US20120061788A1 - Photodiodes with pn-junction on both front and back sides - Google Patents
Photodiodes with pn-junction on both front and back sides Download PDFInfo
- Publication number
- US20120061788A1 US20120061788A1 US13/225,245 US201113225245A US2012061788A1 US 20120061788 A1 US20120061788 A1 US 20120061788A1 US 201113225245 A US201113225245 A US 201113225245A US 2012061788 A1 US2012061788 A1 US 2012061788A1
- Authority
- US
- United States
- Prior art keywords
- junction
- semiconductor substrate
- photodiode
- impurity region
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000012535 impurity Substances 0.000 claims abstract description 30
- 230000009977 dual effect Effects 0.000 claims abstract description 19
- 230000003667 anti-reflective effect Effects 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 description 36
- 239000002184 metal Substances 0.000 description 36
- 229920002120 photoresistant polymer Polymers 0.000 description 36
- 238000005530 etching Methods 0.000 description 31
- 238000000034 method Methods 0.000 description 29
- 230000003647 oxidation Effects 0.000 description 24
- 238000007254 oxidation reaction Methods 0.000 description 24
- 238000009792 diffusion process Methods 0.000 description 21
- 238000001459 lithography Methods 0.000 description 21
- 238000000206 photolithography Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000000151 deposition Methods 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 10
- 238000001465 metallisation Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002591 computed tomography Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000002059 diagnostic imaging Methods 0.000 description 2
- 238000000866 electrolytic etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000037361 pathway Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004557 technical material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
Abstract
The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity type shallowly diffused on the back side of the semiconductor substrate, a first PN junction formed between the first impurity region and the semiconductor substrate, and a second PN junction formed between the second impurity region and the semiconductor substrate. Since light beams of a shorter wavelength are absorbed near the surface of a semiconductor, while light beams of a longer wavelength reach deeper sections, the two PN junctions at front and back sides of the photodiode allow the device to be used as an adjustable low pass or high pass wavelength filter detector.
Description
- The present application is a continuation of U.S. patent application Ser. No. 12/722,685, which was filed on Mar. 12, 2010, which is a continuation-in-part of each of the following applications:
-
- 1) U.S. patent application Ser. No. 12/505,610, which was filed on Jul. 20, 2009, which is a continuation of U.S. patent application Ser. No. 11/401,099, which was filed on Apr. 10, 2006 and issued as U.S. Pat. No. 7,579,666, which is a continuation of U.S. patent Ser. No. 10/797,324, filed on Mar. 10, 2004 which relies on, for priority, U.S. Provisional Application No. 60/468,181, having a priority date of May 5, 2003.
- 2) U.S. patent application Ser. No. 11/081,366, which was filed on Mar. 16, 2005, which relies on, for priority, U.S. patent application Ser. No. 10/838,897, having a filing date of May 5, 2004, which further relies on Provisional Application No. 60/468,181, having a priority date of May 5, 2003.
- 3) U.S. patent application Ser. No. 12/325,304, filed on Dec. 1, 2008, which is a continuation of U.S. patent application Ser. No. 11/774,002, which was filed on Jul. 6, 2007 and issued as U.S. Pat. No. 7,470,966, which is a continuation of U.S. patent application Ser. No. 11/081,219, which was filed on Mar. 16, 2005 and issued as U.S. Pat. No. 7,256,470.
- 4) U.S. patent application Ser. No. 11/849,623, filed on Sep. 4, 2007, which is a continuation of U.S. patent application Ser. No. 11/383,485, which was filed on May 15, 2006 and issued as U.S. Pat. No. 7,279,731.
- 5) U.S. patent application Ser. No. 12/499,203, filed on Jul. 8, 2009, which is a continuation of U.S. patent application Ser. No. 11/258,848, which was filed on Oct. 25, 2005 and issued as U.S. Pat. No. 7,576,369.
- 6) U.S. patent application Ser. No. 12/637,529, filed on Dec. 14, 2009, which is a continuation of U.S. patent application Ser. No. 11/555,367, which was filed on Nov. 1, 2006 and issued as U.S. Pat. No. 7,656,001.
- 7) U.S. patent application Ser. No. 12/637,557, filed on Dec. 14, 2009, which is a continuation of U.S. patent application Ser. No. 11/532,191, which was filed on Sep. 15, 2006 and issued as U.S. Pat. No. 7,655,999.
- 8) U.S. patent application Ser. No. 11/422,246, filed on Jun. 5, 2006.
- 9) U.S. patent application Ser. No. 12/559,498, filed on Sep. 15, 2009, which is a continuation-in-part of U.S. patent application Ser. No. 11/744,908, filed on May 7, 2007 and which relies on U.S. Provisional Application Nos. 61/159,732 (filed on Mar. 12, 2009), 61/099,768 (filed on Sep. 24, 2008), and 61/096,877 (filed on Sep. 15, 2008).
- 10) U.S. patent application Ser. No. 12/709,621, which was filed on Feb. 22, 2010.
- 11) U.S. patent application Ser. No. 12/199,558, which was filed on Aug. 27, 2008.
- 12) U.S. patent application Ser. No. 12/689,349, which was filed on Jan. 19, 2010.
- All of the aforementioned applications and issued patents are herein incorporated by reference in their entirety.
- The present application relates generally to the field of wavelength sensitive photodiodes and more specifically to photodiodes with PN junctions on both front and back sides.
- Photodiodes comprise of multiple radiation sensitive junctions formed in semiconductor material. Within a photodiode, charge carriers are created by light that illuminates the junction and photocurrent is generated dependent upon the degree of illumination. Similarly, a photodiode array comprises of large numbers of light sensitive spaced-apart elements, further comprising of a semiconductor junction and a region of high response where the photo-generated charge carriers are collected. Arrays of photodiodes or basically photodiodes are used in various applications including, but not limited to, optical position encoding, and low light-level imaging, such as night photography, nuclear medical imaging, photon medical imaging, multi-slice computer tomography (CT) imaging, radiation detection and ballistic photon detection.
- Photodiodes are characterized by certain characteristics, such as electrical, optical, current (I), voltage (V), and noise. Electrical characteristics of photodiode dominantly include shunt resistance, series resistance, junction capacitance, rise or fall time and frequency response. Noise in photodiodes is generated by a plurality of sources including, but not limited to, thermal noise, quantum or photon noise, and flicker noise. Also, silicon photodiodes, essentially active solid-state semiconductor devices, are among the most popular photodetectors coalescing high performance over a wide wavelength range with unmatched user-friendliness. For example, silicon photodiodes are sensitive to light in the wide spectral range, extending from deep ultraviolet all the way through visible to near infrared. Additionally, silicon photodiodes detect the presence or absence of minute light intensities thereby facilitating extremely precise measurement of the same on appropriate calibration. For instance, appropriately calibrated silicon photodiodes detect and measure light intensities varying over a wide range, from very minute light intensities of below 10-13 watts/cm2 to high intensities above 10-3 watts/cm2.
- Accordingly, there is need in the prior art for a photodiode that can be used as an adjustable low pass or high pass wavelength filter detector. Specifically, there is need in the prior art for a front and back side PN junction photodiode that is sensitive to wavelengths and can also be used as a high speed long wavelength detector at relatively low reverse bias.
- The present application discloses a dual junction photodiode semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first impurity region of a second conductivity type shallowly diffused on a first side of said semiconductor substrate; a second impurity region of the second conductivity type shallowly diffused on a second side of said semiconductor substrate, said second side being opposite to said first side; a first PN junction formed between said semiconductor substrate and first impurity region; and a second PN junction formed between said semiconductor substrate and said second impurity region. The first and second PN junctions are formed at a first depth and a second depth from a top surface of said semiconductor substrate, wherein the second depth is deeper than the first depth. The semiconductor substrate has a resistivity in a range of 2000 to 6000 ohm-cm, and more particularly 4000 ohm-cm, and a thickness of in a range of 100 to 800 microns, and more particularly 400 microns.
- The dual junction photodiode semiconductor device further comprises a first output electrode connected to said first impurity region; a second output electrode connected to said second impurity region; and a third output electrode connected to said semiconductor substrate, wherein said first and third output electrodes are output electrodes of the first PN junction, and said second and third output electrodes are output electrodes of the second PN junction. The first conductivity type is p+ and said second conductivity type is n+. In another embodiment, the first conductivity type is n+ and the second conductivity type is p+. The dual junction photodiode semiconductor device further comprises an anti-reflective layer on said first side, which is about 100 to 3000 Angstroms, and more particularly 1000 Angstroms, thick.
- In another embodiment, the present application discloses a multi junction photodiode semiconductor device comprising a semiconductor substrate of a first conductivity type; a first impurity region of a second conductivity type shallowly diffused on a first side of said semiconductor substrate, wherein an interface between said first impurity region and said first side of the semiconductor substrate forms a first PN junction; a second impurity region of the second conductivity type shallowly diffused on a second side of said semiconductor substrate, said second side being opposite to said first side, wherein an interface between said second impurity region and said second side of the semiconductor substrate forms a first PN junction; and wherein said photodiode is configured to provide both a low pass filter response and a high pass filter response.
- The first and second PN junctions are formed at a first depth and a second depth from a top surface of said semiconductor substrate, wherein the second depth is deeper than the first depth. The multi junction photodiode semiconductor device of claim 11, wherein said semiconductor substrate has a resistivity in a range of 100 to 10000 ohm-cm, and more particularly 4000 ohm-cm, and a thickness of in a range of 50 to 1000 microns, and more particularly, 400 microns.
- The multi junction photodiode semiconductor device further comprising a first output electrode connected to said first impurity region; a second output electrode connected to said second impurity region; and a third output electrode connected to said semiconductor substrate, wherein said first and third output electrodes are output electrodes of the first PN junction, and said second and third output electrodes are output electrodes of the second PN junction. In one embodiment, the first conductivity type is p+. while the second conductivity type is n+. In another embodiment, the first conductivity type is n+ while the second conductivity type is p+. The dual junction photodiode semiconductor device further comprises an anti-reflective layer on said first side, which is about 100 to 3000 Angstroms, and more particularly 1000 Angstroms, thick.
- These and other features and advantages of the present invention will be appreciated, as they become better understood by reference to the following detailed description when considered in connection with the accompanying drawings, wherein:
-
FIG. 1 shows a cross sectional view of a first embodiment of the wavelength sensitive sensor photodiode device of the present invention; -
FIG. 2 a shows front side view of a first embodiment of the wavelength sensitive sensor photodiode device of the present invention; -
FIG. 2 b shows back side view of a first embodiment of the wavelength sensitive sensor photodiode device of the present invention; -
FIG. 3 a shows the step of mask oxidation in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 3 b shows the steps of N+ mask lithography and oxide etching on front side in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 3 c shows the steps of N+ deposition followed by drive-in oxidation on the front side in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 3 d shows the steps of p+ mask lithography on front side followed by oxide etching on front side in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 3 e shows the steps of p+ mask lithography on back side followed by oxide etching on back side in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 3 f shows the steps of p+ diffusion and drive-in oxidation on front and back sides in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 3 g shows the steps of contact window mask lithography on front side followed by oxide layer etching on front side in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 3 h shows the step of depositing metal on front side in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 3 i shows the steps of metal mask lithography on front side followed by metal etching in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 3 j shows the steps of contact window mask lithography on back side followed by etching oxide layer on back side in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 3 k shows the step of depositing metal on back side in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 3 l shows the step of metal mask lithography on back side followed by metal etching in a first embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 4 shows a cross sectional view of a second embodiment of the wavelength sensitive sensor photodiode device of the present invention; -
FIG. 5 a shows a front side view of a second embodiment of the wavelength sensitive sensor photodiode device of the present invention; -
FIG. 5 b shows a back side view of a second embodiment of the wavelength sensitive sensor photodiode device of the present invention; -
FIG. 6 a shows the step of mask oxidation in a second embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 b shows the steps of P+ mask lithography and oxide etching on front side in a second embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 c shows the steps of P+ mask lithography and oxide etching on back side in another embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 d shows the steps of P+ deposition followed by drive-in oxidation on the front side in a second embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 e shows the steps of n+ mask lithography on front side followed by oxide etching on front side in a second embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 f shows the steps of n+ mask lithography on back side followed by oxide etching on back side in a second embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 g shows the steps of n+ diffusion and drive-in oxidation on front and back sides in a second embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 h shows the steps of contact window mask lithography on front side followed by oxide layer etching on front side in a second embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 i shows the step of depositing metal on front side in a second embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 j shows the steps of metal mask lithography on front side followed by metal etching in a second embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 k shows the steps of contact window mask lithography on back side followed by etching oxide layer on back side in a second embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 l shows the step of depositing metal on back side in a second embodiment of the wavelength sensitive photodiode device of the present invention; -
FIG. 6 m shows the step of metal mask lithography on back side followed by metal etching in a second embodiment of the wavelength sensitive photodiode device of the present invention; and -
FIG. 7 shows an exemplary spectral sensitivity curve when the wavelength sensitive photodiode device of the present invention is used as a high pass filter. - The present invention is directed towards multiple embodiments. The following disclosure is provided in order to enable a person having ordinary skill in the art to practice the invention. Language used in this specification should not be interpreted as a general disavowal of any one specific embodiment or used to limit the claims beyond the meaning of the terms used therein. The general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the invention. Also, the terminology and phraseology used is for the purpose of describing exemplary embodiments and should not be considered limiting. Thus, the present invention is to be accorded the widest scope encompassing numerous alternatives, modifications and equivalents consistent with the principles and features disclosed. For purpose of clarity, details relating to technical material that is known in the technical fields related to the invention have not been described in detail so as not to unnecessarily obscure the present invention.
-
FIG. 1 shows a cross-sectional view of one embodiment of the wavelength sensitivesensor photodiode device 100 of the present invention. Referring toFIG. 1 , in accordance with an aspect of the present invention,device 100 comprisessubstrate wafer 102, which, in one embodiment is N-type silicon having a thickness of about 0.130 mm. Persons of ordinary skill in the art would appreciate that the material and doping can be varied in alternate embodiments, as described below with respect toFIG. 4 . - Since the light beam of a shorter wavelength is absorbed near the surface of a semiconductor, whereas the light beam of a longer wavelength reaches a deeper section, the present invention is a dual junction
photoelectric semiconductor device 100 comprising:first junction 105 which comprises ashallow P+ layer 106 diffused intosilicon substrate 102 on thefront side 103 andsecond junction 110 which is comprised of ashallow P+ layer 108 diffused into N-type silicon substrate 102 on theback side 104. In one embodiment, shallow P+ layers 106 and 108 are comprised of boron.Anti-reflective layer 112 is deposited on the front side ofdevice 100. - Use of dual junctions at two different depths, that is at the front and back sides, within the
photodiode device 100 enables wavelength sensitivity across both short and long ranges of light wavelengths. In one embodiment, the photodiode is sensitive to wavelengths in the range of 200 nm to 800 nm. In another embodiment, the photodiode is sensitive to wavelengths in the range of 800 nm to 1100 nm. In another embodiment, the photodiode is concurrently sensitive to wavelengths in the range of 200 nm to 800 nm and wavelengths in the range of 800 nm to 1100 nm. In another embodiment, the photodiode is concurrently sensitive to wavelengths in the range of 200 nm to 800 nm and wavelengths in the range of 800 nm to 1100 nm and not to wavelengths below 200 nm. In another embodiment, the photodiode is concurrently sensitive to wavelengths in the range of 200 nm to 800 nm and wavelengths in the range of 800 nm to 1100 nm and not to wavelengths above 1100 nm. In another embodiment, the photodiode is concurrently sensitive to wavelengths in the range of 200 nm to 800 nm and wavelengths in the range of 800 nm to 1100 nm and not to wavelengths below 100 nm. In another embodiment, the photodiode is concurrently sensitive to wavelengths in the range of 200 nm to 800 nm and wavelengths in the range of 800 nm to 1100 nm and not to wavelengths above 1200 nm. - In another embodiment, the photodiode comprises a low pass filter sensitive to wavelengths in the range of 200 nm to 800 nm and high pass filter sensitive to wavelengths in the range of 800 nm to 1100 nm. In another embodiment, the photodiode comprises a low pass filter sensitive to wavelengths in the range of 200 nm to 800 nm and high pass filter sensitive to wavelengths in the range of 800 nm to 1100 nm and does not filter wavelengths below 200 nm. In another embodiment, the photodiode comprises a low pass filter sensitive to wavelengths in the range of 200 nm to 800 nm and high pass filter sensitive to wavelengths in the range of 800 nm to 1100 nm and does not filter wavelengths between above 1100 nm. In another embodiment, the photodiode comprises a low pass filter sensitive to wavelengths in the range of 200 nm to 800 nm and high pass filter sensitive to wavelengths in the range of 800 nm to 1100 nm and does not filter wavelengths below 100 nm or above 1200 nm.
- Front-side
metal contact pads side metallization 125 provide necessary electrical contacts for thephotodiode 100.N+ deposition areas terminals comprising cathode 115 andanode 122 in combination, form output terminals of a first photodiode PD1 associated with thefirst junction 105, whilecathode 115 and back-side anode 125 form output terminals of a second photodiode PD2 associated with thesecond junction 110. -
FIGS. 2 a and 2 b depict front and back sides, respectively, along with exemplary dimensional specifications of one embodiment of the photodiode of the present invention. Referring toFIG. 2 a, in one embodiment,device substrate 202 is a square of 2.962±0.025 mm each side while the front sideactive area 235 is a square of 2.413 mm each side. The frontside cathode pad 215 is 0.508 mm in length and 0.127 mm in width.Cathode pad 215 is 1.227 mm fromside A 201 and 0.127 mm from the nearest edge of theactive area 235. The frontside anode pad 222 is 0.203 mm in length and 0.165 mm in width.Anode pad 222 is 1.380 mm fromside A 201 of the photodiode. Referring toFIG. 2 b, the back side active area 240 is also a square of 2.515 mm each side defined by the backside anode metallization 225. The sides of theanode metallization 225 are about 0.224 mm away from the outer edges of thedevice substrate 202. - The manufacturing process of one embodiment of the wavelength sensitive sensor photodiode of the present invention will now be described in greater detail. Persons of ordinary skill in the art should note that although one exemplary manufacturing process is described herein, various modifications may be made without departing from the scope and spirit of the invention. Reference is now made to
FIG. 1 , which is a cross sectional view of one embodiment of the photodiode of the present invention, andFIGS. 3 a through 3 l which are also cross-sectional views of the photodiode ofFIG. 1 , illustrating exemplary manufacturing steps of the embodiment. Modifications or alterations to the manufacturing steps, their corresponding details, and any order presented may be readily apparent to those of ordinary skill in the art. Thus, the present invention contemplates many possibilities for manufacturing the sensor photodiode of the present invention and is not limited to the examples provided herein. -
FIG. 3 a depicts the first step for manufacturing ofsensor photodiode 300 a of the present invention, where the starting material of the photodiode issubstrate wafer 302 a. In one embodiment thewafer 302 a is N-type silicon having a resistivity of about 4,000 ohm-cm, and 400 μm thick. Thedevice wafer 302 a is polished on both sides to allow greater conformity to parameters, surface flatness, and specification thickness. However, it should be understood by those of ordinary skill in the art that the above specifications are not binding and that the material type and wafer size can be easily changed to suit the design, fabrication, and functional requirements of the present invention. Thedevice wafer 302 a is subjected to a standard mask oxidation process that growssilicon oxide layers - As shown in
FIG. 3 b, after the standard mask oxidation is complete, during the next step thedevice wafer 302 b is subjected to n+ photolithography on the front-side. Photolithography includes employing a photoresist layer to etch a specific pattern on the surface of the wafer. Generally, the photoresist layer is a photosensitive polymeric material for photolithography and photoengraving that can form a patterned coating on the surface. After selecting a suitable material and creating a suitable photoresist pattern, a thin photoresist layer is applied to the front side of thedevice wafer 302 b. In one embodiment, the photoresist layer is applied via a spin coating technique. Spin coating is well-known to those of ordinary skill in the art and will not be described in detail herein. - The photoresist layer is then appropriately treated to reveal
n+ diffusion regions - In one embodiment of the present invention, the
device wafer 302 b is subjected to n+ masking. N+ masking is employed to protect portions ofdevice wafer 302 b. Generally, photographic masks are high precision plates containing microscopic images of preferred pattern or electronic circuits. They are typically fabricated from flat pieces of quartz or glass with a layer of chrome on one side. The mask geometry is etched in the chrome layer. In one embodiment, the n+ mask comprises a plurality of diffusion windows with appropriate geometrical and dimensional specifications. The photoresist coateddevice wafer 302 b is aligned with the n+ mask. An intense light, such as UV light, is projected through the mask, exposing the photoresist layer in the pattern of the n+ mask. The n+ mask allows selective irradiation of the photoresist on the device wafer. Regions that are exposed to radiation are hardened while those that are reserved for deep diffusion remain shielded by the n+ mask and easily removed. The exposed and remaining photoresist is then subjected to a suitable chemical or plasma etching to reveal the pattern transfer from the mask to the photoresist layer. An etching process is then employed to remove the silicon dioxide layer. In one embodiment, the pattern of the photoresist layer and/or n+ mask definesregions oxide layer 303 a (deposited as shown inFIG. 3 a) and is ready for n+ diffusion. - Now referring to
FIG. 3 c, in the next step thedevice wafer 302 c is subjected toN+ deposition substrate wafer 302 c and fills the gaps left by the removed photoresist layer. In one embodiment, the dopant atoms deposited may include phosphorous dopant atoms. Thereafter, thewafer 302 c is subjected to a drive-in oxidation process that is used to redistribute the dopant atoms and deposit them deeper into the wafer. In addition, exposed silicon surfaces are oxidized. - Referring now to
FIGS. 3 d and 3 e, during subsequent steps of fabrication, the front and back sides of thedevice wafer regions regions regions oxide layers FIG. 3 a, and ready for p+ diffusion. - As shown in
FIG. 3 f, during the next step of fabrication,regions regions anti-reflective layers 312 f that in one embodiment are of silicon oxide and about 1000 Angstrom thick. - In the next step shown in
FIG. 3 g, a photo resist layer is applied on the front and back sides of thedevice wafer 302 g and a contact window mask is etched on the front-side of the device wafer. The contact mask is formed on the front-side of thedevice wafer 302 g by using standard semiconductor technology photolithography techniques. As with any conventional photolithography process, contact window mask lithography comprises of the following tasks: substrate preparation; photoresist application; soft baking; mask alignment; exposure development, hard baking, and etching. In one embodiment,contact windows - In the next step, as shown in
FIG. 3 h, metal deposition is carried out on front side of thedevice wafer 302 h. In the metal deposition process, also known as metallization,metal layers 331 h are deposited on the wafer to create conductive pathways. The most common metals include aluminum, nickel, chromium, gold, germanium, copper, silver, titanium, tungsten, platinum and tantalum. - Referring to
FIG. 3 i, during the next step, the front-side of thedevice wafer 302 i undergoes a process of metal lithography thereby forming front-side metal contacts device wafer 302 i is metal etched. Metal etching can be performed in a variety of methods including but not limited to abrasive etching, dry etching, electro etching, laser etching, photo etching, reactive ion etching, sputter etching, and vapor phase etching. - Referring now to
FIG. 3 j, at the next step a contact window mask is etched on the back-side of thedevice wafer 302 j. The contact mask is formed on the front-side of thedevice wafer 302 j by using standard semiconductor technology photolithography techniques comprising of the following tasks: substrate preparation; photoresist application; soft baking; mask alignment; exposure development, hard baking, and etching. In one embodiment,contact window 326 j is formed by removing the anti-reflective layer using either standard wet or standard dry etching techniques on the back-side of the device wafer. - During the next step, as shown in
FIG. 3 k, a layer ofmetal 340 k is deposited on the back side of thedevice wafer 302 k. In the next step shown inFIG. 3 l, the back-side of the device wafer 302 l undergoes metal lithography thereby forming back-side metal contact 325 l. In one embodiment of the present invention the back-side of the device wafer 302 l is metal etched. -
FIG. 4 shows a cross-sectional view of another embodiment of the wavelength sensitive sensor photodiode device of the present invention. Referring toFIG. 4 , in accordance with an aspect of the present invention,device 400 comprisessubstrate wafer 402, which, in one embodiment is P-type silicon having a thickness of about 0.130 mm. Persons of ordinary skill in the art would appreciate that the material and doping can be varied in alternate embodiments. Since the light beam of a shorter wavelength is absorbed near the surface of a semiconductor, whereas the light beam of a longer wavelength reaches a deeper section, the present invention is a dual junctionphotoelectric semiconductor device 400 comprising:first junction 405 which comprises ashallow N+ layer 406 diffused intosilicon substrate 402 on thefront side 403 andsecond junction 410 which is comprised of ashallow N+ layer 408 diffused into P-type silicon substrate 402 on theback side 404. In one embodiment, shallow N+ layers 406 and 408 are comprised of phosphorous.Anti-reflective layer 412 is deposited on thefront side 403 ofdevice 400. - Use of dual junctions at two different depths, that is at the front and back sides, within the
photodiode device 400 enables wavelength sensitivity across both short and long ranges of light wavelengths. Front-sidemetal contact pads side metallization 425 provide necessary electrical contacts for thephotodiode 400. Front sideP+ deposition channels - High resistivity P-type silicon is prone to surface inversion (whereby P-type becomes N-type) due to the positive charges that are always present in the passivated oxide. When the P-surface is inverted to N-surface, an N-type surface channel is generated, which will connect the N+ active area junction to the edge of the chip, resulting in high dark leakage current. In order to avoid the connection to the surface inversion area, a heavily doped (greater than 1×1019 cm3) P+ ring needs to be implanted or diffused surrounding the active N+ zone, since it is very difficult and nearly impossible to invert heavily doped P+ zone to N-type). Thus, a P+ ring or backside
P+ deposition channels -
FIGS. 5 a and 5 b show front and back sides, respectively, along with exemplary dimensional specifications of one embodiment of the photodiode of the present invention. Referring toFIG. 5 a, in one embodiment, thedevice substrate 502 is a square of 2.962±0.025 mm each side while the front sideactive area 535 is a square of 2.413 mm each side. The frontside anode pad 515 is 0.508 mm in length and 0.127 mm in width.Anode pad 515 is 1.227 mm fromside A 501 and 0.127 mm from the nearest edge of theactive area 535. The frontside cathode pad 522 is 0.203 mm in length and 0.165 mm in width.Cathode pad 522 is 1.380 mm fromside A 501 of the photodiode. Referring toFIG. 5 b, the back sideactive area 540 is also a square of 2.515 mm each side defined by the back side metallizedcathode layer 525. The sides of the metallizedcathode layer 525 are about 0.224 mm away from the outer edges of thedevice substrate 502. - Reference is now made to
FIGS. 6 a through 6 m, which are cross-sectional views illustrating exemplary manufacturing steps for the embodiment of photodiode shown inFIG. 4 . Modifications or alterations to the manufacturing steps, their corresponding details, and any order presented may be readily apparent to those of ordinary skill in the art. -
FIG. 6 a depicts the first step for manufacturing ofsensor photodiode 600 a of the present invention, where the starting material of the photodiode issubstrate wafer 602 a. In one embodiment thewafer 602 a is P-type silicon having a resistivity of about 4,000 ohm-cm, and 400 μm thick. Thedevice wafer 602 a is polished on both sides to allow greater conformity to parameters, surface flatness, and specification thickness. However, it should be understood by those of ordinary skill in the art that the above specifications are not binding and that the material type and wafer size can be easily changed to suit the design, fabrication, and functional requirements of the present invention. Thedevice wafer 602 a is subjected to a standard mask oxidation process that growssilicon oxide layers 603 a, 604 a on front and back sides, respectively, of the device wafer. In one embodiment, the oxidation mask is made of silicon oxide (SiO2) or silicon nitride (Si3N4) and thermal oxidation is employed to achieve mask oxidation. In one embodiment, the oxide layers 603 a, 604 a have a thickness ranging from 8000 to approximately 9000 Angstroms. - As shown in
FIG. 6 b, after the standard mask oxidation is complete, during the next step thedevice wafer 602 b is subjected to p+ photolithography on the front-side. Photolithography includes employing a photoresist layer to etch a specific pattern on the surface of the wafer. Generally, the photoresist layer is a photosensitive polymeric material for photolithography and photoengraving that can form a patterned coating on the surface. After selecting a suitable material and creating a suitable photoresist pattern, a thin photoresist layer is applied to the front side of thedevice wafer 602 b. In one embodiment, the photoresist layer is applied via a spin coating technique. Spin coating is well-known to those of ordinary skill in the art and will not be described in detail herein. The photoresist layer is then appropriately treated to revealp+ diffusion regions - In one embodiment of the present invention, the
device wafer 602 b is subjected to p+ masking. P+ masking is employed to protect portions ofdevice wafer 602 b. Generally, photographic masks are high precision plates containing microscopic images of preferred pattern or electronic circuits. They are typically fabricated from flat pieces of quartz or glass with a layer of chrome on one side. The mask geometry is etched in the chrome layer. In one embodiment, the p+ mask comprises a plurality of diffusion windows with appropriate geometrical and dimensional specifications. The photoresist coateddevice wafer 602 b is aligned with the p+ mask. An intense light, such as UV light, is projected through the mask, exposing the photoresist layer in the pattern of the p+ mask. The p+ mask allows selective irradiation of the photoresist on the device wafer. Regions that are exposed to radiation are hardened while those that are reserved for deep diffusion remain shielded by the p+ mask and easily removed. The exposed and remaining photoresist is then subjected to a suitable chemical or plasma etching to reveal the pattern transfer from the mask to the photoresist layer. An etching process is then employed to remove the silicon dioxide layer. In one embodiment, the pattern of the photoresist layer and/or p+ mask definesregions FIG. 6 a) and is ready for p+ diffusion. - In the next step, shown in
FIG. 6 c, thedevice wafer 602 c is subjected to p+ photolithography on the back-side. The procedure followed for p+ photolithography on the back side is the same as that followed for the front side, described above with reference toFIG. 6 b. This step creates twomore regions - Now referring to
FIG. 6 d, in the next step thedevice wafer 602 c is subjected to P+ deposition in regions on thefront side substrate wafer 602 d and fills the gaps left by the removed photoresist layer. In one embodiment, the dopant atoms deposited may include boron dopant atoms. Thereafter, thewafer 602 d is subjected to a boron drive-in oxidation process that is used to redistribute the dopant atoms and deposit them deeper into the wafer. In addition, exposed silicon surfaces are oxidized. - Referring now to
FIGS. 6 e and 6 f, during subsequent steps of fabrication, the front and back sides of thedevice wafer regions 607 e, 609 f along with oxide etching on front and back sides, respectively. As with any conventional photolithography process, n+ photolithography comprises of the following tasks: substrate preparation; photoresist application; soft baking; mask alignment; exposure development, hard baking, and etching. In addition various other chemical treatments may be performed. In one embodiment, the pattern of the photoresist layer and/or n+ mask definesregions 607 e, 609 f on the front and back sides respectively. Bothregions 607 e, 609 f are devoid ofoxide layers 603 a, 604 a shown inFIG. 6 a, and ready for n+ diffusion. - As shown in
FIG. 6 g, during the next step of fabrication,regions regions anti-reflective layers 612 g that in one embodiment are of silicon oxide and about 1000 Angstrom thick. - In the next step shown in
FIG. 6 h, a photo resist layer is applied on the front and back sides of thedevice wafer 602 h and a contact window mask is etched on the front-side of the device wafer. The contact mask is formed on the front-side of thedevice wafer 602 h by using standard semiconductor technology photolithography techniques. As with any conventional photolithography process, contact window mask lithography comprises of the following tasks: substrate preparation; photoresist application; soft baking; mask alignment; exposure development, hard baking, and etching. In one embodiment,contact windows - In the next step, as shown in
FIG. 6 i, metal deposition is carried out on front side of thedevice wafer 602 i. In the metal deposition process, also known as metallization,metal layers 631 i are deposited on the wafer to create conductive pathways. The most common metals include aluminum, nickel, chromium, gold, germanium, copper, silver, titanium, tungsten, platinum and tantalum. - Referring to
FIG. 6 j, during the next step, the front-side of the device wafer 602 j undergoes a process of metal lithography thereby forming front-side metal contacts - Referring now to
FIG. 6 k, at the next step a contact window mask is etched on the back-side of thedevice wafer 602 k. The contact mask is formed on the front-side of thedevice wafer 602 k by using standard semiconductor technology photolithography techniques comprising of the following tasks: substrate preparation; photoresist application; soft baking; mask alignment; exposure development, hard baking, and etching. In one embodiment,contact window 626 k is formed by removing the anti-reflective layer using either standard wet or standard dry etching techniques on the back-side of the device wafer. - During the next step, as shown in
FIG. 6 l, a layer of metal 640 l is deposited on the back side of the device wafer 602 l. In the next step shown inFIG. 6 m, the back-side of thedevice wafer 602 m undergoes metal lithography thereby forming back-side metal contact 625 m. In one embodiment of the present invention the back-side of thedevice wafer 602 m is metal etched. -
FIG. 7 shows an exemplary spectral sensitivity curve when the wavelength sensitive photodiode device of the present invention is used as a high pass filter only. Referring toFIG. 7 ,curve 710 corresponds to a spectral response when front PN Junction of the photodiode is shorted, while the back PN Junction is at 20V reverse bias. As can be seen in the figure,curve 710 achieves itspeak 712 between wavelengths of 950 and 1000 nm, which clearly indicates a high pass response. - One of ordinary skill in the art would appreciate that the wavelength sensitive photodiode device of the present invention may also be used as a low pass filter only, by shorting the back PN Junction and placing the front PN junction at a bias voltage of appropriate level.
- While the exemplary embodiments of the present invention are described and illustrated herein, it will be appreciated that they are merely illustrative. It will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from or offending the spirit and scope of the invention.
Claims (20)
1. A dual junction photodiode semiconductor device comprising:
a. a semiconductor substrate of a first conductivity type;
b. a first impurity region of a second conductivity type shallowly diffused on a first side of said semiconductor substrate, wherein the first impurity region has a first thickness and a first resistivity;
c. a second impurity region of the second conductivity type shallowly diffused on a second side of said semiconductor substrate, said second side being opposite to said first side, wherein the second impurity region has a second thickness and a second resistivity, wherein said first thickness is different than the second thickness, and wherein said second resistivity is different than the second resistivity;
d. a first PN junction formed between said semiconductor substrate and first impurity region; and
e. a second PN junction formed between said semiconductor substrate and said second impurity region.
2. The dual junction photodiode semiconductor device of claim 1 , wherein said first and second PN junctions are formed at a first depth and a second depth from a top surface of said semiconductor substrate, wherein the second depth is deeper than the first depth.
3. The dual junction photodiode semiconductor device of claim 1 , wherein said semiconductor substrate has a resistivity in a range of 4000 ohm-cm and a thickness of in a range of 400 microns.
4. The dual junction photodiode semiconductor device of claim 1 , further comprising:
a. a first output electrode connected to said first impurity region;
b. a second output electrode connected to said second impurity region; and
c. a third output electrode connected to said semiconductor substrate, wherein said first and third output electrodes are output electrodes of the first PN junction, and said second and third output electrodes are output electrodes of the second PN junction.
5. The dual junction photodiode semiconductor device of claim 1 , wherein said first conductivity type is p+.
6. The dual junction photodiode semiconductor device of claim 5 , wherein said second conductivity type is n+.
7. The dual junction photodiode semiconductor device of claim 1 , wherein said first conductivity type is n+.
8. The dual junction photodiode semiconductor device of claim 7 , wherein said second conductivity type is p+.
9. The dual junction photodiode semiconductor device of claim 1 , further comprising an anti-reflective layer on said first side.
10. The dual junction photodiode semiconductor device of claim 9 , wherein the anti-reflective layer is about 1000 Angstroms thick.
11. A multi junction photodiode semiconductor device comprising:
a. a semiconductor substrate of a first conductivity type;
b. a low pass filter wherein said low pass filter comprises a first impurity region of a second conductivity type shallowly diffused on a first side of said semiconductor substrate, wherein an interface between said first impurity region and said first side of the semiconductor substrate forms a first PN junction;
c. a high pass filter wherein said high pass filter comprises a second impurity region of the second conductivity type shallowly diffused on a second side of said semiconductor substrate, said second side being opposite to said first side, wherein an interface between said second impurity region and said second side of the semiconductor substrate forms a first PN junction; and
d. wherein the low pass filter has a first thickness and a first resistivity, wherein the high pass filter has a second thickness and a second resistivity, wherein the first thickness is different than the second thickness and wherein the first resistivity is different than the second resistivity.
12. The multi junction photodiode semiconductor device of claim 11 , wherein said first and second PN junctions are formed at a first depth and a second depth from a top surface of said semiconductor substrate, wherein the second depth is deeper than the first depth.
13. The multi junction photodiode semiconductor device of claim 11 , wherein said semiconductor substrate has a resistivity in a range of 4000 ohm-cm and a thickness of in a range of 400 microns.
14. The multi junction photodiode semiconductor device of claim 11 , further comprising:
a. a first output electrode connected to said first impurity region;
b. a second output electrode connected to said second impurity region; and
c. a third output electrode connected to said semiconductor substrate, wherein said first and third output electrodes are output electrodes of the first PN junction, and said second and third output electrodes are output electrodes of the second PN junction.
15. The multi junction photodiode semiconductor device of claim 11 , wherein said first conductivity type is p+.
16. The multi junction photodiode semiconductor device of claim 15 , wherein said second conductivity type is n+.
17. The multi junction photodiode semiconductor device of claim 11 , wherein said first conductivity type is n+.
18. The multi junction photodiode semiconductor device of claim 17 , wherein said second conductivity type is p+.
19. The multi junction photodiode semiconductor device of claim 11 , further comprising an anti-reflective layer on said first side.
20. The multi junction photodiode semiconductor device of claim 19 , wherein the anti-reflective layer is about 1000 Angstroms thick.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/225,245 US20120061788A1 (en) | 2003-05-05 | 2011-09-02 | Photodiodes with pn-junction on both front and back sides |
Applications Claiming Priority (28)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46818103P | 2003-05-05 | 2003-05-05 | |
US10/797,324 US7057254B2 (en) | 2003-05-05 | 2004-03-10 | Front illuminated back side contact thin wafer detectors |
US10/838,897 US20050247761A1 (en) | 2004-05-04 | 2004-05-04 | Surface mount attachment of components |
US11/081,219 US7256470B2 (en) | 2005-03-16 | 2005-03-16 | Photodiode with controlled current leakage |
US11/081,366 US7880258B2 (en) | 2003-05-05 | 2005-03-16 | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
US11/258,848 US7576369B2 (en) | 2005-10-25 | 2005-10-25 | Deep diffused thin photodiodes |
US11/401,099 US7579666B2 (en) | 2003-05-05 | 2006-04-10 | Front illuminated back side contact thin wafer detectors |
US11/383,485 US7279731B1 (en) | 2006-05-15 | 2006-05-15 | Edge illuminated photodiodes |
US11/422,246 US8120023B2 (en) | 2006-06-05 | 2006-06-05 | Low crosstalk, front-side illuminated, back-side contact photodiode array |
US11/532,191 US7655999B2 (en) | 2006-09-15 | 2006-09-15 | High density photodiodes |
US11/555,367 US7656001B2 (en) | 2006-11-01 | 2006-11-01 | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
US11/744,908 US8164151B2 (en) | 2007-05-07 | 2007-05-07 | Thin active layer fishbone photodiode and method of manufacturing the same |
US11/774,002 US7470966B2 (en) | 2005-03-16 | 2007-07-06 | Photodiode with controlled current leakage |
US11/849,623 US7728367B2 (en) | 2006-05-15 | 2007-09-04 | Edge illuminated photodiodes |
US12/199,558 US7709921B2 (en) | 2008-08-27 | 2008-08-27 | Photodiode and photodiode array with improved performance characteristics |
US9687708P | 2008-09-15 | 2008-09-15 | |
US9976808P | 2008-09-24 | 2008-09-24 | |
US12/325,304 US7898055B2 (en) | 2005-03-16 | 2008-12-01 | Photodiode with controlled current leakage |
US15973209P | 2009-03-12 | 2009-03-12 | |
US12/499,203 US8674401B2 (en) | 2005-10-25 | 2009-07-08 | Deep diffused thin photodiodes |
US12/505,610 US20100084730A1 (en) | 2003-05-05 | 2009-07-20 | Front Illuminated Back Side Contact Thin Wafer Detectors |
US12/559,498 US8766392B2 (en) | 2007-05-07 | 2009-09-15 | Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same |
US12/637,557 US7968964B2 (en) | 2006-09-15 | 2009-12-14 | High density photodiodes |
US12/637,529 US8049294B2 (en) | 2006-11-01 | 2009-12-14 | Front side illuminated, back-side contact double-sided PN-junction photodiode arrays |
US12/689,349 US8686529B2 (en) | 2010-01-19 | 2010-01-19 | Wavelength sensitive sensor photodiodes |
US12/709,621 US8519503B2 (en) | 2006-06-05 | 2010-02-22 | High speed backside illuminated, front side contact photodiode array |
US12/722,685 US8035183B2 (en) | 2003-05-05 | 2010-03-12 | Photodiodes with PN junction on both front and back sides |
US13/225,245 US20120061788A1 (en) | 2003-05-05 | 2011-09-02 | Photodiodes with pn-junction on both front and back sides |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/722,685 Continuation US8035183B2 (en) | 2003-05-05 | 2010-03-12 | Photodiodes with PN junction on both front and back sides |
Publications (1)
Publication Number | Publication Date |
---|---|
US20120061788A1 true US20120061788A1 (en) | 2012-03-15 |
Family
ID=46332408
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/722,685 Expired - Lifetime US8035183B2 (en) | 2003-05-05 | 2010-03-12 | Photodiodes with PN junction on both front and back sides |
US13/225,245 Abandoned US20120061788A1 (en) | 2003-05-05 | 2011-09-02 | Photodiodes with pn-junction on both front and back sides |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/722,685 Expired - Lifetime US8035183B2 (en) | 2003-05-05 | 2010-03-12 | Photodiodes with PN junction on both front and back sides |
Country Status (1)
Country | Link |
---|---|
US (2) | US8035183B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140021335A1 (en) * | 2010-09-05 | 2014-01-23 | Newport Corporation | Microprocessor based multi-junction detector system and method of use |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8519503B2 (en) | 2006-06-05 | 2013-08-27 | Osi Optoelectronics, Inc. | High speed backside illuminated, front side contact photodiode array |
US8035183B2 (en) * | 2003-05-05 | 2011-10-11 | Udt Sensors, Inc. | Photodiodes with PN junction on both front and back sides |
US8686529B2 (en) | 2010-01-19 | 2014-04-01 | Osi Optoelectronics, Inc. | Wavelength sensitive sensor photodiodes |
US7709921B2 (en) | 2008-08-27 | 2010-05-04 | Udt Sensors, Inc. | Photodiode and photodiode array with improved performance characteristics |
US9178092B2 (en) * | 2006-11-01 | 2015-11-03 | Osi Optoelectronics, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
EP2335288A4 (en) | 2008-09-15 | 2013-07-17 | Osi Optoelectronics Inc | Thin active layer fishbone photodiode with a shallow n+ layer and method of manufacturing the same |
US8247881B2 (en) * | 2009-04-27 | 2012-08-21 | University Of Seoul Industry Cooperation Foundation | Photodiodes with surface plasmon couplers |
US8399909B2 (en) | 2009-05-12 | 2013-03-19 | Osi Optoelectronics, Inc. | Tetra-lateral position sensing detector |
CN102054889A (en) * | 2010-10-29 | 2011-05-11 | 中国科学院半导体研究所 | Binode solar battery and preparation method thereof |
US20130256822A1 (en) * | 2012-03-28 | 2013-10-03 | Omnivision Technologies, Inc. | Method and device with enhanced ion doping |
US8912615B2 (en) | 2013-01-24 | 2014-12-16 | Osi Optoelectronics, Inc. | Shallow junction photodiode for detecting short wavelength light |
US9685575B2 (en) | 2015-03-06 | 2017-06-20 | Stmicroelectronics S.R.L. | Multiband double junction photodiode and related manufacturing process |
US10281329B2 (en) | 2017-06-14 | 2019-05-07 | Simmonds Precision Products, Inc. | Method and system for fast determination of the wavelength of a light beam |
WO2019159976A1 (en) * | 2018-02-14 | 2019-08-22 | 株式会社カネカ | Photoelectric conversion element and photoelectric conversion device |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3936319A (en) * | 1973-10-30 | 1976-02-03 | General Electric Company | Solar cell |
US4626675A (en) * | 1982-02-22 | 1986-12-02 | International Standard Electric Corporation | Demultiplexing photodiode sensitive to plural wavelength bands |
US5457322A (en) * | 1990-11-28 | 1995-10-10 | Hitachi, Ltd. | Semiconductor radiation detection apparatus for discriminating radiation having differing energy levels |
US20010034105A1 (en) * | 2000-04-20 | 2001-10-25 | Carlson Lars S. | Technique for suppression of edge current in semiconductor devices |
US20020027239A1 (en) * | 2000-09-07 | 2002-03-07 | Nec Corporation | CMOS image sensor and manufacturing method thereof |
US6646346B1 (en) * | 2000-10-27 | 2003-11-11 | Agilent Technologies, Inc. | Integrated circuit metallization using a titanium/aluminum alloy |
US20060232767A1 (en) * | 2005-04-13 | 2006-10-19 | Clifton Labs, Inc. | Method for determining wavelengths of light incident on a photodetector |
US8035183B2 (en) * | 2003-05-05 | 2011-10-11 | Udt Sensors, Inc. | Photodiodes with PN junction on both front and back sides |
Family Cites Families (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3041226A (en) * | 1958-04-02 | 1962-06-26 | Hughes Aircraft Co | Method of preparing semiconductor crystals |
US3765969A (en) * | 1970-07-13 | 1973-10-16 | Bell Telephone Labor Inc | Precision etching of semiconductors |
US3801390A (en) * | 1970-12-28 | 1974-04-02 | Bell Telephone Labor Inc | Preparation of high resolution shadow masks |
US3713921A (en) * | 1971-04-01 | 1973-01-30 | Gen Electric | Geometry control of etched nuclear particle tracks |
GB1444541A (en) * | 1972-09-22 | 1976-08-04 | Mullard Ltd | Radiation sensitive solid state devices |
US3808068A (en) * | 1972-12-11 | 1974-04-30 | Bell Telephone Labor Inc | Differential etching of garnet materials |
US4210923A (en) * | 1979-01-02 | 1980-07-01 | Bell Telephone Laboratories, Incorporated | Edge illuminated photodetector with optical fiber alignment |
US4290844A (en) * | 1979-02-26 | 1981-09-22 | Carson Alexiou Corporation | Focal plane photo-detector mosaic array fabrication |
US4329702A (en) * | 1980-04-23 | 1982-05-11 | Rca Corporation | Low cost reduced blooming device and method for making the same |
FR2581482B1 (en) * | 1985-05-03 | 1987-07-10 | Labo Electronique Physique | LOW LEAKAGE CURRENT PIN PHOTODIODE |
JPH0640023B2 (en) * | 1986-09-25 | 1994-05-25 | 株式会社神戸製鋼所 | Position and dispersion detection method and device for optical input |
JPH022691A (en) | 1988-06-17 | 1990-01-08 | Nec Corp | Semiconductor light receiving device |
US4904861A (en) * | 1988-12-27 | 1990-02-27 | Hewlett-Packard Company | Optical encoder using sufficient inactive photodetectors to make leakage current equal throughout |
US4998013A (en) * | 1988-12-27 | 1991-03-05 | Hewlett-Packard Company | Optical encoder with inactive photodetectors |
US4887140A (en) * | 1989-04-27 | 1989-12-12 | Board Of Regents, The Univ. Of Texas System | Clover design lateral effect position-sensitive device |
US5053318A (en) * | 1989-05-18 | 1991-10-01 | Shipley Company Inc. | Plasma processing with metal mask integration |
US5237197A (en) * | 1989-06-26 | 1993-08-17 | University Of Hawaii | Integrated VLSI radiation/particle detector with biased pin diodes |
DE69019498T2 (en) * | 1989-12-27 | 1996-02-29 | Nec Corp | Optical semiconductor device. |
US5127998A (en) | 1990-01-02 | 1992-07-07 | General Electric Company | Area-selective metallization process |
JPH0831409B2 (en) * | 1990-02-14 | 1996-03-27 | 株式会社東芝 | Compound semiconductor device and manufacturing method thereof |
US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
JP2817995B2 (en) * | 1990-03-15 | 1998-10-30 | 富士通株式会社 | III-V compound semiconductor heterostructure substrate and III-V compound heterostructure semiconductor device |
GB9009726D0 (en) * | 1990-05-01 | 1990-06-20 | British Telecomm | Optoelectronic device |
JPH04179278A (en) * | 1990-11-13 | 1992-06-25 | Sumitomo Electric Ind Ltd | Photodetector |
JP2719230B2 (en) * | 1990-11-22 | 1998-02-25 | キヤノン株式会社 | Photovoltaic element |
US5254480A (en) * | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
US5276955A (en) * | 1992-04-14 | 1994-01-11 | Supercomputer Systems Limited Partnership | Multilayer interconnect system for an area array interconnection using solid state diffusion |
DE69321822T2 (en) * | 1993-05-19 | 1999-04-01 | Hewlett Packard Gmbh | Photodiode structure |
US5408122A (en) * | 1993-12-01 | 1995-04-18 | Eastman Kodak Company | Vertical structure to minimize settling times for solid state light detectors |
US5446308A (en) * | 1994-04-04 | 1995-08-29 | General Electric Company | Deep-diffused planar avalanche photodiode |
US5449926A (en) * | 1994-05-09 | 1995-09-12 | Motorola, Inc. | High density LED arrays with semiconductor interconnects |
SE506654C2 (en) * | 1994-09-16 | 1998-01-26 | Sitek Electro Optics Ab | Position-sensitive photodetector with eliminated effect of jet light |
US5576559A (en) * | 1994-11-01 | 1996-11-19 | Intevac, Inc. | Heterojunction electron transfer device |
JPH08204224A (en) | 1995-01-23 | 1996-08-09 | Sumitomo Electric Ind Ltd | Compound semiconductor light receiving element and fabrication thereof |
US5587589A (en) * | 1995-03-22 | 1996-12-24 | Motorola | Two dimensional organic light emitting diode array for high density information image manifestation apparatus |
BR9610739A (en) * | 1995-10-05 | 1999-07-13 | Ebara Sola Inc | Solar cell and manufacturing process |
DE19549228A1 (en) * | 1995-12-21 | 1997-06-26 | Heidenhain Gmbh Dr Johannes | Optoelectronic sensor component |
US5889313A (en) * | 1996-02-08 | 1999-03-30 | University Of Hawaii | Three-dimensional architecture for solid state radiation detectors |
US5818096A (en) * | 1996-04-05 | 1998-10-06 | Nippon Telegraph And Telephone Corp. | Pin photodiode with improved frequency response and saturation output |
US5923720A (en) * | 1997-06-17 | 1999-07-13 | Molecular Metrology, Inc. | Angle dispersive x-ray spectrometer |
JP3484962B2 (en) * | 1997-12-09 | 2004-01-06 | 住友電気工業株式会社 | Light receiving element |
US6027956A (en) * | 1998-02-05 | 2000-02-22 | Integration Associates, Inc. | Process for producing planar dielectrically isolated high speed pin photodiode |
US6563851B1 (en) * | 1998-04-13 | 2003-05-13 | Ricoh Company, Ltd. | Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band |
US6352517B1 (en) * | 1998-06-02 | 2002-03-05 | Stephen Thomas Flock | Optical monitor of anatomical movement and uses thereof |
US6326300B1 (en) * | 1998-09-21 | 2001-12-04 | Taiwan Semiconductor Manufacturing Company | Dual damascene patterned conductor layer formation method |
US6326649B1 (en) * | 1999-01-13 | 2001-12-04 | Agere Systems, Inc. | Pin photodiode having a wide bandwidth |
WO2000052742A1 (en) * | 1999-03-01 | 2000-09-08 | Sensors Unlimited Inc. | Epitaxially grown p-type diffusion source for photodiode fabrication |
US6573581B1 (en) | 1999-03-01 | 2003-06-03 | Finisar Corporation | Reduced dark current pin photo diodes using intentional doping |
CA2307745A1 (en) | 1999-07-15 | 2001-01-15 | Sumitomo Electric Industries, Ltd. | Photodiode |
JP2004507881A (en) * | 2000-04-20 | 2004-03-11 | ディジラッド・コーポレーション | Manufacture of back-illuminated photodiode with low leakage current |
JP2001305365A (en) * | 2000-04-25 | 2001-10-31 | Nec Corp | Light shielding structure of stray light in optical wavelength module |
US6438296B1 (en) * | 2000-05-22 | 2002-08-20 | Lockhead Martin Corporation | Fiber optic taper coupled position sensing module |
JP3994655B2 (en) | 2000-11-14 | 2007-10-24 | 住友電気工業株式会社 | Semiconductor photo detector |
US6426991B1 (en) * | 2000-11-16 | 2002-07-30 | Koninklijke Philips Electronics N.V. | Back-illuminated photodiodes for computed tomography detectors |
US6504158B2 (en) * | 2000-12-04 | 2003-01-07 | General Electric Company | Imaging array minimizing leakage currents |
US6593636B1 (en) * | 2000-12-05 | 2003-07-15 | Udt Sensors, Inc. | High speed silicon photodiodes and method of manufacture |
TW483176B (en) * | 2001-05-31 | 2002-04-11 | United Microelectronics Corp | Method for decreasing leakage current of photodiode |
EP1270924A3 (en) * | 2001-06-28 | 2004-01-07 | Delphi Technologies, Inc. | Integrated intake manifold assembly for an internal combustion engine |
US6510195B1 (en) * | 2001-07-18 | 2003-01-21 | Koninklijke Philips Electronics, N.V. | Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same |
US6826080B2 (en) * | 2002-05-24 | 2004-11-30 | Nexflash Technologies, Inc. | Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor |
DE60321694D1 (en) * | 2002-08-09 | 2008-07-31 | Hamamatsu Photonics Kk | FOTODIODENARY ARRAY AND RADIATION DETECTOR |
US6815790B2 (en) * | 2003-01-10 | 2004-11-09 | Rapiscan, Inc. | Position sensing detector for the detection of light within two dimensions |
US7242069B2 (en) * | 2003-05-05 | 2007-07-10 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
US7880258B2 (en) * | 2003-05-05 | 2011-02-01 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
US7256470B2 (en) * | 2005-03-16 | 2007-08-14 | Udt Sensors, Inc. | Photodiode with controlled current leakage |
US7656001B2 (en) * | 2006-11-01 | 2010-02-02 | Udt Sensors, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
US7279731B1 (en) * | 2006-05-15 | 2007-10-09 | Udt Sensors, Inc. | Edge illuminated photodiodes |
US7655999B2 (en) * | 2006-09-15 | 2010-02-02 | Udt Sensors, Inc. | High density photodiodes |
US8164151B2 (en) * | 2007-05-07 | 2012-04-24 | Osi Optoelectronics, Inc. | Thin active layer fishbone photodiode and method of manufacturing the same |
US8120023B2 (en) * | 2006-06-05 | 2012-02-21 | Udt Sensors, Inc. | Low crosstalk, front-side illuminated, back-side contact photodiode array |
US7576369B2 (en) * | 2005-10-25 | 2009-08-18 | Udt Sensors, Inc. | Deep diffused thin photodiodes |
US7057254B2 (en) * | 2003-05-05 | 2006-06-06 | Udt Sensors, Inc. | Front illuminated back side contact thin wafer detectors |
KR100532281B1 (en) * | 2003-05-26 | 2005-11-29 | 삼성전자주식회사 | Side illuminated refracting-facet photodetector and method for fabricating the same |
US6762473B1 (en) * | 2003-06-25 | 2004-07-13 | Semicoa Semiconductors | Ultra thin back-illuminated photodiode array structures and fabrication methods |
JP4499386B2 (en) * | 2003-07-29 | 2010-07-07 | 浜松ホトニクス株式会社 | Manufacturing method of back-illuminated photodetector |
KR100598038B1 (en) * | 2004-02-25 | 2006-07-07 | 삼성전자주식회사 | Charge coupled device having multi anti-reflective layers and method for fabricating the multi anti-reflective layers |
JP4785433B2 (en) * | 2005-06-10 | 2011-10-05 | キヤノン株式会社 | Solid-state imaging device |
-
2010
- 2010-03-12 US US12/722,685 patent/US8035183B2/en not_active Expired - Lifetime
-
2011
- 2011-09-02 US US13/225,245 patent/US20120061788A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3936319A (en) * | 1973-10-30 | 1976-02-03 | General Electric Company | Solar cell |
US4626675A (en) * | 1982-02-22 | 1986-12-02 | International Standard Electric Corporation | Demultiplexing photodiode sensitive to plural wavelength bands |
US5457322A (en) * | 1990-11-28 | 1995-10-10 | Hitachi, Ltd. | Semiconductor radiation detection apparatus for discriminating radiation having differing energy levels |
US20010034105A1 (en) * | 2000-04-20 | 2001-10-25 | Carlson Lars S. | Technique for suppression of edge current in semiconductor devices |
US20020027239A1 (en) * | 2000-09-07 | 2002-03-07 | Nec Corporation | CMOS image sensor and manufacturing method thereof |
US6646346B1 (en) * | 2000-10-27 | 2003-11-11 | Agilent Technologies, Inc. | Integrated circuit metallization using a titanium/aluminum alloy |
US8035183B2 (en) * | 2003-05-05 | 2011-10-11 | Udt Sensors, Inc. | Photodiodes with PN junction on both front and back sides |
US20060232767A1 (en) * | 2005-04-13 | 2006-10-19 | Clifton Labs, Inc. | Method for determining wavelengths of light incident on a photodetector |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140021335A1 (en) * | 2010-09-05 | 2014-01-23 | Newport Corporation | Microprocessor based multi-junction detector system and method of use |
Also Published As
Publication number | Publication date |
---|---|
US20100264505A1 (en) | 2010-10-21 |
US8035183B2 (en) | 2011-10-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8035183B2 (en) | Photodiodes with PN junction on both front and back sides | |
US9214588B2 (en) | Wavelength sensitive sensor photodiodes | |
US8907440B2 (en) | High speed backside illuminated, front side contact photodiode array | |
US8278729B2 (en) | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays | |
US9276022B2 (en) | Low crosstalk, front-side illuminated, back-side contact photodiode array | |
US7655999B2 (en) | High density photodiodes | |
US9035412B2 (en) | Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same | |
US9691934B2 (en) | Shallow junction photodiode for detecting short wavelength light | |
US8164151B2 (en) | Thin active layer fishbone photodiode and method of manufacturing the same | |
US8816464B2 (en) | Photodiode and photodiode array with improved performance characteristics | |
US9178092B2 (en) | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: OSI OPTOELECTRONICS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BUI, PETER STEVEN;TANEJA, NARAYAN DASS;ALIABADI, MANOOCHER MANSOURI;REEL/FRAME:032593/0992 Effective date: 20100324 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |