US20100144085A1 - Substrate structures and fabrication methods thereof - Google Patents

Substrate structures and fabrication methods thereof Download PDF

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Publication number
US20100144085A1
US20100144085A1 US12/694,231 US69423110A US2010144085A1 US 20100144085 A1 US20100144085 A1 US 20100144085A1 US 69423110 A US69423110 A US 69423110A US 2010144085 A1 US2010144085 A1 US 2010144085A1
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Prior art keywords
substrate
electrode structure
bendable
inorganic electrode
fabricating
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US12/694,231
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Lih-Hsiung Chan
Ming-Chun Hsiao
Wei-Ling Lin
Gary Wei
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Industrial Technology Research Institute ITRI
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Industrial Technology Research Institute ITRI
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Priority to US12/694,231 priority Critical patent/US20100144085A1/en
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Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669Nanowires or nanotubes
    • H01L29/0673Nanowires or nanotubes oriented parallel to a substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/207Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a prefabricated paste pattern, ink pattern or powder pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0393Flexible materials
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0242Shape of an individual particle
    • H05K2201/0251Non-conductive microfibers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0242Shape of an individual particle
    • H05K2201/026Nanotubes or nanowires
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01Tools for processing; Objects used during processing
    • H05K2203/0147Carriers and holders
    • H05K2203/016Temporary inorganic, non-metallic carrier, e.g. for processing or transferring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates

Definitions

  • the invention relates to substrate structures and fabrication methods thereof, and more particularly to bendable polymer substrate with inorganic electrode structures and fabrication methods thereof.
  • substrates have to be bendable and flexible in order to fit in non-planar base or portable applications unsuited to use of conventional hard substrate structures.
  • Organic or polymer flexible substrate structures more specifically, with one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material have to be formed at above 400° C. -500° C.
  • Flexible soft substrates cannot sustain the high temperature process, thus inorganic electrode structures cannot be directly formed on an organic polymer substrate.
  • organic conductive materials such as polyethylenedioxythiophene (PEDOT) on polymer substrate.
  • PEDOT polyethylenedioxythiophene
  • the inorganic conductive materials are also more durable than the organic conductive materials. It is difficult to directly form inorganic conductive materials on a polymer substrate. Therefore, conventional organic conductive materials on polymer substrate cannot meet requirements of flexibility, electrical properties and durability.
  • the invention is directed to inorganic one-dimensional linear conductive materials on bendable and flexible polymer substrate structures, thereby maintaining required electrical properties and flexibility.
  • the invention provides a substrate structure comprising a bendable substrate and an inorganic electrode structure thereon, wherein the inorganic electrode structure comprises a conductive layer or a semiconductor layer.
  • the invention further provides a method for fabricating a substrate structure.
  • a first substrate is provided.
  • An inorganic electrode structure is formed on the first substrate by screen printing.
  • a bendable polymer substrate is applied on the first substrate covering the inorganic electrode structure. The bendable polymer substrate is released from the first substrate such that the inorganic electrode structure is attached to the bendable substrate.
  • FIG. 1 is a flowchart illustrating an exemplary embodiment of fabrication of an organic polymer substrate structure of the invention
  • FIGS. 2A-2D are cross sections illustrating an exemplary embodiment of fabricating a substrate structure of the invention.
  • FIGS. 3A-3E are cross sections illustrating another exemplary embodiment of fabricating a substrate structure of the invention.
  • the invention provides a method for transferring inorganic one-dimensional conductive material, such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material on a bendable polymer substrate, serving as an electrode layer or a semiconductor layer.
  • inorganic electrode materials are superior to conventional organic electrode on polymer substrate, maintaining desired electrical properties and flexibility.
  • FIG. 1 is a flowchart illustrating fabrication steps of an exemplary embodiment of a substrate structure of the invention.
  • a substrate for transferring an inorganic electrode pattern is provided. Selections of the substrate are not limited thereto.
  • patterned one-dimensional conductor paste and electrode structure are formed on the substrate.
  • the one-dimensional conductive material comprises carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material.
  • the one-dimensional conductive material can be fabricated by arc discharging, chemical vapor deposition (CVD), or laser ablation.
  • the CNT powders are gathered in a container.
  • the gathered one-dimensional conductive materials are mixed into a paste and formed into a patterned electrode structure on the substrate by screen printing.
  • step S 40 a polymer layer is applied overlying the substrate and conformably covering the patterned electrode structure.
  • the polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the substrate and then solidified.
  • step S 50 the polymer layer is released from the substrate and the patterned electrode structure transferred onto the polymer layer.
  • FIGS. 2A-2D are cross sections illustrating an exemplary embodiment of steps for fabricating a substrate structure of the invention.
  • a transferring substrate 100 is provided. Since the transferring substrate 100 is configured as a means for transferring an electrode pattern, the structure and composition of the transferring substrate 100 are not limited thereto.
  • a patterned cathode structure is formed on the transferring substrate 100 .
  • the patterned electrode structure can be a planar electrode structure or a stereo electrode structure.
  • a planar parallel electrode structure shown in FIG. 2B comprises a first electrode 112 and a second electrode 114 parallel to each other.
  • the first and second electrodes 112 and 114 comprise one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material.
  • the one-dimensional conductive materials are mixed and blended into paste, and thus printed on the transferring substrate 100 .
  • a polymer layer 200 is applied overlying the transferring substrate 100 and conformably covering the patterned cathode structure.
  • the polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the transferring substrate 100 and then solidified.
  • the first and second electrodes 112 and 114 on the transferring substrate 100 are converted on the corresponding first and second electrodes 112 ′ and 114 ′ on the polymer layer 200 .
  • the polymer layer 200 is released from the transferring substrate 100 and the corresponding electrodes 112 ′ and 114 ′ transferred onto the polymer layer 200 , whereby the substrate structure is maintained with desired electrical properties and flexibility.
  • FIGS. 3A-3E are cross sections illustrating another exemplary embodiment of steps for fabricating a substrate structure of the invention.
  • a transferring substrate 300 is provided. Since the transferring substrate 300 is configured as a means for transferring an electrode pattern, the structure and composition of the transferring substrate 300 are not limited thereto.
  • An electrode 310 is formed on the transferring substrate 300 .
  • the electrode 310 comprises one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material.
  • the one-dimensional conductive materials are mixed and blended into paste, and thus printed on the transferring substrate 100 .
  • a stereo convex structure 314 is formed on the transferring substrate 300 .
  • an electrode 315 is formed on the stereo convex structure 314 .
  • the electrode 315 , the stereo convex structure 314 and the electrode 315 are composed of a stereo electrode structure.
  • the stereo electrode structure on the transferring substrate 300 is complementary with the desirable electrode structure on the polymer substrate.
  • a polymer layer 400 is applied overlying the transferring substrate 300 and conformably covering the stereo electrode structure.
  • the polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the transferring substrate 300 and then solidified.
  • the adhesion between the polymer layer 400 and the electrodes 310 and 315 is stronger than the transferring substrate 300 and the electrodes 310 and 315 .
  • the polymer layer 400 is released from the transferring substrate 300 and the stereo electrode structure transferred onto the polymer layer 400 . Since the adhesion between the polymer layer 400 and the electrodes 310 and 315 is strong, the corresponding electrodes 310 ′ and 315 ′ are transferred onto the flexible polymer layer 400 . The substrate structure is therefore maintained with desired electrical properties and flexibility. Note that the original stereo electrode structure on the transferring substrate is complementary with the corresponding stereo electrode structure on the polymer layer 400 .
  • the substrate structure is applicable to flexible electronic devices, such as radio frequency identification (RFID), flexible printing circuits (FPCs), flexible display devices including organic thin film transistor (OTFT), and field emission display, but is not limited thereto.
  • RFID radio frequency identification
  • FPCs flexible printing circuits
  • OFT organic thin film transistor
  • field emission display but is not limited thereto.
  • the invention provides an electrode structure bearing one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material can be indirectly formed on the flexible polymer substrate, thereby maintaining desired electrical properties and flexibility.
  • one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material

Abstract

Substrate structures and fabrication methods thereof. A substrate structure includes a bendable substrate and an inorganic electrode structure on the bendable structure, wherein the inorganic electrode structure includes a conductive layer or a semiconductor layer. The inorganic electrode structure includes carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material. The bendable substrate includes polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), or polymethyl methacrylate (PMMA).

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The invention relates to substrate structures and fabrication methods thereof, and more particularly to bendable polymer substrate with inorganic electrode structures and fabrication methods thereof.
  • 2. Description of the Related Art
  • In some electronic device applications, substrates have to be bendable and flexible in order to fit in non-planar base or portable applications unsuited to use of conventional hard substrate structures. Organic or polymer flexible substrate structures, more specifically, with one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material have to be formed at above 400° C. -500° C. Flexible soft substrates cannot sustain the high temperature process, thus inorganic electrode structures cannot be directly formed on an organic polymer substrate.
  • Conventional flexible electronic devices are achieved by forming organic conductive materials such as polyethylenedioxythiophene (PEDOT) on polymer substrate. However, the electric properties and stability of the organic conductive materials cannot compete with the inorganic conductive materials. The inorganic conductive materials are also more durable than the organic conductive materials. It is difficult to directly form inorganic conductive materials on a polymer substrate. Therefore, conventional organic conductive materials on polymer substrate cannot meet requirements of flexibility, electrical properties and durability.
  • BRIEF SUMMARY OF THE INVENTION
  • Accordingly, the invention is directed to inorganic one-dimensional linear conductive materials on bendable and flexible polymer substrate structures, thereby maintaining required electrical properties and flexibility.
  • The invention provides a substrate structure comprising a bendable substrate and an inorganic electrode structure thereon, wherein the inorganic electrode structure comprises a conductive layer or a semiconductor layer.
  • The invention further provides a method for fabricating a substrate structure. A first substrate is provided. An inorganic electrode structure is formed on the first substrate by screen printing. A bendable polymer substrate is applied on the first substrate covering the inorganic electrode structure. The bendable polymer substrate is released from the first substrate such that the inorganic electrode structure is attached to the bendable substrate.
  • BRIEF DESCRIPTION OF DRAWINGS
  • The invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
  • FIG. 1 is a flowchart illustrating an exemplary embodiment of fabrication of an organic polymer substrate structure of the invention;
  • FIGS. 2A-2D are cross sections illustrating an exemplary embodiment of fabricating a substrate structure of the invention; and
  • FIGS. 3A-3E are cross sections illustrating another exemplary embodiment of fabricating a substrate structure of the invention.
  • DETAILED DESCRIPTION OF THE INVENTION
  • The following description is of the best-contemplated mode of carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is best determined by reference to the appended claims.
  • The invention provides a method for transferring inorganic one-dimensional conductive material, such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material on a bendable polymer substrate, serving as an electrode layer or a semiconductor layer. In terms of electrical properties, inorganic electrode materials are superior to conventional organic electrode on polymer substrate, maintaining desired electrical properties and flexibility.
  • FIG. 1 is a flowchart illustrating fabrication steps of an exemplary embodiment of a substrate structure of the invention. In step S20, a substrate for transferring an inorganic electrode pattern is provided. Selections of the substrate are not limited thereto. In step S30, patterned one-dimensional conductor paste and electrode structure are formed on the substrate. The one-dimensional conductive material comprises carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material. For example, the one-dimensional conductive material can be fabricated by arc discharging, chemical vapor deposition (CVD), or laser ablation. The CNT powders are gathered in a container. The gathered one-dimensional conductive materials are mixed into a paste and formed into a patterned electrode structure on the substrate by screen printing.
  • In step S40, a polymer layer is applied overlying the substrate and conformably covering the patterned electrode structure. The polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the substrate and then solidified. In step S50, the polymer layer is released from the substrate and the patterned electrode structure transferred onto the polymer layer.
  • FIGS. 2A-2D are cross sections illustrating an exemplary embodiment of steps for fabricating a substrate structure of the invention. Referring to FIG. 2A, a transferring substrate 100 is provided. Since the transferring substrate 100 is configured as a means for transferring an electrode pattern, the structure and composition of the transferring substrate 100 are not limited thereto. Referring to FIG. 2B, a patterned cathode structure is formed on the transferring substrate 100. The patterned electrode structure can be a planar electrode structure or a stereo electrode structure. For example, a planar parallel electrode structure shown in FIG. 2B comprises a first electrode 112 and a second electrode 114 parallel to each other. The first and second electrodes 112 and 114 comprise one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material. The one-dimensional conductive materials are mixed and blended into paste, and thus printed on the transferring substrate 100.
  • Referring to FIG. 2C, a polymer layer 200 is applied overlying the transferring substrate 100 and conformably covering the patterned cathode structure. For example, the polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the transferring substrate 100 and then solidified. The first and second electrodes 112 and 114 on the transferring substrate 100 are converted on the corresponding first and second electrodes 112′ and 114′ on the polymer layer 200. Referring to FIG. 2D, the polymer layer 200 is released from the transferring substrate 100 and the corresponding electrodes 112′ and 114′ transferred onto the polymer layer 200, whereby the substrate structure is maintained with desired electrical properties and flexibility.
  • FIGS. 3A-3E are cross sections illustrating another exemplary embodiment of steps for fabricating a substrate structure of the invention. Referring to FIG. 3A, a transferring substrate 300 is provided. Since the transferring substrate 300 is configured as a means for transferring an electrode pattern, the structure and composition of the transferring substrate 300 are not limited thereto. An electrode 310 is formed on the transferring substrate 300. The electrode 310 comprises one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material. The one-dimensional conductive materials are mixed and blended into paste, and thus printed on the transferring substrate 100.
  • Referring to FIG. 3B, a stereo convex structure 314 is formed on the transferring substrate 300.
  • Referring to FIG. 3C, an electrode 315 is formed on the stereo convex structure 314. The electrode 315, the stereo convex structure 314 and the electrode 315 are composed of a stereo electrode structure. The stereo electrode structure on the transferring substrate 300 is complementary with the desirable electrode structure on the polymer substrate.
  • Referring to FIG. 3D, a polymer layer 400 is applied overlying the transferring substrate 300 and conformably covering the stereo electrode structure. For example, the polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the transferring substrate 300 and then solidified. The adhesion between the polymer layer 400 and the electrodes 310 and 315 is stronger than the transferring substrate 300 and the electrodes 310 and 315.
  • Referring to FIG. 3E, the polymer layer 400 is released from the transferring substrate 300 and the stereo electrode structure transferred onto the polymer layer 400. Since the adhesion between the polymer layer 400 and the electrodes 310 and 315 is strong, the corresponding electrodes 310′ and 315′ are transferred onto the flexible polymer layer 400. The substrate structure is therefore maintained with desired electrical properties and flexibility. Note that the original stereo electrode structure on the transferring substrate is complementary with the corresponding stereo electrode structure on the polymer layer 400.
  • The substrate structure is applicable to flexible electronic devices, such as radio frequency identification (RFID), flexible printing circuits (FPCs), flexible display devices including organic thin film transistor (OTFT), and field emission display, but is not limited thereto.
  • The invention provides an electrode structure bearing one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material can be indirectly formed on the flexible polymer substrate, thereby maintaining desired electrical properties and flexibility.
  • While the invention has been described by way of example and in terms of preferred embodiment, it is to be understood that the invention is not limited thereto. To the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.

Claims (6)

1-4. (canceled)
5. A method for fabricating a substrate structure, comprising:
providing a first substrate;screen printing an inorganic electrode structure on the first substrate;
applying a bendable substrate on the first substrate covering the inorganic electrode structure;
and releasing the bendable substrate from the first substrate such that the inorganic electrode structure is attached to the bendable substrate.
6. The method for fabricating a substrate structure according to claim 5, wherein screen printing an inorganic electrode structure comprises forming a cathode, an electron emitter, and a gate on the first substrate.
7. The method for fabricating a substrate structure according to claim 5, wherein the inorganic electrode structure is a cathode structure comprising a planar triode structure, a vertical triode structure, or an under-gate triode structure.
8. The method for fabricating a substrate structure according to claim 5, wherein the inorganic electrode structure further comprises carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material.
9. The method for fabricating a substrate structure according to claim 5, wherein the bendable substrate comprises polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), or polymethyl methacrylate (PMMA).
US12/694,231 2006-08-29 2010-01-26 Substrate structures and fabrication methods thereof Abandoned US20100144085A1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019090840A1 (en) * 2017-11-09 2019-05-16 武汉华星光电半导体显示技术有限公司 Flexible display assembly, manufacturing method, and display panel
US10615351B2 (en) 2017-11-09 2020-04-07 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Flexible display assembly including a first inorganic layer formed in bending region having a thickness less than a second inorganic layer formed in non-bending region, a manufacturing method for forming the same, and a display panel

Families Citing this family (4)

* Cited by examiner, † Cited by third party
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TWI478070B (en) * 2012-08-29 2015-03-21 E Ink Holdings Inc Controlling method for coexistence of radio frequency identification and display
CN106935720B (en) * 2017-03-13 2019-06-14 京东方科技集团股份有限公司 Display base plate, display panel, display equipment and the method for manufacturing it
CN112531128A (en) * 2020-11-26 2021-03-19 中国乐凯集团有限公司 Telescopic flexible OLED lighting device and preparation method thereof
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Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6378424B1 (en) * 1993-09-21 2002-04-30 Matsushita Electric Industrial Co., Ltd. Electronic part fabricated by intaglio printing and a method for fabricating the same
US20020050769A1 (en) * 1997-02-07 2002-05-02 Sri International Electroactive polymer electrodes
US20020171081A1 (en) * 2001-03-19 2002-11-21 Vincent John B. Electrochromic display device and compositions useful in making such devices
US20030141473A1 (en) * 2002-01-31 2003-07-31 Pelrine Ronald E. Devices and methods for controlling fluid flow using elastic sheet deflection
US6686827B2 (en) * 2001-03-28 2004-02-03 Protectronics Technology Corporation Surface mountable laminated circuit protection device and method of making the same
US20040041154A1 (en) * 2002-09-04 2004-03-04 Fuji Xerox Co., Ltd. Electric part and method of manufacturing the same
US20040099438A1 (en) * 2002-05-21 2004-05-27 Arthur David J. Method for patterning carbon nanotube coating and carbon nanotube wiring
US6871396B2 (en) * 2000-02-09 2005-03-29 Matsushita Electric Industrial Co., Ltd. Transfer material for wiring substrate
US20060274047A1 (en) * 2005-06-02 2006-12-07 Eastman Kodak Company Touchscreen with one carbon nanotube conductive layer
US20070105250A1 (en) * 2004-03-29 2007-05-10 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
US20080052904A1 (en) * 2004-07-28 2008-03-06 Reinhard Schneider Method Of Manufacturing An Electronic Circuit Assembly
US7401758B2 (en) * 2003-06-06 2008-07-22 Sipix Imaging, Inc. In mold manufacture of an object with embedded display panel

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6891317B2 (en) * 2001-05-22 2005-05-10 Sri International Rolled electroactive polymers
CA2764307C (en) * 2001-06-29 2015-03-03 Meso Scale Technologies, Llc. Assay plates, reader systems and methods for luminescence test measurements
TWI230029B (en) 2002-02-20 2005-03-21 Mektec Corp Process for massively producing tape type flexible printed circuits
AU2003278461A1 (en) * 2002-10-16 2004-05-04 Cellectricon Ab Nanoelectrodes and nanotips for recording transmembrane currents in a plurality of cells
US7150801B2 (en) * 2003-02-26 2006-12-19 Mitsubishi Gas Chemical Company, Inc. Process for producing cold field-emission cathodes
US20050000565A1 (en) * 2003-05-22 2005-01-06 Tingying Zeng Self-assembly methods for the fabrication of McFarland-Tang photovoltaic devices
WO2005008800A1 (en) * 2003-07-16 2005-01-27 Philips Intellectual Property & Standards Gmbh Electroluminescent device with homogeneous brightness
JP4325479B2 (en) * 2003-07-17 2009-09-02 セイコーエプソン株式会社 Organic transistor manufacturing method, active matrix device manufacturing method, display device manufacturing method, and electronic device manufacturing method

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6378424B1 (en) * 1993-09-21 2002-04-30 Matsushita Electric Industrial Co., Ltd. Electronic part fabricated by intaglio printing and a method for fabricating the same
US20020050769A1 (en) * 1997-02-07 2002-05-02 Sri International Electroactive polymer electrodes
US6871396B2 (en) * 2000-02-09 2005-03-29 Matsushita Electric Industrial Co., Ltd. Transfer material for wiring substrate
US20020171081A1 (en) * 2001-03-19 2002-11-21 Vincent John B. Electrochromic display device and compositions useful in making such devices
US6686827B2 (en) * 2001-03-28 2004-02-03 Protectronics Technology Corporation Surface mountable laminated circuit protection device and method of making the same
US20030141473A1 (en) * 2002-01-31 2003-07-31 Pelrine Ronald E. Devices and methods for controlling fluid flow using elastic sheet deflection
US20040099438A1 (en) * 2002-05-21 2004-05-27 Arthur David J. Method for patterning carbon nanotube coating and carbon nanotube wiring
US20040041154A1 (en) * 2002-09-04 2004-03-04 Fuji Xerox Co., Ltd. Electric part and method of manufacturing the same
US7401758B2 (en) * 2003-06-06 2008-07-22 Sipix Imaging, Inc. In mold manufacture of an object with embedded display panel
US20070105250A1 (en) * 2004-03-29 2007-05-10 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
US7476557B2 (en) * 2004-03-29 2009-01-13 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
US20080052904A1 (en) * 2004-07-28 2008-03-06 Reinhard Schneider Method Of Manufacturing An Electronic Circuit Assembly
US20060274047A1 (en) * 2005-06-02 2006-12-07 Eastman Kodak Company Touchscreen with one carbon nanotube conductive layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019090840A1 (en) * 2017-11-09 2019-05-16 武汉华星光电半导体显示技术有限公司 Flexible display assembly, manufacturing method, and display panel
US10615351B2 (en) 2017-11-09 2020-04-07 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Flexible display assembly including a first inorganic layer formed in bending region having a thickness less than a second inorganic layer formed in non-bending region, a manufacturing method for forming the same, and a display panel

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