US20150249024A1 - Method and equipment for removing photoresist residue afer dry etch - Google Patents
Method and equipment for removing photoresist residue afer dry etch Download PDFInfo
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- US20150249024A1 US20150249024A1 US14/698,940 US201514698940A US2015249024A1 US 20150249024 A1 US20150249024 A1 US 20150249024A1 US 201514698940 A US201514698940 A US 201514698940A US 2015249024 A1 US2015249024 A1 US 2015249024A1
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Definitions
- This disclosure relates to semiconductor processing and equipment. More particularly, the disclosed subject matter relates to a process and an apparatus of removing photoresist residues produced in the fabrication of semiconductor device.
- Photoresists are commonly used in photolithography processes during fabrication of semiconductor devices comprising integrated circuits (IC). In the fabrication processes, photoresists are also used for patterning. Photoresist patterning includes process steps such as photoresist coating, softbaking, mask aligning, pattern exposing, photoresist development, and hard baking. Photoresists are eventually removed through dry or wet etching, stripping and/or other cleaning processes.
- any photoresist residues remaining on the semiconductor device will affect the quality of subsequent processing steps, and may even damage structures of semiconductor devices. Meanwhile, as sizes of active circuit elements in ICs continues to decrease, with corresponding increases in the pattern densities of circuits in these ICs, quality of each processing step and resulting features of devices should be precisely controlled.
- Via holes are through holes made in a substrate, for different purposes. For example, via holes are used to connect circuit patterns in adjacent metal layers, or to ground semiconductor devices and passive devices. Via holes are made through dielectric layers, for subsequent metal deposition to form a plug and create interconnect between two metal lines in different layers. Multi-level interconnect schemes employ such via holes in large numbers. Processes used to perform such interconnection using via holes include the single damascene process and the dual-damascene process.
- FIGS. 1A-1K are cross-sectional views of a portion of a semiconductor device during fabrication, illustrating an exemplary process of forming a via hole which comprises a method of removing photoresist residue after dry etch in accordance with some embodiments.
- FIGS. 2A-2D illustrate an exemplary apparatus comprising a top UV lamp module and a side UV lamp module configured to irradiate both the front and the back surfaces of a semiconductor wafer in accordance with some embodiments.
- FIGS. 3A-3D illustrate an exemplary apparatus comprising a top UV lamp module and a side UV reflector configured to irradiate both the front and the back surfaces of a semiconductor wafer in accordance with some embodiments.
- FIGS. 4A-4B are flow chart diagrams illustrating an exemplary method of forming a via hole which comprises a method of removing photoresist residue after dry etch in accordance with some embodiments.
- FIG. 5 is a flow chart diagram illustrating a method of forming a conductive layer, an etch stop layer, a dielectric layer and a hard mask layer over a front side of a semiconductor substrate in accordance with some embodiments.
- FIG. 6 is a flow chart diagram illustrating a method of removing photoresist residue after dry etching in accordance with some embodiments.
- CMOS devices continue to be scaled to smaller sizes to meet advanced performance. Fabrication of device with such small dimensions involves precise controls. When photoresists are commonly used during fabrication of semiconductor process, it becomes increasingly important to thoroughly clean any photoresist residues remaining on the semiconductor device, especially those remaining inside trenches and via holes.
- a scrubbing process can be used to remove photoresist.
- a cleaning fluid such as water is sprayed onto a front side surface of a wafer having photoresists, optionally in combination with the use of mechanical force.
- some polymer defects resulting from the photoresist residues could still be found inside trenches and via holes, on a front side surface, and even a back side of a wafer.
- these photoresist residues are to be more thoroughly removed before a next step of process.
- the present disclosure provides a method for removing photoresist residue during fabrication of semiconductor device, a method for making a semiconductor device having a via hole which comprises removing photoresist residue, and an apparatus which can be used for the process in accordance with some embodiments.
- the inventors have determined that photoresist residues are better or completely removed, after exposing at least one or both of the front side and a portion of the back side of a semiconductor wafer to an atmosphere comprising active oxygen after a process of photoresist patterning.
- references to “active oxygen” made in this disclosure will be understood to encompass a reactive chemical species comprising oxygen which can oxidize photoresist used during a process of fabricating a semiconductor device.
- the reactive chemical species comprising oxygen can dissociate into atomic oxygen, oxygen radical, oxygen ions, or any other oxygen-containing reactive species which can react with chemical linkages in the photoresist such as C—H and C—C bonds.
- Examples of such an atmosphere comprising active oxygen include but are not limited to atmosphere comprising ozone (O 3 ) or other oxygen-containing species under ultra violet (UV) light, and oxygen containing plasma.
- O 3 ozone
- UV light ultra violet
- FIGS. 4A-4B are described with reference to the exemplary structures described in FIGS. 1A-1K .
- FIGS. 4A-4B are flow chart diagrams illustrating an exemplary method 400 of forming a via hole in accordance with some embodiments.
- FIGS. 1A-1K are cross-sectional views of a portion of a semiconductor device during fabrication, illustrating the exemplary process 400 in accordance with some embodiments.
- Step 402 is a process comprising forming a conductive layer 102 , an etch stop (ES) layer 104 , a dielectric layer 106 and a hard mask (HM) layer 108 over a front side of a semiconductor substrate 101 .
- FIG. 5 illustrate an exemplary process of forming a conductive layer 102 , an ES layer 104 , a dielectric layer 106 and a HM layer 108 over a semiconductor substrate 101 in accordance with some embodiments. The structure of a portion of a semiconductor device having these layers is shown in FIG. 1A .
- Substrate 101 is shown in phantom in FIG. 1A-1K .
- Semiconductor substrate 101 has a back side surface opposite to the front side surface.
- Substrate 101 can be a wafer comprising a semiconductor material. Examples of suitable materials for substrate 101 include but are not limited to silicon, germanium, a compound semiconductor, and a semiconductor-on-insulator (SOI) substrate.
- a compound semiconductor can be an III-V semiconductor compound such as gallium arsenide (GaAs).
- An SOI substrate can comprise a semiconductor on an insulator such as glass.
- Substrate 101 is silicon in some embodiments.
- a conductive layer 102 is formed over the front side of semiconductor substrate 101 .
- a suitable material for conductive layer 102 include but are not limited to aluminum, copper, titanium, tantalum, tungsten, molybdenum, platinum, tantalum nitride (TaN), titanium nitride (TiN), tungsten nitride (WN), titanium aluminum (TiAl), titanium aluminum nitride (TiAlN), TaCN, TaC, TaSiN, other conductive material, or combinations thereof.
- Conductive layer 102 is copper in some embodiments.
- Conductive layer 102 can be formed by using chemical vapor deposition (CVD), high density plasma CVD, sputtering, or other suitable method.
- etch stop (ES) layer 104 is formed over conductive layer 102 .
- ES layer 104 can be formed of silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, combinations thereof, or other suitable materials.
- ES layer 104 is formed of silicon nitride.
- ES layer 104 can be formed by using chemical vapor deposition (CVD), high density plasma CVD, sputtering, or other suitable method.
- a dielectric layer 106 is formed over ES layer 104 .
- suitable materials for dielectric layer 106 include but are not limited to silicon oxide, silicon oxynitride, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), combinations thereof, or other suitable material.
- Dielectric layer 106 can be formed by using CVD, high density plasma CVD, spin-on, sputtering, or other suitable method.
- a hard mask (HM) layer 108 is deposited over dielectric layer 106 .
- a suitable material for hard mask 108 include but are not limited to silicon oxide, silicon nitride (e.g., Si 3 N 4 ), SiON, SiC, SiOC, or any combination thereof.
- hard mask layer 108 comprises silicon oxide.
- a photoresist layer 110 is coated and patterned over the front side of the semiconductor substrate 101 .
- the resulting structure is illustrated in FIG. 1B .
- Photoresist layer 110 can be formed of either a positive or a negative photoresist material.
- Photoresist layer 110 can be coated through spin-on or other suitable method.
- a trench 109 is formed through HM layer 108 and in dielectric layer 106 through photoresist patterning.
- the resulting structure is shown in FIG. 1C .
- the step of forming the trench 109 includes a dry etch process.
- photoresist layer 110 can be exposed to UV light or other irradiation under a mask.
- a portion of HM layer 108 and dielectric layer 106 are plasma-etched to form a trench 109 as shown in FIG. 1C .
- the remaining photoresist layer 110 can also be dry-etched, for example, using plasma.
- photoresist residues 112 may exist inside trench 109 , on the front surface of semiconductor substrate 101 (e.g., on the surface of HM layer 108 ), and/or the back surface of semiconductor substrate 101 .
- At step 408 at least one of the front side and the back side of semiconductor substrate 101 is exposed to an atmosphere comprising active oxygen, as shown in FIG. 1D and FIG. 1E .
- FIGS. 1D and 1E illustrate the exposure of the front side and the back side of semiconductor substrate 101 , respectively.
- at least the back side or a portion of the back side of semiconductor 101 is exposed at step 408 .
- such exposure at step 408 is performed by exposing semiconductor substrate 101 to an atmosphere comprising oxygen plasma.
- Oxygen containing plasma can be generated under radio frequency (RF) energy using chemical precursors such as oxygen gas.
- RF radio frequency
- Low dosage of oxygen containing plasma is desirable in such exposure.
- the plasma flow is in the range of from 1,000 sccm to 10,000 sccm, for example, at about 2000 sccm.
- such an exposure at step 408 is performed by irradiating semiconductor substrate 101 with UV in an atmosphere comprising ozone (O 3 ).
- semiconductor substrate 101 is irradiated with UV in ozone at a temperature in the range of from 100° C. to 400° C., for example, from 260° C. to 280° C., or about 300° C. for a time interval in the range of from 1 second to 100 seconds, for example, from 40 second to 80 seconds, in some embodiments.
- O 3 flow is in the range of from about 1,000 to about 10,000 sccm, or about 2,000 sccm with other carrier gas such as He, Ar, N 2 and H 2 .
- Both the front side and the back side of semiconductor substrate 101 are simultaneously exposed to UV irradiation in an atmosphere comprising ozone (O 3 ) in some embodiments. At least a portion of the back side of semiconductor substrate 101 is exposed.
- An exemplary apparatus suitable for such an exposure is described in FIGS. 2A-2D , and 3 A- 3 D.
- At step 410 at least one of the front side and the back side of semiconductor substrate 101 is cleaned with a cleaning fluid.
- a cleaning fluid in some embodiments.
- Both sides are cleaned with a cleaning fluid in some embodiments.
- Both sides can be cleaned through one step or two steps (a respective step for each respective side).
- Examples of a suitable cleaning fluid include but are not limited to deionized (DI) water, solvents, or any combination thereof.
- the cleaning fluid is DI water in some embodiments.
- the cleaning fluid can be applied through spraying, rinsing or any other suitable methods. DI water is sprayed onto either the front side or the back side of a semiconductor substrate 101 in some embodiments. Mechanical forces can be also used in combination of the cleaning fluid in some embodiments.
- the semiconductor device being fabricated can be dried or baked, for example, at a temperature in the range of 50° C. to 100° C.
- the resulting structure after step 410 is illustrated in FIG. 1F .
- method 400 further comprises steps 412 , 414 , 416 , and 418 .
- a second photoresist layer 120 is coated inside trench 109 over the front side of semiconductor substrate 101 .
- the resulting structure of the portion of the semiconductor device after step 412 is illustrated in FIG. 1G .
- the second photoresist layer 120 can be either negative or positive photoresist, and can be the same as, or different from, photoresist layer 110 .
- a via hole 111 is formed inside the ES layer 104 through photoresist patterning.
- FIG. 1H illustrates the resulting structure of the portion of the semiconductor device being fabricated after step 414 .
- the step of forming the via hole 111 includes a dry etch process.
- photoresist layer 120 can be exposed to UV light or other irradiation under a mask.
- a portion of the ES layer 104 is plasma-etched to form the via hole 111 as shown in FIG. 1H .
- the remaining photoresist layer 120 can also be dry-etched, for example, using plasma.
- photoresist residues 122 may exist inside the via hole 111 , on the front surface of semiconductor substrate 101 (e.g., on the surface of HM layer 108 ), and/or the back surface of semiconductor substrate 101 .
- At step 416 at least one of the front side and the back side of the semiconductor substrate 101 is exposed to an atmosphere comprising active oxygen as illustrated in FIGS. 1I and 1J , for the exposure of the front side and the back side of substrate 101 , respectively.
- at least the back side or a portion of the back side of substrate 101 is exposed.
- Step 416 is identical to step 408 described above.
- such an exposure at step 416 is performed by irradiating semiconductor substrate 101 with UV in an atmosphere comprising ozone (O 3 ).
- semiconductor substrate 101 is irradiated with UV in ozone at a temperature in the range of from 100° C. to 400° C., for example, from 260° C.
- Both the front side and the back side of semiconductor substrate 101 are simultaneously exposed to UV irradiation in an atmosphere comprising ozone (O 3 ) in some embodiments.
- An apparatus suitable for such exposure are described in FIGS. 2A-2D and 3 A- 3 D.
- step 418 at least one of the front side and the back side of the semiconductor substrate 101 is cleaned with a cleaning fluid. At least the front side is cleaned with a cleaning fluid in some embodiments.
- Step 418 is identical to step 410 described above.
- the semiconductor device being fabricated is cleaned through spraying DI water onto both the front side and the back side of semiconductor substrate 101 in some embodiments.
- a drying or baking step is followed after cleaning.
- the resulting structure after step 418 is shown in FIG. 1K .
- the via hole 111 is connected with a bottom surface of the trench and a top surface of conductive layer 102 .
- the trench 109 and via hole 111 can be filled with a conductive material in a subsequent process.
- Method 400 is an exemplary method described for illustration purpose.
- FIG. 6 illustrates a general method 600 of removing photoresist residue after dry etch during fabrication of a semiconductor device in accordance with some embodiments.
- method 600 comprises steps 602 , 604 and 606 .
- a photoresist layer disposed over a front side of a semiconductor substrate 101 is etched.
- Semiconductor substrate 101 has a back side opposite to the front side.
- the etching step 602 includes a dry etch process, for example, using plasma.
- step 604 at least one of the front side and the back side of the semiconductor substrate 101 is exposed to an atmosphere comprising active oxygen.
- a portion of the back side of semiconductor substrate 101 is exposed in some embodiments.
- Step 604 is identical to step 408 described above.
- such exposure is performed by irradiating the semiconductor substrate with ultra violet (UV) light in an atmosphere comprising ozone (O 3 ).
- UV ultra violet
- O 3 ozone
- such exposure is performed by exposing the semiconductor substrate to an atmosphere comprising oxygen plasma.
- both the front side and the back side of semiconductor substrate 101 are simultaneously exposed to an atmosphere comprising active oxygen.
- Step 606 at least one of the front side and the back side of the semiconductor substrate 101 is cleaned with a cleaning fluid.
- the cleaning fluid is deionized (DI) water.
- Method 600 can further comprise additional steps 604 and 606 .
- additional steps 604 and 606 are used.
- the present disclosure also provides an apparatus which can be used for the process described above.
- the apparatus comprises a top lamp module for generating UV light to irradiate one side of a semiconductor substrate, and at least one side UV module configured to generate or reflect UV light to irradiate the other side of the semiconductor substrate.
- FIGS. 2A-2D illustrate an exemplary apparatus 200 comprising a top UV lamp module 214 and a side UV lamp module 220 configured to irradiate both the front and the back surfaces of a semiconductor wafer 101 in accordance with some embodiments.
- FIG. 2A is a cross-sectional view of the bottom part 200 - 1 of apparatus 200 .
- FIG. 2B is a schematic top-down view of the bottom part 200 - 1 of apparatus 200 .
- FIG. 2C is a cross-sectional view of the top part 200 - 2 of apparatus 200 .
- FIG. 2D is a schematic top-down view of the top part 200 - 1 of apparatus 200 showing an exemplary configuration of the top UV lamp module 214 .
- Apparatus 200 comprises a chamber 202 , a UV transparent window 204 on a top surface of chamber 202 , a wafer chuck 210 inside chamber 202 and below the UV transparent window 204 , a top lamp module 214 above the UV transparent window 204 , and at least one side UV module 220 inside chamber 202 .
- wafer chuck 210 inside chamber 202 is configured to hold a semiconductor substrate 101 .
- semiconductor substrate 101 has two sides including has a front side and a back side.
- Wafer chuck 210 is coupled with the bottom of chamber 202 through a support stage 212 in some embodiments.
- wafer chuck 210 is configured to heat up to a temperature in the range of from 100° C. to 400° C., for example, 260° C. to 280° C.
- the UV transparent window 204 can be made of a material which is transparent to UV light.
- the UV transparent window 204 is a quartz window in some embodiments.
- a pumping ring is located underneath the UV transparent window 204 in some embodiments.
- the top lamp module 214 has at least one UV lamp 216 , which is configured to generate UV light 114 and irradiate the front side of a semiconductor substrate 101 through the UV transparent window 204 .
- the wavelength of UV light is in the range of 200 nm to 400 nm.
- a dome reflector 213 is disposed above the at least one UV lamp 216 in some embodiments. Dome reflector 213 is configured to reflect UV light toward the UV transparent window 204 .
- the chamber wall 212 on the top part of apparatus 200 is connected with chamber 202 in some embodiments.
- the at least one side UV module 220 is configured to generate UV light to irradiate the back side of a semiconductor substrate 101 above wafer chuck 210 in some embodiments.
- Chamber 202 is also configured to provide a reactive gas therein in some embodiments.
- Chamber 202 comprises a feeding inlet and a vacuum port (not shown).
- the reactive gas provided in the chamber comprises ozone.
- the reactive gas can be provided into an inlet (not shown) on a wall of the chamber 202 .
- An inlet may be also fluidly connected with a manifold (not shown) inside the chamber 202 below the UV transparent window 204 and above wafer chuck 210 . Both the inlet and manifold can be fluidly connected with an outlet on a wall of the chamber 202 .
- FIGS. 3A-3D illustrate an exemplary apparatus 300 comprising a top UV lamp module 214 and a side UV reflector 221 configured to irradiate both the front and the back surfaces of a semiconductor wafer 101 in accordance with some embodiments.
- FIG. 3A is a cross-sectional view of the bottom part 300 - 1 of apparatus 300 .
- FIG. 3B is a schematic top-down view of the bottom part 300 - 1 of apparatus 300 .
- FIG. 3C is a cross-sectional view of the top part 300 - 2 of apparatus 300 .
- FIG. 3D is a schematic top-down view of the top part 300 - 1 of apparatus 300 showing an exemplary configuration of the top UV lamp module 214 .
- Apparatus 300 is similar to apparatus 200 described above, except that the at least one side UV module is at least one side reflector 221 configured to reflect UV light from the top lamp module 214 to the back side of a semiconductor substrate in some embodiments.
- the present disclosure provides a method for removing photoresist residue during fabrication of semiconductor device, a method for making a semiconductor device having via hole which comprises a method of removing photoresist residue, and an apparatus which can be used for the process in accordance with some embodiments.
- the present disclosure a method for removing photoresist residue during fabrication of semiconductor device.
- the method comprises dry etching a photoresist layer disposed over a front side of a semiconductor substrate during fabrication of a semiconductor device.
- the semiconductor substrate has a back side opposite to the front side.
- the method further comprises exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen, and cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid.
- the method further comprises additional steps of exposing at least one of the front side and the back side of the semiconductor substrate to atmosphere comprising active oxygen; and cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid.
- exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen is performed by irradiating the semiconductor substrate with ultra violet (UV) light in an atmosphere comprising ozone (O 3 ).
- exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen is performed by exposing the semiconductor substrate to an atmosphere comprising oxygen plasma.
- both the front side and the back side of the semiconductor substrate are simultaneously exposed to an atmosphere comprising active oxygen.
- the cleaning fluid is deionized (DI) water.
- the present disclosure provides a method for making a semiconductor device having via hole.
- a method comprises a method of removing photoresist residue in accordance with some embodiments.
- the method comprises forming a conductive layer, an etch stop (ES) layer, a dielectric layer and a hard mask (HM) layer over a front side of a semiconductor substrate.
- the semiconductor substrate has a back side opposite to the front side.
- the method further comprises patterning a photoresist layer over the front side of the semiconductor substrate; forming a trench through the HM layer and in the dielectric layer through photoresist patterning; exposing at least the back side of the semiconductor substrate to an atmosphere comprising active oxygen; and cleaning at least the front side of the semiconductor substrate with a cleaning fluid.
- the step of forming a conductive layer, an ES layer, a dielectric layer and a HM layer comprises: forming a conductive layer over the front side of the semiconductor substrate; forming an ES layer over the conductive layer; forming a dielectric layer over the ES layer; and depositing a HM layer over the dielectric layer.
- the step of forming the trench includes a dry etch process.
- exposing at least the back side of the semiconductor substrate to an atmosphere comprising active oxygen is performed by exposing the semiconductor substrate to an atmosphere comprising oxygen plasma.
- exposing at least the back side of the semiconductor substrate to an atmosphere comprising active oxygen is performed by irradiating the semiconductor substrate with UV in an atmosphere comprising ozone (O 3 ).
- the semiconductor substrate is irradiated with UV in ozone at a temperature in the range of from 100° C. to 400° C., for example, from 260° C. to 280° C. for a time interval in the range of from 1 second to 100 seconds in some embodiments.
- Both the front side and the back side of the semiconductor substrate are simultaneously exposed to UV irradiation in an atmosphere comprising ozone (O 3 ) in some embodiments.
- the method further comprises patterning a second photoresist layer inside the trench over the front side of the semiconductor substrate; forming a via hole inside the ES layer; exposing at least the back side of the semiconductor substrate to an atmosphere comprising active oxygen; and cleaning at least the front side of the semiconductor substrate with a cleaning fluid.
- the via hole is connected with a bottom surface of the trench and a top surface of the conductive layer.
- the present disclosure provides an apparatus.
- the apparatus comprises a chamber; a UV transparent window on a top surface of the chamber; a wafer chuck inside the chamber and below the UV transparent window; a top lamp module above the UV transparent window; and at least one side UV module inside the chamber.
- the chamber is configured to provide a reactive gas therein.
- the wafer chuck is configured to hold a semiconductor substrate having a front side and a back side.
- the top lamp module has at least one UV lamp, which are configured to generate UV light and irradiate the front side of a semiconductor substrate through the UV transparent window.
- the at least one side UV module is configured to generate or reflect UV light to irradiate at least one portion of the back side of a semiconductor substrate.
- the at least one side UV module is at least one side UV lamp configured to generate UV light emitting toward the back side of a semiconductor substrate. In some embodiments, the at least one side UV module is at least one side reflector configured to reflect UV light from the top lamp module to the back side of a semiconductor substrate. In some embodiments, the reactive gas provided in the chamber comprises ozone. In some embodiments, the UV transparent window is a quartz window. In some embodiments, the wafer chuck is configured to heat up to a temperature in the range of from 100° C. to 400° C.
Abstract
Description
- This application is a divisional application of U.S. patent application Ser. No. 13/785,172, filed Mar. 5, 2013, which application is expressly incorporated by reference herein in its entirety.
- This disclosure relates to semiconductor processing and equipment. More particularly, the disclosed subject matter relates to a process and an apparatus of removing photoresist residues produced in the fabrication of semiconductor device.
- Photoresists are commonly used in photolithography processes during fabrication of semiconductor devices comprising integrated circuits (IC). In the fabrication processes, photoresists are also used for patterning. Photoresist patterning includes process steps such as photoresist coating, softbaking, mask aligning, pattern exposing, photoresist development, and hard baking. Photoresists are eventually removed through dry or wet etching, stripping and/or other cleaning processes.
- Any photoresist residues remaining on the semiconductor device will affect the quality of subsequent processing steps, and may even damage structures of semiconductor devices. Meanwhile, as sizes of active circuit elements in ICs continues to decrease, with corresponding increases in the pattern densities of circuits in these ICs, quality of each processing step and resulting features of devices should be precisely controlled.
- Via holes are through holes made in a substrate, for different purposes. For example, via holes are used to connect circuit patterns in adjacent metal layers, or to ground semiconductor devices and passive devices. Via holes are made through dielectric layers, for subsequent metal deposition to form a plug and create interconnect between two metal lines in different layers. Multi-level interconnect schemes employ such via holes in large numbers. Processes used to perform such interconnection using via holes include the single damascene process and the dual-damascene process.
- The present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It is emphasized that, according to common practice, the various features of the drawings are not necessarily to scale. On the contrary, the dimensions of the various features are arbitrarily expanded or reduced for clarity. Like reference numerals denote like features throughout specification and drawings.
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FIGS. 1A-1K are cross-sectional views of a portion of a semiconductor device during fabrication, illustrating an exemplary process of forming a via hole which comprises a method of removing photoresist residue after dry etch in accordance with some embodiments. -
FIGS. 2A-2D illustrate an exemplary apparatus comprising a top UV lamp module and a side UV lamp module configured to irradiate both the front and the back surfaces of a semiconductor wafer in accordance with some embodiments. -
FIGS. 3A-3D illustrate an exemplary apparatus comprising a top UV lamp module and a side UV reflector configured to irradiate both the front and the back surfaces of a semiconductor wafer in accordance with some embodiments. -
FIGS. 4A-4B are flow chart diagrams illustrating an exemplary method of forming a via hole which comprises a method of removing photoresist residue after dry etch in accordance with some embodiments. -
FIG. 5 is a flow chart diagram illustrating a method of forming a conductive layer, an etch stop layer, a dielectric layer and a hard mask layer over a front side of a semiconductor substrate in accordance with some embodiments. -
FIG. 6 is a flow chart diagram illustrating a method of removing photoresist residue after dry etching in accordance with some embodiments. - This description of the exemplary embodiments is intended to be read in connection with the accompanying drawings, which are to be considered part of the entire written description. In the description, relative terms such as “lower,” “upper,” “horizontal,” “vertical,”, “above,” “below,” “up,” “down,” “top” and “bottom” as well as derivative thereof (e.g., “horizontally,” “downwardly,” “upwardly,” etc.) should be construed to refer to the orientation as then described or as shown in the drawing under discussion. These relative terms are for convenience of description and do not require that the apparatus be constructed or operated in a particular orientation. Terms concerning attachments, coupling and the like, such as “connected” and “interconnected,” refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.
- The semiconductor devices such as CMOS devices continue to be scaled to smaller sizes to meet advanced performance. Fabrication of device with such small dimensions involves precise controls. When photoresists are commonly used during fabrication of semiconductor process, it becomes increasingly important to thoroughly clean any photoresist residues remaining on the semiconductor device, especially those remaining inside trenches and via holes.
- After a process of photoresist patterning including plasma etching, a scrubbing process can be used to remove photoresist. A cleaning fluid such as water is sprayed onto a front side surface of a wafer having photoresists, optionally in combination with the use of mechanical force. However, some polymer defects resulting from the photoresist residues could still be found inside trenches and via holes, on a front side surface, and even a back side of a wafer. In some embodiments, these photoresist residues are to be more thoroughly removed before a next step of process.
- The present disclosure provides a method for removing photoresist residue during fabrication of semiconductor device, a method for making a semiconductor device having a via hole which comprises removing photoresist residue, and an apparatus which can be used for the process in accordance with some embodiments. The inventors have determined that photoresist residues are better or completely removed, after exposing at least one or both of the front side and a portion of the back side of a semiconductor wafer to an atmosphere comprising active oxygen after a process of photoresist patterning.
- Unless expressly indicated otherwise, references to “active oxygen” made in this disclosure will be understood to encompass a reactive chemical species comprising oxygen which can oxidize photoresist used during a process of fabricating a semiconductor device. The reactive chemical species comprising oxygen can dissociate into atomic oxygen, oxygen radical, oxygen ions, or any other oxygen-containing reactive species which can react with chemical linkages in the photoresist such as C—H and C—C bonds. Examples of such an atmosphere comprising active oxygen include but are not limited to atmosphere comprising ozone (O3) or other oxygen-containing species under ultra violet (UV) light, and oxygen containing plasma. In
FIGS. 1A-1K ,FIGS. 2A-2D andFIGS. 3A-3D , like items are indicated by like reference numerals, and for brevity, descriptions of the structure, provided above with reference to the previous figures, are not repeated. The methods described inFIGS. 4A-4B are described with reference to the exemplary structures described inFIGS. 1A-1K . -
FIGS. 4A-4B are flow chart diagrams illustrating anexemplary method 400 of forming a via hole in accordance with some embodiments.FIGS. 1A-1K are cross-sectional views of a portion of a semiconductor device during fabrication, illustrating theexemplary process 400 in accordance with some embodiments. -
Step 402 is a process comprising forming aconductive layer 102, an etch stop (ES)layer 104, adielectric layer 106 and a hard mask (HM)layer 108 over a front side of asemiconductor substrate 101.FIG. 5 illustrate an exemplary process of forming aconductive layer 102, anES layer 104, adielectric layer 106 and aHM layer 108 over asemiconductor substrate 101 in accordance with some embodiments. The structure of a portion of a semiconductor device having these layers is shown inFIG. 1A . -
Substrate 101 is shown in phantom inFIG. 1A-1K .Semiconductor substrate 101 has a back side surface opposite to the front side surface.Substrate 101 can be a wafer comprising a semiconductor material. Examples of suitable materials forsubstrate 101 include but are not limited to silicon, germanium, a compound semiconductor, and a semiconductor-on-insulator (SOI) substrate. A compound semiconductor can be an III-V semiconductor compound such as gallium arsenide (GaAs). An SOI substrate can comprise a semiconductor on an insulator such as glass.Substrate 101 is silicon in some embodiments. - At
step 502 ofFIG. 5 , aconductive layer 102 is formed over the front side ofsemiconductor substrate 101. Examples of a suitable material forconductive layer 102 include but are not limited to aluminum, copper, titanium, tantalum, tungsten, molybdenum, platinum, tantalum nitride (TaN), titanium nitride (TiN), tungsten nitride (WN), titanium aluminum (TiAl), titanium aluminum nitride (TiAlN), TaCN, TaC, TaSiN, other conductive material, or combinations thereof.Conductive layer 102 is copper in some embodiments.Conductive layer 102 can be formed by using chemical vapor deposition (CVD), high density plasma CVD, sputtering, or other suitable method. - At
step 504 ofFIG. 5 , etch stop (ES)layer 104 is formed overconductive layer 102.ES layer 104 can be formed of silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, combinations thereof, or other suitable materials. In some embodiments,ES layer 104 is formed of silicon nitride.ES layer 104 can be formed by using chemical vapor deposition (CVD), high density plasma CVD, sputtering, or other suitable method. - At
step 506, adielectric layer 106 is formed overES layer 104. Examples of suitable materials fordielectric layer 106 include but are not limited to silicon oxide, silicon oxynitride, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), combinations thereof, or other suitable material.Dielectric layer 106 can be formed by using CVD, high density plasma CVD, spin-on, sputtering, or other suitable method. - At
step 508 ofFIG. 5 , a hard mask (HM)layer 108 is deposited overdielectric layer 106. Examples of a suitable material forhard mask 108 include but are not limited to silicon oxide, silicon nitride (e.g., Si3N4), SiON, SiC, SiOC, or any combination thereof. In some embodiments,hard mask layer 108 comprises silicon oxide. - At
step 404 ofFIG. 4A , aphotoresist layer 110 is coated and patterned over the front side of thesemiconductor substrate 101. The resulting structure is illustrated inFIG. 1B .Photoresist layer 110 can be formed of either a positive or a negative photoresist material.Photoresist layer 110 can be coated through spin-on or other suitable method. - At
step 406, atrench 109 is formed throughHM layer 108 and indielectric layer 106 through photoresist patterning. The resulting structure is shown inFIG. 1C . In some embodiments, the step of forming thetrench 109 includes a dry etch process. For example,photoresist layer 110 can be exposed to UV light or other irradiation under a mask. Afterphotoresist layer 110 is developed, a portion ofHM layer 108 anddielectric layer 106 are plasma-etched to form atrench 109 as shown inFIG. 1C . The remainingphotoresist layer 110 can also be dry-etched, for example, using plasma. However,photoresist residues 112 may exist insidetrench 109, on the front surface of semiconductor substrate 101 (e.g., on the surface of HM layer 108), and/or the back surface ofsemiconductor substrate 101. - At
step 408, at least one of the front side and the back side ofsemiconductor substrate 101 is exposed to an atmosphere comprising active oxygen, as shown inFIG. 1D andFIG. 1E .FIGS. 1D and 1E illustrate the exposure of the front side and the back side ofsemiconductor substrate 101, respectively. In some embodiments, at least the back side or a portion of the back side ofsemiconductor 101 is exposed atstep 408. - In some embodiments, such exposure at
step 408 is performed by exposingsemiconductor substrate 101 to an atmosphere comprising oxygen plasma. Oxygen containing plasma can be generated under radio frequency (RF) energy using chemical precursors such as oxygen gas. Low dosage of oxygen containing plasma is desirable in such exposure. The plasma flow is in the range of from 1,000 sccm to 10,000 sccm, for example, at about 2000 sccm. - In some embodiments, such an exposure at
step 408 is performed by irradiatingsemiconductor substrate 101 with UV in an atmosphere comprising ozone (O3). For example,semiconductor substrate 101 is irradiated with UV in ozone at a temperature in the range of from 100° C. to 400° C., for example, from 260° C. to 280° C., or about 300° C. for a time interval in the range of from 1 second to 100 seconds, for example, from 40 second to 80 seconds, in some embodiments. O3 flow is in the range of from about 1,000 to about 10,000 sccm, or about 2,000 sccm with other carrier gas such as He, Ar, N2 and H2. - Both the front side and the back side of
semiconductor substrate 101 are simultaneously exposed to UV irradiation in an atmosphere comprising ozone (O3) in some embodiments. At least a portion of the back side ofsemiconductor substrate 101 is exposed. An exemplary apparatus suitable for such an exposure is described inFIGS. 2A-2D , and 3A-3D. - At
step 410, at least one of the front side and the back side ofsemiconductor substrate 101 is cleaned with a cleaning fluid. At least the front side is cleaned with a cleaning fluid in some embodiments. Both sides are cleaned with a cleaning fluid in some embodiments. Both sides can be cleaned through one step or two steps (a respective step for each respective side). Examples of a suitable cleaning fluid include but are not limited to deionized (DI) water, solvents, or any combination thereof. The cleaning fluid is DI water in some embodiments. The cleaning fluid can be applied through spraying, rinsing or any other suitable methods. DI water is sprayed onto either the front side or the back side of asemiconductor substrate 101 in some embodiments. Mechanical forces can be also used in combination of the cleaning fluid in some embodiments. - After cleaning, photoresist residues are removed. The semiconductor device being fabricated can be dried or baked, for example, at a temperature in the range of 50° C. to 100° C. The resulting structure after
step 410 is illustrated inFIG. 1F . - Referring to
FIG. 4B , in accordance with some embodiments,method 400 further comprisessteps step 412, asecond photoresist layer 120 is coated insidetrench 109 over the front side ofsemiconductor substrate 101. The resulting structure of the portion of the semiconductor device afterstep 412 is illustrated inFIG. 1G . Thesecond photoresist layer 120 can be either negative or positive photoresist, and can be the same as, or different from,photoresist layer 110. - At
step 414, a viahole 111 is formed inside theES layer 104 through photoresist patterning.FIG. 1H illustrates the resulting structure of the portion of the semiconductor device being fabricated afterstep 414. Similar to step 406, in some embodiments, the step of forming the viahole 111 includes a dry etch process. For example,photoresist layer 120 can be exposed to UV light or other irradiation under a mask. Afterphotoresist layer 120 is developed, a portion of theES layer 104 is plasma-etched to form the viahole 111 as shown inFIG. 1H . The remainingphotoresist layer 120 can also be dry-etched, for example, using plasma. However,photoresist residues 122 may exist inside the viahole 111, on the front surface of semiconductor substrate 101 (e.g., on the surface of HM layer 108), and/or the back surface ofsemiconductor substrate 101. - At
step 416, at least one of the front side and the back side of thesemiconductor substrate 101 is exposed to an atmosphere comprising active oxygen as illustrated inFIGS. 1I and 1J , for the exposure of the front side and the back side ofsubstrate 101, respectively. In some embodiments, at least the back side or a portion of the back side ofsubstrate 101 is exposed. Step 416 is identical to step 408 described above. In some embodiments, such an exposure atstep 416 is performed by irradiatingsemiconductor substrate 101 with UV in an atmosphere comprising ozone (O3). For example,semiconductor substrate 101 is irradiated with UV in ozone at a temperature in the range of from 100° C. to 400° C., for example, from 260° C. to 280° C., for a time interval in the range of from 1 second to 100 seconds, for example, from 40 second to 80 seconds, in some embodiments. Both the front side and the back side ofsemiconductor substrate 101 are simultaneously exposed to UV irradiation in an atmosphere comprising ozone (O3) in some embodiments. An apparatus suitable for such exposure are described inFIGS. 2A-2D and 3A-3D. - At
step 418, at least one of the front side and the back side of thesemiconductor substrate 101 is cleaned with a cleaning fluid. At least the front side is cleaned with a cleaning fluid in some embodiments. Step 418 is identical to step 410 described above. For example, the semiconductor device being fabricated is cleaned through spraying DI water onto both the front side and the back side ofsemiconductor substrate 101 in some embodiments. A drying or baking step is followed after cleaning. The resulting structure afterstep 418 is shown inFIG. 1K . As shown inFIG. 1K , the viahole 111 is connected with a bottom surface of the trench and a top surface ofconductive layer 102. Thetrench 109 and viahole 111 can be filled with a conductive material in a subsequent process. -
Method 400 is an exemplary method described for illustration purpose.FIG. 6 illustrates ageneral method 600 of removing photoresist residue after dry etch during fabrication of a semiconductor device in accordance with some embodiments. - Referring to
FIG. 6 ,method 600 comprisessteps step 602, a photoresist layer disposed over a front side of asemiconductor substrate 101 is etched.Semiconductor substrate 101 has a back side opposite to the front side. In some embodiments, theetching step 602 includes a dry etch process, for example, using plasma. - At
step 604, at least one of the front side and the back side of thesemiconductor substrate 101 is exposed to an atmosphere comprising active oxygen. A portion of the back side ofsemiconductor substrate 101 is exposed in some embodiments. Step 604 is identical to step 408 described above. For example, in some embodiments, such exposure is performed by irradiating the semiconductor substrate with ultra violet (UV) light in an atmosphere comprising ozone (O3). In other embodiments, such exposure is performed by exposing the semiconductor substrate to an atmosphere comprising oxygen plasma. In some embodiments, both the front side and the back side ofsemiconductor substrate 101 are simultaneously exposed to an atmosphere comprising active oxygen. - At
step 606, at least one of the front side and the back side of thesemiconductor substrate 101 is cleaned with a cleaning fluid. Step 606 is identical to step 410 described above. For example, in some embodiments, the cleaning fluid is deionized (DI) water. -
Method 600 can further compriseadditional steps second step 604 is used. - The present disclosure also provides an apparatus which can be used for the process described above. The apparatus comprises a top lamp module for generating UV light to irradiate one side of a semiconductor substrate, and at least one side UV module configured to generate or reflect UV light to irradiate the other side of the semiconductor substrate.
-
FIGS. 2A-2D illustrate an exemplary apparatus 200 comprising a topUV lamp module 214 and a sideUV lamp module 220 configured to irradiate both the front and the back surfaces of asemiconductor wafer 101 in accordance with some embodiments.FIG. 2A is a cross-sectional view of the bottom part 200-1 of apparatus 200.FIG. 2B is a schematic top-down view of the bottom part 200-1 of apparatus 200.FIG. 2C is a cross-sectional view of the top part 200-2 of apparatus 200.FIG. 2D is a schematic top-down view of the top part 200-1 of apparatus 200 showing an exemplary configuration of the topUV lamp module 214. - Apparatus 200 comprises a
chamber 202, a UVtransparent window 204 on a top surface ofchamber 202, awafer chuck 210 insidechamber 202 and below the UVtransparent window 204, atop lamp module 214 above the UVtransparent window 204, and at least oneside UV module 220 insidechamber 202. - As shown in
FIG. 2A ,wafer chuck 210 insidechamber 202 is configured to hold asemiconductor substrate 101. As described inFIG. 1A ,semiconductor substrate 101 has two sides including has a front side and a back side.Wafer chuck 210 is coupled with the bottom ofchamber 202 through asupport stage 212 in some embodiments. In some embodiments,wafer chuck 210 is configured to heat up to a temperature in the range of from 100° C. to 400° C., for example, 260° C. to 280° C. - The UV
transparent window 204 can be made of a material which is transparent to UV light. The UVtransparent window 204 is a quartz window in some embodiments. A pumping ring is located underneath the UVtransparent window 204 in some embodiments. - Referring to
FIG. 2C-2D , above the UVtransparent window 204, thetop lamp module 214 has at least oneUV lamp 216, which is configured to generateUV light 114 and irradiate the front side of asemiconductor substrate 101 through the UVtransparent window 204. The wavelength of UV light is in the range of 200 nm to 400 nm. Adome reflector 213 is disposed above the at least oneUV lamp 216 in some embodiments.Dome reflector 213 is configured to reflect UV light toward the UVtransparent window 204. Thechamber wall 212 on the top part of apparatus 200 is connected withchamber 202 in some embodiments. - Referring to
FIG. 2A-2B , below the UVtransparent window 204, the at least oneside UV module 220 is configured to generate UV light to irradiate the back side of asemiconductor substrate 101 abovewafer chuck 210 in some embodiments.Chamber 202 is also configured to provide a reactive gas therein in some embodiments.Chamber 202 comprises a feeding inlet and a vacuum port (not shown). In some embodiments, the reactive gas provided in the chamber comprises ozone. The reactive gas can be provided into an inlet (not shown) on a wall of thechamber 202. An inlet may be also fluidly connected with a manifold (not shown) inside thechamber 202 below the UVtransparent window 204 and abovewafer chuck 210. Both the inlet and manifold can be fluidly connected with an outlet on a wall of thechamber 202. -
FIGS. 3A-3D illustrate an exemplary apparatus 300 comprising a topUV lamp module 214 and aside UV reflector 221 configured to irradiate both the front and the back surfaces of asemiconductor wafer 101 in accordance with some embodiments.FIG. 3A is a cross-sectional view of the bottom part 300-1 of apparatus 300.FIG. 3B is a schematic top-down view of the bottom part 300-1 of apparatus 300.FIG. 3C is a cross-sectional view of the top part 300-2 of apparatus 300.FIG. 3D is a schematic top-down view of the top part 300-1 of apparatus 300 showing an exemplary configuration of the topUV lamp module 214. Apparatus 300 is similar to apparatus 200 described above, except that the at least one side UV module is at least oneside reflector 221 configured to reflect UV light from thetop lamp module 214 to the back side of a semiconductor substrate in some embodiments. - The present disclosure provides a method for removing photoresist residue during fabrication of semiconductor device, a method for making a semiconductor device having via hole which comprises a method of removing photoresist residue, and an apparatus which can be used for the process in accordance with some embodiments.
- In one aspect, the present disclosure a method for removing photoresist residue during fabrication of semiconductor device. The method comprises dry etching a photoresist layer disposed over a front side of a semiconductor substrate during fabrication of a semiconductor device. The semiconductor substrate has a back side opposite to the front side. The method further comprises exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen, and cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid. In some embodiments, the method further comprises additional steps of exposing at least one of the front side and the back side of the semiconductor substrate to atmosphere comprising active oxygen; and cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid.
- In some embodiments, exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen is performed by irradiating the semiconductor substrate with ultra violet (UV) light in an atmosphere comprising ozone (O3). In other embodiments, exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen is performed by exposing the semiconductor substrate to an atmosphere comprising oxygen plasma. In some embodiments, both the front side and the back side of the semiconductor substrate are simultaneously exposed to an atmosphere comprising active oxygen. In some embodiments, the cleaning fluid is deionized (DI) water.
- In another aspect, the present disclosure provides a method for making a semiconductor device having via hole. Such a method comprises a method of removing photoresist residue in accordance with some embodiments. The method comprises forming a conductive layer, an etch stop (ES) layer, a dielectric layer and a hard mask (HM) layer over a front side of a semiconductor substrate. The semiconductor substrate has a back side opposite to the front side. The method further comprises patterning a photoresist layer over the front side of the semiconductor substrate; forming a trench through the HM layer and in the dielectric layer through photoresist patterning; exposing at least the back side of the semiconductor substrate to an atmosphere comprising active oxygen; and cleaning at least the front side of the semiconductor substrate with a cleaning fluid.
- In such a method in accordance with some embodiments, the step of forming a conductive layer, an ES layer, a dielectric layer and a HM layer comprises: forming a conductive layer over the front side of the semiconductor substrate; forming an ES layer over the conductive layer; forming a dielectric layer over the ES layer; and depositing a HM layer over the dielectric layer. In some embodiments, the step of forming the trench includes a dry etch process. In some embodiments, exposing at least the back side of the semiconductor substrate to an atmosphere comprising active oxygen is performed by exposing the semiconductor substrate to an atmosphere comprising oxygen plasma. In some embodiments, exposing at least the back side of the semiconductor substrate to an atmosphere comprising active oxygen is performed by irradiating the semiconductor substrate with UV in an atmosphere comprising ozone (O3). For example, the semiconductor substrate is irradiated with UV in ozone at a temperature in the range of from 100° C. to 400° C., for example, from 260° C. to 280° C. for a time interval in the range of from 1 second to 100 seconds in some embodiments. Both the front side and the back side of the semiconductor substrate are simultaneously exposed to UV irradiation in an atmosphere comprising ozone (O3) in some embodiments.
- In some embodiments, the method further comprises patterning a second photoresist layer inside the trench over the front side of the semiconductor substrate; forming a via hole inside the ES layer; exposing at least the back side of the semiconductor substrate to an atmosphere comprising active oxygen; and cleaning at least the front side of the semiconductor substrate with a cleaning fluid. The via hole is connected with a bottom surface of the trench and a top surface of the conductive layer.
- In another aspect, the present disclosure provides an apparatus. The apparatus comprises a chamber; a UV transparent window on a top surface of the chamber; a wafer chuck inside the chamber and below the UV transparent window; a top lamp module above the UV transparent window; and at least one side UV module inside the chamber. The chamber is configured to provide a reactive gas therein. The wafer chuck is configured to hold a semiconductor substrate having a front side and a back side. The top lamp module has at least one UV lamp, which are configured to generate UV light and irradiate the front side of a semiconductor substrate through the UV transparent window. The at least one side UV module is configured to generate or reflect UV light to irradiate at least one portion of the back side of a semiconductor substrate.
- In some embodiments, the at least one side UV module is at least one side UV lamp configured to generate UV light emitting toward the back side of a semiconductor substrate. In some embodiments, the at least one side UV module is at least one side reflector configured to reflect UV light from the top lamp module to the back side of a semiconductor substrate. In some embodiments, the reactive gas provided in the chamber comprises ozone. In some embodiments, the UV transparent window is a quartz window. In some embodiments, the wafer chuck is configured to heat up to a temperature in the range of from 100° C. to 400° C.
- Although the subject matter has been described in terms of exemplary embodiments, it is not limited thereto. Rather, the appended claims should be construed broadly, to include other variants and embodiments, which may be made by those skilled in the art.
Claims (20)
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US14/698,940 US20150249024A1 (en) | 2013-03-05 | 2015-04-29 | Method and equipment for removing photoresist residue afer dry etch |
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US13/785,172 US9048268B2 (en) | 2013-03-05 | 2013-03-05 | Method and equipment for removing photoresist residue after dry etch |
US14/698,940 US20150249024A1 (en) | 2013-03-05 | 2015-04-29 | Method and equipment for removing photoresist residue afer dry etch |
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US13/785,172 Division US9048268B2 (en) | 2013-03-05 | 2013-03-05 | Method and equipment for removing photoresist residue after dry etch |
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US14/698,940 Abandoned US20150249024A1 (en) | 2013-03-05 | 2015-04-29 | Method and equipment for removing photoresist residue afer dry etch |
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US10008384B2 (en) * | 2015-06-25 | 2018-06-26 | Varian Semiconductor Equipment Associates, Inc. | Techniques to engineer nanoscale patterned features using ions |
KR102614850B1 (en) * | 2016-10-05 | 2023-12-18 | 삼성전자주식회사 | Method of manufacuturing semiconductor device |
US10847429B1 (en) * | 2019-10-17 | 2020-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of detecting photoresist scum, method of forming semiconductor package and photoresist scum detection apparatus |
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US20140256138A1 (en) | 2014-09-11 |
US9048268B2 (en) | 2015-06-02 |
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