US20100144085A1 - Substrate structures and fabrication methods thereof - Google Patents
Substrate structures and fabrication methods thereof Download PDFInfo
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- US20100144085A1 US20100144085A1 US12/694,231 US69423110A US2010144085A1 US 20100144085 A1 US20100144085 A1 US 20100144085A1 US 69423110 A US69423110 A US 69423110A US 2010144085 A1 US2010144085 A1 US 2010144085A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000004698 Polyethylene Substances 0.000 claims abstract description 10
- 239000004642 Polyimide Substances 0.000 claims abstract description 10
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 10
- 229920000573 polyethylene Polymers 0.000 claims abstract description 10
- 229920001721 polyimide Polymers 0.000 claims abstract description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 10
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002134 carbon nanofiber Substances 0.000 claims abstract description 8
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 8
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 8
- -1 polyethylene Polymers 0.000 claims abstract description 5
- 238000007650 screen-printing Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 description 19
- 229920000642 polymer Polymers 0.000 description 17
- 229920000307 polymer substrate Polymers 0.000 description 9
- 238000005266 casting Methods 0.000 description 3
- 229920005570 flexible polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/207—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a prefabricated paste pattern, ink pattern or powder pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0251—Non-conductive microfibers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/026—Nanotubes or nanowires
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0147—Carriers and holders
- H05K2203/016—Temporary inorganic, non-metallic carrier, e.g. for processing or transferring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Definitions
- the invention relates to substrate structures and fabrication methods thereof, and more particularly to bendable polymer substrate with inorganic electrode structures and fabrication methods thereof.
- substrates have to be bendable and flexible in order to fit in non-planar base or portable applications unsuited to use of conventional hard substrate structures.
- Organic or polymer flexible substrate structures more specifically, with one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material have to be formed at above 400° C. -500° C.
- Flexible soft substrates cannot sustain the high temperature process, thus inorganic electrode structures cannot be directly formed on an organic polymer substrate.
- organic conductive materials such as polyethylenedioxythiophene (PEDOT) on polymer substrate.
- PEDOT polyethylenedioxythiophene
- the inorganic conductive materials are also more durable than the organic conductive materials. It is difficult to directly form inorganic conductive materials on a polymer substrate. Therefore, conventional organic conductive materials on polymer substrate cannot meet requirements of flexibility, electrical properties and durability.
- the invention is directed to inorganic one-dimensional linear conductive materials on bendable and flexible polymer substrate structures, thereby maintaining required electrical properties and flexibility.
- the invention provides a substrate structure comprising a bendable substrate and an inorganic electrode structure thereon, wherein the inorganic electrode structure comprises a conductive layer or a semiconductor layer.
- the invention further provides a method for fabricating a substrate structure.
- a first substrate is provided.
- An inorganic electrode structure is formed on the first substrate by screen printing.
- a bendable polymer substrate is applied on the first substrate covering the inorganic electrode structure. The bendable polymer substrate is released from the first substrate such that the inorganic electrode structure is attached to the bendable substrate.
- FIG. 1 is a flowchart illustrating an exemplary embodiment of fabrication of an organic polymer substrate structure of the invention
- FIGS. 2A-2D are cross sections illustrating an exemplary embodiment of fabricating a substrate structure of the invention.
- FIGS. 3A-3E are cross sections illustrating another exemplary embodiment of fabricating a substrate structure of the invention.
- the invention provides a method for transferring inorganic one-dimensional conductive material, such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material on a bendable polymer substrate, serving as an electrode layer or a semiconductor layer.
- inorganic electrode materials are superior to conventional organic electrode on polymer substrate, maintaining desired electrical properties and flexibility.
- FIG. 1 is a flowchart illustrating fabrication steps of an exemplary embodiment of a substrate structure of the invention.
- a substrate for transferring an inorganic electrode pattern is provided. Selections of the substrate are not limited thereto.
- patterned one-dimensional conductor paste and electrode structure are formed on the substrate.
- the one-dimensional conductive material comprises carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material.
- the one-dimensional conductive material can be fabricated by arc discharging, chemical vapor deposition (CVD), or laser ablation.
- the CNT powders are gathered in a container.
- the gathered one-dimensional conductive materials are mixed into a paste and formed into a patterned electrode structure on the substrate by screen printing.
- step S 40 a polymer layer is applied overlying the substrate and conformably covering the patterned electrode structure.
- the polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the substrate and then solidified.
- step S 50 the polymer layer is released from the substrate and the patterned electrode structure transferred onto the polymer layer.
- FIGS. 2A-2D are cross sections illustrating an exemplary embodiment of steps for fabricating a substrate structure of the invention.
- a transferring substrate 100 is provided. Since the transferring substrate 100 is configured as a means for transferring an electrode pattern, the structure and composition of the transferring substrate 100 are not limited thereto.
- a patterned cathode structure is formed on the transferring substrate 100 .
- the patterned electrode structure can be a planar electrode structure or a stereo electrode structure.
- a planar parallel electrode structure shown in FIG. 2B comprises a first electrode 112 and a second electrode 114 parallel to each other.
- the first and second electrodes 112 and 114 comprise one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material.
- the one-dimensional conductive materials are mixed and blended into paste, and thus printed on the transferring substrate 100 .
- a polymer layer 200 is applied overlying the transferring substrate 100 and conformably covering the patterned cathode structure.
- the polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the transferring substrate 100 and then solidified.
- the first and second electrodes 112 and 114 on the transferring substrate 100 are converted on the corresponding first and second electrodes 112 ′ and 114 ′ on the polymer layer 200 .
- the polymer layer 200 is released from the transferring substrate 100 and the corresponding electrodes 112 ′ and 114 ′ transferred onto the polymer layer 200 , whereby the substrate structure is maintained with desired electrical properties and flexibility.
- FIGS. 3A-3E are cross sections illustrating another exemplary embodiment of steps for fabricating a substrate structure of the invention.
- a transferring substrate 300 is provided. Since the transferring substrate 300 is configured as a means for transferring an electrode pattern, the structure and composition of the transferring substrate 300 are not limited thereto.
- An electrode 310 is formed on the transferring substrate 300 .
- the electrode 310 comprises one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material.
- the one-dimensional conductive materials are mixed and blended into paste, and thus printed on the transferring substrate 100 .
- a stereo convex structure 314 is formed on the transferring substrate 300 .
- an electrode 315 is formed on the stereo convex structure 314 .
- the electrode 315 , the stereo convex structure 314 and the electrode 315 are composed of a stereo electrode structure.
- the stereo electrode structure on the transferring substrate 300 is complementary with the desirable electrode structure on the polymer substrate.
- a polymer layer 400 is applied overlying the transferring substrate 300 and conformably covering the stereo electrode structure.
- the polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the transferring substrate 300 and then solidified.
- the adhesion between the polymer layer 400 and the electrodes 310 and 315 is stronger than the transferring substrate 300 and the electrodes 310 and 315 .
- the polymer layer 400 is released from the transferring substrate 300 and the stereo electrode structure transferred onto the polymer layer 400 . Since the adhesion between the polymer layer 400 and the electrodes 310 and 315 is strong, the corresponding electrodes 310 ′ and 315 ′ are transferred onto the flexible polymer layer 400 . The substrate structure is therefore maintained with desired electrical properties and flexibility. Note that the original stereo electrode structure on the transferring substrate is complementary with the corresponding stereo electrode structure on the polymer layer 400 .
- the substrate structure is applicable to flexible electronic devices, such as radio frequency identification (RFID), flexible printing circuits (FPCs), flexible display devices including organic thin film transistor (OTFT), and field emission display, but is not limited thereto.
- RFID radio frequency identification
- FPCs flexible printing circuits
- OFT organic thin film transistor
- field emission display but is not limited thereto.
- the invention provides an electrode structure bearing one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material can be indirectly formed on the flexible polymer substrate, thereby maintaining desired electrical properties and flexibility.
- one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material
Abstract
Substrate structures and fabrication methods thereof. A substrate structure includes a bendable substrate and an inorganic electrode structure on the bendable structure, wherein the inorganic electrode structure includes a conductive layer or a semiconductor layer. The inorganic electrode structure includes carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material. The bendable substrate includes polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), or polymethyl methacrylate (PMMA).
Description
- 1. Field of the Invention
- The invention relates to substrate structures and fabrication methods thereof, and more particularly to bendable polymer substrate with inorganic electrode structures and fabrication methods thereof.
- 2. Description of the Related Art
- In some electronic device applications, substrates have to be bendable and flexible in order to fit in non-planar base or portable applications unsuited to use of conventional hard substrate structures. Organic or polymer flexible substrate structures, more specifically, with one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material have to be formed at above 400° C. -500° C. Flexible soft substrates cannot sustain the high temperature process, thus inorganic electrode structures cannot be directly formed on an organic polymer substrate.
- Conventional flexible electronic devices are achieved by forming organic conductive materials such as polyethylenedioxythiophene (PEDOT) on polymer substrate. However, the electric properties and stability of the organic conductive materials cannot compete with the inorganic conductive materials. The inorganic conductive materials are also more durable than the organic conductive materials. It is difficult to directly form inorganic conductive materials on a polymer substrate. Therefore, conventional organic conductive materials on polymer substrate cannot meet requirements of flexibility, electrical properties and durability.
- Accordingly, the invention is directed to inorganic one-dimensional linear conductive materials on bendable and flexible polymer substrate structures, thereby maintaining required electrical properties and flexibility.
- The invention provides a substrate structure comprising a bendable substrate and an inorganic electrode structure thereon, wherein the inorganic electrode structure comprises a conductive layer or a semiconductor layer.
- The invention further provides a method for fabricating a substrate structure. A first substrate is provided. An inorganic electrode structure is formed on the first substrate by screen printing. A bendable polymer substrate is applied on the first substrate covering the inorganic electrode structure. The bendable polymer substrate is released from the first substrate such that the inorganic electrode structure is attached to the bendable substrate.
- The invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
-
FIG. 1 is a flowchart illustrating an exemplary embodiment of fabrication of an organic polymer substrate structure of the invention; -
FIGS. 2A-2D are cross sections illustrating an exemplary embodiment of fabricating a substrate structure of the invention; and -
FIGS. 3A-3E are cross sections illustrating another exemplary embodiment of fabricating a substrate structure of the invention. - The following description is of the best-contemplated mode of carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is best determined by reference to the appended claims.
- The invention provides a method for transferring inorganic one-dimensional conductive material, such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material on a bendable polymer substrate, serving as an electrode layer or a semiconductor layer. In terms of electrical properties, inorganic electrode materials are superior to conventional organic electrode on polymer substrate, maintaining desired electrical properties and flexibility.
-
FIG. 1 is a flowchart illustrating fabrication steps of an exemplary embodiment of a substrate structure of the invention. In step S20, a substrate for transferring an inorganic electrode pattern is provided. Selections of the substrate are not limited thereto. In step S30, patterned one-dimensional conductor paste and electrode structure are formed on the substrate. The one-dimensional conductive material comprises carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material. For example, the one-dimensional conductive material can be fabricated by arc discharging, chemical vapor deposition (CVD), or laser ablation. The CNT powders are gathered in a container. The gathered one-dimensional conductive materials are mixed into a paste and formed into a patterned electrode structure on the substrate by screen printing. - In step S40, a polymer layer is applied overlying the substrate and conformably covering the patterned electrode structure. The polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the substrate and then solidified. In step S50, the polymer layer is released from the substrate and the patterned electrode structure transferred onto the polymer layer.
-
FIGS. 2A-2D are cross sections illustrating an exemplary embodiment of steps for fabricating a substrate structure of the invention. Referring toFIG. 2A , a transferringsubstrate 100 is provided. Since the transferringsubstrate 100 is configured as a means for transferring an electrode pattern, the structure and composition of the transferringsubstrate 100 are not limited thereto. Referring toFIG. 2B , a patterned cathode structure is formed on the transferringsubstrate 100. The patterned electrode structure can be a planar electrode structure or a stereo electrode structure. For example, a planar parallel electrode structure shown inFIG. 2B comprises afirst electrode 112 and asecond electrode 114 parallel to each other. The first andsecond electrodes substrate 100. - Referring to
FIG. 2C , apolymer layer 200 is applied overlying the transferringsubstrate 100 and conformably covering the patterned cathode structure. For example, the polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the transferringsubstrate 100 and then solidified. The first andsecond electrodes substrate 100 are converted on the corresponding first andsecond electrodes 112′ and 114′ on thepolymer layer 200. Referring toFIG. 2D , thepolymer layer 200 is released from the transferringsubstrate 100 and thecorresponding electrodes 112′ and 114′ transferred onto thepolymer layer 200, whereby the substrate structure is maintained with desired electrical properties and flexibility. -
FIGS. 3A-3E are cross sections illustrating another exemplary embodiment of steps for fabricating a substrate structure of the invention. Referring toFIG. 3A , a transferringsubstrate 300 is provided. Since the transferringsubstrate 300 is configured as a means for transferring an electrode pattern, the structure and composition of the transferringsubstrate 300 are not limited thereto. Anelectrode 310 is formed on the transferringsubstrate 300. Theelectrode 310 comprises one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material. The one-dimensional conductive materials are mixed and blended into paste, and thus printed on the transferringsubstrate 100. - Referring to
FIG. 3B , a stereoconvex structure 314 is formed on the transferringsubstrate 300. - Referring to
FIG. 3C , anelectrode 315 is formed on the stereoconvex structure 314. Theelectrode 315, the stereoconvex structure 314 and theelectrode 315 are composed of a stereo electrode structure. The stereo electrode structure on the transferringsubstrate 300 is complementary with the desirable electrode structure on the polymer substrate. - Referring to
FIG. 3D , apolymer layer 400 is applied overlying the transferringsubstrate 300 and conformably covering the stereo electrode structure. For example, the polymer layer is formed by casting chemical solution comprising polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA) on the transferringsubstrate 300 and then solidified. The adhesion between thepolymer layer 400 and theelectrodes substrate 300 and theelectrodes - Referring to
FIG. 3E , thepolymer layer 400 is released from the transferringsubstrate 300 and the stereo electrode structure transferred onto thepolymer layer 400. Since the adhesion between thepolymer layer 400 and theelectrodes electrodes 310′ and 315′ are transferred onto theflexible polymer layer 400. The substrate structure is therefore maintained with desired electrical properties and flexibility. Note that the original stereo electrode structure on the transferring substrate is complementary with the corresponding stereo electrode structure on thepolymer layer 400. - The substrate structure is applicable to flexible electronic devices, such as radio frequency identification (RFID), flexible printing circuits (FPCs), flexible display devices including organic thin film transistor (OTFT), and field emission display, but is not limited thereto.
- The invention provides an electrode structure bearing one-dimensional conductive materials such as carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material can be indirectly formed on the flexible polymer substrate, thereby maintaining desired electrical properties and flexibility.
- While the invention has been described by way of example and in terms of preferred embodiment, it is to be understood that the invention is not limited thereto. To the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.
Claims (6)
1-4. (canceled)
5. A method for fabricating a substrate structure, comprising:
providing a first substrate;screen printing an inorganic electrode structure on the first substrate;
applying a bendable substrate on the first substrate covering the inorganic electrode structure;
and releasing the bendable substrate from the first substrate such that the inorganic electrode structure is attached to the bendable substrate.
6. The method for fabricating a substrate structure according to claim 5 , wherein screen printing an inorganic electrode structure comprises forming a cathode, an electron emitter, and a gate on the first substrate.
7. The method for fabricating a substrate structure according to claim 5 , wherein the inorganic electrode structure is a cathode structure comprising a planar triode structure, a vertical triode structure, or an under-gate triode structure.
8. The method for fabricating a substrate structure according to claim 5 , wherein the inorganic electrode structure further comprises carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material.
9. The method for fabricating a substrate structure according to claim 5 , wherein the bendable substrate comprises polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), or polymethyl methacrylate (PMMA).
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US12/694,231 US20100144085A1 (en) | 2006-08-29 | 2010-01-26 | Substrate structures and fabrication methods thereof |
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TW095131702A TWI328984B (en) | 2006-08-29 | 2006-08-29 | Substrate structures and fabrication methods thereof |
US11/625,791 US7679081B2 (en) | 2006-08-29 | 2007-01-22 | Substrate structures and fabrication methods thereof |
US12/694,231 US20100144085A1 (en) | 2006-08-29 | 2010-01-26 | Substrate structures and fabrication methods thereof |
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WO2019090840A1 (en) * | 2017-11-09 | 2019-05-16 | 武汉华星光电半导体显示技术有限公司 | Flexible display assembly, manufacturing method, and display panel |
US10615351B2 (en) | 2017-11-09 | 2020-04-07 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Flexible display assembly including a first inorganic layer formed in bending region having a thickness less than a second inorganic layer formed in non-bending region, a manufacturing method for forming the same, and a display panel |
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TWI478070B (en) * | 2012-08-29 | 2015-03-21 | E Ink Holdings Inc | Controlling method for coexistence of radio frequency identification and display |
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Citations (12)
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US10615351B2 (en) | 2017-11-09 | 2020-04-07 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Flexible display assembly including a first inorganic layer formed in bending region having a thickness less than a second inorganic layer formed in non-bending region, a manufacturing method for forming the same, and a display panel |
Also Published As
Publication number | Publication date |
---|---|
TWI328984B (en) | 2010-08-11 |
US20080054255A1 (en) | 2008-03-06 |
US7679081B2 (en) | 2010-03-16 |
TW200812453A (en) | 2008-03-01 |
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