|Publication number||US3504457 A|
|Publication date||7 Apr 1970|
|Filing date||5 Jul 1966|
|Priority date||5 Jul 1966|
|Also published as||DE1652046A1|
|Publication number||US 3504457 A, US 3504457A, US-A-3504457, US3504457 A, US3504457A|
|Inventors||Hans R Jacobsen, Elmer W Jensen|
|Original Assignee||Geoscience Instr Corp|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (10), Referenced by (77), Classifications (14)|
|External Links: USPTO, USPTO Assignment, Espacenet|
April 7, 1970 H, R, JACOBSEN ET AL 3,504,457
POLISHING APPARATUS Filed July 5, 1966 40W iy//5/ BEAR/NG CON 754C 7' (IRG/N6 MF4/V5 INVENTORS HANS REM/#0107' .fS/V B52/.MER M JENSEN 2@ @Mge ys.
United States Patent O York Filed July 5, 1966, Ser. No. 562,757 Int. Cl. B24b 5/00, 29/00, 11/00 U.S. Cl. 51-131 4 Claims ABSTRACT OF THE DISCLOSURE A device for polishing semiconductor wafers wherein the polishing tool comprises a poromeric material of polyurethane reinforced with a polyester and with a polishing slurry thereon is urged into contact with the workpiece.
This invention relates to an apparatus for processing workpieces and, more specifically for imparting a polished finish to elements subjected thereto.
Many applications of present day interest require thin, fragile semiconductor wafers having a highly polished critical surface. To produce such a finish, prior art organizations have rotated such semiconductor elements against a lapping substrate in the presence of a polishing slurry.
The surface of the lapping plate in contact with the semiconductor elements has typically included thereon -as the active polishing member a pitch composition, papers, pseudo papers or other nonwovens, or felt substances. However, the above and other prior art operative polishing surfaces are characterized by at least several of the following deficiencies: (1) temperature sensitivity, and therefore instability at high polishing rates; (2) unhomogeneous consistency; (3) a propensity to pick up and retain foreign elements; (4) poor wear characteristics requiring frequent replacement; (5) variations from sample to sample; (6) the characteristics of being impermeable, and thereby preventing a polishing slurry from reaching all surface areas of a product being operated upon; (7) relatively little tensile strength, thereby being subject to distortion; and (8) a resistance to bonding, thereby being difiicult to affix to cooperating compositions and/or a lapping plate.
It is therefore an object of the present invention to provide an improved apparatus for polishing workpieces.
More specifically, an object of the present invention is the provision of a resilient, homogeneous polishing organization which is porous, relatively insensitive to temperature, and which may be fabricated with little variation from sample to sample.
These and other objects of the present invention are realized in a specific illustrative polishing organization which comprises a layer of Corfam (a trademark of the Du Pont Corporation for a poromeric material) afiixed to a lapping substrate via layers of an adhesive, chemically inert nitrile rubber, and a pressure sensitive, clean release adhesive. A pororneric material, such as Du Ponts Corfam, comprises polyurethane reinforced with polyester. In this regard see, for example, Chemistry of Organic Compounds by C. R. Noller, published by W. B. Saunders Company in 1965, at chapter 36.
The active, or free Corfam surface is adapted to be fiat such that the surface of the work elements brought into rotational bearing contact therewith will be polished, i.e., will be rendered flat. In an alternative embodiment of the present invention a porous film e.g., of foam polyurethane, is attached to the Corfam to function as the active polishing surface.
A complete understanding of the present invention and of the above and other objects thereof may be gained 3,504,457 Patented Apr. 7, 1970 from a consideration of an illustrative embodiment thereof depicted in the accompanying drawing.
Referring now to the drawing, there is shown in crosssectional form an illustrative polishing organization which embodies the principles of the present invention. The arrangement includes a layer of Corfam 20 which has a layer 35 of a, chemically inert material, eg., nitrile rubber, afiixed thereto by an adhesive 30. A layer 40` of a pressure sensitive, clean release adhesive 40 is bonded to the bottom of the nitrile rubber layer 35 for purposes of facilitating the attachment and removal of the composite polishing laminated structure with respect to a metal lapping substrate 45. It is noted that other poromeric materials, as well as other compositions embodying the attributes of Corfam described herein, may be employed in place of the Corfam layer 20.
The Corfam layer 20 is fabricated such that the upper surface thereof exhibits the requisite flatness required for a particular polishing operation (assuming that a fiat surface is desired for the workpiece), Employing such a layer 20,the lapping substrate 45 is urged into a bearing pressure contact with elements 15 to be polished. Such elements 15 may comprise, for example, semiconductor wafers, with these elements being shown in the drawing as mounted on a rotating mounting block 10. Further, the polishing operation may advantageously take place in a polishing liquid slurry environment, with the slurry being supplied by a slurry source 50 via a nozzle 51.
The Corfam material 20 is very porous, and hence the slurry is translated by the layer 20 to all portions of the surface of the elements 15 thereby effecting uniform polishing. Also, the Corfam material 20 is essentially insensitive to temperature, at least in the temperature range of interest for polishing operations. Accordingly, polishing may be accomplished at high rates of speed. Further, the layer 20 is homogeneous, and may be fabricated in relatively large quantities to produce many uniform polishing layers without material variation from element to element.
Moreover, Corfam is resilient and prevents damage to elements 15 being polished by absorbing mechanical vibrations and any compaction caused by overshoot of the mounting members 10 or 45. In addition, the layer 20 is durable which is beneficial from maintenance and batch processing rate standpoints.
Still further, the active, upper surface of the Corfam layer 20 can be treated or impregnated when required for special polishing operations. Such treatment may comprise, for example, brushing, napping, skiving or texturing the polishing Corfam surface to increase the number for active polishing fibers, or calendering the surface to increase its atness.
The composite laminated polishing organization 20-30- 35-40 is easily attached to, and removed from the lapping substrate 45 by reason of the properties of the pressure sensitive, clean release adhesive layer 40. The inert layer 35 is employed to insulate the adhesive 40 from the layers thereabove, and also from the slurry which would otherwise reach the adhesive I40 through the porous Corfam layer 20. Such lforeign substances would tend to change the physical state of the adhesive 40, e.g., harden it thereby making attachment to and removal from the plate 45 more difficult.
By way of -functional operation, when rotational bearing contact is established between the Corfam upper surface and the lwork pieces 15, the desired polishing surface is imparted to the lower, critical surface of these elements. Hence, the desired polishing is accomplished.
In an alternative embodiment of the invention a porous film 23, e.g., of foam polyurethane, is afiixed to the upper surface of the Corfam layer 20 by a porous adhesive 25. In such an arrangement, the upper face of the film 23 is the effective polishing surface, with the Corfam backing layer 20 providing resiliency and strength, while maintaining a composite porous organization which is desirable in a polishing organization for the reasons given hereinabove. Thus it is noted that compositions 4which are porous only in film thicknesses, but which otherwise have desirable polishing properties, may be used as a polishing surface when mounted on a Corfam backing layer 20.
Thus, the organization shown in the drawing, both with and without the film 23 and the adhesive 25, has been shown by the above to function as a very desirable polishing structure.
1t is to be understood that the above described method and organizations are only illustrative of the application of the principles of the present inventions. Numerous other arrangements and modes of operation may be devised by those skilled in the art without departing from the spirit and scope of this invention. For example, the active polishing surface, i.e., the upper surface of the Corfam 20 or the lm 23 if such a lm is employed, may exhibit a geometry other than a at plane -when a nonat work piece of a corresponding geometry is to be polished. In addition, other known bonding mechanisms, such as mechanical interlocking or distortion, may be used to fabricate the composite laminated polishing structure shown in the drawing vwithout the use of the adhesives 25 and 30.
1. In combination in a polishing organization, a poromeric material comprising polyurethane reinforced with polyester, a porous film axed to said poromeric material, wherein said poromeric material has rst and second surfaces, said rst surface engaging said porous hlm, and further comprising an inert layer of nitrile rubber I affixed to said second surface of said Corfam.
plate, and means for selectively urging work pieces to be polished into a bearing relationship with said lapping plate.
3. In combination in a polishing organization, a poromeric material comprising polyurethane reinforced with polyester, a porous hlm aixed to said poromeric material, Iwherein said porous lm is polyurethane, and means for selectively urging work pieces to be polished into bearing contact with said porous film.
4. In combination in a polishing organization, a lapping substrate, a poromeric layer comprising polyurethane reinforced with polyester mounted on said substrate, said poromeric layer including a polishing surface thereon, and means for urging work pieces to be polished into bearing contact with said poromeric polishing surface.
References Cited UNITED STATES PATENTS 2,644,280 7 l 95 3 ONeil 51-406 3,050,909 8/ 1962 Rawstron 51-124 3,082,582 3/1963 Jeske 51-407 X 3,123,953 3/1964 Merkl 51-283 3,360,889 1/1968 Borish 51-131 X 671,130 4/1901 Darden 51-401 804,853 11/1905 Ireson. 1,923,719 8/1933 Fuller 51-301 X 2,650,158 8/1953 Eastman 51-407 X FOREIGN PATENTS 681,832 3/1964 Canada.
OTHER REFERENCES Boot and 'Shoe Recorder, Oct. l, 1963, article titled The Story of Corfam pages 1-2 thereof.
HAROLD D. WHITEHEAD, Primary Examiner U.'S. C1. XR.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US671130 *||2 May 1900||2 Apr 1901||Newton J Darden||Pencil-sharpener.|
|US804853 *||17 Mar 1905||21 Nov 1905||Charles L Ireson||Method of attachment of rubber and leather.|
|US1923719 *||27 Apr 1931||22 Aug 1933||Gen Electric||Stropping material|
|US2644280 *||13 Sep 1950||7 Jul 1953||Carborundum Co||Sanding disk accessory|
|US2650158 *||3 Aug 1950||25 Aug 1953||Carborundum Co||Scouring implement|
|US3050909 *||16 Feb 1960||28 Aug 1962||Rawstron George Ormerod||Apparatus for and method of polishing aspheric surfaces|
|US3082582 *||21 Jul 1960||26 Mar 1963||Formax Mfg Corp||Sanding pad assembly|
|US3123953 *||13 Dec 1962||10 Mar 1964||merkl|
|US3360889 *||11 Oct 1965||2 Jan 1968||Indiana Contact Lens Inc||Method for altering the power of a corneal contact lens|
|CA681832A *||10 Mar 1964||Dominion Rubber Co||Flexible laminate|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US3841031 *||30 Oct 1972||15 Oct 1974||Monsanto Co||Process for polishing thin elements|
|US3857123 *||27 Oct 1972||31 Dec 1974||Monsanto Co||Apparatus for waxless polishing of thin wafers|
|US3947953 *||23 Aug 1974||6 Apr 1976||Nitto Electric Industrial Co., Ltd.||Method of making plastic sealed cavity molded type semi-conductor devices|
|US4728552 *||6 Jul 1984||1 Mar 1988||Rodel, Inc.||Substrate containing fibers of predetermined orientation and process of making the same|
|US4841680 *||20 Sep 1988||27 Jun 1989||Rodel, Inc.||Inverted cell pad material for grinding, lapping, shaping and polishing|
|US4927432 *||25 Mar 1986||22 May 1990||Rodel, Inc.||Pad material for grinding, lapping and polishing|
|US4954141 *||25 Jan 1989||4 Sep 1990||Showa Denko Kabushiki Kaisha||Polishing pad for semiconductor wafers|
|US5257478 *||31 Jan 1992||2 Nov 1993||Rodel, Inc.||Apparatus for interlayer planarization of semiconductor material|
|US5403228 *||8 Jul 1993||4 Apr 1995||Lsi Logic Corporation||Techniques for assembling polishing pads for silicon wafer polishing|
|US5510175 *||1 Mar 1995||23 Apr 1996||Chiyoda Co., Ltd.||Polishing cloth|
|US5618227 *||5 Sep 1995||8 Apr 1997||Mitsubushi Materials Corporation||Apparatus for polishing wafer|
|US5649855 *||23 Jan 1996||22 Jul 1997||Nec Corporation||Wafer polishing device|
|US5664989 *||18 Jul 1996||9 Sep 1997||Kabushiki Kaisha Toshiba||Polishing pad, polishing apparatus and polishing method|
|US5692950 *||8 Aug 1996||2 Dec 1997||Minnesota Mining And Manufacturing Company||Abrasive construction for semiconductor wafer modification|
|US5769699 *||19 May 1995||23 Jun 1998||Motorola, Inc.||Polishing pad for chemical-mechanical polishing of a semiconductor substrate|
|US5846335 *||22 Apr 1997||8 Dec 1998||Ebara Corporation||Method for cleaning workpiece|
|US5913712 *||12 Mar 1997||22 Jun 1999||Cypress Semiconductor Corp.||Scratch reduction in semiconductor circuit fabrication using chemical-mechanical polishing|
|US6007407 *||20 Aug 1997||28 Dec 1999||Minnesota Mining And Manufacturing Company||Abrasive construction for semiconductor wafer modification|
|US6036579 *||12 Jan 1998||14 Mar 2000||Rodel Inc.||Polymeric polishing pad having photolithographically induced surface patterns(s) and methods relating thereto|
|US6095902 *||23 Sep 1998||1 Aug 2000||Rodel Holdings, Inc.||Polyether-polyester polyurethane polishing pads and related methods|
|US6210254 *||2 Feb 2000||3 Apr 2001||Rodel Holdings Inc.||Method of manufacturing a polymeric polishing pad having photolithographically induced surface pattern(s)|
|US6238592||10 Mar 1999||29 May 2001||3M Innovative Properties Company||Working liquids and methods for modifying structured wafers suited for semiconductor fabrication|
|US6284114||24 Mar 2000||4 Sep 2001||Rodel Holdings Inc.||Method of fabricating a porous polymeric material by electrophoretic deposition|
|US6336845||12 Nov 1997||8 Jan 2002||Lam Research Corporation||Method and apparatus for polishing semiconductor wafers|
|US6416385||22 Jun 2001||9 Jul 2002||Lam Research Corporation||Method and apparatus for polishing semiconductor wafers|
|US6431959||20 Dec 1999||13 Aug 2002||Lam Research Corporation||System and method of defect optimization for chemical mechanical planarization of polysilicon|
|US6517418||22 Jun 2001||11 Feb 2003||Lam Research Corporation||Method of transporting a semiconductor wafer in a wafer polishing system|
|US6626740||21 Dec 2000||30 Sep 2003||Rodel Holdings, Inc.||Self-leveling pads and methods relating thereto|
|US6746311 *||24 Jan 2000||8 Jun 2004||3M Innovative Properties Company||Polishing pad with release layer|
|US6848974||24 Sep 2002||1 Feb 2005||Jsr Corporation||Polishing pad for semiconductor wafer and polishing process using thereof|
|US6852020||22 Jan 2003||8 Feb 2005||Raytech Innovative Solutions, Inc.||Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same|
|US6863774||1 Mar 2002||8 Mar 2005||Raytech Innovative Solutions, Inc.||Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same|
|US6884156||17 Jun 2003||26 Apr 2005||Cabot Microelectronics Corporation||Multi-layer polishing pad material for CMP|
|US7025668||18 Jun 2003||11 Apr 2006||Raytech Innovative Solutions, Llc||Gradient polishing pad made from paper-making fibers for use in chemical/mechanical planarization of wafers|
|US7037184||22 Jan 2003||2 May 2006||Raytech Innovation Solutions, Llc||Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same|
|US7192340||28 Nov 2001||20 Mar 2007||Toyo Tire & Rubber Co., Ltd.||Polishing pad, method of producing the same, and cushion layer for polishing pad|
|US7255637||10 Oct 2001||14 Aug 2007||Applied Materials, Inc.||Carrier head vibration damping|
|US7329170||2 Mar 2006||12 Feb 2008||Toyo Tire & Rubber Co., Ltd.||Method of producing polishing pad|
|US7331847 *||17 Jan 2006||19 Feb 2008||Applied Materials, Inc||Vibration damping in chemical mechanical polishing system|
|US7435161||25 Apr 2005||14 Oct 2008||Cabot Microelectronics Corporation||Multi-layer polishing pad material for CMP|
|US7497767||28 Jan 2005||3 Mar 2009||Applied Materials, Inc.||Vibration damping during chemical mechanical polishing|
|US7618529||25 May 2004||17 Nov 2009||Rohm And Haas Electronic Materials Cmp Holdings, Inc||Polishing pad for electrochemical mechanical polishing|
|US7641540||2 Mar 2006||5 Jan 2010||Toyo Tire & Rubber Co., Ltd||Polishing pad and cushion layer for polishing pad|
|US7654885||1 Oct 2004||2 Feb 2010||Applied Materials, Inc.||Multi-layer polishing pad|
|US7762870||2 Mar 2006||27 Jul 2010||Toyo Tire & Rubber Co., Ltd||Polishing pad and cushion layer for polishing pad|
|US7807038||14 Sep 2009||5 Oct 2010||Rohm And Haas Electronic Materials Cmp Holdings, Inc.||Method for electrochemical mechanical polishing|
|US8066552||26 Jan 2005||29 Nov 2011||Applied Materials, Inc.||Multi-layer polishing pad for low-pressure polishing|
|US8075372||1 Sep 2004||13 Dec 2011||Cabot Microelectronics Corporation||Polishing pad with microporous regions|
|US8092707||15 Aug 2007||10 Jan 2012||3M Innovative Properties Company||Compositions and methods for modifying a surface suited for semiconductor fabrication|
|US8376813||10 Feb 2010||19 Feb 2013||Applied Materials, Inc.||Retaining ring and articles for carrier head|
|US8535121||15 Feb 2013||17 Sep 2013||Applied Materials, Inc.||Retaining ring and articles for carrier head|
|US20020081956 *||10 Oct 2001||27 Jun 2002||Applied Materials, Inc.||Carrier head with vibration dampening|
|US20020127862 *||1 Mar 2002||12 Sep 2002||Cooper Richard D.||Polishing pad for use in chemical - mechanical palanarization of semiconductor wafers and method of making same|
|US20030060126 *||16 Jul 2002||27 Mar 2003||Lam Research Corporation||System and method of defect optimization for chemical mechanical planarization of polysilicon|
|US20040055223 *||28 Nov 2001||25 Mar 2004||Koichi Ono||Polishing pad, method of manufacturing the polishing pad, and cushion layer for polishing pad|
|US20040072522 *||18 Jun 2003||15 Apr 2004||Angela Petroski||Gradient polishing pad made from paper-making fibers for use in chemical/mechanical planarization of wafers|
|US20040142637 *||22 Jan 2003||22 Jul 2004||Angela Petroski||Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same|
|US20040142638 *||22 Jan 2003||22 Jul 2004||Angela Petroski||Polishing pad for use in chemical - mechanical planarization of semiconductor wafers and method of making same|
|US20040259484 *||17 Jun 2003||23 Dec 2004||Cabot Microelectronics Corporation||Multi-layer polishing pad material for CMP|
|US20050098446 *||1 Oct 2004||12 May 2005||Applied Materials, Inc.||Multi-layer polishing pad|
|US20050197050 *||25 Apr 2005||8 Sep 2005||Cabot Microelectronics Corporation||Multi-layer polishing pad material for CMP|
|US20050221723 *||26 Jan 2005||6 Oct 2005||Applied Materials, Inc.||Multi-layer polishing pad for low-pressure polishing|
|US20050245181 *||28 Jan 2005||3 Nov 2005||Applied Materials, Inc.||Vibration damping during chemical mechanical polishing|
|US20060046622 *||1 Sep 2004||2 Mar 2006||Cabot Microelectronics Corporation||Polishing pad with microporous regions|
|US20060148387 *||17 Jan 2006||6 Jul 2006||Applied Materials, Inc., A Delaware Corporation||Vibration damping in chemical mechanical polishing system|
|US20060148391 *||2 Mar 2006||6 Jul 2006||Koichi Ono||Polishing pad and cushion layer for polishing pad|
|US20060148392 *||2 Mar 2006||6 Jul 2006||Koichi Ono||Method of producing polishing pad|
|US20060148393 *||2 Mar 2006||6 Jul 2006||Koichi Ono||Polishing pad and cushion layer for polishing pad|
|US20070049169 *||1 Aug 2006||1 Mar 2007||Vaidya Neha P||Nonwoven polishing pads for chemical mechanical polishing|
|US20070087177 *||12 Oct 2004||19 Apr 2007||Guangwei Wu||Stacked pad and method of use|
|US20080039000 *||2 Aug 2007||14 Feb 2008||Applied Materials, Inc.||Reataining ring and articles for carrier head|
|US20110269380 *||13 Aug 2010||3 Nov 2011||Iv Technologies Co., Ltd.||Base layer, polishing pad including the same and polishing method|
|EP0291100A2 *||16 May 1988||17 Nov 1988||Asahi Kasei Kogyo Kabushiki Kaisha||Polishing cloth|
|EP0304645A2 *||26 Jul 1988||1 Mar 1989||Rodel, Inc.||Inverted cell pad material for grinding, lapping, shaping and polishing|
|EP0555660A2 *||18 Jan 1993||18 Aug 1993||Westech, Inc.||Apparatus for interlayer planarization of semiconductor material|
|EP1295680A2 *||24 Sep 2002||26 Mar 2003||JSR Corporation||Polishing pad for semiconductor wafer|
|WO1991014538A1 *||22 Mar 1991||3 Oct 1991||Westech Systems Inc||Apparatus for interlayer planarization of semiconductor material|
|U.S. Classification||451/288, 257/E21.237, 451/533|
|International Classification||B24B37/04, H01L21/304, B24D7/02|
|Cooperative Classification||B24B37/042, B24B37/22, H01L21/02024, B24D7/02|
|European Classification||B24B37/22, B24D7/02, B24B37/04B, H01L21/02D2M2P|