US3915757A - Ion plating method and product therefrom - Google Patents

Ion plating method and product therefrom Download PDF

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US3915757A
US3915757A US279244A US27924472A US3915757A US 3915757 A US3915757 A US 3915757A US 279244 A US279244 A US 279244A US 27924472 A US27924472 A US 27924472A US 3915757 A US3915757 A US 3915757A
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substrate
metal
ions
coating
carbon
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Niels N Engel
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Priority to CA174,527A priority patent/CA1006844A/en
Priority to IL42599A priority patent/IL42599A/en
Priority to GB3032873A priority patent/GB1423412A/en
Priority to ZA734395A priority patent/ZA734395B/en
Priority to IE1147/73A priority patent/IE37888B1/en
Priority to IT51344/73A priority patent/IT989807B/en
Priority to FR7328685A priority patent/FR2195704B1/fr
Priority to SE7310843A priority patent/SE401840B/en
Priority to CH1148473A priority patent/CH586287A5/xx
Priority to AT696173A priority patent/AT326971B/en
Priority to JP8857173A priority patent/JPS547261B2/ja
Priority to DE2340282A priority patent/DE2340282C3/en
Priority to US424672A priority patent/US3925116A/en
Priority to US05/481,486 priority patent/US3953178A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/06Surface hardening
    • C21D1/09Surface hardening by direct application of electrical or wave energy; by particle radiation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C12/00Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48Ion implantation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • C23C14/582Thermal treatment using electron bombardment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5826Treatment with charged particles
    • C23C14/5833Ion beam bombardment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5846Reactive treatment

Definitions

  • the cutting power and edge life of knife blades depend upon the presence of a matrix structure of slightly tempered martensite of high hardness and the embedding of a sufficient number of finely and uniformly distributed carbides in this matrix.
  • the carbon content of the steel substrate has been increased in order to increase the proportion of hard chromium carbides in the structure when used as cutting materials.
  • Other carbide-forming alloying constituents such as molybdenum, tungsten, vanadium, titanium and thelike have also been added to the substrate.
  • Coated substrates provide good cutting tools and wear resistant surfaces. Since corrosion often is a factor causing cutting edges or wear resistant surfaces to decay, alloys or alloying elements increasing corrosion resistance which can be added the substrate are of great benefit.
  • Various techniques have been employed to coat the surface of a substrate with a material, including ion deposition as disclosed in the patents to Hamilton, US. Pat. No. 3,404,084, issued Oct. 1, 1968; Bucek, US. Pat. No. 2,916,409, issued Dec. 8, 1959; and Hanson, et al., US. Pat. No. 3,192,892, issued July 6, 1965.
  • none of these coating techniques included steps for producing a truly superior cutting edge.
  • the present invention includes the steps of cleaning the surface of a steel or iron containing alloy substrate; implanting a sufficient amount of ions of a metal selected from the group consisting of refractory elements (scandium, titanium, zirconium, hafnium, vanadium, columbium, tantalum, chromium, molybdenum and tungsten), the rare-earth elements (lanthanum, cerium, praseodymium, neodymium, promethium, Samarium, europium, gadolinium, terbium, dysprosium, holrnium, erbium, thulium, yttrium, ytterbium and lutetium), the actinide series (actinium, thorium, protactinium, uranium, neptunium, plutonium, americium, curium, berkelium, californium, einsteinium, fermi
  • refractory elements candium, titanium,
  • Another object of the present invention is to provide a method of implanting ions of a metal into a steel or iron containing alloy substrate to form carbides of the metal within the martensite of the hardened substrate, thereby increasing the surface hardness of the substrate to produce an improved cutting tool.
  • Another object of the present invention is to provide a method of ion plating a metal onto the surface of a substrate.
  • a further object of the present invention is to provide a method of carburizing, boriding, nitriding or metallizing an ion plated substrate.
  • a still further object of the present invention is to provide cutting and abrading tools which have superior cutting power, durability, strength and corrosion and wear resistance.
  • Another object of the present invention is to provide a method of ion implanting which is adaptable to substrates of steel or iron containing alloys.
  • An object of the present invention is to provide an iron plated product which is very resistant to thermal shock.
  • Another object of the present invention is to provide an improved cutting edge which has a low coefficient of friction.
  • Ion implanting in any metal generally cause an increase in the hardness and strength of the metal.'lon implantation into a carbon containing steel combined with a hardening treatment leads to a superhard martensite independent of the implanted material.
  • the carbon content of the substrate should range from 0.3 to 1.8% by weight, with the optimum range being from 0.5 to 0.8% by weight.
  • a substrate having a carbon content below 0.3% is called mild steel and is too soft for cutting tools and various wear resistant objects. Their coats will easily break down if the support or substrate is much softer and weaker than the coating itself. Therefore, substrates should be hard, preferably hardened steel. There is actually no maximum limit of the carbon percentage within the substrate; it depends on how brittle it is desired that the substrate be after it has been quenched as discussed below.
  • the substrate used in the present invention can be any steel or iron containing alloy.
  • the ion implantation yields the advantage that the hardened matrix is harder than martensite obtained by normal hardening methods.
  • Ion plating combined with a hardening of the ion implanted matrix constitutes a method to obtain the hardest coats on a superhard matrix, which cannot be obtained by any other method. At the same time, the adherence between coat and matrix is better than can be obtained by any other method.
  • the first step in the ion plating process of the present invention is to clean the substrate.
  • the substrate is cleaned by any suitable method and then is quickly mounted on a metal holder with the edges to be ion plated exposed.
  • the holder is transferred to a vacuum chamber for ion implantation and plating wherein the substrate forms the cathode.
  • the chamber is pumped down to a vacuum of 2 l0 rnml-Ig or better with frequent flushing with argon gas. Such a low pressure is necessary to support the plasma that is created therein as described below.
  • Argon gas is let into the chamber.
  • An electrical potential is then applied to the cathode (substrate) and is gradually increased until a pink argon plasma is formed.
  • Argon is used as it will not react with the substrate or with the ion plating material and is heavy so as to increase the impact force of the ions on the substrate whereby better cleaning action is achieved.
  • the plasma forming starts in the range of lKV and 50 mamps and can then be maintained to much lower potentials.
  • the power setting can be varied according to the needs.
  • the object to be ion plated is first ion cleaned with the argon plasma.
  • the ion plating material on a filament (such as a tungsten wire) or from a pool of melted metal heated by an electron gun forms the anode within the chamber.
  • a filament such as a tungsten wire
  • an electron gun By passing sufficient current through this filament while the argon plasma is holding, the filament (anode) is gradually heated until the material on the anode melts and, aided by the substantial vacuum within the chamber, then vaporizes.
  • These ionized particles are attracted to the cathode (object to be ion plated) due to the great potential difference (which can vary from 500V to 50,000V), and thus, ion implantation and/or plating is accomplished.
  • the first ions that strike the substrate surface are implanted within the substrate and cause a gradual transition between the substrate and the surface. As the substrate becomes saturated by the ion implantation, the remainder of the ions are deposited on the substrate surface.
  • the penetration depth of the ion implantation into the substrate depends on the hardness of the substrate. Generally a substrate having a hardness of less than 50 Rockwell C is preferred.
  • the implanted ions react with the carbon present in the substrate, it is not known at this time whether they form a precipitate or are in solution within the crystalline lattice of the substrate. This is due to the fact that compounds formed by the implanted ions are too small to be observed by present day methods.
  • the time of ion plating can be varied from fractions of seconds to several minutes. During the ion plating process, the pressure in the chamber does drop somewhat, but should be maintained at the right level by adjusting the argon pressure or metal vaporization.
  • the above ion plating procedure can be performed on a number of steel or iron containing alloys, such as razor blades, industrial blades, band saws, files, nails, etc., as well as other metals and shapes including meat chopper plates.
  • Ion Plating Materials A wide range of elements can be ion plated onto the substrate. These include all of the refractory elements (scandium, titanium, zirconium, hafnium, vanadium, columbium, tantalum, chromium, molybdenum and tungsten) the rare-earth elements (lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium,
  • actinide series actinium, thorium, protactinium, uranium, neptunium, plutonium, americium, curium, berkelium, californium, einsteinium, fermium, rnendelevium, nobelium, and lawrencium
  • iron, cobalt, nickel and boron Some of these metals require a high powdered vaporization unit, such as an electron gun, in order to evaporate the same. In industrial production, electron gun vaporization would be preferred.
  • Carburizing, Boriding, Nitriding, and Metallizing Wear resistant and corrosion resistant cutting edges are obtained with superhard materials which can be added to the ion implanted substrate surface.
  • the hardest known materials are carbides, borides, and nitrides and compounds of transistion elements with second period elements, for example TiC, ScN, VC, Cr C TiB, B C, and EN.
  • any metal included in the above list of ion plating materials, other than the metal already plated on the substrate can be added to the ion implanted substrate surface. These materials can be added to the substrate as compounds; however, they are very stable and diflicult to evaporate. The best procedure is to ion plate the pure metal (Ti, Cr, B, Sc, etc.) onto the substrate, and then convert the metal to the respective carbide, boride or nitride.
  • carbon is the best material to react with titanium, boron with vanadium and nitrogen with scandium.
  • the carburizing, boriding, nitriding or metallizing must be accomplished in an oxygen free atmosphere, because an oxide of the metal coating on the substrate might be formed which would be more brittle then the carbide, boride or nitride of that metal.
  • Carburizing can occur in a number of ways: a gas containing carbon, such as any hydrocarbon, can be heated up with the coated substrate at a temperature ranging from 600900C (usually above 800C) whereby the carbon and the metal coating react to form a carbide, such as TiC, etc.
  • a gas containing carbon such as any hydrocarbon
  • the coated substrate can also be carburized by any other suitable means such as by any conventional box, cyanide or gas carburizing method. It can also be treated in a plasma formed by a nitrogen-propane mixture (or any other carburizing gas mixture including carbon evaporated from an arc.)
  • Hardening The last step is hardening of the carburized, borided, nitrided or metallized substrate to bring the substrat to the martensitic state.
  • Hardening can be accomplished by any conventional means, such as quenching in water (e.g., heating the substrate to the austenite range and cooling it with a super critical cooling velocity), by induction or by impulse hardening.
  • Hardening can be carried out as a separate process after alloying the coat or in a. combined process. Superior properties have been obtained by a fast heating of the cutting edge or a sawtip and quenching in a cooling agent or by using the matrix as a heat sink.
  • Thickness of Ion Implantation The penetration depth of the ions within the substrate can be controlled by a numer of factors such as speed of vaporization, time, potential, pressure and gecan therefore absorb impinging atoms to penetrate below the surface.
  • An advantage of the present invention is that it produces an adhesion between the coating and the sub- 5 eater than the stren th of the subometry.
  • the penetration depth usually runs from 1 to strata whlch 18 gr g 20 mils thick strate.
  • Glue was placed on a portion of the coated substrate.
  • either the substrate or the glue broke Knoop hardness of 850-900, with 1,000 being the apt under the tension.
  • Cutting edges or abrasive materlals treated in accordance with the resent invention tel-face never dld break p
  • the method of this invention produces a coating on have a martenslte with a Knoop hardness WhlCh 1s a substrate WhICh is very resistant to thermal shock. Exgreater than 1,200.
  • WhlCh 1s a substrate WhICh is very resistant to thermal shock. Exgreater than 1,200.
  • titanium carbide that imparts the very high either the coating or the JOIIlt. This can be obtained by hardness on the superhard martenslte matrix.
  • a coat mafi g 2: 2: 2 g iz g i g terial with a low coefficient of friction will prevent p a we heating through rubbing such as with chopper plates in tenslte obtained in mckel and H011 ion plated steel ret (H t h d Th ti l d d meat cutting.
  • a titanium carbide coat, for example, g e y a c i n e i yields both advantages simultaneously and, therefore, su Sequel! y car S ,aces cu gass mos as increases the resistance to thermal shock. well as diamonds.
  • a method of producing a coating on a substrate comprising the steps of:
  • a method as claimed in claim 1 including the step of cleaning the surface of said substrate prior to step (a).
  • a method as claimed in claim 2 including after step d, the steps of heating said substrate to the austenite range of the substrate and cooling it with a super critical cooling velocity.
  • a method of producing a coated body comprising the steps of:
  • a method of producing a coated body comprising the steps of:
  • a hardening chemical selected from the group consisting of carbon, boron, nitrogen and a selected one of the metals with which said coat is reactive other than said bombarding metal.
  • a method of producing a coated body comprising the steps of:
  • a method of producing a coating on a steel substrate comprising the steps of:
  • a method of producing a coating on a substrate comprising the steps of:

Abstract

An ion plating method and product therefrom wherein ions of a metal are implanted into or/and plated onto a substrate to increase the hardness of the surface. After plating, the product can be reacted with carbon, boron, nitrogen or another metal, thereby forming the carbide, boride, nitride or metal compound of the plating metal coating. Hardening of the product by quenching follows which produces a cutting tool of superior qualities.

Description

United States Patent [191 Engel [4 1 Oct. 28, 1975 ION PLATING METHOD AND PRODUCT THEREFROM [76] Inventor: Niels N. Engel, 3296 Ferncliff Place,
NE., Atlanta, Ga. 30324 [22] Filed: Aug. 9, 1972 [21] Appl. No.: 279,244
[52] US. Cl. 148/6; 30/346.55; 204/192;
204/298; 250/492; 427/38; 148/635 [51] Int. Cl. C23c 17/00; 826k 21/54 [58] Field of Search 117/93.3, 106 R, 132 CF,
[56] References Cited UNITED STATES PATENTS 2,916,409 12/1959 Bucek 204/2 98 Ehlers 117/93.3 Bieber et al. l17/93.3
Primary ExaminerMichael Sofocleous Assistant Examiner-John H. Newsome Attorney, Agent, or Firm-Newton, Hopkins &
4 Ormsby 13 Claims, No Drawings ION PLATING NETHOD AND PRODUCT THEREFROM BACKGROUND OF THE INVENTION This invention relates to an improved metalic deposition on a substrate and more particularly to an ion plating method and product therefrom.
The cutting power and edge life of knife blades depend upon the presence of a matrix structure of slightly tempered martensite of high hardness and the embedding of a sufficient number of finely and uniformly distributed carbides in this matrix.
There are many procedures utilized in the formation of cutting tools to provide a cutting edge of great hardness and durability.
With stainless steel, for example, the carbon content of the steel substrate has been increased in order to increase the proportion of hard chromium carbides in the structure when used as cutting materials. Other carbide-forming alloying constituents, such as molybdenum, tungsten, vanadium, titanium and thelike have also been added to the substrate.
Coated substrates provide good cutting tools and wear resistant surfaces. Since corrosion often is a factor causing cutting edges or wear resistant surfaces to decay, alloys or alloying elements increasing corrosion resistance which can be added the substrate are of great benefit. Various techniques have been employed to coat the surface of a substrate with a material, including ion deposition as disclosed in the patents to Hamilton, US. Pat. No. 3,404,084, issued Oct. 1, 1968; Bucek, US. Pat. No. 2,916,409, issued Dec. 8, 1959; and Hanson, et al., US. Pat. No. 3,192,892, issued July 6, 1965. However, none of these coating techniques included steps for producing a truly superior cutting edge.
SUMMARY OF THE INVENTION Briefly described, the present invention includes the steps of cleaning the surface of a steel or iron containing alloy substrate; implanting a sufficient amount of ions of a metal selected from the group consisting of refractory elements (scandium, titanium, zirconium, hafnium, vanadium, columbium, tantalum, chromium, molybdenum and tungsten), the rare-earth elements (lanthanum, cerium, praseodymium, neodymium, promethium, Samarium, europium, gadolinium, terbium, dysprosium, holrnium, erbium, thulium, yttrium, ytterbium and lutetium), the actinide series (actinium, thorium, protactinium, uranium, neptunium, plutonium, americium, curium, berkelium, californium, einsteinium, fermiurn, mendelevium, nobelium and lawrencium), iron, nickel, colbalt and boron to alloy the substrate to a preselected depth; plating a selected one of the above ions onto the substrate surface subsequent to implanting the ions; reacting the coating substrate with carbon, boron, nitrogen or a selected one of the above metals other than the implanted metal to form the carbide, boride, nitride or metal compound of the plating metal; and hardening by quenching if the substrate is steel. This treatment of the substrate produces a superhard martensite and a much harder coat of the carbide, boride, nitride or metal compound to form an excellent .cutting edge.
It is, therefore, a primary object of the present invention to provide a method of producing improved cutting edges and products therefrom.
Another object of the present invention is to provide a method of implanting ions of a metal into a steel or iron containing alloy substrate to form carbides of the metal within the martensite of the hardened substrate, thereby increasing the surface hardness of the substrate to produce an improved cutting tool.
Another object of the present invention is to provide a method of ion plating a metal onto the surface of a substrate.
A further object of the present invention is to provide a method of carburizing, boriding, nitriding or metallizing an ion plated substrate.
A still further object of the present invention is to provide cutting and abrading tools which have superior cutting power, durability, strength and corrosion and wear resistance.
Another object of the present invention is to provide a method of ion implanting which is adaptable to substrates of steel or iron containing alloys.
An object of the present invention is to provide an iron plated product which is very resistant to thermal shock.
Another object of the present invention is to provide an improved cutting edge which has a low coefficient of friction.
Still other objects and advantages of the present invention will become apparent after reading the accompanying description of the selected illustrative embodiment.
DESCRIPTION OF THE INVENTION Ion implanting in any metal generally cause an increase in the hardness and strength of the metal.'lon implantation into a carbon containing steel combined with a hardening treatment leads to a superhard martensite independent of the implanted material. In ion implanting a steel substrate, the carbon content of the substrate should range from 0.3 to 1.8% by weight, with the optimum range being from 0.5 to 0.8% by weight. A substrate having a carbon content below 0.3% is called mild steel and is too soft for cutting tools and various wear resistant objects. Their coats will easily break down if the support or substrate is much softer and weaker than the coating itself. Therefore, substrates should be hard, preferably hardened steel. There is actually no maximum limit of the carbon percentage within the substrate; it depends on how brittle it is desired that the substrate be after it has been quenched as discussed below. The substrate used in the present invention can be any steel or iron containing alloy.
The ion implantation yields the advantage that the hardened matrix is harder than martensite obtained by normal hardening methods. Ion plating combined with a hardening of the ion implanted matrix constitutes a method to obtain the hardest coats on a superhard matrix, which cannot be obtained by any other method. At the same time, the adherence between coat and matrix is better than can be obtained by any other method.
The first step in the ion plating process of the present invention is to clean the substrate. The substrate is cleaned by any suitable method and then is quickly mounted on a metal holder with the edges to be ion plated exposed. The holder is transferred to a vacuum chamber for ion implantation and plating wherein the substrate forms the cathode.
The chamber is pumped down to a vacuum of 2 l0 rnml-Ig or better with frequent flushing with argon gas. Such a low pressure is necessary to support the plasma that is created therein as described below. Argon gas is let into the chamber. An electrical potential is then applied to the cathode (substrate) and is gradually increased until a pink argon plasma is formed. Argon is used as it will not react with the substrate or with the ion plating material and is heavy so as to increase the impact force of the ions on the substrate whereby better cleaning action is achieved. The plasma forming starts in the range of lKV and 50 mamps and can then be maintained to much lower potentials. The power setting can be varied according to the needs. The object to be ion plated is first ion cleaned with the argon plasma. The argon sputters off any atomic impurities or dirt that are present on the substrate surface.
The ion plating material on a filament (such as a tungsten wire) or from a pool of melted metal heated by an electron gun forms the anode within the chamber. By passing sufficient current through this filament while the argon plasma is holding, the filament (anode) is gradually heated until the material on the anode melts and, aided by the substantial vacuum within the chamber, then vaporizes. These ionized particles are attracted to the cathode (object to be ion plated) due to the great potential difference (which can vary from 500V to 50,000V), and thus, ion implantation and/or plating is accomplished.
Actually, the first ions that strike the substrate surface are implanted within the substrate and cause a gradual transition between the substrate and the surface. As the substrate becomes saturated by the ion implantation, the remainder of the ions are deposited on the substrate surface.
The penetration depth of the ion implantation into the substrate depends on the hardness of the substrate. Generally a substrate having a hardness of less than 50 Rockwell C is preferred.
When the implanted ions react with the carbon present in the substrate, it is not known at this time whether they form a precipitate or are in solution within the crystalline lattice of the substrate. This is due to the fact that compounds formed by the implanted ions are too small to be observed by present day methods.
The time of ion plating can be varied from fractions of seconds to several minutes. During the ion plating process, the pressure in the chamber does drop somewhat, but should be maintained at the right level by adjusting the argon pressure or metal vaporization.
Objects lon Plated The above ion plating procedure can be performed on a number of steel or iron containing alloys, such as razor blades, industrial blades, band saws, files, nails, etc., as well as other metals and shapes including meat chopper plates.
Ion Plating Materials A wide range of elements can be ion plated onto the substrate. These include all of the refractory elements (scandium, titanium, zirconium, hafnium, vanadium, columbium, tantalum, chromium, molybdenum and tungsten) the rare-earth elements (lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium,
erbium, thulium, yttrium, ytterbium, and lutetium), the actinide series (actinium, thorium, protactinium, uranium, neptunium, plutonium, americium, curium, berkelium, californium, einsteinium, fermium, rnendelevium, nobelium, and lawrencium), iron, cobalt, nickel and boron. Some of these metals require a high powdered vaporization unit, such as an electron gun, in order to evaporate the same. In industrial production, electron gun vaporization would be preferred.
Carburizing, Boriding, Nitriding, and Metallizing Wear resistant and corrosion resistant cutting edges are obtained with superhard materials which can be added to the ion implanted substrate surface. The hardest known materials are carbides, borides, and nitrides and compounds of transistion elements with second period elements, for example TiC, ScN, VC, Cr C TiB, B C, and EN. Additionally, any metal included in the above list of ion plating materials, other than the metal already plated on the substrate, can be added to the ion implanted substrate surface. These materials can be added to the substrate as compounds; however, they are very stable and diflicult to evaporate. The best procedure is to ion plate the pure metal (Ti, Cr, B, Sc, etc.) onto the substrate, and then convert the metal to the respective carbide, boride or nitride.
Whether to use carbon, boron or nitrogen depends upon the substrate coating. For instance, carbon is the best material to react with titanium, boron with vanadium and nitrogen with scandium.
The carburizing, boriding, nitriding or metallizing must be accomplished in an oxygen free atmosphere, because an oxide of the metal coating on the substrate might be formed which would be more brittle then the carbide, boride or nitride of that metal.
Carburizing can occur in a number of ways: a gas containing carbon, such as any hydrocarbon, can be heated up with the coated substrate at a temperature ranging from 600900C (usually above 800C) whereby the carbon and the metal coating react to form a carbide, such as TiC, etc.
The coated substrate can also be carburized by any other suitable means such as by any conventional box, cyanide or gas carburizing method. It can also be treated in a plasma formed by a nitrogen-propane mixture (or any other carburizing gas mixture including carbon evaporated from an arc.)
Hardening The last step is hardening of the carburized, borided, nitrided or metallized substrate to bring the substrat to the martensitic state. Hardening can be accomplished by any conventional means, such as quenching in water (e.g., heating the substrate to the austenite range and cooling it with a super critical cooling velocity), by induction or by impulse hardening. Hardening can be carried out as a separate process after alloying the coat or in a. combined process. Superior properties have been obtained by a fast heating of the cutting edge or a sawtip and quenching in a cooling agent or by using the matrix as a heat sink.
Thickness of Ion Implantation The penetration depth of the ions within the substrate can be controlled by a numer of factors such as speed of vaporization, time, potential, pressure and gecan therefore absorb impinging atoms to penetrate below the surface.
An advantage of the present invention is that it produces an adhesion between the coating and the sub- 5 eater than the stren th of the subometry. The penetration depth usually runs from 1 to strata whlch 18 gr g 20 mils thick strate. Glue was placed on a portion of the coated substrate. In an attempt to pull the coating away from the Normally the martensite of cutting edges have a I substrate surface, either the substrate or the glue broke Knoop hardness of 850-900, with 1,000 being the apt under the tension. The oint or coating/substrate 1nproximate maximum. Cutting edges or abrasive materlals treated in accordance with the resent invention tel-face never dld break p The method of this invention produces a coating on have a martenslte with a Knoop hardness WhlCh 1s a substrate WhICh is very resistant to thermal shock. Exgreater than 1,200. In the case of titanium ion unplantreme and sudden temperature changes do not effect tation, it IS titanium carbide that imparts the very high either the coating or the JOIIlt. This can be obtained by hardness on the superhard martenslte matrix. In the case of iron and nickel ion im lantation for instance the Selectlon ofa coat wlth Smaller thermal expanslon a man site f Su eri hardnp is ed than the substrate. When cooled after plating at a A 1 p t S d h d somewhat elevated temperature, the coat will be under 8 f p am on S ee a i g compressive stresses. Also, the selection of a coat mafi g 2: 2: 2 g iz g i g terial with a low coefficient of friction will prevent p a we heating through rubbing such as with chopper plates in tenslte obtained in mckel and H011 ion plated steel ret (H t h d Th ti l d d meat cutting. A titanium carbide coat, for example, g e y a c i n e i yields both advantages simultaneously and, therefore, su Sequel! y car S ,aces cu gass mos as increases the resistance to thermal shock. well as diamonds.
Two files, one in annealed and another in hardened condition, were ion implanted and plated with titanium. They were carburized in a methane and hydro- Table I gen atmosphere and hardened by water quenching. It was found that there was a difference of nearly 300 30 Knoop Hardness Numbers points in the Knoop hardness between the two: Load 100 gms) Sample A Sample B Annealed file 1120 Khn Edge 1480 885 Unannealed file 825 Khn l 1 lo 885 1080 880 It is believed that this difference in hardness is caused 31 238 by the ability of dislocations to penetrate into the material. The mechanism of creating superhard martensite is most probably that atoms impinging on he m tal Su Typical hardness values for samples under varying face initiate a dislocation which moves to a certain experimental conditions of voltage, current, ion plating depth into the material carrying the impinged atom material and time of ion plating are presented in Table with it. Soft materials are permeable to dislocations and II.
Table II Material Ion Plating Time of Voltage Current Carburizing Hardness Remarks Ion Material and Ion Plat- (KV) (mamps) Medium Close To Plated Atmosphere ing The Surface (Minutes) KHN( gms) l. Plain Ti/Argon 2 2 100 C+H2 I I Scratches glass Carbon Steel repeatedly and I deeply 2. Plain Ti/Argon 3 2 I00 *C-l-H 1020 Fair Carbon Steel 3. Plain Ti/Argon 2 4 I00 *C+H2 I230 Good Carbon Steel 4. Plain Ti/Argon a 2 *c+H, 1240 Good Carbon Steel 5. Plain Ti/Argon 5 2 I00 *C+H2 I050 Fair Carbon Steel 6. Plain Fe/Argon 2 2 I00 *C+H2 1 I60 Good Carbon Steel 7. Plain AI/Argon l 2 I00 *C+H2 950 Poor Carbon Steel 8. Plain Ti/Propane 2 2 I00 Impulse 1030 Fair Carbon Steel Hardened 9. Steel File- Ti/Argon 3 3 100 *C+H 2 1 I20 Very Good Annealed 10. Steel File Ti/Argon 3 3 I00 *C+H 825 Poor (Hardened) I I. Plain None N c H /Plasma 885 Poor Carbon Steel I2. Plain None Impulse 965 Poor Carbon Steel Hardened NOTE: IJAII the samples were ion cleaned for 2 minutes in argon except No. 2
2.)C-carbon-conlaining gaseous compound such as methane,
What is claimed is:
1. A method of producing a coating on a substrate comprising the steps of:
a. bombarding a surface of the substrate with ions of a metal selected from the group consisting of scandium, titanium, zirconium, hafnium, vanadium, columbium, tantalum, chromium, molybdenum, tungsten, lanthanum, cerium, praseodymium, neodymium, promethium, Samarium, europium, gadolinium, terbirum, drysprosium, holmium, erbium, thulium, yttrium, ytterbium, lutetium, actinium, thorium, protactinium, uranium, neptunium, plutonium, americium, curium, berkelium, californium, einsteinium, fermium, memdelevium, nobelium, lawrencium, iron, cobalt, nickel, and boron to implant said ions to a preselected penetration depth within substrate;
b. continuing the bombardment until said substrate has become saturated with said ions within said preselected penetration depth;
c. further continuing said bombardment to cause said ions to plate the surface of said substrate; and
d. reacting said ion plated substrate with an element selected from the group consisting of carbon, boron, nitrogen and a selected one of said metals other than the implanted metal, so as to form the carbide, boride, nitride or metal compound of the respective plated metal on said substrate.
2. A method as claimed in claim 1 including the step of cleaning the surface of said substrate prior to step (a).
3. A method as claimed in claim 2 including after step d, the steps of heating said substrate to the austenite range of the substrate and cooling it with a super critical cooling velocity.
4. A method as claimed in claim 3 wherein said substrate is a carbon containing steel.
5. A method as claimed in claim 4 wherein said carbon containing steel substrate has a carbon content ranging from 0.3 to 1.8% by weight.
6. A method as claimed in claim 5 wherein the preferred amount of carbon in said steel substrate ranges from 0.5 to 0.8% by weight.
7. A substrate treated in accordance with claim 6 to produce a coating thereon.
8. A method of producing a coated body, comprising the steps of:
a. bombarding a substrate with a metal in ionic condition with which such substrate is reactive and at a sufiicient velocity for the metallic ions to penetrate into said substrate;
b. continuing the bombardment of said substrate with said metal for a sufficient length of time to produce a coating of said metal over the surface of the implanted metal of said substrate; and
c. reacting the coating on the surface with a substance which imparts greater hardness to the coating.
9. A method of producing a coated body, comprising the steps of:
a. bombarding a substrate with a metal in ionic condition with which such substrate is reactive and at a sufficient velocity for the metallic ions to penetrate into said substrate;
b. continuing the bombardment of said substrate with said metal for a sufficient length of time to produce a coating of said metal over the surface of the implanted metal of said substrate; and
c. hardening the resulting coated substrate by reacting the coating with a hardening chemical selected from the group consisting of carbon, boron, nitrogen and a selected one of the metals with which said coat is reactive other than said bombarding metal.
10. A method of producing a coated body, comprising the steps of:
a. bombarding a steel substrate with a metal in ionic condition with which such substrate is reactive and at a sufficient velocity for the metallic ions to penetrate into said substrate;
b. continuing the bombardment of said substrate with said metal for a sufficient length of time to produce a coating of said metal over the surface of the implanted metal of said substrate; and
c. heating said substrate to the austenite range of the substrate and cooling it with a super critical cooling velocity.
11. The method defined in claim 10 wherein said steel substrate is bombarded with a noble gas to clean its surface, prior to step (a).
12. A method of producing a coating on a steel substrate, comprising the steps of:
a. bombarding a surface of the substrate with ions of a metal selected from the group consisting of scandium, titanium, zirconium, hafnium, vanadium, columbium, tantalum, chromium, molybdenum, tungsten, lanthanum, cerium, praseodymium, neodymium, promethium, Samarium, europium, gadolinium, terbium, drysprosium, holmium, erbium, thulium, yttrium, ytterbium, lutetium, actinium, thorium, protactinium, uranium, neptunium, plutonium, americium, curium, berkelium, califomium, einsteinium, ferrnium, memdelevium, nobelium, lawrencium, iron, cobalt, nickel, and boron to implant said ions to a penetration depth within the substrate;
b. continuing said bombardment until said substrate does not accept addition of said ions;
c. further continuing said bombardment to cause said ions to coat the surface of said substrate; and
d. reacting the coat with a hardening chemical selected from the group consisting of carbon, boron, nitrogen and a selected one of the metals with which said coat is reactive other than said bombarding metal.
13. A method of producing a coating on a substrate, comprising the steps of:
a. subjecting a surface of the substrate to ions of a metal selected from the group consisting of scandium, titanium, zirconium, hafnium, vanadium, columbium, tantalum, chromium, molybdenum, tungsten, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, drysprosium, holmiurn, erbium, thulium, yttrium, ytterbium, lutetium, actinium, thorium, protactinium, uranium, neptunium, plutonium, arnericium, curium, berkelium, californium, einsteinium, fermium, memdelevium, nobelium, lawrencium, iron, cobalt, nickel and boron in a manner to implant said ions to a depth within the substrate;
b. continuing the subjection until said substrate will accept no more of said ions within said depth;
c. further continuing said implantation to cause said ions to cover the surface of said substrate; and
d. reacting said ion implanted substrate with an element selected from the group consisting of carbon,
respective plated metal.
* IR it l UNITED STATES PATENT OFFICE CERTIFICATE OF CORRECTION Patent No. 3 915 757 I Dated October 28 a 19 75 Niels N. Engel Inventor(s) It is certified that error appears in the aboveidentified patent and that said Letters Patent are hereby corrected as shown below:
Inventor; Neils N. Engel, 720 Gonzales Road,
Santa Fe, New Mexico 87501 Signed and Scaled this thirteenth D a) Of April 1 9 76 [SEAL] Arrest:
RUTH C. MASON C. MARSHALL DANN Arresting Officer (ummissium'r uflarcms and T rmlvmurks

Claims (13)

1. A METHOD OF PRODUCING A COATING ON A SUBSTRATE COMPRISING THE STEPS OF: A. BOMBARDING A SURFACE OF THE SUBSTRATE WITH IONS OF A METAL SELECTED FROM THE GROUP CONSISTING OF SCANDIUM, TITANIUM, ZIRCONIUM, HAFNIUM, VANADIUM, COLUMBIUM, TANTALUM, CHROMIUM, MOLYBDENUM, TUNGSTEN, LANTHANUM, CERIUM, PRASEODYMIUM, NEODYMIUM, PROMETHIUM, SAMARIUM, EUROPIUM, GADOLINIUM, TERBIRUM, DRYSPROSIUM, HOLMIUM, ERBIUM, THULIUM, YTTRIUM, YTTERBIUM, LUTETIUM, ACTINIUM, THORIUM, PROTACTINIUM, URANIUM, NEPTUNIUM, PLUTONIUM, AMERICIUM, CURIUM, BERKELIUM, CALIFORNIUM, EINSTEINIUM, FERMIUM, MEMDELEVIUM, NOBELIUM, LAWRENCIUM, IRON, COBALT, NICKEL, AND BORON TO IMPLANT SAID IONS TO A PRESELECTED PENETRATION DEPTH WITHIN SUBSTRATE, B. CONTINUING THE BOMBARDMENT UNTIL SAID SUBSTRATE HAS BECOME SATURATED WITH SAID IONS WITHIN SAID PRESELECTED PENETRATION DEPTH, C. FURTHER CONTINUING SAID BOMBARDMENT TO CAUSE SAID IONS TO PLATE THE SURFACE OF SAID SUBSTRATE, AND D. REACTING SAID ION PLATED SUBSTRATE WITH AN ELEMENT SELECTED FROM THE GROUP CONSISTING OF CARBON, BORON, NITROGEN AND A SELECTED ONE OF SAID METALS OTHER THAN THE IMPLANTED METAL, SO AS TO FORM THE CARBIDE, BORIDE, NITRIDE OR METAL COMPOUND OF THE RESPECTIVE METAL ON SAID SUBSTRATE.
2. A method as claimed in claim 1 including the step of cleaning the surface of said substrate prior to step (a).
3. A method as claimed in claim 2 including after step d, the steps of heating said substrate to the austenite range of the substrate and cooling it with a super critical cooling velocity.
4. A method as claimed in claim 3 wherein said substrate is a carbon containing steel.
5. A method as claimed in claim 4 wherein said carbon containing steel substrate has a carbon content ranging from 0.3 to 1.8% by weight.
6. A method as claimed in claim 5 wherein the preferred amount of carbon in said steel substrate ranges from 0.5 to 0.8% by weight.
7. A substrate treated in accordance with claim 6 to produce a coating thereon.
8. A method of producing a coated body, comprising the steps of: a. bombarding a substrate with a metal in ionic condition with which such substrate is reactive and at a sufficient velocity for the metallic ions to penetrate into said substrate; b. continuing the bombardment of said substrate with said metal for a sufficient length of time to produce a coating of said metal over the surface of the implanted metal of said substrate; and c. reacting the coating on the surface with a substance which imparts greater hardness to the coating.
9. A method of producing a coated body, comprising the steps of: a. bombarding a substrate with a metal in ionic condition with which such substrate is reactive and at a sufficient velocity for the metallic ions to penetrate into said substrate; b. continuing the bombardment of said substrate with said metal for a sufficient length of time to produce a coating of said metal over the surface of the implanted metal of said substrate; and c. hardening the resulting coated substrate by reacting the coating with a hardening chemical selected from the group consisting of carbon, boron, nitrogen and a selected one of the metals with which said coat is reactive other than said bombarding metal.
10. A method of producing a coated body, comprising the steps of: a. bombarding a steel substrate with a metal in ionic condition with which such substrate is reactive and at a sufficient velocity for the metallic ions to penetrate into said substrate; b. continuing the bombardment of said substrate with said metal for a sufficient length of time to produce a coating of said metal over the surface of the implanted metal of said substrate; and c. heating said substrate to the austenite range of the substrate and cooling it with a super critical cooling velocity.
11. The method defined in claim 10 wherein said steel substrate is bombarded with a noble gas to clean its surface, prior to step (a).
12. A method of producing a coating on a steel substrate, comprising the steps of: a. bombarding a surface of the substrate with ions of a metal selected from the group consisting of scandium, titanium, zirconium, hafnium, vanadium, columbium, tantalum, chromium, molybdenum, tungsten, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, drysprosium, holmium, erbium, thulium, yttrium, ytterbium, lutetium, actinium, thorium, protactinium, uranium, neptunium, plutonium, americium, curium, berkelium, californium, einsteinium, fermium, memdelevium, nobelium, lawrencium, iron, cobalt, nickel, and boron to implant said ions to a penetration depth within the substrate; b. continuing said bombardment until said substrate does not accept addition of said ions; c. further continuing said bombardment to cause said ions to coat the surface of said substrate; and d. reacting the coat with a hardening chemical selected from the group consisting of carbon, boron, nitrogen and a selected one of the metals with which said coat is reactive other than said bombarding metal.
13. A method of producing a coating on a substrate, comprising the steps of: a. subjecting a surface of the substrate to ions of a metal selected from the group consisting of scandium, titanium, zirconium, hafnium, vanadium, columbium, tantalum, chromium, molybdenum, tungsten, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, drysprosium, holmium, erbium, thulium, yttrium, ytterbium, lutetium, actinium, thorium, protactinium, uranium, neptunium, plutonium, americium, curium, berkelium, californium, einsteinium, fermium, memdelevium, nobelium, lawrencium, iron, cobalt, nickel and boron in a manner to implant said ions to a depth within the substrate; b. continuing the subjection until said substrate will accept no more of said ions within said depth; c. further continuing said implantation to cause said ions to cover the surface of said substrate; and d. reacting said ion implanted substrate with an element selected from the group consisting of carbon, boron, nitrogen and a selected one of said metals other than the implanted metal so as to form the carbide, boride, nitride or metal compound of the respective plated metal.
US279244A 1972-08-09 1972-08-09 Ion plating method and product therefrom Expired - Lifetime US3915757A (en)

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US279244A US3915757A (en) 1972-08-09 1972-08-09 Ion plating method and product therefrom
CA174,527A CA1006844A (en) 1972-08-09 1973-06-20 Ion plating method and product therefrom
IL42599A IL42599A (en) 1972-08-09 1973-06-26 Ion plating method and product therefrom
GB3032873A GB1423412A (en) 1972-08-09 1973-06-26 Ion plating method and product therefrom
ZA734395A ZA734395B (en) 1972-08-09 1973-06-27 Ion plating method and product therefrom
IE1147/73A IE37888B1 (en) 1972-08-09 1973-07-06 Ion plating method and product therefrom
IT51344/73A IT989807B (en) 1972-08-09 1973-07-09 ION PLATING METHOD AND PRODUCT OBTAINED WITH IT
FR7328685A FR2195704B1 (en) 1972-08-09 1973-08-06
SE7310843A SE401840B (en) 1972-08-09 1973-08-08 PLATED METAL PRODUCT AND PROCEDURE FOR THE PRODUCTION OF SUCH A PRODUCT
CH1148473A CH586287A5 (en) 1972-08-09 1973-08-08
AT696173A AT326971B (en) 1972-08-09 1973-08-08 METHOD FOR PRODUCING A COATING ON A SUBSTRATE
JP8857173A JPS547261B2 (en) 1972-08-09 1973-08-08
DE2340282A DE2340282C3 (en) 1972-08-09 1973-08-09 A method of hardening the surface of a substrate by implanting metal ions into the surface of the substrate and applying a metal coating
US424672A US3925116A (en) 1972-08-09 1973-12-14 Superhard martensite and method of making the same
US05/481,486 US3953178A (en) 1972-08-09 1974-06-21 Coated metal product

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Cited By (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4022947A (en) * 1975-11-06 1977-05-10 Airco, Inc. Transparent panel having high reflectivity for solar radiation and a method for preparing same
US4352698A (en) * 1979-12-03 1982-10-05 United Kingdom Atomic Energy Authority Method of improving the wear resistance of metals
US4377734A (en) * 1979-10-13 1983-03-22 Mitsubishi Denki Kabushiki Kaisha Method for forming patterns by plasma etching
EP0089818A2 (en) * 1982-03-23 1983-09-28 United Kingdom Atomic Energy Authority Coatings for cutting blades
US4466991A (en) * 1946-07-17 1984-08-21 Vsesojuzny Nauchno-Issledovatelsky Instrumentalny Institut Cutting tool hardening method
US4486247A (en) * 1982-06-21 1984-12-04 Westinghouse Electric Corp. Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof
US4507189A (en) * 1980-11-06 1985-03-26 Sumitomo Electric Industries, Ltd. Process of physical vapor deposition
US4532149A (en) * 1981-10-21 1985-07-30 The United States Of America As Represented By The United States Department Of Energy Method for producing hard-surfaced tools and machine components
US4634600A (en) * 1984-06-29 1987-01-06 Sumitomo Electric Industries, Ltd. Surface treatment process
US4645715A (en) * 1981-09-23 1987-02-24 Energy Conversion Devices, Inc. Coating composition and method
US4737234A (en) * 1986-08-18 1988-04-12 Westinghouse Electric Corp. Method and apparatus for permanently recording high neutron fluence
US4744938A (en) * 1986-08-18 1988-05-17 Westinghouse Electric Corp. Method and apparatus for producing ultralowmass fissionable deposits for reactor neutron dosimetry by recoil ion-implantation
US4751100A (en) * 1983-06-20 1988-06-14 Matsushita Electric Industrial Co., Ltd. Magnetic recording medium and method for making the same
US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
US5061512A (en) * 1989-02-21 1991-10-29 General Electric Company Method of producing lubricated bearings
US5088202A (en) * 1988-07-13 1992-02-18 Warner-Lambert Company Shaving razors
US5139876A (en) * 1990-03-05 1992-08-18 Cleveland State University Ceramic article having wear resistant coating
US5167725A (en) * 1990-08-01 1992-12-01 Ultracision, Inc. Titanium alloy blade coupler coated with nickel-chrome for ultrasonic scalpel
WO1993001895A1 (en) * 1991-07-16 1993-02-04 Microelectronics And Computer Technology Corporation Method of inhibiting tin whisker growth
US5224249A (en) * 1992-01-21 1993-07-06 Grumman Aerospace Corporation Corrosion prevention of honeycomb core panel construction using ion implantation
US5242741A (en) * 1989-09-08 1993-09-07 Taiho Kogyo Co., Ltd. Boronized sliding material and method for producing the same
US5246741A (en) * 1989-12-22 1993-09-21 Hitachi, Ltd. Method for surface modification and apparatus therefor
US5250327A (en) * 1986-04-28 1993-10-05 Nissin Electric Co. Ltd. Composite substrate and process for producing the same
US5301431A (en) * 1992-12-01 1994-04-12 Etm Corporation Hand-held cutting tool
US5347887A (en) * 1993-03-11 1994-09-20 Microsurgical Techniques, Inc. Composite cutting edge
US5429843A (en) * 1991-11-21 1995-07-04 Nisshin Steel Co., Ltd. Vapor deposition for formation of plating layer
US5445689A (en) * 1994-08-23 1995-08-29 Northrop Grumman Corporation Pulsed ion beam surface treatment process for aluminum honeycomb panels to improve corrosion resistance
US5458754A (en) 1991-04-22 1995-10-17 Multi-Arc Scientific Coatings Plasma enhancement apparatus and method for physical vapor deposition
US5618590A (en) * 1991-09-20 1997-04-08 Teikoku Piston Ring Co., Ltd. Process for manufacturing a piston ring
US5948523A (en) * 1996-07-19 1999-09-07 Sandvik Ab Tool for coldforming operations
US5985742A (en) * 1997-05-12 1999-11-16 Silicon Genesis Corporation Controlled cleavage process and device for patterned films
WO1999067439A1 (en) * 1998-06-23 1999-12-29 Bortec Gmbh Method and device for producing boron nitride films
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6077572A (en) * 1997-06-18 2000-06-20 Northeastern University Method of coating edges with diamond-like carbon
US6200649B1 (en) * 1999-07-21 2001-03-13 Southwest Research Institute Method of making titanium boronitride coatings using ion beam assisted deposition
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6284631B1 (en) 1997-05-12 2001-09-04 Silicon Genesis Corporation Method and device for controlled cleaving process
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6338879B1 (en) * 1998-12-09 2002-01-15 Nachi-Fujikoshi Corp. Solid lubricant film for coated cutting tool and method for manufacturing same
WO2002043803A1 (en) * 2000-11-30 2002-06-06 Semequip, Inc. Ion implantation system and control method
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
WO2003097890A2 (en) * 2002-05-22 2003-11-27 Voith Paper Patent Gmbh Method for surface treatment of a doctor blade element
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
US6723177B2 (en) 2001-07-09 2004-04-20 Southwest Research Institute Life extension of chromium coating and chromium alloys
US20040104682A1 (en) * 2000-11-30 2004-06-03 Horsky Thomas N. Ion implantation system and control method
US20040112476A1 (en) * 2001-07-09 2004-06-17 Geoffrey Dearnaley Life extension of chromium coatings and chromium alloys
US6797335B1 (en) * 1999-08-16 2004-09-28 Paderov Anatol Y Nikolaevich Method for deposition of wear-resistant coatings and for increasing the lifespan of parts
US20050100673A1 (en) * 2002-05-22 2005-05-12 Ulrich Schoof Method for the surface treatment of a doctor element
US6933509B1 (en) * 2001-09-11 2005-08-23 Allasso Industries, Inc. Apparatus and method using fractionated irradiation to harden metal
WO2005095662A1 (en) * 2004-04-02 2005-10-13 Loughborough University Enterprises Limited High chromium ferritic steel with 0.5 atomic % hafnium, part of which is ion implanted
US20050246904A1 (en) * 2002-08-21 2005-11-10 Koninklijke Philips Electronics N.V. Cutting member having a superlattice coating
US20060097193A1 (en) * 2002-06-26 2006-05-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US7056808B2 (en) 1999-08-10 2006-06-06 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
USRE39484E1 (en) 1991-09-18 2007-02-06 Commissariat A L'energie Atomique Process for the production of thin semiconductor material films
US7229675B1 (en) * 2000-02-17 2007-06-12 Anatoly Nikolaevich Paderov Protective coating method for pieces made of heat resistant alloys
US20070181830A1 (en) * 2002-06-26 2007-08-09 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US20090018644A1 (en) * 2007-07-13 2009-01-15 Jan Weber Boron-Enhanced Shape Memory Endoprostheses
US20090130392A1 (en) * 1996-05-15 2009-05-21 Commissariat A L'energie Atomique (Cea) Method of producing a thin layer of semiconductor material
US20090200494A1 (en) * 2008-02-11 2009-08-13 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
US20090277314A1 (en) * 2008-05-07 2009-11-12 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US20100072406A1 (en) * 2007-11-09 2010-03-25 Canon Kabushiki Kaisha Glass composition for ultraviolet light and optical device using the same
US7776717B2 (en) 1997-05-12 2010-08-17 Silicon Genesis Corporation Controlled process and resulting device
CN1966761B (en) * 2006-11-03 2010-09-22 广东世创金属科技有限公司 Method for adding rare earth into rare earth modified coating in ion plating
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US7883994B2 (en) 1997-12-30 2011-02-08 Commissariat A L'energie Atomique Process for the transfer of a thin film
US7902038B2 (en) 2001-04-13 2011-03-08 Commissariat A L'energie Atomique Detachable substrate with controlled mechanical strength and method of producing same
US7960248B2 (en) 2007-12-17 2011-06-14 Commissariat A L'energie Atomique Method for transfer of a thin layer
US8048766B2 (en) 2003-06-24 2011-11-01 Commissariat A L'energie Atomique Integrated circuit on high performance chip
US20120052315A1 (en) * 2007-03-22 2012-03-01 Skaff Corporation Of America, Inc. Mechanical parts having increased wear-resistance
US8142593B2 (en) 2005-08-16 2012-03-27 Commissariat A L'energie Atomique Method of transferring a thin film onto a support
RU2447194C1 (en) * 2010-08-03 2012-04-10 Федеральное государственное образовательное учреждение высшего профессионального образования "Алтайский государственный аграрный университет" (АГАУ) Method of surface impregnation of steel actuator cutting edge of tiller
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US8193069B2 (en) 2003-07-21 2012-06-05 Commissariat A L'energie Atomique Stacked structure and production method thereof
US8252663B2 (en) 2009-06-18 2012-08-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8309431B2 (en) 2003-10-28 2012-11-13 Commissariat A L'energie Atomique Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8389379B2 (en) 2002-12-09 2013-03-05 Commissariat A L'energie Atomique Method for making a stressed structure designed to be dissociated
US20140003959A1 (en) * 2012-06-27 2014-01-02 General Electric Company Modified rotor component and method for modifying a wear characteristic of a rotor component in a turbine system
CN103540945A (en) * 2013-10-21 2014-01-29 哈尔滨东安发动机(集团)有限公司 Thin-walled part nitridation deformation control method
US8778775B2 (en) 2006-12-19 2014-07-15 Commissariat A L'energie Atomique Method for preparing thin GaN layers by implantation and recycling of a starting substrate
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
CN106521406A (en) * 2016-10-21 2017-03-22 清华大学 Method for treating M50 bearing steel, strengthened M50 bearing steel and bearing
CN106521444A (en) * 2016-10-21 2017-03-22 清华大学 Method for treating M50NiL bearing steel, strengthened M50NiL bearing steel and bearing
US20180257126A1 (en) * 2008-05-05 2018-09-13 Edgewell Personal Care Brands Llc Method of making a bent razor blade
CN110042339A (en) * 2019-06-05 2019-07-23 哈尔滨工程大学 A kind of vacuum carburization method for the speedup that cools down
USD924824S1 (en) * 2018-07-24 2021-07-13 Hitachi High-Tech Corporation Ion shield plate base for semiconductor manufacturing apparatus

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51115286A (en) * 1975-04-03 1976-10-09 Anelva Corp Ornament
DE3030149C3 (en) * 1979-08-09 1996-12-19 Mitsubishi Materials Corp Cutting blade and method for its production
US4364969A (en) * 1979-12-13 1982-12-21 United Kingdom Atomic Energy Authority Method of coating titanium and its alloys
AT381268B (en) * 1982-05-05 1986-09-25 Ver Edelstahlwerke Ag TOOL AND METHOD FOR THE PRODUCTION THEREOF
GB2125442B (en) * 1982-05-24 1986-02-19 Atomic Energy Authority Uk A procedure for the hardening of materials
GB8423255D0 (en) * 1984-09-14 1984-10-17 Atomic Energy Authority Uk Surface treatment of metals
GB8512542D0 (en) * 1985-05-17 1985-06-19 Atomic Energy Authority Uk Improved cutting edges
AT388394B (en) * 1987-01-09 1989-06-12 Vni Instrument Inst METHOD FOR PRODUCING CUTTING TOOL
GB2227755B (en) * 1988-12-08 1993-03-10 Univ Hull A process for improving the wear and corrosion resistance of metallic components
DE19840950A1 (en) * 1998-09-08 2000-03-09 Jagenberg Papiertech Gmbh Knife for cutting running material webs
GB2450933A (en) * 2007-07-13 2009-01-14 Hauzer Techno Coating Bv Method of providing a hard coating
CN111893431B (en) * 2020-08-17 2022-12-20 中国人民解放军陆军装甲兵学院 20Cr2Ni4A carburizing steel with high contact fatigue resistance and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2916409A (en) * 1950-11-09 1959-12-08 Elektrophysikalische Anstalt Process and apparatus for the treatment of ferrous articles
US3341352A (en) * 1962-12-10 1967-09-12 Kenneth W Ehlers Process for treating metallic surfaces with an ionic beam
US3573098A (en) * 1968-05-09 1971-03-30 Boeing Co Ion beam deposition unit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH277400A (en) * 1948-01-08 1951-08-31 Boehler & Co Ag Geb Process for increasing the resistance of the surface of steel parts to wear, especially at high temperatures.
GB1380583A (en) * 1971-01-21 1975-01-15 Gillette Co Cutting edges

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2916409A (en) * 1950-11-09 1959-12-08 Elektrophysikalische Anstalt Process and apparatus for the treatment of ferrous articles
US3341352A (en) * 1962-12-10 1967-09-12 Kenneth W Ehlers Process for treating metallic surfaces with an ionic beam
US3573098A (en) * 1968-05-09 1971-03-30 Boeing Co Ion beam deposition unit

Cited By (155)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466991A (en) * 1946-07-17 1984-08-21 Vsesojuzny Nauchno-Issledovatelsky Instrumentalny Institut Cutting tool hardening method
US4022947A (en) * 1975-11-06 1977-05-10 Airco, Inc. Transparent panel having high reflectivity for solar radiation and a method for preparing same
US4377734A (en) * 1979-10-13 1983-03-22 Mitsubishi Denki Kabushiki Kaisha Method for forming patterns by plasma etching
US4352698A (en) * 1979-12-03 1982-10-05 United Kingdom Atomic Energy Authority Method of improving the wear resistance of metals
US4507189A (en) * 1980-11-06 1985-03-26 Sumitomo Electric Industries, Ltd. Process of physical vapor deposition
US4645715A (en) * 1981-09-23 1987-02-24 Energy Conversion Devices, Inc. Coating composition and method
US4532149A (en) * 1981-10-21 1985-07-30 The United States Of America As Represented By The United States Department Of Energy Method for producing hard-surfaced tools and machine components
EP0089818A2 (en) * 1982-03-23 1983-09-28 United Kingdom Atomic Energy Authority Coatings for cutting blades
US4470895A (en) * 1982-03-23 1984-09-11 United Kingdom Atomic Energy Authority Coatings for cutting implements
EP0089818A3 (en) * 1982-03-23 1985-04-03 United Kingdom Atomic Energy Authority Coatings for cutting blades
US4486247A (en) * 1982-06-21 1984-12-04 Westinghouse Electric Corp. Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof
US4751100A (en) * 1983-06-20 1988-06-14 Matsushita Electric Industrial Co., Ltd. Magnetic recording medium and method for making the same
US4634600A (en) * 1984-06-29 1987-01-06 Sumitomo Electric Industries, Ltd. Surface treatment process
US5250327A (en) * 1986-04-28 1993-10-05 Nissin Electric Co. Ltd. Composite substrate and process for producing the same
US4744938A (en) * 1986-08-18 1988-05-17 Westinghouse Electric Corp. Method and apparatus for producing ultralowmass fissionable deposits for reactor neutron dosimetry by recoil ion-implantation
US4737234A (en) * 1986-08-18 1988-04-12 Westinghouse Electric Corp. Method and apparatus for permanently recording high neutron fluence
US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
US5088202A (en) * 1988-07-13 1992-02-18 Warner-Lambert Company Shaving razors
US5061512A (en) * 1989-02-21 1991-10-29 General Electric Company Method of producing lubricated bearings
US5242741A (en) * 1989-09-08 1993-09-07 Taiho Kogyo Co., Ltd. Boronized sliding material and method for producing the same
US5246741A (en) * 1989-12-22 1993-09-21 Hitachi, Ltd. Method for surface modification and apparatus therefor
US5139876A (en) * 1990-03-05 1992-08-18 Cleveland State University Ceramic article having wear resistant coating
US5167725A (en) * 1990-08-01 1992-12-01 Ultracision, Inc. Titanium alloy blade coupler coated with nickel-chrome for ultrasonic scalpel
US5458754A (en) 1991-04-22 1995-10-17 Multi-Arc Scientific Coatings Plasma enhancement apparatus and method for physical vapor deposition
US6139964A (en) 1991-04-22 2000-10-31 Multi-Arc Inc. Plasma enhancement apparatus and method for physical vapor deposition
WO1993001895A1 (en) * 1991-07-16 1993-02-04 Microelectronics And Computer Technology Corporation Method of inhibiting tin whisker growth
US5393573A (en) * 1991-07-16 1995-02-28 Microelectronics And Computer Technology Corporation Method of inhibiting tin whisker growth
USRE39484E1 (en) 1991-09-18 2007-02-06 Commissariat A L'energie Atomique Process for the production of thin semiconductor material films
US5618590A (en) * 1991-09-20 1997-04-08 Teikoku Piston Ring Co., Ltd. Process for manufacturing a piston ring
US5429843A (en) * 1991-11-21 1995-07-04 Nisshin Steel Co., Ltd. Vapor deposition for formation of plating layer
US5224249A (en) * 1992-01-21 1993-07-06 Grumman Aerospace Corporation Corrosion prevention of honeycomb core panel construction using ion implantation
US5301431A (en) * 1992-12-01 1994-04-12 Etm Corporation Hand-held cutting tool
US5347887A (en) * 1993-03-11 1994-09-20 Microsurgical Techniques, Inc. Composite cutting edge
US5445689A (en) * 1994-08-23 1995-08-29 Northrop Grumman Corporation Pulsed ion beam surface treatment process for aluminum honeycomb panels to improve corrosion resistance
US8101503B2 (en) 1996-05-15 2012-01-24 Commissariat A L'energie Atomique Method of producing a thin layer of semiconductor material
US20090130392A1 (en) * 1996-05-15 2009-05-21 Commissariat A L'energie Atomique (Cea) Method of producing a thin layer of semiconductor material
US5948523A (en) * 1996-07-19 1999-09-07 Sandvik Ab Tool for coldforming operations
US5985742A (en) * 1997-05-12 1999-11-16 Silicon Genesis Corporation Controlled cleavage process and device for patterned films
US6284631B1 (en) 1997-05-12 2001-09-04 Silicon Genesis Corporation Method and device for controlled cleaving process
US6048411A (en) * 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US6632724B2 (en) 1997-05-12 2003-10-14 Silicon Genesis Corporation Controlled cleaving process
US6013563A (en) * 1997-05-12 2000-01-11 Silicon Genesis Corporation Controlled cleaning process
US6146979A (en) * 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
US6155909A (en) * 1997-05-12 2000-12-05 Silicon Genesis Corporation Controlled cleavage system using pressurized fluid
US6159825A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Controlled cleavage thin film separation process using a reusable substrate
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6162705A (en) * 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6187110B1 (en) 1997-05-12 2001-02-13 Silicon Genesis Corporation Device for patterned films
US7846818B2 (en) 1997-05-12 2010-12-07 Silicon Genesis Corporation Controlled process and resulting device
US7776717B2 (en) 1997-05-12 2010-08-17 Silicon Genesis Corporation Controlled process and resulting device
US6245161B1 (en) 1997-05-12 2001-06-12 Silicon Genesis Corporation Economical silicon-on-silicon hybrid wafer assembly
US7759217B2 (en) 1997-05-12 2010-07-20 Silicon Genesis Corporation Controlled process and resulting device
US6558802B1 (en) 1997-05-12 2003-05-06 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US6010579A (en) * 1997-05-12 2000-01-04 Silicon Genesis Corporation Reusable substrate for thin film separation
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6294814B1 (en) 1997-05-12 2001-09-25 Silicon Genesis Corporation Cleaved silicon thin film with rough surface
US7410887B2 (en) 1997-05-12 2008-08-12 Silicon Genesis Corporation Controlled process and resulting device
US6391740B1 (en) 1997-05-12 2002-05-21 Silicon Genesis Corporation Generic layer transfer methodology by controlled cleavage process
US7371660B2 (en) 1997-05-12 2008-05-13 Silicon Genesis Corporation Controlled cleaving process
US6458672B1 (en) 1997-05-12 2002-10-01 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6486041B2 (en) 1997-05-12 2002-11-26 Silicon Genesis Corporation Method and device for controlled cleaving process
US7348258B2 (en) 1997-05-12 2008-03-25 Silicon Genesis Corporation Method and device for controlled cleaving process
US6511899B1 (en) 1997-05-12 2003-01-28 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US5994207A (en) * 1997-05-12 1999-11-30 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US6528391B1 (en) 1997-05-12 2003-03-04 Silicon Genesis, Corporation Controlled cleavage process and device for patterned films
US7160790B2 (en) 1997-05-12 2007-01-09 Silicon Genesis Corporation Controlled cleaving process
US6790747B2 (en) 1997-05-12 2004-09-14 Silicon Genesis Corporation Method and device for controlled cleaving process
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6077572A (en) * 1997-06-18 2000-06-20 Northeastern University Method of coating edges with diamond-like carbon
US6890838B2 (en) 1997-07-18 2005-05-10 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US8609514B2 (en) 1997-12-10 2013-12-17 Commissariat A L'energie Atomique Process for the transfer of a thin film comprising an inclusion creation step
US8470712B2 (en) 1997-12-30 2013-06-25 Commissariat A L'energie Atomique Process for the transfer of a thin film comprising an inclusion creation step
US20110092051A1 (en) * 1997-12-30 2011-04-21 Commissariat A L'energie Atomique Process for the transfer of a thin film comprising an inclusion creation step
US7883994B2 (en) 1997-12-30 2011-02-08 Commissariat A L'energie Atomique Process for the transfer of a thin film
WO1999067439A1 (en) * 1998-06-23 1999-12-29 Bortec Gmbh Method and device for producing boron nitride films
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6338879B1 (en) * 1998-12-09 2002-01-15 Nachi-Fujikoshi Corp. Solid lubricant film for coated cutting tool and method for manufacturing same
US6200649B1 (en) * 1999-07-21 2001-03-13 Southwest Research Institute Method of making titanium boronitride coatings using ion beam assisted deposition
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6554046B1 (en) 1999-08-10 2003-04-29 Silicon Genesis Corporation Substrate cleaving tool and method
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US7056808B2 (en) 1999-08-10 2006-06-06 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6513564B2 (en) 1999-08-10 2003-02-04 Silicon Genesis Corporation Nozzle for cleaving substrates
US6797335B1 (en) * 1999-08-16 2004-09-28 Paderov Anatol Y Nikolaevich Method for deposition of wear-resistant coatings and for increasing the lifespan of parts
US7229675B1 (en) * 2000-02-17 2007-06-12 Anatoly Nikolaevich Paderov Protective coating method for pieces made of heat resistant alloys
US7064491B2 (en) 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
US7394202B2 (en) 2000-11-30 2008-07-01 Semequip, Inc. Ion implantation system and control method
US20060238133A1 (en) * 2000-11-30 2006-10-26 Horsky Thomas N Ion implantation system and control method
US20070176115A1 (en) * 2000-11-30 2007-08-02 Semequip, Inc. Ion implantation system and control method
US20040104682A1 (en) * 2000-11-30 2004-06-03 Horsky Thomas N. Ion implantation system and control method
US7609003B2 (en) 2000-11-30 2009-10-27 Semequip, Inc. Ion implantation system and control method
US7528550B2 (en) 2000-11-30 2009-05-05 Semequip, Inc. Ion implantation system and control method
WO2002043803A1 (en) * 2000-11-30 2002-06-06 Semequip, Inc. Ion implantation system and control method
US7902038B2 (en) 2001-04-13 2011-03-08 Commissariat A L'energie Atomique Detachable substrate with controlled mechanical strength and method of producing same
US7572345B2 (en) 2001-07-09 2009-08-11 Southwest Research Institute Life extension of chromium coatings and chromium alloys
US20080213503A1 (en) * 2001-07-09 2008-09-04 Southwest Research Institute Life Extension Of Chromium Coatings And Chromium Alloys
US6723177B2 (en) 2001-07-09 2004-04-20 Southwest Research Institute Life extension of chromium coating and chromium alloys
US20040112476A1 (en) * 2001-07-09 2004-06-17 Geoffrey Dearnaley Life extension of chromium coatings and chromium alloys
US6933509B1 (en) * 2001-09-11 2005-08-23 Allasso Industries, Inc. Apparatus and method using fractionated irradiation to harden metal
WO2003097890A3 (en) * 2002-05-22 2004-08-26 Voith Paper Patent Gmbh Method for surface treatment of a doctor blade element
WO2003097890A2 (en) * 2002-05-22 2003-11-27 Voith Paper Patent Gmbh Method for surface treatment of a doctor blade element
US20050100673A1 (en) * 2002-05-22 2005-05-12 Ulrich Schoof Method for the surface treatment of a doctor element
US20070194252A1 (en) * 2002-06-26 2007-08-23 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US7994031B2 (en) 2002-06-26 2011-08-09 Semequip, Inc. Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
US20070181830A1 (en) * 2002-06-26 2007-08-09 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US20060097193A1 (en) * 2002-06-26 2006-05-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US8410459B2 (en) 2002-06-26 2013-04-02 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US8071958B2 (en) 2002-06-26 2011-12-06 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US20090090872A1 (en) * 2002-06-26 2009-04-09 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US7960709B2 (en) 2002-06-26 2011-06-14 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
US7491953B2 (en) 2002-06-26 2009-02-17 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US8618514B2 (en) 2002-06-26 2013-12-31 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US20070105325A1 (en) * 2002-06-26 2007-05-10 Semequip, Inc. Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
US20050246904A1 (en) * 2002-08-21 2005-11-10 Koninklijke Philips Electronics N.V. Cutting member having a superlattice coating
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US8389379B2 (en) 2002-12-09 2013-03-05 Commissariat A L'energie Atomique Method for making a stressed structure designed to be dissociated
US8048766B2 (en) 2003-06-24 2011-11-01 Commissariat A L'energie Atomique Integrated circuit on high performance chip
US8193069B2 (en) 2003-07-21 2012-06-05 Commissariat A L'energie Atomique Stacked structure and production method thereof
US8309431B2 (en) 2003-10-28 2012-11-13 Commissariat A L'energie Atomique Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
WO2005095662A1 (en) * 2004-04-02 2005-10-13 Loughborough University Enterprises Limited High chromium ferritic steel with 0.5 atomic % hafnium, part of which is ion implanted
US20080241583A1 (en) * 2004-04-02 2008-10-02 Loughborough University High Chromium Ferritic Steel With 0.5 Atomic % Hafnium, Part Of Which Is Ion Implanted
US8142593B2 (en) 2005-08-16 2012-03-27 Commissariat A L'energie Atomique Method of transferring a thin film onto a support
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US9356181B2 (en) 2006-09-08 2016-05-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9640711B2 (en) 2006-09-08 2017-05-02 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
CN1966761B (en) * 2006-11-03 2010-09-22 广东世创金属科技有限公司 Method for adding rare earth into rare earth modified coating in ion plating
US8778775B2 (en) 2006-12-19 2014-07-15 Commissariat A L'energie Atomique Method for preparing thin GaN layers by implantation and recycling of a starting substrate
US20120052315A1 (en) * 2007-03-22 2012-03-01 Skaff Corporation Of America, Inc. Mechanical parts having increased wear-resistance
US20090018644A1 (en) * 2007-07-13 2009-01-15 Jan Weber Boron-Enhanced Shape Memory Endoprostheses
US7935947B2 (en) * 2007-11-09 2011-05-03 Canon Kabushiki Kaisha Glass composition for ultraviolet light and optical device using the same
US20100072406A1 (en) * 2007-11-09 2010-03-25 Canon Kabushiki Kaisha Glass composition for ultraviolet light and optical device using the same
US7960248B2 (en) 2007-12-17 2011-06-14 Commissariat A L'energie Atomique Method for transfer of a thin layer
US20090200494A1 (en) * 2008-02-11 2009-08-13 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
US20180257126A1 (en) * 2008-05-05 2018-09-13 Edgewell Personal Care Brands Llc Method of making a bent razor blade
US10413962B2 (en) * 2008-05-05 2019-09-17 Edgewell Personal Care Brands, Llc Method of making a bent razor blade
US11444221B2 (en) 2008-05-07 2022-09-13 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US20090277314A1 (en) * 2008-05-07 2009-11-12 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US8252663B2 (en) 2009-06-18 2012-08-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer
RU2447194C1 (en) * 2010-08-03 2012-04-10 Федеральное государственное образовательное учреждение высшего профессионального образования "Алтайский государственный аграрный университет" (АГАУ) Method of surface impregnation of steel actuator cutting edge of tiller
US20140003959A1 (en) * 2012-06-27 2014-01-02 General Electric Company Modified rotor component and method for modifying a wear characteristic of a rotor component in a turbine system
CN103540945A (en) * 2013-10-21 2014-01-29 哈尔滨东安发动机(集团)有限公司 Thin-walled part nitridation deformation control method
CN103540945B (en) * 2013-10-21 2015-07-01 哈尔滨东安发动机(集团)有限公司 Thin-walled part nitridation deformation control method
CN106521444A (en) * 2016-10-21 2017-03-22 清华大学 Method for treating M50NiL bearing steel, strengthened M50NiL bearing steel and bearing
CN106521444B (en) * 2016-10-21 2018-10-02 清华大学 It handles the method for M50NiL bearing steels, strengthen M50NiL bearing steels and bearing
CN106521406A (en) * 2016-10-21 2017-03-22 清华大学 Method for treating M50 bearing steel, strengthened M50 bearing steel and bearing
USD924824S1 (en) * 2018-07-24 2021-07-13 Hitachi High-Tech Corporation Ion shield plate base for semiconductor manufacturing apparatus
CN110042339A (en) * 2019-06-05 2019-07-23 哈尔滨工程大学 A kind of vacuum carburization method for the speedup that cools down

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