US20150303167A1 - Semiconductor apparatus, method of manufacturing semiconductor apparatus, and electronic apparatus - Google Patents
Semiconductor apparatus, method of manufacturing semiconductor apparatus, and electronic apparatus Download PDFInfo
- Publication number
- US20150303167A1 US20150303167A1 US14/790,146 US201514790146A US2015303167A1 US 20150303167 A1 US20150303167 A1 US 20150303167A1 US 201514790146 A US201514790146 A US 201514790146A US 2015303167 A1 US2015303167 A1 US 2015303167A1
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- US
- United States
- Prior art keywords
- bump
- semiconductor
- stud bump
- flip
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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- 229910052737 gold Inorganic materials 0.000 claims description 3
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- 239000010410 layer Substances 0.000 description 72
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- 229910052738 indium Inorganic materials 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
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Definitions
- a method of manufacturing the semiconductor apparatus of the first embodiment will be described. It is noted that in the following description, only the configuration in the vicinity of the stud bump formed to the semiconductor apparatus will be described. Other configurations can be manufactured by a well-known method of related art.
- a component to which the semiconductor component 31 including the Cu stud bump 41 is flip-chip connected is not particularly limited so long as an electronic component including an electrode corresponding to the flip-chip connection and the solder bump formed on the electrode is employed.
- the electronic component to which the semiconductor component is flip-chip connected may be the semiconductor element and the like besides the glass substrate and the wiring substrate which are described above, for example.
- the opposite surface (rear surface) of the surface for forming various kinds of elements on the semiconductor base is cut (back-grinded: BG). Then, the semiconductor base is subjected to dicing (DC) and the first semiconductor component 61 is separated into individual chips.
Abstract
A semiconductor apparatus, including: a semiconductor component; a Cu stud bump that is formed on the semiconductor component; and a solder bump configured to electrically connect to the Cu stud bump.
Description
- The present application is a continuation of U.S. patent application Ser. No. 13/568,574 filed on Aug. 7, 2012 which claims priority from Japanese Patent Application No. JP 2011-178390 filed in the Japanese Patent Office on Aug. 17, 2011, the entire content of which is incorporated herein by reference.
- The present disclosure relates to a semiconductor apparatus, a method of manufacturing the semiconductor apparatus, and an electronic apparatus that are configured to be connected using a stud bump.
- As a flip-chip connection technique of a semiconductor apparatus, there is a method of connecting an Au stud bump to an SnAg solder bump or a method of connecting an Au stud bump to an Sn solder bump which is coated with Pd (Japanese Patent Application Laid-Open Nos. 2009-218442 and 2009-239278).
- There is a flip-chip connection technique for connecting an Au stud bump to a Cu electrode of a semiconductor chip (Japanese Patent Application Laid-Open No. 2001-60602) or a flip-chip connection technique for connecting an Au stud bump to an Sn-plated Cu electrode (Japanese Patent Application Laid-Open No. 2005-179099).
- Moreover, a Cu stud bump substituted for an Au stud bump has been suggested (Japanese Patent Application Laid-Open No. 2011-23568).
- In the flip-chip connection technique using the above described stud bump, it has been demanded to improve connection reliability of a semiconductor apparatus.
- The present disclosure provides a semiconductor apparatus, a method of manufacturing the semiconductor apparatus, and an electronic apparatus which have high connection reliability.
- The semiconductor apparatus in the present disclosure includes a semiconductor component, a Cu stud bump formed on the semiconductor component, and a solder bump electrically connected to the Cu stud bump.
- Moreover, the method of manufacturing the semiconductor apparatus in the present disclosure includes forming the Cu stud bump on the semiconductor component and flip-chip connecting the Cu stud bump to the solder bump.
- Moreover, the electronic apparatus in the present disclosure includes the semiconductor apparatus and a signal processing circuit configured to process an output signal of the semiconductor apparatus.
- According to the semiconductor apparatus and the method of manufacturing the semiconductor apparatus, the flip-chip connection is performed using the Cu stud bump, so that an alloy having a low strength is not generated at a connection portion between Cu and a solder even in low temperature connection. Therefore, connection defects are prevented at the connection portion between the Cu stud bump and the solder bump, and the connection reliability can be improved.
- According to the present disclosure, it is possible to provide the semiconductor apparatus and the electronic apparatus which have high connection reliability.
- These and other objects, features and advantages of the present disclosure will become more apparent in light of the following detailed description of best mode embodiments thereof, as illustrated in the accompanying drawings.
-
FIG. 1A is a drawing showing a configuration of a stud bump and a solder bump prior to flip-chip connection, andFIG. 1B is a drawing showing a configuration of the stud bump and the solder bump after the flip-chip connection; -
FIG. 2A is another drawing showing a configuration of the stud bump and the solder bump prior to the flip-chip connection, andFIG. 2B is another drawing showing a configuration of the stud bump and the solder bump after the flip-chip connection; -
FIG. 3 is a cross-sectional view showing a configuration of a semiconductor apparatus according to a first embodiment; -
FIG. 4 is a drawing showing a configuration of a Cu stud bump prior to the flip-chip connection; -
FIG. 5 is a drawing showing a configuration of the Cu stud bump and the solder bump after the flip-chip connection; -
FIG. 6 is a drawing showing a process flow of the semiconductor apparatus according to the first embodiment; -
FIGS. 7A to 7C are manufacturing process diagrams of the Cu stud bump; -
FIGS. 8A to 8D are manufacturing process diagrams of the solder bump; -
FIGS. 9A to 9C are process diagrams of the flip-chip connection by the Cu stud bump and the solder bump; -
FIG. 10 is a drawing showing a modified example of the process flow of the semiconductor apparatus according to the first embodiment; -
FIGS. 11A to 11C are process diagrams of the flip-chip connection by the Cu stud bump and the solder bump; -
FIG. 12 is a drawing showing a configuration of a modified example of the semiconductor apparatus according to the first embodiment; -
FIG. 13 is a cross-sectional view showing a configuration of a semiconductor apparatus according to a second embodiment; -
FIG. 14 is a drawing showing a process flow of the semiconductor apparatus according to a second embodiment; -
FIG. 15 is a drawing showing a modified example of the process flow of the semiconductor apparatus according to the second embodiment; and -
FIG. 16 is a drawing showing a configuration of an electronic apparatus. - Hereinafter, examples of embodiments for carrying out the present disclosure will be described. However, the present disclosure will not be limited to the following examples.
- It is noted that the descriptions will be given below in accordance with the following order.
- 1. Overview of semiconductor apparatus
2. First embodiment of semiconductor apparatus
3. Method of manufacturing semiconductor apparatus of First Embodiment
4. Second embodiment of semiconductor apparatus
5. Method of manufacturing semiconductor apparatus of Second Embodiment
6. Electronic apparatus - An overview of flip-chip connection of a semiconductor apparatus will be described.
-
FIG. 1 show configurations of flip-chip connection using a general Au stud bump of related art.FIG. 1A is a drawing showing a configuration of anAu stud bump 11 and anSn bump 12 prior to connection.FIG. 1B is a drawing showing a configuration of theAu stud bump 11 and theSn bump 12 after the connection. - The
Au stud bump 11 shown inFIG. 1A is the Au bump formed of Au wires. TheAu stud bump 11 is formed on anelectrode 14 which is formed on asemiconductor component 13. Thesemiconductor component 13 is coated by aprotective layer 15 except on theelectrode 14 on which theAu stud bump 11 is formed. - Moreover, the
Sn bump 12 shown inFIG. 1A includes an Sn group solder such as an SnAg solder bump. TheSn bump 12 includes anelectrode 17 formed on awiring substrate 16 and an under bump metal (UBM) 18 formed on theelectrode 17. Thewiring substrate 16 is coated by aprotective layer 19 except on theelectrode 17 on which theUBM 18 is formed. - As shown in
FIG. 1B , thesemiconductor component 13 is flip-chip connected on thewiring substrate 16 by theAu stud bump 11 and theSn bump 12. - At this time, it may be necessary to connect the
Au stud bump 11 and theSn bump 12 at 300° C. or higher to improve the connection reliability. - As shown in
FIG. 1B , in the connection at 300° C. or lower, an intermetallic compound (IMC) 20 having a low strength such as SnAu4 alloy is generated at a connection portion due to diffusion of Au to Sn. Therefore, generation of acrack 24 and the like may decrease in connectivity and reliability. Moreover, since theAu stud bump 11 is stuck into theSn bump 12, it is difficult to prevent the diffusion of Au to Sn. Therefore, it is difficult to prevent the generation of theIMC 20 at the connection portion. - As described above, in the flip-chip connection performed by the
Au stud bump 11 and theSn bump 12, it may be necessary to perform high-temperature connection at 300° C. or higher, so that it is difficult to perform low-temperature connection in view of the connection reliability. - Moreover, instead of using the Sn bump, as shown in
FIG. 2 , it is considered that a low melting point solder bump of In group is used to flip-chip connect theAu stud bump 11.FIG. 2A is a drawing showing a configuration of anAu stud bump 21 and an Inbump 22 prior to connection.FIG. 2B is a drawing showing a configuration of theAu stud bump 21 and theIn bump 22 after the connection. - The
Au stud bump 21 shown inFIG. 2A has the same configuration asFIG. 1A described above. Moreover, the In bump is constituted of an In group solder. In this method, an alloy having a low strength such as SnAu4 alloy is not generated, so that it is possible to perform low-temperature flip-chip connection at 200° C. or lower. - However, in the connection performed by using the
Au stud bump 21 and theIn bump 22, a diffusion coefficient between Au and In is large, so that it is difficult to control a growth of an AuIn alloy. As a result, as shown inFIG. 2B , the In bump is sucked due to a growth of anAuIn alloy 23. Therefore, in the flip-chip connection performed by theAu stud bump 21 and theIn bump 22, it is difficult to secure the connectivity. - As described above, in the flip-chip connection using the stud bump, it is difficult to perform low temperature processing in view of the connection reliability. Therefore, in a case where a material having a low heat resistance is mounted on the semiconductor component and the like, it is difficult to apply the flip-chip connection having high connection reliability. Therefore, it has been demanded that a method of the flip-chip connection can stably connect, at a low temperature, the semiconductor apparatus and the like formed by using a material having a low heat resistance and have high connection reliability.
- Hereinafter, a first embodiment of the semiconductor apparatus will be described.
FIG. 3 is a cross-sectional view showing a configuration of the semiconductor apparatus according to the first embodiment. In the first embodiment, the description will be made taking an example of an image sensor as the semiconductor apparatus.FIG. 3 is a cross-sectional view of asemiconductor apparatus 30 formed of the image sensor mounted on a glass substrate. - The
semiconductor apparatus 30 is constituted of asemiconductor component 31 including the image sensor, and aglass substrate 32. Thesemiconductor component 31 includes anelectrode 45 formed on thesemiconductor component 31 and aCu stud bump 41 formed on theelectrode 45. - Moreover, the
glass substrate 32 includes anelectrode 47 for flip-chip connection formed on theglass substrate 32, the under bump metal (UBM) 48 formed on theelectrode 47, and a low meltingpoint solder bump 44 formed on theUBM 48. Further, awiring layer 34 formed on theglass substrate 32, aprotective layer 49 coating thewiring layer 34, anelectrode 35 for external connection connected to thewiring layer 34, and asolder ball 36 formed on theelectrode 35 for external connection. - Moreover, an under-
fill resin 33 which seals a connection portion between theCu stud bump 41 and thesolder bump 44 is provided between thesemiconductor component 31 and theglass substrate 32. - The
semiconductor component 31 is an element generally used as an image sensor and is a semiconductor element such as a CCD (charge coupled device) image sensor and a CMOS (complementary metal oxide semiconductor) image sensor. Thesemiconductor component 31 is disposed so as to face a light receiving surface to theglass substrate 32 side. - Moreover, the
electrode 45 connected to theglass substrate 32 on the same surface as the light receiving surface is formed on thesemiconductor component 31. Then, theCu stud bump 41 for flip-chip connection is formed on theelectrode 45. Analloy layer 43 is formed on a contact surface between theCu stud bump 41 and thesolder bump 44. Moreover, theCu stud bump 41 includes aplating layer 42 on a surface which is not brought into contact with thesolder bump 44. - The
glass substrate 32 is constituted of a cover glass used for the image sensor, for example. Then, theelectrode 47 for flip-chip connection and theelectrode 35 for external connection are connected on theglass substrate 32 by thewiring layer 34. Thesolder ball 36 for connection to external devices is formed on theelectrode 35. Thesolder ball 36 is used for a binary or ternary solder of Sn group and the like. For example, SnBi, SnIn, SnAgCu, SnZn, and SnAg and the like are used. - It is noted that the
glass substrate 32 may be connected by wire bonding using Au wires instead of thesolder ball 36. - Next, in the above described
semiconductor apparatus 30,FIG. 4 shows a configuration of theCu stud bump 41 formed on thesemiconductor component 31. TheCu stud bump 41 shown inFIG. 4 is a state prior to connection. Moreover,FIG. 5 shows a configuration of theCu stud bump 41 and thesolder bump 44 after connecting thesemiconductor component 31 and theglass substrate 32. - As shown in
FIG. 4 , theCu stud bump 41 is formed on theelectrode 45 on thesemiconductor component 31. Thesemiconductor component 31 is coated by aprotective layer 46 except on theelectrode 45 on which theCu stud bump 41 is formed. - Moreover, a surface of the
Cu stud bump 41 is coated by theplating layer 42. - The
plating layer 42 is a protective layer for preventing oxidation of theCu stud bump 41. Moreover, when theCu stud bump 41 is flip-chip connected, theplating layer 42 is formed of a material which quickly diffuses the plating layer of the surface in thesolder bump 44. - As the
plating layer 42, for example, a plating layer constituted of a flash Ni plating layer and a flash Au plating layer by an electroless method, or an electroless Co plating layer is used. - Thicknesses of the
plating layer 42 are formed at 0.01 to 0.1 μm, for example. - Moreover, the
solder bump 44 provided on theglass substrate 32 is formed of a low melting point solder. As the low melting point solder, for example, a unary solder material of In, a low melting point binary solder material such as Sn—Bi, Sn—In, Bi—In, and a solder material formed by adding other metals to the binary solder material are used. As the low melting point solder, for example, a solder material whose melting point is 200° C. or lower is used. - Then, the
Cu stud bump 41 formed on thesemiconductor component 31 is brought into pressing contact with thesolder bump 44 of theglass substrate 32, thereby entering a top end of theCu stud bump 41 into thesolder bump 44. Subsequently, heating is performed in a state where theCu stud bump 41 is stuck into thesolder bump 44, so that the flip-chip connection is performed as shown inFIG. 5 . - As shown in
FIG. 5 , when the flip-chip connection is performed, theplating layer 42 of the contact surface between theCu stud bump 41 and thesolder bump 44 is diffused into thesolder bump 44. Moreover, thealloy layer 43 of Cu and the solder is formed on the contact surface between theCu stud bump 41 and thesolder bump 44. At this time, it is suitable that thesolder bump 44 is not entirely alloyed and thesolder bump 44 which is not alloyed is left on theUBM 48. - In the above-described configuration, it is possible to prevent generation of alloy having a weak mechanical strength on an interface of the low melting
point solder bump 44 by using Cu as the stud bump material of the flip-chip connection. Moreover, it is possible to perform the flip-chip connection at a low temperature by using the low melting point solder as thesolder bump 44. - For example, in a case where the
solder bump 44 is constituted of In, an intermetallic compound of In3Cu7 and the like are formed on an interface between theCu stud bump 41 and thesolder bump 44. The intermetallic compound of In3Cu7 has enough mechanical strength. Therefore, even in the low-temperature flip-chip connection, an alloy having a low strength which causes reduction in connection reliability is not generated. Moreover, even in a combination of the Cu stud bump and the low melting point binary solder material and the like, an alloy layer having a weak mechanical strength is not generated on the interface. Therefore, even in thesemiconductor component 31 having heat sensitive configuration, it is possible to apply the flip-chip connection. - Therefore, in the flip-chip connection, it is possible to perform low-temperature connection and further improve the connection reliability of the semiconductor apparatus.
- A method of manufacturing the semiconductor apparatus of the first embodiment will be described. It is noted that in the following description, only the configuration in the vicinity of the stud bump formed to the semiconductor apparatus will be described. Other configurations can be manufactured by a well-known method of related art.
-
FIG. 6 shows a process flow of thesemiconductor apparatus 30 shown inFIG. 3 . - As shown in
FIG. 6 , elements such as photodiodes and various kinds of transistors, and wirings and the like constituting thesemiconductor component 31 on a semiconductor base are formed by the well-known method. At this time, theelectrode 45 for external connection is formed for performing flip-chip connection. - The
Cu stud bump 41 is formed on theelectrode 45 for connecting to external devices of thesemiconductor component 31. - The
plating layer 42 is formed on the formedCu stud bump 41 by an electroless plating method. - An opposite surface (rear surface) of a surface for forming various kinds of elements on the semiconductor base is cut (back-grinded: BG) and the
semiconductor component 31 constituting a rear-surface irradiation type solid-state imaging device is formed. - The semiconductor base is subjected to dicing (DC) and the
semiconductor component 31 is separated into individual chips. - Moreover, the
wiring layer 34, theelectrode 47 and the like are formed on theglass substrate 32 by the well-known method. Then, theUBM 48 is formed on theelectrode 47. - The
solder bump 44 is formed on theUBM 48 using the low melting point solder. - Next, the
Cu stud bump 41 is brought into pressing contact with (bonded to) thesolder bump 44, thereby flip-chip connecting thesemiconductor component 31 which is separated into individual chips to theglass substrate 32. After connection, the under-fill (UF)resin 33 is injected around the connection portion between theCu stud bump 41 and thesolder bump 44. Then, the injectedUF resin 33 is heated and the UF resin is hardened (cured). - With the above process, the
semiconductor apparatus 30 can be manufactured. - A Cu stud bump forming process in a process flow of the above described
semiconductor apparatus 30 will be described with reference to a manufacturing process diagram shown inFIG. 7 . - As shown in
FIG. 7A , aCu wire 51 is subjected to bonding on theelectrode 45 of thesemiconductor component 31 using acapillary 52. Then, as shown inFIG. 7B , theCu stud bump 41 is formed by cutting theCu wire 51. In a formation process of theCu stud bump 41, for example, theCu wire 51 having a diameter of 15 to 35 μmΦ is used to form theCu stud bump 41 having a diameter of 30 to 70 μmΦ. - Next, as shown in
FIG. 7C , theplating layer 42 is formed on a surface of the formedCu stud bump 41. Theplating layer 42 is formed by the electroless plating method. For example, a flash Ni plating is performed on the surface of theCu stud bump 41 by the electroless plating method. Then, a flash Au plating is performed on the flash Ni plating layer. Thus, theplating layer 42 constituting the Ni plating layer and the Au plating layer is formed. - For example, in the
plating layer 42, the Ni plating layer and the Au plating layer are formed to have a thickness of 0.01 to 0.1 μm, respectively. - Moreover, for example, Co plating is performed on the surface of the
Cu stud bump 41 as theplating layer 42 by the electroless plating method. In this case, theplating layer 42 constituting the Co plating layer is formed to have a thickness of 0.01 to 0.1 μm. - With the above process, the
Cu stud bump 41 is formed on thesemiconductor component 31. - Next, a solder bump forming process in the process flow of the
semiconductor apparatus 30 will be described with reference to a manufacturing process diagram shown inFIG. 8 . - As shown in
FIG. 8A , abarrier metal layer 53 is formed on a surface of theelectrode 47 and theprotective layer 49. - Prior to forming the
barrier metal layer 53, an oxide film on the surface of theelectrode 47 is removed through reverse-sputtering. Subsequently, a Ti layer is formed on theelectrode 47 by a sputtering method. Then, a Cu layer is formed so as to coat the Ti layer by the sputtering method. Thus, thebarrier metal layer 53 constituted of the Ti layer and the Cu layer is formed. - Next, as shown in
FIG. 8B , a resistlayer 54 is formed on thebarrier metal layer 53. Then, the resistlayer 54 is subjected to exposure processing by aphoto mask 55. In thephoto mask 55, a pattern for irradiating exposure light on a portion for forming theelectrode 47 is used. - Next, as shown in
FIG. 8C , the under bump metal (UBM) 48 and thesolder bump 44 are formed in an opening formed by removing an exposure portion of the resistlayer 54 by an electro plating method. TheUBM 48 is formed by the electro plating method using Ni, Ti, TiW, W, Cu, and the like. Moreover, thesolder bump 44 is formed by the electro plating method by use of a unary solder material of In, a low melting point binary solder material such as Sn—Bi, Sn—In, Bi—In, and the like. - Next, as shown in
FIG. 8D , after the resistlayer 54 is removed, thebarrier metal layer 53 exposed to the surface is removed. Further, thesolder bump 44 is melted into a spherical form through a reflow. - With the above process, the
solder bump 44 is formed on theglass substrate 32. - Next, a flip-chip connecting process and a UF resin sealing process in the process flow of the above described
semiconductor apparatus 30 will be described with reference to a manufacturing process diagram shown inFIG. 9 . - First, as shown in
FIG. 9A , thesemiconductor component 31 and theglass substrate 32 are aligned by facing a surface for forming theCu stud bump 41 and a surface for forming thesolder bump 44. - Next, as shown in
FIG. 9B , while theCu stud bump 41 and thesolder bump 44 are aligned, thesemiconductor component 31 and theglass substrate 32 are brought into pressing contact and are flip-chip connected. At this time, pressing contact and heating are simultaneously performed according to the flip-chip connection. Theplating layer 42 on the surface of theCu stud bump 41 is diffused into thesolder bump 44 by thermal processing. Moreover, thealloy layer 43 is generated and grown on a connection surface between theCu stud bump 41 and thesolder bump 44 by thermal processing. - In the above described flip-chip connection, pressure (bonding force) applied to each unit of bump during pressing contact is 0.01 gf/bump to 10 gf/bump, for example. Moreover, a heating temperature is set at 200° C. or lower during the flip-chip connection. Moreover, the heating temperature is set at a temperature at or above a melting point of the
solder bump 44 to be used. For example, in a case where a solder of solid In is used for thesolder bump 44, the solder is heated at 156° C. or higher which is a melting point of In. - Next, as shown in
FIG. 9C , the under-fill (UF)resin 33 is applied to the connection portion between theCu stud bump 41 and thesolder bump 44. Then, theUF resin 33 is heated and hardened. In theUF resin 33, thesemiconductor component 31 and theglass substrate 32 are bonded, thereby improving mechanical connection reliability of an adhesive surface of the semiconductor apparatus. - With the above process, the
semiconductor component 31 can be flip-chip connected to theglass substrate 32. - In the above described flip-chip connection, it is possible to perform a connection at 200° C. or lower by using the low melting point solder for the
solder bump 44. Moreover, an alloy having a low strength is not generated by using theCu stud bump 41 even in the low-temperature flip-chip connection. - It is noted that in the above mentioned manufacturing process, thermal processing for causing a growth of the alloy layer does not need to be performed at the same time as the flip-chip connection. For example, after the process for bringing into pressing contact with and flip-chip connecting the
semiconductor component 31 and theglass substrate 32, annealing may be performed in a different process. At this time, the annealing is performed at 200° C. or lower. - Next, a modified example of a manufacturing method of the above described
semiconductor apparatus 30 will be described. In the modified example, sealing flip-chip connection portion by the UF resin is different from the above described manufacturing method. -
FIG. 10 shows a process flow which is changed in the UF resin sealing process. - As shown in
FIG. 10 , elements such as photodiodes and various kinds of transistors, and wirings and the like constituting thesemiconductor component 31 on the semiconductor base are formed by the well-known method. At this time, theelectrode 45 for external connection is formed for performing flip-chip connection. - The
Cu stud bump 41 is formed on theelectrode 45 for connecting to external devices of the semiconductor component. - The
plating layer 42 is formed on the formedCu stud bump 41 by the electroless plating method. - The under-fill (UF)
resin 33 is laminated on the formedCu stud bump 41. - An opposite surface (rear surface) of the surface for forming various kinds of elements on the semiconductor base is cut (back-grinded: BG) and the
semiconductor component 31 constituting a rear-surface irradiation type solid-state imaging device is formed. - The semiconductor base is subjected to dicing (DC) and the
semiconductor component 31 is separated into individual chips. - Moreover, the
wiring layer 34, theelectrode 47 and the like are formed on theglass substrate 32 by the well known method. Then, theUBM 48 is formed on theelectrode 47. - The
solder bump 44 is formed on theUBM 48 using the low melting point solder. - Next, the
Cu stud bump 41 is brought into pressing contact with (bonded to) thesolder bump 44, thereby flip-chip connecting thesemiconductor component 31 which is separated into individual chips to theglass substrate 32. After connection, theOF resin 33 is heated and is hardened (cured). - With the above process, the
semiconductor apparatus 30 can be manufactured. - Next, the UF resin forming process and the UF resin sealing process in the process flow of the above described
semiconductor apparatus 30 will be described with reference to a manufacturing process diagram shown inFIG. 11 . It is noted that in the following description, only the process which is different from the manufacturing method of the above described semiconductor apparatus will be described. - First, the
plating layer 42 is formed on theCu stud bump 41 by the above processes (FIG. 7C ) and then the under-fill (UF)resin 33 covering theCu stud bump 41 is formed as shown inFIG. 11A . The under-fill (UF)resin 33 is formed by a spin coating method using a coating liquid including the under-fill resin or a laminate of a dry film of the under-fill resin, for example. - Next, as shown in
FIG. 11B , thesemiconductor component 31 and theglass substrate 32 are aligned by facing the surface for forming theCu stud bump 41 and the surface for forming thesolder bump 44. Then, as shown inFIG. 11C , thesemiconductor component 31 and theglass substrate 32 are brought into pressing contact and are flip-chip connected. Further, thealloy layer 43 is grown on the connection surface between theCu stud bump 41 and thesolder bump 44, and theUF resin 33 is hardened by thermal processing. - With the above process, the
UF resin 33 covering theCu stud bump 41 is formed prior to the flip-chip connection and thesemiconductor apparatus 30 can be manufactured by a method of hardening theUF resin 33 after the flip-chip connection. - In the semiconductor apparatus of the first embodiment, the wiring substrate can be used instead of the glass substrate.
FIG. 12 shows a configuration of the semiconductor apparatus which uses the wiring substrate. - The semiconductor apparatus shown in
FIG. 12 is constituted of thesemiconductor component 31 constituting the image sensor, and awiring substrate 37. - The
semiconductor component 31 includes theelectrode 45 formed on thesemiconductor component 31 and theCu stud bump 41 formed on theelectrode 45. - Moreover, the
wiring substrate 37 includes theelectrode 47 for flip-chip connection formed on thewiring substrate 37, the under bump metal (UBM) 48 formed on theelectrode 47, and the low meltingpoint solder bump 44 formed on theUBM 48. Further, thewiring substrate 37 includes thewiring layer 34 formed on theglass substrate 32, theprotective layer 49 coating thewiring layer 34, theelectrode 35 for external connection connected to thewiring layer 34, and thesolder ball 36 formed on theelectrode 35 for external connection. - For example, the
wiring substrate 37 includes a translucentoptical component 38 such as glass on the light receiving surface of thesemiconductor component 31. Then, theelectrode 47, theUBM 48, and thesolder bump 44 are formed on thewiring substrate 37 along a circumference of theoptical component 38. - It is noted that the configurations of the
semiconductor component 31, theCu stud bump 41 of thesemiconductor component 31, and the like shown inFIG. 12 are the same as the first embodiment. Moreover, the configurations of thesolder bump 44, theelectrode 47, thewiring layer 34 and the like formed on thewiring substrate 37 are the same as the first embodiment. - As the modified example described above, a component to which the
semiconductor component 31 including theCu stud bump 41 is flip-chip connected is not particularly limited so long as an electronic component including an electrode corresponding to the flip-chip connection and the solder bump formed on the electrode is employed. The electronic component to which the semiconductor component is flip-chip connected may be the semiconductor element and the like besides the glass substrate and the wiring substrate which are described above, for example. - Next, a second embodiment of the semiconductor apparatus will be described.
FIG. 13 shows the semiconductor apparatus of the second embodiment. - A
semiconductor apparatus 60 shown inFIG. 13 includes afirst semiconductor component 61 and asecond semiconductor component 62. Then, thefirst semiconductor component 61 is mounted on thesecond semiconductor component 62 by the flip-chip connection. - The
first semiconductor component 61 includes theelectrode 45 formed on thefirst semiconductor component 61 and theCu stud bump 41 formed on theelectrode 45. It is noted that thefirst semiconductor component 61 is the same configuration as thesemiconductor component 31 of the first embodiment shown inFIG. 3 described above, so that the detailed description is omitted. - The
second semiconductor component 62 includes theelectrode 47 for flip-chip connection, the under bump metal (UBM) 48 formed on theelectrode 47, and the low meltingpoint solder bump 44 formed on theUBM 48. Further, an end portion of thesecond semiconductor component 62 includes apad electrode 63 for wire bonding for external connection. Thesemiconductor apparatus 60 is electrically connected by wire bonding to an external electronic apparatus by thepad electrode 63 for wire bonding of thesecond semiconductor component 62. Moreover, theprotective layer 49 is provided on a surface of thesecond semiconductor component 62 except on theelectrode 47 for flip-chip connection and thepad electrode 63 for wire bonding. - The surface of the
Cu stud bump 41 is coated by theplating layer 42. As theplating layer 42, for example, the plating layer constituted of the flash Ni plating layer and the flash Au plating layer by the electroless method, or the electroless Co plating layer is used. - The
solder bump 44 is formed of a low melting point solder. As the low melting point solder, the unary solder material of In, the low melting point binary solder material such as Sn—Bi, Sn—In, Bi—In, and the solder material formed by adding other metals to the binary solder material are used. - The
alloy layer 43 of Cu and the solder is formed on the contact surface between theCu stud bump 41 and thesolder bump 44. - Moreover, in the
semiconductor apparatus 60 shown inFIG. 13 , the under-fill (UF)resin 33 which seals the entire connection surface between the semiconductor components is provided between thefirst semiconductor component 61 and thesecond semiconductor component 62. Thefirst semiconductor component 61 and thesecond semiconductor component 62 are mechanically connected by the under-fill (UF)resin 33. Then, the connection portion between theCu stud bump 41 and thesolder bump 44 is formed into the under-fill (UF)resin 33. Thus, in thesemiconductor apparatus 60, a fillet is formed by the under-fill resin 33 which fills between thefirst semiconductor component 61 and thesecond semiconductor component 62. -
FIG. 14 shows a process flow of thesemiconductor apparatus 60 shown inFIG. 13 . - As shown in
FIG. 14 , elements such as various kinds of transistors, and wirings and the like constituting thefirst semiconductor component 61 on the semiconductor base are formed by the well-known method. At this time, theelectrode 45 for external connection is formed for performing flip-chip connection. - The
Cu stud bump 41 is formed on the electrode for connecting to external devices of thefirst semiconductor component 61. - The
plating layer 42 is formed on the formedCu stud bump 41 by the electroless plating method. - The opposite surface (rear surface) of the surface for forming various kinds of elements on the semiconductor base is cut (back-grinded: BG). Then, the semiconductor base is subjected to dicing (DC) and the
first semiconductor component 61 is separated into individual chips. - Moreover, elements such as various kinds of transistors, and wirings and the like constituting the
second semiconductor component 62 on the semiconductor base are formed by the well-known method. At this time, theelectrode 47 for mounting thefirst semiconductor component 61 is formed, and theUBM 48 is formed on theelectrode 47. - The
solder bump 44 is formed on theUBM 48 using the low melting point solder. - Then, the opposite surface (rear surface) of the surface for forming various kinds of elements on the semiconductor base is cut (back-grinded: BG). Then, the semiconductor base is subjected to dicing (DC) and the
second semiconductor component 62 is separated into individual chips. - Next, the
Cu stud bump 41 is brought into pressing contact with (bonded to) thesolder bump 44, thereby flip-chip connecting thefirst semiconductor component 61 on thesecond semiconductor component 62. - After flip-chip connection, the connection portion between the
Cu stud bump 41 and thesolder bump 44 is covered and the under-fill (UF)resin 33 is injected between thefirst semiconductor component 61 and thesecond semiconductor component 62. Then, the injectedUF resin 33 is heated and is hardened (cured). - With the above process, the
semiconductor apparatus 60 of the second embodiment can be manufactured. - It is noted that formation of the
Cu stud bump 41, formation of thesolder bump 44, and the flip-chip connection can be performed by the same method as the first embodiment shown inFIGS. 7 to 9 described above. - Next, a modified example of a manufacturing method of the
semiconductor apparatus 60 of the second embodiment will be described. In the modified example, sealing both of the semiconductor components by the UF resin is different from the above described manufacturing method. -
FIG. 15 shows a process flow which is changed in the UF resin sealing process. - As shown in
FIG. 15 , elements such as various kinds of transistors, and wirings and the like constituting thefirst semiconductor component 61 on the semiconductor base are formed by the well-known method. At this time, theelectrode 45 for external connection is formed for performing flip-chip connection. - The
Cu stud bump 41 is formed on the electrode for connecting to external devices of thefirst semiconductor component 61. - The
plating layer 42 is formed on the formedCu stud bump 41 by the electroless plating method. - The formed
Cu stud bump 41 is covered and the under-fill (UF)resin 33 is laminated on the entire surface of thefirst semiconductor component 61. - The opposite surface (rear surface) of the surface for forming various kinds of elements on the semiconductor base is cut (back-grinded: BG). Then, the semiconductor base is subjected to dicing (DC) and the
first semiconductor component 61 is separated into individual chips. - Moreover, elements such as various kinds of transistors, and wirings and the like constituting the
second semiconductor component 62 on the semiconductor base are formed by the well-known method. At this time, theelectrode 47 for mounting thefirst semiconductor component 61 is formed, and theUBM 48 is formed on theelectrode 47. - The
solder bump 44 is formed on theUBM 48 using the low melting point solder. - Then, the opposite surface (rear surface) of the surface for forming various kinds of elements on the semiconductor base is cut (back-grinded: BG). Then, the semiconductor base is subjected to dicing (DC) and the
second semiconductor component 62 is separated into individual chips. - Next, the
Cu stud bump 41 is brought into pressing contact with (bonded to) thesolder bump 44, thereby flip-chip connecting thefirst semiconductor component 61 on thesecond semiconductor component 62. After connection, the injected UF resin is heated and is hardened. - With the above process, the
semiconductor apparatus 60 of the second embodiment can be manufactured. - The semiconductor apparatus of the embodiments described above may be applied to electronic apparatuses including a semiconductor memory, a camera system such as a digital camera and a video camera, a mobile phone having an imaging function, or other devices having an image function, or the like. Hereinafter, the description will be made taking a camera as a configuration example of the electronic apparatus.
-
FIG. 16 shows a configuration example of the video camera which is capable of taking a still image or a moving image. - A
camera 70 of this example includes a solid-state imaging device 71, anoptical system 72 which guides incident light to a light receiving sensor unit of the solid-state imaging device 71, ashutter device 73 provided between the solid-state imaging device 71 and theoptical system 72, and a drivingcircuit 74 which drivers the solid-state imaging device 71. Further, thecamera 70 includes asignal processing circuit 75 which processes an output signal of the solid-state imaging device 71. - The solid-
state imaging device 71 is fabricated using semiconductor apparatus to which the solid-state imaging device including the above described Cu stud bump is flip-chip connected. - The optical system (optical lens) 72 focuses image light (incident light) from a subject on an imaging surface (not shown) of the solid-
state imaging device 71. As a result, signal charges are accumulated in the solid-state imaging device 71 for a predetermined time period. It is noted that the optical-system 72 may be constituted of an optical lens group including a plurality of optical lenses. Moreover, theshutter device 73 controls a light irradiation period and a light blocking time period to the solid-state imaging device 71 of the incident light. - The driving
circuit 74 supplies a driving signal to the solid-state imaging device 71 and theshutter device 73. Then, the drivingcircuit 74 controls a signal output operation to thesignal processing circuit 75 of the solid-state imaging device 71 and a shutter operation of theshutter device 73 by the supplied driving signal. That is, in this example, based on the driving signal (timing signal) supplied from the drivingcircuit 74, the signal transmission operation is performed from the solid-state imaging device 71 to thesignal processing circuit 75. - The
signal processing circuit 75 performs various kinds of signal processing to the signal transmitted from the solid-state imaging device 71. Then, the signal (image signal) subjected to the various kinds of signal processing is stored in a storage medium (not shown) such as memory or output to a monitor (not shown). - It is noted that the present disclosure can be configured as follows.
- (1) A semiconductor apparatus including: a semiconductor component; a Cu stud bump that is formed on the semiconductor component; and a solder bump configured to electrically connect to the Cu stud bump.
- (2) The semiconductor apparatus according to Item (1), further including a plating layer that is formed on a surface of the Cu stud bump.
- (3) The semiconductor apparatus according to Item (1) or (2), in which the solder bump contains at least one selected from In, SnBi, SnIn, and BiIn.
- (4) The semiconductor apparatus according to Item (2) or (3), in which the plating layer includes one of a plating layer of Ni and Au and a Co plating layer.
- (5) A method of manufacturing a semiconductor apparatus, including: forming a Cu stud bump on a semiconductor component; and flip-chip connecting the Cu stud bump to a solder bump.
- (6) The method of manufacturing a semiconductor apparatus according to Item (5), further including forming a plating layer on a surface of the Cu stud bump by an electroless plating method.
- (7) The method of manufacturing a semiconductor apparatus according to Item (5) or (6), in which heating is performed at 200° C. or lower one of during the flip-chip connecting and after the flip-chip connecting.
- (8) An electronic apparatus, including: a semiconductor apparatus described in any one of Items (1) to (4), and a signal processing circuit configured to process an output signal of the semiconductor apparatus.
- The present disclosure contains subject matter related to that disclosed in Japanese Priority Patent Application JP 2011-178390 filed in the Japan Patent Office on Aug. 17, 2011, the entire content of which is hereby incorporated by reference.
- It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.
Claims (8)
1. A method of manufacturing a semiconductor apparatus, comprising:
forming a Cu stud bump on a semiconductor component; and
flip-chip connecting the Cu stud bump to a solder bump.
2. The method of manufacturing a semiconductor apparatus according to claim 1 , wherein heating is performed at 200° C. or lower in at least one of during the flip-chip connecting and after the flip-chip connecting.
3. The method of manufacturing a semiconductor apparatus according to claim 1 further comprising:
forming a plating layer on a surface of the Cu stud bump by an electroless plating method.
4. The method of manufacturing a semiconductor apparatus according to claim 3 , wherein the plating layer is formed directly on an outer surface of the Cu stud bump.
5. The method of manufacturing a semiconductor apparatus according to claim 4 , wherein the plating layer is formed directly on an outer surface of the Cu stud bump that is not brought in contact with the solder bump.
6. The method of manufacturing a semiconductor apparatus according to claim 3 , wherein the plating layer includes a Co plating layer and includes one of a plating layer of Ni or Au.
7. The method of manufacturing a semiconductor apparatus according to claim 1 further comprising:
forming an alloy layer in between and immediately adjacent to each of the Cu stud bump and the solder bump such that the alloy layer is in contact with each of the Cu stud bump and the solder bump.
8. The method of manufacturing a semiconductor apparatus according to claim 1 , wherein the solder bump for flip-chip connecting the Cu stud bump is formed of at least one material selected from among the group of In, SnBi, SnIn, and BiIn.
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US14/790,146 US20150303167A1 (en) | 2011-08-17 | 2015-07-02 | Semiconductor apparatus, method of manufacturing semiconductor apparatus, and electronic apparatus |
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JP2011178390A JP6035714B2 (en) | 2011-08-17 | 2011-08-17 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
JP2011-178390 | 2011-08-17 | ||
US13/568,574 US9105625B2 (en) | 2011-08-17 | 2012-08-07 | Semiconductor apparatus, method of manufacturing semiconductor apparatus, and electronic apparatus |
US14/790,146 US20150303167A1 (en) | 2011-08-17 | 2015-07-02 | Semiconductor apparatus, method of manufacturing semiconductor apparatus, and electronic apparatus |
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JP6082282B2 (en) * | 2013-03-12 | 2017-02-15 | スタンレー電気株式会社 | Semiconductor light emitting device |
TWI600129B (en) | 2013-05-06 | 2017-09-21 | 奇景光電股份有限公司 | Chip on glass structure |
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US20130043585A1 (en) | 2013-02-21 |
KR101996676B1 (en) | 2019-07-04 |
CN102956603A (en) | 2013-03-06 |
JP6035714B2 (en) | 2016-11-30 |
TWI523175B (en) | 2016-02-21 |
KR20130020565A (en) | 2013-02-27 |
US9105625B2 (en) | 2015-08-11 |
JP2013042005A (en) | 2013-02-28 |
TW201320270A (en) | 2013-05-16 |
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