US4652339A - CCD gate definition process - Google Patents

CCD gate definition process Download PDF

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US4652339A
US4652339A US06/831,908 US83190886A US4652339A US 4652339 A US4652339 A US 4652339A US 83190886 A US83190886 A US 83190886A US 4652339 A US4652339 A US 4652339A
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layer
oxide
polysilicon
thin film
photoresist
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US06/831,908
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Nathan Bluzer
James Halvis
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US Air Force
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US Air Force
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Assigned to UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF AIR FORCE, THE reassignment UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF AIR FORCE, THE ASSIGNMENT OF ASSIGNORS INTEREST. SUBJECT TO LICENSE RECITED. SEE RECORD FOR DETAILS Assignors: WESTINGHOUSE ELECTRIC CORPORATION, BLUZER, NATHAN, HALVIS, JAMES
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Definitions

  • the present invention relates broadly to a process for defining semiconductor gates, and in particular to a CCD gate definition process.
  • the definition of geometrical patterns with fine shapes and gaps in integrated circuits is limited by the defects in the defining layer, e.g., the photoresist or a thin film that is patterned with a photoresist layer.
  • the defects in the photoresist are reproduced in the etched pattern.
  • the defects consist of photoresist regions in which the photoresist does not normally develop when exposed to light. If these regions are located between the conductive lines, electrical shorts occur. Similarly if such defects occur in any contact window areas incomplete contact window openings will occur. While the number of photoresist defects is small, nevertheless in VLSI circuits, the probability is considerable that a defect will occur within a circuit.
  • U.S. Pat. No. 4,352,870 discloses a high resolution two-layer resist composition with a sensitive and thicker resist at the lower layer allowing for the production of lines on the order of 400 ⁇ (angstrom) in width separated by spaces on the order of 400 ⁇ .
  • the Gottfried reference, U.S. Pat. No. 3,506,441 discloses a double photoresist processing method for producing printed circuit substrates having closely spaced, fine line circuitry devoid of pinholes.
  • the present invention utilizes a double masking step in a CCD gate definition process to eliminate the re-entrant oxide by using a thin film layer other than photoresist to define the polysilicon gates used by defining the thin film layer with a double masking process before any of the polysilicon gate layer is etched.
  • FIG. 1 is a section view of a semiconductor substrate before re-definition to eliminate electrical shorts
  • FIG. 2 is a section view illustrating the effects of etching oxidized polysilicon with a mis-aligned photoresist layer
  • FIG. 3 is a section view illustrating the reduction in the inter-electrode capacitance, C, by shaping the oxide over the polysilicon gates,
  • FIG. 4 is a section view illustrating a profiled oxide over a polysilicon gate
  • FIG. 5 is a section view illustrating the gate structure after double masking
  • FIG. 6 is a section view illustrating the process for producing a profiled oxide over polysilicon without re-entrant oxide regions, and,
  • FIG. 7 is a section view illustrating the profiled and tapered oxide layer over the polysilicon layer according to the process of the present invention.
  • FIG. 1 there is shown a section view of a semiconductor substrate before redefinition to eliminate electrical shorts.
  • the base substrate 20 which is silicon shown with a first (oxide 22) and a second (nitride 24) layer deposited thereon.
  • the polysilicon gates 26 which are formed on the nitride layer 24 have an oxide layer 28 over them.
  • the polysilicon gates 26 are arranged to provide narrow gate to gate spacing.
  • the photoresist layers 30 which are redeposited for the process of re-defining the gates 26, are shown misaligned with the gates. In general, the double masking technique is utilized for defining CCD gates.
  • the oxide layer 28 has to be re-etched in order to expose the polysilicon material 26 in the gap (the area between the polysilicon materials 26) regions. Any misalignment between the photoresist layer 30 and the polysilicon gates 26 will produce a polysilicon undercut area after the chemical etch process is completed.
  • This undercut area 40 is shown FIG. 2 and represents the area in the polysilicon layer in which the photoresist layer was misaligned.
  • the dashed areas also known as the undercut area 40, comprises a re-oxidized polysilicon region.
  • the gate nitride layer 22 will also be attacked. Thus, it may be seen that the spacing between the gates will increase and widen, and that the gate widths will decrease and become narrower with the second etch operation.
  • FIG. 2 The problem which is illustrated in FIG. 2 is aggravated if a tapered oxide layer is deposited over the polysilicon gates in an attempt to reduce the inter-electrode capacitance, C.
  • This arrangement is shown in FIG. 3 wherein the oxide layer 28 is tapered.
  • the inter-electrode capacitance, C is formed between the oxide layer 28 and the metal layer 42.
  • FIG. 4 A process for fabricating the tapered oxide over the polysilicon gates is shown in FIG. 4. It may be seen that this process results in the hashed areas 50 which represent oxidized polysilicon. If intra-electrode shorts are detected on the substrate, a double masking process is used. However, the double masking process will result in a severe re-entrant oxide profile which is shown in FIG. 5. The double masking process is subject to defects that lead to open metal lines. This is in fact due to the metal deposition step in the double masking which results in the open lines that is caused by the re-entrant oxide step.
  • FIG. 6 there is shown a section view illustrating the process for producing a profiled oxide over the polysilicon layer without creating re-entrant oxide regions.
  • the base silicon substrate 80 has deposited thereon an oxide layer 82, a nitride alyer 84 and a polysilicon layer 86.
  • the process to eliminate the re-entrant oxide step is possible with a different process.
  • the new technique is based on the following two premises: (a) using a thin film other than photoresist for defining the polysilicon gates; (b) defining the thin film with a double masking process before any of the polysilicon layer is etched.
  • a masking layer which consists of a nitride layer is defined and etched by a double masking step. After the nitride layer is etched the second time and the resist stripped, the oxide layer is etched in a plasma. Next, 80% of the exposed polysilicon layer 86 is etched by using the upper layers for a mask. Before the remaining 20% of polysilicon layer 86 is etched, the layers over the polysilicon which comprise the undensified and densified silox layers, oxide will be etched. An undercut of the silox layers will occur because the etch rate of undensified oxide is faster than the etch rate of densified silox.
  • the remaining nitride layer which remains over the silox layer is removed.
  • the remaining 20% of the polysilicon layer 86 is etched by using the remaining silox layers as an etch mask.
  • FIG. 7 there is shown the result of the etching process wherein a profiled and tapered oxide layer is formed over the polysilicon gates 90 without any re-entrant oxide steps.

Abstract

A CCD gate definition process utilizing a thin film layer in a double masking process to form a first and second oxide layer over the polysilicon gate material to provide a profiled and tapered oxide layer over the gate without any re-entrant oxide steps.

Description

STATEMENT OF GOVERNMENT INTEREST
The invention described herein may be manufactured and used by or for the Government for governmental purposes without the payment of any royalty thereon.
BACKGROUND OF THE INVENTION
The present invention relates broadly to a process for defining semiconductor gates, and in particular to a CCD gate definition process.
In the prior art, the definition of lines with narrow spaces in between is a difficult process. Structures with narrow spaces in between lines occur in VHSIC and CCD type integrated circuits. In view of the great potential for process defects, the narrow spaces, in the order of 0.5 and 3μm, are not properly defined in any of the areas wherein the conductive material is not removed from the spaces. There are two reasons that are attributed for this defect which are reticle problems, and/or defects in the photoresist. The reticle problems which comprise elements such as dust and/or defects in the gap regions, can be eliminated by double-stepping or careful reticle inspection. However, the defects which exist in the photoresist, such as bridging or webbing in between lines requires a process that is tolerant to the photoresist limitations, and also one that eliminates electrical shorts between lines.
The definition of geometrical patterns with fine shapes and gaps in integrated circuits is limited by the defects in the defining layer, e.g., the photoresist or a thin film that is patterned with a photoresist layer. Typically, the defects in the photoresist are reproduced in the etched pattern. In a positive resist process, the defects consist of photoresist regions in which the photoresist does not normally develop when exposed to light. If these regions are located between the conductive lines, electrical shorts occur. Similarly if such defects occur in any contact window areas incomplete contact window openings will occur. While the number of photoresist defects is small, nevertheless in VLSI circuits, the probability is considerable that a defect will will occur within a circuit.
Since the number of photoresist defects is small, a process technique can be employed to completely circumvent the effects of photoresist defects. A double masking process is very effective in reducing the effects of resist defects. The reduction of detects occurs because the probability is very small that a photoresist defect will occur in a the same place for two sucessive masking operations.
The state of the art for processes which define semiconductor structure such as CCD gates is well represented and alleviated to some degree by the prior arts methods and techniques which are contained in the following U.S. Patents:
U.S. Pat. No. 3,506,441 issued to Gottfried on April 14, 1970;
U.S. Pat. No. 3,823,015 issued to Fassett on July 9, 1974;
U.S. Pat. No. 4,352,870 issued to Howard et al on October 5, 1982.
In the prior art, the process of CCD gate definition in order to prevent or eliminate shorts between the gates of a CCD was not addressed to any great extent. U.S. Pat. No. 4,352,870 discloses a high resolution two-layer resist composition with a sensitive and thicker resist at the lower layer allowing for the production of lines on the order of 400 Å (angstrom) in width separated by spaces on the order of 400 Å. The Gottfried reference, U.S. Pat. No. 3,506,441 discloses a double photoresist processing method for producing printed circuit substrates having closely spaced, fine line circuitry devoid of pinholes. Any imperfection formed during the application of an initial layer of photosensitive material upon a circuit substrate, which would result in a pinhole upon exposure of the substrate to an etchant, is corrected by the application of an additional layer of photoresist. The Fassett reference, U.S. Pat. No. 3,823,015 discloses a photo-masking process in which a method of pattern definition employing photoresist masking techniques useful in photoengraving generally and in semiconductor processing specifically wherein defects due to inherent mask flaws are minimized and mask tolerance is improved including the steps of thrice defining and etching a pattern definition layer using separate photo masks or, where possible, by indexing the same photo mask whereby flaws in the masks do not coincide. The present invention is intended to satisfy that need.
SUMMARY OF THE INVENTION
The present invention utilizes a double masking step in a CCD gate definition process to eliminate the re-entrant oxide by using a thin film layer other than photoresist to define the polysilicon gates used by defining the thin film layer with a double masking process before any of the polysilicon gate layer is etched.
It is one object of the present invention, therefore, to provide an improved process for CCD gate definition.
It is another object of the invention to provide an improved CCD gate definition process wherein a profiled oxide layer is produced over a polysilicon layer without re-entrant oxide regions.
It is another object of the invention to provide an improved CCD gate definition process wherein a thin film layer is utilized to define the polysilicon gate layers.
It is another object of the invention to provide an improved CCD gate definition process wherein the thin film layer is defined by a double masking process before any polysilicon layer is etched.
These and other advantages, objects and features of the invention will become more apparent after considering the following description taken in conjunction with the illustrative embodiment in the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a section view of a semiconductor substrate before re-definition to eliminate electrical shorts,
FIG. 2 is a section view illustrating the effects of etching oxidized polysilicon with a mis-aligned photoresist layer,
FIG. 3 is a section view illustrating the reduction in the inter-electrode capacitance, C, by shaping the oxide over the polysilicon gates,
FIG. 4 is a section view illustrating a profiled oxide over a polysilicon gate,
FIG. 5 is a section view illustrating the gate structure after double masking,
FIG. 6 is a section view illustrating the process for producing a profiled oxide over polysilicon without re-entrant oxide regions, and,
FIG. 7 is a section view illustrating the profiled and tapered oxide layer over the polysilicon layer according to the process of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENT
Referring now to FIG. 1, there is shown a section view of a semiconductor substrate before redefinition to eliminate electrical shorts. The base substrate 20 which is silicon shown with a first (oxide 22) and a second (nitride 24) layer deposited thereon. The polysilicon gates 26 which are formed on the nitride layer 24 have an oxide layer 28 over them. The polysilicon gates 26 are arranged to provide narrow gate to gate spacing. The photoresist layers 30 which are redeposited for the process of re-defining the gates 26, are shown misaligned with the gates. In general, the double masking technique is utilized for defining CCD gates. When the oxidation of the polysilicon gates is completed, electrical tests are conducted on the substrates which contain the CCD gates to determine if any electrical shorts exist between the gates. If a substantial number of intra-electrode shorts are found, the polysilicon gates must be redefined for a second time using a second photoresist layer as shown in FIG. 1.
Before the polysilicon material 26 is re-etched the oxide layer 28 has to be re-etched in order to expose the polysilicon material 26 in the gap (the area between the polysilicon materials 26) regions. Any misalignment between the photoresist layer 30 and the polysilicon gates 26 will produce a polysilicon undercut area after the chemical etch process is completed. This undercut area 40 is shown FIG. 2 and represents the area in the polysilicon layer in which the photoresist layer was misaligned. When the oxide layer is re-applied during the gate definition process, the dashed areas, also known as the undercut area 40, comprises a re-oxidized polysilicon region. If, during these steps of the process, plasma etching is used, the gate nitride layer 22 will also be attacked. Thus, it may be seen that the spacing between the gates will increase and widen, and that the gate widths will decrease and become narrower with the second etch operation.
The problem which is illustrated in FIG. 2 is aggravated if a tapered oxide layer is deposited over the polysilicon gates in an attempt to reduce the inter-electrode capacitance, C. This arrangement is shown in FIG. 3 wherein the oxide layer 28 is tapered. The inter-electrode capacitance, C is formed between the oxide layer 28 and the metal layer 42.
A process for fabricating the tapered oxide over the polysilicon gates is shown in FIG. 4. It may be seen that this process results in the hashed areas 50 which represent oxidized polysilicon. If intra-electrode shorts are detected on the substrate, a double masking process is used. However, the double masking process will result in a severe re-entrant oxide profile which is shown in FIG. 5. The double masking process is subject to defects that lead to open metal lines. This is in fact due to the metal deposition step in the double masking which results in the open lines that is caused by the re-entrant oxide step.
Turning now to FIG. 6, there is shown a section view illustrating the process for producing a profiled oxide over the polysilicon layer without creating re-entrant oxide regions. The base silicon substrate 80 has deposited thereon an oxide layer 82, a nitride alyer 84 and a polysilicon layer 86. The process to eliminate the re-entrant oxide step is possible with a different process. The new technique is based on the following two premises: (a) using a thin film other than photoresist for defining the polysilicon gates; (b) defining the thin film with a double masking process before any of the polysilicon layer is etched.
In FIG. 6 a masking layer which consists of a nitride layer is defined and etched by a double masking step. After the nitride layer is etched the second time and the resist stripped, the oxide layer is etched in a plasma. Next, 80% of the exposed polysilicon layer 86 is etched by using the upper layers for a mask. Before the remaining 20% of polysilicon layer 86 is etched, the layers over the polysilicon which comprise the undensified and densified silox layers, oxide will be etched. An undercut of the silox layers will occur because the etch rate of undensified oxide is faster than the etch rate of densified silox. Following the silox layer etch, the remaining nitride layer which remains over the silox layer, is removed. Finally, the remaining 20% of the polysilicon layer 86 is etched by using the remaining silox layers as an etch mask. In FIG. 7 there is shown the result of the etching process wherein a profiled and tapered oxide layer is formed over the polysilicon gates 90 without any re-entrant oxide steps. In conclusion, the process herein described will eliminate the electrical shorts which typically occur between the conductive lines and while it will maintain good step coverage over the polysilicon gates.
Although the invention has been described with reference to a particular embodiment, it will be understood to those skilled in the art that the invention is capable of a variety of alternative embodiments within the spirit and scope of the appended claims.

Claims (3)

What is claimed is:
1. The method of defining CCD gates on a substrate comprising the steps of:
(a) forming a base substrate of silicon material;
(b) providing an oxide layer on said base substate of silicon material;
(c) depositing a nitride layer on said oxide layer;
(d) depositing a polysilicon layer on said nitride layer;
(e) defining the CCD gate regions by using a predetermined thin film layer;
(f) defining said thin film layer with a double masking process before any of said polysilicon layer is etched, said double masking process providing a first and second oxide layer over said polysilicon layer;
(g) etching 80% of said polysilicon layer using said thin film layer and said first and second oxide layers as a mask;
(h) etching said first and second oxide layers before the remaining 20% of said polysilicon layer is etched, to provide an undercut in said first and second oxide layers;
(i) removing said thin film from said first and second oxide layers;
(j) etching the remaining 20% of said polysilicon layer using the remaining layers of said first and second oxide layers as a mask, and,
(k) oxidizing the gate structure to provide a tapered and profiled oxide layer after the polysilicon without any re-entrant oxide steps.
2. The method of claim 1 wherein said thin film layer comprises a nitride layer.
3. The method of claim 1 wherein said first oxide layer comprises densified silox and said second oxide layer comprises undensified silox.
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5157471A (en) * 1988-05-16 1992-10-20 Matsushita Electronics Corporation Semiconductor non-volatile memory device
US5198996A (en) * 1988-05-16 1993-03-30 Matsushita Electronics Corporation Semiconductor non-volatile memory device
US5314836A (en) * 1992-09-15 1994-05-24 Eastman Kodak Company Method of making a single electrode level CCD
US5321282A (en) * 1991-03-19 1994-06-14 Kabushiki Kaisha Toshiba Integrated circuit having a charge coupled device and MOS transistor and method for manufacturing thereof
US5395555A (en) * 1993-11-22 1995-03-07 Eastman Kodak Company Cleaning composition for animal urine removal
US5639687A (en) * 1993-07-06 1997-06-17 Motorola Inc. Method for forming an integrated circuit pattern on a semiconductor substrate using silicon-rich silicon nitride
US6018170A (en) * 1996-06-28 2000-01-25 Nec Corporation Single-layer-electrode type two-phase charge coupled device having smooth charge transfer
US6597024B2 (en) * 2000-10-04 2003-07-22 Dalsa Corporation Charge-coupled image sensor comprising gate electrodes interconnected by shunt electrodes
US20040120545A1 (en) * 2002-10-04 2004-06-24 Sony Corporation Data processing apparatus and data processing method
US20040265704A1 (en) * 2003-06-26 2004-12-30 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple-exposure defect elimination

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US3506441A (en) * 1967-06-02 1970-04-14 Rca Corp Double photoresist processing
US3823015A (en) * 1973-01-02 1974-07-09 Collins Radio Co Photo-masking process
US4053349A (en) * 1976-02-02 1977-10-11 Intel Corporation Method for forming a narrow gap
US4061530A (en) * 1976-07-19 1977-12-06 Fairchild Camera And Instrument Corporation Process for producing successive stages of a charge coupled device
US4063992A (en) * 1975-05-27 1977-12-20 Fairchild Camera And Instrument Corporation Edge etch method for producing narrow openings to the surface of materials
US4352870A (en) * 1979-11-27 1982-10-05 Bell Telephone Laboratories, Incorporated High resolution two-layer resists

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506441A (en) * 1967-06-02 1970-04-14 Rca Corp Double photoresist processing
US3823015A (en) * 1973-01-02 1974-07-09 Collins Radio Co Photo-masking process
US4063992A (en) * 1975-05-27 1977-12-20 Fairchild Camera And Instrument Corporation Edge etch method for producing narrow openings to the surface of materials
US4053349A (en) * 1976-02-02 1977-10-11 Intel Corporation Method for forming a narrow gap
US4061530A (en) * 1976-07-19 1977-12-06 Fairchild Camera And Instrument Corporation Process for producing successive stages of a charge coupled device
US4352870A (en) * 1979-11-27 1982-10-05 Bell Telephone Laboratories, Incorporated High resolution two-layer resists

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5157471A (en) * 1988-05-16 1992-10-20 Matsushita Electronics Corporation Semiconductor non-volatile memory device
US5198996A (en) * 1988-05-16 1993-03-30 Matsushita Electronics Corporation Semiconductor non-volatile memory device
US5321282A (en) * 1991-03-19 1994-06-14 Kabushiki Kaisha Toshiba Integrated circuit having a charge coupled device and MOS transistor and method for manufacturing thereof
US5489545A (en) * 1991-03-19 1996-02-06 Kabushiki Kaisha Toshiba Method of manufacturing an integrated circuit having a charge coupled device and a MOS transistor
US5314836A (en) * 1992-09-15 1994-05-24 Eastman Kodak Company Method of making a single electrode level CCD
US5639687A (en) * 1993-07-06 1997-06-17 Motorola Inc. Method for forming an integrated circuit pattern on a semiconductor substrate using silicon-rich silicon nitride
US5395555A (en) * 1993-11-22 1995-03-07 Eastman Kodak Company Cleaning composition for animal urine removal
US6018170A (en) * 1996-06-28 2000-01-25 Nec Corporation Single-layer-electrode type two-phase charge coupled device having smooth charge transfer
US6597024B2 (en) * 2000-10-04 2003-07-22 Dalsa Corporation Charge-coupled image sensor comprising gate electrodes interconnected by shunt electrodes
US20040120545A1 (en) * 2002-10-04 2004-06-24 Sony Corporation Data processing apparatus and data processing method
US7602935B2 (en) * 2002-10-04 2009-10-13 Sony Corporation Data processing apparatus and associated method of identifying an image data source by detecting variations in strength of different light receiving elements
US20040265704A1 (en) * 2003-06-26 2004-12-30 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple-exposure defect elimination

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