US4886728A - Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates - Google Patents
Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates Download PDFInfo
- Publication number
- US4886728A US4886728A US07/141,128 US14112888A US4886728A US 4886728 A US4886728 A US 4886728A US 14112888 A US14112888 A US 14112888A US 4886728 A US4886728 A US 4886728A
- Authority
- US
- United States
- Prior art keywords
- photoresist
- substrate
- wafer
- edge
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Abstract
Description
TABLE I __________________________________________________________________________ Optimum Solvent Mixture Speed Experiment (volume/volume) (RPM) Observations __________________________________________________________________________ 1 100% EL 250 1.5 mm minimum margin between photoresist coating edge and edge of wafer achievable with clean removal; significant margin non-uniformity in both curved and flat regions of wafer; microscopic analysis of photoresist coating edge showed smooth edge. 2 90% EL/10% MEK 250 1.5 mm minimum margin between photoresist coating edge and edge of wafer achievable with clean removal; margin uniformity better than Experiment 1 yet still significant margin non-uniformity in both curved and flat regions; microscopic analysis of photoresist coating edge showed smooth edge. 3 80% EL/20% MEK 300 1.25 mm minimum margin achievable with clean removal; significant margin non-uniformity, especially in flat region; resist edge was smooth. 4 70% EL/30% MEK 350 1.25 mm minimum margin achievable with clean removal; margin uniformity better than 80% EL/20% MEK but still significant non-uniformity in wafer flat; resist edge was smooth. 5 60% EL/40% MEK 480 1.0 mm minimum margin achievable with clean removal, good margin uniformity in both curved and flat regions except for slight non-uniformity in flat; resist edge was smooth. 6 50% EL/50% MEK 550 0.75 mm minimum margin achievable with clean removal; good margin uniformity in both curved and flat regions; smooth resist edge. 7 25% EL/75% MEK 690 0.75 mm minimum margin achievable with clean removal; good margin uniformity in both curved and flat regions; resist edges showed slightly rough edge in microscopic analysis. 8 100% MEK 1000 0.75 mm minimum margin achievable with clean removal; good margin uniformity in both curved and flat regions; resist edges were rough. __________________________________________________________________________ EL = Ethyl Lactate MEK = Methyl Ethyl Ketone
______________________________________ Time Spin Speed Acceleration Event Operation (sec.) (RPM) (RPM/sec.) ______________________________________ 1 Spin 2.0 Variable.sup. ○1 10,000 2 Dispense 10.0 Variable.sup. ○1 10,000 3 Spin 2.0 Variable.sup. ○1 10,000 4 Dry Spin 10.0 3000 50,000 5 Spin 2.0 0 20,000 ______________________________________ .sup. ○1 See Table 1 for specific Dispense Spin Speeds Spin Speeds for Events Nos. 1, 2 and 3 are the same.
______________________________________ DISPENSE AMOUNT 12.5 ml DISPENSE PRESSURE 50 oz./in.sup.2 (3.13 psi) METERING VALVE SETTING 2.25 NOZZLE PLACEMENT fixed 10 mm from wafer edge ______________________________________
TABLE II ______________________________________ Ethyl 50% EL/MEK Lactate EGMEA Acetone ______________________________________ Dispense Spin 500 250 200 350 Speed (rpm) Dispense Time 10.0 10.0 10.0 10.0 (sec.) Dispense Amount 12.5 12.5 12.5 12.5 (ml) Dispense Pressure 50 60 45 32 (oz./in..sup.2) Metering Valve 2.25 2.10 2.35 1.90 Setting Dispense Nozzle 0.064 0.064 0.064 0.064 Size (inches) Dry Spin Speed 3,000 3,000 3,000 3,000 (rpm) Dry Ramp Rate 50,000 50,000 50,000 50,000 (rpm/sec.) Dry Time 10.0 10.0 10.0 10.0 (sec.) ______________________________________
______________________________________ RESIST FILM THICKNESS AFTER EDGE BEAD REMOVAL Edge Bead Removal Resist Edge Thickness Solvent SBFT (μ) Thickness (μ) Change (μ) ______________________________________ 50% EL/50% MEK 1.13 1.22 0.09 Ethyl Lactate 1.35 1.75 0.40 EGMEA 1.25 1.67 0.42 Acetone 1.27 2.45 1.18 ______________________________________ SBFT = softbaked film thickness EGMEA = ethylene glycol monoethyl ether acetate
TABLE III ______________________________________ Developed Image Dimensions (μ) Solvent Standard Exposure Mean Dev. ______________________________________ Yes 2.03 0.02 No 2.01 0.02 ______________________________________
Claims (11)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/141,128 US4886728A (en) | 1988-01-06 | 1988-01-06 | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
DE68921878T DE68921878T2 (en) | 1988-01-06 | 1989-01-04 | Use of certain mixtures of ethyl lactate and methyl ethyl ketone to remove unwanted edge material (e.g. edge beads) from photoresist coated substrates. |
EP89901795A EP0394354B1 (en) | 1988-01-06 | 1989-01-04 | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
PCT/US1989/000019 WO1989006378A1 (en) | 1988-01-06 | 1989-01-04 | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
KR1019890701656A KR910007210B1 (en) | 1988-01-06 | 1989-01-04 | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material from photoresistcoated substrates |
AU30326/89A AU3032689A (en) | 1988-01-06 | 1989-01-04 | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist coated substrates |
JP1501642A JP2561964B2 (en) | 1988-01-06 | 1989-01-04 | Use of a specific mixture of ethyl lactate and methyl ethyl ketone to remove unwanted peripheral materials (eg, edge beads) from photoresist coated substrates |
US07/386,659 US5151219A (en) | 1988-01-06 | 1989-07-31 | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/141,128 US4886728A (en) | 1988-01-06 | 1988-01-06 | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/386,659 Division US5151219A (en) | 1988-01-06 | 1989-07-31 | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
US4886728A true US4886728A (en) | 1989-12-12 |
Family
ID=22494280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/141,128 Expired - Lifetime US4886728A (en) | 1988-01-06 | 1988-01-06 | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
Country Status (7)
Country | Link |
---|---|
US (1) | US4886728A (en) |
EP (1) | EP0394354B1 (en) |
JP (1) | JP2561964B2 (en) |
KR (1) | KR910007210B1 (en) |
AU (1) | AU3032689A (en) |
DE (1) | DE68921878T2 (en) |
WO (1) | WO1989006378A1 (en) |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5069996A (en) * | 1989-07-24 | 1991-12-03 | Ocg Microelectronic Materials, Inc. | Process for developing selected positive photoresists |
US5209815A (en) * | 1991-06-06 | 1993-05-11 | International Business Machines Corporation | Method for forming patterned films on a substrate |
US5240878A (en) * | 1991-04-26 | 1993-08-31 | International Business Machines Corporation | Method for forming patterned films on a substrate |
US5279926A (en) * | 1992-05-06 | 1994-01-18 | International Business Machines Corporation | Method and apparatus for removing vapor from a pressurized sprayed liquid in the manufacture of semiconductor integrated circuits |
US5637436A (en) * | 1990-05-31 | 1997-06-10 | Hoechst Celanese Corporation | Method for removing photoresist composition from substrate surfaces |
US5814433A (en) * | 1996-05-17 | 1998-09-29 | Clariant Finance (Bvi) Limited | Use of mixtures of ethyl lactate and N-methyl pyrollidone as an edge bead remover for photoresists |
US5849467A (en) * | 1996-01-29 | 1998-12-15 | Tokyo Ohka Kogyo Co., Ltd. | Method for the pre-treatment of a photoresist layer on a substrate surface |
US5952050A (en) * | 1996-02-27 | 1999-09-14 | Micron Technology, Inc. | Chemical dispensing system for semiconductor wafer processing |
US5966635A (en) * | 1997-01-31 | 1999-10-12 | Motorola, Inc. | Method for reducing particles on a substrate using chuck cleaning |
US5985363A (en) * | 1997-03-10 | 1999-11-16 | Vanguard International Semiconductor | Method of providing uniform photoresist coatings for tight control of image dimensions |
US5993547A (en) * | 1997-01-09 | 1999-11-30 | Nec Corporation | Edge rinse mechanism for removing a peripheral portion of a resist film formed on a wafer |
US6001417A (en) * | 1996-09-18 | 1999-12-14 | Kabushiki Kaisha Toshiba | Resist coating method and resist coating apparatus |
US6015467A (en) * | 1996-03-08 | 2000-01-18 | Tokyo Ohka Kogyo Co., Ltd. | Method of removing coating from edge of substrate |
WO2000043836A1 (en) * | 1999-01-21 | 2000-07-27 | Alliedsignal Inc. | Solvent systems for polymeric dielectric materials |
US6114254A (en) * | 1996-10-15 | 2000-09-05 | Micron Technology, Inc. | Method for removing contaminants from a semiconductor wafer |
US6183942B1 (en) | 1999-04-15 | 2001-02-06 | Dongjin Semichem Co., Ltd. | Thinner composition for removing spin-on-glass and photoresist |
US6184156B1 (en) * | 1994-09-16 | 2001-02-06 | Advanced Micro Devices, Inc. | Process and system for flattening secondary edgebeads on resist coated wafers |
US6287477B1 (en) | 1999-10-18 | 2001-09-11 | Honeywell International Inc. | Solvents for processing silsesquioxane and siloxane resins |
KR20020037665A (en) * | 2000-11-14 | 2002-05-22 | 주식회사 동진쎄미켐 | Thinner composition for removing photosensitive resin |
US20030227005A1 (en) * | 2002-02-06 | 2003-12-11 | Arch Specialty Chemicals, Inc. | Semiconductor stress buffer coating edge bead removal compositions and method for their use |
US20050042879A1 (en) * | 2003-08-22 | 2005-02-24 | Zhiping Yin | Masking methods |
US20050255702A1 (en) * | 2004-05-17 | 2005-11-17 | Honeycutt Jeffrey W | Methods of processing a semiconductor substrate |
US20060099131A1 (en) * | 2004-11-03 | 2006-05-11 | Kellogg Brown And Root, Inc. | Maximum reaction rate converter system for exothermic reactions |
US20080050925A1 (en) * | 2006-08-24 | 2008-02-28 | Micron Technology, Inc. | Photoresist processing methods |
US7354631B2 (en) | 2003-11-06 | 2008-04-08 | Micron Technology, Inc. | Chemical vapor deposition apparatus and methods |
US20080092806A1 (en) * | 2006-10-19 | 2008-04-24 | Applied Materials, Inc. | Removing residues from substrate processing components |
US7691559B2 (en) | 2005-06-30 | 2010-04-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography edge bead removal |
KR20140119949A (en) | 2013-03-29 | 2014-10-13 | 동우 화인켐 주식회사 | Thinner composition for improving coating and removing performance of resist |
US20150064625A1 (en) * | 2013-09-02 | 2015-03-05 | Shin-Etsu Chemical Co., Ltd. | Method for producing resist composition |
US20150099216A1 (en) * | 2013-10-04 | 2015-04-09 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing a resist composition |
US9024233B2 (en) | 2011-11-30 | 2015-05-05 | First Solar, Inc. | Side edge cleaning methods and apparatus for thin film photovoltaic devices |
KR20150088350A (en) | 2014-01-23 | 2015-08-03 | 동우 화인켐 주식회사 | Thinner composition for improving coating and removing performance of resist |
US20150286143A1 (en) * | 2014-04-03 | 2015-10-08 | Shin-Etsu Chemical Co., Ltd. | Process for manufacturing resist composition and patterning process |
KR20220109563A (en) | 2021-01-29 | 2022-08-05 | 에스케이하이닉스 주식회사 | Thinner composition and method for processing surface of semiconductor substrate |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5128207A (en) * | 1989-03-08 | 1992-07-07 | Siemens Aktiengesellschaft | Method for producing uniform polymethylmethacrylate layers |
JPH05226241A (en) * | 1992-02-18 | 1993-09-03 | Nec Corp | Manufacture of semiconductor device |
US6485576B1 (en) * | 1996-11-22 | 2002-11-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for removing coating bead at wafer flat edge |
JPH10186680A (en) * | 1996-12-26 | 1998-07-14 | Clariant Internatl Ltd | Ringing solution |
KR100315015B1 (en) * | 1998-06-29 | 2002-10-25 | 주식회사 현대 디스플레이 테크놀로지 | Edge removal device of photoresist |
US6524775B1 (en) * | 2000-10-20 | 2003-02-25 | Clariant Finance (Bvi) Limited | Edge bead remover for thick film photoresists |
JP2005286208A (en) * | 2004-03-30 | 2005-10-13 | Shin Etsu Chem Co Ltd | Stripper and thin film removing method |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4113492A (en) * | 1976-04-08 | 1978-09-12 | Fuji Photo Film Co., Ltd. | Spin coating process |
US4367071A (en) * | 1977-11-28 | 1983-01-04 | Dai Nippon Insatsu Kabushiki Kaisha | Heat transfer printing |
US4510176A (en) * | 1983-09-26 | 1985-04-09 | At&T Bell Laboratories | Removal of coating from periphery of a semiconductor wafer |
US4518678A (en) * | 1983-12-16 | 1985-05-21 | Advanced Micro Devices, Inc. | Selective removal of coating material on a coated substrate |
EP0211667A2 (en) * | 1985-08-07 | 1987-02-25 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition |
US4685975A (en) * | 1982-08-03 | 1987-08-11 | Texas Instruments Incorporated | Method for edge cleaning |
US4732836A (en) * | 1986-05-02 | 1988-03-22 | Hoechst Celanese Corporation | Novel mixed ester O-quinone photosensitizers |
US4732785A (en) * | 1986-09-26 | 1988-03-22 | Motorola, Inc. | Edge bead removal process for spin on films |
EP0273026A2 (en) * | 1986-12-23 | 1988-06-29 | Shipley Company Inc. | Solvents for Photoresist compositions |
JPH05128001A (en) * | 1991-11-07 | 1993-05-25 | Koufu Nippon Denki Kk | Information processor |
-
1988
- 1988-01-06 US US07/141,128 patent/US4886728A/en not_active Expired - Lifetime
-
1989
- 1989-01-04 WO PCT/US1989/000019 patent/WO1989006378A1/en active IP Right Grant
- 1989-01-04 EP EP89901795A patent/EP0394354B1/en not_active Expired - Lifetime
- 1989-01-04 DE DE68921878T patent/DE68921878T2/en not_active Expired - Lifetime
- 1989-01-04 JP JP1501642A patent/JP2561964B2/en not_active Expired - Fee Related
- 1989-01-04 AU AU30326/89A patent/AU3032689A/en not_active Abandoned
- 1989-01-04 KR KR1019890701656A patent/KR910007210B1/en not_active IP Right Cessation
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4113492A (en) * | 1976-04-08 | 1978-09-12 | Fuji Photo Film Co., Ltd. | Spin coating process |
US4367071A (en) * | 1977-11-28 | 1983-01-04 | Dai Nippon Insatsu Kabushiki Kaisha | Heat transfer printing |
US4685975A (en) * | 1982-08-03 | 1987-08-11 | Texas Instruments Incorporated | Method for edge cleaning |
US4510176A (en) * | 1983-09-26 | 1985-04-09 | At&T Bell Laboratories | Removal of coating from periphery of a semiconductor wafer |
US4518678A (en) * | 1983-12-16 | 1985-05-21 | Advanced Micro Devices, Inc. | Selective removal of coating material on a coated substrate |
EP0211667A2 (en) * | 1985-08-07 | 1987-02-25 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition |
US4732836A (en) * | 1986-05-02 | 1988-03-22 | Hoechst Celanese Corporation | Novel mixed ester O-quinone photosensitizers |
US4732785A (en) * | 1986-09-26 | 1988-03-22 | Motorola, Inc. | Edge bead removal process for spin on films |
EP0273026A2 (en) * | 1986-12-23 | 1988-06-29 | Shipley Company Inc. | Solvents for Photoresist compositions |
JPH05128001A (en) * | 1991-11-07 | 1993-05-25 | Koufu Nippon Denki Kk | Information processor |
Cited By (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5069996A (en) * | 1989-07-24 | 1991-12-03 | Ocg Microelectronic Materials, Inc. | Process for developing selected positive photoresists |
US5637436A (en) * | 1990-05-31 | 1997-06-10 | Hoechst Celanese Corporation | Method for removing photoresist composition from substrate surfaces |
US5240878A (en) * | 1991-04-26 | 1993-08-31 | International Business Machines Corporation | Method for forming patterned films on a substrate |
US5209815A (en) * | 1991-06-06 | 1993-05-11 | International Business Machines Corporation | Method for forming patterned films on a substrate |
US5279926A (en) * | 1992-05-06 | 1994-01-18 | International Business Machines Corporation | Method and apparatus for removing vapor from a pressurized sprayed liquid in the manufacture of semiconductor integrated circuits |
US6184156B1 (en) * | 1994-09-16 | 2001-02-06 | Advanced Micro Devices, Inc. | Process and system for flattening secondary edgebeads on resist coated wafers |
US5849467A (en) * | 1996-01-29 | 1998-12-15 | Tokyo Ohka Kogyo Co., Ltd. | Method for the pre-treatment of a photoresist layer on a substrate surface |
US5952050A (en) * | 1996-02-27 | 1999-09-14 | Micron Technology, Inc. | Chemical dispensing system for semiconductor wafer processing |
US7470344B1 (en) | 1996-02-27 | 2008-12-30 | Micron Technology, Inc. | Chemical dispensing system for semiconductor wafer processing |
US6793764B1 (en) | 1996-02-27 | 2004-09-21 | Micron Technology, Inc. | Chemical dispensing system for semiconductor wafer processing |
US6015467A (en) * | 1996-03-08 | 2000-01-18 | Tokyo Ohka Kogyo Co., Ltd. | Method of removing coating from edge of substrate |
US5814433A (en) * | 1996-05-17 | 1998-09-29 | Clariant Finance (Bvi) Limited | Use of mixtures of ethyl lactate and N-methyl pyrollidone as an edge bead remover for photoresists |
US6001417A (en) * | 1996-09-18 | 1999-12-14 | Kabushiki Kaisha Toshiba | Resist coating method and resist coating apparatus |
US6114254A (en) * | 1996-10-15 | 2000-09-05 | Micron Technology, Inc. | Method for removing contaminants from a semiconductor wafer |
US6255228B1 (en) | 1996-10-15 | 2001-07-03 | Micron Technology, Inc. | Method for removing contaminants from a semiconductor wafer |
US6506689B2 (en) | 1996-10-15 | 2003-01-14 | Micron Technology, Inc. | Method for removing contaminants from a semiconductor wafer |
US5993547A (en) * | 1997-01-09 | 1999-11-30 | Nec Corporation | Edge rinse mechanism for removing a peripheral portion of a resist film formed on a wafer |
US5966635A (en) * | 1997-01-31 | 1999-10-12 | Motorola, Inc. | Method for reducing particles on a substrate using chuck cleaning |
US5985363A (en) * | 1997-03-10 | 1999-11-16 | Vanguard International Semiconductor | Method of providing uniform photoresist coatings for tight control of image dimensions |
WO2000043836A1 (en) * | 1999-01-21 | 2000-07-27 | Alliedsignal Inc. | Solvent systems for polymeric dielectric materials |
US6878796B2 (en) | 1999-01-21 | 2005-04-12 | Honeywell International Inc. | Solvent systems for polymeric dielectric materials |
US6413202B1 (en) | 1999-01-21 | 2002-07-02 | Alliedsignal, Inc. | Solvent systems for polymeric dielectric materials |
US6524657B2 (en) | 1999-01-21 | 2003-02-25 | Honeywell International Inc. | Solvent systems for polymeric dielectric materials |
US20030191275A1 (en) * | 1999-01-21 | 2003-10-09 | Oana Leonte | Solvent systems for polymeric dielectric materials |
US6183942B1 (en) | 1999-04-15 | 2001-02-06 | Dongjin Semichem Co., Ltd. | Thinner composition for removing spin-on-glass and photoresist |
US6287477B1 (en) | 1999-10-18 | 2001-09-11 | Honeywell International Inc. | Solvents for processing silsesquioxane and siloxane resins |
KR20020037665A (en) * | 2000-11-14 | 2002-05-22 | 주식회사 동진쎄미켐 | Thinner composition for removing photosensitive resin |
US20040224516A1 (en) * | 2002-02-06 | 2004-11-11 | Arch Specialty Chemicals, Inc. | Semiconductor stress buffer coating edge bead removal compositions and method for their use |
US20030227005A1 (en) * | 2002-02-06 | 2003-12-11 | Arch Specialty Chemicals, Inc. | Semiconductor stress buffer coating edge bead removal compositions and method for their use |
US7335319B2 (en) | 2002-02-06 | 2008-02-26 | Arch Specialty Chemicals, Inc. | Semiconductor stress buffer coating edge bead removal compositions and method for their use |
US20050042879A1 (en) * | 2003-08-22 | 2005-02-24 | Zhiping Yin | Masking methods |
US20060264018A1 (en) * | 2003-08-22 | 2006-11-23 | Zhiping Yin | Masking methods |
US7105431B2 (en) | 2003-08-22 | 2006-09-12 | Micron Technology, Inc. | Masking methods |
US7470606B2 (en) | 2003-08-22 | 2008-12-30 | Micron Technology, Inc. | Masking methods |
US7354631B2 (en) | 2003-11-06 | 2008-04-08 | Micron Technology, Inc. | Chemical vapor deposition apparatus and methods |
US20050255702A1 (en) * | 2004-05-17 | 2005-11-17 | Honeycutt Jeffrey W | Methods of processing a semiconductor substrate |
US7115524B2 (en) | 2004-05-17 | 2006-10-03 | Micron Technology, Inc. | Methods of processing a semiconductor substrate |
US20060258161A1 (en) * | 2004-05-17 | 2006-11-16 | Micron Technology, Inc. | Methods of processing a semiconductor substrate |
US7432212B2 (en) | 2004-05-17 | 2008-10-07 | Micron Technology, Inc. | Methods of processing a semiconductor substrate |
US20060099131A1 (en) * | 2004-11-03 | 2006-05-11 | Kellogg Brown And Root, Inc. | Maximum reaction rate converter system for exothermic reactions |
DE102006029225B4 (en) * | 2005-06-30 | 2011-06-09 | Taiwan Semiconductor Mfg. Co., Ltd. | Edge wall removal in immersion lithography |
US7691559B2 (en) | 2005-06-30 | 2010-04-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography edge bead removal |
US20080050925A1 (en) * | 2006-08-24 | 2008-02-28 | Micron Technology, Inc. | Photoresist processing methods |
US20110159698A2 (en) * | 2006-08-24 | 2011-06-30 | Micron Technology, Inc. | Photoresist Processing Methods |
US7977037B2 (en) * | 2006-08-24 | 2011-07-12 | Micron Technology, Inc. | Photoresist processing methods |
US8283112B2 (en) | 2006-08-24 | 2012-10-09 | Micron Technology, Inc. | Photoresist processing methods |
US8685625B2 (en) | 2006-08-24 | 2014-04-01 | Micron Technology, Inc. | Photoresist processing methods |
US20080092806A1 (en) * | 2006-10-19 | 2008-04-24 | Applied Materials, Inc. | Removing residues from substrate processing components |
US9024233B2 (en) | 2011-11-30 | 2015-05-05 | First Solar, Inc. | Side edge cleaning methods and apparatus for thin film photovoltaic devices |
KR20140119949A (en) | 2013-03-29 | 2014-10-13 | 동우 화인켐 주식회사 | Thinner composition for improving coating and removing performance of resist |
US20150064625A1 (en) * | 2013-09-02 | 2015-03-05 | Shin-Etsu Chemical Co., Ltd. | Method for producing resist composition |
US9207535B2 (en) * | 2013-09-02 | 2015-12-08 | Shin-Etsu Chemical Co., Ltd. | Method for producing resist composition |
US20150099216A1 (en) * | 2013-10-04 | 2015-04-09 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing a resist composition |
US10610906B2 (en) * | 2013-10-04 | 2020-04-07 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing a resist composition |
KR20150088350A (en) | 2014-01-23 | 2015-08-03 | 동우 화인켐 주식회사 | Thinner composition for improving coating and removing performance of resist |
US20150286143A1 (en) * | 2014-04-03 | 2015-10-08 | Shin-Etsu Chemical Co., Ltd. | Process for manufacturing resist composition and patterning process |
US10603696B2 (en) * | 2014-04-03 | 2020-03-31 | Shin-Etsu Chemical Co., Ltd. | Process for manufacturing resist composition and patterning process |
KR20220109563A (en) | 2021-01-29 | 2022-08-05 | 에스케이하이닉스 주식회사 | Thinner composition and method for processing surface of semiconductor substrate |
Also Published As
Publication number | Publication date |
---|---|
WO1989006378A1 (en) | 1989-07-13 |
EP0394354A4 (en) | 1991-01-16 |
JPH03502255A (en) | 1991-05-23 |
EP0394354A1 (en) | 1990-10-31 |
KR910007210B1 (en) | 1991-09-20 |
DE68921878D1 (en) | 1995-04-27 |
JP2561964B2 (en) | 1996-12-11 |
EP0394354B1 (en) | 1995-03-22 |
KR900700920A (en) | 1990-08-17 |
DE68921878T2 (en) | 1995-09-07 |
AU3032689A (en) | 1989-08-01 |
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