US20100159710A1 - Semiconductor manufacturing apparatus, liquid container, and semiconductor device manufacturing method - Google Patents
Semiconductor manufacturing apparatus, liquid container, and semiconductor device manufacturing method Download PDFInfo
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- US20100159710A1 US20100159710A1 US12/659,071 US65907110A US2010159710A1 US 20100159710 A1 US20100159710 A1 US 20100159710A1 US 65907110 A US65907110 A US 65907110A US 2010159710 A1 US2010159710 A1 US 2010159710A1
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- liquid
- supply tube
- psz
- container
- coating liquid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B9/00—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour
- B05B9/03—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material
- B05B9/04—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material with pressurised or compressible container; with pump
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B9/00—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour
- B05B9/03—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material
- B05B9/04—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material with pressurised or compressible container; with pump
- B05B9/047—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material with pressurised or compressible container; with pump supply being effected by follower in container, e.g. membrane or floating piston, or by deformation of container
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
Definitions
- a semiconductor device such as a NAND flash memory is required to bury a silicon oxide film in a trench having a high aspect ratio so as to form deep STI (shallow trench isolation) in a narrow region.
- deep STI shallow trench isolation
- a film formation technique for using both an HDP (high density plasma) film and an SOG (spin on glass) film has been developed (see Japanese Patent No. 3178412).
- a silicon oxide film is deposited by HDP-CVD (chemical vapor deposition), and a film coated with a perhydropolysilazane liquid (hereinafter,“PSZ (Polysilazane)”) is coated on the silicon oxide film by spin coating.
- PSZ Polysilazane
- FIG. 14 is a conceptual view showing a conventional SOG step.
- a bottled PSZ liquid filled with nitrogen is commercially available.
- the air never fails to enter the bottles.
- the air may possibly enter a PSZ liquid supply nozzle from a tip end of the PSZ liquid supply nozzle. If so, the PSZ liquid unavoidably contacts with the air.
- a semiconductor manufacturing apparatus which airtightly transports a liquid to be coated on a substrate from a container to a discharge portion and suppresses the liquid from coming in contact with the air when the container is replaced by another one, has been desired.
- a semiconductor manufacturing apparatus comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube supplying an inert gas into a liquid container that contains the coating liquid, and pressurizing an interior of the liquid container; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and a solvent supply tube supplying a solvent, which can dissolve the coating liquid, to the first connecting portion.
- a semiconductor manufacturing apparatus comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube supplying an inert gas into a liquid container that contains the coating liquid, and pressurizing an interior of the liquid container; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and a liquid bath including the solvent capable of dissolving the coating liquid,
- first connecting portion and the second connecting portion are present in the liquid bath.
- a liquid container according to an embodiment of the present invention which contains a coating liquid and which is undesirable to expose to the atmosphere before utilizing for semiconductor manufacturing, the liquid container being attachable to or detachable from a semiconductor manufacturing apparatus, wherein
- the liquid container seals a coating liquid and a protection liquid, which is lower specific gravity than that of the coating liquid and does not react with the coating liquid, in a pressurized atmosphere with an inert gas higher than the atmospheric pressure.
- a semiconductor manufacturing method using a semiconductor manufacturing apparatus comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube pressurizing an interior of the liquid container with an inert gas; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and an exhaust tube capable of reducing an internal pressure of the coating liquid supply tube including the first connecting portion:
- FIG. 1 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container according to a first embodiment of the present invention
- FIG. 2 shows a PSZ container 20
- FIG. 3 shows an operation for detaching the PSZ container 20 ;
- FIG. 4 is a flowchart that shows a flow of an operation for detaching the PSZ container 20 ;
- FIG. 5 is a flowchart that shows a flow of an operation for attaching the PSZ container 20 ;
- FIG. 6 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container according to a second embodiment of the present invention.
- FIG. 7 is a cross-sectional view of a PSZ container according to the second embodiment.
- FIG. 8 is a cross-sectional view of a PSZ container according to the second embodiment.
- FIG. 9 is a cross-sectional view of a PSZ container according to a third embodiment of the present invention.
- FIG. 10 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container according to a fourth embodiment of the present invention.
- FIG. 11 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container according to a fifth embodiment of the present invention.
- FIG. 12 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container according to a sixth embodiment of the present invention.
- FIG. 13 is a table that shows effects of the respective embodiments of the present invention.
- FIG. 14 is a schematic diagram showing a conventional SOG step.
- FIG. 1 is a schematic diagram of a semiconductor manufacturing apparatus 10 and a PSZ container 20 according to a first embodiment of the present invention.
- the semiconductor manufacturing apparatus 10 is an apparatus for dropping a PSZ liquid from a discharge nozzle onto a semiconductor substrate, and spreading the PSZ liquid on the semiconductor substrate by spin coating at an SOG step.
- the semiconductor manufacturing apparatus 10 includes a coating liquid discharge portion (not shown), a PSZ supply tube 12 serving as a coating liquid supply tube, a dibutyl ether supply tube (hereinafter, “DBE supply tube”) 15 serving as a solvent supply tube, a helium supply tube (hereinafter, “He supply tube”) 16 serving as a gas supply tube, an exhaust tube 17 , and branch tubes 13 and 14 . Since the discharge portion may be identical to the discharge nozzle shown in FIG. 14 , it is not shown in FIG. 1 .
- the semiconductor manufacturing apparatus 10 also includes a connector C 1 a serving as a first connecting portion and a connector C 2 a serving as a second connecting portion.
- the PSZ supply tube 12 is connected to the connector C 1 a through a valve 102 .
- One end of the branch tube 13 is connected to the PSZ supply tube 12 between the valve 102 and the connector C 1 a through a valve 103 .
- the other end of the branch tube 13 is connected to one end of the branch tube 14 through a valve 104 , and also connected to the DBE supply tube 15 through a valve 105 .
- the He supply tube 16 is connected to the connector C 2 a through a valve 106 .
- the other end of the branch tube 14 is connected to the He supply tube 16 between the valve 106 and the connector C 2 a, and the exhaust tube 17 is connected to the He supply tube 16 through a valve 107 .
- a vacuum pomp e.g., a turbomolecular pump, not shown, is connected to the exhaust pipe 17 .
- the PSZ container. 20 includes a pair of connectors C 1 b and C 2 b connectable to the connectors C 1 a and C 2 a of the semiconductor manufacturing apparatus 10 , respectively.
- the PSZ container 20 can be thereby attached to or detached from the PSZ supply tube 12 and the He supply tube 16 .
- the PSZ container 20 also includes a PSZ outlet tube 21 provided from the connector C 1 b to neighborhoods of a bottom of the container 20 , and a He inlet tube 22 provided from the connector C 2 b to neighborhoods of an upper surface of the container 20 .
- Valves 101 and 100 are provided at the PSZ outlet tube 21 near the connector C 1 b and the He inlet tube 22 near the connector C 2 b, respectively, whereby an interior of the PSZ container 20 is shut off from the atmosphere.
- the PSZ container 20 is withdrawn in a sealed state after usage and recyclable by filling a PSZ liquid again into the container 20 .
- An inert gas as well as the PSZ liquid is filled into the PSZ container 20 with the, inert gas pressurized at a slightly higher pressure than an atmospheric pressure. By doing so, the air is not mixed into the PSZ container 20 .
- the PSZ liquid is contained in the PSZ container 20 up to a portion near the valve 100 but contained so as not to reach the valve 100 . It is thereby possible to prevent air bubbles from being generated in the PSZ liquid.
- the PSZ liquid is contained in the PSZ container 20 in a state, for example, in which the PSZ liquid is dissolved into a solvent such as dibutyl ether (hereinafter, “DBE”).
- DBE dibutyl ether
- the inert gas filled into the PSZ container 20 is preferably the same as the inert gas, i.e., helium gas supplied to the semiconductor manufacturing apparatus 10 for the following reasons.
- the helium possesses a property that it is insoluble with an organic solvent such as the PSZ or DBE, and the helium is less expensive than the other inert gas such as xenon.
- the PSZ container 20 and the semiconductor manufacturing apparatus 10 are preferably made of stainless steel (SUS).
- the material for the PSZ container 20 and the semiconductor manufacturing apparatus 10 is not limited to SUS but may be an arbitrary material that has good airtightness, that does not react with the PSZ, and that does not cause a metal contamination.
- the PSZ supply tube 12 and the He supply tube 16 are used but the DBE supply tube 15 and the exhaust tube 17 are not used. Due to this, the valves 100 , 101 , 102 , and 106 are open whereas the valves 103 , 104 , 105 , and 107 are closed.
- the He supply tube 16 supplies the He gas to the PSZ container 20 to pressurize an interior of the PSZ container 20 .
- An internal atmospheric pressure of the PSZ container 20 is made thereby higher than a surrounding atmospheric pressure, so that the PSZ liquid is supplied to the discharge portion through the PSZ supply tube 12 .
- the PSZ supply tube 12 airtightly supplies the PSZ liquid from the PSZ container 20 to the discharge portion.
- the discharge portion discharges the coating liquid onto the semiconductor substrate (see FIG. 14 ).
- the valves 101 , 102 , and 106 are closed in this order and the valve 107 is opened (at a step S 10 ).
- the exhaust pipe 17 communicates with the PSZ container 20 while the valves other than the valves 100 and 107 are closed.
- the internal pressure of the PSZ container 20 is thereby reduced to about 600 Torr through the exhaust tube 17 (at a step 510 ).
- the valves 105 , 103 , and 101 are opened in this order.
- the internal pressure of the PSZ container 20 is lower than the atmospheric pressure (about 760 Torr). Due to this, DBE is supplied into the PSZ container 20 through the DBE supply tube 15 , the branch tube 13 , the PSZ supply tube from the valve 102 to the connector C 1 a (hereinafter, the PSZ supply tube 12 in this section will be referred to as “piping 12 a ”), and the PSZ outlet tube 21 .
- the PSZ liquid remaining in the piping 12 a and the PSZ outlet tube 21 is thereby forced into the PSZ container 20 .
- the piping 12 a and the PSZ outlet tube 21 are filled with the DBE (at a step S 30 ).
- the valves 100 and 105 are closed (at a step S 40 ).
- the valves 106 and 104 are then opened in this order.
- the He supply tube 16 thereby communicates with the PSZ container 20 through the branch tubes 14 and 13 .
- the valves 103 and 106 are closed (at a step. 570 ).
- the connector C 1 a is disconnected from the connector C 1 b
- the connector C 2 a is disconnected from the connector C 2 b
- the used PSZ container 20 is detached from the semiconductor manufacturing apparatus 10 (at a step S 80 ).
- the PSZ supply tube 12 from the valve 102 to the discharge portion is filled with the PSZ liquid.
- the piping 12 a and a piping (hereinafter, “piping 21 a ”) from the connector C 1 b of the PSZ container 20 to the valve 101 are exposed to the atmosphere.
- the piping 12 a is washed by the DBE used as the solvent for the PSZ liquid in the PSZ container 20 , no PSZ liquid remains in the piping 12 a. Therefore, no PSZ solid matter is generated in the pipings 12 a and 21 a.
- FIG. 5 is a flowchart that shows a flow of an operation for attaching the PSZ container 20 to the semiconductor manufacturing apparatus 10 .
- FIGS. 1 and 5 an operation for attaching the new PSZ container 20 to the apparatus 10 will be described.
- the new PSZ container 20 is connected to the semiconductor manufacturing apparatus 10 (at a step S 90 ). At this time, all the valves 100 to 107 are closed. The valves 107 , 104 , and 103 are then opened in this order. Internal pressures of the piping 12 a and the branch tubes 103 and 104 are reduced to 10 ⁇ 4 to 10 ⁇ 5 Torr (at a step S 100 ).
- valve 101 After closing the valves 107 and 104 in this order, the valve 101 is opened. At this time, a piping including the piping 12 a from the valve 101 to the valve 103 and the branch tube 13 are in a low pressure state close to a vacuum. Therefore, the PSZ liquid in the PSZ container 20 promptly reaches close to the valve 104 (at a step S 110 ).
- valve 105 After closing the valve 103 , the valve 105 is opened.
- the PSZ liquid in the branch tube 13 is thereby mixed with the DBE (at a step S 120 ).
- valve 106 is opened, the He gas is supplied into a crisscross piping partitioned by the valves 100 , 107 , 106 , and 104 , and an internal pressure of the crisscross piping is thereby returned to about 600 Torr (at a step S 130 ).
- the valve 100 is opened.
- the internal pressure of the crisscross piping partitioned by the valves 100 , 107 , 106 , and 104 is slightly lower than the atmospheric pressure. Due to this, a mixture liquid of the PSZ, and the DBE in the branch tube 13 is returned to at least the piping 12 a (at a step S 140 ).
- the DBE liquid is used as the solvent for the PSZ liquid in the PSZ container 20 , no problem occurs even if a small amount of the mixture liquid enters the PSZ container 20 . It is noted that He air bubbles are sometimes mixed into this mixture liquid of the PSZ and the DBE.
- the valve 106 is opened (at a step S 150 ).
- the PSZ liquid in the PSZ container 20 can be thereby supplied to the discharge portion through the PSZ supply tube 12 . Since the initially supplied liquid is either the mixture liquid of the PSZ and the DBE or the mixture liquid containing the He air bubbles, the liquid is disposed of.
- the detachment operation and the attachment operation for detaching and attaching the PSZ container 20 are repeatedly carried out according to the steps S 10 to S 150 .
- the PSZ liquid can be supplied to the discharge portion without exposure to the air.
- the STI in the NAND flash memory is, in particular, high in aspect ration as compared with a logic circuit, and required to bury the silicon oxide film in a non-tapered trench.
- the residual liquid does not contact with the atmosphere and no hazardous and ignitable gas such as ammonium or silane is generated.
- the valves 102 to 105 are preferably gate valves, e.g., block valves, without any excessive space at branch portions.
- FIG. 6 is a schematic diagram of a semiconductor manufacturing apparatus 40 and a PSZ container 50 according to a second embodiment of the present invention.
- the semiconductor manufacturing apparatus 40 differs from the semiconductor manufacturing apparatus shown in FIG. 14 in that a tip end of a PSZ supply tube 42 is formed into a “J” shape.
- the other constituent elements of the semiconductor manufacturing apparatus 40 may be identical to those of the semiconductor manufacturing apparatus shown in FIG. 14 .
- the PSZ container 50 contains not only a PSZ liquid but also a protection liquid 52 that shuts off the PSZ liquid from the atmosphere.
- the other constituent elements of the PSZ container 50 may be identical to those of the PSZ container shown in FIG. 14 .
- an end of the PSZ supply tube is directed downward. Due to this, when the PSZ container is attached to the semiconductor manufacturing apparatus, air bubbles tend to be mixed into the PSZ supply tube. When the air bubbles are oxygen or water bubbles, they may disadvantageously cause the PSZ liquid to be solidified. When the air bubbles are inert gas bubbles such as helium bubbles, the PSZ liquid is disadvantageously difficult to discharge from the discharge portion.
- an end of the PSZ supply tube 42 is directed upward. This can make it more difficult to mix air bubbles into the PSZ supply tube 42 when the PSZ container 50 is attached to the semiconductor manufacturing apparatus 40 . It is noted that the PSZ container 50 is attached to the semiconductor manufacturing apparatus 40 after a valve 501 is closed. By doing so, even while the PSZ container 50 is being attached to the apparatus 40 , the PSZ liquid remains at the tip end of the PSZ supply tube 42 .
- FIGS. 7 and 8 are cross-sectional views of the PSZ container 50 according to the second embodiment.
- FIG. 7 shows the PSZ container 50 when being attached to the semiconductor manufacturing apparatus 40
- FIG. 8 shows the PSZ container 50 when being detached from the semiconductor manufacturing apparatus 40 .
- Desirable conditions for the protection liquid 52 that covers the PSZ in the PSZ container 50 are: no reaction with the PSZ liquid (condition 1), lower specific gravity than that of the PSZ liquid and no mixture with the PSZ liquid (condition 2), higher wettability with an inner wall of the PSZ container 50 than that of the PSZ liquid (condition 3), and non-inclusion of carbon (C) in impurities (condition 4).
- the conditions 1 and 2 are necessary conditions. Examples of a material that satisfies the conditions 1 and 2 include straight-chain-hydrocarbon and cyclic cyclohexane.
- the protection liquid 52 When the protection liquid 52 satisfies the conditions 1 and 2, the protection liquid 52 can cover a liquid level of the PSZ liquid in the PSZ container 50 . When the protection liquid 52 satisfies the conditions 3, the protection liquid 52 can cover the inner wall of the PSZ container 50 and the residual PSZ liquid tends to reside on a bottom of the PSZ container 50 as shown in FIG. 8 . It is thereby possible to ensure that the PSZ liquid is shut off from the atmosphere.
- the condition 4 is intended to eliminate carbon that may have a conductive type of either p or n as much as possible.
- the air enters the PSZ container 50 .
- the protection liquid 52 covers the surface of the PSZ, it is possible to prevent contact of the PSZ with the air.
- the protection film 52 covers the surface of the PSZ.
- the protection liquid 52 has a favorable wettability, the protection liquid 52 even covers the surface of the PSZ adhering to the inner wall of the PSZ container 50 .
- the protection liquid 52 enters the PSZ supply tube 42 .
- the specific gravity of the protection liquid 52 is lower than that of the PSZ liquid and the tip end of the PSZ supply tube 42 is J-shaped and directed upward, the protection liquid 52 surfaces on the tip end of the PSZ supply tube 42 . Therefore, the protection liquid 52 is not supplied to a discharge portion 44 .
- the protection liquid 52 may be also used in a waste liquid container provided below a spin coater. If so, a waste liquid is thereby out of contact with the air.
- the second embodiment is, therefore, more preferable in environmental and safety aspects.
- the semiconductor manufacturing apparatus 40 and the PSZ container 50 according to the second embodiment are relatively inexpensive and can be realized by simple changes in designs of the conventional semiconductor manufacturing apparatus and the conventional PSZ container, respectively.
- FIG. 9 is a cross-sectional view of a semiconductor manufacturing apparatus 40 and a PSZ container 60 according to a third embodiment of the present invention.
- the PSZ container 60 according to the third embodiment includes a narrow opening portion 61 and a concave portion 63 that can accept a J-shaped tip end E of a PSZ supply tube 42 .
- the semiconductor manufacturing apparatus 40 is identical to the semiconductor manufacturing apparatus 40 according to the second embodiment.
- the opening portion 61 is narrow, an area by which a PSZ liquid contacts with the air can be made small.
- the PSZ liquid can be made most use of to the end.
- the semiconductor manufacturing apparatus 40 and the PSZ container 60 according to the third embodiment are also relatively inexpensive and can be realized by simple changes in designs of the conventional semiconductor manufacturing apparatus and the conventional PSZ container, respectively.
- FIG. 10 is a schematic diagram of a semiconductor manufacturing apparatus 70 and a PSZ container 80 according to a fourth embodiment of the present invention.
- the semiconductor manufacturing apparatus 70 differs from the semiconductor manufacturing apparatus shown in FIG. 14 in that the apparatus 70 includes a liquid bath 73 that contains a DBE liquid.
- a PSZ supply tube 72 and a He supply tube 71 are inserted into the liquid bath 73 , and a tip end of the PSZ supply tube 72 and that of the He supply tube 71 are arranged below a liquid level of the DBE liquid.
- Female connectors 75 are provided at tip ends of the He supply tube 71 and the PSZ supply tube 72 , respectively, and corresponding male connectors 85 having a valve are provided at the PSZ container 80 .
- the PSZ container 80 is connected to the He supply tube 71 and the PSZ supply tube 72 .
- Attachment and detachment of the PSZ container 80 to and from the semiconductor manufacturing apparatus 70 are executed in the DBE liquid. Therefore, the air does not contact with the PSZ liquid. Since the DBE liquid is contained in the PSZ container 80 as a solvent for the PSZ liquid, no problem occurs even if a small amount of the DBE liquid pis mixed into the PSZ container 80 .
- the semiconductor manufacturing apparatus and the PSZ container 80 according to the fourth embodiment are also relatively inexpensive, and can be realized by simple changes in designs of the conventional semiconductor manufacturing apparatus and the conventional PSZ container, respectively.
- a material for the PSZ container 80 may be a flexible material such as polyethylene in place of glass.
- the air can be easily removed by an operator's compressing the PSZ container 80 by an operator's hand after the PSZ container 80 is dipped into the liquid bath 73 . It is noted that the DBE liquid does not flow backward into the PSZ container 80 since the respective male connectors 85 include valves.
- FIG. 11 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container 80 according to a fifth embodiment of the present invention.
- the fifth embodiment differs from the fourth embodiment in a shape of a liquid bath. 91 .
- Other constituent elements in the fifth embodiment may be identical to those in the fourth embodiment.
- a region R 1 of the liquid bath 91 into which a tip end of a He supply tube 71 and that of a PSZ supply tube 72 are inserted, is filled with a DBE liquid. Therefore, a PSZ liquid does not contact with not only the air but also a gas such as He.
- a region R 2 of the liquid bath 91 has an upper opening portion.
- the PSZ container 80 can be attached to the He supply tube 71 and the PSZ supply tube 72 by operator's inserting the PSZ container 80 into the liquid bath 91 from this opening portion.
- the liquid bath 91 includes a porthole 93 . The operator can, therefore, connect the PSZ container 80 to the He supply tube 71 and the PSZ supply tube 72 while viewing the liquid bath 91 from the porthole 93 .
- FIG. 12 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container 81 according to a sixth embodiment of the present invention.
- the attachment and detachment of the PSZ container are executed in the DBE liquid.
- the attachment and detachment of the PSZ container are executed in a He gas atmosphere.
- a liquid bath 92 includes a supply port 350 for supplying the He gas and an exhaust port 351 for exhausting the air or the like mixed into the liquid bath 92 together with the He gas.
- a connector C 3 a is connected to a PSZ supply tube 312 through a valve 310 , and also connected to a balloon 360 through a valve 309 .
- a connector C 4 a is connected to a He supply tube 316 .
- the balloon 360 consists of, for example, a rubber having a high elasticity and a low reaction with the PSZ liquid.
- the balloon 360 is filled with the PSZ liquid in advance.
- a valve 307 is provided at the He supply tube 316 , and an exhaust tube 317 is connected between the valve 307 and the connector C 4 a through a valve 308 .
- the PSZ container 81 is moved into the liquid bath 92 so that the connectors C 3 b and C 4 b are provided in the He gas atmosphere in the region R 1 (at a step S 300 ).
- the air may possibly remain in a piping from the valve 306 to the connector C 3 b and a piping from the valve 305 to the connector C 4 b .
- the pressurized He gas is ejected (at a step S 310 ). By doing so, the air is discharged to the outside of the connectors C 3 b and C 4 b. Since the air is higher in specific gravity than the He gas, the air is moved to a liquid level of the DBE liquid and exhausted from the exhaust port 351 .
- the valve 310 is closed, and the valve 309 is closed after the balloon 360 is filled with the PSZ liquid to some degree. After closing all the valves 303 to 308 , the PSZ container 81 is detached.
- the PSZ container 81 can be replaced by a new PSZ container 81 in an environment shut off from the air while preventing mixture of the He gas.
- the embodiments may be executed in combination.
- the PSZ container 50 shown in FIGS. 7 and 8 can be applied to any one of the first and the third to the fifth embodiments.
- FIG. 13 is a table that shows effects of the respective embodiments.
- the numbers of particles generated when the PSZ liquid is coated on the semiconductor substrate at the SOG step are shown.
- many particles having respective particle diameters are generated.
- particles having particle diameters of 0.2 to 1.0 ⁇ m are hardly generated. According to the embodiments of the present invention, therefore, it is expected to improve the yield of semiconductor devices.
- the coating liquid is not limited to the PSZ liquid but may be any coating liquid for forming a silica-containing film or the like.
Abstract
Description
- This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2004-311927, filed on Oct. 27, 2004, the entire contents of which are incorporated herein by reference.
- 1. Field of the Invention
- The present invention relates to a semiconductor manufacturing apparatus, a liquid container and a semiconductor device manufacturing method.
- 2. Related Art
- A semiconductor device such as a NAND flash memory is required to bury a silicon oxide film in a trench having a high aspect ratio so as to form deep STI (shallow trench isolation) in a narrow region.
- To meet this demand, a film formation technique for using both an HDP (high density plasma) film and an SOG (spin on glass) film has been developed (see Japanese Patent No. 3178412). According to this technique, a silicon oxide film is deposited by HDP-CVD (chemical vapor deposition), and a film coated with a perhydropolysilazane liquid (hereinafter,“PSZ (Polysilazane)”) is coated on the silicon oxide film by spin coating. The coated film is then silicified by a cure treatment. It is thereby possible to bury the silicon oxide film in a trench having a high aspect ratio.
-
FIG. 14 is a conceptual view showing a conventional SOG step. Normally, a bottled PSZ liquid filled with nitrogen is commercially available. When a bottle cap is opened at a time of a used PSZ bottle being replaced by a new one, the air never fails to enter the bottles. In addition, during the replacement, the air may possibly enter a PSZ liquid supply nozzle from a tip end of the PSZ liquid supply nozzle. If so, the PSZ liquid unavoidably contacts with the air. - The PSZ developed to be silicified at a temperature as low as about several hundred Celsius (° C.) can react with water and oxygen as represented by Chemical Formula 1, and can be solidified even at a room temperature when being exposed to the atmosphere.
-
—(SiH2NH)n—+2nO→nSiO2+nNH3 (Formula 1) - When the PSZ is solidified in a piping from a PSZ container to a discharge nozzle, the solidified PSZ fixedly adheres onto a semiconductor substrate after being discharged together with the PSZ-coating liquid, thereby disadvantageously causing bulges, divots, and streaks. Even if the solidified PSZ is not formed, the air mixed into the piping and discharged onto the semiconductor substrate as air bubbles may possibly cause the bulges, divots, and streaks. Furthermore, the solidified PSZ may possibly damage the semiconductor substrate and a polishing cloth or cause a contamination during CMP (Chemical Mechanical Polish) process.
- When the PSZ remains in the used container, the PSZ reacts with water and oxygen to generate ammonium (NH3) and silane (SiH4). The ammonium and silane bring about considerably serious environmental and safety problems. It is, therefore, difficult to manage and handle the PSZ and the PSZ container in manufacturing of semiconductor products.
- In these circumstances, therefore, a semiconductor manufacturing apparatus, which airtightly transports a liquid to be coated on a substrate from a container to a discharge portion and suppresses the liquid from coming in contact with the air when the container is replaced by another one, has been desired.
- Furthermore, a liquid container detachable from the semiconductor manufacturing apparatus, which airtightly transports the liquid to be coated on the substrate from the container to the discharge portion and suppresses the liquid from coming in contact with the air when the container is replaced by another one, has been desired.
- A semiconductor manufacturing apparatus according to an embodiment of the present invention comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube supplying an inert gas into a liquid container that contains the coating liquid, and pressurizing an interior of the liquid container; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and a solvent supply tube supplying a solvent, which can dissolve the coating liquid, to the first connecting portion.
- A semiconductor manufacturing apparatus according to an embodiment of the present invention comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube supplying an inert gas into a liquid container that contains the coating liquid, and pressurizing an interior of the liquid container; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and a liquid bath including the solvent capable of dissolving the coating liquid,
- wherein the first connecting portion and the second connecting portion are present in the liquid bath.
- A liquid container according to an embodiment of the present invention which contains a coating liquid and which is undesirable to expose to the atmosphere before utilizing for semiconductor manufacturing, the liquid container being attachable to or detachable from a semiconductor manufacturing apparatus, wherein
- the liquid container seals a coating liquid and a protection liquid, which is lower specific gravity than that of the coating liquid and does not react with the coating liquid, in a pressurized atmosphere with an inert gas higher than the atmospheric pressure.
- A semiconductor manufacturing method using a semiconductor manufacturing apparatus according to an embodiment of the present invention comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube pressurizing an interior of the liquid container with an inert gas; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and an exhaust tube capable of reducing an internal pressure of the coating liquid supply tube including the first connecting portion:
- the method comprising:
- attaching the liquid container to the first connecting portion and the second connecting portion;
- supplying the inert gas to the liquid container via the gas supply tube, thereby carrying the coating liquid to the discharge portion via the coating liquid supply tube;
- discharging the coating liquid to the substrate from the discharge portion;
- reducing an internal pressure of the liquid container via the exhaust tube and the second connecting portion after discharging the coating liquid; and
- returning the coating liquid in the first connecting portion and the liquid supply tube to the liquid container by using the pressure in the liquid container.
-
FIG. 1 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container according to a first embodiment of the present invention; -
FIG. 2 shows aPSZ container 20; -
FIG. 3 shows an operation for detaching thePSZ container 20; -
FIG. 4 is a flowchart that shows a flow of an operation for detaching thePSZ container 20; -
FIG. 5 is a flowchart that shows a flow of an operation for attaching thePSZ container 20; -
FIG. 6 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container according to a second embodiment of the present invention; -
FIG. 7 is a cross-sectional view of a PSZ container according to the second embodiment; -
FIG. 8 is a cross-sectional view of a PSZ container according to the second embodiment; -
FIG. 9 is a cross-sectional view of a PSZ container according to a third embodiment of the present invention; -
FIG. 10 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container according to a fourth embodiment of the present invention; -
FIG. 11 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container according to a fifth embodiment of the present invention; -
FIG. 12 is a schematic diagram of a semiconductor manufacturing apparatus and a PSZ container according to a sixth embodiment of the present invention; -
FIG. 13 is a table that shows effects of the respective embodiments of the present invention; and -
FIG. 14 is a schematic diagram showing a conventional SOG step. - Hereafter, exemplary embodiments of the present invention will be described more specifically with reference to the drawings. Note that the invention is not limited to the embodiments.
-
FIG. 1 is a schematic diagram of asemiconductor manufacturing apparatus 10 and aPSZ container 20 according to a first embodiment of the present invention. Thesemiconductor manufacturing apparatus 10 is an apparatus for dropping a PSZ liquid from a discharge nozzle onto a semiconductor substrate, and spreading the PSZ liquid on the semiconductor substrate by spin coating at an SOG step. - The
semiconductor manufacturing apparatus 10 includes a coating liquid discharge portion (not shown), aPSZ supply tube 12 serving as a coating liquid supply tube, a dibutyl ether supply tube (hereinafter, “DBE supply tube”) 15 serving as a solvent supply tube, a helium supply tube (hereinafter, “He supply tube”) 16 serving as a gas supply tube, anexhaust tube 17, andbranch tubes FIG. 14 , it is not shown inFIG. 1 . - The
semiconductor manufacturing apparatus 10 also includes a connector C1 a serving as a first connecting portion and a connector C2 a serving as a second connecting portion. ThePSZ supply tube 12 is connected to the connector C1 a through avalve 102. One end of thebranch tube 13 is connected to thePSZ supply tube 12 between thevalve 102 and the connector C1 a through avalve 103. The other end of thebranch tube 13 is connected to one end of thebranch tube 14 through avalve 104, and also connected to theDBE supply tube 15 through avalve 105. - The
He supply tube 16 is connected to the connector C2 a through avalve 106. The other end of thebranch tube 14 is connected to theHe supply tube 16 between thevalve 106 and the connector C2 a, and theexhaust tube 17 is connected to theHe supply tube 16 through avalve 107. A vacuum pomp, e.g., a turbomolecular pump, not shown, is connected to theexhaust pipe 17. - As shown in
FIG. 2 , the PSZ container. 20 includes a pair of connectors C1 b and C2 b connectable to the connectors C1 a and C2 a of thesemiconductor manufacturing apparatus 10, respectively. ThePSZ container 20 can be thereby attached to or detached from thePSZ supply tube 12 and theHe supply tube 16. - The
PSZ container 20 also includes aPSZ outlet tube 21 provided from the connector C1 b to neighborhoods of a bottom of thecontainer 20, and aHe inlet tube 22 provided from the connector C2 b to neighborhoods of an upper surface of thecontainer 20.Valves PSZ outlet tube 21 near the connector C1 b and theHe inlet tube 22 near the connector C2 b, respectively, whereby an interior of thePSZ container 20 is shut off from the atmosphere. - The
PSZ container 20 is withdrawn in a sealed state after usage and recyclable by filling a PSZ liquid again into thecontainer 20. An inert gas as well as the PSZ liquid is filled into thePSZ container 20 with the, inert gas pressurized at a slightly higher pressure than an atmospheric pressure. By doing so, the air is not mixed into thePSZ container 20. The PSZ liquid is contained in thePSZ container 20 up to a portion near thevalve 100 but contained so as not to reach thevalve 100. It is thereby possible to prevent air bubbles from being generated in the PSZ liquid. The PSZ liquid is contained in thePSZ container 20 in a state, for example, in which the PSZ liquid is dissolved into a solvent such as dibutyl ether (hereinafter, “DBE”). - The inert gas filled into the
PSZ container 20 is preferably the same as the inert gas, i.e., helium gas supplied to thesemiconductor manufacturing apparatus 10 for the following reasons. The helium possesses a property that it is insoluble with an organic solvent such as the PSZ or DBE, and the helium is less expensive than the other inert gas such as xenon. ThePSZ container 20 and thesemiconductor manufacturing apparatus 10 are preferably made of stainless steel (SUS). However, the material for thePSZ container 20 and thesemiconductor manufacturing apparatus 10 is not limited to SUS but may be an arbitrary material that has good airtightness, that does not react with the PSZ, and that does not cause a metal contamination. - When the PSZ liquid is supplied to the discharge portion, the
PSZ supply tube 12 and theHe supply tube 16 are used but theDBE supply tube 15 and theexhaust tube 17 are not used. Due to this, thevalves valves He supply tube 16 supplies the He gas to thePSZ container 20 to pressurize an interior of thePSZ container 20. An internal atmospheric pressure of thePSZ container 20 is made thereby higher than a surrounding atmospheric pressure, so that the PSZ liquid is supplied to the discharge portion through thePSZ supply tube 12. At this time, thePSZ supply tube 12 airtightly supplies the PSZ liquid from thePSZ container 20 to the discharge portion. The discharge portion discharges the coating liquid onto the semiconductor substrate (seeFIG. 14 ). -
FIG. 3 shows a manner of detaching thePSZ container 20 from thesemiconductor manufacturing apparatus 10.FIG. 4 is a flowchart that shows a flow of an operation for detaching thePSZ container 20. With reference toFIGS. 3 and 4 , the operation for detaching thePSZ container 20 will be described. - When the PSZ liquid is supplied to the discharge portion and a residual amount of the PSZ liquid in the
PSZ container 20 is small, it is necessary to replace thePSZ container 20 by anew PSZ container 20. At this time, if thevalves PSZ supply tube 12 from the connector C1 a to thevalve 102 may possibly come in contact with the air. - To prevent this contact, when the
PSZ container 20 is detached, thevalves valve 107 is opened (at a step S10). At this step, since thevalves exhaust pipe 17 communicates with thePSZ container 20 while the valves other than thevalves PSZ container 20 is thereby reduced to about 600 Torr through the exhaust tube 17 (at a step 510). - After the
valve 107 is closed, thevalves PSZ container 20 is lower than the atmospheric pressure (about 760 Torr). Due to this, DBE is supplied into thePSZ container 20 through theDBE supply tube 15, thebranch tube 13, the PSZ supply tube from thevalve 102 to the connector C1 a (hereinafter, thePSZ supply tube 12 in this section will be referred to as “piping 12 a”), and thePSZ outlet tube 21. The PSZ liquid remaining in the piping 12 a and thePSZ outlet tube 21 is thereby forced into thePSZ container 20. At the same time, the piping 12 a and thePSZ outlet tube 21 are filled with the DBE (at a step S30). - After the internal pressure of the
PSZ container 20 is identical to the atmospheric pressure, thevalves valves He supply tube 16 thereby communicates with thePSZ container 20 through thebranch tubes He supply tube 16, the DBE remaining in thebranch tube 13, the piping 12 a, and thePSZ outlet tube 21 is forced into the PSZ container 20 (at a step 560). When the internal pressure of thePSZ container 20 reaches at about 900 Torr, thevalves PSZ container 20 is detached from the semiconductor manufacturing apparatus 10 (at a step S80). - Since the He gas at the higher pressure than the atmospheric pressure is filled into the used
PSZ container 20, the air is not mixed into thePSZ container 20. It is, therefore, possible to prevent oxygen and water from reacting with the PSZ liquid in thePSZ container 20. - When the used
PSZ container 20 is detached from thesemiconductor manufacturing apparatus 10, thePSZ supply tube 12 from thevalve 102 to the discharge portion is filled with the PSZ liquid. The piping 12 a and a piping (hereinafter, “piping 21 a”) from the connector C1 b of thePSZ container 20 to thevalve 101 are exposed to the atmosphere. In this embodiment, however, the piping 12 a is washed by the DBE used as the solvent for the PSZ liquid in thePSZ container 20, no PSZ liquid remains in the piping 12 a. Therefore, no PSZ solid matter is generated in thepipings -
FIG. 5 is a flowchart that shows a flow of an operation for attaching thePSZ container 20 to thesemiconductor manufacturing apparatus 10. With reference toFIGS. 1 and 5 , an operation for attaching thenew PSZ container 20 to theapparatus 10 will be described. - Although no PSZ liquid is contained in the piping 21 a of the
new PSZ container 20, the piping 21 a is exposed to the atmosphere. Due to this, it is necessary to take care not to contact the air present in thepipings - The
new PSZ container 20 is connected to the semiconductor manufacturing apparatus 10 (at a step S90). At this time, all thevalves 100 to 107 are closed. Thevalves branch tubes - After closing the
valves valve 101 is opened. At this time, a piping including the piping 12 a from thevalve 101 to thevalve 103 and thebranch tube 13 are in a low pressure state close to a vacuum. Therefore, the PSZ liquid in thePSZ container 20 promptly reaches close to the valve 104 (at a step S110). - After closing the
valve 103, thevalve 105 is opened. The PSZ liquid in thebranch tube 13 is thereby mixed with the DBE (at a step S120). - Next, the
valve 106 is opened, the He gas is supplied into a crisscross piping partitioned by thevalves valve 106, thevalve 100 is opened. At this time, the internal pressure of the crisscross piping partitioned by thevalves branch tube 13 is returned to at least the piping 12 a (at a step S140). Since the DBE liquid is used as the solvent for the PSZ liquid in thePSZ container 20, no problem occurs even if a small amount of the mixture liquid enters thePSZ container 20. It is noted that He air bubbles are sometimes mixed into this mixture liquid of the PSZ and the DBE. - After closing the
valve 103, thevalve 106 is opened (at a step S150). The PSZ liquid in thePSZ container 20 can be thereby supplied to the discharge portion through thePSZ supply tube 12. Since the initially supplied liquid is either the mixture liquid of the PSZ and the DBE or the mixture liquid containing the He air bubbles, the liquid is disposed of. - When the amount of the PSZ liquid in the
PSZ container 20 is reduced, the detachment operation and the attachment operation for detaching and attaching thePSZ container 20 are repeatedly carried out according to the steps S10 to S150. As described above, according to the first embodiment, the PSZ liquid can be supplied to the discharge portion without exposure to the air. - In recent years, following an increase in the aspect ratio of STI, it has been difficult to bury the silicon oxide film in the trench. The STI in the NAND flash memory is, in particular, high in aspect ration as compared with a logic circuit, and required to bury the silicon oxide film in a non-tapered trench.
- When the present embodiment is applied, such defects as bumps, divots, and streaks can be prevented even at manufacturing steps of a NAND flash memory with a trench having an opening width of, for example, 90 to 70 nm. This can contribute to an improvement in the yield of semiconductor devices.
- Furthermore, in the used
PSZ container 20, the residual liquid does not contact with the atmosphere and no hazardous and ignitable gas such as ammonium or silane is generated. - The
valves 102 to 105 are preferably gate valves, e.g., block valves, without any excessive space at branch portions. -
FIG. 6 is a schematic diagram of asemiconductor manufacturing apparatus 40 and aPSZ container 50 according to a second embodiment of the present invention. Thesemiconductor manufacturing apparatus 40 differs from the semiconductor manufacturing apparatus shown inFIG. 14 in that a tip end of aPSZ supply tube 42 is formed into a “J” shape. The other constituent elements of thesemiconductor manufacturing apparatus 40 may be identical to those of the semiconductor manufacturing apparatus shown inFIG. 14 . ThePSZ container 50 contains not only a PSZ liquid but also aprotection liquid 52 that shuts off the PSZ liquid from the atmosphere. The other constituent elements of thePSZ container 50 may be identical to those of the PSZ container shown inFIG. 14 . - In the semiconductor manufacturing apparatus shown in
FIG. 14 , an end of the PSZ supply tube is directed downward. Due to this, when the PSZ container is attached to the semiconductor manufacturing apparatus, air bubbles tend to be mixed into the PSZ supply tube. When the air bubbles are oxygen or water bubbles, they may disadvantageously cause the PSZ liquid to be solidified. When the air bubbles are inert gas bubbles such as helium bubbles, the PSZ liquid is disadvantageously difficult to discharge from the discharge portion. - In the
semiconductor manufacturing apparatus 40 according to the second embodiment, by contrast, an end of thePSZ supply tube 42 is directed upward. This can make it more difficult to mix air bubbles into thePSZ supply tube 42 when thePSZ container 50 is attached to thesemiconductor manufacturing apparatus 40. It is noted that thePSZ container 50 is attached to thesemiconductor manufacturing apparatus 40 after avalve 501 is closed. By doing so, even while thePSZ container 50 is being attached to theapparatus 40, the PSZ liquid remains at the tip end of thePSZ supply tube 42. -
FIGS. 7 and 8 are cross-sectional views of thePSZ container 50 according to the second embodiment.FIG. 7 shows thePSZ container 50 when being attached to thesemiconductor manufacturing apparatus 40, andFIG. 8 shows thePSZ container 50 when being detached from thesemiconductor manufacturing apparatus 40. - Desirable conditions for the
protection liquid 52 that covers the PSZ in thePSZ container 50 are: no reaction with the PSZ liquid (condition 1), lower specific gravity than that of the PSZ liquid and no mixture with the PSZ liquid (condition 2), higher wettability with an inner wall of thePSZ container 50 than that of the PSZ liquid (condition 3), and non-inclusion of carbon (C) in impurities (condition 4). Theconditions 1 and 2 are necessary conditions. Examples of a material that satisfies theconditions 1 and 2 include straight-chain-hydrocarbon and cyclic cyclohexane. - When the
protection liquid 52 satisfies theconditions 1 and 2, theprotection liquid 52 can cover a liquid level of the PSZ liquid in thePSZ container 50. When theprotection liquid 52 satisfies the conditions 3, theprotection liquid 52 can cover the inner wall of thePSZ container 50 and the residual PSZ liquid tends to reside on a bottom of thePSZ container 50 as shown inFIG. 8 . It is thereby possible to ensure that the PSZ liquid is shut off from the atmosphere. The condition 4 is intended to eliminate carbon that may have a conductive type of either p or n as much as possible. - In the second embodiment, when the
new PSZ container 50 is attached to thesemiconductor manufacturing apparatus 40, the air enters thePSZ container 50. However, since theprotection liquid 52 covers the surface of the PSZ, it is possible to prevent contact of the PSZ with the air. Further, when the usedPSZ container 50 is detached from thesemiconductor manufacturing apparatus 40, it is possible to prevent the contact of the PSZ liquid with the air since theprotection film 52 covers the surface of the PSZ. In addition, while the PSZ liquid is being supplied, the liquid level of the PSZ is lowered. However, since theprotection liquid 52 has a favorable wettability, theprotection liquid 52 even covers the surface of the PSZ adhering to the inner wall of thePSZ container 50. - As shown in
FIG. 8 , even if thePSZ container 50 is temporarily held at a different location, the air in thePSZ container 50 does not contact with the PSZ liquid and no ammonium or silane is, therefore, generated in thePSZ container 50. - When the
PSZ container 50 is attached to thesemiconductor manufacturing apparatus 40, theprotection liquid 52 enters thePSZ supply tube 42. However, since the specific gravity of theprotection liquid 52 is lower than that of the PSZ liquid and the tip end of thePSZ supply tube 42 is J-shaped and directed upward, theprotection liquid 52 surfaces on the tip end of thePSZ supply tube 42. Therefore, theprotection liquid 52 is not supplied to adischarge portion 44. - In the second embodiment, the
protection liquid 52 may be also used in a waste liquid container provided below a spin coater. If so, a waste liquid is thereby out of contact with the air. The second embodiment is, therefore, more preferable in environmental and safety aspects. - The
semiconductor manufacturing apparatus 40 and thePSZ container 50 according to the second embodiment are relatively inexpensive and can be realized by simple changes in designs of the conventional semiconductor manufacturing apparatus and the conventional PSZ container, respectively. -
FIG. 9 is a cross-sectional view of asemiconductor manufacturing apparatus 40 and aPSZ container 60 according to a third embodiment of the present invention. ThePSZ container 60 according to the third embodiment includes anarrow opening portion 61 and aconcave portion 63 that can accept a J-shaped tip end E of aPSZ supply tube 42. Thesemiconductor manufacturing apparatus 40 is identical to thesemiconductor manufacturing apparatus 40 according to the second embodiment. - According to the third embodiment, since the opening
portion 61 is narrow, an area by which a PSZ liquid contacts with the air can be made small. In addition, by inserting the tip end E of thePSZ supply tube 42 into theconcave portion 63, the PSZ liquid can be made most use of to the end. - The
semiconductor manufacturing apparatus 40 and thePSZ container 60 according to the third embodiment are also relatively inexpensive and can be realized by simple changes in designs of the conventional semiconductor manufacturing apparatus and the conventional PSZ container, respectively. -
FIG. 10 is a schematic diagram of asemiconductor manufacturing apparatus 70 and aPSZ container 80 according to a fourth embodiment of the present invention. Thesemiconductor manufacturing apparatus 70 differs from the semiconductor manufacturing apparatus shown inFIG. 14 in that theapparatus 70 includes aliquid bath 73 that contains a DBE liquid. APSZ supply tube 72 and aHe supply tube 71 are inserted into theliquid bath 73, and a tip end of thePSZ supply tube 72 and that of theHe supply tube 71 are arranged below a liquid level of the DBE liquid. -
Female connectors 75 are provided at tip ends of theHe supply tube 71 and thePSZ supply tube 72, respectively, and correspondingmale connectors 85 having a valve are provided at thePSZ container 80. By one-touch connection between thefemale connectors 75 and the correspondingmale connectors 85, thePSZ container 80 is connected to theHe supply tube 71 and thePSZ supply tube 72. - Attachment and detachment of the
PSZ container 80 to and from thesemiconductor manufacturing apparatus 70 are executed in the DBE liquid. Therefore, the air does not contact with the PSZ liquid. Since the DBE liquid is contained in thePSZ container 80 as a solvent for the PSZ liquid, no problem occurs even if a small amount of the DBE liquid pis mixed into thePSZ container 80. - Furthermore, the semiconductor manufacturing apparatus and the
PSZ container 80 according to the fourth embodiment are also relatively inexpensive, and can be realized by simple changes in designs of the conventional semiconductor manufacturing apparatus and the conventional PSZ container, respectively. - A material for the
PSZ container 80 may be a flexible material such as polyethylene in place of glass. When thePSZ container 80 consists of the flexible material and the air is mixed into themale connectors 85, the air can be easily removed by an operator's compressing thePSZ container 80 by an operator's hand after thePSZ container 80 is dipped into theliquid bath 73. It is noted that the DBE liquid does not flow backward into thePSZ container 80 since the respectivemale connectors 85 include valves. -
FIG. 11 is a schematic diagram of a semiconductor manufacturing apparatus and aPSZ container 80 according to a fifth embodiment of the present invention. The fifth embodiment differs from the fourth embodiment in a shape of a liquid bath. 91. Other constituent elements in the fifth embodiment may be identical to those in the fourth embodiment. A region R1 of theliquid bath 91, into which a tip end of aHe supply tube 71 and that of aPSZ supply tube 72 are inserted, is filled with a DBE liquid. Therefore, a PSZ liquid does not contact with not only the air but also a gas such as He. - A region R2 of the
liquid bath 91 has an upper opening portion. ThePSZ container 80 can be attached to theHe supply tube 71 and thePSZ supply tube 72 by operator's inserting thePSZ container 80 into theliquid bath 91 from this opening portion. Theliquid bath 91 includes aporthole 93. The operator can, therefore, connect thePSZ container 80 to theHe supply tube 71 and thePSZ supply tube 72 while viewing theliquid bath 91 from theporthole 93. -
FIG. 12 is a schematic diagram of a semiconductor manufacturing apparatus and aPSZ container 81 according to a sixth embodiment of the present invention. In the fourth and the fifth embodiments, the attachment and detachment of the PSZ container are executed in the DBE liquid. In the sixth embodiment, the attachment and detachment of the PSZ container are executed in a He gas atmosphere. - An upper portion of a region R1 of the
PSZ container 81 is filled with the He gas. Aliquid bath 92 includes a supply port 350 for supplying the He gas and anexhaust port 351 for exhausting the air or the like mixed into theliquid bath 92 together with the He gas. By so constituting, even if the gas other than the He gas is mixed into thePSZ container 81 while thePSZ container 81 is being replaced with anothercontainer 81, the gas can be exhausted. - In the semiconductor manufacturing apparatus, a connector C3 a is connected to a
PSZ supply tube 312 through avalve 310, and also connected to aballoon 360 through avalve 309. A connector C4 a is connected to aHe supply tube 316. Theballoon 360 consists of, for example, a rubber having a high elasticity and a low reaction with the PSZ liquid. Theballoon 360 is filled with the PSZ liquid in advance. Avalve 307 is provided at theHe supply tube 316, and anexhaust tube 317 is connected between thevalve 307 and the connector C4 a through avalve 308. - A
PSZ outlet tube 321 and aHe inlet tube 322 of thePSZ container 81 include twovalves valves PSZ outlet tube 321 and theHe inlet tube 322 are formed to be directed downward. ThePSZ outlet tube 321 from thePSZ container 81 to thevalve 304 is filled with the PSZ liquid in advance, and a piping between thevalves valves - An operation for attaching the
PSZ container 81 to the semiconductor manufacturing apparatus will be described. ThePSZ container 81 is moved into theliquid bath 92 so that the connectors C3 b and C4 b are provided in the He gas atmosphere in the region R1 (at a step S300). At this time, the air may possibly remain in a piping from thevalve 306 to the connector C3 b and a piping from thevalve 305 to the connector C4 b. Considering this, by opening thevalves exhaust port 351. - Thereafter, the connector C3 a is connected to the connector C3 b and the connector C4 a is connected to the connector C4 b (at a step S320). At this time, the
valves valves balloon 360 filled with the PSZ liquid is thereby contracted and the He gas residing in a piping from thevalve 304 to thevalve 309 is returned into thePSZ container 81. - After closing the
valves valves He supply tube 316 thereby supplies the He gas into thePSZ container 81 and the PSZ liquid is supplied to a discharge portion through thePSZ supply tube 312. - When the
PSZ container 81 is to be detached from the semiconductor manufacturing apparatus, then thevalve 310 is closed, and thevalve 309 is closed after theballoon 360 is filled with the PSZ liquid to some degree. After closing all thevalves 303 to 308, thePSZ container 81 is detached. - According to the fifth embodiment, the
PSZ container 81 can be replaced by anew PSZ container 81 in an environment shut off from the air while preventing mixture of the He gas. - As described above, in the embodiments, it is preferable that the PSZ liquid is discharged onto a dummy wafer before being coated on a desired wafer. This is because the DBE liquid may possibly enter the
PSZ container 81 during the replacement. - The embodiments may be executed in combination. For example, the
PSZ container 50 shown inFIGS. 7 and 8 can be applied to any one of the first and the third to the fifth embodiments. -
FIG. 13 is a table that shows effects of the respective embodiments. In the table ofFIG. 13 , the numbers of particles generated when the PSZ liquid is coated on the semiconductor substrate at the SOG step are shown. In the conventional technique shown inFIG. 14 , many particles having respective particle diameters are generated. In the first to the sixth embodiments, particles having particle diameters of 0.2 to 1.0 μm are hardly generated. According to the embodiments of the present invention, therefore, it is expected to improve the yield of semiconductor devices. - In the respective embodiments of the present invention, the coating liquid is not limited to the PSZ liquid but may be any coating liquid for forming a silica-containing film or the like.
Claims (8)
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US12/659,071 US8119196B2 (en) | 2004-10-27 | 2010-02-24 | Semiconductor manufacturing apparatus, liquid container, and semiconductor device manufacturing method |
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JP2004311927A JP2006128246A (en) | 2004-10-27 | 2004-10-27 | Semiconductor manufacturing device, solution container, and method of manufacturing semiconductor device |
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US11/246,145 US20060134928A1 (en) | 2004-10-27 | 2005-10-11 | Semiconductor manufacturing apparatus, liquid container, and semiconductor device manufacturing method |
US12/659,071 US8119196B2 (en) | 2004-10-27 | 2010-02-24 | Semiconductor manufacturing apparatus, liquid container, and semiconductor device manufacturing method |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160031031A1 (en) * | 2014-07-31 | 2016-02-04 | Fujitsu Ten Limited | Coating apparatus and cleaning method |
US20160059170A1 (en) * | 2014-08-29 | 2016-03-03 | Fujitsu Ten Limited | Applying apparatus |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4965953B2 (en) * | 2006-09-29 | 2012-07-04 | 株式会社東芝 | Method for handling polysilazane or polysilazane solution, method for producing polysilazane solution, and semiconductor device |
KR101976429B1 (en) * | 2018-03-21 | 2019-05-10 | 주식회사 아리솔테크 | Photoresist bubble clear reclaim supply system |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4286541A (en) * | 1979-07-26 | 1981-09-01 | Fsi Corporation | Applying photoresist onto silicon wafers |
US4544576A (en) * | 1981-07-27 | 1985-10-01 | International Business Machines Corporation | Deep dielectric isolation by fused glass |
US5195680A (en) * | 1988-08-29 | 1993-03-23 | Hose Specialties/Capri, Inc. | Coaxial paint hose and supply system |
US5590695A (en) * | 1993-04-28 | 1997-01-07 | Advanced Delivery & Chemical Systems, Inc. | Manifold systems for high purity chemical delivery systems |
US5607000A (en) * | 1994-10-31 | 1997-03-04 | Motorola, Inc. | Hazardous material liquid dispensing system and method |
US5765072A (en) * | 1996-02-28 | 1998-06-09 | Dainippon Screen Mfg. Co. Ltd. | Treating solution supplying method and substrate treating apparatus |
US5964254A (en) * | 1997-07-11 | 1999-10-12 | Advanced Delivery & Chemical Systems, Ltd. | Delivery system and manifold |
US20040224094A1 (en) * | 2000-05-02 | 2004-11-11 | Samsung Electronics Co., Ltd. | Method of forming a silicon oxide layer in a semiconductor manufacturing process |
US20050051234A1 (en) * | 2002-05-23 | 2005-03-10 | Steidl Thomas Andrew | Purgeable container for low vapor pressure chemicals |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03178412A (en) | 1989-12-07 | 1991-08-02 | Mazda Motor Corp | In-mold coating method |
JP2984969B2 (en) | 1993-11-12 | 1999-11-29 | 東京エレクトロン株式会社 | Processing system |
JP3178412B2 (en) | 1998-04-27 | 2001-06-18 | 日本電気株式会社 | Method of forming trench isolation structure |
JP4088062B2 (en) | 2001-11-09 | 2008-05-21 | 株式会社堀場エステック | Purge method in material tank connection part of liquid material supply device |
JP2005236050A (en) | 2004-02-19 | 2005-09-02 | Az Electronic Materials Kk | Apparatus for supplying chemical solutions for manufacturing electronic device and method for exchanging solution vessel |
-
2004
- 2004-10-27 JP JP2004311927A patent/JP2006128246A/en active Pending
-
2005
- 2005-10-11 US US11/246,145 patent/US20060134928A1/en not_active Abandoned
-
2010
- 2010-02-24 US US12/659,071 patent/US8119196B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4286541A (en) * | 1979-07-26 | 1981-09-01 | Fsi Corporation | Applying photoresist onto silicon wafers |
US4544576A (en) * | 1981-07-27 | 1985-10-01 | International Business Machines Corporation | Deep dielectric isolation by fused glass |
US5195680A (en) * | 1988-08-29 | 1993-03-23 | Hose Specialties/Capri, Inc. | Coaxial paint hose and supply system |
US5590695A (en) * | 1993-04-28 | 1997-01-07 | Advanced Delivery & Chemical Systems, Inc. | Manifold systems for high purity chemical delivery systems |
US5607000A (en) * | 1994-10-31 | 1997-03-04 | Motorola, Inc. | Hazardous material liquid dispensing system and method |
US5765072A (en) * | 1996-02-28 | 1998-06-09 | Dainippon Screen Mfg. Co. Ltd. | Treating solution supplying method and substrate treating apparatus |
US5964254A (en) * | 1997-07-11 | 1999-10-12 | Advanced Delivery & Chemical Systems, Ltd. | Delivery system and manifold |
US20040224094A1 (en) * | 2000-05-02 | 2004-11-11 | Samsung Electronics Co., Ltd. | Method of forming a silicon oxide layer in a semiconductor manufacturing process |
US20050051234A1 (en) * | 2002-05-23 | 2005-03-10 | Steidl Thomas Andrew | Purgeable container for low vapor pressure chemicals |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160031031A1 (en) * | 2014-07-31 | 2016-02-04 | Fujitsu Ten Limited | Coating apparatus and cleaning method |
US20160059170A1 (en) * | 2014-08-29 | 2016-03-03 | Fujitsu Ten Limited | Applying apparatus |
US9648756B2 (en) * | 2014-08-29 | 2017-05-09 | Fujitsu Ten Limited | Applying apparatus |
Also Published As
Publication number | Publication date |
---|---|
US8119196B2 (en) | 2012-02-21 |
US20060134928A1 (en) | 2006-06-22 |
JP2006128246A (en) | 2006-05-18 |
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