US20110121758A1 - Tunable white point light source using a wavelength converting element - Google Patents
Tunable white point light source using a wavelength converting element Download PDFInfo
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- US20110121758A1 US20110121758A1 US13/015,916 US201113015916A US2011121758A1 US 20110121758 A1 US20110121758 A1 US 20110121758A1 US 201113015916 A US201113015916 A US 201113015916A US 2011121758 A1 US2011121758 A1 US 2011121758A1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/04—Arrangement of electric circuit elements in or on lighting devices the elements being switches
- F21V23/0442—Arrangement of electric circuit elements in or on lighting devices the elements being switches activated by means of a sensor, e.g. motion or photodetectors
- F21V23/0457—Arrangement of electric circuit elements in or on lighting devices the elements being switches activated by means of a sensor, e.g. motion or photodetectors the sensor sensing the operating status of the lighting device, e.g. to detect failure of a light source or to provide feedback to the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/20—Controlling the colour of the light
- H05B45/22—Controlling the colour of the light using optical feedback
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
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Abstract
A uniform high brightness light source is provided using a plurality of light emitting diode (LED) chips with slightly different pump wavelengths with a wavelength converting element that includes at least two different wavelength converting materials that convert the light to different colors of light. The intensity of the light produced by the LED chips may be varied to provide a tunable CCT white point. The wavelength converting element may be, e.g., a stack or mixture of phosphor or luminescent ceramics. Moreover, the manufacturing process of the light source is simplified because the LED chips are all manufactured using the same technology eliminating the need to manufacture different types of chips.
Description
- The present invention is related to a light source that produces white light and in particular to a light source using multiple light emitting diodes that produces light having a desired correlated color temperature (CCT).
- Recently there has been a trend in replacing conventional incandescent light bulbs with light emitting diodes (LEDs). For example, traffic control signals and automobile brake lights are now manufactured using LEDs. The replacement of conventional incandescent light bulbs with one or more LEDs is desirable because incandescent bulbs are inefficient relative to LEDs, e.g., in terms of energy use and longevity.
- Certain lighting applications, however, pose particular problems for replacing incandescent bulbs with LEDs. For example, some highly noticeable lighting applications, such as accent or spot lamps, require white light with a particular correlated color temperature (CCT). Replacing incandescent light bulbs with LEDs in such lighting applications is problematic because of the difficulty in controlling the spectral distribution, i.e. the CCT or white point, of the LEDs. Moreover, when replacing incandescent light bulbs, it is important that the LED light source have a compact form factor, e.g., that is no larger than the incandescent light bulbs, which increases complications. Further, there is a desire for color tunable lamps, which can be adjusted, e.g., for mood, scene and personal preferences. Accordingly, improvements in LED light sources that can produce white light is desired.
- In accordance with an embodiment of the present invention, a tunable CCT white point light source is produced light source is provided using a plurality of LED chips with slightly different pump wavelengths with a wavelength converting element that includes at least two different wavelength converting materials that convert the light to different colors of light. The wavelength converting element receives the light from the plurality of LED chips and converts at least a portion of the light to different colors. The wavelength converting element may be, e.g., a stack or mixture of phosphor or luminescent ceramics. The intensity of the light produced by the LED chips may be altered to vary the intensity of at least one color of light converted by the wavelength converting element to control the white point of the resulting light. Moreover, with the use of same type of LED chips, the plurality of LED chips can be mounted close together on one or more submounts resulting in a compact, high brightness design.
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FIG. 1 is a side view of a light source, in accordance with an embodiment of the present invention. -
FIG. 2 illustrates a perspective view of an array of LEDs that may be used with the light source. -
FIG. 3 illustrates a side view of an accent lamp that uses different colored LEDs andFIG. 4 illustrates a top plan view of the LEDs used in the accent lamp ofFIG. 3 . -
FIGS. 5-8 schematically illustrate side views of different embodiments of the wavelength converting element. -
FIG. 9 is a graph illustrating the absorption and emission spectra for green, red and YAG phosphor plates, which may be stacked or mixed to form wavelength converting element. -
FIG. 10 is another embodiment of a light source. - In accordance with an embodiment of the present invention, a uniform high brightness light source with a tunable CCT white point is produced using a wavelength converting element along with plurality of light emitting diode chips with slightly different pump wavelengths. The wavelength converting element includes at least two different wavelength converting materials that convert light to different colors of light and may be, e.g., a stack or mixture of phosphor or luminescent ceramics. Because the CCT of the resulting device can be controlled to produce a pleasing white light, the light source may be suitable for, e.g., spot or accent lamp type applications or other applications in which a compact white light source is desired.
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FIG. 1 is a side view of alight source 100, in accordance with an embodiment of the present invention.Light source 100 can produce light having a tunable CCT white point, which may be used, e.g., as an accent light application.Light source 100 includes an array ofLEDs 102 that may be mounted to aheat sink 104. Awavelength converting element 110 is mounted over the array ofLEDs 102 and is held, e.g., bysupports 105 that are mounted to or integrally formed from theheat sink 104.Reflector optics 106 are positioned to focus the light from thewavelength converting element 110 and to form the desired light distribution pattern. Thereflector optics 106 may be mounted to theheat sink 104, e.g., viasupports 105, or otherwise optically coupled to receive the light from thewavelength converting element 110. In one embodiment, anintensity detector 120 may be mounted to thereflector optics 106 and coupled to adrive circuit 122. Theintensity detector 120 may be, e.g., a spectrometer or in another embodiment, more than one detectors may be used with spectral filters having different ranges of wavelengths, as illustrated bydetector 121. Theintensity detector 120 measures the intensity of the light being produced by thewavelength converting element 110 and in response thedrive circuit 122 controls the intensity of theindividual LEDs 102 in the array. By way of example, thedrive circuit 122 may use pulse modulation or current control to alter the intensity of a certain die. Alternatively, thedrive circuit 122 may simply turn off or increase power to certain die. - The
LEDs 102 in the array produce light having the same general color, e.g., blue, but that intentionally differ in wavelength by an appreciable amount, e.g., by approximately 5 nm, 10 nm, 20 nm, or more, but less than approximately 50 nm. The use of LEDs that have the same color is advantageous as all the LEDs may be manufactured using the same die technology. Accordingly, the general manufacturing process is simplified as different types of LEDs need not be manufactured. Moreover, the mounting ofLEDs 102 is simplified because the mounting requirements for all theLEDs 102 are the same. Consequently, theLEDs 102 may be mounted near each other on the same submount. If desired more than one submount may be used, as illustrated bybroken line 103. It should be understood that LEDs may be grouped electrically, where within a group the LEDs differ less by less than approximately 5 nm, i.e., they are from the same bin, but other LEDs or groups of LEDs in the array differ by approximately 5 nm or more. -
FIG. 2 illustrates a perspective view of an array ofLED chips 102 that may be used with thelight source 100. As discussed above, theLEDs 102 are produced from the same die technology, which permits the dice to be placed close together on at least onesubmount 130, thereby improving luminance. Electrostatic discharge (ESD) circuits 131 are also mounted on thesubmount 130. Thesubmount 130, which may be ceramic or other appropriate material is attached to a direct bond copper (DBC)substrate 132 with a plurality ofelectrical leads 134. TheDBC substrate 132 is connected to theheat sink 104, shown inFIG. 1 , by a mechanical fastener or other appropriate mechanism, such as epoxy. As discussed above, two or more of theLEDs 102 emit light within the same general color, e.g., blue, but that have slightly different wavelengths. By way of example,LEDs - By way of comparison,
FIG. 3 illustrates a side view of anaccent lamp 10 that uses differentcolored LEDs 12 andFIG. 4 illustrates a top plan view of thoseLEDs 12.Lamp 10 uses different types ofLEDs 12, e.g.,blue LEDs 12 b,green LEDs 12 g, andred LEDs 12 r to produce the different colors desired. TheLEDs 12 are mounted on aheat sink 14. Because theLEDs 12 produce different colored light, an integratingrod 16 is used to mix the produced light. The outline of the integratingrod 16 is illustrated inFIG. 4 with a circular dotted line, but the integratingrod 16 may have another geometrical shape, such as hexagonal. As illustrated inFIG. 3 , alens 18 is coupled to the end of the integratingrod 16 and is used to produce the desired distribution of light. - In comparison to the
light source 100 described above, the use of different types ofLEDs 12 may result in reduced luminance, as well as an increase in the difficulties of manufacturing. For example, the different types ofLEDs 12 must be manufactured separately. Moreover, the different types ofLEDs 12 must contend with different mounting requirements. Accordingly, as illustrated inFIG. 4 , thedifferent LEDs 12 are mounted onseparate submounts 13 increasing the area of the light source because of the relatively large gaps between theLEDs 12. Accordingly, thelamp 10 suffers from a loss in brightness as well as a loss in compactness. Further, because theLEDs 12 produce different colored light, the light must be mixed using, e.g., along integration rod 16, resulting in alarge accent lamp 10. - Referring back to
FIG. 1 , thewavelength converting element 110 includes two or more wavelength converting materials. By way of example, thewavelength converting element 110 may be a stack of different wavelength converting materials, e.g., a stack of multiple phosphor layers, or alternatively may be a single layer that contains a mixture of multiple phosphors. In one embodiment, thewavelength converting element 110 may be a stack of different luminescent ceramics or may be a single luminescent ceramic that contains a mixture of different types of luminescent material. By way of example, luminescent ceramics that include YAG, SSON, BSSN and/or eCAS may be used. Thus, thewavelength converting element 110 produces light that is well combined and does not require the use of integration optics. Accordingly, thelight source 100 may have a compact design and produce uniform light. -
FIGS. 5-8 schematically illustrate side views of different embodiments of thewavelength converting element 110 that is held by supports 5 over the array ofLEDs 102.FIG. 5 , for example, illustrates thewavelength converting element 110 as including a stack of differentwavelength converting layers layers Wavelength converting layers FIG. 6 illustrates the multicolorwavelength converting element 110 as asingle layer 114 that contains a mixture of, e.g., Green, Red, and Yellow emitting materials. As illustrated inFIG. 7 , other embodiments of thewavelength converting element 110 are possible, such as positioning the differentwavelength converting materials FIG. 8 illustrates another embodiment in which thewavelength converting element 110 includes horizontally positionedwavelength converting materials aperture 110 a through which unconverted pump light is emitted. - It should be understood that
FIGS. 5-8 are examples of thewavelength converting element 110 that includes two or more wavelength converting materials. If desired, different embodiments or combinations of the different embodiments shown inFIGS. 5-8 may be used. For example,FIGS. 5 and 6 may be combined to produce a stack of wavelength converting layers, in which one layer contains a mixture of two or more wavelength converting materials. Alternatively, horizontally positioned wavelength converting materials and/or an aperture (e.g.,FIGS. 7 and 8 ) may be included with the stack or mixture of wavelength converting materials (e.g.,FIGS. 5 and 6 ). The wavelength converting materials may be spray coated or screen printed on a separate carrier plate. By way of example, in the case of screen printing, the different wavelength converting materials may be printed as different dots next to each other. For color mixing purposes, it may be beneficial for there to be a distance between the wavelength converting materials and the LEDs. - The two or more wavelength converting materials in the
wavelength converting element 110 have different absorption and excitation characteristics. By altering the intensity of the light from two ormore LEDs 102 that differs in wavelength by an appreciable amount, the spectral distribution of the resulting light, i.e., the forward emitted light from thewavelength converting element 110 and the pump light from theLEDs 102 transmitted through thewavelength converting element 110, may be controlled to produce a desired white point CCT around a nominal value. -
FIG. 9 is a graph illustrating the absorption and emission spectra for green, red and YAG phosphor plates, which may be stacked or mixed to formwavelength converting element 110. As can be seen, the YAG has relatively narrow absorption spectra while the red and green phosphors have much wider absorption spectra. -
FIG. 9 also illustrates withbroken lines 430 nm, 450 nm, and 470 nm wavelengths that may be produced byLEDs LEDs 102, the color point of the light produced by thelight source 100 can be altered. For example, by varying the intensity of the blue light at 450 nm, the ratio of the YAG (yellow) converted light with respect to the Red (and Green) converted light can be altered. If theLEDs 102 produce blue light having a greater intensity at the wavelengths absorbed by the YAG, i.e., 450 nm, the YAG emission will increase thereby producing a warmer white color point. By reducing the intensity of the 450 nm blue light, less light is absorbed by the YAG, causing a decrease in the emission of the YAG and a cooler white color point. Similarly, variation of the intensity of the other wavelengths, i.e., 430 nm and 470 nm, may also be used to vary the color point of the resulting light. - The adjustment of the intensity of the light produced by
LEDs 102 may be performed during manufacturing of thelight source 100, i.e., by testing the light produced by the assembledlamp 100 and adjusting and setting the intensity of thedifferent LEDs intensity detector 120 may be used as illustrated inFIG. 1 . In another embodiment, thewavelength converting element 110 may be adjusted, e.g., by changing one of the wavelength converting layers in the stack to have a desired thickness, to produce the desired CCT of the resulting light. In another application, the end user is permitted to adjust the color of the lamp according the end user's needs or desires, by changing the ratio of currents to the different LEDs (or groups of LEDs). -
FIG. 10 is another embodiment of alight source 200 that includes an array ofLEDs 202, which includes at least two LEDs that emit light having the same general color but appreciably different wavelengths and awavelength converting element 210 that includes at least two different wavelength converting materials. The array ofLEDs 202 is mounted on a heat sink 204. Acollimator element 206 approximately collimates the light emitted by theLEDs 202, which is transmitted through awavelength selection element 208, such as a dichroic filter, which, e.g., transmits blue light and reflects longer wavelengths. Aconcentrator element 209 concentrates the light to be incident on thewavelength converting element 210. Any back emitted light from thewavelength converting element 210 is recycled by thewavelength selection element 208, which reflects the light back to thewavelength converting element 210. Areflector element 212 is positioned to focus the light from thewavelength converting element 210 and to form the desired light distribution pattern. As illustrated inFIG. 10 , thelight source 200 may include anintensity detector 220 and drivecircuit 222, if desired, which may be similar to that described in reference tolight source 100. - Although the present invention is illustrated in connection with specific embodiments for instructional purposes, the present invention is not limited thereto. Various adaptations and modifications may be made without departing from the scope of the invention. Therefore, the spirit and scope of the appended claims should not be limited to the foregoing description.
Claims (28)
1. A light source comprising:
at least two light emitting diode chips, each of which produces light having wavelengths that differ by 5 nm or more; and
a wavelength converting element mounted to receive the light emitted by the at least two light emitting diode chips, the wavelength converting element comprising at least two different wavelength converting materials that convert the light from the at least two light emitting diode chips to different colors of light.
2. The light source of claim 1 , wherein the wavelength converting element comprises a stack of wavelength converting films.
3. The light source of claim 1 , wherein the wavelength converting element comprises a mixture of the different wavelength converting materials that convert the light from the at least two light emitting diode chips to different colors of light.
4. The light source of claim 3 , wherein the mixture of the different wavelength converting materials is approximately homogenous.
5. The light source of claim 1 , wherein the wavelength converting element comprises one or more luminescent ceramics.
6. The light source of claim 1 , wherein the wavelength converting element comprises one or more phosphor layers.
7. The light source of claim 1 , further comprising at least one submount, the at least two light emitting diode chips mounted to the at least one submount.
8. The light source of claim 7 , further comprising:
a heat sink, the at least one submount being mounted on the heat sink; and
a support that is coupled to the heat sink, the support holding the wavelength converting element.
9. The light source of claim 7 , wherein the at least one submount is one submount and the at least two light emitting diode chips are mounted on the one submount.
10. The light source of claim 1 , further comprising:
at least one light detector positioned to receive light produced by the wavelength converting element and producing a signal in response to the intensity of the light detected; and
a drive circuit coupled to the at least two light emitting diode chips and the at least one light detector, the drive circuit controlling the intensity of the light emitted by at least one of the light emitting diode chips in response to the signal produced by the at least one light detector.
11. The light source of claim 1 , further comprising a wavelength selection element positioned between the at least two light emitting diode chips and the wavelength converting element.
12. The light source of claim 11 , further comprising:
a collimator element positioned between the at least two light emitting diode chips and the wavelength selection element; and
a concentrator element positioned between the wavelength selection element and the wavelength converting element.
13. The light source of claim 1 , wherein the at least two light emitting diode chips produce light having wavelengths that differ by 50 nm or less.
14. A method comprising:
producing light from a plurality of light emitting diode chips, each chip producing light with a different range of wavelengths that differ by more than approximately 5 nm;
converting portions of the light from the plurality of light emitting diode chips to at least two different colors of light using a wavelength converting element and transmitting other portions of the light from the plurality of light emitting diode chips through the wavelength converting element to produce a combined converted and transmitted light; and
controlling the white point of the combined converted and transmitted light by altering an intensity of the light from at least one light emitting diode chip to vary an intensity of at least one color of light converted by the wavelength converting element.
15. The method of claim 14 , further comprising mounting the plurality of light emitting diode chips on at least one submount.
16. The method of claim 15 , further comprising:
mounting the at least one submount to a heat sink; and
mounting the wavelength converting element over the plurality of light emitting diode chips on a support that is coupled to the heat sink.
17. The method of claim 14 , wherein converting portions of the light from the plurality of light emitting diode chips is performed in a stack of wavelength converting films that form the wavelength converting element.
18. The method of claim 17 , wherein the stack of wavelength converting films comprises one or more luminescent ceramics.
19. The method of claim 14 , wherein the stack of wavelength converting films comprises one or more phosphor layers.
20. The method of claim 14 , wherein converting portions of the light from the plurality of light emitting diode chips is performed by a mixture of a different wavelength converting materials in the wavelength converting element.
21. The method of claim 20 , wherein the mixture of the different wavelength converting materials is approximately homogenous.
22. The method of claim 14 , further comprising:
detecting the combined converted and transmitted light and producing a signal in response; and
altering an intensity of the light from at least one light emitting diode chip in response to the signal produced by the light detector.
23. The method of claim 22 , wherein the detecting and altering are performed continuously or periodically.
24. The method of claim 22 , wherein the detecting and altering are performed once.
25. The method of claim 14 , further comprising transmitting light from a plurality of light emitting diode chips through a wavelength selection element and reflecting back converted light from the wavelength converting element by the wavelength selection element.
26. The method of claim 25 , further comprising:
approximately collimating the light from a plurality of light emitting diode chips prior to being transmitted through the wavelength selection element; and
concentrating the light from a plurality of light emitting diode chips after being transmitted through the wavelength selection element and prior to being incident on the wavelength converting element.
27. The method of claim 14 , the method further comprising producing light from at least one group of light emitting diode chips, each chip within a group producing light with a range of wavelengths that differ by less than approximately 5 nm.
28. The method of claim 14 , wherein each chip produces light with a different range of wavelengths that differ by less than approximately 50 nm.
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US13/015,916 US20110121758A1 (en) | 2006-12-15 | 2011-01-28 | Tunable white point light source using a wavelength converting element |
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US11/611,351 US7902560B2 (en) | 2006-12-15 | 2006-12-15 | Tunable white point light source using a wavelength converting element |
US13/015,916 US20110121758A1 (en) | 2006-12-15 | 2011-01-28 | Tunable white point light source using a wavelength converting element |
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US13/015,916 Abandoned US20110121758A1 (en) | 2006-12-15 | 2011-01-28 | Tunable white point light source using a wavelength converting element |
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US11/611,351 Active 2028-09-11 US7902560B2 (en) | 2006-12-15 | 2006-12-15 | Tunable white point light source using a wavelength converting element |
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EP (1) | EP2102909A1 (en) |
JP (1) | JP2010514153A (en) |
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CN (2) | CN102439721A (en) |
BR (1) | BRPI0720065A2 (en) |
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Also Published As
Publication number | Publication date |
---|---|
CN102439721A (en) | 2012-05-02 |
TW200843145A (en) | 2008-11-01 |
KR20090096627A (en) | 2009-09-11 |
CN105428344A (en) | 2016-03-23 |
EP2102909A1 (en) | 2009-09-23 |
US20080142816A1 (en) | 2008-06-19 |
BRPI0720065A2 (en) | 2013-12-17 |
RU2009127111A (en) | 2011-01-20 |
WO2008072196A1 (en) | 2008-06-19 |
TWI497744B (en) | 2015-08-21 |
JP2010514153A (en) | 2010-04-30 |
US7902560B2 (en) | 2011-03-08 |
RU2468472C2 (en) | 2012-11-27 |
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