18 Semiconductor Energy Laboratory Co., Ltd. Layer member forming method
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US5132512A (en) * 1988-06-07 1992-07-21 Hypertherm, Inc. Arc torch nozzle shield for plasma
US5356672A (en) * 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
US5256205A (en) * 1990-05-09 1993-10-26 Jet Process Corporation Microwave plasma assisted supersonic gas jet deposition of thin film materials
US5079403A (en) * 1990-10-22 1992-01-07 W. A. Whitney Corp. Nozzle for plasma arc torch
US5173336A (en) * 1991-01-22 1992-12-22 Santa Barbara Research Center Metal organic chemical vapor deposition (MOCVD) reactor with recirculation suppressing flow guide
US5239161A (en) * 1991-03-26 1993-08-24 Agence Spatiale Europeenne Plasma flux spraying method of treating the surface of a substrate, for example, and apparatus for implementing the method
US5134963A (en) * 1991-10-28 1992-08-04 International Business Machines Corporation LPCVD reactor for high efficiency, high uniformity deposition
US5445324A (en) * 1993-01-27 1995-08-29 The United States Of America As Represented By The United States Department Of Energy Pressurized feed-injection spray-forming apparatus
US5730806A (en) * 1993-08-30 1998-03-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Gas-liquid supersonic cleaning and cleaning verification spray system
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
USRE37853E1 (en) 1995-03-14 2002-09-24 Betchel Bwxt Idaho, Llc Fast quench reactor and method
US5749937A (en) * 1995-03-14 1998-05-12 Lockheed Idaho Technologies Company Fast quench reactor and method
US20040208805A1 (en) * 1995-03-14 2004-10-21 Fincke James R. Thermal synthesis apparatus
US7576296B2 (en) 1995-03-14 2009-08-18 Battelle Energy Alliance, Llc Thermal synthesis apparatus
US6821500B2 (en) 1995-03-14 2004-11-23 Bechtel Bwxt Idaho, Llc Thermal synthesis apparatus and process
US5762009A (en) * 1995-06-07 1998-06-09 Alliant Techsystems, Inc. Plasma energy recycle and conversion (PERC) reactor and process
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
US6010748A (en) * 1996-03-22 2000-01-04 Advanced Technology Materials, Inc. Method of delivering source reagent vapor mixtures for chemical vapor deposition using interiorly partitioned injector
US6446503B1 (en) * 1997-12-15 2002-09-10 Tokyo Gas Co., Ltd. Flow velocity measuring apparatus and methods using sensors for measuring larger and smaller flow quantities
US6498317B2 (en) 1998-10-23 2002-12-24 Innerlogic, Inc. Process for operating a plasma arc torch
US6163009A (en) * 1998-10-23 2000-12-19 Innerlogic, Inc. Process for operating a plasma arc torch
US6677551B2 (en) 1998-10-23 2004-01-13 Innerlogic, Inc. Process for operating a plasma arc torch
US6245390B1 (en) * 1999-09-10 2001-06-12 Viatcheslav Baranovski High-velocity thermal spray apparatus and method of forming materials
US20020151604A1 (en) * 1999-12-21 2002-10-17 Detering Brent A. Hydrogen and elemental carbon production from natural gas and other hydrocarbons
WO2001046067A1 (en) * 1999-12-21 2001-06-28 Bechtel Bwxt Idaho, Llc Hydrogen and elemental carbon production from natural gas and other hydrocarbons
US7097675B2 (en) 1999-12-21 2006-08-29 Battelle Energy Alliance, Llc Fast-quench reactor for hydrogen and elemental carbon production from natural gas and other hydrocarbons
US6326583B1 (en) 2000-03-31 2001-12-04 Innerlogic, Inc. Gas control system for a plasma arc torch
US6302142B1 (en) * 2000-06-01 2001-10-16 Trw Inc. Supersonic gas flow device incorporating a compact supersonic diffuser
US6701942B2 (en) * 2001-03-28 2004-03-09 Samsung Electronics Co., Ltd. Method of and apparatus for removing contaminants from surface of a substrate
US20040144401A1 (en) * 2001-03-28 2004-07-29 Lee Moon-Hee Method of and apparatus for removing contaminants from surface of a substrate
US7141123B2 (en) 2001-03-28 2006-11-28 Samsung Electronics Co., Ltd. Method of and apparatus for removing contaminants from surface of a substrate
US20050067393A1 (en) * 2001-08-22 2005-03-31 Matile Olivier Method and installation for laser beam cutting using a multiple-focus objective and a convergent/divergent nozzle
US20030109092A1 (en) * 2001-10-25 2003-06-12 Won-Kook Choi Surface smoothing device and method thereof
US11692268B2 (en) * 2004-04-12 2023-07-04 Applied Materials, Inc. Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
US20140230730A1 (en) * 2004-04-12 2014-08-21 Applied Materials, Inc. Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
US7354561B2 (en) 2004-11-17 2008-04-08 Battelle Energy Alliance, Llc Chemical reactor and method for chemically converting a first material into a second material
US20060103318A1 (en) * 2004-11-17 2006-05-18 Bechtel Bwxt Idaho, Llc Chemical reactor and method for chemically converting a first material into a second material
US8287814B2 (en) 2004-11-17 2012-10-16 Battelle Energy Alliance, Llc Chemical reactor for converting a first material into a second material
US20110236272A1 (en) * 2004-11-17 2011-09-29 Kong Peter C Chemical reactor for converting a first material into a second material
US20070138147A1 (en) * 2005-12-21 2007-06-21 Sulzer Metco (Us), Inc. Hybrid plasma-cold spray method and apparatus
US7582846B2 (en) * 2005-12-21 2009-09-01 Sulzer Metco (Us), Inc. Hybrid plasma-cold spray method and apparatus
AU2006252131B2 (en) * 2005-12-21 2011-09-29 Sulzer Metco (Us) Inc Hybrid plasma-cold spray method and apparatus
US20080131587A1 (en) * 2006-11-30 2008-06-05 Boroson Michael L Depositing organic material onto an oled substrate
US20100304045A1 (en) * 2007-09-11 2010-12-02 Michael Bisges Method of and apparatus for treating or coating a surface
US20090151322A1 (en) * 2007-12-18 2009-06-18 Perriquest Defense Research Enterprises Llc Plasma Assisted Combustion Device
US8461051B2 (en) 2008-08-18 2013-06-11 Iwatani Corporation Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component
US20110147896A1 (en) * 2008-08-18 2011-06-23 Iwatani Corporation Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component
KR101223945B1 (en) * 2008-08-18 2013-01-21 고쿠리츠 다이가쿠 호진 교토 다이가쿠 Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component
CN102124544B (en) * 2008-08-18 2013-11-13 岩谷产业株式会社 Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component
US8680460B2 (en) * 2008-12-30 2014-03-25 Agilent Technologies, Inc. Converging-diverging supersonic shock disruptor for fluid nebulization and drop fragmentation
US20100163719A1 (en) * 2008-12-30 2010-07-01 Agilent Technologies, Inc. Converging-diverging supersonic shock disruptor for fluid nebulization and drop fragmentation
US10941481B2 (en) 2009-03-25 2021-03-09 The Regents Of The University Of Michigan Nozzle geometry for organic vapor jet printing
US10480056B2 (en) * 2009-03-25 2019-11-19 The Regents Of The University Of Michigan Nozzle geometry for organic vapor jet printing
US8931431B2 (en) * 2009-03-25 2015-01-13 The Regents Of The University Of Michigan Nozzle geometry for organic vapor jet printing
US20100247766A1 (en) * 2009-03-25 2010-09-30 University Of Michigan Nozzle geometry for organic vapor jet printing
US20100270142A1 (en) * 2009-04-23 2010-10-28 Battelle Energy Alliance, Llc Combustion flame plasma hybrid reactor systems, chemical reactant sources and related methods
US8591821B2 (en) 2009-04-23 2013-11-26 Battelle Energy Alliance, Llc Combustion flame-plasma hybrid reactor systems, and chemical reactant sources
US20110084000A1 (en) * 2009-10-14 2011-04-14 Marathon Oil Canada Corporation Systems and methods for processing nozzle reactor pitch
US20110091646A1 (en) * 2009-10-20 2011-04-21 Muataz Aliatieh Orifice chemical vapor deposition reactor
US9074613B2 (en) 2010-01-27 2015-07-07 Centre National de la Recherche Scientifique—CNRS Method and device for adjusting the mass flow rate of a gas stream
WO2011092429A1 (en) * 2010-01-27 2011-08-04 Centre National De La Recherche Scientifique - Cnrs Method and device for adjusting the mass flow rate of a gas stream
FR2955628A1 (en) * 2010-01-27 2011-07-29 Centre Nat Rech Scient METHOD AND DEVICE FOR MODULATING THE MASS FLOW OF A GAS FLOW
US20110180454A1 (en) * 2010-01-28 2011-07-28 Marathon Oil Canada Corporation Methods for preparing solid hydrocarbons for cracking
US10815440B2 (en) 2010-11-05 2020-10-27 Thermochem Recovery International, Inc. Systems and methods for producing syngas from a solid carbon-containing substance using a reactor having hollow engineered particles
US9365463B1 (en) 2011-06-13 2016-06-14 Darrel Barnette Rotating and oscillating breaching device with reactive material
US8636958B2 (en) * 2011-09-07 2014-01-28 Marathon Oil Canada Corporation Nozzle reactor and method of use
US10214418B2 (en) 2011-09-27 2019-02-26 Thermochem Recovery International, Inc. Method for converting biomass into fischer-tropsch products with carbon dioxide recycling
US11760631B2 (en) 2011-09-27 2023-09-19 Thermochem Recovery International, Inc. Method of producing a cooled syngas of improved quality
US11186483B2 (en) 2011-09-27 2021-11-30 Thermochem Recovery International, Inc. Method of producing sulfur-depleted syngas
US10280081B2 (en) 2011-09-27 2019-05-07 Thermochem Recovery International, Inc. Unconditioned syngas composition and method of cleaning up same for fischer-tropsch processing
US10800655B2 (en) 2011-09-27 2020-10-13 Thermochem Recovery International, Inc. Conditioned syngas composition, method of making same and method of processing same to produce fuels and/or fischer-tropsch products
JP2015522397A (en) * 2012-04-27 2015-08-06 リアクティブ・メタル・パーティクルズ・アーエスReactive Metal Particles As Apparatus and method for producing particles
US9949356B2 (en) 2012-07-11 2018-04-17 Lincoln Global, Inc. Electrode for a plasma arc cutting torch
WO2014070419A3 (en) * 2012-10-31 2014-11-06 Physical Shockwave Industrial Applications, Llc Process and apparatus for supersonic collision shockwave reaction mechanism making chemical compounds
US9254472B2 (en) 2012-10-31 2016-02-09 Physical Shockwave Industrial Applications, Llc Process and apparatus for supersonic collision shockwave reaction mechanism for making chemical compounds
WO2015031447A1 (en) * 2013-08-27 2015-03-05 The Regents Of The University Of Michigan Converging/diverging magnetic nozzle
US11365016B2 (en) 2013-08-27 2022-06-21 The Regents Of The University Of Michigan Electrodeless plasma thruster
US11325727B2 (en) 2013-08-27 2022-05-10 The Regents Of The University Of Michigan Converging/diverging magnetic nozzle
US9560733B2 (en) * 2014-02-24 2017-01-31 Lincoln Global, Inc. Nozzle throat for thermal processing and torch equipment
US20150245459A1 (en) * 2014-02-24 2015-08-27 Lincoln Global, Inc. Nozzle throat for thermal processing and torch equipment
WO2016018911A1 (en) * 2014-07-28 2016-02-04 Barnette Darrel Rotating and oscillating breaching device with reactive material
US20160145741A1 (en) * 2014-10-30 2016-05-26 Centro de Investigación en Materiales Avanzados, S.C. Injection nozzle for aerosols and their method of use to deposit different coatings via vapor chemical deposition assisted by aerosol
US11932939B2 (en) 2015-04-22 2024-03-19 Applied Materials, Inc. Lids and lid assembly kits for atomic layer deposition chambers
US11384432B2 (en) * 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US20170048961A1 (en) * 2015-08-12 2017-02-16 Thermacut, S.R.O. Plasma Arc Torch Nozzle with Variably-Curved Orifice Inlet Profile
US10687411B2 (en) * 2015-08-12 2020-06-16 Thermacut, K.S. Plasma arc torch nozzle with variably-curved orifice inlet profile
US11242988B2 (en) 2016-02-16 2022-02-08 Thermochem Recovery International, Inc. Two-stage energy-integrated product gas generation system and method
US10222060B2 (en) 2016-02-16 2019-03-05 Thermochem Recovery International, Inc. Two-stage energy-integrated product gas generation system and method
US20180008941A1 (en) * 2016-03-23 2018-01-11 Alfa Laval Corporate Ab Apparatus for dispersing particles in a liquid
US10857507B2 (en) * 2016-03-23 2020-12-08 Alfa Laval Corporate Ab Apparatus for dispersing particles in a liquid
US10286431B1 (en) 2016-03-25 2019-05-14 Thermochem Recovery International, Inc. Three-stage energy-integrated product gas generation method
US10766059B2 (en) 2016-03-25 2020-09-08 Thermochem Recovery International, Inc. System and method for recovering inert feedstock contaminants from municipal solid waste during gasification
US10946423B2 (en) 2016-03-25 2021-03-16 Thermochem Recovery International, Inc. Particulate classification vessel having gas distributor valve for recovering contaminants from bed material
US10287519B2 (en) 2016-03-25 2019-05-14 Thermochem Recovery International, Inc. Three-stage energy-integrated product gas generation system
US11634650B2 (en) 2016-08-30 2023-04-25 Thermochem Recovery International, Inc. Method of producing liquid fuel from carbonaceous feedstock through gasification and recycling of downstream products
US11370982B2 (en) 2016-08-30 2022-06-28 Thermochem Recovery International, Inc. Method of producing liquid fuel from carbonaceous feedstock through gasification and recycling of downstream products
EP3346808A1 (en) * 2017-01-06 2018-07-11 INP Greifswald Leibniz-institut Fuer Plasmaforschung Und Technologie E. V. Planar device and method for generating a plasma or reactive species
US11380557B2 (en) * 2017-06-05 2022-07-05 Applied Materials, Inc. Apparatus and method for gas delivery in semiconductor process chambers
US9920926B1 (en) 2017-07-10 2018-03-20 Thermochem Recovery International, Inc. Pulse combustion heat exchanger system and method
US10215401B2 (en) 2017-07-10 2019-02-26 Thermochem Recovery International, Inc. Pulse combustion heat exchanger system and method
US10099200B1 (en) 2017-10-24 2018-10-16 Thermochem Recovery International, Inc. Liquid fuel production system having parallel product gas generation
US10350574B2 (en) 2017-10-24 2019-07-16 Thermochem Recovery International, Inc. Method for producing a product gas having component gas ratio relationships
US20190368033A1 (en) * 2018-06-05 2019-12-05 United Technologies Corporation Selective vapor deposition process for additive manufacturing
US11732355B2 (en) * 2018-12-20 2023-08-22 Applied Materials, Inc. Method and apparatus for supplying improved gas flow to a processing volume of a processing chamber
US11905978B2 (en) 2019-04-08 2024-02-20 Norma Germany Gmbh Jet pump
RU2789412C1 (en) * 2019-06-25 2023-02-02 Пикосан Ой Apparatus for plasma processing of substrates
US20200411294A1 (en) * 2019-06-25 2020-12-31 Picosun Oy Plasma in a substrate processing apparatus
WO2020260743A1 (en) * 2019-06-25 2020-12-30 Picosun Oy Plasma in a substrate processing apparatus
US20210207270A1 (en) * 2020-01-08 2021-07-08 Asm Ip Holding B.V. Injector
US11784026B2 (en) * 2020-01-21 2023-10-10 Samsung Electronics Co., Ltd. Substrate processing apparatus, material layer deposition apparatus, and atmospheric pressure chemical vapor deposition apparatus
US20210222300A1 (en) * 2020-01-21 2021-07-22 Samsung Electronics Co., Ltd. Substrate processing apparatus, material layer deposition apparatus, and atmospheric pressure chemical vapor deposition apparatus
US11555157B2 (en) 2020-03-10 2023-01-17 Thermochem Recovery International, Inc. System and method for liquid fuel production from carbonaceous materials using recycled conditioned syngas
US20220020564A1 (en) * 2020-07-14 2022-01-20 Ap Plasma Corporation Plasma generating device
US11466223B2 (en) 2020-09-04 2022-10-11 Thermochem Recovery International, Inc. Two-stage syngas production with separate char and product gas inputs into the second stage
US11760949B2 (en) 2020-09-04 2023-09-19 Thermochem Recovery International, Inc. Two-stage syngas production with separate char and product gas inputs into the second stage

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DE3610295C2 (en) 1996-03-28
DE3610295A1 (en) 1986-11-13

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