US20150027517A1 - Method and structure for tiling industrial thin-film solar devices - Google Patents

Method and structure for tiling industrial thin-film solar devices Download PDF

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Publication number
US20150027517A1
US20150027517A1 US14/514,185 US201414514185A US2015027517A1 US 20150027517 A1 US20150027517 A1 US 20150027517A1 US 201414514185 A US201414514185 A US 201414514185A US 2015027517 A1 US2015027517 A1 US 2015027517A1
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solar devices
thin
solar
cover plate
devices
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US14/514,185
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Robert D. Wieting
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CM Manufacturing Inc
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CM Manufacturing Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/02013Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells

Definitions

  • the present invention relates generally to photovoltaic techniques. More particularly, the present invention provides a method and structure for tiling solar devices to a transparent cover plate. Merely by example, embodiments of the present invention are applied to laminate two or more industrial-sized solar panels based on thin-film photovoltaic materials including copper indium diselenide species (CIS), copper indium gallium diselenide species (CIGS), and/or others.
  • CIS copper indium diselenide species
  • CGS copper indium gallium diselenide species
  • Petrochemical energy includes gas and oil.
  • Gas includes lighter forms such as butane and propane, commonly used to heat homes and serve as fuel for cooking
  • Gas also includes gasoline, diesel, and jet fuel, commonly used for transportation purposes. Heavier forms of petrochemicals can also be used to heat homes in some places.
  • the supply of petrochemical fuel is limited and essentially fixed based upon the amount available on the planet Earth. Additionally, as more people use petroleum products in growing amounts, it is rapidly becoming a scarce resource, which will eventually become depleted over time.
  • hydroelectric power is derived from electric generators driven by the flow of water produced by dams such as the Hoover Dam in Nevada. The electric power generated is used to power a large portion of the city of Los Angeles in California. Clean and renewable sources of energy also include wind, waves, biomass, and the like. That is, windmills convert wind energy into more useful forms of energy such as electricity. Still other types of clean energy include solar energy. Specific details of solar energy can be found throughout the present background and more particularly below.
  • Solar energy technology generally converts electromagnetic radiation from the sun to other useful forms of energy. These other forms of energy include thermal energy and electrical power.
  • solar cells are often used. Although solar energy is environmentally clean and has been successful to a point, many limitations remain to be resolved before it becomes widely used throughout the world.
  • one type of solar cell uses crystalline materials, which are derived from semiconductor material ingots. These crystalline materials can be used to fabricate optoelectronic devices that include photovoltaic and photodiode devices that convert electromagnetic radiation into electrical power.
  • crystalline materials are often costly and difficult to make on a large scale.
  • Other types of solar cells use “thin film” technology to form a thin film of photosensitive material to be used to convert electromagnetic radiation into electrical power.
  • the present invention relates generally to photovoltaic techniques. More particularly, the present invention provides a method and structure for tiling two or more solar devices to a transparent cover plate. Merely by example, the present invention is applied to laminate two or more thin-film solar devices having sizes of about 165 cm or greater.
  • the present invention provides a method for integrating photovoltaic module.
  • the method includes providing a cover plate having a first surface and a second surface opposed to the first surface.
  • the method further includes supplying two or more solar devices respectively formed on substrates.
  • Each of the two or more photovoltaic devices includes a plurality of photovoltaic cells electrically coupled to each other. Each cell is characterized by a thin-film photovoltaic layer sandwiched between a first electrode material and a second electrode material.
  • the first electrode material overlies the substrate and the second electrode material overlies the thin-film photovoltaic layer.
  • the method includes disposing the two or more solar devices side by side to laminate with the cover plate by means of a first organic material filled between the second electrode material and the second surface.
  • Each of the two or more solar devices has a peripheral edge region being sealed by a second organic material.
  • the method includes electrically coupling the two or more solar devices to each other.
  • the present invention provides a structure for tiling thin-film solar devices.
  • the structure includes a cover plate with at least a dimension of about 165 cm and greater in one direction including a front surface and a rear surface opposed to the front surface.
  • the structure includes two or more solar devices laminated side by side to the rear surface and electrically coupled to each other by a ribbon connector.
  • Each of the two or more solar devices includes a plurality of thin-film photovoltaic cells overlying a substrate.
  • Each of the thin-film photovoltaic cells has a stripe shaped pattern in parallel to each other.
  • the present invention provides numerous benefits over conventional techniques.
  • the method and structure provided in the present invention are compatible but scaled to very large industrial panels from conventional modules, which allow cost effective implementation of new generation integrated thin-film photovoltaic modules into large scale commercial applications.
  • the integrated solar module laminates two or more thin-film photovoltaic devices to a common cover plate. This effective enhances the power capacity of the solar module by extending either circuit current delivered from the entire module or the voltage level for coupling with outside electric contacts.
  • each of the two or more thin-film solar devices can have a dimension of 65 cm times 165 cm and be disposed side by side onto a hardened glass plate having a dimension of 165 cm or greater in one direction.
  • the encapsulation of the integrated module is compatible with stand alone module, so that additional cost saving in packaging process and material can be achieved by implementation of current invention. Additionally, scale up the stand alone thin-film solar device and their integration provide high quality with reduced cost but enhanced overall efficiency over 11%. There are other benefits as well.
  • FIG. 1 is a perspective view of a method and structure for tiling solar devices according to an embodiment of the present invention.
  • FIG. 2 illustrates a side view (A) and a bottom view (B) of a cover plate laminated to two solar devices according to an embodiment of the present invention.
  • FIG. 3 is a schematic cross-section view of a thin-film solar device according to an embodiment of the present invention.
  • FIG. 4 is a schematic top view of a thin-film solar device with stripe shaped cell patterns according to the embodiment of the present invention.
  • FIG. 5 illustrates a cross-section view (A) and a top view (B) of laminated solar devices including ribbon electric conductors according to an embodiment of the present invention.
  • FIG. 6 illustrates a cross-section view (A) and a top view (B) of laminated solar devices including ribbon electric conductors according to another embodiment of the present invention.
  • the present invention relates generally to photovoltaic techniques. More particularly, the present invention provides a method and structure for tiling two or more solar devices on a transparent cover plate. Merely by example, the present invention is applied to laminate two or more thin-film solar devices having about 165 cm or greater in form factor to a glass cover plate.
  • FIG. 1 is a perspective view of a method and structure for tiling solar devices according to an embodiment of the present invention.
  • a structure 1000 for tiling solar devices on to a cover plate is schematically broken down to a group of basic elements.
  • the structure 1000 includes a cover plate 100 , two or more solar devices 301 and 303 respectively formed on a substrate 311 and 313 , a sealant material 320 , a fill material 200 , a common conductor 400 , and a plurality of ribbon conductor 402 .
  • the cover plate is typically flat with a front surface on light-receiving side and a rear surface for attaching one or more solar devices.
  • the cover plate 100 has a thickness in the range of 0.5-10 mm, preferably 1-5 mm, and can be of any material that has sufficient transparency above the photovoltaic layer.
  • the cover plate is a cover glass, preferably hardened glass.
  • the cover plate 100 can be a polymeric material bearing an optical transparency characteristic.
  • the cover plate 100 has a large physical dimension capable of allowing two or more industrial sized solar devices together to be laminated thereon.
  • the dimension of the cover plate 100 may be at least 165 cm or greater in one direction.
  • the cover plate 100 can have various kinds of shapes including a rectangular shape.
  • the two or more solar devices 301 and 303 are attached to the rear surface of the cover plate 100 . Normally, the two or more solar devices are not covering all area of the cover plate 100 . In an embodiment, the two or more solar devices 301 and 303 are disposed side by side having some additional gaps in between.
  • Each of the solar devices 301 and 303 is substantially a kind of thin-film solar devices having a rectangular shape with its length substantially fitted to the cover plate 100 in one direction and total width of all solar devices plus the addition gaps substantially fitted with the cover plate 100 in another direction.
  • the thin-film solar device 301 or 303 is made from a chalcopyrite semiconductor thin film photovoltaic active layer sandwiched by two electrode layers, an upper electrode and a lower electrode.
  • the chalcopyrite semiconductor thin film photovoltaic active layer includes copper indium diselenide absorber overlapped by an optical transparent cadmium sulfide window layer.
  • the upper-electrode overlying the window layer is also optical transparent allowing photons to be absorbed by the photovoltaic layer below and converted into electrons.
  • each cell has a strip shape in parallel to all other cells.
  • the strip shape of each cell is about 6 millimeters in width and has a length up to the substrate except some boarder region at two ends.
  • a polymeric sealant material 320 such as a polymer tape, is applied to protect the solar device from ingress of moisture.
  • an opaque frame region 105 is formed on the rear surface for block light and in particular UV irradiation to the polymer material of the photovoltaic cells.
  • the rest portion, or the major area, of the cover plate 100 is substantially transparent for full spectrum of the sun light overlying the plurality of thin-film photovoltaic cells in stripe shape.
  • each of the two or more solar devices is laminated its upper-electrode surface to the rear surface of the cover plate by means of the fill material 200 .
  • the fill material is an organic polymer material bearing both characteristics of mechanical bonding and optical transparency.
  • the fill material 200 is a transparent polymer selected from ethylene vinyl acetate (EVA) and polyvinyl butyral (PVB), which fills the intermediate space and provides a seal at the circumference of each module for coupling with the sealant material 311 and 313 .
  • EVA ethylene vinyl acetate
  • PVB polyvinyl butyral
  • the two or more solar devices 301 and 303 are inter-coupled electrically while being laminated together to the cover plate 100 to form an integrated thin-film photovoltaic module.
  • the electric coupling between any two neighboring solar devices attached to the cover plate can be electrical in parallel or in series, allowing the integrated thin-film photovoltaic module to support higher electric current capacity or voltage power level.
  • these electric coupling is achieved by means of a common conductor 400 disposed along an edge of the integrated thin-film photovoltaic module and a plurality of ribbon conductor 402 to connect from the two or more solar devices 301 and 303 to the common conductor 400 .
  • one ribbon conductor 402 may couple to the upper-electrode of a solar device while another ribbon conductor 403 may couple to the lower-electrode of the same solar device.
  • one ribbon conductor may connect from the upper-electrode of a first solar device 301 to pass a hole through it including the substrate to couple with the lower-electrode of a second solar device 303 next to device 301 .
  • another ribbon conductor coupled to the upper-electrode of the first solar device 301 or the lower-electrode of the second device 303 may be linkable to an external electric contact for collecting the current from the entire integrated thin-film module. Additional detail description about the method and structure for tiling the two or more solar devices can be found throughout the specification and more particularly below.
  • FIG. 2-A is side view of a cover plate laminated to two solar devices according to an embodiment of the present invention.
  • the cover plate 100 includes a transparent and flat plate having a front surface 101 and a rear surface 103 .
  • the front surface 101 may be applied as a light-receiving side and the rear surface 103 is utilized for attaching two (or more) solar devices 301 .
  • the two solar devices 301 are encapsulated to the rear surface 103 by means of a transparent organic material 200 .
  • the transparent organic material 200 fills the intermediate space region between the rear surface 103 of the cover plate 100 and a top surface of the solar device 301 .
  • a circumferential border region of the solar device 301 has been protected by a polymeric material 320 , which is a sealant mainly for protecting the solar device against ingress of moisture through the boarder region.
  • the cover plate 100 has its width in a desired dimension large enough to fit total widths of two solar devices 301 plus some extra device-device spacing when the two solar devices are disposed side by side.
  • the width of a single solar device 301 may be as large as 65 cm for some industrial sized thin-film photovoltaic module. Therefore, the cover plate 100 for the integrated solar module may be twice that size or even bigger.
  • FIG. 2-B a bottom view of the cover plate according to the embodiment of the present invention is shown.
  • This is the bottom view of the cover plate 100 shown in FIG. 2-A .
  • the cover plate 100 has its partial area made as opaque. This is achieved by a coating material 305 on the cover plate within the as-mentioned area.
  • the coating can be painted, screen printed and heated, but can also e.g. be a polymeric tape.
  • a ceramic paste can be screen-printed and tempered.
  • the body of the cover plate 100 can be modified in the area so as to be opaque, for example by adding a pigment or by inclusion of an opaque layer or substance.
  • the coating is preferably non-conducting.
  • the as-mentioned opaque area is located properly on the rear surface 103 and in a framed region located just above a border area of a solar device 301 when the cover plate 101 is laminated with the solar device 301 .
  • the border area of the solar device does not have photovoltaic active material
  • the opaque area on the cover plate includes substantially all area that can receive light and under which area no photovoltaic layer is present.
  • the photovoltaic layer edges of the solar device will be easily subjected to heating by sun light irradiation different from area having photovoltaic layer, which leads to thermal stress and eventually macroscopic cracking to the solar device. Additionally, the UV degradation of the polymeric material along the solar device edge will be a problem.
  • adding the opaque coating 305 characterized by color suitably dark, preferably black, and capable of substantially blocking UV radiation becomes a solution for preventing from the UV degradation and undesired thermal stress.
  • the details of adding proper opaque area to the cover plate when packaging thin-film photovoltaic module can be found in a U.S. patent application Ser. No. 12/158,239 titled “PHOTOVOLTAIC DEVICE AND METHOD FOR ENCAPSULATING” filed by Hermann Calwer etc. on Dec. 20, 2006, incorporated by reference.
  • the opaque coating 305 is applied with two such framed regions side by side, as shown in FIG. 2-B .
  • the non-opaque region shown is projected just above the thin-film photovoltaic cells of the laminated solar devices 301 .
  • the length dimension L of the cover plate 100 is properly selected to fit the length of each of the two or more solar devices 301 , which are disposed side by side when encapsulated with the cover plate 100 .
  • the length L can be as large as 165 cm and greater.
  • FIG. 3 is a schematic cross-section view of a thin-film solar device according to an embodiment of the present invention.
  • the thin-film solar device 2000 is supported on a substrate 2010 which is typically glass of about 1 to 3 millimeters thickness.
  • a back contact or lower electrode comprises a metal layer 2031 deposited upon substrate 2010 .
  • Layer 2031 in the preferred embodiment, typically comprises molybdenum which has been deposited by sputtering to a thickness of about 0.2 to 2 microns.
  • a p-type chalkopyrite semiconductor layer 2020 is arranged, having a thickness of about 0.2 to 2 microns.
  • a particular class of thin-film solar devices has an absorber layer formed of a group I-III-VI semiconductor, also referred to as a chalkopyrite semiconductor.
  • a group I-III-VI semiconductor also referred to as a chalkopyrite semiconductor.
  • Such a semiconductor is generally of the copper indium diselenide (“CIS”) type, wherein this expression is to be understood such that indium can be partly or fully replaced by gallium and/or aluminium, and selenium can be partly or fully replaced by sulphur.
  • the CIS type layer can further comprise a low concentration, trace, or a doping concentration of one or more further elements or compounds, in particular alkali such as sodium, potassium, rubidium, cesium, and/or francium, or alkali compounds.
  • the concentration of such further constituents is typically 5 wt % or less, preferably 3 wt % or less.
  • the CIS layer 2020 can be formed by sputter deposition of a sequence of layers comprising the metal constituents of the CIS layer, followed by a programmed thermal annealing processing with an environment containing Selenium vapor species and/or additionally sulfide species. A preferred process has been described in U.S. Patent Application No. 61/178,459 titled “Method and System for Selenization in Fabricating CIGS/CIS Solar Cells” filed on May 14, 2009, commonly assigned to Stion Corporation, incorporated for all purpose by reference.
  • the buffer layer can include CdS.
  • a Cd-free inorganic layer such as Zn(O,S) possibly also including hydroxide may be used, but the buffer layer can also be omitted.
  • a layer of intrinsic ZnO i.e. a ZnO layer that having a bulk resistivity higher than 1 Ohm ⁇ cm, preferably higher than 100 Ohm ⁇ cm, such as between 1 and 10 ⁇ 10 3 Ohm ⁇ cm.
  • the layer is between 10 nm and 150 nm thick.
  • the solar device 2000 further comprises an upper-electrode 2032 overlying the buffer layer 2025 .
  • the upper electrode layer is n-type ZnO layer appropriately doped to provide relatively low resistivity, for example, better than about 2.0 ⁇ 10 ⁇ 3 Ohm ⁇ cm, and preferably better than 1.0 ⁇ 10 ⁇ 3 Ohm ⁇ cm.
  • the thickness of the layer 2032 ranges from 0.5 to 2 microns.
  • the thin-film solar device 2000 described above is a same class of the two or more solar devices 301 that are laminated to the cover plate for forming an integrated photovoltaic module.
  • FIG. 4 is a schematic top view of a thin-film solar device with stripe shaped cells according to the embodiment of the present invention.
  • manufacturing the CIS based thin-film solar device includes a cell patterning process for creating a plurality of stripe shaped cells divided by line patterns in one or more layers. For example, a first plurality of patterns in the lower electrode layer 2031 and a second plurality of patterns in the CIS absorber layer 2020 and partially in the lower-electrode layer 2031 are formed using either laser or mechanical scribe device.
  • the first plurality of patterns and the second plurality of patterns are utilized for forming electric links from cell to cell and to the electric contact for the thin-film solar device.
  • a portion of the thin-film solar device 2000 includes a plurality of photovoltaic cells 2001 each having a width w (spacing between two neighboring line patterns) extending from one end of the substrate to another end (there may be no photovoltaic layers on 1-2 cm border regions of the substrate).
  • the width w of each of these cells 2001 is about 6 mm.
  • the length of these cells 2001 can ranges from 20 cm to 165 cm or greater depending on the physical dimension of the substrate overlying which the solar device is formed. Of course, there can be many variations, alternatives, and modifications.
  • FIGS. 5-A and 5 -B illustrate a cross-section view and a top view of laminated solar devices electrically coupled by one or more ribbon conductors between the cover plate and the solar devices according to an embodiment of the present invention.
  • an integrated photovoltaic module includes at least a solar device 510 laminated to a cover plate 500 by means of a transparent polymeric material 520 .
  • a common conductor 560 is disposed and a pair of ribbon conductors 565 is used for making electric coupling between the solar device 510 and the common conductor 560 .
  • the ribbon conductor 565 is buried within the polymeric material 520 .
  • each ribbon conductor 565 is seen to directly connect each solar device 510 to the common conductor 560 .
  • a specific ribbon conductor 565 couples to an upper-electrode or lower-electrode of the solar device 510 .
  • the common conductor is arranged to collect the current from the entire integrated module and is connected or connectable to an electrical contact outside the module.
  • FIGS. 6-A and 6 -B are a cross-section view and a top view of laminated solar devices including ribbon electric conductors according to another embodiment of the present invention.
  • an integrated photovoltaic module includes a thin-film solar device 610 and at least another thin-film solar device 611 disposed next to the solar device 610 both laminated to a rear surface of a cover plate 600 by means of a transparent polymeric material 620 .
  • the solar device 610 or 611 includes a thin-film based photovoltaic absorber layer overlying a metal electrode layer formed on a substrate.
  • an upper electrode layer (not shown explicitly), which is a transparent oxide material coupled directly to the transparent polymeric material 620 in this encapsulated structure.
  • the solar device 610 including its supporting substrate includes one or more through-holes 660 prepared before the lamination.
  • a ribbon conductor 665 which coupled to the upper electrode layer of the solar device 611 , can pass through the through-hole 660 to the back side of the substrate of the solar device 610 to be connectable with an electric contact mounted there or outside the entire integrated module.
  • the ribbon conductor 665 completes the inter-device electric coupling between the two thin-film solar device 610 and 611 so that the integrated module can provide doubled power capacity.
  • each thin-film solar device includes other ribbon conductors 663 respectively attached to either upper or lower electrode layer of either the solar device 610 or solar device 611 to complete the electric coupling either in series or in parallel.
  • the present invention provides numerous benefits over conventional techniques.
  • the method and structure provided in the present invention are compatible but scaled to very large industrial panels from conventional modules, which allow cost effective implementation of new generation integrated thin-film photovoltaic modules into large scale commercial applications.
  • the integrated solar module laminates two or more thin-film photovoltaic devices to a common cover plate. This effective enhances the power capacity of the solar module by extending either circuit current delivered from the entire module or the voltage level for coupling with outside electric contacts.
  • each of the two or more thin-film solar devices can have a dimension of 65 cm times 165 cm and be disposed side by side onto a hardened glass plate having a dimension of 165 cm or greater in one direction.
  • the encapsulation of the integrated module is compatible with stand alone module, so that additional cost saving in packaging process and material can be achieved by implementation of current invention. Additionally, scale up the stand alone thin-film solar device and their integration provide high quality with reduced cost but enhanced overall efficiency over 11%.

Abstract

A method for integrating photovoltaic module includes providing a cover plate having a first surface and a second surface opposed to the first surface and supplying two or more solar devices respectively formed on substrates. Each of the two or more photovoltaic devices includes a plurality of photovoltaic cells electrically coupled to each other and each cell is characterized by a thin-film photovoltaic layer sandwiched between a first electrode material and a second electrode material. The first electrode material overlies the substrate and the second electrode material overlies the thin-film photovoltaic layer. The method further includes disposing the two or more solar devices side by side to laminate with the cover plate by means of a first organic material filled between the second electrode material and the second surface. Each of the two or more solar devices has a peripheral edge region being sealed by a second organic material. The method further includes electrically coupling the two or more solar devices to each other.

Description

    CROSS-REFERENCES TO RELATED APPLICATIONS
  • This application is a divisional of U.S. patent application Ser. No. 13/006,743, filed Jan. 14, 2011, entitled “Method and Structure for Tiling Industrial Thin-Film Solar Devices” by inventor Robert D. Wieting, which claims priority to U.S. Provisional Patent Application No. 61/297,661, filed Jan. 22, 2010, entitled “Method and Structure for Tiling Industrial Thin-Film Solar Devices” by inventor Robert D. Wieting, commonly assigned and incorporated by reference herein for all purposes.
  • BACKGROUND OF THE INVENTION
  • The present invention relates generally to photovoltaic techniques. More particularly, the present invention provides a method and structure for tiling solar devices to a transparent cover plate. Merely by example, embodiments of the present invention are applied to laminate two or more industrial-sized solar panels based on thin-film photovoltaic materials including copper indium diselenide species (CIS), copper indium gallium diselenide species (CIGS), and/or others.
  • From the beginning of time, mankind has been challenged to find way of harnessing energy. Energy comes in the forms such as petrochemical, hydroelectric, nuclear, wind, biomass, solar, and more primitive forms such as wood and coal. Over the past century, modern civilization has relied upon petrochemical energy as an important energy source. Petrochemical energy includes gas and oil. Gas includes lighter forms such as butane and propane, commonly used to heat homes and serve as fuel for cooking Gas also includes gasoline, diesel, and jet fuel, commonly used for transportation purposes. Heavier forms of petrochemicals can also be used to heat homes in some places. Unfortunately, the supply of petrochemical fuel is limited and essentially fixed based upon the amount available on the planet Earth. Additionally, as more people use petroleum products in growing amounts, it is rapidly becoming a scarce resource, which will eventually become depleted over time.
  • More recently, environmentally clean and renewable sources of energy have been desired. An example of a clean source of energy is hydroelectric power. Hydroelectric power is derived from electric generators driven by the flow of water produced by dams such as the Hoover Dam in Nevada. The electric power generated is used to power a large portion of the city of Los Angeles in California. Clean and renewable sources of energy also include wind, waves, biomass, and the like. That is, windmills convert wind energy into more useful forms of energy such as electricity. Still other types of clean energy include solar energy. Specific details of solar energy can be found throughout the present background and more particularly below.
  • Solar energy technology generally converts electromagnetic radiation from the sun to other useful forms of energy. These other forms of energy include thermal energy and electrical power. For electrical power applications, solar cells are often used. Although solar energy is environmentally clean and has been successful to a point, many limitations remain to be resolved before it becomes widely used throughout the world. As an example, one type of solar cell uses crystalline materials, which are derived from semiconductor material ingots. These crystalline materials can be used to fabricate optoelectronic devices that include photovoltaic and photodiode devices that convert electromagnetic radiation into electrical power. However, crystalline materials are often costly and difficult to make on a large scale. Other types of solar cells use “thin film” technology to form a thin film of photosensitive material to be used to convert electromagnetic radiation into electrical power. Similar limitations exist with the use of thin film technology in making solar cells. That is, efficiencies are often poor. Additionally, film reliability is often poor and cannot be used for extensive periods of time in conventional environmental applications. Often, thin films are difficult to mechanically integrate with each other. These and other limitations of these conventional technologies can be found throughout the present specification and more particularly below.
  • BRIEF SUMMARY OF THE INVENTION
  • The present invention relates generally to photovoltaic techniques. More particularly, the present invention provides a method and structure for tiling two or more solar devices to a transparent cover plate. Merely by example, the present invention is applied to laminate two or more thin-film solar devices having sizes of about 165 cm or greater.
  • According to an embodiment, the present invention provides a method for integrating photovoltaic module. The method includes providing a cover plate having a first surface and a second surface opposed to the first surface. The method further includes supplying two or more solar devices respectively formed on substrates. Each of the two or more photovoltaic devices includes a plurality of photovoltaic cells electrically coupled to each other. Each cell is characterized by a thin-film photovoltaic layer sandwiched between a first electrode material and a second electrode material. The first electrode material overlies the substrate and the second electrode material overlies the thin-film photovoltaic layer. Additionally, the method includes disposing the two or more solar devices side by side to laminate with the cover plate by means of a first organic material filled between the second electrode material and the second surface. Each of the two or more solar devices has a peripheral edge region being sealed by a second organic material. Furthermore, the method includes electrically coupling the two or more solar devices to each other.
  • In an alternative embodiment, the present invention provides a structure for tiling thin-film solar devices. The structure includes a cover plate with at least a dimension of about 165 cm and greater in one direction including a front surface and a rear surface opposed to the front surface. Additionally, the structure includes two or more solar devices laminated side by side to the rear surface and electrically coupled to each other by a ribbon connector. Each of the two or more solar devices includes a plurality of thin-film photovoltaic cells overlying a substrate. Each of the thin-film photovoltaic cells has a stripe shaped pattern in parallel to each other.
  • It is to be appreciated that the present invention provides numerous benefits over conventional techniques. Among other things, the method and structure provided in the present invention are compatible but scaled to very large industrial panels from conventional modules, which allow cost effective implementation of new generation integrated thin-film photovoltaic modules into large scale commercial applications. The integrated solar module laminates two or more thin-film photovoltaic devices to a common cover plate. This effective enhances the power capacity of the solar module by extending either circuit current delivered from the entire module or the voltage level for coupling with outside electric contacts. Physically, each of the two or more thin-film solar devices can have a dimension of 65 cm times 165 cm and be disposed side by side onto a hardened glass plate having a dimension of 165 cm or greater in one direction. The encapsulation of the integrated module is compatible with stand alone module, so that additional cost saving in packaging process and material can be achieved by implementation of current invention. Additionally, scale up the stand alone thin-film solar device and their integration provide high quality with reduced cost but enhanced overall efficiency over 11%. There are other benefits as well.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a perspective view of a method and structure for tiling solar devices according to an embodiment of the present invention.
  • FIG. 2 illustrates a side view (A) and a bottom view (B) of a cover plate laminated to two solar devices according to an embodiment of the present invention.
  • FIG. 3 is a schematic cross-section view of a thin-film solar device according to an embodiment of the present invention.
  • FIG. 4 is a schematic top view of a thin-film solar device with stripe shaped cell patterns according to the embodiment of the present invention.
  • FIG. 5 illustrates a cross-section view (A) and a top view (B) of laminated solar devices including ribbon electric conductors according to an embodiment of the present invention.
  • FIG. 6 illustrates a cross-section view (A) and a top view (B) of laminated solar devices including ribbon electric conductors according to another embodiment of the present invention.
  • DETAILED DESCRIPTION OF THE INVENTION
  • The present invention relates generally to photovoltaic techniques. More particularly, the present invention provides a method and structure for tiling two or more solar devices on a transparent cover plate. Merely by example, the present invention is applied to laminate two or more thin-film solar devices having about 165 cm or greater in form factor to a glass cover plate.
  • FIG. 1 is a perspective view of a method and structure for tiling solar devices according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. As shown, a structure 1000 for tiling solar devices on to a cover plate is schematically broken down to a group of basic elements. In an embodiment, the structure 1000 includes a cover plate 100, two or more solar devices 301 and 303 respectively formed on a substrate 311 and 313, a sealant material 320, a fill material 200, a common conductor 400, and a plurality of ribbon conductor 402. The cover plate is typically flat with a front surface on light-receiving side and a rear surface for attaching one or more solar devices. The cover plate 100 has a thickness in the range of 0.5-10 mm, preferably 1-5 mm, and can be of any material that has sufficient transparency above the photovoltaic layer. Suitably the cover plate is a cover glass, preferably hardened glass. In a specific embodiment, the cover plate 100 can be a polymeric material bearing an optical transparency characteristic. In another specific embodiment, the cover plate 100 has a large physical dimension capable of allowing two or more industrial sized solar devices together to be laminated thereon. For example, the dimension of the cover plate 100 may be at least 165 cm or greater in one direction. Of course, there can be other variations, alternatives, and modifications. For example, the cover plate 100 can have various kinds of shapes including a rectangular shape.
  • Referring to FIG. 1, the two or more solar devices 301 and 303 are attached to the rear surface of the cover plate 100. Normally, the two or more solar devices are not covering all area of the cover plate 100. In an embodiment, the two or more solar devices 301 and 303 are disposed side by side having some additional gaps in between. Each of the solar devices 301 and 303 is substantially a kind of thin-film solar devices having a rectangular shape with its length substantially fitted to the cover plate 100 in one direction and total width of all solar devices plus the addition gaps substantially fitted with the cover plate 100 in another direction. In a specific embodiment, the thin-film solar device 301 or 303 is made from a chalcopyrite semiconductor thin film photovoltaic active layer sandwiched by two electrode layers, an upper electrode and a lower electrode. In an implementation, the chalcopyrite semiconductor thin film photovoltaic active layer includes copper indium diselenide absorber overlapped by an optical transparent cadmium sulfide window layer. The upper-electrode overlying the window layer is also optical transparent allowing photons to be absorbed by the photovoltaic layer below and converted into electrons.
  • As shown in FIG. 1, each cell has a strip shape in parallel to all other cells. For example, the strip shape of each cell is about 6 millimeters in width and has a length up to the substrate except some boarder region at two ends. Within the boarder region of the thin-film solar device 301 or 303, a polymeric sealant material 320, such as a polymer tape, is applied to protect the solar device from ingress of moisture. Corresponding to the boarder region of each solar device 301 on the cover plate 100 an opaque frame region 105 is formed on the rear surface for block light and in particular UV irradiation to the polymer material of the photovoltaic cells. The rest portion, or the major area, of the cover plate 100 is substantially transparent for full spectrum of the sun light overlying the plurality of thin-film photovoltaic cells in stripe shape. Finally, each of the two or more solar devices is laminated its upper-electrode surface to the rear surface of the cover plate by means of the fill material 200. In a specific embodiment, the fill material is an organic polymer material bearing both characteristics of mechanical bonding and optical transparency. For example, the fill material 200 is a transparent polymer selected from ethylene vinyl acetate (EVA) and polyvinyl butyral (PVB), which fills the intermediate space and provides a seal at the circumference of each module for coupling with the sealant material 311 and 313. Of course, there can be many alternatives, variations, and modifications.
  • Additionally, the two or more solar devices 301 and 303 are inter-coupled electrically while being laminated together to the cover plate 100 to form an integrated thin-film photovoltaic module. The electric coupling between any two neighboring solar devices attached to the cover plate can be electrical in parallel or in series, allowing the integrated thin-film photovoltaic module to support higher electric current capacity or voltage power level. In an embodiment, these electric coupling is achieved by means of a common conductor 400 disposed along an edge of the integrated thin-film photovoltaic module and a plurality of ribbon conductor 402 to connect from the two or more solar devices 301 and 303 to the common conductor 400. In particular, one ribbon conductor 402 may couple to the upper-electrode of a solar device while another ribbon conductor 403 may couple to the lower-electrode of the same solar device. In another embodiment, one ribbon conductor may connect from the upper-electrode of a first solar device 301 to pass a hole through it including the substrate to couple with the lower-electrode of a second solar device 303 next to device 301. Respectively, another ribbon conductor coupled to the upper-electrode of the first solar device 301 or the lower-electrode of the second device 303 may be linkable to an external electric contact for collecting the current from the entire integrated thin-film module. Additional detail description about the method and structure for tiling the two or more solar devices can be found throughout the specification and more particularly below.
  • FIG. 2-A is side view of a cover plate laminated to two solar devices according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. As shown, the cover plate 100 includes a transparent and flat plate having a front surface 101 and a rear surface 103. The front surface 101 may be applied as a light-receiving side and the rear surface 103 is utilized for attaching two (or more) solar devices 301. In an embodiment, the two solar devices 301 are encapsulated to the rear surface 103 by means of a transparent organic material 200. The transparent organic material 200 fills the intermediate space region between the rear surface 103 of the cover plate 100 and a top surface of the solar device 301. In a specific embodiment, a circumferential border region of the solar device 301, including the applied encapsulating transparent organic material 200, has been protected by a polymeric material 320, which is a sealant mainly for protecting the solar device against ingress of moisture through the boarder region. As shown, the cover plate 100 has its width in a desired dimension large enough to fit total widths of two solar devices 301 plus some extra device-device spacing when the two solar devices are disposed side by side. In an implementation, the width of a single solar device 301 may be as large as 65 cm for some industrial sized thin-film photovoltaic module. Therefore, the cover plate 100 for the integrated solar module may be twice that size or even bigger.
  • Referring to FIG. 2-B, a bottom view of the cover plate according to the embodiment of the present invention is shown. This is the bottom view of the cover plate 100 shown in FIG. 2-A. In accordance with the invention the cover plate 100 has its partial area made as opaque. This is achieved by a coating material 305 on the cover plate within the as-mentioned area. The coating can be painted, screen printed and heated, but can also e.g. be a polymeric tape. For example, a ceramic paste can be screen-printed and tempered. Instead of coating, also the body of the cover plate 100 can be modified in the area so as to be opaque, for example by adding a pigment or by inclusion of an opaque layer or substance. The coating is preferably non-conducting. In an embodiment, the as-mentioned opaque area is located properly on the rear surface 103 and in a framed region located just above a border area of a solar device 301 when the cover plate 101 is laminated with the solar device 301. Because the border area of the solar device does not have photovoltaic active material, the opaque area on the cover plate includes substantially all area that can receive light and under which area no photovoltaic layer is present. However, if no such opaque area is used, the photovoltaic layer edges of the solar device will be easily subjected to heating by sun light irradiation different from area having photovoltaic layer, which leads to thermal stress and eventually macroscopic cracking to the solar device. Additionally, the UV degradation of the polymeric material along the solar device edge will be a problem. Therefore, adding the opaque coating 305 characterized by color suitably dark, preferably black, and capable of substantially blocking UV radiation becomes a solution for preventing from the UV degradation and undesired thermal stress. The details of adding proper opaque area to the cover plate when packaging thin-film photovoltaic module can be found in a U.S. patent application Ser. No. 12/158,239 titled “PHOTOVOLTAIC DEVICE AND METHOD FOR ENCAPSULATING” filed by Hermann Calwer etc. on Dec. 20, 2006, incorporated by reference. In an specific embodiment, for a cover plate 100 designed to fit two solar devices side by side, the opaque coating 305 is applied with two such framed regions side by side, as shown in FIG. 2-B. Additionally, the non-opaque region shown is projected just above the thin-film photovoltaic cells of the laminated solar devices 301. The length dimension L of the cover plate 100 is properly selected to fit the length of each of the two or more solar devices 301, which are disposed side by side when encapsulated with the cover plate 100. In an implementation for integrating large scale industrial thin-film solar panel, the length L can be as large as 165 cm and greater.
  • FIG. 3 is a schematic cross-section view of a thin-film solar device according to an embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. In an embodiment, the thin-film solar device 2000 is supported on a substrate 2010 which is typically glass of about 1 to 3 millimeters thickness. A back contact or lower electrode comprises a metal layer 2031 deposited upon substrate 2010. Layer 2031, in the preferred embodiment, typically comprises molybdenum which has been deposited by sputtering to a thickness of about 0.2 to 2 microns. On top of the lower electrode 2031 a p-type chalkopyrite semiconductor layer 2020 is arranged, having a thickness of about 0.2 to 2 microns.
  • In a specific embodiment, a particular class of thin-film solar devices has an absorber layer formed of a group I-III-VI semiconductor, also referred to as a chalkopyrite semiconductor. Such a semiconductor is generally of the copper indium diselenide (“CIS”) type, wherein this expression is to be understood such that indium can be partly or fully replaced by gallium and/or aluminium, and selenium can be partly or fully replaced by sulphur. The CIS type layer can further comprise a low concentration, trace, or a doping concentration of one or more further elements or compounds, in particular alkali such as sodium, potassium, rubidium, cesium, and/or francium, or alkali compounds. The concentration of such further constituents is typically 5 wt % or less, preferably 3 wt % or less. The CIS layer 2020 can be formed by sputter deposition of a sequence of layers comprising the metal constituents of the CIS layer, followed by a programmed thermal annealing processing with an environment containing Selenium vapor species and/or additionally sulfide species. A preferred process has been described in U.S. Patent Application No. 61/178,459 titled “Method and System for Selenization in Fabricating CIGS/CIS Solar Cells” filed on May 14, 2009, commonly assigned to Stion Corporation, incorporated for all purpose by reference.
  • On top of the CIS type layer commonly a buffer layer or window 2025 is arranged. The buffer layer can include CdS. A Cd-free inorganic layer such as Zn(O,S) possibly also including hydroxide may be used, but the buffer layer can also be omitted. It is also possible to arrange a layer of intrinsic ZnO, i.e. a ZnO layer that having a bulk resistivity higher than 1 Ohm·cm, preferably higher than 100 Ohm·cm, such as between 1 and 10×103 Ohm·cm. Preferably the layer is between 10 nm and 150 nm thick. The solar device 2000 further comprises an upper-electrode 2032 overlying the buffer layer 2025. In an example, the upper electrode layer is n-type ZnO layer appropriately doped to provide relatively low resistivity, for example, better than about 2.0×10−3 Ohm·cm, and preferably better than 1.0×10−3 Ohm·cm. The thickness of the layer 2032 ranges from 0.5 to 2 microns. In an embodiment, the thin-film solar device 2000 described above is a same class of the two or more solar devices 301 that are laminated to the cover plate for forming an integrated photovoltaic module.
  • FIG. 4 is a schematic top view of a thin-film solar device with stripe shaped cells according to the embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. In a specific embodiment, manufacturing the CIS based thin-film solar device includes a cell patterning process for creating a plurality of stripe shaped cells divided by line patterns in one or more layers. For example, a first plurality of patterns in the lower electrode layer 2031 and a second plurality of patterns in the CIS absorber layer 2020 and partially in the lower-electrode layer 2031 are formed using either laser or mechanical scribe device. The first plurality of patterns and the second plurality of patterns (and any additional series of patterns on buffer layer or upper electrode layer) are utilized for forming electric links from cell to cell and to the electric contact for the thin-film solar device. As shown in FIG. 4, a portion of the thin-film solar device 2000 includes a plurality of photovoltaic cells 2001 each having a width w (spacing between two neighboring line patterns) extending from one end of the substrate to another end (there may be no photovoltaic layers on 1-2 cm border regions of the substrate). In a specific embodiment, the width w of each of these cells 2001 is about 6 mm. The length of these cells 2001 can ranges from 20 cm to 165 cm or greater depending on the physical dimension of the substrate overlying which the solar device is formed. Of course, there can be many variations, alternatives, and modifications.
  • FIGS. 5-A and 5-B illustrate a cross-section view and a top view of laminated solar devices electrically coupled by one or more ribbon conductors between the cover plate and the solar devices according to an embodiment of the present invention. As shown in FIG. 5-A, an integrated photovoltaic module includes at least a solar device 510 laminated to a cover plate 500 by means of a transparent polymeric material 520. In an embodiment, near one side of peripheral border region of the integrated module a common conductor 560 is disposed and a pair of ribbon conductors 565 is used for making electric coupling between the solar device 510 and the common conductor 560. The ribbon conductor 565 is buried within the polymeric material 520. In FIG. 5B, a top view of two solar devices disposed side by side for laminating to the cover plate is shown. From this angle, each ribbon conductor 565 is seen to directly connect each solar device 510 to the common conductor 560. A specific ribbon conductor 565 couples to an upper-electrode or lower-electrode of the solar device 510. The common conductor is arranged to collect the current from the entire integrated module and is connected or connectable to an electrical contact outside the module.
  • FIGS. 6-A and 6-B are a cross-section view and a top view of laminated solar devices including ribbon electric conductors according to another embodiment of the present invention. This diagram is merely an example, which should not limit the scope of the claims herein. As shown, in another embodiment of the invention an integrated photovoltaic module includes a thin-film solar device 610 and at least another thin-film solar device 611 disposed next to the solar device 610 both laminated to a rear surface of a cover plate 600 by means of a transparent polymeric material 620. The solar device 610 or 611 includes a thin-film based photovoltaic absorber layer overlying a metal electrode layer formed on a substrate. For each of the two thin-film solar devices, an upper electrode layer (not shown explicitly), which is a transparent oxide material coupled directly to the transparent polymeric material 620 in this encapsulated structure. In a specific embodiment, the solar device 610 including its supporting substrate includes one or more through-holes 660 prepared before the lamination. A ribbon conductor 665, which coupled to the upper electrode layer of the solar device 611, can pass through the through-hole 660 to the back side of the substrate of the solar device 610 to be connectable with an electric contact mounted there or outside the entire integrated module. The ribbon conductor 665 completes the inter-device electric coupling between the two thin-film solar device 610 and 611 so that the integrated module can provide doubled power capacity. Additionally, each thin-film solar device includes other ribbon conductors 663 respectively attached to either upper or lower electrode layer of either the solar device 610 or solar device 611 to complete the electric coupling either in series or in parallel.
  • It is to be appreciated that the present invention provides numerous benefits over conventional techniques. Among other things, the method and structure provided in the present invention are compatible but scaled to very large industrial panels from conventional modules, which allow cost effective implementation of new generation integrated thin-film photovoltaic modules into large scale commercial applications. The integrated solar module laminates two or more thin-film photovoltaic devices to a common cover plate. This effective enhances the power capacity of the solar module by extending either circuit current delivered from the entire module or the voltage level for coupling with outside electric contacts. Physically, each of the two or more thin-film solar devices can have a dimension of 65 cm times 165 cm and be disposed side by side onto a hardened glass plate having a dimension of 165 cm or greater in one direction. The encapsulation of the integrated module is compatible with stand alone module, so that additional cost saving in packaging process and material can be achieved by implementation of current invention. Additionally, scale up the stand alone thin-film solar device and their integration provide high quality with reduced cost but enhanced overall efficiency over 11%.
  • It is understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggest to persons skilled in the art and are to be included within the spirit and purview of this application and scope of the appended claims.

Claims (11)

What is claimed is:
1. A structure for tiling thin-film solar devices comprising:
a cover plate with at least a dimension of about 165 cm and greater in one direction including a front surface and a rear surface opposed to the front surface; and
at least two solar devices laminated side by side to the rear surface and electrically coupled to each other by a ribbon connector, each of the solar devices comprising a plurality of thin-film photovoltaic cells overlying a substrate, each of the thin-film photovoltaic cells having a stripe shaped pattern in parallel to each other.
2. The structure of claim 1 wherein the cover plate comprises a hardened glass having a transparent region over main areas of the solar devices and an opaque region over the peripheral edge regions of the solar devices.
3. The structure of claim 1 wherein the cover plate comprises a transparent polymer.
4. The structure of claim 1 the solar devices are attached to the rear surface via a transparent polymer selected from ethylene vinyl acetate and polyvinyl butyral.
5. The structure of claim 1 wherein each of the solar devices comprises a peripheral edge region sealed by a polymeric sealant material selected from butyl rubber, urethane and polyurethane materials, polyisobutylene materials, epoxide materials, polysulfamide materials, and cyanoacrylates.
6. The structure of claim 1 wherein each of the solar devices comprises a dimension of about 65 cm by 165 cm including the plurality of thin-film photovoltaic cells each having a size of about 6 mm by about 160 cm.
7. The structure of claim 1 wherein the plurality of thin-film photovoltaic cells having a stripe shaped pattern comprise a chalcopyrite compound semiconductor materials selected from copper indium diselenide, copper indium disulfide, copper indium gallium diselenide, and copper indium disulfide.
8. The structure of claim 1 wherein the ribbon conductor connects the solar devices electrically in series.
9. The structure of claim 1 wherein the ribbon conductor connects the solar devices electrically in parallel.
10. The structure of claim 1 wherein the ribbon conductor is disposed between the rear surface and the solar devices to connect an electric contact disposed near an edge of the cover plate.
11. The structure of claim 1 wherein the ribbon conductor respectively passes through the solar devices to connect an electric contact disposed rear side of the substrates.
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Cited By (2)

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Publication number Priority date Publication date Assignee Title
US20190035953A1 (en) * 2016-02-11 2019-01-31 Flisom Ag Fabricating thin-film optoelectronic devices with added rubidium and/or cesium
US10651324B2 (en) 2016-02-11 2020-05-12 Flisom Ag Self-assembly patterning for fabricating thin-film devices

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9105776B2 (en) 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
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EP2925940B1 (en) * 2012-12-03 2017-06-28 Kingspan Holdings (IRL) Limited A composite insulating panel
CN104766897B (en) * 2014-01-08 2021-07-02 明尼苏达矿业制造特殊材料(上海)有限公司 Solar cell module
TWI677105B (en) 2014-05-23 2019-11-11 瑞士商弗里松股份有限公司 Method of fabricating thin-film optoelectronic device and thin-film optoelectronic device obtainable by said method
TWI661991B (en) 2014-09-18 2019-06-11 瑞士商弗里松股份有限公司 Self-assembly patterning for fabricating thin-film devices
CN109904264A (en) * 2017-11-29 2019-06-18 熊猫电站控股有限公司 The photovoltaic plant of novel photovoltaic module and presentation pattern with particular color
CN110649113A (en) * 2018-06-08 2020-01-03 北京汉能光伏投资有限公司 Thin-film solar cell module and manufacturing method of portable power generation board
CN111063754A (en) * 2018-10-16 2020-04-24 北京汉能光伏投资有限公司 Method of making a non-standard battery assembly

Family Cites Families (280)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3520732A (en) 1965-10-22 1970-07-14 Matsushita Electric Ind Co Ltd Photovoltaic cell and process of preparation of same
US3828722A (en) 1970-05-01 1974-08-13 Cogar Corp Apparatus for producing ion-free insulating layers
US3975211A (en) 1975-03-28 1976-08-17 Westinghouse Electric Corporation Solar cells and method for making same
US4062038A (en) 1976-01-28 1977-12-06 International Business Machines Corporation Radiation responsive device
EP0002109B1 (en) 1977-11-15 1981-12-02 Imperial Chemical Industries Plc A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films
US4213781A (en) 1978-11-20 1980-07-22 Westinghouse Electric Corp. Deposition of solid semiconductor compositions and novel semiconductor materials
JPS55127074A (en) 1979-03-26 1980-10-01 Canon Inc Photoelectric transfer element with high molecular film as substrate
US4239553A (en) 1979-05-29 1980-12-16 University Of Delaware Thin film photovoltaic cells having increased durability and operating life and method for making same
US4332974A (en) 1979-06-28 1982-06-01 Chevron Research Company Multilayer photovoltaic cell
US4263336A (en) 1979-11-23 1981-04-21 Motorola, Inc. Reduced pressure induction heated reactor and method
EP0191503A3 (en) 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
US5217564A (en) 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US4287382A (en) * 1980-05-09 1981-09-01 Exxon Research & Engineering Co. Solar cell assembly and fabrication of solar cell panels utilizing same
US4335266A (en) 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4441113A (en) 1981-02-13 1984-04-03 Energy Conversion Devices, Inc. P-Type semiconductor material having a wide band gap
US4465575A (en) 1981-09-21 1984-08-14 Atlantic Richfield Company Method for forming photovoltaic cells employing multinary semiconductor films
DE3314197A1 (en) 1982-04-28 1983-11-03 Energy Conversion Devices, Inc., 48084 Troy, Mich. P-CONDUCTING AMORPHOUS SILICON ALLOY WITH A LARGE BAND GAP AND MANUFACTURING PROCESS THEREFOR
US4442310A (en) 1982-07-15 1984-04-10 Rca Corporation Photodetector having enhanced back reflection
US4518855A (en) 1982-09-30 1985-05-21 Spring-Mornne, Inc. Method and apparatus for statically aligning shafts and monitoring shaft alignment
US4461922A (en) 1983-02-14 1984-07-24 Atlantic Richfield Company Solar cell module
US4471155A (en) 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
US4502225A (en) 1983-05-06 1985-03-05 Rca Corporation Mechanical scriber for semiconductor devices
US4724011A (en) 1983-05-16 1988-02-09 Atlantic Richfield Company Solar cell interconnection by discrete conductive regions
US4517403A (en) 1983-05-16 1985-05-14 Atlantic Richfield Company Series connected solar cells and method of formation
US4598306A (en) 1983-07-28 1986-07-01 Energy Conversion Devices, Inc. Barrier layer for photovoltaic devices
US4499658A (en) 1983-09-06 1985-02-19 Atlantic Richfield Company Solar cell laminates
US4589194A (en) 1983-12-29 1986-05-20 Atlantic Richfield Company Ultrasonic scribing of thin film solar cells
US4542255A (en) 1984-01-03 1985-09-17 Atlantic Richfield Company Gridded thin film solar cell
US4581108A (en) 1984-01-06 1986-04-08 Atlantic Richfield Company Process of forming a compound semiconductive material
US4661370A (en) 1984-02-08 1987-04-28 Atlantic Richfield Company Electric discharge processing of thin films
US4507181A (en) 1984-02-17 1985-03-26 Energy Conversion Devices, Inc. Method of electro-coating a semiconductor device
US4611091A (en) 1984-12-06 1986-09-09 Atlantic Richfield Company CuInSe2 thin film solar cell with thin CdS and transparent window layer
US4599154A (en) 1985-03-15 1986-07-08 Atlantic Richfield Company Electrically enhanced liquid jet processing
US4612411A (en) 1985-06-04 1986-09-16 Atlantic Richfield Company Thin film solar cell with ZnO window layer
JPH0682625B2 (en) 1985-06-04 1994-10-19 シーメンス ソーラー インダストリーズ,エル.ピー. Deposition method of zinc oxide film
US4663495A (en) 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
US4638111A (en) 1985-06-04 1987-01-20 Atlantic Richfield Company Thin film solar cell module
US4623601A (en) 1985-06-04 1986-11-18 Atlantic Richfield Company Photoconductive device containing zinc oxide transparent conductive layer
US4798660A (en) 1985-07-16 1989-01-17 Atlantic Richfield Company Method for forming Cu In Se2 films
US4625070A (en) 1985-08-30 1986-11-25 Atlantic Richfield Company Laminated thin film solar module
JPS6273784A (en) 1985-09-27 1987-04-04 Sanyo Electric Co Ltd Photovoltaic device
US4865999A (en) 1987-07-08 1989-09-12 Glasstech Solar, Inc. Solar cell fabrication method
US4775425A (en) 1987-07-27 1988-10-04 Energy Conversion Devices, Inc. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same
US4816082A (en) 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
US4968354A (en) 1987-11-09 1990-11-06 Fuji Electric Co., Ltd. Thin film solar cell array
US5045409A (en) 1987-11-27 1991-09-03 Atlantic Richfield Company Process for making thin film solar cell
US4793283A (en) 1987-12-10 1988-12-27 Sarkozy Robert F Apparatus for chemical vapor deposition with clean effluent and improved product yield
US5008062A (en) 1988-01-20 1991-04-16 Siemens Solar Industries, L.P. Method of fabricating photovoltaic module
US5259883A (en) 1988-02-16 1993-11-09 Kabushiki Kaisha Toshiba Method of thermally processing semiconductor wafers and an apparatus therefor
US4915745A (en) 1988-09-22 1990-04-10 Atlantic Richfield Company Thin film solar cell and method of making
US5180686A (en) 1988-10-31 1993-01-19 Energy Conversion Devices, Inc. Method for continuously deposting a transparent oxide material by chemical pyrolysis
US4873118A (en) 1988-11-18 1989-10-10 Atlantic Richfield Company Oxygen glow treating of ZnO electrode for thin film silicon solar cell
US4996108A (en) 1989-01-17 1991-02-26 Simon Fraser University Sheets of transition metal dichalcogenides
US4950615A (en) 1989-02-06 1990-08-21 International Solar Electric Technology, Inc. Method and making group IIB metal - telluride films and solar cells
FR2646560B1 (en) 1989-04-27 1994-01-14 Solems Sa METHOD FOR IMPROVING THE SPECTRAL RESPONSE OF AN IMPROVED PHOTOCONDUCTOR STRUCTURE, SOLAR CELL AND PHOTORECEPTIVE STRUCTURE
US5028274A (en) 1989-06-07 1991-07-02 International Solar Electric Technology, Inc. Group I-III-VI2 semiconductor films for solar cell application
EP0421133B1 (en) 1989-09-06 1995-12-20 Sanyo Electric Co., Ltd. Manufacturing method of a flexible photovoltaic device
US5078803A (en) 1989-09-22 1992-01-07 Siemens Solar Industries L.P. Solar cells incorporating transparent electrodes comprising hazy zinc oxide
JPH03124067A (en) 1989-10-07 1991-05-27 Showa Shell Sekiyu Kk Photovoltaic device and its manufacture
US5011565A (en) 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Dotted contact solar cell and method of making same
US5154777A (en) 1990-02-26 1992-10-13 Mcdonnell Douglas Corporation Advanced survivable space solar power system
DK170189B1 (en) 1990-05-30 1995-06-06 Yakov Safir Process for the manufacture of semiconductor components, as well as solar cells made therefrom
EP0460287A1 (en) 1990-05-31 1991-12-11 Siemens Aktiengesellschaft Novel chalcopyrite solar cell
EP0468094B1 (en) 1990-07-24 1995-10-11 Siemens Aktiengesellschaft Process for producing a chalcopyrite solar cell
JP2729239B2 (en) 1990-10-17 1998-03-18 昭和シェル石油株式会社 Integrated photovoltaic device
US5528397A (en) 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5336381A (en) 1991-01-07 1994-08-09 United Technologies Corporation Electrophoresis process for preparation of ceramic fibers
US6784492B1 (en) 1991-03-18 2004-08-31 Canon Kabushiki Kaisha Semiconductor device including a gate-insulated transistor
JPH0788063A (en) 1991-05-08 1995-04-04 Sharp Corp Handle holding structure
US5211824A (en) 1991-10-31 1993-05-18 Siemens Solar Industries L.P. Method and apparatus for sputtering of a liquid
US5231047A (en) 1991-12-19 1993-07-27 Energy Conversion Devices, Inc. High quality photovoltaic semiconductor material and laser ablation method of fabrication same
US5261968A (en) 1992-01-13 1993-11-16 Photon Energy, Inc. Photovoltaic cell and method
US5501744A (en) 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
JPH05243596A (en) 1992-03-02 1993-09-21 Showa Shell Sekiyu Kk Manufacture of laminated type solar cell
JP2756050B2 (en) 1992-03-03 1998-05-25 キヤノン株式会社 Photovoltaic device
US5512107A (en) 1992-03-19 1996-04-30 Siemens Solar Gmbh Environmentally stable thin-film solar module
US5248349A (en) 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
US5298086A (en) 1992-05-15 1994-03-29 United Solar Systems Corporation Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby
DE69304143T2 (en) 1992-05-19 1997-01-30 Matsushita Electric Ind Co Ltd Method of making a chalcopyrite type composition
EP0648373B1 (en) 1992-06-29 2002-01-30 United Solar Systems Corporation Microwave energized deposition process with substrate temperature control
EP0578091B1 (en) 1992-06-29 1998-09-02 Canon Kabushiki Kaisha Resin composition for sealing and semiconductor apparatus covered with the sealing resin composition
EP0662247B1 (en) 1992-09-22 1999-03-10 Siemens Aktiengesellschaft Process for rapidly generating a chalkopyrite semiconductor on a substrate
US5474939A (en) 1992-12-30 1995-12-12 Siemens Solar Industries International Method of making thin film heterojunction solar cell
US5436204A (en) 1993-04-12 1995-07-25 Midwest Research Institute Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications
JP3057671B2 (en) 1993-06-14 2000-07-04 キヤノン株式会社 Solar cell module
DE4333407C1 (en) 1993-09-30 1994-11-17 Siemens Ag Solar cell comprising a chalcopyrite absorber layer
US5855974A (en) 1993-10-25 1999-01-05 Ford Global Technologies, Inc. Method of producing CVD diamond coated scribing wheels
US5738731A (en) 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
US5589006A (en) 1993-11-30 1996-12-31 Canon Kabushiki Kaisha Solar battery module and passive solar system using same
EP0658924B1 (en) 1993-12-17 2000-07-12 Canon Kabushiki Kaisha Method of manufacturing electron-emitting device, electron source and image-forming apparatus
CN1269196C (en) 1994-06-15 2006-08-09 精工爱普生株式会社 Method for making thin-film semiconductor device
US5578103A (en) 1994-08-17 1996-11-26 Corning Incorporated Alkali metal ion migration control
DE4442824C1 (en) 1994-12-01 1996-01-25 Siemens Ag Solar cell having higher degree of activity
US5698496A (en) 1995-02-10 1997-12-16 Lucent Technologies Inc. Method for making an anisotropically conductive composite medium
EP0729189A1 (en) 1995-02-21 1996-08-28 Interuniversitair Micro-Elektronica Centrum Vzw Method of preparing solar cells and products obtained thereof
US5674325A (en) 1995-06-07 1997-10-07 Photon Energy, Inc. Thin film photovoltaic device and process of manufacture
US6743723B2 (en) 1995-09-14 2004-06-01 Canon Kabushiki Kaisha Method for fabricating semiconductor device
JP3344287B2 (en) 1996-08-30 2002-11-11 住友電気工業株式会社 Method for cleaning surface of II-VI compound semiconductor crystal
US5977476A (en) 1996-10-16 1999-11-02 United Solar Systems Corporation High efficiency photovoltaic device
JP3249407B2 (en) 1996-10-25 2002-01-21 昭和シェル石油株式会社 Thin-film solar cells composed of chalcopyrite-based multi-compound semiconductor thin-film light-absorbing layers
JP3249408B2 (en) 1996-10-25 2002-01-21 昭和シェル石油株式会社 Method and apparatus for manufacturing thin film light absorbing layer of thin film solar cell
US6169246B1 (en) 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
JP3527815B2 (en) 1996-11-08 2004-05-17 昭和シェル石油株式会社 Method for producing transparent conductive film of thin film solar cell
US5925228A (en) 1997-01-09 1999-07-20 Sandia Corporation Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material
US5985691A (en) 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
JPH1154773A (en) 1997-08-01 1999-02-26 Canon Inc Photovoltaic element and its manufacture
DE19741832A1 (en) 1997-09-23 1999-03-25 Inst Solarenergieforschung Method of manufacturing a solar cell and solar cell
US5948176A (en) 1997-09-29 1999-09-07 Midwest Research Institute Cadmium-free junction fabrication process for CuInSe2 thin film solar cells
US6258620B1 (en) 1997-10-15 2001-07-10 University Of South Florida Method of manufacturing CIGS photovoltaic devices
AU2305399A (en) 1997-11-10 1999-05-31 Don L. Kendall Quantum ridges and tips
WO1999039890A1 (en) 1998-02-05 1999-08-12 Nippon Sheet Glass Co., Ltd. Article with rough surface, process for producing the same, and composition therefor
US6107562A (en) 1998-03-24 2000-08-22 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method for manufacturing the same, and solar cell using the same
US6344608B2 (en) 1998-06-30 2002-02-05 Canon Kabushiki Kaisha Photovoltaic element
US6127202A (en) 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
US6077722A (en) 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US6451415B1 (en) 1998-08-19 2002-09-17 The Trustees Of Princeton University Organic photosensitive optoelectronic device with an exciton blocking layer
JP3428931B2 (en) 1998-09-09 2003-07-22 キヤノン株式会社 Flat panel display dismantling method
US6134049A (en) 1998-09-25 2000-10-17 The Regents Of The University Of California Method to adjust multilayer film stress induced deformation of optics
US6323417B1 (en) 1998-09-29 2001-11-27 Lockheed Martin Corporation Method of making I-III-VI semiconductor materials for use in photovoltaic cells
US6335479B1 (en) 1998-10-13 2002-01-01 Dai Nippon Printing Co., Ltd. Protective sheet for solar battery module, method of fabricating the same and solar battery module
JP2000150861A (en) 1998-11-16 2000-05-30 Tdk Corp Oxide thin film
JP3667178B2 (en) 1998-11-24 2005-07-06 キヤノン株式会社 Method for producing zinc oxide thin film, method for producing photovoltaic element using the same, and photovoltaic element
JP2000173969A (en) 1998-12-03 2000-06-23 Canon Inc Rinsing method and photovoltaic element
JP2001156321A (en) 1999-03-09 2001-06-08 Fuji Xerox Co Ltd Semiconductor device and its manufacturing method
US6160215A (en) 1999-03-26 2000-12-12 Curtin; Lawrence F. Method of making photovoltaic device
US6307148B1 (en) 1999-03-29 2001-10-23 Shinko Electric Industries Co., Ltd. Compound semiconductor solar cell and production method thereof
US6380480B1 (en) 1999-05-18 2002-04-30 Nippon Sheet Glass Co., Ltd Photoelectric conversion device and substrate for photoelectric conversion device
US6328871B1 (en) 1999-08-16 2001-12-11 Applied Materials, Inc. Barrier layer for electroplating processes
AU2001240599A1 (en) 2000-02-07 2001-08-14 Cis Solartechnik Gmbh Flexible metal substrate for cis solar cells, and method for producing the same
US6310281B1 (en) 2000-03-16 2001-10-30 Global Solar Energy, Inc. Thin-film, flexible photovoltaic module
US6372538B1 (en) 2000-03-16 2002-04-16 University Of Delaware Fabrication of thin-film, flexible photovoltaic module
US7194197B1 (en) 2000-03-16 2007-03-20 Global Solar Energy, Inc. Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer
US7414188B2 (en) 2002-01-25 2008-08-19 Konarka Technologies, Inc. Co-sensitizers for dye sensitized solar cells
US6423565B1 (en) 2000-05-30 2002-07-23 Kurt L. Barth Apparatus and processes for the massproduction of photovotaic modules
TWI292583B (en) 2000-08-22 2008-01-11 Harvard College Doped elongated semiconductor articles, growing such articles, devices including such articles and fabicating such devices
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
JP2002196337A (en) 2000-09-06 2002-07-12 Seiko Epson Corp Manufacturing method and manufacturing apparatus for optoelectronic device and manufacturing method and manufacturing apparatus for liquid crystal panel
JP2002167695A (en) 2000-09-19 2002-06-11 Canon Inc Method for depositing zinc oxide film and method for producing photovolatic element using the film
US6576112B2 (en) 2000-09-19 2003-06-10 Canon Kabushiki Kaisha Method of forming zinc oxide film and process for producing photovoltaic device using it
DE10104726A1 (en) 2001-02-02 2002-08-08 Siemens Solar Gmbh Process for structuring an oxide layer applied to a carrier material
JP4827303B2 (en) 2001-03-12 2011-11-30 キヤノン株式会社 Photovoltaic element, TFT, and method for forming i-type semiconductor layer
US6858308B2 (en) 2001-03-12 2005-02-22 Canon Kabushiki Kaisha Semiconductor element, and method of forming silicon-based film
JP2002299670A (en) 2001-04-03 2002-10-11 Canon Inc Silicon-based thin film and photovoltaic element
US7842882B2 (en) 2004-03-01 2010-11-30 Basol Bulent M Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth
US7053294B2 (en) 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
US6537845B1 (en) 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
JP4236081B2 (en) 2001-10-16 2009-03-11 大日本印刷株式会社 Method for producing pattern forming body
WO2003036657A1 (en) 2001-10-19 2003-05-01 Asahi Glass Company, Limited Substrate with transparent conductive oxide film and production method therefor, and photoelectric conversion element
US6635307B2 (en) 2001-12-12 2003-10-21 Nanotek Instruments, Inc. Manufacturing method for thin-film solar cells
US7276749B2 (en) 2002-02-05 2007-10-02 E-Phocus, Inc. Image sensor with microcrystalline germanium photodiode layer
US6690041B2 (en) 2002-05-14 2004-02-10 Global Solar Energy, Inc. Monolithically integrated diodes in thin-film photovoltaic devices
US7560641B2 (en) 2002-06-17 2009-07-14 Shalini Menezes Thin film solar cell configuration and fabrication method
US7291782B2 (en) 2002-06-22 2007-11-06 Nanosolar, Inc. Optoelectronic device and fabrication method
US6852920B2 (en) 2002-06-22 2005-02-08 Nanosolar, Inc. Nano-architected/assembled solar electricity cell
AU2003268487A1 (en) 2002-09-05 2004-03-29 Nanosys, Inc. Nanocomposites
AU2003279708A1 (en) 2002-09-05 2004-03-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
JP3867230B2 (en) 2002-09-26 2007-01-10 本田技研工業株式会社 Mechanical scribing device
WO2004032189A2 (en) 2002-09-30 2004-04-15 Miasolé Manufacturing apparatus and method for large-scale production of thin-film solar cells
JP3570515B2 (en) 2002-10-15 2004-09-29 セイコーエプソン株式会社 Method and apparatus for forming porous insulating film and electronic device manufactured using the method
US6849798B2 (en) 2002-12-17 2005-02-01 General Electric Company Photovoltaic cell using stable Cu2O nanocrystals and conductive polymers
JP4171428B2 (en) 2003-03-20 2008-10-22 三洋電機株式会社 Photovoltaic device
JP2004288898A (en) 2003-03-24 2004-10-14 Canon Inc Manufacturing method of solar cell module
JP2004289034A (en) 2003-03-25 2004-10-14 Canon Inc Treatment method for zinc oxide film and method for manufacturing photovoltaic element using same
JP2004311965A (en) 2003-03-26 2004-11-04 Canon Inc Fabrication method of photovoltaic device
US6936761B2 (en) 2003-03-29 2005-08-30 Nanosolar, Inc. Transparent electrode, optoelectronic apparatus and devices
US7279832B2 (en) 2003-04-01 2007-10-09 Innovalight, Inc. Phosphor materials and illumination devices made therefrom
US20040252488A1 (en) 2003-04-01 2004-12-16 Innovalight Light-emitting ceiling tile
WO2004090995A1 (en) 2003-04-09 2004-10-21 Matsushita Electric Industrial Co., Ltd. Solar cell
JP2004332043A (en) 2003-05-07 2004-11-25 Canon Inc Method and apparatus for forming zinc oxide thin film and method for forming photovoltaic element
US7462774B2 (en) 2003-05-21 2008-12-09 Nanosolar, Inc. Photovoltaic devices fabricated from insulating nanostructured template
US7265037B2 (en) 2003-06-20 2007-09-04 The Regents Of The University Of California Nanowire array and nanowire solar cells and methods for forming the same
EP1653549B1 (en) 2003-07-14 2016-02-17 Fujikura Ltd. Photoelectric conversion element and dye-sensitized solar cell
ATE512467T1 (en) 2003-07-24 2011-06-15 Kaneka Corp METHOD FOR PRODUCING A THIN FILM SILICON SOLAR CELL
AP2149A (en) 2003-08-14 2010-09-01 Univ Johannesburg Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.
WO2005034247A1 (en) 2003-09-03 2005-04-14 Midwest Research Institute Zno/cu(inga)se2 solar cells prepared by vapor phase zn doping
EP1521308A1 (en) 2003-10-02 2005-04-06 Scheuten Glasgroep Ball or grain-shaped semiconductor element to be used in solar cells and method of production; method of production of a solar cell with said semiconductor element and solar cell
JP2005196082A (en) * 2004-01-09 2005-07-21 Fuji Photo Film Co Ltd Image recording apparatus
US20070163643A1 (en) 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer and the use of an inter-metallic material
US8623448B2 (en) 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US20070169810A1 (en) 2004-02-19 2007-07-26 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
EP1724840B1 (en) 2004-02-20 2013-05-08 Sharp Kabushiki Kaisha Photoelectric cell
US7441413B2 (en) 2004-03-23 2008-10-28 Samsung Electronics Co., Ltd. Refrigerator and control method thereof
JP2005311292A (en) 2004-03-25 2005-11-04 Kaneka Corp Substrate for thin film solar cell, manufacturing method therefor, and thin film solar cell using the same
US7122398B1 (en) 2004-03-25 2006-10-17 Nanosolar, Inc. Manufacturing of optoelectronic devices
JP4695850B2 (en) 2004-04-28 2011-06-08 本田技研工業株式会社 Chalcopyrite solar cell
CN100463230C (en) 2004-05-11 2009-02-18 本田技研工业株式会社 Method for manufacturing chalcopyrite thin-film solar cell
JP5000510B2 (en) 2004-06-08 2012-08-15 ナノシス・インク. Method and device for forming nanostructure monolayer and device comprising such monolayer
TW201341440A (en) 2004-06-08 2013-10-16 Sandisk Corp Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
CN101432889A (en) 2004-06-18 2009-05-13 超点公司 Nanostructured materials and photovoltaic devices including nanostructured materials
WO2006009881A2 (en) 2004-06-18 2006-01-26 Innovalight, Inc. Process and apparatus for forming nanoparticles using radiofrequency plasmas
JP2006049768A (en) 2004-08-09 2006-02-16 Showa Shell Sekiyu Kk Cis compound semiconductor thin film solar battery and manufacturing method for light absorbing layer of solar battery
US7750352B2 (en) 2004-08-10 2010-07-06 Pinion Technologies, Inc. Light strips for lighting and backlighting applications
US7276724B2 (en) 2005-01-20 2007-10-02 Nanosolar, Inc. Series interconnected optoelectronic device module assembly
US7732229B2 (en) 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
WO2006034268A2 (en) 2004-09-20 2006-03-30 Georgia Tech Research Corporation Photovoltaic cell
CN101080511A (en) 2004-11-10 2007-11-28 德斯塔尔科技公司 Method and apparatus for forming a thin-film solar cell using a continuous process
WO2006053218A2 (en) 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pressure control system in a photovoltaic substrate deposition
CA2586961A1 (en) 2004-11-10 2006-05-18 Daystar Technologies, Inc. Thermal process for creation of an in-situ junction layer in cigs
US20060219288A1 (en) 2004-11-10 2006-10-05 Daystar Technologies, Inc. Process and photovoltaic device using an akali-containing layer
CA2586970A1 (en) 2004-11-10 2006-05-18 Daystar Technologies, Inc. Vertical production of photovoltaic devices
US20060112983A1 (en) 2004-11-17 2006-06-01 Nanosys, Inc. Photoactive devices and components with enhanced efficiency
US20060130890A1 (en) 2004-12-20 2006-06-22 Palo Alto Research Center Incorporated. Heterojunction photovoltaic cell
JP2006179626A (en) 2004-12-22 2006-07-06 Showa Shell Sekiyu Kk Cis system thin film solar cell module, and its manufacturing method and separation method
JP2006183117A (en) 2004-12-28 2006-07-13 Showa Shell Sekiyu Kk METHOD FOR PRODUCING ZnO-BASED TRANSPARENT ELECTROCONDUCTIVE FILM BY USING MOCVD (ORGANO-METAL CHEMICAL VAPOR DEPOSITION) PROCESS
JP4131965B2 (en) 2004-12-28 2008-08-13 昭和シェル石油株式会社 Method for producing light absorption layer of CIS thin film solar cell
JP2006186200A (en) 2004-12-28 2006-07-13 Showa Shell Sekiyu Kk Precursor film and film formation method therefor
KR100495925B1 (en) 2005-01-12 2005-06-17 (주)인솔라텍 Optical absorber layers for solar cell and manufacturing method thereof
JP5010806B2 (en) 2005-02-01 2012-08-29 日本ペイント株式会社 Powder coating composition and method for coating aluminum wheel
JP4801928B2 (en) 2005-04-25 2011-10-26 富士フイルム株式会社 Organic electroluminescence device
JP4841173B2 (en) 2005-05-27 2011-12-21 昭和シェル石油株式会社 High resistance buffer layer / window layer continuous film forming method and film forming apparatus for CIS thin film solar cell
JP2007012976A (en) 2005-07-01 2007-01-18 Honda Motor Co Ltd Solar cell module
JP3963924B2 (en) 2005-07-22 2007-08-22 本田技研工業株式会社 Chalcopyrite solar cell
WO2007019188A2 (en) 2005-08-05 2007-02-15 First Solar, Inc. Manufacture of photovoltaic devices
FR2890232A1 (en) 2005-08-23 2007-03-02 Saint Gobain COPLANAR DISCHARGE PLANE LAMP AND USES THEREFOR
JP2007123721A (en) 2005-10-31 2007-05-17 Rohm Co Ltd Photoelectric transducer and method of manufacturing same
US7442413B2 (en) 2005-11-18 2008-10-28 Daystar Technologies, Inc. Methods and apparatus for treating a work piece with a vaporous element
DE102005062977B3 (en) 2005-12-28 2007-09-13 Sulfurcell Solartechnik Gmbh Method and apparatus for converting metallic precursor layers to chalcopyrite layers of CIGSS solar cells
US8389852B2 (en) 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
US7235736B1 (en) 2006-03-18 2007-06-26 Solyndra, Inc. Monolithic integration of cylindrical solar cells
WO2007121383A2 (en) 2006-04-13 2007-10-25 Solopower, Inc. Method and apparatus to form thin layers of materials on a base
WO2008088570A1 (en) 2006-04-18 2008-07-24 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
US9105776B2 (en) 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
US8017860B2 (en) 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
US20100029036A1 (en) 2006-06-12 2010-02-04 Robinson Matthew R Thin-film devices formed from solid group iiia particles
US20100297798A1 (en) 2006-07-27 2010-11-25 Adriani Paul M Individually Encapsulated Solar Cells and/or Solar Cell Strings
US7879685B2 (en) 2006-08-04 2011-02-01 Solyndra, Inc. System and method for creating electric isolation between layers comprising solar cells
TW200810167A (en) 2006-08-09 2008-02-16 Ind Tech Res Inst Dye-sensitized solar cell and the method of fabricating thereof
DE102006041046A1 (en) 2006-09-01 2008-03-06 Cis Solartechnik Gmbh & Co. Kg Solar cell, process for the production of solar cells and electrical trace
US8426722B2 (en) 2006-10-24 2013-04-23 Zetta Research and Development LLC—AQT Series Semiconductor grain and oxide layer for photovoltaic cells
US8203073B2 (en) 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8076571B2 (en) 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
FR2908406B1 (en) 2006-11-14 2012-08-24 Saint Gobain POROUS LAYER, METHOD FOR MANUFACTURING THE SAME, AND APPLICATIONS THEREOF
US20080121264A1 (en) 2006-11-28 2008-05-29 Industrial Technology Research Institute Thin film solar module and method of fabricating the same
EP2122684B1 (en) 2006-12-21 2017-02-08 HyET Energy Systems B.V. Method for making solar sub-cells from a solar cell
EP2115783A2 (en) 2007-01-31 2009-11-11 Jeroen K.J. Van Duren Solar cell absorber layer formed from metal ion precursors
US20080204696A1 (en) 2007-02-28 2008-08-28 Tdk Corporation Method of alignment
US7846750B2 (en) 2007-06-12 2010-12-07 Guardian Industries Corp. Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell
US7875945B2 (en) 2007-06-12 2011-01-25 Guardian Industries Corp. Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
KR100882668B1 (en) 2007-07-18 2009-02-06 삼성모바일디스플레이주식회사 Organic light emitting display device and method of manufacturing the same
FR2919429B1 (en) 2007-07-27 2009-10-09 Saint Gobain FRONT PANEL SUBSTRATE OF PHOTOVOLTAIC CELL AND USE OF A SUBSTRATE FOR A FRONT PANEL OF PHOTOVOLTAIC CELL
US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US20090087939A1 (en) 2007-09-28 2009-04-02 Stion Corporation Column structure thin film material using metal oxide bearing semiconductor material for solar cell devices
JP2009099476A (en) 2007-10-19 2009-05-07 Sony Corp Dye-sensitized photoelectric conversion element and its manufacturing method
US8187434B1 (en) 2007-11-14 2012-05-29 Stion Corporation Method and system for large scale manufacture of thin film photovoltaic devices using single-chamber configuration
JP2009135337A (en) 2007-11-30 2009-06-18 Showa Shell Sekiyu Kk Laminate structure, integrated structure and manufacturing method, of cis-based solar cell
US8001283B2 (en) 2008-03-12 2011-08-16 Mips Technologies, Inc. Efficient, scalable and high performance mechanism for handling IO requests
US8981211B2 (en) 2008-03-18 2015-03-17 Zetta Research and Development LLC—AQT Series Interlayer design for epitaxial growth of semiconductor layers
US20090235987A1 (en) 2008-03-24 2009-09-24 Epv Solar, Inc. Chemical Treatments to Enhance Photovoltaic Performance of CIGS
US8980008B2 (en) 2008-04-15 2015-03-17 Hanergy Hi-Tech Power (Hk) Limited Apparatus and methods for manufacturing thin-film solar cells
JP4384237B2 (en) 2008-05-19 2009-12-16 昭和シェル石油株式会社 CIS type thin film solar cell manufacturing method
FR2932009B1 (en) 2008-06-02 2010-09-17 Saint Gobain PHOTOVOLTAIC CELL AND PHOTOVOLTAIC CELL SUBSTRATE
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
US7855089B2 (en) 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8008111B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk copper species treatment of thin film photovoltaic cell and manufacturing method
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
US8026122B1 (en) 2008-09-29 2011-09-27 Stion Corporation Metal species surface treatment of thin film photovoltaic cell and manufacturing method
US8008110B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method
US7960204B2 (en) 2008-09-30 2011-06-14 Stion Corporation Method and structure for adhesion of absorber material for thin film photovoltaic cell
US7910399B1 (en) 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US7947524B2 (en) 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US7863074B2 (en) 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US8053274B2 (en) 2008-09-30 2011-11-08 Stion Corporation Self cleaning large scale method and furnace system for selenization of thin film photovoltaic materials
US8383450B2 (en) 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US8217261B2 (en) 2008-09-30 2012-07-10 Stion Corporation Thin film sodium species barrier method and structure for cigs based thin film photovoltaic cell
US8741689B2 (en) 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
US8344243B2 (en) 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
CN102725859B (en) 2009-02-04 2016-01-27 应用材料公司 Metering and the detection cover group of solar energy production line
US8709856B2 (en) 2009-03-09 2014-04-29 Zetta Research and Development LLC—AQT Series Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques
US8197912B2 (en) 2009-03-12 2012-06-12 International Business Machines Corporation Precision separation of PV thin film stacks
US8263494B2 (en) 2010-01-25 2012-09-11 Stion Corporation Method for improved patterning accuracy for thin film photovoltaic panels
US8142521B2 (en) 2010-03-29 2012-03-27 Stion Corporation Large scale MOCVD system for thin film photovoltaic devices
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
US20110259395A1 (en) 2010-04-21 2011-10-27 Stion Corporation Single Junction CIGS/CIS Solar Module
US20110259413A1 (en) 2010-04-21 2011-10-27 Stion Corporation Hazy Zinc Oxide Film for Shaped CIGS/CIS Solar Cells
US20120018828A1 (en) 2010-07-23 2012-01-26 Stion Corporation Sodium Sputtering Doping Method for Large Scale CIGS Based Thin Film Photovoltaic Materials
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment

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