US4847111A - Plasma-nitridated self-aligned tungsten system for VLSI interconnections - Google Patents
Plasma-nitridated self-aligned tungsten system for VLSI interconnections Download PDFInfo
- Publication number
- US4847111A US4847111A US07/213,861 US21386188A US4847111A US 4847111 A US4847111 A US 4847111A US 21386188 A US21386188 A US 21386188A US 4847111 A US4847111 A US 4847111A
- Authority
- US
- United States
- Prior art keywords
- tungsten
- layer
- chemically vapor
- vapor depositing
- nitridated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010937 tungsten Substances 0.000 title claims abstract description 37
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 37
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 229920005591 polysilicon Polymers 0.000 claims abstract description 12
- 229910021342 tungsten silicide Inorganic materials 0.000 claims abstract description 12
- -1 tungsten nitride Chemical class 0.000 claims abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 230000001131 transforming effect Effects 0.000 claims description 5
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 238000000137 annealing Methods 0.000 abstract description 10
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 230000008901 benefit Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000012421 spiking Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
- H01L29/41783—Raised source or drain electrodes self aligned with the gate
Abstract
Description
Claims (13)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/213,861 US4847111A (en) | 1988-06-30 | 1988-06-30 | Plasma-nitridated self-aligned tungsten system for VLSI interconnections |
PCT/US1989/001068 WO1990000311A1 (en) | 1988-06-30 | 1989-03-17 | Plasma-nitridated self-aligned tungsten system for vlsi interconnections |
JP1507094A JPH0666289B2 (en) | 1988-06-30 | 1989-03-17 | Nitride plasma self-aligned tungsten system for VLSI interconnection |
EP19890907397 EP0393162A1 (en) | 1988-06-30 | 1989-03-17 | Plasma-nitridated self-aligned tungsten system for vlsi interconnections |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/213,861 US4847111A (en) | 1988-06-30 | 1988-06-30 | Plasma-nitridated self-aligned tungsten system for VLSI interconnections |
Publications (1)
Publication Number | Publication Date |
---|---|
US4847111A true US4847111A (en) | 1989-07-11 |
Family
ID=22796800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/213,861 Expired - Lifetime US4847111A (en) | 1988-06-30 | 1988-06-30 | Plasma-nitridated self-aligned tungsten system for VLSI interconnections |
Country Status (4)
Country | Link |
---|---|
US (1) | US4847111A (en) |
EP (1) | EP0393162A1 (en) |
JP (1) | JPH0666289B2 (en) |
WO (1) | WO1990000311A1 (en) |
Cited By (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5075251A (en) * | 1988-09-09 | 1991-12-24 | L'etat Francais | Tungsten silicide self-aligned formation process |
US5077236A (en) * | 1990-07-02 | 1991-12-31 | Samsung Electronics Co., Ltd. | Method of making a pattern of tungsten interconnection |
EP0490761A1 (en) * | 1990-12-13 | 1992-06-17 | France Telecom | Method of realising an electrically conductive diffusion barrier at the metal/silicon interface of an MOS transistor, and corresponding transistor |
US5180468A (en) * | 1990-07-05 | 1993-01-19 | Samsung Electronics Co., Ltd. | Method for growing a high-melting-point metal film |
US5221853A (en) * | 1989-01-06 | 1993-06-22 | International Business Machines Corporation | MOSFET with a refractory metal film, a silicide film and a nitride film formed on and in contact with a source, drain and gate region |
US5242860A (en) * | 1991-07-24 | 1993-09-07 | Applied Materials, Inc. | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
US5314843A (en) * | 1992-03-27 | 1994-05-24 | Micron Technology, Inc. | Integrated circuit polishing method |
US5318924A (en) * | 1991-10-03 | 1994-06-07 | Hewlett-Packard Company | Nitridation of titanium-tungsten interconnects |
US5510292A (en) * | 1994-03-04 | 1996-04-23 | Fujitsu Limited | Manufacturing method for a semiconductor device having local interconnections |
US5633200A (en) * | 1996-05-24 | 1997-05-27 | Micron Technology, Inc. | Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer |
US5691235A (en) * | 1994-11-30 | 1997-11-25 | Micron Technology, Inc. | Method of depositing tungsten nitride using a source gas comprising silicon |
US5733816A (en) * | 1995-12-13 | 1998-03-31 | Micron Technology, Inc. | Method for depositing a tungsten layer on silicon |
US5888588A (en) * | 1997-03-31 | 1999-03-30 | Motorola, Inc. | Process for forming a semiconductor device |
US5889328A (en) * | 1992-02-26 | 1999-03-30 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
US5962904A (en) * | 1997-09-16 | 1999-10-05 | Micron Technology, Inc. | Gate electrode stack with diffusion barrier |
US6084279A (en) * | 1997-03-31 | 2000-07-04 | Motorola Inc. | Semiconductor device having a metal containing layer overlying a gate dielectric |
US6087257A (en) * | 1996-11-12 | 2000-07-11 | Samsung Electronics Co., Ltd. | Methods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layer |
US6153519A (en) * | 1997-03-31 | 2000-11-28 | Motorola, Inc. | Method of forming a barrier layer |
US6204171B1 (en) | 1996-05-24 | 2001-03-20 | Micron Technology, Inc. | Process for forming a film composed of a nitride of a diffusion barrier material |
US6218288B1 (en) | 1998-05-11 | 2001-04-17 | Micron Technology, Inc. | Multiple step methods for forming conformal layers |
US6281083B1 (en) | 1998-08-21 | 2001-08-28 | Micron Technology, Inc. | Methods of forming field effect transistor gates, and methods of forming integrated circuitry |
US6376370B1 (en) | 2000-01-18 | 2002-04-23 | Micron Technology, Inc. | Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy |
US6420262B1 (en) | 2000-01-18 | 2002-07-16 | Micron Technology, Inc. | Structures and methods to enhance copper metallization |
US6429120B1 (en) * | 2000-01-18 | 2002-08-06 | Micron Technology, Inc. | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
US6614099B2 (en) | 1998-08-04 | 2003-09-02 | Micron Technology, Inc. | Copper metallurgy in integrated circuits |
US20030178674A1 (en) * | 2002-03-22 | 2003-09-25 | Shigeru Fujita | Semiconductor device and its manufacturing method |
US6641867B1 (en) * | 1998-03-31 | 2003-11-04 | Texas Instruments Incorporated | Methods for chemical vapor deposition of tungsten on silicon or dielectric |
US6780758B1 (en) * | 1998-09-03 | 2004-08-24 | Micron Technology, Inc. | Method of establishing electrical contact between a semiconductor substrate and a semiconductor device |
US20040219783A1 (en) * | 2001-07-09 | 2004-11-04 | Micron Technology, Inc. | Copper dual damascene interconnect technology |
US6838376B2 (en) * | 1997-11-05 | 2005-01-04 | Tokyo Electron Limited | Method of forming semiconductor wiring structures |
US6872429B1 (en) * | 1997-06-30 | 2005-03-29 | Applied Materials, Inc. | Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber |
US20050112871A1 (en) * | 2000-05-31 | 2005-05-26 | Micron Technology, Inc. | Multilevel copper interconnect with double passivation |
US20060024959A1 (en) * | 2004-07-30 | 2006-02-02 | Applied Materials, Inc. | Thin tungsten silicide layer deposition and gate metal integration |
US6995470B2 (en) | 2000-05-31 | 2006-02-07 | Micron Technology, Inc. | Multilevel copper interconnects with low-k dielectrics and air gaps |
US7211512B1 (en) | 2000-01-18 | 2007-05-01 | Micron Technology, Inc. | Selective electroless-plated copper metallization |
US7220665B2 (en) | 2003-08-05 | 2007-05-22 | Micron Technology, Inc. | H2 plasma treatment |
US20070131984A1 (en) * | 2005-12-12 | 2007-06-14 | Masayuki Kamei | Semiconductor device and method for fabricating the same |
US7253521B2 (en) | 2000-01-18 | 2007-08-07 | Micron Technology, Inc. | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals |
US20080293247A1 (en) * | 2004-11-29 | 2008-11-27 | Nec Electronics Corporation | Semiconductor device and method of manufacturing the same |
US20160190254A1 (en) * | 2001-09-21 | 2016-06-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Structures Employing Strained Material Layers with Defined Impurity Gradients and Methods for Fabricating Same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4676866A (en) * | 1985-05-01 | 1987-06-30 | Texas Instruments Incorporated | Process to increase tin thickness |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4657628A (en) * | 1985-05-01 | 1987-04-14 | Texas Instruments Incorporated | Process for patterning local interconnects |
DE3788485T2 (en) * | 1986-09-30 | 1994-06-09 | Philips Nv | Process for the production of a planar conductor track by isotropic deposition of conductive material. |
-
1988
- 1988-06-30 US US07/213,861 patent/US4847111A/en not_active Expired - Lifetime
-
1989
- 1989-03-17 EP EP19890907397 patent/EP0393162A1/en not_active Withdrawn
- 1989-03-17 WO PCT/US1989/001068 patent/WO1990000311A1/en not_active Application Discontinuation
- 1989-03-17 JP JP1507094A patent/JPH0666289B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4676866A (en) * | 1985-05-01 | 1987-06-30 | Texas Instruments Incorporated | Process to increase tin thickness |
Cited By (87)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5075251A (en) * | 1988-09-09 | 1991-12-24 | L'etat Francais | Tungsten silicide self-aligned formation process |
US5221853A (en) * | 1989-01-06 | 1993-06-22 | International Business Machines Corporation | MOSFET with a refractory metal film, a silicide film and a nitride film formed on and in contact with a source, drain and gate region |
US5077236A (en) * | 1990-07-02 | 1991-12-31 | Samsung Electronics Co., Ltd. | Method of making a pattern of tungsten interconnection |
US5180468A (en) * | 1990-07-05 | 1993-01-19 | Samsung Electronics Co., Ltd. | Method for growing a high-melting-point metal film |
EP0490761A1 (en) * | 1990-12-13 | 1992-06-17 | France Telecom | Method of realising an electrically conductive diffusion barrier at the metal/silicon interface of an MOS transistor, and corresponding transistor |
FR2670605A1 (en) * | 1990-12-13 | 1992-06-19 | France Etat | METHOD OF MAKING A DIFFUSION BARRIER ELECTRICALLY CONDUCTIVE TO THE METAL / SILICON INTERFACE OF A MOS TRANSISTOR AND CORRESPONDING TRANSISTOR |
US5300455A (en) * | 1990-12-13 | 1994-04-05 | France Telecom | Process for producing an electrically conductive diffusion barrier at the metal/silicon interface of a MOS transistor |
US5521120A (en) * | 1991-07-24 | 1996-05-28 | Applied Materials, Inc. | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
US5242860A (en) * | 1991-07-24 | 1993-09-07 | Applied Materials, Inc. | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
US5360996A (en) * | 1991-07-24 | 1994-11-01 | Applied Materials, Inc. | Titanium nitride/titanium silicide multiple layer barrier with preferential (111) crystallographic orientation on titanium nitride surface |
US5434044A (en) * | 1991-07-24 | 1995-07-18 | Applied Materials, Inc. | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
US5318924A (en) * | 1991-10-03 | 1994-06-07 | Hewlett-Packard Company | Nitridation of titanium-tungsten interconnects |
US5889328A (en) * | 1992-02-26 | 1999-03-30 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
US6147402A (en) * | 1992-02-26 | 2000-11-14 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
US6323554B1 (en) | 1992-02-26 | 2001-11-27 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD |
US5976975A (en) * | 1992-02-26 | 1999-11-02 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
US5314843A (en) * | 1992-03-27 | 1994-05-24 | Micron Technology, Inc. | Integrated circuit polishing method |
US5510292A (en) * | 1994-03-04 | 1996-04-23 | Fujitsu Limited | Manufacturing method for a semiconductor device having local interconnections |
US5691235A (en) * | 1994-11-30 | 1997-11-25 | Micron Technology, Inc. | Method of depositing tungsten nitride using a source gas comprising silicon |
US20020045322A1 (en) * | 1994-11-30 | 2002-04-18 | Micron Technology, Inc. | Method of depositing tungsten nitride using a source gas comprising silicon |
US6472323B1 (en) | 1994-11-30 | 2002-10-29 | Micron Technology, Inc. | Method of depositing tungsten nitride using a source gas comprising silicon |
US6730954B2 (en) | 1994-11-30 | 2004-05-04 | Micron Technology, Inc. | Method of depositing tungsten nitride using a source gas comprising silicon |
US6429086B1 (en) * | 1994-11-30 | 2002-08-06 | Micron Technology, Inc. | Method of depositing tungsten nitride using a source gas comprising silicon |
US5733816A (en) * | 1995-12-13 | 1998-03-31 | Micron Technology, Inc. | Method for depositing a tungsten layer on silicon |
US6479381B2 (en) | 1996-05-24 | 2002-11-12 | Micron Technology, Inc. | Process for forming a diffusion-barrier-material nitride film |
US6204171B1 (en) | 1996-05-24 | 2001-03-20 | Micron Technology, Inc. | Process for forming a film composed of a nitride of a diffusion barrier material |
US6998341B2 (en) | 1996-05-24 | 2006-02-14 | Micron Technology, Inc. | Process for forming a diffusion barrier material nitride film |
US6680246B2 (en) | 1996-05-24 | 2004-01-20 | Micron Technology, Inc. | Process for forming a nitride film |
US20040157429A1 (en) * | 1996-05-24 | 2004-08-12 | Micron Technology, Inc. | Process for forming a diffusion barrier material nitride film |
US5633200A (en) * | 1996-05-24 | 1997-05-27 | Micron Technology, Inc. | Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer |
US6087257A (en) * | 1996-11-12 | 2000-07-11 | Samsung Electronics Co., Ltd. | Methods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layer |
US6153519A (en) * | 1997-03-31 | 2000-11-28 | Motorola, Inc. | Method of forming a barrier layer |
US6376371B1 (en) | 1997-03-31 | 2002-04-23 | Motorola, Inc. | Method of forming a semiconductor device |
US6084279A (en) * | 1997-03-31 | 2000-07-04 | Motorola Inc. | Semiconductor device having a metal containing layer overlying a gate dielectric |
US5888588A (en) * | 1997-03-31 | 1999-03-30 | Motorola, Inc. | Process for forming a semiconductor device |
US6872429B1 (en) * | 1997-06-30 | 2005-03-29 | Applied Materials, Inc. | Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber |
US6096640A (en) * | 1997-09-16 | 2000-08-01 | Micron Technology, Inc. | Method of making a gate electrode stack with a diffusion barrier |
US5962904A (en) * | 1997-09-16 | 1999-10-05 | Micron Technology, Inc. | Gate electrode stack with diffusion barrier |
US6838376B2 (en) * | 1997-11-05 | 2005-01-04 | Tokyo Electron Limited | Method of forming semiconductor wiring structures |
US6641867B1 (en) * | 1998-03-31 | 2003-11-04 | Texas Instruments Incorporated | Methods for chemical vapor deposition of tungsten on silicon or dielectric |
US6281072B1 (en) | 1998-05-11 | 2001-08-28 | Micron Technology, Inc. | Multiple step methods for forming conformal layers |
US6489199B2 (en) | 1998-05-11 | 2002-12-03 | Micron Technology, Inc. | Multiple step methods for forming conformal layers |
US6218288B1 (en) | 1998-05-11 | 2001-04-17 | Micron Technology, Inc. | Multiple step methods for forming conformal layers |
US6614099B2 (en) | 1998-08-04 | 2003-09-02 | Micron Technology, Inc. | Copper metallurgy in integrated circuits |
US6939799B2 (en) | 1998-08-21 | 2005-09-06 | Micron Technology, Inc. | Method of forming a field effect transistor and methods of forming integrated circuitry |
US6882017B2 (en) | 1998-08-21 | 2005-04-19 | Micron Technology, Inc. | Field effect transistors and integrated circuitry |
US6281083B1 (en) | 1998-08-21 | 2001-08-28 | Micron Technology, Inc. | Methods of forming field effect transistor gates, and methods of forming integrated circuitry |
US7256123B2 (en) | 1998-09-03 | 2007-08-14 | Micron Technology, Inc. | Method of forming an interface for a semiconductor device |
US6780758B1 (en) * | 1998-09-03 | 2004-08-24 | Micron Technology, Inc. | Method of establishing electrical contact between a semiconductor substrate and a semiconductor device |
US20040175920A1 (en) * | 1998-09-03 | 2004-09-09 | Derderian Garo J. | Interface and method of forming an interface for a silicon contact |
US7211512B1 (en) | 2000-01-18 | 2007-05-01 | Micron Technology, Inc. | Selective electroless-plated copper metallization |
US7670469B2 (en) | 2000-01-18 | 2010-03-02 | Micron Technology, Inc. | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
US6376370B1 (en) | 2000-01-18 | 2002-04-23 | Micron Technology, Inc. | Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy |
US6756298B2 (en) | 2000-01-18 | 2004-06-29 | Micron Technology, Inc. | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
US8779596B2 (en) | 2000-01-18 | 2014-07-15 | Micron Technology, Inc. | Structures and methods to enhance copper metallization |
US6743716B2 (en) | 2000-01-18 | 2004-06-01 | Micron Technology, Inc. | Structures and methods to enhance copper metallization |
US7745934B2 (en) | 2000-01-18 | 2010-06-29 | Micron Technology, Inc. | Integrated circuit and seed layers |
US7535103B2 (en) | 2000-01-18 | 2009-05-19 | Micron Technology, Inc. | Structures and methods to enhance copper metallization |
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Also Published As
Publication number | Publication date |
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EP0393162A1 (en) | 1990-10-24 |
JPH0666289B2 (en) | 1994-08-24 |
WO1990000311A1 (en) | 1990-01-11 |
JPH03505802A (en) | 1991-12-12 |
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