US20100278954A1 - Method of Concurrently Patterning a Substrate Having a Plurality of Fields and a Plurality of Alignment Marks - Google Patents
Method of Concurrently Patterning a Substrate Having a Plurality of Fields and a Plurality of Alignment Marks Download PDFInfo
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- US20100278954A1 US20100278954A1 US12/835,018 US83501810A US2010278954A1 US 20100278954 A1 US20100278954 A1 US 20100278954A1 US 83501810 A US83501810 A US 83501810A US 2010278954 A1 US2010278954 A1 US 2010278954A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/003—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/58—Measuring, controlling or regulating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/703—Gap setting, e.g. in proximity printer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
- B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
- B29C2043/025—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/14—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles in several steps
- B29C2043/141—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles in several steps for making single layer articles
- B29C2043/142—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles in several steps for making single layer articles by moving a single mould or the article progressively, i.e. portionwise
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/58—Measuring, controlling or regulating
- B29C2043/5825—Measuring, controlling or regulating dimensions or shape, e.g. size, thickness
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/887—Nanoimprint lithography, i.e. nanostamp
Definitions
- Nano-fabrication involves the fabrication of very small structures, e.g., having features on the order of nanometers or smaller.
- One area in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits.
- nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed.
- Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like.
- An exemplary nano-fabrication technique is commonly referred to as imprint lithography.
- Exemplary imprint lithography processes are described in detail in numerous publications, such as U.S. patent application publication no. 2004/0065976 filed as U.S. patent application Ser. No. 10/264,960; U.S. patent application publication no. 2004/0065252 filed as U.S. patent application Ser. No. 10/264,926; and U.S. Pat. No. 6,936,194, entitled “Functional Patterning Material for Imprint Lithography Processes,” all of which are assigned to the assignee of the present invention.
- the imprint lithography technique disclosed in each of the aforementioned U.S. patent application publications and U.S. patent includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate.
- the substrate may be positioned upon a stage to obtain a desired position to facilitate patterning thereof.
- a mold is employed spaced-apart from the substrate with a formable liquid present between the mold and the substrate.
- the liquid is solidified to form a patterned layer that has a pattern recorded therein that is conforming to a shape of the surface of the mold in contact with the liquid.
- the mold is then separated from the patterned layer such that the mold and the substrate are spaced-apart.
- the substrate and the patterned layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the patterned layer.
- FIG. 1 is a simplified side view of a lithographic system having a template spaced-apart from a substrate;
- FIG. 2 is a simplified side view of the substrate shown in FIG. 1 , having a patterned layer positioned thereon;
- FIG. 3 is a top down view of the template shown in FIG. 1 ;
- FIG. 4 is a flow chart of a method of forming the template shown in FIG. 1 ;
- FIG. 5 is a top down view of a master template formed from e-beam lithography, the master template employed to form template shown in FIG. 1 ;
- FIG. 6 is a top down view of an intermediate substrate formed from the master template shown in FIG. 1 ; the intermediate substrate having a first field formed and a plurality of substrate alignment marks;
- FIG. 7 is a top down view of the substrate alignment marks shown in FIG. 6 ;
- FIG. 8 is a top down view of the master template, shown in FIG. 1 , in superimposition with a portion of the intermediate substrate, shown in FIG. 6 , with a mesa of the master template being in superimposition with a second field of the intermediate substrate;
- FIG. 9 is a top down view of the master template, shown in FIG. 1 , in superimposition with a portion of the intermediate substrate, shown in FIG. 6 , with a mesa of the master template being in superimposition with a third field of the intermediate substrate;
- FIG. 10 is a top down view of the master template, shown in FIG. 1 , in superimposition with a portion of the intermediate substrate, shown in FIG. 6 , with a mesa of the master template being in superimposition with a fourth field of the intermediate substrate;
- FIG. 11 is a top down view of the intermediate substrate, shown in FIG. 6 , with a plurality of alignment marks being formed thereon prior to patterning the intermediate substrate;
- FIG. 12 is a top down view of the master template, the master template having 9 fields associated therewith.
- Substrate 12 may be coupled to a substrate chuck 14 .
- Substrate chuck 14 may be any chuck including, but not limited to, vacuum, pin-type, groove-type, or electromagnetic, as described in U.S. Pat. No. 6,873,087 entitled “High-Precision Orientation Alignment and Gap Control Stages for Imprint Lithography Processes,” which is incorporated herein by reference.
- substrate chuck 14 may be a chuck as described in U.S. Pat. No. 6,982,783 entitled “Chucking System for Modulating Shapes of Substrates” and U.S. Pat. No.
- Substrate 12 and substrate chuck 14 may be supported upon a stage 16 . Further, stage 16 , substrate 12 , and substrate chuck 14 may be positioned on a base (not shown). Stage 16 may provide motion along the x and y axes.
- a template 18 Spaced-apart from substrate 12 is a template 18 having a mold 20 extending therefrom towards substrate 20 with a patterning surface 22 thereon.
- mesa 20 may be referred to as a mold 20 .
- Mesa 20 may also be referred to as a nanoimprint mold 20 .
- template 18 may be substantially absent of mold 20 .
- Template 18 and/or mold 20 may be formed from such materials including but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, and hardened sapphire.
- patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and protrusions 26 .
- Template 18 may be coupled to a template chuck 28 , template chuck 28 being any chuck including, but not limited to, vacuum, pin-type, groove-type, or electromagnetic, as described in U.S. Pat. No. 6,873,087.
- substrate chuck 14 may be a chuck as described in U.S. Pat. No. 6,982,783 and U.S. Pat. No. 6,980,282.
- Template chuck 28 may be coupled to an imprint head 30 to facilitate movement of template 18 and mold 20 .
- System 10 further comprises a fluid dispense system 32 .
- Fluid dispense system 32 may be in fluid communication with substrate 12 so as to deposit a polymeric material 34 thereon.
- System 10 may comprise any number of fluid dispensers and fluid dispense system 32 may comprise a plurality of dispensing units therein.
- Polymeric material 34 may be positioned upon substrate 12 using any known technique, e.g., drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and the like. As shown, polymeric material 34 may be deposited upon substrate 12 as a plurality of spaced-apart droplets 36 . Typically, polymeric material 34 is disposed upon substrate 12 before the desired volume is defined between mold 20 and substrate 12 . However, polymeric material 34 may fill the volume after the desired volume has been obtained.
- system 10 further comprises a source 38 of energy 40 coupled to direct energy 40 along a path 42 .
- Imprint head 30 and stage 16 are configured to arrange mold 20 and substrate 12 , respectively, to be in superimposition and disposed in path 42 .
- Either imprint head 30 , stage 16 , or both vary a distance between mold 20 and substrate 12 to define a desired volume therebetween such that mold 20 contacts polymeric material 34 and the desired volume is filled by polymeric material 34 . More specifically, polymeric material 34 of droplets 36 may ingress and fill recesses 24 of mold 20 .
- source 38 produces energy 40 , e.g., broadband ultraviolet radiation that causes polymeric material 34 to solidify and/or cross-link conforming to the shape of a surface 44 of substrate 12 and patterning surface 22 , defining a patterned layer 46 on substrate 12 .
- Patterned layer 46 may comprise a residual layer 48 and a plurality of features shown as protrusions 50 and recessions 52 .
- System 10 may further comprise an actuation system 58 surrounding template 18 /mold 20 to facilitate alignment and overlay registration between mold 20 and substrate 12 .
- Actuation system 58 facilitates alignment and overlay registration by selectively deforming template 18 /mold 20 . This facilitates correcting various parameters of the pattern shape, i.e., magnification characteristics, skew/orthogonality characteristics, and trapezoidal characteristics.
- An example of an actuation system 58 is described in U.S. Pat. No. 7,150,622 entitled “Systems for Magnification and Distortion Correction for Imprint Lithography Processes”; U.S. Pat. No.
- System 10 may be regulated by a processor 54 that is in data communication with stage 16 , imprint head 30 , fluid dispense system 32 , source 38 , and actuation system 58 operating on a computer readable program stored in memory 56 .
- mold 20 of template 18 is shown comprising a plurality of dies 60 , shown as dies 60 a - 60 d .
- mold 20 may comprise any number of dies, i.e., 2, 4, 6, 8, or 9 dies.
- each of dies 60 a - 60 d may have substantially the same relief structure 61 formed therein.
- formation of dies 60 of mold 20 may be formed employing e-beam lithography.
- employing e-beam lithography may result in, inter alia, increased formation time of template 18 , which may be undesirable.
- a method of minimizing formation time of dies 60 of mold 20 is described below.
- a method of forming dies 60 of mold 20 is shown. More specifically at step 100 , a master template 62 may be formed employing e-beam lithography. Master template 62 comprises a plurality of sections 64 , shown as sections 64 a - 64 d . However, in a further embodiment, master template 62 may comprise any number of sections 64 , i.e., 2, 4, 6, 8, or 9 sections. Each section of sections 64 may be separated from an adjacent section of sections 64 by a street 66 . Further, each of sections 64 may be separated from a perimeter 68 of master template 62 by a street 70 .
- a section of sections 64 may comprises a mesa 72 having a relief pattern 74 defined therein. As shown, mesa 72 may be positioned in section 64 a , however, in a further embodiment, mesa 72 may be positioned in any section of sections 64 .
- Mesa 72 comprises sides 76 a , 76 b , 76 c , and 76 d , with side 76 a being positioned opposite to side 76 c and side 76 b being positioned opposite to side 76 d .
- master template 62 may have a thickness of equal to or greater than 4 mm.
- Master template 62 may further comprise a plurality of alignment forming areas 78 and template alignment marks 80 .
- Alignment forming areas 78 and template alignment marks 80 may be positioned within streets 66 and 70 .
- alignment forming areas 78 and template alignment marks 80 may be positioned on a plurality of mesas.
- alignment forming areas 78 may comprise checkerboard forming alignment marks and template alignment marks 80 may comprise grating alignment marks.
- template alignment marks 80 may be substantially planar.
- a first subset of alignment forming areas 78 and template alignment marks 80 defining a first pattern 82 a .
- positioned proximate each of sides 76 a , 76 b , 76 c , and 76 d are two alignment forming areas 78 and two template alignment marks 80 .
- any number of alignment forming areas 78 and template alignment marks 80 may be positioned proximate sides 76 a , 76 b , 76 c , and 76 d.
- Master template 62 may further comprise alignment forming areas 78 and template alignment marks 80 positioned in streets 66 and 70 proximate to the remaining sections 64 of master template 62 . More specifically, a second, third, and fourth subsets of alignment forming areas 78 and template alignment marks 80 may be positioned in streets 66 and 70 proximate to sections 64 b , 64 c , and 64 d , respectively, defining a second pattern 82 b , a third pattern 82 c , and a fourth pattern 82 d , respectively.
- the first pattern 82 a may be substantially the same as the third pattern 82 c and the second pattern 82 b may be substantially the same as the fourth pattern 82 d . Further, the first and third patterns 82 a and 82 c may be differ from the second and fourth patterns 82 b and 82 d.
- polymeric material 34 may be positioned on a intermediate substrate 84 by drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and the like.
- intermediate substrate 84 may comprise a plurality of fields 86 , shown as fields 86 a - 86 d .
- intermediate substrate 84 may comprises any number of fields 86 , i.e. 2, 4, 6, 8, or 9 fields.
- the number of fields 86 of intermediate substrate 84 may be substantially the same as the number of sections 64 of mater template 62 .
- polymeric material 34 may be positioned on field 586 a . Furthermore, polymeric material 34 may be positioned on a plurality of regions 88 , with regions laying 88 outside of fields 86 a - 86 d .
- intermediate substrate 84 may have a thickness of in a range of 0.05 mm to 3 mm.
- a desired spatial relationship may be obtained between master template 62 and intermediate substrate 84 , and more specifically, between field 86 a and mesa 72 .
- polymeric material 34 of field 86 a may fill the desired volume between field 86 a of intermediate substrate 84 and mesa 72 of master template 62 and polymeric material 34 of regions 88 may fill the desired volume between regions 88 of substrate and alignment forming areas 78 of master template 62 .
- polymeric material 34 positioned on field 86 a and regions 88 of intermediate substrate 84 may be solidified and/or cross-linked and mesa 72 of master template 62 may be separated from polymeric material 34 positioned on field 86 a , defining a patterned layer 90 a , and may be separated from polymeric material 34 positioned on regions 88 , defining substrate alignment marks 92 .
- intermediate substrate 84 having a thickness substantially less than a thickness of master template 62 , a separation force may be minimized, which may be desirable.
- each of substrate alignment marks 92 may further comprise image placement metrology marks 94 .
- Image placement metrology marks 94 may be measured known image placement or image registration systems, e.g., LMS IPRO available from Leica Microsystems of Bannockburn, Ill.
- polymeric material 34 may be positioned on field 86 b in any of the methods mentioned above with respect to FIG. 6 and step 102 .
- a desired spatial relationship may be obtained between template alignment marks 80 of master template 62 and substrate alignment marks 92 of intermediate substrate 84 such that a desired spatial relationship between master template 62 and intermediate substrate 84 may be obtained, and more specifically, in the present example, between field 86 b and mesa 72 .
- a desired spatial relationship between template alignment marks 80 and substrate alignment marks 92 may include template alignment marks 80 and substrate alignment marks 92 being in superimposition; however, in a further embodiment, template alignment marks 80 and substrate alignment marks 92 may be offset in the x-y plane a desired amount to compensate for variations among the first, second, third, and fourth patterns 82 a , 82 b , 82 c , and 82 d of alignment forming areas 78 and template alignment marks 80 .
- Alignment between template alignment marks 80 and substrate alignment marks 92 may be determined employing an alignment system as described in U.S. Pat. No. 7,292,326 entitled “Interferometric Analysis for the Manufacture of Nano-Scale Devices,” which is incorporated herein by reference. Further at step 110 , polymeric material 34 of field 86 b may fill the desired volume between field 86 b of intermediate substrate 84 and mesa 72 of master template 62 .
- polymeric material 34 positioned on field 86 b of intermediate substrate 84 may be solidified and/or cross-linked and mesa 72 of master template 62 may be separated from polymeric material 34 positioned on intermediate substrate 84 , defining a patterned layer 90 b on field 86 b.
- polymeric material 34 may be positioned on field 86 c in any of the methods mentioned above with respect to FIG. 6 and step 102 .
- a desired spatial relationship may be obtained between template alignment marks 80 of master template 62 and substrate alignment marks 92 of intermediate substrate 84 such that a desired spatial relationship between master template 62 and intermediate substrate 84 may be obtained, and more specifically, in the present example, between field 86 c and mesa 72 .
- master template 62 may be rotated about the z-axis, and more specifically, rotated 180° with respect to intermediate substrate 84 .
- a desired spatial relationship may be obtained between template alignment marks 80 and substrate alignment marks 92 .
- polymeric material 34 of field 86 c may fill the desired volume between field 86 c of intermediate substrate 84 and mesa 72 of master template 62 .
- master template 62 may be rotated prior to positioning polymeric material 34 on fields 86 c of intermediate substrate 84 .
- polymeric material 34 positioned on field 86 c of intermediate substrate 84 may be solidified and/or cross-linked and mesa 72 of master template 62 may be separated from polymeric material 34 positioned on field 86 a , defining a patterned layer 90 c.
- steps 108 , 110 , and 112 may be repeated for field 86 d of intermediate substrate 84 , defining patterned layer 90 d on field 86 d .
- steps 108 , 110 , and 112 may be repeated for any number of fields 86 of intermediate substrate 84 .
- intermediate substrate 84 may be employed to form a pattern in a final substrate 96 .
- polymeric material 34 may be positioned on final substrate 96 employing any of the methods mentioned above with respect to step 102 and FIG. 6 .
- Final substrate 96 may comprise a plurality of fields 98 , shown as fields 98 a - 98 d .
- final substrate 96 may comprises any number of fields 98 , i.e.
- the number of fields 98 of final substrate 96 may be substantially the same as the number of fields 86 of intermediate substrate 84 .
- polymeric material 34 may be positioned on fields 98 of final substrate 96 .
- final substrate 96 may have a thickness of equal to or greater than 4 mm.
- a desired spatial relationship may be obtained between intermediate substrate 84 and final substrate 96 such that polymeric material 34 on final substrate 96 may fill the desired volume between intermediate substrate 84 and final substrate 96 .
- polymeric material 34 positioned on final substrate 96 may be solidified and/or cross-linked and intermediate substrate 84 may be separated from polymeric material 34 positioned on final substrate 96 , defining a plurality of patterned layers 99 in each of fields 98 , with each of patterned layers 99 being substantially the same as dies 60 of mold 20 , and thus, final substrate 96 may be substantially the same as template 18 .
- each of patterned layer 90 positioned on fields 86 of intermediate substrate 84 may be substantially the same as dies 60 of mold 20 and thus, intermediate substrate 84 may be substantially the same as template 18 .
- master template 62 may have a thickness of approximately 2.29 mm and intermediate substrate 84 may have a thickness of 6.35 mm.
- substrate alignment marks 92 may be formed on intermediate substrate 84 in a separate step. More specifically, substrate alignment marks 92 may be formed on intermediate substrate 84 prior to forming patterned layer 90 on intermediate substrate 84 . To that end, substrate alignment marks 92 may be formed employing a) an optical lithography tool with accurate global inteferometry, such as a 913 nm scanner lithography tool available from ASML of the Netherlands or b) an optical lithography tool with excel interferometry, such as the Nanoruler described at http://www.sciencedaily.com/releases/2004/02/040203233840.htm, which is incorporated herein by reference. As a result, alignment between fields 86 of intermediate substrate 84 may be obtained, i.e., field to field alignment.
- mold 20 may have four dies associated therewith. However, as mentioned above, mold 20 may have any number of dies associated therewith, and thus, master template 62 , intermediate substrate 84 , and final substrate 96 may scale according. As shown in FIG. 12 , master template 62 may have nine sections 64 associated therewith. To that end, each of sections 64 of master template 62 may have a pattern of alignment forming areas 78 and template alignment marks 80 proximate thereto, and more specifically, each section of sections 64 may have a pattern of alignment forming areas 78 and template alignment marks 80 differing from a pattern of alignment forming areas 78 and template alignment marks 80 of surrounding sections of sections 64 .
- sections 64 a , 64 c , 64 e , 64 g , and 64 i may have a fifth pattern of alignment forming areas 78 and template alignment marks 80 proximate thereto and sections 64 b , 64 d , 64 f , and 64 h may have a sixth pattern of alignment forming areas 78 and template alignment marks 80 proximate thereto, with the fifth pattern of alignment forming areas 78 and template alignment marks 80 being substantially the same as the first pattern mentioned above with respect to FIG. 5 , and the sixth pattern of alignment forming areas 78 and template alignment marks 80 being substantially the same as the third pattern mentioned above with respect to FIG. 5 .
- each of sections 64 e , 64 g , and 64 i may be patterned in the above-mentioned method analogous to patterning of section 64 c and each of sections 64 f and 64 h may be patterned in the above-mentioned method analogous to patterning of sections 64 b and 64 d.
- master template 62 , intermediate substrate 84 , and final substrate 96 may be substantially flat. More specifically, master template 62 , intermediate substrate 84 , and final substrate 96 may have a flatness better than 100 nm, preferably better than 50 nm, preferably better than 20 nm and further preferably better than 10 nm over the patterning area. To further minimize the aforementioned mechanical distortions, inter alia, minimize image placement errors, intermediate substrate 84 may conform to master template 62 .
- master template 62 , intermediate substrate 84 , and final substrate 96 may be positioned upon a chuck analogous to substrate chuck 14 mentioned above with respect to FIG. 1 .
- a shape of master template 62 , intermediate substrate 84 , and final substrate 96 may be determined employing an air gauge system (not shown) coupled with an XY stage (not shown); a laser distance sensor system (not shown) coupled with an XY stage (not shown); or a full field 3D profiler (not shown) as described in http://www.zygo.com/?/products/metrology.htm, which is incorporated by reference herein.
- each of master template 62 , intermediate substrate 84 , and final substrate 96 may be formed from substantially the same material, with the material including but not limited to, fused-silica and ultra-low-expansion glass. Further, a difference in temperature between master template 62 , intermediate substrate 84 , and final substrate 96 may be less than 0.05° C., preferably less than 0.01° C., and further preferably less than 0.001° C.
- master template 62 may have an actuation system coupled thereto analogous to actuation system 58 mentioned above with respect to FIG. 1 .
- final substrate 96 may have an actuation system coupled thereto analogous to actuation system 58 mentioned above with respect to FIG. 1 .
- Photomasks are typically 4 ⁇ (the relief pattern of the photomask is 5 times the size of the desired features to be formed on the substrate).
- Advanced photomask that may be employed in photolithography with KrF (248 nm) laser and ArF (193 nm) laser may further comprise sub-resolution features that are smaller than the primary features. These sub-resolution features may be also known as optical proximity correction features or reticle enhanced features. The sub-resolution features do not print; they are designed to enhance the quality of the primary features. As mentioned above, the primary features are 4 ⁇ .
- the primary photomask feature is 200 nm.
- the sub-resolution features may be as small as 1 ⁇ or smaller or as large as approaching 4 ⁇ . Typically the small sub-resolution features are about 1.5 ⁇ ; for 50 nm wafer features, this translates to 75 nm on the photomask.
- the 4 ⁇ photomasks are for example are of size 100 mm by 100 mm for a 25 mm by 35 mm wafer field size; and 104 mm by 132 mm for a 26 mm by 33 mm wafer field size. These fields typically have 2, 4, 6, or more dies in them each of which have substantially the same pattern requirements.
- the above-mentioned method may be analogously employed in formation of photomasks for photolithography.
Abstract
Imprint lithography templates for patterning substrates are described. The templates include a section having a mold a first pattern of alignment forming areas and template alignment marks. The additional sections are generally devoid of a mold. One or more of the additional section may include the first pattern of a second pattern of alignment forming areas and template alignment marks. The second pattern may correspond to the first pattern.
Description
- The present application is a continuation of U.S. patent application Ser. No. 11/695,850 filed Apr. 3, 2007, which claims priority to U.S. provisional application No. 60/788,806 filed on Apr. 3, 2006, both of which are incorporated herein by reference.
- Nano-fabrication involves the fabrication of very small structures, e.g., having features on the order of nanometers or smaller. One area in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits. As the semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed. Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like.
- An exemplary nano-fabrication technique is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as U.S. patent application publication no. 2004/0065976 filed as U.S. patent application Ser. No. 10/264,960; U.S. patent application publication no. 2004/0065252 filed as U.S. patent application Ser. No. 10/264,926; and U.S. Pat. No. 6,936,194, entitled “Functional Patterning Material for Imprint Lithography Processes,” all of which are assigned to the assignee of the present invention.
- The imprint lithography technique disclosed in each of the aforementioned U.S. patent application publications and U.S. patent includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate may be positioned upon a stage to obtain a desired position to facilitate patterning thereof. To that end, a mold is employed spaced-apart from the substrate with a formable liquid present between the mold and the substrate. The liquid is solidified to form a patterned layer that has a pattern recorded therein that is conforming to a shape of the surface of the mold in contact with the liquid. The mold is then separated from the patterned layer such that the mold and the substrate are spaced-apart. The substrate and the patterned layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the patterned layer.
-
FIG. 1 is a simplified side view of a lithographic system having a template spaced-apart from a substrate; -
FIG. 2 is a simplified side view of the substrate shown inFIG. 1 , having a patterned layer positioned thereon; -
FIG. 3 is a top down view of the template shown inFIG. 1 ; -
FIG. 4 is a flow chart of a method of forming the template shown inFIG. 1 ; -
FIG. 5 is a top down view of a master template formed from e-beam lithography, the master template employed to form template shown inFIG. 1 ; -
FIG. 6 is a top down view of an intermediate substrate formed from the master template shown inFIG. 1 ; the intermediate substrate having a first field formed and a plurality of substrate alignment marks; -
FIG. 7 is a top down view of the substrate alignment marks shown inFIG. 6 ; -
FIG. 8 is a top down view of the master template, shown inFIG. 1 , in superimposition with a portion of the intermediate substrate, shown inFIG. 6 , with a mesa of the master template being in superimposition with a second field of the intermediate substrate; -
FIG. 9 is a top down view of the master template, shown inFIG. 1 , in superimposition with a portion of the intermediate substrate, shown inFIG. 6 , with a mesa of the master template being in superimposition with a third field of the intermediate substrate; -
FIG. 10 is a top down view of the master template, shown inFIG. 1 , in superimposition with a portion of the intermediate substrate, shown inFIG. 6 , with a mesa of the master template being in superimposition with a fourth field of the intermediate substrate; -
FIG. 11 is a top down view of the intermediate substrate, shown inFIG. 6 , with a plurality of alignment marks being formed thereon prior to patterning the intermediate substrate; and -
FIG. 12 is a top down view of the master template, the master template having 9 fields associated therewith. - Referring to
FIG. 1 , asystem 10 to form a relief pattern on asubstrate 12 is shown.Substrate 12 may be coupled to asubstrate chuck 14.Substrate chuck 14 may be any chuck including, but not limited to, vacuum, pin-type, groove-type, or electromagnetic, as described in U.S. Pat. No. 6,873,087 entitled “High-Precision Orientation Alignment and Gap Control Stages for Imprint Lithography Processes,” which is incorporated herein by reference. In a further embodiment,substrate chuck 14 may be a chuck as described in U.S. Pat. No. 6,982,783 entitled “Chucking System for Modulating Shapes of Substrates” and U.S. Pat. No. 6,980,282 entitled “Method for Modulating Shapes of Substrates”, both of which are incorporated herein by reference.Substrate 12 andsubstrate chuck 14 may be supported upon astage 16. Further,stage 16,substrate 12, andsubstrate chuck 14 may be positioned on a base (not shown).Stage 16 may provide motion along the x and y axes. - Spaced-apart from
substrate 12 is atemplate 18 having amold 20 extending therefrom towardssubstrate 20 with apatterning surface 22 thereon. Further,mesa 20 may be referred to as amold 20.Mesa 20 may also be referred to as ananoimprint mold 20. In a further embodiment,template 18 may be substantially absent ofmold 20.Template 18 and/ormold 20 may be formed from such materials including but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, and hardened sapphire. As shown,patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 andprotrusions 26. However, in a further embodiment, patterningsurface 22 may be substantially smooth and/or planar.Patterning surface 20 may define an original pattern that forms the basis of a pattern to be formed onsubstrate 12. -
Template 18 may be coupled to atemplate chuck 28,template chuck 28 being any chuck including, but not limited to, vacuum, pin-type, groove-type, or electromagnetic, as described in U.S. Pat. No. 6,873,087. In a further embodiment,substrate chuck 14 may be a chuck as described in U.S. Pat. No. 6,982,783 and U.S. Pat. No. 6,980,282.Template chuck 28 may be coupled to animprint head 30 to facilitate movement oftemplate 18 andmold 20. -
System 10 further comprises afluid dispense system 32.Fluid dispense system 32 may be in fluid communication withsubstrate 12 so as to deposit apolymeric material 34 thereon.System 10 may comprise any number of fluid dispensers andfluid dispense system 32 may comprise a plurality of dispensing units therein.Polymeric material 34 may be positioned uponsubstrate 12 using any known technique, e.g., drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and the like. As shown,polymeric material 34 may be deposited uponsubstrate 12 as a plurality of spaced-apart droplets 36. Typically,polymeric material 34 is disposed uponsubstrate 12 before the desired volume is defined betweenmold 20 andsubstrate 12. However,polymeric material 34 may fill the volume after the desired volume has been obtained. - Referring to
FIGS. 1 and 2 ,system 10 further comprises asource 38 ofenergy 40 coupled todirect energy 40 along apath 42.Imprint head 30 andstage 16 are configured to arrangemold 20 andsubstrate 12, respectively, to be in superimposition and disposed inpath 42. Eitherimprint head 30,stage 16, or both vary a distance betweenmold 20 andsubstrate 12 to define a desired volume therebetween such thatmold 20 contactspolymeric material 34 and the desired volume is filled bypolymeric material 34. More specifically,polymeric material 34 of droplets 36 may ingress and fill recesses 24 ofmold 20. After the desired volume is filled withpolymeric material 34,source 38 producesenergy 40, e.g., broadband ultraviolet radiation that causespolymeric material 34 to solidify and/or cross-link conforming to the shape of asurface 44 ofsubstrate 12 andpatterning surface 22, defining apatterned layer 46 onsubstrate 12.Patterned layer 46 may comprise aresidual layer 48 and a plurality of features shown asprotrusions 50 andrecessions 52. -
System 10 may further comprise anactuation system 58 surroundingtemplate 18/mold 20 to facilitate alignment and overlay registration betweenmold 20 andsubstrate 12.Actuation system 58 facilitates alignment and overlay registration by selectively deformingtemplate 18/mold 20. This facilitates correcting various parameters of the pattern shape, i.e., magnification characteristics, skew/orthogonality characteristics, and trapezoidal characteristics. An example of anactuation system 58 is described in U.S. Pat. No. 7,150,622 entitled “Systems for Magnification and Distortion Correction for Imprint Lithography Processes”; U.S. Pat. No. 7,170,589 entitled “Apparatus to Vary Dimensions of a Substrate During Nano-Scale Manufacturing”; and U.S. Pat. No. 6,916,585 entitled “Method of Varying Template Dimensions to Achieve Alignment During Imprint Lithography”; all of which are incorporated by reference herein. -
System 10 may be regulated by aprocessor 54 that is in data communication withstage 16,imprint head 30, fluid dispensesystem 32,source 38, andactuation system 58 operating on a computer readable program stored inmemory 56. - Referring to
FIG. 3 , a top down view oftemplate 18 is shown. More specifically,mold 20 oftemplate 18 is shown comprising a plurality of dies 60, shown as dies 60 a-60 d. However, in a further embodiment,mold 20 may comprise any number of dies, i.e., 2, 4, 6, 8, or 9 dies. Furthermore, each of dies 60 a-60 d may have substantially thesame relief structure 61 formed therein. To that end, formation of dies 60 ofmold 20 may be formed employing e-beam lithography. However, employing e-beam lithography may result in, inter alia, increased formation time oftemplate 18, which may be undesirable. To that end, a method of minimizing formation time of dies 60 ofmold 20 is described below. - Referring to
FIGS. 3-5 , in a first embodiment, a method of forming dies 60 ofmold 20 is shown. More specifically atstep 100, amaster template 62 may be formed employing e-beam lithography.Master template 62 comprises a plurality of sections 64, shown as sections 64 a-64 d. However, in a further embodiment,master template 62 may comprise any number of sections 64, i.e., 2, 4, 6, 8, or 9 sections. Each section of sections 64 may be separated from an adjacent section of sections 64 by astreet 66. Further, each of sections 64 may be separated from aperimeter 68 ofmaster template 62 by astreet 70. - A section of sections 64 may comprises a
mesa 72 having a relief pattern 74 defined therein. As shown,mesa 72 may be positioned insection 64 a, however, in a further embodiment,mesa 72 may be positioned in any section of sections 64.Mesa 72 comprisessides side 76 a being positioned opposite toside 76 c andside 76 b being positioned opposite toside 76 d. In an example,master template 62 may have a thickness of equal to or greater than 4 mm. -
Master template 62 may further comprise a plurality ofalignment forming areas 78 and template alignment marks 80.Alignment forming areas 78 and template alignment marks 80 may be positioned withinstreets alignment forming areas 78 and template alignment marks 80 may be positioned on a plurality of mesas. In still a further embodiment,alignment forming areas 78 may comprise checkerboard forming alignment marks and template alignment marks 80 may comprise grating alignment marks. In still a further embodiment, template alignment marks 80 may be substantially planar. - Positioned
adjacent mesa 72 are a first subset ofalignment forming areas 78 and template alignment marks 80 defining afirst pattern 82 a. As shown, positioned proximate each ofsides alignment forming areas 78 and two template alignment marks 80. However, in a further embodiment, any number ofalignment forming areas 78 and template alignment marks 80 may be positionedproximate sides -
Master template 62 may further comprisealignment forming areas 78 and template alignment marks 80 positioned instreets master template 62. More specifically, a second, third, and fourth subsets ofalignment forming areas 78 and template alignment marks 80 may be positioned instreets sections second pattern 82 b, athird pattern 82 c, and afourth pattern 82 d, respectively. Thefirst pattern 82 a may be substantially the same as thethird pattern 82 c and thesecond pattern 82 b may be substantially the same as thefourth pattern 82 d. Further, the first andthird patterns fourth patterns - Referring to
FIGS. 4-6 , atstep 102,polymeric material 34 may be positioned on aintermediate substrate 84 by drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and the like. More specifically,intermediate substrate 84 may comprise a plurality of fields 86, shown as fields 86 a-86 d. However, in a further embodiment,intermediate substrate 84 may comprises any number of fields 86, i.e. 2, 4, 6, 8, or 9 fields. In the present example, the number of fields 86 ofintermediate substrate 84 may be substantially the same as the number of sections 64 ofmater template 62. To that end,polymeric material 34 may be positioned on field 586 a. Furthermore,polymeric material 34 may be positioned on a plurality ofregions 88, with regions laying 88 outside of fields 86 a-86 d. In an example,intermediate substrate 84 may have a thickness of in a range of 0.05 mm to 3 mm. - At
step 104, a desired spatial relationship may be obtained betweenmaster template 62 andintermediate substrate 84, and more specifically, betweenfield 86 a andmesa 72. Further atstep 104,polymeric material 34 offield 86 a may fill the desired volume betweenfield 86 a ofintermediate substrate 84 andmesa 72 ofmaster template 62 andpolymeric material 34 ofregions 88 may fill the desired volume betweenregions 88 of substrate andalignment forming areas 78 ofmaster template 62. - At
step 106,polymeric material 34 positioned onfield 86 a andregions 88 ofintermediate substrate 84 may be solidified and/or cross-linked andmesa 72 ofmaster template 62 may be separated frompolymeric material 34 positioned onfield 86 a, defining a patterned layer 90 a, and may be separated frompolymeric material 34 positioned onregions 88, defining substrate alignment marks 92. As a result ofintermediate substrate 84 having a thickness substantially less than a thickness ofmaster template 62, a separation force may be minimized, which may be desirable. - Referring to
FIG. 7 , in a further embodiment, each of substrate alignment marks 92 may further comprise image placement metrology marks 94. Image placement metrology marks 94 may be measured known image placement or image registration systems, e.g., LMS IPRO available from Leica Microsystems of Bannockburn, Ill. - Referring to
FIGS. 4 , 5, and 8, atstep 108,polymeric material 34 may be positioned onfield 86 b in any of the methods mentioned above with respect toFIG. 6 and step 102. - At
step 110, a desired spatial relationship may be obtained between template alignment marks 80 ofmaster template 62 and substrate alignment marks 92 ofintermediate substrate 84 such that a desired spatial relationship betweenmaster template 62 andintermediate substrate 84 may be obtained, and more specifically, in the present example, betweenfield 86 b andmesa 72. A desired spatial relationship between template alignment marks 80 and substrate alignment marks 92 may include template alignment marks 80 and substrate alignment marks 92 being in superimposition; however, in a further embodiment, template alignment marks 80 and substrate alignment marks 92 may be offset in the x-y plane a desired amount to compensate for variations among the first, second, third, andfourth patterns alignment forming areas 78 and template alignment marks 80. - Alignment between template alignment marks 80 and substrate alignment marks 92 may be determined employing an alignment system as described in U.S. Pat. No. 7,292,326 entitled “Interferometric Analysis for the Manufacture of Nano-Scale Devices,” which is incorporated herein by reference. Further at
step 110,polymeric material 34 offield 86 b may fill the desired volume betweenfield 86 b ofintermediate substrate 84 andmesa 72 ofmaster template 62. - At
step 112,polymeric material 34 positioned onfield 86 b ofintermediate substrate 84 may be solidified and/or cross-linked andmesa 72 ofmaster template 62 may be separated frompolymeric material 34 positioned onintermediate substrate 84, defining a patterned layer 90 b onfield 86 b. - Referring to
FIGS. 4 , 5, and 9, atstep 114,polymeric material 34 may be positioned onfield 86 c in any of the methods mentioned above with respect toFIG. 6 and step 102. - At
step 116, a desired spatial relationship may be obtained between template alignment marks 80 ofmaster template 62 and substrate alignment marks 92 ofintermediate substrate 84 such that a desired spatial relationship betweenmaster template 62 andintermediate substrate 84 may be obtained, and more specifically, in the present example, betweenfield 86 c andmesa 72. To that end, to obtain a desired spatial relationship between template alignment marks 80 ofmaster template 62 and substrate alignment marks 92,master template 62 may be rotated about the z-axis, and more specifically, rotated 180° with respect tointermediate substrate 84. As a result, a desired spatial relationship may be obtained between template alignment marks 80 and substrate alignment marks 92. Further atstep 116,polymeric material 34 offield 86 c may fill the desired volume betweenfield 86 c ofintermediate substrate 84 andmesa 72 ofmaster template 62. In a further embodiment,master template 62 may be rotated prior to positioningpolymeric material 34 onfields 86 c ofintermediate substrate 84. - At
step 118,polymeric material 34 positioned onfield 86 c ofintermediate substrate 84 may be solidified and/or cross-linked andmesa 72 ofmaster template 62 may be separated frompolymeric material 34 positioned onfield 86 a, defining apatterned layer 90 c. - Referring to
FIGS. 4 and 5 , atstep 120,steps field 86 d ofintermediate substrate 84, defining patternedlayer 90 d onfield 86 d. In a further embodiment, steps 108, 110, and 112 may be repeated for any number of fields 86 ofintermediate substrate 84. - Referring to
FIGS. 4 , 5, and 10, after formingpatterned layers fields intermediate substrate 84 may be employed to form a pattern in afinal substrate 96. More specifically, atstep 122,polymeric material 34 may be positioned onfinal substrate 96 employing any of the methods mentioned above with respect to step 102 andFIG. 6 .Final substrate 96 may comprise a plurality offields 98, shown asfields 98 a-98 d. However, in a further embodiment,final substrate 96 may comprises any number offields 98, i.e. 2, 4, 6, 8, or 9 fields. In the present embodiment, the number offields 98 offinal substrate 96 may be substantially the same as the number of fields 86 ofintermediate substrate 84. To that end,polymeric material 34 may be positioned onfields 98 offinal substrate 96. In an example,final substrate 96 may have a thickness of equal to or greater than 4 mm. - At
step 124, a desired spatial relationship may be obtained betweenintermediate substrate 84 andfinal substrate 96 such thatpolymeric material 34 onfinal substrate 96 may fill the desired volume betweenintermediate substrate 84 andfinal substrate 96. - At
step 126,polymeric material 34 positioned onfinal substrate 96 may be solidified and/or cross-linked andintermediate substrate 84 may be separated frompolymeric material 34 positioned onfinal substrate 96, defining a plurality of patternedlayers 99 in each offields 98, with each of patternedlayers 99 being substantially the same as dies 60 ofmold 20, and thus,final substrate 96 may be substantially the same astemplate 18. - Referring to
FIGS. 4-6 , in a second embodiment, it may be desired to formtemplate 18 frommaster template 62 in a single patterning step. To that end, each of patterned layer 90 positioned on fields 86 ofintermediate substrate 84 may be substantially the same as dies 60 ofmold 20 and thus,intermediate substrate 84 may be substantially the same astemplate 18. In the present example,master template 62 may have a thickness of approximately 2.29 mm andintermediate substrate 84 may have a thickness of 6.35 mm. - Referring to
FIG. 11 , in still a further embodiment, substrate alignment marks 92 may be formed onintermediate substrate 84 in a separate step. More specifically, substrate alignment marks 92 may be formed onintermediate substrate 84 prior to forming patterned layer 90 onintermediate substrate 84. To that end, substrate alignment marks 92 may be formed employing a) an optical lithography tool with accurate global inteferometry, such as a 913 nm scanner lithography tool available from ASML of the Netherlands or b) an optical lithography tool with excel interferometry, such as the Nanoruler described at http://www.sciencedaily.com/releases/2004/02/040203233840.htm, which is incorporated herein by reference. As a result, alignment between fields 86 ofintermediate substrate 84 may be obtained, i.e., field to field alignment. - Referring to
FIGS. 3 , 5, and 6, to that end, as described above,mold 20 may have four dies associated therewith. However, as mentioned above,mold 20 may have any number of dies associated therewith, and thus,master template 62,intermediate substrate 84, andfinal substrate 96 may scale according. As shown inFIG. 12 ,master template 62 may have nine sections 64 associated therewith. To that end, each of sections 64 ofmaster template 62 may have a pattern ofalignment forming areas 78 and template alignment marks 80 proximate thereto, and more specifically, each section of sections 64 may have a pattern ofalignment forming areas 78 and template alignment marks 80 differing from a pattern ofalignment forming areas 78 and template alignment marks 80 of surrounding sections of sections 64. More specifically,sections alignment forming areas 78 and template alignment marks 80 proximate thereto andsections alignment forming areas 78 and template alignment marks 80 proximate thereto, with the fifth pattern ofalignment forming areas 78 and template alignment marks 80 being substantially the same as the first pattern mentioned above with respect toFIG. 5 , and the sixth pattern ofalignment forming areas 78 and template alignment marks 80 being substantially the same as the third pattern mentioned above with respect toFIG. 5 . Further, each ofsections section 64 c and each ofsections sections - Furthermore, it may be desired to minimize mechanical distortions present in
template 18 formed in any of the methods mentioned above. To that end,master template 62,intermediate substrate 84, andfinal substrate 96 may be substantially flat. More specifically,master template 62,intermediate substrate 84, andfinal substrate 96 may have a flatness better than 100 nm, preferably better than 50 nm, preferably better than 20 nm and further preferably better than 10 nm over the patterning area. To further minimize the aforementioned mechanical distortions, inter alia, minimize image placement errors,intermediate substrate 84 may conform tomaster template 62. To that end,master template 62,intermediate substrate 84, andfinal substrate 96 may be positioned upon a chuck analogous tosubstrate chuck 14 mentioned above with respect toFIG. 1 . To that end, a shape ofmaster template 62,intermediate substrate 84, andfinal substrate 96 may be determined employing an air gauge system (not shown) coupled with an XY stage (not shown); a laser distance sensor system (not shown) coupled with an XY stage (not shown); or a full field 3D profiler (not shown) as described in http://www.zygo.com/?/products/metrology.htm, which is incorporated by reference herein. Moreover, each ofmaster template 62,intermediate substrate 84, andfinal substrate 96 may be formed from substantially the same material, with the material including but not limited to, fused-silica and ultra-low-expansion glass. Further, a difference in temperature betweenmaster template 62,intermediate substrate 84, andfinal substrate 96 may be less than 0.05° C., preferably less than 0.01° C., and further preferably less than 0.001° C. - To further minimize, if not prevent, errors present formed in any of the methods mentioned above, in the first embodiment mentioned above,
master template 62 may have an actuation system coupled thereto analogous toactuation system 58 mentioned above with respect toFIG. 1 . In the second embodiment mentioned above,final substrate 96 may have an actuation system coupled thereto analogous toactuation system 58 mentioned above with respect toFIG. 1 . - The above-mentioned methods may be analogously employed in formation of photomasks for photolithography. Photomasks are typically 4× (the relief pattern of the photomask is 5 times the size of the desired features to be formed on the substrate). Advanced photomask that may be employed in photolithography with KrF (248 nm) laser and ArF (193 nm) laser may further comprise sub-resolution features that are smaller than the primary features. These sub-resolution features may be also known as optical proximity correction features or reticle enhanced features. The sub-resolution features do not print; they are designed to enhance the quality of the primary features. As mentioned above, the primary features are 4×. For example, for a feature of the size of 50 nm on the wafer, the primary photomask feature is 200 nm. The sub-resolution features may be as small as 1× or smaller or as large as approaching 4×. Typically the small sub-resolution features are about 1.5×; for 50 nm wafer features, this translates to 75 nm on the photomask. The 4× photomasks are for example are of
size 100 mm by 100 mm for a 25 mm by 35 mm wafer field size; and 104 mm by 132 mm for a 26 mm by 33 mm wafer field size. These fields typically have 2, 4, 6, or more dies in them each of which have substantially the same pattern requirements. Thus, the above-mentioned method may be analogously employed in formation of photomasks for photolithography. - The embodiments of the present invention described above are exemplary. Many changes and modifications may be made to the disclosure recited above, while remaining within the scope of the invention. Therefore, the scope of the invention should not be limited by the above description, but instead should be determined with reference to the appended claims along with their full scope of equivalents.
Claims (14)
1. A nano imprint lithography template, comprising:
a plurality of sections including:
a first section having a mold and a first subset of alignment forming areas and a plurality of template alignment marks defining a first pattern; and
a second section having a second subset of alignment forming areas and a plurality of template alignment marks defining a second pattern;
wherein the first pattern corresponds to the second pattern.
2. The nano imprint lithography template of claim 1 , wherein the second section is devoid of a mold.
3. The nano imprint lithography template of claim 1 , wherein the alignment forming areas are checkerboard forming alignment marks and the template alignment marks are grating alignment marks.
4. The template of claim 1 , wherein the alignment forming areas are checkerboard forming alignment marks and the template alignment marks are substantially planar.
5. A nano imprint lithography template, comprising:
a first section having a first dimension of a length and a width, the first section having a mold with a relief pattern; and,
a second section having second dimensions of a length and a width, the second section devoid of a mold, wherein the first dimensions are substantially similar to the second dimensions.
6. The nano imprint lithography template of claim 5 , further comprising a first pattern of alignment forming areas and template alignment marks positioned adjacent to the first section.
7. The nano imprint lithography template of claim 6 , further comprising a second pattern of alignment forming areas and template alignment marks positioned adjacent to the second section, wherein the first pattern is different from the second pattern.
8. A nano imprint lithography template, comprising:
a plurality of sections, each section having substantially similar dimensions of length and width, with only one of the plurality of sections having a mold, the mold having a relief pattern defined therein.
9. The template of claim 8 , further comprising a plurality of alignment forming areas and template alignment marks.
10. The template of claim 9 , wherein each section is separated from each adjacent section by a street and each section is separated from the perimeter of the template by a street and the plurality of alignment forming areas and template alignment marks are positioned within the streets.
11. The template of claim 10 , wherein the alignment forming areas are checkerboard forming alignment marks and the template alignment marks are grating alignment marks.
12. The template of claim 10 , wherein the alignment forming areas are checkerboard forming alignment marks and the template alignment marks are substantially planar.
13. The template of claim 8 , further comprising a first subset of alignment forming areas and a first subset of template alignment marks defining a first pattern positioned adjacent to the mold.
14. The template of claim 13 , further comprising a second subset of alignment forming areas and a second subset of template alignment marks defining a second pattern, wherein the second pattern corresponds to the first pattern.
Priority Applications (1)
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US12/835,018 US20100278954A1 (en) | 2006-04-03 | 2010-07-13 | Method of Concurrently Patterning a Substrate Having a Plurality of Fields and a Plurality of Alignment Marks |
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US78880606P | 2006-04-03 | 2006-04-03 | |
US11/695,850 US7780893B2 (en) | 2006-04-03 | 2007-04-03 | Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks |
US12/835,018 US20100278954A1 (en) | 2006-04-03 | 2010-07-13 | Method of Concurrently Patterning a Substrate Having a Plurality of Fields and a Plurality of Alignment Marks |
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US11/695,850 Continuation US7780893B2 (en) | 2006-04-03 | 2007-04-03 | Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks |
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US20100278954A1 true US20100278954A1 (en) | 2010-11-04 |
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US11/695,850 Expired - Fee Related US7780893B2 (en) | 2006-04-03 | 2007-04-03 | Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks |
US12/835,018 Abandoned US20100278954A1 (en) | 2006-04-03 | 2010-07-13 | Method of Concurrently Patterning a Substrate Having a Plurality of Fields and a Plurality of Alignment Marks |
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US11/695,850 Expired - Fee Related US7780893B2 (en) | 2006-04-03 | 2007-04-03 | Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks |
Country Status (5)
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US (2) | US7780893B2 (en) |
JP (1) | JP5306989B2 (en) |
KR (1) | KR20090003153A (en) |
TW (1) | TW200801794A (en) |
WO (1) | WO2007117524A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102591142A (en) * | 2012-02-29 | 2012-07-18 | 青岛理工大学 | Nano imprinting device and method for imaging sapphire substrate |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7162035B1 (en) | 2000-05-24 | 2007-01-09 | Tracer Detection Technology Corp. | Authentication method and system |
US7179079B2 (en) * | 2002-07-08 | 2007-02-20 | Molecular Imprints, Inc. | Conforming template for patterning liquids disposed on substrates |
US7442336B2 (en) * | 2003-08-21 | 2008-10-28 | Molecular Imprints, Inc. | Capillary imprinting technique |
US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
US20060062922A1 (en) | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
US7630067B2 (en) * | 2004-11-30 | 2009-12-08 | Molecular Imprints, Inc. | Interferometric analysis method for the manufacture of nano-scale devices |
US20070231421A1 (en) | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | Enhanced Multi Channel Alignment |
US8999218B2 (en) * | 2005-06-06 | 2015-04-07 | Canon Kabushiki Kaisha | Process for producing member having pattern, pattern transfer apparatus, and mold |
US7906058B2 (en) | 2005-12-01 | 2011-03-15 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
US7670530B2 (en) | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
EP1957249B1 (en) | 2005-12-08 | 2014-11-12 | Canon Nanotechnologies, Inc. | Method and system for double-sided patterning of substrates |
US8850980B2 (en) * | 2006-04-03 | 2014-10-07 | Canon Nanotechnologies, Inc. | Tessellated patterns in imprint lithography |
US8142850B2 (en) * | 2006-04-03 | 2012-03-27 | Molecular Imprints, Inc. | Patterning a plurality of fields on a substrate to compensate for differing evaporation times |
US7802978B2 (en) * | 2006-04-03 | 2010-09-28 | Molecular Imprints, Inc. | Imprinting of partial fields at the edge of the wafer |
US8012395B2 (en) | 2006-04-18 | 2011-09-06 | Molecular Imprints, Inc. | Template having alignment marks formed of contrast material |
US8215946B2 (en) | 2006-05-18 | 2012-07-10 | Molecular Imprints, Inc. | Imprint lithography system and method |
TW200842934A (en) * | 2006-12-29 | 2008-11-01 | Molecular Imprints Inc | Imprint fluid control |
US20090014917A1 (en) * | 2007-07-10 | 2009-01-15 | Molecular Imprints, Inc. | Drop Pattern Generation for Imprint Lithography |
US7837907B2 (en) * | 2007-07-20 | 2010-11-23 | Molecular Imprints, Inc. | Alignment system and method for a substrate in a nano-imprint process |
US8119052B2 (en) * | 2007-11-02 | 2012-02-21 | Molecular Imprints, Inc. | Drop pattern generation for imprint lithography |
US20090148619A1 (en) * | 2007-12-05 | 2009-06-11 | Molecular Imprints, Inc. | Controlling Thickness of Residual Layer |
US20090147237A1 (en) * | 2007-12-05 | 2009-06-11 | Molecular Imprints, Inc. | Spatial Phase Feature Location |
US8012394B2 (en) * | 2007-12-28 | 2011-09-06 | Molecular Imprints, Inc. | Template pattern density doubling |
US8361371B2 (en) * | 2008-02-08 | 2013-01-29 | Molecular Imprints, Inc. | Extrusion reduction in imprint lithography |
US20090212012A1 (en) * | 2008-02-27 | 2009-08-27 | Molecular Imprints, Inc. | Critical dimension control during template formation |
US7995196B1 (en) | 2008-04-23 | 2011-08-09 | Tracer Detection Technology Corp. | Authentication method and system |
US9005848B2 (en) * | 2008-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
US20100022036A1 (en) * | 2008-07-25 | 2010-01-28 | Ikuo Yoneda | Method for forming pattern, and template |
JP2010080630A (en) * | 2008-09-25 | 2010-04-08 | Canon Inc | Stamping device and method of manufacturing article |
US20100078846A1 (en) * | 2008-09-30 | 2010-04-01 | Molecular Imprints, Inc. | Particle Mitigation for Imprint Lithography |
US20100092599A1 (en) * | 2008-10-10 | 2010-04-15 | Molecular Imprints, Inc. | Complementary Alignment Marks for Imprint Lithography |
US20100096764A1 (en) * | 2008-10-20 | 2010-04-22 | Molecular Imprints, Inc. | Gas Environment for Imprint Lithography |
US8512797B2 (en) * | 2008-10-21 | 2013-08-20 | Molecular Imprints, Inc. | Drop pattern generation with edge weighting |
US8586126B2 (en) | 2008-10-21 | 2013-11-19 | Molecular Imprints, Inc. | Robust optimization to generate drop patterns in imprint lithography which are tolerant of variations in drop volume and drop placement |
US8345242B2 (en) * | 2008-10-28 | 2013-01-01 | Molecular Imprints, Inc. | Optical system for use in stage control |
US20100112310A1 (en) * | 2008-10-30 | 2010-05-06 | Molecular Imprints, Inc. | Substrate Patterning |
US8432548B2 (en) * | 2008-11-04 | 2013-04-30 | Molecular Imprints, Inc. | Alignment for edge field nano-imprinting |
US8231821B2 (en) * | 2008-11-04 | 2012-07-31 | Molecular Imprints, Inc. | Substrate alignment |
US8529778B2 (en) * | 2008-11-13 | 2013-09-10 | Molecular Imprints, Inc. | Large area patterning of nano-sized shapes |
CN102438841A (en) * | 2009-03-23 | 2012-05-02 | 因特瓦克公司 | A process for optimization of island to trench ratio in patterned media |
CN101870151A (en) | 2009-04-27 | 2010-10-27 | 鸿富锦精密工业(深圳)有限公司 | Manufacturing method of optical element and impressing mould |
US9005849B2 (en) * | 2009-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
JP5809409B2 (en) * | 2009-12-17 | 2015-11-10 | キヤノン株式会社 | Imprint apparatus and pattern transfer method |
KR101772993B1 (en) * | 2010-02-05 | 2017-08-31 | 캐논 나노테크놀로지즈 인코퍼레이티드 | Templates having high contrast alignment marks |
JP5699461B2 (en) * | 2010-07-02 | 2015-04-08 | 住友電気工業株式会社 | Nanoimprint mold |
JP5759003B2 (en) | 2010-09-02 | 2015-08-05 | エーファウ・グループ・ゲーエムベーハー | Stamping tool, device and method for manufacturing lens wafers |
KR101861644B1 (en) | 2010-09-24 | 2018-05-28 | 캐논 나노테크놀로지즈 인코퍼레이티드 | High contrast alignment marks through multiple stage imprinting |
CN103189172B (en) | 2010-10-26 | 2015-07-29 | Ev集团有限责任公司 | For the manufacture of the method and apparatus of lens wafers |
EP2635419B1 (en) | 2010-11-05 | 2020-06-17 | Molecular Imprints, Inc. | Patterning of non-convex shaped nanostructures |
JP5709558B2 (en) * | 2011-02-01 | 2015-04-30 | キヤノン株式会社 | Inspection method, imprint apparatus, and article manufacturing method |
JP6306501B2 (en) | 2011-04-25 | 2018-04-04 | キヤノン ナノテクノロジーズ,インコーポレーテッド | Template and method for aligning a template with a substrate |
TWI455833B (en) * | 2012-02-29 | 2014-10-11 | Microjet Technology Co Ltd | 3d image printing apparatus and 3d printing correction method thereof |
JP6071221B2 (en) | 2012-03-14 | 2017-02-01 | キヤノン株式会社 | Imprint apparatus, mold, imprint method, and article manufacturing method |
JP5723337B2 (en) * | 2012-09-07 | 2015-05-27 | 株式会社東芝 | Pattern forming method and pattern forming apparatus |
CN105358979A (en) * | 2013-03-15 | 2016-02-24 | 普林斯顿大学理事会 | Analyte detection enhancement by targeted immobilization, surface amplification, and pixelated reading and analysis |
US9646896B2 (en) * | 2013-07-12 | 2017-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithographic overlay sampling |
JP2015146412A (en) * | 2014-02-04 | 2015-08-13 | 株式会社東芝 | Template for imprint and manufacturing method therefor |
KR102154561B1 (en) * | 2014-04-01 | 2020-09-10 | 다이니폰 인사츠 가부시키가이샤 | Imprinting mold and imprinting method |
JP6361303B2 (en) * | 2014-06-13 | 2018-07-25 | 大日本印刷株式会社 | Imprint mold and imprint apparatus |
JP5874782B2 (en) * | 2014-06-30 | 2016-03-02 | 信越化学工業株式会社 | Mold substrate and mold substrate inspection method |
JP6385177B2 (en) * | 2014-07-16 | 2018-09-05 | キヤノン株式会社 | Mold, imprint apparatus, and article manufacturing method |
JP5900589B2 (en) * | 2014-12-12 | 2016-04-06 | 大日本印刷株式会社 | Imprint mold, alignment method, imprint method, and imprint apparatus |
JP2016134441A (en) * | 2015-01-16 | 2016-07-25 | キヤノン株式会社 | Imprint device, imprint method, and manufacturing method of article |
US10191368B2 (en) * | 2015-11-05 | 2019-01-29 | Board Of Regents, The University Of Texas System | Multi-field overlay control in jet and flash imprint lithography |
US9975364B2 (en) * | 2016-07-12 | 2018-05-22 | Hewlett-Packard Development Company, L.P. | Determining deformations of slices of an image |
US10650111B2 (en) | 2017-11-30 | 2020-05-12 | International Business Machines Corporation | Electrical mask validation |
US10429743B2 (en) | 2017-11-30 | 2019-10-01 | International Business Machines Corporation | Optical mask validation |
JP7089375B2 (en) * | 2018-02-19 | 2022-06-22 | キヤノン株式会社 | Flattening device |
JP6540848B2 (en) * | 2018-03-16 | 2019-07-10 | 大日本印刷株式会社 | Template for nanoimprint |
CN110416103B (en) * | 2018-04-28 | 2021-09-28 | 上海微电子装备(集团)股份有限公司 | Residual gum standard tablet and preparation method thereof |
CN110687759B (en) * | 2018-07-06 | 2021-04-02 | 上海微电子装备(集团)股份有限公司 | Mask plate and bonding alignment method |
JP2020035924A (en) * | 2018-08-30 | 2020-03-05 | キオクシア株式会社 | Original plate |
KR20200026407A (en) * | 2018-08-31 | 2020-03-11 | 삼성디스플레이 주식회사 | Master stamp for nano imprint and method of manufacturing of the smae |
JP7361538B2 (en) | 2018-09-10 | 2023-10-16 | キヤノン株式会社 | Imprint method and article manufacturing method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6344698B2 (en) * | 1999-02-22 | 2002-02-05 | International Business Machines Corporation | More robust alignment mark design |
US6780001B2 (en) * | 1999-07-30 | 2004-08-24 | Formfactor, Inc. | Forming tool for forming a contoured microelectronic spring mold |
US20050067379A1 (en) * | 2003-09-25 | 2005-03-31 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
Family Cites Families (285)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1183056A (en) | 1966-11-29 | 1970-03-04 | Bp Chemicals U K Ltd Formerly | Metering Process for Dispensing Measured Quantities of Liquefied Gas |
US3783520A (en) | 1970-09-28 | 1974-01-08 | Bell Telephone Labor Inc | High accuracy alignment procedure utilizing moire patterns |
US4022855A (en) | 1975-03-17 | 1977-05-10 | Eastman Kodak Company | Method for making a plastic optical element having a gradient index of refraction |
FR2325018A1 (en) | 1975-06-23 | 1977-04-15 | Ibm | INTERVAL MEASURING DEVICE FOR DEFINING THE DISTANCE BETWEEN TWO OR MORE FACES |
US4208240A (en) | 1979-01-26 | 1980-06-17 | Gould Inc. | Method and apparatus for controlling plasma etching |
US4326805A (en) | 1980-04-11 | 1982-04-27 | Bell Telephone Laboratories, Incorporated | Method and apparatus for aligning mask and wafer members |
DE3022709A1 (en) | 1980-06-18 | 1982-01-07 | Felix Schoeller jr. GmbH & Co KG, 4500 Osnabrück | WATERPROOF PHOTOGRAPHIC PAPER AND METHOD FOR THE PRODUCTION THEREOF |
US4576900A (en) | 1981-10-09 | 1986-03-18 | Amdahl Corporation | Integrated circuit multilevel interconnect system and method |
DE3208081A1 (en) | 1982-03-06 | 1983-09-08 | Braun Ag, 6000 Frankfurt | METHOD FOR PRODUCING A SHEET-LIKE SHEAR FILM FOR AN ELECTRICALLY OPERATED DRY SHAVER WITH Raises On Its Face Facing The Skin |
US4440804A (en) | 1982-08-02 | 1984-04-03 | Fairchild Camera & Instrument Corporation | Lift-off process for fabricating self-aligned contacts |
US4490409A (en) | 1982-09-07 | 1984-12-25 | Energy Sciences, Inc. | Process and apparatus for decorating the surfaces of electron irradiation cured coatings on radiation-sensitive substrates |
FR2538923A1 (en) | 1982-12-30 | 1984-07-06 | Thomson Csf | METHOD AND DEVICE FOR OPTICALLY ALIGNING PATTERNS IN TWO PLANS RECONCILED IN AN EXPOSURE APPARATUS COMPRISING A DIVERGENT RADIATION SOURCE |
US4637904A (en) | 1983-11-14 | 1987-01-20 | Rohm And Haas Company | Process for molding a polymeric layer onto a substrate |
US4512848A (en) | 1984-02-06 | 1985-04-23 | Exxon Research And Engineering Co. | Procedure for fabrication of microstructures over large areas using physical replication |
US4908298A (en) | 1985-03-19 | 1990-03-13 | International Business Machines Corporation | Method of creating patterned multilayer films for use in production of semiconductor circuits and systems |
EP0228671A1 (en) | 1985-12-23 | 1987-07-15 | General Electric Company | Method for the production of a coated substrate with controlled surface characteristics |
EP0234632B1 (en) | 1986-02-13 | 1991-01-16 | Koninklijke Philips Electronics N.V. | Matrix for use in a replica process |
US4676868A (en) | 1986-04-23 | 1987-06-30 | Fairchild Semiconductor Corporation | Method for planarizing semiconductor substrates |
US4737425A (en) | 1986-06-10 | 1988-04-12 | International Business Machines Corporation | Patterned resist and process |
KR900004269B1 (en) | 1986-06-11 | 1990-06-18 | 가부시기가이샤 도시바 | Method and device for positioing 1st body and 2nd body |
US4929083A (en) | 1986-06-19 | 1990-05-29 | Xerox Corporation | Focus and overlay characterization and optimization for photolithographic exposure |
JPS6334108A (en) | 1986-07-30 | 1988-02-13 | Hitachi Ltd | Manufacture of substrate for optical disc and device therefor |
JPS6376330A (en) | 1986-09-18 | 1988-04-06 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
FR2604553A1 (en) | 1986-09-29 | 1988-04-01 | Rhone Poulenc Chimie | RIGID POLYMER SUBSTRATE FOR OPTICAL DISC AND OPTICAL DISCS OBTAINED FROM THE SUBSTRATE |
US4707218A (en) | 1986-10-28 | 1987-11-17 | International Business Machines Corporation | Lithographic image size reduction |
JPH06104375B2 (en) | 1986-11-10 | 1994-12-21 | 松下電器産業株式会社 | Printing method |
JP2823016B2 (en) | 1986-12-25 | 1998-11-11 | ソニー株式会社 | Method of manufacturing transmission screen |
US6391798B1 (en) | 1987-02-27 | 2002-05-21 | Agere Systems Guardian Corp. | Process for planarization a semiconductor substrate |
US5736424A (en) | 1987-02-27 | 1998-04-07 | Lucent Technologies Inc. | Device fabrication involving planarization |
US6048799A (en) | 1987-02-27 | 2000-04-11 | Lucent Technologies Inc. | Device fabrication involving surface planarization |
US4731155A (en) | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
US5028361A (en) | 1987-11-09 | 1991-07-02 | Takeo Fujimoto | Method for molding a photosensitive composition |
US4936465A (en) | 1987-12-07 | 1990-06-26 | Zoeld Tibor | Method and apparatus for fast, reliable, and environmentally safe dispensing of fluids, gases and individual particles of a suspension through pressure control at well defined parts of a closed flow-through system |
US5028366A (en) | 1988-01-12 | 1991-07-02 | Air Products And Chemicals, Inc. | Water based mold release compositions for making molded polyurethane foam |
US4862019A (en) | 1988-04-20 | 1989-08-29 | Texas Instruments Incorporated | Single-level poly programmable bit circuit |
US4866307A (en) | 1988-04-20 | 1989-09-12 | Texas Instruments Incorporated | Integrated programmable bit circuit using single-level poly construction |
JPH0269936A (en) | 1988-07-28 | 1990-03-08 | Siemens Ag | Method of making resin structure on semiconductor material |
US4921778A (en) | 1988-07-29 | 1990-05-01 | Shipley Company Inc. | Photoresist pattern fabrication employing chemically amplified metalized material |
EP0355496A3 (en) | 1988-08-15 | 1990-10-10 | Sumitomo Heavy Industries Co., Ltd. | Position detector employing a sector fresnel zone plate |
JP2546350B2 (en) | 1988-09-09 | 1996-10-23 | キヤノン株式会社 | Alignment device |
US4964945A (en) | 1988-12-09 | 1990-10-23 | Minnesota Mining And Manufacturing Company | Lift off patterning process on a flexible substrate |
US5110514A (en) | 1989-05-01 | 1992-05-05 | Soane Technologies, Inc. | Controlled casting of a shrinkable material |
US4932358A (en) | 1989-05-18 | 1990-06-12 | Genus, Inc. | Perimeter wafer seal |
US5053318A (en) | 1989-05-18 | 1991-10-01 | Shipley Company Inc. | Plasma processing with metal mask integration |
CA2011927C (en) | 1989-06-02 | 1996-12-24 | Alan Lee Sidman | Microlithographic method for producing thick, vertically-walled photoresist patterns |
US4919748A (en) | 1989-06-30 | 1990-04-24 | At&T Bell Laboratories | Method for tapered etching |
JP2704001B2 (en) | 1989-07-18 | 1998-01-26 | キヤノン株式会社 | Position detection device |
US5151754A (en) | 1989-10-06 | 1992-09-29 | Kabushiki Kaisha Toshiba | Method and an apparatus for measuring a displacement between two objects and a method and an apparatus for measuring a gap distance between two objects |
US5362606A (en) | 1989-10-18 | 1994-11-08 | Massachusetts Institute Of Technology | Positive resist pattern formation through focused ion beam exposure and surface barrier silylation |
US5073230A (en) | 1990-04-17 | 1991-12-17 | Arizona Board Of Regents Acting On Behalf Of Arizona State University | Means and methods of lifting and relocating an epitaxial device layer |
US5003062A (en) | 1990-04-19 | 1991-03-26 | Taiwan Semiconductor Manufacturing Co. | Semiconductor planarization process for submicron devices |
US5328810A (en) | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
US5451435A (en) | 1990-06-18 | 1995-09-19 | At&T Corp. | Method for forming dielectric |
DE4029912A1 (en) | 1990-09-21 | 1992-03-26 | Philips Patentverwaltung | METHOD FOR FORMING AT LEAST ONE TRENCH IN A SUBSTRATE LAYER |
US5331371A (en) | 1990-09-26 | 1994-07-19 | Canon Kabushiki Kaisha | Alignment and exposure method |
US5126006A (en) | 1990-10-30 | 1992-06-30 | International Business Machines Corp. | Plural level chip masking |
US5072126A (en) | 1990-10-31 | 1991-12-10 | International Business Machines Corporation | Promixity alignment using polarized illumination and double conjugate projection lens |
US5288436A (en) | 1990-11-06 | 1994-02-22 | Colloptics, Inc. | Methods of fabricating a collagen lenticule precursor for modifying the cornea |
US5362940A (en) | 1990-11-09 | 1994-11-08 | Litel Instruments | Use of Fresnel zone plates for material processing |
JP2796899B2 (en) | 1991-02-16 | 1998-09-10 | 住友重機械工業株式会社 | Illumination method for band light and multicolor light in a chromatic aberration double focus device |
US5240878A (en) | 1991-04-26 | 1993-08-31 | International Business Machines Corporation | Method for forming patterned films on a substrate |
US5212147A (en) | 1991-05-15 | 1993-05-18 | Hewlett-Packard Company | Method of forming a patterned in-situ high Tc superconductive film |
FR2677043B1 (en) | 1991-05-29 | 1993-12-24 | Solems | METHOD, DEVICE AND APPARATUS FOR TREATING A SUBSTRATE WITH A LOW PRESSURE PLASMA. |
EP0524759A1 (en) | 1991-07-23 | 1993-01-27 | AT&T Corp. | Device fabrication process |
US5357122A (en) | 1991-09-05 | 1994-10-18 | Sony Corporation | Three-dimensional optical-electronic integrated circuit device with raised sections |
JPH0580530A (en) | 1991-09-24 | 1993-04-02 | Hitachi Ltd | Production of thin film pattern |
US5277749A (en) | 1991-10-17 | 1994-01-11 | International Business Machines Corporation | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps |
US5263073A (en) | 1991-12-20 | 1993-11-16 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Scanning systems for high resolution E-beam and X-ray lithography |
JP3074579B2 (en) | 1992-01-31 | 2000-08-07 | キヤノン株式会社 | Position shift correction method |
JP2867194B2 (en) | 1992-02-05 | 1999-03-08 | 東京エレクトロン株式会社 | Processing device and processing method |
US5204739A (en) | 1992-02-07 | 1993-04-20 | Karl Suss America, Inc. | Proximity mask alignment using a stored video image |
US5244818A (en) | 1992-04-08 | 1993-09-14 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits |
US5545367A (en) | 1992-04-15 | 1996-08-13 | Soane Technologies, Inc. | Rapid prototype three dimensional stereolithography |
US5246880A (en) | 1992-04-27 | 1993-09-21 | Eastman Kodak Company | Method for creating substrate electrodes for flip chip and other applications |
JP3157605B2 (en) | 1992-04-28 | 2001-04-16 | 東京エレクトロン株式会社 | Plasma processing equipment |
EP0568478A1 (en) | 1992-04-29 | 1993-11-03 | International Business Machines Corporation | Darkfield alignment system using a confocal spatial filter |
US5407763A (en) * | 1992-05-28 | 1995-04-18 | Ceridian Corporation | Mask alignment mark system |
US5371822A (en) | 1992-06-09 | 1994-12-06 | Digital Equipment Corporation | Method of packaging and assembling opto-electronic integrated circuits |
US5232874A (en) | 1992-06-22 | 1993-08-03 | Micron Technology, Inc. | Method for producing a semiconductor wafer having shallow and deep buried contacts |
US5376810A (en) | 1992-06-26 | 1994-12-27 | California Institute Of Technology | Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response |
US5445195A (en) | 1992-07-15 | 1995-08-29 | Kim; Dae S. | Automatic computer-controlled liquid dispenser |
US5601641A (en) | 1992-07-21 | 1997-02-11 | Tse Industries, Inc. | Mold release composition with polybutadiene and method of coating a mold core |
US5250472A (en) | 1992-09-03 | 1993-10-05 | Industrial Technology Research Institute | Spin-on-glass integration planarization having siloxane partial etchback and silicate processes |
US5431777A (en) | 1992-09-17 | 1995-07-11 | International Business Machines Corporation | Methods and compositions for the selective etching of silicon |
TW227628B (en) | 1992-12-10 | 1994-08-01 | Samsung Electronics Co Ltd | |
JP2821073B2 (en) | 1992-12-18 | 1998-11-05 | 松下電器産業株式会社 | Gap control device and gap control method |
US6153886A (en) | 1993-02-19 | 2000-11-28 | Nikon Corporation | Alignment apparatus in projection exposure apparatus |
DE69405451T2 (en) | 1993-03-16 | 1998-03-12 | Koninkl Philips Electronics Nv | Method and device for producing a structured relief image from cross-linked photoresist on a flat substrate surface |
US5414514A (en) | 1993-06-01 | 1995-05-09 | Massachusetts Institute Of Technology | On-axis interferometric alignment of plates using the spatial phase of interference patterns |
US5324683A (en) | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
JP2837063B2 (en) | 1993-06-04 | 1998-12-14 | シャープ株式会社 | Method of forming resist pattern |
US5449117A (en) | 1993-10-04 | 1995-09-12 | Technical Concepts, L.P. | Apparatus and method for controllably dispensing drops of liquid |
US5900160A (en) | 1993-10-04 | 1999-05-04 | President And Fellows Of Harvard College | Methods of etching articles via microcontact printing |
US5512131A (en) | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
US6776094B1 (en) | 1993-10-04 | 2004-08-17 | President & Fellows Of Harvard College | Kit For Microcontact Printing |
US6180239B1 (en) | 1993-10-04 | 2001-01-30 | President And Fellows Of Harvard College | Microcontact printing on surfaces and derivative articles |
US5776748A (en) | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
NL9401260A (en) | 1993-11-12 | 1995-06-01 | Cornelis Johannes Maria Van Ri | Membrane for microfiltration, ultrafiltration, gas separation and catalysis, method for manufacturing such a membrane, mold for manufacturing such a membrane, as well as various separation systems comprising such a membrane. |
US5434107A (en) | 1994-01-28 | 1995-07-18 | Texas Instruments Incorporated | Method for planarization |
DE4408537A1 (en) | 1994-03-14 | 1995-09-21 | Leybold Ag | Device for the transport of substrates |
US5573877A (en) | 1994-03-15 | 1996-11-12 | Matsushita Electric Industrial Co., Ltd. | Exposure method and exposure apparatus |
US5542605A (en) | 1994-04-07 | 1996-08-06 | Flow-Rite Controls, Ltd. | Automatic liquid dispenser |
US5453157A (en) | 1994-05-16 | 1995-09-26 | Texas Instruments Incorporated | Low temperature anisotropic ashing of resist for semiconductor fabrication |
US5686356A (en) | 1994-09-30 | 1997-11-11 | Texas Instruments Incorporated | Conductor reticulation for improved device planarity |
US5477058A (en) | 1994-11-09 | 1995-12-19 | Kabushiki Kaisha Toshiba | Attenuated phase-shifting mask with opaque reticle alignment marks |
DE69509046T2 (en) | 1994-11-30 | 1999-10-21 | Applied Materials Inc | Plasma reactors for the treatment of semiconductor wafers |
US5458520A (en) | 1994-12-13 | 1995-10-17 | International Business Machines Corporation | Method for producing planar field emission structure |
US6034378A (en) | 1995-02-01 | 2000-03-07 | Nikon Corporation | Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus |
US5628917A (en) | 1995-02-03 | 1997-05-13 | Cornell Research Foundation, Inc. | Masking process for fabricating ultra-high aspect ratio, wafer-free micro-opto-electromechanical structures |
US5504793A (en) | 1995-02-17 | 1996-04-02 | Loral Federal Systems Company | Magnification correction for 1-X proximity X-Ray lithography |
JP2690036B2 (en) * | 1995-03-23 | 1997-12-10 | 工業技術院長 | X-ray spectroscopic focusing element |
US5849209A (en) | 1995-03-31 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Mold material made with additives |
US5843363A (en) | 1995-03-31 | 1998-12-01 | Siemens Aktiengesellschaft | Ablation patterning of multi-layered structures |
US6342389B1 (en) | 1995-04-10 | 2002-01-29 | Roger S. Cubicciotti | Modified phycobilisomes and uses therefore |
GB9509487D0 (en) | 1995-05-10 | 1995-07-05 | Ici Plc | Micro relief element & preparation thereof |
US5820769A (en) | 1995-05-24 | 1998-10-13 | Regents Of The University Of Minnesota | Method for making magnetic storage having discrete elements with quantized magnetic moments |
US5948570A (en) | 1995-05-26 | 1999-09-07 | Lucent Technologies Inc. | Process for dry lithographic etching |
US5808742A (en) * | 1995-05-31 | 1998-09-15 | Massachusetts Institute Of Technology | Optical alignment apparatus having multiple parallel alignment marks |
US5654238A (en) | 1995-08-03 | 1997-08-05 | International Business Machines Corporation | Method for etching vertical contact holes without substrate damage caused by directional etching |
US5849222A (en) | 1995-09-29 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Method for reducing lens hole defects in production of contact lens blanks |
US5545570A (en) | 1995-09-29 | 1996-08-13 | Taiwan Semiconductor Manufacturing Company | Method of inspecting first layer overlay shift in global alignment process |
US6518189B1 (en) | 1995-11-15 | 2003-02-11 | Regents Of The University Of Minnesota | Method and apparatus for high density nanostructures |
US5772905A (en) | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US7758794B2 (en) | 2001-10-29 | 2010-07-20 | Princeton University | Method of making an article comprising nanoscale patterns with reduced edge roughness |
US6482742B1 (en) | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US6309580B1 (en) | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US20040137734A1 (en) | 1995-11-15 | 2004-07-15 | Princeton University | Compositions and processes for nanoimprinting |
US20040036201A1 (en) | 2000-07-18 | 2004-02-26 | Princeton University | Methods and apparatus of field-induced pressure imprint lithography |
JP2842362B2 (en) | 1996-02-29 | 1999-01-06 | 日本電気株式会社 | Superposition measurement method |
US5669303A (en) | 1996-03-04 | 1997-09-23 | Motorola | Apparatus and method for stamping a surface |
US6355198B1 (en) | 1996-03-15 | 2002-03-12 | President And Fellows Of Harvard College | Method of forming articles including waveguides via capillary micromolding and microtransfer molding |
US20030179354A1 (en) | 1996-03-22 | 2003-09-25 | Nikon Corporation | Mask-holding apparatus for a light exposure apparatus and related scanning-exposure method |
JPH09283621A (en) | 1996-04-10 | 1997-10-31 | Murata Mfg Co Ltd | Formation of t-type gate electrode of semiconductor device and structure thereof |
US5942443A (en) | 1996-06-28 | 1999-08-24 | Caliper Technologies Corporation | High throughput screening assay systems in microscale fluidic devices |
US5888650A (en) | 1996-06-03 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Temperature-responsive adhesive article |
US6074827A (en) | 1996-07-30 | 2000-06-13 | Aclara Biosciences, Inc. | Microfluidic method for nucleic acid purification and processing |
JP2002513445A (en) | 1996-09-06 | 2002-05-08 | オブデュキャット、アクチボラグ | Method for anisotropically etching structures in conductive materials |
US5858580A (en) | 1997-09-17 | 1999-01-12 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
US6228539B1 (en) | 1996-09-18 | 2001-05-08 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
JPH10123534A (en) | 1996-10-23 | 1998-05-15 | Toshiba Corp | Liquid crystal display element |
US5895263A (en) | 1996-12-19 | 1999-04-20 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
US5983906A (en) | 1997-01-24 | 1999-11-16 | Applied Materials, Inc. | Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment |
US6049373A (en) | 1997-02-28 | 2000-04-11 | Sumitomo Heavy Industries, Ltd. | Position detection technique applied to proximity exposure |
US6051179A (en) | 1997-03-19 | 2000-04-18 | Replicator Systems, Inc. | Apparatus and method for production of three-dimensional models by spatial light modulator |
JP3296239B2 (en) | 1997-03-27 | 2002-06-24 | ウシオ電機株式会社 | Proximity exposure apparatus with gap setting mechanism |
US5817579A (en) | 1997-04-09 | 1998-10-06 | Vanguard International Semiconductor Corporation | Two step plasma etch method for forming self aligned contact |
US5948470A (en) | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
US5812629A (en) | 1997-04-30 | 1998-09-22 | Clauser; John F. | Ultrahigh resolution interferometric x-ray imaging |
US5926690A (en) | 1997-05-28 | 1999-07-20 | Advanced Micro Devices, Inc. | Run-to-run control process for controlling critical dimensions |
US5888751A (en) * | 1997-07-15 | 1999-03-30 | Ludwig Institute For Cancer Research | Method for diagnosis and treating cancers, and methods for identifying pathogenic markers in a sample of normal cells |
US5974150A (en) | 1997-09-30 | 1999-10-26 | Tracer Detection Technology Corp. | System and method for authentication of goods |
JPH11121359A (en) * | 1997-10-16 | 1999-04-30 | Canon Inc | Exposure method and production of device |
US5877861A (en) | 1997-11-14 | 1999-03-02 | International Business Machines Corporation | Method for overlay control system |
US6150680A (en) | 1998-03-05 | 2000-11-21 | Welch Allyn, Inc. | Field effect semiconductor device having dipole barrier |
EP1060299A1 (en) | 1998-03-05 | 2000-12-20 | Obducat AB | Method of etching |
JP3780700B2 (en) | 1998-05-26 | 2006-05-31 | セイコーエプソン株式会社 | Pattern forming method, pattern forming apparatus, pattern forming plate, pattern forming plate manufacturing method, color filter manufacturing method, conductive film manufacturing method, and liquid crystal panel manufacturing method |
US6239590B1 (en) | 1998-05-26 | 2001-05-29 | Micron Technology, Inc. | Calibration target for calibrating semiconductor wafer test systems |
US6150231A (en) | 1998-06-15 | 2000-11-21 | Siemens Aktiengesellschaft | Overlay measurement technique using moire patterns |
FI109944B (en) | 1998-08-11 | 2002-10-31 | Valtion Teknillinen | Optoelectronic component and manufacturing method |
US5907782A (en) | 1998-08-15 | 1999-05-25 | Acer Semiconductor Manufacturing Inc. | Method of forming a multiple fin-pillar capacitor for a high density dram cell |
US6713238B1 (en) | 1998-10-09 | 2004-03-30 | Stephen Y. Chou | Microscale patterning and articles formed thereby |
US6218316B1 (en) | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6665014B1 (en) | 1998-11-25 | 2003-12-16 | Intel Corporation | Microlens and photodetector |
JP4846888B2 (en) | 1998-12-01 | 2011-12-28 | キヤノン株式会社 | Alignment method |
US6388755B1 (en) | 1998-12-03 | 2002-05-14 | Advanced Optical Technologies, Inc. | Wireless position and orientation detecting system |
US6247986B1 (en) | 1998-12-23 | 2001-06-19 | 3M Innovative Properties Company | Method for precise molding and alignment of structures on a substrate using a stretchable mold |
US6521536B1 (en) | 1999-01-11 | 2003-02-18 | Micron Technology, Inc. | Planarization process |
US6076827A (en) * | 1999-02-01 | 2000-06-20 | Luchsinger; Charles | Magnetic shooter with flexible/swiveling shaft |
US6274294B1 (en) | 1999-02-03 | 2001-08-14 | Electroformed Stents, Inc. | Cylindrical photolithography exposure process and apparatus |
US6565928B2 (en) | 1999-03-08 | 2003-05-20 | Tokyo Electron Limited | Film forming method and film forming apparatus |
US6334960B1 (en) | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
TW419720B (en) * | 1999-03-26 | 2001-01-21 | Mosel Vitelic Inc | The method of monitoring the overlay accuracy of the stepper and the device using the same |
US6387783B1 (en) | 1999-04-26 | 2002-05-14 | International Business Machines Corporation | Methods of T-gate fabrication using a hybrid resist |
US20040029395A1 (en) | 2002-08-12 | 2004-02-12 | Peng Zhang | Process solutions containing acetylenic diol surfactants |
JP2000323461A (en) * | 1999-05-11 | 2000-11-24 | Nec Corp | Fine pattern forming device, its manufacture, and method of forming the same |
US6522411B1 (en) | 1999-05-25 | 2003-02-18 | Massachusetts Institute Of Technology | Optical gap measuring apparatus and method having two-dimensional grating mark with chirp in one direction |
US6255022B1 (en) | 1999-06-17 | 2001-07-03 | Taiwan Semiconductor Manufacturing Company | Dry development process for a bi-layer resist system utilized to reduce microloading |
EP1065567A3 (en) | 1999-06-29 | 2001-05-16 | Applied Materials, Inc. | Integrated critical dimension control |
KR100549776B1 (en) | 1999-07-01 | 2006-02-06 | 에이에스엠엘 네델란즈 비.브이. | Apparatus and method of image enhancement through spatial filtering |
US6242363B1 (en) | 1999-08-11 | 2001-06-05 | Adc Telecommunications, Inc. | Method of etching a wafer layer using a sacrificial wall to form vertical sidewall |
US6383928B1 (en) | 1999-09-02 | 2002-05-07 | Texas Instruments Incorporated | Post copper CMP clean |
US6517995B1 (en) | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6329256B1 (en) | 1999-09-24 | 2001-12-11 | Advanced Micro Devices, Inc. | Self-aligned damascene gate formation with low gate resistance |
US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
US6623579B1 (en) | 1999-11-02 | 2003-09-23 | Alien Technology Corporation | Methods and apparatus for fluidic self assembly |
AU779699B2 (en) | 1999-12-23 | 2005-02-10 | Universitat Konstanz | Methods and apparatus for forming submicron patterns on films |
US6165911A (en) | 1999-12-29 | 2000-12-26 | Calveley; Peter Braden | Method of patterning a metal layer |
US6498640B1 (en) | 1999-12-30 | 2002-12-24 | Koninklijke Philips Electronics N.V. | Method to measure alignment using latent image grating structures |
US6376379B1 (en) | 2000-02-01 | 2002-04-23 | Chartered Semiconductor Manufacturing Ltd. | Method of hard mask patterning |
US6337262B1 (en) | 2000-03-06 | 2002-01-08 | Chartered Semiconductor Manufacturing Ltd. | Self aligned T-top gate process integration |
US6387330B1 (en) | 2000-04-12 | 2002-05-14 | George Steven Bova | Method and apparatus for storing and dispensing reagents |
US7859519B2 (en) | 2000-05-01 | 2010-12-28 | Tulbert David J | Human-machine interface |
US6462818B1 (en) | 2000-06-22 | 2002-10-08 | Kla-Tencor Corporation | Overlay alignment mark design |
US6593240B1 (en) | 2000-06-28 | 2003-07-15 | Infineon Technologies, North America Corp | Two step chemical mechanical polishing process |
US6696220B2 (en) | 2000-10-12 | 2004-02-24 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro-and nano-imprint lithography |
CN100504598C (en) | 2000-07-16 | 2009-06-24 | 得克萨斯州大学系统董事会 | High-resolution overlay alignment methods and systems for imprint lithography |
WO2002006902A2 (en) | 2000-07-17 | 2002-01-24 | Board Of Regents, The University Of Texas System | Method and system of automatic fluid dispensing for imprint lithography processes |
US7211214B2 (en) | 2000-07-18 | 2007-05-01 | Princeton University | Laser assisted direct imprint lithography |
US20050037143A1 (en) | 2000-07-18 | 2005-02-17 | Chou Stephen Y. | Imprint lithography with improved monitoring and control and apparatus therefor |
US7635262B2 (en) | 2000-07-18 | 2009-12-22 | Princeton University | Lithographic apparatus for fluid pressure imprint lithography |
US6326627B1 (en) | 2000-08-02 | 2001-12-04 | Archimedes Technology Group, Inc. | Mass filtering sputtered ion source |
KR100350811B1 (en) | 2000-08-19 | 2002-09-05 | 삼성전자 주식회사 | Metal Via Contact of Semiconductor Devices and Method of Forming it |
US6451705B1 (en) | 2000-08-31 | 2002-09-17 | Micron Technology, Inc. | Self-aligned PECVD etch mask |
US6629292B1 (en) | 2000-10-06 | 2003-09-30 | International Business Machines Corporation | Method for forming graphical images in semiconductor devices |
US6879162B2 (en) | 2000-11-07 | 2005-04-12 | Sri International | System and method of micro-fluidic handling and dispensing using micro-nozzle structures |
US6790763B2 (en) | 2000-12-04 | 2004-09-14 | Ebara Corporation | Substrate processing method |
US6632742B2 (en) | 2001-04-18 | 2003-10-14 | Promos Technologies Inc. | Method for avoiding defects produced in the CMP process |
US6620733B2 (en) | 2001-02-12 | 2003-09-16 | Lam Research Corporation | Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics |
US6819426B2 (en) | 2001-02-12 | 2004-11-16 | Therma-Wave, Inc. | Overlay alignment metrology using diffraction gratings |
US6841483B2 (en) | 2001-02-12 | 2005-01-11 | Lam Research Corporation | Unique process chemistry for etching organic low-k materials |
US6489068B1 (en) | 2001-02-21 | 2002-12-03 | Advanced Micro Devices, Inc. | Process for observing overlay errors on lithographic masks |
US6387787B1 (en) | 2001-03-02 | 2002-05-14 | Motorola, Inc. | Lithographic template and method of formation and use |
US6955767B2 (en) | 2001-03-22 | 2005-10-18 | Hewlett-Packard Development Company, Lp. | Scanning probe based lithographic alignment |
US6517977B2 (en) | 2001-03-28 | 2003-02-11 | Motorola, Inc. | Lithographic template and method of formation and use |
US6791669B2 (en) | 2001-04-12 | 2004-09-14 | Nikon Corporation | Positioning device and exposure apparatus including the same |
US6383888B1 (en) | 2001-04-18 | 2002-05-07 | Advanced Micro Devices, Inc. | Method and apparatus for selecting wafer alignment marks based on film thickness variation |
US6534418B1 (en) | 2001-04-30 | 2003-03-18 | Advanced Micro Devices, Inc. | Use of silicon containing imaging layer to define sub-resolution gate structures |
US6541360B1 (en) | 2001-04-30 | 2003-04-01 | Advanced Micro Devices, Inc. | Bi-layer trim etch process to form integrated circuit gate structures |
US6964793B2 (en) | 2002-05-16 | 2005-11-15 | Board Of Regents, The University Of Texas System | Method for fabricating nanoscale patterns in light curable compositions using an electric field |
JP2002348680A (en) | 2001-05-22 | 2002-12-04 | Sharp Corp | Pattern of metal film and manufacturing method therefor |
US6847433B2 (en) | 2001-06-01 | 2005-01-25 | Agere Systems, Inc. | Holder, system, and process for improving overlay in lithography |
TW488080B (en) | 2001-06-08 | 2002-05-21 | Au Optronics Corp | Method for producing thin film transistor |
TWI285279B (en) | 2001-06-14 | 2007-08-11 | Himax Tech Ltd | Liquid crystal display panel having sealant |
US7049049B2 (en) | 2001-06-27 | 2006-05-23 | University Of South Florida | Maskless photolithography for using photoreactive agents |
US20050064344A1 (en) | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
EP1417474B1 (en) | 2001-07-25 | 2021-12-29 | The Trustees Of Princeton University | Nanochannel arrays and their preparation and use for high throughput macromolecular analysis |
US6678038B2 (en) | 2001-08-03 | 2004-01-13 | Nikon Corporation | Apparatus and methods for detecting tool-induced shift in microlithography apparatus |
CN100347608C (en) | 2001-09-25 | 2007-11-07 | 米卢塔技术株式会社 | Method for forming a micro-pattern on a substrate by using capillary force |
US20030080472A1 (en) | 2001-10-29 | 2003-05-01 | Chou Stephen Y. | Lithographic method with bonded release layer for molding small patterns |
US6716767B2 (en) | 2001-10-31 | 2004-04-06 | Brewer Science, Inc. | Contact planarization materials that generate no volatile byproducts or residue during curing |
JP2003202584A (en) | 2002-01-08 | 2003-07-18 | Toshiba Corp | Liquid crystal display device |
US6621960B2 (en) | 2002-01-24 | 2003-09-16 | Oplink Communications, Inc. | Method of fabricating multiple superimposed fiber Bragg gratings |
US7455955B2 (en) | 2002-02-27 | 2008-11-25 | Brewer Science Inc. | Planarization method for multi-layer lithography processing |
TW594431B (en) | 2002-03-01 | 2004-06-21 | Asml Netherlands Bv | Calibration methods, calibration substrates, lithographic apparatus and device manufacturing methods |
US7117583B2 (en) | 2002-03-18 | 2006-10-10 | International Business Machines Corporation | Method and apparatus using a pre-patterned seed layer for providing an aligned coil for an inductive head structure |
US7223350B2 (en) | 2002-03-29 | 2007-05-29 | International Business Machines Corporation | Planarization in an encapsulation process for thin film surfaces |
US20030192041A1 (en) * | 2002-04-03 | 2003-10-09 | Mentze Duane E. | software distribution system and method |
CA2482566C (en) | 2002-04-16 | 2010-07-20 | Princeton University | Gradient structures interfacing microfluidics and nanofluidics, methods for fabrication and uses thereof |
US6783717B2 (en) | 2002-04-22 | 2004-08-31 | International Business Machines Corporation | Process of fabricating a precision microcontact printing stamp |
US6849558B2 (en) | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
US20030224116A1 (en) | 2002-05-30 | 2003-12-04 | Erli Chen | Non-conformal overcoat for nonometer-sized surface structure |
MY164487A (en) * | 2002-07-11 | 2017-12-29 | Molecular Imprints Inc | Step and repeat imprint lithography processes |
US6900881B2 (en) | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US6908861B2 (en) | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US6916584B2 (en) | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US7027156B2 (en) | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US7071088B2 (en) | 2002-08-23 | 2006-07-04 | Molecular Imprints, Inc. | Method for fabricating bulbous-shaped vias |
US20040065252A1 (en) | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method of forming a layer on a substrate to facilitate fabrication of metrology standards |
US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
US6833325B2 (en) | 2002-10-11 | 2004-12-21 | Lam Research Corporation | Method for plasma etching performance enhancement |
US6665119B1 (en) | 2002-10-15 | 2003-12-16 | Eastman Kodak Company | Wire grid polarizer |
US6980282B2 (en) * | 2002-12-11 | 2005-12-27 | Molecular Imprints, Inc. | Method for modulating shapes of substrates |
US7750059B2 (en) | 2002-12-04 | 2010-07-06 | Hewlett-Packard Development Company, L.P. | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
JP4563181B2 (en) | 2002-12-13 | 2010-10-13 | モレキュラー・インプリンツ・インコーポレーテッド | Magnification correction using substrate surface curvature |
US7113336B2 (en) | 2002-12-30 | 2006-09-26 | Ian Crosby | Microlens including wire-grid polarizer and methods of manufacture |
US7179396B2 (en) | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
EP1606834B1 (en) * | 2003-03-27 | 2013-06-05 | Korea Institute Of Machinery & Materials | Uv nanoimprint lithography process using elementwise embossed stamp |
US7070406B2 (en) | 2003-04-29 | 2006-07-04 | Hewlett-Packard Development Company, L.P. | Apparatus for embossing a flexible substrate with a pattern carried by an optically transparent compliant media |
TWI228638B (en) | 2003-06-10 | 2005-03-01 | Ind Tech Res Inst | Method for and apparatus for bonding patterned imprint to a substrate by adhering means |
US7790231B2 (en) | 2003-07-10 | 2010-09-07 | Brewer Science Inc. | Automated process and apparatus for planarization of topographical surfaces |
JP2005116978A (en) * | 2003-10-10 | 2005-04-28 | Sumitomo Heavy Ind Ltd | Nano imprint equipment and method |
JP4322096B2 (en) | 2003-11-14 | 2009-08-26 | Tdk株式会社 | RESIST PATTERN FORMING METHOD, MAGNETIC RECORDING MEDIUM, AND MAGNETIC HEAD MANUFACTURING METHOD |
KR100566700B1 (en) | 2004-01-15 | 2006-04-03 | 삼성전자주식회사 | Method for forming mask pattern, template for forming mask pattern and method for forming template |
EP1774407B1 (en) | 2004-06-03 | 2017-08-09 | Board of Regents, The University of Texas System | System and method for improvement of alignment and overlay for microlithography |
JP4937500B2 (en) * | 2004-06-15 | 2012-05-23 | 大日本印刷株式会社 | Imprint method |
US7673775B2 (en) | 2004-06-25 | 2010-03-09 | Cristian Penciu | Apparatus for mixing and dispensing fluids |
US7785526B2 (en) | 2004-07-20 | 2010-08-31 | Molecular Imprints, Inc. | Imprint alignment method, system, and template |
US20060017876A1 (en) | 2004-07-23 | 2006-01-26 | Molecular Imprints, Inc. | Displays and method for fabricating displays |
US7105452B2 (en) | 2004-08-13 | 2006-09-12 | Molecular Imprints, Inc. | Method of planarizing a semiconductor substrate with an etching chemistry |
US7244386B2 (en) | 2004-09-27 | 2007-07-17 | Molecular Imprints, Inc. | Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom |
US7292326B2 (en) | 2004-11-30 | 2007-11-06 | Molecular Imprints, Inc. | Interferometric analysis for the manufacture of nano-scale devices |
US7630067B2 (en) | 2004-11-30 | 2009-12-08 | Molecular Imprints, Inc. | Interferometric analysis method for the manufacture of nano-scale devices |
JP5198071B2 (en) | 2004-12-01 | 2013-05-15 | モレキュラー・インプリンツ・インコーポレーテッド | Exposure method for thermal management in imprint lithography process |
US7357876B2 (en) | 2004-12-01 | 2008-04-15 | Molecular Imprints, Inc. | Eliminating printability of sub-resolution defects in imprint lithography |
JP2006165371A (en) * | 2004-12-09 | 2006-06-22 | Canon Inc | Transfer apparatus and device manufacturing method |
US8011916B2 (en) * | 2005-09-06 | 2011-09-06 | Canon Kabushiki Kaisha | Mold, imprint apparatus, and process for producing structure |
US7906058B2 (en) | 2005-12-01 | 2011-03-15 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
EP1957249B1 (en) | 2005-12-08 | 2014-11-12 | Canon Nanotechnologies, Inc. | Method and system for double-sided patterning of substrates |
US7670530B2 (en) | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
US7517211B2 (en) * | 2005-12-21 | 2009-04-14 | Asml Netherlands B.V. | Imprint lithography |
JP5213335B2 (en) * | 2006-02-01 | 2013-06-19 | キヤノン株式会社 | Imprint mold and method for producing structure using the mold |
US7360851B1 (en) | 2006-02-15 | 2008-04-22 | Kla-Tencor Technologies Corporation | Automated pattern recognition of imprint technology |
US7802978B2 (en) | 2006-04-03 | 2010-09-28 | Molecular Imprints, Inc. | Imprinting of partial fields at the edge of the wafer |
-
2007
- 2007-04-03 KR KR1020087017383A patent/KR20090003153A/en not_active Application Discontinuation
- 2007-04-03 JP JP2009504287A patent/JP5306989B2/en not_active Expired - Fee Related
- 2007-04-03 WO PCT/US2007/008434 patent/WO2007117524A2/en active Application Filing
- 2007-04-03 US US11/695,850 patent/US7780893B2/en not_active Expired - Fee Related
- 2007-04-03 TW TW096111802A patent/TW200801794A/en unknown
-
2010
- 2010-07-13 US US12/835,018 patent/US20100278954A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6344698B2 (en) * | 1999-02-22 | 2002-02-05 | International Business Machines Corporation | More robust alignment mark design |
US6780001B2 (en) * | 1999-07-30 | 2004-08-24 | Formfactor, Inc. | Forming tool for forming a contoured microelectronic spring mold |
US20050067379A1 (en) * | 2003-09-25 | 2005-03-31 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102591142A (en) * | 2012-02-29 | 2012-07-18 | 青岛理工大学 | Nano imprinting device and method for imaging sapphire substrate |
Also Published As
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US7780893B2 (en) | 2010-08-24 |
JP2009532909A (en) | 2009-09-10 |
WO2007117524A2 (en) | 2007-10-18 |
TW200801794A (en) | 2008-01-01 |
WO2007117524A3 (en) | 2008-10-02 |
US20070228610A1 (en) | 2007-10-04 |
JP5306989B2 (en) | 2013-10-02 |
KR20090003153A (en) | 2009-01-09 |
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