US20120138472A1 - Method of forming a process chamber component having electroplated yttrium containing coating - Google Patents
Method of forming a process chamber component having electroplated yttrium containing coating Download PDFInfo
- Publication number
- US20120138472A1 US20120138472A1 US13/372,435 US201213372435A US2012138472A1 US 20120138472 A1 US20120138472 A1 US 20120138472A1 US 201213372435 A US201213372435 A US 201213372435A US 2012138472 A1 US2012138472 A1 US 2012138472A1
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- US
- United States
- Prior art keywords
- yttrium
- metal
- electroplating bath
- species
- aluminum
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
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- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
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- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
- C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
- C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/42—Electroplating: Baths therefor from solutions of light metals
- C25D3/44—Aluminium
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/625—Discontinuous layers, e.g. microcracked layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12458—All metal or with adjacent metals having composition, density, or hardness gradient
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/12611—Oxide-containing component
- Y10T428/12618—Plural oxides
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- Y10T428/12771—Transition metal-base component
- Y10T428/12778—Alternative base metals from diverse categories
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- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
Definitions
- the present invention relates to a substrate processing chamber component and methods of manufacturing the same.
- the substrate In processing of a substrate in a process chamber, as in the manufacture of integrated circuits and displays, the substrate is typically exposed to energized gases that are capable of, for example, etching or depositing material on the substrate.
- the energized gases can also be provided to clean surfaces of the chamber.
- the energized gases can often comprise corrosive halogen-containing gases and other energized species that can erode components of the chamber, such as the chamber enclosure wall.
- chamber components made of aluminum can chemically react with energized halogen-containing gases to form AlCl 3 or AlF 3 , thereby corroding the components.
- the corroded portions of the components can flake off and contaminate the substrate, which reduces the substrate yield.
- the corroded components must often be replaced or removed from the chamber and cleaned, resulting in undesirable chamber downtime.
- the corrosion resistance of a chamber component can be improved by forming a coating of a corrosion resistant material over surfaces of component that are susceptible to erosion, such as surfaces that would otherwise be exposed to the energized gas.
- the corrosion resistant coating can be formed by methods such as plasma spraying or thermal spraying coating material onto the surface of an underlying structure of the component.
- a coating of aluminum oxide can be plasma sprayed onto the surface of an aluminum chamber wall to form a coating that exhibits improved corrosion resistance.
- the components having the coatings can exhibit other problems during chamber processes.
- thermal expansion mismatch between the coating and underlying component structure can lead to stresses at the interface between the coating and underlying structure that causes the coating to flake off the underlying structure, thereby exposing the underlying structure to the corrosive energized gas.
- the particles of loose coating material can also deposit on and contaminate the substrates being processed in the chamber.
- the thermal expansion mismatch problem is further exacerbated if there is frequent thermal cycling between or during substrate processing steps.
- the method includes: providing a component structure composed of metal; immersing the surface of the component structure in an electroplating bath comprising first metal electrolyte species and second metal electrolyte species; forming a cathode by connecting the component structure to a negative terminal of a voltage source; immersing in the electroplating bath, an anode comprising an inert material or material to be electroplated, and connecting the anode to a positive terminal of the voltage source; and varying the concentration of one or more of the first and second metal electrolyte species in the electroplating bath to electroplate a layer comprising a concentration gradient of the first metal, second metal, or both.
- a plasma chamber component is fabricated by: providing a component structure composed of metal; immersing the surface of the component structure in an electroplating bath to serve as a cathode, the electroplating bath comprising (i) first metal electrolyte species consisting of yttrium-containing species, and (ii) second metal electrolyte species comprising aluminum-containing species; immersing an anode in the electroplating bath, the anode comprising an inert material or material to be electroplated; applying a voltage across the component structure and the anode; and varying the voltage applied across the component structure and the anode, to electroplate a layer comprising a concentration gradient of the first metal, second metal, or both.
- a plasma chamber component is fabricated by: providing a component structure composed of metal; immersing the surface of the component structure in an electroplating bath to serve as a cathode, the electroplating bath comprising (i) first metal electrolyte species consisting of yttrium-containing species, and (ii) second metal electrolyte species comprising aluminum-containing species; immersing an anode in the electroplating bath, the anode comprising an inert material or material to be electroplated; applying a voltage across the component structure and the anode; and varying the pH of the electroplating bath to electroplate a layer comprising a concentration gradient of the first metal, second metal, or both.
- FIG. 1 is a schematic sectional side view of a version of an embodiment of a process chamber according to the present invention
- FIG. 2 is a partial sectional schematic side view of a chamber component comprising an integral surface coating comprising yttrium-containing species;
- FIG. 3 is a schematic sectional side view of an electroplating apparatus
- FIG. 4 is a schematic sectional side view of an annealer
- FIG. 5 a is a flow chart of an embodiment of a process for electroplating layers comprising yttrium and aluminum on a surface of a component and annealing the layers to form an integral surface coating;
- FIG. 5 b is a flow chart of an embodiment of a process for electroplating a layer comprising a mixture of yttrium and aluminum on the surface of a component and annealing the layer to form an integral surface coating;
- FIG. 6 a is a partial sectional schematic side view of a chamber component comprising a coating having first and second electroplated layers;
- FIG. 6 b is a partial sectional schematic side view of a chamber component comprising a coating having an electroplated layer comprising a mixture of yttrium-containing and other species.
- the corrosion resistance of a chamber component 114 is improved by providing an integral surface coating 117 comprising yttrium-containing species.
- the integral surface coating 117 is provided to protect the surfaces 115 of components 114 that are exposed to energized gas plasmas, high temperatures, corrosive gases, and/or erosive sputtering species in the process zone 108 of a process chamber, or that are otherwise susceptible to erosion.
- the component 114 having the integral surface coating 117 can comprise at least a portion or structure of one or more of a chamber wall 107 , chamber liner 105 , substrate support 110 , gas supply 130 , gas energizer 154 , gas exhaust 144 , and substrate transport 101 .
- the component 114 having the integral surface coating 117 comprises a portion of the chamber liner 105 , as shown in FIG. 1 .
- the integral surface coating 117 covers at least a portion of an underlying structure 111 of the component 114 and forms a unitary and continuous structure that is absent a discrete and sharp crystalline boundary therebetween, as schematically illustrated in FIG. 2 with a dotted line.
- the integral surface coating is formed in-situ from the surface of the component 114 using the underlying component material.
- the surface coating 117 is more strongly bonded to the underlying component material or structure than conventional coatings, such as plasma sprayed coatings, which have a discrete interface with the underlying component structure.
- the strongly bonded integral surface coating 117 can better withstand thermal stresses and reduces flaking off of the coating and resultant contamination of the substrates 104 .
- the integral surface coating 117 comprises yttrium-containing species that provide corrosion resistance in a processing environment, such as at least one of elemental yttrium and yttrium oxide (Y 2 O 3 ).
- Y 2 O 3 elemental yttrium and yttrium oxide
- oxidized yttrium species improves corrosion resistance, and thus, the presence of these species in the coating 117 is desirable.
- the surface coating 117 can also comprise other corrosion resistant species in combination with the yttrium-containing species.
- the coating 117 can comprise corrosion resistant species comprising aluminum-containing species, such as elemental aluminum and aluminum oxide.
- the coating 117 can also comprise yttrium-aluminum alloys and compounds, such as a yttrium-aluminum compound having a predefined stoichiometric ratio of yttrium oxide and aluminum oxide, as in yttrium aluminum garnet (YAG).
- YAG yttrium aluminum garnet
- the coating 117 comprises zirconium-containing species in addition to the yttrium-containing species, such as for example, elemental zirconium or zirconium oxide.
- the combination of the yttrium-containing and zirconium-containing material can be tailored to provide partially stabilized zirconia (PSZ) or tetragonal zirconia polycrystals (TZP).
- PSZ comprises zirconia polymorphs, such as cubic and metastable tetragonal ZrO 2 , and is obtained by adding a controlled amount of cubic phase-forming stabilizer oxide material, such as yttrium oxide.
- PSZ tetragonal zirconia polycrystal
- PSZ comprises at least about 3 wt % of MgO, 2 to 6 wt % of CaO, or 3 to 9 wt % of Y2O 3 .
- PSZ is a transformation-toughened material because of microcracks and induced stress phenomena.
- Microcracks which occur due to the difference in thermal expansion between the cubic, and monoclinic or tetragonal phase, dissipate the energy of propagating cracks. Induced stress arises from the tetragonal-to-monoclinic transformation. The presence of the cubic matrix provides a compressive force that maintains the tetragonal phase. Energy from a propagating crack causes a transition from the metastable tetragonal to the stable monoclinic phase to slow or stop propagation of the cracks.
- the zirconium oxide can also form a zirconia dispersion toughened ceramic (ZTC) in which tetragonal zirconia is dispersed in another ceramic, such as aluminum oxide or yttrium oxide, to toughen the ceramic.
- ZTC zirconia dispersion toughened ceramic
- the coating 117 can also comprise a concentration gradient of yttrium-containing species through a thickness of the coating 117 .
- the composition of the coating 117 gradually varies from the coating surface to the underlying interface.
- the coating 117 can comprise a concentration gradient in which the concentration of a species varies so that is matches the composition of the underlying structure, and gradually changes with thickness to reach a desirable erosion resistant stoichiometric composition at the coating surface.
- the matching composition of the coating to the underlying structure 111 allows the coating to bond well to the underlying structure 111 , while the surface composition is tailored to provide better corrosion or other resistance.
- the concentration gradient provides a first concentration of yttrium-containing species in a first region of the coating 117 , such as at the surface 113 of the coating 117 , and a second concentration in a second region, such as towards the surface 112 of the underlying structure 111 that is lower than the first.
- the surface coating 117 can also comprise a second concentration gradient of a second species, such as aluminum or zirconium-containing species, comprising at least one of elemental aluminum, elemental zirconium, aluminum oxide and zirconium oxide.
- the second concentration gradient can increase or decrease with the first concentration gradient of yttrium-containing species, or can be substantially opposite the yttrium-containing species concentration gradient.
- the second concentration gradient provides an increase in a first concentration of an aluminum-containing species at the surface 113 of the coating 117 , to a second concentration that is higher than the first at the surface 112 of the underlying structure 111 .
- the resulting structure provides enhanced bonding to the underlying structure 111 while also providing improved corrosion resistance.
- the composition and thickness of the integral surface coating 117 is selected to enhance its resistance to corrosion and erosion, or other detrimental effects.
- a thicker integral surface coating 117 may provide a more substantial barrier to corrosion of the chamber component 114 , while a thinner coating is more suitable for thermal shock resistance.
- the integral surface coating 117 may even be formed such that the oxidized species extend throughout the depth of the component or just on its surface.
- a suitable thickness of the oxidized species in the integral surface coating 117 may be, for example, from about 12 micrometers (0.5 mils) to about 203 micrometers (8 mils), or even from about 25 micrometers (1 mil) to about 102 micrometers (4 mils.)
- the component 114 having the integral surface coating 117 can be formed by electroplating yttrium metal onto the surface 112 of an underlying structure 111 and subsequently annealing the coating and underlying structure 111 .
- One or more of the other corrosion resistant species such as aluminum and zirconium metals, can also be electroplated onto the structure 111 . Electroplating of the metals provides a layer that is well bonded to the underlying surface 112 and protects the underlying surface 112 from corrosion. Annealing the structure 111 and electroplated metals diffuses the electroplated metals and underlying structure 111 into one another to provide a unitary component structure.
- the metals can be electroplated onto the structure 111 by reducing one or more of yttrium, aluminum and zirconium-containing species to their elemental metal state at the surface 112 of the structure 111 .
- the surface 112 of the component 114 to be electroplated serves as a cathode and is connected to a negative terminal 401 of a voltage source 400 , as shown for example in FIG. 3 .
- the surface 112 is immersed in an electroplating bath 403 comprising, for example, an aqueous solution having one or more yttrium, aluminum and zirconium-containing electrolytes dissolved therein.
- An anode 404 connected to the positive terminal 402 of the voltage source is also immersed in the bath 403 , the anode comprising an inert material or even the material to be electroplated.
- Application of a bias voltage to the cathode 114 and anode 404 from the voltage source 400 builds up a negative charge on the surface 112 of the structure 111 , attracting the charged electrolyte species in the solution, which are then reduced to their elemental form at the surface 112 .
- the metals are “plated out” onto the surface 112 of the structure 111 .
- the electroplating conditions such as the concentration and composition of the electrolytes, the voltage applied, the pH of the bath solution and the temperature may be selected to provide electroplated layers having the desired composition and structure.
- Suitable yttrium containing electrolytes can comprise, for example, one or more of yttrium bromide, yttrium chloride, yttrium fluoride, yttrium nitrate, yttrium perchlorate, yttrium carbonate, yttrium sulfate, yttrium hydroxide, yttrium iodate and yttrium acetate.
- Aluminum containing electrolytes can comprise, for example, one or more of aluminum chloride, aluminum bromide, aluminum fluoride, and aluminum hydroxide.
- Zirconium containing electrolytes can comprise, for example, one or more of zirconium nitrate, zirconium silicate, zirconium sulfate and zirconium citrate.
- the bath solution can comprise an organic solvent, such as for example dimethylformamide (DMF), dimethylsulfoxide (DMSO), dimethoxyethane (DME), and tetrahydrofuran (THF).
- DMF dimethylformamide
- DMSO dimethylsulfoxide
- DME dimethoxyethane
- THF tetrahydrofuran
- Other suitable electroplating conditions such as different plating bath compositions and other electrolytes can also be used.
- the metals are electroplated onto the surface 112 of an underlying structure 111 that comprises a material that is similar to the electroplated metals, such as for example one or more of yttrium, aluminum and zirconium containing materials.
- the electroplated metals can be “grown” on the surface 112 of the underlying structure 111 to form a strongly bonded coating 117 without a discrete boundary between the coating 117 and underlying structure 111 .
- the underlying structure 111 can comprise an aluminum alloy that forms a strongly bonded continuous structure with an electroplated aluminum metal.
- the aluminum alloy is a mixture of aluminum with smaller amounts of one or more of copper, magnesium, manganese, gold, titanium, zinc, silicon and iron.
- the underlying structure comprises an aluminum alloy comprising at least about 90% by weight aluminum, and at most about 10% other metals.
- the underlying structure 111 comprises a yttrium containing material, such as a yttrium-aluminum alloy.
- the underlying structure 111 can also comprise a zirconium-containing alloy.
- the surface 112 of the component 114 and the electroplated material are annealed to form the integral surface coating 117 .
- the component 114 having the electroplated metals is heated to a temperature where the structure of the electroplated metals and underlying structure 111 begins to break up, and materials from the electroplated metal and structure 111 at least partially diffuse into each other.
- the intermixing of the materials between the electroplated layer and underlying structure 111 forms a more integral and unitary coating 117 without a discrete boundary, thereby strengthening the corrosion resistance of the coating 117 .
- the mixture of the materials provides a gradual change in composition from the surface 112 of the underlying structure 111 to the surface 113 of the coating 117 that resists flaking of the coating 117 and reduces thermal mismatch problems between the underlying structure 111 and coating 117 .
- the annealing process can also be repeated a desired number of times to achieve intermixing between the electroplated materials and underlying structure 111 .
- the coating 117 can be annealed in the presence of one or more of O 2 , O 3 and H 2 O to form oxides that show resistance to erosion by energized gases.
- the heat provided during the annealing process also facilitates the oxidation of the coating materials by speeding up the oxidation reaction.
- the oxidized species formed by annealing the component 114 can comprise one or more of as Y 2 O 3 and Al 2 O 3 , as well as oxidized yttrium aluminum compounds, such as yttrium aluminum garnet (YAG.)
- oxidized yttrium aluminum compounds such as yttrium aluminum garnet (YAG.)
- Other oxidized species such as zirconium oxide (ZrO 2 ) in various phases can also form, according to the composition of materials electroplated onto the structure.
- the annealing process results in a coating composition having a concentration gradient of oxidized species, with a greater concentration of oxidized species near the surface 113 of the coating 117 , thus enhancing the corrosion resistance of the coating 117 .
- the annealer 500 comprises a heat source 510 , such as an incoherent or coherent electromagnetic radiation source, that is capable of heating the component 114 to a suitable temperature for annealing.
- the annealer 500 may heat the component 114 to a temperature of at least about 600° C., such as for example, at least about 900° C.
- the annealer 500 is a rapid thermal annealer 505 comprising a heat source 510 that includes tungsten halogen lamps 515 to generate radiation and a reflector 520 to reflect the radiation onto the component 114 .
- a fluid 525 such as air or water is flowed along the heat source 510 to regulate the temperature of the heat source 510 .
- a quartz plate 530 is provided between the heat source 510 and the component 114 to separate the fluid from the component 114 .
- the rapid thermal annealer 505 may further comprise a temperature monitor 540 to monitor the temperature of the component 114 .
- the temperature monitor 540 comprises an optical pyrometer 545 that analyzes radiation emitted by the component 114 to determine a temperature of the component 114 .
- FIG. 5 a illustrates an embodiment of an electroplating and annealing method of chamber component manufacture.
- a chamber component 114 comprising an underlying structure 111 is formed from a metal or an alloy, such as an aluminum alloy.
- a first layer 119 comprising a first material, such as aluminum, is electroplated onto the surface 112 of the structure 111 .
- a second layer 120 comprising a second material, such as yttrium, is electroplated onto the surface 112 of the structure 111 .
- the first and second layers are then annealed to form the integral surface coating 117 .
- the coating 117 having the first and second layers 119 , 120 is formed by exposing the surface 112 of the underlying structure 111 to electroplating conditions that result in selective plating of a desired material.
- the surface 112 can be exposed to a bath comprising the desired first material present as an electrolyte in the solution and substantially absent the second material, to form a first layer 119 comprising the desired first material.
- the surface 112 is exposed to a bath comprising the desired second material, and substantially absent the first material, to form the second layer 120 .
- FIG. 6 a shows the integral surface coating 117 formed by electroplating the first and second layers 119 , 120 .
- the surface 112 is exposed to conditions to electroplate a first layer 119 comprising aluminum, and thereafter exposed to conditions to electroplate a second layer 120 comprising yttrium.
- the electroplating conditions can alternatively be selected to electroplate a first layer 119 comprising yttrium, and a second layer 120 comprising aluminum.
- Electroplating conditions can be further selected to electroplate one or more of a first layer 119 and second layer 120 comprising zirconium.
- the layers may also be alternated a desired number of times to achieve a coating 117 having the desired composition.
- a first layer 119 comprising aluminum is electroplated onto the surface 112 by immersing the surface 112 in an aqueous solution comprising, for example, one or more of aluminum chloride, aluminum bromide, aluminum fluoride and aluminum hydroxide.
- a suitable bias voltage is applied to the surface 112 to form the layer 119 of aluminum metal.
- a second layer 120 comprising yttrium is then plated over the first layer 119 by immersing the surface of the first layer 119 in an aqueous solution comprising, for example, one or more of yttrium bromide, yttrium chloride, yttrium fluoride, yttrium nitrate, yttrium perchlorate, yttrium carbonate, yttrium sulfate, yttrium hydroxide, yttrium iodate and yttrium acetate, and applying a suitable bias voltage to bias the surface 112 and form the layer 120 of yttrium metal.
- an aqueous solution comprising, for example, one or more of yttrium bromide, yttrium chloride, yttrium fluoride, yttrium nitrate, yttrium perchlorate, yttrium carbonate, yttrium sulfate, y
- Suitable concentrations of the aluminum and yttrium-containing electrolytes in the solutions may be, for example, from about 0.1 mM to about 50 M, and a suitable bias voltage for depositing the layers 119 , 120 may be, for example, a bias voltage that is sufficient to provide a current density of from about 0.1 A/dm 2 to about 100 A/dm 2 (amps per decimeter squared).
- the bath solution can comprise an organic solvent, such as for example one or more of dimethylformamide, dimethylsulfoxide, dimethoxyethane, and tetrahydrofuran.
- the coating 117 having the first and second layers 119 , 120 is then annealed, for example in the annealer shown in FIG. 4 , to provide the unitary coating structure, as shown in FIG. 2 , and to form corrosion resistant oxides.
- Annealing of the layers 119 , 120 also inter-diffuses material between the layers 119 , 120 to form a concentration gradient of species that provides a gradual change in the coating composition throughout the thickness of the coating 117 .
- the annealing of the layers 119 , 120 can also provide a concentration gradient of one or more yttrium-containing species through the thickness of the coating 117 that improves bonding to the underlying structure 111 and enhances corrosion resistance.
- a chamber component 114 comprises an underlying structure 111 formed from a metal or an alloy.
- a layer 121 comprising a mixture of species, such as a mixture of aluminum and yttrium, is then electroplated onto the surface 112 of the component 114 .
- the electroplated layer 121 is annealed to form the integral surface coating 117 and to provide corrosion resistant oxidized species.
- the layer 121 comprising the mixture of species is formed by co-depositing metals such as yttrium and at least one of aluminum and zirconium metals on the surface 112 of the structure 111 in an electroplating process.
- metals such as yttrium and at least one of aluminum and zirconium metals
- the surface 112 of the structure 111 is immersed in a bath 404 comprising electrolytes of both yttrium and aluminum, and the electroplating conditions, such as the voltage, electrolyte composition and concentration, and temperature, are set such that a mixture of both yttrium and aluminum are plated out simultaneously on the surface 112 of the structure 111 , as shown in FIG. 6 b .
- the structure 111 and layer 121 are annealed to form the integral surface coating 117 having improved corrosion resistance, as shown in FIG. 2 .
- the co-deposited layer 121 comprises substantially the entire coating 117 .
- One or more other layers of materials, such as layers of yttrium and aluminum, can also be electroplated on the structure 111 in addition to the co-deposited layer.
- a co-deposited layer 121 comprising first and second concentration gradients of first and second materials can be formed by varying the electroplating conditions to provide a gradient co-deposition of one or more of metals, such as yttrium and at least one of aluminum and zirconium, on the surface 112 of the component 114 .
- the gradient co-deposition of the metals provides a gradually varying concentration of the metals through a thickness of the coating 117 .
- the electroplating conditions can be selected to electroplate aluminum at the surface 112 of the structure 111 , and to gradually increase the amount of yttrium plated onto the structure 111 while decreasing the amount of electroplated aluminum as the thickness of the coating 117 increases.
- This provides opposing concentration gradients of yttrium and aluminum, with a first concentration of yttrium at the surface 112 of the structure that is lower than a second concentration of yttrium at the surface 113 of the coating 117 , and a first concentration of aluminum at the surface 112 of the structure 111 that is higher than a second concentration of aluminum at the surface 113 of the coating 117 .
- the composition of the coating 117 may vary smoothly from the underlying structure 111 through the thickness of the coating, thereby providing a coating 117 that is integral with the underlying structure 111 and that provides improved corrosion resistance.
- the concentration of yttrium-containing electrolytes in the electroplating bath solution is gradually increased with respect to the concentration of the aluminum-containing electrolytes as the coating thickness increases. For example, more yttrium-containing electrolytes can be added to the bath solution as the thickness of the coating increases.
- the amount of aluminum plated on the structure 111 can be decreased with increasing thickness of the coating 117 by, for example, allowing the aluminum-containing electrolytes in the electroplating bath to be gradually used up (plated out) until there are few or no aluminum-containing electrolytes remaining in the bath 403 .
- fresh electrolyte solution can be continuously provided to the electroplating bath, the fresh solution comprising increasingly higher concentrations of yttrium-containing electrolyte and lower concentrations of aluminum-containing electrolyte, until a coating having the desired thickness and composition is formed.
- Other electroplating conditions that can be varied to provide a compositional gradient can include the bias voltage and the pH of the bath solution.
- the coating 117 may comprise yttrium-containing species deposited by electroplating, and zirconium-containing species that are deposited by another method, such as plasma spraying.
- the coating 117 comprises partially stabilized zirconium oxide deposited by plasma spraying.
- the coating 117 can also comprise alternating layers 119 , 120 deposited by electroplating and non-electroplating means.
- the corrosion resistant component 114 having the integral surface coating 117 may be provided in an apparatus 102 suitable for processing a substrate 104 , an embodiment of which is shown in FIG. 1 .
- the apparatus 102 comprises a process chamber 106 having a wall 107 , such as an enclosure wall 103 , which may comprise a ceiling 118 , sidewalls 114 , and a bottom wall 116 that enclose a process zone 108 .
- the wall 107 may also comprise a chamber wall liner 105 that lines at least a portion of the enclosure wall 103 about the process zone 108 .
- process gas is introduced into the chamber 106 through a gas supply 130 that includes a process gas source 138 and a gas distributor 137 .
- the gas distributor 137 may comprise one or more conduits 136 having one or more gas flow valves 134 , and one or more gas outlets 142 around a periphery of a substrate support 110 having a substrate receiving surface 180 .
- the gas distributor 130 may comprise a showerhead gas distributor (not shown). Spent process gas and etchant byproducts are exhausted from the chamber 106 through an exhaust 144 which may include a pumping channel 170 that receives spent process gas from the process zone, a throttle valve 135 to control the pressure of process gas in the chamber 106 , and one or more exhaust pumps 152 .
- the process gas may be energized by a gas energizer 154 that couples energy to the process gas in the process zone 108 of the chamber 106 .
- the gas energizer 154 comprises process electrodes that are powered by a power supply to energize the process gas.
- the process electrodes may include an electrode that is in a wall, such as a sidewall 114 or ceiling 118 of the chamber 106 , which may be capacitively coupled to another electrode, such as an electrode in the support 110 below the substrate 104 .
- the gas energizer 154 may comprise an antenna comprising one or more inductor coils about the chamber 106 .
- the gas energizer 154 may comprise a microwave source and waveguide to activate the process gas by microwave energy in a remote zone upstream from the chamber 106 .
- the process chamber 106 is evacuated and maintained at a predetermined sub-atmospheric pressure though an exhaust port 171 in the chamber.
- the substrate 104 is then provided on the support 110 by a substrate transport 101 , such as for example, a robot arm and a lift pin system.
- the substrate support 110 may also comprise one or more rings 109 that at least partially surround a periphery of the substrate 104 to secure the substrate 104 on the support 110 , or to otherwise aid in processing the substrate 104 , for example by focusing energetic plasma species onto the substrate 104 .
- the gas energizer 154 then energizes the gas to provide an energized gas in the process zone 108 to process the substrate 104 by coupling RF or microwave energy to the gas.
- the coating may comprise other suitable components, such as other metals without deviating from the scope of the present invention.
- the underlying structure 111 may form portions of chamber components 114 other than those specifically mentioned, as would be apparent to those of ordinary skill in the art.
- the terms below, above, bottom, top, up, down, first and second and other relative or positional terms are shown with respect to the exemplary embodiments in the figures and are interchangeable. Therefore, the appended claims should not be limited to the descriptions of the preferred versions, materials, or spatial arrangements described herein to illustrate the invention.
Abstract
Methods of fabricating a chamber component capable of being exposed to a plasma in a process chamber includes: providing a component structure composed of metal; immersing the surface of the component structure in an electroplating bath comprising first metal electrolyte species and second metal electrolyte species; forming a cathode by connecting the component structure to a negative terminal of a voltage source; immersing in the electroplating bath, an anode comprising an inert material or material to be electroplated, and connecting the anode to a positive terminal of the voltage source; and electroplating a layer having a concentration gradient of the first metal, second metal, or both.
Description
- This application is a divisional of U.S. patent application Ser. No. 12/151,842, entitled “Process Chamber Component Having Electroplated Yttrium Containing Coating”, filed May 8, 2008, which is a continuation of U.S. Pat. No. 7,371,476, entitled “Process Chamber Component Having Electroplated Yttrium Containing Coating,” filed on Jan. 8, 2002, which is a Continuation-in-part of U.S. Pat. No. 6,942,929, entitled “Process Chamber Having Yttrium-Aluminum Coating,” filed on Jan. 8, 2002, all to Han et al. and assigned to Applied Materials, Inc., and all of which are incorporated herein by reference and in their entirety.
- The present invention relates to a substrate processing chamber component and methods of manufacturing the same.
- In processing of a substrate in a process chamber, as in the manufacture of integrated circuits and displays, the substrate is typically exposed to energized gases that are capable of, for example, etching or depositing material on the substrate. The energized gases can also be provided to clean surfaces of the chamber. However, the energized gases can often comprise corrosive halogen-containing gases and other energized species that can erode components of the chamber, such as the chamber enclosure wall. For example, chamber components made of aluminum can chemically react with energized halogen-containing gases to form AlCl3 or AlF3, thereby corroding the components. The corroded portions of the components can flake off and contaminate the substrate, which reduces the substrate yield. Thus, the corroded components must often be replaced or removed from the chamber and cleaned, resulting in undesirable chamber downtime.
- The corrosion resistance of a chamber component can be improved by forming a coating of a corrosion resistant material over surfaces of component that are susceptible to erosion, such as surfaces that would otherwise be exposed to the energized gas. The corrosion resistant coating can be formed by methods such as plasma spraying or thermal spraying coating material onto the surface of an underlying structure of the component. For example, a coating of aluminum oxide can be plasma sprayed onto the surface of an aluminum chamber wall to form a coating that exhibits improved corrosion resistance.
- However, while such coatings improve the corrosion resistance of the chamber components, the components having the coatings can exhibit other problems during chamber processes. For example, thermal expansion mismatch between the coating and underlying component structure can lead to stresses at the interface between the coating and underlying structure that causes the coating to flake off the underlying structure, thereby exposing the underlying structure to the corrosive energized gas. The particles of loose coating material can also deposit on and contaminate the substrates being processed in the chamber. The thermal expansion mismatch problem is further exacerbated if there is frequent thermal cycling between or during substrate processing steps.
- Thus, there is a need for a chamber and chamber components that exhibit improved corrosion or erosion resistance to energized gases. There is a further need for durable chamber components that are not easily susceptible to flaking off during operation of the chamber, especially when the chamber is subjected to thermal cycling.
- Methods of fabricating a chamber component capable of being exposed to a plasma in a process chamber are provided. In one embodiment, the method includes: providing a component structure composed of metal; immersing the surface of the component structure in an electroplating bath comprising first metal electrolyte species and second metal electrolyte species; forming a cathode by connecting the component structure to a negative terminal of a voltage source; immersing in the electroplating bath, an anode comprising an inert material or material to be electroplated, and connecting the anode to a positive terminal of the voltage source; and varying the concentration of one or more of the first and second metal electrolyte species in the electroplating bath to electroplate a layer comprising a concentration gradient of the first metal, second metal, or both.
- In another embodiment, a plasma chamber component is fabricated by: providing a component structure composed of metal; immersing the surface of the component structure in an electroplating bath to serve as a cathode, the electroplating bath comprising (i) first metal electrolyte species consisting of yttrium-containing species, and (ii) second metal electrolyte species comprising aluminum-containing species; immersing an anode in the electroplating bath, the anode comprising an inert material or material to be electroplated; applying a voltage across the component structure and the anode; and varying the voltage applied across the component structure and the anode, to electroplate a layer comprising a concentration gradient of the first metal, second metal, or both.
- In a further embodiment, a plasma chamber component is fabricated by: providing a component structure composed of metal; immersing the surface of the component structure in an electroplating bath to serve as a cathode, the electroplating bath comprising (i) first metal electrolyte species consisting of yttrium-containing species, and (ii) second metal electrolyte species comprising aluminum-containing species; immersing an anode in the electroplating bath, the anode comprising an inert material or material to be electroplated; applying a voltage across the component structure and the anode; and varying the pH of the electroplating bath to electroplate a layer comprising a concentration gradient of the first metal, second metal, or both.
- These and other features, aspects, and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings which illustrate examples of the invention, where:
-
FIG. 1 is a schematic sectional side view of a version of an embodiment of a process chamber according to the present invention; -
FIG. 2 is a partial sectional schematic side view of a chamber component comprising an integral surface coating comprising yttrium-containing species; -
FIG. 3 is a schematic sectional side view of an electroplating apparatus; -
FIG. 4 is a schematic sectional side view of an annealer; -
FIG. 5 a is a flow chart of an embodiment of a process for electroplating layers comprising yttrium and aluminum on a surface of a component and annealing the layers to form an integral surface coating; -
FIG. 5 b is a flow chart of an embodiment of a process for electroplating a layer comprising a mixture of yttrium and aluminum on the surface of a component and annealing the layer to form an integral surface coating; -
FIG. 6 a is a partial sectional schematic side view of a chamber component comprising a coating having first and second electroplated layers; -
FIG. 6 b is a partial sectional schematic side view of a chamber component comprising a coating having an electroplated layer comprising a mixture of yttrium-containing and other species. - The corrosion resistance of a
chamber component 114 is improved by providing anintegral surface coating 117 comprising yttrium-containing species. Theintegral surface coating 117 is provided to protect thesurfaces 115 ofcomponents 114 that are exposed to energized gas plasmas, high temperatures, corrosive gases, and/or erosive sputtering species in theprocess zone 108 of a process chamber, or that are otherwise susceptible to erosion. For example, thecomponent 114 having theintegral surface coating 117 can comprise at least a portion or structure of one or more of achamber wall 107,chamber liner 105,substrate support 110,gas supply 130,gas energizer 154,gas exhaust 144, andsubstrate transport 101. For example, in one version, thecomponent 114 having theintegral surface coating 117 comprises a portion of thechamber liner 105, as shown inFIG. 1 . - The
integral surface coating 117 covers at least a portion of anunderlying structure 111 of thecomponent 114 and forms a unitary and continuous structure that is absent a discrete and sharp crystalline boundary therebetween, as schematically illustrated inFIG. 2 with a dotted line. In one version, the integral surface coating is formed in-situ from the surface of thecomponent 114 using the underlying component material. By “growing” thesurface coating 117 out of the underlying structure of which thecomponent 114 is fabricated, thesurface coating 117 is more strongly bonded to the underlying component material or structure than conventional coatings, such as plasma sprayed coatings, which have a discrete interface with the underlying component structure. The strongly bondedintegral surface coating 117 can better withstand thermal stresses and reduces flaking off of the coating and resultant contamination of thesubstrates 104. - The
integral surface coating 117 comprises yttrium-containing species that provide corrosion resistance in a processing environment, such as at least one of elemental yttrium and yttrium oxide (Y2O3). In particular, oxidized yttrium species improves corrosion resistance, and thus, the presence of these species in thecoating 117 is desirable. Thesurface coating 117 can also comprise other corrosion resistant species in combination with the yttrium-containing species. For example, thecoating 117 can comprise corrosion resistant species comprising aluminum-containing species, such as elemental aluminum and aluminum oxide. Thecoating 117 can also comprise yttrium-aluminum alloys and compounds, such as a yttrium-aluminum compound having a predefined stoichiometric ratio of yttrium oxide and aluminum oxide, as in yttrium aluminum garnet (YAG). - In another version, the
coating 117 comprises zirconium-containing species in addition to the yttrium-containing species, such as for example, elemental zirconium or zirconium oxide. The combination of the yttrium-containing and zirconium-containing material can be tailored to provide partially stabilized zirconia (PSZ) or tetragonal zirconia polycrystals (TZP). PSZ comprises zirconia polymorphs, such as cubic and metastable tetragonal ZrO2, and is obtained by adding a controlled amount of cubic phase-forming stabilizer oxide material, such as yttrium oxide. The addition of stabilizer to zirconia forces the structure into a tetragonal phase at temperatures higher than 1,000° C., and a mixture of cubic phase and monoclinic (or tetragonal) phases at lower temperatures. The partially stabilized zirconia is also called tetragonal zirconia polycrystal (TZP). Typically, PSZ comprises at least about 3 wt % of MgO, 2 to 6 wt % of CaO, or 3 to 9 wt % of Y2O3. PSZ is a transformation-toughened material because of microcracks and induced stress phenomena. Microcracks, which occur due to the difference in thermal expansion between the cubic, and monoclinic or tetragonal phase, dissipate the energy of propagating cracks. Induced stress arises from the tetragonal-to-monoclinic transformation. The presence of the cubic matrix provides a compressive force that maintains the tetragonal phase. Energy from a propagating crack causes a transition from the metastable tetragonal to the stable monoclinic phase to slow or stop propagation of the cracks. The zirconium oxide can also form a zirconia dispersion toughened ceramic (ZTC) in which tetragonal zirconia is dispersed in another ceramic, such as aluminum oxide or yttrium oxide, to toughen the ceramic. - The
coating 117 can also comprise a concentration gradient of yttrium-containing species through a thickness of thecoating 117. In one version, the composition of thecoating 117 gradually varies from the coating surface to the underlying interface. For example, thecoating 117 can comprise a concentration gradient in which the concentration of a species varies so that is matches the composition of the underlying structure, and gradually changes with thickness to reach a desirable erosion resistant stoichiometric composition at the coating surface. The matching composition of the coating to theunderlying structure 111 allows the coating to bond well to theunderlying structure 111, while the surface composition is tailored to provide better corrosion or other resistance. In one version, the concentration gradient provides a first concentration of yttrium-containing species in a first region of thecoating 117, such as at thesurface 113 of thecoating 117, and a second concentration in a second region, such as towards thesurface 112 of theunderlying structure 111 that is lower than the first. For example, thecoating 117 can comprise a concentration gradient of one or more of elemental yttrium, yttrium oxide, and yttrium aluminum oxide that decreases the concentration of the yttrium-containing species from a first concentration at thesurface 113 of thecoating 117, to a second concentration at thesurface 112 of theunderlying structure 111, without forming discrete boundaries regions in thecoating 117, and at a gradual rate throughout a thickness of thecoating 117. - The
surface coating 117 can also comprise a second concentration gradient of a second species, such as aluminum or zirconium-containing species, comprising at least one of elemental aluminum, elemental zirconium, aluminum oxide and zirconium oxide. The second concentration gradient can increase or decrease with the first concentration gradient of yttrium-containing species, or can be substantially opposite the yttrium-containing species concentration gradient. In one version, the second concentration gradient provides an increase in a first concentration of an aluminum-containing species at thesurface 113 of thecoating 117, to a second concentration that is higher than the first at thesurface 112 of theunderlying structure 111. The resulting structure provides enhanced bonding to theunderlying structure 111 while also providing improved corrosion resistance. - The composition and thickness of the
integral surface coating 117 is selected to enhance its resistance to corrosion and erosion, or other detrimental effects. For example, a thickerintegral surface coating 117 may provide a more substantial barrier to corrosion of thechamber component 114, while a thinner coating is more suitable for thermal shock resistance. Theintegral surface coating 117 may even be formed such that the oxidized species extend throughout the depth of the component or just on its surface. A suitable thickness of the oxidized species in theintegral surface coating 117 may be, for example, from about 12 micrometers (0.5 mils) to about 203 micrometers (8 mils), or even from about 25 micrometers (1 mil) to about 102 micrometers (4 mils.) - The
component 114 having theintegral surface coating 117 can be formed by electroplating yttrium metal onto thesurface 112 of anunderlying structure 111 and subsequently annealing the coating andunderlying structure 111. One or more of the other corrosion resistant species, such as aluminum and zirconium metals, can also be electroplated onto thestructure 111. Electroplating of the metals provides a layer that is well bonded to theunderlying surface 112 and protects theunderlying surface 112 from corrosion. Annealing thestructure 111 and electroplated metals diffuses the electroplated metals andunderlying structure 111 into one another to provide a unitary component structure. - The metals can be electroplated onto the
structure 111 by reducing one or more of yttrium, aluminum and zirconium-containing species to their elemental metal state at thesurface 112 of thestructure 111. In the electroplating process, thesurface 112 of thecomponent 114 to be electroplated serves as a cathode and is connected to anegative terminal 401 of avoltage source 400, as shown for example inFIG. 3 . Thesurface 112 is immersed in anelectroplating bath 403 comprising, for example, an aqueous solution having one or more yttrium, aluminum and zirconium-containing electrolytes dissolved therein. Ananode 404 connected to thepositive terminal 402 of the voltage source is also immersed in thebath 403, the anode comprising an inert material or even the material to be electroplated. Application of a bias voltage to thecathode 114 andanode 404 from thevoltage source 400 builds up a negative charge on thesurface 112 of thestructure 111, attracting the charged electrolyte species in the solution, which are then reduced to their elemental form at thesurface 112. In other words, the metals are “plated out” onto thesurface 112 of thestructure 111. - The electroplating conditions, such as the concentration and composition of the electrolytes, the voltage applied, the pH of the bath solution and the temperature may be selected to provide electroplated layers having the desired composition and structure. Suitable yttrium containing electrolytes can comprise, for example, one or more of yttrium bromide, yttrium chloride, yttrium fluoride, yttrium nitrate, yttrium perchlorate, yttrium carbonate, yttrium sulfate, yttrium hydroxide, yttrium iodate and yttrium acetate. Aluminum containing electrolytes can comprise, for example, one or more of aluminum chloride, aluminum bromide, aluminum fluoride, and aluminum hydroxide. Zirconium containing electrolytes can comprise, for example, one or more of zirconium nitrate, zirconium silicate, zirconium sulfate and zirconium citrate. In addition or as an alternative to an aqueous (water-based) bath, the bath solution can comprise an organic solvent, such as for example dimethylformamide (DMF), dimethylsulfoxide (DMSO), dimethoxyethane (DME), and tetrahydrofuran (THF). Other suitable electroplating conditions, such as different plating bath compositions and other electrolytes can also be used.
- In one version, the metals are electroplated onto the
surface 112 of anunderlying structure 111 that comprises a material that is similar to the electroplated metals, such as for example one or more of yttrium, aluminum and zirconium containing materials. By electroplating materials onto astructure 111 having a similar composition, the electroplated metals can be “grown” on thesurface 112 of theunderlying structure 111 to form a strongly bondedcoating 117 without a discrete boundary between thecoating 117 andunderlying structure 111. For example, theunderlying structure 111 can comprise an aluminum alloy that forms a strongly bonded continuous structure with an electroplated aluminum metal. The aluminum alloy is a mixture of aluminum with smaller amounts of one or more of copper, magnesium, manganese, gold, titanium, zinc, silicon and iron. In one version, the underlying structure comprises an aluminum alloy comprising at least about 90% by weight aluminum, and at most about 10% other metals. In another version, theunderlying structure 111 comprises a yttrium containing material, such as a yttrium-aluminum alloy. Theunderlying structure 111 can also comprise a zirconium-containing alloy. - After electroplating one or more layers of metals onto the
surface 112, thesurface 112 of thecomponent 114 and the electroplated material are annealed to form theintegral surface coating 117. In the annealing process, thecomponent 114 having the electroplated metals is heated to a temperature where the structure of the electroplated metals andunderlying structure 111 begins to break up, and materials from the electroplated metal andstructure 111 at least partially diffuse into each other. The intermixing of the materials between the electroplated layer andunderlying structure 111 forms a more integral andunitary coating 117 without a discrete boundary, thereby strengthening the corrosion resistance of thecoating 117. The mixture of the materials provides a gradual change in composition from thesurface 112 of theunderlying structure 111 to thesurface 113 of thecoating 117 that resists flaking of thecoating 117 and reduces thermal mismatch problems between theunderlying structure 111 andcoating 117. The annealing process can also be repeated a desired number of times to achieve intermixing between the electroplated materials andunderlying structure 111. - Furthermore, by annealing the
coating 117 in a oxygen containing atmosphere, corrosion resistant oxides of one or more of yttrium, aluminum and zirconium can be formed in the electroplatedcoating 117. For example, thecoating 117 can be annealed in the presence of one or more of O2, O3 and H2O to form oxides that show resistance to erosion by energized gases. The heat provided during the annealing process also facilitates the oxidation of the coating materials by speeding up the oxidation reaction. The oxidized species formed by annealing thecomponent 114 can comprise one or more of as Y2O3 and Al2O3, as well as oxidized yttrium aluminum compounds, such as yttrium aluminum garnet (YAG.) Other oxidized species such as zirconium oxide (ZrO2) in various phases can also form, according to the composition of materials electroplated onto the structure. Also, because the oxygen containing atmosphere contacts thesurface 113 of thecoating 117, the annealing process results in a coating composition having a concentration gradient of oxidized species, with a greater concentration of oxidized species near thesurface 113 of thecoating 117, thus enhancing the corrosion resistance of thecoating 117. - A version of an
annealer 500 suitable for annealing thecoating 117 is illustrated inFIG. 4 . Typically, theannealer 500 comprises aheat source 510, such as an incoherent or coherent electromagnetic radiation source, that is capable of heating thecomponent 114 to a suitable temperature for annealing. For example, theannealer 500 may heat thecomponent 114 to a temperature of at least about 600° C., such as for example, at least about 900° C. In the embodiment shown inFIG. 4 , theannealer 500 is a rapidthermal annealer 505 comprising aheat source 510 that includestungsten halogen lamps 515 to generate radiation and areflector 520 to reflect the radiation onto thecomponent 114. A fluid 525, such as air or water is flowed along theheat source 510 to regulate the temperature of theheat source 510. In one version, aquartz plate 530 is provided between theheat source 510 and thecomponent 114 to separate the fluid from thecomponent 114. The rapidthermal annealer 505 may further comprise atemperature monitor 540 to monitor the temperature of thecomponent 114. In one embodiment, thetemperature monitor 540 comprises anoptical pyrometer 545 that analyzes radiation emitted by thecomponent 114 to determine a temperature of thecomponent 114. -
FIG. 5 a illustrates an embodiment of an electroplating and annealing method of chamber component manufacture. In this embodiment, achamber component 114 comprising anunderlying structure 111 is formed from a metal or an alloy, such as an aluminum alloy. Afirst layer 119 comprising a first material, such as aluminum, is electroplated onto thesurface 112 of thestructure 111. After thefirst layer 119 has been electroplated, asecond layer 120 comprising a second material, such as yttrium, is electroplated onto thesurface 112 of thestructure 111. The first and second layers are then annealed to form theintegral surface coating 117. - The
coating 117 having the first andsecond layers surface 112 of theunderlying structure 111 to electroplating conditions that result in selective plating of a desired material. For example, thesurface 112 can be exposed to a bath comprising the desired first material present as an electrolyte in the solution and substantially absent the second material, to form afirst layer 119 comprising the desired first material. Once thefirst layer 119 has been formed, thesurface 112 is exposed to a bath comprising the desired second material, and substantially absent the first material, to form thesecond layer 120.FIG. 6 a shows theintegral surface coating 117 formed by electroplating the first andsecond layers surface 112 is exposed to conditions to electroplate afirst layer 119 comprising aluminum, and thereafter exposed to conditions to electroplate asecond layer 120 comprising yttrium. The electroplating conditions can alternatively be selected to electroplate afirst layer 119 comprising yttrium, and asecond layer 120 comprising aluminum. Electroplating conditions can be further selected to electroplate one or more of afirst layer 119 andsecond layer 120 comprising zirconium. The layers may also be alternated a desired number of times to achieve acoating 117 having the desired composition. - In one version of an electroplating process suitable for the formation of the first and
second layers first layer 119 comprising aluminum is electroplated onto thesurface 112 by immersing thesurface 112 in an aqueous solution comprising, for example, one or more of aluminum chloride, aluminum bromide, aluminum fluoride and aluminum hydroxide. A suitable bias voltage is applied to thesurface 112 to form thelayer 119 of aluminum metal. Asecond layer 120 comprising yttrium is then plated over thefirst layer 119 by immersing the surface of thefirst layer 119 in an aqueous solution comprising, for example, one or more of yttrium bromide, yttrium chloride, yttrium fluoride, yttrium nitrate, yttrium perchlorate, yttrium carbonate, yttrium sulfate, yttrium hydroxide, yttrium iodate and yttrium acetate, and applying a suitable bias voltage to bias thesurface 112 and form thelayer 120 of yttrium metal. Suitable concentrations of the aluminum and yttrium-containing electrolytes in the solutions may be, for example, from about 0.1 mM to about 50 M, and a suitable bias voltage for depositing thelayers - The
coating 117 having the first andsecond layers FIG. 4 , to provide the unitary coating structure, as shown inFIG. 2 , and to form corrosion resistant oxides. Annealing of thelayers layers coating 117. The annealing of thelayers coating 117 that improves bonding to theunderlying structure 111 and enhances corrosion resistance. - Yet another embodiment of an electroplating and annealing method of chamber component manufacture is illustrated in the flow chart of
FIG. 5 b. In this embodiment, achamber component 114 comprises anunderlying structure 111 formed from a metal or an alloy. Alayer 121 comprising a mixture of species, such as a mixture of aluminum and yttrium, is then electroplated onto thesurface 112 of thecomponent 114. The electroplatedlayer 121 is annealed to form theintegral surface coating 117 and to provide corrosion resistant oxidized species. - The
layer 121 comprising the mixture of species is formed by co-depositing metals such as yttrium and at least one of aluminum and zirconium metals on thesurface 112 of thestructure 111 in an electroplating process. For example, to form aco-deposited layer 121 of yttrium and aluminum, thesurface 112 of thestructure 111 is immersed in abath 404 comprising electrolytes of both yttrium and aluminum, and the electroplating conditions, such as the voltage, electrolyte composition and concentration, and temperature, are set such that a mixture of both yttrium and aluminum are plated out simultaneously on thesurface 112 of thestructure 111, as shown inFIG. 6 b. Following deposition of theco-deposited layer 121 comprising the mixture of materials, thestructure 111 andlayer 121 are annealed to form theintegral surface coating 117 having improved corrosion resistance, as shown inFIG. 2 . In one version, theco-deposited layer 121 comprises substantially theentire coating 117. One or more other layers of materials, such as layers of yttrium and aluminum, can also be electroplated on thestructure 111 in addition to the co-deposited layer. - In one version, a
co-deposited layer 121 comprising first and second concentration gradients of first and second materials can be formed by varying the electroplating conditions to provide a gradient co-deposition of one or more of metals, such as yttrium and at least one of aluminum and zirconium, on thesurface 112 of thecomponent 114. The gradient co-deposition of the metals provides a gradually varying concentration of the metals through a thickness of thecoating 117. In one version, the electroplating conditions can be selected to electroplate aluminum at thesurface 112 of thestructure 111, and to gradually increase the amount of yttrium plated onto thestructure 111 while decreasing the amount of electroplated aluminum as the thickness of thecoating 117 increases. This provides opposing concentration gradients of yttrium and aluminum, with a first concentration of yttrium at thesurface 112 of the structure that is lower than a second concentration of yttrium at thesurface 113 of thecoating 117, and a first concentration of aluminum at thesurface 112 of thestructure 111 that is higher than a second concentration of aluminum at thesurface 113 of thecoating 117. By providing opposing first and second composition gradients, the composition of thecoating 117 may vary smoothly from theunderlying structure 111 through the thickness of the coating, thereby providing acoating 117 that is integral with theunderlying structure 111 and that provides improved corrosion resistance. - In one version of forming a
coating 117 comprising opposing gradient concentrations of yttrium and aluminum-containing species, the concentration of yttrium-containing electrolytes in the electroplating bath solution is gradually increased with respect to the concentration of the aluminum-containing electrolytes as the coating thickness increases. For example, more yttrium-containing electrolytes can be added to the bath solution as the thickness of the coating increases. The amount of aluminum plated on thestructure 111 can be decreased with increasing thickness of thecoating 117 by, for example, allowing the aluminum-containing electrolytes in the electroplating bath to be gradually used up (plated out) until there are few or no aluminum-containing electrolytes remaining in thebath 403. Also, fresh electrolyte solution can be continuously provided to the electroplating bath, the fresh solution comprising increasingly higher concentrations of yttrium-containing electrolyte and lower concentrations of aluminum-containing electrolyte, until a coating having the desired thickness and composition is formed. Other electroplating conditions that can be varied to provide a compositional gradient can include the bias voltage and the pH of the bath solution. - Furthermore, although electroplating methods may be suitable for the deposition of zirconium onto the
structure 111, other methods such as physical vapor deposition, plasma spraying, chemical vapor deposition, hot isostatic pressing, sintering, and ion vapor deposition can also be used. For example, thecoating 117 may comprise yttrium-containing species deposited by electroplating, and zirconium-containing species that are deposited by another method, such as plasma spraying. In one version, thecoating 117 comprises partially stabilized zirconium oxide deposited by plasma spraying. Thecoating 117 can also comprise alternatinglayers - The corrosion
resistant component 114 having theintegral surface coating 117 may be provided in anapparatus 102 suitable for processing asubstrate 104, an embodiment of which is shown inFIG. 1 . Generally, theapparatus 102 comprises aprocess chamber 106 having awall 107, such as anenclosure wall 103, which may comprise aceiling 118,sidewalls 114, and abottom wall 116 that enclose aprocess zone 108. Thewall 107 may also comprise achamber wall liner 105 that lines at least a portion of theenclosure wall 103 about theprocess zone 108. In operation, process gas is introduced into thechamber 106 through agas supply 130 that includes aprocess gas source 138 and agas distributor 137. Thegas distributor 137 may comprise one ormore conduits 136 having one or moregas flow valves 134, and one ormore gas outlets 142 around a periphery of asubstrate support 110 having asubstrate receiving surface 180. Alternatively, thegas distributor 130 may comprise a showerhead gas distributor (not shown). Spent process gas and etchant byproducts are exhausted from thechamber 106 through anexhaust 144 which may include apumping channel 170 that receives spent process gas from the process zone, athrottle valve 135 to control the pressure of process gas in thechamber 106, and one or more exhaust pumps 152. - The process gas may be energized by a
gas energizer 154 that couples energy to the process gas in theprocess zone 108 of thechamber 106. In one version, thegas energizer 154 comprises process electrodes that are powered by a power supply to energize the process gas. The process electrodes may include an electrode that is in a wall, such as asidewall 114 orceiling 118 of thechamber 106, which may be capacitively coupled to another electrode, such as an electrode in thesupport 110 below thesubstrate 104. Alternatively or additionally, thegas energizer 154 may comprise an antenna comprising one or more inductor coils about thechamber 106. In yet another version, thegas energizer 154 may comprise a microwave source and waveguide to activate the process gas by microwave energy in a remote zone upstream from thechamber 106. To process asubstrate 104, theprocess chamber 106 is evacuated and maintained at a predetermined sub-atmospheric pressure though anexhaust port 171 in the chamber. Thesubstrate 104 is then provided on thesupport 110 by asubstrate transport 101, such as for example, a robot arm and a lift pin system. Thesubstrate support 110 may also comprise one ormore rings 109 that at least partially surround a periphery of thesubstrate 104 to secure thesubstrate 104 on thesupport 110, or to otherwise aid in processing thesubstrate 104, for example by focusing energetic plasma species onto thesubstrate 104. Thegas energizer 154 then energizes the gas to provide an energized gas in theprocess zone 108 to process thesubstrate 104 by coupling RF or microwave energy to the gas. - Although exemplary embodiments of the present invention are shown and described, those of ordinary skill in the art may devise other embodiments which incorporate the present invention, and which are also within the scope of the present invention. For example, the coating may comprise other suitable components, such as other metals without deviating from the scope of the present invention. Also, the
underlying structure 111 may form portions ofchamber components 114 other than those specifically mentioned, as would be apparent to those of ordinary skill in the art. Furthermore, the terms below, above, bottom, top, up, down, first and second and other relative or positional terms are shown with respect to the exemplary embodiments in the figures and are interchangeable. Therefore, the appended claims should not be limited to the descriptions of the preferred versions, materials, or spatial arrangements described herein to illustrate the invention.
Claims (20)
1. A method of fabricating a chamber component capable of being exposed to a plasma in a process chamber, the method comprising:
(a) providing a component structure composed of metal;
(b) immersing the surface of the component structure in an electroplating bath comprising first metal electrolyte species and second metal electrolyte species;
(c) forming a cathode by connecting the component structure to a negative terminal of a voltage source;
(d) immersing in the electroplating bath, an anode comprising an inert material or material to be electroplated, and connecting the anode to a positive terminal of the voltage source; and
(e) varying the concentration of one or more of the first and second metal electrolyte species in the electroplating bath to electroplate a layer comprising a concentration gradient of the first metal, second metal, or both.
2. A method according to claim 1 wherein the first metal electrolyte species comprises yttrium-containing species.
3. A method according to claim 2 comprising providing an electroplating bath comprising a solution of one or more of yttrium bromide, yttrium chloride, yttrium fluoride, yttrium nitrate, yttrium perchlorate, yttrium carbonate, yttrium sulfate, yttrium hydroxide, yttrium iodide and yttrium acetate.
4. A method according to claim 3 comprising maintaining a concentration of yttrium-containing species in the electroplating bath of from about 0.1 mM to about 50 M.
5. A method according to claim 2 comprising electroplating the yttrium-containing species to form first metal comprising elemental yttrium, and annealing the elemental yttrium to form yttrium oxide.
6. A method according to claim 5 comprising annealing the elemental yttrium to a temperature of at least about 600° C.
7. A method according to claim 1 wherein the second metal electrolyte species comprises at least one of an aluminum-containing species and a zirconium-containing species.
8. A method according to claim 7 comprising providing an electroplating bath comprising a solution of one or more of aluminum chloride, aluminum bromide, aluminum fluoride, and aluminum hydroxide.
9. A method according to claim 7 comprising providing an electroplating bath comprising a solution of one or more of zirconium nitrate, zirconium silicate, zirconium sulfate and zirconium citrate.
10. A method according to claim 1 wherein (e) comprises varying the voltage applied by the voltage source.
11. A method according to claim 1 comprising maintaining a voltage that is sufficiently high to provide in the electroplating bath, a current density of from about 0.1 A/dm2 to about 100 A/dm2.
12. A method according to claim 1 wherein (e) comprises varying the pH of the electroplating bath.
13. A method according to claim 2 comprising electroplating the yttrium-containing species to form an electroplated coating having a thickness of from about 12 micrometers to about 203 micrometers.
14. A method of fabricating a plasma chamber component, the method comprising:
(a) providing a component structure composed of metal;
(b) immersing the surface of the component structure in an electroplating bath to serve as a cathode, the electroplating bath comprising (i) first metal electrolyte species consisting of yttrium-containing species, and (ii) second metal electrolyte species comprising aluminum-containing species;
(c) immersing an anode in the electroplating bath, the anode comprising an inert material or material to be electroplated;
(d) applying a voltage across the component structure and the anode; and
(e) varying the voltage applied across the component structure and the anode, to electroplate a layer comprising a concentration gradient of the first metal, second metal, or both.
15. A method according to claim 14 comprising electroplating the yttrium-containing species to form elemental yttrium, and annealing the elemental yttrium to form yttrium oxide.
16. A method according to claim 14 wherein (e) further comprises varying the pH of the electroplating bath.
17. A method of fabricating a plasma chamber component, the method comprising:
(a) providing a component structure composed of metal;
(b) immersing the surface of the component structure in an electroplating bath to serve as a cathode, the electroplating bath comprising (i) first metal electrolyte species consisting of yttrium-containing species, and (ii) second metal electrolyte species comprising aluminum-containing species;
(c) immersing an anode in the electroplating bath, the anode comprising an inert material or material to be electroplated;
(d) applying a voltage across the component structure and the anode; and
(e) varying the pH of the electroplating bath to electroplate a layer comprising a concentration gradient of the first metal, second metal, or both.
18. A method according to claim 17 wherein (e) further comprises varying the voltage applied across the component structure and the anode.
19. A method according to claim 17 comprising maintaining a concentration of yttrium-containing species in the electroplating bath of from about 0.1 mM to about 50 M.
20. A method according to claim 17 comprising electroplating the yttrium-containing species to form first metal comprising elemental yttrium, and annealing the elemental yttrium to form yttrium oxide.
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US13/372,435 US20120138472A1 (en) | 2002-01-08 | 2012-02-13 | Method of forming a process chamber component having electroplated yttrium containing coating |
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US13/368,255 Expired - Fee Related US9012030B2 (en) | 2002-01-08 | 2012-02-07 | Process chamber component having yttrium—aluminum coating |
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US11/982,039 Expired - Fee Related US8110086B2 (en) | 2002-01-08 | 2007-10-31 | Method of manufacturing a process chamber component having yttrium-aluminum coating |
US12/151,842 Expired - Fee Related US8114525B2 (en) | 2002-01-08 | 2008-05-08 | Process chamber component having electroplated yttrium containing coating |
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Cited By (19)
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US20160336149A1 (en) * | 2015-05-15 | 2016-11-17 | Applied Materials, Inc. | Chamber component with wear indicator |
WO2017040039A1 (en) * | 2015-08-31 | 2017-03-09 | Varian Semiconductor Equipment Associates, Inc. | Gas injection system for ion beam device |
US9624593B2 (en) | 2013-08-29 | 2017-04-18 | Applied Materials, Inc. | Anodization architecture for electro-plate adhesion |
US9663870B2 (en) | 2013-11-13 | 2017-05-30 | Applied Materials, Inc. | High purity metallic top coat for semiconductor manufacturing components |
WO2017155711A1 (en) * | 2016-03-11 | 2017-09-14 | Applied Materials, Inc. | Method for electrochemically grown yttria or yttrium oxide on semiconductor processing equipment |
US20170314125A1 (en) * | 2016-04-27 | 2017-11-02 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
US10141161B2 (en) | 2016-09-12 | 2018-11-27 | Varian Semiconductor Equipment Associates, Inc. | Angle control for radicals and reactive neutral ion beams |
US10186400B2 (en) | 2017-01-20 | 2019-01-22 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
US10233554B2 (en) | 2016-03-11 | 2019-03-19 | Applied Materials, Inc. | Aluminum electroplating and oxide formation as barrier layer for aluminum semiconductor process equipment |
US10407789B2 (en) | 2016-12-08 | 2019-09-10 | Applied Materials, Inc. | Uniform crack-free aluminum deposition by two step aluminum electroplating process |
US10443126B1 (en) | 2018-04-06 | 2019-10-15 | Applied Materials, Inc. | Zone-controlled rare-earth oxide ALD and CVD coatings |
US10676819B2 (en) | 2016-06-23 | 2020-06-09 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
US10858741B2 (en) | 2019-03-11 | 2020-12-08 | Applied Materials, Inc. | Plasma resistant multi-layer architecture for high aspect ratio parts |
US11008653B2 (en) | 2016-07-15 | 2021-05-18 | Applied Materials, Inc. | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
US11180847B2 (en) | 2018-12-06 | 2021-11-23 | Applied Materials, Inc. | Atomic layer deposition coatings for high temperature ceramic components |
US11261533B2 (en) | 2017-02-10 | 2022-03-01 | Applied Materials, Inc. | Aluminum plating at low temperature with high efficiency |
US11279656B2 (en) | 2017-10-27 | 2022-03-22 | Applied Materials, Inc. | Nanopowders, nanoceramic materials and methods of making and use thereof |
US11667575B2 (en) | 2018-07-18 | 2023-06-06 | Applied Materials, Inc. | Erosion resistant metal oxide coatings |
Families Citing this family (233)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7371467B2 (en) * | 2002-01-08 | 2008-05-13 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
US20080264564A1 (en) | 2007-04-27 | 2008-10-30 | Applied Materials, Inc. | Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas |
US20080213496A1 (en) * | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
US20060226003A1 (en) * | 2003-01-22 | 2006-10-12 | John Mize | Apparatus and methods for ionized deposition of a film or thin layer |
US7297247B2 (en) * | 2003-05-06 | 2007-11-20 | Applied Materials, Inc. | Electroformed sputtering target |
JP4891538B2 (en) * | 2004-11-04 | 2012-03-07 | 株式会社日立ハイテクノロジーズ | Load port |
US9659758B2 (en) * | 2005-03-22 | 2017-05-23 | Honeywell International Inc. | Coils utilized in vapor deposition applications and methods of production |
US20060278520A1 (en) * | 2005-06-13 | 2006-12-14 | Lee Eal H | Use of DC magnetron sputtering systems |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US8475625B2 (en) * | 2006-05-03 | 2013-07-02 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
US8440049B2 (en) | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
JP2008088912A (en) * | 2006-10-03 | 2008-04-17 | Tohoku Univ | Mechanical pump and its manufacturing method |
JP2008103403A (en) * | 2006-10-17 | 2008-05-01 | Tokyo Electron Ltd | Substrate mount table and plasma treatment apparatus |
US8097105B2 (en) | 2007-01-11 | 2012-01-17 | Lam Research Corporation | Extending lifetime of yttrium oxide as a plasma chamber material |
US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US7718559B2 (en) * | 2007-04-20 | 2010-05-18 | Applied Materials, Inc. | Erosion resistance enhanced quartz used in plasma etch chamber |
US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
US7696117B2 (en) * | 2007-04-27 | 2010-04-13 | Applied Materials, Inc. | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas |
US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US8367227B2 (en) | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
US8129029B2 (en) * | 2007-12-21 | 2012-03-06 | Applied Materials, Inc. | Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating |
US20090194414A1 (en) * | 2008-01-31 | 2009-08-06 | Nolander Ira G | Modified sputtering target and deposition components, methods of production and uses thereof |
US8066895B2 (en) * | 2008-02-28 | 2011-11-29 | Applied Materials, Inc. | Method to control uniformity using tri-zone showerhead |
JP4591631B2 (en) * | 2008-07-30 | 2010-12-01 | 日立金属株式会社 | Corrosion-resistant magnet and manufacturing method thereof |
US20100108263A1 (en) * | 2008-10-30 | 2010-05-06 | Applied Materials, Inc. | Extended chamber liner for improved mean time between cleanings of process chambers |
US20120006688A1 (en) * | 2009-03-18 | 2012-01-12 | Basf Se | Electrolyte and surface-active additives for the electrochemical deposition of smooth, dense aluminum layers from ionic liquids |
FR2948691B1 (en) * | 2009-07-30 | 2013-02-15 | Snecma | METHOD FOR MANUFACTURING A CERAMIC COATING LAYER COVERING A SUBSTRATE |
JP4894952B2 (en) * | 2009-09-10 | 2012-03-14 | トヨタ車体株式会社 | Hinge for vehicle door |
CN102456564A (en) * | 2010-10-29 | 2012-05-16 | 中芯国际集成电路制造(上海)有限公司 | Transformer-coupled plasma (TCP) window for etching cavity and etching cavity comprising same |
TWI477620B (en) * | 2011-01-27 | 2015-03-21 | Hon Hai Prec Ind Co Ltd | Housing and method for making the same |
TWI477621B (en) * | 2011-01-28 | 2015-03-21 | Hon Hai Prec Ind Co Ltd | Housing and method for making the same |
US9246024B2 (en) | 2011-07-14 | 2016-01-26 | International Business Machines Corporation | Photovoltaic device with aluminum plated back surface field and method of forming same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
US9090046B2 (en) | 2012-04-16 | 2015-07-28 | Applied Materials, Inc. | Ceramic coated article and process for applying ceramic coating |
US9604249B2 (en) | 2012-07-26 | 2017-03-28 | Applied Materials, Inc. | Innovative top-coat approach for advanced device on-wafer particle performance |
US9447365B2 (en) * | 2012-07-27 | 2016-09-20 | Applied Materials, Inc. | Enhanced cleaning process of chamber used plasma spray coating without damaging coating |
US9343289B2 (en) * | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
US20140272341A1 (en) * | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Thermal treated sandwich structure layer to improve adhesive strength |
US9865434B2 (en) | 2013-06-05 | 2018-01-09 | Applied Materials, Inc. | Rare-earth oxide based erosion resistant coatings for semiconductor application |
WO2014204598A1 (en) | 2013-06-17 | 2014-12-24 | Applied Materials, Inc. | Enhanced plasma source for a plasma reactor |
US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US9711334B2 (en) | 2013-07-19 | 2017-07-18 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based thin film coatings on process rings |
US9583369B2 (en) | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
US9725799B2 (en) | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
US10249475B2 (en) | 2014-04-01 | 2019-04-02 | Applied Materials, Inc. | Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation |
US9869013B2 (en) * | 2014-04-25 | 2018-01-16 | Applied Materials, Inc. | Ion assisted deposition top coat of rare-earth oxide |
US9976211B2 (en) | 2014-04-25 | 2018-05-22 | Applied Materials, Inc. | Plasma erosion resistant thin film coating for high temperature application |
US10669635B2 (en) * | 2014-09-18 | 2020-06-02 | Baker Hughes, A Ge Company, Llc | Methods of coating substrates with composite coatings of diamond nanoparticles and metal |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
KR20170070175A (en) * | 2014-10-15 | 2017-06-21 | 어플라이드 머티어리얼스, 인코포레이티드 | Corrosion resistant abatement system |
EP3012347B1 (en) | 2014-10-24 | 2018-12-05 | United Technologies Corporation | Nanoparticle formation mitigation in a deposition process |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US9828672B2 (en) | 2015-03-26 | 2017-11-28 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
US10032604B2 (en) | 2015-09-25 | 2018-07-24 | Applied Materials, Inc. | Remote plasma and electron beam generation system for a plasma reactor |
CN108431934A (en) * | 2015-12-22 | 2018-08-21 | 应用材料公司 | The corrosion-resistant coating of semiconductor processing equipment |
CA3009779C (en) * | 2016-02-16 | 2021-03-23 | Lumishield Technologies Incorporated | Electrochemical deposition of elements in aqueous media |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
CN109072432B (en) * | 2016-03-04 | 2020-12-08 | Beneq有限公司 | Plasma etching resistant film and method for producing same |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10755900B2 (en) | 2017-05-10 | 2020-08-25 | Applied Materials, Inc. | Multi-layer plasma erosion protection for chamber components |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
TWI791689B (en) | 2017-11-27 | 2023-02-11 | 荷蘭商Asm智慧財產控股私人有限公司 | Apparatus including a clean mini environment |
JP7214724B2 (en) | 2017-11-27 | 2023-01-30 | エーエスエム アイピー ホールディング ビー.ブイ. | Storage device for storing wafer cassettes used in batch furnaces |
US10760158B2 (en) * | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
WO2019142055A2 (en) | 2018-01-19 | 2019-07-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
TWI799494B (en) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11047035B2 (en) | 2018-02-23 | 2021-06-29 | Applied Materials, Inc. | Protective yttria coating for semiconductor equipment parts |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
SG11202008268RA (en) | 2018-03-19 | 2020-10-29 | Applied Materials Inc | Methods for depositing coatings on aerospace components |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
EP3784815A4 (en) | 2018-04-27 | 2021-11-03 | Applied Materials, Inc. | Protection of components from corrosion |
US11639547B2 (en) * | 2018-05-03 | 2023-05-02 | Applied Materials, Inc. | Halogen resistant coatings and methods of making and using thereof |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
JP2021529880A (en) | 2018-06-27 | 2021-11-04 | エーエスエム・アイピー・ホールディング・ベー・フェー | Periodic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
CN112292478A (en) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11009339B2 (en) | 2018-08-23 | 2021-05-18 | Applied Materials, Inc. | Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
CN113243040A (en) * | 2018-12-13 | 2021-08-10 | 朗姆研究公司 | Multi-layer coating for component parts of a workpiece processing chamber |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (en) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming device structure, structure formed by the method and system for performing the method |
TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
JP7268177B2 (en) | 2019-02-12 | 2023-05-02 | アプライド マテリアルズ インコーポレイテッド | Method for manufacturing chamber parts |
JP2020136678A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for filing concave part formed inside front surface of base material, and device |
JP2020136677A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Periodic accumulation method for filing concave part formed inside front surface of base material, and device |
KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
WO2020219332A1 (en) | 2019-04-26 | 2020-10-29 | Applied Materials, Inc. | Methods of protecting aerospace components against corrosion and oxidation |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
US11794382B2 (en) | 2019-05-16 | 2023-10-24 | Applied Materials, Inc. | Methods for depositing anti-coking protective coatings on aerospace components |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
KR20200141003A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system including a gas detector |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
US11697879B2 (en) | 2019-06-14 | 2023-07-11 | Applied Materials, Inc. | Methods for depositing sacrificial coatings on aerospace components |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TW202113936A (en) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (en) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | Liquid level sensor for chemical source container |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11466364B2 (en) | 2019-09-06 | 2022-10-11 | Applied Materials, Inc. | Methods for forming protective coatings containing crystallized aluminum oxide |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
TW202129060A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Substrate processing device, and substrate processing method |
KR20210043460A (en) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a photoresist underlayer and structure including same |
CN112652511B (en) * | 2019-10-12 | 2023-10-20 | 中微半导体设备(上海)股份有限公司 | Plasma etching device and edge ring therein |
KR20210045930A (en) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of Topology-Selective Film Formation of Silicon Oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
JP2021097227A (en) | 2019-12-17 | 2021-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method of forming vanadium nitride layer and structure including vanadium nitride layer |
KR20210080214A (en) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate and related semiconductor structures |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
CN115003857A (en) * | 2020-01-23 | 2022-09-02 | 朗姆研究公司 | Yttrium aluminum coatings for plasma processing chamber components |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
KR20210100010A (en) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for transmittance measurements of large articles |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (en) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for growing phosphorous-doped silicon layer and system of the same |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11661650B2 (en) | 2020-04-10 | 2023-05-30 | Applied Materials, Inc. | Yttrium oxide based coating composition |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
KR20210132576A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming vanadium nitride-containing layer and structure comprising the same |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
US11519066B2 (en) | 2020-05-21 | 2022-12-06 | Applied Materials, Inc. | Nitride protective coatings on aerospace components and methods for making the same |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
KR20230027281A (en) * | 2020-06-25 | 2023-02-27 | 램 리써치 코포레이션 | Matched chemical component bodies and coatings for semiconductor processing chambers |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
WO2022005696A1 (en) | 2020-07-03 | 2022-01-06 | Applied Materials, Inc. | Methods for refurbishing aerospace components |
TW202219628A (en) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
KR20220027026A (en) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | Method and system for forming metal silicon oxide and metal silicon oxynitride |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
KR20220053482A (en) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing vanadium metal, structure, device and a deposition assembly |
TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
KR20220076343A (en) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | an injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
CN117795641A (en) * | 2021-08-09 | 2024-03-29 | 朗姆研究公司 | Yttrium Aluminum Perovskite (YAP) based coatings for semiconductor process chamber components |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4777090A (en) * | 1986-11-03 | 1988-10-11 | Ovonic Synthetic Materials Company | Coated article and method of manufacturing the article |
US4888820A (en) * | 1988-12-06 | 1989-12-19 | Texas Instruments Incorporated | Stacked insulating film including yttrium oxide |
US5162295A (en) * | 1989-04-10 | 1992-11-10 | Allied-Signal Inc. | Superconducting ceramics by sequential electrodeposition of metals, followed by oxidation |
US5272120A (en) * | 1988-12-19 | 1993-12-21 | Mitutoyo Corporation | Block guage and method of marking ceramic material |
US5476837A (en) * | 1994-03-14 | 1995-12-19 | Midwest Research Institute | Process for preparing superconducting film having substantially uniform phase development |
US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
US20010003271A1 (en) * | 1999-12-10 | 2001-06-14 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
US6257366B1 (en) * | 1995-09-13 | 2001-07-10 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek | Exhaust device for a turbine engine |
US20020168466A1 (en) * | 2001-04-24 | 2002-11-14 | Tapphorn Ralph M. | System and process for solid-state deposition and consolidation of high velocity powder particles using thermal plastic deformation |
Family Cites Families (153)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3379575A (en) | 1965-09-13 | 1968-04-23 | Gen Motors Corp | Battery having a cover member for a plurality of vented battery caps |
US3665260A (en) * | 1970-06-01 | 1972-05-23 | Trw Inc | Alloy capacitor porous anodes |
US3754903A (en) * | 1970-09-15 | 1973-08-28 | United Aircraft Corp | High temperature oxidation resistant coating alloy |
US4244743A (en) * | 1979-04-23 | 1981-01-13 | United Technologies Corporation | Sulfur containing refractory for resisting reactive molten metals |
US4433004A (en) * | 1979-07-11 | 1984-02-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and a method for manufacturing the same |
US5445776A (en) * | 1980-10-20 | 1995-08-29 | Kabushiki Kaisha Kobe Seiko Sho | Method for producing high density sintered silicon nitride (Si3 N.sub.4 |
JPS58148129U (en) | 1982-03-30 | 1983-10-05 | 筧組建設株式会社 | framework scaffolding |
JPS59205468A (en) | 1983-05-10 | 1984-11-21 | Natl Res Inst For Metals | High temperature corrosion resistant material |
US5077141A (en) * | 1984-12-06 | 1991-12-31 | Avco Corporation | High strength nickel base single crystal alloys having enhanced solid solution strength and methods for making same |
US4897315A (en) * | 1985-10-15 | 1990-01-30 | United Technologies Corporation | Yttrium enriched aluminide coating for superalloys |
DE3543802A1 (en) | 1985-12-12 | 1987-06-19 | Bbc Brown Boveri & Cie | HIGH TEMPERATURE PROTECTIVE LAYER AND METHOD FOR THEIR PRODUCTION |
JPS62174377A (en) | 1986-01-24 | 1987-07-31 | Mitsubishi Heavy Ind Ltd | Turbine vane |
JPH0341493Y2 (en) | 1986-04-26 | 1991-08-30 | ||
US4910092A (en) * | 1986-09-03 | 1990-03-20 | United Technologies Corporation | Yttrium enriched aluminide coating for superalloys |
US4743493A (en) * | 1986-10-06 | 1988-05-10 | Spire Corporation | Ion implantation of plastics |
ES2008682B3 (en) | 1986-11-25 | 1989-08-01 | Battelle Memorial Institute | SILICON NITRIDE POWDER COMPOSITION REINFORCED WITH CRYSTALLINE SILICON CARBIDE FILAMENTS, AND ITS USE IN THE MANUFACTURE OF SINTERED PARTS. |
JPS63216943A (en) | 1987-03-03 | 1988-09-09 | Toho Kinzoku Kk | Electrode material |
NL8700844A (en) * | 1987-04-10 | 1988-11-01 | Philips Nv | CERAMIC TRANSPARENT MATERIAL, METHOD FOR MANUFACTURING SUCH MATERIAL AND HIGH-PRESSURE DISCHARGE LAMP INCLUDING SUCH MATERIAL. |
DE3740478C1 (en) * | 1987-11-28 | 1989-01-19 | Asea Brown Boveri | High temperature protective layer |
US4939308A (en) * | 1988-04-29 | 1990-07-03 | Allied-Signal Inc. | Method of forming crystallite-oriented superconducting ceramics by electrodeposition and thin film superconducting ceramic made thereby |
US5158653A (en) * | 1988-09-26 | 1992-10-27 | Lashmore David S | Method for production of predetermined concentration graded alloys |
JPH02159343A (en) | 1988-12-12 | 1990-06-19 | Toho Kinzoku Kk | Electrode material |
JPH02159344A (en) | 1988-12-12 | 1990-06-19 | Toho Kinzoku Kk | Electrode material |
US4933239A (en) * | 1989-03-06 | 1990-06-12 | United Technologies Corporation | Aluminide coating for superalloys |
US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
EP0456515B1 (en) * | 1990-05-10 | 1995-11-08 | Hitachi Chemical Co., Ltd. | Polyimides and thermosetting resin compositions containing the same |
US5205051A (en) * | 1990-08-28 | 1993-04-27 | Materials Research Corporation | Method of preventing condensation of air borne moisture onto objects in a vessel during pumping thereof |
US5244875A (en) * | 1991-05-06 | 1993-09-14 | Hauser Chemical Research, Inc. | Electroplating of superconductor elements |
US5470820A (en) * | 1991-05-06 | 1995-11-28 | Hauser Chemical Research, Inc. | Electroplating of superconductor elements |
JPH04333573A (en) | 1991-05-09 | 1992-11-20 | Canon Inc | Microwave plasma cvd apparatus |
JP2911673B2 (en) * | 1992-03-18 | 1999-06-23 | 健 増本 | High strength aluminum alloy |
US5880031A (en) * | 1992-06-25 | 1999-03-09 | Texas Instruments Incorporated | Method for vapor phase wafer cleaning |
US5366585A (en) * | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
JPH06236913A (en) | 1993-02-09 | 1994-08-23 | Toshiba Corp | Wafer fork |
KR100221983B1 (en) * | 1993-04-13 | 1999-09-15 | 히가시 데쓰로 | A treating apparatus for semiconductor process |
JP2972052B2 (en) | 1993-04-21 | 1999-11-08 | 太陽誘電株式会社 | Semiconductor porcelain and method of manufacturing the same |
JPH06310065A (en) | 1993-04-26 | 1994-11-04 | Nissin Electric Co Ltd | Ion source device |
NZ247940A (en) * | 1993-06-21 | 1995-05-26 | Grace W R & Co | Heat-shrinkable thermoplastics packaging film comprising at least two identical films |
US5498313A (en) * | 1993-08-20 | 1996-03-12 | International Business Machines Corp. | Symmetrical etching ring with gas control |
US5457895A (en) * | 1993-10-01 | 1995-10-17 | R. P. Scherer Corporation | Method of identifying freeze-dried dosage forms |
US5950645A (en) * | 1993-10-20 | 1999-09-14 | Verteq, Inc. | Semiconductor wafer cleaning system |
US5676205A (en) * | 1993-10-29 | 1997-10-14 | Applied Materials, Inc. | Quasi-infinite heat source/sink |
US5455119A (en) * | 1993-11-08 | 1995-10-03 | Praxair S.T. Technology, Inc. | Coating composition having good corrosion and oxidation resistance |
JP3308091B2 (en) * | 1994-02-03 | 2002-07-29 | 東京エレクトロン株式会社 | Surface treatment method and plasma treatment device |
US5798016A (en) * | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
US5680013A (en) * | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
US5534309A (en) * | 1994-06-21 | 1996-07-09 | Msp Corporation | Method and apparatus for depositing particles on surfaces |
GB9414858D0 (en) * | 1994-07-22 | 1994-09-14 | Baj Coatings Ltd | Protective coating |
GB9414859D0 (en) * | 1994-07-22 | 1994-09-14 | Baj Coatings Ltd | Protective coating |
DE9421671U1 (en) | 1994-08-26 | 1996-07-11 | Siemens Ag | Discharge chamber for a plasma etching system in semiconductor production |
US5753044A (en) * | 1995-02-15 | 1998-05-19 | Applied Materials, Inc. | RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
US5643394A (en) * | 1994-09-16 | 1997-07-01 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
US5746875A (en) | 1994-09-16 | 1998-05-05 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
DE19522525A1 (en) * | 1994-10-04 | 1996-04-11 | Kunze Concewitz Horst Dipl Phy | Method and device for fine cleaning of surfaces |
WO1996015284A1 (en) * | 1994-11-09 | 1996-05-23 | Cametoid Advanced Technologies Inc. | Method of producing reactive element modified-aluminide diffusion coatings |
US5445119A (en) * | 1994-12-09 | 1995-08-29 | Chrysler Corporation | Tappet and shim assembly for internal combustion engine |
US5624632A (en) * | 1995-01-31 | 1997-04-29 | Aluminum Company Of America | Aluminum magnesium alloy product containing dispersoids |
JP3521587B2 (en) | 1995-02-07 | 2004-04-19 | セイコーエプソン株式会社 | Method and apparatus for removing unnecessary substances from the periphery of substrate and coating method using the same |
US6396078B1 (en) * | 1995-06-20 | 2002-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
KR0166831B1 (en) * | 1995-12-18 | 1999-02-01 | 문정환 | Cleaning apparatus and method of semiconductor wafer |
KR0170214B1 (en) * | 1995-12-29 | 1999-03-30 | 김광호 | Wafer cleaning apparatus having an agitator |
US6095084A (en) * | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
US5824491A (en) * | 1996-05-17 | 1998-10-20 | Mercury Diagnostics, Inc. | Dry reagent test strip comprising benzidine dye precursor and antipyrine compound |
KR100187445B1 (en) * | 1996-06-05 | 1999-04-15 | 김광호 | Method and apparatus of rinsing wafer |
JP3261044B2 (en) | 1996-07-31 | 2002-02-25 | 京セラ株式会社 | Components for plasma processing equipment |
JP3619330B2 (en) | 1996-07-31 | 2005-02-09 | 京セラ株式会社 | Components for plasma process equipment |
JP3623054B2 (en) | 1996-08-28 | 2005-02-23 | 京セラ株式会社 | Components for plasma process equipment |
US5993594A (en) | 1996-09-30 | 1999-11-30 | Lam Research Corporation | Particle controlling method and apparatus for a plasma processing chamber |
FR2757181B1 (en) * | 1996-12-12 | 1999-02-12 | Snecma | PROCESS FOR PRODUCING A HIGH EFFICIENCY PROTECTIVE COATING AGAINST HIGH TEMPERATURE CORROSION FOR SUPERALLOYS, PROTECTIVE COATING OBTAINED BY THIS PROCESS AND PARTS PROTECTED BY THIS COATING |
US6120640A (en) | 1996-12-19 | 2000-09-19 | Applied Materials, Inc. | Boron carbide parts and coatings in a plasma reactor |
JPH10209354A (en) | 1997-01-16 | 1998-08-07 | Nippon Tungsten Co Ltd | Radiation member for semiconductor ceramic package |
US5948516A (en) | 1997-02-06 | 1999-09-07 | The Board Of Trustees Of The University Of Illinois | High-strength, flaw-tolerant, oxide ceramic composite |
US6447937B1 (en) * | 1997-02-26 | 2002-09-10 | Kyocera Corporation | Ceramic materials resistant to halogen plasma and components using the same |
JP3488373B2 (en) | 1997-11-28 | 2004-01-19 | 京セラ株式会社 | Corrosion resistant materials |
EP0875593B1 (en) * | 1997-04-30 | 2001-09-19 | Sumitomo Electric Industries, Ltd. | Aluminium alloy and its production process |
DE19719133C2 (en) | 1997-05-07 | 1999-09-02 | Heraeus Quarzglas | Quartz glass bell and process for its manufacture |
US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
JP3799139B2 (en) | 1997-07-09 | 2006-07-19 | 太平洋セメント株式会社 | Ceramic composite material |
US6306276B1 (en) * | 1997-10-08 | 2001-10-23 | Univ California | Aqueous electrodeposition of rare earth and transition metals |
US6379575B1 (en) | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
JP2959763B1 (en) * | 1998-01-13 | 1999-10-06 | 島田理化工業株式会社 | Wafer cleaning equipment |
JP3616243B2 (en) * | 1998-02-13 | 2005-02-02 | 関西電力株式会社 | Electrochemical vapor deposition apparatus and solid electrolyte film forming method using the same |
US5964928A (en) * | 1998-03-12 | 1999-10-12 | Natural Coating Systems, Llc | Protective coatings for metals and other surfaces |
US6517303B1 (en) * | 1998-05-20 | 2003-02-11 | Applied Komatsu Technology, Inc. | Substrate transfer shuttle |
JPH11335804A (en) | 1998-05-27 | 1999-12-07 | Mitsubishi Heavy Ind Ltd | Plasma spray coating of yttria-stabilized zirconia |
US6120606A (en) * | 1998-06-26 | 2000-09-19 | Acer Semiconductor Manufacturing Inc. | Gas vent system for a vacuum chamber |
US6123791A (en) * | 1998-07-29 | 2000-09-26 | Applied Materials, Inc. | Ceramic composition for an apparatus and method for processing a substrate |
US6182851B1 (en) * | 1998-09-10 | 2001-02-06 | Applied Materials Inc. | Vacuum processing chambers and method for producing |
JP2000096176A (en) | 1998-09-24 | 2000-04-04 | Sumitomo Electric Ind Ltd | Aluminum alloy and its production |
JP2000144292A (en) | 1998-10-30 | 2000-05-26 | Sumitomo Electric Ind Ltd | Production of aluminum alloy and aluminum alloy member |
JP2002529600A (en) * | 1998-11-06 | 2002-09-10 | シヴァク | Sputtering apparatus and method for high rate coating |
JP3706488B2 (en) | 1998-11-27 | 2005-10-12 | 京セラ株式会社 | Corrosion-resistant ceramic material |
JP3046288B1 (en) | 1998-12-28 | 2000-05-29 | 京セラ株式会社 | Components for semiconductor / liquid crystal manufacturing equipment |
US6383964B1 (en) * | 1998-11-27 | 2002-05-07 | Kyocera Corporation | Ceramic member resistant to halogen-plasma corrosion |
JP3550306B2 (en) | 1998-11-27 | 2004-08-04 | 京セラ株式会社 | Plasma resistant member and method of manufacturing the same |
KR100292075B1 (en) * | 1998-12-29 | 2001-07-12 | 윤종용 | Wafer processing device for semiconductor device manufacturing |
US6179150B1 (en) * | 1999-02-25 | 2001-01-30 | Richard D. Fogler | Support frame and cart for collapsible refuse bag |
JP2000313656A (en) | 1999-04-28 | 2000-11-14 | Taiheiyo Cement Corp | Corrosionproof ceramic material and corrosionproof member |
JP3756345B2 (en) | 1999-05-12 | 2006-03-15 | 住友大阪セメント株式会社 | Aluminum nitride-based sintered body, method for producing the same, and susceptor using the same |
US6287644B1 (en) * | 1999-07-02 | 2001-09-11 | General Electric Company | Continuously-graded bond coat and method of manufacture |
US6179976B1 (en) * | 1999-12-03 | 2001-01-30 | Com Dev Limited | Surface treatment and method for applying surface treatment to suppress secondary electron emission |
JP3510993B2 (en) * | 1999-12-10 | 2004-03-29 | トーカロ株式会社 | Plasma processing container inner member and method for manufacturing the same |
US6404615B1 (en) * | 2000-02-16 | 2002-06-11 | Intarsia Corporation | Thin film capacitors |
US6410471B2 (en) * | 2000-03-07 | 2002-06-25 | Shin-Etsu Chemical Co., Ltd. | Method for preparation of sintered body of rare earth oxide |
US6623595B1 (en) | 2000-03-27 | 2003-09-23 | Applied Materials, Inc. | Wavy and roughened dome in plasma processing reactor |
US6503575B1 (en) * | 2000-05-22 | 2003-01-07 | Praxair S.T. Technology, Inc. | Process for producing graded coated articles |
US6645585B2 (en) * | 2000-05-30 | 2003-11-11 | Kyocera Corporation | Container for treating with corrosive-gas and plasma and method for manufacturing the same |
WO2002020864A2 (en) | 2000-06-16 | 2002-03-14 | Applied Materials, Inc. | System and method for depositing high dielectric constant materials and compatible conductive materials |
JP3967093B2 (en) * | 2000-07-10 | 2007-08-29 | 東芝セラミックス株式会社 | Ceramic member and manufacturing method thereof |
US6509070B1 (en) * | 2000-09-22 | 2003-01-21 | The United States Of America As Represented By The Secretary Of The Air Force | Laser ablation, low temperature-fabricated yttria-stabilized zirconia oriented films |
JP4686846B2 (en) * | 2000-11-07 | 2011-05-25 | コニカミノルタホールディングス株式会社 | Protective film for polarizing plate, polarizing plate using the same, and display device |
US6805952B2 (en) | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
US6620520B2 (en) * | 2000-12-29 | 2003-09-16 | Lam Research Corporation | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
JP2002356387A (en) * | 2001-03-30 | 2002-12-13 | Toshiba Ceramics Co Ltd | Plasma proof member |
US7670688B2 (en) | 2001-06-25 | 2010-03-02 | Applied Materials, Inc. | Erosion-resistant components for plasma process chambers |
US20030029563A1 (en) * | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
US6942929B2 (en) | 2002-01-08 | 2005-09-13 | Nianci Han | Process chamber having component with yttrium-aluminum coating |
US7371467B2 (en) | 2002-01-08 | 2008-05-13 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
KR100446623B1 (en) * | 2002-01-30 | 2004-09-04 | 삼성에스디아이 주식회사 | Field emission display and manufacturing method thereof |
US8067067B2 (en) | 2002-02-14 | 2011-11-29 | Applied Materials, Inc. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
US7479304B2 (en) | 2002-02-14 | 2009-01-20 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
US20080213496A1 (en) | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
US6776873B1 (en) * | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
US20080264564A1 (en) | 2007-04-27 | 2008-10-30 | Applied Materials, Inc. | Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas |
US6789498B2 (en) | 2002-02-27 | 2004-09-14 | Applied Materials, Inc. | Elements having erosion resistance |
US6780523B2 (en) * | 2002-04-12 | 2004-08-24 | Eastman Chemical Company | Waterborne acetoacetate-functionalized alkyd coating compositions |
GB0213667D0 (en) * | 2002-06-14 | 2002-07-24 | Metcalfe Richard A | Trim for a wheel rim |
US7311797B2 (en) | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
US7446474B2 (en) | 2002-10-10 | 2008-11-04 | Applied Materials, Inc. | Hetero-junction electron emitter with Group III nitride and activated alkali halide |
US7086918B2 (en) | 2002-12-11 | 2006-08-08 | Applied Materials, Inc. | Low temperature process for passivation applications |
US6983892B2 (en) | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
US7618769B2 (en) | 2004-06-07 | 2009-11-17 | Applied Materials, Inc. | Textured chamber surface |
US20070079936A1 (en) | 2005-09-29 | 2007-04-12 | Applied Materials, Inc. | Bonded multi-layer RF window |
US20080003158A1 (en) | 2006-02-11 | 2008-01-03 | Applied Materials, Inc. | Methods and apparatus for pfc abatement using a cdo chamber |
KR101117450B1 (en) | 2006-03-09 | 2012-03-13 | 어플라이드 머티어리얼스, 인코포레이티드 | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
US7837838B2 (en) | 2006-03-09 | 2010-11-23 | Applied Materials, Inc. | Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus |
US7645710B2 (en) | 2006-03-09 | 2010-01-12 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
US20070209930A1 (en) | 2006-03-09 | 2007-09-13 | Applied Materials, Inc. | Apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
US8440049B2 (en) | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
US7479464B2 (en) | 2006-10-23 | 2009-01-20 | Applied Materials, Inc. | Low temperature aerosol deposition of a plasma resistive layer |
WO2008089168A2 (en) | 2007-01-19 | 2008-07-24 | Applied Materials, Inc. | Plasma immersion chamber |
US7718559B2 (en) | 2007-04-20 | 2010-05-18 | Applied Materials, Inc. | Erosion resistance enhanced quartz used in plasma etch chamber |
US7696117B2 (en) | 2007-04-27 | 2010-04-13 | Applied Materials, Inc. | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas |
US20080296354A1 (en) | 2007-05-31 | 2008-12-04 | Mark Crockett | Stainless steel or stainless steel alloy for diffusion bonding |
US8008166B2 (en) | 2007-07-26 | 2011-08-30 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
US8367227B2 (en) | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
JP5683063B2 (en) | 2007-09-05 | 2015-03-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Ceramic cover wafer of aluminum nitride or beryllium oxide |
US20090110807A1 (en) | 2007-10-25 | 2009-04-30 | Applied Materials, Inc. | Method for coating and apparatus |
US8129029B2 (en) | 2007-12-21 | 2012-03-06 | Applied Materials, Inc. | Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating |
US8043433B2 (en) | 2008-02-11 | 2011-10-25 | Applied Materials, Inc. | High efficiency electro-static chucks for semiconductor wafer processing |
US20090214825A1 (en) | 2008-02-26 | 2009-08-27 | Applied Materials, Inc. | Ceramic coating comprising yttrium which is resistant to a reducing plasma |
US20090302002A1 (en) | 2008-02-29 | 2009-12-10 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
US20090277874A1 (en) | 2008-05-09 | 2009-11-12 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
-
2004
- 2004-04-13 US US10/824,123 patent/US7371467B2/en not_active Expired - Fee Related
-
2007
- 2007-06-21 US US11/766,723 patent/US7833401B2/en not_active Expired - Fee Related
- 2007-10-31 US US11/982,039 patent/US8110086B2/en not_active Expired - Fee Related
-
2008
- 2008-05-08 US US12/151,842 patent/US8114525B2/en not_active Expired - Fee Related
-
2012
- 2012-02-07 US US13/368,255 patent/US9012030B2/en not_active Expired - Fee Related
- 2012-02-13 US US13/372,435 patent/US20120138472A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4777090A (en) * | 1986-11-03 | 1988-10-11 | Ovonic Synthetic Materials Company | Coated article and method of manufacturing the article |
US4888820A (en) * | 1988-12-06 | 1989-12-19 | Texas Instruments Incorporated | Stacked insulating film including yttrium oxide |
US5272120A (en) * | 1988-12-19 | 1993-12-21 | Mitutoyo Corporation | Block guage and method of marking ceramic material |
US5162295A (en) * | 1989-04-10 | 1992-11-10 | Allied-Signal Inc. | Superconducting ceramics by sequential electrodeposition of metals, followed by oxidation |
US5476837A (en) * | 1994-03-14 | 1995-12-19 | Midwest Research Institute | Process for preparing superconducting film having substantially uniform phase development |
US6257366B1 (en) * | 1995-09-13 | 2001-07-10 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek | Exhaust device for a turbine engine |
US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
US20010003271A1 (en) * | 1999-12-10 | 2001-06-14 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
US20020168466A1 (en) * | 2001-04-24 | 2002-11-14 | Tapphorn Ralph M. | System and process for solid-state deposition and consolidation of high velocity powder particles using thermal plastic deformation |
Non-Patent Citations (3)
Title |
---|
F. A. Lowenheim, Electroplating, McGraw-Hill Book Co., New York, 1978, pp.357-360. * |
F. A. Lowenheim, Modern Electroplating, John Wiley & Sons, Inc., New York, 1974, pp.464-466. * |
Robert C. Weast, editor, Handbook of Chemistry and Physics, 57th, Edition, CRC Press, Cleveland, Ohio, 1976, pp.D141 to d-146. * |
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Also Published As
Publication number | Publication date |
---|---|
US7371467B2 (en) | 2008-05-13 |
US7833401B2 (en) | 2010-11-16 |
US8110086B2 (en) | 2012-02-07 |
US20080223725A1 (en) | 2008-09-18 |
US9012030B2 (en) | 2015-04-21 |
US8114525B2 (en) | 2012-02-14 |
US20080017516A1 (en) | 2008-01-24 |
US20080110760A1 (en) | 2008-05-15 |
US20120135155A1 (en) | 2012-05-31 |
US20040191545A1 (en) | 2004-09-30 |
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