US20120037886A1 - Light-emitting diode device - Google Patents

Light-emitting diode device Download PDF

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Publication number
US20120037886A1
US20120037886A1 US13/282,317 US201113282317A US2012037886A1 US 20120037886 A1 US20120037886 A1 US 20120037886A1 US 201113282317 A US201113282317 A US 201113282317A US 2012037886 A1 US2012037886 A1 US 2012037886A1
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Prior art keywords
light
emitting
emitting device
type semiconductor
semiconductor layer
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Abandoned
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US13/282,317
Inventor
Chia-Liang Hsu
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Epistar Corp
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Epistar Corp
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Priority claimed from TW096143129A external-priority patent/TWI400787B/en
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to US13/282,317 priority Critical patent/US20120037886A1/en
Assigned to EPISTAR CORPORATION reassignment EPISTAR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HSU, CHIA-LIANG
Publication of US20120037886A1 publication Critical patent/US20120037886A1/en
Priority to US13/614,144 priority patent/US20130003344A1/en
Priority to US13/752,423 priority patent/US20130200414A1/en
Priority to US14/553,513 priority patent/US9793451B2/en
Priority to US15/050,271 priority patent/US20160172343A1/en
Priority to US16/389,263 priority patent/US11139279B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0031—Reflecting element, sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0025—Diffusing sheet or layer; Prismatic sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages

Definitions

  • a light-emitting diode device is disclosed.
  • light-emitting diodes having transparent substrates are divided into face-up type and flip-chip type.
  • the light-emitting diodes are attached to carriers by gels or metals;
  • the light-emitting diodes are attached to carriers by metals or solders with the attached surface as the light extraction surface of the light-emitting diode or the surface parallel to it.
  • the light emitting downward is generally reflected to the front of the light extraction side by the reflecting layers or extracted from the transparent substrates.
  • the thickness of the transparent substrate should be properly adjusted so that the brightness of the light extraction is acceptable.
  • MQW multi-quantum well
  • FIG. 1 shows a schematic illustration of conventional light-emitting diode device.
  • a light-emitting diode chip 100 is attached to a carrier 3 with an attached surface 1 which is parallel to the front light extraction surface 4 of the light-emitting diode chip 100 .
  • the light emitted downward is reflected to the front light extraction surface 4 or the lateral light extraction surface 5 by the reflector 2 .
  • the disadvantage of this device is when the size of the light-emitting diode chip is larger, there are more reflected light passing through the multi-quantum well (MQW) in the light-emitting layer. The light efficiency is reduced because of light absorption.
  • MQW multi-quantum well
  • a light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.
  • FIG. 1 is an illustration of conventional light-emitting diode device.
  • FIG. 2 is a lateral view of the light-emitting structure of the present invention.
  • FIG. 3 is a lateral view of the light-emitting structure of another embodiment of the present invention.
  • FIG. 4 is a lateral view of the light-emitting device of the present invention.
  • FIG. 5 is a lateral view of the light-emitting device of another embodiment of the present invention.
  • FIG. 6 is a lateral view of the light-emitting diode device of the present invention.
  • FIG. 7 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 8 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 9 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 10 is an illustration of the backlight module of the liquid crystal display device of the present invention.
  • FIG. 11 is an illustration of another backlight module of the liquid crystal display device of the present invention.
  • FIGS. 2 and 3 show the light-emitting structures in accordance with one embodiment of the present application.
  • a structure of a light-emitting diode chip 200 includes an epitaxial structure 202 formed on the growth substrate 201 by metal-organic chemical vapor deposition (MOCVD) process or an epitaxial structure formed on the supporting substrate by a bonding process, wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 c.
  • a first electrode 203 and a second electrode 204 are disposed on the epitaxial structure 202 to form a horizontal structure of the light-emitting diode chip 200 .
  • the material of the growth substrate can be transparent material such as Sapphire, ZnO, or AlN.
  • the growth substrate can also be high thermal-dissipative materials such as diamond like carbon (DLC), graphite, Si, SiC, GaP, GaAs, or LiAlO 2 .
  • DLC diamond like carbon
  • Si Si, SiC, GaP, GaAs, or LiAlO 2 .
  • a structure of a light-emitting diode chip 300 includes an epitaxial structure 302 formed on the growth substrate 301 by metal-organic chemical vapor deposition (MOCVD) process or an epitaxial structure formed on the supporting substrate by a bonding process, wherein the epitaxial structure having a first conductivity type semiconductor layer 302 a, an active layer 302 b, and a second conductivity type semiconductor layer 302 c.
  • a first electrode 303 is formed on the first side of the epitaxial structure 302 and the second electrode 304 is formed on the second side opposite to first side of the epitaxial structure 302 to form a vertical structure of the light-emitting diode chip 300 .
  • the material of the support substrate can be transparent material or electrically insulating material such as sapphire, diamond, glass, epoxy, quartz, acrylate, ZnO, or AlN.
  • the support substrate can also be high thermal-dissipative materials or reflective materials such as Cu, Al, Mo, Cu—Sn, Cu—Zn, Cu—Cd, Ni—Sn, Ni—Co, Au alloy, diamond like carbon (DLC), graphite, carbon fiber, metal matrix composite (MMC), ceramic matrix composite (CMC), polymer matrix composite (PMC), Si, IP, ZnSe, GaAs, SiC, GaP, GaAsP, ZnSe, InP, LiGaO 2 , or LiAlO 2 .
  • FIG. 4 is an illustration of the light-emitting device 400 in accordance with one embodiment of the present application.
  • a structure of the light-emitting diode chip such as the light-emitting diode chip 200 or 300 is attached to a first surface 404 a of the transparent substrate 404 to form a light-emitting device 400 .
  • the structure of the light-emitting diode chip 200 includes a growth substrate 201 , an epitaxial structure 202 formed on the growth substrate 201 wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 c; a first electrode 203 and a second electrode 204 formed on the epitaxial structure 202 .
  • the material of the transparent substrate can be sapphire, diamond, glass, epoxy, quartz, acrylate, ZnO, AlN, or SiC.
  • FIG. 5 is an illustration of the light-emitting device 500 in accordance with one embodiment of the present application.
  • a structure of the light-emitting diode chip such as light-emitting diode chip 200 or 300 is attached to a transparent substrate 504 containing phosphor materials to form a light-emitting device 500 .
  • the structure of the light-emitting diode chip 200 includes a growth substrate 201 , an epitaxial structure 202 formed on the growth substrate 201 wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 c; a first electrode 203 and a second electrode 204 formed on the epitaxial structure 202 .
  • a phosphor layer 505 is positioned over and around the structure of the light-emitting diode chip 200 to form a light-emitting device 500 .
  • the structure of the light-emitting diode chip 200 or 300 can be attached to the transparent substrate 404 or 504 by a connecting layer (not shown in FIG. 4 and FIG. 5 ).
  • the material of the connecting layer can be an insulating material such as polyimide, BCB, PFCB, MgO, SUB, epoxy, acrylic resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, glass, Al 2 O 3 , SiO x , TiO 2 , SiN x , SOG, or other organic adhesive material.
  • the material of the connecting layer can also be a conductive material such as ITO, InO, SnO, CTO, ATO, AZO, ZTO, IZO, Ta 2 O 5 , DLC, Cu, Al, Sn, Au, Ag, Ti, Ni, Pb, Cr, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, or Au alloy, and so on.
  • the material of the connecting layer can also be a semiconductor layer such as ZnO, AlGaAs, GaN, GaP, GaAs, GaAsP, and so on.
  • FIG. 6 is a lateral view of the light-emitting diode device 10 in accordance with one embodiment of the present application.
  • the aforementioned structures of light-emitting device 400 or 500 are applicable to the light-emitting diode device 10 shown in the embodiments of the present application, and the light-emitting device 400 is chosen to describe the embodiments to avoid repeating description.
  • a carrier 601 having a reflective inside wall 602 is provided wherein the carrier can be a printed circuit board, a ceramics substrate, or a silicon substrate.
  • a transparent substrate 404 of the light-emitting device 400 is attached to a platform 603 of the carrier 601 by an adhering material, wherein the first surface 404 a of the transparent substrate 404 and its parallel surface (the second surface 404 b ) are disposed on the platform 603 .
  • the transparent substrate 404 is approximately perpendicular to the platform 603 .
  • the p and n electrode of the light-emitting device is electrically connected to a p electrode 606 and an n electrode 607 of the carrier respectively to form a light-emitting diode device 10 .
  • the light emitted from the active layer of the light-emitting device 400 is omnidirectional.
  • the light emitted to the first surface 404 a of the transparent substrate 404 is passed through the transparent substrate 404 , and emitted from the second surface 404 b of the transparent substrate 404 .
  • the light is reflected from the reflective inside wall 602 of the carrier and leaves the light-emitting diode device 10 .
  • a lens 604 can be positioned over the light-emitting diode device 10 to increase the light efficiency.
  • FIG. 7 is a lateral view of the light-emitting diode device 20 of the second embodiment of the present invention.
  • a transparent substrate 404 of a light-emitting device 400 is attached to a carrier 701 having a reflector 703 by an adhering material 704 wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate.
  • the transparent substrate 404 is approximately perpendicular to the carrier 701 .
  • the p and n electrode of the light-emitting device 400 is electrically connected to the p and n electrode of the carrier respectively.
  • the diffusers 702 are filled in the light-emitting diode device 20 to scatter the light emitted from the light-emitting device 400 .
  • the light (as the arrows indicating in FIG. 7 ) passes through the transparent substrate 404 and is emitted out from the second surface 404 b to form a lateral light-emitting diode device 20 .
  • FIG. 8 is a lateral view of the light-emitting diode device 30 of another embodiment of the present application.
  • a multi-LED structure 800 is formed by bonding two horizontal structures of the light-emitting diode chips 200 and 200 ′ back to back through a connecting layer (not shown in the figure).
  • the structure of the light-emitting diode chip 200 can comprise GaN series material which emits blue light and the structure of the light-emitting diode chip 200 ′ can comprise AlGaInP series material which emits red light.
  • an intermediate substrate 801 can be formed between the structures of the light-emitting diode chips 200 and 200 ′.
  • the intermediate substrate 801 can be a transparent growth substrate of the blue light-emitting diode chip 200 .
  • a mirror (not shown in the figure) can be further formed at one side of the intermediate substrate 801 to enhance the light extraction efficiency of the light-emitting diode device 30 .
  • the material of the connecting layer can be insulating material such as polyimide, BCB, PFCB, MgO, SU8, epoxy, Acrylic Resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, glass, Al 2 O 3 , SiO x , TiO 2 , SiN X , SOG, or other organic adhesive material.
  • insulating material such as polyimide, BCB, PFCB, MgO, SU8, epoxy, Acrylic Resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, glass, Al 2 O 3 , SiO x , TiO 2 , SiN X , SOG, or other organic adhesive material.
  • the material of the connecting layer can also be a conductive material such as ITO, MO, SnO, CTO, ATO, AZO, ZTO, IZO, Ta 2 O 5 , DLC, Cu, Al, Sn, Au, Ag, Ti, Ni, Pb, Cr, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, or Au alloy, and so on.
  • the material of the connecting layer can also be a semiconductor layer such as ZnO, AlGaAs, GaN, GaP, GaAs, GaAsP, and so on.
  • the multi-LED structure 800 is attached to the transparent substrate 404 and electrically connected to the circuit (not shown in the figure) on the transparent substrate 404 through directly bonding, solder bonding, and/or wire bonding.
  • the transparent substrate 404 of the light-emitting device 800 is further attached to a carrier 701 having a reflective surface 703 by an adhering material 704 wherein the carrier 701 is a printed circuit board, a ceramics substrate, or a silicon substrate.
  • the transparent substrate 404 is approximately perpendicular to the carrier 701 .
  • the circuit (not shown in the figure) of the transparent substrate 404 is electrically connected to a first electrode (ex. p electrode) 701 a and a second electrode (ex.
  • n electrode 701 b of the carrier 701 respectively.
  • Diffusers 702 are filled in the light-emitting diode device 30 to scatter the light emitted from the light-emitting device 800 .
  • the light (as the arrows indicating in FIG. 8 ) passes through the transparent substrate 404 and is emitted out from the second surface 404 b.
  • the structure of the light-emitting diode chip 200 and the structure of the light-emitting diode chip 200 ′ are electrically connected to each other in parallel.
  • FIG. 9 is a lateral view of the light-emitting diode device 40 of one embodiment of the present application.
  • a multi-LED structure 900 is formed by bonding one horizontal structure of the light-emitting diode chip 200 and one vertical structure of the light-emitting diode chip 300 back to back through a conductive bonding layer 901 .
  • the structure of the light-emitting diode chip 200 can comprise GaN series material which emits blue light and the structure of the light-emitting diode chip 300 can comprise AlGaInP series material which emits red light.
  • an intermediate substrate (not shown in the figure) can be formed between the structures of the light-emitting diode chips 200 and 300 .
  • the intermediate substrate can be a transparent growth substrate of the blue light-emitting diode chip 200 .
  • a mirror (not shown in the figure) can be further formed at one side of the intermediate substrate to enhance the light extraction efficiency of the light-emitting diode device 40 .
  • the multi-LED structure 900 is attached to the transparent substrate 404 and electrically connected to the circuit (not shown in the figure) on the transparent substrate 404 through directly bonding, solder bonding, and/or wire bonding.
  • the transparent substrate 404 of a light-emitting device 900 is further attached to a carrier 701 having a reflective surface 703 by an adhering material 704 wherein the carrier 701 is a printed circuit board, a ceramics substrate, or a silicon substrate.
  • the transparent substrate 404 is approximately perpendicular to the carrier 701 .
  • the circuit (not shown in the figure) of the transparent substrate 404 is electrically connected to a first electrode (ex. p electrode) 701 a and a second electrode (ex.
  • n electrode 701 b of the carrier 701 respectively.
  • the diffusers 702 are filled in the light-emitting diode device 40 to scatter the light emitted from the light-emitting device 900 .
  • the light (as the arrows indicating in FIG. 9 ) passes through the transparent substrate 404 and is emitted out from the second surface 404 b.
  • the vertical structure of the light-emitting diode chip 300 is electrically connecting to the horizontal structure of light-emitting diode chip 200 through the conductive bonding layer 901 , the structure of the light-emitting diode chip 200 and the structure of the light-emitting diode chip 300 are electrically connected to each other in series.
  • FIG. 10 is a lateral-view of a backlight module 50 of the liquid crystal display devices accompanied with any one of the embodiments of the present application.
  • a plurality of light-emitting diode devices 10 is attached to a carrier 801 having a reflecting layer 802 on the bottom by an adhering material 804 wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate.
  • the p and n electrode of the light-emitting device is electrically connected to the p and n electrode of the carrier respectively wherein the structure of the light-emitting diode device and the manufacturing method thereof is the same with illustration of FIG. 6 described above.
  • the light emitted from the plurality light-emitting diode devices passes through the thin-film material 803 with different functions, such as prism sheet, to uniformly emit the desired light, and a backlight module 30 of the liquid crystal display device is formed accordingly.
  • FIG. 11 is an illustration of another backlight module 60 coupled with a polarizer of the liquid crystal display device as shown in FIG. 10 .
  • a polarizer 902 having a reflecting layer 901 on the bottom is covered with a thin-film material 903 on the top layer.
  • the polarizer coupled with a plurality of lateral light-emitting diode device 20 to form a backlight module 60 of the liquid crystal display device.
  • the lateral light emitted from the backlight module 60 is guided to the polarizer 902 (as the arrows indicating in FIG. 11 ) wherein the downward light is reflected from the reflecting layer 901 to the polarizer 902 .
  • the mixed and polarized light is emitted through the thin-film material 903 to the other structure of the liquid crystal display device, such as liquid crystal layer wherein the emitting direction of the light is as the arrows indicating in FIG. 11 .

Abstract

A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.

Description

    BACKGROUND
  • 1. Technical Field
  • A light-emitting diode device is disclosed.
  • 2. Reference to Related Application
  • This application claims the right of priority based on TW application Ser. No. 096143129, filed Nov. 13, 2007, entitled “LIGHT-EMITTING DEVICE PACKAGE”, U.S. application Ser. No. 12/292,161, filed Nov. 13, 2008, entitled “LIGHT-EMITTING DEVICE PACKAGE”, and the contents of which are incorporated herein by reference.
  • 3. Description of the Related Art
  • Generally, light-emitting diodes (LEDs) having transparent substrates are divided into face-up type and flip-chip type. For the face-up type, the light-emitting diodes are attached to carriers by gels or metals; for flip-chip type, the light-emitting diodes are attached to carriers by metals or solders with the attached surface as the light extraction surface of the light-emitting diode or the surface parallel to it. Because the light extracted from the light-emitting layer of the light-emitting diodes are 360 degree, the light emitting downward is generally reflected to the front of the light extraction side by the reflecting layers or extracted from the transparent substrates. The thickness of the transparent substrate should be properly adjusted so that the brightness of the light extraction is acceptable. Besides, when the size of the light-emitting diodes is larger, there are more reflected light passing through the multi-quantum well (MQW) in the light-emitting layer. The light efficiency is reduced because of light absorption.
  • FIG. 1 shows a schematic illustration of conventional light-emitting diode device. As shown in FIG. 1, a light-emitting diode chip 100 is attached to a carrier 3 with an attached surface 1 which is parallel to the front light extraction surface 4 of the light-emitting diode chip 100. The light emitted downward is reflected to the front light extraction surface 4 or the lateral light extraction surface 5 by the reflector 2. The disadvantage of this device is when the size of the light-emitting diode chip is larger, there are more reflected light passing through the multi-quantum well (MQW) in the light-emitting layer. The light efficiency is reduced because of light absorption.
    • SUMMARY
  • A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings are included to provide easy understanding of the invention, and are incorporated herein and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to illustrate the principles of the invention.
  • FIG. 1 is an illustration of conventional light-emitting diode device.
  • FIG. 2 is a lateral view of the light-emitting structure of the present invention.
  • FIG. 3 is a lateral view of the light-emitting structure of another embodiment of the present invention.
  • FIG. 4 is a lateral view of the light-emitting device of the present invention.
  • FIG. 5 is a lateral view of the light-emitting device of another embodiment of the present invention.
  • FIG. 6 is a lateral view of the light-emitting diode device of the present invention.
  • FIG. 7 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 8 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 9 is a lateral view of the light-emitting diode device of another embodiment of the present invention.
  • FIG. 10 is an illustration of the backlight module of the liquid crystal display device of the present invention.
  • FIG. 11 is an illustration of another backlight module of the liquid crystal display device of the present invention.
    •  DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Reference is made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
  • FIGS. 2 and 3 show the light-emitting structures in accordance with one embodiment of the present application. Referring to FIG. 2, a structure of a light-emitting diode chip 200 includes an epitaxial structure 202 formed on the growth substrate 201 by metal-organic chemical vapor deposition (MOCVD) process or an epitaxial structure formed on the supporting substrate by a bonding process, wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 c. A first electrode 203 and a second electrode 204 are disposed on the epitaxial structure 202 to form a horizontal structure of the light-emitting diode chip 200.
  • The material of the growth substrate can be transparent material such as Sapphire, ZnO, or AlN. The growth substrate can also be high thermal-dissipative materials such as diamond like carbon (DLC), graphite, Si, SiC, GaP, GaAs, or LiAlO2.
  • Referring to FIG. 3, a structure of a light-emitting diode chip 300 includes an epitaxial structure 302 formed on the growth substrate 301 by metal-organic chemical vapor deposition (MOCVD) process or an epitaxial structure formed on the supporting substrate by a bonding process, wherein the epitaxial structure having a first conductivity type semiconductor layer 302 a, an active layer 302 b, and a second conductivity type semiconductor layer 302 c. A first electrode 303 is formed on the first side of the epitaxial structure 302 and the second electrode 304 is formed on the second side opposite to first side of the epitaxial structure 302 to form a vertical structure of the light-emitting diode chip 300.
  • The material of the support substrate can be transparent material or electrically insulating material such as sapphire, diamond, glass, epoxy, quartz, acrylate, ZnO, or AlN. The support substrate can also be high thermal-dissipative materials or reflective materials such as Cu, Al, Mo, Cu—Sn, Cu—Zn, Cu—Cd, Ni—Sn, Ni—Co, Au alloy, diamond like carbon (DLC), graphite, carbon fiber, metal matrix composite (MMC), ceramic matrix composite (CMC), polymer matrix composite (PMC), Si, IP, ZnSe, GaAs, SiC, GaP, GaAsP, ZnSe, InP, LiGaO2, or LiAlO2.
  • FIG. 4 is an illustration of the light-emitting device 400 in accordance with one embodiment of the present application. A structure of the light-emitting diode chip such as the light-emitting diode chip 200 or 300 is attached to a first surface 404 a of the transparent substrate 404 to form a light-emitting device 400. The structure of the light-emitting diode chip 200 includes a growth substrate 201, an epitaxial structure 202 formed on the growth substrate 201 wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 c; a first electrode 203 and a second electrode 204 formed on the epitaxial structure 202.
  • The material of the transparent substrate can be sapphire, diamond, glass, epoxy, quartz, acrylate, ZnO, AlN, or SiC.
  • FIG. 5 is an illustration of the light-emitting device 500 in accordance with one embodiment of the present application. A structure of the light-emitting diode chip such as light-emitting diode chip 200 or 300 is attached to a transparent substrate 504 containing phosphor materials to form a light-emitting device 500. The structure of the light-emitting diode chip 200, includes a growth substrate 201, an epitaxial structure 202 formed on the growth substrate 201 wherein the epitaxial structure having a first conductivity type semiconductor layer 202 a, an active layer 202 b, and a second conductivity type semiconductor layer 202 c; a first electrode 203 and a second electrode 204 formed on the epitaxial structure 202. Following, a phosphor layer 505 is positioned over and around the structure of the light-emitting diode chip 200 to form a light-emitting device 500.
  • As shown in FIG. 4 and FIG. 5, the structure of the light- emitting diode chip 200 or 300 can be attached to the transparent substrate 404 or 504 by a connecting layer (not shown in FIG. 4 and FIG. 5). The material of the connecting layer can be an insulating material such as polyimide, BCB, PFCB, MgO, SUB, epoxy, acrylic resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, glass, Al2O3, SiOx, TiO2, SiNx, SOG, or other organic adhesive material. The material of the connecting layer can also be a conductive material such as ITO, InO, SnO, CTO, ATO, AZO, ZTO, IZO, Ta2O5, DLC, Cu, Al, Sn, Au, Ag, Ti, Ni, Pb, Cr, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, or Au alloy, and so on. The material of the connecting layer can also be a semiconductor layer such as ZnO, AlGaAs, GaN, GaP, GaAs, GaAsP, and so on.
  • FIG. 6 is a lateral view of the light-emitting diode device 10 in accordance with one embodiment of the present application. The aforementioned structures of light- emitting device 400 or 500 are applicable to the light-emitting diode device 10 shown in the embodiments of the present application, and the light-emitting device 400 is chosen to describe the embodiments to avoid repeating description. Referring to FIG. 6, a carrier 601 having a reflective inside wall 602 is provided wherein the carrier can be a printed circuit board, a ceramics substrate, or a silicon substrate. A transparent substrate 404 of the light-emitting device 400 is attached to a platform 603 of the carrier 601 by an adhering material, wherein the first surface 404 a of the transparent substrate 404 and its parallel surface (the second surface 404 b) are disposed on the platform 603. In a preferred embodiment, the transparent substrate 404 is approximately perpendicular to the platform 603. In addition, the p and n electrode of the light-emitting device is electrically connected to a p electrode 606 and an n electrode 607 of the carrier respectively to form a light-emitting diode device 10. The light emitted from the active layer of the light-emitting device 400 is omnidirectional. The light emitted to the first surface 404 a of the transparent substrate 404 is passed through the transparent substrate 404, and emitted from the second surface 404 b of the transparent substrate 404. The light is reflected from the reflective inside wall 602 of the carrier and leaves the light-emitting diode device 10. Besides, a lens 604 can be positioned over the light-emitting diode device 10 to increase the light efficiency.
  • FIG. 7 is a lateral view of the light-emitting diode device 20 of the second embodiment of the present invention. A transparent substrate 404 of a light-emitting device 400 is attached to a carrier 701 having a reflector 703 by an adhering material 704 wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate. In a preferred embodiment, the transparent substrate 404 is approximately perpendicular to the carrier 701. The p and n electrode of the light-emitting device 400 is electrically connected to the p and n electrode of the carrier respectively. The diffusers 702 are filled in the light-emitting diode device 20 to scatter the light emitted from the light-emitting device 400. The light (as the arrows indicating in FIG. 7) passes through the transparent substrate 404 and is emitted out from the second surface 404 b to form a lateral light-emitting diode device 20.
  • FIG. 8 is a lateral view of the light-emitting diode device 30 of another embodiment of the present application. A multi-LED structure 800 is formed by bonding two horizontal structures of the light-emitting diode chips 200 and 200′ back to back through a connecting layer (not shown in the figure). The structure of the light-emitting diode chip 200 can comprise GaN series material which emits blue light and the structure of the light-emitting diode chip 200′ can comprise AlGaInP series material which emits red light. Besides, an intermediate substrate 801 can be formed between the structures of the light-emitting diode chips 200 and 200′. The intermediate substrate 801 can be a transparent growth substrate of the blue light-emitting diode chip 200. Besides, a mirror (not shown in the figure) can be further formed at one side of the intermediate substrate 801 to enhance the light extraction efficiency of the light-emitting diode device 30.
  • The material of the connecting layer can be insulating material such as polyimide, BCB, PFCB, MgO, SU8, epoxy, Acrylic Resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, glass, Al2O3, SiOx, TiO2, SiNX, SOG, or other organic adhesive material. The material of the connecting layer can also be a conductive material such as ITO, MO, SnO, CTO, ATO, AZO, ZTO, IZO, Ta2O5, DLC, Cu, Al, Sn, Au, Ag, Ti, Ni, Pb, Cr, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, or Au alloy, and so on. The material of the connecting layer can also be a semiconductor layer such as ZnO, AlGaAs, GaN, GaP, GaAs, GaAsP, and so on.
  • The multi-LED structure 800 is attached to the transparent substrate 404 and electrically connected to the circuit (not shown in the figure) on the transparent substrate 404 through directly bonding, solder bonding, and/or wire bonding. The transparent substrate 404 of the light-emitting device 800 is further attached to a carrier 701 having a reflective surface 703 by an adhering material 704 wherein the carrier 701 is a printed circuit board, a ceramics substrate, or a silicon substrate. In a preferred embodiment, the transparent substrate 404 is approximately perpendicular to the carrier 701. The circuit (not shown in the figure) of the transparent substrate 404 is electrically connected to a first electrode (ex. p electrode) 701 a and a second electrode (ex. n electrode) 701 b of the carrier 701 respectively. Diffusers 702 are filled in the light-emitting diode device 30 to scatter the light emitted from the light-emitting device 800. The light (as the arrows indicating in FIG. 8) passes through the transparent substrate 404 and is emitted out from the second surface 404 b. In this embodiment, the structure of the light-emitting diode chip 200 and the structure of the light-emitting diode chip 200′ are electrically connected to each other in parallel.
  • FIG. 9 is a lateral view of the light-emitting diode device 40 of one embodiment of the present application. A multi-LED structure 900 is formed by bonding one horizontal structure of the light-emitting diode chip 200 and one vertical structure of the light-emitting diode chip 300 back to back through a conductive bonding layer 901. The structure of the light-emitting diode chip 200 can comprise GaN series material which emits blue light and the structure of the light-emitting diode chip 300 can comprise AlGaInP series material which emits red light. Besides, an intermediate substrate (not shown in the figure) can be formed between the structures of the light-emitting diode chips 200 and 300. The intermediate substrate can be a transparent growth substrate of the blue light-emitting diode chip 200. Besides, a mirror (not shown in the figure) can be further formed at one side of the intermediate substrate to enhance the light extraction efficiency of the light-emitting diode device 40.
  • The multi-LED structure 900 is attached to the transparent substrate 404 and electrically connected to the circuit (not shown in the figure) on the transparent substrate 404 through directly bonding, solder bonding, and/or wire bonding. The transparent substrate 404 of a light-emitting device 900 is further attached to a carrier 701 having a reflective surface 703 by an adhering material 704 wherein the carrier 701 is a printed circuit board, a ceramics substrate, or a silicon substrate. In a preferred embodiment, the transparent substrate 404 is approximately perpendicular to the carrier 701. The circuit (not shown in the figure) of the transparent substrate 404 is electrically connected to a first electrode (ex. p electrode) 701 a and a second electrode (ex. n electrode) 701 b of the carrier 701 respectively. The diffusers 702 are filled in the light-emitting diode device 40 to scatter the light emitted from the light-emitting device 900. The light (as the arrows indicating in FIG. 9) passes through the transparent substrate 404 and is emitted out from the second surface 404 b. In this embodiment, because the vertical structure of the light-emitting diode chip 300 is electrically connecting to the horizontal structure of light-emitting diode chip 200 through the conductive bonding layer 901, the structure of the light-emitting diode chip 200 and the structure of the light-emitting diode chip 300 are electrically connected to each other in series.
  • FIG. 10 is a lateral-view of a backlight module 50 of the liquid crystal display devices accompanied with any one of the embodiments of the present application. A plurality of light-emitting diode devices 10 is attached to a carrier 801 having a reflecting layer 802 on the bottom by an adhering material 804 wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate. The p and n electrode of the light-emitting device is electrically connected to the p and n electrode of the carrier respectively wherein the structure of the light-emitting diode device and the manufacturing method thereof is the same with illustration of FIG. 6 described above. The light emitted from the plurality light-emitting diode devices passes through the thin-film material 803 with different functions, such as prism sheet, to uniformly emit the desired light, and a backlight module 30 of the liquid crystal display device is formed accordingly.
  • FIG. 11 is an illustration of another backlight module 60 coupled with a polarizer of the liquid crystal display device as shown in FIG. 10. A polarizer 902 having a reflecting layer 901 on the bottom is covered with a thin-film material 903 on the top layer. The polarizer coupled with a plurality of lateral light-emitting diode device 20 to form a backlight module 60 of the liquid crystal display device. The lateral light emitted from the backlight module 60 is guided to the polarizer 902 (as the arrows indicating in FIG. 11) wherein the downward light is reflected from the reflecting layer 901 to the polarizer 902. The mixed and polarized light is emitted through the thin-film material 903 to the other structure of the liquid crystal display device, such as liquid crystal layer wherein the emitting direction of the light is as the arrows indicating in FIG. 11.

Claims (15)

What is claimed is:
1. A light-emitting device, comprising:
a carrier comprising a platform;
a transparent substrate formed on the platform comprising a first surface;
a multi-LED structure, comprising:
a first light-emitting structure formed on the first surface, comprising:
a first first-type semiconductor layer;
a first second-type semiconductor layer; and
a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer;
a second light-emitting structure formed on the first surface, comprising:
a second first-type semiconductor layer;
a second second-type semiconductor layer; and
a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and
a connecting layer formed between the first light-emitting structure and the second light-emitting structure;
wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.
2. The light-emitting device according to claim 1, wherein the angle between the first surface of the transparent substrate and the platform is 45-135 degree.
3. The light-emitting device according to claim 1, wherein the first light-emitting structure is electrically connected to the second light-emitting structure in series.
4. The light-emitting device according to claim 1, wherein the first light-emitting structure is electrically connected to the second light-emitting structure in parallel.
5. The light-emitting device according to claim 1, further comprising a reflective layer between the first light-emitting structure and the second light-emitting structure.
6. The light-emitting device according to claim 1, further comprising an adhering material adhering the transparent substrate to the platform.
7. The light-emitting device according to claim 1, further comprising a lens positioned over the carrier.
8. The light-emitting device according to claim 1, wherein the carrier further comprising a reflecting layer formed on the inner surface of the carrier.
9. The light-emitting device according to claim 1, wherein the transparent substrate further comprising a phosphor material.
10. The light-emitting device according to claim 1, wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate.
11. The light-emitting device according to claim 1, wherein the first light-emitting structure comprises GaN series material and the second light-emitting structure comprises AlGaInP series material.
12. The light-emitting device according to claim 1, wherein the multi-LED structure further comprises an intermediate substrate formed between the first light-emitting structure and the second light-emitting structure.
13. The light-emitting device according to claim 12, wherein the transparent substrate and/or the intermediate substrate comprises sapphire, diamond, glass, polymer, epoxy, quartz, acrylate, ZnO, AlN, or SiC.
14. The light-emitting device according to claim 1, wherein the multi-LED structure is separated from the platform by a predetermined distance.
15. The light-emitting device according to claim 1, wherein the connecting layer comprises a conductive material, a semiconductor material, or a non-conductive material.
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US13/282,317 US20120037886A1 (en) 2007-11-13 2011-10-26 Light-emitting diode device
US13/614,144 US20130003344A1 (en) 2007-11-13 2012-09-13 Light-emitting device package
US13/752,423 US20130200414A1 (en) 2011-10-26 2013-01-29 Light-emitting diode device
US14/553,513 US9793451B2 (en) 2011-10-26 2014-11-25 Light-emitting diode device
US15/050,271 US20160172343A1 (en) 2007-11-13 2016-02-22 Light-Emitting Diode Device
US16/389,263 US11139279B2 (en) 2007-11-13 2019-04-19 Light-emitting diode device

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