US20130126956A1 - Semiconductor device including vertical transistor and method for manufacturing the same - Google Patents
Semiconductor device including vertical transistor and method for manufacturing the same Download PDFInfo
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- US20130126956A1 US20130126956A1 US13/746,274 US201313746274A US2013126956A1 US 20130126956 A1 US20130126956 A1 US 20130126956A1 US 201313746274 A US201313746274 A US 201313746274A US 2013126956 A1 US2013126956 A1 US 2013126956A1
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- 238000000034 method Methods 0.000 title abstract description 39
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000003990 capacitor Substances 0.000 claims abstract description 23
- 238000003860 storage Methods 0.000 claims abstract description 19
- 230000001681 protective effect Effects 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 2
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- 239000010937 tungsten Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
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- 238000001039 wet etching Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H01L27/108—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
Definitions
- An embodiment of the present invention relates to a semiconductor device including a vertical transistor and a method for manufacturing the same.
- a semiconductor is a material which belongs to an intermediate region of a conductor and a nonconductor according to classification of materials based on electrical conductivity.
- a semiconductor is similar to a nonconductor in a pure state, the electrical conductivity of the semiconductor changes by addition of impurities or by other manipulations.
- the semiconductor has been used to produce a semiconductor device such as a transistor by addition of impurities and connection of the conductor.
- a semiconductor apparatus refers to an apparatus having various functions performed by the semiconductor device.
- a representative example of the semiconductor apparatus is a semiconductor memory apparatus.
- a semiconductor memory apparatus comprises a plurality of unit cells each including a capacitor and a transistor.
- a double capacitor is used to store data temporarily, and a transistor is used to transfer data between a bit line and a capacitor in response to a control signal (word line) using an electrical conductivity change.
- a transistor includes three regions such as a gate, a source and a drain. In a transistor, charges between the source and the drain move in response to a control signal. The movement of charges between the source and the drain is performed through a channel region which has the property of the semiconductor.
- a gate is formed in the semiconductor substrate, and impurities are doped at both sides of the gate so as to form a source and a drain.
- a space between the source and the drain under the gate is a channel region of the transistor, A transistor having a vertical channel region occupies given area of the semiconductor substrate.
- it is difficult to reduce a unit cell area because the number of transistors included in a unit cell increases.
- a unit cell area of a semiconductor apparatus is reduced, it is possible to increase the number of net die per wafer, thereby improving productivity.
- various methods have been suggested. As one of these methods, a 3D transistor is used which includes a vertical transistor having a vertical channel region instead of a conventional planar transistor having a horizontal channel region.
- Various embodiments of the invention are directed to a semiconductor device including a vertical transistor and a method for manufacturing the same that may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps.
- a semiconductor device including a vertical transistor comprises: an active region formed in a semiconductor substrate; a bit line disposed in a lower portion of the active region; a word line buried in the active region; and a capacitor disposed on an upper portion of the active region and being coupled to the bit line via the active region.
- the semiconductor device may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2.
- the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps.
- the word line and the active region are in contact and defining a step difference, thereby maximizing a channel area.
- the surface contacting with the word line and the active region is straight-line.
- the cross-sectional shape of the word line is rectangular or oval.
- the active region has a rectangular pillar shape or a cylindrical column shape.
- the semiconductor device further comprises a storage node contact coupled between the upper portion of the active region and the lower portion of the capacitor.
- the word line is buried in the middle part of the active region or at one sidewall of the active region so that a channel is formed at one side or at both sides.
- An upper side end portion of the word line extends to a level lower than an upper side end portion of the active region, thereby maximizing the area contacting with the active region and the lower electrode of the capacitor.
- the bit line and the word line are extended in a perpendicular direction from each other.
- the semiconductor device further comprises a first insulating film disposed between the active regions, thereby insulating a space between the active regions.
- the semiconductor device further comprises a word line insulating film including an oxide film disposed between the active region and the word line.
- the bit line includes any of a metal material such as tungsten (W) or an ion-implanting region.
- the semiconductor device further comprises an second insulating film between the word line and the capacitor.
- the semiconductor device may further comprise an protective film disposed between the active region and the first insulating film, and disposed parallel with the bit line.
- a method for manufacturing a semiconductor device including a vertical transistor comprises: forming an active region in a semiconductor substrate; forming a bit line in a lower portion of the active region; forming a word line below an upper surface of the active region; and forming a capacitor over an upper portion of the active region and the word line to be coupled to the bit line via the active region.
- the method may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps. Additionally, the method reduces parasitic capacitance between the word line and the bit line.
- the forming-the-word-line-in-the-active-region includes etching the semiconductor substrate including the active region so as to have a step difference, thereby maximizing a channel area.
- the forming-the-word-line-in-the-active-region includes etching the cross-sectional view of the active region so as to have a rectangular or oval shape.
- the forming-an-active-region-in-the-semiconductor-substrate includes etching the active region so as to have a rectangular pillar shape or a cylindrical column shape.
- the method further comprises forming a storage node contact on the upper portion of the active region and the word line, thereby enhancing the electric connection between the capacitor and the active region.
- the forming-the-word-line-in-the-active-region includes: etching a middle part or one sidewall region of the active region including the bit line; and burying a word line material in the etched active region.
- the forming-the-word-line-in-the-active-region includes: etching a portion of the active region including the bit line; burying a word line material in the etched active region; and etching a portion of the buried word line material so that the upper side end portion of the word line extends to a level lower than an upper side end portion of the active region, thereby maximizing the contact area of the lower electrode and the active region of the capacitor.
- the word line is formed perpendicular to the bit line. After forming a word line in the active region, the method further comprises forming a second insulating film between the word line and the capacitor, thereby insulating a space between the active regions.
- the method further comprises depositing a first insulating film between neighboring active regions.
- the method further comprises forming a word line insulating film including an oxide film between the active region and the word line.
- the forming-a-bit-line-in-the-lower-portion-of-the-active-region includes: forming a protective film over the active region; forming an sacrificial film over the protective film; patterning the protective film and the sacrificial film between the active regions to form a first recess; patterning the lower portion of the first recess to form a bulb-like recess extended from the first recess; filling a bit line material in the bulb-type recess to form a bulb-like bit line; forming a second recess passing through the bulb-like bit line sot that the recess forms two electrically separated bit lines; and forming an insulating film in the second recess.
- FIGS. 1 and 2 are perspective views illustrating a semiconductor device including a vertical transistor according to an embodiment of the present invention.
- FIGS. 3 a to 3 q are cross-sectional views illustrating a method for manufacturing a semiconductor device including a vertical transistor according to an embodiment of the present invention.
- FIGS. 4 to 9 illustrating other embodiments of a semiconductor device including a vertical transistor according to an embodiment of the present invention
- FIG. 10 is illustrating a semiconductor device including a vertical transistor according to an embodiment of the present invention.
- FIGS. 1 and 2 are perspective views illustrating a semiconductor device including a vertical transistor according to an embodiment of the present invention.
- FIG. 2 shows the semiconductor device of FIG. 1 with a first insulating film omitted.
- a semiconductor device including a vertical transistor comprises a plurality of active regions 12 in a pillar shape and separated by a first insulating film 28 from one another.
- a word line 40 is formed penetrating the plurality of active regions 12 or extending inside of the plurality of active regions 12 to be in a buried shape.
- a word line insulating film 34 including an insulating material such as an oxide film is formed between the word line 40 and the active region 12 .
- a bottom surface of a lower electrode 50 is formed on the upper portion of the word line 40 in each active region 12 .
- a capacitor 56 including the lower electrode 50 is disposed thereon.
- a bit line 27 is extended in the lower portion of the active region 12 in a perpendicular direction of the word line 40 .
- the word line 40 is not formed outside of the active region 12 , for example, over the active region 12 . Instead, the word line 40 is formed inside of the active region 12 or formed penetrating the active region 12 , thereby reducing the cell area and also decreasing parasitic capacitance generated between the word line 40 and the bit line 27 .
- FIGS. 3 a to 3 q are cross-sectional views illustrating a method for manufacturing a semiconductor device including a vertical transistor according to an embodiment of the present invention, taken along A-A′ of FIGS. 1 and 2 .
- a protective film 14 is formed on the surface of the semiconductor substrate 10 .
- the protective film 14 includes an insulating material such as an oxide film and is formed, for example, by a physical vapor deposition (PVD) method.
- a sacrificial film 16 is formed over the entire surface of the semiconductor substrate 10 including the protective film 14 .
- the sacrificial film 16 is a material for protecting the active region 12 from a subsequent etching process.
- the sacrificial film 16 includes any of an oxide film and a nitride film.
- the sacrificial film 16 disposed between the two active regions 12 is etched until the substrate 10 is exposed to form a first recess 22 .
- the first recess 22 is required to form a bit line 27 (see FIG. 3 g ).
- the etching process for forming the first recess 22 is performed with the semiconductor substrate 10 as an etch target to remove the protective film 14 and a sacrificial film 16 located between the active regions 12 .
- a wet etching process is performed onto the first recess 22 to form a bulb-type recess 24 extended downward from the first recess 22 .
- the protective film 14 that remains at a sidewall of the first recess 22 can serve as a mask protecting a sidewall of the active region 12 from being attacked.
- bit line material 26 is deposited over the entire surface of the semiconductor substrate so that the bit line material 26 fills in the first recess 22 and the bulb-type recess 24 .
- the bit line material 26 disposed on the upper portion of the sacrificial film 16 is planarized and removed.
- FIG. 3 f shows the device after the removal step.
- the bit line material 26 includes a metal material such as tungsten W.
- the bit line can be formed not by a method of filling in a metal material into the first recess 22 and the bulb-type recess 24 but by an ion-implanting method to form an ion-implantation region in the substrate 10 .
- a region where the first recess 22 is located is re-etched until the substrate 10 is exposed to form a second recess 29 .
- the bit line material 26 in the bulb-type recess 24 is divided into two parts, each of which forms a bit line 27 .
- the second recess 29 forms a gap through the middle of bit line material 26 .
- the first insulating film 28 is deposited on the entire surface of the semiconductor substrate and fills in the second recess 29 , thereby electrically isolating the separated bit lines 27 from each other.
- bit line insulating film 28 , the protective film 14 and the active region 12 are etched along a horizontal direction (A-A′ direction of FIG. 1 ) which is perpendicular to the bit line 27 so as to form a first word line recess (not shown).
- a step-forming mask 30 is formed on the upper portion of the active region 10 and the first insulating film 28 .
- the step-forming mask 30 is formed with a photoresist film or with a hard mask including a nitride film or an amorphous carbon layer.
- the step-forming mask 30 is formed over a bit line 27 and the first insulating film 28 .
- the step-forming mask 30 is a mask for providing a step difference 32 (see FIG.
- step difference can be formed by a method other than using step-forming mask 30 in other embodiments of the present invention.
- the substrate 10 is etched by using the step-forming mask 30 as an etching mask, thereby forming a second word line recess 44 having a step difference 32 between neighboring bit lines 27 .
- FIGS. 3 j ( b ) to 3 q ( b ) is a perspective view illustrating a region ‘B’ of FIGS. 3 j ( a ) to 3 q ( a ).
- a word line insulating film 34 is deposited on the substrate 10 including the second word line recess 44 with the step difference 32 so that the substrate 10 formed of the active region 12 is not in direct contact with a word line 40 (see FIG. 3 l ).
- the word line insulating film 34 may include an oxide film.
- a word line 40 material is deposited on the entire surface of the semiconductor substrate 10 including the word line insulating film 34 .
- the word line 40 includes a metal material such as tungsten (W) or titanium (Ti) and a conductive material such as polysilicon.
- the upper portion of the word line 40 is etched by an etch-back process or planarized by a Chemical Mechanical Polishing (CMP) process so as to remove the word line 40 material located at the upper portion of the word line insulating film 34 (it is possible to further remove the word line material so that word line 40 may be formed lower than the upper portion of the word line insulating film, and an upper portion of the word line recess 44 remains empty), thereby separating neighboring word lines 40 .
- CMP Chemical Mechanical Polishing
- a second insulating film 42 including an insulating film such as an oxide film is formed on the upper portion of the word line 40 .
- a storage node insulating film 52 is deposited on the upper portion of the second insulating film 42 and the word line insulating film 34 .
- a region is etched which is reserved for a lower storage electrode 50 (see FIG. 3 q ).
- the storage node insulating film 52 is etched using the second insulating film 42 as an etch target until the surface of the second insulating film 42 is exposed (see FIG. 3 q ).
- a lower storage electrode 50 is formed over the exposed second insulating film 42 .
- a dielectric film and an upper storage electrode are formed on the upper portion of the lower electrode 50 , thereby obtaining a capacitor 56 shown in FIGS. 1 and 2 .
- the capacitor 56 may be in various kinds of structures such as a concave type, a cylinder type and a pillar type.
- the semiconductor device including a vertical transistor shown in FIGS. 1 and 2 can be formed.
- FIGS. 4 to 9 are each illustrating another example of a semiconductor device including a vertical transistor according to an embodiment of the present invention.
- the cross-sectional view of the word line 40 buried in the active region 12 may be in a rectangular or in an oval form, It is easier to form the first word line recess where the word line 40 is filled in (see FIG. 3 i ) in an oval shape as shown in FIG. 4( b ) rather than in a rectangular shape as shown in FIG. 4( a ).
- the active region 12 may have a rectangular pillar shape or a cylindrical column shape in addition to the rectangular shape shown in FIG. 4 .
- the active region is formed in a cylindrical column shape, it is easier to etch the substrate 10 (see FIG. 3 a ) in order to obtain the active region 12 .
- the active region 12 may be formed to have a cylindrical column shape, and the cross-sectional shape of the word line 40 may be formed to be oval.
- the storage node contact 54 it is possible to form the storage node contact 54 over the upper portion of the active region 12 and the word line 40 .
- the lower storage electrode 50 of the capacitor is formed over the upper portion of the word line 40 and the second insulating film 42 .
- the storage node contact 54 includes a conductive material such as polysilicon or a metal film,
- the word line 40 is buried in the middle part of the active region 12 in order to form a channel in the active region 12 along the left and right sidewall of the word line.
- the word line 40 may be formed as shown in FIG. 7 so that a channel is formed along the one sidewall only of the word line 40 .
- the upper side end portion of the word line 40 is formed lower than the upper side end portion of the active region 12 , thereby enlarging the contact area of the active region 12 with the lower electrode 50 .
- the active region 12 and the lower electrode 50 are still in contact with each other, thereby making the transistor properly operable.
- the word line insulating film 34 also can be subject to an etch to be at a substantially same level as the recessed word line 40 .
- the bottom of the word line 40 is formed to have a step difference as shown in FIG. 3 j or 3 l, thereby enlarging the area where the word line 40 and the active region 12 are in contact to maximize the channel area (see (a) of FIG. 9 ).
- the operation of the transistor is intact although the lower portion of the word line 40 is formed flat with no step difference.
- FIG. 10 is a plan view illustrating a semiconductor device including a vertical transistor according to an embodiment of the present invention, Referring to FIG. 10 , one word line 40 is electrically coupled with one bit line 27 in each cell having one capacitor 56 , thereby resulting in a 4F2 layout where a channel of the transistor is vertically formed.
- a semiconductor device including a vertical transistor and a method for manufacturing the same may reduce a unit cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require a bit line contact, a storage node contact or a landing plug to be formed, thereby reducing the number of process steps.
Abstract
A semiconductor device including a vertical transistor and a method for manufacturing the same may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps. The semiconductor device including a vertical transistor comprises: an active region formed in a semiconductor substrate; a bit line disposed in the lower portion of the active region; a word line buried in the active region; and a capacitor to disposed over the upper portion of the active region and the word line,
Description
- The priority of Korean patent application No. 10-2010-0067333 filed on Jul. 13, 2010, the disclosure of which is hereby incorporated in its entirety by reference, is claimed.
- An embodiment of the present invention relates to a semiconductor device including a vertical transistor and a method for manufacturing the same.
- In general, a semiconductor is a material which belongs to an intermediate region of a conductor and a nonconductor according to classification of materials based on electrical conductivity. Although a semiconductor is similar to a nonconductor in a pure state, the electrical conductivity of the semiconductor changes by addition of impurities or by other manipulations. The semiconductor has been used to produce a semiconductor device such as a transistor by addition of impurities and connection of the conductor. A semiconductor apparatus refers to an apparatus having various functions performed by the semiconductor device. A representative example of the semiconductor apparatus is a semiconductor memory apparatus.
- A semiconductor memory apparatus comprises a plurality of unit cells each including a capacitor and a transistor. A double capacitor is used to store data temporarily, and a transistor is used to transfer data between a bit line and a capacitor in response to a control signal (word line) using an electrical conductivity change. A transistor includes three regions such as a gate, a source and a drain. In a transistor, charges between the source and the drain move in response to a control signal. The movement of charges between the source and the drain is performed through a channel region which has the property of the semiconductor.
- When a general transistor is formed in a semiconductor substrate, a gate is formed in the semiconductor substrate, and impurities are doped at both sides of the gate so as to form a source and a drain. In this case, a space between the source and the drain under the gate is a channel region of the transistor, A transistor having a vertical channel region occupies given area of the semiconductor substrate. In case of a complicated semiconductor memory apparatus, it is difficult to reduce a unit cell area because the number of transistors included in a unit cell increases.
- If a unit cell area of a semiconductor apparatus is reduced, it is possible to increase the number of net die per wafer, thereby improving productivity. In order to reduce a unit cell area of a semiconductor memory apparatus, various methods have been suggested. As one of these methods, a 3D transistor is used which includes a vertical transistor having a vertical channel region instead of a conventional planar transistor having a horizontal channel region.
- Various embodiments of the invention are directed to a semiconductor device including a vertical transistor and a method for manufacturing the same that may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps.
- According to an embodiment of the present invention, a semiconductor device including a vertical transistor comprises: an active region formed in a semiconductor substrate; a bit line disposed in a lower portion of the active region; a word line buried in the active region; and a capacitor disposed on an upper portion of the active region and being coupled to the bit line via the active region. As a result, the semiconductor device may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps.
- The word line and the active region are in contact and defining a step difference, thereby maximizing a channel area. The surface contacting with the word line and the active region is straight-line.
- The cross-sectional shape of the word line is rectangular or oval. The active region has a rectangular pillar shape or a cylindrical column shape.
- The semiconductor device further comprises a storage node contact coupled between the upper portion of the active region and the lower portion of the capacitor.
- The word line is buried in the middle part of the active region or at one sidewall of the active region so that a channel is formed at one side or at both sides. An upper side end portion of the word line extends to a level lower than an upper side end portion of the active region, thereby maximizing the area contacting with the active region and the lower electrode of the capacitor.
- The bit line and the word line are extended in a perpendicular direction from each other. The semiconductor device further comprises a first insulating film disposed between the active regions, thereby insulating a space between the active regions.
- The semiconductor device further comprises a word line insulating film including an oxide film disposed between the active region and the word line. The bit line includes any of a metal material such as tungsten (W) or an ion-implanting region.
- The semiconductor device further comprises an second insulating film between the word line and the capacitor. And the semiconductor device may further comprise an protective film disposed between the active region and the first insulating film, and disposed parallel with the bit line.
- According to an embodiment of the present invention, a method for manufacturing a semiconductor device including a vertical transistor comprises: forming an active region in a semiconductor substrate; forming a bit line in a lower portion of the active region; forming a word line below an upper surface of the active region; and forming a capacitor over an upper portion of the active region and the word line to be coupled to the bit line via the active region. The method may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps. Additionally, the method reduces parasitic capacitance between the word line and the bit line.
- The forming-the-word-line-in-the-active-region includes etching the semiconductor substrate including the active region so as to have a step difference, thereby maximizing a channel area.
- The forming-the-word-line-in-the-active-region includes etching the cross-sectional view of the active region so as to have a rectangular or oval shape. The forming-an-active-region-in-the-semiconductor-substrate includes etching the active region so as to have a rectangular pillar shape or a cylindrical column shape.
- Before forming the capacitor, the method further comprises forming a storage node contact on the upper portion of the active region and the word line, thereby enhancing the electric connection between the capacitor and the active region.
- The forming-the-word-line-in-the-active-region includes: etching a middle part or one sidewall region of the active region including the bit line; and burying a word line material in the etched active region.
- The forming-the-word-line-in-the-active-region includes: etching a portion of the active region including the bit line; burying a word line material in the etched active region; and etching a portion of the buried word line material so that the upper side end portion of the word line extends to a level lower than an upper side end portion of the active region, thereby maximizing the contact area of the lower electrode and the active region of the capacitor.
- The word line is formed perpendicular to the bit line. After forming a word line in the active region, the method further comprises forming a second insulating film between the word line and the capacitor, thereby insulating a space between the active regions.
- After forming the bit line, the method further comprises depositing a first insulating film between neighboring active regions. Before forming the word line, the method further comprises forming a word line insulating film including an oxide film between the active region and the word line.
- The forming-a-bit-line-in-the-lower-portion-of-the-active-region includes includes: forming a protective film over the active region; forming an sacrificial film over the protective film; patterning the protective film and the sacrificial film between the active regions to form a first recess; patterning the lower portion of the first recess to form a bulb-like recess extended from the first recess; filling a bit line material in the bulb-type recess to form a bulb-like bit line; forming a second recess passing through the bulb-like bit line sot that the recess forms two electrically separated bit lines; and forming an insulating film in the second recess.
-
FIGS. 1 and 2 are perspective views illustrating a semiconductor device including a vertical transistor according to an embodiment of the present invention. -
FIGS. 3 a to 3 q are cross-sectional views illustrating a method for manufacturing a semiconductor device including a vertical transistor according to an embodiment of the present invention. -
FIGS. 4 to 9 illustrating other embodiments of a semiconductor device including a vertical transistor according to an embodiment of the present invention, -
FIG. 10 is illustrating a semiconductor device including a vertical transistor according to an embodiment of the present invention. - The present invention will be described in detail with reference to the attached drawings.
-
FIGS. 1 and 2 are perspective views illustrating a semiconductor device including a vertical transistor according to an embodiment of the present invention.FIG. 2 shows the semiconductor device ofFIG. 1 with a first insulating film omitted. - Referring to
FIG. 1 , a semiconductor device including a vertical transistor comprises a plurality ofactive regions 12 in a pillar shape and separated by a firstinsulating film 28 from one another. In a direction taken along A-A′, aword line 40 is formed penetrating the plurality ofactive regions 12 or extending inside of the plurality ofactive regions 12 to be in a buried shape. A wordline insulating film 34 including an insulating material such as an oxide film is formed between theword line 40 and theactive region 12. A bottom surface of alower electrode 50 is formed on the upper portion of theword line 40 in eachactive region 12. Acapacitor 56 including thelower electrode 50 is disposed thereon. - Referring to
FIG. 2 , abit line 27 is extended in the lower portion of theactive region 12 in a perpendicular direction of theword line 40. - In the semiconductor device including a vertical transistor according to an embodiment of the present invention, the
word line 40 is not formed outside of theactive region 12, for example, over theactive region 12. Instead, theword line 40 is formed inside of theactive region 12 or formed penetrating theactive region 12, thereby reducing the cell area and also decreasing parasitic capacitance generated between theword line 40 and thebit line 27. -
FIGS. 3 a to 3 q are cross-sectional views illustrating a method for manufacturing a semiconductor device including a vertical transistor according to an embodiment of the present invention, taken along A-A′ ofFIGS. 1 and 2 . - As shown in
FIG. 3 a, after a mask (not shown) is formed on asemiconductor substrate 10, thesemiconductor substrate 10 is etched with the mask to form anactive region 12. Referring toFIG. 3 b, aprotective film 14 is formed on the surface of thesemiconductor substrate 10. Theprotective film 14 includes an insulating material such as an oxide film and is formed, for example, by a physical vapor deposition (PVD) method. - Referring to
FIG. 3 c, asacrificial film 16 is formed over the entire surface of thesemiconductor substrate 10 including theprotective film 14. Thesacrificial film 16 is a material for protecting theactive region 12 from a subsequent etching process. Thesacrificial film 16 includes any of an oxide film and a nitride film. - As shown in
FIG. 3 d, thesacrificial film 16 disposed between the twoactive regions 12 is etched until thesubstrate 10 is exposed to form afirst recess 22. Thefirst recess 22 is required to form a bit line 27 (seeFIG. 3 g). The etching process for forming thefirst recess 22 is performed with thesemiconductor substrate 10 as an etch target to remove theprotective film 14 and asacrificial film 16 located between theactive regions 12. - Referring to
FIG. 3 e, a wet etching process is performed onto thefirst recess 22 to form a bulb-type recess 24 extended downward from thefirst recess 22. In the wet etching process, theprotective film 14 that remains at a sidewall of thefirst recess 22 can serve as a mask protecting a sidewall of theactive region 12 from being attacked. - Referring to
FIG. 3 f, abit line material 26 is deposited over the entire surface of the semiconductor substrate so that thebit line material 26 fills in thefirst recess 22 and the bulb-type recess 24. Thebit line material 26 disposed on the upper portion of thesacrificial film 16 is planarized and removed.FIG. 3 f shows the device after the removal step. Alternatively, thebit line material 26 includes a metal material such as tungsten W. The bit line can be formed not by a method of filling in a metal material into thefirst recess 22 and the bulb-type recess 24 but by an ion-implanting method to form an ion-implantation region in thesubstrate 10. - Referring to
FIG. 3 g, a region where thefirst recess 22 is located is re-etched until thesubstrate 10 is exposed to form asecond recess 29. Thebit line material 26 in the bulb-type recess 24 is divided into two parts, each of which forms abit line 27. Thesecond recess 29 forms a gap through the middle ofbit line material 26. As shown inFIG. 3 h, the first insulatingfilm 28 is deposited on the entire surface of the semiconductor substrate and fills in thesecond recess 29, thereby electrically isolating the separatedbit lines 27 from each other. - Referring to
FIG. 3 i, the bitline insulating film 28, theprotective film 14 and theactive region 12 are etched along a horizontal direction (A-A′ direction ofFIG. 1 ) which is perpendicular to thebit line 27 so as to form a first word line recess (not shown). A step-formingmask 30 is formed on the upper portion of theactive region 10 and the first insulatingfilm 28. The step-formingmask 30 is formed with a photoresist film or with a hard mask including a nitride film or an amorphous carbon layer. The step-formingmask 30 is formed over abit line 27 and the first insulatingfilm 28. The step-formingmask 30 is a mask for providing a step difference 32 (seeFIG. 3 j) in the lower portion of theactive region 12 so that a step difference may be formed in the lower end portion of the word line 40 (seeFIG. 3 l). One of skill in the art will appreciate that the step difference can be formed by a method other than using step-formingmask 30 in other embodiments of the present invention. - As shown in (a) of
FIG. 3 j, thesubstrate 10 is etched by using the step-formingmask 30 as an etching mask, thereby forming a secondword line recess 44 having astep difference 32 between neighboring bit lines 27. -
FIGS. 3 j(b) to 3 q(b) is a perspective view illustrating a region ‘B’ ofFIGS. 3 j(a) to 3 q(a). - Referring to
FIG. 3 k, a wordline insulating film 34 is deposited on thesubstrate 10 including the secondword line recess 44 with thestep difference 32 so that thesubstrate 10 formed of theactive region 12 is not in direct contact with a word line 40 (seeFIG. 3 l). The wordline insulating film 34 may include an oxide film. - As shown in
FIG. 3 l, aword line 40 material is deposited on the entire surface of thesemiconductor substrate 10 including the wordline insulating film 34. Theword line 40 includes a metal material such as tungsten (W) or titanium (Ti) and a conductive material such as polysilicon. - Referring to
FIG. 3 m, the upper portion of theword line 40 is etched by an etch-back process or planarized by a Chemical Mechanical Polishing (CMP) process so as to remove theword line 40 material located at the upper portion of the word line insulating film 34 (it is possible to further remove the word line material so thatword line 40 may be formed lower than the upper portion of the word line insulating film, and an upper portion of theword line recess 44 remains empty), thereby separating neighboring word lines 40. - Referring to
FIG. 3 n, a second insulatingfilm 42 including an insulating film such as an oxide film is formed on the upper portion of theword line 40. - As shown in
FIG. 3 o, a storagenode insulating film 52 is deposited on the upper portion of the second insulatingfilm 42 and the wordline insulating film 34. As shown inFIG. 3 p, a region is etched which is reserved for a lower storage electrode 50 (seeFIG. 3 q). The storagenode insulating film 52 is etched using the second insulatingfilm 42 as an etch target until the surface of the second insulatingfilm 42 is exposed (seeFIG. 3 q). - Referring to
FIG. 3 q, alower storage electrode 50 is formed over the exposed second insulatingfilm 42. A dielectric film and an upper storage electrode are formed on the upper portion of thelower electrode 50, thereby obtaining acapacitor 56 shown inFIGS. 1 and 2 . Thecapacitor 56 may be in various kinds of structures such as a concave type, a cylinder type and a pillar type. - By the above-described method shown in
FIGS. 3 a to 3 q, the semiconductor device including a vertical transistor shown inFIGS. 1 and 2 can be formed. -
FIGS. 4 to 9 are each illustrating another example of a semiconductor device including a vertical transistor according to an embodiment of the present invention. - Referring to (b) of
FIG. 4 (the embodiment shown in (a) ofFIG. 4 is identical to what shown inFIG. 1 ), the cross-sectional view of theword line 40 buried in theactive region 12 may be in a rectangular or in an oval form, It is easier to form the first word line recess where theword line 40 is filled in (seeFIG. 3 i) in an oval shape as shown inFIG. 4( b) rather than in a rectangular shape as shown inFIG. 4( a). - Referring to
FIG. 5 , theactive region 12 may have a rectangular pillar shape or a cylindrical column shape in addition to the rectangular shape shown inFIG. 4 . When the active region is formed in a cylindrical column shape, it is easier to etch the substrate 10 (seeFIG. 3 a) in order to obtain theactive region 12. As shown in (b) ofFIG. 5 , theactive region 12 may be formed to have a cylindrical column shape, and the cross-sectional shape of theword line 40 may be formed to be oval. - Referring to
FIG. 6 , it is possible to form thestorage node contact 54 over the upper portion of theactive region 12 and theword line 40. In the embodiment illustrated inFIGS. 1 and 2 , thelower storage electrode 50 of the capacitor is formed over the upper portion of theword line 40 and the second insulatingfilm 42. However, if necessary, the cell operation is not affected even when astorage node contact 54 is formed in such a shape as shown inFIG. 6 . Thestorage node contact 54 includes a conductive material such as polysilicon or a metal film, - Referring to the embodiment illustrated in
FIGS. 1 and 2 , theword line 40 is buried in the middle part of theactive region 12 in order to form a channel in theactive region 12 along the left and right sidewall of the word line. In other embodiments, theword line 40 may be formed as shown inFIG. 7 so that a channel is formed along the one sidewall only of theword line 40. - In the embodiment illustrated in
FIGS. 1 and 2 , the upper side end portion of theword line 40 is formed lower than the upper side end portion of theactive region 12, thereby enlarging the contact area of theactive region 12 with thelower electrode 50. However, even when the upper side end portion of theword line 40 is formed at a substantially identical level to the upper side end portion of theactive region 12 as shown inFIG. 8 , theactive region 12 and thelower electrode 50 are still in contact with each other, thereby making the transistor properly operable. In case the upper portion of theword line 40 material is recessed by the process shown inFIG. 3 m using a CMP or an etch-back process, the wordline insulating film 34 also can be subject to an etch to be at a substantially same level as the recessedword line 40. - In the embodiment shown in
FIGS. 1 and 2 , the bottom of theword line 40 is formed to have a step difference as shown inFIG. 3 j or 3 l, thereby enlarging the area where theword line 40 and theactive region 12 are in contact to maximize the channel area (see (a) ofFIG. 9 ). As shown in (b) ofFIG. 9 , however, the operation of the transistor is intact although the lower portion of theword line 40 is formed flat with no step difference. -
FIG. 10 is a plan view illustrating a semiconductor device including a vertical transistor according to an embodiment of the present invention, Referring toFIG. 10 , oneword line 40 is electrically coupled with onebit line 27 in each cell having onecapacitor 56, thereby resulting in a 4F2 layout where a channel of the transistor is vertically formed. - As described above, a semiconductor device including a vertical transistor and a method for manufacturing the same according to an embodiment of the present invention may reduce a unit cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require a bit line contact, a storage node contact or a landing plug to be formed, thereby reducing the number of process steps.
- The above embodiments of the present invention are illustrative and not limitative. Various alternatives and equivalents are possible. The invention is not limited by the type of deposition, etching, polishing, and patterning steps describe herein, Nor is the invention limited to any specific type of semiconductor device. For example, the present invention may be implemented in a dynamic random access memory (DRAM) device or non volatile memory device. Other additions, subtractions, or modifications are obvious in view of the present disclosure and are intended to fall within the scope of the appended claims.
Claims (21)
1. A semiconductor device including a vertical transistor, the device comprising:
an active region formed in a semiconductor substrate;
a bit line disposed in a lower portion of the active region;
a word line buried in the active region, the word line being formed inside of the active region or formed penetrating the active region; and
a capacitor disposed over an upper portion of the active region and the word line, the capacitor being coupled to the bit line via the active region.
2. The semiconductor device according to claim 1 , wherein to the word line and the active region are in contact and defining a step difference.
3. The semiconductor device according to claim 1 , wherein the word line and the active region are in contact with substantially no step difference.
4. The semiconductor device according to claim 1 , wherein the cross-sectional shape of the word line is rectangular or oval.
5. The semiconductor device according to claim 1 , wherein the active region has a rectangular pillar shape or a cylindrical column shape.
6. The semiconductor device according to claim 1 , further comprising a storage node contact coupled between upper portion of the active region and the lower portion of the capacitor.
7. The semiconductor device according to claim 1 , wherein the word line is buried in a middle part of the active region or at one sidewall of the active region.
8. The semiconductor device according to claim 1 , wherein an upper side end portion of the word line extends to a level lower than an upper side end portion of the active region.
9. The semiconductor device according to claim 1 , wherein the bit line and the word line extend in a perpendicular direction from each other.
10. The semiconductor device according to claim 1 , further comprising a first insulating film disposed between the active regions.
11. The semiconductor device according to claim 1 , further comprising a word line insulating film including an oxide film disposed between the active region and the word line.
12. The semiconductor device according to claim 1 , wherein the bit line includes any of a metal and an ion-implanting region.
13. The semiconductor device according to claim 1 , further comprising a second insulating film between the word line and the capacitor.
14. The semiconductor device according to claim 10 , further comprising an protective film disposed between the active region and the first insulating film, and disposed parallel with the bit line.
15-30. (canceled)
31. The semiconductor device according to claim 1 , wherein the capacitor is formed to have at least one of a concave type, a cylinder type and a pillar type.
32. A semiconductor device comprising:
a vertical word line formed over a substrate;
a semiconductor pattern at least partly surrounding a sidewall of the vertical word line;
a bit line formed at a first end of the vertical word line; and
a storage node electrode formed at a second end of the vertical word line;
wherein the bit line and the storage node electrode are electrically coupled to each other through the semiconductor pattern, and
wherein the vertical word line is formed inside of the semiconductor pattern or formed penetrating the semiconductor pattern.
33. The semiconductor device of claim 32 , wherein the semiconductor pattern defines an active region for a unit cell.
34. The semiconductor device of claim 32 , wherein the vertical word line extends to a first neighboring unit cell along a first direction, and wherein the bit line extends to a second neighboring unit cell along a second direction perpendicular to the first direction.
35. The semiconductor device of claim 34 , wherein the vertical word line has a step difference at the first end along the first direction between a first region where the bit line is formed and a second region where the bit line is not formed, or the word line is substantially flat at the first end along the first direction.
36. The semiconductor device of claim 32 , wherein the vertical word line is buried in a middle part of the semiconductor pattern or at one sidewall of the semiconductor pattern.
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US13/746,274 US20130126956A1 (en) | 2010-07-13 | 2013-01-21 | Semiconductor device including vertical transistor and method for manufacturing the same |
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KR1020100067333A KR101140079B1 (en) | 2010-07-13 | 2010-07-13 | Semiconductor device comprising vertical transistor and method for forming the same |
KR10-2010-0067333 | 2010-07-13 | ||
US12/976,792 US8383477B2 (en) | 2010-07-13 | 2010-12-22 | Semiconductor device including vertical transistor and method for manufacturing the same |
US13/746,274 US20130126956A1 (en) | 2010-07-13 | 2013-01-21 | Semiconductor device including vertical transistor and method for manufacturing the same |
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US13/746,274 Abandoned US20130126956A1 (en) | 2010-07-13 | 2013-01-21 | Semiconductor device including vertical transistor and method for manufacturing the same |
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US10325988B2 (en) | 2013-12-13 | 2019-06-18 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped field plates |
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US8637912B1 (en) * | 2012-07-09 | 2014-01-28 | SK Hynix Inc. | Vertical gate device with reduced word line resistivity |
US20140036565A1 (en) * | 2012-08-02 | 2014-02-06 | Nanya Technology Corporation | Memory device and method of manufacturing memory structure |
KR101932229B1 (en) * | 2012-08-28 | 2019-03-21 | 에스케이하이닉스 주식회사 | Semiconductor device having buried bitline and method for fabricating the same |
KR101986145B1 (en) | 2012-08-28 | 2019-06-05 | 에스케이하이닉스 주식회사 | Semiconductor device with buried bitline and method for manufacturing the same |
KR101965862B1 (en) | 2012-08-28 | 2019-04-08 | 에스케이하이닉스 주식회사 | Semiconductor device with buried bitline and method for manufacturing the same |
KR102008422B1 (en) * | 2012-12-17 | 2019-08-08 | 에스케이하이닉스 주식회사 | Nonvolatile memory device and method for fabricating the same |
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WO2018092003A1 (en) * | 2016-11-17 | 2018-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
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US20120012913A1 (en) | 2012-01-19 |
KR20120006713A (en) | 2012-01-19 |
US8383477B2 (en) | 2013-02-26 |
KR101140079B1 (en) | 2012-04-30 |
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