US20100012389A1 - Methods of forming polycrystalline diamond cutters - Google Patents
Methods of forming polycrystalline diamond cutters Download PDFInfo
- Publication number
- US20100012389A1 US20100012389A1 US12/505,297 US50529709A US2010012389A1 US 20100012389 A1 US20100012389 A1 US 20100012389A1 US 50529709 A US50529709 A US 50529709A US 2010012389 A1 US2010012389 A1 US 2010012389A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- polycrystalline
- diamond
- cavity
- abrasive body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 62
- 239000010432 diamond Substances 0.000 title claims description 162
- 229910003460 diamond Inorganic materials 0.000 title claims description 161
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 238000005520 cutting process Methods 0.000 claims abstract description 42
- 230000013011 mating Effects 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 92
- 239000003054 catalyst Substances 0.000 claims description 43
- 239000000843 powder Substances 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 16
- 238000002386 leaching Methods 0.000 claims description 14
- 229910052582 BN Inorganic materials 0.000 claims description 13
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 13
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 10
- 239000002243 precursor Substances 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 17
- 239000002904 solvent Substances 0.000 description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000037361 pathway Effects 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 238000004901 spalling Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 206010035148 Plague Diseases 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- -1 other ceramics Chemical compound 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Images
Classifications
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B10/00—Drill bits
- E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts
- E21B10/56—Button-type inserts
- E21B10/567—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
- E21B10/573—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts characterised by support details, e.g. the substrate construction or the interface between the substrate and the cutting element
- E21B10/5735—Interface between the substrate and the cutting element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D99/00—Subject matter not provided for in other groups of this subclass
- B24D99/005—Segments of abrasive wheels
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B10/00—Drill bits
- E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts
- E21B10/56—Button-type inserts
- E21B10/567—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
- E21B10/573—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts characterised by support details, e.g. the substrate construction or the interface between the substrate and the cutting element
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mining & Mineral Resources (AREA)
- Geology (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Fluid Mechanics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Earth Drilling (AREA)
Abstract
A method for forming a cutting element that includes forming at least one cavity in at least one surface of a polycrystalline abrasive body; placing the polycrystalline abrasive body adjacent a substrate such that an opening of at least one cavity is adjacent the substrate at an interface, wherein an interface surface of the substrate is non-mating with the polycrystalline abrasive body; and subjecting the polycrystalline abrasive body and substrate to high pressure/high temperature conditions is disclosed.
Description
- This application claims priority, under 35 U.S.C. §119, to U.S. Patent Application No. 61/081,619, filed on Jul. 17, 2008, which is herein incorporated by reference in its entirety.
- 1. Field of the Invention
- The invention relates generally to polycrystalline diamond composites and cutting structures. More particularly, this invention relates to polycrystalline diamond cutting structures that having non-planar interfaces and method of forming such non-planar interfaces.
- 2. Background Art
- Polycrystalline diamond compact (“PDC”) cutters have been used in industrial applications including rock drilling and metal machining for many years. In a typical application, a compact of polycrystalline diamond (PCD) (or other superhard material) is bonded to a substrate material, which is typically a sintered metal-carbide to form a cutting structure. PCD comprises a polycrystalline mass of diamonds (typically synthetic) that are bonded together to form an integral, tough, high-strength mass or lattice. The resulting PCD structure produces enhanced properties of wear resistance and hardness, making PCD materials extremely useful in aggressive wear and cutting applications where high levels of wear resistance and hardness are desired.
- A PDC cutter may be formed by placing a cemented carbide substrate into the container of a press. A mixture of diamond grains or diamond grains and catalyst binder is placed atop the substrate and treated under high pressure, high temperature conditions. In doing so, metal binder (often cobalt) migrates from the substrate and passes through the diamond grains to promote intergrowth between the diamond grains. As a result, the diamond grains become bonded to each other to form the diamond layer, and the diamond layer is in turn bonded to the substrate. The substrate often comprises a metal-carbide composite material, such as tungsten carbide. The deposited diamond layer is often referred to as the “diamond table” or “abrasive layer.”
- An example of a drag bit for earth formation drilling using PDC cutters is shown in
FIG. 1 .FIG. 1 shows arotary drill bit 10 having a bit body 12. The lower face of the bit body 12 is formed with a plurality ofblades 14, which extend generally outwardly away from a central longitudinal axis ofrotation 16 of the drill bit. A plurality ofPDC cutters 18 are disposed side by side along the length of each blade. The number ofPDC cutters 18 carried by each blade may vary. ThePDC cutters 18 are individually brazed to a stud-like carrier (or substrate), which may be formed from tungsten carbide, and are received and secured within sockets in the respective blade. - Common problems that plague cutting elements and specifically cutters having an ultra hard diamond-like cutting table such as PCD, polycrystalline cubic boron nitride (PCBN), or thermally stable polycrystalline diamond (TSP) bonded on a cemented carbide substrate are chipping, spalling, partial fracturing, cracking or exfoliation of the cutting table. These problems result in the early failure of the cutting table and thus, in a shorter operating life for the cutter.
- It has been thought that these problems, i.e., chipping, spalling, partial fracturing, cracking, and exfoliation of the diamond layer may be caused in part by the difference in the coefficient of thermal expansion between the diamond and the substrate. Specifically, the problems are thought to be caused by the abrupt shift in the coefficient of thermal expansion on the interface between the substrate and the diamond. This abrupt shift causes the build-up of residual stresses on the cutting layer.
- The cemented carbide substrate has a higher coefficient of thermal expansion than the diamond. During sintering, both the cemented carbide body and diamond layer are heated to elevated temperatures forming a bond between the diamond layer and the cemented carbide substrate. As the diamond layer and substrate cool down, the substrate shrinks more than the diamond because of its higher coefficient of thermal expansion. Consequently, stresses referred to as thermally induced stresses are formed at the interface between the diamond and the body.
- Moreover, residual stresses are formed on the diamond layer from decompression after sintering. The high pressure applied during the sintering process causes the carbide to compress more than the diamond layer. After the diamond is sintered onto the carbide and the pressure is removed, the carbide tries to expand more than the diamond imposing a tensile residual stress on the diamond layer.
- In an attempt to overcome these problems, many have turned to use of non-planar interfaces between the substrate and the cutting layer. The belief being, that a non-planar interface allows for a more gradual shift in the coefficient of thermal expansion from the substrate to the diamond table, thus, reducing the magnitude of the residual stresses on the diamond. Similarly, it is believed that the non-planar interface allow for a more gradual shift in the compression from the diamond layer to the carbide substrate.
- Accordingly, there exists a continuing need for developments in non-planar interfaces, and methods of forming non-planar interfaces, for cutting elements having a polycrystalline abrasive cutting layer attached to a substrate.
- In one aspect, embodiments disclosed herein relate to a method for forming a cutting element that includes forming at least one cavity in at least one surface of a polycrystalline abrasive body; placing the polycrystalline abrasive body adjacent a substrate such that an opening of at least one cavity is adjacent the substrate at an interface, wherein an interface surface of the substrate is non-mating with the polycrystalline abrasive body; and subjecting the polycrystalline abrasive body and substrate to high pressure/high temperature conditions.
- In another aspect, embodiments disclosed herein relate to a method for forming a cutting element that includes forming a polycrystalline diamond compact of a polycrystalline diamond body attached to a substrate, where the formation of the polycrystalline diamond compact includes placing a mixture of diamond particles and a catalyst material adjacent a substrate; and subjecting the mixture and substrate to high-pressure/high temperature conditions; then, once the polycrystalline diamond compact is formed, detaching the polycrystalline diamond body from the substrate; forming at least one cavity in at least one surface of the detached polycrystalline diamond body; placing the polycrystalline abrasive body adjacent a substrate material such that an opening of at least one cavity is adjacent the substrate material; and subjecting the polycrystalline abrasive body and substrate material to high temperature/high pressure conditions.
- In another aspect, embodiments disclosed herein relate to a method for forming a cutting element that includes forming at least one cavity in at least one surface of a polycrystalline abrasive body; placing the polycrystalline abrasive body adjacent a substrate precursor material such that an opening of at least one cavity is adjacent the substrate precursor; and subjecting the polycrystalline abrasive body and substrate precursor materials to high pressure/high temperature conditions.
- In another aspect, embodiments disclosed herein relate to a cutting element that includes a polycrystalline abrasive body; and a substrate attached to the polycrystalline abrasive body, wherein the polycrystalline abrasive body comprises, at the interface between the polycrystalline abrasive body and the substrate, at least one cavity formed therein, the at least one cavity having an opening with at least one dimension of less than 1 mm; and wherein the substrate comprises at least one projection mating the at least one cavity.
- In yet another aspect, embodiments disclosed herein relate to a cutting element that includes a polycrystalline abrasive body; and a substrate attached to the polycrystalline abrasive body, wherein the polycrystalline abrasive body comprises, at the interface between the polycrystalline abrasive body and the substrate, at least one cavity formed therein; and wherein the substrate comprises at least one projection mating the at least one cavity, the at least one projection comprising a material composition distinct from the remaining substrate.
- Other aspects and advantages of the invention will be apparent from the following description and the appended claims.
-
FIG. 1 is an illustration of a PDC drill bit. -
FIGS. 2A-2E show cross-sectional side views of various embodiments of the present disclosure. -
FIGS. 3A-3B show top views of various embodiments of the present disclosure. -
FIGS. 4A-4C is an illustration of steps for forming a PDC cutter in accordance with an embodiment of the present disclosure. -
FIGS. 5A-5D is an illustration of steps for forming a PDC cutter in accordance with an embodiment of the present disclosure. -
FIGS. 6A-6E is an illustration of steps for forming a PDC cutter in accordance with an embodiment of the present disclosure. - In one aspect, embodiments disclosed herein relate to polycrystalline diamond (or other polycrystalline abrasive bodied) cutting elements and methods of forming non-planar interfaces between the polycrystalline diamond layer and a substrate. More specifically, embodiments disclosed herein are directed to non-planar interfaces resulting from forming cavities in a polycrystalline abrasive body and attaching the body to a substrate.
- As used herein, the term “PCD” refers to polycrystalline diamond that has been formed, at high pressure/high temperature (HPHT) conditions, through the use of a solvent metal catalyst, such as those included in Group VIII of the Periodic table. However, the present disclosure is also directed to polycrystalline cubic boron nitride (formed from subjecting boron nitride particles to HPHT conditions) as well as thermally stable polycrystalline diamond. The term “thermally stable polycrystalline diamond,” as used herein, refers to intercrystalline bonded diamond that includes a volume or region that has been rendered substantially free of the solvent metal catalyst used to form PCD, or the solvent metal catalyst used to form PCD remains in the region of the diamond body but is otherwise reacted or rendered ineffective in its ability to adversely impact the bonded diamond at elevated temperatures as discussed above.
- Forming Polycrystalline Abrasive Bodies
- A polycrystalline diamond body may be formed in a conventional manner, such as by a high pressure, high temperature sintering of “green” particles to create intercrystalline bonding between the particles. “Sintering” may involve a high pressure, high temperature (HPHT) process. Examples of high pressure, high temperature (HPHT) process can be found, for example, in U.S. Pat. Nos. 4,694,918; 5,370,195; and 4,525,178. Briefly, to form the polycrystalline diamond object, an unsintered mass of diamond crystalline particles is placed within a metal enclosure of the reaction cell of a HPHT apparatus. A suitable HPHT apparatus for this process is described in U.S. Pat. Nos. 2,947,611; 2,941,241; 2,941,248; 3,609,818; 3,767,371; 4,289,503; 4,673,414; and 4,954,139. A metal catalyst, such as cobalt or other Group VIII metals, may be included with the unsintered mass of crystalline particles to promote intercrystalline diamond-to-diamond bonding. The catalyst material may be provided in the form of powder and mixed with the diamond grains, or may be infiltrated into the diamond grains during HPHT sintering An exemplary minimum temperature is about 1200° C. and an exemplary minimum pressure is about 35 kilobars. Typical processing is at a pressure of about 45 kbar and 1300° C. Those of ordinary skill will appreciate that a variety of temperatures and pressures may be used, and the scope of the present invention is not limited to specifically referenced temperatures and pressures.
- Diamond grains useful for forming a polycrystalline diamond body may include any type of diamond particle, including natural or synthetic diamond powders having a wide range of grain sizes. For example, such diamond powders may have an average grain size in the range from submicrometer in size to 100 micrometers, and from 1 to 80 micrometers in other embodiments. Further, one skilled in the art would appreciate that the diamond powder may include grains having a mono- or multi-modal distribution.
- Moreover, the diamond powder used to prepare the PCD body may be synthetic diamond powder or natural diamond powder. Synthetic diamond powder is known to include small amounts of solvent metal catalyst material and other materials entrained within the diamond crystals themselves. Unlike synthetic diamond powder, natural diamond powder does not include such solvent metal catalyst material and other materials entrained within the diamond crystals. It is theorized that that inclusion of materials other than the solvent catalyst in the synthetic diamond powder can operate to impair or limit the extent to which the resulting PCD body can be rendered thermally stable, as these materials along with the solvent catalyst must also be removed or otherwise neutralized. Because natural diamond is largely devoid of these other materials, such materials do not have to be removed from the PCD body and a higher degree of thermal stability may thus be obtained. Accordingly, for applications calling for a particularly high degree of thermal stability, one skilled in the art would appreciate that the use of natural diamond for forming the PCD body may be preferred. The diamond grain powder, whether synthetic or natural, may be combined with or already includes a desired amount of catalyst material to facilitate desired intercrystalline diamond bonding during HPHT processing. Suitable catalyst materials useful for forming the PCD body include those solvent metals selected from the Group VIII of the Periodic table, with cobalt (Co) being the most common, and mixtures or alloys of two or more of these materials. In a particular embodiment, the diamond grain powder and catalyst material mixture may comprise 85 to 95% by volume diamond grain powder and the remaining amount catalyst material. Alternatively, the diamond grain powder can be used without adding a solvent metal catalyst in applications where the solvent metal catalyst can be provided by infiltration during HPHT processing from the adjacent substrate or adjacent other body to be bonded to the PCD body.
- The diamond powder may be combined with the desired catalyst material, and the reaction cell is then placed under processing conditions sufficient to cause the intercrystalline bonding between the diamond particles. In the event that the formation of a PCD compact comprising a substrate bonded to the PCD body is desired, a selected substrate is loaded into the container adjacent the diamond powder mixture prior to HPHT processing. Additionally, in the event that the PCD body is to be bonded to a substrate, and the substrate includes a metal solvent catalyst, the metal solvent catalyst needed for catalyzing intercrystalline bonding of the diamond may be provided by infiltration, in which case is may not be necessary to mix the diamond powder with a metal solvent catalyst prior to HPHT processing.
- In an example embodiment, the device is controlled so that the container is subjected to a HPHT process comprising a pressure in the range of from 5 to 7 GPa and a temperature in the range of from about 1320 to 1600° C., for a sufficient period of time. During this HPHT process, the catalyst material in the mixture melts and infiltrates the diamond grain powder to facilitate intercrystalline diamond bonding. During the formation of such intercrystalline diamond bonding, the catalyst material may migrate into the interstitial regions within the microstructure of the so-formed PCD body that exists between the diamond bonded grains It should be noted that if too much additional non-diamond material is present in the powdered mass of crystalline particles, appreciable intercrystalline bonding is prevented during the sintering process. Such a sintered material where appreciable intercrystalline bonding has not occurred is not within the definition of PCD. Following such formation of intercrystalline bonding, a polycrystalline diamond body may be formed that has, in one embodiment, at least about 80 percent by volume diamond, with the remaining balance of the interstitial regions between the diamond grains occupied by the catalyst material. In other embodiments, such diamond content may comprise at least 85 percent by volume of the formed diamond body, and at least 90 percent by volume in yet another embodiment. However, one skilled in the art would appreciate that other diamond densities may be used in alternative embodiments. Thus, the polycrystalline diamond bodies being used in accordance with the present disclosure include what is frequently referred to in the art as “high density” polycrystalline diamond.
- Further, one skilled in the art would appreciate that, frequently, a diamond layer is sintered to a carbide substrate by placing the diamond particles on a preformed substrate in the reaction cell and sintering. However the present disclosure is not so limited. Rather, the polycrystalline diamond bodies having cavities formed in accordance with the present disclosure may or may not be formed attached to a substrate. If the polycrystalline diamond body is formed attached to a carbide substrate, the substrate may be removed or detached from the polycrystalline diamond body so that cavities may be formed therein, and a non-planar interface may result when the diamond body reattached to a substrate.
- In various embodiments, a formed PCD body having a catalyst material in the interstitial spaces between bonded diamond grains is subjected to a leaching process (before or after formation of the cavities), whereby the catalyst material is removed from the PCD body. As used herein, the term “removed” refers to the reduced presence of catalyst material in the PCD body, and is understood to mean that a substantial portion of the catalyst material no longer resides in the PCD body. However, one skilled in the art would appreciate that trace amounts of catalyst material may still remain in the microstructure of the PCD body within the interstitial regions and/or adhered to the surface of the diamond grains. Alternatively, rather than actually removing the catalyst material from the PCD body or compact, the selected region of the PCD body or compact can be rendered thermally stable by treating the catalyst material in a manner that reduces or eliminates the potential for the catalyst material to adversely impact the intercrystalline bonded diamond at elevated temperatures. For example, the catalyst material can be combined chemically with another material to cause it to no longer act as a catalyst material, or can be transformed into another material that again causes it to no longer act as a catalyst material. Accordingly, as used herein, the terms “removing substantially all” or “substantially free” as used in reference to the catalyst material is intended to cover the different methods in which the catalyst material can be treated to no longer adversely impact the intercrystalline diamond in the PCD body or compact with increasing temperature.
- The quantity of the catalyst material remaining in the material PCD microstructure after the PCD body has been subjected to a leaching treatment may vary, for example, on factors such as the treatment conditions, including treatment time, as well as whether the cavities are formed before or after leaching. A U.S. Patent Application entitled “Methods of Forming Thermally Stable Polycrystalline Diamond Cutters,” filed concurrently herewith (Attorney Docket No. 05516/392001), which is assigned to the present assignee and herein incorporated by reference in its entirety, is directed to the use of forming cavities or other acid infusion pathways to reduce leaching times. Further, one skilled in the art would appreciate that it may be desired in certain applications to allow a small amount of catalyst material to stay in the PCD body. In a particular embodiment, the PCD body may include up to 1-2 percent by weight of the catalyst material. However, one skilled in the art would appreciate that the amount of residual catalyst present in a leached PCD body may depend on the diamond density of the material, and body thickness.
- A conventional leaching process involves the exposure of an object to be leached with a leaching agent, such as described in U.S. Pat. No. 4,224,380, which is herein incorporated by reference in its entirety. In select embodiments, the leaching agent may be a weak, strong, or mixtures of acids. In other embodiments, the leaching agent may be a caustic material such as NaOH or KOH. Suitable acids may include, for example, nitric acid, hydrofluoric acid, hydrochloric acid, sulfuric acid, phosphoric acid, or perchloric acid, or combinations of these acids. In addition, caustics, such as sodium hydroxide and potassium hydroxide, have been used to the carbide industry to digest metallic elements from carbide composites. In addition, other acidic and basic leaching agents may be used as desired. Those having ordinary skill in the art will appreciate that the molarity of the leaching agent may be adjusted depending on the time desired to leach, concerns about hazards, etc.
- Further, one skilled in the art would appreciate that the same techniques used with polycrystalline diamond may be applied to polycrystalline cubic boron nitride (PCBN). Similar to polycrystalline diamond, PCBN may be formed by sintering boron nitride particles (typically CBN) via a HPHT process, similar to those for PCD, to sinter “green” particles to create intercrystalline bonding between the particles. CBN refers to an internal crystal structure of boron atoms and nitrogen atoms in which the equivalent lattice points are at the corner of each cell. Boron nitride particles typically have a diameter of approximately one micron and appear as a white powder. Boron nitride, when initially formed, has a generally graphite-like, hexagonal plate structure. When compressed at high pressures (such as 106 psi), CBN particles will be formed with a hardness very similar to diamond, and a stability in air at temperatures of up to 1400° C.
- According to one embodiment of the invention, PCBN may include a content of boron nitride of at least 50% by volume; at least 70% by volume in another embodiment; at least 85% by volume in yet another embodiment. In another embodiment, the cubic boron nitride content may range from 50 to 80 percent by volume, and from 80 to 99.9 percent by volume in yet another embodiment. The residual content of the polycrystalline cubic boron nitride composite may include at least one of Al, Si, and mixtures thereof, carbides, nitrides, carbonitrides and borides of Group IVa, Va, and VIa transition metals of the periodic table. Mixtures and solid solutions of Al, Si, carbides, nitrides, carbonitrides and borides of Group IVa, Va, and VIa transition metals of the periodic table may also be included.
- Formation on Non-Planar Interface
- Thus, formation of a cutting element having a non-planar interface between the abrasive cutting layer and substrate may involve any of the above-described abrasive bodies. Conventionally, formation of a non-planar interface involves forming such geometry in the substrate, and combining the substrate with diamond (or other super hard) particles in a reaction can and subjecting the can contents to HPHT conditions to form the polycrystalline structure. However, the techniques of the present disclosure rely on forming a desired geometry (cavity) in a pre-formed polycrystalline layer, and then attaching the polycrystalline layer with desired interface geometry to a substrate (or forming the substrate attached to the polycrystalline layer having the desired geometry).
- Cavities formed by removal of PCD material may include partial cavities (cavities extending partially into the diamond layer) and/or through-cavities or channels (cavities extending the entire thickness of the diamond layer). Such cavities may be formed using any technique known in the art of cutting diamond, including, for example, methods such as EDM, laser micro machining, ion beam milling (also referred to as ion bombardment etching), etc. Alternatively, the cavity may be formed by incorporation of an aiding material into the diamond mixture prior to sintering, where the aiding material may be removed by chemical or physical methods prior to leaching, such that once subsequently removed, cavities are present in the polycrystalline diamond body. For example, a tungsten carbide aiding material may be formed in the diamond body, and then subsequently removed by machining or other physical methods so that a cavity remains in the diamond body to allow for the formation of the non-planar interface. Further, aiding materials other than tungsten carbide, such as other ceramics, may also easily be used so long as the aiding material is removable by physical or chemical methods. Use of such an aiding material may be desirable if the aiding material is more easily removed than cutting diamond.
- Referring to
FIGS. 2A-2E , various embodiments ofPCD bodies 30 havingcavities 35 formed therein are shown. As shown inFIG. 2A ,cavities 35 are through-cavities or channels, extending the entire thickness or depth ofPCD body 30, from atop surface 31 to abottom surface 33. InFIG. 2B ,cavities 35 are partial cavities, extending partially from bottom surface 33 a depth less thantop surface 31. Moreover, whileFIGS. 2A and 2B showcavities 35 formed perpendicular tosurfaces FIGS. 2C and 2D ,such cavities 35 may extend into or throughPCD body 30 at an angle tosurfaces such cavities 35 may take any geometrical (regular or irregular) shape or form, including for example, having a generally equal or varying (e.g.,cavity 35 may be a dimple as shown inFIGS. 2D and 2E ) diameter along the length of thecavity 35, as well as any peaks, valleys, grooves, ridges, etc., or any other shape that may be formed in a substrate in conventional non-planar interface techniques. Additionally, as shown by comparing the general representative size of thevarious cavities 35 shown inFIGS. 2A-2E ,cavities 35 may be selected to have different general relative dimensions depending, for example, on the methods by which thecavities 35 are being formed, among other design considerations. Thus, in some embodiments, for example, as shown inFIG. 2E , acavity 35 may be selected to have a generally large diameter at the intersection between the cavity and asurface 33 of thePCD body 30, ranging as large as the diameter of the cutter or one-half the diameter of thePCD body 30, or may be smaller as illustrated shown inFIGS. 2A-2D . In particular embodiments, the diameters (or general dimension for non-circular cavity openings) of the cavities may range from millimeter scale (up to 3 mm in some embodiments) to microscale (less than 1 mm and less than 50 microns) to nanoscale (down to 100, 50, or 10 nm in various embodiments). In an even more particular embodiment, cavities of diameter ranging from 10 microns to 1 mm (or to 0.5 mm in another embodiment) may be formed in the diamond body. However, one skilled in the art would appreciate that the selected size may be based on factors such as the size of the PCD body, the techniques by which the cavities are formed, any effect on the material and mechanical properties of the PCD body, etc. It is also within the scope of the present disclosure that various combinations of type, number, shape, size of cavities may be made, such as shown inFIG. 2D . - Moreover, there is also no limit on the placement or pattern of the cavities formed in the PCD body. For example, as shown in
FIGS. 3A and 3B , thepathways 35 may take any regular array of even spaced cavities or form a pattern of concentric circles. However, the cavities may also be randomly distributed across a PCD body. - Further, as mentioned above, while the above discussion has applied to PCD cutting elements or bodies, those having ordinary skill in the art will appreciate that these techniques may be more generally applied to any material that has a need for a non-planar interface. In a particular embodiment, the PCD bodies may be at least 1 mm thick, and at least 1.5 or 2 mm thick in alternate embodiments.
- Further after such “free-standing” PCD bodies are having cavities formed therein, the PCD bodies may then be attached (or reattached) to a substrate and form the non-planar interface, to facilitate attached to a bit, cutting tool, or other end use, for example. Such methods of reattachment may include sintering a PCD body with a substrate in a second HPHT sintering step, such as discussed in U.S. Patent Publication No. 2008/0223623, which is assigned to the present assignee and herein incorporated by reference in its entirety. The HPHT sintering used to attach a diamond body to the substrate may be performed in a similar manner as described above with respect to formation of polycrystalline diamond, but in particular embodiments, such conditions may include a temperature ranging from 1350 to 1500° C. and a pressure ranging from 4 to 7 GPa. When attaching a PCD body to a substrate, the PCD body may be placed such the surface intersecting the openings of the cavities is placed adjacent the substrate. Alternatively, the substrate may be formed during the attachment stage by placing powder for forming the substrate adjacent the surface intersecting the openings of the cavities, and sintering.
- Thus, attachment or (reattachment) of the PCD body to a substrate may be achieved by placing the two pieces together and subjecting the two to sintering conditions to join the two bodies together. In embodiments in which the pathway openings are placed adjacent the substrate upper surface, during and due to the sintering conditions, some amount of carbide materials from the substrate may “bulge” into the open space of the cavities which have been formed in the PCD body, forming mechanical locking known in the art of non-planar interfaces. Alternatively, an intermediate material such as a refractory powder (tungsten or tungsten carbide powder in particular embodiments) may be used to fill at least a portion of the cavities in the PCD, such that the refractory powder will be sintered and bond together with the carbide substrate during the sintering conditions. In some embodiments, the intermediate material may also include diamond particles provided therewith such that a gradient may exist at the non-planar interface. In addition to a mechanical locking, the inclusion of diamond particles in the cavities may also allow for a chemical locking, through the formation of diamond-to-diamond bonds during the HPHT sintering process. Other intermediate materials may also be used.
- In such embodiments, the substrate may have a substantially planar upper surface or may have a non-planar but non-mating upper surface. In the embodiment having the non-planar, but non-mating upper surface to the substrate, a diamond body may have a “larger” cavity than the projections that exist on the substrate upper surface. Thus, while the surfaces are non-mating (defined herein to mean that there is a gap of at least 10% of one dimension of the cavities between a surface of the diamond body and a surface of the substrate), the geometries would align based on location at the interface. Further, in such an embodiment, the intermediate material may be used to fill the gaps between the corresponding cavity and projection to aid in the attachment process. Yet another alternative may rely on addition of substrate precursors (a carbide powder and binder material, such as a Group VIII metal) to the PCD body, forming the substrate body during the attachment process.
- Referring to
FIGS. 4A-4C , collectively, an embodiment of the process steps of the present disclosure is shown. As shown inFIG. 4A , apolycrystalline diamond body 30 may be formed or provided. Alternatively, apolycrystalline diamond body 30 may be formed without a substrate. Formation ofcavities 35 in thepolycrystalline diamond body 30 may be achieved (inFIG. 4B ) as described above. Further, as shown inFIG. 4C , thepolycrystalline diamond body 30 may then be attached (or reattached) to asubstrate 36 through sintering. During this attachment, the openings ofcavities 35 are placed adjacent the substrate so that after reattachment sintering, a non-planar interface may be formed with a portion ofsubstrate 37 filling any previously open space ofcavities 35. As shown inFIG. 4C , the portion ofsubstrate 37 filling the previously open space ofcavities 35 may vary in some manner from the remaining portion ofsubstrate 36. Such variations may result depending on the attachment technique selected. Specifically, when an intermediate material is used to fill at least a portion ofcavities 35, the intermediate material may vary in some manner as compared to the preformed substrate being attached (or from precursor substrate materials). Such distinctions may lie in the binder content, powder type (e.g., tungsten or tungsten carbide alone or in combination with diamond powder) in amount, particle size, carbide type, etc. By using an intermediate material that varies from the remaining substrate, a gradient may be formed at the interface, as described above. Alternatively, theportion 37 of substrate may be identical to the remaining portion ofsubstrate 36. - Referring to
FIGS. 5A-5D , collectively, another embodiment of the process steps of the present disclosure is shown. As shown in FIG. SA, apolycrystalline diamond body 30 having a catalyzing material found in the interstitial regions between the diamond grains (as described above) may be formed attached to acarbide substrate 34. Thepolycrystalline diamond body 30 may be detached (shown inFIG. 5B ) from thesubstrate 34 prior to formation ofcavities 35 by techniques disclosed herein (shown in 5C). Further, as shown inFIG. 5D , thepolycrystalline diamond body 30 may then be attached (or reattached) to asubstrate 36 through sintering, and form a non-planar interface. In the embodiment shown inFIG. 5D , theportion 37 of substrate filling any previously open space ofpathways 35 may be identical to the remaining portion ofsubstrate 36. - Referring to
FIGS. 6A-6E , collectively, yet another embodiment of the process steps of the present disclosure is shown. As shown inFIG. 6A , apolycrystalline diamond body 30 having a catalyzing material found in the interstitial regions between the diamond grains (as described above) may be formed attached to acarbide substrate 34. Thepolycrystalline diamond body 30 may be detached (shown inFIG. 6B ) from thesubstrate 34 prior to formation of cavities 35 (shown inFIG. 6C ) by techniques disclosed herein. Leaching ofpolycrystalline diamond body 30 removes at least a substantial portion of the catalyzing material from the interstitial regions, leaving a polycrystalline diamond body 32 (shown inFIG. 6D ) having voids (other than cavities 35) dispersed in the diamond matrix or regions that were previously occupied by catalyzing material. Alternatively, leaching may occur prior to formation ofcavities 35 inpolycrystalline diamond body 30. Further, as shown inFIG. 6E , thepolycrystalline diamond body 32 may then be attached (or reattached) to asubstrate 36 through sintering, and form a non-planar interface. In the embodiment shown inFIG. 5D , theportion 37 of substrate filling any previously open space ofpathways 35 may be identical to the remaining portion ofsubstrate 36. - Embodiments of the present disclosure may provide for at least one of the following advantages. Conventional non-planar interfaces may be formed through formation of a geometrical surface in the substrate, and then placing diamond powder adjacent the geometrical surface to form a diamond layer having a mating surface during HPHT conditions. In accordance with embodiments of the present disclosure, a non-planar interface may be achieved by forming such geometrical surface in the diamond or other abrasive layer, and then attaching a substrate to the preformed diamond layer. Such methods may be particularly useful when a non-planar interface for a thermally stable cutting element formed by treating a “free-standing” PCD wafer is desired to increase the impact strength and reduce incidence of delamination.
- While the invention has been described with respect to a limited number of embodiments, those skilled in the art, having benefit of this disclosure, will appreciate that other embodiments can be devised which do not depart from the scope of the invention as disclosed herein. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (35)
1. A method for forming a cutting element, comprising:
forming at least one cavity in at least one surface of a polycrystalline abrasive body;
placing the polycrystalline abrasive body adjacent a substrate such that an opening of at least one cavity is adjacent the substrate at an interface, wherein an interface surface of the substrate is non-mating with the polycrystalline abrasive body; and
subjecting the polycrystalline abrasive body and substrate to high pressure/high temperature conditions.
2. The method of claim 1 , wherein the polycrystalline abrasive body comprises at least one of polycrystalline diamond, polycrystalline diamond having at least a portion of catalyzing material removed therefrom, or polycrystalline cubic boron nitride.
3. The method of claim 2 , wherein the portion of catalyzing material is removed before the forming.
4. The method of claim 2 , wherein the portion of catalyzing material is removed after the forming.
5. The method of claim 1 , further comprising:
adding an intermediate material in at least a portion of the at least one cavity.
6. The method of claim 5 , wherein the intermediate material comprises at least one of tungsten, tungsten carbide, or diamond powder.
7. The method of claim 1 , wherein the opening of the at least one cavity is less than 3 mm in diameter.
8. The method of claim 7 , wherein the opening of the at least one cavity is less than 1 mm in diameter.
9. The method of claim 8 , wherein the opening of the at least one cavity is less than 50 microns in diameter.
10. The method of claim 1 , wherein prior to placement adjacent the polycrystalline abrasive body, an upper surface of the substrate is substantially planar.
11. The method of claim 1 , wherein prior to placement adjacent the polycrystalline abrasive body, an upper surface of the substrate is non-planar.
12. A method for forming a cutting element, comprising:
forming a polycrystalline diamond compact of a polycrystalline diamond body attached to a substrate comprising:
placing a mixture of diamond particles and a catalyst material adjacent a substrate; and
subjecting the mixture and substrate to high-pressure/high temperature conditions;
detaching the polycrystalline diamond body from the substrate;
forming at least one cavity in at least one surface of the detached polycrystalline diamond body;
placing the polycrystalline abrasive body adjacent a substrate material such that an opening of at least one cavity is adjacent the substrate material; and
subjecting the polycrystalline abrasive body and substrate material to high temperature/high pressure conditions.
13. The method of claim 12 , further comprising:
removing at least a portion of the catalyst material from the polycrystalline diamond body.
14. The method of claim 12 , further comprising:
filling at least a portion of the at least one cavity with an intermediate material.
15. The method of claim 14 , wherein the intermediate material comprises at least one of tungsten, tungsten carbide, or diamond powder.
16. The method of claim 12 , wherein the opening of the at least one cavity is less than 3 mm in diameter.
17. The method of claim 16 , wherein the opening of the at least one cavity is less than 1 mm in diameter.
18. A method for forming a cutting element, comprising:
forming at least one cavity in at least one surface of a polycrystalline abrasive body;
placing the polycrystalline abrasive body adjacent a substrate precursor material such that an opening of at least one cavity is adjacent the substrate precursor; and
subjecting the polycrystalline abrasive body and substrate precursor materials to high pressure/high temperature conditions.
19. The method of claim 18 , wherein the substrate precursor materials comprise a mixture of tungsten carbide powder and a Group VIII metal.
20. The method of claim 18 , further comprising:
contacting the polycrystalline abrasive body with a leaching agent.
21. The method of claim 18 , wherein the opening of the at least one cavity is less than 3 mm in diameter.
22. The method of claim 21 , wherein the opening of the at least one cavity is less than 1 mm in diameter.
23. A cutting element, comprising:
a polycrystalline abrasive body; and
a substrate attached to the polycrystalline abrasive body,
wherein the polycrystalline abrasive body comprises, at the interface between the polycrystalline abrasive body and the substrate, at least one cavity formed therein, the at least one cavity having an opening with at least one dimension of less than 1 mm; and
wherein the substrate comprises at least one projection mating the at least one cavity.
24. The cutting element of claim 23 , wherein the wherein the polycrystalline abrasive body comprises at least one of polycrystalline diamond, polycrystalline diamond having at least a portion of catalyzing material removed therefrom, and polycrystalline cubic boron nitride.
25. The cutting element of claim 23 , wherein the cavity comprises a channel extending through an entire thickness of the polycrystalline abrasive body.
26. The cutting element of claim 23 , wherein the cavity extends a partial thickness into the polycrystalline abrasive body.
27. The cutting element of claim 23 , wherein the opening has at least one dimension of less than 50 microns.
28. A cutting element, comprising:
a polycrystalline abrasive body; and
a substrate attached to the polycrystalline abrasive body,
wherein the polycrystalline abrasive body comprises, at the interface between the polycrystalline abrasive body and the substrate, at least one cavity formed therein; and
wherein the substrate comprises at least one projection mating the at least one cavity, the at least one projection comprising a material composition distinct from the remaining substrate.
29. The cutting element of claim 28 , wherein the wherein the polycrystalline abrasive body comprises at least one of polycrystalline diamond, polycrystalline diamond having at least a portion of catalyzing material removed therefrom, and polycrystalline cubic boron nitride.
30. The cutting element of claim 28 , wherein the cavity comprises a channel extending through an entire thickness of the polycrystalline abrasive body.
31. The cutting element of claim 28 , wherein the cavity extends a partial thickness into the polycrystalline abrasive body.
32. The cutting element of claim 28 , wherein the opening has at least one dimension of less than 50 microns.
33. The cutting element of claim 28 , wherein the at least one projection comprises a binder content lower than the remaining substrate.
34. The cutting element of claim 28 , wherein the at least one projection comprises hard particles distinct from the remaining substrate.
35. The cutting element of claim 28 , wherein the at least one projection comprises a tungsten carbide and diamond composite.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/505,297 US20100012389A1 (en) | 2008-07-17 | 2009-07-17 | Methods of forming polycrystalline diamond cutters |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8161908P | 2008-07-17 | 2008-07-17 | |
US12/505,297 US20100012389A1 (en) | 2008-07-17 | 2009-07-17 | Methods of forming polycrystalline diamond cutters |
Publications (1)
Publication Number | Publication Date |
---|---|
US20100012389A1 true US20100012389A1 (en) | 2010-01-21 |
Family
ID=41529297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/505,297 Abandoned US20100012389A1 (en) | 2008-07-17 | 2009-07-17 | Methods of forming polycrystalline diamond cutters |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100012389A1 (en) |
CN (1) | CN102099541B (en) |
GB (1) | GB2473995B (en) |
WO (1) | WO2010009416A2 (en) |
ZA (1) | ZA201100927B (en) |
Cited By (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100243337A1 (en) * | 2009-03-31 | 2010-09-30 | Baker Hughes Incorporated | Methods for bonding preformed cutting tables to cutting element substrates and cutting elements formed by such processes |
US20100300764A1 (en) * | 2009-06-02 | 2010-12-02 | Kaveshini Naidoo | Polycrystalline diamond |
US20110036643A1 (en) * | 2009-08-07 | 2011-02-17 | Belnap J Daniel | Thermally stable polycrystalline diamond constructions |
US20110036641A1 (en) * | 2009-08-11 | 2011-02-17 | Lyons Nicholas J | Methods of forming polycrystalline diamond cutting elements, cutting elements, and earth-boring tools carrying cutting elements |
US20110042149A1 (en) * | 2009-08-18 | 2011-02-24 | Baker Hughes Incorporated | Methods of forming polycrystalline diamond elements, polycrystalline diamond elements, and earth-boring tools carrying such polycrystalline diamond elements |
US20110042147A1 (en) * | 2009-08-07 | 2011-02-24 | Smith International, Inc. | Functionally graded polycrystalline diamond insert |
US7972395B1 (en) * | 2009-04-06 | 2011-07-05 | Us Synthetic Corporation | Superabrasive articles and methods for removing interstitial materials from superabrasive materials |
US20120018223A1 (en) * | 2010-07-23 | 2012-01-26 | National Oilwell DHT, L.P. | Polycrystalline diamond cutting element and method of using same |
CN103696699A (en) * | 2014-01-08 | 2014-04-02 | 弘元超硬材料(河南)有限公司 | Cobalt-free polycrystalline diamond compact (PDC) drill bit and preparation technology thereof |
US8753413B1 (en) | 2008-03-03 | 2014-06-17 | Us Synthetic Corporation | Polycrystalline diamond compacts and applications therefor |
US8758463B2 (en) | 2009-08-07 | 2014-06-24 | Smith International, Inc. | Method of forming a thermally stable diamond cutting element |
US8764864B1 (en) | 2006-10-10 | 2014-07-01 | Us Synthetic Corporation | Polycrystalline diamond compact including a polycrystalline diamond table having copper-containing material therein and applications therefor |
US8778040B1 (en) | 2006-10-10 | 2014-07-15 | Us Synthetic Corporation | Superabrasive elements, methods of manufacturing, and drill bits including same |
US8808859B1 (en) | 2009-01-30 | 2014-08-19 | Us Synthetic Corporation | Polycrystalline diamond compact including pre-sintered polycrystalline diamond table having a thermally-stable region and applications therefor |
US8821604B2 (en) | 2006-11-20 | 2014-09-02 | Us Synthetic Corporation | Polycrystalline diamond compact and method of making same |
US20140246252A1 (en) * | 2013-03-01 | 2014-09-04 | Baker Hughes Incorporated | Polycrystalline compact tables for cutting elements and methods of fabrication |
US20140352228A1 (en) * | 2011-12-29 | 2014-12-04 | Element Six Abrasives S.A. | Method of processing polycrystalline diamond material |
US8911521B1 (en) | 2008-03-03 | 2014-12-16 | Us Synthetic Corporation | Methods of fabricating a polycrystalline diamond body with a sintering aid/infiltrant at least saturated with non-diamond carbon and resultant products such as compacts |
US8936659B2 (en) | 2010-04-14 | 2015-01-20 | Baker Hughes Incorporated | Methods of forming diamond particles having organic compounds attached thereto and compositions thereof |
US8979956B2 (en) | 2006-11-20 | 2015-03-17 | Us Synthetic Corporation | Polycrystalline diamond compact |
US8985248B2 (en) | 2010-08-13 | 2015-03-24 | Baker Hughes Incorporated | Cutting elements including nanoparticles in at least one portion thereof, earth-boring tools including such cutting elements, and related methods |
US8999025B1 (en) | 2008-03-03 | 2015-04-07 | Us Synthetic Corporation | Methods of fabricating a polycrystalline diamond body with a sintering aid/infiltrant at least saturated with non-diamond carbon and resultant products such as compacts |
US9023125B2 (en) | 2006-11-20 | 2015-05-05 | Us Synthetic Corporation | Polycrystalline diamond compact |
US9027675B1 (en) | 2011-02-15 | 2015-05-12 | Us Synthetic Corporation | Polycrystalline diamond compact including a polycrystalline diamond table containing aluminum carbide therein and applications therefor |
US9140072B2 (en) | 2013-02-28 | 2015-09-22 | Baker Hughes Incorporated | Cutting elements including non-planar interfaces, earth-boring tools including such cutting elements, and methods of forming cutting elements |
US20150285007A1 (en) * | 2014-04-08 | 2015-10-08 | Baker Hughes Incorporated | Cutting elements including undulating boundaries between catalyst-containing and catalyst-free regions of polycrystalline superabrasive materials and related earth-boring tools and methods |
US9272392B2 (en) | 2011-10-18 | 2016-03-01 | Us Synthetic Corporation | Polycrystalline diamond compacts and related products |
US9297211B2 (en) | 2007-12-17 | 2016-03-29 | Smith International, Inc. | Polycrystalline diamond construction with controlled gradient metal content |
US9297213B2 (en) | 2009-03-06 | 2016-03-29 | Baker Hughes Incorporated | Polycrystalline diamond element |
US9297212B1 (en) | 2013-03-12 | 2016-03-29 | Us Synthetic Corporation | Polycrystalline diamond compact including a substrate having a convexly-curved interfacial surface bonded to a polycrystalline diamond table, and related methods and applications |
WO2016000820A3 (en) * | 2014-07-01 | 2016-06-16 | Element Six (Uk) Limited | Superhard constructions & methods of making same |
US9387571B2 (en) | 2007-02-06 | 2016-07-12 | Smith International, Inc. | Manufacture of thermally stable cutting elements |
US9482056B2 (en) | 2011-12-30 | 2016-11-01 | Smith International, Inc. | Solid PCD cutter |
US9487847B2 (en) | 2011-10-18 | 2016-11-08 | Us Synthetic Corporation | Polycrystalline diamond compacts, related products, and methods of manufacture |
US9534450B2 (en) | 2013-07-22 | 2017-01-03 | Baker Hughes Incorporated | Thermally stable polycrystalline compacts for reduced spalling, earth-boring tools including such compacts, and related methods |
US9540885B2 (en) | 2011-10-18 | 2017-01-10 | Us Synthetic Corporation | Polycrystalline diamond compacts, related products, and methods of manufacture |
US9714545B2 (en) | 2014-04-08 | 2017-07-25 | Baker Hughes Incorporated | Cutting elements having a non-uniform annulus leach depth, earth-boring tools including such cutting elements, and related methods |
US9845642B2 (en) | 2014-03-17 | 2017-12-19 | Baker Hughes Incorporated | Cutting elements having non-planar cutting faces with selectively leached regions, earth-boring tools including such cutting elements, and related methods |
US9863189B2 (en) | 2014-07-11 | 2018-01-09 | Baker Hughes Incorporated | Cutting elements comprising partially leached polycrystalline material, tools comprising such cutting elements, and methods of forming wellbores using such cutting elements |
US9962669B2 (en) | 2011-09-16 | 2018-05-08 | Baker Hughes Incorporated | Cutting elements and earth-boring tools including a polycrystalline diamond material |
US20180126516A1 (en) * | 2013-03-31 | 2018-05-10 | Element Six Abrasives S.A. | Superhard constructions & methods of making same |
US10005672B2 (en) | 2010-04-14 | 2018-06-26 | Baker Hughes, A Ge Company, Llc | Method of forming particles comprising carbon and articles therefrom |
US10046441B2 (en) | 2013-12-30 | 2018-08-14 | Smith International, Inc. | PCD wafer without substrate for high pressure / high temperature sintering |
US10060192B1 (en) * | 2014-08-14 | 2018-08-28 | Us Synthetic Corporation | Methods of making polycrystalline diamond compacts and polycrystalline diamond compacts made using the same |
US10066441B2 (en) | 2010-04-14 | 2018-09-04 | Baker Hughes Incorporated | Methods of fabricating polycrystalline diamond, and cutting elements and earth-boring tools comprising polycrystalline diamond |
US10087685B1 (en) * | 2015-07-02 | 2018-10-02 | Us Synthetic Corporation | Shear-resistant joint between a superabrasive body and a substrate |
US10132121B2 (en) | 2007-03-21 | 2018-11-20 | Smith International, Inc. | Polycrystalline diamond constructions having improved thermal stability |
US10280687B1 (en) | 2013-03-12 | 2019-05-07 | Us Synthetic Corporation | Polycrystalline diamond compacts including infiltrated polycrystalline diamond table and methods of making same |
US10301882B2 (en) | 2010-12-07 | 2019-05-28 | Us Synthetic Corporation | Polycrystalline diamond compacts |
US10358705B2 (en) | 2014-12-17 | 2019-07-23 | Smith International, Inc. | Polycrystalline diamond sintered/rebonded on carbide substrate containing low tungsten |
US10472899B2 (en) | 2011-12-05 | 2019-11-12 | Smith International, Inc. | Cutting tools with rotating elements |
US10871037B2 (en) | 2015-12-14 | 2020-12-22 | Smith International, Inc. | Mechanical locking of ovoid cutting element with carbide matrix |
US10883317B2 (en) | 2016-03-04 | 2021-01-05 | Baker Hughes Incorporated | Polycrystalline diamond compacts and earth-boring tools including such compacts |
US11014157B2 (en) | 2014-12-17 | 2021-05-25 | Schlumberger Technology Corporation | Solid PCD with transition layers to accelerate full leaching of catalyst |
US11292750B2 (en) | 2017-05-12 | 2022-04-05 | Baker Hughes Holdings Llc | Cutting elements and structures |
US11396688B2 (en) | 2017-05-12 | 2022-07-26 | Baker Hughes Holdings Llc | Cutting elements, and related structures and earth-boring tools |
US11536091B2 (en) | 2018-05-30 | 2022-12-27 | Baker Hughes Holding LLC | Cutting elements, and related earth-boring tools and methods |
US11969860B2 (en) | 2009-03-06 | 2024-04-30 | Element Six Limited | Polycrystalline diamond |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104246110A (en) * | 2011-12-29 | 2014-12-24 | 史密斯国际有限公司 | Split sleeves for rolling cutters |
CA2872871A1 (en) * | 2012-05-11 | 2013-11-14 | Ulterra Drilling Technologies, L.P. | Diamond cutting elements for drill bits seeded with hcp crystalline material |
CN108147407A (en) * | 2018-01-05 | 2018-06-12 | 李伟 | A kind of optimization diamond compact and its feedstock optimization method |
Citations (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2941241A (en) * | 1955-02-14 | 1960-06-21 | Gen Electric | High temperature high pressure apparatus |
US2941248A (en) * | 1958-01-06 | 1960-06-21 | Gen Electric | High temperature high pressure apparatus |
US2947611A (en) * | 1958-01-06 | 1960-08-02 | Gen Electric | Diamond synthesis |
US3609818A (en) * | 1970-01-02 | 1971-10-05 | Gen Electric | Reaction vessel for high pressure apparatus |
US3767371A (en) * | 1971-07-01 | 1973-10-23 | Gen Electric | Cubic boron nitride/sintered carbide abrasive bodies |
US4104344A (en) * | 1975-09-12 | 1978-08-01 | Brigham Young University | High thermal conductivity substrate |
US4224380A (en) * | 1978-03-28 | 1980-09-23 | General Electric Company | Temperature resistant abrasive compact and method for making same |
US4288248A (en) * | 1978-03-28 | 1981-09-08 | General Electric Company | Temperature resistant abrasive compact and method for making same |
US4289503A (en) * | 1979-06-11 | 1981-09-15 | General Electric Company | Polycrystalline cubic boron nitride abrasive and process for preparing same in the absence of catalyst |
US4525178A (en) * | 1984-04-16 | 1985-06-25 | Megadiamond Industries, Inc. | Composite polycrystalline diamond |
US4572722A (en) * | 1982-10-21 | 1986-02-25 | Dyer Henry B | Abrasive compacts |
US4629373A (en) * | 1983-06-22 | 1986-12-16 | Megadiamond Industries, Inc. | Polycrystalline diamond body with enhanced surface irregularities |
US4673414A (en) * | 1986-01-29 | 1987-06-16 | General Electric Company | Re-sintered boron-rich polycrystalline cubic boron nitride and method for making same |
US4694918A (en) * | 1985-04-29 | 1987-09-22 | Smith International, Inc. | Rock bit with diamond tip inserts |
US4784023A (en) * | 1985-12-05 | 1988-11-15 | Diamant Boart-Stratabit (Usa) Inc. | Cutting element having composite formed of cemented carbide substrate and diamond layer and method of making same |
US4944772A (en) * | 1988-11-30 | 1990-07-31 | General Electric Company | Fabrication of supported polycrystalline abrasive compacts |
US4954139A (en) * | 1989-03-31 | 1990-09-04 | The General Electric Company | Method for producing polycrystalline compact tool blanks with flat carbide support/diamond or CBN interfaces |
US4984642A (en) * | 1989-05-17 | 1991-01-15 | Societe Industrielle De Combustible Nucleaire | Composite tool comprising a polycrystalline diamond active part |
US4987800A (en) * | 1988-06-28 | 1991-01-29 | Reed Tool Company Limited | Cutter elements for rotary drill bits |
US5011515A (en) * | 1989-08-07 | 1991-04-30 | Frushour Robert H | Composite polycrystalline diamond compact with improved impact resistance |
US5127923A (en) * | 1985-01-10 | 1992-07-07 | U.S. Synthetic Corporation | Composite abrasive compact having high thermal stability |
US5351772A (en) * | 1993-02-10 | 1994-10-04 | Baker Hughes, Incorporated | Polycrystalline diamond cutting element |
US5355969A (en) * | 1993-03-22 | 1994-10-18 | U.S. Synthetic Corporation | Composite polycrystalline cutting element with improved fracture and delamination resistance |
US5370195A (en) * | 1993-09-20 | 1994-12-06 | Smith International, Inc. | Drill bit inserts enhanced with polycrystalline diamond |
US5469927A (en) * | 1992-12-10 | 1995-11-28 | Camco International Inc. | Cutting elements for rotary drill bits |
US5494477A (en) * | 1993-08-11 | 1996-02-27 | General Electric Company | Abrasive tool insert |
US5564511A (en) * | 1995-05-15 | 1996-10-15 | Frushour; Robert H. | Composite polycrystalline compact with improved fracture and delamination resistance |
US5605198A (en) * | 1993-12-09 | 1997-02-25 | Baker Hughes Incorporated | Stress related placement of engineered superabrasive cutting elements on rotary drag bits |
US5875862A (en) * | 1995-07-14 | 1999-03-02 | U.S. Synthetic Corporation | Polycrystalline diamond cutter with integral carbide/diamond transition layer |
US6009963A (en) * | 1997-01-14 | 2000-01-04 | Baker Hughes Incorporated | Superabrasive cutting element with enhanced stiffness, thermal conductivity and cutting efficiency |
US6041875A (en) * | 1996-12-06 | 2000-03-28 | Smith International, Inc. | Non-planar interfaces for cutting elements |
US6106585A (en) * | 1996-02-14 | 2000-08-22 | Smith International, Inc. | Process for making diamond and cubic boron nitride cutting elements |
US6131678A (en) * | 1998-02-14 | 2000-10-17 | Camco International (Uk) Limited | Preform elements and mountings therefor |
US6196341B1 (en) * | 1998-05-20 | 2001-03-06 | Baker Hughes Incorporated | Reduced residual tensile stress superabrasive cutters for earth boring and drill bits so equipped |
US6209185B1 (en) * | 1993-04-16 | 2001-04-03 | Baker Hughes Incorporated | Earth-boring bit with improved rigid face seal |
US6298930B1 (en) * | 1999-08-26 | 2001-10-09 | Baker Hughes Incorporated | Drill bits with controlled cutter loading and depth of cut |
US6314836B1 (en) * | 1997-10-14 | 2001-11-13 | General Electric Company | Wire drawing die with non-cylindrical interface configuration for reducing stresses |
US20020034631A1 (en) * | 2000-09-20 | 2002-03-21 | Griffin Nigel Dennis | High volume density polycrystalline diamond with working surfaces depleted of catalyzing material |
US6410085B1 (en) * | 2000-09-20 | 2002-06-25 | Camco International (Uk) Limited | Method of machining of polycrystalline diamond |
US6447560B2 (en) * | 1999-02-19 | 2002-09-10 | Us Synthetic Corporation | Method for forming a superabrasive polycrystalline cutting tool with an integral chipbreaker feature |
US6605798B1 (en) * | 1998-12-22 | 2003-08-12 | Barry James Cullen | Cutting of ultra-hard materials |
US6641861B2 (en) * | 1998-01-16 | 2003-11-04 | Sumitomo Electric Industries, Ltd. | Heatsink and fabrication method thereof |
US6892836B1 (en) * | 1998-03-25 | 2005-05-17 | Smith International, Inc. | Cutting element having a substrate, a transition layer and an ultra hard material layer |
US20050263328A1 (en) * | 2004-05-06 | 2005-12-01 | Smith International, Inc. | Thermally stable diamond bonded materials and compacts |
US20060110575A1 (en) * | 2002-04-24 | 2006-05-25 | Diaccon Gmbh | Slide element and method for production of said slide element |
US20060157285A1 (en) * | 2005-01-17 | 2006-07-20 | Us Synthetic Corporation | Polycrystalline diamond insert, drill bit including same, and method of operation |
US20060191723A1 (en) * | 2005-02-23 | 2006-08-31 | Keshavan Madapusi K | Thermally stable polycrystalline diamond materials, cutting elements incorporating the same and bits incorporating such cutting elements |
US7108598B1 (en) * | 2001-07-09 | 2006-09-19 | U.S. Synthetic Corporation | PDC interface incorporating a closed network of features |
US20060207802A1 (en) * | 2005-02-08 | 2006-09-21 | Youhe Zhang | Thermally stable polycrystalline diamond cutting elements and bits incorporating the same |
US20060266559A1 (en) * | 2005-05-26 | 2006-11-30 | Smith International, Inc. | Polycrystalline diamond materials having improved abrasion resistance, thermal stability and impact resistance |
US20070181348A1 (en) * | 2003-05-27 | 2007-08-09 | Brett Lancaster | Polycrystalline diamond abrasive elements |
US7316279B2 (en) * | 2004-10-28 | 2008-01-08 | Diamond Innovations, Inc. | Polycrystalline cutter with multiple cutting edges |
US20080085407A1 (en) * | 2006-10-10 | 2008-04-10 | Us Synthetic Corporation | Superabrasive elements, methods of manufacturing, and drill bits including same |
US7377341B2 (en) * | 2005-05-26 | 2008-05-27 | Smith International, Inc. | Thermally stable ultra-hard material compact construction |
US20080142276A1 (en) * | 2006-05-09 | 2008-06-19 | Smith International, Inc. | Thermally stable ultra-hard material compact constructions |
US20080185189A1 (en) * | 2007-02-06 | 2008-08-07 | Smith International, Inc. | Manufacture of thermally stable cutting elements |
US7464973B1 (en) * | 2003-02-04 | 2008-12-16 | U.S. Synthetic Corporation | Apparatus for traction control having diamond and carbide enhanced traction surfaces and method of making the same |
US20090090563A1 (en) * | 2007-10-04 | 2009-04-09 | Smith International, Inc. | Diamond-bonded constrcutions with improved thermal and mechanical properties |
US20090152017A1 (en) * | 2007-12-17 | 2009-06-18 | Smith International, Inc. | Polycrystalline diamond construction with controlled gradient metal content |
US20110023375A1 (en) * | 2008-10-30 | 2011-02-03 | Us Synthetic Corporation | Polycrystalline diamond compacts, and related methods and applications |
US8236074B1 (en) * | 2006-10-10 | 2012-08-07 | Us Synthetic Corporation | Superabrasive elements, methods of manufacturing, and drill bits including same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1750876B1 (en) * | 2004-05-12 | 2011-07-06 | Baker Hughes Incorporated | Cutting tool insert |
-
2009
- 2009-07-17 US US12/505,297 patent/US20100012389A1/en not_active Abandoned
- 2009-07-17 WO PCT/US2009/051022 patent/WO2010009416A2/en active Application Filing
- 2009-07-17 CN CN200980127904.8A patent/CN102099541B/en not_active Expired - Fee Related
- 2009-07-17 GB GB1101214.3A patent/GB2473995B/en not_active Expired - Fee Related
-
2011
- 2011-02-04 ZA ZA2011/00927A patent/ZA201100927B/en unknown
Patent Citations (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2941241A (en) * | 1955-02-14 | 1960-06-21 | Gen Electric | High temperature high pressure apparatus |
US2941248A (en) * | 1958-01-06 | 1960-06-21 | Gen Electric | High temperature high pressure apparatus |
US2947611A (en) * | 1958-01-06 | 1960-08-02 | Gen Electric | Diamond synthesis |
US3609818A (en) * | 1970-01-02 | 1971-10-05 | Gen Electric | Reaction vessel for high pressure apparatus |
US3767371A (en) * | 1971-07-01 | 1973-10-23 | Gen Electric | Cubic boron nitride/sintered carbide abrasive bodies |
US4104344A (en) * | 1975-09-12 | 1978-08-01 | Brigham Young University | High thermal conductivity substrate |
US4224380A (en) * | 1978-03-28 | 1980-09-23 | General Electric Company | Temperature resistant abrasive compact and method for making same |
US4288248A (en) * | 1978-03-28 | 1981-09-08 | General Electric Company | Temperature resistant abrasive compact and method for making same |
US4289503A (en) * | 1979-06-11 | 1981-09-15 | General Electric Company | Polycrystalline cubic boron nitride abrasive and process for preparing same in the absence of catalyst |
US4572722A (en) * | 1982-10-21 | 1986-02-25 | Dyer Henry B | Abrasive compacts |
US4629373A (en) * | 1983-06-22 | 1986-12-16 | Megadiamond Industries, Inc. | Polycrystalline diamond body with enhanced surface irregularities |
US4525178A (en) * | 1984-04-16 | 1985-06-25 | Megadiamond Industries, Inc. | Composite polycrystalline diamond |
US4525178B1 (en) * | 1984-04-16 | 1990-03-27 | Megadiamond Ind Inc | |
US5127923A (en) * | 1985-01-10 | 1992-07-07 | U.S. Synthetic Corporation | Composite abrasive compact having high thermal stability |
US4694918A (en) * | 1985-04-29 | 1987-09-22 | Smith International, Inc. | Rock bit with diamond tip inserts |
US4784023A (en) * | 1985-12-05 | 1988-11-15 | Diamant Boart-Stratabit (Usa) Inc. | Cutting element having composite formed of cemented carbide substrate and diamond layer and method of making same |
US4673414A (en) * | 1986-01-29 | 1987-06-16 | General Electric Company | Re-sintered boron-rich polycrystalline cubic boron nitride and method for making same |
US4987800A (en) * | 1988-06-28 | 1991-01-29 | Reed Tool Company Limited | Cutter elements for rotary drill bits |
US4944772A (en) * | 1988-11-30 | 1990-07-31 | General Electric Company | Fabrication of supported polycrystalline abrasive compacts |
US4954139A (en) * | 1989-03-31 | 1990-09-04 | The General Electric Company | Method for producing polycrystalline compact tool blanks with flat carbide support/diamond or CBN interfaces |
US4984642A (en) * | 1989-05-17 | 1991-01-15 | Societe Industrielle De Combustible Nucleaire | Composite tool comprising a polycrystalline diamond active part |
US5011515A (en) * | 1989-08-07 | 1991-04-30 | Frushour Robert H | Composite polycrystalline diamond compact with improved impact resistance |
US5011515B1 (en) * | 1989-08-07 | 1999-07-06 | Robert H Frushour | Composite polycrystalline diamond compact with improved impact resistance |
US5469927A (en) * | 1992-12-10 | 1995-11-28 | Camco International Inc. | Cutting elements for rotary drill bits |
US5351772A (en) * | 1993-02-10 | 1994-10-04 | Baker Hughes, Incorporated | Polycrystalline diamond cutting element |
US5355969A (en) * | 1993-03-22 | 1994-10-18 | U.S. Synthetic Corporation | Composite polycrystalline cutting element with improved fracture and delamination resistance |
US6209185B1 (en) * | 1993-04-16 | 2001-04-03 | Baker Hughes Incorporated | Earth-boring bit with improved rigid face seal |
US5494477A (en) * | 1993-08-11 | 1996-02-27 | General Electric Company | Abrasive tool insert |
US5370195A (en) * | 1993-09-20 | 1994-12-06 | Smith International, Inc. | Drill bit inserts enhanced with polycrystalline diamond |
US5605198A (en) * | 1993-12-09 | 1997-02-25 | Baker Hughes Incorporated | Stress related placement of engineered superabrasive cutting elements on rotary drag bits |
US5564511A (en) * | 1995-05-15 | 1996-10-15 | Frushour; Robert H. | Composite polycrystalline compact with improved fracture and delamination resistance |
US5875862A (en) * | 1995-07-14 | 1999-03-02 | U.S. Synthetic Corporation | Polycrystalline diamond cutter with integral carbide/diamond transition layer |
US6106585A (en) * | 1996-02-14 | 2000-08-22 | Smith International, Inc. | Process for making diamond and cubic boron nitride cutting elements |
US6041875A (en) * | 1996-12-06 | 2000-03-28 | Smith International, Inc. | Non-planar interfaces for cutting elements |
US6009963A (en) * | 1997-01-14 | 2000-01-04 | Baker Hughes Incorporated | Superabrasive cutting element with enhanced stiffness, thermal conductivity and cutting efficiency |
US6314836B1 (en) * | 1997-10-14 | 2001-11-13 | General Electric Company | Wire drawing die with non-cylindrical interface configuration for reducing stresses |
US6641861B2 (en) * | 1998-01-16 | 2003-11-04 | Sumitomo Electric Industries, Ltd. | Heatsink and fabrication method thereof |
US6131678A (en) * | 1998-02-14 | 2000-10-17 | Camco International (Uk) Limited | Preform elements and mountings therefor |
US6892836B1 (en) * | 1998-03-25 | 2005-05-17 | Smith International, Inc. | Cutting element having a substrate, a transition layer and an ultra hard material layer |
US6196341B1 (en) * | 1998-05-20 | 2001-03-06 | Baker Hughes Incorporated | Reduced residual tensile stress superabrasive cutters for earth boring and drill bits so equipped |
US6605798B1 (en) * | 1998-12-22 | 2003-08-12 | Barry James Cullen | Cutting of ultra-hard materials |
US6447560B2 (en) * | 1999-02-19 | 2002-09-10 | Us Synthetic Corporation | Method for forming a superabrasive polycrystalline cutting tool with an integral chipbreaker feature |
US6298930B1 (en) * | 1999-08-26 | 2001-10-09 | Baker Hughes Incorporated | Drill bits with controlled cutter loading and depth of cut |
US20020034631A1 (en) * | 2000-09-20 | 2002-03-21 | Griffin Nigel Dennis | High volume density polycrystalline diamond with working surfaces depleted of catalyzing material |
US20020034632A1 (en) * | 2000-09-20 | 2002-03-21 | Griffin Nigel Dennis | Polycrystalline diamond partially depleted of catalyzing material |
US6410085B1 (en) * | 2000-09-20 | 2002-06-25 | Camco International (Uk) Limited | Method of machining of polycrystalline diamond |
US7108598B1 (en) * | 2001-07-09 | 2006-09-19 | U.S. Synthetic Corporation | PDC interface incorporating a closed network of features |
US20060110575A1 (en) * | 2002-04-24 | 2006-05-25 | Diaccon Gmbh | Slide element and method for production of said slide element |
US7464973B1 (en) * | 2003-02-04 | 2008-12-16 | U.S. Synthetic Corporation | Apparatus for traction control having diamond and carbide enhanced traction surfaces and method of making the same |
US20070181348A1 (en) * | 2003-05-27 | 2007-08-09 | Brett Lancaster | Polycrystalline diamond abrasive elements |
US20050263328A1 (en) * | 2004-05-06 | 2005-12-01 | Smith International, Inc. | Thermally stable diamond bonded materials and compacts |
US7316279B2 (en) * | 2004-10-28 | 2008-01-08 | Diamond Innovations, Inc. | Polycrystalline cutter with multiple cutting edges |
US20060157285A1 (en) * | 2005-01-17 | 2006-07-20 | Us Synthetic Corporation | Polycrystalline diamond insert, drill bit including same, and method of operation |
US20060207802A1 (en) * | 2005-02-08 | 2006-09-21 | Youhe Zhang | Thermally stable polycrystalline diamond cutting elements and bits incorporating the same |
US20060191723A1 (en) * | 2005-02-23 | 2006-08-31 | Keshavan Madapusi K | Thermally stable polycrystalline diamond materials, cutting elements incorporating the same and bits incorporating such cutting elements |
US20080223621A1 (en) * | 2005-05-26 | 2008-09-18 | Smith International, Inc. | Thermally stable ultra-hard material compact construction |
US20060266559A1 (en) * | 2005-05-26 | 2006-11-30 | Smith International, Inc. | Polycrystalline diamond materials having improved abrasion resistance, thermal stability and impact resistance |
US7377341B2 (en) * | 2005-05-26 | 2008-05-27 | Smith International, Inc. | Thermally stable ultra-hard material compact construction |
US20080142276A1 (en) * | 2006-05-09 | 2008-06-19 | Smith International, Inc. | Thermally stable ultra-hard material compact constructions |
US20080085407A1 (en) * | 2006-10-10 | 2008-04-10 | Us Synthetic Corporation | Superabrasive elements, methods of manufacturing, and drill bits including same |
US8236074B1 (en) * | 2006-10-10 | 2012-08-07 | Us Synthetic Corporation | Superabrasive elements, methods of manufacturing, and drill bits including same |
US20080223623A1 (en) * | 2007-02-06 | 2008-09-18 | Smith International, Inc. | Polycrystalline diamond constructions having improved thermal stability |
US20080185189A1 (en) * | 2007-02-06 | 2008-08-07 | Smith International, Inc. | Manufacture of thermally stable cutting elements |
US20090090563A1 (en) * | 2007-10-04 | 2009-04-09 | Smith International, Inc. | Diamond-bonded constrcutions with improved thermal and mechanical properties |
US20090152017A1 (en) * | 2007-12-17 | 2009-06-18 | Smith International, Inc. | Polycrystalline diamond construction with controlled gradient metal content |
US20110023375A1 (en) * | 2008-10-30 | 2011-02-03 | Us Synthetic Corporation | Polycrystalline diamond compacts, and related methods and applications |
Cited By (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8814966B1 (en) | 2006-10-10 | 2014-08-26 | Us Synthetic Corporation | Polycrystalline diamond compact formed by iniltrating a polycrystalline diamond body with an infiltrant having one or more carbide formers |
US8778040B1 (en) | 2006-10-10 | 2014-07-15 | Us Synthetic Corporation | Superabrasive elements, methods of manufacturing, and drill bits including same |
US8790430B1 (en) | 2006-10-10 | 2014-07-29 | Us Synthetic Corporation | Polycrystalline diamond compact including a polycrystalline diamond table with a thermally-stable region having a copper-containing material and applications therefor |
US8764864B1 (en) | 2006-10-10 | 2014-07-01 | Us Synthetic Corporation | Polycrystalline diamond compact including a polycrystalline diamond table having copper-containing material therein and applications therefor |
US9951566B1 (en) | 2006-10-10 | 2018-04-24 | Us Synthetic Corporation | Superabrasive elements, methods of manufacturing, and drill bits including same |
US9623542B1 (en) | 2006-10-10 | 2017-04-18 | Us Synthetic Corporation | Methods of making a polycrystalline diamond compact including a polycrystalline diamond table with a thermally-stable region having at least one low-carbon-solubility material |
US9017438B1 (en) | 2006-10-10 | 2015-04-28 | Us Synthetic Corporation | Polycrystalline diamond compact including a polycrystalline diamond table with a thermally-stable region having at least one low-carbon-solubility material and applications therefor |
US9808910B2 (en) | 2006-11-20 | 2017-11-07 | Us Synthetic Corporation | Polycrystalline diamond compacts |
US8821604B2 (en) | 2006-11-20 | 2014-09-02 | Us Synthetic Corporation | Polycrystalline diamond compact and method of making same |
US8979956B2 (en) | 2006-11-20 | 2015-03-17 | Us Synthetic Corporation | Polycrystalline diamond compact |
US9023125B2 (en) | 2006-11-20 | 2015-05-05 | Us Synthetic Corporation | Polycrystalline diamond compact |
US9663994B2 (en) | 2006-11-20 | 2017-05-30 | Us Synthetic Corporation | Polycrystalline diamond compact |
US10124468B2 (en) | 2007-02-06 | 2018-11-13 | Smith International, Inc. | Polycrystalline diamond constructions having improved thermal stability |
US9387571B2 (en) | 2007-02-06 | 2016-07-12 | Smith International, Inc. | Manufacture of thermally stable cutting elements |
US10132121B2 (en) | 2007-03-21 | 2018-11-20 | Smith International, Inc. | Polycrystalline diamond constructions having improved thermal stability |
US9297211B2 (en) | 2007-12-17 | 2016-03-29 | Smith International, Inc. | Polycrystalline diamond construction with controlled gradient metal content |
US10076824B2 (en) | 2007-12-17 | 2018-09-18 | Smith International, Inc. | Polycrystalline diamond construction with controlled gradient metal content |
US8753413B1 (en) | 2008-03-03 | 2014-06-17 | Us Synthetic Corporation | Polycrystalline diamond compacts and applications therefor |
US9381620B1 (en) | 2008-03-03 | 2016-07-05 | Us Synthetic Corporation | Methods of fabricating polycrystalline diamond compacts |
US9643293B1 (en) | 2008-03-03 | 2017-05-09 | Us Synthetic Corporation | Methods of fabricating a polycrystalline diamond body with a sintering aid/infiltrant at least saturated with non-diamond carbon and resultant products such as compacts |
US8999025B1 (en) | 2008-03-03 | 2015-04-07 | Us Synthetic Corporation | Methods of fabricating a polycrystalline diamond body with a sintering aid/infiltrant at least saturated with non-diamond carbon and resultant products such as compacts |
US8911521B1 (en) | 2008-03-03 | 2014-12-16 | Us Synthetic Corporation | Methods of fabricating a polycrystalline diamond body with a sintering aid/infiltrant at least saturated with non-diamond carbon and resultant products such as compacts |
US8808859B1 (en) | 2009-01-30 | 2014-08-19 | Us Synthetic Corporation | Polycrystalline diamond compact including pre-sintered polycrystalline diamond table having a thermally-stable region and applications therefor |
US9376868B1 (en) | 2009-01-30 | 2016-06-28 | Us Synthetic Corporation | Polycrystalline diamond compact including pre-sintered polycrystalline diamond table having a thermally-stable region and applications therefor |
US11969860B2 (en) | 2009-03-06 | 2024-04-30 | Element Six Limited | Polycrystalline diamond |
US9297213B2 (en) | 2009-03-06 | 2016-03-29 | Baker Hughes Incorporated | Polycrystalline diamond element |
US8851208B2 (en) | 2009-03-31 | 2014-10-07 | Baker Hughes Incorporated | Cutting elements including adhesion materials, earth-boring tools including such cutting elements, and related methods |
US9839989B2 (en) | 2009-03-31 | 2017-12-12 | Baker Hughes Incorporated | Methods of fabricating cutting elements including adhesion materials for earth-boring tools |
US20100243337A1 (en) * | 2009-03-31 | 2010-09-30 | Baker Hughes Incorporated | Methods for bonding preformed cutting tables to cutting element substrates and cutting elements formed by such processes |
US8573333B2 (en) * | 2009-03-31 | 2013-11-05 | Baker Hughes Incorporated | Methods for bonding preformed cutting tables to cutting element substrates and cutting elements formed by such processes |
US7972395B1 (en) * | 2009-04-06 | 2011-07-05 | Us Synthetic Corporation | Superabrasive articles and methods for removing interstitial materials from superabrasive materials |
US20100300764A1 (en) * | 2009-06-02 | 2010-12-02 | Kaveshini Naidoo | Polycrystalline diamond |
US8490721B2 (en) | 2009-06-02 | 2013-07-23 | Element Six Abrasives S.A. | Polycrystalline diamond |
US20110036643A1 (en) * | 2009-08-07 | 2011-02-17 | Belnap J Daniel | Thermally stable polycrystalline diamond constructions |
US8758463B2 (en) | 2009-08-07 | 2014-06-24 | Smith International, Inc. | Method of forming a thermally stable diamond cutting element |
US20110042147A1 (en) * | 2009-08-07 | 2011-02-24 | Smith International, Inc. | Functionally graded polycrystalline diamond insert |
US8695733B2 (en) | 2009-08-07 | 2014-04-15 | Smith International, Inc. | Functionally graded polycrystalline diamond insert |
US20110036641A1 (en) * | 2009-08-11 | 2011-02-17 | Lyons Nicholas J | Methods of forming polycrystalline diamond cutting elements, cutting elements, and earth-boring tools carrying cutting elements |
US8267204B2 (en) * | 2009-08-11 | 2012-09-18 | Baker Hughes Incorporated | Methods of forming polycrystalline diamond cutting elements, cutting elements, and earth-boring tools carrying cutting elements |
US20110042149A1 (en) * | 2009-08-18 | 2011-02-24 | Baker Hughes Incorporated | Methods of forming polycrystalline diamond elements, polycrystalline diamond elements, and earth-boring tools carrying such polycrystalline diamond elements |
US9701877B2 (en) | 2010-04-14 | 2017-07-11 | Baker Hughes Incorporated | Compositions of diamond particles having organic compounds attached thereto |
US8936659B2 (en) | 2010-04-14 | 2015-01-20 | Baker Hughes Incorporated | Methods of forming diamond particles having organic compounds attached thereto and compositions thereof |
US10005672B2 (en) | 2010-04-14 | 2018-06-26 | Baker Hughes, A Ge Company, Llc | Method of forming particles comprising carbon and articles therefrom |
US10066441B2 (en) | 2010-04-14 | 2018-09-04 | Baker Hughes Incorporated | Methods of fabricating polycrystalline diamond, and cutting elements and earth-boring tools comprising polycrystalline diamond |
US8875812B2 (en) * | 2010-07-23 | 2014-11-04 | National Oilwell DHT, L.P. | Polycrystalline diamond cutting element and method of using same |
US20120018223A1 (en) * | 2010-07-23 | 2012-01-26 | National Oilwell DHT, L.P. | Polycrystalline diamond cutting element and method of using same |
US8985248B2 (en) | 2010-08-13 | 2015-03-24 | Baker Hughes Incorporated | Cutting elements including nanoparticles in at least one portion thereof, earth-boring tools including such cutting elements, and related methods |
US9797201B2 (en) | 2010-08-13 | 2017-10-24 | Baker Hughes Incorporated | Cutting elements including nanoparticles in at least one region thereof, earth-boring tools including such cutting elements, and related methods |
US10309158B2 (en) | 2010-12-07 | 2019-06-04 | Us Synthetic Corporation | Method of partially infiltrating an at least partially leached polycrystalline diamond table and resultant polycrystalline diamond compacts |
US10301882B2 (en) | 2010-12-07 | 2019-05-28 | Us Synthetic Corporation | Polycrystalline diamond compacts |
US9027675B1 (en) | 2011-02-15 | 2015-05-12 | Us Synthetic Corporation | Polycrystalline diamond compact including a polycrystalline diamond table containing aluminum carbide therein and applications therefor |
US10155301B1 (en) | 2011-02-15 | 2018-12-18 | Us Synthetic Corporation | Methods of manufacturing a polycrystalline diamond compact including a polycrystalline diamond table containing aluminum carbide therein |
US9962669B2 (en) | 2011-09-16 | 2018-05-08 | Baker Hughes Incorporated | Cutting elements and earth-boring tools including a polycrystalline diamond material |
US9540885B2 (en) | 2011-10-18 | 2017-01-10 | Us Synthetic Corporation | Polycrystalline diamond compacts, related products, and methods of manufacture |
US9272392B2 (en) | 2011-10-18 | 2016-03-01 | Us Synthetic Corporation | Polycrystalline diamond compacts and related products |
US10179390B2 (en) | 2011-10-18 | 2019-01-15 | Us Synthetic Corporation | Methods of fabricating a polycrystalline diamond compact |
US9487847B2 (en) | 2011-10-18 | 2016-11-08 | Us Synthetic Corporation | Polycrystalline diamond compacts, related products, and methods of manufacture |
US10472899B2 (en) | 2011-12-05 | 2019-11-12 | Smith International, Inc. | Cutting tools with rotating elements |
US20140352228A1 (en) * | 2011-12-29 | 2014-12-04 | Element Six Abrasives S.A. | Method of processing polycrystalline diamond material |
US9482056B2 (en) | 2011-12-30 | 2016-11-01 | Smith International, Inc. | Solid PCD cutter |
US9140072B2 (en) | 2013-02-28 | 2015-09-22 | Baker Hughes Incorporated | Cutting elements including non-planar interfaces, earth-boring tools including such cutting elements, and methods of forming cutting elements |
CN105026678A (en) * | 2013-03-01 | 2015-11-04 | 贝克休斯公司 | Polycrystalline compact tables for cutting elements and methods of fabrication |
US10094173B2 (en) | 2013-03-01 | 2018-10-09 | Baker Hughes Incorporated | Polycrystalline compacts for cutting elements, related earth-boring tools, and related methods |
US9428967B2 (en) * | 2013-03-01 | 2016-08-30 | Baker Hughes Incorporated | Polycrystalline compact tables for cutting elements and methods of fabrication |
US20140246252A1 (en) * | 2013-03-01 | 2014-09-04 | Baker Hughes Incorporated | Polycrystalline compact tables for cutting elements and methods of fabrication |
US10280687B1 (en) | 2013-03-12 | 2019-05-07 | Us Synthetic Corporation | Polycrystalline diamond compacts including infiltrated polycrystalline diamond table and methods of making same |
US9938776B1 (en) | 2013-03-12 | 2018-04-10 | Us Synthetic Corporation | Polycrystalline diamond compact including a substrate having a convexly-curved interfacial surface bonded to a polycrystalline diamond table, and related applications |
US9297212B1 (en) | 2013-03-12 | 2016-03-29 | Us Synthetic Corporation | Polycrystalline diamond compact including a substrate having a convexly-curved interfacial surface bonded to a polycrystalline diamond table, and related methods and applications |
US20180126516A1 (en) * | 2013-03-31 | 2018-05-10 | Element Six Abrasives S.A. | Superhard constructions & methods of making same |
US10259101B2 (en) | 2013-07-22 | 2019-04-16 | Baker Hughes Incorporated | Methods of forming thermally stable polycrystalline compacts for reduced spalling |
US9534450B2 (en) | 2013-07-22 | 2017-01-03 | Baker Hughes Incorporated | Thermally stable polycrystalline compacts for reduced spalling, earth-boring tools including such compacts, and related methods |
US10046441B2 (en) | 2013-12-30 | 2018-08-14 | Smith International, Inc. | PCD wafer without substrate for high pressure / high temperature sintering |
CN103696699A (en) * | 2014-01-08 | 2014-04-02 | 弘元超硬材料(河南)有限公司 | Cobalt-free polycrystalline diamond compact (PDC) drill bit and preparation technology thereof |
US9845642B2 (en) | 2014-03-17 | 2017-12-19 | Baker Hughes Incorporated | Cutting elements having non-planar cutting faces with selectively leached regions, earth-boring tools including such cutting elements, and related methods |
US10378289B2 (en) | 2014-03-17 | 2019-08-13 | Baker Hughes, A Ge Company, Llc | Cutting elements having non-planar cutting faces with selectively leached regions and earth-boring tools including such cutting elements |
US10612312B2 (en) | 2014-04-08 | 2020-04-07 | Baker Hughes, A Ge Company, Llc | Cutting elements including undulating boundaries between catalyst-containing and catalyst-free regions of polycrystalline superabrasive materials and related earth-boring tools and methods |
US9605488B2 (en) * | 2014-04-08 | 2017-03-28 | Baker Hughes Incorporated | Cutting elements including undulating boundaries between catalyst-containing and catalyst-free regions of polycrystalline superabrasive materials and related earth-boring tools and methods |
US20150285007A1 (en) * | 2014-04-08 | 2015-10-08 | Baker Hughes Incorporated | Cutting elements including undulating boundaries between catalyst-containing and catalyst-free regions of polycrystalline superabrasive materials and related earth-boring tools and methods |
US9714545B2 (en) | 2014-04-08 | 2017-07-25 | Baker Hughes Incorporated | Cutting elements having a non-uniform annulus leach depth, earth-boring tools including such cutting elements, and related methods |
US10024113B2 (en) | 2014-04-08 | 2018-07-17 | Baker Hughes Incorporated | Cutting elements having a non-uniform annulus leach depth, earth-boring tools including such cutting elements, and related methods |
US10329848B2 (en) | 2014-07-01 | 2019-06-25 | Element Six (Uk) Limited | Superhard constructions and methods of making same |
WO2016000820A3 (en) * | 2014-07-01 | 2016-06-16 | Element Six (Uk) Limited | Superhard constructions & methods of making same |
US9863189B2 (en) | 2014-07-11 | 2018-01-09 | Baker Hughes Incorporated | Cutting elements comprising partially leached polycrystalline material, tools comprising such cutting elements, and methods of forming wellbores using such cutting elements |
US10060192B1 (en) * | 2014-08-14 | 2018-08-28 | Us Synthetic Corporation | Methods of making polycrystalline diamond compacts and polycrystalline diamond compacts made using the same |
US10358705B2 (en) | 2014-12-17 | 2019-07-23 | Smith International, Inc. | Polycrystalline diamond sintered/rebonded on carbide substrate containing low tungsten |
US11014157B2 (en) | 2014-12-17 | 2021-05-25 | Schlumberger Technology Corporation | Solid PCD with transition layers to accelerate full leaching of catalyst |
US10087685B1 (en) * | 2015-07-02 | 2018-10-02 | Us Synthetic Corporation | Shear-resistant joint between a superabrasive body and a substrate |
US11021913B2 (en) | 2015-12-14 | 2021-06-01 | Schlumberger Technology Corporation | Direct casting of ultrahard insert in bit body |
US11492852B2 (en) | 2015-12-14 | 2022-11-08 | Schlumberger Technology Corporation | Mechanical locking of cutting element with carbide matrix |
US10871037B2 (en) | 2015-12-14 | 2020-12-22 | Smith International, Inc. | Mechanical locking of ovoid cutting element with carbide matrix |
US10883317B2 (en) | 2016-03-04 | 2021-01-05 | Baker Hughes Incorporated | Polycrystalline diamond compacts and earth-boring tools including such compacts |
US11292750B2 (en) | 2017-05-12 | 2022-04-05 | Baker Hughes Holdings Llc | Cutting elements and structures |
US11396688B2 (en) | 2017-05-12 | 2022-07-26 | Baker Hughes Holdings Llc | Cutting elements, and related structures and earth-boring tools |
US11807920B2 (en) | 2017-05-12 | 2023-11-07 | Baker Hughes Holdings Llc | Methods of forming cutting elements and supporting substrates for cutting elements |
US11536091B2 (en) | 2018-05-30 | 2022-12-27 | Baker Hughes Holding LLC | Cutting elements, and related earth-boring tools and methods |
US11885182B2 (en) | 2018-05-30 | 2024-01-30 | Baker Hughes Holdings Llc | Methods of forming cutting elements |
Also Published As
Publication number | Publication date |
---|---|
GB201101214D0 (en) | 2011-03-09 |
GB2473995A (en) | 2011-03-30 |
WO2010009416A3 (en) | 2010-04-15 |
CN102099541B (en) | 2015-06-17 |
WO2010009416A2 (en) | 2010-01-21 |
ZA201100927B (en) | 2011-10-26 |
GB2473995B (en) | 2013-01-09 |
CN102099541A (en) | 2011-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20100012389A1 (en) | Methods of forming polycrystalline diamond cutters | |
US11498873B2 (en) | Superhard constructions and methods of making same | |
US8328891B2 (en) | Methods of forming thermally stable polycrystalline diamond cutters | |
US8702825B2 (en) | Composite cutter substrate to mitigate residual stress | |
US8066087B2 (en) | Thermally stable ultra-hard material compact constructions | |
US20220411900A1 (en) | Superhard constructions & methods of making | |
US10329848B2 (en) | Superhard constructions and methods of making same | |
CN105392584B (en) | Superhard constructions and methods of making same | |
US20110036643A1 (en) | Thermally stable polycrystalline diamond constructions | |
US10737327B2 (en) | Super hard constructions and methods of making same | |
US10107042B2 (en) | Ultra-hard constructions with erosion resistance | |
US10046441B2 (en) | PCD wafer without substrate for high pressure / high temperature sintering | |
US20190344350A1 (en) | Superhard constructions & methods of making same | |
GB2512776A (en) | Composite cutter substrate to mitigate residual stress | |
CN111629851A (en) | Polycrystalline superhard structures and methods of making same | |
US20170355017A1 (en) | Super hard components and powder metallurgy methods of making the same | |
US20140144713A1 (en) | Eruption control in thermally stable pcd products |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SMITH INTERNATIONAL, INC.,TEXAS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ZHANG, YOUHE;SHEN, YUELIN;SIGNING DATES FROM 20090914 TO 20090915;REEL/FRAME:023278/0959 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |