US20130321969A1 - Integrated micro-plasma limiter - Google Patents
Integrated micro-plasma limiter Download PDFInfo
- Publication number
- US20130321969A1 US20130321969A1 US13/865,921 US201313865921A US2013321969A1 US 20130321969 A1 US20130321969 A1 US 20130321969A1 US 201313865921 A US201313865921 A US 201313865921A US 2013321969 A1 US2013321969 A1 US 2013321969A1
- Authority
- US
- United States
- Prior art keywords
- signal
- substrate
- trigger
- plasma
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T4/00—Overvoltage arresters using spark gaps
- H01T4/16—Overvoltage arresters using spark gaps having a plurality of gaps arranged in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/14—Auxiliary devices for switching or interrupting by electric discharge devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
- H03G11/002—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general without controlling loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
- H03G11/004—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general using discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- This invention relates generally to a plasma power limiter and, more particularly, to a plasma power limiter that is monolithically fabricated using wafer-level processing so as to be integrated on the same wafer as other circuits.
- a cover wafer is mounted to the substrate wafer using a bonding ring so as to provide a hermetically sealed cavity in which the integrated circuit is provided.
- many integrated circuits are formed on the substrate wafer and covered by a single cover wafer, where each integrated circuit is surrounded by a separate bonding ring.
- the cover wafer and the substrate are then diced between the bonding rings to separate the packages for each separate integrated circuit.
- the dicing process typically requires the use of a saw that cuts the cover wafer between the packages, where a portion of the cover wafer is removed.
- the substrate wafer is then cut between the packages.
- Integrated circuits can be susceptible to high intensity or high power signals, such as electromagnetic pulses (EMP), whether they be unintended random signals or intentional hostile signals.
- EMP electromagnetic pulses
- high performance electronic circuits used in many receivers may be sensitive to high power input signals.
- LNA low noise amplifiers
- LNA low noise amplifiers
- a typical plasma power limiter will include a sealed cavity in which is encapsulated a suitable ionizable gas, such as argon, that when ionized becomes a plasma and allows electrical current to propagate therethrough. If the incoming signal is of a high enough intensity where the gas is ionized, current generated by the signal can be directed through the plasma to a sinking electrode, where it can harmlessly be sent to a ground potential.
- a suitable ionizable gas such as argon
- Known plasma power limiters are typically separate bulky devices provided at the front end of the receiver or other circuit that cause significant signal loss before the signal can be amplified for further processing. Therefore, for some applications the design of the specific circuit would not allow for such a power limiter to be incorporated.
- FIG. 1 is a schematic diagram of a front end of a receiver
- FIG. 2 is a cross-sectional view of a wafer-level integrated plasma limiter including vertical probe tips that can be used in the circuit shown in FIG. 1 ;
- FIG. 3 is a cross-sectional view of a wafer-level integrated plasma limiter including a vertical probe tip
- FIG. 4 is a block diagram of a plasma power limiter circuit including a plurality of cascaded plasma limiters.
- FIG. 1 is a simple schematic block diagram of a front end of a receiver 10 that could have many applications, such as wireless communication applications.
- the receiver 10 is intended to represent any receiver operated at any desirable frequency and being responsive to signals from any suitable source.
- the receiver 10 includes an antenna 12 that receives the signals to be processed by the receiver 10 .
- the antenna 12 can be any antenna suitable for the purposes discussed herein and can have different configurations for the particular frequency band of interest, as would be well understood by those skilled in the art.
- Signals received by the antenna 12 are first sent to a plasma power limiter 14 that protects sensitive electronics in the receiver circuit 10 , as will be discussed in detail below.
- the plasma limiter 14 is a monolithic integrated circuit formed on the same wafer as other electrical circuits in the receiver 10 using wafer-level packaging so that the plasma limiter 14 is fabricated during and using the same fabrication steps that fabricate those circuits on the wafer.
- the frequency down-converter 18 includes a local oscillator (LO) 30 , a mixer 22 , an amplifier 24 , a band-pass filter (BPF) 26 and a synthesizer 32 .
- LO local oscillator
- BPF band-pass filter
- the amplified signal from the LNA 16 is sent to the mixer 22 along with a tuned LO signal provided by the LO 30 and tuned to the desired frequency by the synthesizer 32 to down-convert the higher frequency received signal to the IF frequency.
- the IF signal is band-pass limited by the BPF 26 to a particular frequency band, where the combination of the mixer 22 and the BPF 26 provide the desired frequency control of the IF signal during the down-conversion process.
- the band-pass filtered IF signal from the BPF 26 is sent to an analog-to-digital converter (ADC) 40 that converts the analog signal to a digital signal for subsequent processing at the back-end of the receiver circuit 10 , where the ADC 40 receives the tuned LO signal from the synthesizer 32 as a timing signal.
- ADC analog-to-digital converter
- FIG. 2 is a cross-sectional view of a plasma power limiter 50 that can be used as the plasma limiter 14 in the receiver 10 .
- the plasma limiter 50 includes a substrate wafer 52 and a cover wafer 54 that are sealed by a bonding layer 56 to define a hermitically sealed cavity 58 between the wafers 52 and 54 in a manner that is well understood by those skilled in the art.
- the wafers 52 and 54 can be any suitable semiconductor wafer, such as group III-V semiconductors, silicon, etc.
- the cover wafer 54 can be silicon and the substrate wafer 52 can be InP, SiC or GaAs.
- the bonding layer 56 can be any suitable combination of layers and materials to provide the hermetically sealed cavity 58 , such as a gold layer 60 provided on the substrate wafer 52 and a gold layer 62 provided on the cover wafer 54 , where a low temperature bonding process is employed to bond the layers 60 and 62 to form the bonding layer 56 in a process well understood by those skilled in the art.
- a perimeter section 64 of the cover wafer 54 provides the dimension to define the size of the cavity 58 in a manner also well understood by those skilled in the art.
- the wafers 52 and 54 are placed in a chamber, and a suitable ionizable gas, such as an inert gas, for example, argon, is provided in the chamber so that it is sealed within the cavity 58 .
- a suitable ionizable gas such as an inert gas, for example, argon
- the cover wafer 54 is micro-machined to form a series of vertical probe tips 70 , also referred to herein as plasma triggers.
- the probe tips 70 are formed so that when the wafers 52 and 54 are bonded together, the probe tips 70 extend towards the substrate wafer 52 a controlled distance for reasons that will become apparent from the discussion below.
- a metallic coating or layer 72 is deposited on the cover wafer 54 to provide an electrically conductive path for sinking the high powered signals, and to prolong the life of the probe tips 70 that receive the concentrated electrical signal when the plasma is generated by ionization of the gas in the sealed cavity 58 .
- the metallic layer 72 can be any suitable conductive material, such as aluminum, copper, tungsten, nickel, refractory metals, etc.
- the substrate wafer 52 Prior to the wafers 52 and 54 being sealed together, the substrate wafer 52 is fabricated to form vias 80 through the wafer 52 , which are then metalized by a suitable via metal 82 , such as copper.
- a suitable via metal 82 such as copper.
- One or more microstrip lines 84 are deposited on a surface of the substrate 52 that will face the cavity 58 , where the microstrip lines 84 are electrically coupled to the via metals 82 .
- the microstrip line 84 is sized and dimensioned for the particular frequency of the receiver 10 or other architecture in which the limiter 50 will be employed so that the microstrip line 84 has low impedance for the signal propagating along the line 84 .
- An input signal line 86 is deposited on a bottom surface of the substrate wafer 52 opposite to the cavity 58 and is directly coupled to the antenna 12 .
- An output signal line 88 also deposited on the bottom surface of the substrate wafer 52 opposite to the cavity 58 is electrically coupled to the output via metal 82 on the side of the wafer 52 opposite to the cavity 58 so that it receives the signal propagating through a microstrip line 84 .
- those signals received by the antenna 12 that are at a low enough intensity so as to not ionize the gas within the cavity 58 propagate directly through the limiter 50 along the microstrip line 84 as described with little or no loss. If the intensity or power of the received signal is high enough to ionize the gas within the cavity 58 , which is designed to be at a lower potential than could damage the front-end components in the receiver 10 , propagation of the high intensity signal along the microstrip line 84 will ionize the gas within the cavity 58 , which generates a plasma that is conductive and allows current flow from the line 84 to the probe tips 70 .
- the metallic layer 72 is electrically coupled to a ground or reference potential so that current received by the probe tips 70 can flow to that potential.
- the probe tips 70 provide a control architecture for determining the amount of power that the plasma limiter 50 will allow to propagate therethrough. Without the probe tips 70 , the microstrip line 84 and the metallic coating 72 would operate as parallel plates and the distance between those plates would determine whether current would conduct across the cavity 58 if the gas were ionized. By providing the probe tips 70 that extend into the cavity 58 , the probe tips 70 act as an electromagnetic field concentrator and the distance between the probe tips 70 and the microstrip line 84 determines how easily current will flow from the microstrip line 84 to the metallic coating 72 when the gas is ionized. The distance between the probe tips 70 and the microstrip line 84 and the gas used are thus designed to set what power level the plasma limiter 50 is to be activated.
- the metallic layer 72 is selected not only for its current carrying properties, but also for its ability to withstand the arcing environment generated by the plasma for longevity purposes.
- the plasma limiter 50 offers one design that is applicable to sink current using an ionizable gas in a wafer-level processing configuration.
- the location, orientation, size, etc. of the plasma triggers can be changed for different fabrication techniques within the scope of the present invention.
- FIG. 3 is a cross-sectional view of a plasma power limiter 100 having a different design than the plasma limiter 50 , but which operates under the same principle.
- the plasma limiter 100 is shown prior to being “flipped” for mounting purposes, where the wafer that includes the plasma trigger is at the bottom and is referred to as a trigger substrate 102 and the wafer that includes the signal line is at the top and is referred to as a signal substrate 104 .
- the substrates 102 and 104 are sealed by a bonding layer 106 that includes gold layers 108 and 110 in the same manner as discussed above to define a hermetically sealed cavity 112 including the ionizable gas.
- the signal received by the antenna 12 is sent to an input via 114 extending through the substrate 104 and exits the cavity 112 through an output via 116 extending through the substrate 104 , where the vias 114 and 116 are electrically coupled by a microstrip line 118 in the cavity 112 .
- the microstrip line 118 can be any suitable metal for the purposes described herein.
- An insulating layer 120 such as silicon nitride, is deposited on the surface of the signal substrate 104 facing the cavity 112 and provides electrical isolation for the microstrip line 118
- an insulating layer 134 such as silicon nitride, is deposited on the surface of the trigger substrate 102 facing the cavity 112 .
- the trigger substrate 102 includes a plasma trigger 122 having a metalized coating 124 that is electrically coupled to an electrode 126 .
- a plasma trigger 122 having a metalized coating 124 that is electrically coupled to an electrode 126 .
- the limiter 100 can sink that current flow in any suitable manner for the particular device.
- the electrode 126 can be electrically coupled to a metal via 128 extending through the trigger substrate 102 that would be electrically coupled to a ground potential.
- the electrode 126 can be electrically coupled to an intra-cavity interconnect (ICIC) 130 crossing the cavity 112 and being electrically coupled to a metal output via 132 extending through the substrate 104 .
- IIC intra-cavity interconnect
- the electrode 126 can be spaced a distance from a ring surrounding the plasma trigger 122 where ionization of the gas allows the current to travel across the gap between the electrode 126 and the ring, and be removed from the plasma limiter 100 .
- a plurality of the plasma power limiters can be cascaded in series where each plasma limiter may or may not be designed for a different power level to provide further protection for the circuitry behind the plasma limiters. For example, if a high intensity signal is received by the plasma limiter, where the gas is ionized and current is sinked to ground, some of the current still may flow out of the plasma limiter on the output signal line and still be at high power. Another plasma limiter that receives that signal could provide further protection. Additionally, the cascaded plasma limiters could be designed to be activated at different voltage thresholds so that the monolithically integrated circuit that included the plasma limiters could be provided for a variety of different applications.
- FIG. 4 is provided to illustrate cascaded plasma power limiters, as discussed.
- FIG. 4 is a block diagram of a plasma power limiter circuit 140 including a plurality of series connected plasma power limiters 142 .
- the plasma limiters 142 can be any plasma power limiter consistent with the discussion herein, such as the plasma power limiters 50 and 100 .
- the plasma limiters 142 can be the same design or different designs and can have the same or different activation thresholds, where the plasma triggers could be spaced at different distances from the signal line in each of the plasma limiters 142 . Further the number and type of plasma triggers in each of the plasma limiters 142 could be the same or different to provide the same or different activation thresholds.
Abstract
Description
- This application claims the benefit of the filing date of provisional application Ser. No. 61/653,840 titled, Integrated Micro-Plasma Limiter, filed May 31, 2012.
- 1. Field
- This invention relates generally to a plasma power limiter and, more particularly, to a plasma power limiter that is monolithically fabricated using wafer-level processing so as to be integrated on the same wafer as other circuits.
- 2. Discussion of the Art
- It is known in the art to provide wafer-level packaging for integrated circuits, such as monolithic millimeter-wave integrated circuits (MMIC), formed on substrate wafers. In one wafer-level packaging design, a cover wafer is mounted to the substrate wafer using a bonding ring so as to provide a hermetically sealed cavity in which the integrated circuit is provided. Typically, many integrated circuits are formed on the substrate wafer and covered by a single cover wafer, where each integrated circuit is surrounded by a separate bonding ring. The cover wafer and the substrate are then diced between the bonding rings to separate the packages for each separate integrated circuit. The dicing process typically requires the use of a saw that cuts the cover wafer between the packages, where a portion of the cover wafer is removed. The substrate wafer is then cut between the packages.
- Integrated circuits can be susceptible to high intensity or high power signals, such as electromagnetic pulses (EMP), whether they be unintended random signals or intentional hostile signals. For example, high performance electronic circuits used in many receivers may be sensitive to high power input signals. Particularly, low noise amplifiers (LNA) provided immediately behind the antenna at the front end of a receiver can be destroyed if the antenna receives a high intensity power signal, where the power susceptibility of the LNA becomes more sensitive to incoming power as the frequency and noise performance of the receiver increases.
- In order to address this concern related to the damaging effects of high power signals, plasma power limiters have been developed in the art that are provided at the front end of these types of circuits. A typical plasma power limiter will include a sealed cavity in which is encapsulated a suitable ionizable gas, such as argon, that when ionized becomes a plasma and allows electrical current to propagate therethrough. If the incoming signal is of a high enough intensity where the gas is ionized, current generated by the signal can be directed through the plasma to a sinking electrode, where it can harmlessly be sent to a ground potential.
- Known plasma power limiters are typically separate bulky devices provided at the front end of the receiver or other circuit that cause significant signal loss before the signal can be amplified for further processing. Therefore, for some applications the design of the specific circuit would not allow for such a power limiter to be incorporated.
-
FIG. 1 is a schematic diagram of a front end of a receiver; -
FIG. 2 is a cross-sectional view of a wafer-level integrated plasma limiter including vertical probe tips that can be used in the circuit shown inFIG. 1 ; -
FIG. 3 is a cross-sectional view of a wafer-level integrated plasma limiter including a vertical probe tip; and -
FIG. 4 is a block diagram of a plasma power limiter circuit including a plurality of cascaded plasma limiters. - The following discussion of the embodiments of the invention directed to an integrated wafer-level plasma power limiter is merely exemplary in nature, and is in no way intended to limit the invention or its applications or uses. For example, the discussion herein is directed to the plasma limiter being employed in the front end of a receiver. However, as will be appreciated by those skilled in the art, the plasma power limiter discussed herein can be used in any suitable circuit that includes electronics that could be damaged by high intensity signals.
-
FIG. 1 is a simple schematic block diagram of a front end of areceiver 10 that could have many applications, such as wireless communication applications. Thereceiver 10 is intended to represent any receiver operated at any desirable frequency and being responsive to signals from any suitable source. Thereceiver 10 includes anantenna 12 that receives the signals to be processed by thereceiver 10. Theantenna 12 can be any antenna suitable for the purposes discussed herein and can have different configurations for the particular frequency band of interest, as would be well understood by those skilled in the art. Signals received by theantenna 12 are first sent to aplasma power limiter 14 that protects sensitive electronics in thereceiver circuit 10, as will be discussed in detail below. Theplasma limiter 14 is a monolithic integrated circuit formed on the same wafer as other electrical circuits in thereceiver 10 using wafer-level packaging so that theplasma limiter 14 is fabricated during and using the same fabrication steps that fabricate those circuits on the wafer. - Signals that are below a threshold power intensity are passed directly through the
plasma limiter 14 and received by an LNA 16 that amplifies the signals from theantenna 12 to a desired signal level for subsequent processing. The amplified signal is then sent to a frequency down-converter 18 that converts the high frequency received signal to an intermediate frequency (IF) signal suitable to be effectively converted to a digital signal. The frequency down-converter 18 includes a local oscillator (LO) 30, a mixer 22, an amplifier 24, a band-pass filter (BPF) 26 and asynthesizer 32. The amplified signal from the LNA 16 is sent to the mixer 22 along with a tuned LO signal provided by the LO 30 and tuned to the desired frequency by thesynthesizer 32 to down-convert the higher frequency received signal to the IF frequency. The IF signal is band-pass limited by the BPF 26 to a particular frequency band, where the combination of the mixer 22 and the BPF 26 provide the desired frequency control of the IF signal during the down-conversion process. The band-pass filtered IF signal from the BPF 26 is sent to an analog-to-digital converter (ADC) 40 that converts the analog signal to a digital signal for subsequent processing at the back-end of thereceiver circuit 10, where theADC 40 receives the tuned LO signal from thesynthesizer 32 as a timing signal. -
FIG. 2 is a cross-sectional view of a plasma power limiter 50 that can be used as theplasma limiter 14 in thereceiver 10. Although the power limiter 50 has particular application for thereceiver 10, this is by way of a non-limiting example in that the power limiter 50 can be used in any circuit where high intensity or high power signals may damage other circuits, including transmitter circuits. The plasma limiter 50 includes asubstrate wafer 52 and acover wafer 54 that are sealed by abonding layer 56 to define a hermitically sealedcavity 58 between thewafers wafers cover wafer 54 can be silicon and thesubstrate wafer 52 can be InP, SiC or GaAs. Thebonding layer 56 can be any suitable combination of layers and materials to provide the hermetically sealedcavity 58, such as a gold layer 60 provided on thesubstrate wafer 52 and a gold layer 62 provided on thecover wafer 54, where a low temperature bonding process is employed to bond the layers 60 and 62 to form thebonding layer 56 in a process well understood by those skilled in the art. A perimeter section 64 of thecover wafer 54 provides the dimension to define the size of thecavity 58 in a manner also well understood by those skilled in the art. - During the sealing process to provide the
cavity 58, thewafers cavity 58. Further, prior to thecover wafer 54 being sealed to thesubstrate wafer 52, thecover wafer 54 is micro-machined to form a series ofvertical probe tips 70, also referred to herein as plasma triggers. Theprobe tips 70 are formed so that when thewafers probe tips 70 extend towards the substrate wafer 52 a controlled distance for reasons that will become apparent from the discussion below. Further, prior to thewafers layer 72 is deposited on thecover wafer 54 to provide an electrically conductive path for sinking the high powered signals, and to prolong the life of theprobe tips 70 that receive the concentrated electrical signal when the plasma is generated by ionization of the gas in the sealedcavity 58. Themetallic layer 72 can be any suitable conductive material, such as aluminum, copper, tungsten, nickel, refractory metals, etc. - Prior to the
wafers substrate wafer 52 is fabricated to formvias 80 through thewafer 52, which are then metalized by a suitable viametal 82, such as copper. One ormore microstrip lines 84 are deposited on a surface of thesubstrate 52 that will face thecavity 58, where themicrostrip lines 84 are electrically coupled to thevia metals 82. Themicrostrip line 84 is sized and dimensioned for the particular frequency of thereceiver 10 or other architecture in which the limiter 50 will be employed so that themicrostrip line 84 has low impedance for the signal propagating along theline 84. Aninput signal line 86 is deposited on a bottom surface of thesubstrate wafer 52 opposite to thecavity 58 and is directly coupled to theantenna 12. An output signal line 88 also deposited on the bottom surface of thesubstrate wafer 52 opposite to thecavity 58 is electrically coupled to the output viametal 82 on the side of thewafer 52 opposite to thecavity 58 so that it receives the signal propagating through amicrostrip line 84. - During operation of the limiter 50, those signals received by the
antenna 12 that are at a low enough intensity so as to not ionize the gas within thecavity 58 propagate directly through the limiter 50 along themicrostrip line 84 as described with little or no loss. If the intensity or power of the received signal is high enough to ionize the gas within thecavity 58, which is designed to be at a lower potential than could damage the front-end components in thereceiver 10, propagation of the high intensity signal along themicrostrip line 84 will ionize the gas within thecavity 58, which generates a plasma that is conductive and allows current flow from theline 84 to theprobe tips 70. Once the gas in thecavity 58 is ionized to generate a conductive path across thecavity 58, the power of the signal still needs to be above some threshold, which is related to how much of the gas is ionized, to provide the current flow through the gas, which is based on various factors discussed in more detail below. Themetallic layer 72 is electrically coupled to a ground or reference potential so that current received by theprobe tips 70 can flow to that potential. - The
probe tips 70 provide a control architecture for determining the amount of power that the plasma limiter 50 will allow to propagate therethrough. Without theprobe tips 70, themicrostrip line 84 and themetallic coating 72 would operate as parallel plates and the distance between those plates would determine whether current would conduct across thecavity 58 if the gas were ionized. By providing theprobe tips 70 that extend into thecavity 58, theprobe tips 70 act as an electromagnetic field concentrator and the distance between theprobe tips 70 and themicrostrip line 84 determines how easily current will flow from themicrostrip line 84 to themetallic coating 72 when the gas is ionized. The distance between theprobe tips 70 and themicrostrip line 84 and the gas used are thus designed to set what power level the plasma limiter 50 is to be activated. Further, other criteria go into the design of when the plasma limiter 50 is activated, including the number ofprobe tips 70, the material of themetallic layer 72, the space betweenprobe tips 70, etc. Themetallic layer 72 is selected not only for its current carrying properties, but also for its ability to withstand the arcing environment generated by the plasma for longevity purposes. - The plasma limiter 50 offers one design that is applicable to sink current using an ionizable gas in a wafer-level processing configuration. The location, orientation, size, etc. of the plasma triggers can be changed for different fabrication techniques within the scope of the present invention.
-
FIG. 3 is a cross-sectional view of aplasma power limiter 100 having a different design than the plasma limiter 50, but which operates under the same principle. Theplasma limiter 100 is shown prior to being “flipped” for mounting purposes, where the wafer that includes the plasma trigger is at the bottom and is referred to as atrigger substrate 102 and the wafer that includes the signal line is at the top and is referred to as asignal substrate 104. Thesubstrates bonding layer 106 that includes gold layers 108 and 110 in the same manner as discussed above to define a hermetically sealedcavity 112 including the ionizable gas. The signal received by theantenna 12 is sent to an input via 114 extending through thesubstrate 104 and exits thecavity 112 through an output via 116 extending through thesubstrate 104, where thevias microstrip line 118 in thecavity 112. Themicrostrip line 118 can be any suitable metal for the purposes described herein. An insulatinglayer 120, such as silicon nitride, is deposited on the surface of thesignal substrate 104 facing thecavity 112 and provides electrical isolation for themicrostrip line 118, and an insulatinglayer 134, such as silicon nitride, is deposited on the surface of thetrigger substrate 102 facing thecavity 112. - The
trigger substrate 102 includes aplasma trigger 122 having a metalizedcoating 124 that is electrically coupled to anelectrode 126. When the gas in thecavity 112 is ionized and generates a plasma as a result of a high power signal propagating on themircrostrip line 118, current flow across thecavity 112 is received by theplasma trigger 122 consistent with the discussion herein. Thelimiter 100 can sink that current flow in any suitable manner for the particular device. For example, theelectrode 126 can be electrically coupled to a metal via 128 extending through thetrigger substrate 102 that would be electrically coupled to a ground potential. Alternately, theelectrode 126 can be electrically coupled to an intra-cavity interconnect (ICIC) 130 crossing thecavity 112 and being electrically coupled to a metal output via 132 extending through thesubstrate 104. - Although not specifically shown, it is also possible to provide electrodes or other top metals on the insulating
layer 120 electrically isolated from themicrostrip line 18 that can receive the current generated by the ionization of the gas, where that current flow could be directed to the via 132 or through theICIC 130 and thevia 128. In yet another embodiment, theelectrode 126 can be spaced a distance from a ring surrounding theplasma trigger 122 where ionization of the gas allows the current to travel across the gap between theelectrode 126 and the ring, and be removed from theplasma limiter 100. - A plurality of the plasma power limiters can be cascaded in series where each plasma limiter may or may not be designed for a different power level to provide further protection for the circuitry behind the plasma limiters. For example, if a high intensity signal is received by the plasma limiter, where the gas is ionized and current is sinked to ground, some of the current still may flow out of the plasma limiter on the output signal line and still be at high power. Another plasma limiter that receives that signal could provide further protection. Additionally, the cascaded plasma limiters could be designed to be activated at different voltage thresholds so that the monolithically integrated circuit that included the plasma limiters could be provided for a variety of different applications.
-
FIG. 4 is provided to illustrate cascaded plasma power limiters, as discussed.FIG. 4 is a block diagram of a plasmapower limiter circuit 140 including a plurality of series connectedplasma power limiters 142. Theplasma limiters 142 can be any plasma power limiter consistent with the discussion herein, such as theplasma power limiters 50 and 100. Theplasma limiters 142 can be the same design or different designs and can have the same or different activation thresholds, where the plasma triggers could be spaced at different distances from the signal line in each of theplasma limiters 142. Further the number and type of plasma triggers in each of theplasma limiters 142 could be the same or different to provide the same or different activation thresholds. - The foregoing discussion disclosed and describes merely exemplary embodiments of the present invention. One skilled in the art will readily recognize from such discussion and from the accompanying drawings and claims that various changes, modifications and variations can be made therein without departing from the spirit and scope of the invention as defined in the following claims.
Claims (20)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/865,921 US9054500B2 (en) | 2012-05-31 | 2013-04-18 | Integrated micro-plasma limiter |
EP13727677.0A EP2856643B1 (en) | 2012-05-31 | 2013-04-26 | Integrated micro-plasma limiter |
JP2015515005A JP6049869B2 (en) | 2012-05-31 | 2013-04-26 | Integrated microplasma limiter |
PCT/US2013/038523 WO2013180869A1 (en) | 2012-05-31 | 2013-04-26 | Integrated micro-plasma limiter |
TW102116695A TWI535103B (en) | 2012-05-31 | 2013-05-10 | Integrated micro-plasma limiter |
US14/708,838 US9774067B2 (en) | 2012-05-31 | 2015-05-11 | Low power threshold integrated micro-plasma limiter |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261653840P | 2012-05-31 | 2012-05-31 | |
US13/865,921 US9054500B2 (en) | 2012-05-31 | 2013-04-18 | Integrated micro-plasma limiter |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/708,838 Continuation-In-Part US9774067B2 (en) | 2012-05-31 | 2015-05-11 | Low power threshold integrated micro-plasma limiter |
Publications (2)
Publication Number | Publication Date |
---|---|
US20130321969A1 true US20130321969A1 (en) | 2013-12-05 |
US9054500B2 US9054500B2 (en) | 2015-06-09 |
Family
ID=49669970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/865,921 Active 2033-12-04 US9054500B2 (en) | 2012-05-31 | 2013-04-18 | Integrated micro-plasma limiter |
Country Status (5)
Country | Link |
---|---|
US (1) | US9054500B2 (en) |
EP (1) | EP2856643B1 (en) |
JP (1) | JP6049869B2 (en) |
TW (1) | TWI535103B (en) |
WO (1) | WO2013180869A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190319349A1 (en) * | 2018-04-13 | 2019-10-17 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Hermetically sealed module unit with integrated antennas |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10897130B2 (en) * | 2018-03-30 | 2021-01-19 | The Boeing Company | Micro plasma limiter for RF and microwave circuit protection |
CN113948834B (en) * | 2021-10-18 | 2022-10-11 | 中国人民解放军国防科技大学 | Branch type circular waveguide high-power microwave antenna switch |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3439230A (en) * | 1965-08-25 | 1969-04-15 | Sprague Electric Co | Electrolytic capacitor and filter network |
US3754811A (en) * | 1971-12-13 | 1973-08-28 | Eastman Kodak Co | Projection screen |
US3775642A (en) * | 1971-01-25 | 1973-11-27 | Siemens Ag | Gas discharge excess voltage arrester |
US4433354A (en) * | 1981-01-14 | 1984-02-21 | Siemens Aktiengesellschaft | Gas-discharge surge arrester |
US5856211A (en) * | 1996-04-10 | 1999-01-05 | Donnelly Corporation | Method for filling the cavities of cells with a chromogenic fluid |
US6026763A (en) * | 1997-03-31 | 2000-02-22 | Samsung Electronics Co., Ltd. | Thin-film deposition apparatus using cathodic arc discharge |
US20020116818A1 (en) * | 2001-02-27 | 2002-08-29 | Illinois Valley Holding Company | Apparatus and method for manufacturing monolithic cross flow particulate traps |
US20040164946A1 (en) * | 2003-02-21 | 2004-08-26 | Cavanaugh Shanti A. | Thermal control system for liquid crystal cell |
US20060209485A1 (en) * | 2003-04-10 | 2006-09-21 | Okaya Electric Industries Co., Ltd. | Discharge tube and surge absorbing device |
US20090026627A1 (en) * | 2007-07-24 | 2009-01-29 | Northrop Grumman Space & Mission Systems Corp. | Support Structures for On-Wafer Testing of Wafer-Level Packages and Multiple Wafer Stacked Structures |
US20090029554A1 (en) * | 2007-07-25 | 2009-01-29 | Northrop Grumman Space & Mission Systems Corp. | Method of Batch Integration of Low Dielectric Substrates with MMICs |
US20090026598A1 (en) * | 2007-07-24 | 2009-01-29 | Northrop Grumman Space & Mission Systems Corp. | Wafer Level Packaging Integrated Hydrogen Getter |
US20110043742A1 (en) * | 2003-02-21 | 2011-02-24 | Cavanaugh Shanti A | Contamination prevention in liquid crystal cells |
US8169145B2 (en) * | 2005-08-02 | 2012-05-01 | Epcos Ag | Spark-discharge gap for power system protection device |
US20120256233A1 (en) * | 2011-04-11 | 2012-10-11 | University Of Central Florida Research Foundation, Inc. | Electrostatic discharge shunting circuit |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4891730A (en) * | 1989-05-10 | 1990-01-02 | The United States Of America As Represented By The Secretary Of The Army | Monolithic microwave integrated circuit terminal protection device |
US5900062A (en) | 1995-12-28 | 1999-05-04 | Applied Materials, Inc. | Lift pin for dechucking substrates |
US6353290B1 (en) | 1996-03-06 | 2002-03-05 | The United States Of America As Represented By The Secretary Of The Army | Microwave field emitter array limiter |
JP2000013994A (en) * | 1998-06-19 | 2000-01-14 | Okaya Electric Ind Co Ltd | Field electron emission type surge absorbing element |
US6586955B2 (en) | 2000-03-13 | 2003-07-01 | Tessera, Inc. | Methods and structures for electronic probing arrays |
US20040252438A1 (en) | 2002-06-13 | 2004-12-16 | Accurate Automation Corporation | Method and apparatus for a subnanosecond response time transient protection device |
US7045868B2 (en) | 2003-07-31 | 2006-05-16 | Motorola, Inc. | Wafer-level sealed microdevice having trench isolation and methods for making the same |
KR100555849B1 (en) | 2003-11-27 | 2006-03-03 | 주식회사 셈테크놀러지 | Neutral particle beam processing apparatus |
US8220318B2 (en) | 2005-06-17 | 2012-07-17 | Georgia Tech Research Corporation | Fast microscale actuators for probe microscopy |
US7637149B2 (en) | 2005-06-17 | 2009-12-29 | Georgia Tech Research Corporation | Integrated displacement sensors for probe microscopy and force spectroscopy |
US20070014069A1 (en) | 2005-06-24 | 2007-01-18 | Accurate Automation Corporation | Method and apparatus to protect an ethernet network by suppression of transient voltage pulses using a plasma limiter |
JP2007066557A (en) * | 2005-08-29 | 2007-03-15 | Murata Mfg Co Ltd | Chip type lightning arrester and its manufacturing method |
US20080165466A1 (en) | 2007-01-05 | 2008-07-10 | Luke Timothy Gritter | Method and Apparatus For Providing a Carbon Nanotube Plasma Limiter Having a Subnanosecond Response Time |
US8442091B2 (en) | 2007-10-25 | 2013-05-14 | The Board Of Trustees Of The University Of Illinois | Microchannel laser having microplasma gain media |
FR2924289B1 (en) * | 2007-11-27 | 2016-10-21 | Thales Sa | POWER SIGNAL POWER LIMITER AND POWER LIMITER DESIGN METHOD |
US8569090B2 (en) | 2010-12-03 | 2013-10-29 | Babak Taheri | Wafer level structures and methods for fabricating and packaging MEMS |
-
2013
- 2013-04-18 US US13/865,921 patent/US9054500B2/en active Active
- 2013-04-26 WO PCT/US2013/038523 patent/WO2013180869A1/en active Application Filing
- 2013-04-26 EP EP13727677.0A patent/EP2856643B1/en active Active
- 2013-04-26 JP JP2015515005A patent/JP6049869B2/en active Active
- 2013-05-10 TW TW102116695A patent/TWI535103B/en active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3439230A (en) * | 1965-08-25 | 1969-04-15 | Sprague Electric Co | Electrolytic capacitor and filter network |
US3775642A (en) * | 1971-01-25 | 1973-11-27 | Siemens Ag | Gas discharge excess voltage arrester |
US3754811A (en) * | 1971-12-13 | 1973-08-28 | Eastman Kodak Co | Projection screen |
US4433354A (en) * | 1981-01-14 | 1984-02-21 | Siemens Aktiengesellschaft | Gas-discharge surge arrester |
US5856211A (en) * | 1996-04-10 | 1999-01-05 | Donnelly Corporation | Method for filling the cavities of cells with a chromogenic fluid |
US6026763A (en) * | 1997-03-31 | 2000-02-22 | Samsung Electronics Co., Ltd. | Thin-film deposition apparatus using cathodic arc discharge |
US20020116818A1 (en) * | 2001-02-27 | 2002-08-29 | Illinois Valley Holding Company | Apparatus and method for manufacturing monolithic cross flow particulate traps |
US20040164946A1 (en) * | 2003-02-21 | 2004-08-26 | Cavanaugh Shanti A. | Thermal control system for liquid crystal cell |
US20110043742A1 (en) * | 2003-02-21 | 2011-02-24 | Cavanaugh Shanti A | Contamination prevention in liquid crystal cells |
US20060209485A1 (en) * | 2003-04-10 | 2006-09-21 | Okaya Electric Industries Co., Ltd. | Discharge tube and surge absorbing device |
US8169145B2 (en) * | 2005-08-02 | 2012-05-01 | Epcos Ag | Spark-discharge gap for power system protection device |
US20090026627A1 (en) * | 2007-07-24 | 2009-01-29 | Northrop Grumman Space & Mission Systems Corp. | Support Structures for On-Wafer Testing of Wafer-Level Packages and Multiple Wafer Stacked Structures |
US20090026598A1 (en) * | 2007-07-24 | 2009-01-29 | Northrop Grumman Space & Mission Systems Corp. | Wafer Level Packaging Integrated Hydrogen Getter |
US20090029554A1 (en) * | 2007-07-25 | 2009-01-29 | Northrop Grumman Space & Mission Systems Corp. | Method of Batch Integration of Low Dielectric Substrates with MMICs |
US20120256233A1 (en) * | 2011-04-11 | 2012-10-11 | University Of Central Florida Research Foundation, Inc. | Electrostatic discharge shunting circuit |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190319349A1 (en) * | 2018-04-13 | 2019-10-17 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Hermetically sealed module unit with integrated antennas |
US10903560B2 (en) * | 2018-04-13 | 2021-01-26 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Hermetically sealed module unit with integrated antennas |
Also Published As
Publication number | Publication date |
---|---|
TWI535103B (en) | 2016-05-21 |
JP2015520598A (en) | 2015-07-16 |
US9054500B2 (en) | 2015-06-09 |
WO2013180869A1 (en) | 2013-12-05 |
JP6049869B2 (en) | 2016-12-21 |
EP2856643B1 (en) | 2016-10-12 |
TW201411925A (en) | 2014-03-16 |
EP2856643A1 (en) | 2015-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10404226B2 (en) | Power amplifier module | |
US9209380B2 (en) | Acoustic wave device | |
US9054500B2 (en) | Integrated micro-plasma limiter | |
US11152677B2 (en) | Integration of self-biased magnetic circulators with microwave devices | |
US11496111B2 (en) | Methods of plasma dicing bulk acoustic wave components | |
CN106575957B (en) | Integrated circuit provided with a crystal acoustic resonator device | |
US9774067B2 (en) | Low power threshold integrated micro-plasma limiter | |
KR102444727B1 (en) | Acoustic wave devices, high-frequency front-end circuits and communication devices | |
JP2020065256A5 (en) | Bulk acoustic wave components and wireless communication devices | |
CN111418152B (en) | Elastic wave device, high-frequency front-end circuit, and communication device | |
US20020140525A1 (en) | Wafer-scale package for surface acoustic wave circuit and method of manufacturing the same | |
JP2006067258A (en) | Surface acoustic wave device and communication apparatus | |
CN100533968C (en) | Spring surface acoustic wave device, manufacturing method therefor, and communications equipment | |
WO2008045983A2 (en) | Microphone microchip device with internal noise suppression | |
CN110100387A (en) | Acoustic wave device, high-frequency front-end circuit and communication device | |
US20230027129A1 (en) | Acoustic wave devices with thermal bypass | |
CN111566933B (en) | Elastic wave device, high-frequency front-end circuit, communication device, and method for manufacturing elastic wave device | |
JP2015520598A5 (en) | ||
JP2007165739A (en) | Electronic device and semiconductor device | |
JP6334440B2 (en) | High-frequency receiver module | |
US20230307808A1 (en) | Microscale plasma limiter integrated into thick film interconnect | |
US10951205B2 (en) | Protection circuit against short circuits of switching device for SiC or GaN MOSFET transistor and associated method | |
JP2006128809A (en) | Acoustic surface wave element and communication apparatus | |
Yunoki et al. | Plasma half dicing based on micro-loading effect for ultra-thin LiNbO 3 plate wave devices on Si substrate | |
JPH05308121A (en) | Semiconductor integrated circuit device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: NORTHROP GRUMMAN SYSTEMS CORPORATION, VIRGINIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHANG-CHIEN, PATTY;HENNIG, KELLY JILL;ZENG, XIANGLIN;AND OTHERS;REEL/FRAME:030248/0137 Effective date: 20130417 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 8 |