US2763581A - Process of making p-n junction crystals - Google Patents

Process of making p-n junction crystals Download PDF

Info

Publication number
US2763581A
US2763581A US322439A US32243952A US2763581A US 2763581 A US2763581 A US 2763581A US 322439 A US322439 A US 322439A US 32243952 A US32243952 A US 32243952A US 2763581 A US2763581 A US 2763581A
Authority
US
United States
Prior art keywords
layer
type semiconductor
type
semiconductor compound
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US322439A
Inventor
Freedman George
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Manufacturing Co filed Critical Raytheon Manufacturing Co
Priority to US322439A priority Critical patent/US2763581A/en
Application granted granted Critical
Publication of US2763581A publication Critical patent/US2763581A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Definitions

  • This invention relates to a method of growing junction crystals and to the structure of such crystals.
  • This invention involves a novel method of making single crystal semiconductor alloys of the p-n type, p-np type, np-n type, or any combinations thereof, by alternately passing gaseous semiconductor compounds containing nor p-type impurities over a heated member and depositing semiconductor alloys on the member.
  • any combination of coaxial layers of n-type and p-type semiconductor alloys may be formed on the member.
  • Such a process may be readily controlled to produce a single coaxial crystal having uniform structure and large or small n-type or p-type layers.
  • the crystal grown may also be cut into any desired number of elements.
  • Fig. l is a diagram illustrating apparatus which may be employed to produce semiconductor junction crystals in accordance with this invention.
  • Fig. 2 is an enlarged view of a wire member on which coaxial layers of pand n-type semiconductor alloys are deposited to form an n-p-n type junction crystal.
  • a support member 1, on which the junction crystal 2 is'to be grown, is connected to insulated leads 3 and 4 by metal clamps 5 and 6.
  • the support member 1 shouldbe of single crystal structure, such as a single crystal tungsten or germanium wire, to act as a seed crystal on which the junction crystal 2 will grow.
  • the support member 1 should also be of somewhat similar atomic crystalline structure to that of the semiconductor alloy to be deposited for the single crystal to grow uniformly.
  • a germanium wire of single crystal structure is ideal as a support member, but a tungsten wire can be used successfully as could any wire having a crystal structure and lattice parameter which do not depart to a great degree from that of germanium, and a melting point above that of the germanium compounds to be decomposed.
  • support member 1 may also be used as an electrical connection once the crystal is deposited.
  • the support member 1 is suspended in a glass reaction chamber 7 having removable base 8 and seals 9 and 10 through which insulated leads 3 and 4 pass.
  • the insulated leads 3 and 4 are connected to an electrical source 11 and to a potentiometer 12.
  • an electrical current controlled by the potentiometer 12 is passed through the support member 1, thereby heating the support member to the proper temperature. That temperature must be maintained below the melting point of the alloy to be deposited on the support member 1, yet must be above the temperature of decomposition of the 2,763,581 Patented Sept. 18, 1956 vaporous semiconductor compounds 14- and 15. However, the exact temperature is not critical.
  • a temperature of 900 degrees centigrade for the tungsten wire was used successfully. However, in most instances, a lower temperature is desirable in order to insure that high crystalline stability is obtained.
  • the semiconductor compounds 14 and 15 are contained in retorts 16 and 17, and the compounds are heated by sources 18 and 19 until they are in the vapor phase.
  • the term semiconductor compound is used to denote a mixture of two compounds, one of which contains a semiconductor element, such as germanium or silicon, and the other of which contains a trace of an n-type or ptype impurity element.
  • the n-type impurity element may be antimony, arsenic, or phosphorous
  • the p-type impurity element may be gallium, aluminum, boron, or indium.
  • semiconductor compound 14 may be a mixture of germanium tetrachloride and antimony pentachloride in which germanium is the semiconductor element and the n-type impurity element is antimony. Since the boiling point of antimony pentachloride is degrees centigrade, and that of germanium tetrachloride is 83 degrees centigrade, the semiconductor compound 14 should be heated to a temperature slightly above 140 degrees centigrade to place the mixture in the vapor phase.
  • semiconductor compound 15 may be a mixture of germanium tetrachloride and gallium trichloride in which germanium is the semiconductor element and the .p-type impurity element is gallium.
  • Retort 17 should be heated to a temperature slightly above 202 degrees centigrade (the boiling point of gallium trichloride) to vaporize semiconductor compound 15. Hydrides, rather than halides, are preferred in this operation because the hydrid es generally decompose at lower temperatures where better crystalline stability is obtained.
  • semiconductor compounds 14 and 15 are in the vapor phase, they are alternately pushed by an inert gas 20, for example, argon, into the reaction chamber 7 where they form the n-type and p-type layers of the junction crystal 2.
  • an inert gas 20 for example, argon
  • gaseous semiconductor compound 14 comes in contact with heated support member 1 and is decomposed and deposited on the support member 1 to form a coaxial crystalline layer thereon.
  • Fig. 2 shows the support member 1 with coaxial p-type and n-type layers formed thereon.
  • the n-type layer is a semiconductor alloy composed of germanium and a trace of antimony
  • the p-type layer is a semiconductor alloy composed of germanium and a trace of gallium.
  • valves 22 and 23 are closed, and the reaction chamber 7 is flushed out with inert gas 20 by opening valve 26.
  • first closing valve 26 the same procedure used in regard to semiconductor compound 14 is repeated in regard to semiconductor compound 15.
  • Valves 27 and 28 are opened and vaporous semiconductor compound 15 is pushed through tube 29 into the reaction chamber 7 so that a second coaxial layer of semiconductor alloy is deposited on top of the first layer of semiconductor alloy.
  • the second layer of semiconductor alloy is composed of germanium and a trace of gallium to form a p-type layer but. can be varied in composition as desired.
  • any undeposited semiconductor compounds are pushed by the inert gas 20 through opening 31 in the bottom of the reaction chamber 7 and are collected in a water-cooled condensing tube 32.
  • the inert gas 2! passes out through tube 33 and is collected in a chamber'not shown.
  • Fig. 2 also shows a third layer labeled n-type layer deposited on top of an intermediate layer labeled p-type layer. This third layer can be deposited by repeating the process described in connection with the depositing of semiconductor compound 14. T-hus an n-p-n type junction crystal can be grown, as is shown in Fig. 2.
  • the layers in Fig. 2 may also be limited to two layers, thereby comprising an n-p type crystal.
  • a p-n-p type crystal or any combination of n-type or p-type coaxial crystal layers, can be grown, as well as the np-n type shown in Fig. 2.
  • alternate steps used in the specification and claims, is intended to include the various orders in which the coaxial layers may be deposited by alternating the steps in the process, as described above.
  • a small crystal having a very thin intermediate layer may be grown. For example, it has been determined that, if a wire support member of .0002 inch. diameter is used, a crystal having a diameter of about .001 inch can be grown. Since small transistor and diode devices are often desirable, this is an important feature of this novel method of making single crystal semiconductor alloys.
  • the method of making single crystal junction crystals which consists in vaporizing an n-type semiconductor compound comprised of germanium tetrachloride and antimony pentachloride, vaporizing a p-type semiconductor compound comprised of germanium tetra-chloride and gallium trichloride, passing said n-type semiconductor compound in the vapor phase onto a heated single crystal member, depositing a layer of n-type semiconductor alloy comprised of germanium and antimony on said member, passing saidp-t'ype semiconductor compound in the vapor phase onto a heated member, depositing a layer of p-type semiconductor alloy comprised of germanium and gallium on said member in alternate steps to form a junction crystal, interrupting the deposition of at least one of said layers at a desired time, placing an electrical conductor in contact with said-one layer, and resuming the deposition of one layer whereby said' conductor is firmly embedded within said one layer.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

p 1956 G. FREEDMAN amwm PROCESS OF MAKING P-N JUNCTION CRYSTALS Filed Nov. 25, 1952 EXHAUST H20 OUT Q 3 a i. L a 3 a: m 0. 3 t ln 1 '7 re 9,
INVENTI? GEORGE FREEDMA/v TTORNEV United States Patent 2,763,581 rnocnss or MAKING P-N JUNCTION CRYSTALS George Freedman, Newton, Mass., assignor to Raytheon Manufacturing Company, Newton, Mesa, :1 corporation of Delaware Application November 25, 1952, Serial No. 322,439
7 Claims. (Cl. 1481.5)
This invention relates to a method of growing junction crystals and to the structure of such crystals.
in the production of transistors and diode devices, there is the problem of making single crystal alloysfrom semiconductor materials in a closely-controlled operation. This invention involves a novel method of making single crystal semiconductor alloys of the p-n type, p-np type, np-n type, or any combinations thereof, by alternately passing gaseous semiconductor compounds containing nor p-type impurities over a heated member and depositing semiconductor alloys on the member. By this method, any combination of coaxial layers of n-type and p-type semiconductor alloys may be formed on the member. Such a process may be readily controlled to produce a single coaxial crystal having uniform structure and large or small n-type or p-type layers. The crystal grown may also be cut into any desired number of elements.
The invention and the above-noted and other features thereof will be understood more clearly and fully from the following detailed description with reference to the accompanying drawing in which:
Fig. l is a diagram illustrating apparatus which may be employed to produce semiconductor junction crystals in accordance with this invention; and
Fig. 2 is an enlarged view of a wire member on which coaxial layers of pand n-type semiconductor alloys are deposited to form an n-p-n type junction crystal.
Referring now to the apparatus illustrated in Fig. 1, a support member 1, on which the junction crystal 2 is'to be grown, is connected to insulated leads 3 and 4 by metal clamps 5 and 6. The support member 1 shouldbe of single crystal structure, such as a single crystal tungsten or germanium wire, to act as a seed crystal on which the junction crystal 2 will grow. The support member 1 should also be of somewhat similar atomic crystalline structure to that of the semiconductor alloy to be deposited for the single crystal to grow uniformly. Therefore, when germanium alloys are being deposited, a germanium wire of single crystal structure is ideal as a support member, but a tungsten wire can be used successfully as could any wire having a crystal structure and lattice parameter which do not depart to a great degree from that of germanium, and a melting point above that of the germanium compounds to be decomposed. It should also be noted that support member 1 may also be used as an electrical connection once the crystal is deposited.
The support member 1 is suspended in a glass reaction chamber 7 having removable base 8 and seals 9 and 10 through which insulated leads 3 and 4 pass. The insulated leads 3 and 4 are connected to an electrical source 11 and to a potentiometer 12. By closing switch 13, an electrical current controlled by the potentiometer 12 is passed through the support member 1, thereby heating the support member to the proper temperature. That temperature must be maintained below the melting point of the alloy to be deposited on the support member 1, yet must be above the temperature of decomposition of the 2,763,581 Patented Sept. 18, 1956 vaporous semiconductor compounds 14- and 15. However, the exact temperature is not critical. For example, in the case illustrated below using a tungsten wire as the support member and germanium tetrachloride as the semiconductor compound, a temperature of 900 degrees centigrade for the tungsten wire was used successfully. However, in most instances, a lower temperature is desirable in order to insure that high crystalline stability is obtained.
The semiconductor compounds 14 and 15 are contained in retorts 16 and 17, and the compounds are heated by sources 18 and 19 until they are in the vapor phase. The term semiconductor compound is used to denote a mixture of two compounds, one of which contains a semiconductor element, such as germanium or silicon, and the other of which contains a trace of an n-type or ptype impurity element. The n-type impurity element may be antimony, arsenic, or phosphorous, and the p-type impurity element may be gallium, aluminum, boron, or indium. For example, semiconductor compound 14 may be a mixture of germanium tetrachloride and antimony pentachloride in which germanium is the semiconductor element and the n-type impurity element is antimony. Since the boiling point of antimony pentachloride is degrees centigrade, and that of germanium tetrachloride is 83 degrees centigrade, the semiconductor compound 14 should be heated to a temperature slightly above 140 degrees centigrade to place the mixture in the vapor phase. Likewise, semiconductor compound 15 may be a mixture of germanium tetrachloride and gallium trichloride in which germanium is the semiconductor element and the .p-type impurity element is gallium. Retort 17 should be heated to a temperature slightly above 202 degrees centigrade (the boiling point of gallium trichloride) to vaporize semiconductor compound 15. Hydrides, rather than halides, are preferred in this operation because the hydrid es generally decompose at lower temperatures where better crystalline stability is obtained.
After semiconductor compounds 14 and 15 are in the vapor phase, they are alternately pushed by an inert gas 20, for example, argon, into the reaction chamber 7 where they form the n-type and p-type layers of the junction crystal 2. This is accomplished by opening valves 21, 22, and 23 so that the inert gas 20, which is under pressure, flows through tube 24 into retort 16 where it pushes vaporous semiconductor compound 14 through tube 25 and into reaction chamber 7. There gaseous semiconductor compound 14 comes in contact with heated support member 1 and is decomposed and deposited on the support member 1 to form a coaxial crystalline layer thereon. Fig. 2 shows the support member 1 with coaxial p-type and n-type layers formed thereon. In the example described above, the n-type layer is a semiconductor alloy composed of germanium and a trace of antimony, and the p-type layer is a semiconductor alloy composed of germanium and a trace of gallium. These alloys can be changed by changing the composition of the p-type and n-type semiconductor compounds.
After depositing the first layer as desired, valves 22 and 23 are closed, and the reaction chamber 7 is flushed out with inert gas 20 by opening valve 26. After first closing valve 26, the same procedure used in regard to semiconductor compound 14 is repeated in regard to semiconductor compound 15. Valves 27 and 28 are opened and vaporous semiconductor compound 15 is pushed through tube 29 into the reaction chamber 7 so that a second coaxial layer of semiconductor alloy is deposited on top of the first layer of semiconductor alloy. As stated above, in the given example, the second layer of semiconductor alloy is composed of germanium and a trace of gallium to form a p-type layer but. can be varied in composition as desired. Any undeposited semiconductor compounds are pushed by the inert gas 20 through opening 31 in the bottom of the reaction chamber 7 and are collected in a water-cooled condensing tube 32. The inert gas 2!) passes out through tube 33 and is collected in a chamber'not shown.
It should be noted that, before the second layer 18 completely deposited, the process described above can be stopped, and an electrical conductor (see Fig. 2, Element 30) may be connected by any appropriate means to the second coaxial layer. The process may then be continnod to bind the electrical conductor 36 firmly within the layer. Fig. 2 also shows a third layer labeled n-type layer deposited on top of an intermediate layer labeled p-type layer. This third layer can be deposited by repeating the process described in connection with the depositing of semiconductor compound 14. T-hus an n-p-n type junction crystal can be grown, as is shown in Fig. 2. The layers in Fig. 2 may also be limited to two layers, thereby comprising an n-p type crystal. By alternating the steps described, a p-n-p type crystal, or any combination of n-type or p-type coaxial crystal layers, can be grown, as well as the np-n type shown in Fig. 2. The term alternate steps, used in the specification and claims, is intended to include the various orders in which the coaxial layers may be deposited by alternating the steps in the process, as described above.
In addition to the advantages previously described, a small crystal having a very thin intermediate layer (see the p-type layer in Fig. 2) may be grown. For example, it has been determined that, if a wire support member of .0002 inch. diameter is used, a crystal having a diameter of about .001 inch can be grown. Since small transistor and diode devices are often desirable, this is an important feature of this novel method of making single crystal semiconductor alloys.
This invention is not limited to the particular details of construction, materials and processes described, as many equivalents will suggest themselves to those skilled in the art. It is, accordingly, desired that the appended claims be given a broad interpretation commensurate with he scope of the invention within the art.
What is claimed is:
1. The method of making single crystal junction crystals which consists in vaporizing a p-type semiconductor compound and an n-type semiconductor compound, passing said p-ty pe semiconductor compound in a gaseous state onto a heated single crystal member, depositing a layer of p-type semiconductor alloy on said member, passing said n-type semiconductor compound in a gaseous state onto said member, depositing a layer of n-type semiconductor alloy on said member in alternate steps to form a junction crystal, interrupting the deposition of at least one of said layers at a desired time, placing an electrical conductor in contact with said one layer, and resuming the deposition of one layer whereby said conductor is firmly embedded within said one layer.
2. The method of making single crystal junction crystals which consists in vaporizing an n-type semiconductor compound and a p-type semiconductor compound, passing said n-type semiconductor compound in a gaseous state into a chamber and onto a heated single crystal member, depositing a layer of n-type semiconductor alloy on said member, flushing said chamber with an inert gas, passing said p-type semiconductor compound in a gaseous state into said chamber and onto said member, depositing a layer of p-type semiconductor alloy on said member in alternate steps to form a junction crystal, interrupting the deposition of at least one of said layers at a desired time, placing an electrical conductor in contact with said one layer, and resuming the deposition of one layer whereby said conductor is firmly embedded within said one layer.
3. The method of making single crystal junction crystals which consists in vaporizing ann-type semiconductor compound and a p-type semiconductor compound, passing said n-stype semiconductor compound in the vapor phase onto a single crystal supporting member, decomposing said n-type semiconductor compound on the surface of said member whereby a layer of n-type semiconductor alloy is deposited upon said member, passing said p-type semiconductor compound in the vapor phase onto said member, decomposing said p-type semiconductor compound on the surface of said member whereby a layer of p-type semiconductor alloy is deposited upon said member in alternate steps to form a junction crystal, interrupting the deposition of at least one of said layers at a desired time, placing an electrical conductor in contact with said one layer, and resuming the deposition of one layer whereby said conductor is firmly embedded within said one layer.
4. The method of making single crystal junction crystals which consist in vaporizing an n-type semiconductor compound comprised of an element selected from the group consisting of germanium and silicon and an impurity selected from the group consisting of arsenic, antimony, and phosphorus, vaporizing a p-type semiconductor compound comprised of an element selected from the group consisting of germanium and silicon and an impurity selected from the group consisting of gallium, aluminum, boron, and indium, passing said n-type semiconductor compound in the vapor phase onto a heated single crystal member, depositing a layer of n-type semiconductor alloy on said member, passing said p-type semiconductor compound in the vapor phase onto said member, depositing a layer of p-type semiconductor alloy on said member in alternate steps to form a junction crystal, interrupting the deposition of at least one of said layers at a desired time, placing an electrical conductor in contact with said one layer, and resuming the deposition of one layer whereby said conductor is firmly embedded within said one layer.
5. The method of making single crystal junction crystals which consists in vaporizing an n-type semiconductor compound comprised of germanium tetrachloride and antimony pentachloride, vaporizing a p-type semiconductor compound comprised of germanium tetra-chloride and gallium trichloride, passing said n-type semiconductor compound in the vapor phase onto a heated single crystal member, depositing a layer of n-type semiconductor alloy comprised of germanium and antimony on said member, passing saidp-t'ype semiconductor compound in the vapor phase onto a heated member, depositing a layer of p-type semiconductor alloy comprised of germanium and gallium on said member in alternate steps to form a junction crystal, interrupting the deposition of at least one of said layers at a desired time, placing an electrical conductor in contact with said-one layer, and resuming the deposition of one layer whereby said' conductor is firmly embedded within said one layer.
6. The method of making single crystal junction crystals which consists in vaporizing a p-typesemiconductor compound and an n-type semiconductor compound, passing said p-type semiconductor compound in a gaseous state onto a heated single crystal member, depositing a layer of p-type semiconductor alloy on said member, passing said n-type semiconductor compound in a gaseous state onto said member, deposit-ing a layer of n-type semiconductor alloy on said member, again passing said p-Itype semiconductor compound in a gaseous state onto a heated member, depositing a layer of p-t'ype semiconductor alloy on said member to form a p-n-p junction crystal, interrupting the deposition of at least one of said layers at a desired time, placing an electrical conductor in contact with said one layer, and resuming the deposition of one layer whereby said conductor is firmly embedded within said one layer.
7. The method of making single crystal junction crystals' whichconsist in vaporizing an n-type semiconductor compound and a p-type semiconductor compound, passing said n-type semiconductor compound in a gaseous state onto a heated single crystal member, depositing 8. References Cited in the file of this patent layer of n-type semiconductor alloy on said member, passing said p-type semiconductor compound in a gaseous UNITED STATES PATENTS state onto said member, depositing a layer of p-type semi- 2,556,711 Teal June 12, 1951 conductor alloy on said member, again passing said n-type 5 2,569,347 Shockley Sept. 25, 1951 semiconductor compound in a gaseous state onto a heated 2,597,028 Pfann May 20, 1952 member, depositing a layer of n-type semiconductor alloy 2,602,763 Scaff et al. July 8, 1952 on said member to form an n-p-n type junction crystal, 2,629,672 Sparks Feb. 24, 1953 interrupting the deposition of at least one of said layers 2,644,852 Dunlap July 7, 1953 at a desired time, placing an electrical conductor in con- 10 2,655,625 Burton Oct. 13, 1953 tact with said one layer, and resuming the deposition of 2,701,216 Seller Feb. 1, 1955 one layer whereby said conductor is firmly embedded 2,703,296 Teal Mar. 1, 1955 Within said one layer.

Claims (1)

1. THE METHOD OF MAKING SINGLE CRYSTAL JUNCTION CRYSTALS WHICH CONSISTS IN VAPORIZING A P-TYPE SEMICONDUCTOR COMPOUND AND AN N-TYPE SEMICONDUCTOR COMPOUND, PASSING SAID P-TYPE SEMICONDUCTOR COMPOUND IN A GASEOUS STATE ONTO A HEATED SINGLE CRYSTAL MEMBER, DEPOSITING A LAYER OF P-TYPE SEMICONDUCTOR ALLOY ON SAID MEMBER, PASSING SAID N-TYPE SEMICONDUCTOR COMPOUND IN A GASEOUS STATE ONTO SAID MEMBER, DEPOSITING LAYER OF N-TYPE SEMICONDUCTOR ALLOY ON SAID MEMBER IN ALTERNATE STEPS TO FORM A JUNCTION CRYSTAL, INTERRUPTING THE DEPOSITION OF AT LEAST ONE OF SAID LAYERS AT A DESIRED TIME, PLACING AN ELECTRICAL CONDUCTOR IN CONTACT WITH SAID ONE LAYER, AND RESUMING THE DEPOSITION OF ONE LAYER WHEREBY SAID CONDUCTOR IS FIRMLY EMBEDDED WITHIN SAID ONE LAYER.
US322439A 1952-11-25 1952-11-25 Process of making p-n junction crystals Expired - Lifetime US2763581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US322439A US2763581A (en) 1952-11-25 1952-11-25 Process of making p-n junction crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US322439A US2763581A (en) 1952-11-25 1952-11-25 Process of making p-n junction crystals

Publications (1)

Publication Number Publication Date
US2763581A true US2763581A (en) 1956-09-18

Family

ID=23254894

Family Applications (1)

Application Number Title Priority Date Filing Date
US322439A Expired - Lifetime US2763581A (en) 1952-11-25 1952-11-25 Process of making p-n junction crystals

Country Status (1)

Country Link
US (1) US2763581A (en)

Cited By (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2827403A (en) * 1956-08-06 1958-03-18 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials
US2890359A (en) * 1953-06-13 1959-06-09 Philips Corp Camera tube
US2890976A (en) * 1954-12-30 1959-06-16 Sprague Electric Co Monocrystalline tubular semiconductor
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
US2898248A (en) * 1957-05-15 1959-08-04 Ibm Method of fabricating germanium bodies
US2910394A (en) * 1953-10-02 1959-10-27 Int Standard Electric Corp Production of semi-conductor material for rectifiers
US2970111A (en) * 1958-09-20 1961-01-31 Siemens Ag Method of producing a rod of lowohmic semiconductor material
US2993762A (en) * 1956-10-16 1961-07-25 Int Standard Electric Corp Methods of producing silicon of high purity
US2994621A (en) * 1956-03-29 1961-08-01 Baldwin Piano Co Semi-conductive films and methods of producing them
US2999735A (en) * 1959-06-11 1961-09-12 Siemens Ag Method and apparatus for producing hyper-pure semiconductor material, particularly silicon
US3000768A (en) * 1959-05-28 1961-09-19 Ibm Semiconductor device with controlled zone thickness
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
US3014791A (en) * 1958-10-01 1961-12-26 Merck & Co Inc Pyrolysis apparatus
US3015590A (en) * 1954-03-05 1962-01-02 Bell Telephone Labor Inc Method of forming semiconductive bodies
US3021197A (en) * 1956-11-20 1962-02-13 Olin Mathieson Preparation of diborane
US3030189A (en) * 1958-05-19 1962-04-17 Siemens Ag Methods of producing substances of highest purity, particularly electric semiconductors
US3039857A (en) * 1960-07-26 1962-06-19 Condit Ralph Howell Apparatus for growing pure crystals
US3042494A (en) * 1955-11-02 1962-07-03 Siemens Ag Method for producing highest-purity silicon for electric semiconductor devices
US3053638A (en) * 1959-11-02 1962-09-11 Siemens Ag Method and apparatus for producing hyperpure silicon rods
US3069244A (en) * 1959-07-17 1962-12-18 Int Standard Electric Corp Production of silicon
US3098774A (en) * 1960-05-02 1963-07-23 Mark Albert Process for producing single crystal silicon surface layers
US3099534A (en) * 1956-06-25 1963-07-30 Siemens Ag Method for production of high-purity semiconductor materials for electrical purposes
DE1155916B (en) * 1959-10-09 1963-10-17 Siemens Ag Process for the production of disk-shaped silicon or germanium bodies
US3125533A (en) * 1961-08-04 1964-03-17 Liquid
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member
US3138435A (en) * 1961-06-26 1964-06-23 Gen Electric Deposition apparatus and method for forming a pyrolytic graphite article
US3146123A (en) * 1954-05-18 1964-08-25 Siemens Ag Method for producing pure silicon
US3147141A (en) * 1959-05-04 1964-09-01 Ishizuka Hiroshi Apparatus for the manufacture of high purity elemental silicon by thermal decomposition of silane
US3148094A (en) * 1961-03-13 1964-09-08 Texas Instruments Inc Method of producing junctions by a relocation process
US3151006A (en) * 1960-02-12 1964-09-29 Siemens Ag Use of a highly pure semiconductor carrier material in a vapor deposition process
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
US3168423A (en) * 1962-03-15 1965-02-02 Siemens Ag Method of producing monocrystalline wafers from the vaporous phase with alternative cooling and intermediate holding steps
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
US3172791A (en) * 1960-03-31 1965-03-09 Crystallography orientation of a cy- lindrical rod of semiconductor mate- rial in a vapor deposition process to obtain a polygonal shaped rod
US3172857A (en) * 1960-06-14 1965-03-09 Method for probucmg homogeneously boped monocrystalline bodies of ele- mental semiconductors
US3184348A (en) * 1960-12-30 1965-05-18 Ibm Method for controlling doping in vaporgrown semiconductor bodies
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
US3190773A (en) * 1959-12-30 1965-06-22 Ibm Vapor deposition process to form a retrograde impurity distribution p-n junction formation wherein the vapor contains both donor and acceptor impurities
US3192072A (en) * 1960-12-08 1965-06-29 Slemens & Halske Ag Method of pulling a dendritic crystal from a vapor atmosphere
US3201664A (en) * 1961-03-06 1965-08-17 Int Standard Electric Corp Semiconductor diode having multiple regions of different conductivities
US3206406A (en) * 1960-05-09 1965-09-14 Merck & Co Inc Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals
US3208888A (en) * 1960-06-13 1965-09-28 Siemens Ag Process of producing an electronic semiconductor device
US3212939A (en) * 1961-12-06 1965-10-19 John L Davis Method of lowering the surface recombination velocity of indium antimonide crystals
US3224913A (en) * 1959-06-18 1965-12-21 Monsanto Co Altering proportions in vapor deposition process to form a mixed crystal graded energy gap
US3235418A (en) * 1962-06-14 1966-02-15 Siemens Ag Method for producing crystalline layers of high-boiling substances from the gaseous phase
US3261726A (en) * 1961-10-09 1966-07-19 Monsanto Co Production of epitaxial films
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
US3271631A (en) * 1962-05-08 1966-09-06 Ibm Uniaxial crystal signal device
US3271208A (en) * 1960-12-29 1966-09-06 Merck & Co Inc Producing an n+n junction using antimony
US3297501A (en) * 1963-12-31 1967-01-10 Ibm Process for epitaxial growth of semiconductor single crystals
US3299329A (en) * 1963-07-05 1967-01-17 Westinghouse Electric Corp Semiconductor structures providing both unipolar transistor and bipolar transistor functions and method of making same
US3323954A (en) * 1963-04-19 1967-06-06 Philips Corp Method of producing doped semiconductor material and apparatus for carrying out the said methods
US3330251A (en) * 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
US3335697A (en) * 1954-05-18 1967-08-15 Siemens Ag Apparatus for vapor deposition of silicon
US3341376A (en) * 1960-04-02 1967-09-12 Siemens Ag Method of producing crystalline semiconductor material on a dendritic substrate
US3517643A (en) * 1968-11-25 1970-06-30 Sylvania Electric Prod Vapor deposition apparatus including diffuser means
US3617399A (en) * 1968-10-31 1971-11-02 Texas Instruments Inc Method of fabricating semiconductor power devices within high resistivity isolation rings
US3880112A (en) * 1971-10-20 1975-04-29 Commissariat Energie Atomique Device for the preparation of thin films
USB561405I5 (en) * 1975-03-24 1976-03-30
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US3969163A (en) * 1974-09-19 1976-07-13 Texas Instruments Incorporated Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases
US4471003A (en) * 1980-11-25 1984-09-11 Cann Gordon L Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
US4487162A (en) * 1980-11-25 1984-12-11 Cann Gordon L Magnetoplasmadynamic apparatus for the separation and deposition of materials
DE4328868A1 (en) * 1993-08-27 1995-03-02 Twin Solar Technik Entwicklung Element of a photovoltaic solar cell and method for its production as well as its arrangement in a solar cell
US20090165704A1 (en) * 2007-12-28 2009-07-02 Mitsubishi Materials Corporation Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2556711A (en) * 1947-10-29 1951-06-12 Bell Telephone Labor Inc Method of producing rectifiers and rectifier material
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2597028A (en) * 1949-11-30 1952-05-20 Bell Telephone Labor Inc Semiconductor signal translating device
US2602763A (en) * 1948-12-29 1952-07-08 Bell Telephone Labor Inc Preparation of semiconductive materials for translating devices
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
US2644852A (en) * 1951-10-19 1953-07-07 Gen Electric Germanium photocell
US2655625A (en) * 1952-04-26 1953-10-13 Bell Telephone Labor Inc Semiconductor circuit element
US2701216A (en) * 1949-04-06 1955-02-01 Int Standard Electric Corp Method of making surface-type and point-type rectifiers and crystalamplifier layers from elements
US2703296A (en) * 1950-06-20 1955-03-01 Bell Telephone Labor Inc Method of producing a semiconductor element

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2556711A (en) * 1947-10-29 1951-06-12 Bell Telephone Labor Inc Method of producing rectifiers and rectifier material
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2602763A (en) * 1948-12-29 1952-07-08 Bell Telephone Labor Inc Preparation of semiconductive materials for translating devices
US2701216A (en) * 1949-04-06 1955-02-01 Int Standard Electric Corp Method of making surface-type and point-type rectifiers and crystalamplifier layers from elements
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
US2597028A (en) * 1949-11-30 1952-05-20 Bell Telephone Labor Inc Semiconductor signal translating device
US2703296A (en) * 1950-06-20 1955-03-01 Bell Telephone Labor Inc Method of producing a semiconductor element
US2644852A (en) * 1951-10-19 1953-07-07 Gen Electric Germanium photocell
US2655625A (en) * 1952-04-26 1953-10-13 Bell Telephone Labor Inc Semiconductor circuit element

Cited By (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2890359A (en) * 1953-06-13 1959-06-09 Philips Corp Camera tube
US2910394A (en) * 1953-10-02 1959-10-27 Int Standard Electric Corp Production of semi-conductor material for rectifiers
US3015590A (en) * 1954-03-05 1962-01-02 Bell Telephone Labor Inc Method of forming semiconductive bodies
US3335697A (en) * 1954-05-18 1967-08-15 Siemens Ag Apparatus for vapor deposition of silicon
US3146123A (en) * 1954-05-18 1964-08-25 Siemens Ag Method for producing pure silicon
US2890976A (en) * 1954-12-30 1959-06-16 Sprague Electric Co Monocrystalline tubular semiconductor
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
US3330251A (en) * 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
US3042494A (en) * 1955-11-02 1962-07-03 Siemens Ag Method for producing highest-purity silicon for electric semiconductor devices
US2994621A (en) * 1956-03-29 1961-08-01 Baldwin Piano Co Semi-conductive films and methods of producing them
US3099534A (en) * 1956-06-25 1963-07-30 Siemens Ag Method for production of high-purity semiconductor materials for electrical purposes
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
US2827403A (en) * 1956-08-06 1958-03-18 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials
US2993762A (en) * 1956-10-16 1961-07-25 Int Standard Electric Corp Methods of producing silicon of high purity
US3021197A (en) * 1956-11-20 1962-02-13 Olin Mathieson Preparation of diborane
US2898248A (en) * 1957-05-15 1959-08-04 Ibm Method of fabricating germanium bodies
US3030189A (en) * 1958-05-19 1962-04-17 Siemens Ag Methods of producing substances of highest purity, particularly electric semiconductors
US2970111A (en) * 1958-09-20 1961-01-31 Siemens Ag Method of producing a rod of lowohmic semiconductor material
DE1153540B (en) * 1958-09-20 1963-08-29 Siemens Ag Process for the production of a rod from semiconductor material
US3014791A (en) * 1958-10-01 1961-12-26 Merck & Co Inc Pyrolysis apparatus
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
US3147141A (en) * 1959-05-04 1964-09-01 Ishizuka Hiroshi Apparatus for the manufacture of high purity elemental silicon by thermal decomposition of silane
US3014820A (en) * 1959-05-28 1961-12-26 Ibm Vapor grown semiconductor device
US3000768A (en) * 1959-05-28 1961-09-19 Ibm Semiconductor device with controlled zone thickness
US2999735A (en) * 1959-06-11 1961-09-12 Siemens Ag Method and apparatus for producing hyper-pure semiconductor material, particularly silicon
US3322575A (en) * 1959-06-18 1967-05-30 Monsanto Co Graded energy gap photoelectromagnetic cell
US3224913A (en) * 1959-06-18 1965-12-21 Monsanto Co Altering proportions in vapor deposition process to form a mixed crystal graded energy gap
US3069244A (en) * 1959-07-17 1962-12-18 Int Standard Electric Corp Production of silicon
DE1155916B (en) * 1959-10-09 1963-10-17 Siemens Ag Process for the production of disk-shaped silicon or germanium bodies
US3053638A (en) * 1959-11-02 1962-09-11 Siemens Ag Method and apparatus for producing hyperpure silicon rods
US3190773A (en) * 1959-12-30 1965-06-22 Ibm Vapor deposition process to form a retrograde impurity distribution p-n junction formation wherein the vapor contains both donor and acceptor impurities
US3151006A (en) * 1960-02-12 1964-09-29 Siemens Ag Use of a highly pure semiconductor carrier material in a vapor deposition process
US3226269A (en) * 1960-03-31 1965-12-28 Merck & Co Inc Monocrystalline elongate polyhedral semiconductor material
US3172791A (en) * 1960-03-31 1965-03-09 Crystallography orientation of a cy- lindrical rod of semiconductor mate- rial in a vapor deposition process to obtain a polygonal shaped rod
US3341376A (en) * 1960-04-02 1967-09-12 Siemens Ag Method of producing crystalline semiconductor material on a dendritic substrate
US3098774A (en) * 1960-05-02 1963-07-23 Mark Albert Process for producing single crystal silicon surface layers
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
US3206406A (en) * 1960-05-09 1965-09-14 Merck & Co Inc Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals
US3208888A (en) * 1960-06-13 1965-09-28 Siemens Ag Process of producing an electronic semiconductor device
US3172857A (en) * 1960-06-14 1965-03-09 Method for probucmg homogeneously boped monocrystalline bodies of ele- mental semiconductors
US3039857A (en) * 1960-07-26 1962-06-19 Condit Ralph Howell Apparatus for growing pure crystals
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member
US3192072A (en) * 1960-12-08 1965-06-29 Slemens & Halske Ag Method of pulling a dendritic crystal from a vapor atmosphere
US3271208A (en) * 1960-12-29 1966-09-06 Merck & Co Inc Producing an n+n junction using antimony
US3184348A (en) * 1960-12-30 1965-05-18 Ibm Method for controlling doping in vaporgrown semiconductor bodies
US3201664A (en) * 1961-03-06 1965-08-17 Int Standard Electric Corp Semiconductor diode having multiple regions of different conductivities
US3148094A (en) * 1961-03-13 1964-09-08 Texas Instruments Inc Method of producing junctions by a relocation process
US3138435A (en) * 1961-06-26 1964-06-23 Gen Electric Deposition apparatus and method for forming a pyrolytic graphite article
US3125533A (en) * 1961-08-04 1964-03-17 Liquid
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
US3261726A (en) * 1961-10-09 1966-07-19 Monsanto Co Production of epitaxial films
US3212939A (en) * 1961-12-06 1965-10-19 John L Davis Method of lowering the surface recombination velocity of indium antimonide crystals
US3168423A (en) * 1962-03-15 1965-02-02 Siemens Ag Method of producing monocrystalline wafers from the vaporous phase with alternative cooling and intermediate holding steps
US3271631A (en) * 1962-05-08 1966-09-06 Ibm Uniaxial crystal signal device
US3235418A (en) * 1962-06-14 1966-02-15 Siemens Ag Method for producing crystalline layers of high-boiling substances from the gaseous phase
US3323954A (en) * 1963-04-19 1967-06-06 Philips Corp Method of producing doped semiconductor material and apparatus for carrying out the said methods
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
US3299329A (en) * 1963-07-05 1967-01-17 Westinghouse Electric Corp Semiconductor structures providing both unipolar transistor and bipolar transistor functions and method of making same
US3297501A (en) * 1963-12-31 1967-01-10 Ibm Process for epitaxial growth of semiconductor single crystals
US3617399A (en) * 1968-10-31 1971-11-02 Texas Instruments Inc Method of fabricating semiconductor power devices within high resistivity isolation rings
US3517643A (en) * 1968-11-25 1970-06-30 Sylvania Electric Prod Vapor deposition apparatus including diffuser means
US3880112A (en) * 1971-10-20 1975-04-29 Commissariat Energie Atomique Device for the preparation of thin films
US3969163A (en) * 1974-09-19 1976-07-13 Texas Instruments Incorporated Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases
USB561405I5 (en) * 1975-03-24 1976-03-30
US4003770A (en) * 1975-03-24 1977-01-18 Monsanto Research Corporation Plasma spraying process for preparing polycrystalline solar cells
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4471003A (en) * 1980-11-25 1984-09-11 Cann Gordon L Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
US4487162A (en) * 1980-11-25 1984-12-11 Cann Gordon L Magnetoplasmadynamic apparatus for the separation and deposition of materials
DE4328868A1 (en) * 1993-08-27 1995-03-02 Twin Solar Technik Entwicklung Element of a photovoltaic solar cell and method for its production as well as its arrangement in a solar cell
US20090165704A1 (en) * 2007-12-28 2009-07-02 Mitsubishi Materials Corporation Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon
KR101529732B1 (en) * 2007-12-28 2015-06-17 미쓰비시 마테리알 가부시키가이샤 Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon
US9090962B2 (en) 2007-12-28 2015-07-28 Mitsubishi Materials Corporation Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon

Similar Documents

Publication Publication Date Title
US2763581A (en) Process of making p-n junction crystals
US3014820A (en) Vapor grown semiconductor device
US3093517A (en) Intermetallic semiconductor body formation
US4010045A (en) Process for production of III-V compound crystals
US3364084A (en) Production of epitaxial films
US2868678A (en) Method of forming large area pn junctions
US3312570A (en) Production of epitaxial films of semiconductor compound material
US3218204A (en) Use of hydrogen halide as a carrier gas in forming ii-vi compound from a crude ii-vicompound
US3208888A (en) Process of producing an electronic semiconductor device
US4062706A (en) Process for III-V compound epitaxial crystals utilizing inert carrier gas
US3140965A (en) Vapor deposition onto stacked semiconductor wafers followed by particular cooling
US3316130A (en) Epitaxial growth of semiconductor devices
US3941647A (en) Method of producing epitaxially semiconductor layers
US3139361A (en) Method of forming single crystal films on a material in fluid form
US3424955A (en) Method for epitaxial precipitation of semiconductor material upon a spineltype lattice substrate
US2849343A (en) Method of manufacturing semi-conductive bodies having adjoining zones of different conductivity properties
US3975218A (en) Process for production of III-V compound epitaxial crystals
US3441453A (en) Method for making graded composition mixed compound semiconductor materials
US3184348A (en) Method for controlling doping in vaporgrown semiconductor bodies
JPH0513342A (en) Semiconductur diamond
US3765960A (en) Method for minimizing autodoping in epitaxial deposition
US3546032A (en) Method of manufacturing semiconductor devices on substrates consisting of single crystals
US3406048A (en) Epitaxial deposition of gallium arsenide from an atmosphere of hydrogen and ga2h6+ascl3+ash3 vapors
JP4673528B2 (en) Silicon carbide single crystal ingot and method for producing the same
US4155784A (en) Process for epitaxially growing a gallium arsenide layer having reduced silicon contaminants on a gallium arsenide substrate