US20140217434A1 - Light emitting devices and methods - Google Patents
Light emitting devices and methods Download PDFInfo
- Publication number
- US20140217434A1 US20140217434A1 US14/174,559 US201414174559A US2014217434A1 US 20140217434 A1 US20140217434 A1 US 20140217434A1 US 201414174559 A US201414174559 A US 201414174559A US 2014217434 A1 US2014217434 A1 US 2014217434A1
- Authority
- US
- United States
- Prior art keywords
- light emitting
- led
- emitting device
- led chips
- package body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Definitions
- the subject matter disclosed herein relates generally to light emitting devices and methods. More particularly, the subject matter disclosed herein relates to light emitting devices and methods for use in higher voltage applications.
- Light emitting devices such as light emitting diodes (LEDs) may be utilized in products for providing white light (e.g., perceived as being white or near-white), and are developing as replacements for incandescent, fluorescent, and metal halide light products.
- a representative example of an LED lamp comprises a package having at least one LED chip, a portion of which can be coated with a phosphor such as, for example, yttrium aluminum garnet (YAG).
- the LED chip can produce an emission of a desired wavelength within the LED lamp, and the phosphor can in turn emit yellow fluorescence with a peak wavelength of about 550 nm on receiving the emission.
- At least a portion of the emission from LED chip can be transmitted through the phosphor, while at least a portion can be absorbed by the phosphor.
- the portion of the light that is transmitted through the phosphor is mixed with the yellow light emitted by the phosphor, and the viewer perceives the mixture of light emissions as white light.
- red, blue, and green (RGB) light emitting devices may be operated in combination to produce light that is perceived as white.
- Conventional LEDs, packages and methods producing white light can be designed for lower voltage applications.
- novel light emitting devices and methods are provided that are capable of adapting to various application and electrical requirements. It is, therefore, an object of the subject matter disclosed herein to provide light emitting devices and methods comprising improved reliability in higher voltage applications.
- FIG. 1 illustrates a perspective top view of a light emitting diodes (LED) package and LEDs according to an aspect of the subject matter herein;
- LED light emitting diodes
- FIG. 2 illustrates a perspective view of components of LED packages according to an aspect of the subject matter herein;
- FIG. 3 illustrates an end view of LED components shown in FIG. 2 ;
- FIG. 4 illustrates a perspective bottom view of an LED packages according to an aspect of the subject matter herein;
- FIG. 5 illustrates a top plan view of the LED package shown in FIG. 1 ;
- FIG. 6 illustrates a top plan view of LEDs according to an aspect of the subject matter herein;
- FIG. 7 illustrates a top plan view of LEDs according to an aspect of the subject matter herein;
- FIG. 8 illustrates a top plan view of LEDs according to an aspect of the subject matter herein;
- FIG. 9 illustrates a side view of LED packages according to an aspect of the subject matter herein;
- FIG. 10 illustrates a cross sectional view of LED packages according to an aspect of the subject matter herein;
- FIGS. 11A and 11B illustrate LED packages according to an aspect of the subject matter herein.
- FIGS. 12A and 12B illustrate LED packages according to an aspect of the subject matter herein.
- references to a structure or a portion being formed “on” another structure or portion without an intervening structure or portion are described herein as being formed “directly on” the structure or portion.
- an element when an element is referred to as being “directly connected”, “directly attached”, or “directly coupled” to another element, no intervening elements are present.
- relative terms such as “on”, “above”, “upper”, “top”, “lower”, or “bottom” are used herein to describe one structure's or portion's relationship to another structure or portion as illustrated in the figures. It will be understood that relative terms such as “on”, “above”, “upper”, “top”, “lower” or “bottom” are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, structure or portion described as “above” other structures or portions would now be oriented “below” the other structures or portions. Likewise, if devices in the figures are rotated along an axis, structure or portion described as “above”, other structures or portions would now be oriented “next to” or “left of” the other structures or portions. Like numbers refer to like elements throughout.
- Light emitting devices may comprise group III-V nitride (e.g., gallium nitride) based light emitting diodes (LEDs) or lasers fabricated on a silicon carbide substrate, such as those devices manufactured and sold by Cree, Inc. of Durham, North Carolina.
- group III-V nitride e.g., gallium nitride
- LEDs light emitting diodes
- Silicon carbide (SiC) substrates/layers discussed herein may be 4H polytype silicon carbide substrates/layers.
- Other silicon carbide candidate polytypes, such as 3C, 6H, and 15R polytypes, however, may be used.
- SiC substrates are available from Cree, Inc., of Durham, N.C., the assignee of the subject matter herein, and the methods for producing such substrates are set forth in the scientific literature as well as in a number of commonly assigned U.S. Patents, including but not limited to U.S. Pat. No. Re. 34,861; U.S. Pat. No. 4,946,547; and U.S. Pat. No. 5,200,022, the disclosures of which are incorporated by reference herein in their entireties.
- Group III nitride refers to those semiconducting compounds formed between nitrogen and one or more elements in Group III of the periodic table, usually aluminum (Al), gallium (Ga), and indium (In).
- the term also refers to binary, ternary, and quaternary compounds such as GaN, AlGaN and AlInGaN.
- the Group III elements can combine with nitrogen to form binary (e.g., GaN), ternary (e.g., AlGaN), and quaternary (e.g., AlInGaN) compounds. These compounds may have empirical formulas in which one mole of nitrogen is combined with a total of one mole of the Group III elements.
- LEDs disclosed herein may include a substrate
- the crystalline epitaxial growth substrate on which the epitaxial layers comprising an LED are grown may be removed, and the freestanding epitaxial layers may be mounted on a substitute carrier substrate or submount which may have better thermal, electrical, structural and/or optical characteristics than the original substrate.
- the subject matter disclosed herein is not limited to structures having crystalline epitaxial growth substrates and may be used in connection with structures in which the epitaxial layers have been removed from their original growth substrates and bonded to substitute carrier substrates.
- Group III nitride based LEDs may be fabricated on growth substrates (such as a silicon carbide substrates) to provide horizontal devices (with both electrical contacts on a same side of the LED) or vertical devices (with electrical contacts on opposite sides of the LED).
- the growth substrate may be maintained on the LED after fabrication or removed (e.g., by etching, grinding, polishing, etc.).
- the growth substrate may be removed, for example, to reduce a thickness of the resulting LED and/or to reduce a forward voltage through a vertical LED.
- a horizontal device (with or without the growth substrate), for example, may be flip chip bonded (e.g., using solder) to a carrier substrate or printed circuit board, or wire bonded.
- a vertical device may have a first terminal solder bonded to a carrier substrate or printed circuit board and a second terminal wire bonded to the carrier substrate or printed circuit board.
- Examples of vertical and horizontal LED chip structures are discussed by way of example in U.S. Publication No. 2008/0258130 to Bergmann et al. and in U.S. Pat. No. 7,791,061 to Edmond et al., the disclosures of which are hereby incorporated by reference herein in their entireties.
- FIG. 1 illustrates a top perspective view of one aspect or embodiment of a light emitting device and package, for example an LED package, generally designated 10 .
- LED package 10 can comprise a body 12 that can defining a reflector cavity 18 and housing one or more LED chips 14 mounted over an upper surface of one or more thermal elements.
- LED chips 14 can either mount directly to a thermal element, or upon one or more intervening substrates (not shown) between the one or more LED chips 14 and thermal element.
- LED chips 14 can thermally connect to the one or more thermal elements.
- LED chips 14 can electrically connect to one or more electrical components.
- LED package 10 can further comprise an electrostatic discharge (ESD) protection device 16 mounted over a top surface of an electrical component.
- ESD electrostatic discharge
- ESD protection device 16 can comprise a Zener diode, ceramic capacitor, transient voltage suppression (TVS) diode, multilayer varistor, a Shottky diode and/or any other ESD device known in the art.
- ESD protection device 16 can electrically communicate with first and second electrical components through for example, an electrically conductive wire 20 using wirebonding technology.
- body 12 can comprise an upper face 11 , a lower face 13 and at least one exterior side wall.
- Upper face 11 can comprise a corner notch 23 that can convey electrical properties of the package, for example, the side of body 12 comprising the cathode and/or anode.
- Lower face can comprise one or more recesses generally designated 80 defined therein.
- body 12 can comprise four exterior side walls 15 , 17 , 19 , and 21 , respectively.
- body 12 can comprise only one exterior wall thereby forming a substantially round body.
- Exterior walls 15 , 17 , 19 , and 21 can comprise a substantially similar and/or substantially equal length dimension such that LED package 10 comprises a substantially square footprint.
- the length of the one or more exterior walls may be unequal such that body 12 comprises a rectangular footprint and/or any other shaped footprint desired by the manufacturer and/or an end user.
- body 12 can comprise a substantially rounded footprint, or a footprint comprising regular and/or irregular polygonal shapes.
- Body 12 can comprise any suitable material, such as for example a material selected from the group consisting of molded plastic, thermoset plastic, thermoplastic, polymeric, ceramic, nylon, liquid crystal polymer (LCP), reinforced polymers (polymers comprising fibers, ceramics, or composites), and polyphthalamide (PPA) wherein body 12 can be disposed around thermal and electrical components thereby retaining such elements.
- body 12 can form about a thermal element comprising a heat transfer material 32 .
- Body 12 can simultaneously form about one or more electrical components comprising for example, first and second electrical lead components 22 and 24 , respectively.
- body 12 can be form using a molding process, such as injection molding a thermoplastic and/or thermoset material that can be electrically insulating.
- Body 12 can be white or otherwise light in color to minimize light absorbed by LED package 10 .
- body 12 can comprise an upper body portion 12 A and a lower body portion 12 B as may be formed, for example, in upper and lower molding die portions (not shown) respectively.
- Reflector cavity 18 can form, for example, as the inverse of a central protrusion of an upper molding die.
- One or more isolating portions of the body may form between respective thermal and electrical components.
- first and second isolating portions 26 and 28 can form which can electrically and/or thermally isolate one or more thermal elements from one or more electrical components.
- one or more LED chips 14 can mount over heat transfer material 32 and electrically connect to one or both first and second lead components 22 and 24 , respectively, using conductive wire 20 .
- Leadframe element 30 can comprise at least one thermal element and one or more electrical components.
- Thermal element can comprise heat transfer material 32 or substrate such as, for example, a heat slug.
- Thermal element can be isolated, electrically and/or thermally from one or more electrical components.
- Electrical components can comprise first and second lead components 22 and 24 , respectively.
- First and second lead components 22 and 24 may also be collectively referred to as “leads”.
- Thermal element 32 can optionally be disposed between respective medial ends 38 and 58 of first and second lead components 22 and 24 , respectively.
- Body 12 can be molded, disposed, or otherwise formed about leadframe element 30 such that heat transfer material 32 can be disposed on a bottom floor of reflector cavity 18 .
- Body 12 can encase at least a portion of leadframe element 30 thereby retaining portions of heat transfer material 32 and portions of first and second lead components 22 and 24 , respectively.
- One or more protruding portions 34 of heat transfer material can be exposed along external walls 15 and 19 of body 12 to assist with retention of heat transfer material 32 .
- One or more leadframe elements 30 can initially comprise a sheet (not shown) of elements.
- the leadframe elements 30 can be formed and/or singulated from the sheet using any suitable method, for example, stamping, cutting, and/or bending one or more portions of the sheet and/or leadframe elements 30 within the sheet.
- Body 12 of LED package 10 can form about at least a portion of leadframe element 30 and a multitude of LED package subassemblies can be formed about the sheet of leadframe elements 30 .
- the multitude of LED package subassemblies can be separated into individual LED packages 10 by cutting, shearing, or otherwise separating adjacent to exterior walls 15 and 19 and terminal ends 40 and 60 of the first and second lead components, 22 and 24 , respectively, from the sheet of elements. Such separation can expose protruding portions 34 of heat transfer material 32 along exterior walls 15 and 19 of each LED package 10 .
- first and second lead components 22 and 24 formed from a leadframe element 30 are disclosed.
- First and second lead components 22 and 24 can serve as a respective anode and cathode connections supplying the LED chips 14 with current sufficient to cause light emission.
- First and second lead components 22 and 24 can comprise a metal or any other suitable electrically conducting material known in the art.
- First lead component 22 can comprise a respective substrate portion 36 , a medial end 38 , an opposing terminal end 40 , a tab portion 42 , at least one aperture 44 , and one or more bends, for example, first and second bends 46 and 48 , respectively.
- First aperture 44 can form one or more lead segments within first lead component 22 .
- first lead component 22 comprises one aperture 44 and two lead segments 50 and 52 .
- Second lead component 24 can be adjacent and symmetrical with respect to first lead component 22 .
- second lead component 24 can comprise features similar in both form and function to features of first electrical lead component 22 .
- second lead component 24 can comprise a respective substrate portion 56 , a medial end 58 , an opposing terminal end 60 , a tab portion 62 , at least one aperture 64 , and one or more bends, for example, first and second bends 66 and 68 , respectively.
- Each respective lead component 22 and/or 24 can comprise one or more notches N which can become retained within body 12 at exterior walls 15 and 19 .
- the one or more notches N can assist with and handling and placement of LED package 10 .
- notches N can provide areas which a leadframe having an array of package housings retains the housings in place until the appropriate time when the LED packages 10 are singulated.
- the one or more bends for example, respective first and second bends 46 , 48 , 66 , and/or 68 can be defined in lead components 22 and 24 before, during, or preferably after formation of body 12 of LED package 10 .
- second aperture 64 can form one or more lead segments within second lead component 24 .
- second lead component 24 comprises one aperture 64 and two lead segments 61 and 63 . Any number of apertures and/or lead segments can exist in a given electrical lead component.
- Tab portions 42 and 62 can oppose first and second medial ends 38 and 58 .
- first and second tab portions 42 and 62 can extend outwardly away from a center of LED package 10 and terminate at respective distal ends 40 and 60 .
- Apertures 44 and 64 of respective lead components 22 and 24 can separate substrate portions 36 and 45 into multiple electrical lead segment, for example, 50 , 52 , 61 , and 63 .
- each of lead components 22 and 24 can include multiple apertures serving to separate the components into more than two (e.g., three or more) electrical lead segments.
- a first portion of each aperture 44 and 64 can be filled with the same material forming the body 12 .
- each aperture 44 and 64 can be disposed outside exterior walls 17 and 21 of body 12 such that individual electrical lead segments 50 , 52 , 61 , and 63 can be separated from each of the remaining lead segments 50 , 52 , 61 , and 63 by the apertures 44 and 64 along exterior walls 17 and 21 of the body 12 .
- Each lead component 22 and 24 can comprise respective first and second bends 46 , 48 , 66 , and 68 . Bends 46 , 48 , 66 , and 68 can comprise first and second bent portions 47 and 67 , respectively. Bent portions 47 and 67 can be orthogonal to each of respective substrate portions 36 and 56 and tab portions 42 and 62 of first and second lead components 22 and 24 , respectively.
- Bent portions 47 and 67 can be disposed between corresponding substrate portions 36 and 56 and tab portions 42 and 62 .
- bent portions 47 and 67 can comprise perpendicular elements downwardly along exterior walls 17 and 21 of body 12 .
- Bent portions 47 and 67 can comprise transition areas transitioning linear substrate portions 36 and 56 of first and second lead components 22 and 24 , respectively, perpendicularly into respective linear tab portions 42 and 62 .
- Tab portions 42 and 62 can be located parallel and along a different plane from corresponding substrate portions 36 and 56 . Bent portions 47 and 67 can transition respective substrate portions 36 and 56 into the respective tab portions 10 and 62 .
- One or more apertures for example apertures 44 and 64 can extend at least partially into first bends 48 and 68 of respective lead components.
- apertures 44 and 64 can provide multiple benefits including promoting secure retention of lead components 22 and 24 within the body.
- apertures 44 and 64 can reduce the amount of lead material (e.g., metal) subject to being bent to form the first bends 46 and 66 . This can reduce the cost of the overall package and reduce an amount of bending force required to form first bends 46 and 66 . Bending can position at least a portion of each electrical lead component 22 and 24 into first and second tapered portions 25 and 27 ( FIG. 9 ) of body 12 .
- heat transfer material 32 can comprise an upper surface 70 , a lower surface 72 , and one or more lateral protrusions, for example first and second lateral protrusions 74 and 76 , respectively.
- Heat transfer material 32 can optionally comprise a lower protrusion 78 comprising lower surface 72 which can extend from recess 80 disposed in the lower face 13 of LED package 10 .
- Lateral protrusions 74 and 76 can promote secure retention of the heat transfer material 32 by body 12 and can also reduce a potential for leakage (e.g., of solder and/or encapsulant) along interfaces between body 12 and the heat transfer material 32 .
- Such lateral protrusions 74 , 76 can be varied in number, size, shape, and/or orientation ( FIGS. 12A and 12B ).
- Heat transfer material 32 can conduct heat away from LED chips 14 and LED package 10 improving heat dissipation properties thereof.
- FIG. 4 illustrates a perspective bottom view of LED package, generally designated 10 .
- the bottom view can also be representative of a higher voltage LED package 90 ( FIGS. 6 to 8 ).
- LED package 10 can comprise body 12 forming about leadframe element 30 and heat transfer material 32 .
- Heat transfer material 32 can extend from a recess 80 formed in lower face 13 of LED package 10 .
- heat transfer material 32 can comprise bottom surface 72 flush with recess 80 of LED package 10 .
- heat transfer material 32 can comprise lower protruding portion 78 extending from recess 80 of LED package 10 .
- Lower protrusion 78 can comprise any height and width dimension known in the art.
- Recess 80 can provide a space thereby allowing any overflow of attachment materials (not shown), for example, solder and/or flux to move into recess 80 . This feature can eliminate or reduce the need to clean residue left behind by an attachment process, for example, using a “no-clean” solder. Recess 80 can also allow more access for solvents to remove flux after the reflow process if using for example, a “clean” solder which must undergo a cleaning process. Because of process variability, the amount of solder and/or flux that can be dispersed for connecting components, such as heat transfer material 32 and an external circuit (not shown), for example a printed circuit board (PCB) can vary significantly.
- PCB printed circuit board
- recess 80 provides a space for any excess solder and/or flux to flow into thereby producing the area(s) needing cleaning afterwards.
- One or more exposed portions ( FIG. 10 ) of heat transfer material 32 can also be positioned or otherwise located within recess 80 .
- first and second tab portions 42 and 62 of respective first and second lead components 22 and 24 can outwardly extend from approximately a center portion of LED package 10 and bend externally to comprise substantially horizontal components.
- tab portions 42 and 62 can extend from LED package 10 and bend inwardly towards each other.
- tab portions 42 and 62 may comprise a “J-bend” and/or “gull-wing” type of orientation as known in the art.
- Tab portions 42 and 62 can be substantially flush with lower face 13 of LED package.
- Tab portions 42 and 62 can electrically connect and mount over an external circuit and heat sink (not shown), for example, a PCB using any attachment method and materials desired.
- soldering techniques can connect tab portions 42 and 62 , as well as heat transfer element 32 to an external circuit or substrate wherein solder can wet bottom surfaces of each component.
- Heat transfer material 32 can thermally connect to and mount over a heat sink and/or external circuit.
- Such attachment methods can further comprise for example, soldering LED package 10 and PCB in a reflow oven or placing LED package 10 and PCB on a hotplate. Any suitable solder material desired and capable of securing thermal and electrical components, that is heat transfer material 32 and tabs 42 and 62 of respective lead components 22 and 24 to PCB may be used.
- attachment materials can comprise solder pastes of gold, tin, silver, lead and/or copper (Au, Sn, Ag, Pb, and/or Cu), reflow solder flux, and/or any combination thereof.
- solder pastes of gold, tin, silver, lead and/or copper Au, Sn, Ag, Pb, and/or Cu
- reflow solder flux and/or any combination thereof.
- Sn 96.5/Ag 3.0/Cu 0.5 is a common Pb-free solder as is Sn 95.5/Ag 3.8/Cu 0.7.
- Heat transfer material 32 as illustrated by FIG. 4 can comprise a single component formed integrally as one piece or it can comprise several components assembled together using any assembling process desired and/or known in the art.
- lower protruding portion 78 can be formed integrally as one piece of heat transfer material 32 or can assemble to heat transfer material 32 such that it extends from a base portion of heat transfer material 32 .
- heat transfer material 32 can comprise an intermediary thermal structure for transferring heat to another structure such as a heat transfer layer or a heat sink for further heat dissipation.
- heat transfer material 32 can comprise a thermal structure with limited heat capacity and capable of heating up quite quickly if not effectively connected thermally to a further heat transfer device such as an actual heat sink.
- FIGS. 5 to 8 illustrate top views of LED packages, generally designated 10 and 90 , the packages comprising variable arrangements of LED chips 14 .
- One or more LED chips 14 can be arranged over thermal component, for example, heat transfer material 32 , and the arrangements can vary depending upon the application.
- FIG. 5 illustrates one or more LED chips 14 disposed in electrical communication with each of first and second lead components, 22 and 24 , respectively.
- LED chips 14 can electrically connect to first and second lead components 22 and 24 using conductive wires 20 such that a first portion 82 A of LED chip 14 electrically connects to first electrical lead component 22 and a second portion 82 B of LED chip electrically connects to second electrical lead component 24 .
- First portion 82 A and second portion 82 B of LED chip 14 can comprise different electrical polarity, that is, one of first and second portions 82 A and 82 B, respectively, acts as an anode and the remaining portion acts as a cathode such that electrical current can be driven through each LED chip 14 thereby generating light emission.
- connecting each of the one or more LED chips 14 of a plurality of chips to each of the first and second lead components 22 and 24 comprises a first arrangement, or electrical configuration.
- each LED chip 14 can be arranged in parallel with the remaining LED chips 14 of the plurality. That is, each LED chip 14 can receive less than or approximately the same voltage from a power source, enabling lower voltage power sources to be used.
- LED chips 14 can also mount over heat transfer material 32 .
- LED chips can mount directly to heat transfer material 32 .
- LED chips 14 can mount to one or more intervening substrates (not shown) disposed between LED chip 14 and heat transfer material 32 .
- FIG. 5 allows a package to operate with a power source comprising, for example, approximately 3.2 volts (V).
- V voltage
- FIGS. 6 to 8 illustrates examples, without limitation, of LED packages, generally designated 90 , which can be operable for applications having voltage greater than approximately 3.2 V.
- LED package 90 may be operable within a range of approximately 3.2 to 5 V. In other aspects, LED package 90 can be operable within a range of 5 to 10 V.
- LED package 90 can be operable within a range of approximately 10 to 20 V. In further aspects, LED package 90 can be operable at voltages greater than 20 V. LED package 90 can comprise variable arrangements of LED chips 14 within the package, and having the remaining features of LED package 90 of similar form and function as described with respect to LED package 10 .
- LED package 90 can comprise a molded body 12 about leadframe element 30 ( FIGS. 1 to 4 ), the leadframe comprising heat transfer material 32 and first and second lead components 22 and 24 , respectively.
- FIGS. 6 to 8 illustrate higher voltage packages, such as LED package 90 .
- higher voltage packages can be accomplished in part by varying the arrangement, or electrical configuration, of LED chips 14 within the package.
- FIGS. 6 to 8 illustrate LED package 90 comprising one or more LED chips 14 electrically connected in series with at least one other LED chip 14 .
- LED package 90 can comprise a first lead component 22 and a second lead component 24 .
- One of the first and second lead components 22 and 24 respectively, can operate as a cathode and the remaining as an anode for supplying current to the one or more LED chips 14 .
- First and second lead components 22 and 24 can protrude and/or extend outwardly from the body for example, from a lateral side and/or a bottom surface of the LED package 90 .
- Lead components 22 and 24 can bend externally forming bent portions 47 and 67 which can extend downwardly and parallel external sides 17 and 21 .
- LED package 90 can comprise first and second lead components 22 and 24 extending from a center portion of the body and bending externally to form linear, outwardly extending first and second tab portions 42 and 62 , respectively.
- One or more LED chips 14 can electrically communicate to first and/or second lead components 22 and 24 by using one or more electrically conductive wires 20 .
- First and second lead components 22 and 24 can also be electrically and/or thermally isolated from a heat transfer material 32 upon which the one or more LED chips 14 may be directly or indirectly mounted.
- One or more isolating portions 26 and 28 of the LED package 90 can thermally and/or electrically isolate heat transfer material 32 from first and second lead components, 22 and 24 , respectively.
- FIGS. 6 to 8 illustrate LED chips 14 comprising variable arrangements and electrical configurations within LED package 90 . That is, one or more LED chips 14 can be connected to first and second lead components 22 and 24 , respectively, in series, parallel, and/or a combination thereof. This can be accomplished using a wirebonding process wherein one or more LED chips 14 can electrically connect in series to another LED chip 14 using one or more conductive wires 20 . The first and last LED chips 14 of a given series can then connect to first and second lead components 22 and 24 , respectively, using conductive wires 20 for driving current through the LED chips 14 . When LED chips 14 are wired in series, the voltage from a power source can be divided, or otherwise dispersed, between LED chips 14 .
- a higher power source can be used with LEDs, LED packages, and methods because the voltage will be divided across the series of one or more LED chips 14 .
- the higher voltage generated by the power source can comprise a series of respective lower voltages passing through each individual LED chip 14 .
- the power source voltage can operate in a range from 5 to 20V for some applications, and in other applications it may be desirable to operate at greater than 20V.
- FIG. 6 illustrates an arrangement of LED chips 14 , the arrangement generally designated 92 .
- Arrangement 92 comprises three LED chips 14 arranged in an electrical configuration.
- LED chips 14 are illustrated as electrically connected in a series arrangement.
- the first LED chip 14 of the series can be connected to first lead component 22 and the final LED chip in the series arrangement can be connected to second lead component 24 .
- FIG. 7 generally designated 94 , of LED chips 14 within LED package 90 .
- Arrangement 94 comprises six LED chips electrically connected in a series arrangement within LED package 90 .
- the first LED chip 14 of the series can be electrically connected to first lead component 22
- the final LED chip 14 of the series comprising arrangement 94 can be electrically connected to second lead component 24 .
- the respective first and last LED chips 14 within a series connect to lead components such that current can be supplied to the entire series of LED chips 14 .
- Arrangements 92 and 94 illustrated herein can comprise any number or type of LED chips 14 . In general, series arrangements can be more efficient if the same type of LED chip 14 is used such that voltage distributes, or otherwise disperses consistently and evenly through each chip in the series.
- FIG. 8 illustrates an arrangement comprising LED chips 14 mounted in a combination utilizing both series and parallel electrical configurations.
- FIG. 8 illustrates an arrangement, generally designated 96 .
- Arrangement 96 can comprise, for example, two groups of three LED chips 14 , wherein at least one LED chip 14 comprising each group can be electrically connected in series to at least one other LED chip 14 within the respective group.
- a first group LED chips, generally designated 98 A can then electrically connect in parallel with a second group of LED chips, generally designated 98 B.
- Each of the first and second groups 98 A and 98 B, respectively, can comprise one or more LED chips 14 electrically connected in series, the first and last LED chips 14 comprising each of the respective series can connect to first and second lead components 22 and 24 , respectively.
- arrangement 96 utilizes electrical configurations comprising each of a series configuration and a parallel configuration, wherein each of first and second groups 98 A and 98 B comprises one or more LED chips 14 connected in series while first group 98 A can connect in parallel to second group 98 B.
- arrangements 92 , 94 , and 96 depicted in FIGS. 6 to 8 can comprise any number of chips mounted in a series, not limited to the arrangements shown.
- Arrangement 96 can likewise comprise any number of groups connected in parallel. When wiring in series, attention should be given to assure the correct LED terminal of respective LED chips 14 are wirebonded to electrically connect the chips.
- LED chips 14 can comprise a first portion 82 A and a second portion 82 B, the portions comprising different electrical polarities. That is, the first portion 82 A can comprise negative terminal and the second portion 82 B can comprise a positive terminal or vice versa.
- first portion 82 A of a preceding LED chip 14 should preferably become wirebonded and electrically connected to second portion 82 B of a subsequent LED chip 14 . Otherwise, the LED chips 14 may not illuminate as current may not adequately be supplied to the series.
- arrangement 96 can comprise any number of groups and is not limited to the first and second groups, 98 A and 98 B as shown.
- the combination of LED chips mounted in both series and parallel can be adjusted for a given application and/or desired voltage source.
- LED chips 14 can advantageously be connected either in parallel, in series, or using a combination thereof to accommodate various voltage applications.
- LED chips 14 are illustrated as arranged in series in a zigzag configuration of series alignment or design although any suitable alignment or configuration of the LED chips can be used.
- LED chips 14 may be arranged in series horizontally and/or vertically, in a grid or in an array or even in a combination thereof.
- wiring objects in parallel can drain a power supply faster than wiring objects in series, as objects in parallel can end up drawing more current from the power supply. It can also be helpful if all of the LEDs chips being used have the same power specifications.
- FIG. 9 illustrates a side view of LED package, generally designated 90 .
- FIG. 9 could also illustrate LED package 10 , as each of LED packages 10 and 90 could comprise similar features of similar form and function with the exception of an arrangement of LED chips 14 within the packages.
- FIG. 9 illustrates body 12 comprising upper body portion 12 A and lower body portion 12 B as may be formed, for example, in upper and lower molding die portions (not shown) respectively.
- One or more tapered portions, for example first and second tapered portions 25 and 27 can be defined by exterior side walls 17 and 21 of body 12 and can be adjacent to (e.g., below) locations where first and second lead components 22 and 24 extend through the exterior side walls 17 and 21 .
- first and second tapered portions 25 , 27 can be arranged to receive the bent portion 47 , 67 or at least part of the thickness of the bent portion 47 , 67 of first and second lead components 22 and 24 .
- Each of first and second tapered portions 25 and 27 can comprise a depth relative to the corresponding exterior side wall 17 and 21 .
- the depth of each first and second tapered portion 25 and 27 can preferably comprise a depth substantially equal to or greater than an average thickness of the first and second electrical lead components 22 and 24 , respectively.
- First and second tapered portions 25 and 27 can provide multiple benefits.
- first and second tapered portions 25 and 27 can substantially eliminate a presence of material immediately disposed below the first bends 46 and 66 thereby reducing an amount of stress applied to body 12 during formation of the first bends 46 and 66 which can form subsequent to the leadframe element 30 being retained in body 12 .
- Another benefit of first and second tapered portions 25 and 27 is to enable each of first bends 46 and 66 to have a tighter bending radius. This can reduce or eliminate outward extension of the bent portions 47 and 67 which can be substantially parallel to external walls 17 and 21 and at least substantially perpendicular to lower face 13 and first and second lead components 22 and 24 thereby reducing the effective footprint of LED package 10 .
- Reduction of effective footprint of LED packages can enable such packages 10 to be mounted in higher densities upon an external substrate (not shown), and/or optionally overlaid with a Lambertian reflector or diffuser having reduced hole spacing (e.g., within a backlit display device, such as a LCD display).
- tapered portions 25 and 27 can enable LED packages such as 10 and 90 to exhibit enhanced light performance by enabling higher flux density and/or greater lighting uniformity.
- FIG. 10 illustrates a cross-sectional view of LED package 90 .
- Reflector cavity 18 can be filled, coated, or otherwise covered with an encapsulant E.
- Encapsulant E can comprise any suitable material known in the art and can optionally comprise a phosphor or a lumiphor to interact with light emitted by the one or more LED chips 14 and responsively emit light of a desired wavelength spectrum.
- encapsulant E is shown as disposed and filling reflector cavity 18 essentially flush with an upper face 11 of body 12 .
- Encapsulant E may be filled to any suitable level within the reflector cavity 18 or even exceed and extend above reflector cavity 18 .
- FIG. 10 illustrates one or more exposed portions of heat transfer material 14 .
- heat transfer material 32 can comprise exposed portions 73 , 75 , 77 , 72 , 81 , 83 , and 85 protruding from and disposed within recess generally designated 80 of LED package 90 .
- Each exposed portion 73 , 75 , 77 , 72 , 81 , 83 , and 85 can comprise an external surface of heat transfer material 32 , which can be formed integrally as one piece or from more than one portion such as protruding portion 78 illustrated in FIGS. 3 and 4 .
- FIG. 10 also illustrates heat transfer material 32 extending the full thickness of lower portion 12 B of body 12 .
- First and second lead components 22 and 24 rest above lower portion 12 B of body 12 and can be disposed between the respective upper 12 A and lower 12 B portions of body 12 .
- first and second lead components 22 and 24 can comprise substrates 36 , 56 which can be located on a parallel plane above respective tab portions 42 and 62 and orthogonally arranged with respect to bent portions 47 and 77 .
- FIGS. 11A and 11B illustrate simplified schematic cross-sectional views of body 12 which can form LED package 10 and/or 90 .
- LED packages can comprise reflector cavity 18 bounded by a floor F.
- Floor F can comprise portions of first and second lead components 22 and 24 , isolating portions 26 and 28 , as well as top surface 70 of heat transfer material 32 .
- Reflector cavity 18 can be bounded along edges by external side walls 15 , 17 , 19 , and 21 .
- Reflector cavity 18 can comprise any shape, for example, reflector cavity 18 can comprise a rounded wall defining rounded reflector cavity 18 or reflector cavity 18 can comprise inner walls defining a substantially square reflector cavity 18 .
- Reflector cavity 18 can comprise any size and/or shape known in the art.
- Reflector cavity 18 can comprise one or more portions which can transition from inclined portions and/or substantially straight portions with walls perpendicular external walls 15 , 17 , 19 and 21 .
- reflector cavity 18 can comprise a first portion having angle ⁇ relative to a plane perpendicular to floor F.
- reflector cavity 18 can comprise an angle ⁇ relative to a plane perpendicular to floor F.
- reflector cavity 18 comprises an incline angle ⁇ of at least approximately 20 degrees.
- angle ⁇ can comprise at least approximately 30 degrees.
- angle ⁇ can comprise at least approximately 40 degrees.
- Incline angle ⁇ can also comprise at least about 45 degrees, or at least about 50 degrees.
- reflector cavity can comprise inclined at an angle ⁇ of at least about 30 degrees, at least about 40 degrees, or at least about 50 degrees. In further embodiments, the angle ⁇ can comprise about 55 degrees, or at least about 60 degrees. Such angles ⁇ and ⁇ can be greater than typically employed in conventional LED packages.
- the reflector cavity 18 portions described herein can comprise straight walls angled from the floor of the cavity to the upper edge of the package, alternative embodiments may comprise segmented and/or curved cross-sections, that is, the wall extending from the floor F to the upper edge of the package can comprise non-linear cross-sections along at least a portion thereof.
- Reflector cavities 18 comprising alternating angles enables a frontal area of the reflector cavity 18 to be maximized relative to the square-shaped upper face 11 , while providing desirably diffuse output beam characteristics, particularly when multiple LEDs are disposed within reflector cavity 18 .
- Heat transfer material 32 can comprise upper surface 70 , lower surface 72 , lower protruding portion 78 , and lateral protrusions 74 and 76 protruding outward from lateral side walls of the material.
- FIG. 12A discloses lateral protrusions 74 and 76 which can be non-linear and curve upwardly.
- FIG. 12B illustrates an alternative embodiment wherein heat transfer material 32 comprises upwardly angled, or otherwise tapered, lateral protrusions 74 and 76 extending outward and upward from side walls of heat transfer material 32 .
- Lateral protrusions 74 and 76 can comprise any size, shape, and/or arrangement desired.
- Lateral protrusions may be formed using any suitable manufacturing method known in the art. For example, stamping, forging, extruding, milling, and/or machining may be used to form lateral protrusions 74 and 76 .
- lateral protrusions 74 and 76 can be replaced with, or supplemented by, recesses (not shown) in external side walls of heat transfer material 32 to provide a similar sealing utility, with such recesses being formable using similar methods outlined above.
- Heat transfer material 72 can comprise a surface upon which one or more LED chips 14 can mount over and wherein a reflector cavity 18 can be disposed about the LED chips 14 .
Abstract
Light emitting devices and methods such as light emitting diodes (LEDs) are disclosed for use in higher voltage applications. Variable arrangements of LEDs are disclosed herein. Arrangements can include one or more LED chips connected in series, parallel, and/or a combination thereof. LED chips can be disposed in a package body having at least one thermal element and one or more electrical components.
Description
- This application is a continuation of and claims priority to U.S. patent application Ser. No. 13/227,961, filed Sep. 8, 2011, which relates and claims priority to U.S. Provisional Patent Applications Ser. No. 61/404,985 filed Oct. 13, 2010 and is a continuation-in-part application from co-pending U.S. utility patent application Ser. No. 12/479,318 filed Jun. 5, 2009 and U.S. Ser. No. 12/825,075 filed Jun. 28, 2010, the entire contents of which are hereby incorporated by reference herein.
- The subject matter disclosed herein relates generally to light emitting devices and methods. More particularly, the subject matter disclosed herein relates to light emitting devices and methods for use in higher voltage applications.
- Light emitting devices, such as light emitting diodes (LEDs), may be utilized in products for providing white light (e.g., perceived as being white or near-white), and are developing as replacements for incandescent, fluorescent, and metal halide light products. A representative example of an LED lamp comprises a package having at least one LED chip, a portion of which can be coated with a phosphor such as, for example, yttrium aluminum garnet (YAG). The LED chip can produce an emission of a desired wavelength within the LED lamp, and the phosphor can in turn emit yellow fluorescence with a peak wavelength of about 550 nm on receiving the emission. At least a portion of the emission from LED chip can be transmitted through the phosphor, while at least a portion can be absorbed by the phosphor. The portion of the light that is transmitted through the phosphor is mixed with the yellow light emitted by the phosphor, and the viewer perceives the mixture of light emissions as white light. As an alternative to phosphor-converted white light, red, blue, and green (RGB) light emitting devices may be operated in combination to produce light that is perceived as white. Conventional LEDs, packages and methods producing white light can be designed for lower voltage applications.
- Despite availability of various LEDs and LED packages in the marketplace, a need remains for improved packages suitable for applications such as those utilizing higher voltages, to enhance light output performance, enhance thermal performance, improve device reliability, and to promote ease of manufacture.
- In accordance with this disclosure, novel light emitting devices and methods are provided that are capable of adapting to various application and electrical requirements. It is, therefore, an object of the subject matter disclosed herein to provide light emitting devices and methods comprising improved reliability in higher voltage applications.
- These and other objects of the present disclosure as can become apparent from the disclosure herein are achieved, at least in whole or in part, by the subject matter described herein.
- A full and enabling disclosure of the subject matter disclosed herein including the best mode thereof to one of ordinary skill in the art is set forth more particularly in the remainder of the specification, including reference to the accompanying figures, in which:
-
FIG. 1 illustrates a perspective top view of a light emitting diodes (LED) package and LEDs according to an aspect of the subject matter herein; -
FIG. 2 illustrates a perspective view of components of LED packages according to an aspect of the subject matter herein; -
FIG. 3 illustrates an end view of LED components shown inFIG. 2 ; -
FIG. 4 illustrates a perspective bottom view of an LED packages according to an aspect of the subject matter herein; -
FIG. 5 illustrates a top plan view of the LED package shown inFIG. 1 ; -
FIG. 6 illustrates a top plan view of LEDs according to an aspect of the subject matter herein; -
FIG. 7 illustrates a top plan view of LEDs according to an aspect of the subject matter herein; -
FIG. 8 illustrates a top plan view of LEDs according to an aspect of the subject matter herein; -
FIG. 9 illustrates a side view of LED packages according to an aspect of the subject matter herein; -
FIG. 10 illustrates a cross sectional view of LED packages according to an aspect of the subject matter herein; -
FIGS. 11A and 11B illustrate LED packages according to an aspect of the subject matter herein; and -
FIGS. 12A and 12B illustrate LED packages according to an aspect of the subject matter herein. - Reference will now be made in detail to possible aspects or embodiments of the subject matter herein, one or more examples of which are shown in the figures. Each example is provided to explain the subject matter and not act as a limitation. In fact, features illustrated or described as part of one aspect or embodiment can be used in another embodiment to yield still a further embodiment. It is intended that the subject matter disclosed and envisioned herein covers such modifications and variations.
- As illustrated in the various figures, some sizes of structures or portions are exaggerated relative to other structures or portions for illustrative purposes and, thus, are provided to illustrate the general structures of the subject matter disclosed herein. Furthermore, various aspects of the subject matter disclosed herein are described with reference to a structure or a portion being formed on other structures, portions, or both. As will be appreciated by those of skill in the art, references to a structure being formed “on” or “above” another structure or portion contemplates that additional structure, portion, or both may intervene.
- References to a structure or a portion being formed “on” another structure or portion without an intervening structure or portion are described herein as being formed “directly on” the structure or portion. Similarly, it will be understood that when an element is referred to as being “connected”, “attached”, or “coupled” to another element, it can be directly connected, attached, or coupled to the other element, or intervening elements may be present. In contrast, when an element is referred to as being “directly connected”, “directly attached”, or “directly coupled” to another element, no intervening elements are present.
- Furthermore, relative terms such as “on”, “above”, “upper”, “top”, “lower”, or “bottom” are used herein to describe one structure's or portion's relationship to another structure or portion as illustrated in the figures. It will be understood that relative terms such as “on”, “above”, “upper”, “top”, “lower” or “bottom” are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, structure or portion described as “above” other structures or portions would now be oriented “below” the other structures or portions. Likewise, if devices in the figures are rotated along an axis, structure or portion described as “above”, other structures or portions would now be oriented “next to” or “left of” the other structures or portions. Like numbers refer to like elements throughout.
- Light emitting devices according to embodiments described herein may comprise group III-V nitride (e.g., gallium nitride) based light emitting diodes (LEDs) or lasers fabricated on a silicon carbide substrate, such as those devices manufactured and sold by Cree, Inc. of Durham, North Carolina. For example, Silicon carbide (SiC) substrates/layers discussed herein may be 4H polytype silicon carbide substrates/layers. Other silicon carbide candidate polytypes, such as 3C, 6H, and 15R polytypes, however, may be used.
- Appropriate SiC substrates are available from Cree, Inc., of Durham, N.C., the assignee of the subject matter herein, and the methods for producing such substrates are set forth in the scientific literature as well as in a number of commonly assigned U.S. Patents, including but not limited to U.S. Pat. No. Re. 34,861; U.S. Pat. No. 4,946,547; and U.S. Pat. No. 5,200,022, the disclosures of which are incorporated by reference herein in their entireties.
- As used herein, the term “Group III nitride” refers to those semiconducting compounds formed between nitrogen and one or more elements in Group III of the periodic table, usually aluminum (Al), gallium (Ga), and indium (In). The term also refers to binary, ternary, and quaternary compounds such as GaN, AlGaN and AlInGaN. The Group III elements can combine with nitrogen to form binary (e.g., GaN), ternary (e.g., AlGaN), and quaternary (e.g., AlInGaN) compounds. These compounds may have empirical formulas in which one mole of nitrogen is combined with a total of one mole of the Group III elements. Accordingly, formulas such as AlxGa1-xN where 1>x>0 are often used to describe these compounds. Techniques for epitaxial growth of Group III nitrides have become reasonably well developed and reported in the appropriate scientific literature, and in commonly assigned U.S. Patents including: U.S. Pat. No. 5,210,051; U.S. Pat. No. 5,393,993; and U.S. Pat. No. 5,523,589, the disclosures of which are hereby incorporated by reference herein in their entireties.
- Although various embodiments of LEDs disclosed herein may include a substrate, it will be understood by those skilled in the art that the crystalline epitaxial growth substrate on which the epitaxial layers comprising an LED are grown may be removed, and the freestanding epitaxial layers may be mounted on a substitute carrier substrate or submount which may have better thermal, electrical, structural and/or optical characteristics than the original substrate. The subject matter disclosed herein is not limited to structures having crystalline epitaxial growth substrates and may be used in connection with structures in which the epitaxial layers have been removed from their original growth substrates and bonded to substitute carrier substrates.
- Group III nitride based LEDs according to some embodiments of the present subject matter, for example, may be fabricated on growth substrates (such as a silicon carbide substrates) to provide horizontal devices (with both electrical contacts on a same side of the LED) or vertical devices (with electrical contacts on opposite sides of the LED). Moreover, the growth substrate may be maintained on the LED after fabrication or removed (e.g., by etching, grinding, polishing, etc.). The growth substrate may be removed, for example, to reduce a thickness of the resulting LED and/or to reduce a forward voltage through a vertical LED. A horizontal device (with or without the growth substrate), for example, may be flip chip bonded (e.g., using solder) to a carrier substrate or printed circuit board, or wire bonded. A vertical device (without or without the growth substrate) may have a first terminal solder bonded to a carrier substrate or printed circuit board and a second terminal wire bonded to the carrier substrate or printed circuit board. Examples of vertical and horizontal LED chip structures are discussed by way of example in U.S. Publication No. 2008/0258130 to Bergmann et al. and in U.S. Pat. No. 7,791,061 to Edmond et al., the disclosures of which are hereby incorporated by reference herein in their entireties.
- Referring now to
FIGS. 1-12B ,FIG. 1 illustrates a top perspective view of one aspect or embodiment of a light emitting device and package, for example an LED package, generally designated 10.LED package 10 can comprise abody 12 that can defining areflector cavity 18 and housing one ormore LED chips 14 mounted over an upper surface of one or more thermal elements. LED chips 14 can either mount directly to a thermal element, or upon one or more intervening substrates (not shown) between the one ormore LED chips 14 and thermal element. LED chips 14 can thermally connect to the one or more thermal elements. LED chips 14 can electrically connect to one or more electrical components.LED package 10 can further comprise an electrostatic discharge (ESD)protection device 16 mounted over a top surface of an electrical component. For example,ESD protection device 16 can comprise a Zener diode, ceramic capacitor, transient voltage suppression (TVS) diode, multilayer varistor, a Shottky diode and/or any other ESD device known in the art.ESD protection device 16 can electrically communicate with first and second electrical components through for example, an electricallyconductive wire 20 using wirebonding technology. - Still referring to
FIG. 1 ,body 12 can comprise anupper face 11, alower face 13 and at least one exterior side wall.Upper face 11 can comprise acorner notch 23 that can convey electrical properties of the package, for example, the side ofbody 12 comprising the cathode and/or anode. Lower face can comprise one or more recesses generally designated 80 defined therein. In one aspect,body 12 can comprise fourexterior side walls body 12 can comprise only one exterior wall thereby forming a substantially round body.Exterior walls LED package 10 comprises a substantially square footprint. In other aspects, the length of the one or more exterior walls may be unequal such thatbody 12 comprises a rectangular footprint and/or any other shaped footprint desired by the manufacturer and/or an end user. For example,body 12 can comprise a substantially rounded footprint, or a footprint comprising regular and/or irregular polygonal shapes. -
Body 12 can comprise any suitable material, such as for example a material selected from the group consisting of molded plastic, thermoset plastic, thermoplastic, polymeric, ceramic, nylon, liquid crystal polymer (LCP), reinforced polymers (polymers comprising fibers, ceramics, or composites), and polyphthalamide (PPA) whereinbody 12 can be disposed around thermal and electrical components thereby retaining such elements. For example,body 12 can form about a thermal element comprising aheat transfer material 32.Body 12 can simultaneously form about one or more electrical components comprising for example, first and secondelectrical lead components body 12 can be form using a molding process, such as injection molding a thermoplastic and/or thermoset material that can be electrically insulating. Any other forming method known in the art may be used, however, including sintering and/or molding in combination with sintering.Body 12 can be white or otherwise light in color to minimize light absorbed byLED package 10. In addition,body 12 can comprise anupper body portion 12A and a lower body portion 12B as may be formed, for example, in upper and lower molding die portions (not shown) respectively.Reflector cavity 18 can form, for example, as the inverse of a central protrusion of an upper molding die. One or more isolating portions of the body may form between respective thermal and electrical components. For example first and second isolatingportions more LED chips 14 can mount overheat transfer material 32 and electrically connect to one or both first and secondlead components conductive wire 20. - Referring now to
FIGS. 2 and 3 , a leadframe element, generally designated 30, is shown.Leadframe element 30 can comprise at least one thermal element and one or more electrical components. Thermal element can compriseheat transfer material 32 or substrate such as, for example, a heat slug. Thermal element can be isolated, electrically and/or thermally from one or more electrical components. Electrical components can comprise first and secondlead components lead components Thermal element 32 can optionally be disposed between respective medial ends 38 and 58 of first and secondlead components Body 12 can be molded, disposed, or otherwise formed aboutleadframe element 30 such thatheat transfer material 32 can be disposed on a bottom floor ofreflector cavity 18.Body 12 can encase at least a portion ofleadframe element 30 thereby retaining portions ofheat transfer material 32 and portions of first and secondlead components protruding portions 34 of heat transfer material can be exposed alongexternal walls body 12 to assist with retention ofheat transfer material 32. - One or more
leadframe elements 30 can initially comprise a sheet (not shown) of elements. Theleadframe elements 30 can be formed and/or singulated from the sheet using any suitable method, for example, stamping, cutting, and/or bending one or more portions of the sheet and/orleadframe elements 30 within the sheet.Body 12 ofLED package 10 can form about at least a portion ofleadframe element 30 and a multitude of LED package subassemblies can be formed about the sheet ofleadframe elements 30. The multitude of LED package subassemblies can be separated into individual LED packages 10 by cutting, shearing, or otherwise separating adjacent toexterior walls portions 34 ofheat transfer material 32 alongexterior walls LED package 10. - Still referring to
FIGS. 2-3 , electrical components comprising first and secondlead components leadframe element 30 are disclosed. First and secondlead components lead components First lead component 22 can comprise arespective substrate portion 36, amedial end 38, an opposingterminal end 40, atab portion 42, at least oneaperture 44, and one or more bends, for example, first andsecond bends 46 and 48, respectively.First aperture 44 can form one or more lead segments withinfirst lead component 22. For example, in one aspectfirst lead component 22 comprises oneaperture 44 and twolead segments 50 and 52.Second lead component 24 can be adjacent and symmetrical with respect tofirst lead component 22. Additionally,second lead component 24 can comprise features similar in both form and function to features of firstelectrical lead component 22. For example,second lead component 24 can comprise arespective substrate portion 56, amedial end 58, an opposingterminal end 60, atab portion 62, at least oneaperture 64, and one or more bends, for example, first andsecond bends 66 and 68, respectively. Eachrespective lead component 22 and/or 24 can comprise one or more notches N which can become retained withinbody 12 atexterior walls LED package 10. For example, notches N can provide areas which a leadframe having an array of package housings retains the housings in place until the appropriate time when the LED packages 10 are singulated. The one or more bends, for example, respective first andsecond bends lead components body 12 ofLED package 10. Referring tosecond lead component 24,second aperture 64 can form one or more lead segments withinsecond lead component 24. For example, in one aspectsecond lead component 24 comprises oneaperture 64 and twolead segments -
Tab portions body 12, first andsecond tab portions LED package 10 and terminate at respective distal ends 40 and 60. Apertures 44 and 64 of respectivelead components substrate portions 36 and 45 into multiple electrical lead segment, for example, 50, 52, 61, and 63. In one embodiment, each oflead components aperture body 12. A second portion of eachaperture exterior walls body 12 such that individual electricallead segments lead segments apertures exterior walls body 12. Eachlead component second bends Bends bent portions Bent portions respective substrate portions tab portions lead components Bent portions corresponding substrate portions tab portions bent portions exterior walls body 12.Bent portions linear substrate portions lead components linear tab portions Tab portions substrate portions Bent portions respective substrate portions respective tab portions - One or more apertures, for
example apertures - Apertures 44 and 64 can provide multiple benefits including promoting secure retention of
lead components apertures electrical lead component tapered portions 25 and 27 (FIG. 9 ) ofbody 12. - As
FIG. 3 illustrates,heat transfer material 32 can comprise anupper surface 70, alower surface 72, and one or more lateral protrusions, for example first and secondlateral protrusions Heat transfer material 32 can optionally comprise alower protrusion 78 comprisinglower surface 72 which can extend fromrecess 80 disposed in thelower face 13 ofLED package 10.Lateral protrusions heat transfer material 32 bybody 12 and can also reduce a potential for leakage (e.g., of solder and/or encapsulant) along interfaces betweenbody 12 and theheat transfer material 32. Suchlateral protrusions FIGS. 12A and 12B ).Heat transfer material 32 can conduct heat away fromLED chips 14 andLED package 10 improving heat dissipation properties thereof. -
FIG. 4 illustrates a perspective bottom view of LED package, generally designated 10. The bottom view can also be representative of a higher voltage LED package 90 (FIGS. 6 to 8 ).LED package 10 can comprisebody 12 forming aboutleadframe element 30 andheat transfer material 32.Heat transfer material 32 can extend from arecess 80 formed inlower face 13 ofLED package 10. In one aspect,heat transfer material 32 can comprisebottom surface 72 flush withrecess 80 ofLED package 10. In other aspects,heat transfer material 32 can comprise lower protrudingportion 78 extending fromrecess 80 ofLED package 10.Lower protrusion 78 can comprise any height and width dimension known in the art.Recess 80 can provide a space thereby allowing any overflow of attachment materials (not shown), for example, solder and/or flux to move intorecess 80. This feature can eliminate or reduce the need to clean residue left behind by an attachment process, for example, using a “no-clean” solder.Recess 80 can also allow more access for solvents to remove flux after the reflow process if using for example, a “clean” solder which must undergo a cleaning process. Because of process variability, the amount of solder and/or flux that can be dispersed for connecting components, such asheat transfer material 32 and an external circuit (not shown), for example a printed circuit board (PCB) can vary significantly. As solder and/or flux can be very difficult to remove from substrates such as PCBs,recess 80 provides a space for any excess solder and/or flux to flow into thereby producing the area(s) needing cleaning afterwards. One or more exposed portions (FIG. 10 ) ofheat transfer material 32 can also be positioned or otherwise located withinrecess 80. - Still referring to
FIG. 4 , first andsecond tab portions lead components LED package 10 and bend externally to comprise substantially horizontal components. In the alternative,tab portions LED package 10 and bend inwardly towards each other. Thus,tab portions Tab portions lower face 13 of LED package.Tab portions tab portions heat transfer element 32 to an external circuit or substrate wherein solder can wet bottom surfaces of each component.Heat transfer material 32 can thermally connect to and mount over a heat sink and/or external circuit. Such attachment methods can further comprise for example,soldering LED package 10 and PCB in a reflow oven or placingLED package 10 and PCB on a hotplate. Any suitable solder material desired and capable of securing thermal and electrical components, that isheat transfer material 32 andtabs lead components -
Heat transfer material 32 as illustrated byFIG. 4 can comprise a single component formed integrally as one piece or it can comprise several components assembled together using any assembling process desired and/or known in the art. For example, lower protrudingportion 78 can be formed integrally as one piece ofheat transfer material 32 or can assemble to heattransfer material 32 such that it extends from a base portion ofheat transfer material 32. In one aspect,heat transfer material 32 can comprise an intermediary thermal structure for transferring heat to another structure such as a heat transfer layer or a heat sink for further heat dissipation. In this aspect,heat transfer material 32 can comprise a thermal structure with limited heat capacity and capable of heating up quite quickly if not effectively connected thermally to a further heat transfer device such as an actual heat sink. -
FIGS. 5 to 8 illustrate top views of LED packages, generally designated 10 and 90, the packages comprising variable arrangements ofLED chips 14. One ormore LED chips 14 can be arranged over thermal component, for example,heat transfer material 32, and the arrangements can vary depending upon the application.FIG. 5 illustrates one ormore LED chips 14 disposed in electrical communication with each of first and second lead components, 22 and 24, respectively. LED chips 14 can electrically connect to first and secondlead components conductive wires 20 such that afirst portion 82A ofLED chip 14 electrically connects to firstelectrical lead component 22 and asecond portion 82B of LED chip electrically connects to secondelectrical lead component 24.First portion 82A andsecond portion 82B ofLED chip 14 can comprise different electrical polarity, that is, one of first andsecond portions LED chip 14 thereby generating light emission. AsFIG. 5 illustrates, connecting each of the one ormore LED chips 14 of a plurality of chips to each of the first and secondlead components LED chip 14 can be arranged in parallel with the remainingLED chips 14 of the plurality. That is, eachLED chip 14 can receive less than or approximately the same voltage from a power source, enabling lower voltage power sources to be used. When arranged in parallel,LED chips 14 can also mount overheat transfer material 32. In one aspect, LED chips can mount directly toheat transfer material 32. In the alternative,LED chips 14 can mount to one or more intervening substrates (not shown) disposed betweenLED chip 14 andheat transfer material 32. - The LED configuration described and illustrated by
FIG. 5 allows a package to operate with a power source comprising, for example, approximately 3.2 volts (V). In some applications, it may be desirable for LED packages to operate at lower voltages, for example, of less than approximately 3.2 V, for example, approximately 1.5 to 2 V or approximately 2 V to 3.2 V. In other applications, it may be desirable for LED packages to operate at higher voltages.FIGS. 6 to 8 illustrates examples, without limitation, of LED packages, generally designated 90, which can be operable for applications having voltage greater than approximately 3.2 V. For example, in one aspect,LED package 90 may be operable within a range of approximately 3.2 to 5 V. In other aspects,LED package 90 can be operable within a range of 5 to 10 V. In other aspects,LED package 90 can be operable within a range of approximately 10 to 20 V. In further aspects,LED package 90 can be operable at voltages greater than 20V. LED package 90 can comprise variable arrangements ofLED chips 14 within the package, and having the remaining features ofLED package 90 of similar form and function as described with respect toLED package 10. For example,LED package 90 can comprise a moldedbody 12 about leadframe element 30 (FIGS. 1 to 4 ), the leadframe comprisingheat transfer material 32 and first and secondlead components -
FIGS. 6 to 8 illustrate higher voltage packages, such asLED package 90. In accordance with the subject matter herein, higher voltage packages can be accomplished in part by varying the arrangement, or electrical configuration, ofLED chips 14 within the package. For example,FIGS. 6 to 8 illustrateLED package 90 comprising one ormore LED chips 14 electrically connected in series with at least oneother LED chip 14.LED package 90 can comprise afirst lead component 22 and asecond lead component 24. One of the first and secondlead components lead components LED package 90. Leadcomponents bent portions external sides LED package 90 can comprise first and secondlead components second tab portions more LED chips 14 can electrically communicate to first and/or secondlead components conductive wires 20. First and secondlead components heat transfer material 32 upon which the one ormore LED chips 14 may be directly or indirectly mounted. One or more isolatingportions LED package 90 can thermally and/or electrically isolateheat transfer material 32 from first and second lead components, 22 and 24, respectively. -
FIGS. 6 to 8 illustrateLED chips 14 comprising variable arrangements and electrical configurations withinLED package 90. That is, one ormore LED chips 14 can be connected to first and secondlead components more LED chips 14 can electrically connect in series to anotherLED chip 14 using one or moreconductive wires 20. The first andlast LED chips 14 of a given series can then connect to first and secondlead components conductive wires 20 for driving current through the LED chips 14. When LED chips 14 are wired in series, the voltage from a power source can be divided, or otherwise dispersed, between LED chips 14. That is, a higher power source can be used with LEDs, LED packages, and methods because the voltage will be divided across the series of one or more LED chips 14. The higher voltage generated by the power source can comprise a series of respective lower voltages passing through eachindividual LED chip 14. As disclosed previously, the power source voltage can operate in a range from 5 to 20V for some applications, and in other applications it may be desirable to operate at greater than 20V. -
FIG. 6 illustrates an arrangement ofLED chips 14, the arrangement generally designated 92.Arrangement 92 comprises threeLED chips 14 arranged in an electrical configuration. Here, LED chips 14 are illustrated as electrically connected in a series arrangement. Thefirst LED chip 14 of the series can be connected tofirst lead component 22 and the final LED chip in the series arrangement can be connected tosecond lead component 24. This is similar to an alternative arrangement illustrated inFIG. 7 , generally designated 94, ofLED chips 14 withinLED package 90.Arrangement 94 comprises six LED chips electrically connected in a series arrangement withinLED package 90. Thefirst LED chip 14 of the series can be electrically connected tofirst lead component 22, and thefinal LED chip 14 of theseries comprising arrangement 94 can be electrically connected tosecond lead component 24. The respective first andlast LED chips 14 within a series connect to lead components such that current can be supplied to the entire series ofLED chips 14.Arrangements LED chips 14. In general, series arrangements can be more efficient if the same type ofLED chip 14 is used such that voltage distributes, or otherwise disperses consistently and evenly through each chip in the series. -
FIG. 8 illustrates an arrangement comprisingLED chips 14 mounted in a combination utilizing both series and parallel electrical configurations. For example,FIG. 8 illustrates an arrangement, generally designated 96. Arrangement 96 can comprise, for example, two groups of threeLED chips 14, wherein at least oneLED chip 14 comprising each group can be electrically connected in series to at least oneother LED chip 14 within the respective group. A first group LED chips, generally designated 98A can then electrically connect in parallel with a second group of LED chips, generally designated 98B. Each of the first and second groups 98A and 98B, respectively, can comprise one ormore LED chips 14 electrically connected in series, the first andlast LED chips 14 comprising each of the respective series can connect to first and secondlead components more LED chips 14 connected in series while first group 98A can connect in parallel to second group 98B. Note thatarrangements FIGS. 6 to 8 , can comprise any number of chips mounted in a series, not limited to the arrangements shown. Arrangement 96 can likewise comprise any number of groups connected in parallel. When wiring in series, attention should be given to assure the correct LED terminal ofrespective LED chips 14 are wirebonded to electrically connect the chips. As depicted earlier,LED chips 14 can comprise afirst portion 82A and asecond portion 82B, the portions comprising different electrical polarities. That is, thefirst portion 82A can comprise negative terminal and thesecond portion 82B can comprise a positive terminal or vice versa. When connecting LED chips in series,first portion 82A of a precedingLED chip 14 should preferably become wirebonded and electrically connected tosecond portion 82B of asubsequent LED chip 14. Otherwise, the LED chips 14 may not illuminate as current may not adequately be supplied to the series. As disclosed previously, arrangement 96 can comprise any number of groups and is not limited to the first and second groups, 98A and 98B as shown. The combination of LED chips mounted in both series and parallel can be adjusted for a given application and/or desired voltage source. Thus,LED chips 14 can advantageously be connected either in parallel, in series, or using a combination thereof to accommodate various voltage applications. - Still referring to
FIGS. 6 to 8 , for illustration purposes and without limitation,LED chips 14 are illustrated as arranged in series in a zigzag configuration of series alignment or design although any suitable alignment or configuration of the LED chips can be used. For example, and without limitation,LED chips 14 may be arranged in series horizontally and/or vertically, in a grid or in an array or even in a combination thereof. Also, regarding different applications using LED packages, and in general, wiring objects in parallel can drain a power supply faster than wiring objects in series, as objects in parallel can end up drawing more current from the power supply. It can also be helpful if all of the LEDs chips being used have the same power specifications. -
FIG. 9 illustrates a side view of LED package, generally designated 90.FIG. 9 could also illustrateLED package 10, as each ofLED packages LED chips 14 within the packages.FIG. 9 illustratesbody 12 comprisingupper body portion 12A and lower body portion 12B as may be formed, for example, in upper and lower molding die portions (not shown) respectively. One or more tapered portions, for example first and secondtapered portions exterior side walls body 12 and can be adjacent to (e.g., below) locations where first and secondlead components exterior side walls tapered portions bent portion bent portion lead components tapered portions exterior side wall portion electrical lead components tapered portions tapered portions body 12 during formation of the first bends 46 and 66 which can form subsequent to theleadframe element 30 being retained inbody 12. Another benefit of first and secondtapered portions first bends bent portions external walls lower face 13 and first and secondlead components LED package 10. Reduction of effective footprint of LED packages can enablesuch packages 10 to be mounted in higher densities upon an external substrate (not shown), and/or optionally overlaid with a Lambertian reflector or diffuser having reduced hole spacing (e.g., within a backlit display device, such as a LCD display). Thus, taperedportions -
FIG. 10 illustrates a cross-sectional view ofLED package 90.Reflector cavity 18 can be filled, coated, or otherwise covered with an encapsulant E. Encapsulant E can comprise any suitable material known in the art and can optionally comprise a phosphor or a lumiphor to interact with light emitted by the one ormore LED chips 14 and responsively emit light of a desired wavelength spectrum. For illustration purposes, encapsulant E is shown as disposed and fillingreflector cavity 18 essentially flush with anupper face 11 ofbody 12. Encapsulant E, however, may be filled to any suitable level within thereflector cavity 18 or even exceed and extend abovereflector cavity 18. -
FIG. 10 illustrates one or more exposed portions ofheat transfer material 14. For example,heat transfer material 32 can comprise exposedportions LED package 90. Each exposedportion heat transfer material 32, which can be formed integrally as one piece or from more than one portion such as protrudingportion 78 illustrated inFIGS. 3 and 4 .FIG. 10 also illustratesheat transfer material 32 extending the full thickness of lower portion 12B ofbody 12. First and secondlead components body 12 and can be disposed between the respective upper 12A and lower 12B portions ofbody 12. As illustrated byFIGS. 3 and 4 , first and secondlead components substrates respective tab portions bent portions 47 and 77. -
FIGS. 11A and 11B illustrate simplified schematic cross-sectional views ofbody 12 which can formLED package 10 and/or 90. LED packages can comprisereflector cavity 18 bounded by a floor F. Floor F can comprise portions of first and secondlead components portions top surface 70 ofheat transfer material 32.Reflector cavity 18 can be bounded along edges byexternal side walls Reflector cavity 18 can comprise any shape, for example,reflector cavity 18 can comprise a rounded wall definingrounded reflector cavity 18 orreflector cavity 18 can comprise inner walls defining a substantiallysquare reflector cavity 18.Reflector cavity 18 can comprise any size and/or shape known in the art.Reflector cavity 18 can comprise one or more portions which can transition from inclined portions and/or substantially straight portions with walls perpendicularexternal walls reflector cavity 18 can comprise a first portion having angle θ relative to a plane perpendicular to floor F. Similarly, and possibly in the same package,reflector cavity 18 can comprise an angle φ relative to a plane perpendicular to floor F. In one aspect,reflector cavity 18 comprises an incline angle θ of at least approximately 20 degrees. In another aspect, angle θ can comprise at least approximately 30 degrees. In further aspects, angle θ can comprise at least approximately 40 degrees. Incline angle θ can also comprise at least about 45 degrees, or at least about 50 degrees. - Referring to
FIG. 11B , reflector cavity can comprise inclined at an angle φ of at least about 30 degrees, at least about 40 degrees, or at least about 50 degrees. In further embodiments, the angle φ can comprise about 55 degrees, or at least about 60 degrees. Such angles θ and φ can be greater than typically employed in conventional LED packages. Although thereflector cavity 18 portions described herein can comprise straight walls angled from the floor of the cavity to the upper edge of the package, alternative embodiments may comprise segmented and/or curved cross-sections, that is, the wall extending from the floor F to the upper edge of the package can comprise non-linear cross-sections along at least a portion thereof. If such walls are curved or segmented, then the inclination angles mentioned above may correspond to an average angle of a curved or segmented wall, or an angle between endpoints of such a wall.Reflector cavities 18 comprising alternating angles enables a frontal area of thereflector cavity 18 to be maximized relative to the square-shapedupper face 11, while providing desirably diffuse output beam characteristics, particularly when multiple LEDs are disposed withinreflector cavity 18. - Referring to
FIGS. 12A and 12B , alternative embodiments ofheat transfer material 32 are illustrated.Heat transfer material 32 can compriseupper surface 70,lower surface 72, lower protrudingportion 78, andlateral protrusions FIG. 12A discloseslateral protrusions FIG. 12B illustrates an alternative embodiment whereinheat transfer material 32 comprises upwardly angled, or otherwise tapered,lateral protrusions heat transfer material 32.Lateral protrusions lateral protrusions lateral protrusions heat transfer material 32 to provide a similar sealing utility, with such recesses being formable using similar methods outlined above.Heat transfer material 72 can comprise a surface upon which one ormore LED chips 14 can mount over and wherein areflector cavity 18 can be disposed about the LED chips 14. - Embodiments of the present disclosure shown in the drawings and described above are exemplary of numerous embodiments that can be made within the scope of the appended claims. It is contemplated that the configurations of LED devices, methods, and packages capable of higher voltage applications can comprise numerous configurations other than those specifically disclosed.
Claims (36)
1. A light emitting device, the device comprising:
a package body;
a leadframe comprising a first lead component and a second lead component;
a thermal component that is physically isolated from the first and second lead components via portions of the package body; and
a first group of LEDs arranged over the thermal component, wherein the first group of LEDs comprises a first LED electrically connected in series to a second LED.
2. The light emitting device according to claim 1 , wherein the package body comprises a molded plastic body.
3. The light emitting device according to claim 1 , wherein the package body is formed about a portion of the thermal component and a portion of each of the first and second lead components
4. The light emitting device according to claim 1 , wherein the first group of LEDs is electrically connected in parallel to a second group of LEDs.
5. The light emitting device according to claim 4 , wherein the second group of LEDs comprises a preceding LED electrically connected in series to a subsequent LED.
6. The light emitting device according to claim 5 , wherein the first group comprises LEDs arranged in a first zigzag configuration and the second group comprises LEDs arranged in a second zigzag configuration.
7. A method of providing a light emitting device, the method comprising:
providing a package body;
providing a leadframe within a portion of the package body, the leadframe comprising a first lead component and a second lead component;
providing a thermal component within a portion of the package body, the thermal component being physically isolated from the first and second lead components via portions of the package body; and
arranging a first group of LEDs over the thermal component, wherein the first group of LEDs comprises a first LED electrically connected in series to a second LED.
8. The method according to claim 7 , further comprising providing a second group of LEDs electrically connected in parallel to the first group of LEDs.
9. The method according to claim 7 , further comprising electrically connecting each of the first and second groups of LEDs to the first and second lead components.
10. The method according to claim 7 , further comprising arranging the first and second group of LEDs within a package body such that each of the first and second groups comprises a zigzag series configuration.
11. The method according to claim 7 , wherein the package body comprises molded plastic.
12. The method according to claim 7 , further comprising filling at least a portion of the package body with an encapsulant comprising a phosphor.
13. A light emitting device comprising:
a surface mount package body comprising an anode and a cathode; and
at least one string of serially connected light emitting diode (LED) chips provided between the anode and the cathode.
14. The light emitting device according to claim 13 , wherein each LED chip in the string of LED chips is configured to emit a same color of light.
15. The light emitting device according to claim 13 , wherein each LED chip in the string of LED chips is configured to emit at least two different colors of light.
16. The light emitting device according to claim 13 , wherein the string of LED chips is configured to emit light that is red, blue, green, or any combination thereof.
17. The light emitting device according to claim 13 , wherein the surface mount package body comprises a thermal component that is physically isolated from the anode and cathode.
18. The light emitting device according to claim 17 , wherein the string of LED chips is directly attached to the thermal component.
19. The light emitting device according to claim 13 , wherein the package body comprises a molded plastic body.
20. The light emitting device according to claim 13 , further comprising at least two strings of serially connected LED chips.
21. The light emitting device according to claim 13 , wherein the first and second strings are electrically connected in parallel between the anode and the cathode.
22. The light emitting device according to claim 13 , further comprising an encapsulant disposed over the string of LED chips.
23. The light emitting device according to claim 22 , wherein the encapsulant comprises silicone and a phosphoric material.
24. The light emitting device according to claim 22 , wherein the encapsulant comprises silicone.
25. The light emitting device according to claim 13 , wherein the package body comprises a cavity, and wherein the string of LED chips is mounted to a surface of the cavity.
26. The light emitting device according to claim 25 , wherein the cavity comprises a reflective surface.
27. A method of providing a light emitting device, the method comprising:
providing a surface mount package body comprising an anode and a cathode;
providing one or more light emitting diode (LED) chips; and
serially connecting the LED chips between the anode and the cathode.
28. The method according to claim 27 , wherein providing the one or more LED chips comprises providing chips configured to emit a same color of light.
29. The method according to claim 27 , wherein providing the one or more LED chips comprises providing chips configured to emit at least two colors of light.
30. The method according to claim 27 , wherein providing the one or more LED chips comprises providing LED chips configured to emit light that is red, blue, green, or any combination thereof.
31. The method according to claim 27 , further comprising mounting the LED chips over a thermal component that is physically isolated from the anode and cathode.
32. The method according to claim 27 , wherein providing the surface mount package body comprises molding a plastic body.
33. The method to claim 27 , further comprising serially connecting the LED chips in at least two strings.
34. The method according to claim 33 , wherein the two strings are electrically connected in parallel between the anode and the cathode.
35. The method according to claim 27 , further comprising encapsulating the string of LED chips.
36. The method according to claim 27 , further comprising mounting the string of LED chips within a cavity of the package body.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/174,559 US20140217434A1 (en) | 2010-06-28 | 2014-02-06 | Light emitting devices and methods |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/825,075 US8598602B2 (en) | 2009-01-12 | 2010-06-28 | Light emitting device packages with improved heat transfer |
US40498510P | 2010-10-13 | 2010-10-13 | |
US13/227,961 US8648359B2 (en) | 2010-06-28 | 2011-09-08 | Light emitting devices and methods |
US14/174,559 US20140217434A1 (en) | 2010-06-28 | 2014-02-06 | Light emitting devices and methods |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/227,961 Continuation US8648359B2 (en) | 2010-06-28 | 2011-09-08 | Light emitting devices and methods |
Publications (1)
Publication Number | Publication Date |
---|---|
US20140217434A1 true US20140217434A1 (en) | 2014-08-07 |
Family
ID=45938899
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/227,961 Active US8648359B2 (en) | 2010-06-28 | 2011-09-08 | Light emitting devices and methods |
US14/174,559 Abandoned US20140217434A1 (en) | 2010-06-28 | 2014-02-06 | Light emitting devices and methods |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/227,961 Active US8648359B2 (en) | 2010-06-28 | 2011-09-08 | Light emitting devices and methods |
Country Status (7)
Country | Link |
---|---|
US (2) | US8648359B2 (en) |
EP (1) | EP2628196B1 (en) |
JP (1) | JP2013540362A (en) |
KR (1) | KR101578090B1 (en) |
CN (1) | CN102959748A (en) |
TW (1) | TWI591866B (en) |
WO (1) | WO2012050994A2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130228796A1 (en) * | 2012-03-02 | 2013-09-05 | Cree, Inc. | High voltage semiconductor devices including electric arc suppression material and methods of forming the same |
US20130270588A1 (en) * | 2012-04-11 | 2013-10-17 | Lite-On Technology Corp. | Lead frame assembly, led package and led light bar |
US20130335967A1 (en) * | 2011-03-03 | 2013-12-19 | Osram Gmbh | Lighting device |
US9111778B2 (en) | 2009-06-05 | 2015-08-18 | Cree, Inc. | Light emitting diode (LED) devices, systems, and methods |
US9123874B2 (en) | 2009-01-12 | 2015-09-01 | Cree, Inc. | Light emitting device packages with improved heat transfer |
US11101408B2 (en) | 2011-02-07 | 2021-08-24 | Creeled, Inc. | Components and methods for light emitting diode (LED) lighting |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7923739B2 (en) | 2009-06-05 | 2011-04-12 | Cree, Inc. | Solid state lighting device |
US8860043B2 (en) | 2009-06-05 | 2014-10-14 | Cree, Inc. | Light emitting device packages, systems and methods |
US8686445B1 (en) | 2009-06-05 | 2014-04-01 | Cree, Inc. | Solid state lighting devices and methods |
US8648359B2 (en) | 2010-06-28 | 2014-02-11 | Cree, Inc. | Light emitting devices and methods |
US8269244B2 (en) | 2010-06-28 | 2012-09-18 | Cree, Inc. | LED package with efficient, isolated thermal path |
USD643819S1 (en) | 2010-07-16 | 2011-08-23 | Cree, Inc. | Package for light emitting diode (LED) lighting |
USD679842S1 (en) | 2011-01-03 | 2013-04-09 | Cree, Inc. | High brightness LED package |
US8610140B2 (en) | 2010-12-15 | 2013-12-17 | Cree, Inc. | Light emitting diode (LED) packages, systems, devices and related methods |
TW201251140A (en) | 2011-01-31 | 2012-12-16 | Cree Inc | High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion |
DE102011083691B4 (en) * | 2011-09-29 | 2020-03-12 | Osram Gmbh | OPTOELECTRONIC SEMICONDUCTOR COMPONENT |
KR101957884B1 (en) * | 2012-05-14 | 2019-03-13 | 엘지이노텍 주식회사 | Light emitting device, manufactured method of the light emitting deviceand lighting apparatus |
CN104412400B (en) * | 2012-07-30 | 2017-07-11 | 优志旺电机株式会社 | Light source cell |
JP6119240B2 (en) * | 2012-12-27 | 2017-04-26 | 日亜化学工業株式会社 | Light emitting device |
JP6107136B2 (en) * | 2012-12-29 | 2017-04-05 | 日亜化学工業株式会社 | LIGHT EMITTING DEVICE PACKAGE, LIGHT EMITTING DEVICE INCLUDING THE SAME, AND LIGHTING DEVICE EQUIPPED WITH THE LIGHT EMITTING DEVICE |
DE102013202904A1 (en) * | 2013-02-22 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for its production |
WO2014141009A1 (en) * | 2013-03-15 | 2014-09-18 | Koninklijke Philips N.V. | Light emitting structure and mount |
WO2014151913A1 (en) * | 2013-03-15 | 2014-09-25 | Hubbell Incorporated | Led luminaire having improved performance |
JP6484396B2 (en) | 2013-06-28 | 2019-03-13 | 日亜化学工業株式会社 | Light emitting device package and light emitting device using the same |
US10234119B2 (en) * | 2014-03-24 | 2019-03-19 | Cree, Inc. | Multiple voltage light emitter packages, systems, and related methods |
TWI553264B (en) | 2014-05-23 | 2016-10-11 | 億光電子工業股份有限公司 | Carrier leadframe and manufacturung method thereof and light emitting device and manufacturung method from said carrier leadframe |
US10177292B2 (en) | 2014-05-23 | 2019-01-08 | Everlight Electronics Co., Ltd. | Carrier, carrier leadframe, and light emitting device |
KR102198695B1 (en) | 2014-09-03 | 2021-01-06 | 삼성전자주식회사 | Light source module and backlight unit having the same |
US9711700B2 (en) | 2014-12-26 | 2017-07-18 | Nichia Corporation | Light emitting device and method for producing the same |
JP6332251B2 (en) * | 2015-12-09 | 2018-05-30 | 日亜化学工業株式会社 | Package manufacturing method, light emitting device manufacturing method, package, and light emitting device |
JP6680274B2 (en) * | 2017-06-27 | 2020-04-15 | 日亜化学工業株式会社 | Light emitting device and lead frame with resin |
CN110858616B (en) * | 2018-08-24 | 2021-03-19 | 广东锐陆光电科技有限公司 | LED support machining method and LED support |
KR102011110B1 (en) * | 2019-01-25 | 2019-08-14 | 금호이앤지 (주) | LED Converter Using Solid Capacitor |
US11252821B2 (en) | 2019-08-13 | 2022-02-15 | CoreLed Systems, LLC | Optical surface-mount devices |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
US20090140271A1 (en) * | 2007-11-30 | 2009-06-04 | Wen-Jyh Sah | Light emitting unit |
US20110163683A1 (en) * | 2011-02-22 | 2011-07-07 | Quarkstar, Llc | Solid State Lamp Using Light Emitting Strips |
Family Cites Families (116)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US34861A (en) | 1862-04-01 | Improved washing-machine | ||
US4679118A (en) | 1984-08-07 | 1987-07-07 | Aavid Engineering, Inc. | Electronic chip-carrier heat sinks |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US4946547A (en) | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
JPH03154368A (en) * | 1989-11-10 | 1991-07-02 | Nitto Denko Corp | Semiconductor device |
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5200022A (en) | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
JP3154368B2 (en) * | 1994-02-25 | 2001-04-09 | 新東工業株式会社 | Gas curing type mold making equipment |
AU2231795A (en) | 1994-04-14 | 1995-11-10 | Olin Corporation | Electronic package having improved wire bonding capability |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
KR100500919B1 (en) | 1997-02-10 | 2005-07-14 | 마츠시타 덴끼 산교 가부시키가이샤 | Resin sealed semiconductor device and method for manufacturing the same |
DE19755734A1 (en) | 1997-12-15 | 1999-06-24 | Siemens Ag | Method for producing a surface-mountable optoelectronic component |
US6274924B1 (en) | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
JP3718131B2 (en) | 2001-03-16 | 2005-11-16 | 松下電器産業株式会社 | High frequency module and manufacturing method thereof |
DE10117889A1 (en) | 2001-04-10 | 2002-10-24 | Osram Opto Semiconductors Gmbh | Leadframe used for a light emitting diode component comprises a chip assembly region, a wire connecting region, external electrical connecting strips, and a support part coupled with a thermal connecting part |
US6498355B1 (en) | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
US6936855B1 (en) | 2002-01-16 | 2005-08-30 | Shane Harrah | Bendable high flux LED array |
JP4211359B2 (en) | 2002-03-06 | 2009-01-21 | 日亜化学工業株式会社 | Manufacturing method of semiconductor device |
US7244965B2 (en) | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
US7775685B2 (en) | 2003-05-27 | 2010-08-17 | Cree, Inc. | Power surface mount light emitting die package |
US7692206B2 (en) | 2002-12-06 | 2010-04-06 | Cree, Inc. | Composite leadframe LED package and method of making the same |
KR101007164B1 (en) | 2003-03-14 | 2011-01-12 | 스미토모 덴키 고교 가부시키가이샤 | Semiconductor device |
US7528421B2 (en) * | 2003-05-05 | 2009-05-05 | Lamina Lighting, Inc. | Surface mountable light emitting diode assemblies packaged for high temperature operation |
JP4645071B2 (en) | 2003-06-20 | 2011-03-09 | 日亜化学工業株式会社 | Package molded body and semiconductor device using the same |
USD514073S1 (en) | 2003-07-09 | 2006-01-31 | Nichai Corporation | Light emitting diode |
US7491980B2 (en) | 2003-08-26 | 2009-02-17 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device mounting member, light-emitting diode constituting member using same, and light-emitting diode using same |
US7791061B2 (en) | 2004-05-18 | 2010-09-07 | Cree, Inc. | External extraction light emitting diode based upon crystallographic faceted surfaces |
US7456499B2 (en) | 2004-06-04 | 2008-11-25 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
KR100587020B1 (en) | 2004-09-01 | 2006-06-08 | 삼성전기주식회사 | High power light emitting diode package |
WO2006065007A1 (en) * | 2004-12-16 | 2006-06-22 | Seoul Semiconductor Co., Ltd. | Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method |
US7224047B2 (en) | 2004-12-18 | 2007-05-29 | Lsi Corporation | Semiconductor device package with reduced leakage |
US7564180B2 (en) | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
US7777247B2 (en) | 2005-01-14 | 2010-08-17 | Cree, Inc. | Semiconductor light emitting device mounting substrates including a conductive lead extending therein |
KR101241973B1 (en) * | 2005-03-11 | 2013-03-08 | 서울반도체 주식회사 | Luminous apparatus and method for manufacturing the same |
US8076680B2 (en) * | 2005-03-11 | 2011-12-13 | Seoul Semiconductor Co., Ltd. | LED package having an array of light emitting cells coupled in series |
KR100591687B1 (en) * | 2005-05-06 | 2006-06-22 | 럭스피아 주식회사 | Multi-chip light emitting diode package developing color gamut and back light unit employing the same |
KR100592508B1 (en) * | 2005-07-15 | 2006-06-26 | 한국광기술원 | High power led package with beacon type substrate |
US7550319B2 (en) | 2005-09-01 | 2009-06-23 | E. I. Du Pont De Nemours And Company | Low temperature co-fired ceramic (LTCC) tape compositions, light emitting diode (LED) modules, lighting devices and method of forming thereof |
JP2007073836A (en) | 2005-09-08 | 2007-03-22 | Sharp Corp | Optical coupling device, manufacturing method thereof, and electronic apparatus having the same |
KR100616695B1 (en) | 2005-10-04 | 2006-08-28 | 삼성전기주식회사 | High power light emitting diode package |
KR101241650B1 (en) | 2005-10-19 | 2013-03-08 | 엘지이노텍 주식회사 | Package of light emitting diode |
US7429790B2 (en) | 2005-10-24 | 2008-09-30 | Freescale Semiconductor, Inc. | Semiconductor structure and method of manufacture |
US7943946B2 (en) | 2005-11-21 | 2011-05-17 | Sharp Kabushiki Kaisha | Light emitting device |
KR100780176B1 (en) | 2005-11-25 | 2007-11-27 | 삼성전기주식회사 | Side-view light emitting diode package |
USD573113S1 (en) | 2005-12-09 | 2008-07-15 | Nichia Corporation | Light emitting diode |
US7400049B2 (en) | 2006-02-16 | 2008-07-15 | Stats Chippac Ltd. | Integrated circuit package system with heat sink |
JP4952233B2 (en) | 2006-04-19 | 2012-06-13 | 日亜化学工業株式会社 | Semiconductor device |
JP4830768B2 (en) | 2006-05-10 | 2011-12-07 | 日亜化学工業株式会社 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
KR100904152B1 (en) | 2006-06-30 | 2009-06-25 | 서울반도체 주식회사 | Leadframe having a heat sink supporting part, fabricating method of the light emitting diode package using the same and light emitting diode package fabricated by the method |
KR100854328B1 (en) | 2006-07-07 | 2008-08-28 | 엘지전자 주식회사 | LED package and method for making the same |
TW200807745A (en) | 2006-07-28 | 2008-02-01 | Delta Electronics Inc | Light-emitting heat-dissipating device and packaging method thereof |
JP5054345B2 (en) * | 2006-09-12 | 2012-10-24 | リンテック株式会社 | Adhesive film for windows |
JP2008071954A (en) * | 2006-09-14 | 2008-03-27 | Mimaki Denshi Buhin Kk | Light source device |
USD566055S1 (en) | 2006-09-21 | 2008-04-08 | Lg Innotek Co., Ltd. | Light-emitting diode (LED) |
US7852015B1 (en) | 2006-10-11 | 2010-12-14 | SemiLEDs Optoelectronics Co., Ltd. | Solid state lighting system and maintenance method therein |
USD580375S1 (en) | 2006-10-12 | 2008-11-11 | Semi-Photonics Co., Ltd. | Lead frame for a two-pin light emitting diode device |
TW200845423A (en) * | 2006-12-04 | 2008-11-16 | Alps Electric Co Ltd | Light emitting device and projector |
USD594827S1 (en) | 2006-12-07 | 2009-06-23 | Cree, Inc. | Lamp package |
JP2008172125A (en) | 2007-01-15 | 2008-07-24 | Citizen Electronics Co Ltd | Chip type led light-emitting device and its manufacturing method |
TW200843130A (en) | 2007-04-17 | 2008-11-01 | Wen Lin | Package structure of a surface-mount high-power light emitting diode chip and method of making the same |
KR100901618B1 (en) | 2007-04-19 | 2009-06-08 | 엘지이노텍 주식회사 | Light emitting diode package and manufacturing method thereof |
US20080258130A1 (en) | 2007-04-23 | 2008-10-23 | Bergmann Michael J | Beveled LED Chip with Transparent Substrate |
USD573114S1 (en) | 2007-05-04 | 2008-07-15 | Samsung Electro-Mechanics Co., Ltd. | Light-emitting diode |
EP2147244B1 (en) | 2007-05-07 | 2015-12-02 | Koninklijke Philips N.V. | Led-based lighting fixtures for surface illumination with improved heat dissipation and manufacturability |
JP4341693B2 (en) | 2007-05-16 | 2009-10-07 | ウシオ電機株式会社 | LED element and manufacturing method thereof |
US8436371B2 (en) | 2007-05-24 | 2013-05-07 | Cree, Inc. | Microscale optoelectronic device packages |
US7566159B2 (en) | 2007-05-31 | 2009-07-28 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Side-emitting LED package with improved heat dissipation |
US20090008662A1 (en) | 2007-07-05 | 2009-01-08 | Ian Ashdown | Lighting device package |
US8354992B2 (en) | 2007-07-13 | 2013-01-15 | Tte Indianapolis | Appearance improvement for zone backlit LCD displays |
USD580891S1 (en) | 2007-07-20 | 2008-11-18 | Alti-Electronics Co. Ltd. | Light emitting diode |
KR20100051669A (en) | 2007-07-23 | 2010-05-17 | 디에스엠 아이피 어셋츠 비.브이. | Plastic component for lighting systems |
TWM331086U (en) | 2007-10-17 | 2008-04-21 | Tai Sol Electronics Co Ltd | Combination of LED and heat conduction device |
USD615504S1 (en) | 2007-10-31 | 2010-05-11 | Cree, Inc. | Emitter package |
US8746943B2 (en) | 2007-11-08 | 2014-06-10 | Innovations In Optics, Inc. | LED backlighting system with closed loop control |
GB2455069B (en) * | 2007-11-16 | 2010-05-12 | Uriel Meyer Wittenberg | Improved led device |
TW200928203A (en) | 2007-12-24 | 2009-07-01 | Guei-Fang Chen | LED illuminating device capable of quickly dissipating heat and its manufacturing method |
USD597968S1 (en) | 2008-03-13 | 2009-08-11 | Rohm Co., Ltd. | Light emitting diode module |
USD597971S1 (en) | 2008-03-13 | 2009-08-11 | Rohm Co., Ltd. | Light emitting diode module |
JP2010034262A (en) * | 2008-07-29 | 2010-02-12 | Sumitomo Metal Electronics Devices Inc | Package for housing light-emitting element |
WO2010020105A1 (en) * | 2008-08-22 | 2010-02-25 | Lou Mane | Led driven by ac power directly |
USD608307S1 (en) | 2008-08-28 | 2010-01-19 | Cree, Inc. | Light emitting diode |
USD621798S1 (en) | 2008-08-29 | 2010-08-17 | Foxsemicon Integrated Technology, Inc. | Light-emitting diode substrate |
US20100059783A1 (en) | 2008-09-08 | 2010-03-11 | Harry Chandra | Light Emitting Chip Package With Metal Leads For Enhanced Heat Dissipation |
USD595675S1 (en) | 2008-09-24 | 2009-07-07 | Harvatek Corporation | Light emitting diode |
KR101533817B1 (en) | 2008-12-31 | 2015-07-09 | 서울바이오시스 주식회사 | Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same |
US7923739B2 (en) | 2009-06-05 | 2011-04-12 | Cree, Inc. | Solid state lighting device |
USD641719S1 (en) | 2009-06-05 | 2011-07-19 | Cree, Inc. | Light emitting diode |
USD648686S1 (en) | 2010-04-30 | 2011-11-15 | Cree, Inc. | Light emitting diode (LED) package |
USD621799S1 (en) | 2009-01-12 | 2010-08-17 | Cree, Inc. | Light emitting diode |
US8598602B2 (en) | 2009-01-12 | 2013-12-03 | Cree, Inc. | Light emitting device packages with improved heat transfer |
US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
US20100181582A1 (en) | 2009-01-22 | 2010-07-22 | Intematix Corporation | Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof |
JP4640514B2 (en) * | 2009-02-27 | 2011-03-02 | 東芝ライテック株式会社 | Light emitting module |
CN102450103A (en) * | 2009-05-28 | 2012-05-09 | Lynk实验室公司 | Multi-voltage and multi-brightness led lighting devices and methods of using same |
USD648687S1 (en) | 2009-06-05 | 2011-11-15 | Cree, Inc. | Light emitting device package |
US8860043B2 (en) | 2009-06-05 | 2014-10-14 | Cree, Inc. | Light emitting device packages, systems and methods |
US9111778B2 (en) | 2009-06-05 | 2015-08-18 | Cree, Inc. | Light emitting diode (LED) devices, systems, and methods |
US8476812B2 (en) | 2009-07-07 | 2013-07-02 | Cree, Inc. | Solid state lighting device with improved heatsink |
US7932532B2 (en) | 2009-08-04 | 2011-04-26 | Cree, Inc. | Solid state lighting device with improved heatsink |
USD634716S1 (en) | 2009-08-06 | 2011-03-22 | Toshiba Lighting & Technology Corporation | Light emitting diode illumination device |
USD632659S1 (en) | 2009-11-11 | 2011-02-15 | Everlight Electronics Co., Ltd. | Light emitting diode lamp |
USD627310S1 (en) | 2009-11-27 | 2010-11-16 | Lite-On Technology Corp. | Package of a light emitting diode |
USD622680S1 (en) | 2009-12-04 | 2010-08-31 | Silitek Electronic (Guangzhou) Go., Ltd. | Package of a light emitting diode |
USD626095S1 (en) | 2009-12-11 | 2010-10-26 | Everlight Electronics Co., Ltd. | Light emitting diode |
USD634285S1 (en) | 2010-02-10 | 2011-03-15 | Lextar Electronics Corporation | Lead frame |
USD634286S1 (en) | 2010-02-10 | 2011-03-15 | Lextar Electronics Corporation | Lead frame |
USD634284S1 (en) | 2010-02-10 | 2011-03-15 | Lextar Electronics Corporation | Lead frame |
USD632267S1 (en) | 2010-02-12 | 2011-02-08 | Lextar Electronics Corp. | Light emitting diode packaging carrier |
USD658599S1 (en) | 2010-03-26 | 2012-05-01 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
USD628541S1 (en) | 2010-06-14 | 2010-12-07 | Everlight Electronics Co., Ltd. | Light emitting diode |
US8648359B2 (en) | 2010-06-28 | 2014-02-11 | Cree, Inc. | Light emitting devices and methods |
US8269244B2 (en) | 2010-06-28 | 2012-09-18 | Cree, Inc. | LED package with efficient, isolated thermal path |
USD643819S1 (en) | 2010-07-16 | 2011-08-23 | Cree, Inc. | Package for light emitting diode (LED) lighting |
USD679842S1 (en) | 2011-01-03 | 2013-04-09 | Cree, Inc. | High brightness LED package |
WO2012109225A1 (en) | 2011-02-07 | 2012-08-16 | Cree, Inc. | Components and methods for light emitting diode (led) lighting |
-
2011
- 2011-09-08 US US13/227,961 patent/US8648359B2/en active Active
- 2011-10-03 WO PCT/US2011/054560 patent/WO2012050994A2/en active Application Filing
- 2011-10-03 JP JP2013533875A patent/JP2013540362A/en active Pending
- 2011-10-03 KR KR1020127031924A patent/KR101578090B1/en active IP Right Grant
- 2011-10-03 EP EP11833129.7A patent/EP2628196B1/en active Active
- 2011-10-03 CN CN2011800292288A patent/CN102959748A/en active Pending
- 2011-10-12 TW TW100137044A patent/TWI591866B/en active
-
2014
- 2014-02-06 US US14/174,559 patent/US20140217434A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
US7253448B2 (en) * | 1999-03-15 | 2007-08-07 | Gentex Corporation | Semiconductor radiation emitter package |
US20090140271A1 (en) * | 2007-11-30 | 2009-06-04 | Wen-Jyh Sah | Light emitting unit |
US20110163683A1 (en) * | 2011-02-22 | 2011-07-07 | Quarkstar, Llc | Solid State Lamp Using Light Emitting Strips |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9123874B2 (en) | 2009-01-12 | 2015-09-01 | Cree, Inc. | Light emitting device packages with improved heat transfer |
US9111778B2 (en) | 2009-06-05 | 2015-08-18 | Cree, Inc. | Light emitting diode (LED) devices, systems, and methods |
US11101408B2 (en) | 2011-02-07 | 2021-08-24 | Creeled, Inc. | Components and methods for light emitting diode (LED) lighting |
US20130335967A1 (en) * | 2011-03-03 | 2013-12-19 | Osram Gmbh | Lighting device |
US9182100B2 (en) * | 2011-03-03 | 2015-11-10 | Osram Gmbh | Lighting device |
US20130228796A1 (en) * | 2012-03-02 | 2013-09-05 | Cree, Inc. | High voltage semiconductor devices including electric arc suppression material and methods of forming the same |
US9343383B2 (en) * | 2012-03-02 | 2016-05-17 | Cree, Inc. | High voltage semiconductor devices including electric arc suppression material and methods of forming the same |
US20130270588A1 (en) * | 2012-04-11 | 2013-10-17 | Lite-On Technology Corp. | Lead frame assembly, led package and led light bar |
US8933481B2 (en) * | 2012-04-11 | 2015-01-13 | Lite-On Electronics (Guangzhou) Limited | Lead frame assembly, LED package and LED light bar |
Also Published As
Publication number | Publication date |
---|---|
CN102959748A (en) | 2013-03-06 |
JP2013540362A (en) | 2013-10-31 |
WO2012050994A3 (en) | 2012-07-05 |
US20120127720A1 (en) | 2012-05-24 |
WO2012050994A2 (en) | 2012-04-19 |
KR20130023269A (en) | 2013-03-07 |
KR101578090B1 (en) | 2015-12-16 |
TWI591866B (en) | 2017-07-11 |
EP2628196A4 (en) | 2016-08-24 |
US8648359B2 (en) | 2014-02-11 |
EP2628196B1 (en) | 2021-04-07 |
EP2628196A2 (en) | 2013-08-21 |
TW201222902A (en) | 2012-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8648359B2 (en) | Light emitting devices and methods | |
US8866166B2 (en) | Solid state lighting device | |
US9300062B2 (en) | Attachment devices and methods for light emitting devices | |
US10431567B2 (en) | White ceramic LED package | |
US9076940B2 (en) | Solid state lighting component | |
US9722158B2 (en) | Aligned multiple emitter package | |
US8564000B2 (en) | Light emitting devices for light emitting diodes (LEDs) | |
US8901583B2 (en) | Surface mount device thin package | |
US9583681B2 (en) | Light emitter device packages, modules and methods |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |