US20090325367A1 - Methods and apparatus for a chemical vapor deposition reactor - Google Patents
Methods and apparatus for a chemical vapor deposition reactor Download PDFInfo
- Publication number
- US20090325367A1 US20090325367A1 US12/475,131 US47513109A US2009325367A1 US 20090325367 A1 US20090325367 A1 US 20090325367A1 US 47513109 A US47513109 A US 47513109A US 2009325367 A1 US2009325367 A1 US 2009325367A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- track
- reactor
- wafer
- along
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/025—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G2207/00—Indexing codes relating to constructional details, configuration and additional features of a handling device, e.g. Conveyors
- B65G2207/06—Air cushion support of articles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
- This application claims benefit of U.S. Provisional Application Ser. No. 61/057,788, filed May 30, 2008; U.S. Provisional Application Ser. No. 61/104,284, filed Oct. 10, 2008; and U.S. Provisional Application Ser. No. 61/122,591, filed December 15, 2008, the disclosures of which are hereby incorporated by reference in their entirety.
- 1. Field of the Invention
- Embodiments of the invention generally relate to methods and apparatuses for vapor deposition, and more particularly, to chemical vapor deposition processes and chambers.
- 2. Description of the Related Art
- Chemical vapor deposition (“CVD”) is the deposition of a thin film on a substrate, such as a wafer, by the reaction of vapor phase chemicals. Chemical vapor deposition reactors are used to deposit thin films of various compositions on the substrate. CVD is highly utilized in many activities, such as during the fabrication of devices for semiconductor, solar, display, and other electronic applications.
- There are numerous types of CVD reactors for very different applications. For example, CVD reactors include atmospheric pressure reactors, low pressure reactors, low temperature reactors, high temperature reactors, and plasma enhanced reactors. These distinct designs address a variety of challenges that are encountered during a CVD process, such as depletion effects, contamination issues, and reactor maintenance.
- Notwithstanding the many different reactor designs, there is a continuous need for new and improved CVD reactor designs.
- Embodiments of the invention generally relate to a levitating substrate carrier or support. In one embodiment, a substrate carrier for supporting and carrying at least one substrate or wafer passing through a reactor is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. In another embodiment, the substrate carrier includes a substrate carrier body containing an upper surface and a lower surface, and at least two indentation pockets disposed within the lower surface. In another embodiment, the substrate carrier includes a substrate carrier body containing an upper surface and a lower surface, an indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface. In another embodiment, the substrate carrier includes a substrate carrier body containing an upper surface and a lower surface, an indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface, wherein each indentation pocket has a rectangular geometry and four side walls which extend perpendicular or substantially perpendicular to the lower surface. In another embodiment, the substrate carrier includes a substrate carrier body containing an upper surface and a lower surface, and at least two indentation pockets disposed within the lower surface, wherein each indentation pocket has a rectangular geometry and four side walls which extend perpendicular or substantially perpendicular to the lower surface.
- In another embodiment, a substrate carrier for supporting and carrying at least one substrate passing through a reactor is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. The substrate carrier body may have a rectangular geometry, a square geometry, or another type of geometry. In one example, the substrate carrier body has two short sides and two long sides, wherein one of the two short sides is the front of the substrate carrier body and the other short side is the rear of the substrate carrier body. The substrate carrier body may contain or be made from graphite.
- In some examples, the upper surface contains at least one indentation area disposed therein. The indentation area within the upper surface is configured to hold a substrate thereon. In other examples, the upper surface may have at least two, three, four, eight, twelve, or more of the indentation areas. In another example, the upper surface has no indentation areas.
- In another embodiment, the lower surface may have at least two of the indentation pockets, which are configured to accept a gas cushion. In some examples, the lower surface has one, three, or more of the indentation pockets. The indentation pocket may have a rectangular geometry, a square geometry, or another type of geometry. Each of the indentation pockets usually has two short sides and two long sides. In one example, the short sides and the long sides are straight. The short sides and the long sides are perpendicular relative to the lower surface. In another example, at least one of the two short sides is tapered at a first angle, at least one of the two long sides is tapered at a second angle, and the first angle may be greater than or less than the second angle. In another example, at least one of the two short sides is straight and at least one of the two long sides is tapered. In another example, at least one of the two short sides is tapered and at least one of the two long sides is straight. In one embodiment, the indentation pocket has a rectangular geometry and the indentation pocket is configured to accept a gas cushion. The indentation pocket may have tapered side walls which taper away from the upper surface.
- In another embodiment, a method for levitating substrates disposed on an upper surface of a substrate carrier during a vapor deposition process is provided which includes exposing a lower surface of a substrate carrier to a gas stream, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber. In many examples, the movement of the substrate carrier and/or the velocity of the substrate carrier along the path may be controlled by adjusting the flow rate of the gas stream. The gas cushion may be formed within at least one indentation pocket disposed within the lower surface. In some examples, the lower surface has at least two indentation pockets. The indentation pockets are configured to accept the gas cushion. An upper surface of the substrate carrier comprises at least one indentation area for supporting a substrate. The indentation pocket may have tapered side walls which taper away from the upper surface of the substrate carrier.
- In another embodiment, a method for levitating substrates disposed on a substrate carrier during a vapor deposition process is provided which includes exposing a lower surface of a substrate carrier to a gas stream, wherein at least one wafer is disposed on an upper surface of the substrate carrier and the lower surface contains at least one indentation pocket, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.
- In another embodiment, a method for levitating substrates disposed on a substrate carrier during a vapor deposition process is provided which includes exposing a lower surface of a substrate carrier to a gas stream, wherein the lower surface contains at least one indentation pocket, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.
- In another embodiment, a method for levitating substrates disposed on a substrate carrier during a vapor deposition process is provided which includes exposing a lower surface of a substrate carrier to a gas stream, wherein the lower surface contains at least two indentation pockets, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.
- Embodiments of the invention generally relate to a chemical vapor deposition reactor system and related methods of use. In one embodiment, a chemical vapor deposition system is provided which includes a lid assembly, such as a top plate, having a plurality of raised portions located along the longitudinal axis of the top plate. The system includes a track having a guide path, such as a channel, located along the longitudinal axis of the track, wherein the channel is adapted to receive the plurality of raised portions of the top plate, thereby forming a gap between the plurality of raised portions and a floor of the track, wherein the gap is configured to receive a substrate. The system includes a heating assembly, such as a heating element, operable to heat the substrate as the substrate moves along the channel of the track. In one embodiment, the track is operable to float the substrate along the channel of the track.
- In one embodiment, system includes a trough that supports the track. The gap may have a thickness between 0.5 and 5 millimeter or between 0.5 and 1 millimeter. The top plate is formed from molybdenum or quartz, the track is formed from quartz or silica. The top plate is operable to direct a gas to the gap and may further include a plurality of ports located along the longitudinal axis of the top plate and disposed between the plurality of raised portions, thereby defining paths between the plurality of raised portions. One or more of the plurality of ports is adapted to communicate and/or exhaust a gas to the gap between plurality of raised portions of the top plate and the floor of the track.
- Examples of the heating element include a heating lamp coupled to or with the track, a plurality of heating lamps disposed along the track, a heating lamp bank operable to move along the track as the substrate moves along the channel of the track, resistive heaters coupled to or with the track, an inductive heating source coupled to or with the substrate and/or the track. The heating element is operable to maintain a temperature differential across the substrate, wherein the temperature differential is less than 10 degrees Celsius. In one embodiment, the chemical vapor deposition system is an atmospheric pressure chemical vapor deposition system.
- In one embodiment, a chemical vapor deposition system is provided which includes an entrance isolator operable to prevent contaminants from entering the system at an entrance of the system; an exit isolator operable to prevent contaminants from entering the system at an exit of the system; and an intermediate isolator disposed between the entrance and exit isolators. The system may further include a first deposition zone disposed adjacent the entrance isolator and a second deposition zone disposed adjacent the exit isolator. The intermediate isolator is disposed between the deposition zones and is operable to prevent mixing of gases between the first deposition zone and the second deposition zone.
- In one embodiment, the entrance isolator is further operable to prevent back diffusion of gases injected into the first deposition zone, the intermediate isolator is further operable to prevent back diffusion of gases injected into the second deposition zone, and the exit isolator is further operable to prevent back diffusion of gases injected into the second deposition zone. An isolation zone formed by at least one of the isolators has a length between 1 to 2 meters. A gas, such as nitrogen, is injected into the entrance isolator at a first flow rate, such as about 30 liters per minute, to prevent back diffusion of gases from the first deposition zone. A gas, such as arsine, is injected into the intermediate isolator at a first flow rate, such as about 3 liters per minute, to prevent back mixing of gases between the first deposition zone and the second deposition zone. A gas, such as nitrogen, is injected into the exit isolator at a first flow rate, such as about 30 liters per minute, to prevent contaminants from entering the system at the exit of the system. In one embodiment, an exhaust is disposed adjacent each isolator and operable to exhaust gases injected by the isolators. An exhaust may be disposed adjacent each deposition zone and operable to exhaust gases injected into the deposition zones.
- In one embodiment, a chemical vapor deposition system is provided which includes a housing, a track surrounded by the housing, wherein the track defines a guide path, such as a channel, adapted to guide the substrate through the chemical vapor deposition system. The system includes a carrier for moving the substrate along the channel of the track, wherein the track is operable to levitate the carrier along the channel of the track. The housing is formed from molybdenum, quartz, or stainless steel, the track is formed from quartz, molybdenum, fused silica, ceramic, and the carrier is formed from graphite.
- In one embodiment, the track comprises a plurality of openings and/or a conduit disposed along the floor of the track each operable to supply a cushion of gas to the channel and the bottom surface of the carrier to lift or levitate the carrier and substantially center the carrier along the channel of the track. The conduit may have a v-shape and the carrier may have a notch (e.g. v-shape) disposed along its bottom surface. A gas is applied to the notch of the carrier to substantially lift the carrier from the floor of the track and to substantially center the carrier along the channel of the track. The track may be tilted, such as at an angle less than about ten, twenty, or between one and five degrees, to allow the substrate to move and float from a first end of the channel to a second end of the channel. The track and/or housing may include multiple segments.
- In one embodiment, the system may include a conveyor operable to automatically introduce substrates into the channel, a retriever operable to automatically retrieve substrates from the channel, and/or a heating element operable to heat the substrate. The heating element is coupled to or with the housing, the substrate, and/or the track. The carrier is operable to carry strips of the substrate along the channel of the track.
- In one embodiment, a track assembly for moving a substrate through a chemical vapor deposition system is provided which includes a top section having a floor, side supports, such as a pair of rails, disposed adjacent the floor, thereby defining a guide path, such as a channel, to guide the substrate along the floor. A bottom section is coupled to or with the top section to form one or more chambers therebetween. The top section may include a recessed bottom surface and the bottom section may include a recessed top surface to form the chamber. In one embodiment the top section and/or the bottom section is formed from molybdenum, quartz, silica, alumina, or ceramic.
- In one embodiment, the top section has a plurality of openings disposed through the floor to provide fluid communication between the chamber and the channel. A cushion of gas, such as nitrogen, is supplied from the chamber to the channel to substantially lift and carry the substrate from and along the floor of the top section. The floor may be tilted, such as at an angle less than about ten, twenty, or between one and five degrees, to allow the substrate to move and float from a first end of the channel to a second end of the channel.
- In one embodiment, the top section has a plurality of openings disposed through the pair of rails adjacent the floor. A gas is supplied through the plurality of openings to substantially center the substrate moving along the channel of the top section. The floor may also include a tapered profile and/or a conduit through which a gas is supplied each operable to substantially center the substrate moving along the channel of the top section. The conduit may have a v-shape and/or the substrate may have a notch (e.g. v-shaped) for receiving a gas cushion disposed along a bottom surface of the substrate operable to substantially center the substrate moving along the channel of the top section.
- In one embodiment, the track assembly may include a conveyor operable to automatically introduce substrates into the channel and/or a retriever operable to automatically retrieve substrates from the channel. An injection line may be coupled to or with the bottom section to supply a gas to the chamber through the floor to substantially float the substrate along the floor of the top section. The top section may further include recessed portions adjacent the rails operable to receive reactor lid assembly, such as a top plate. The track assembly may include a trough in which the top section and bottom section are seated. The trough is formed from quartz, molybdenum, or stainless steel.
- In one embodiment, a method for forming a multi-layered material during a chemical vapor deposition process is provided which includes forming a gallium arsenide buffer layer on a gallium arsenide substrate; forming an aluminum arsenide sacrificial layer on the buffer layer; and forming an aluminum gallium arsenide passivation layer on the sacrificial layer. The method may further include forming a gallium arsenide active layer (e.g. at about 1000 nanometers thick) on the passivation layer. The method may further include forming a phosphorous gallium arsenide layer on the active layer. The method may further include removing the sacrificial layer to separate the active layer from the substrate. The aluminum arsenide sacrificial layer may be exposed to an etching solution while the gallium arsenide active layer is separated from the substrate during an epitaxial lift off process. The method may further include forming additional multi-layered materials on the substrate during a subsequent chemical vapor deposition process. The buffer layer may be about 300 nanometers in thickness, the passivation layer may be about 30 nanometers in thickness, and/or the sacrificial layer may be about 5 nanometers in thickness.
- In one embodiment, a method for forming multiple epitaxial layers on a substrate using a chemical vapor deposition system is provided which includes introducing the substrate into a guide path, such as a channel, at an entrance of the system, while preventing contaminants from entering the system at the entrance; depositing a first epitaxial layer on the substrate, while the substrate moves along the channel of the system; depositing a second epitaxial layer on the substrate, while the substrate moves along the channel of the system; preventing mixing of gases between the first deposition step and the second deposition step; and retrieving the substrate from the channel at an exit of the system, while preventing contaminants from entering the system at the exit. The method may further include heating the substrate prior to depositing the first epitaxial layer; maintaining the temperature of the substrate as the first and second epitaxial layers are deposited on the substrate; and/or cooling the substrate after depositing the second epitaxial layer. The substrate may substantially float along the channel of the system. The first epitaxial layer may include aluminum arsenide and/or the second epitaxial layer may include gallium arsenide. In one embodiment, the substrate substantially floats along the channel of the system. The method may further include depositing a phosphorous gallium arsenide layer on the substrate and/or heating the substrate to a temperature within a range from about 300 degree Celsius to about 800 degrees Celsius during the depositing of the epitaxial layers. A center temperature to an edge temperature of the substrate may be within 10 degrees Celsius of each other.
- In one embodiment, a chemical vapor deposition reactor is provided which includes a lid assembly having a body, and a track assembly having a body and a guide path located along the longitudinal axis of the body. The body of the lid assembly and the body of the track assembly are coupled together to form a gap therebetween that is configured to receive a substrate. The reactor may further include a heating assembly containing a plurality of heating lamps disposed along the track assembly and operable to heat the substrate as the substrate moves along the guide path. The reactor may further include a track assembly support, wherein the track assembly is disposed in the track assembly support. The body of the track assembly may contain a gas cavity within and extending along the longitudinal axis of the body and a plurality of ports extending from the gas cavity to an upper surface of the guide path and configured to supply a gas cushion along the guide path. The body of the track assembly may comprise quartz. The body of the lid assembly may include a plurality of ports configured to provide fluid communication to the guide path. The heating assembly may be operable to maintain a temperature differential across the substrate, wherein the temperature differential is less than 10 degrees Celsius. In one embodiment, the chemical vapor deposition reactor is an atmospheric pressure chemical vapor deposition reactor.
- In one embodiment, a chemical vapor deposition system is provided which includes a entrance isolator operable to prevent contaminants from entering the system at an entrance of the system; an exit isolator operable to prevent contaminants from entering the system at an exit of the system; and a intermediate isolator disposed between the entrance and exit isolators. The system may further include a first deposition zone disposed adjacent the entrance isolator and a second deposition zone disposed adjacent the exit isolator. The intermediate isolator is disposed between the deposition zones and is operable to prevent mixing of gases between the first deposition zone and the second deposition zone. A gas is injected into the entrance isolator at a first flow rate to prevent back diffusion of gases from the first deposition zone, a gas is injected into the intermediate isolator at a first flow rate to prevent back mixing of gases between the first deposition zone and the second deposition zone, and/or a gas is injected into the exit isolator at a first flow rate to prevent contaminants from entering the system at the exit of the system. An exhaust may be disposed adjacent each isolator and operable to exhaust gases injected by the isolators and/or disposed adjacent each deposition zone and operable to exhaust gases injected into the deposition zones.
- In one embodiment, a chemical vapor deposition system is provided which includes a housing, a track surrounded by the housing, wherein the track contains a guide path adapted to guide a substrate through the chemical vapor deposition system, and a substrate carrier for moving the substrate along the guide path, wherein the track is operable to levitate the substrate carrier along the guide path. The track may include a plurality of openings operable to supply a gas cushion to the guide path. The gas cushion is applied to a bottom surface of the substrate carrier to lift the substrate carrier from a floor of the track. The track may include a conduit disposed along the guide path and operable to substantially center the substrate carrier along the guide path of the track. A gas cushion may be supplied through the conduit to a bottom surface of the substrate carrier to substantially lift the substrate carrier from a floor of the track. The track may be tilted to allow the substrate to move from a first end of the guide path to a second end of the guide path. The system may include a heating assembly containing a plurality of heating lamps disposed along the track and operable to heat the substrate as the substrate moves along the guide path.
- So that the manner in which the above recited features of the invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1A depicts a chemical vapor deposition reactor according to one embodiment of the invention; -
FIG. 1B depicts a perspective view of a reactor lid assembly according to one embodiment of the invention; -
FIG. 2 depicts a side perspective view of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 3 depicts a reactor lid assembly of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 4 depicts a top view of a reactor lid assembly of the chemical vapor deposition reactor according to another embodiment described herein; -
FIG. 5 depicts a wafer carrier track of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 6 depicts a front view of the wafer carrier track of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 7 depicts a side view of the wafer carrier track of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 8 depicts a perspective view of the wafer carrier track of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 9 depicts the reactor lid assembly and the wafer carrier track of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 10A depicts a chemical vapor deposition reactor according to one embodiment described herein; -
FIGS. 10B-10C depict a levitating wafer carrier according to another embodiment described herein; -
FIGS. 10D-10F depict other levitating wafer carriers according to another embodiment described herein; -
FIG. 11 depicts a first layout of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 12 depicts a second layout of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 13 depicts a third layout of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 14 depicts a fourth layout of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 15 depicts a fifth layout of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 16 depicts a sixth layout of the chemical vapor deposition reactor according to one embodiment described herein; -
FIG. 17 depicts a seventh layout of the chemical vapor deposition reactor according to one embodiment described herein; and -
FIG. 18 depicts flow path configurations of the chemical vapor deposition reactor according to one embodiment described herein. - Embodiments of the invention generally relate to an apparatus and a method of chemical vapor deposition (“CVD”). As set forth herein, embodiments of the invention is described as they relate to an atmospheric pressure CVD reactor and metal-organic precursor gases. It is to be noted, however, that aspects of the invention are not limited to use with an atmospheric pressure CVD reactor or metal-organic precursor gases, but are applicable to other types of reactor systems and precursor gases. To better understand the novelty of the apparatus of the invention and the methods of use thereof, reference is hereafter made to the accompanying drawings.
- According to one embodiment of the invention, an atmospheric pressure CVD reactor is provided. The CVD reactor may be used to provide multiple epitaxial layers on a substrate, such as a wafer, such as a gallium arsenide wafer. These epitaxial layers may include aluminum gallium arsenide, gallium arsenide, and phosphorous gallium arsenide. These epitaxial layers may be grown on the gallium arsenide wafer for later removal so that the wafer may be reused to generate additional materials. In one embodiment, the CVD reactor may be used to provide solar cells. These solar cells may further include single junction, heterojunction, or other configurations. In one embodiment, the CVD reactor may be configured to develop a 2.5 watt wafer on a 10 centimeter by 10 centimeter wafer. In one embodiment, the CVD reactor may provide a throughput range of about 1 wafer per minute to about 10 wafers per minute.
-
FIG. 1A shows aCVD reactor 10, according to one embodiment of the invention. Thereactor 10 includes areactor lid assembly 20, awafer carrier track 30, a wafercarrier track support 40, and aheating lamp assembly 50. Thereactor lid assembly 20 may be formed from molybdenum, molybdenum alloys, stainless steel, and quartz. Thereactor lid assembly 20 is disposed on thewafer carrier track 30. Thewafer carrier track 30 may be formed from quartz, molybdenum, silica (such as fused silica), alumina, or other ceramic materials. Thewafer carrier track 30 may be seated in a wafercarrier track support 40. The wafercarrier track support 40 may be formed from quartz or a metal, such as molybdenum, molybdenum alloys, steel, stainless steel, nickel, chromium, iron, or alloys thereof. Finally, a heating lamp assembly 50 (further discussed below with respect toFIG. 10 ) is disposed below the wafercarrier track support 40. The overall CVD reactor length may be in a range of about 18 feet to about 25 feet, but may extend beyond this range for different applications. -
FIGS. 1B , 2, 3, and 4 provide various views of embodiments of thereactor lid assembly 20. Referring toFIGS. 1B and 2 , thereactor lid assembly 20 may include a plate, such as abody 28 having anupper surface 29 and alower surface 27, havingflange members 25 extending from thelower surface 27, and/or having one or more raisedportions 26 centrally located between theflange members 25. In one embodiment, thebody 28 may define a rectangular shape. The raisedportions 26 may extend from thelower surface 27 of theplate 28 at different lengths along thereactor lid assembly 20. The raisedportions 26 are disposed between theflange members 25 so that clearances are formed between the raisedportions 26 and eachflange member 25. These clearances may be used to help couple thereactor lid assembly 20 to the wafer carrier track 30 (further described below). Both theflange members 25 and/or the raisedportions 26 may extend substantially the longitudinal length of thereactor lid assembly 20. Thereactor lid assembly 20 may be formed as a single solid structural component, or it may be constructed from several segments coupled together. Each raisedportion 26 may vary in length, height, width, and number, thereby defining “zones” which may be utilized for different applications in a CVD process. Thereactor lid assembly 20 may also include multiple patterns of raisedportions 26 along its length, such as to develop numerous layouts or stages in a CVD process. In one embodiment, theflange members 25 and/or the raisedportions 26 may define a circular shape, a square shape, a rectangular shape, or combinations thereof. In one embodiment, theflange members 25 and/or the raisedportions 26 may include solid structures. In one embodiment, theflange members 25 and/or the raisedportions 26 may be removable from thebody 28 of thereactor lid assembly 20. In one embodiment, the raisedportions 26 include openings disposed through the raised portions, thereby defining housings in which one or more gas manifold assemblies (further described below) may be located to communicate gases with thereactor 10. Thebody 28 may include corresponding openings through which the gas manifold assemblies may be placed into the raisedportions 26. In one embodiment, thereactor lid assembly 20 may include thebody 28 with one or more openings disposed through the body from theupper surface 29 to thelower surface 27. -
FIG. 3 also shows thereactor lid assembly 20 according to one embodiment. As stated above, thereactor lid assembly 20 as shown inFIG. 3 may represent an entire structure or a single segment of a larger constructed structure. Also shown, are one or more openings, such as a plurality of inlet andoutlet ports 21 disposed through theupper surface 29 of thebody 28 and centrally located along the longitudinal axis of thereactor lid assembly 20. Theports 21 may vary in size, shape, number, and location along theupper surface 29 of thebody 28. In one embodiment, theports 21 may define a circular shape, a square shape, a rectangular shape, or combinations thereof. Theports 21 may extend through thebody 28 from theupper surface 29 to thelower surface 27. Theports 21 may be used as injection, deposition, and/or exhaust ports for communicating a gas into and/or out of the CVD reactor. In one embodiment, eachport 21 is disposed between two adjacent raised portions 26 (as show inFIG. 2 ), thereby defining “paths” through which injection, deposition, and/or exhaustion of a gas may take place. In one example, a gas may be injected into aport 21 so that the gas first travels along the sides of the adjacent raisedportions 26 and then travels along the bottom surfaces of the raisedportions 26 and into the flow path of a wafer. As shown inFIG. 3 , theflange members 25 are enclosed at the ends of thebody 28 to encapsulate any fluids that are communicated to the “zones” and “paths” created by theports 21 and the raisedportions 26 of thereactor lid assembly 20. -
FIG. 4 shows a top view of thereactor lid assembly 20, according to one embodiment, having one or more openings, such asdeposition ports 23,exhaust ports 22, and injection ports 24 (also shown inFIG. 1B ) disposed through thebody 28. The openings may be disposed through thebody 28 from theupper surface 29 to thelower surface 27. These ports may be fitted with removable isolator, showerhead, exhaust, or other gas manifold assemblies, which may extend beyond thelower surface 27 of thebody 28, to facilitate distribution of a gas, into and/or out of the CVD reactor, and specifically to uniformly apply the gas to a wafer passing beneath the assemblies. In one embodiment, theports reactor lid assembly 20 may be configured to provide a high reactant utilization, meaning that the gases utilized in the reactor are nearly 100 percent consumed by the reactions during the CVD process. - The
exhaust ports 22 and theinjection ports 24 may be used to develop “isolation curtains” to help prevent contamination and to help prevent back diffusion of the gases introduced into theCVD reactor 10 between the various zones created in the reactor. These “isolation curtains” may be introduced at the front end (entrance) and the back end (exit) of theCVD reactor 10, as well as between the various zones created within theCVD reactor 10. In one example, nitrogen or argon may be injected into aninjection port 24 to purge contaminants, such as oxygen, out of a particular zone, which are then exhausted out of anadjacent exhaust port 22. By utilizing the “isolation curtains” with the “paths” and “zones” created by thereactor lid assembly 20, theCVD reactor 10 limits the gas isolation to a two dimension configuration that protects between zones and isolates the reactor from outside contaminants, such as air. -
FIGS. 2 , 5, 6, 7, and 8 provide various views of embodiments of thewafer carrier track 30. Thewafer carrier track 30 may provide a levitation-type system so that a wafer may float across a cushion of a gas, such as nitrogen or argon, supplied from the gas holes 33 of thewafer carrier track 30. Referring back toFIG. 2 , thewafer carrier track 30 generally defines a rectangular body having anupper portion 31 and alower portion 32. Theupper portion 31 includes side surfaces 35 extending from the top surface of thewafer carrier track 30 and disposed along the longitudinal length of thewafer carrier track 30, thereby defining a “guide path” along which a wafer travels through the CVD reactor. The width of the guide path (e.g. the distance between the inner sides of the side surfaces 35) may be in a range of about 110 millimeters to about 130 millimeters, the height of the guide path may be in a range of about 30 millimeters to about 50 millimeters, and the length of the guide path may be in a range of about 970 millimeters to about 1030 millimeters, however, these dimensions may extend beyond these ranges for different applications. Theupper portion 31 may include a recessed bottom surface, and the bottom section may include a recessed top surface, such that when joined together, agas cavity 36 is formed therebetween. Thegas cavity 36 may be used to circulate and distribute gas that is injected into thegas cavity 36 to the guide path of thewafer carrier track 30 to generate the cushion of gas. The number, size, shape, and location of thegas cavity 36 along thewafer carrier track 30 may vary. Both the side surfaces 35 and thegas cavity 36 may extent substantially the longitudinal length of thewafer carrier track 30. Thewafer carrier track 30 may be formed as a single solid structural component, or it may be constructed from several segments coupled together. In one embodiment, thewafer carrier track 30 may be tilted at an angle, such that the entrance is elevated above the exit, so that the wafers may float down the track with the aid of gravity. As discussed above, the side surfaces 35 of thewafer carrier track 30 may be received into the gaps formed between the raisedportions 26 and theflange members 25 of thereactor lid assembly 20 to enclose the “guide path” along thewafer carrier track 30 and to further define the “zones” formed with the raisedportions 26 along thewafer carrier track 30. -
FIG. 5 shows an embodiment of thewafer carrier track 30. As shown,wafer carrier track 30 includes a plurality ofgas holes 33 along the guide path of thewafer carrier track 30 and between the side surfaces 35. The gas holes 33 may be uniformly disposed along the guide path of thewafer carrier track 30 in multiple rows. The diameter of the gas holes 33 may include a range of about 0.2 millimeters to about 0.10 millimeters and the pitch of the gas holes 33 may include a range of about 10 millimeters to about 30 millimeters, but these dimensions may extend beyond these ranges for different applications. The number, size, shape, and location of the gas holes 33 along thewafer carrier track 30 may vary. In an alternative embodiment, the gas holes 33 may include rows of rectangular slits or slots disposed along the guide path of thewafer carrier track 30. - Gas holes 33 are in communication with the
gas cavity 36 disposed beneath the guide path of thewafer carrier track 30. Gas that is supplied to thegas cavity 36 is uniformly released through the gas holes 33 to develop a cushion of gas along thewafer carrier track 30. A wafer positioned on the guide path of thewafer carrier track 30 may be levitated by the gas supplied from underneath and easily transported along the guide path of thewafer carrier track 30. The gap between a levitated wafer and the guide path of thewafer carrier track 30 may be greater than about 0.05 millimeters, but may vary depending on different applications. This levitation-type system reduces any drag effects produced by continuous direct contact with the guide path of thewafer carrier track 30. In addition,gas ports 34 may be provided along the sides of the side surfaces 35 adjacent the guide path of thewafer carrier track 30. Thesegas ports 34 may be used as an exhaust for the gas that is supplied through theports 30. Alternatively, thesegas ports 34 may be used to inject gas laterally into the center of thewafer carrier track 30 to help stabilize and center a wafer that is floating along the guide path of thewafer carrier track 30. In an alternative embodiment, the guide path of thewafer carrier track 30 may include a tapered profile to help stabilize and center a wafer that is floating along the guide path of thewafer carrier track 30. -
FIG. 6 shows a front view embodiment of thewafer carrier track 30. As shown, thewafer carrier track 30 includes theupper portion 31 and thelower portion 32. Theupper portion 31 includes side surfaces 35 that define the “guide path” along the length of thewafer carrier track 30. Theupper portion 31 may further include side surfaces 35 that define recessedportions 39 between the sides of the side surfaces 35. These recessedportions 39 may be adapted to receive theflange members 25 of the reactor lid assembly 20 (shown inFIG. 2 ) to couple thereactor lid assembly 20 and thewafer carrier track 30 together and enclose the guide path along thewafer carrier track 30. Also show inFIG. 5 aregas holes 33 extending from the guide path of thewafer carrier track 30 to thegas cavity 36. Thelower portion 32 may act as a support for theupper portion 31 and may include a recessed bottom surface. Aninjection line 38 may be connected to thelower portion 32 so that gas may be injected through theline 38 and into thegas cavity 36. -
FIG. 7 shows a side view of thewafer carrier track 30 having asingle injection line 38 into agas cavity 36 along the entirewafer carrier track 30 length. Alternatively, thewafer carrier track 30 may includemultiple gas cavities 36 andmultiple injection lines 38 along its length. Alternatively still, thewafer carrier track 30 may include multiple segments, each segment having a single gas cavity and asingle injection line 38. Alternatively still, thewafer carrier track 30 may include combinations of the above describedgas cavity 36 andinjection line 38 configurations. -
FIG. 8 shows a cross sectional perspective view embodiment of thewafer carrier track 30 having theupper portion 31 and thelower portion 32. Theupper portion 31 having side surfaces 35, gas holes 33, and thegas cavity 36 disposed on thelower portion 32. In this embodiment, the side surfaces 35 and thelower portion 32 are hollow, which may substantially reduce the weight of thewafer carrier track 30 and may enhance the thermal control of thewafer carrier track 30 relative to the wafers traveling along thewafer carrier track 30. -
FIG. 9 shows thereactor lid assembly 20 coupled to or with thewafer carrier track 30. O-rings may be used to seal thereactor lid assembly 20 andwafer carrier track 30 interfaces. As shown, the entrance into theCVD reactor 10 may be sized to receive varying sizes of wafers. In one embodiment, agap 60, formed between the raisedportions 26 of thereactor lid assembly 20 and the guide path of thewafer carrier track 30, in which the wafer is received, is dimensioned to help prevent contaminants from entering theCVD reactor 10 at either end, dimensioned to help prevent back diffusion of gases between zones, and dimensioned to help ensure that the gases supplied to the wafer during the CVD process are uniformly distributed across the thickness of the gap and across the wafer. In one embodiment, thegap 60 may be formed between thelower surface 27 of thebody 28 and the guide path of thewafer carrier track 30, In one embodiment, thegap 60 may be formed between the lower surface of the gas manifold assemblies and the guide path of thewafer carrier track 30, In one embodiment, thegap 60 may be in the range of about 0.5 millimeters to about 5 millimeters in thickness and may vary along the length of thereactor lid assembly 20 andwafer carrier track 30. In one embodiment, the wafer may have a length in the range of about 50 millimeters to about 150 millimeters, a width in the range of about 50 millimeters to about 150 millimeters, and a thickness in the range of about 0.5 millimeters to about 5 millimeters. In one embodiment, the wafer may include a base layer having individual strips of layers disposed on the base layer. The individual strips are treated in the CVD process. These individual strips may include about a 10 centimeter length by about a 1 centimeter width (although other sizes may be utilized as well), and may be formed in this manner to facilitate removal of the treated strips from the wafer and to reduce the stresses induced upon the treated strips during the CVD process. TheCVD reactor 10 may be adapted to receive wafers having dimensions that extend beyond the above recited ranges for different applications. - The
CVD reactor 10 may be adapted to provide an automatic and continuous feed and exit of wafers into and out of the reactor, such as with a conveyor-type system. A wafer may be fed into theCVD reactor 10 at one end of the reactor, by a conveyor for example, communicated through a CVD process, and removed at the opposite end of the reactor, by a retriever for example, using a manual and/or automated system. TheCVD reactor 10 may be adapted to produce wafers in the range of one wafer about every 10 minutes to one wafer about every 10 seconds, and may extend beyond this range for different applications. In one embodiment, theCVD reactor 10 may be adapted to produce 6-10 treated wafers per minute. -
FIG. 10A shows an alternative embodiment of aCVD reactor 100. TheCVD reactor 100 includes areactor body 120, awafer carrier track 130, awafer carrier 140, and aheating lamp assembly 150. Thereactor body 120 may define a rectangular body and may be formed from molybdenum, quartz, stainless steel, or other similar material. Thereactor body 120 may enclose thewafer carrier track 130 and extend substantially the length of thewafer carrier track 130. Thewafer carrier track 130 may also define a rectangular body and may be formed from quartz or other low thermal conductive material to assist with temperature distribution during the CVD process. Thewafer carrier track 130 may be configured to provide a levitation-type system that supplies a cushion of gas to communicate a wafer along thewafer carrier track 130. As shown, a conduit, such as agas cavity 137 having a v-shapedroof 135 is centrally located along the longitudinal axis of the guide path of thewafer carrier track 130. Gas is supplied throughgas cavity 137 and is injected through gas holes in theroof 135 to supply the cushion of gas that floats a wafer having a corresponding v-shaped notch (not shown) on its bottom surface along thewafer carrier track 130. In one embodiment, thereactor body 120 and thewafer carrier track 130 each are a single structural component. In an alternative embodiment, thereactor body 120 includes multiple segments coupled together to form a complete structural component. In an alternative embodiment, thewafer carrier track 130 includes multiple segments coupled together to form a complete structural component. - Also shown in
FIG. 10A is awafer carrier 140 adapted to carry a single wafer (not shown) or strips 160 of a wafer along thewafer carrier track 130. Thewafer carrier 140 may be formed from graphite or other similar material. In one embodiment, thewafer carrier 140 may have a v-shapednotch 136 along its bottom surface to correspond with the v-shapedroof 135 of thewafer carrier track 130. The v-shapednotch 136 disposed over the v-shapedroof 135 helps guide thewafer carrier 140 along thewafer carrier track 130. Thewafer carrier 140 may be used to carry the wafer strips 160 through the CVD process to help reduce the thermal stresses imparted on the wafer during the process. Gas holes in theroof 135 of thegas cavity 137 may direct a cushion of gas along the bottom of thewafer carrier 140, which utilizes the corresponding v-shaped feature to help stabilize and center thewafer carrier 140, and thus thestrips 160 of wafer, during the CVD process. As stated above, a wafer may be provided instrips 160 to facilitate removal of the treated strips from thewafer carrier 140 and to reduce the stresses induced upon the strips during the CVD process. - In another embodiment,
FIGS. 10B-10F depict awafer carrier 70 which may be used to carry a wafer through a variety of processing chambers including the CVD reactors as described herein, as well as other processing chambers used for deposition or etching. Thewafer carrier 70 hasshort sides 71, long sides 73, anupper surface 72, and alower surface 74. Thewafer carrier 70 is illustrated with a rectangular geometry, but may also have a square geometry, a circular geometry, or other geometries. Thewafer carrier 70 may contain or be formed from graphite or other materials. Thewafer carrier 70 usually travels through the CVD reactor with theshort sides 71 facing forward while thelong sides 73 face towards the sides of the CVD reactor. -
FIG. 10B illustrates a top view of thewafer carrier 70 containing 3indentations 75 on theupper surface 72. Wafers may be positioned within theindentations 75 while being transferred through the CVD reactor during a process. Although illustrated with 3indentations 75, theupper surface 72 may have more or less indentations, including no indentations. For example, theupper surface 72 of thewafer carrier 70 may contain 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 12, or more indentations for containing wafers. In some example, one or multiple wafers may be disposed directly on theupper surface 72 which does not have an indentation. -
FIG. 10C illustrates a bottom view of thewafer carrier 70 containing theindentation 78 on thelower surface 74, as described in one embodiment herein. Theindentation 78 may be used to help levitate thewafer carrier 70 upon the introduction of a gas cushion under thewafer carrier 70. A gas flow may be directed at theindentation 78, which accumulates gas to form the gas cushion. Thelower surface 74 of thewafer carrier 70 may have no indentations, or may have one indentation 78 (FIG. 10C ), two indentations 78 (FIGS. 10D-10F ), three indentations 78 (not shown) or more. Theindentation 78 may have straight or tapered sides. In one example, theindentation 78 has tapered sides such that thesides 76 are steeper or more abrupt than thesides 77 which have more of a gradual change of angle. Thesides 77 within theindentation 78 may be tapered to compensate for a thermal gradient across thewafer carrier 70. In another example, theindentation 78 has straight sides and tapered sides such that thesides 76 are straight and thesides 77 have a taper or thesides 77 are straight and thesides 76 have a taper. Alternatively, theindentation 78 may have all straight sides such that thesides - In another embodiment,
FIGS. 10D-10F illustrate bottom views of thewafer carrier 70 containing twoindentations 78 on thelower surface 74. The twoindentations 78 help levitate thewafer carrier 70 upon the introduction of a gas cushion under thewafer carrier 70. A gas flow may be directed at theindentations 78, which accumulates gas to form the gas cushion. Theindentations 78 may have straight or tapered sides. In one example, as illustrated inFIG. 10E , theindentations 78 have all straight sides such that thesides lower surface 74. In another example, as illustrated inFIG. 10F , theindentations 78 have all tapered sides such that thesides 76 are steeper or more abrupt than thesides 77 which have more of a gradual change of angle. Thesides 77 within theindentations 78 may be tapered to compensate for a thermal gradient across thewafer carrier 70. Alternatively, theindentations 78 may have a combination of straight sides and tapered sides such that thesides 76 are straight and thesides 77 have a taper or thesides 77 are straight and thesides 76 have a taper. - The
wafer carrier 70 contains a heat flux which extends from thelower surface 74 to theupper surface 72 and to any wafers disposed thereon. The heat flux may be controlled by both the internal pressure and length of the processing system. The profile ofwafer carrier 70 may be tapered to compensate the heat loses from other sources. During a process, heat is lost through the edges of thewafer carrier 70, such as theshort sides 71 and the long sides 73. However, the heat lost may be compensated by allowing more heat flux into the edges of thewafer carrier 70 by reducing the gap of the guide path in the levitation. -
FIG. 10A also depicts thereactor body 120 disposed on theheating lamp assembly 150. Theheating lamp assembly 150 may be configured to control the temperature profile within the CVD reactor by increasing and decreasing the temperature of thereactor body 120, thewafer carrier track 130, and specifically the wafer, along the length of the CVD reactor. Theheating lamp assembly 150 may include a plurality of heating lamps disposed along the longitudinal length of thewafer carrier track 130. In one embodiment, theheating lamp assembly 150 includes individually controlled heating lamps disposed along the length of thewafer carrier track 130. In an alternative embodiment, theheating lamp assembly 150 includes a bank of heating lamps that are movable and follow a wafer as it travels along thewafer carrier track 130. The embodiments of theheating lamp assembly 150 may also be used as theheating lamp assembly 50, described above with respect toFIG. 1 . - In an alternative embodiment, other types of heating assemblies (not shown) may be utilized to heat the
reactor body 120 instead of theheating lamp assembly 150. In one embodiment, a heating assembly may include resistive heating elements, such as resistive heaters, which may be individually controlled along the length of thewafer carrier track 130. In one example, a resistive heating element may be bonded to or painted onto thereactor body 120, thewafer carrier track 130, or thewafer carrier 140. In alternative embodiment, another type of heating assembly that may be utilized to heat thereactor body 120 is an inductive heating element, such as with a radio frequency power source (not shown). The inductive heating element may be coupled to or with thereactor body 120, thewafer carrier track 130, and/or thewafer carrier 140. Embodiments of the various types of heating assemblies (includingheating lamp assemblies 50 and 150) described herein may be utilized independently or in combination with the CVD reactor. - In one embodiment, the
heating lamp assembly 150 may be configured to heat a wafer in the CVD reactor to a temperature within a range from about 300 degree Celsius to about 800 degrees Celsius. In one embodiment, theheating lamp assembly 150 may be configured to raise the temperature of the wafer to an appropriate process temperature prior to introduction into a deposition zone of the CVD reactor. In one embodiment, theheating lamp assembly 150 may be configured with the CVD reactor to bring the wafer to a temperature within a range from about 300 degree Celsius to about 800 degrees prior to introduction into a deposition zone of the CVD reactor. In one embodiment, the wafer may be heated to within a process temperature range prior to entering one or more deposition zones of the CVD reactor to facilitate the deposition processes, and the temperature of the wafer may be maintained within the process temperature range as the wafer passes through the one or more deposition zones. The wafer may be heated to and maintained within the process temperature range as it moves along the wafer carrier track. A center temperature to an edge temperature of the wafer may be within 10 degrees Celsius of each other. -
FIGS. 11-17 illustrate various configurations of CVD processes that can be utilized with the CVD reactor as described herein.FIG. 11 illustrates afirst configuration 200, having anentrance isolator assembly 220, afirst isolator assembly 230, asecond isolator assembly 240, athird isolator assembly 250, and anexit isolator assembly 260. A plurality ofdeposition zones 290 may be located along the wafer carrier track of the CVD reactor and may be surrounded by the isolator assemblies. Between each of these isolator assemblies, one ormore exhausts 225 may be provided to remove any gases that are supplied to the wafer at each isolator assembly or deposition zone. As shown, a precursor gas may be injected at theentrance isolator assembly 220, which follows a two dimensional flow path, e.g. down to the wafer and then along the length of the wafer carrier track, indicated byflow path 210 for example. The gas is then exhausted up throughexhaust 225, which may be provided on each side of theisolator assembly 220. The gas may be directed at theentrance isolator assembly 220 and then along the length of the wafer carrier track, indicated byflow path 215 for example, to prevent contaminants from entering the entrance of the CVD reactor. Gas injected at the intermediate isolator assemblies, such asisolator assembly 230, or at thedeposition zones 290, may travel upstream from the flow of the wafer, indicated byflow path 219 for example. This back diffusion of gas may be received through the adjacent exhaust to prevent contaminants or mixing of gases between zones along the wafer carrier track of the CVD reactor. In addition, the flow rate of the gases injected through the isolator assemblies, e.g. alongflow path 210, in the direction of the wafer flow may also be adapted to further prevent back diffusion from entering the isolation zone. The laminar flow alongflow path 210 may be flowed at different flow rates to meet any back diffusion of gas, for example atjunction 217 belowexhaust 225, to prevent the back diffusion of gas fromisolator assembly 230 from entering the isolation zone developed byisolator assembly 220. In one embodiment, the wafer may be heated to within a process temperature range as it travels along the wafer carrier track prior to entering thedeposition zones 290. The temperature of the wafer may be maintained within the process temperature range as it travels along the wafer carrier track through thedeposition zones 290. The wafer may be cooled to within a specific temperature range upon exiting thedeposition zones 290 as it travels along the remainder of the wafer carrier track. - The lengths of the isolation zones and the deposition zones may be varied to reduce the effects of back diffusion of gases. In one embodiment, the lengths of the isolation zones created may range from about 1 meter to about 2 meters in length but may extend beyond this range for different applications.
- The flow rates of the gases injected from the isolator assemblies may also be varied to reduce the effects of back diffusion of gases. In one embodiment, the
entrance isolator assembly 220 and theexit isolator assembly 260 may supply a precursor gas at about 30 liters per minute, while the first 230, second 240, and third 250 isolator assemblies may supply a precursor gas at about 3 liters per minute. In one embodiment, the precursor gas supplied at theentrance isolator assembly 220 and theexit isolator assembly 260 may include nitrogen. In one embodiment, the precursor gas supplied at the first 230, second 240, and third 250 isolator assemblies may include arsine. In one embodiment, two isolator assemblies may supply a total of about 6 liters per minute of nitrogen. In one embodiment, three isolator assemblies may supply a total of about 9 liters per minute of arsine. - The gap, e.g. the thickness between the guide path of the wafer carrier track and the raised portion of the reactor lid assembly, alternatively, the thickness of the space through which wafer travels into and out of the CVD reactor, of the isolation zones may also be varied to reduce the effects of back diffusion of gases. In one embodiment, the isolator gap may be in a range of about 0.1 millimeters to about 5 millimeters.
-
FIG. 18 illustrates severalflow path configurations 900 which may be provided by the CVD reactor. Theflow path configurations 900 may be used for injecting a gas through one or more isolator assemblies, injecting a gas into a deposition zone, and/or exhausting a gas from isolation and/or deposition zones. Dualflow path configuration 910 shows a gas directed in the same direction as the flow path of the wafer, as well as in the opposite direction of the flow path of the wafer. In addition, a larger volume of flow may be directed through the dualflow path configuration 910 due to thewider flow area 911. Thiswider flow area 911 may be adapted for use with the other embodiments described herein. Singleflow path configuration 920 shows a gas directed in a single direction, which may be in the same or opposite direction of the flow path of the wafer. In addition, a low volume of flow may be directed through the singleflow path configuration 920 due to thenarrow flow area 921. Thisnarrower flow area 921 may be adapted for use with the other embodiments described herein. Exhaustflow path configuration 930 shows that gas may be exhausted from adjacent zones through awider flow area 931, such as adjacent isolation zones, adjacent deposition zones, or an isolation zone adjacent to a deposition zone. - In one embodiment, first exhaust/injector
flow path configuration 940 shows a dualflow path configuration 941 having anarrow flow area 943 disposed between anexhaust flow path 944 and a singleinjection flow path 945. Also shown is anarrower gap 942 portion along which the wafer may travel through the CVD reactor. As described above, thegap 942 may vary along the wafer carrier track of the CVD reactor, thereby allowing a gas to be directly and uniformly injected onto the surface of the wafer. Thisnarrower gap 942 portion may be used to provide full consumption or near full consumption of the gas injected onto the wafer during a reaction in a deposition zone. In addition, thegap 942 may be used to facilitate thermal control during the isolation and/or deposition process. A gas injected in thenarrower gap 942 portion may maintain a higher temperature as it is injected onto the wafer. - In one embodiment, a second exhaust/injector
flow path configuration 950 provides a firstexhaust flow path 954 having a wide flow area, a first dualflow path configuration 951 having anarrow gap portion 952 andflow area 953, a first singleinjection flow path 955 having a wide flow area, a plurality of singleinjection flow paths 956 having narrow flow areas a wide gap portion, a secondexhaust flow path 957 having a wide flow area, a second dualflow path configuration 958 having anarrow gap portion 959 and flow area, and a second singleinjection flow path 960 having a wide flow area and gap portion. - In one embodiment, the gas injected through the isolator assemblies may be directed in the same direction as the flow path of the wafer. In an alternative embodiment, the gas injected through the isolator assemblies may be directed in the opposite direction as the flow path of the wafer. In an alternative embodiment, the gas injected through the isolator assemblies may be directed in both the same and opposite direction as the flow path of the wafer. In an alternative embodiment, the isolator assemblies may direct gas in different directions depending on their location in the CVD reactor.
- In one embodiment, the gas injected into the deposition zones may be directed in the same direction as the flow path of the wafer. In an alternative embodiment, the gas injected into the deposition zones may be directed in the opposite direction as the flow path of the wafer. In an alternative embodiment, the gas injected into the deposition zones may be directed in both the same and opposite direction as the flow path of the wafer. In an alternative embodiment, gas may be directed in different directions depending on the location of the deposition zone in the CVD reactor.
-
FIG. 12 illustrates asecond configuration 300. The wafer(s) 310 is introduced into the entrance of the CVD reactor and travels along the wafer carrier track of the reactor. Thereactor lid assembly 320 provides severalgas isolation curtains 350 located at the entrance and the exit of the CVD reactor, as well as betweendeposition zones reactor lid assembly 320. These deposition zones include an aluminumarsenide deposition zone 340, a galliumarsenide deposition zone 380, and a phosphorous galliumarsenide deposition zone 390, thereby forming a multiple layer epitaxial deposition process and structure. As the wafer(s) 310 travels along thebottom portion 330 of the reactor, which may generally include the wafer carrier track and the heating lamp assembly, thewafer 310 may be subjected totemperature ramps 360 at the entrance and exit of the reactor to incrementally increase and decrease the temperature of the wafer, prior to entering and upon exiting thedeposition zones wafer 310. Thewafer 310 may be heated to within a process temperature range prior to entering thedeposition zones wafer 310 travels through thedeposition zones thermal region 370 to assist with the deposition processes. The wafer(s) 310 may be provided on a conveyorized system to continuously feed and receive wafers into and out of the CVD reactor. -
FIG. 13 illustrates athird configuration 400. The CVD reactor may be configured to supplynitrogen 410 to the reactor to float the wafer(s) along the wafer carrier track of the reactor at the entrance and the exit. A hydrogen/arsine mixture 420 may also be used to float the wafer along the wafer carrier track of the CVD reactor between the exit and entrance. The stages of thethird configuration 400 may be provided by one or more gas manifold assemblies of the reactor lid assembly. The stages along the wafer carrier track may include an entrancenitrogen isolation zone 415, apreheat exhaust zone 425, a hydrogen/arsine mixturepreheat isolation zone 430, a galliumarsenide deposition zone 435, agallium arsenide exhaust 440, an aluminum galliumarsenide deposition zone 445, a gallium arsenide N-layer deposition zone 450, a gallium arsenide P-layer deposition zone 455, a phosphorous hydrogenarsine isolation zone 460, a first phosphorous aluminum galliumarsenide deposition zone 465, a phosphorous aluminum galliumarsenide exhaust zone 470, a second phosphorous aluminum galliumarsenide deposition zone 475, a hydrogen/arsine mixture cool downisolation zone 480, a cool downexhaust zone 485, and an exitnitrogen isolation zone 490. As the wafer travels along the bottom portion of the reactor, which may generally include the wafer carrier track and the heating lamp assembly, the wafer may be subjected to one ormore temperature ramps 411 at the entrance and exit of the reactor to incrementally increase and decrease the temperature of the wafer, prior to entering and upon exiting thedeposition zones deposition zones deposition zones thermal region 412 to assist with the deposition processes. As shown, the temperature of the wafer traveling through thethird configuration 400 may be increased as it passes theentrance isolation zone 415, may be maintained as is travels through thezones isolation zone 480 and travels along the remainder of the wafer carrier track. -
FIG. 14 illustrates afourth configuration 500. The CVD reactor may be configured to supplynitrogen 510 to the reactor to float the wafer(s) along the wafer carrier track of the reactor at the entrance and the exit. A hydrogen/arsine mixture 520 may also be used to float the wafer along the wafer carrier track of the CVD reactor between the exit and entrance. The stages of thefourth configuration 500 may be provided by one or more gas manifold assemblies of the reactor lid assembly. The stages along the wafer carrier track may include an entrancenitrogen isolation zone 515, apreheat exhaust zone 525, a hydrogen/arsine mixturepreheat isolation zone 530, anexhaust zone 535, adeposition zone 540, anexhaust zone 545, a hydrogen/arsine mixture cool downisolation zone 550, a cool downexhaust zone 555, and an exitnitrogen isolation zone 545. In one embodiment, thedeposition zone 540 may include an oscillating showerhead assembly. As the wafer travels along the bottom portion of the reactor, which may generally include the wafer carrier track and the heating lamp assembly, the wafer may be subjected to one ormore temperature ramps deposition zone 540 to reduce thermal stress imparted on the wafer. The wafer may be heated to within a process temperature range prior to entering thedeposition zone 540 to facilitate the deposition process. In one embodiment, the wafer may be heated and/or cooled to within a first temperature range as it travels through the temperature ramps 511. In one embodiment, the wafer may be heated and/or cooled to within a second temperature range as it travels through the temperature ramps 513. The first temperature range may be greater than, less than, and/or equal to the second temperature range. As the wafer travels through thedeposition zone 540 the temperature of the wafer may be maintained within athermal region 512 to assist with the deposition processes. As shown, the temperature of the wafer traveling through thefourth configuration 500 may be increased as it passes theentrance isolation zone 515, may be maintained as is travels through thedeposition zone 540, and may be decreased as it nears the hydrogen/arsine mixture cool downisolation zone 550 and travels along the remainder of the wafer carrier track. -
FIG. 15 illustrates afifth configuration 600. The CVD reactor may be configured to supplynitrogen 610 to the reactor to float the wafer(s) along the wafer carrier track of the reactor at the entrance and the exit. A hydrogen/arsine mixture 620 may also be used to float the wafer along the wafer carrier track of the CVD reactor between the exit and entrance. The stages of thefifth configuration 600 may be provided by one or more gas manifold assemblies of the reactor lid assembly. The stages along the wafer carrier track may include an entrancenitrogen isolation zone 615, a preheat exhaust with flowbalance restrictor zone 625, an active hydrogen/arsinemixture isolation zone 630, a galliumarsenide deposition zone 635, an aluminum galliumarsenide deposition zone 640, a gallium arsenide N-layer deposition zone 645, a gallium arsenide P-layer deposition zone 650, a phosphorous aluminum galliumarsenide deposition zone 655, a cool downexhaust zone 660, and an exitnitrogen isolation zone 665. As the wafer travels along the bottom portion of the reactor, which may generally include the wafer carrier track and the heating lamp assembly, the wafer may be subjected to one ormore temperature ramps 611 at the entrance and exit of the reactor to incrementally increase and decrease the temperature of the wafer, prior to entering and upon exiting thedeposition zones deposition zones deposition zones thermal region 612 to assist with the deposition processes. As shown, the temperature of the wafer traveling through thefifth configuration 600 may be increased as is passes theentrance isolation zone 615 and approaches the active hydrogen/arsinemixture isolation zone 630, may be maintained as it travels through thedeposition zones exhaust zone 660 and travels along the remainder of the wafer carrier track. -
FIG. 16 illustrates asixth configuration 700. The CVD reactor may be configured to supplynitrogen 710 to the reactor to float the wafer(s) along the wafer carrier track of the reactor at the entrance and the exit. A hydrogen/arsine mixture 720 may also be used to float the wafer along the wafer carrier track of the CVD reactor between the exit and entrance. The stages of thesixth configuration 700 may be provided by one or more gas manifold assemblies of the reactor lid assembly. The stages along the wafer carrier track may include an entrancenitrogen isolation zone 715, a preheat exhaust with flowbalance restrictor zone 725, a galliumarsenide deposition zone 730, an aluminum galliumarsenide deposition zone 735, a gallium arsenide N-layer deposition zone 740, a gallium arsenide P-layer deposition zone 745, a phosphorous aluminum galliumarsenide deposition zone 750, a cool down exhaust with flowbalance restrictor zone 755, and an exitnitrogen isolation zone 760. As the wafer travels along the bottom portion of the reactor, which may generally include the wafer carrier track and the heating lamp assembly, the wafer may be subjected to one ormore temperature ramps 711 at the entrance and exit of the reactor to incrementally increase and decrease the temperature of the wafer, prior to entering and upon exiting thedeposition zones deposition zones deposition zones thermal region 712 to assist with the deposition processes. As shown, the temperature of the wafer traveling through thesixth configuration 700 may be increased as is passes theentrance isolation zone 715 and approaches the galliumarsenide deposition zone 730, may be maintained as it travels through thedeposition zones exhaust zone 755 and travels along the remainder of the wafer carrier track. -
FIG. 17 illustrates aseventh configuration 800. The CVD reactor may be configured to supplynitrogen 810 to the reactor to float the wafer(s) along the wafer carrier track of the reactor at the entrance and the exit. A hydrogen/arsine mixture 820 may also be used to float the wafer along the wafer carrier track of the CVD reactor between the exit and entrance. The stages of theseventh configuration 800 may be provided by one or more gas manifold assemblies of the reactor lid assembly. The stages along the wafer carrier track may include an entrancenitrogen isolation zone 815, apreheat exhaust zone 825, adeposition zone 830, a cool downexhaust zone 835, and an exitnitrogen isolation zone 840. In one embodiment, thedeposition zone 830 may include an oscillating showerhead assembly. As the wafer travels along the bottom portion of the reactor, which may generally include the wafer carrier track and the heating lamp assembly, the wafer may be subjected to one ormore temperature ramps deposition zone 830 to reduce thermal stress imparted on the wafer. The wafer may be heated to within a process temperature range prior to entering thedeposition zone 830 to facilitate the deposition process. In one embodiment, the wafer may be heated and/or cooled to within a first temperature range as it travels through the temperature ramps 811. In one embodiment, the wafer may be heated and/or cooled to within a second temperature range as it travels through the temperature ramps 813. The first temperature range may be greater than, less than, and/or equal to the second temperature range. As the wafer travels through thedeposition zone 830 the temperature of the wafer may be maintained within athermal region 812 to assist with the deposition processes. As shown, the temperature of the wafer traveling through theseventh configuration 800 may be increased as it passes theentrance isolation zone 815 and approaches thedeposition zone 830, may be maintained as it travels through thedeposition zone 830, and may be decreased as it nears the cool downexhaust zone 840 and travels along the remainder of the wafer carrier track. - In one embodiment, the CVD reactor may be configured to demonstrate high quality gallium arsenide and aluminum gallium arsenide double heterostructure deposition at 1 um/min deposition rate; demonstrate high quality aluminum arsenide epitaxial lateral overgrowth sacrificial layer; and define a wafer carrier track capable of providing 6-10 wafers per minute throughput.
- In one embodiment, the CVD reactor may be configured to provide a deposition rate of one 10 centimeter by 10 centimeter wafer per minute. In one embodiment the CVD reactor may be configured to provide a 300 nanometer gallium arsenide buffer layer. In one embodiment the CVD reactor may be configured to provide a 30 nanometer aluminum gallium arsenide passivation layer. In one embodiment the CVD reactor may be configured to provide a 1000 nanometer gallium arsenide active layer. In one embodiment the CVD reactor may be configured to provide a 30 nanometer aluminum gallium arsenide passivation layer. In one embodiment the CVD reactor may be configured to provide a dislocation density of less than 1E4 per centimeter squared; a photoluminescence efficiency of 99%; and a photoluminescence lifetime of 250 nanoseconds.
- In one embodiment the CVD reactor may be configured to provide an epitaxial lateral overgrowth layer having a 5 nm deposition +−0.5 nm; a etch selectivity greater than 1E6; zero pinholes; and an aluminum arsenide etch rate greater than 0.2 mm per hour.
- In one embodiment the CVD reactor may be configured to provide a center to edge temperature non-uniformity of no greater than 10° C. for temperatures above 300° C.; a V-III ratio of no more than 5; and a maximum temperature of 800° C.
- In one embodiment the CVD reactor may be configured to provide a deposition layers having a 300 nm gallium arsenide buffer layer; a 5 nm aluminum arsenide sacrificial layer; a 10 nm aluminum gallium arsenide window layer; a 700 nm gallium arsenide 2E17 Si active layer; a 300 nm aluminum gallium arsenide 1E19 C P+ layer; and a 300 nm gallium arsenide 1E19 C P+ layer.
- In one embodiment the CVD reactor may be configured to provide a deposition layers having a 300 nm gallium arsenide buffer layer; a 5 nm aluminum arsenide sacrificial layer; a 10 nm gallium indium phosphide window layer; a 700 nm gallium arsenide 2E17 Si active layer; a 100 nm gallium arsenide C P layer; a 300 nm gallium indium phosphide P window layer; a 20 nm gallium indium phosphide 1E20 P+ tunnel junction layer; a 20 nm gallium indium phosphide 1E20 N+ tunnel junction layer; a 30 nm aluminum gallium arsenide window; a 400 nm gallium indium phosphide N active layer; a 100 nm gallium indium phosphide P active layer; a 30 nm aluminum gallium arsenide P window; and a 300 nm gallium arsenide P+ contact layer.
- Embodiments of the invention generally relate to a levitating substrate carrier or support. In one embodiment, a substrate carrier for supporting and carrying at least one substrate or wafer passing through a reactor is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. In another embodiment, the substrate carrier includes a substrate carrier body containing an upper surface and a lower surface, and at least two indentation pockets disposed within the lower surface. In another embodiment, the substrate carrier includes a substrate carrier body containing an upper surface and a lower surface, an indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface. In another embodiment, the substrate carrier includes a substrate carrier body containing an upper surface and a lower surface, an indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface, wherein each indentation pocket has a rectangular geometry and four side walls which extend perpendicular or substantially perpendicular to the lower surface. In another embodiment, the substrate carrier includes a substrate carrier body containing an upper surface and a lower surface, and at least two indentation pockets disposed within the lower surface, wherein each indentation pocket has a rectangular geometry and four side walls which extend perpendicular or substantially perpendicular to the lower surface.
- In another embodiment, a substrate carrier for supporting and carrying at least one substrate passing through a reactor is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. The substrate carrier body may have a rectangular geometry, a square geometry, or another type of geometry. In one example, the substrate carrier body has two short sides and two long sides, wherein one of the two short sides is the front of the substrate carrier body and the other short side is the rear of the substrate carrier body. The substrate carrier body may contain or be made from graphite.
- In some examples, the upper surface contains at least one indentation area disposed therein. The indentation area within the upper surface is configured to hold a substrate thereon. In other examples, the upper surface may have at least two, three, four, eight, twelve, or more of the indentation areas. In another example, the upper surface has no indentation areas.
- In another embodiment, the lower surface may have at least two of the indentation pockets, which are configured to accept a gas cushion. In some examples, the lower surface has one, three, or more of the indentation pockets. The indentation pocket may have a rectangular geometry, a square geometry, or another type of geometry. Each of the indentation pockets usually has two short sides and two long sides. In one example, the short sides and the long sides are straight. The short sides and the long sides are perpendicular relative to the lower surface. In another example, at least one of the two short sides is tapered at a first angle, at least one of the two long sides is tapered at a second angle, and the first angle may be greater than or less than the second angle. In another example, at least one of the two short sides is straight and at least one of the two long sides is tapered. In another example, at least one of the two short sides is tapered and at least one of the two long sides is straight. In one embodiment, the indentation pocket has a rectangular geometry and the indentation pocket is configured to accept a gas cushion. The indentation pocket may have tapered side walls which taper away from the upper surface.
- In another embodiment, a method for levitating substrates disposed on an upper surface of a substrate carrier during a vapor deposition process is provided which includes exposing a lower surface of a substrate carrier to a gas stream, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber. In many examples, the movement of the substrate carrier and/or the velocity of the substrate carrier along the path may be controlled by adjusting the flow rate of the gas stream. The air cushion may be formed within at least one indentation pocket disposed within the lower surface. In some examples, the lower surface has at least two indentation pockets. The indentation pockets are configured to accept the gas cushion. An upper surface of the substrate carrier comprises at least one indentation area for supporting a substrate. The indentation pocket may have tapered side walls which taper away from the upper surface of the substrate carrier.
- In another embodiment, a method for levitating substrates disposed on a substrate carrier during a vapor deposition process is provided which includes exposing a lower surface of a substrate carrier to a gas stream, wherein at least one wafer is disposed on an upper surface of the substrate carrier and the lower surface contains at least one indentation pocket, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.
- In another embodiment, a method for levitating substrates disposed on a substrate carrier during a vapor deposition process is provided which includes exposing a lower surface of a substrate carrier to a gas stream, wherein the lower surface contains at least one indentation pocket, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.
- In another embodiment, a method for levitating substrates disposed on a substrate carrier during a vapor deposition process is provided which includes exposing a lower surface of a substrate carrier to a gas stream, wherein the lower surface contains at least two indentation pockets, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.
- Embodiments of the invention generally relate to a chemical vapor deposition reactor system and related methods of use. In one embodiment, a chemical vapor deposition system is provided which includes a lid assembly, such as a top plate, having a plurality of raised portions located along the longitudinal axis of the top plate. The system includes a track having a guide path, such as a channel, located along the longitudinal axis of the track, wherein the channel is adapted to receive the plurality of raised portions of the top plate, thereby forming a gap between the plurality of raised portions and a floor of the track, wherein the gap is configured to receive a substrate. The system includes a heating assembly, such as a heating element, operable to heat the substrate as the substrate moves along the channel of the track. In one embodiment, the track is operable to float the substrate along the channel of the track.
- In one embodiment, system includes a trough that supports the track. The gap may have a thickness between 0.5 and 5 millimeter or between 0.5 and 1 millimeter. The top plate is formed from molybdenum or quartz, the track is formed from quartz or silica. The top plate is operable to direct a gas to the gap and may further include a plurality of ports located along the longitudinal axis of the top plate and disposed between the plurality of raised portions, thereby defining paths between the plurality of raised portions. One or more of the plurality of ports is adapted to communicate and/or exhaust a gas to the gap between plurality of raised portions of the top plate and the floor of the track.
- Examples of the heating element include a heating lamp coupled to or with the track, a plurality of heating lamps disposed along the track, a heating lamp bank operable to move along the track as the substrate moves along the channel of the track, resistive heaters coupled to or with the track, an inductive heating source coupled to or with the substrate and/or the track. The heating element is operable to maintain a temperature differential across the substrate, wherein the temperature differential is less than 10 degrees Celsius. In one embodiment, the chemical vapor deposition system is an atmospheric pressure chemical vapor deposition system.
- In one embodiment, a chemical vapor deposition system is provided which includes an entrance isolator operable to prevent contaminants from entering the system at an entrance of the system; an exit isolator operable to prevent contaminants from entering the system at an exit of the system; and an intermediate isolator disposed between the entrance and exit isolators. The system may further include a first deposition zone disposed adjacent the entrance isolator and a second deposition zone disposed adjacent the exit isolator. The intermediate isolator is disposed between the deposition zones and is operable to prevent mixing of gases between the first deposition zone and the second deposition zone.
- In one embodiment, the entrance isolator is further operable to prevent back diffusion of gases injected into the first deposition zone, the intermediate isolator is further operable to prevent back diffusion of gases injected into the second deposition zone, and the exit isolator is further operable to prevent back diffusion of gases injected into the second deposition zone. An isolation zone formed by at least one of the isolators has a length between 1 to 2 meters. A gas, such as nitrogen, is injected into the entrance isolator at a first flow rate, such as about 30 liters per minute, to prevent back diffusion of gases from the first deposition zone. A gas, such as arsine, is injected into the intermediate isolator at a first flow rate, such as about 3 liters per minute, to prevent back mixing of gases between the first deposition zone and the second deposition zone. A gas, such as nitrogen, is injected into the exit isolator at a first flow rate, such as about 30 liters per minute, to prevent contaminants from entering the system at the exit of the system. In one embodiment, an exhaust is disposed adjacent each isolator and operable to exhaust gases injected by the isolators. An exhaust may be disposed adjacent each deposition zone and operable to exhaust gases injected into the deposition zones.
- In one embodiment, a chemical vapor deposition system is provided which includes a housing, a track surrounded by the housing, wherein the track defines a guide path, such as a channel, adapted to guide the substrate through the chemical vapor deposition system. The system includes a carrier for moving the substrate along the channel of the track, wherein the track is operable to levitate the carrier along the channel of the track. The housing is formed from molybdenum, quartz, or stainless steel, the track is formed from quartz, molybdenum, fused silica, ceramic, and the carrier is formed from graphite.
- In one embodiment, the track comprises a plurality of openings and/or a conduit disposed along the floor of the track each operable to supply a cushion of gas to the channel and the bottom surface of the carrier to lift or levitate the carrier and substantially center the carrier along the channel of the track. The conduit may have a v-shape and the carrier may have a notch (e.g. v-shape) disposed along its bottom surface. A gas is applied to the notch of the carrier to substantially lift the carrier from the floor of the track and to substantially center the carrier along the channel of the track. The track may be tilted, such as at an angle less than about ten, twenty, or between one and five degrees, to allow the substrate to move and float from a first end of the channel to a second end of the channel. The track and/or housing may include multiple segments.
- In one embodiment, the system may include a conveyor operable to automatically introduce substrates into the channel, a retriever operable to automatically retrieve substrates from the channel, and/or a heating element operable to heat the substrate. The heating element is coupled to or with the housing, the substrate, and/or the track. The carrier is operable to carry strips of the substrate along the channel of the track.
- In one embodiment, a track assembly for moving a substrate through a chemical vapor deposition system is provided which includes a top section having a floor, side supports, such as a pair of rails, disposed adjacent the floor, thereby defining a guide path, such as a channel, to guide the substrate along the floor. A bottom section is coupled to or with the top section to form one or more chambers therebetween. The top section may include a recessed bottom surface and the bottom section may include a recessed top surface to form the chamber. In one embodiment the top section and/or the bottom section is formed from molybdenum, quartz, silica, alumina, or ceramic.
- In one embodiment, the top section has a plurality of openings disposed through the floor to provide fluid communication between the chamber and the channel. A cushion of gas, such as nitrogen, is supplied from the chamber to the channel to substantially lift and carry the substrate from and along the floor of the top section. The floor may be tilted, such as at an angle less than about ten, twenty, or between one and five degrees, to allow the substrate to move and float from a first end of the channel to a second end of the channel.
- In one embodiment, the top section has a plurality of openings disposed through the pair of rails adjacent the floor. A gas is supplied through the plurality of openings to substantially center the substrate moving along the channel of the top section. The floor may also include a tapered profile and/or a conduit through which a gas is supplied each operable to substantially center the substrate moving along the channel of the top section. The conduit may have a v-shape and/or the substrate may have a notch (e.g. v-shaped) for receiving a gas cushion disposed along a bottom surface of the substrate operable to substantially center the substrate moving along the channel of the top section.
- In one embodiment, the track assembly may include a conveyor operable to automatically introduce substrates into the channel and/or a retriever operable to automatically retrieve substrates from the channel. An injection line may be coupled to or with the bottom section to supply a gas to the chamber through the floor to substantially float the substrate along the floor of the top section. The top section may further include recessed portions adjacent the rails operable to receive reactor lid assembly, such as a top plate. The track assembly may include a trough in which the top section and bottom section are seated. The trough is formed from quartz, molybdenum, or stainless steel.
- In one embodiment, a method for forming a multi-layered material during a chemical vapor deposition process is provided which includes forming a gallium arsenide buffer layer on a gallium arsenide substrate; forming an aluminum arsenide sacrificial layer on the buffer layer; and forming an aluminum gallium arsenide passivation layer on the sacrificial layer. The method may further include forming a gallium arsenide active layer (e.g. at about 1000 nanometers thick) on the passivation layer. The method may further include forming a phosphorous gallium arsenide layer on the active layer. The method may further include removing the sacrificial layer to separate the active layer from the substrate. The aluminum arsenide sacrificial layer may be exposed to an etching solution while the gallium arsenide active layer is separated from the substrate during an epitaxial lift off process. The method may further include forming additional multi-layered materials on the substrate during a subsequent chemical vapor deposition process. The buffer layer may be about 300 nanometers in thickness, the passivation layer may be about 30 nanometers in thickness, and/or the sacrificial layer may be about 5 nanometers in thickness.
- In one embodiment, a method of forming multiple epitaxial layers on a substrate using a chemical vapor deposition system is provided which includes introducing the substrate into a guide path, such as a channel, at an entrance of the system, while preventing contaminants from entering the system at the entrance; depositing a first epitaxial layer on the substrate, while the substrate moves along the channel of the system; depositing a second epitaxial layer on the substrate, while the substrate move along the channel of the system; preventing mixing of gases between the first deposition step and the second deposition step; and retrieving the substrate from the channel at an exit of the system, while preventing contaminants from entering the system at the exit. The method may further include heating the substrate prior to depositing the first epitaxial layer; maintaining the temperature of the substrate as the first and second epitaxial layers are deposited on the substrate; and/or cooling the substrate after depositing the second epitaxial layer. The substrate may substantially float along the channel of the system. The first epitaxial layer may include aluminum arsenide and/or the second epitaxial layer may include gallium arsenide. The method may further include depositing a phosphorous gallium arsenide layer on the substrate and/or heating the substrate to a temperature within a range from about 300 degree Celsius to about 800 degrees Celsius during the depositing of the epitaxial layers. A center temperature to an edge temperature of the substrate may be within 10 degrees Celsius of each other.
- In one embodiment, a chemical vapor deposition reactor is provided which includes a lid assembly having a body, and a track assembly having a body and a guide path located along the longitudinal axis of the body. The body of the lid assembly and the body of the track assembly are coupled together to form a gap therebetween that is configured to receive a substrate. The reactor may further include a heating assembly containing a plurality of heating lamps disposed along the track assembly and operable to heat the substrate as the substrate moves along the guide path. The reactor may further include a track assembly support, wherein the track assembly is disposed in the track assembly support. The body of the track assembly may contain a gas cavity within and extending along the longitudinal axis of the body and a plurality of ports extending from the gas cavity to an upper surface of the guide path and configured to supply a gas cushion along the guide path. The body of the track assembly may comprise quartz. The body of the lid assembly may include a plurality of ports configured to provide fluid communication to the guide path. The heating assembly may be operable to maintain a temperature differential across the substrate, wherein the temperature differential is less than 10 degrees Celsius. In one embodiment, the chemical vapor deposition reactor is an atmospheric pressure chemical vapor deposition reactor.
- In one embodiment, a chemical vapor deposition system is provided which includes a entrance isolator operable to prevent contaminants from entering the system at an entrance of the system; an exit isolator operable to prevent contaminants from entering the system at an exit of the system; and a intermediate isolator disposed between the entrance and exit isolators. The system may further include a first deposition zone disposed adjacent the entrance isolator and a second deposition zone disposed adjacent the exit isolator. The intermediate isolator is disposed between the deposition zones and is operable to prevent mixing of gases between the first deposition zone and the second deposition zone. A gas is injected into the entrance isolator at a first flow rate to prevent back diffusion of gases from the first deposition zone, a gas is injected into the intermediate isolator at a first flow rate to prevent back mixing of gases between the first deposition zone and the second deposition zone, and/or a gas is injected into the exit isolator at a first flow rate to prevent contaminants from entering the system at the exit of the system. An exhaust may be disposed adjacent each isolator and operable to exhaust gases injected by the isolators and/or disposed adjacent each deposition zone and operable to exhaust gases injected into the deposition zones.
- In one embodiment, a chemical vapor deposition system is provided which includes a housing, a track surrounded by the housing, wherein the track contains a guide path adapted to guide a substrate through the chemical vapor deposition system, and a substrate carrier for moving the substrate along the guide path, wherein the track is operable to levitate the substrate carrier along the guide path. The track may include a plurality of openings operable to supply a gas cushion to the guide path. The gas cushion is applied to a bottom surface of the substrate carrier to lift the substrate carrier from a floor of the track. The track may include a conduit disposed along the guide path and operable to substantially center the substrate carrier along the guide path of the track. A gas cushion may be supplied through the conduit to a bottom surface of the substrate carrier to substantially lift the substrate carrier from a floor of the track. The track may be tilted to allow the substrate to move from a first end of the guide path to a second end of the guide path. The system may include a heating assembly containing a plurality of heating lamps disposed along the track and operable to heat the substrate as the substrate moves along the guide path.
- While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (32)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/475,131 US20090325367A1 (en) | 2008-05-30 | 2009-05-29 | Methods and apparatus for a chemical vapor deposition reactor |
US12/725,296 US8852696B2 (en) | 2008-05-30 | 2010-03-16 | Method for vapor deposition |
US12/725,332 US20100212591A1 (en) | 2008-05-30 | 2010-03-16 | Reactor lid assembly for vapor deposition |
US12/725,308 US9169554B2 (en) | 2008-05-30 | 2010-03-16 | Wafer carrier track |
US12/725,314 US20100209082A1 (en) | 2008-05-30 | 2010-03-16 | Heating lamp system |
US12/725,318 US8859042B2 (en) | 2008-05-30 | 2010-03-16 | Methods for heating with lamps |
US12/725,277 US20100206229A1 (en) | 2008-05-30 | 2010-03-16 | Vapor deposition reactor system |
US13/221,780 US20110308463A1 (en) | 2008-05-30 | 2011-08-30 | Chemical vapor deposition reactor with isolated sequential processing zones |
US13/444,645 US20130098289A1 (en) | 2008-05-30 | 2012-04-11 | Methods and apparatus for a chemical vapor deposition reactor |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5778808P | 2008-05-30 | 2008-05-30 | |
US10428408P | 2008-10-10 | 2008-10-10 | |
US12259108P | 2008-12-15 | 2008-12-15 | |
US12/475,131 US20090325367A1 (en) | 2008-05-30 | 2009-05-29 | Methods and apparatus for a chemical vapor deposition reactor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/475,169 Continuation-In-Part US8602707B2 (en) | 2008-05-30 | 2009-05-29 | Methods and apparatus for a chemical vapor deposition reactor |
Related Child Applications (8)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/475,169 Continuation-In-Part US8602707B2 (en) | 2008-05-30 | 2009-05-29 | Methods and apparatus for a chemical vapor deposition reactor |
US12/725,332 Continuation-In-Part US20100212591A1 (en) | 2008-05-30 | 2010-03-16 | Reactor lid assembly for vapor deposition |
US12/725,314 Continuation-In-Part US20100209082A1 (en) | 2008-05-30 | 2010-03-16 | Heating lamp system |
US12/725,308 Continuation-In-Part US9169554B2 (en) | 2008-05-30 | 2010-03-16 | Wafer carrier track |
US12/725,318 Continuation-In-Part US8859042B2 (en) | 2008-05-30 | 2010-03-16 | Methods for heating with lamps |
US12/725,277 Continuation-In-Part US20100206229A1 (en) | 2008-05-30 | 2010-03-16 | Vapor deposition reactor system |
US12/725,296 Continuation-In-Part US8852696B2 (en) | 2008-05-30 | 2010-03-16 | Method for vapor deposition |
US13/444,645 Division US20130098289A1 (en) | 2008-05-30 | 2012-04-11 | Methods and apparatus for a chemical vapor deposition reactor |
Publications (1)
Publication Number | Publication Date |
---|---|
US20090325367A1 true US20090325367A1 (en) | 2009-12-31 |
Family
ID=41434666
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/475,131 Abandoned US20090325367A1 (en) | 2008-05-30 | 2009-05-29 | Methods and apparatus for a chemical vapor deposition reactor |
US12/475,169 Active 2032-07-10 US8602707B2 (en) | 2008-05-30 | 2009-05-29 | Methods and apparatus for a chemical vapor deposition reactor |
US13/444,645 Abandoned US20130098289A1 (en) | 2008-05-30 | 2012-04-11 | Methods and apparatus for a chemical vapor deposition reactor |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/475,169 Active 2032-07-10 US8602707B2 (en) | 2008-05-30 | 2009-05-29 | Methods and apparatus for a chemical vapor deposition reactor |
US13/444,645 Abandoned US20130098289A1 (en) | 2008-05-30 | 2012-04-11 | Methods and apparatus for a chemical vapor deposition reactor |
Country Status (5)
Country | Link |
---|---|
US (3) | US20090325367A1 (en) |
EP (1) | EP2281300A4 (en) |
CN (1) | CN102084460A (en) |
TW (1) | TWI476295B (en) |
WO (1) | WO2009155119A2 (en) |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100001316A1 (en) * | 2008-05-30 | 2010-01-07 | Alta Devices, Inc. | Epitaxial lift off stack having a non-uniform handle and methods thereof |
US20100092668A1 (en) * | 2008-10-10 | 2010-04-15 | Alta Devices, Inc. | Concentric Showerhead For Vapor Deposition |
US20100120233A1 (en) * | 2008-10-10 | 2010-05-13 | Alta Devices, Inc. | Continuous Feed Chemical Vapor Deposition |
US20100116784A1 (en) * | 2008-10-10 | 2010-05-13 | Alta Devices, Inc. | Mesa etch method and composition for epitaxial lift off |
US20100147370A1 (en) * | 2008-12-08 | 2010-06-17 | Alta Devices, Inc. | Multiple stack deposition for epitaxial lift off |
US20100151689A1 (en) * | 2008-12-17 | 2010-06-17 | Alta Devices, Inc. | Tape-based epitaxial lift off apparatuses and methods |
US20100206229A1 (en) * | 2008-05-30 | 2010-08-19 | Alta Devices, Inc. | Vapor deposition reactor system |
US20100209082A1 (en) * | 2008-05-30 | 2010-08-19 | Alta Devices, Inc. | Heating lamp system |
US20100209620A1 (en) * | 2008-05-30 | 2010-08-19 | Alta Devices, Inc. | Method for vapor deposition |
US20100209626A1 (en) * | 2008-05-30 | 2010-08-19 | Alta Devices, Inc. | Methods for heating with lamps |
US20100206235A1 (en) * | 2008-05-30 | 2010-08-19 | Alta Devices, Inc. | Wafer carrier track |
US20100212591A1 (en) * | 2008-05-30 | 2010-08-26 | Alta Devices, Inc. | Reactor lid assembly for vapor deposition |
US20100229793A1 (en) * | 2009-03-16 | 2010-09-16 | Alta Devices, Inc. | Showerhead for vapor deposition |
US20110083601A1 (en) * | 2009-10-14 | 2011-04-14 | Alta Devices, Inc. | High growth rate deposition for group iii/v materials |
US20120237695A1 (en) * | 2009-12-23 | 2012-09-20 | 2-Pye Solar, LLC | Method and apparatus for depositing a thin film |
US20120291707A1 (en) * | 2009-11-19 | 2012-11-22 | Levitech B.V. | Floating wafer track with lateral stabilization mechanism |
US8362592B2 (en) | 2009-02-27 | 2013-01-29 | Alta Devices Inc. | Tiled substrates for deposition and epitaxial lift off processes |
US20130047922A1 (en) * | 2011-08-31 | 2013-02-28 | Alta Devices, Inc. | Thermal bridge for chemical vapor deposition reactors |
US8602707B2 (en) | 2008-05-30 | 2013-12-10 | Alta Devices, Inc. | Methods and apparatus for a chemical vapor deposition reactor |
CN103443325A (en) * | 2011-03-01 | 2013-12-11 | 应用材料公司 | Apparatus and process for atomic layer deposition |
US9105286B2 (en) | 2013-07-30 | 2015-08-11 | HGST Netherlands B.V. | Method using epitaxial transfer to integrate HAMR photonic integrated circuit (PIC) into recording head wafer |
US9127364B2 (en) | 2009-10-28 | 2015-09-08 | Alta Devices, Inc. | Reactor clean |
US9175393B1 (en) | 2011-08-31 | 2015-11-03 | Alta Devices, Inc. | Tiled showerhead for a semiconductor chemical vapor deposition reactor |
US9212422B2 (en) | 2011-08-31 | 2015-12-15 | Alta Devices, Inc. | CVD reactor with gas flow virtual walls |
US9267205B1 (en) | 2012-05-30 | 2016-02-23 | Alta Devices, Inc. | Fastener system for supporting a liner plate in a gas showerhead reactor |
US20170062258A1 (en) * | 2012-04-19 | 2017-03-02 | Intevac, Inc. | Wafer plate and mask arrangement for substrate fabrication |
US9938617B2 (en) | 2010-10-22 | 2018-04-10 | Agc Glass Europe | Modular coater separation |
US10066297B2 (en) | 2011-08-31 | 2018-09-04 | Alta Devices, Inc. | Tiled showerhead for a semiconductor chemical vapor deposition reactor |
US10932323B2 (en) | 2015-08-03 | 2021-02-23 | Alta Devices, Inc. | Reflector and susceptor assembly for chemical vapor deposition reactor |
US11393683B2 (en) | 2009-10-14 | 2022-07-19 | Utica Leaseco, Llc | Methods for high growth rate deposition for forming different cells on a wafer |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6243898B2 (en) * | 2012-04-19 | 2017-12-06 | インテヴァック インコーポレイテッド | Double mask device for solar cell manufacturing |
US10062600B2 (en) | 2012-04-26 | 2018-08-28 | Intevac, Inc. | System and method for bi-facial processing of substrates |
TWI518832B (en) | 2012-04-26 | 2016-01-21 | 因特瓦克公司 | System architecture for vacuum processing |
TWI506163B (en) * | 2012-07-13 | 2015-11-01 | Epistar Corp | Reactive apparatus for vapor deposition and carrier thereof |
KR101420333B1 (en) * | 2012-11-19 | 2014-07-16 | 삼성디스플레이 주식회사 | Vapor deposition apparatus, method for forming thin film using the same and method for manufacturing organic light emitting display apparatus |
TWI486477B (en) * | 2012-11-23 | 2015-06-01 | Chemical vapor deposition equipment and its vehicles | |
NL2010471C2 (en) * | 2013-03-18 | 2014-09-24 | Levitech B V | Substrate processing apparatus. |
TWI502096B (en) * | 2013-06-17 | 2015-10-01 | Ind Tech Res Inst | Reaction device and manufacture method for chemical vapor deposition |
WO2016022728A1 (en) | 2014-08-05 | 2016-02-11 | Intevac, Inc. | Implant masking and alignment |
SG10201906641WA (en) * | 2015-10-01 | 2019-09-27 | Intevac Inc | Wafer plate and mask arrangement for substrate fabrication |
EP3408871A1 (en) | 2016-01-29 | 2018-12-05 | Alta Devices, Inc. | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
WO2019067177A1 (en) | 2017-09-27 | 2019-04-04 | Alta Devices, Inc. | High growth rate deposition for group iii/v materials |
JP7437187B2 (en) * | 2020-02-26 | 2024-02-22 | Jswアクティナシステム株式会社 | Levitation conveyance device and laser processing device |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US808085A (en) * | 1904-03-10 | 1905-12-26 | Gustave K Hartung | Electric glow-lamp. |
US4316430A (en) * | 1980-09-30 | 1982-02-23 | Rca Corporation | Vapor phase deposition apparatus |
US4649261A (en) * | 1984-02-28 | 1987-03-10 | Tamarack Scientific Co., Inc. | Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US4834020A (en) * | 1987-12-04 | 1989-05-30 | Watkins-Johnson Company | Atmospheric pressure chemical vapor deposition apparatus |
US4941429A (en) * | 1988-12-20 | 1990-07-17 | Texas Instruments Incorporated | Semiconductor wafer carrier guide tracks |
US4975561A (en) * | 1987-06-18 | 1990-12-04 | Epsilon Technology Inc. | Heating system for substrates |
US5626677A (en) * | 1995-04-27 | 1997-05-06 | Nec Corporation | Atmospheric pressure CVD apparatus |
US5776254A (en) * | 1994-12-28 | 1998-07-07 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming thin film by chemical vapor deposition |
US6290522B1 (en) * | 1998-02-19 | 2001-09-18 | Leviton Manufacturing Co., Inc. | Fluorescent lampholder |
US6540869B2 (en) * | 2000-06-02 | 2003-04-01 | Tokyo Electron Limited | Semiconductor processing system |
US20040244686A1 (en) * | 2002-03-29 | 2004-12-09 | Cheon-Soo Cho | Surface treatment system, surface treatment method and product produced by surface treatment method |
US20050109275A1 (en) * | 2003-11-21 | 2005-05-26 | Wood Eric R. | Reactor chamber |
US20060037702A1 (en) * | 2004-08-20 | 2006-02-23 | Tokyo Electron Limited | Plasma processing apparatus |
US20060249077A1 (en) * | 2005-05-09 | 2006-11-09 | Kim Daeyoun | Multiple inlet atomic layer deposition reactor |
US20070137570A1 (en) * | 2004-01-30 | 2007-06-21 | Sharp Kabushiki Kaisha | Semiconductor manufacturing apparatus and semiconductor manufacturing method using the same |
US20090324379A1 (en) * | 2008-05-30 | 2009-12-31 | Alta Devices, Inc. | Methods and apparatus for a chemical vapor deposition reactor |
US20100092668A1 (en) * | 2008-10-10 | 2010-04-15 | Alta Devices, Inc. | Concentric Showerhead For Vapor Deposition |
US8008174B2 (en) * | 2008-10-10 | 2011-08-30 | Alta Devices, Inc. | Continuous feed chemical vapor deposition |
Family Cites Families (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2626677A (en) | 1950-02-28 | 1953-01-27 | Houdaille Hershey Corp | Air cleaner, intake silencer, and carburetor housing assembly |
US3078939A (en) * | 1959-12-16 | 1963-02-26 | Carwil Entpr Inc | Earth-skimming air vehicle |
US3081886A (en) * | 1962-01-12 | 1963-03-19 | Bell Aerospace Corp | Cargo conveyance means |
GB1043351A (en) * | 1962-03-27 | 1966-09-21 | Hovercraft Dev Ltd | Improvements relating to means for bounding a space for receiving pressurised gas |
US3332759A (en) * | 1963-11-29 | 1967-07-25 | Permaglass | Method of and apparatus for manufacturing glass sheets on a gas support bed |
CH421819A (en) * | 1964-08-18 | 1966-09-30 | Spencer Melksham Limited | Infrastructure element for an object transport installation by pneumatic floating |
GB1161596A (en) * | 1965-10-22 | 1969-08-13 | Pilkington Brothers Ltd | Improvements in or relating to Methods of and Apparatus for Conveying Glass Sheets |
US3734231A (en) * | 1970-03-16 | 1973-05-22 | Vries R De | Transport means or vehicle, or a fluid bed |
US3783965A (en) * | 1972-05-25 | 1974-01-08 | Textron Inc | Air cushion vehicle seal system |
US3993533A (en) * | 1975-04-09 | 1976-11-23 | Carnegie-Mellon University | Method for making semiconductors for solar cells |
US3976330A (en) * | 1975-10-01 | 1976-08-24 | International Business Machines Corporation | Transport system for semiconductor wafer multiprocessing station system |
US4081201A (en) * | 1976-12-27 | 1978-03-28 | International Business Machines Corporation | Wafer air film transportation system |
US4278366A (en) * | 1977-03-18 | 1981-07-14 | Gca Corporation | Automatic wafer processing system and method |
WO1981002948A1 (en) * | 1980-04-10 | 1981-10-15 | Massachusetts Inst Technology | Methods of producing sheets of crystalline material and devices made therefrom |
US4445965A (en) * | 1980-12-01 | 1984-05-01 | Carnegie-Mellon University | Method for making thin film cadmium telluride and related semiconductors for solar cells |
US4600471A (en) * | 1981-08-26 | 1986-07-15 | Integrated Automation, Limited | Method and apparatus for transport and processing of substrate with developing agent |
NL8103979A (en) * | 1981-08-26 | 1983-03-16 | Bok Edward | METHOD AND APPARATUS FOR APPLYING A FILM LIQUID MEDIUM TO A SUBSTRATE |
NL8203318A (en) * | 1982-08-24 | 1984-03-16 | Integrated Automation | DEVICE FOR PROCESSING SUBSTRATES. |
JPS6169116A (en) * | 1984-09-13 | 1986-04-09 | Toshiba Ceramics Co Ltd | Susceptor for continuous cvd coating on silicon wafer |
JPH0697676B2 (en) * | 1985-11-26 | 1994-11-30 | 忠弘 大見 | Wafer susceptor device |
US4846931A (en) * | 1988-03-29 | 1989-07-11 | Bell Communications Research, Inc. | Method for lifting-off epitaxial films |
US4883561A (en) * | 1988-03-29 | 1989-11-28 | Bell Communications Research, Inc. | Lift-off and subsequent bonding of epitaxial films |
US5074736A (en) * | 1988-12-20 | 1991-12-24 | Texas Instruments Incorporated | Semiconductor wafer carrier design |
EP0378815A3 (en) * | 1988-12-20 | 1991-07-31 | Texas Instruments Incorporated | Continuous chemical vapour deposition system |
US5073230A (en) * | 1990-04-17 | 1991-12-17 | Arizona Board Of Regents Acting On Behalf Of Arizona State University | Means and methods of lifting and relocating an epitaxial device layer |
US5122852A (en) * | 1990-04-23 | 1992-06-16 | Bell Communications Research, Inc. | Grafted-crystal-film integrated optics and optoelectronic devices |
US5201996A (en) * | 1990-04-30 | 1993-04-13 | Bell Communications Research, Inc. | Patterning method for epitaxial lift-off processing |
US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
US5528397A (en) * | 1991-12-03 | 1996-06-18 | Kopin Corporation | Single crystal silicon transistors for display panels |
US5258325A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US5256562A (en) * | 1990-12-31 | 1993-10-26 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US5221637A (en) * | 1991-05-31 | 1993-06-22 | Interuniversitair Micro Elektronica Centrum Vzw | Mesa release and deposition (MRD) method for stress relief in heteroepitaxially grown GaAs on Si |
US5277749A (en) * | 1991-10-17 | 1994-01-11 | International Business Machines Corporation | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps |
US5827751A (en) * | 1991-12-06 | 1998-10-27 | Picogiga Societe Anonyme | Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically |
US5465009A (en) * | 1992-04-08 | 1995-11-07 | Georgia Tech Research Corporation | Processes and apparatus for lift-off and bonding of materials and devices |
US5401983A (en) * | 1992-04-08 | 1995-03-28 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices |
US5286335A (en) * | 1992-04-08 | 1994-02-15 | Georgia Tech Research Corporation | Processes for lift-off and deposition of thin film materials |
FR2690279B1 (en) | 1992-04-15 | 1997-10-03 | Picogiga Sa | MULTISPECTRAL PHOTOVOLTAUIC COMPONENT. |
FR2690278A1 (en) * | 1992-04-15 | 1993-10-22 | Picogiga Sa | Multispectral photovoltaic component with cell stack, and production method. |
JP3218414B2 (en) | 1992-07-15 | 2001-10-15 | キヤノン株式会社 | Micro tip, method of manufacturing the same, probe unit and information processing apparatus using the micro tip |
US5276345A (en) * | 1992-10-30 | 1994-01-04 | California Institute Of Technology | Composite GaAs-on-quartz substrate for integration of millimeter-wave passive and active device circuitry |
US5344517A (en) * | 1993-04-22 | 1994-09-06 | Bandgap Technology Corporation | Method for lift-off of epitaxial layers and applications thereof |
US5528719A (en) * | 1993-10-26 | 1996-06-18 | Sumitomo Metal Mining Company Limited | Optical fiber guide structure and method of fabricating same |
GB9401770D0 (en) * | 1994-01-31 | 1994-03-23 | Philips Electronics Uk Ltd | Manufacture of electronic devices comprising thin-film circuits |
JPH07245597A (en) * | 1994-03-02 | 1995-09-19 | Pioneer Electron Corp | Spread spectrum communication method and transmitter-receiver |
US5641381A (en) * | 1995-03-27 | 1997-06-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Preferentially etched epitaxial liftoff of InP material |
US5728224A (en) * | 1995-09-13 | 1998-03-17 | Tetra Laval Holdings & Finance S.A. | Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate |
DE19640594B4 (en) * | 1996-10-01 | 2016-08-04 | Osram Gmbh | module |
US6291313B1 (en) * | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6162705A (en) * | 1997-05-12 | 2000-12-19 | Silicon Genesis Corporation | Controlled cleavage process and resulting device using beta annealing |
US6033974A (en) * | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US6548382B1 (en) * | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
JPH1159901A (en) * | 1997-08-11 | 1999-03-02 | Murata Mach Ltd | Carrier moving device |
KR19990043658A (en) * | 1997-11-29 | 1999-06-15 | 윤종용 | Thin Film Formation Method of Semiconductor Device Using Chemical Vapor Deposition Method |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
DE19803013B4 (en) * | 1998-01-27 | 2005-02-03 | Robert Bosch Gmbh | A method for detaching an epitaxial layer or a layer system and subsequent application to an alternative support |
JP4221071B2 (en) * | 1998-01-30 | 2009-02-12 | キヤノンアネルバ株式会社 | Chemical vapor deposition equipment |
US6346459B1 (en) * | 1999-02-05 | 2002-02-12 | Silicon Wafer Technologies, Inc. | Process for lift off and transfer of semiconductor devices onto an alien substrate |
US6504524B1 (en) * | 2000-03-08 | 2003-01-07 | E Ink Corporation | Addressing methods for displays having zero time-average field |
US20010047756A1 (en) * | 1999-05-17 | 2001-12-06 | Bartholomew Lawrence Duane | Gas distribution system |
US6387829B1 (en) * | 1999-06-18 | 2002-05-14 | Silicon Wafer Technologies, Inc. | Separation process for silicon-on-insulator wafer fabrication |
FR2795865B1 (en) * | 1999-06-30 | 2001-08-17 | Commissariat Energie Atomique | METHOD FOR MAKING A THIN FILM USING PRESSURIZATION |
JP2003506883A (en) * | 1999-08-10 | 2003-02-18 | シリコン ジェネシス コーポレイション | Cleavage process for manufacturing multi-layer substrates with low implant dose |
US6221740B1 (en) * | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US6263941B1 (en) * | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
GB2353269A (en) * | 1999-08-20 | 2001-02-21 | Markem Tech Ltd | Method and apparatus for conveying lamina objects |
US6214733B1 (en) * | 1999-11-17 | 2001-04-10 | Elo Technologies, Inc. | Process for lift off and handling of thin film materials |
US6352909B1 (en) * | 2000-01-06 | 2002-03-05 | Silicon Wafer Technologies, Inc. | Process for lift-off of a layer from a substrate |
JP2001274528A (en) | 2000-01-21 | 2001-10-05 | Fujitsu Ltd | Inter-substrate transfer method for thin film device |
US6287891B1 (en) * | 2000-04-05 | 2001-09-11 | Hrl Laboratories, Llc | Method for transferring semiconductor device layers to different substrates |
NL1016431C2 (en) | 2000-10-18 | 2002-04-22 | Univ Nijmegen | Method for separating a film and a substrate. |
EP1215145A1 (en) * | 2000-12-11 | 2002-06-19 | Abb Research Ltd. | Transport device with air cushion and method of operating such a transport device |
US6634882B2 (en) * | 2000-12-22 | 2003-10-21 | Asm America, Inc. | Susceptor pocket profile to improve process performance |
US7045878B2 (en) * | 2001-05-18 | 2006-05-16 | Reveo, Inc. | Selectively bonded thin film layer and substrate layer for processing of useful devices |
US7198671B2 (en) * | 2001-07-11 | 2007-04-03 | Matsushita Electric Industrial Co., Ltd. | Layered substrates for epitaxial processing, and device |
US7163826B2 (en) * | 2001-09-12 | 2007-01-16 | Reveo, Inc | Method of fabricating multi layer devices on buried oxide layer substrates |
US6953735B2 (en) * | 2001-12-28 | 2005-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device by transferring a layer to a support with curvature |
US7890771B2 (en) | 2002-04-17 | 2011-02-15 | Microsoft Corporation | Saving and retrieving data based on public key encryption |
JP2004047691A (en) * | 2002-07-11 | 2004-02-12 | Seiko Epson Corp | Method for manufacturing semiconductor device, electrooptic device and electronic apparatus |
JP2004055595A (en) * | 2002-07-16 | 2004-02-19 | Sharp Corp | Vapor deposition device |
TWI327128B (en) * | 2003-07-08 | 2010-07-11 | Daifuku Kk | Plate-shaped work piece transporting apparatus |
US20050011459A1 (en) * | 2003-07-15 | 2005-01-20 | Heng Liu | Chemical vapor deposition reactor |
US7202141B2 (en) * | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
AU2005262191A1 (en) * | 2004-07-09 | 2006-01-19 | Oc Oerllikon Balzers Ag | Gas bearing substrate-loading mechanism process |
US7229901B2 (en) * | 2004-12-16 | 2007-06-12 | Wisconsin Alumni Research Foundation | Fabrication of strained heterojunction structures |
JP4869612B2 (en) * | 2005-03-25 | 2012-02-08 | 東京エレクトロン株式会社 | Substrate transport system and substrate transport method |
WO2006131316A1 (en) | 2005-06-08 | 2006-12-14 | Firecomms Limited | Surface emitting optical devices |
KR101234442B1 (en) * | 2005-06-20 | 2013-02-18 | 엘지디스플레이 주식회사 | Support platforms of non-contact transfer apparatus |
US7153761B1 (en) | 2005-10-03 | 2006-12-26 | Los Alamos National Security, Llc | Method of transferring a thin crystalline semiconductor layer |
US7638410B2 (en) | 2005-10-03 | 2009-12-29 | Los Alamos National Security, Llc | Method of transferring strained semiconductor structure |
JP4709662B2 (en) | 2006-02-28 | 2011-06-22 | 三菱重工業株式会社 | Method for forming transparent electrode film and method for manufacturing solar cell |
DE102006018514A1 (en) * | 2006-04-21 | 2007-10-25 | Aixtron Ag | Apparatus and method for controlling the surface temperature of a substrate in a process chamber |
US8003492B2 (en) * | 2008-05-30 | 2011-08-23 | Alta Devices, Inc. | Epitaxial lift off stack having a unidirectionally shrunk handle and methods thereof |
-
2009
- 2009-05-29 US US12/475,131 patent/US20090325367A1/en not_active Abandoned
- 2009-05-29 US US12/475,169 patent/US8602707B2/en active Active
- 2009-05-29 CN CN200980126036.1A patent/CN102084460A/en active Pending
- 2009-05-29 WO PCT/US2009/045709 patent/WO2009155119A2/en active Application Filing
- 2009-05-29 EP EP09767430.3A patent/EP2281300A4/en not_active Withdrawn
- 2009-06-01 TW TW098118062A patent/TWI476295B/en active
-
2012
- 2012-04-11 US US13/444,645 patent/US20130098289A1/en not_active Abandoned
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US808085A (en) * | 1904-03-10 | 1905-12-26 | Gustave K Hartung | Electric glow-lamp. |
US4316430A (en) * | 1980-09-30 | 1982-02-23 | Rca Corporation | Vapor phase deposition apparatus |
US4649261A (en) * | 1984-02-28 | 1987-03-10 | Tamarack Scientific Co., Inc. | Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US4975561A (en) * | 1987-06-18 | 1990-12-04 | Epsilon Technology Inc. | Heating system for substrates |
US4834020A (en) * | 1987-12-04 | 1989-05-30 | Watkins-Johnson Company | Atmospheric pressure chemical vapor deposition apparatus |
US4941429A (en) * | 1988-12-20 | 1990-07-17 | Texas Instruments Incorporated | Semiconductor wafer carrier guide tracks |
US5776254A (en) * | 1994-12-28 | 1998-07-07 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming thin film by chemical vapor deposition |
US5626677A (en) * | 1995-04-27 | 1997-05-06 | Nec Corporation | Atmospheric pressure CVD apparatus |
US6290522B1 (en) * | 1998-02-19 | 2001-09-18 | Leviton Manufacturing Co., Inc. | Fluorescent lampholder |
US6540869B2 (en) * | 2000-06-02 | 2003-04-01 | Tokyo Electron Limited | Semiconductor processing system |
US20040244686A1 (en) * | 2002-03-29 | 2004-12-09 | Cheon-Soo Cho | Surface treatment system, surface treatment method and product produced by surface treatment method |
US20050109275A1 (en) * | 2003-11-21 | 2005-05-26 | Wood Eric R. | Reactor chamber |
US20070137570A1 (en) * | 2004-01-30 | 2007-06-21 | Sharp Kabushiki Kaisha | Semiconductor manufacturing apparatus and semiconductor manufacturing method using the same |
US20060037702A1 (en) * | 2004-08-20 | 2006-02-23 | Tokyo Electron Limited | Plasma processing apparatus |
US20060249077A1 (en) * | 2005-05-09 | 2006-11-09 | Kim Daeyoun | Multiple inlet atomic layer deposition reactor |
US20090324379A1 (en) * | 2008-05-30 | 2009-12-31 | Alta Devices, Inc. | Methods and apparatus for a chemical vapor deposition reactor |
US20100092668A1 (en) * | 2008-10-10 | 2010-04-15 | Alta Devices, Inc. | Concentric Showerhead For Vapor Deposition |
US8008174B2 (en) * | 2008-10-10 | 2011-08-30 | Alta Devices, Inc. | Continuous feed chemical vapor deposition |
Cited By (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100212591A1 (en) * | 2008-05-30 | 2010-08-26 | Alta Devices, Inc. | Reactor lid assembly for vapor deposition |
US8602707B2 (en) | 2008-05-30 | 2013-12-10 | Alta Devices, Inc. | Methods and apparatus for a chemical vapor deposition reactor |
US9070764B2 (en) | 2008-05-30 | 2015-06-30 | Alta Devices, Inc. | Epitaxial lift off stack having a pre-curved handle and methods thereof |
US20100001316A1 (en) * | 2008-05-30 | 2010-01-07 | Alta Devices, Inc. | Epitaxial lift off stack having a non-uniform handle and methods thereof |
US8367518B2 (en) | 2008-05-30 | 2013-02-05 | Alta Devices, Inc. | Epitaxial lift off stack having a multi-layered handle and methods thereof |
US8716107B2 (en) | 2008-05-30 | 2014-05-06 | Alta Devices, Inc. | Epitaxial lift off stack having a non-uniform handle and methods thereof |
US8859042B2 (en) | 2008-05-30 | 2014-10-14 | Alta Devices, Inc. | Methods for heating with lamps |
US20100206229A1 (en) * | 2008-05-30 | 2010-08-19 | Alta Devices, Inc. | Vapor deposition reactor system |
US20100209082A1 (en) * | 2008-05-30 | 2010-08-19 | Alta Devices, Inc. | Heating lamp system |
US20100209620A1 (en) * | 2008-05-30 | 2010-08-19 | Alta Devices, Inc. | Method for vapor deposition |
US20100209626A1 (en) * | 2008-05-30 | 2010-08-19 | Alta Devices, Inc. | Methods for heating with lamps |
US20100206235A1 (en) * | 2008-05-30 | 2010-08-19 | Alta Devices, Inc. | Wafer carrier track |
US8314011B2 (en) | 2008-05-30 | 2012-11-20 | Alta Devices, Inc. | Epitaxial lift off stack having a non-uniform handle and methods thereof |
US20100001374A1 (en) * | 2008-05-30 | 2010-01-07 | Alta Devices, Inc. | Epitaxial lift off stack having a multi-layered handle and methods thereof |
US8852696B2 (en) | 2008-05-30 | 2014-10-07 | Alta Devices, Inc. | Method for vapor deposition |
US8003492B2 (en) | 2008-05-30 | 2011-08-23 | Alta Devices, Inc. | Epitaxial lift off stack having a unidirectionally shrunk handle and methods thereof |
US8309432B2 (en) | 2008-05-30 | 2012-11-13 | Alta Devices, Inc. | Epitaxial lift off stack having a universally shrunk handle and methods thereof |
US9679814B2 (en) | 2008-05-30 | 2017-06-13 | Alta Devices, Inc. | Epitaxial lift off stack having a pre-curved handle and methods thereof |
US9169554B2 (en) | 2008-05-30 | 2015-10-27 | Alta Devices, Inc. | Wafer carrier track |
US8008174B2 (en) | 2008-10-10 | 2011-08-30 | Alta Devices, Inc. | Continuous feed chemical vapor deposition |
US20100092668A1 (en) * | 2008-10-10 | 2010-04-15 | Alta Devices, Inc. | Concentric Showerhead For Vapor Deposition |
US9064810B2 (en) | 2008-10-10 | 2015-06-23 | Alta Devices, Inc. | Mesa etch method and composition for epitaxial lift off |
US20100116784A1 (en) * | 2008-10-10 | 2010-05-13 | Alta Devices, Inc. | Mesa etch method and composition for epitaxial lift off |
US9121096B2 (en) | 2008-10-10 | 2015-09-01 | Alta Devices, Inc. | Concentric showerhead for vapor deposition |
US20100120233A1 (en) * | 2008-10-10 | 2010-05-13 | Alta Devices, Inc. | Continuous Feed Chemical Vapor Deposition |
US20100147370A1 (en) * | 2008-12-08 | 2010-06-17 | Alta Devices, Inc. | Multiple stack deposition for epitaxial lift off |
US9068278B2 (en) | 2008-12-08 | 2015-06-30 | Alta Devices, Inc. | Multiple stack deposition for epitaxial lift off |
US10204831B2 (en) | 2008-12-17 | 2019-02-12 | Alta Devices, Inc. | Tape-based epitaxial lift off apparatuses and methods |
US9165805B2 (en) | 2008-12-17 | 2015-10-20 | Alta Devices, Inc. | Tape-based epitaxial lift off apparatuses and methods |
US20100151689A1 (en) * | 2008-12-17 | 2010-06-17 | Alta Devices, Inc. | Tape-based epitaxial lift off apparatuses and methods |
US8362592B2 (en) | 2009-02-27 | 2013-01-29 | Alta Devices Inc. | Tiled substrates for deposition and epitaxial lift off processes |
US20100229793A1 (en) * | 2009-03-16 | 2010-09-16 | Alta Devices, Inc. | Showerhead for vapor deposition |
US8985911B2 (en) | 2009-03-16 | 2015-03-24 | Alta Devices, Inc. | Wafer carrier track |
US11393683B2 (en) | 2009-10-14 | 2022-07-19 | Utica Leaseco, Llc | Methods for high growth rate deposition for forming different cells on a wafer |
US20110083601A1 (en) * | 2009-10-14 | 2011-04-14 | Alta Devices, Inc. | High growth rate deposition for group iii/v materials |
US9834860B2 (en) | 2009-10-14 | 2017-12-05 | Alta Devices, Inc. | Method of high growth rate deposition for group III/V materials |
US9127364B2 (en) | 2009-10-28 | 2015-09-08 | Alta Devices, Inc. | Reactor clean |
US20120291707A1 (en) * | 2009-11-19 | 2012-11-22 | Levitech B.V. | Floating wafer track with lateral stabilization mechanism |
US20120237695A1 (en) * | 2009-12-23 | 2012-09-20 | 2-Pye Solar, LLC | Method and apparatus for depositing a thin film |
WO2011116009A2 (en) * | 2010-03-16 | 2011-09-22 | Alta Devices Inc. | Vapor deposition reactor system |
WO2011116009A3 (en) * | 2010-03-16 | 2013-07-25 | Alta Devices Inc. | Vapor deposition reactor system |
US9938617B2 (en) | 2010-10-22 | 2018-04-10 | Agc Glass Europe | Modular coater separation |
CN103443325A (en) * | 2011-03-01 | 2013-12-11 | 应用材料公司 | Apparatus and process for atomic layer deposition |
US9644268B2 (en) * | 2011-08-31 | 2017-05-09 | Alta Devices, Inc. | Thermal bridge for chemical vapor deposition reactors |
US20130047922A1 (en) * | 2011-08-31 | 2013-02-28 | Alta Devices, Inc. | Thermal bridge for chemical vapor deposition reactors |
US10066297B2 (en) | 2011-08-31 | 2018-09-04 | Alta Devices, Inc. | Tiled showerhead for a semiconductor chemical vapor deposition reactor |
US9212422B2 (en) | 2011-08-31 | 2015-12-15 | Alta Devices, Inc. | CVD reactor with gas flow virtual walls |
US9175393B1 (en) | 2011-08-31 | 2015-11-03 | Alta Devices, Inc. | Tiled showerhead for a semiconductor chemical vapor deposition reactor |
US20170062258A1 (en) * | 2012-04-19 | 2017-03-02 | Intevac, Inc. | Wafer plate and mask arrangement for substrate fabrication |
US10679883B2 (en) * | 2012-04-19 | 2020-06-09 | Intevac, Inc. | Wafer plate and mask arrangement for substrate fabrication |
US9267205B1 (en) | 2012-05-30 | 2016-02-23 | Alta Devices, Inc. | Fastener system for supporting a liner plate in a gas showerhead reactor |
US9613647B2 (en) | 2013-07-30 | 2017-04-04 | Western Digital Technologies, Inc. | Method using epitaxial transfer to integrate HAMR photonic integrated circuit (PIC) into recording head wafer |
US9105286B2 (en) | 2013-07-30 | 2015-08-11 | HGST Netherlands B.V. | Method using epitaxial transfer to integrate HAMR photonic integrated circuit (PIC) into recording head wafer |
US10932323B2 (en) | 2015-08-03 | 2021-02-23 | Alta Devices, Inc. | Reflector and susceptor assembly for chemical vapor deposition reactor |
Also Published As
Publication number | Publication date |
---|---|
CN102084460A (en) | 2011-06-01 |
US20130098289A1 (en) | 2013-04-25 |
WO2009155119A2 (en) | 2009-12-23 |
EP2281300A2 (en) | 2011-02-09 |
TWI476295B (en) | 2015-03-11 |
EP2281300A4 (en) | 2013-07-17 |
US8602707B2 (en) | 2013-12-10 |
TW201006952A (en) | 2010-02-16 |
WO2009155119A3 (en) | 2010-02-25 |
US20090324379A1 (en) | 2009-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8602707B2 (en) | Methods and apparatus for a chemical vapor deposition reactor | |
US9121096B2 (en) | Concentric showerhead for vapor deposition | |
US8008174B2 (en) | Continuous feed chemical vapor deposition | |
US8985911B2 (en) | Wafer carrier track | |
US8859042B2 (en) | Methods for heating with lamps | |
US9169554B2 (en) | Wafer carrier track | |
US20160130724A1 (en) | Heating lamp system | |
US8852696B2 (en) | Method for vapor deposition | |
US20100206229A1 (en) | Vapor deposition reactor system | |
US20100212591A1 (en) | Reactor lid assembly for vapor deposition | |
US20110308463A1 (en) | Chemical vapor deposition reactor with isolated sequential processing zones |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: ALTA DEVICES, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HE, GANG;HIGASHI, GREGG;SORABJI, KHURSHED;AND OTHERS;REEL/FRAME:023235/0968;SIGNING DATES FROM 20090813 TO 20090909 |
|
AS | Assignment |
Owner name: SILICON VALLEY BANK, AS AGENT, CALIFORNIA Free format text: SECURITY AGREEMENT;ASSIGNOR:ALTA DEVICES, INC.;REEL/FRAME:030192/0391 Effective date: 20130404 |
|
AS | Assignment |
Owner name: AWBSCQEMGK, INC. (F/K/A ALTA DEVICES, INC.), CALIFORNIA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:SILICON VALLEY BANK, AS COLLATERAL AGENT;REEL/FRAME:034775/0973 Effective date: 20150114 Owner name: AWBSCQEMGK, INC. (F/K/A ALTA DEVICES, INC.), CALIF Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:SILICON VALLEY BANK, AS COLLATERAL AGENT;REEL/FRAME:034775/0973 Effective date: 20150114 |
|
AS | Assignment |
Owner name: HANERGY GLOBAL INVESTMENT AND SALES PTE. LTD., SINGAPORE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ALTA DEVICES, INC.;REEL/FRAME:038004/0078 Effective date: 20140707 Owner name: HANERGY GLOBAL INVESTMENT AND SALES PTE. LTD., SIN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ALTA DEVICES, INC.;REEL/FRAME:038004/0078 Effective date: 20140707 Owner name: AWBSCQEMGK, INC., CALIFORNIA Free format text: CHANGE OF NAME;ASSIGNOR:ALTA DEVICES, INC.;REEL/FRAME:038005/0990 Effective date: 20140707 Owner name: ALTA DEVICES, INC., CALIFORNIA Free format text: CHANGE OF NAME;ASSIGNOR:HANERGY ACQUISITION SUB INC.;REEL/FRAME:038006/0457 Effective date: 20140707 |
|
AS | Assignment |
Owner name: ALTA DEVICES, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HANERGY GLOBAL INVESTMENT AND SALES PTE. LTD;REEL/FRAME:038066/0958 Effective date: 20141110 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |