US20100206230A1 - Methods of low temperature oxidation - Google Patents
Methods of low temperature oxidation Download PDFInfo
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- US20100206230A1 US20100206230A1 US12/769,445 US76944510A US2010206230A1 US 20100206230 A1 US20100206230 A1 US 20100206230A1 US 76944510 A US76944510 A US 76944510A US 2010206230 A1 US2010206230 A1 US 2010206230A1
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- 238000007254 oxidation reaction Methods 0.000 title claims description 25
- 230000003647 oxidation Effects 0.000 title claims description 24
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- 239000000758 substrate Substances 0.000 claims abstract description 58
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000003989 dielectric material Substances 0.000 claims abstract description 23
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Definitions
- the present invention is directed to integrated circuits and their processing for the manufacture of semiconductor devices. More particularly, the invention provides a method and device for an oxidized dielectric in a semiconductor device. Merely by way of example, the invention has been applied to low temperature plasma oxidation of silicon for forming a gate dielectric in an MOS device. But it would be recognized that the invention has a much broader range of applicability. For example, the invention can be applied to other silicon devices such as bipolar devices or memory device, e.g. DRAM, Flash memory, MONOS, or other non-volatile memory devices.
- bipolar devices e.g. DRAM, Flash memory, MONOS, or other non-volatile memory devices.
- Integrated circuits or “ICs” have evolved from a handful of interconnected devices fabricated on a single chip of silicon to millions of devices. In order to achieve improvements in complexity and circuit density, the size of the smallest device feature has become smaller with each generation of ICs. Increasing circuit density has not only improved the complexity and performance of ICs but has also provided lower cost parts to the consumer. On the other hand, making devices smaller is very challenging, as each process used in IC fabrication has a limit. That is to say, a given process typically only works down to a certain feature size, and then either the process or the device layout needs to be changed. An example of such a limit is dielectric films used for the manufacture of integrated circuits in a cost effective and efficient way.
- dielectric films In modern integrated circuit, dielectric films often form important components. For example, thin gate dielectric in an MOS transistor and the tunneling dielectric in a memory device play important roles in device performance and reliability. Thick dielectrics are often used for device isolation, such as in shallow trench isolation or interlayer isolation. Conventionally, thick dielectric films are often formed using chemical vapor deposition (CVD), whereas thin dielectrics are formed by thermal oxidation of silicon. As device dimension becomes smaller, it becomes increasingly difficult to use conventional techniques for forming dielectrics to meet device requirements.
- the present invention is directed to semiconductor devices and their manufacture. More particularly, the invention provides a method for forming an oxidized dielectric in a semiconductor device.
- the invention has been applied to low temperature plasma oxidation of silicon for forming a gate dielectric in an MOS device. But it would be recognized that the invention has a much broader range of applicability.
- the invention can be applied to other silicon devices such as bipolar devices or memory device, e.g. DRAM, Flash memory, MONOS, or other non-volatile memory devices.
- a method for forming a dielectric includes providing a substrate having a silicon-containing semiconductor layer.
- a surface portion of the silicon-containing material is plasma oxidized to convert the surface portion into an oxidized dielectric material at a process temperature of about 800° C. or less, wherein the plasma oxidization process comprises an oxygen-containing element and a fluorocarbon-containing element.
- the plasma process is free from silicon-containing plasma source gases.
- the substrate is maintained at a temperature in a process temperature range of about 150° C.-550° C.
- the flow rate of the fluorocarbon-containing gas is used to control the thickness of the oxidized dielectric.
- the plasma process also includes a forming gas (N 2 H 2 ).
- the forming gas includes a mixture of hydrogen gas and nitrogen gas, with about 2-6% hydrogen gas.
- the plasma process is free from silicon-containing plasma source gas, in contrast to conventional plasma CVD oxide process which requires a silicon-containing precursor in the plasma source gas.
- the silicon-containing semiconductor layer may include single crystalline silicon, polycrystalline silicon, amorphous silicon, doped silicon, or other silicon-containing semiconductor material.
- the silicon-containing semiconductor layer may include a silicon layer or a silicon germanium layer.
- the oxygen-containing gas is selected from the group consisting of O 2 , O 3 , NO, and NO 2
- the fluorocarbon-containing gas is selected from the group consisting of CF 4 , CHF 3 , CH 2 F 2 , and CH 3 F.
- a thickness associated with the oxidized dielectric can be adjusted by selecting a CF 4 flow rate.
- the substrate is maintained at a process temperature in the range of about 150° C. to 450° C.
- the plasma process the substrate is maintained at a temperature of about 250° C.
- a plasma process includes a process pressure in a plasma chamber in the range of about 100 ⁇ 10000 mTorr.
- a specific process condition for the plasma process includes a process pressure of about 1500 mTorr, an R.F. power of about 2500 W, a process temperature of about 250° C., oxygen gas at a flow rate of about 3000 sccm, a forming gas at a flow rate of about 300 sccm, and a carbon fluorine-containing gas at a flow rate in the range of about 25 sccm.
- the plasma process includes a process pressure in the range of about 100 ⁇ 10000 mTorr, an R.F.
- the present invention provides method for forming a dielectric in a semiconductor device.
- the method includes providing a semiconductor substrate which includes a surface region.
- the method includes subjecting the substrate to a plasma process which includes an oxygen-containing gas and a fluorocarbon-containing gas, and causing a top portion of the surface region to be converted into a layer of oxidized dielectric material using a chemical reaction in the plasma process environment.
- the semiconductor substrate includes a silicon-containing semiconductor layer in the surface region.
- the plasma process includes a process pressure in the range of about 100 ⁇ 10000 mTorr, an R.F. power in the range of about 500 ⁇ 5000 W, and a process temperature of about 150° C. to 550° C.
- the plasma process also includes an oxygen-containing gas at a flow rate in the range of about 300 ⁇ 20000 sccm, a forming gas at a flow rate of about 30 ⁇ 3000 sccm, and a fluorocarbon-containing gas at a flow of about 2 to 100 sccm.
- the method for forming a dielectric in a semiconductor device includes providing a silicon substrate which has a surface region.
- the method includes subjecting the silicon substrate to a plasma process, which includes a process pressure of about 1500 mTorr, an R.F. power of about 2500 W, and a process temperature in the range of about 150° C. ⁇ 550° C.
- the plasma process environment also includes oxygen gas at a flow rate of about 3000 sccm, forming gas at a flow rate of about 300 sccm, and CF 4 gas at a flow rate in the range of about 25 sccm.
- the method includes causing a top portion of the silicon substrate to be converted into a layer of oxidized dielectric material using a chemical reaction in the plasma process environment.
- a method for forming a dielectric including providing a substrate having a silicon-containing semiconductor layer, which has a surface region.
- the method includes subjecting the substrate to a plasma process which includes an oxygen-containing gas and a fluorocarbon-containing gas, and causing a top portion of the silicon-containing semiconductor layer to be converted into a layer of oxidized dielectric material using a chemical reaction in the plasma process environment.
- the plasma process is free from silicon-containing plasma source gases.
- the substrate is maintained at a temperature in a process temperature range of about 150° C.-550° C.
- the flow rate of the fluorocarbon-containing gas is used to control the thickness of the oxidized dielectric.
- the present invention provides a method for forming a semiconductor device.
- the method includes providing a silicon substrate of a first conductivity type, the substrate including a surface region.
- the method includes subjecting the substrate to a plasma process, which includes an oxygen-containing gas, a forming gas, and a fluorocarbon-containing gas.
- the method includes causing a top portion of the silicon substrate to be converted into a layer of oxidized dielectric material using a chemical reaction in the plasma process environment.
- the method also includes forming a gate structure overlying the dielectric material by depositing and patterning a conductive layer.
- the method also includes forming a source region and a drain region on either side of the gate structure, respectively. The source region and drain region are formed by converting a first portion and a second portion in the substrate to a second conductivity type.
- an apparatus for forming a dielectric layer includes a process chamber configured for disposing a substrate therein, a gas inlet for delivering a mixture gas to the process chamber, and an RF generator for producing a plasma from the mixture gas.
- the plasma includes an oxygen-containing element and a fluorocarbon-containing element.
- the apparatus also has a heating element configured for maintaining the chamber temperature at a desired process temperature, for example, at 800° C. or lower, and a connector to a vacuum pump for maintaining a process pressure.
- the apparatus is configured for using the plasma to convert a surface portion of the substrate into an oxidized dielectric material.
- the plasma further includes an element ionized from N 2 H 2 .
- the plasma also includes a hydrogen and nitrogen mixture with 2-6% hydrogen.
- the apparatus is configured for maintaining the chamber temperature in a range between 150-550° C.
- the apparatus is configured for maintaining the chamber temperature at about 250° C.
- the apparatus is configured for maintaining the chamber temperature below 250° C.
- the substrate includes a material selected from the group consisting of single crystalline silicon, polycrystalline silicon, amorphous silicon, silicon nitride (SiN), silicon germanium, and silicon oxynitride (SiON).
- the oxygen-containing element is generated from a gas selected from the group consisting of O 2 , O 3 , NO, H 2 O, and NO 2 .
- the fluorocarbon-containing element is generated from a gas selected from the group consisting of CF 4 , CHF 3 , CH 2 F 2 , and CH 3 F.
- the apparatus configured for selecting a CF 4 flow rate for adjusting a thickness associated with the oxidized dielectric material.
- the present technique provides an easy to use process that relies upon conventional technology.
- the method provides a method for low temperature oxidation of a semiconductor material, such as silicon.
- a method for forming silicon oxide includes oxidizing a silicon substrate in a low temperature plasma process, e.g. at 250° C. or below 250° C.
- a method is provided for controlling thickness and achieving desired thickness in the low temperature plasma process.
- the method provides a simple, low temperature, low thermal budget oxidation process that is compatible with conventional process technology without substantial modifications to conventional equipment and processes.
- FIG. 1 is a simplified view diagram of a plasma process apparatus for implementing a method for forming an oxidized dielectric according to an embodiment of the present invention
- FIG. 2 is a simplified flow diagram of a method for forming an oxidized dielectric according to an embodiment of the present invention
- FIGS. 3A-3C are simplified diagrams illustrating a method for forming an oxidized dielectric according to an embodiment of the present invention
- FIG. 4 is a simplified diagram illustrating oxide growth as a function of process gas and process time according to an embodiment of the present invention
- FIG. 5 is a simplified diagram illustrating oxide growth using CF 4 gas as a function of time according to an embodiment of the present invention
- FIG. 6 is a simplified diagram illustrating oxide growth as a function of CF 4 gas flow rate according to an embodiment of the present invention
- FIG. 7 is a transmission electron microscope (TEM) micrograph illustrating an oxide layer formed using a low temperature plasma oxidation process according to an embodiment of the present invention.
- FIGS. 8A-8C are simplified cross-sectional diagrams illustrating a method for forming a semiconductor device according to an embodiment of the present invention.
- the present invention is directed to semiconductor devices and their manufacture. More particularly, the invention provides a method and device for an oxidized dielectric in a semiconductor device. Merely by way of example, the invention has been applied to low temperature plasma oxidation of silicon for forming a gate dielectric in an MOS device. But it would be recognized that the invention has a much broader range of applicability. For example, the invention can be applied to other silicon devices such as bipolar devices or memory device, e.g. DRAM, Flash memory, MONOS, or other non-volatile memory devices.
- bipolar devices or memory device e.g. DRAM, Flash memory, MONOS, or other non-volatile memory devices.
- dielectrics In modern integrated circuit, thin dielectrics often form important components. For example, the quality of the gate dielectric in an MOS transistor or the tunneling dielectric in a memory device plays an important role in device performance and reliability. These dielectrics are often formed by thermal oxidation of silicon. As integrated circuits continue to be miniaturized, it is desirable to reduce the thermal budget of the process flow. Reducing the thermal budget, such as using a thermal oxidation process at a low temperature, often does not produce the required thickness. Alternatively dielectric formation techniques, such as chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD), may offer lower thermal budget, but often produce lower quality dielectrics.
- CVD chemical vapor deposition
- PECVD plasma enhanced chemical vapor deposition
- a silicon-containing precursor and an oxygen-containing precursor react to form silicon oxide which is deposited on the surface of the silicon substrate.
- the quality of the silicon oxide film and the interface between the deposition silicon oxide and the silicon substrate often do not meet the requirement for a transistor or a memory device. Accordingly there is need for a low-temperature oxidation process that can achieve the oxide thickness to meet device requirement.
- the present invention includes various features, which may be used. These features include the following:
- FIG. 1 is a simplified view diagram of a plasma process apparatus which may be used for implementing a method for forming an oxidized dielectric according to an embodiment of the present invention.
- plasma process apparatus 100 includes a process chamber 110 , connections to a vacuum pump 120 for maintaining a process pressure, and a gas inlet 140 for receiving plasma source gases.
- Process chamber 110 also includes a quartz tube 112 , in which a wafer 116 can be disposed on a susceptor 114 .
- a heating mechanism (not shown) is connected to the suspector for maintaining the wafer at a desired process temperature.
- An RF generator 130 supplies electrical power through RF cable 132 to the helical coils 134 for generating plasma inside the quartz tube.
- a buffer plate 142 is disposed adjacent to the gas inlet 140 to create a uniform flow of plasma source gases.
- plasma process apparatus 100 can generate reactive ions, charged and energetic particles, and may be used for plasma etching or plasma-assisted deposition.
- a plasma process can be specified by the process gas composition, gas flow, process pressure, RF power, and temperature, etc.
- a method for forming silicon oxide by performing a low temperature silicon oxidation in the plasma process apparatus 100 discussed above. Further details of the method are found throughout the present specification and more particularly below.
- FIG. 2 is a simplified flow diagram of a method for forming an oxidized dielectric according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown, the method for an oxidized dielectric according to an embodiment of the present invention can be briefly outlined below.
- the above sequence of processes provides a low temperature method for oxidizing a silicon substrate according to an embodiment of the present invention. As shown, the method uses a combination of steps including a way of introducing an oxygen-containing gas and a fluorocarbon-containing gas into a plasma process to oxidize a silicon substrate. Further details of the present method can be found throughout the present specification and more particularly below.
- FIGS. 3A through 3C are simplified cross-sectional view diagrams illustrating a method for forming an oxidized dielectric according to embodiments of the present invention. These diagrams are merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives.
- the processes illustrated in the flow diagram in FIG. 2 are now discussed with reference to the cross-sectional view diagrams in FIGS. 3A-3C .
- the method for forming an oxidized dielectric at low temperature begins at start, process 201 .
- a substrate is provided.
- substrate 300 includes a silicon-containing semiconductor layer 301 which has a surface region 302 .
- the silicon-containing layer 301 may be single crystalline silicon, polycrystalline silicon, amorphous silicon, silicon nitride (SiN), silicon germanium (SiGe), or silicon oxynitride (SiON).
- the silicon-containing layer may include a silicon-germanium layer.
- the silicon-containing layer may be doped or undoped.
- the silicon contain layer may be a top layer of a silicon, polysilicon, or amorphous silicon substrate.
- the silicon-containing layer may be the silicon device layer in an SOI structure or a polysilicon interconnect layer.
- the method includes subjecting the substrate to a plasma process.
- the plasma process includes an oxygen-containing gas and a fluorocarbon-containing gas.
- plasma process also includes forming gas, which is a mixture of hydrogen gas and nitrogen gas with the hydrogen gas accounting for about 2-6% of the forming gas.
- the oxygen-containing gas includes one or more of O 2 , O 3 , NO, H 2 O, and NO 2 .
- the fluorocarbon-containing gas includes one or more of CF 4 , CHF 3 , CH 2 F 2 , and CH 3 F.
- the substrate is maintained at a process temperature in the range of about 150° C. to 550° C.
- oxidizing the silicon substrate can be achieved while maintaining the substrate at a temperature of about 250° C.
- the substrate is maintained at a temperature below 800° C.
- the plasma process can be carried out in a relative wide range of process pressure.
- process pressure in a plasma chamber is maintained at a process in the range of 100 to 100000 mTorr. In a specific embodiment, the process pressure is maintained at approximately 1500 mTorr.
- the plasma process condition includes a process pressure in the range of about 100 ⁇ 10000 mTorr, an R.F. power in the range of about 500 ⁇ 5000 W, and a process temperature of about 150° C. to 550° C., the plasma process environment including oxygen gas at a flow rate in the range of about 300 ⁇ 20000 sccm, a forming gas at a flow rate of about 30 ⁇ 3000 sccm, a carbon fluorine-containing gas at a flow of about 2 to 100 sccm.
- the plasma process is conducted using a process pressure of about 1500 mTorr, a power of about 2500 W, and a process temperature in the range of about 250° C., the plasma process environment including oxygen gas at a flow rate of about 3000 sccm, a forming gas at a flow rate of about 300 sccm, a carbon fluorine-containing gas at a flow rate in the range of about 25 sccm.
- oxygen gas and CF 4 gas are used.
- the process temperature may be selected in a range of about 150° C. to 450° C.
- the plasma process causes a top portion 306 of the silicon-containing semiconductor layer to be converted into a layer of oxidized dielectric material in the plasma process (In process 230 ).
- the invention provides a method for forming oxide in a plasma process which is free from silicon-containing plasma source gas.
- the method provides oxidizing specifies in the plasma to oxidize the top portion 306 of the silicon-containing semiconductor layer in the substrate.
- an oxide layer 307 is formed overlying the unoxidized silicon-containing layer 305 . This is different from a conventional chemical vapor deposition (CVD) of oxide in which both silicon-containing species and oxygen-containing species are provided in a plasma environment to form silicon oxide that is deposited on the surface of the substrate.
- CVD chemical vapor deposition
- the above sequence of processes provides a low temperature method for oxidizing a silicon substrate according to an embodiment of the present invention.
- the method uses a combination of steps including a way of introducing an oxygen-containing gas and a fluorocarbon-containing gas into a plasma process to oxidize a silicon substrate.
- Other alternatives can also be provided where processes are added, one or more processes are removed, or one or more processes are provided in a different sequence without departing from the scope of the claims herein. Further details of the present method can be found throughout the present specification and more particularly below.
- silicon oxide can be obtained by oxidizing a silicon substrate at low temperature in a plasma process, and the oxide growth can be varied by selecting process conditions, such as process gas composition, gas flow rate, temperature, pressure, oxidation time, etc.
- process conditions such as process gas composition, gas flow rate, temperature, pressure, oxidation time, etc.
- FIG. 4 is a simplified diagram illustrating oxide growth as a function of process gas and process time according to an embodiment of the present invention.
- This diagram is merely an example, which should not unduly limit the scope of the claims herein.
- process pressure (1500 mTorr)
- R.F. power (2500 W)
- O 2 gas flow (3000 sccm)
- temperature 250° C.
- process pressure (1500 mTorr)
- process pressure (1500 mTorr
- R.F. power 2500 W
- O 2 gas flow 3000 sccm
- temperature 250° C.
- process gas compositions are used in each process.
- These three processes are listed below, including O 2 gas flow, forming gas (designated as N 2 H 2 ) flow, CF 4 (tetrafluoromethane) gas flow, and temperature.
- the gas flow rates are shown in sccm.
- process 3 included only O 2 gas and produced the least oxide growth, with about 10 A of oxide after 10 min of oxidation.
- Process 2 including O 2 gas at a flow rate of 3000 sccm and N 2 H 2 at 300 sccm produced thicker oxide, at about 20 A after 10 min.
- the plasma gas composition can be used to control oxide growth.
- the flow rate of the fluorocarbon-containing gas appears to significantly affect the growth rate of the oxidized dielectric.
- increasing CF 4 flow substantially enhances the growth of the oxidized dielectric.
- FIG. 5 is a simplified diagram illustrating oxide growth using CF 4 gas as a function of time according to an embodiment of the present invention.
- This diagram is merely an example, which should not unduly limit the scope of the claims herein.
- One of ordinary skill in the art would recognize other variations, modifications, and alternatives.
- FIG. 5 plots oxide thickness as a function of oxidation time using a CF 4 flow rate of 25 sccm.
- the other process conditions are process pressure (1500 mTorr), R.F. power (2500 W), O 2 gas flow (3000 sccm), forming gas flow (300 sccm), and temperature (250° C.). It can be seen that at a CF 4 flow rate of 25 sccm, the oxide growth reaches a thickness of about 90-100 ⁇ in about six minutes and does not increase substantially with longer process time.
- FIG. 6 is a simplified diagram illustrating oxide growth as a function of CF 4 gas flow rate according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown, the oxide thickness increases with higher CF 4 flow rate up to about 25 sccm. At flow rate higher than 25 sccm, the oxide growth appears to decrease with increased flow.
- FIG. 7 is a transmission electron microscope (TEM) micrograph illustrating an oxide layer formed in a low temperature plasma oxidation process according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown, FIG. 7 is a cross-sectional SEM micrograph showing uniform oxide of about 95 A form on the silicon substrate with a process condition of process pressure (1500 mTorr), R.F.
- FIGS. 8A-8C are simplified diagrams illustrating a method for forming a semiconductor device according to an embodiment of the present invention. These diagrams are merely examples, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives.
- the method includes providing a silicon substrate 801 , which includes a surface region not shown. In a specific example, the substrate may have an N-type conductivity. Of course it is recognized that the method applies to a P-type substrate as well.
- a gate oxide 803 layer is formed. In an embodiment, gate oxide layer 803 may be formed by a process described above in conjunction with FIGS. 3A-3C .
- the substrate is subject to a plasma process, which includes an oxygen-containing gas, a forming gas, and a fluorocarbon-containing gas.
- the plasma process causing a top portion of the surface region to be converted into a layer of oxidized dielectric material 803 using a chemical reaction in the plasma process environment.
- a gate structure 805 is formed overlying the dielectric material 803 by depositing and patterning a conductive layer.
- gate structure may be a doped polysilicon gate formed using deposition and patterning techniques.
- regions 807 and 809 in the substrate are converted to a second conductivity type, for example P-type, to form a source region and a drain region. As shown, the source region 807 and drain region 809 are located on either side of the gate structure, respectively.
- the source and drain regions may be formed using an ion implantation process.
- the present technique provides an easy to use process that relies upon conventional technology.
- the method provides a method for low temperature oxidation of a semiconductor material, such as silicon.
- a method for forming silicon oxide includes oxidizing a silicon substrate in a low temperature plasma process, e.g. at 250° C. or below 250° C.
- a method is provided for controlling thickness and achieving desired thickness in the low temperature plasma process.
- the method provides a simple, low temperature, low thermal budget oxidation process that is compatible with conventional process technology without substantial modifications to conventional equipment and processes.
Abstract
An apparatus for forming a dielectric layer includes a process chamber configured for disposing a substrate therein, a gas inlet for delivering a mixture gas to the process chamber, and an RF generator for producing a plasma from the mixture gas. The plasma includes an oxygen-containing element and a fluorocarbon-containing element. The apparatus also has a heating element configured for maintaining the chamber temperature at a desired process temperature, for example, at 800° C. or lower, and a connector to a vacuum pump for maintaining a process pressure. The apparatus is configured for using the plasma to convert a surface portion of the substrate into an oxidized dielectric material.
Description
- This application is a continued application of U.S. patent application Ser. No. 12/121,382, filed May 15, 2008, commonly owned and incorporated by reference in its entirety herein.
- The present invention is directed to integrated circuits and their processing for the manufacture of semiconductor devices. More particularly, the invention provides a method and device for an oxidized dielectric in a semiconductor device. Merely by way of example, the invention has been applied to low temperature plasma oxidation of silicon for forming a gate dielectric in an MOS device. But it would be recognized that the invention has a much broader range of applicability. For example, the invention can be applied to other silicon devices such as bipolar devices or memory device, e.g. DRAM, Flash memory, MONOS, or other non-volatile memory devices.
- Integrated circuits or “ICs” have evolved from a handful of interconnected devices fabricated on a single chip of silicon to millions of devices. In order to achieve improvements in complexity and circuit density, the size of the smallest device feature has become smaller with each generation of ICs. Increasing circuit density has not only improved the complexity and performance of ICs but has also provided lower cost parts to the consumer. On the other hand, making devices smaller is very challenging, as each process used in IC fabrication has a limit. That is to say, a given process typically only works down to a certain feature size, and then either the process or the device layout needs to be changed. An example of such a limit is dielectric films used for the manufacture of integrated circuits in a cost effective and efficient way.
- In modern integrated circuit, dielectric films often form important components. For example, thin gate dielectric in an MOS transistor and the tunneling dielectric in a memory device play important roles in device performance and reliability. Thick dielectrics are often used for device isolation, such as in shallow trench isolation or interlayer isolation. Conventionally, thick dielectric films are often formed using chemical vapor deposition (CVD), whereas thin dielectrics are formed by thermal oxidation of silicon. As device dimension becomes smaller, it becomes increasingly difficult to use conventional techniques for forming dielectrics to meet device requirements. These and other limitations are described throughout the present specification and more particularly below.
- From the above, it is seen that an improved technique for processing semiconductor devices is desired.
- The present invention is directed to semiconductor devices and their manufacture. More particularly, the invention provides a method for forming an oxidized dielectric in a semiconductor device. Merely by way of example, the invention has been applied to low temperature plasma oxidation of silicon for forming a gate dielectric in an MOS device. But it would be recognized that the invention has a much broader range of applicability. For example, the invention can be applied to other silicon devices such as bipolar devices or memory device, e.g. DRAM, Flash memory, MONOS, or other non-volatile memory devices.
- According to an embodiment of the present invention, a method for forming a dielectric includes providing a substrate having a silicon-containing semiconductor layer. A surface portion of the silicon-containing material is plasma oxidized to convert the surface portion into an oxidized dielectric material at a process temperature of about 800° C. or less, wherein the plasma oxidization process comprises an oxygen-containing element and a fluorocarbon-containing element. In an embodiment, the plasma process is free from silicon-containing plasma source gases. In a specific embodiment, the substrate is maintained at a temperature in a process temperature range of about 150° C.-550° C. In an embodiment, the flow rate of the fluorocarbon-containing gas is used to control the thickness of the oxidized dielectric.
- In a specific embodiment of the method, the plasma process also includes a forming gas (N2H2). In an example, the forming gas includes a mixture of hydrogen gas and nitrogen gas, with about 2-6% hydrogen gas. In an embodiment, the plasma process is free from silicon-containing plasma source gas, in contrast to conventional plasma CVD oxide process which requires a silicon-containing precursor in the plasma source gas. Depending on the embodiment, the silicon-containing semiconductor layer may include single crystalline silicon, polycrystalline silicon, amorphous silicon, doped silicon, or other silicon-containing semiconductor material. In another example, the silicon-containing semiconductor layer may include a silicon layer or a silicon germanium layer.
- In an embodiment of the method, the oxygen-containing gas is selected from the group consisting of O2, O3, NO, and NO2, whereas the fluorocarbon-containing gas is selected from the group consisting of CF4, CHF3, CH2F2, and CH3F. In a specific embodiment, a thickness associated with the oxidized dielectric can be adjusted by selecting a CF4 flow rate. In an embodiment, the substrate is maintained at a process temperature in the range of about 150° C. to 450° C. In specific embodiment, in the plasma process the substrate is maintained at a temperature of about 250° C. In an embodiment, a plasma process includes a process pressure in a plasma chamber in the range of about 100˜10000 mTorr.
- A specific process condition for the plasma process includes a process pressure of about 1500 mTorr, an R.F. power of about 2500 W, a process temperature of about 250° C., oxygen gas at a flow rate of about 3000 sccm, a forming gas at a flow rate of about 300 sccm, and a carbon fluorine-containing gas at a flow rate in the range of about 25 sccm. In another specific process, the plasma process includes a process pressure in the range of about 100˜10000 mTorr, an R.F. power in the range of about 500˜5000 W, and a process temperature of about 150° C.-550° C., oxygen gas at a flow rate in the range of about 300˜20000 sccm, a forming gas at a flow rate of about 30˜3000 sccm, and a carbon fluorine-containing gas at a flow of about 2 to 100 sccm.
- In another embodiment, the present invention provides method for forming a dielectric in a semiconductor device. The method includes providing a semiconductor substrate which includes a surface region. The method includes subjecting the substrate to a plasma process which includes an oxygen-containing gas and a fluorocarbon-containing gas, and causing a top portion of the surface region to be converted into a layer of oxidized dielectric material using a chemical reaction in the plasma process environment. In a specific embodiment, the semiconductor substrate includes a silicon-containing semiconductor layer in the surface region. In an embodiment, the plasma process includes a process pressure in the range of about 100˜10000 mTorr, an R.F. power in the range of about 500˜5000 W, and a process temperature of about 150° C. to 550° C. The plasma process also includes an oxygen-containing gas at a flow rate in the range of about 300˜20000 sccm, a forming gas at a flow rate of about 30˜3000 sccm, and a fluorocarbon-containing gas at a flow of about 2 to 100 sccm.
- In a specific embodiment, the method for forming a dielectric in a semiconductor device includes providing a silicon substrate which has a surface region. The method includes subjecting the silicon substrate to a plasma process, which includes a process pressure of about 1500 mTorr, an R.F. power of about 2500 W, and a process temperature in the range of about 150° C.˜550° C. The plasma process environment also includes oxygen gas at a flow rate of about 3000 sccm, forming gas at a flow rate of about 300 sccm, and CF4 gas at a flow rate in the range of about 25 sccm. The method includes causing a top portion of the silicon substrate to be converted into a layer of oxidized dielectric material using a chemical reaction in the plasma process environment.
- According to yet another embodiment of the present invention, a method is provided for forming a dielectric, including providing a substrate having a silicon-containing semiconductor layer, which has a surface region. The method includes subjecting the substrate to a plasma process which includes an oxygen-containing gas and a fluorocarbon-containing gas, and causing a top portion of the silicon-containing semiconductor layer to be converted into a layer of oxidized dielectric material using a chemical reaction in the plasma process environment. In an embodiment, the plasma process is free from silicon-containing plasma source gases. In a specific embodiment, the substrate is maintained at a temperature in a process temperature range of about 150° C.-550° C. In an embodiment, the flow rate of the fluorocarbon-containing gas is used to control the thickness of the oxidized dielectric.
- According to an alternative embodiment, the present invention provides a method for forming a semiconductor device. The method includes providing a silicon substrate of a first conductivity type, the substrate including a surface region. The method includes subjecting the substrate to a plasma process, which includes an oxygen-containing gas, a forming gas, and a fluorocarbon-containing gas. The method includes causing a top portion of the silicon substrate to be converted into a layer of oxidized dielectric material using a chemical reaction in the plasma process environment. The method also includes forming a gate structure overlying the dielectric material by depositing and patterning a conductive layer. The method also includes forming a source region and a drain region on either side of the gate structure, respectively. The source region and drain region are formed by converting a first portion and a second portion in the substrate to a second conductivity type.
- According to yet another embodiment of the present invention, an apparatus for forming a dielectric layer includes a process chamber configured for disposing a substrate therein, a gas inlet for delivering a mixture gas to the process chamber, and an RF generator for producing a plasma from the mixture gas. The plasma includes an oxygen-containing element and a fluorocarbon-containing element. The apparatus also has a heating element configured for maintaining the chamber temperature at a desired process temperature, for example, at 800° C. or lower, and a connector to a vacuum pump for maintaining a process pressure. The apparatus is configured for using the plasma to convert a surface portion of the substrate into an oxidized dielectric material.
- In a specific embodiment of the apparatus, the plasma further includes an element ionized from N2H2. In another embodiment, the plasma also includes a hydrogen and nitrogen mixture with 2-6% hydrogen. In an embodiment, the apparatus is configured for maintaining the chamber temperature in a range between 150-550° C. In another embodiment, the apparatus is configured for maintaining the chamber temperature at about 250° C. In yet another embodiment, the apparatus is configured for maintaining the chamber temperature below 250° C. In an embodiment, the substrate includes a material selected from the group consisting of single crystalline silicon, polycrystalline silicon, amorphous silicon, silicon nitride (SiN), silicon germanium, and silicon oxynitride (SiON). In another embodiment, the oxygen-containing element is generated from a gas selected from the group consisting of O2, O3, NO, H2O, and NO2. In an embodiment, the fluorocarbon-containing element is generated from a gas selected from the group consisting of CF4, CHF3, CH2F2, and CH3F. In yet another embodiment, the apparatus id configured for selecting a CF4 flow rate for adjusting a thickness associated with the oxidized dielectric material.
- Many benefits are achieved by way of the present invention over conventional techniques. For example, the present technique provides an easy to use process that relies upon conventional technology. In some embodiments, the method provides a method for low temperature oxidation of a semiconductor material, such as silicon. For example, in a specific embodiment, a method for forming silicon oxide includes oxidizing a silicon substrate in a low temperature plasma process, e.g. at 250° C. or below 250° C. In an embodiment, a method is provided for controlling thickness and achieving desired thickness in the low temperature plasma process. Additionally, the method provides a simple, low temperature, low thermal budget oxidation process that is compatible with conventional process technology without substantial modifications to conventional equipment and processes. These and other benefits will be described in more detail throughout the present specification and more particularly below.
- Various additional objects, features and advantages of the present invention can be more fully appreciated with reference to the detailed description and accompanying drawings that follow.
-
FIG. 1 is a simplified view diagram of a plasma process apparatus for implementing a method for forming an oxidized dielectric according to an embodiment of the present invention; -
FIG. 2 is a simplified flow diagram of a method for forming an oxidized dielectric according to an embodiment of the present invention; -
FIGS. 3A-3C are simplified diagrams illustrating a method for forming an oxidized dielectric according to an embodiment of the present invention; -
FIG. 4 is a simplified diagram illustrating oxide growth as a function of process gas and process time according to an embodiment of the present invention; -
FIG. 5 is a simplified diagram illustrating oxide growth using CF4 gas as a function of time according to an embodiment of the present invention; -
FIG. 6 is a simplified diagram illustrating oxide growth as a function of CF4 gas flow rate according to an embodiment of the present invention; -
FIG. 7 is a transmission electron microscope (TEM) micrograph illustrating an oxide layer formed using a low temperature plasma oxidation process according to an embodiment of the present invention; and -
FIGS. 8A-8C are simplified cross-sectional diagrams illustrating a method for forming a semiconductor device according to an embodiment of the present invention. - The present invention is directed to semiconductor devices and their manufacture. More particularly, the invention provides a method and device for an oxidized dielectric in a semiconductor device. Merely by way of example, the invention has been applied to low temperature plasma oxidation of silicon for forming a gate dielectric in an MOS device. But it would be recognized that the invention has a much broader range of applicability. For example, the invention can be applied to other silicon devices such as bipolar devices or memory device, e.g. DRAM, Flash memory, MONOS, or other non-volatile memory devices.
- In modern integrated circuit, thin dielectrics often form important components. For example, the quality of the gate dielectric in an MOS transistor or the tunneling dielectric in a memory device plays an important role in device performance and reliability. These dielectrics are often formed by thermal oxidation of silicon. As integrated circuits continue to be miniaturized, it is desirable to reduce the thermal budget of the process flow. Reducing the thermal budget, such as using a thermal oxidation process at a low temperature, often does not produce the required thickness. Alternatively dielectric formation techniques, such as chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD), may offer lower thermal budget, but often produce lower quality dielectrics. In a typical CVD or PECVD process, a silicon-containing precursor and an oxygen-containing precursor react to form silicon oxide which is deposited on the surface of the silicon substrate. In such a process, the quality of the silicon oxide film and the interface between the deposition silicon oxide and the silicon substrate often do not meet the requirement for a transistor or a memory device. Accordingly there is need for a low-temperature oxidation process that can achieve the oxide thickness to meet device requirement.
- Depending upon the embodiment, the present invention includes various features, which may be used. These features include the following:
-
- 1. A method for low temperature oxidation of a semiconductor material, such as silicon;
- 2. A method for forming silicon oxide by oxidizing a silicon substrate in a low temperature plasma process, e.g. at about 250° C.;
- 3. A method for controlling thickness and achieving desired thickness in the low temperature plasma process; and
- 4. A simple, low temperature, low thermal budget oxidation method using a process that is compatible with conventional process technology without substantial modifications to conventional equipment and processes.
- As shown, the above features may be in one or more of the embodiments to follow. These features are merely examples, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize many variations, modifications, and alternatives.
-
FIG. 1 is a simplified view diagram of a plasma process apparatus which may be used for implementing a method for forming an oxidized dielectric according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown,plasma process apparatus 100 includes aprocess chamber 110, connections to avacuum pump 120 for maintaining a process pressure, and agas inlet 140 for receiving plasma source gases.Process chamber 110 also includes aquartz tube 112, in which awafer 116 can be disposed on asusceptor 114. A heating mechanism (not shown) is connected to the suspector for maintaining the wafer at a desired process temperature. AnRF generator 130 supplies electrical power throughRF cable 132 to thehelical coils 134 for generating plasma inside the quartz tube. Abuffer plate 142 is disposed adjacent to thegas inlet 140 to create a uniform flow of plasma source gases. - Although the above has been shown using a selected group of components for the
plasma process apparatus 100, there can be many alternatives, modifications, and variations. For example, some of the components may be expanded and/or combined. Other components may be inserted to those noted above. Depending upon the embodiment, the arrangement of components may be interchanged with others replaced. Depending on the process condition,plasma process apparatus 100 can generate reactive ions, charged and energetic particles, and may be used for plasma etching or plasma-assisted deposition. Generally, a plasma process can be specified by the process gas composition, gas flow, process pressure, RF power, and temperature, etc. - According to a specific embodiment of the present invention, a method is provided for forming silicon oxide by performing a low temperature silicon oxidation in the
plasma process apparatus 100 discussed above. Further details of the method are found throughout the present specification and more particularly below. -
FIG. 2 is a simplified flow diagram of a method for forming an oxidized dielectric according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown, the method for an oxidized dielectric according to an embodiment of the present invention can be briefly outlined below. -
- 1. (Process 210) Provide a substrate having a silicon-containing semiconductor layer;
- 2. (Process 220) Subject the substrate to a plasma process, the plasma process including an oxygen-containing gas and a fluorocarbon-containing gas; and
- 3. (Process 230) Cause a top portion of the silicon-containing semiconductor layer to be converted into a layer of oxidized dielectric material.
- The above sequence of processes provides a low temperature method for oxidizing a silicon substrate according to an embodiment of the present invention. As shown, the method uses a combination of steps including a way of introducing an oxygen-containing gas and a fluorocarbon-containing gas into a plasma process to oxidize a silicon substrate. Further details of the present method can be found throughout the present specification and more particularly below.
-
FIGS. 3A through 3C are simplified cross-sectional view diagrams illustrating a method for forming an oxidized dielectric according to embodiments of the present invention. These diagrams are merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. The processes illustrated in the flow diagram inFIG. 2 are now discussed with reference to the cross-sectional view diagrams inFIGS. 3A-3C . As shown, the method for forming an oxidized dielectric at low temperature begins at start, process 201. InProcess 210, a substrate is provided. As shown inFIG. 3A ,substrate 300 includes a silicon-containingsemiconductor layer 301 which has asurface region 302. In an embodiment, the silicon-containinglayer 301 may be single crystalline silicon, polycrystalline silicon, amorphous silicon, silicon nitride (SiN), silicon germanium (SiGe), or silicon oxynitride (SiON). In some embodiments, the silicon-containing layer may include a silicon-germanium layer. The silicon-containing layer may be doped or undoped. For example, the silicon contain layer may be a top layer of a silicon, polysilicon, or amorphous silicon substrate. In another example, the silicon-containing layer may be the silicon device layer in an SOI structure or a polysilicon interconnect layer. - In
process 220, the method includes subjecting the substrate to a plasma process. In an embodiment, the plasma process includes an oxygen-containing gas and a fluorocarbon-containing gas. In a specific embodiment, plasma process also includes forming gas, which is a mixture of hydrogen gas and nitrogen gas with the hydrogen gas accounting for about 2-6% of the forming gas. In an embodiment, the oxygen-containing gas includes one or more of O2, O3, NO, H2O, and NO2. In some embodiments, the fluorocarbon-containing gas includes one or more of CF4, CHF3, CH2F2, and CH3F. - In some embodiments, during the plasma process the substrate is maintained at a process temperature in the range of about 150° C. to 550° C. In a specific embodiment, oxidizing the silicon substrate can be achieved while maintaining the substrate at a temperature of about 250° C. In alternative embodiment, the substrate is maintained at a temperature below 800° C. The plasma process can be carried out in a relative wide range of process pressure. For example, in certain embodiments, process pressure in a plasma chamber is maintained at a process in the range of 100 to 100000 mTorr. In a specific embodiment, the process pressure is maintained at approximately 1500 mTorr.
- In some embodiments, the plasma process condition includes a process pressure in the range of about 100˜10000 mTorr, an R.F. power in the range of about 500˜5000 W, and a process temperature of about 150° C. to 550° C., the plasma process environment including oxygen gas at a flow rate in the range of about 300˜20000 sccm, a forming gas at a flow rate of about 30˜3000 sccm, a carbon fluorine-containing gas at a flow of about 2 to 100 sccm. In a specific embodiment, the plasma process is conducted using a process pressure of about 1500 mTorr, a power of about 2500 W, and a process temperature in the range of about 250° C., the plasma process environment including oxygen gas at a flow rate of about 3000 sccm, a forming gas at a flow rate of about 300 sccm, a carbon fluorine-containing gas at a flow rate in the range of about 25 sccm. In some examples of the above processes, oxygen gas and CF4 gas are used. Of course, there can be many variations, modifications, and alternatives. In some embodiments, the process temperature may be selected in a range of about 150° C. to 450° C.
- In
FIG. 3B , the plasma process causes atop portion 306 of the silicon-containing semiconductor layer to be converted into a layer of oxidized dielectric material in the plasma process (In process 230). According to an embodiment, the invention provides a method for forming oxide in a plasma process which is free from silicon-containing plasma source gas. The method provides oxidizing specifies in the plasma to oxidize thetop portion 306 of the silicon-containing semiconductor layer in the substrate. InFIG. 3C , anoxide layer 307 is formed overlying the unoxidized silicon-containinglayer 305. This is different from a conventional chemical vapor deposition (CVD) of oxide in which both silicon-containing species and oxygen-containing species are provided in a plasma environment to form silicon oxide that is deposited on the surface of the substrate. - The above sequence of processes provides a low temperature method for oxidizing a silicon substrate according to an embodiment of the present invention. As shown, the method uses a combination of steps including a way of introducing an oxygen-containing gas and a fluorocarbon-containing gas into a plasma process to oxidize a silicon substrate. Other alternatives can also be provided where processes are added, one or more processes are removed, or one or more processes are provided in a different sequence without departing from the scope of the claims herein. Further details of the present method can be found throughout the present specification and more particularly below.
- According to embodiments of the present invention, silicon oxide can be obtained by oxidizing a silicon substrate at low temperature in a plasma process, and the oxide growth can be varied by selecting process conditions, such as process gas composition, gas flow rate, temperature, pressure, oxidation time, etc. In order to demonstrate the methods provided in the present invention, we have conducted experimental studies to investigate low temperature plasma oxide growth on silicon substrate. In these studies, we have examined oxide growth as functions of oxidation time, plasma gas sources, and gas flow rate, etc. Some of the results are presented below.
-
FIG. 4 is a simplified diagram illustrating oxide growth as a function of process gas and process time according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown, the thickness of oxide formed on a silicon substrate under three different process conditions are plotted as functions of time. It is noted that process pressure (1500 mTorr), R.F. power (2500 W), O2 gas flow (3000 sccm), and temperature (250° C.) are held constant in all three processes, whereas different process gas compositions are used in each process. These three processes are listed below, including O2 gas flow, forming gas (designated as N2H2) flow, CF4 (tetrafluoromethane) gas flow, and temperature. The gas flow rates are shown in sccm. -
- 1. CF4/N2H2/O2: /3000 O2/300 N2H2/15 CF4/
- 2. N2H2/O2:/3000 O2/300 N2H2/0 CF4/
- 3. O2: /3000 O2/0 N2H2/0 CF4/
- It can be seen that
process 3 included only O2 gas and produced the least oxide growth, with about 10 A of oxide after 10 min of oxidation.Process 2, including O2 gas at a flow rate of 3000 sccm and N2H2 at 300 sccm produced thicker oxide, at about 20 A after 10 min. In comparison,Process 1, including CF4 at a flow rate of 15 sccm, N2H2 at 300 sccm, and O2 gas, produced substantially thicker oxide, at about 95 A after 10 min of oxidation. Thus according to a specific embodiment of the invention, in low temperature plasma oxidation, the plasma gas composition can be used to control oxide growth. According to our experimental data, the flow rate of the fluorocarbon-containing gas appears to significantly affect the growth rate of the oxidized dielectric. In particular, increasing CF4 flow substantially enhances the growth of the oxidized dielectric. -
FIG. 5 is a simplified diagram illustrating oxide growth using CF4 gas as a function of time according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shownFIG. 5 plots oxide thickness as a function of oxidation time using a CF4 flow rate of 25 sccm. The other process conditions are process pressure (1500 mTorr), R.F. power (2500 W), O2 gas flow (3000 sccm), forming gas flow (300 sccm), and temperature (250° C.). It can be seen that at a CF4 flow rate of 25 sccm, the oxide growth reaches a thickness of about 90-100 Å in about six minutes and does not increase substantially with longer process time. -
FIG. 6 is a simplified diagram illustrating oxide growth as a function of CF4 gas flow rate according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown, the oxide thickness increases with higher CF4 flow rate up to about 25 sccm. At flow rate higher than 25 sccm, the oxide growth appears to decrease with increased flow. -
FIG. 7 is a transmission electron microscope (TEM) micrograph illustrating an oxide layer formed in a low temperature plasma oxidation process according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown,FIG. 7 is a cross-sectional SEM micrograph showing uniform oxide of about 95 A form on the silicon substrate with a process condition of process pressure (1500 mTorr), R.F. power (2500 W), O2 gas flow (3000 sccm), temperature (250° C.), O2 gas at a flow rate of 3000 sccm, forming gas at 300 sccm, and CF4 at a flow rate of 15 sccm. -
FIGS. 8A-8C are simplified diagrams illustrating a method for forming a semiconductor device according to an embodiment of the present invention. These diagrams are merely examples, which should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown inFIG. 8A , the method includes providing asilicon substrate 801, which includes a surface region not shown. In a specific example, the substrate may have an N-type conductivity. Of course it is recognized that the method applies to a P-type substrate as well. As shown, agate oxide 803 layer is formed. In an embodiment,gate oxide layer 803 may be formed by a process described above in conjunction withFIGS. 3A-3C . For example, the substrate is subject to a plasma process, which includes an oxygen-containing gas, a forming gas, and a fluorocarbon-containing gas. The plasma process causing a top portion of the surface region to be converted into a layer of oxidizeddielectric material 803 using a chemical reaction in the plasma process environment. - In
FIG. 8B , agate structure 805 is formed overlying thedielectric material 803 by depositing and patterning a conductive layer. In an example, gate structure may be a doped polysilicon gate formed using deposition and patterning techniques. InFIG. 8C ,regions source region 807 and drainregion 809 are located on either side of the gate structure, respectively. In a specific embodiment, the source and drain regions may be formed using an ion implantation process. - Many benefits are achieved by way of the present invention over conventional techniques. For example, the present technique provides an easy to use process that relies upon conventional technology. In some embodiments, the method provides a method for low temperature oxidation of a semiconductor material, such as silicon. For example, in a specific embodiment, a method for forming silicon oxide includes oxidizing a silicon substrate in a low temperature plasma process, e.g. at 250° C. or below 250° C. In an embodiment, a method is provided for controlling thickness and achieving desired thickness in the low temperature plasma process. Additionally, the method provides a simple, low temperature, low thermal budget oxidation process that is compatible with conventional process technology without substantial modifications to conventional equipment and processes.
- While the preferred embodiments of the invention have been illustrated and described, it will be clear that the invention is not limited to these embodiments only. Numerous modifications, changes, variations, substitutions and equivalents will be apparent to those skilled in the art without departing from the spirit and scope of the invention as described in the claims.
Claims (20)
1. An apparatus for forming a dielectric layer, the apparatus comprising:
a process chamber configured for disposing a substrate therein;
a gas inlet for delivering a mixture gas to the process chamber;
an RF generator for producing a plasma from the mixture gas, said plasma comprising an oxygen-containing element and a fluorocarbon-containing element;
a heating element configured for maintaining the chamber temperature at 800° C. or lower; and
a connector to a vacuum pump for maintaining a process pressure,
wherein the apparatus is configured to convert a surface portion of the substrate into an oxidized dielectric material.
2. The apparatus of claim 1 wherein the plasma further comprises an element ionized from N2H2.
3. The apparatus of claim 1 wherein the plasma further comprises a hydrogen and nitrogen mixture with 2-6% hydrogen.
4. The apparatus of claim 1 further configured for maintaining the chamber temperature in a range between 150-550° C.
5. The apparatus of claim 1 further configured for maintaining the chamber temperature at about 250° C.
6. The apparatus of claim 1 further configured for maintaining the chamber temperature below 250° C.
7. The apparatus of claim 1 wherein the substrate comprises a material selected from the group consisting of single crystalline silicon, polycrystalline silicon, amorphous silicon, silicon nitride (SiN), silicon germanium, and silicon oxynitride (SiON).
8. The apparatus of claim 1 wherein the oxygen-containing element is generated from a gas selected from the group consisting of O2, O3, NO, H2O, and NO2.
9. The apparatus of claim 1 wherein the fluorocarbon-containing element is generated from a gas selected from the group consisting of CF4, CHF3, CH2F2, and CH3F.
10. The apparatus of claim 1 further configured for selecting a CF4 flow rate for adjusting a thickness associated with the oxidized dielectric material.
11. The apparatus of claim 1 further configured to provide a process condition comprising a process pressure in the range of about 100˜10,000 mTorr, an R.F. power in the range of about 500˜5,000 W, oxygen gas at a flow rate in the range of about 300˜20,000 sccm, a forming gas at a flow rate of about 30˜3,000 sccm, and a carbon and fluorine-containing gas at a flow of about 2 to 100 sccm.
12. The apparatus of claim 1 further configured to provide a process condition comprising a process pressure of about 1,500 mTorr, an R. F. power of about 2,500 W, an oxygen gas at a flow rate of about 3,000 sccm, a forming gas at a flow rate of about 300 sccm, and a carbon and fluorine-containing gas at a flow rate of about 25 sccm.
13. An apparatus for forming a dielectric layer, the apparatus comprising:
a process chamber configured for disposing a substrate therein;
a gas inlet for delivering a mixture gas to the process chamber;
an RF generator for producing a plasma from the mixture gas, said plasma comprising an oxygen-containing element and a fluorocarbon-containing element;
a heating element configured for maintaining a process temperature; and
a connector to a vacuum pump for maintaining a process pressure,
wherein the apparatus is configured for oxidizing a surface portion of a silicon-containing material by using the plasma to convert the surface portion into an oxidized dielectric material,
wherein the plasma oxidation process being free from a silicon-containing plasma source gas.
14. The apparatus of claim 13 wherein the plasma further comprises an element ionized from N2H2.
15. The apparatus of claim 13 wherein the plasma further comprises a hydrogen and nitrogen mixture with 2-6% hydrogen.
16. The apparatus of claim 13 further configured for maintaining the chamber temperature in a range between 150-550° C.
17. The apparatus of claim 13 wherein the substrate comprises a material selected from the group consisting of single crystalline silicon, polycrystalline silicon, amorphous silicon, silicon nitride (SiN), silicon germanium, and silicon oxynitride (SiON).
18. The m apparatus of claim 13 wherein in the oxygen-containing element is generated from a gas elected from the group consisting of O2, O3, NO, H2O, and NO2.
19. The apparatus of claim 13 wherein the fluorocarbon-containing element is generated from a gas selected from the group consisting of CF4, CHF3, CH2F2, and CH3F.
20. The apparatus of claim 13 further configured for selecting a CF4 flow rate for adjusting a thickness associated with the oxidized dielectric material.
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US12/121,382 US7723240B2 (en) | 2008-05-15 | 2008-05-15 | Methods of low temperature oxidation |
US12/769,445 US20100206230A1 (en) | 2008-05-15 | 2010-04-28 | Methods of low temperature oxidation |
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US7723240B2 (en) * | 2008-05-15 | 2010-05-25 | Macronix International Co., Ltd. | Methods of low temperature oxidation |
DE102018122979B4 (en) * | 2018-06-13 | 2023-11-02 | Infineon Technologies Ag | METHOD FOR FORMING A SILICON INSULATOR LAYER AND SEMICONDUCTOR DEVICE THEREFOR |
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US20090286364A1 (en) | 2009-11-19 |
US7723240B2 (en) | 2010-05-25 |
CN101625975A (en) | 2010-01-13 |
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