US3216805A - Device for crucible-free zone melting - Google Patents

Device for crucible-free zone melting Download PDF

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US3216805A
US3216805A US147799A US14779961A US3216805A US 3216805 A US3216805 A US 3216805A US 147799 A US147799 A US 147799A US 14779961 A US14779961 A US 14779961A US 3216805 A US3216805 A US 3216805A
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rod
zone
melting
crucible
vacuum
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Emeis Reimer
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Siemens Schuckertwerke AG
Siemens AG
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/26Stirring of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32Mechanisms for moving either the charge or the heater
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002Continuous growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91Downward pulling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917Magnetic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1036Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone

Definitions

  • the crucible-free zone melting method consists in firmly clamping the two ends of the rod-shaped body and to liquefy a cross-sectional zone of slight axial thickness by heating without the use of a crucible or the like retaining means.
  • the heating device required for this purpose, and the crystalline rod, are moved relative to each other in the longitudinal direction of the rod, so that the melting zone travels longitudinally through the rod.
  • a considerably better result can be obtained by means of a device which, according to the invention, has a vacuum' chamber whose width is very large relative to the diameter of the ring-shaped heating device, particularly if a multiple of that diameter.
  • the vacuum chamber width should be at least times the diameter of the rod to be processed.
  • the precipitated coating reached such a thickness that portions thereof sealed off the wall of the quartz tube and dropped down, due to the continuous change of heating when the melting zone passed by and the immediately following cooling.
  • the precipitation scales can then enter into the melting zone and contaminate the molten zone because the precipitation also comprises impurity substances, for example those that became evaporated together with the silicon out of the melting zone during the The precipitation scales thus reachinto the zone as Well as into the portion of the silicon rod through which the melting zone will subsequently 3,2 16,805 Patented Nov. 9, 1965 travel. It follows that one of the prime purposes of the crucible-free zone melting, namely the production of extremely pure silicon, can be defeated in some cases when using a relatively narrow vacuum vessel.
  • FIG. 1 shows a sectional front view of an embodiment of a complete processing device according to the invention, the section being taken along the line II indicated in FIG. 3;
  • FIG. 2 shows a side view thereof, also in section, the section being taken along the line IIII in FIG. 3;
  • FIG. 3 shows a cross section seen from the top along the line III-III in FIG. 1, the bell-shaped housing of the device being removed;
  • FIGS. 4 and 5 show details relating to the electrical connections and circuits of the device.
  • FIGS. 6, 7 and 8 show separately a number of individual parts of the device.
  • the rod of semiconductive material to be treated is shown in an intermediate stage of the processing procedure in which this rod has a relatively thick upper portion 11 and a relatively thin lower portion 12 (FIG. 1). That is, the portion 12 has already passed through the zone-melting process so that its cross section has become reduced in comparison with the original cross section of the upper rod portion 11.
  • the material in the melting zone 13 is liquid and forms a drop.
  • a holder 14 for the lower rod portion is revolvably mounted on a base plate 15 and is vacuum-tightly sealed at the base plate.
  • the plate 15 forms the bottom of a recipient within which the process is carried out in vacuum or in an atmosphere of inert gas.
  • the base plate 15 is provided with a nipple (FIG.
  • the bell 31 of the recipient consists of steel.
  • a cooling coil 32 of copper tubing forms several turns around the bell and is soldered thereto.
  • the cooling coil 32 may be connected to a water supply pipe.
  • the bell is sealed by means of a gasket ring 33 and is held pressed against the base plate 15 by screw clamps 34 (FIG. 1).
  • the base plate 15 has rubber feet 79 resting upon a three-legged support 35 so that the base plate is readily accessible from below. It may be seen from the drawing that the internal diameter of the bell is at least ten times the diameter of heating ring 22.
  • Two screw spindles 16 and 17 pass revolvably and vacuum-tightly sealed through respective openings of the base plate 15.
  • An internally threaded support 18 of brass, in threaded engagement with the spindle 16, carries a holder 19 for the upper end of rod portion 11. Holder 19 is joined with support 18 by means of an arm 29 consisting preferably of insulating material.
  • Another support 20, also of brass, is mounted on the spindle 17 in threaded engagement therewith.
  • Support 20 carries the heating device.
  • the supports 13 and 20 slide along guiding frames each consisting of two steel rods 46, 47 and 48, 49 respectively, of circular cross section. Two cross bars 50 and 51 interconnect the rods 46 and 47 at both ends respectively.
  • the rods 48 and 49 that guide the support 20 for the heating device are preferably designed as tubes according to FIG. 6.
  • the upper openings of the tubular rods communicate with each other through a duct in the interior of the cross bar 53.
  • the lower openings are connected through respective bores in base plate 15 with nipples 54 and 55 through which cooling water is circulated through the rods.
  • a ring-shaped heating device consisting of an annularly bent strip 22 of tungsten, is energized by electric current in the order of magnitude of 100 amps.
  • the temperature of the heater is controlled depending upon the melting point of the semiconductor material. This temperature, for instance, is about 2000 C. for silicon, corresponding to a melting point of ap proximately 1400 C.
  • the melting points for germanium and the semiconductive compounds are lower, in part below 1000" C. so that the temperature of the ring-shaped heater may be correspondingly lower.
  • the liquid zone of the semiconductor rod therefore, has the melting temperature of the particular substance being processed.
  • the time of the heating treatment results from the velocity at which the heating device is moved along the rod as specified in this disclosure.
  • the lugs 23 are clamped to the support 20 by means of a copper plate 28 with an intermediate layer of mica.
  • the plate 28 is fastened to support 20 by means of insulated screws.
  • the current-conducting cross section of the terminal lugs 23 can be doubled by back-folding the clamped ends as is apparent from FIG. 5.
  • the support 20 and the plate 28 carry respective terminals 36, 37 for the connection of flexible current supply cables 38 leading to conductor pins 39 (FIG. that extend vacuum-tightly through the base plate 15.
  • the current supply cables are only schematically represented in the drawing (FIG. 5).
  • the lead-in pins 39 are connected with the high-current output winding of an auxiliary transformer 40 (FIG. 4) having a primary winding energized through a variable autotransformer 41 from the terminals or buses 42 of an alternating current line so that the output voltage can be adjusted between zero and, for instance, volts.
  • the temperature of the heater is thus controlled by the variable autotransformer.
  • the respective shaft ends 43 and 44 of the threaded spindles 16 and 17 are driven through suitable transmissions, for instance the illustrated worm gears 80 and 81, from small direct-current shunt motors 82, 83. These motors may be mounted on the support 35 in any suitable manner.
  • the ratio of the revolving speeds of motors 82 and 83 is so adjusted that the support 20 moves upwardly at a greater velocity than the support 18.
  • the heating device 22 and its support 20 may move upwardly at a speed in the order of 0.5 to 5 mm. per minute.
  • the cross section of the lower rod portion 12 becomes about half as large as that of the upper rod portion 11.
  • the rod-shaped body being zone-melted can be drawn to a cross section of any desired thinness.
  • the ratio of the revolving speeds may also be adjusted by a mechanical transmission or by an automatic electric control and, if desired, this speed ratio may be varied at will or may be automatically regulated during the zone-melting operation.
  • the clamping device 21 comprises a holder 56 that forms a semi-annulus about the rod portion 12 and carries two guide fingers 25 and 26 of which one is resiliently displaceable and biased by a pressure spring 27.
  • the guide fingers 25 and 26 may consist of carbon or aluminum oxide. They are preferably cylindrically recessed where they come into slidable engagement with the rod portion 12. The guide fingers maintain the free end of rod portion 12 axially aligned with the heating device and with the upper rod portion 11. However, if the cross section of the treated body is larger than 5 square-millimeters, it is, as a rule, unnecessary to provide additional means for guiding the rod during the processing operations.
  • Another guiding device 24 is provided for the upper rod portion 11.
  • the guiding device 24 is similar to device 21 and is mounted on support 20 by means of another clamping plate 58.
  • the guiding devices 21 and 24 may also serve as means for supplying an electrical current in the order of a few amperes to be additionally passed through the melting zone 13.
  • the holders 56 consisting of a conductive material such as brass, are in conductive contact with the clamping plates 57 and 58 also consisting of conductive material, but are insulated from the support 20 and the fastening screws by an intermediate insulating layer of heat-resistant material such as mica.
  • the clamping plates 57 and 58 are provided with terminal screws 59, 60 that are connected by leads 61 to vacuum-tightly sealed lead-in terminals 62 traversing the base plate 15 (FIG. 5).
  • the lead-in terminals 62 are connected to a direct-current or alternatingcurrent source.
  • the device is further equipped with means for revolving the rod portions 11 and 12.
  • the shaft end 63 of the holder 14, vacuum-tightly journalled to the base plate 15, is coupled by a gear transmission 64 with a drive motor 65.
  • the upper holder 19 is also provided with a shaft end 66 (FIG. 1) which is journalled in the bore of the supporting arm and carries a spur gear 67.
  • Another spur gear 68 is journalled on a supporting arm 69 (FIGS. 2, 3) mounted on support 18.
  • Gears 67 and 68 are continuously in meshing engagement with each other.
  • a shaft 70 with a longitudinal groove 71 (FIGS. 1, 2, 3) passes through a central bore in the hub portion of spur gear 69.
  • Shaft 70 has its lower end vacuum-tightly journalled in the base plate 15. The shaft end, extending through the base plate, is connected by a gear transmission 73 with a drive motor 74.
  • the apparatus for rotating the rod ends just described makes it possible to drive the upper rod portion 11 alone or the lower rod portion alone or both rod portions simultaneously, either in the same direction or in opposite directions of revolution, and at any desired speed between 0 and 1000 or more revolutions per minute. This permits modifying the shape and consistency of the melted zone in various ways.
  • impurities that may be included in undissolved condition within the melted zone
  • the texture of the zone-melted body to be produced can be improved by imparting vibration to the liquid zone during the processing period.
  • vibrations are produced by a shaker motor 76 Whose shaft ends carry eccentric unbalance masses 77.
  • the shaker motor 76 is mounted on the base plate 15.
  • Apparatus for crucible-free zone melting of rodshaped crystalline material comprising a gas-tight vacuurn enclosure member having means for connection tion with a vacuum pump, axially spaced holders in said vessel for securing the rod material between them, annular electric heating means in said vessel axially surrounding the rod-shaped material, means for displacing said heating means along said axis for Zone melting the rod-shaped material, means for supplying current to said electric heating means, the improvement which comprises the enclosure member providing an enclosure chamber having an inner Width which is a multiple of the diameter of the annular heating means and the distance between the inner wall of the enclosure member and the annular heating means is a multiple of the inner diameter of shaped crystalline material, comprising a gas-tight vacuum enclosure member having means for connection with a vacuum pump, axially spaced holders in said vessel for securing the rod material between them, annular electric heating means in said vessel axially surrounding the rodshaped material, means for displacing said heating means along said axis for zone melting the

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Description

Nov. 9, 1965 R. EMEIS 3,216,805
DEVICE FOR CRUCIBLE-FREE ZONE MELTING Filed Oct. 26, 1961 2 Sheets-Sheet 1 Nov. 9,1965 R. EMEIS 3,216,805
DEVICE FOR CRUCIBLE-FREE ZONE MELTING Filed Oct. 26, 1961 2 Sheets-Sheet 2 first few zone passes. ing the melting zone are again melted into the silicon material of the rod. As a result, new impurities enter United States Patent 3,216,805 DEVICE FGR CRUtIlBLE-FREE ZONE MELTING Reimer Emeis, Ebermannstadt, Upper Franconia, Germany, assignor to Siemens-Schuckertwerke Aktiengesellschaft, Berlin-Siemensstadt, Germany, a corporation of Germany Filed Oct. 26, 1961, Ser. No. 147,799 Claims priority, application Germany, Dec. 30, 1953, S 36,993 2 Claims. (CL 23-473) This application is a continuation-in-part of application Serial No. 409, 610, filed February 11,. 1954, now Patent No. 3,030,194 and relates to a device for the crucible-free zone melting of an elongated rod-shaped body of crystalline substance, preferably semiconductor substance. The crucible-free or floating zone melting is a known type of a zone-melting method and is preferably employed for substances having a very high melting point, such as silicon for example, which would cause difiiculties when employing a melting crucible. However, the method is also suitable for a processing of germanium, aluminum antimonide and the like.
The crucible-free zone melting method consists in firmly clamping the two ends of the rod-shaped body and to liquefy a cross-sectional zone of slight axial thickness by heating without the use of a crucible or the like retaining means. The heating device required for this purpose, and the crystalline rod, are moved relative to each other in the longitudinal direction of the rod, so that the melting zone travels longitudinally through the rod.
In case the method is performed in a vacuum chamber,
a considerably better result can be obtained by means of a device which, according to the invention, has a vacuum' chamber whose width is very large relative to the diameter of the ring-shaped heating device, particularly if a multiple of that diameter. The vacuum chamber width should be at least times the diameter of the rod to be processed. The advantages of such a spacious apparatus was recognized from observations made with a device for crucible-free zone melting employing a quartz tube closely surrounding the semiconductor rod and the heating device, the zone-melting method being performed with a silicon rod under high vacuum. It was found that a precipitation of silicon evaporated out of the melting zone was deposited on the inner wall of the quartz tube. After only a few zone passes this precipitation became so dense that further observation of the travelling melting zone became impossible. For reestablishing the possibility of observation, it would have been necessary to remove the precipitated coating. This, however, would have required to interrupt the processing operation and to open the vacuum chamber. After again closing and sealing the chamber, it would be necessary to first reestablish the vacuum before the processing could be continued.
After a greater number of zone passes, the precipitated coating reached such a thickness that portions thereof sealed off the wall of the quartz tube and dropped down, due to the continuous change of heating when the melting zone passed by and the immediately following cooling. When such scaling occurs at a moment in which the melting zone just passes through a rod location beneath the scaling-off point, the precipitation scales can then enter into the melting zone and contaminate the molten zone because the precipitation also comprises impurity substances, for example those that became evaporated together with the silicon out of the melting zone during the The precipitation scales thus reachinto the zone as Well as into the portion of the silicon rod through which the melting zone will subsequently 3,2 16,805 Patented Nov. 9, 1965 travel. It follows that one of the prime purposes of the crucible-free zone melting, namely the production of extremely pure silicon, can be defeated in some cases when using a relatively narrow vacuum vessel.
The above-described disadvantages are eliminated by giving the vacuum chamber a comparatively large inner width, because then the thickness of the precipitating silicon, for an equal quantity of material vaporized out of a melting zone, is considerably smaller because of the larger area of the inner wall surface. Consequently, the precipitant need be removed only after a long period of op eration and can be undertaken when the vacuum chamber is already opened, for example, when removing a completely processed silicon rod or when inserting a new rod. Furthermore, any portions of the precipitated coating cannot reach the melting zone, even if such portions scale off during the operation, because the radial spacing of the melting zone from the inner wall of the vacuum chamber is too large.
An example of a device according to the invention suitable for the pulling of monocrystals is illustrated on the drawing.
FIG. 1 shows a sectional front view of an embodiment of a complete processing device according to the invention, the section being taken along the line II indicated in FIG. 3;
FIG. 2 shows a side view thereof, also in section, the section being taken along the line IIII in FIG. 3;
FIG. 3 shows a cross section seen from the top along the line III-III in FIG. 1, the bell-shaped housing of the device being removed;
FIGS. 4 and 5 show details relating to the electrical connections and circuits of the device; and
FIGS. 6, 7 and 8 show separately a number of individual parts of the device.
Referring to FIGS. 1 to 8, the rod of semiconductive material to be treated is shown in an intermediate stage of the processing procedure in which this rod has a relatively thick upper portion 11 and a relatively thin lower portion 12 (FIG. 1). That is, the portion 12 has already passed through the zone-melting process so that its cross section has become reduced in comparison with the original cross section of the upper rod portion 11. The material in the melting zone 13 is liquid and forms a drop. A holder 14 for the lower rod portion is revolvably mounted on a base plate 15 and is vacuum-tightly sealed at the base plate. The plate 15 forms the bottom of a recipient within which the process is carried out in vacuum or in an atmosphere of inert gas. To this end, the base plate 15 is provided with a nipple (FIG. 2) for connection to a high-vacuum pump or to a gas tank. The bell 31 of the recipient consists of steel. A cooling coil 32 of copper tubing forms several turns around the bell and is soldered thereto. The cooling coil 32 may be connected to a water supply pipe. The bell is sealed by means of a gasket ring 33 and is held pressed against the base plate 15 by screw clamps 34 (FIG. 1). The base plate 15 has rubber feet 79 resting upon a three-legged support 35 so that the base plate is readily accessible from below. It may be seen from the drawing that the internal diameter of the bell is at least ten times the diameter of heating ring 22.
Two screw spindles 16 and 17 pass revolvably and vacuum-tightly sealed through respective openings of the base plate 15. An internally threaded support 18 of brass, in threaded engagement with the spindle 16, carries a holder 19 for the upper end of rod portion 11. Holder 19 is joined with support 18 by means of an arm 29 consisting preferably of insulating material. Another support 20, also of brass, is mounted on the spindle 17 in threaded engagement therewith. Support 20 carries the heating device. The supports 13 and 20 slide along guiding frames each consisting of two steel rods 46, 47 and 48, 49 respectively, of circular cross section. Two cross bars 50 and 51 interconnect the rods 46 and 47 at both ends respectively. Corresponding cross bars 52 and 53 interconnect the ends of the pair of rods 48 and 49. The rods 48 and 49 that guide the support 20 for the heating device are preferably designed as tubes according to FIG. 6. The upper openings of the tubular rods communicate with each other through a duct in the interior of the cross bar 53. The lower openings are connected through respective bores in base plate 15 with nipples 54 and 55 through which cooling water is circulated through the rods.
In the illustrated embodiment, a ring-shaped heating device, consisting of an annularly bent strip 22 of tungsten, is energized by electric current in the order of magnitude of 100 amps. It will be noted that the heating is by heat radiation, since, as stated above, contact of the molten material with apparatus elements is to be avoided. The temperature of the heater is controlled depending upon the melting point of the semiconductor material. This temperature, for instance, is about 2000 C. for silicon, corresponding to a melting point of ap proximately 1400 C. The melting points for germanium and the semiconductive compounds are lower, in part below 1000" C. so that the temperature of the ring-shaped heater may be correspondingly lower. The liquid zone of the semiconductor rod, therefore, has the melting temperature of the particular substance being processed. The time of the heating treatment results from the velocity at which the heating device is moved along the rod as specified in this disclosure.
Current is supplied to the heater ring 22 by means of terminal lugs 23 integral with the heater ring. The lugs 23 are clamped to the support 20 by means of a copper plate 28 with an intermediate layer of mica. The plate 28 is fastened to support 20 by means of insulated screws. The current-conducting cross section of the terminal lugs 23 can be doubled by back-folding the clamped ends as is apparent from FIG. 5. The support 20 and the plate 28 carry respective terminals 36, 37 for the connection of flexible current supply cables 38 leading to conductor pins 39 (FIG. that extend vacuum-tightly through the base plate 15. The current supply cables are only schematically represented in the drawing (FIG. 5). They consist preferably of uncovered Litz wire with short tubular pieces or beads of glass strung upon them to provide the necessary insulation as well as a sufficient flexibility. The lead-in pins 39 are connected with the high-current output winding of an auxiliary transformer 40 (FIG. 4) having a primary winding energized through a variable autotransformer 41 from the terminals or buses 42 of an alternating current line so that the output voltage can be adjusted between zero and, for instance, volts. The temperature of the heater is thus controlled by the variable autotransformer.
The respective shaft ends 43 and 44 of the threaded spindles 16 and 17 are driven through suitable transmissions, for instance the illustrated worm gears 80 and 81, from small direct- current shunt motors 82, 83. These motors may be mounted on the support 35 in any suitable manner. The ratio of the revolving speeds of motors 82 and 83 is so adjusted that the support 20 moves upwardly at a greater velocity than the support 18. For instance, the heating device 22 and its support 20 may move upwardly at a speed in the order of 0.5 to 5 mm. per minute. When the upper holder 19 and its support 18 are moved upwardly at half the speed of support 20, then the cross section of the lower rod portion 12 becomes about half as large as that of the upper rod portion 11. By a corresponding selection of the speeds, the rod-shaped body being zone-melted can be drawn to a cross section of any desired thinness. The ratio of the revolving speeds may also be adjusted by a mechanical transmission or by an automatic electric control and, if desired, this speed ratio may be varied at will or may be automatically regulated during the zone-melting operation.
Also mounted on support 20, by means of a clamping plate 57, is a guiding device 21 for the free end of the lower rod portion 12. According to FIGS. 7 and 8, the clamping device 21 comprises a holder 56 that forms a semi-annulus about the rod portion 12 and carries two guide fingers 25 and 26 of which one is resiliently displaceable and biased by a pressure spring 27. The guide fingers 25 and 26 may consist of carbon or aluminum oxide. They are preferably cylindrically recessed where they come into slidable engagement with the rod portion 12. The guide fingers maintain the free end of rod portion 12 axially aligned with the heating device and with the upper rod portion 11. However, if the cross section of the treated body is larger than 5 square-millimeters, it is, as a rule, unnecessary to provide additional means for guiding the rod during the processing operations.
Another guiding device 24 is provided for the upper rod portion 11. The guiding device 24 is similar to device 21 and is mounted on support 20 by means of another clamping plate 58. The guiding devices 21 and 24 may also serve as means for supplying an electrical current in the order of a few amperes to be additionally passed through the melting zone 13. To this end, the holders 56, consisting of a conductive material such as brass, are in conductive contact with the clamping plates 57 and 58 also consisting of conductive material, but are insulated from the support 20 and the fastening screws by an intermediate insulating layer of heat-resistant material such as mica. The clamping plates 57 and 58 are provided with terminal screws 59, 60 that are connected by leads 61 to vacuum-tightly sealed lead-in terminals 62 traversing the base plate 15 (FIG. 5). The lead-in terminals 62 are connected to a direct-current or alternatingcurrent source.
The device is further equipped with means for revolving the rod portions 11 and 12. To impart such a revolution to the rod ends, the shaft end 63 of the holder 14, vacuum-tightly journalled to the base plate 15, is coupled by a gear transmission 64 with a drive motor 65. The upper holder 19 is also provided with a shaft end 66 (FIG. 1) which is journalled in the bore of the supporting arm and carries a spur gear 67. Another spur gear 68 is journalled on a supporting arm 69 (FIGS. 2, 3) mounted on support 18. Gears 67 and 68 are continuously in meshing engagement with each other. A shaft 70 with a longitudinal groove 71 (FIGS. 1, 2, 3) passes through a central bore in the hub portion of spur gear 69. A pin 72 screwed into the hub portion of spur gear 68 engages the groove 71, so that spur gear 68 is entrained by the revolving shaft 70 while being capable to slide upwardly and downwardly along the shaft. Shaft 70 has its lower end vacuum-tightly journalled in the base plate 15. The shaft end, extending through the base plate, is connected by a gear transmission 73 with a drive motor 74. The apparatus for rotating the rod ends just described makes it possible to drive the upper rod portion 11 alone or the lower rod portion alone or both rod portions simultaneously, either in the same direction or in opposite directions of revolution, and at any desired speed between 0 and 1000 or more revolutions per minute. This permits modifying the shape and consistency of the melted zone in various ways. It is also possible, for instance, to cause impurities, that may be included in undissolved condition within the melted zone, to migrate due to centrifugal force to the rod surface, from which subsequently such impurities may readily be removed. That is, any undissolved foreign substances in the interior of the melted zone, for instance particles of silicon carbide, having a higher specific gravity than the melted material, when subjected to a sufiiciently high speed of revolution, are moved by centrifugal force to the exterior surface of the body. By subsequent etching of the processed body, such inclusions can be laid open and can easily be removed mechanically, for instance, by scraping.
In certain cases, the texture of the zone-melted body to be produced can be improved by imparting vibration to the liquid zone during the processing period. Such vibrations are produced by a shaker motor 76 Whose shaft ends carry eccentric unbalance masses 77. The shaker motor 76 is mounted on the base plate 15.
It will be obvious to those skilled in the art, upon study of this disclosure, that my invention permits of various modifications other than those specifically illustrated and described, without departing from the essence of my invention and within the scope of the claims annexed hereto.
I claim:
1. Apparatus for crucible-free zone melting of rodshaped crystalline material, comprising a gas-tight vacuurn enclosure member having means for connection tion with a vacuum pump, axially spaced holders in said vessel for securing the rod material between them, annular electric heating means in said vessel axially surrounding the rod-shaped material, means for displacing said heating means along said axis for Zone melting the rod-shaped material, means for supplying current to said electric heating means, the improvement which comprises the enclosure member providing an enclosure chamber having an inner Width which is a multiple of the diameter of the annular heating means and the distance between the inner wall of the enclosure member and the annular heating means is a multiple of the inner diameter of shaped crystalline material, comprising a gas-tight vacuum enclosure member having means for connection with a vacuum pump, axially spaced holders in said vessel for securing the rod material between them, annular electric heating means in said vessel axially surrounding the rodshaped material, means for displacing said heating means along said axis for zone melting the rod shaped material, means for supplying current to said electric heating means, the improvement which comprises the enclosure member providing an enclosure chamber being of steel and having a minimum inner width which is a multiple of the diameter of the annular heating means and the distance between the inner wall of the steel chamber and the annular heating means is a multiple of the inner diameter of the annular heating means, and cooling means for cooling the walls of the enclosure member.
References Cited by the Examiner UNITED STATES PATENTS 2,686,864 8/54 Wroughton et a]. 219-1 2,686,865 8/54 Kelley 2191 2,739,088 3/56 Pfann.
2,809,905 10/57 Davis et a1 148-1 2,904,663 9/59 Emeis et al. 2l9l0.43 2,972,525 2/61 Emeis 23-301 3,060,123 10/62 Theurer 23-301 XR NORMAN YUDKOFF, Primary Examiner.
ANTHONY SCIAMANNA, Examiner.

Claims (1)

1. APPARATUS FOR CRUCIBLE-FREE ZONE MELTING OF RODSHAPED CRYSTALLINE MATERIAL, COMPRISING A GAS-TIGHT VACUUM ENCLOSURE MEMBER HAVING MEANS FOR CONNECTION WITH A VACUUM PUMP, AXIALLY SPACED HOLDERS IN SAID VESSEL FOR SECURING THE ROD MATERIAL BETWEEN THEM, ANNULAR ELECTRIC HEATING MEANS IN SAID VESSEL AXIALLY SURROUNDING THE ROD-SHAPED MATERIAL, MEANS FOR DISPLACING SAID HEATING MEANS ALONG SAID AXIS FOR ZONE MELTING THE ROD-SHAPED MATERIAL, MEANS FOR SUPPLYING CURRENT TO SAID ELECTRIC HEATING MEANS, THE IMPROVEMENT WHICH COMPRISES THE ENCLOSURE MEMBER PROVIDING AN ENCLOSURE CHAMBER HAVING AN INNER WIDTH WHICH IS A MULTIPLE OF THE DIAMETER
US147799A 1953-02-14 1961-10-26 Device for crucible-free zone melting Expired - Lifetime US3216805A (en)

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DES32193A DE1061527B (en) 1953-02-14 1953-02-14 Process for zone-wise remelting of rods and other elongated workpieces
DE1953S0036998 DE975158C (en) 1953-12-30 1953-12-30 Method and device for crucible-free zone melting of an elongated rod-shaped body
DES44099A DE1210415B (en) 1953-02-14 1955-05-26 Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt

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US409420A Expired - Lifetime US3086856A (en) 1953-02-14 1954-02-10 Method and device for the successive zone melting and resolidifying of extremely pure substances
US409610A Expired - Lifetime US3030194A (en) 1953-02-14 1954-02-11 Processing of semiconductor devices
US586125A Expired - Lifetime US2876147A (en) 1953-02-14 1956-05-21 Method of and apparatus for producing semiconductor material
US13309A Expired - Lifetime US3234012A (en) 1953-02-14 1960-03-07 Method for remelting a rod of crystallizable material by crucible-free zonemelting
US147799A Expired - Lifetime US3216805A (en) 1953-02-14 1961-10-26 Device for crucible-free zone melting

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US409420A Expired - Lifetime US3086856A (en) 1953-02-14 1954-02-10 Method and device for the successive zone melting and resolidifying of extremely pure substances
US409610A Expired - Lifetime US3030194A (en) 1953-02-14 1954-02-11 Processing of semiconductor devices
US586125A Expired - Lifetime US2876147A (en) 1953-02-14 1956-05-21 Method of and apparatus for producing semiconductor material
US13309A Expired - Lifetime US3234012A (en) 1953-02-14 1960-03-07 Method for remelting a rod of crystallizable material by crucible-free zonemelting

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CH (2) CH334388A (en)
DE (2) DE1061527B (en)
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3522014A (en) * 1965-11-30 1970-07-28 Siemens Ag Eccentrically rotated rod holder for crucible-free zone melting
US3841845A (en) * 1971-08-27 1974-10-15 Siemens Ag For using sonic vibrations to produce a radially uniform resistance characteristic in a semiconductor crystal
US3994690A (en) * 1974-02-15 1976-11-30 Elphiac Universal apparatus for elaborating semiconductive monocrystals
US4072556A (en) * 1969-11-29 1978-02-07 Siemens Aktiengesellschaft Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE552391A (en) * 1952-08-01
DE975158C (en) * 1953-12-30 1961-09-14 Siemens Ag Method and device for crucible-free zone melting of an elongated rod-shaped body
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
BE562704A (en) * 1956-11-28
GB844813A (en) * 1957-05-01 1960-08-17 Sylvania Electric Prod Zone melting apparatus
DE1169683B (en) * 1957-05-31 1964-05-06 Siemens Ag Method for crucible-free zone melting of a semiconductor rod
DE1238448B (en) * 1957-07-26 1967-04-13 Siemens Ag Method for doping a rod-shaped semiconductor body
DE1121223B (en) * 1957-08-29 1962-01-04 Philips Nv Process for the production of semiconducting bodies for semiconductor arrangements
NL234451A (en) * 1957-12-27
NL126240C (en) * 1958-02-19
BE581195A (en) * 1958-07-30
BE581687A (en) * 1958-08-16
BE582787A (en) * 1958-09-20 1900-01-01
NL244873A (en) * 1958-11-17
DE1203230B (en) * 1958-12-12 1965-10-21 Siemens Ag Process for the production of rods made of semiconductor material that are uniformly doped over their entire length
DE1164681B (en) * 1958-12-24 1964-03-05 Siemens Ag Process for the production of a uniformly doped rod made of semiconductor material by crucible-free zone melting
US3119778A (en) * 1959-01-20 1964-01-28 Clevite Corp Method and apparatus for crystal growth
DE1152269B (en) * 1959-04-28 1963-08-01 Siemens Ag Device for crucible-free zone melting of a semiconductor rod in a vacuum chamber
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
NL252591A (en) * 1959-08-17
NL255530A (en) * 1959-09-11
DE1161043B (en) * 1959-09-15 1964-01-09 Siemens Ag Method and device for reducing the cross section of a semiconductor rod by means of crucible-free zone melting
NL258961A (en) * 1959-12-23
DE1114171B (en) * 1959-12-31 1961-09-28 Siemens Ag Holder for rod-shaped semiconductor material in devices for crucible-free zone melting
US3026188A (en) * 1960-04-11 1962-03-20 Clevite Corp Method and apparatus for growing single crystals
NL264214A (en) * 1960-05-02 1900-01-01
DE1188555B (en) * 1960-05-10 1965-03-11 Wacker Chemie Gmbh Process for the production of highly pure crystalline bodies from nitrides, phosphides or arsenides of III. Main group of the periodic table
US3241925A (en) * 1960-08-19 1966-03-22 Union Carbide Corp Apparatus for growing solid homogeneous compositions
GB919298A (en) * 1960-08-22 1963-02-20 Ass Elect Ind Improvements relating to electronic beam furnaces
NL260045A (en) * 1961-01-13
US3226248A (en) * 1962-03-14 1965-12-28 Texaco Experiment Inc Method of producing refractory monocrystalline boron structures
DE1251272B (en) * 1962-04-18 1967-10-05 N. V. Philips' Gloeilampenrabrieken, Eindhoven (Niederlande) Method and device for producing a rod by drawing it from a melt
US3226193A (en) * 1962-06-21 1965-12-28 Union Carbide Corp Method for growing crystals
NL301284A (en) * 1962-12-10
US3259468A (en) * 1963-05-02 1966-07-05 Monsanto Co Slim crystalline rod pullers with centering means
DE1217926B (en) * 1963-08-17 1966-06-02 Siemens Ag Method for avoiding streaks in metal or semiconductor crystals
DE1251721B (en) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Method for producing semiconductor stalls, preferably semiconductor stalls with adjustable, for example constant, foreign matter concentration
DE1224273B (en) * 1964-06-23 1966-09-08 Siemens Ag Device for crucible-free zone melting
US3231430A (en) * 1964-12-28 1966-01-25 Titanium Metals Corp Conditioning ingots
US3453370A (en) * 1965-06-11 1969-07-01 Us Air Force Continuous floating zone refining system
DE1272886B (en) * 1966-09-24 1968-07-18 Siemens Ag Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
US3515836A (en) * 1968-06-24 1970-06-02 Business Assets Corp Elevator means for a heat scanner device
FR1598493A (en) * 1968-12-18 1970-07-06
US3661599A (en) * 1969-03-25 1972-05-09 Martin Marietta Corp HIGH TEMPERATURE TiC-VC STRUCTURAL MATERIALS
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
US3620682A (en) * 1969-10-31 1971-11-16 Siemens Ag Apparatus for producing rod-shaped members of crystalline material
US3925108A (en) * 1970-11-25 1975-12-09 Gen Electric Method for preparing decomposable materials with controlled resistivity
US4197157A (en) * 1975-03-19 1980-04-08 Arthur D. Little, Inc. Method for forming refractory tubing
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US3939035A (en) * 1971-03-31 1976-02-17 Siemens Aktiengesellschaft Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density
DE2127968A1 (en) * 1971-05-10 1972-11-16 Aktiengesellschaft Brown, Boveri & Cie, Baden (Schweiz) Process and device for influencing the crystalline structure of alloys and application of this process
CA957180A (en) * 1971-06-16 1974-11-05 Massachusetts, Institute Of Technology Alloy compositions containing non-dendritic solids and process for preparing and casting same
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
DE2319700C3 (en) * 1973-04-18 1980-11-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for influencing the radial resistance curve in a semiconductor single crystal rod during crucible-free zone melting and devices for carrying out the process
US3988197A (en) * 1973-11-22 1976-10-26 Siemens Aktiengesellschaft Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
US3996011A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
USRE29825E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3936346A (en) * 1973-12-26 1976-02-03 Texas Instruments Incorporated Crystal growth combining float zone technique with the water cooled RF container method
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
US4186173A (en) * 1975-04-11 1980-01-29 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4078897A (en) * 1975-04-11 1978-03-14 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
JPS604599B2 (en) * 1976-03-17 1985-02-05 株式会社東芝 Method for producing lithium tantalate single crystal
DE2640377A1 (en) * 1976-09-08 1978-03-09 Leybold Heraeus Gmbh & Co Kg DEVICE FOR ZONE PULLING OF SINGLE CRYSTAL BARS
JPS53135037A (en) * 1977-04-28 1978-11-25 Nichiden Kikai Kk Heating apparatus
US4218282A (en) * 1977-06-17 1980-08-19 Kabushiki Kaisha Suwa Seikosha Method of preparation of chrysoberyl and beryl single crystals
DK371977A (en) * 1977-08-22 1979-02-23 Topsil As METHOD AND APPLIANCE FOR REFINING SALMON MATERIAL
US4257841A (en) * 1978-01-06 1981-03-24 Monsanto Company Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod
US4317799A (en) * 1979-03-12 1982-03-02 Mobil Tyco Solar Energy Corporation Belt-roller crystal pulling mechanism
FR2455921A2 (en) * 1979-05-08 1980-12-05 Anvar Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps
US4565600A (en) * 1981-04-27 1986-01-21 Criceram Processes for the continuous preparation of single crystals
US4615760A (en) * 1983-01-12 1986-10-07 Dressler Robert F Suppression or control of liquid convection in float zones in a zero-gravity environment by viscous gas shear
EP0221051A1 (en) * 1985-04-16 1987-05-13 Energy Materials Corporation Method and apparatus for growing single crystal bodies
JPS6259594A (en) * 1985-09-11 1987-03-16 Sumitomo Electric Ind Ltd Pulling up method of crystal and apparatus therefor
US4609402A (en) * 1985-10-28 1986-09-02 Iowa State University Research Foundation, Inc. Method of forming magnetostrictive rods from rare earth-iron alloys
US4828608A (en) * 1987-05-14 1989-05-09 Indium Corporation Of America Process for ultrapurification of indium
JPH078495B2 (en) * 1990-11-29 1995-02-01 信越半導体株式会社 Single crystal pulling device automatic cutting device for single crystal pulling device
DE69213059T2 (en) * 1991-03-22 1997-04-10 Shinetsu Handotai Kk Process for growing a single-crystal silicon rod
JP3237564B2 (en) * 1997-03-12 2001-12-10 株式会社村田製作所 Single crystal growth method
FR2834654B1 (en) * 2002-01-16 2004-11-05 Michel Bruel PROCESS FOR TREATING A PART WITH A VIEW TO MODIFYING AT LEAST ONE OF ITS PROPERTIES

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
US2739088A (en) * 1951-11-16 1956-03-20 Bell Telephone Labor Inc Process for controlling solute segregation by zone-melting
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
US2904663A (en) * 1957-11-15 1959-09-15 Siemens Ag Apparatus for zone melting of semiconductor material
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US3060123A (en) * 1952-12-17 1962-10-23 Bell Telephone Labor Inc Method of processing semiconductive materials

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
DE42294C (en) * HEES 8c WILBERG in Magdeburg, Kronprinzenstr, 1 Block movement on meat weighing machines
US2254306A (en) * 1939-03-18 1941-09-02 Nat Cylinder Gas Co Apparatus for flame hardening
US2419373A (en) * 1943-09-10 1947-04-22 Metals & Controls Corp Apparatus for vibrating metals during casting
US2623253A (en) * 1948-10-27 1952-12-30 Nat Lead Co Rod casting device
DE804840C (en) * 1948-10-28 1951-04-30 Ernst Teschner Dipl Ing Process for the continuous casting of hollow strings
US2553921A (en) * 1949-04-12 1951-05-22 Jordan James Fernando Continuous casting apparatus
BE500569A (en) * 1950-01-13
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity
US2770022A (en) * 1952-12-08 1956-11-13 Joseph B Brennan Method of continuously casting molten metal
BE525102A (en) * 1952-12-17 1900-01-01
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
DE1017795B (en) * 1954-05-25 1957-10-17 Siemens Ag Process for the production of the purest crystalline substances, preferably semiconductor substances
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
US2739088A (en) * 1951-11-16 1956-03-20 Bell Telephone Labor Inc Process for controlling solute segregation by zone-melting
US3060123A (en) * 1952-12-17 1962-10-23 Bell Telephone Labor Inc Method of processing semiconductive materials
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
US2904663A (en) * 1957-11-15 1959-09-15 Siemens Ag Apparatus for zone melting of semiconductor material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3522014A (en) * 1965-11-30 1970-07-28 Siemens Ag Eccentrically rotated rod holder for crucible-free zone melting
US4072556A (en) * 1969-11-29 1978-02-07 Siemens Aktiengesellschaft Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same
US3841845A (en) * 1971-08-27 1974-10-15 Siemens Ag For using sonic vibrations to produce a radially uniform resistance characteristic in a semiconductor crystal
US3994690A (en) * 1974-02-15 1976-11-30 Elphiac Universal apparatus for elaborating semiconductive monocrystals
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements

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GB809163A (en) 1959-02-18
NL127664C (en) 1969-12-15
US3086856A (en) 1963-04-23
CH334388A (en) 1958-11-30
DE1061527B (en) 1959-07-16
FR69746E (en) 1958-11-19
US2876147A (en) 1959-03-03
NL127108C (en) 1969-09-15
DE1210415B (en) 1966-02-10
US3030194A (en) 1962-04-17
NL120780C (en) 1966-05-16
CH348262A (en) 1960-08-15
US3234012A (en) 1966-02-08
NL6601448A (en) 1966-05-25
GB775986A (en) 1957-05-29
NL291972A (en) 1965-07-12
FR1107076A (en) 1955-12-28
NL291970A (en) 1965-07-12

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