US4426253A - High speed etching of polyimide film - Google Patents
High speed etching of polyimide film Download PDFInfo
- Publication number
- US4426253A US4426253A US06/327,060 US32706081A US4426253A US 4426253 A US4426253 A US 4426253A US 32706081 A US32706081 A US 32706081A US 4426253 A US4426253 A US 4426253A
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- US
- United States
- Prior art keywords
- solution
- etching
- etch
- polyimide film
- alcohol
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
Definitions
- the subject invention relates to the etching of polyimide film. More particularly, the subject invention is a process for rapidly etching polyimide film by the use of an aqueous solution containing a basic etching component and ethyl alcohol, propyl alcohol or a combination of ethyl and propyl alcohol.
- etching treatments for polyimide materials are well known. It is known, for example, that the surface of polyimide film can be etched or delustered by treating the surface of the film with a solution of sodium hydroxide or potassium hydroxide in a high boiling glycol or glycol ether. Another known process for etching polyimide film comprises exposing the film to an aqueous solution of a basic compound and ethylene diamine, the latter being present in an amount in excess of its saturation point.
- Another more complex process for etching polyimide film comprises coating the film with a thin layer of photoresist isoprene dimer having a viscosity of 100 to 400 centipoises at 25° C.; exposing this thin layer to a heat source, thereby hardening the layer; coating the film with a second layer of a similar photoresist isoprene dimer and again heat hardening; developing both photoresist layers to remove preselected sections thereof and leave corresponding portions of the polyimide unprotected; and immersing the polyimide coated with the photoresist layer in a hydrazine bath to etch away the unprotected portions of the polyimide.
- an aqueous solution of either ethyl or propyl alcohol, or a combination of ethyl and propyl alcohol, containing a basic compound will etch polyimide material up to about 400 times faster than an aqueous basic solution without the alcohol.
- an aqueous methanol solution containing a basic compound does not display this etch rate increase.
- the subject invention reduces the etch factor of such a process, a very important parameter in the electronic circuitry field.
- the subject invention is a process for etching the surface of a polyimide material comprising contacting said surface with a 45-98% by weight aqueous solution of an alcohol selected from the group consisting of ethanol, n-propanol, isopropanol or a combination of these alcohols, said solution further containing from 0.05 to 50.0 percent by weight of a basic compound; the contact time of the film with the solution and the temperature of the solution being interdependent upon the speed and degree of etching desired.
- an alcohol selected from the group consisting of ethanol, n-propanol, isopropanol or a combination of these alcohols
- FIG. 1 is a graphic illustration of how variations of alcohol concentration in solutions of the subject invention affect etch rate.
- FIG. 2 is a graphic illustration of how variations of ethanol concentration in solutions of the subject invention affect etch factor.
- the polyimide material to be treated in accordance with the process of the subject invention includes any polyimide of a polyamide-acid having the formula ##STR1## where the arrows denote isomerism, R is an organic tetravalent radical containing at least two carbon atoms, no more than 2 carbonyl groups of each polyamide-acid unit being attached to any one carbon atom of said tetravalent radical; R' is a divalent radical containing at least two carbon atoms, the amide groups of adjacent polyamide-acid units each attached to separate carbon atoms of said divalent radical; and n is a positive integer sufficient to provide the polyamide-acid with an inherent viscosity of at least 0.1.
- Typical of such a polyimide is "Kapton" polyimide film sold by E. I. du Pont de Nemours and Company, Inc. This film is formed from pyromellitic dianhydride and 4,4'-diamino-diphenyl ether having an average molecular weight ranging from 60,000 to 250,000.
- the above polyimides and their preparation are fully described in Edwards, U.S. Pat. No. 3,179,614, incorporated by reference hereinto.
- the etching treatment of the subject invention comprises contacting the polyimide material with an aqueous solution of ethanol and/or propanol which also contains a basic compound.
- aqueous solution of ethanol and/or propanol which also contains a basic compound.
- these are (1) a carbonate, hydroxide, cyanide, borate, phosphate, pyrophosphate, sulfite, sulfide or silicate of an alkali metal including sodium, potassium, lithium, rubidium and cesium; (2) a carbonate, hydroxide, cyanide, borate or sulfide of ammonia; (3) an alkoxide of an alkali metal and (4) quarternary ammonium hydroxides having a general formula ##STR2## where R' and R 2 are the same or different alkyl radicals of one through four carbons, R 3 is alkyl of one through 18 carbons or alkenyl of one through 18 carbons and R 4 is alkyl of one through 18 carbons, alkenyl of 1 through 18 carbons, phenyl, alkylphenyl where the alkyl portion has one through 18 carbons, benzyl or alkylbenzyl where the alkyl portion has one through 18 carbons.
- preferred basic compounds are the hydroxide,
- the concentration of the basic compound is determined by the speed and degree of etching desired as the basic compound is the ingredient responsible for the etching. Generally speaking, this concentration can range from about 0.05 to 50.0 percent by weight of the solution.
- the rate at which this solution etches the surface of polyimide materials is increased up to about 400 fold.
- the concentration of alcohol in the solution can range from about 45 to 98 percent by weight of the solution.
- FIG. 1 a graph derived from the data of Example 1, alcohol concentrations lower than about 45 percent or higher than about 98 percent do not result in appreciable etch rate increases.
- FIG. 1 also shows that a more preferred concentration of alcohol is 75 to 85 percent, while the most preferred concentration is about 80 percent.
- Etch factor well known in the electronic circuitry art, is a measure of the degree of etching taking place laterally within the polyimide material relative to the degree of etching taking place in a direction perpendicular to the surface of the polyimide material, generally expressed as a ratio of the former to the latter. Therefore, the smaller the etch factor, the cleaner the etching process, i.e., less lateral etching occurs within the polyimide material.
- FIG. 2 a graph derived from the data of Example 2, evidences the improvement in etch factor resulting from an etching solution of the subject invention.
- Example IV Such an application of the subject invention is seen in Example IV.
- the etch rate of the subject invention is temperature dependent, the etch rate being increased as the temperature of the etching solution is increased.
- the contact time required between the polyimide material and the etching solution is dependent upon the degree of etching desired. Therefore, the temperature of the etching solution can be anywhere between 0° C. and 80° C. and the contact time required between the polyimide material and the etching solution likewise can be anywhere above 0.01 minutes.
- FIG. 1 is a graphical representation of the following data:
- Example I When the procedure used in Example I was repeated using methanol in concentrations ranging from 20 to 100 weight percent in place of ethanol or propanol, it was found that no increase in etch rate occurred.
- Barrier tape insoluble in solutions of the subject invention, was punched with a hole and firmly pressed onto a 1 inch by 4 inch strip of 200H "Kapton" polyimide film.
- the film was immersed into a 29° C. 1.0 N KOH solution of various concentrations of ethanol and water as tabulated below, removed from the solution, rinsed and dried for 30 minutes at 100° C.
- the amount of perpendicular etch was measured as thickness loss and the amount of lateral etch, i.e., the amount of etch taking place from the walls of the holes laterally through the film, was determined using a model 6C Nikon Shadowgraph.
- etch factor is listed as the ratio of lateral etch to perpendicular etch, the results graphically illustrated in FIG. 2.
- This example is to illustrate that the etch rate of the process of the subject invention is temperature dependent.
- This Example is to illustrate that a thick gauge polyimide film can be etched using the composition of the subject invention to arrive at a thin gauge polyimide film.
- a 1.0 mil thick 8.5 ⁇ 5.5 inch polyimide film (200H "Kapton" polyimide film sold by E. I. du Pont de Nemours and Company) was placed in a 1 N KOH solution of 80 percent ethyl alcohol/20 percent water for 90 minutes, water washed and dried in a hot air oven, 30 minutes at 100° C. and 30 minutes at 400° C. The resulting film was 0.25 mil thick and displayed excellent gauge uniformity and clarity.
Abstract
Description
TABLE 1 ______________________________________ Weight Percent k Alcohol* (%/min) ______________________________________ Ethanol 40.0 0.006 60.0 0.024 80.0 0.056 100.0 0.028 n-Propanol 40.0 0.012 60.0 0.020 80.0 0.178 100.0 0.000 Iso-Propanol 40.0 0.014 60.0 0.070 80.0 0.387 100.0 0.000 ______________________________________ *The % alcohol (by wt.) represents the alcohol/water composition used to dissolve and dilute the potassium hydroxide. There is a small correction to accountfor the water in the solid potassium hydroxide, i.e., subtract 0.1% from the listed wt. % alcohol.
TABLE 2 ______________________________________ Ethanol Perpendicular Lateral Etch (wt. %) Etch (mils) Etch (mils) Factor ______________________________________ O (H.sub.2 O/KOH) 0.38 51.0 134 20 0.28 14.3 51 40 1.05 43.2 41 60 1.02 21.2 20.8 80 0.94 9.3 9.9 100 1.20 16.0 13.0 ______________________________________
TABLE 3 ______________________________________ Thickness k T °C. Time (min) (mils) (mils/min) ______________________________________ 30 30 .33 .022 40 10 .24 .075 50 3 .64 .120 ______________________________________
Claims (2)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US06/327,060 US4426253A (en) | 1981-12-03 | 1981-12-03 | High speed etching of polyimide film |
JP57208724A JPS58103531A (en) | 1981-12-03 | 1982-11-30 | Polyimide film etching process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/327,060 US4426253A (en) | 1981-12-03 | 1981-12-03 | High speed etching of polyimide film |
Publications (1)
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US4426253A true US4426253A (en) | 1984-01-17 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US06/327,060 Expired - Fee Related US4426253A (en) | 1981-12-03 | 1981-12-03 | High speed etching of polyimide film |
Country Status (2)
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US (1) | US4426253A (en) |
JP (1) | JPS58103531A (en) |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639290A (en) * | 1985-12-09 | 1987-01-27 | Hughes Aircraft Company | Methods for selectively removing adhesives from polyimide substrates |
US4758368A (en) * | 1986-07-21 | 1988-07-19 | Motorola Inc. | Method for etching silicon wafers using a potassium hydroxide and water etching solution |
US4820553A (en) * | 1984-03-09 | 1989-04-11 | Allied-Signal Inc. | Method for pretreatment of polyesters for metal plating |
EP0317748A2 (en) * | 1987-11-25 | 1989-05-31 | Schering Aktiengesellschaft | Pre-treatment process for synthetic resins |
US4846929A (en) * | 1988-07-13 | 1989-07-11 | Ibm Corporation | Wet etching of thermally or chemically cured polyimide |
US4857143A (en) * | 1988-12-16 | 1989-08-15 | International Business Machines Corp. | Wet etching of cured polyimide |
EP0338286A1 (en) * | 1988-04-18 | 1989-10-25 | Schering Aktiengesellschaft | Process for metallising a polyimide sheet on both surfaces |
US4911786A (en) * | 1989-04-26 | 1990-03-27 | International Business Machines Corporation | Method of etching polyimides and resulting passivation structure |
US4959119A (en) * | 1989-11-29 | 1990-09-25 | E. I. Du Pont De Nemours And Company | Method for forming through holes in a polyimide substrate |
EP0404049A2 (en) * | 1989-06-20 | 1990-12-27 | Ube Industries, Ltd. | Process for etching polyimide resin |
US4986880A (en) * | 1989-11-29 | 1991-01-22 | E. I. Du Pont De Nemours And Company | Process for etching polyimide substrate in formation of unsupported electrically conductive leads |
US5035769A (en) * | 1989-10-04 | 1991-07-30 | The United States Of America As Represented By The United States Department Of Energy | Nondestructive method for chemically machining crucibles or molds from their enclosed ingots and castings |
EP0455208A2 (en) | 1990-04-30 | 1991-11-06 | E.I. Du Pont De Nemours And Company | Copolyimide film with improved properties |
EP0476332A2 (en) * | 1990-09-06 | 1992-03-25 | BASF Aktiengesellschaft | Process for surface treatment of liquid crystal polymer articles |
FR2687232A1 (en) * | 1992-02-10 | 1993-08-13 | Du Pont | PROCESS FOR THE SIMULTANEOUS DEVELOPMENT AND ATTACK OF LAMINATE LAYERS BASED ON PHOTOSENSITIVE RESIN AND POLYIMIDE. |
US5242713A (en) * | 1988-12-23 | 1993-09-07 | International Business Machines Corporation | Method for conditioning an organic polymeric material |
US5331040A (en) * | 1992-10-26 | 1994-07-19 | E. I. Du Pont De Nemours And Company | Adhesive composition with functional filler |
US5350487A (en) * | 1993-05-03 | 1994-09-27 | Ameen Thomas J | Method of etching polyimide |
US5441815A (en) * | 1994-08-29 | 1995-08-15 | Industrial Technology Research Institute | Process for producing easily removable polyimide resin film |
US6158843A (en) * | 1997-03-28 | 2000-12-12 | Lexmark International, Inc. | Ink jet printer nozzle plates with ink filtering projections |
US6179989B1 (en) * | 1998-06-03 | 2001-01-30 | General Motors Corporation | Electrical and chemical treatment of an oxygen sensor |
US6183064B1 (en) | 1995-08-28 | 2001-02-06 | Lexmark International, Inc. | Method for singulating and attaching nozzle plates to printheads |
WO2001014463A1 (en) * | 1999-08-19 | 2001-03-01 | Sony Chemicals Corp. | Etchant composition for polyimide resin and method of etching |
US6218022B1 (en) * | 1996-09-20 | 2001-04-17 | Toray Engineering Co., Ltd. | Resin etching solution and process for etching polyimide resins |
US6283584B1 (en) | 2000-04-18 | 2001-09-04 | Lexmark International, Inc. | Ink jet flow distribution system for ink jet printer |
US20020030178A1 (en) * | 2000-07-12 | 2002-03-14 | Hiroshi Samukawa | Etching solutions and processes for manufacturing flexible wiring boards |
US6361821B1 (en) | 2000-12-13 | 2002-03-26 | Delphi Technologies, Inc. | Method of treating an exhaust sensor and a product thereof |
US6627034B1 (en) | 1999-07-27 | 2003-09-30 | North Carolina State University | Pattern release film between two laminated surfaces |
US6638405B2 (en) * | 2001-09-10 | 2003-10-28 | Delphi Technologies, Inc. | Gas sensor and method of manufacturing the same |
US6682640B2 (en) | 2002-06-13 | 2004-01-27 | Delphi Technologies, Inc. | Co-fired oxygen sensor elements |
US20040097694A1 (en) * | 2002-09-25 | 2004-05-20 | Kaneka Corporation | Polyimide film and laminate having metal layer and same |
US6923919B2 (en) * | 2000-07-18 | 2005-08-02 | 3M Innovative Properties Company | Liquid crystal polymers for flexible circuits |
US20050194713A1 (en) * | 2003-12-29 | 2005-09-08 | John Erickson | Method of making a molded article |
US20070006983A1 (en) * | 2005-07-11 | 2007-01-11 | Samsung Electro-Mechanics Co., Ltd. | Method for producing fine circuit lines and conductive board |
US20070120089A1 (en) * | 2005-11-28 | 2007-05-31 | 3M Innovative Properties Company | Polymer etchant and method of using same |
EP2082024A1 (en) * | 2006-09-25 | 2009-07-29 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
TWI645483B (en) * | 2017-06-30 | 2018-12-21 | 同泰電子科技股份有限公司 | Manufacturing method of substrate structure comprising vias |
US11845654B2 (en) | 2020-06-18 | 2023-12-19 | The University Of British Columbia | Methods of fabricating micro electro-mechanical systems structures |
Families Citing this family (2)
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FR2957715B1 (en) * | 2010-03-18 | 2012-04-20 | Centre Nat Rech Scient | METHOD OF FORMING A PATTERN ON A SURFACE OF A SUPPORT |
JP6450120B2 (en) * | 2014-09-10 | 2019-01-09 | 東京応化工業株式会社 | Etching apparatus and manufacturing system |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3361589A (en) | 1964-10-05 | 1968-01-02 | Du Pont | Process for treating polyimide surface with basic compounds, and polyimide surface having thin layer of polyamide acid |
US3770528A (en) | 1971-09-29 | 1973-11-06 | Martin Processing Co Inc | Method for the surface treatment of polyimide materials |
US3791848A (en) | 1972-05-19 | 1974-02-12 | Western Electric Co | A method of improving the adherence of a metal deposit to a polyimide surface |
GB1415083A (en) | 1972-09-05 | 1975-11-26 | Buckbee Mears Co | Etching of polyimide films |
US4369090A (en) | 1980-11-06 | 1983-01-18 | Texas Instruments Incorporated | Process for etching sloped vias in polyimide insulators |
-
1981
- 1981-12-03 US US06/327,060 patent/US4426253A/en not_active Expired - Fee Related
-
1982
- 1982-11-30 JP JP57208724A patent/JPS58103531A/en active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3361589A (en) | 1964-10-05 | 1968-01-02 | Du Pont | Process for treating polyimide surface with basic compounds, and polyimide surface having thin layer of polyamide acid |
US3770528A (en) | 1971-09-29 | 1973-11-06 | Martin Processing Co Inc | Method for the surface treatment of polyimide materials |
US3791848A (en) | 1972-05-19 | 1974-02-12 | Western Electric Co | A method of improving the adherence of a metal deposit to a polyimide surface |
GB1415083A (en) | 1972-09-05 | 1975-11-26 | Buckbee Mears Co | Etching of polyimide films |
US4369090A (en) | 1980-11-06 | 1983-01-18 | Texas Instruments Incorporated | Process for etching sloped vias in polyimide insulators |
Cited By (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4820553A (en) * | 1984-03-09 | 1989-04-11 | Allied-Signal Inc. | Method for pretreatment of polyesters for metal plating |
US4639290A (en) * | 1985-12-09 | 1987-01-27 | Hughes Aircraft Company | Methods for selectively removing adhesives from polyimide substrates |
US4758368A (en) * | 1986-07-21 | 1988-07-19 | Motorola Inc. | Method for etching silicon wafers using a potassium hydroxide and water etching solution |
EP0317748A2 (en) * | 1987-11-25 | 1989-05-31 | Schering Aktiengesellschaft | Pre-treatment process for synthetic resins |
EP0317748A3 (en) * | 1987-11-25 | 1989-09-06 | Schering Aktiengesellschaft | Pre-treatment process for synthetic resins |
EP0338286A1 (en) * | 1988-04-18 | 1989-10-25 | Schering Aktiengesellschaft | Process for metallising a polyimide sheet on both surfaces |
US4846929A (en) * | 1988-07-13 | 1989-07-11 | Ibm Corporation | Wet etching of thermally or chemically cured polyimide |
US4857143A (en) * | 1988-12-16 | 1989-08-15 | International Business Machines Corp. | Wet etching of cured polyimide |
US5242713A (en) * | 1988-12-23 | 1993-09-07 | International Business Machines Corporation | Method for conditioning an organic polymeric material |
US4911786A (en) * | 1989-04-26 | 1990-03-27 | International Business Machines Corporation | Method of etching polyimides and resulting passivation structure |
EP0404049A3 (en) * | 1989-06-20 | 1992-04-15 | Ube Industries, Ltd. | Process for etching polyimide resin |
EP0404049A2 (en) * | 1989-06-20 | 1990-12-27 | Ube Industries, Ltd. | Process for etching polyimide resin |
US5035769A (en) * | 1989-10-04 | 1991-07-30 | The United States Of America As Represented By The United States Department Of Energy | Nondestructive method for chemically machining crucibles or molds from their enclosed ingots and castings |
US4959119A (en) * | 1989-11-29 | 1990-09-25 | E. I. Du Pont De Nemours And Company | Method for forming through holes in a polyimide substrate |
US4986880A (en) * | 1989-11-29 | 1991-01-22 | E. I. Du Pont De Nemours And Company | Process for etching polyimide substrate in formation of unsupported electrically conductive leads |
EP0455208A2 (en) | 1990-04-30 | 1991-11-06 | E.I. Du Pont De Nemours And Company | Copolyimide film with improved properties |
EP0476332A3 (en) * | 1990-09-06 | 1992-05-27 | Basf Aktiengesellschaft | Process for surface treatment of liquid crystal polymer articles |
US5217571A (en) * | 1990-09-06 | 1993-06-08 | Basf Aktiengesellschaft | Surface treatment of moldings based on liquid crystalline polymers |
EP0476332A2 (en) * | 1990-09-06 | 1992-03-25 | BASF Aktiengesellschaft | Process for surface treatment of liquid crystal polymer articles |
FR2687232A1 (en) * | 1992-02-10 | 1993-08-13 | Du Pont | PROCESS FOR THE SIMULTANEOUS DEVELOPMENT AND ATTACK OF LAMINATE LAYERS BASED ON PHOTOSENSITIVE RESIN AND POLYIMIDE. |
US5331040A (en) * | 1992-10-26 | 1994-07-19 | E. I. Du Pont De Nemours And Company | Adhesive composition with functional filler |
US5350487A (en) * | 1993-05-03 | 1994-09-27 | Ameen Thomas J | Method of etching polyimide |
US5441815A (en) * | 1994-08-29 | 1995-08-15 | Industrial Technology Research Institute | Process for producing easily removable polyimide resin film |
US6183064B1 (en) | 1995-08-28 | 2001-02-06 | Lexmark International, Inc. | Method for singulating and attaching nozzle plates to printheads |
US6323456B1 (en) | 1995-08-28 | 2001-11-27 | Lexmark International, Inc. | Method of forming an ink jet printhead structure |
US6218022B1 (en) * | 1996-09-20 | 2001-04-17 | Toray Engineering Co., Ltd. | Resin etching solution and process for etching polyimide resins |
US6158843A (en) * | 1997-03-28 | 2000-12-12 | Lexmark International, Inc. | Ink jet printer nozzle plates with ink filtering projections |
US6179989B1 (en) * | 1998-06-03 | 2001-01-30 | General Motors Corporation | Electrical and chemical treatment of an oxygen sensor |
US6627034B1 (en) | 1999-07-27 | 2003-09-30 | North Carolina State University | Pattern release film between two laminated surfaces |
WO2001014463A1 (en) * | 1999-08-19 | 2001-03-01 | Sony Chemicals Corp. | Etchant composition for polyimide resin and method of etching |
US6283584B1 (en) | 2000-04-18 | 2001-09-04 | Lexmark International, Inc. | Ink jet flow distribution system for ink jet printer |
US20020030178A1 (en) * | 2000-07-12 | 2002-03-14 | Hiroshi Samukawa | Etching solutions and processes for manufacturing flexible wiring boards |
US20070039921A1 (en) * | 2000-07-12 | 2007-02-22 | Sony Corporation | Etching solutions and processes for manufacturing flexible wiring boards |
US7144817B2 (en) | 2000-07-12 | 2006-12-05 | Sony Corporation | Etching solutions and processes for manufacturing flexible wiring boards |
US6923919B2 (en) * | 2000-07-18 | 2005-08-02 | 3M Innovative Properties Company | Liquid crystal polymers for flexible circuits |
US6361821B1 (en) | 2000-12-13 | 2002-03-26 | Delphi Technologies, Inc. | Method of treating an exhaust sensor and a product thereof |
US6638405B2 (en) * | 2001-09-10 | 2003-10-28 | Delphi Technologies, Inc. | Gas sensor and method of manufacturing the same |
US6682640B2 (en) | 2002-06-13 | 2004-01-27 | Delphi Technologies, Inc. | Co-fired oxygen sensor elements |
US20040097694A1 (en) * | 2002-09-25 | 2004-05-20 | Kaneka Corporation | Polyimide film and laminate having metal layer and same |
US7267883B2 (en) | 2002-09-25 | 2007-09-11 | Kaneka Corporation | Polyimide film and laminate having metal layer and same |
US20050194713A1 (en) * | 2003-12-29 | 2005-09-08 | John Erickson | Method of making a molded article |
US20070006983A1 (en) * | 2005-07-11 | 2007-01-11 | Samsung Electro-Mechanics Co., Ltd. | Method for producing fine circuit lines and conductive board |
US20070120089A1 (en) * | 2005-11-28 | 2007-05-31 | 3M Innovative Properties Company | Polymer etchant and method of using same |
EP2082024A1 (en) * | 2006-09-25 | 2009-07-29 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
US20100056410A1 (en) * | 2006-09-25 | 2010-03-04 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
EP2082024A4 (en) * | 2006-09-25 | 2010-11-17 | Advanced Tech Materials | Compositions and methods for the removal of photoresist for a wafer rework application |
TWI645483B (en) * | 2017-06-30 | 2018-12-21 | 同泰電子科技股份有限公司 | Manufacturing method of substrate structure comprising vias |
US10306767B2 (en) | 2017-06-30 | 2019-05-28 | Uniflex Technology Inc. | Manufacturing method for forming substrate structure comprising vias |
US11845654B2 (en) | 2020-06-18 | 2023-12-19 | The University Of British Columbia | Methods of fabricating micro electro-mechanical systems structures |
Also Published As
Publication number | Publication date |
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JPS58103531A (en) | 1983-06-20 |
JPS614850B2 (en) | 1986-02-13 |
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