US20090303165A1 - Active matrix display device - Google Patents
Active matrix display device Download PDFInfo
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- US20090303165A1 US20090303165A1 US12/540,806 US54080609A US2009303165A1 US 20090303165 A1 US20090303165 A1 US 20090303165A1 US 54080609 A US54080609 A US 54080609A US 2009303165 A1 US2009303165 A1 US 2009303165A1
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- G09G2320/02—Improving the quality of display appearance
- G09G2320/0223—Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
Definitions
- the present invention relates to an active matrix display device in which a thin film luminescent element such as an EL (electroluminescence) element or LED (light emitting diode) element, that emits light by application of a driving current to an organic semiconductor film, is driven and controlled by a thin film transistor (hereinafter referred to as a TFT).
- a thin film luminescent element such as an EL (electroluminescence) element or LED (light emitting diode) element, that emits light by application of a driving current to an organic semiconductor film, is driven and controlled by a thin film transistor (hereinafter referred to as a TFT).
- FIG. 13 is a block diagram of an active matrix display device which uses organic thin-film EL elements of the charge-injection type as described above.
- an active matrix display device 1 A shown in the drawing on a transparent substrate 10 , a plurality of scanning lines gate, a plurality of data lines sig extending in the direction orthogonal to the direction of extension of the scanning lines gate, a plurality of common feeders com which run parallel to the data lines sig, and a plurality of pixels 7 which are formed in a matrix by the data lines sig and the scanning lines gate are arrayed.
- a data side drive circuit 3 and a scanning side drive circuit 4 are formed for data lines sig and scanning lines gate, respectively.
- Each of the pixels 7 includes a conduction control circuit 50 to which scanning signals are supplied through the scanning line gate and a thin film luminescent element 40 which emits light in response to picture signals supplied from the data line sig through the conduction control circuit 50 .
- the conduction control circuit 50 includes a first TFT 20 in which scanning signals are supplied to a gate electrode through the scanning line gate, a storage capacitor cap for retaining picture signals supplied from the data line sig through the first TFT 20 , and a second TFT 30 in which picture signals retained by the storage capacitor cap are supplied to a gate electrode.
- the second TFT 30 and the thin film luminescent element 40 are connected in series between an opposing electrode op (which will be described later in detail) and the common feeder con.
- the thin film luminescent element 40 emits light in response to a driving current applied from the common feeder con when the second TFT 30 is ON, and the emission is retained by the storage capacitor cap for a predetermined period of time.
- the first TFT 20 and the second TFT 30 are formed using an island-like semiconductor film.
- the first TFT 20 has a gate electrode 21 as a portion of the scanning line gate.
- the data line sig is electrically connected to one of source and drain regions through a contact hole of a first interlayer insulating film 51 , and a drain electrode 22 is electrically connected to the other.
- the drain electrode 22 extends toward the region in which the second TFT 30 is formed, and to this extension, a gate electrode 31 of the second TFT 30 is electrically connected through a contact hole of the first interlayer insulating film 51 .
- an interconnecting electrode 35 is electrically connected to one of the source and drain regions through a contact hole of the first interlayer insulating film 51 , and to the interconnecting electrode 35 , a pixel electrode 41 of the thin film luminescent element 40 is electrically connected through a contact hole of a second interlayer insulating film 52 .
- the pixel electrode 41 is formed independently by pixel 7 .
- an organic semiconductor film 43 and the opposing electrode op are deposited in that order.
- the organic semiconductor film 43 is formed by pixel 7 , it may be formed in a strip so as to extend over a plurality of pixels 7 .
- the opposing electrode op is formed not only on a display area 11 in which pixels 7 are arrayed, but also over substantially the entire surface of the transparent substrate 10 .
- the common feeder con is electrically connected through a contact hole of the first interlayer insulating film 51 .
- An extension 39 of the common feeder com is opposed to an extension 36 of the gate electrode 31 of the second TFT 30 with the first interlayer insulating film 51 as a dielectric film therebetween to form the storage capacitor cap.
- the present inventor suggests that by providing a thick insulating film (bank layer bank, a shaded region in which lines that slant to the left are drawn at a large pitch) between the opposing electrode op and the data line Big and the like, the capacitance that parasitizes the data line Big is decreased.
- a thick insulating film bank, a shaded region in which lines that slant to the left are drawn at a large pitch
- the present inventor suggests that by surrounding a region in which the organic semiconductor film 43 is formed by the insulating film (bank layer bank), when the organic semiconductor film 43 is formed of a liquid material (discharged liquid) discharged from an ink jet head, the discharged liquid is blocked by the bank layer bank and the discharged liquid is prevented from spreading to the sides.
- a large step bb is formed due to the existence of the thick bank layer bank, the opposing electrode op formed on the upper layer of the bank layer bank is easily disconnected at the step bb.
- the opposing electrode op in this portion is insulated from the surrounding opposing electrode op, resulting in a dot defect or line defect in display. If disconnection of the opposing electrode op occurs along the periphery of the bank layer bank that covers the surface of the data side drive circuit 3 and the scanning side drive circuit 4 , the opposing electrode op in the display area 11 is completely insulated from a terminal 12 , resulting in disenabled display.
- an active matrix display device includes a display area having a plurality of scanning lines on a substrate, a plurality of data lines extending in the direction orthogonal to the direction of extension of the scanning lines, and a plurality of pixels formed in a matrix by the data lines and the scanning lines.
- Each of the pixels is provided with a thin film luminescent element having a conduction control circuit including a TFT in which scanning signals are supplied to a gate electrode through the scanning lines, a pixel electrode, an organic semiconductor film deposited on the upper layer side of the pixel electrode, and an opposing electrode formed at least over the entire surface of the display area on the upper layer side of the organic semiconductor film.
- the thin film luminescent element emits light in response to picture signals supplied from the data lines through the conduction control circuit.
- a region in which the organic semiconductor film is formed is delimited by an insulating film formed in the lower layer side of the opposing electrode with a thickness that is larger than that of the organic semiconductor film, and the insulating film is provided with a discontinuities portion for connecting the individual opposing electrode sections of the pixels to each other through a planar section which does not have a step due to the insulating film.
- the opposing electrode is formed at least on the entire surface of the display area and is opposed to the data lines, a large amount of capacitance parasitizes the data lines if no measures are taken.
- a thick insulating film is interposed between the data lines and the opposing electrode, parasitization of capacitance in the data lines can be prevented. As a result, the load on the data side drive circuit can be decreased, resulting in lower consumption of electric power or faster display operation.
- a discontinuities portion is configured at a predetermined position of the thick insulating film and this section is planar. Accordingly, the opposing electrodes in the individual regions are electrically connected to each other through a section formed in the planar section, and even if disconnection occurs at a step due to the insulating film, since electrical connection is secured through the planar section which corresponds to the discontinuities portion of the insulating film, disadvantages resulting from disconnection of the opposing substrate do not occur.
- the active matrix display device even if a thick insulating film is formed around the organic semiconductor film to suppress parasitic capacitance and the like, disconnection does not occur in the opposing electrode formed on the upper layer of the insulating film, and thereby display quality and reliability of the active matrix display device can be improved.
- the conduction control circuit is provided with a first TFT in which the scanning signals are supplied to a gate electrode and a second TFT in which a gate electrode is connected to the data line through the first TFT, and the second TFT and the thin film luminescent element are connected in series between a common feeder formed independently of the data line and the scanning line for feeding a driving current and the opposing electrode. That is, although it is possible to configure the conduction control circuit with one TFT and a storage capacitor, in view of an increase in display quality, it is preferable that the conduction control circuit of each pixel be configured with two TFTs and a storage capacitor.
- the insulating film is used as a bank layer for preventing the spread of a discharged liquid when the organic semiconductor film is formed in the area delimited by the insulating film by an ink jet process.
- the insulating film preferably has a thickness of 1 ⁇ m or more.
- the discontinuities portion is formed in a section between the adjacent pixels in the direction of extension of the data lines, between adjacent pixels in the direction of extension of the scanning lines, or adjacent pixels in both directions.
- the insulating film may be extended along the data lines in a strip, and in such a case, the discontinuities portion may be formed on at least one end in the direction of extension.
- a region overlapping the region in which the conduction control circuit is formed is covered with the insulating film. That is, preferably, in the region in which the pixel electrode is formed, the thick insulating film is opened only at a planar section in which the conduction control circuit is not formed and the organic semiconductor film is formed only in the interior of this. In such a configuration, display unevenness due to layer thickness irregularity of the organic semiconductor film can be prevented.
- the driving current that is applied to the organic semiconductor film in the section which does not contribute to the display is a reactive current in terms of display.
- the thick insulating film is formed in the section in which such a reactive current should have flowed in the conventional structure, and a driving current is prevented from being applied thereat.
- an active matrix display device includes a data side drive circuit for supplying data signals through the data lines and a scanning side drive circuit for supplying scanning signals through the scanning lines in the periphery of the display area; the insulating film is also formed on the upper layer side of the scanning side drive circuit and the data side drive circuit, and the insulating film is provided with a discontinuities portion for connecting the opposing electrodes between the display area side and the substrate periphery side through a planar section which does not have a step caused by the insulating film at the position between the region in which the scanning side drive circuit is formed and the region in which the data side drive circuit is formed.
- the opposing electrode on the display area side and the opposing electrode on the substrate periphery side are connected through the planar section which does not have a step caused by the insulating film, and the electrical connection between the opposing electrode on the display area side and the opposing electrode on the substrate periphery side can be secured.
- the insulating film when the insulating film is composed of an organic material such as a resist film, a thick film can be formed easily.
- the insulating film when the insulating film is composed of an inorganic material, an alteration in the organic semiconductor film can be prevented even if the insulating film is in contact with the organic semiconductor film.
- FIG. 1 is a block diagram which schematically shows the general layout of an active matrix display device as embodiment 1 of the present invention.
- FIG. 2 is a plan view which shows a pixel included in the active matrix display device shown in FIG. 1 .
- FIGS. 3(A) , 3 (B), and 3 (C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ of FIG. 2 , respectively.
- FIG. 4 is a block diagram which schematically shows the general layout of an active matrix display device as variation 1 of the embodiment 1 of the present invention.
- FIG. 5 is a plan view which shows a pixel included in the active matrix display device shown in FIG. 4 .
- FIGS. 6(A) , 6 (B), and 6 (C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ of FIG. 5 , respectively.
- FIG. 7 is a block diagram which schematically shows the general layout of an active matrix display device as variation 2 of the embodiment 1 of the present invention.
- FIG. 8 is a plan view which shows a pixel included in the active matrix display device shown in FIG. 7 .
- FIGS. 9(A) , 9 (B), and 9 (C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ of FIG. 8 , respectively.
- FIG. 10 a block diagram which schematically shows the general layout of an active matrix display device as embodiment 2 of the present invention.
- FIG. 11 is a plan view which shows a pixel included in the active matrix display device shown in FIG. 10 .
- FIGS. 12(A) , 12 (B), and 12 (C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ of FIG. 11 , respectively.
- FIG. 13 is a block diagram which schematically shows the general layout of an active matrix display device as a comparative example with respect to the conventional device and a device in accordance with the present invention.
- FIG. 14 is a plan view which shows a pixel included in the active matrix display device shown in FIG. 13 .
- FIGS. 15(A) , 15 (B), and 15 (C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ of FIG. 14 , respectively.
- FIGS. 16(A) , 16 (B), and 16 (C) are other sectional views taken along the line A-A′, the line B-B′, and the line C-C′ of FIG. 14 , respectively.
- FIG. 1 is a block diagram which schematically shows the general layout of an active matrix display device.
- FIG. 2 is a plan view which shows a pixel included in the device shown in FIG. 1 .
- FIGS. 3(A) , 3 (B), and 3 (C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ of the FIG. 2 , respectively.
- the central section of a transparent substrate 10 as a base is defined as a display area 11 .
- a data side drive circuit 3 for outputting picture signals is formed on the end of data lines sig
- a scanning side drive circuit 4 is formed on the end of scanning lines gate.
- complementary TFTs are configured by n-type TFTs and p-type TFTs, and the complementary TFTs constitute a shift register circuit, a level shifter circuit, an analog switch circuit, and the like.
- a plurality of scanning lines gate, a plurality of data lines sig extending in the direction orthogonal to the direction of extension of the scanning lines gate, and a plurality of pixels 7 which are formed in a matrix by the data lines sig and the scanning lines gate are arrayed.
- Each of the pixels 7 includes a conduction control circuit 50 to which scanning signals are supplied through the scanning line gate and a thin film luminescent element 40 which emits light in response to picture signals supplied from the data line sig through the conduction control circuit 50 .
- the conduction control circuit 50 includes a first TFT 20 in which scanning signals are supplied to a gate electrode through the scanning line gate, a storage capacitor cap for retaining picture signals supplied from the data line sig through the first TFT 20 , and a second TFT 30 in which picture signals retained by the storage capacitor cap are supplied to a gate electrode.
- the second TFT 30 and the thin film luminescent element 40 are connected in series between an opposing electrode op (which will be described later in detail) and a common feeder com.
- the first TFT 20 and the second TFT 30 are formed using an island-like semiconductor film (silicon film).
- the first TFT 20 has a gate electrode 21 as a portion of the scanning line gate.
- the data line sig is electrically connected to one of source and drain regions through a contact hole of a first interlayer insulating film 51 , and a drain electrode 22 is electrically connected to the other.
- the drain electrode 22 extends toward the region in which the second TFT 30 is formed, and to this extension, a gate electrode 31 of the second TFT 30 is electrically connected through a contact hole of the first interlayer insulating film 51 .
- an interconnecting electrode 35 simultaneously formed with the data line sig is electrically connected through a contact hole of the first interlayer insulating film 51 , and to the interconnecting electrode 35 , a transparent pixel electrode 41 composed of an ITO film of the thin film luminescent element 40 is electrically connected through a contact hole of a second interlayer insulating film 52 .
- the pixel electrode 41 is independently formed by pixel 7 .
- an organic semiconductor film 43 composed of polyphenylene vinylene (PPV) or the like and the opposing electrode op composed of a metal film such as lithium-containing aluminum or calcium are deposited in that order to form the thin film luminescent element 40 .
- the organic semiconductor film 43 is formed in each pixel 7 , it may be formed in a strip so as to extend over a plurality of pixels 7 .
- the opposing electrode op is formed on the entire display area 11 and in a region excluding the periphery of a portion in which terminals 12 of the transparent substrate 10 are formed.
- the terminals 12 include a terminal of the opposing electrode op which is connected to wiring (not shown in the drawing) simultaneously formed with the opposing electrode op.
- a structure in which luminous efficiency (hole injection efficiency) is increased by providing a hole injection layer a structure in which luminous efficiency (electron injection efficiency) is increased by providing an electron injection layer, or a structure in which both a hole injection layer and an electron injection layer are formed, may be employed.
- the common feeder con is electrically connected through a contact hole of the first interlayer insulating film 51 .
- An extension 39 of the common feeder con is opposed to an extension 36 of the gate electrode 31 of the second TFT 30 with the first interlayer insulating film 51 as a dielectric film therebetween to form the storage capacitor cap.
- the active matrix display device 1 when the first TFT 20 is ON by being selected by scanning signals, picture signals from the data line sig are applied to the gate electrode 31 of the second TFT 30 through the first TFT 20 , and at the same time, picture signals are stored in the storage capacitor cap through the first TFT 20 .
- a voltage is applied with the opposing electrode op and the pixel electrode 41 serving as a negative pole and a positive pole, respectively, and in the region in which the applied voltage exceeds the threshold voltage, a current (driving current) applied to the organic semiconductor film 43 sharply increases.
- the luminescent element 40 emits light as an electroluminescence element or an LED element, and light of the luminescent element 40 is reflected from the opposing electrode op and is emitted after passing through the transparent pixel electrode 41 and the transparent substrate 10 . Since the driving current for emitting light as described above flows through a current path composed of the opposing electrode op, the organic semiconductor film 43 , the pixel electrode 41 , the second TFT 30 , and the common feeder con, when the second TFT 30 is OFF, the driving current stops flowing. However, in the gate electrode of the second TFT 30 , even if the first TFT 20 is OFF, the storage capacitor cap maintains an electric potential that is equivalent to the picture signals, and thereby the second TFT 30 remains ON. Therefore, the driving current continues to be applied to the luminescent element 40 , and the pixel stays illuminated. This state is maintained until new image data are stored in the storage capacitor cap and the second TFT 30 is OFF.
- a thick insulating film composed of a resist film or polyimide film (bank layer bank, a shaded region in which lines that slant to the left are drawn at a large pitch) is provided along the data lines sig and the scanning lines gate, and the opposing electrode op is formed on the upper layer side of the bank layer bank.
- the second interlayer insulating film 52 and the thick bank layer bank are interposed between the data line sig and the opposing electrode op, capacitance that parasitizes the data line sig is significantly reduced. Therefore, the load on the drive circuits 3 and 4 can be decreased and lower consumption of electric power or faster display operation can be achieved.
- the bank layer bank (diagonally shaded region) is also formed in the periphery of the transparent substrate 10 (a region external to the display area 11 ). Accordingly, both the data side drive circuit 3 and the scanning side drive circuit 4 are covered with the bank layer bank.
- the opposing electrode op is required to be formed at least on the display area 11 , and is not required to be formed in drive circuit regions. However, since the opposing electrode op is generally formed by mask-sputtering, alignment accuracy is low and the opposing electrode op may sometimes overlap drive circuits.
- the bank layer bank is interposed between the lead layer of the drive circuits and the opposing electrode op. Therefore, the parasitization of capacitance in the drive circuits 3 and 4 can be prevented, and thereby the load on the drive circuits 3 and 4 can be decreased and lower consumption of electric power or faster display operation can be achieved.
- the bank layer bank is also formed in the region in which the pixel electrode 41 is formed. Therefore, the organic semiconductor film 43 is not formed in the overlapping region with the interconnecting electrode 35 . That is, since the organic semiconductor film 43 is formed only in the planar section in the region in which the pixel electrode 41 is formed, the organic semiconductor film 43 is formed at a given thickness and display unevenness does not occur. If there is no bank layer bank in the overlapping region with the interconnecting electrode 35 , a driving current flows between this section and the opposing electrode op and the organic semiconductor film 43 emits light.
- the light is sandwiched between the interconnecting electrode 35 and the opposing electrode op, is not emitted externally, and does not contribute to display.
- a driving current which flows in the section that does not contribute to display is a reactive current in view of display.
- the bank layer bank is formed in the section in which such a reactive current should have flowed in the conventional structure, and a driving current is prevented from being applied thereat; a useless current can thereby be prevented from flowing through the common feeder con. Therefore, the width of the common feeder con can be decreased by that amount. As a result, the emission area can be increased, and thereby display characteristics such as luminance and contrast ratio can be improved.
- any pixel 7 is surrounded by the thick bank layer bank.
- the opposing electrode op of each pixel 7 is connected to the opposing electrode op of the adjacent pixel 7 by climbing over the bank layer bank.
- a discontinuities portion off is formed in the bank layer bank at the section corresponding to a section between the adjacent pixels 7 in the direction of extension of the data line sig.
- a discontinuities portion off is also formed in the bank layer bank at the section corresponding to a section between the adjacent pixels 7 in the direction of extension of the scanning line gate.
- a discontinuities portion off is also formed in the bank layer bank at each end of the data lines sig and the scanning lines gate in each of the directions of extension.
- the bank layer bank formed on the upper layer side of the scanning side drive circuit 4 and the data side drive circuit 3 is provided with a discontinuities portion off at the position between the region in which the scanning side drive circuit 4 is formed and the region in which the data side drive circuit 3 is formed.
- the opposing electrode op on the side of the display area 11 and the opposing electrode op in the periphery of the substrate are connected through the discontinuities portion off of the bank layer bank, and this discontinuities portion is also a planar section which does not have a step due to the bank layer bank.
- the opposing electrode op formed in the discontinuities portion off is not disconnected, the opposing electrode op on the side of the display area 11 and the opposing electrode op in the periphery of the substrate are securely connected through the discontinuities portion off of the bank layer bank, and the terminals 12 that are wired and connected to the opposing electrode op in the periphery of the substrate and the opposing electrode op in the display area 11 are securely connected.
- the bank layer bank functions as a black matrix, resulting in improvement in display quality such as contrast ratio. That is, in the active matrix display device 1 of this embodiment, since the opposing electrode op is formed over the entire surface of the pixel 7 on the face side of the transparent substrate 10 , reflected light from the opposing electrode op decreases contrast ratio. However, if the bank layer bank that functions as a preventer of parasitic capacitance is composed of a black resist, the bank layer bank also functions as a black matrix and shades the reflected light from the opposing electrode op, resulting in improvement in contrast ratio.
- the bank layer bank formed as described above is configured so as to surround the region in which the organic semiconductor film 43 is formed, in the fabricating process of the active matrix display device, when the organic semiconductor film 43 is formed of a liquid material (discharged liquid) discharged from an ink jet head, the bank layer bank blocks the discharged liquid and prevents the discharged liquid from spreading to the sides.
- the steps up to the fabrication of the first TFT 20 and the second TFT 30 on the transparent substrate 10 are substantially the same as those for fabricating the active matrix substrate of the liquid crystal active matrix display device 1 , the outline will be briefly described with reference to FIGS. 3(A) , 3 (B), and 3 (C).
- a protective film (not shown in the drawing) composed of a silicon oxide film having a thickness of approximately 2,000 to 5,000 angstroms is formed by a plasma CVD process using TEOS (tetraethoxysilane) or oxygen gas as a source gas, and then on the surface of the protective film, a semiconductor film composed of an amorphous silicon film having a thickness of approximately 300 to 700 angstroms is formed by a plasma CVD process.
- the semiconductor film composed of an amorphous silicon film is subjected to a crystallization step such as laser-annealing or solid phase epitaxy to crystallize the semiconductor film into a poly-silicon film.
- the island-like semiconductor film is formed by patterning the semiconductor film, and on the surface thereof, a gate insulating film 27 composed of a silicon oxide film or nitride film having a thickness of approximately 600 to 1,500 angstroms is formed by a plasma CVD process using TEOS (tetraethoxysilane) or oxygen gas as a source gas.
- TEOS tetraethoxysilane
- a conductive film composed of a metal film such as aluminum, tantalum, molybdenum, titanium, or tungsten is formed by sputtering and is then patterned to form gate electrodes 21 and 31 , and an extension 36 of the gate electrode 31 (gate electrode formation step). In this step, scanning lines gate are also formed.
- source and drain regions are formed in a self-aligned manner with respect to the gate electrodes 21 and 31 by implanting high-concentration phosphorus ions.
- the section in which impurities are not implanted becomes a channel region.
- the individual contact holes are formed.
- the data line sig, the drain electrode 22 , the common feeder con, the extension 39 of the common feeder con, and the interconnecting electrode 35 are formed.
- the first TFT 20 , the second TFT 30 , and the storage capacitor cap are formed.
- the second interlayer insulating film 52 is formed, and a contact hole is formed in the interlayer insulating film at the section corresponding to the interconnecting electrode 35 . Then, after an ITO film is formed on the entire surface of the second interlayer insulating film 52 , by patterning, the pixel electrode 41 that is electrically connected to the source/drain region of the second TFT 30 through the contact hole is formed in each pixel 7 .
- the resist is patterned so as to remain along the scanning line gate and the data line sig to form the bank layer bank.
- a discontinuities portion off is formed at a predetermined section of the bank layer bank.
- the resist section to be left along the data line sig is formed broadly so as to cover the common feeder com.
- the region in which the organic semiconductor film 43 of the luminescent element 40 is to be formed is surrounded by the bank layer bank.
- the individual organic semiconductor films 43 corresponding to R, G, and B are formed using an ink jet process.
- a liquid material (precursor) for constituting the organic semiconductor film 43 is discharged from an ink jet head to the interior region of the bank layer bank, and is fixed in the interior region of the bank layer bank to form the organic semiconductor film 43 .
- the bank layer bank is water repellent because it is composed of a resist.
- the precursor of the organic semiconductor film 43 uses a hydrophilic solvent, even if there is a discontinuities portion off in the bank layer bank that delimits the region in which the organic semiconductor film 43 is formed, since such a discontinuities portion off is narrow, the region in which the organic semiconductor film 43 is applied is securely defined by the bank layer bank and spreading to the adjacent pixel 7 does not occur. Therefore, the organic semiconductor film 43 , etc., can be formed only within the predetermined region.
- the bank layer bank since the precursor discharged from the ink jet head swells to a thickness of approximately 2 to 4 ⁇ m under the influence of surface tension, the bank layer bank must have a thickness of approximately 1 to 3 ⁇ m.
- the fixed organic semiconductor film 43 has a thickness of approximately 0.05 to 0.2 ⁇ m. Additionally, when the barrier of the bank layer bank has a height of 1 ⁇ m or more, even if the bank layer bank is not water repellent, the bank layer bank functions satisfactorily as a barrier. By forming such a thick bank layer bank, the region in which the organic semiconductor film 43 is formed can be defined when the film 43 is formed by an application process instead of the ink jet process.
- the opposing electrode op is formed substantially on the entire surface of the transparent substrate 10 .
- the full color active matrix display device 1 can be fabricated with high productivity.
- TFTs are also formed in the data side drive circuit 3 and the scanning side drive circuit 4 shown in FIG. 1 , the TFTs are formed entirely or partially repeating the steps of forming the TFTs in the pixel 7 described above. Therefore, TFTs included in the drive circuits are formed between the same layers as those of the TFTs of the pixel 7 .
- the first TFT 20 and the second TFT 30 both may be n-type or p-type, or one may be n-type and the other may be p-type. In any combination, since TFTs can be formed in a known manner, description thereof will be omitted.
- FIG. 4 is a block diagram which schematically shows the general layout of an active matrix display device.
- FIG. 5 is a plan view which shows a pixel included in the device shown in FIG. 4 .
- FIGS. 6(A) , 6 (B), and 6 (C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ of FIG. 5 , respectively. Since this embodiment has basically the same configuration as that of embodiment 1, the same reference numerals are used for the parts that are the same as those of embodiment 1, and detailed description thereof will be omitted.
- a thick insulating film composed of a resist film (bank layer bank, a shaded region in which lines that slant to the left are drawn at a large pitch) is also provided along the data lines sig and the scanning lines gate, and the opposing electrode op is formed on the upper layer side of the bank layer bank.
- the bank layer bank (diagonally shaded region) is also formed in the periphery of the transparent substrate 10 (a region external to the display area 11 ). Accordingly, both the data side drive circuit 3 and the scanning side drive circuit 4 are covered with the bank layer bank. Even if the opposing electrode op overlaps the region in which the drive circuits are formed, the bank layer bank is interposed between the wiring layer of the drive circuits and the opposing electrode op. Therefore, the parasitization of capacitance in the drive circuits 3 and 4 can be prevented, and thus the load on the drive circuits 3 and 4 can be decreased and lower consumption of electric power or faster display operation can be achieved.
- the bank layer bank is also formed, and thereby a useless reactive current can be prevented from flowing. Therefore, the width of the common feeder con can be decreased by that amount.
- any pixel 7 is surrounded by the bank layer bank. Therefore, since the individual organic semiconductor films 43 corresponding to R, G, and B can be formed in the predetermined region using an ink jet process, the full color active matrix display device 1 can be fabricated with high productivity.
- a discontinuities portion off is formed in the bank layer bank at the section corresponding to a section between the adjacent pixels 7 in the extending direction of the scanning lines gate.
- a discontinuities portion off is also formed in the bank layer bank at each end of the data lines sig and the scanning lines gate in each of the extending directions.
- the bank layer bank formed on the upper layer side of the scanning side drive circuit 4 and the data side drive circuit 3 is provided with a discontinuities portion off at the position between the region in which the scanning side drive circuit 4 is formed and the region in which the data side drive circuit 3 is formed. Accordingly, the opposing electrodes op are securely connected to each other through a planar section (discontinuities portion off) which does not have a step due to the bank layer bank, and disconnection does not occur.
- FIG. 7 is a block diagram which schematically shows the general layout of an active matrix display device.
- FIG. 8 is a plan view which shows a pixel included in the device shown in FIG. 7 .
- FIGS. 9(A) , 9 (B), and 9 (C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ of FIG. 8 , respectively. Since this embodiment has basically the same configuration as that of embodiment 1, the same reference numerals are used for the parts that are the same as those of embodiment 1, and detailed description thereof will be omitted.
- a thick insulating film composed of a resist film (bank layer bank, a shaded region in which lines that slant to the left are drawn at a large pitch) is also provided along the data lines sig and the scanning lines gate, and the opposing electrode op is formed on the upper layer side of the bank layer bank.
- the bank layer bank (diagonally shaded region) is also formed in the periphery of the transparent substrate 10 (a region external to the display area 11 ). Accordingly, both the data side drive circuit 3 and the scanning side drive circuit 4 are covered with the bank layer bank. Even if the opposing electrode op overlaps the region in which the drive circuits are formed, the bank layer bank is interposed between the wiring layer of the drive circuits and the opposing electrode op. Therefore, the parasitization of capacitance in the drive circuits 3 and 4 can be prevented, and thus the load on the drive circuits 3 and 4 can be decreased and lower consumption of electric power or faster display operation can be achieved.
- the bank layer bank is also formed, and thereby a useless reactive current can be prevented from flowing. Therefore, the width of the common feeder con can be decreased by that amount.
- any pixel 7 is surrounded by the bank layer bank. Therefore, since the individual organic semiconductor films 43 corresponding to R, G, and B can be formed in the predetermined region using an ink jet process, the full color active matrix display device 1 can be fabricated with high productivity.
- a discontinuities portion off is formed in the bank layer bank at the section corresponding to a section between the adjacent pixels 7 in the extending direction of the data lines sig.
- a discontinuities portion off is also formed in the bank layer bank at each end of the data lines sig and the scanning lines gate in each of the extending directions.
- the bank layer bank formed on the upper layer side of the scanning side drive circuit 4 and the data side drive circuit 3 is provided with a discontinuities portion off at the position between the region in which the scanning side drive circuit 4 is formed and the region in which the data side drive circuit 3 is formed. Accordingly, the opposing electrodes op are securely connected to each other through a planar section (discontinuities portion off) which does not have a step due to the bank layer bank, and disconnection does not occur.
- FIG. 10 is a block diagram which schematically shows the general layout of an active matrix display device.
- FIG. 11 is a plan view which shows a pixel included in the device shown in FIG. 10 .
- FIGS. 12(A) , 12 (B), and 12 (C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ of FIG. 11 , respectively. Since this embodiment basically has the same configuration as that of embodiment 1, the same reference numerals are used for the parts that are the same as those of embodiment 1, and detailed description thereof will be omitted.
- a thick insulating film composed of a resist film (bank layer bank, a shaded region in which lines that slant to the left are drawn at a large pitch) is formed in a strip along the data lines sig, and the opposing electrode op is formed on the upper layer side of the bank layer bank.
- the bank layer bank (diagonally shaded region) is also formed in the periphery of the transparent substrate 10 (a region external to the display area 11 ). Accordingly, both the data side drive circuit 3 and the scanning side drive circuit 4 are covered with the bank layer bank. Even if the opposing electrode op overlaps the region in which the drive circuits are formed, the bank layer bank is interposed between the wiring layer of the drive circuits and the opposing electrode op. Therefore, the parasitization of capacitance in the drive circuits 3 and 4 can be prevented, and thus the load on the drive circuits 3 and 4 can be decreased and lower consumption of electric power or faster display operation can be achieved.
- the bank layer bank is formed along the data lines sig, the individual organic semiconductor films 43 corresponding to R, G, and B can be formed in a strip in the region delimited in a strip by the bank layer bank using an ink jet process. Thereby, the full color active matrix display device 1 can be fabricated with high productivity.
- the bank layer bank is provided with a discontinuities portion off at each end of the data lines sig in the extending direction.
- the opposing electrode op of each pixel 7 is connected to the opposing electrode op of the adjacent pixel 7 by climbing over the bank layer bank.
- the opposing electrodes op of the individual pixels 7 are connected to the adjacent row of pixels in the extending direction of the scanning lines gate, at the end of the data lines sig, through a discontinuities portion off (planar section which does not have a step due to the bank layer bank). Therefore, the opposing electrodes op of the individual pixels 7 are connected to each other through the planar section which does not have a step due to the bank layer bank, and the opposing electrode op of any pixel 7 is not disconnected.
- the bank layer bank (insulating film) is composed of an organic material such as a resist film or a polyimide film
- a thick film can be easily formed.
- the bank layer bank (insulating film) is composed of an inorganic material such as a silicon oxide film or silicon nitride film deposited by a CVD process or SOG process, an alteration in the organic semiconductor film 43 can be prevented even if the insulating film is in contact with the organic semiconductor film 43 .
- the storage capacitor cap may be formed by a capacity line formed in parallel to the scanning line gate.
- an active matrix display device in accordance with the present invention, since a thick insulating film is interposed between data lines and opposing electrodes, the parasitization of capacitance in the data lines can be prevented. Therefore, the load on a data side drive circuit can be decreased, resulting in lower consumption of electric power or faster display operation. Additionally, a discontinuities portion is formed at a predetermined position of the thick insulating film and the section is planar. Accordingly, the opposing electrodes in the individual regions are electrically connected to each other through a section formed in the planar section, and even if disconnection occurs at a step due to the insulating film, electrical connection is secured through the planar section corresponding to the discontinuities portion of the insulating film.
Abstract
In order to provide an active matrix display device in which parasitic capacitance or the like is suppressed by forming a thick insulating film around an organic semiconductor film and disconnection or the like does not occur in the opposing electrode formed on the upper layer of the thick insulating film, in an active matrix display device, first, a bank layer composed of a resist film is formed along data lines and scanning lines, and by depositing an opposing electrode of a thin film luminescent element on the upper layer side of the bank layer, capacitance that parasitizes the data lines can be suppressed. Additionally, a discontinuities portion is formed in the bank layer. Since the discontinuities portion is a planar section which does not have a step due to the bank layer, disconnection of the opposing electrode does not occur at this section. When an organic semiconductor film is formed by an ink jet process, a liquid material discharged from an ink jet head is blocked by the bank layer.
Description
- This is a Divisional Application of application Ser. No. 11/905,591 filed Oct. 2, 2007, which is a Divisional of application Ser. No. 10/442,057 filed May 21, 2003, which is a Continuation of application Ser. No. 09/993,565 filed Nov. 27, 2001, which is a Divisional of application Ser. No. 09/284,774 filed Apr. 20, 1999, which is a National Phase of Application No. PCT/JP98/03663 filed Aug. 18, 1998. The entire disclosures of the prior applications are hereby incorporated by reference herein in their entirety.
- 1. Field of the Invention
- The present invention relates to an active matrix display device in which a thin film luminescent element such as an EL (electroluminescence) element or LED (light emitting diode) element, that emits light by application of a driving current to an organic semiconductor film, is driven and controlled by a thin film transistor (hereinafter referred to as a TFT).
- 2. Description of the Related Art
- Active matrix display devices using current-controlled luminescent elements such as EL elements or LED elements have been disclosed. Since luminescent elements used in display devices of this type are self-luminescent, backlights are not required, unlike in liquid crystal display devices, and the viewing angle dependence is small, all of which are advantageous.
-
FIG. 13 is a block diagram of an active matrix display device which uses organic thin-film EL elements of the charge-injection type as described above. In an active matrix display device 1A shown in the drawing, on atransparent substrate 10, a plurality of scanning lines gate, a plurality of data lines sig extending in the direction orthogonal to the direction of extension of the scanning lines gate, a plurality of common feeders com which run parallel to the data lines sig, and a plurality ofpixels 7 which are formed in a matrix by the data lines sig and the scanning lines gate are arrayed. A dataside drive circuit 3 and a scanningside drive circuit 4 are formed for data lines sig and scanning lines gate, respectively. Each of thepixels 7 includes aconduction control circuit 50 to which scanning signals are supplied through the scanning line gate and a thin filmluminescent element 40 which emits light in response to picture signals supplied from the data line sig through theconduction control circuit 50. In this example, theconduction control circuit 50 includes afirst TFT 20 in which scanning signals are supplied to a gate electrode through the scanning line gate, a storage capacitor cap for retaining picture signals supplied from the data line sig through thefirst TFT 20, and asecond TFT 30 in which picture signals retained by the storage capacitor cap are supplied to a gate electrode. Thesecond TFT 30 and the thin filmluminescent element 40 are connected in series between an opposing electrode op (which will be described later in detail) and the common feeder con. The thin filmluminescent element 40 emits light in response to a driving current applied from the common feeder con when thesecond TFT 30 is ON, and the emission is retained by the storage capacitor cap for a predetermined period of time. - With respect to the active matrix display device 1A having the configuration described above, as shown in
FIG. 14 andFIGS. 15(A) and 15(B) , in anypixel 7, thefirst TFT 20 and thesecond TFT 30 are formed using an island-like semiconductor film. The first TFT 20 has agate electrode 21 as a portion of the scanning line gate. In thefirst TFT 20, the data line sig is electrically connected to one of source and drain regions through a contact hole of a firstinterlayer insulating film 51, and adrain electrode 22 is electrically connected to the other. Thedrain electrode 22 extends toward the region in which thesecond TFT 30 is formed, and to this extension, agate electrode 31 of thesecond TFT 30 is electrically connected through a contact hole of the firstinterlayer insulating film 51. In thesecond TFT 30, an interconnectingelectrode 35 is electrically connected to one of the source and drain regions through a contact hole of the firstinterlayer insulating film 51, and to the interconnectingelectrode 35, apixel electrode 41 of the thin filmluminescent element 40 is electrically connected through a contact hole of a secondinterlayer insulating film 52. - As is clear from the
FIG. 14 andFIGS. 15(B) and 15(C) , thepixel electrode 41 is formed independently bypixel 7. On the upper layer side of thepixel electrode 41, anorganic semiconductor film 43 and the opposing electrode op are deposited in that order. Although theorganic semiconductor film 43 is formed bypixel 7, it may be formed in a strip so as to extend over a plurality ofpixels 7. As is seen fromFIG. 13 , the opposing electrode op is formed not only on adisplay area 11 in whichpixels 7 are arrayed, but also over substantially the entire surface of thetransparent substrate 10. - Again, in
FIG. 14 andFIG. 15(A) , to the other one of the source and drain regions of thesecond TFT 30, the common feeder con is electrically connected through a contact hole of the first interlayerinsulating film 51. Anextension 39 of the common feeder com is opposed to anextension 36 of thegate electrode 31 of thesecond TFT 30 with the firstinterlayer insulating film 51 as a dielectric film therebetween to form the storage capacitor cap. - However, in the active matrix display device 1A, since only the second
interlayer insulating film 52 is interposed between the opposing electrode op which faces thepixel electrode 41 and the data line sig on the sametransparent substrate 10, which is different from a liquid crystal active matrix display device, a large amount of capacitance parasitizes the data line sig and the load on the dataside drive circuit 3 increases. SUMMARY OF THE INVENTION - Therefore, as shown in
FIG. 13 ,FIG. 14 , andFIGS. 16(A) , 16(B), and 16(C), the present inventor suggests that by providing a thick insulating film (bank layer bank, a shaded region in which lines that slant to the left are drawn at a large pitch) between the opposing electrode op and the data line Big and the like, the capacitance that parasitizes the data line Big is decreased. At the same time, the present inventor suggests that by surrounding a region in which theorganic semiconductor film 43 is formed by the insulating film (bank layer bank), when theorganic semiconductor film 43 is formed of a liquid material (discharged liquid) discharged from an ink jet head, the discharged liquid is blocked by the bank layer bank and the discharged liquid is prevented from spreading to the sides. However, if such a configuration is adopted, a large step bb is formed due to the existence of the thick bank layer bank, the opposing electrode op formed on the upper layer of the bank layer bank is easily disconnected at the step bb. If such disconnection of the opposing electrode op occurs at the step bb, the opposing electrode op in this portion is insulated from the surrounding opposing electrode op, resulting in a dot defect or line defect in display. If disconnection of the opposing electrode op occurs along the periphery of the bank layer bank that covers the surface of the dataside drive circuit 3 and the scanningside drive circuit 4, the opposing electrode op in thedisplay area 11 is completely insulated from aterminal 12, resulting in disenabled display. - Accordingly, it is an object of the present invention to provide an active matrix display device in which, even when parasitic capacitance is suppressed by forming a thick insulating film around an organic semiconductor film, disconnection or the like does not occur in the opposing electrode formed on the upper layer of the thick insulating film.
- In order to achieve the object described above, in the present invention, an active matrix display device includes a display area having a plurality of scanning lines on a substrate, a plurality of data lines extending in the direction orthogonal to the direction of extension of the scanning lines, and a plurality of pixels formed in a matrix by the data lines and the scanning lines. Each of the pixels is provided with a thin film luminescent element having a conduction control circuit including a TFT in which scanning signals are supplied to a gate electrode through the scanning lines, a pixel electrode, an organic semiconductor film deposited on the upper layer side of the pixel electrode, and an opposing electrode formed at least over the entire surface of the display area on the upper layer side of the organic semiconductor film. The thin film luminescent element emits light in response to picture signals supplied from the data lines through the conduction control circuit. A region in which the organic semiconductor film is formed is delimited by an insulating film formed in the lower layer side of the opposing electrode with a thickness that is larger than that of the organic semiconductor film, and the insulating film is provided with a discontinuities portion for connecting the individual opposing electrode sections of the pixels to each other through a planar section which does not have a step due to the insulating film.
- In the present invention, since the opposing electrode is formed at least on the entire surface of the display area and is opposed to the data lines, a large amount of capacitance parasitizes the data lines if no measures are taken. In the present invention, however, since a thick insulating film is interposed between the data lines and the opposing electrode, parasitization of capacitance in the data lines can be prevented. As a result, the load on the data side drive circuit can be decreased, resulting in lower consumption of electric power or faster display operation. If a thick insulating film is formed, although the insulating film may form a large step and disconnection may occur in the opposing electrode formed on the upper layer side of the insulating film, in the present invention, a discontinuities portion is configured at a predetermined position of the thick insulating film and this section is planar. Accordingly, the opposing electrodes in the individual regions are electrically connected to each other through a section formed in the planar section, and even if disconnection occurs at a step due to the insulating film, since electrical connection is secured through the planar section which corresponds to the discontinuities portion of the insulating film, disadvantages resulting from disconnection of the opposing substrate do not occur. Therefore, in the active matrix display device, even if a thick insulating film is formed around the organic semiconductor film to suppress parasitic capacitance and the like, disconnection does not occur in the opposing electrode formed on the upper layer of the insulating film, and thereby display quality and reliability of the active matrix display device can be improved.
- In the present invention, preferably, the conduction control circuit is provided with a first TFT in which the scanning signals are supplied to a gate electrode and a second TFT in which a gate electrode is connected to the data line through the first TFT, and the second TFT and the thin film luminescent element are connected in series between a common feeder formed independently of the data line and the scanning line for feeding a driving current and the opposing electrode. That is, although it is possible to configure the conduction control circuit with one TFT and a storage capacitor, in view of an increase in display quality, it is preferable that the conduction control circuit of each pixel be configured with two TFTs and a storage capacitor.
- In the present invention, preferably, the insulating film is used as a bank layer for preventing the spread of a discharged liquid when the organic semiconductor film is formed in the area delimited by the insulating film by an ink jet process. In such a case, the insulating film preferably has a thickness of 1 μm or more.
- In the present invention, when the insulating film is formed along the data lines and the scanning lines such that the insulating film surrounds a region in which the organic semiconductor film is formed, the discontinuities portion is formed in a section between the adjacent pixels in the direction of extension of the data lines, between adjacent pixels in the direction of extension of the scanning lines, or adjacent pixels in both directions.
- In a different manner from the mode described above, the insulating film may be extended along the data lines in a strip, and in such a case, the discontinuities portion may be formed on at least one end in the direction of extension.
- In the present invention, preferably, in the region in which the pixel electrode is formed, a region overlapping the region in which the conduction control circuit is formed is covered with the insulating film. That is, preferably, in the region in which the pixel electrode is formed, the thick insulating film is opened only at a planar section in which the conduction control circuit is not formed and the organic semiconductor film is formed only in the interior of this. In such a configuration, display unevenness due to layer thickness irregularity of the organic semiconductor film can be prevented. In the region in which the pixel electrode is formed, in a region overlapping the region in which the conduction control circuit is formed, even if the organic semiconductor film emits light because of a driving current applied from the opposing electrode, the light is shaded by the conduction control circuit and does not contribute to the display. The driving current that is applied to the organic semiconductor film in the section which does not contribute to the display is a reactive current in terms of display. In the present invention, the thick insulating film is formed in the section in which such a reactive current should have flowed in the conventional structure, and a driving current is prevented from being applied thereat. As a result, the amount of current applied to the common feeder can be reduced, and by decreasing the width of the common feeder by that amount, the emission area can be increased, and thereby display characteristics such as luminance and contrast ratio can be improved.
- In the present invention, preferably, an active matrix display device includes a data side drive circuit for supplying data signals through the data lines and a scanning side drive circuit for supplying scanning signals through the scanning lines in the periphery of the display area; the insulating film is also formed on the upper layer side of the scanning side drive circuit and the data side drive circuit, and the insulating film is provided with a discontinuities portion for connecting the opposing electrodes between the display area side and the substrate periphery side through a planar section which does not have a step caused by the insulating film at the position between the region in which the scanning side drive circuit is formed and the region in which the data side drive circuit is formed. In such a configuration, even if disconnection of the opposing electrode occurs along the periphery of the insulating film that covers the surface of the data side drive circuit and the scanning side drive circuit, the opposing electrode on the display area side and the opposing electrode on the substrate periphery side are connected through the planar section which does not have a step caused by the insulating film, and the electrical connection between the opposing electrode on the display area side and the opposing electrode on the substrate periphery side can be secured.
- In the present invention, when the insulating film is composed of an organic material such as a resist film, a thick film can be formed easily. In contrast, when the insulating film is composed of an inorganic material, an alteration in the organic semiconductor film can be prevented even if the insulating film is in contact with the organic semiconductor film.
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FIG. 1 is a block diagram which schematically shows the general layout of an active matrix display device asembodiment 1 of the present invention. -
FIG. 2 is a plan view which shows a pixel included in the active matrix display device shown inFIG. 1 . -
FIGS. 3(A) , 3(B), and 3(C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ ofFIG. 2 , respectively. -
FIG. 4 is a block diagram which schematically shows the general layout of an active matrix display device asvariation 1 of theembodiment 1 of the present invention. -
FIG. 5 is a plan view which shows a pixel included in the active matrix display device shown inFIG. 4 . -
FIGS. 6(A) , 6(B), and 6(C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ ofFIG. 5 , respectively. -
FIG. 7 is a block diagram which schematically shows the general layout of an active matrix display device as variation 2 of theembodiment 1 of the present invention. -
FIG. 8 is a plan view which shows a pixel included in the active matrix display device shown inFIG. 7 . -
FIGS. 9(A) , 9(B), and 9(C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ ofFIG. 8 , respectively. -
FIG. 10 a block diagram which schematically shows the general layout of an active matrix display device as embodiment 2 of the present invention. -
FIG. 11 is a plan view which shows a pixel included in the active matrix display device shown inFIG. 10 . -
FIGS. 12(A) , 12(B), and 12(C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ ofFIG. 11 , respectively. -
FIG. 13 is a block diagram which schematically shows the general layout of an active matrix display device as a comparative example with respect to the conventional device and a device in accordance with the present invention. -
FIG. 14 is a plan view which shows a pixel included in the active matrix display device shown inFIG. 13 . -
FIGS. 15(A) , 15(B), and 15(C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ ofFIG. 14 , respectively. -
FIGS. 16(A) , 16(B), and 16(C) are other sectional views taken along the line A-A′, the line B-B′, and the line C-C′ ofFIG. 14 , respectively. - Embodiments of the present invention will be described with reference to the drawings. In the following description, the same reference numerals are used for the elements which are the same as those described in
FIG. 13 throughFIG. 16(C) . -
FIG. 1 is a block diagram which schematically shows the general layout of an active matrix display device.FIG. 2 is a plan view which shows a pixel included in the device shown inFIG. 1 .FIGS. 3(A) , 3(B), and 3(C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ of theFIG. 2 , respectively. - In an active
matrix display device 1 shown inFIG. 1 , the central section of atransparent substrate 10 as a base is defined as adisplay area 11. In the periphery of thetransparent substrate 10, a dataside drive circuit 3 for outputting picture signals is formed on the end of data lines sig, and a scanningside drive circuit 4 is formed on the end of scanning lines gate. In thedrive circuits display area 11, in a manner similar to that in the active matrix substrate in the liquid crystal active matrix display device, on thetransparent substrate 10, a plurality of scanning lines gate, a plurality of data lines sig extending in the direction orthogonal to the direction of extension of the scanning lines gate, and a plurality ofpixels 7 which are formed in a matrix by the data lines sig and the scanning lines gate are arrayed. - Each of the
pixels 7 includes aconduction control circuit 50 to which scanning signals are supplied through the scanning line gate and a thin filmluminescent element 40 which emits light in response to picture signals supplied from the data line sig through theconduction control circuit 50. In the example shown here, theconduction control circuit 50 includes afirst TFT 20 in which scanning signals are supplied to a gate electrode through the scanning line gate, a storage capacitor cap for retaining picture signals supplied from the data line sig through thefirst TFT 20, and asecond TFT 30 in which picture signals retained by the storage capacitor cap are supplied to a gate electrode. Thesecond TFT 30 and the thin filmluminescent element 40 are connected in series between an opposing electrode op (which will be described later in detail) and a common feeder com. - With respect to the active
matrix display device 1 having the configuration described above, as shown inFIG. 2 andFIGS. 3(A) and 3(B) , in anypixel 7, thefirst TFT 20 and thesecond TFT 30 are formed using an island-like semiconductor film (silicon film). - The
first TFT 20 has agate electrode 21 as a portion of the scanning line gate. In thefirst TFT 20, the data line sig is electrically connected to one of source and drain regions through a contact hole of a firstinterlayer insulating film 51, and adrain electrode 22 is electrically connected to the other. Thedrain electrode 22 extends toward the region in which thesecond TFT 30 is formed, and to this extension, agate electrode 31 of thesecond TFT 30 is electrically connected through a contact hole of the firstinterlayer insulating film 51. - To one of source and drain regions of the
second TFT 30, an interconnectingelectrode 35 simultaneously formed with the data line sig is electrically connected through a contact hole of the firstinterlayer insulating film 51, and to the interconnectingelectrode 35, atransparent pixel electrode 41 composed of an ITO film of the thin filmluminescent element 40 is electrically connected through a contact hole of a secondinterlayer insulating film 52. - As is clear from
FIG. 2 andFIGS. 3(B) and 3(C) , thepixel electrode 41 is independently formed bypixel 7. On the upper layer side of thepixel electrode 41, anorganic semiconductor film 43 composed of polyphenylene vinylene (PPV) or the like and the opposing electrode op composed of a metal film such as lithium-containing aluminum or calcium are deposited in that order to form the thin filmluminescent element 40. Although theorganic semiconductor film 43 is formed in eachpixel 7, it may be formed in a strip so as to extend over a plurality ofpixels 7. The opposing electrode op is formed on theentire display area 11 and in a region excluding the periphery of a portion in whichterminals 12 of thetransparent substrate 10 are formed. Theterminals 12 include a terminal of the opposing electrode op which is connected to wiring (not shown in the drawing) simultaneously formed with the opposing electrode op. - Additionally, for the thin film
luminescent element 40, a structure in which luminous efficiency (hole injection efficiency) is increased by providing a hole injection layer, a structure in which luminous efficiency (electron injection efficiency) is increased by providing an electron injection layer, or a structure in which both a hole injection layer and an electron injection layer are formed, may be employed. - Again, in
FIG. 2 andFIG. 3(A) , to the other one of source and drain regions of thesecond TFT 30, the common feeder con is electrically connected through a contact hole of the firstinterlayer insulating film 51. Anextension 39 of the common feeder con is opposed to anextension 36 of thegate electrode 31 of thesecond TFT 30 with the firstinterlayer insulating film 51 as a dielectric film therebetween to form the storage capacitor cap. - As described above, in the active
matrix display device 1, when thefirst TFT 20 is ON by being selected by scanning signals, picture signals from the data line sig are applied to thegate electrode 31 of thesecond TFT 30 through thefirst TFT 20, and at the same time, picture signals are stored in the storage capacitor cap through thefirst TFT 20. As a result, when thesecond TFT 30 is ON, a voltage is applied with the opposing electrode op and thepixel electrode 41 serving as a negative pole and a positive pole, respectively, and in the region in which the applied voltage exceeds the threshold voltage, a current (driving current) applied to theorganic semiconductor film 43 sharply increases. Accordingly, theluminescent element 40 emits light as an electroluminescence element or an LED element, and light of theluminescent element 40 is reflected from the opposing electrode op and is emitted after passing through thetransparent pixel electrode 41 and thetransparent substrate 10. Since the driving current for emitting light as described above flows through a current path composed of the opposing electrode op, theorganic semiconductor film 43, thepixel electrode 41, thesecond TFT 30, and the common feeder con, when thesecond TFT 30 is OFF, the driving current stops flowing. However, in the gate electrode of thesecond TFT 30, even if thefirst TFT 20 is OFF, the storage capacitor cap maintains an electric potential that is equivalent to the picture signals, and thereby thesecond TFT 30 remains ON. Therefore, the driving current continues to be applied to theluminescent element 40, and the pixel stays illuminated. This state is maintained until new image data are stored in the storage capacitor cap and thesecond TFT 30 is OFF. - In the active
matrix display device 1 having the configuration described above, in this embodiment, in order to prevent the data lines sig from being parasitized with a large amount of capacitance, as shown inFIG. 1 ,FIG. 2 , andFIGS. 3(A) , 3(B), and 3(C), a thick insulating film composed of a resist film or polyimide film (bank layer bank, a shaded region in which lines that slant to the left are drawn at a large pitch) is provided along the data lines sig and the scanning lines gate, and the opposing electrode op is formed on the upper layer side of the bank layer bank. Thereby, since the secondinterlayer insulating film 52 and the thick bank layer bank are interposed between the data line sig and the opposing electrode op, capacitance that parasitizes the data line sig is significantly reduced. Therefore, the load on thedrive circuits - As shown in
FIG. 1 , the bank layer bank (diagonally shaded region) is also formed in the periphery of the transparent substrate 10 (a region external to the display area 11). Accordingly, both the dataside drive circuit 3 and the scanningside drive circuit 4 are covered with the bank layer bank. The opposing electrode op is required to be formed at least on thedisplay area 11, and is not required to be formed in drive circuit regions. However, since the opposing electrode op is generally formed by mask-sputtering, alignment accuracy is low and the opposing electrode op may sometimes overlap drive circuits. However, in this embodiment, even if the opposing electrode op overlaps the region in which the drive circuits are formed, the bank layer bank is interposed between the lead layer of the drive circuits and the opposing electrode op. Therefore, the parasitization of capacitance in thedrive circuits drive circuits - Further, in this embodiment, in the region in which the
pixel electrode 41 is formed, in a region in which theconduction control circuit 50 overlaps the interconnectingelectrode 35, the bank layer bank is also formed. Therefore, theorganic semiconductor film 43 is not formed in the overlapping region with the interconnectingelectrode 35. That is, since theorganic semiconductor film 43 is formed only in the planar section in the region in which thepixel electrode 41 is formed, theorganic semiconductor film 43 is formed at a given thickness and display unevenness does not occur. If there is no bank layer bank in the overlapping region with the interconnectingelectrode 35, a driving current flows between this section and the opposing electrode op and theorganic semiconductor film 43 emits light. However, the light is sandwiched between the interconnectingelectrode 35 and the opposing electrode op, is not emitted externally, and does not contribute to display. Such a driving current which flows in the section that does not contribute to display is a reactive current in view of display. However, in this embodiment, the bank layer bank is formed in the section in which such a reactive current should have flowed in the conventional structure, and a driving current is prevented from being applied thereat; a useless current can thereby be prevented from flowing through the common feeder con. Therefore, the width of the common feeder con can be decreased by that amount. As a result, the emission area can be increased, and thereby display characteristics such as luminance and contrast ratio can be improved. - Moreover, in this embodiment, since the bank layer bank is formed along the data lines sig and the scanning lines gate, any
pixel 7 is surrounded by the thick bank layer bank. Thereby, if no measures are taken, the opposing electrode op of eachpixel 7 is connected to the opposing electrode op of theadjacent pixel 7 by climbing over the bank layer bank. In this embodiment, however, a discontinuities portion off is formed in the bank layer bank at the section corresponding to a section between theadjacent pixels 7 in the direction of extension of the data line sig. A discontinuities portion off is also formed in the bank layer bank at the section corresponding to a section between theadjacent pixels 7 in the direction of extension of the scanning line gate. Further, a discontinuities portion off is also formed in the bank layer bank at each end of the data lines sig and the scanning lines gate in each of the directions of extension. - Since such a discontinuities portion off does not have the thick bank layer bank, it is a planar section which does not have a large step due to the bank layer bank and the opposing electrode op formed in this section does not suffer from disconnection. Thereby, the opposing
electrode 7 of eachpixel 7 is securely connected to each other through the planar section which does not have a step due to the bank layer bank. Therefore, even if a thick insulating layer (bank layer bank) is formed around thepixel 7 to suppress parasitic capacitance and the like, disconnection does not occur in the opposing electrode op formed on the upper layer of the thick insulating film (bank layer bank). - Moreover, the bank layer bank formed on the upper layer side of the scanning
side drive circuit 4 and the dataside drive circuit 3 is provided with a discontinuities portion off at the position between the region in which the scanningside drive circuit 4 is formed and the region in which the dataside drive circuit 3 is formed. Thereby, the opposing electrode op on the side of thedisplay area 11 and the opposing electrode op in the periphery of the substrate are connected through the discontinuities portion off of the bank layer bank, and this discontinuities portion is also a planar section which does not have a step due to the bank layer bank. Accordingly, since the opposing electrode op formed in the discontinuities portion off is not disconnected, the opposing electrode op on the side of thedisplay area 11 and the opposing electrode op in the periphery of the substrate are securely connected through the discontinuities portion off of the bank layer bank, and theterminals 12 that are wired and connected to the opposing electrode op in the periphery of the substrate and the opposing electrode op in thedisplay area 11 are securely connected. - If the bank layer bank is formed of a black resist, the bank layer bank functions as a black matrix, resulting in improvement in display quality such as contrast ratio. That is, in the active
matrix display device 1 of this embodiment, since the opposing electrode op is formed over the entire surface of thepixel 7 on the face side of thetransparent substrate 10, reflected light from the opposing electrode op decreases contrast ratio. However, if the bank layer bank that functions as a preventer of parasitic capacitance is composed of a black resist, the bank layer bank also functions as a black matrix and shades the reflected light from the opposing electrode op, resulting in improvement in contrast ratio. - Since the bank layer bank formed as described above is configured so as to surround the region in which the
organic semiconductor film 43 is formed, in the fabricating process of the active matrix display device, when theorganic semiconductor film 43 is formed of a liquid material (discharged liquid) discharged from an ink jet head, the bank layer bank blocks the discharged liquid and prevents the discharged liquid from spreading to the sides. In the method for fabricating the activematrix display device 1 described below, since the steps up to the fabrication of thefirst TFT 20 and thesecond TFT 30 on thetransparent substrate 10 are substantially the same as those for fabricating the active matrix substrate of the liquid crystal activematrix display device 1, the outline will be briefly described with reference toFIGS. 3(A) , 3(B), and 3(C). - First, on the
transparent substrate 10, as required, a protective film (not shown in the drawing) composed of a silicon oxide film having a thickness of approximately 2,000 to 5,000 angstroms is formed by a plasma CVD process using TEOS (tetraethoxysilane) or oxygen gas as a source gas, and then on the surface of the protective film, a semiconductor film composed of an amorphous silicon film having a thickness of approximately 300 to 700 angstroms is formed by a plasma CVD process. Next, the semiconductor film composed of an amorphous silicon film is subjected to a crystallization step such as laser-annealing or solid phase epitaxy to crystallize the semiconductor film into a poly-silicon film. - Next, the island-like semiconductor film is formed by patterning the semiconductor film, and on the surface thereof, a gate insulating film 27 composed of a silicon oxide film or nitride film having a thickness of approximately 600 to 1,500 angstroms is formed by a plasma CVD process using TEOS (tetraethoxysilane) or oxygen gas as a source gas.
- Next, a conductive film composed of a metal film such as aluminum, tantalum, molybdenum, titanium, or tungsten is formed by sputtering and is then patterned to form
gate electrodes extension 36 of the gate electrode 31 (gate electrode formation step). In this step, scanning lines gate are also formed. - In this state, source and drain regions are formed in a self-aligned manner with respect to the
gate electrodes - Next, after the first
interlayer insulating film 51 is formed, the individual contact holes are formed. Then, the data line sig, thedrain electrode 22, the common feeder con, theextension 39 of the common feeder con, and the interconnectingelectrode 35 are formed. As a result, thefirst TFT 20, thesecond TFT 30, and the storage capacitor cap are formed. - Next, the second
interlayer insulating film 52 is formed, and a contact hole is formed in the interlayer insulating film at the section corresponding to the interconnectingelectrode 35. Then, after an ITO film is formed on the entire surface of the secondinterlayer insulating film 52, by patterning, thepixel electrode 41 that is electrically connected to the source/drain region of thesecond TFT 30 through the contact hole is formed in eachpixel 7. - Next, after a resist layer is formed on the surface side of the second
interlayer insulating film 52, the resist is patterned so as to remain along the scanning line gate and the data line sig to form the bank layer bank. A discontinuities portion off is formed at a predetermined section of the bank layer bank. At this stage, the resist section to be left along the data line sig is formed broadly so as to cover the common feeder com. As a result, the region in which theorganic semiconductor film 43 of theluminescent element 40 is to be formed is surrounded by the bank layer bank. - Next, in the region delimited in a matrix by the bank layer bank, the individual
organic semiconductor films 43 corresponding to R, G, and B are formed using an ink jet process. To this end, a liquid material (precursor) for constituting theorganic semiconductor film 43 is discharged from an ink jet head to the interior region of the bank layer bank, and is fixed in the interior region of the bank layer bank to form theorganic semiconductor film 43. The bank layer bank is water repellent because it is composed of a resist. In contrast, since the precursor of theorganic semiconductor film 43 uses a hydrophilic solvent, even if there is a discontinuities portion off in the bank layer bank that delimits the region in which theorganic semiconductor film 43 is formed, since such a discontinuities portion off is narrow, the region in which theorganic semiconductor film 43 is applied is securely defined by the bank layer bank and spreading to theadjacent pixel 7 does not occur. Therefore, theorganic semiconductor film 43, etc., can be formed only within the predetermined region. In this step, since the precursor discharged from the ink jet head swells to a thickness of approximately 2 to 4 μm under the influence of surface tension, the bank layer bank must have a thickness of approximately 1 to 3 μm. The fixedorganic semiconductor film 43 has a thickness of approximately 0.05 to 0.2 μm. Additionally, when the barrier of the bank layer bank has a height of 1 μm or more, even if the bank layer bank is not water repellent, the bank layer bank functions satisfactorily as a barrier. By forming such a thick bank layer bank, the region in which theorganic semiconductor film 43 is formed can be defined when thefilm 43 is formed by an application process instead of the ink jet process. - Then, the opposing electrode op is formed substantially on the entire surface of the
transparent substrate 10. - In accordance with the fabrication method described above, since the individual
organic semiconductor films 43 corresponding to R, G, and B can be formed in the predetermined region using the ink jet process, the full color activematrix display device 1 can be fabricated with high productivity. - Additionally, although TFTs are also formed in the data
side drive circuit 3 and the scanningside drive circuit 4 shown inFIG. 1 , the TFTs are formed entirely or partially repeating the steps of forming the TFTs in thepixel 7 described above. Therefore, TFTs included in the drive circuits are formed between the same layers as those of the TFTs of thepixel 7. With respect to thefirst TFT 20 and thesecond TFT 30, both may be n-type or p-type, or one may be n-type and the other may be p-type. In any combination, since TFTs can be formed in a known manner, description thereof will be omitted. -
FIG. 4 is a block diagram which schematically shows the general layout of an active matrix display device.FIG. 5 is a plan view which shows a pixel included in the device shown inFIG. 4 .FIGS. 6(A) , 6(B), and 6(C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ ofFIG. 5 , respectively. Since this embodiment has basically the same configuration as that ofembodiment 1, the same reference numerals are used for the parts that are the same as those ofembodiment 1, and detailed description thereof will be omitted. - As shown in
FIG. 4 ,FIG. 5 , andFIGS. 6(A) , 6(B), and 6(C), in an activematrix display device 1 of this embodiment, a thick insulating film composed of a resist film (bank layer bank, a shaded region in which lines that slant to the left are drawn at a large pitch) is also provided along the data lines sig and the scanning lines gate, and the opposing electrode op is formed on the upper layer side of the bank layer bank. Thereby, since the secondinterlayer insulating film 52 and the thick bank layer bank are interposed between the data line sig and the opposing electrode op, the capacitance that parasitizes the data line sig is significantly reduced. Therefore, the load on thedrive circuits - The bank layer bank (diagonally shaded region) is also formed in the periphery of the transparent substrate 10 (a region external to the display area 11). Accordingly, both the data
side drive circuit 3 and the scanningside drive circuit 4 are covered with the bank layer bank. Even if the opposing electrode op overlaps the region in which the drive circuits are formed, the bank layer bank is interposed between the wiring layer of the drive circuits and the opposing electrode op. Therefore, the parasitization of capacitance in thedrive circuits drive circuits - Further, in this embodiment, in the region in which the
pixel electrode 41 is formed, in a region in which theconduction control circuit 50 overlaps the interconnectingelectrode 35, the bank layer bank is also formed, and thereby a useless reactive current can be prevented from flowing. Therefore, the width of the common feeder con can be decreased by that amount. - Moreover, in this embodiment, since the bank layer bank is formed along the data lines sig and the scanning lines gate, any
pixel 7 is surrounded by the bank layer bank. Therefore, since the individualorganic semiconductor films 43 corresponding to R, G, and B can be formed in the predetermined region using an ink jet process, the full color activematrix display device 1 can be fabricated with high productivity. - Moreover, a discontinuities portion off is formed in the bank layer bank at the section corresponding to a section between the
adjacent pixels 7 in the extending direction of the scanning lines gate. A discontinuities portion off is also formed in the bank layer bank at each end of the data lines sig and the scanning lines gate in each of the extending directions. Further, the bank layer bank formed on the upper layer side of the scanningside drive circuit 4 and the dataside drive circuit 3 is provided with a discontinuities portion off at the position between the region in which the scanningside drive circuit 4 is formed and the region in which the dataside drive circuit 3 is formed. Accordingly, the opposing electrodes op are securely connected to each other through a planar section (discontinuities portion off) which does not have a step due to the bank layer bank, and disconnection does not occur. -
FIG. 7 is a block diagram which schematically shows the general layout of an active matrix display device.FIG. 8 is a plan view which shows a pixel included in the device shown inFIG. 7 .FIGS. 9(A) , 9(B), and 9(C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ ofFIG. 8 , respectively. Since this embodiment has basically the same configuration as that ofembodiment 1, the same reference numerals are used for the parts that are the same as those ofembodiment 1, and detailed description thereof will be omitted. - As shown in
FIG. 7 ,FIG. 8 , andFIGS. 9(A) , 9(B), and 9(C), in an activematrix display device 1 of this embodiment, a thick insulating film composed of a resist film (bank layer bank, a shaded region in which lines that slant to the left are drawn at a large pitch) is also provided along the data lines sig and the scanning lines gate, and the opposing electrode op is formed on the upper layer side of the bank layer bank. Thereby, since the secondinterlayer insulating film 52 and the thick bank layer bank are interposed between the data line sig and the opposing electrode op, the capacitance that parasitizes the data line sig is significantly reduced. Therefore, the load on thedrive circuits - The bank layer bank (diagonally shaded region) is also formed in the periphery of the transparent substrate 10 (a region external to the display area 11). Accordingly, both the data
side drive circuit 3 and the scanningside drive circuit 4 are covered with the bank layer bank. Even if the opposing electrode op overlaps the region in which the drive circuits are formed, the bank layer bank is interposed between the wiring layer of the drive circuits and the opposing electrode op. Therefore, the parasitization of capacitance in thedrive circuits drive circuits - Further, in this embodiment, in the region in which the
pixel electrode 41 is formed, in a region in which theconduction control circuit 50 overlaps the interconnectingelectrode 35, the bank layer bank is also formed, and thereby a useless reactive current can be prevented from flowing. Therefore, the width of the common feeder con can be decreased by that amount. - Moreover, in this embodiment, since the bank layer bank is formed along the data lines sig and the scanning lines gate, any
pixel 7 is surrounded by the bank layer bank. Therefore, since the individualorganic semiconductor films 43 corresponding to R, G, and B can be formed in the predetermined region using an ink jet process, the full color activematrix display device 1 can be fabricated with high productivity. - Moreover, a discontinuities portion off is formed in the bank layer bank at the section corresponding to a section between the
adjacent pixels 7 in the extending direction of the data lines sig. A discontinuities portion off is also formed in the bank layer bank at each end of the data lines sig and the scanning lines gate in each of the extending directions. Further, the bank layer bank formed on the upper layer side of the scanningside drive circuit 4 and the dataside drive circuit 3 is provided with a discontinuities portion off at the position between the region in which the scanningside drive circuit 4 is formed and the region in which the dataside drive circuit 3 is formed. Accordingly, the opposing electrodes op are securely connected to each other through a planar section (discontinuities portion off) which does not have a step due to the bank layer bank, and disconnection does not occur. -
FIG. 10 is a block diagram which schematically shows the general layout of an active matrix display device.FIG. 11 is a plan view which shows a pixel included in the device shown inFIG. 10 .FIGS. 12(A) , 12(B), and 12(C) are sectional views taken along the line A-A′, the line B-B′, and the line C-C′ ofFIG. 11 , respectively. Since this embodiment basically has the same configuration as that ofembodiment 1, the same reference numerals are used for the parts that are the same as those ofembodiment 1, and detailed description thereof will be omitted. - As shown in
FIG. 10 ,FIG. 11 , andFIGS. 12(A) , 12(B), and 12(C), in an activematrix display device 1 of this embodiment, a thick insulating film composed of a resist film (bank layer bank, a shaded region in which lines that slant to the left are drawn at a large pitch) is formed in a strip along the data lines sig, and the opposing electrode op is formed on the upper layer side of the bank layer bank. Thereby, since the secondinterlayer insulating film 52 and the thick bank layer bank are interposed between the data line sig and the opposing electrode op, the capacitance that parasitizes the data line sig is significantly reduced. Therefore, the load on thedrive circuits - The bank layer bank (diagonally shaded region) is also formed in the periphery of the transparent substrate 10 (a region external to the display area 11). Accordingly, both the data
side drive circuit 3 and the scanningside drive circuit 4 are covered with the bank layer bank. Even if the opposing electrode op overlaps the region in which the drive circuits are formed, the bank layer bank is interposed between the wiring layer of the drive circuits and the opposing electrode op. Therefore, the parasitization of capacitance in thedrive circuits drive circuits - Moreover, in this embodiment, since the bank layer bank is formed along the data lines sig, the individual
organic semiconductor films 43 corresponding to R, G, and B can be formed in a strip in the region delimited in a strip by the bank layer bank using an ink jet process. Thereby, the full color activematrix display device 1 can be fabricated with high productivity. - Moreover, the bank layer bank is provided with a discontinuities portion off at each end of the data lines sig in the extending direction. Thereby, the opposing electrode op of each
pixel 7 is connected to the opposing electrode op of theadjacent pixel 7 by climbing over the bank layer bank. By tracing the extending direction of the data lines sig, it is found that the opposing electrodes op of theindividual pixels 7 are connected to the adjacent row of pixels in the extending direction of the scanning lines gate, at the end of the data lines sig, through a discontinuities portion off (planar section which does not have a step due to the bank layer bank). Therefore, the opposing electrodes op of theindividual pixels 7 are connected to each other through the planar section which does not have a step due to the bank layer bank, and the opposing electrode op of anypixel 7 is not disconnected. - Additionally, when the bank layer bank (insulating film) is composed of an organic material such as a resist film or a polyimide film, a thick film can be easily formed. When the bank layer bank (insulating film) is composed of an inorganic material such as a silicon oxide film or silicon nitride film deposited by a CVD process or SOG process, an alteration in the
organic semiconductor film 43 can be prevented even if the insulating film is in contact with theorganic semiconductor film 43. - Besides the structure in which the storage capacitor cap is formed by the common feeder con, the storage capacitor cap may be formed by a capacity line formed in parallel to the scanning line gate.
- As descried above, in an active matrix display device in accordance with the present invention, since a thick insulating film is interposed between data lines and opposing electrodes, the parasitization of capacitance in the data lines can be prevented. Therefore, the load on a data side drive circuit can be decreased, resulting in lower consumption of electric power or faster display operation. Additionally, a discontinuities portion is formed at a predetermined position of the thick insulating film and the section is planar. Accordingly, the opposing electrodes in the individual regions are electrically connected to each other through a section formed in the planar section, and even if disconnection occurs at a step due to the insulating film, electrical connection is secured through the planar section corresponding to the discontinuities portion of the insulating film. Thereby, even if a thick insulating film is formed around an organic semiconductor film to suppress parasitic capacitance or the like, disconnection does not occur in the opposing electrodes formed on the upper layer of the insulating film, and thus display quality and reliability of the active matrix display device can be improved.
Claims (11)
1. A light emitting device, comprising:
a light emitting element including:
a first electrode;
a second electrode opposing the first electrode; and
an organic semiconductor film disposed between the first electrode and the second electrode, the organic semiconductor film emitting light in response to an electric current flowing between the first electrode and the second electrode;
a control transistor that controls the electric current;
an interconnecting electrode electrically connected to the control transistor, the interconnecting electrode being connected to the first electrode and formed so as not to overlap the organic semiconductor layer in the light emitting element in plan view; and
an electrode insulating film formed between the interconnecting electrode and the first electrode.
2. The light emitting device according to claim 1 ,
the interconnecting electrode being electrically connected to the first electrode by a contact hole formed in the electrode insulating film, and
the organic semiconductor film being formed so as not to overlap the contact hole in plan view.
3. The light emitting device according to claim 1 , further comprising:
an insulative bank layer disposed on the first electrode in a region that overlaps the interconnecting electrode in plan view.
4. The light emitting device according to claim 1 , further comprising:
a transistor insulating film, the control transistor including:
an island-like semiconductor film; and
a gate electrode formed on the island-shaped semiconductor film, the transistor insulating film formed between the gate electrode and the interconnecting electrode.
5. The light emitting device according to claim 3 , further comprising:
a scanning line;
a data line that crosses the scanning line;
an electrical supply line; and
an intersection transistor disposed at an intersection of the scanning line and the data line, the intersection transistor being electrically connected to each of the scanning line and the data line,
the control transistor being electrically connected to the electrical supply line and having a gate electrode, and
the gate electrode of the control transistor being electrically connected to the intersection transistor.
6. The light emitting device according to claim 2 , further comprising:
an insulative bank layer disposed on the first electrode in a region that overlaps the interconnecting electrode in plan view.
7. The light emitting device according to claim 2 ,
the control transistor including:
an island-like semiconductor film; and
a gate electrode formed on the island-shaped semiconductor film; and
a transistor insulating film formed between the gate electrode and the interconnecting electrode.
8. The light emitting device according to claim 3 , further comprising:
a transistor insulating film, the control transistor including:
an island-like semiconductor film; and
a gate electrode formed on the island-shaped semiconductor film, the transistor insulating film formed between the gate electrode and the interconnecting electrode.
9. The light emitting device according to claim 2 , further comprising:
a scanning line;
a data line that crosses the scanning line;
an electrical supply line that crosses the scanning line; and
an intersection transistor disposed at an intersection of the scanning line and the data line, the intersection transistor being electrically connected to each of the scanning line and the data line,
the control transistor being electrically connected to the electrical supply line, and being electrically connected to the intersection transistor.
10. The light emitting device according to claim 3 , further comprising:
a scanning line;
a data line that crosses the scanning line;
an electrical supply line; and
an intersection transistor disposed at an intersection of the scanning line and the data line, the intersection transistor being electrically connected to each of the scanning line and the data line,
the control transistor being electrically connected to the electrical supply line, and the gate electrode of the control transistor being electrically connected to the intersection transistor.
11. The light emitting device according to claim 4 , further comprising:
a scanning line;
a data line that crosses the scanning line;
an electrical supply line; and
an intersection transistor disposed at an intersection of the scanning line and the data line, the intersection transistor being electrically connected to each of the scanning line and the data line,
the control transistor being electrically connected to the electrical supply line, and the gate electrode of the control transistor being electrically connected to the intersection transistor.
Priority Applications (2)
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US12/606,219 US20100045577A1 (en) | 1997-08-21 | 2009-10-27 | Active matrix display device |
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JP22543397A JP3580092B2 (en) | 1997-08-21 | 1997-08-21 | Active matrix display |
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US09/284,774 US6373453B1 (en) | 1997-08-21 | 1998-08-18 | Active matrix display |
US09/993,565 US20020075207A1 (en) | 1997-08-21 | 2001-11-27 | Active matrix display device |
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US11/905,591 US20080036699A1 (en) | 1997-08-21 | 2007-10-02 | Active matrix display device |
US12/540,806 US20090303165A1 (en) | 1997-08-21 | 2009-08-13 | Active matrix display device |
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EP (2) | EP0940796B1 (en) |
JP (1) | JP3580092B2 (en) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US20080180421A1 (en) * | 1997-08-21 | 2008-07-31 | Seiko Epson Corporation | Active matrix display device |
US20090026946A1 (en) * | 2001-04-23 | 2009-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Display Device and Method of Manufacturing the Same |
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Families Citing this family (149)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001148291A (en) * | 1999-11-19 | 2001-05-29 | Sony Corp | Display device and its manufacturing method |
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US20010053559A1 (en) * | 2000-01-25 | 2001-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating display device |
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JP4748147B2 (en) * | 2000-02-25 | 2011-08-17 | セイコーエプソン株式会社 | Organic EL device |
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JP4214660B2 (en) * | 2000-04-11 | 2009-01-28 | ソニー株式会社 | Direct-view display device |
US6762735B2 (en) * | 2000-05-12 | 2004-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro luminescence display device and method of testing the same |
GB0014962D0 (en) * | 2000-06-20 | 2000-08-09 | Koninkl Philips Electronics Nv | Matrix array display devices with light sensing elements and associated storage capacitors |
US7180496B2 (en) | 2000-08-18 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method of driving the same |
TW514854B (en) * | 2000-08-23 | 2002-12-21 | Semiconductor Energy Lab | Portable information apparatus and method of driving the same |
US6864628B2 (en) * | 2000-08-28 | 2005-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound |
JP4646874B2 (en) * | 2000-09-18 | 2011-03-09 | 株式会社半導体エネルギー研究所 | Display device, mobile phone, digital camera and electronic device |
JP3695308B2 (en) * | 2000-10-27 | 2005-09-14 | 日本電気株式会社 | Active matrix organic EL display device and manufacturing method thereof |
EP1340261B1 (en) * | 2000-11-17 | 2010-07-21 | TPO Displays Corp. | Organic electroluminescent device and a method of manufacturing thereof |
CN1921136B (en) * | 2000-11-27 | 2012-05-09 | 精工爱普生株式会社 | Organic electroluminescent device, and manufacture method thereof |
US6965124B2 (en) | 2000-12-12 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method of fabricating the same |
KR100672628B1 (en) | 2000-12-29 | 2007-01-23 | 엘지.필립스 엘시디 주식회사 | Active Matrix Organic Electroluminescence Display Device |
JP2002208484A (en) * | 2001-01-12 | 2002-07-26 | Tohoku Pioneer Corp | Organic el display, and manufacturing method of the same |
US7248236B2 (en) | 2001-02-16 | 2007-07-24 | Ignis Innovation Inc. | Organic light emitting diode display having shield electrodes |
US7569849B2 (en) * | 2001-02-16 | 2009-08-04 | Ignis Innovation Inc. | Pixel driver circuit and pixel circuit having the pixel driver circuit |
SG102681A1 (en) * | 2001-02-19 | 2004-03-26 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
GB0107236D0 (en) * | 2001-03-22 | 2001-05-16 | Microemissive Displays Ltd | Method of creating an electroluminescent device |
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DE10117663B4 (en) | 2001-04-09 | 2004-09-02 | Samsung SDI Co., Ltd., Suwon | Process for the production of matrix arrangements based on various types of organic conductive materials |
JP2004527124A (en) | 2001-04-10 | 2004-09-02 | サーノフ コーポレイション | Method and apparatus for providing high performance active matrix pixels using organic thin film transistors |
JP2002329583A (en) * | 2001-05-02 | 2002-11-15 | Sony Corp | Organic electro-luminescence display device |
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US7109653B2 (en) * | 2002-01-15 | 2006-09-19 | Seiko Epson Corporation | Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element |
US7038377B2 (en) | 2002-01-16 | 2006-05-02 | Seiko Epson Corporation | Display device with a narrow frame |
JP4015044B2 (en) * | 2002-03-20 | 2007-11-28 | セイコーエプソン株式会社 | WIRING BOARD, ELECTRONIC DEVICE, AND ELECTRONIC DEVICE |
US7148508B2 (en) | 2002-03-20 | 2006-12-12 | Seiko Epson Corporation | Wiring substrate, electronic device, electro-optical device, and electronic apparatus |
KR100537611B1 (en) | 2002-04-10 | 2005-12-19 | 삼성에스디아이 주식회사 | Organic light emitting diode and method for producing thereof |
US7109650B2 (en) | 2002-07-08 | 2006-09-19 | Lg.Philips Lcd Co., Ltd. | Active matrix organic electroluminescent display device and method of fabricating the same |
KR100528910B1 (en) * | 2003-01-22 | 2005-11-15 | 삼성에스디아이 주식회사 | Polymer organic light emitting diode |
CA2419704A1 (en) | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
JP4531341B2 (en) | 2003-02-28 | 2010-08-25 | 株式会社半導体エネルギー研究所 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
US7123332B2 (en) * | 2003-05-12 | 2006-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, electronic device having the same, and semiconductor device |
US20040263072A1 (en) * | 2003-06-24 | 2004-12-30 | Joon-Young Park | Flat panel display |
US7317455B2 (en) * | 2003-09-10 | 2008-01-08 | Xerox Corporation | Bias voltage offset circuit |
CA2443206A1 (en) | 2003-09-23 | 2005-03-23 | Ignis Innovation Inc. | Amoled display backplanes - pixel driver circuits, array architecture, and external compensation |
JP4581408B2 (en) * | 2004-01-19 | 2010-11-17 | ソニー株式会社 | Display device |
US20050253803A1 (en) * | 2004-05-13 | 2005-11-17 | Xerox Corporation | Electric paper display with a thin film transistor active matrix and integrated addressing logic |
CA2472671A1 (en) | 2004-06-29 | 2005-12-29 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
JP2004326130A (en) * | 2004-07-30 | 2004-11-18 | Sony Corp | Tiling display device |
US7105375B2 (en) * | 2004-07-30 | 2006-09-12 | Xerox Corporation | Reverse printing |
KR100615235B1 (en) * | 2004-08-05 | 2006-08-25 | 삼성에스디아이 주식회사 | Organic thin film transistor groups and flat panel display device therewith |
KR20070032808A (en) * | 2004-08-11 | 2007-03-22 | 산요덴키가부시키가이샤 | Semiconductor element matrix array, manufacturing method and display panel |
US8350466B2 (en) | 2004-09-17 | 2013-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
US8772783B2 (en) * | 2004-10-14 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR101090250B1 (en) | 2004-10-15 | 2011-12-06 | 삼성전자주식회사 | Thin film transistor array panel using organic semiconductor and manufacturing method thereof |
US7288469B2 (en) * | 2004-12-03 | 2007-10-30 | Eastman Kodak Company | Methods and apparatuses for forming an article |
CA2490858A1 (en) | 2004-12-07 | 2006-06-07 | Ignis Innovation Inc. | Driving method for compensated voltage-programming of amoled displays |
US8063551B1 (en) * | 2004-12-29 | 2011-11-22 | E.I. Du Pont De Nemours And Company | Pixel intensity homogeneity in organic electronic devices |
KR100685811B1 (en) | 2005-01-04 | 2007-02-22 | 삼성에스디아이 주식회사 | Organic electro luminescence display and method for manufacturing the same |
CA2495726A1 (en) | 2005-01-28 | 2006-07-28 | Ignis Innovation Inc. | Locally referenced voltage programmed pixel for amoled displays |
JP4531596B2 (en) * | 2005-03-09 | 2010-08-25 | 株式会社半導体エネルギー研究所 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
KR101133767B1 (en) * | 2005-03-09 | 2012-04-09 | 삼성전자주식회사 | Organic thin film transistor array panel and method for manufacturing the same |
JP2006261240A (en) * | 2005-03-15 | 2006-09-28 | Seiko Epson Corp | Board for electronic device, manufacturing method thereof, display apparatus and electronic apparatus |
KR101187207B1 (en) * | 2005-08-04 | 2012-10-02 | 삼성디스플레이 주식회사 | Liquid crystal display |
JP5148086B2 (en) | 2005-08-18 | 2013-02-20 | 三星電子株式会社 | Organic thin film transistor display panel |
KR100703157B1 (en) * | 2005-09-15 | 2007-04-06 | 삼성전자주식회사 | Display device |
JP4640085B2 (en) * | 2005-09-30 | 2011-03-02 | カシオ計算機株式会社 | Display panel |
TWI460851B (en) | 2005-10-17 | 2014-11-11 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
TW200746022A (en) | 2006-04-19 | 2007-12-16 | Ignis Innovation Inc | Stable driving scheme for active matrix displays |
CN100389358C (en) * | 2006-06-15 | 2008-05-21 | 友达光电股份有限公司 | Picture element structure for preventing light leak |
JP2009021477A (en) * | 2007-07-13 | 2009-01-29 | Sony Corp | Semiconductor device, its manufacturing method, display device and its manufacturing method |
WO2009028126A1 (en) * | 2007-08-31 | 2009-03-05 | Sharp Kabushiki Kaisha | Organic el display and manufacturing method thereof |
JP2011501864A (en) * | 2007-10-15 | 2011-01-13 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Backplane structure for solution-processed electronic devices |
EP2225776A4 (en) | 2007-12-14 | 2013-01-16 | Du Pont | Backplane structures for electronic devices |
CA2617752A1 (en) | 2007-12-24 | 2009-06-24 | Ignis Innovation Inc | Power scavenging and harvesting for power efficient display |
JP2008198626A (en) * | 2008-05-23 | 2008-08-28 | Seiko Epson Corp | Organic el device |
JPWO2010070800A1 (en) | 2008-12-18 | 2012-05-24 | パナソニック株式会社 | Organic EL light emitting device |
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US8633873B2 (en) | 2009-11-12 | 2014-01-21 | Ignis Innovation Inc. | Stable fast programming scheme for displays |
US8530922B2 (en) | 2009-12-04 | 2013-09-10 | Panasonic Corporation | Organic EL device and method for manufacturing same |
JP4752968B2 (en) * | 2009-12-25 | 2011-08-17 | カシオ計算機株式会社 | Organic EL light emitting device |
US9041730B2 (en) | 2010-02-12 | 2015-05-26 | Dexcom, Inc. | Receivers for analyzing and displaying sensor data |
KR101839533B1 (en) * | 2010-12-28 | 2018-03-19 | 삼성디스플레이 주식회사 | Organic light emitting display device, driving method for the same, and method for manufacturing the same |
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US9606607B2 (en) | 2011-05-17 | 2017-03-28 | Ignis Innovation Inc. | Systems and methods for display systems with dynamic power control |
JP2011187459A (en) * | 2011-06-29 | 2011-09-22 | Semiconductor Energy Lab Co Ltd | Light emitting device |
US9070775B2 (en) | 2011-08-03 | 2015-06-30 | Ignis Innovations Inc. | Thin film transistor |
US8901579B2 (en) | 2011-08-03 | 2014-12-02 | Ignis Innovation Inc. | Organic light emitting diode and method of manufacturing |
US10089924B2 (en) | 2011-11-29 | 2018-10-02 | Ignis Innovation Inc. | Structural and low-frequency non-uniformity compensation |
US9385169B2 (en) | 2011-11-29 | 2016-07-05 | Ignis Innovation Inc. | Multi-functional active matrix organic light-emitting diode display |
JP5600704B2 (en) * | 2012-04-17 | 2014-10-01 | 株式会社半導体エネルギー研究所 | Light emitting device |
JP6302186B2 (en) | 2012-08-01 | 2018-03-28 | 株式会社半導体エネルギー研究所 | Display device |
JP5288662B2 (en) * | 2012-08-07 | 2013-09-11 | 株式会社半導体エネルギー研究所 | Display device |
JP6076683B2 (en) | 2012-10-17 | 2017-02-08 | 株式会社半導体エネルギー研究所 | Light emitting device |
JP6204012B2 (en) | 2012-10-17 | 2017-09-27 | 株式会社半導体エネルギー研究所 | Light emitting device |
JP6155020B2 (en) | 2012-12-21 | 2017-06-28 | 株式会社半導体エネルギー研究所 | Light emitting device and manufacturing method thereof |
JP5564556B2 (en) * | 2012-12-26 | 2014-07-30 | 株式会社半導体エネルギー研究所 | EL display device |
JP6216125B2 (en) | 2013-02-12 | 2017-10-18 | 株式会社半導体エネルギー研究所 | Light emitting device |
JP6104649B2 (en) | 2013-03-08 | 2017-03-29 | 株式会社半導体エネルギー研究所 | Light emitting device |
US9721505B2 (en) | 2013-03-08 | 2017-08-01 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
WO2014140992A1 (en) | 2013-03-15 | 2014-09-18 | Ignis Innovation Inc. | Dynamic adjustment of touch resolutions on an amoled display |
US9502653B2 (en) | 2013-12-25 | 2016-11-22 | Ignis Innovation Inc. | Electrode contacts |
US10997901B2 (en) | 2014-02-28 | 2021-05-04 | Ignis Innovation Inc. | Display system |
US10176752B2 (en) | 2014-03-24 | 2019-01-08 | Ignis Innovation Inc. | Integrated gate driver |
JPWO2015166857A1 (en) * | 2014-04-28 | 2017-04-20 | シャープ株式会社 | Active matrix substrate and display device including the same |
CA2872563A1 (en) | 2014-11-28 | 2016-05-28 | Ignis Innovation Inc. | High pixel density array architecture |
KR102490881B1 (en) * | 2014-12-26 | 2023-01-25 | 삼성디스플레이 주식회사 | Organic light emitting display device and manufacturing method of the same |
US10657895B2 (en) | 2015-07-24 | 2020-05-19 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
US10373554B2 (en) | 2015-07-24 | 2019-08-06 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
CA2898282A1 (en) | 2015-07-24 | 2017-01-24 | Ignis Innovation Inc. | Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays |
KR102536628B1 (en) * | 2015-08-24 | 2023-05-26 | 엘지디스플레이 주식회사 | Transparent display device |
CA2909813A1 (en) | 2015-10-26 | 2017-04-26 | Ignis Innovation Inc | High ppi pattern orientation |
KR102375685B1 (en) | 2016-02-02 | 2022-03-18 | 삼성디스플레이 주식회사 | Flexible display apparatus |
KR102605957B1 (en) * | 2016-02-23 | 2023-11-27 | 삼성디스플레이 주식회사 | Organic light emitting display device and method of manufacturing an organic light emitting display device |
DE102017222059A1 (en) | 2016-12-06 | 2018-06-07 | Ignis Innovation Inc. | Pixel circuits for reducing hysteresis |
US10714018B2 (en) | 2017-05-17 | 2020-07-14 | Ignis Innovation Inc. | System and method for loading image correction data for displays |
KR102525822B1 (en) | 2017-07-06 | 2023-04-26 | 삼성디스플레이 주식회사 | Display device and manufacturing method thereof |
US11025899B2 (en) | 2017-08-11 | 2021-06-01 | Ignis Innovation Inc. | Optical correction systems and methods for correcting non-uniformity of emissive display devices |
KR102577043B1 (en) * | 2017-12-11 | 2023-09-08 | 엘지디스플레이 주식회사 | Electroluminescent display device |
KR102486552B1 (en) | 2018-01-15 | 2023-01-10 | 삼성디스플레이 주식회사 | Display device and method for manufacturing the display device |
US10971078B2 (en) | 2018-02-12 | 2021-04-06 | Ignis Innovation Inc. | Pixel measurement through data line |
US11264437B2 (en) | 2018-05-14 | 2022-03-01 | Samsung Display Co., Ltd. | Display devices |
KR102537444B1 (en) | 2018-05-31 | 2023-05-30 | 삼성디스플레이 주식회사 | Display apparatus |
JP7157691B2 (en) * | 2019-03-20 | 2022-10-20 | 株式会社東芝 | semiconductor equipment |
KR20210033586A (en) | 2019-09-18 | 2021-03-29 | 삼성디스플레이 주식회사 | Display apparatus |
CN111564120B (en) * | 2020-05-28 | 2022-06-24 | 京东方科技集团股份有限公司 | Display panel and display device |
Citations (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4006383A (en) * | 1975-11-28 | 1977-02-01 | Westinghouse Electric Corporation | Electroluminescent display panel with enlarged active display areas |
US4087793A (en) * | 1976-10-28 | 1978-05-02 | Motorola, Inc. | Digital electronic control and switching arrangement |
US4087792A (en) * | 1977-03-03 | 1978-05-02 | Westinghouse Electric Corp. | Electro-optic display system |
US4135959A (en) * | 1975-11-21 | 1979-01-23 | Westinghouse Electric Corp. | Method of manufacture of flat panel display device |
US4636038A (en) * | 1983-07-09 | 1987-01-13 | Canon Kabushiki Kaisha | Electric circuit member and liquid crystal display device using said member |
US4738514A (en) * | 1986-01-16 | 1988-04-19 | Rca Corporation | Crystal variation compensation circuit for liquid crystal displays |
US4820222A (en) * | 1986-12-31 | 1989-04-11 | Alphasil, Inc. | Method of manufacturing flat panel backplanes including improved testing and yields thereof and displays made thereby |
US5014104A (en) * | 1988-01-14 | 1991-05-07 | Fujitsu Limited | Semiconductor integrated circuit having CMOS inverters |
US5071055A (en) * | 1984-12-18 | 1991-12-10 | Thomson Csf | Travelling wave tube with a helix-tube delay line attached to a sleeve through the use of boron nitride dielectric supports |
US5177406A (en) * | 1991-04-29 | 1993-01-05 | General Motors Corporation | Active matrix vacuum fluorescent display with compensation for variable phosphor efficiency |
US5231329A (en) * | 1990-07-16 | 1993-07-27 | Nippon Oil Co., Ltd. | Organic thin film electroluminescent device |
US5299157A (en) * | 1990-07-09 | 1994-03-29 | Hitachi, Ltd. | Semiconductor memories with serial sensing scheme |
US5302966A (en) * | 1992-06-02 | 1994-04-12 | David Sarnoff Research Center, Inc. | Active matrix electroluminescent display and method of operation |
US5479068A (en) * | 1993-03-08 | 1995-12-26 | Hitachi, Ltd. | Color cathode ray tube |
US5506375A (en) * | 1993-02-22 | 1996-04-09 | Wacom Co., Ltd. | Circuit board for coordinate detecting apparatus with noise suppression |
US5525867A (en) * | 1994-08-05 | 1996-06-11 | Hughes Aircraft Company | Electroluminescent display with integrated drive circuitry |
US5587329A (en) * | 1994-08-24 | 1996-12-24 | David Sarnoff Research Center, Inc. | Method for fabricating a switching transistor having a capacitive network proximate a drift region |
US5631753A (en) * | 1991-06-28 | 1997-05-20 | Dai Nippon Printing Co., Ltd. | Black matrix base board and manufacturing method therefor, and liquid crystal display panel and manufacturing method therefor |
US5640067A (en) * | 1995-03-24 | 1997-06-17 | Tdk Corporation | Thin film transistor, organic electroluminescence display device and manufacturing method of the same |
US5641974A (en) * | 1995-06-06 | 1997-06-24 | Ois Optical Imaging Systems, Inc. | LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween |
US5654811A (en) * | 1992-09-11 | 1997-08-05 | Kopin Corporation | Color filter system for display panels |
US5670994A (en) * | 1993-01-27 | 1997-09-23 | Sharp Kabushiki Kaisha | Assembly structure of a flat type device including a panel having electrode terminals disposed on a peripheral portion |
US5670792A (en) * | 1993-10-12 | 1997-09-23 | Nec Corporation | Current-controlled luminous element array and method for producing the same |
US5689279A (en) * | 1994-03-24 | 1997-11-18 | Motorola | Integrated electro-optical package |
US5726678A (en) * | 1995-03-06 | 1998-03-10 | Thomson Consumer Electronics, S.A. | Signal disturbance reduction arrangement for a liquid crystal display |
US5742129A (en) * | 1995-02-21 | 1998-04-21 | Pioneer Electronic Corporation | Organic electroluminescent display panel with projecting ramparts and method for manufacturing the same |
US5748165A (en) * | 1993-12-24 | 1998-05-05 | Sharp Kabushiki Kaisha | Image display device with plural data driving circuits for driving the display at different voltage magnitudes and polarity |
US5801673A (en) * | 1993-08-30 | 1998-09-01 | Sharp Kabushiki Kaisha | Liquid crystal display device and method for driving the same |
US5804917A (en) * | 1995-01-31 | 1998-09-08 | Futaba Denshi Kogyo K.K. | Organic electroluminescent display device and method for manufacturing same |
US5808595A (en) * | 1995-06-29 | 1998-09-15 | Sharp Kabushiki Kaisha | Thin-film transistor circuit and image display |
US5812188A (en) * | 1996-07-12 | 1998-09-22 | Adair; Edwin L. | Sterile encapsulated endoscopic video monitor |
US5828428A (en) * | 1995-01-27 | 1998-10-27 | Samsung Electronics Co., Ltd. | Resistive circuit for a thin film transistor liquid crystal display and a method for manufacturing the same |
US5854616A (en) * | 1994-06-24 | 1998-12-29 | Hitach, Ltd. | Active matrix type liquid crystal display system and driving method therefor |
US5877830A (en) * | 1995-09-13 | 1999-03-02 | Sharp Kabushiki Kaisha | Liquid crystal display device having a light blocking layer in the periphery |
US5887329A (en) * | 1992-12-02 | 1999-03-30 | Novopress Gmbh Pressen Und Presswerkzeuge & Co. Kg | Press tool |
US5903246A (en) * | 1997-04-04 | 1999-05-11 | Sarnoff Corporation | Circuit and method for driving an organic light emitting diode (O-LED) display |
US5907313A (en) * | 1995-11-06 | 1999-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Matrix-type display device |
US5909081A (en) * | 1995-02-06 | 1999-06-01 | Idemitsu Kosan Co., Ltd. | Multi-color light emission apparatus with organic electroluminescent device |
US5973449A (en) * | 1995-07-31 | 1999-10-26 | Casio Computer Co., Ltd. | Display device with specific electrode structure and composition |
US5977562A (en) * | 1995-11-14 | 1999-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
US6022766A (en) * | 1995-09-29 | 2000-02-08 | International Business Machines, Inc. | Semiconductor structure incorporating thin film transistors, and methods for its manufacture |
US6055034A (en) * | 1996-06-25 | 2000-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display panel |
US6057647A (en) * | 1998-02-24 | 2000-05-02 | Casio Computer Co., Ltd. | Light emitting device used for display device |
US6060333A (en) * | 1989-01-10 | 2000-05-09 | Mitsubishi Denki Kabushiki Kaisha | Method of making a liquid crystal display including a field effect transistor |
US6091195A (en) * | 1997-02-03 | 2000-07-18 | The Trustees Of Princeton University | Displays having mesa pixel configuration |
US6123876A (en) * | 1995-04-04 | 2000-09-26 | Canon Kabushiki Kaisha | Metal-containing composition for forming electron-emitting device |
US6133163A (en) * | 1994-07-29 | 2000-10-17 | Texas Instruments Incorporated | Method for forming a semiconductor multilayer interconnect device using SOG and polyimide |
US6137552A (en) * | 1996-05-22 | 2000-10-24 | Nec Corporation | Liquid crystal panel having a high aperture ratio and light-shielded channels |
US6147451A (en) * | 1997-08-08 | 2000-11-14 | Sanyo Electric Co., Ltd. | Organic electrominiscent display device |
US6150668A (en) * | 1998-05-29 | 2000-11-21 | Lucent Technologies Inc. | Thin-film transistor monolithically integrated with an organic light-emitting diode |
US6160272A (en) * | 1997-03-07 | 2000-12-12 | Tdk Corporation | Self-light-emitting apparatus and semiconductor device used in the apparatus |
US6175395B1 (en) * | 1995-10-12 | 2001-01-16 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device having light shielding layer forms over a TFT and form of an acrylic resin having carbon black particles with diameter of 1mm |
US6188112B1 (en) * | 1993-06-30 | 2001-02-13 | Stmicroelectronics, Inc. | High impedance load for integrated circuit devices |
US6229508B1 (en) * | 1997-09-29 | 2001-05-08 | Sarnoff Corporation | Active matrix light emitting diode pixel structure and concomitant method |
US6284072B1 (en) * | 1996-11-09 | 2001-09-04 | Epigem Limited | Multifunctional microstructures and preparation thereof |
US6295043B1 (en) * | 1994-06-06 | 2001-09-25 | Canon Kabushiki Kaisha | Display and its driving method |
US20020024493A1 (en) * | 1997-02-17 | 2002-02-28 | Tokuroh Ozawa | Display apparatus |
US6359606B1 (en) * | 1997-08-29 | 2002-03-19 | Seiko Epson Corporation | Active matrix display |
US6542137B2 (en) * | 1996-09-26 | 2003-04-01 | Seiko Epson Corporation | Display device |
US6545424B2 (en) * | 1997-07-02 | 2003-04-08 | Seiko Epson Corporation | Display device |
US20030151568A1 (en) * | 1997-07-02 | 2003-08-14 | Seiko Epson Corporation | Display apparatus |
US6618023B2 (en) * | 2001-07-02 | 2003-09-09 | Samsung Electro-Mechanics Co., Ltd. | Chip antenna |
US6630784B2 (en) * | 1998-02-27 | 2003-10-07 | Sanyo Electric Co., Ltd. | Electroluminescence display apparatus having an opaque anode electrode and manufacturing method thereof |
US20080036699A1 (en) * | 1997-08-21 | 2008-02-14 | Seiko Epson Corporation | Active matrix display device |
US20080180421A1 (en) * | 1997-08-21 | 2008-07-31 | Seiko Epson Corporation | Active matrix display device |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088146B2 (en) * | 1988-08-31 | 1996-01-29 | 松下電器産業株式会社 | Color EL display device and manufacturing method thereof |
ATE162907T1 (en) * | 1989-10-18 | 1998-02-15 | Noritake Co Ltd | PLASMA DISPLAY PANEL AND METHOD OF PRODUCING THE SAME |
US5256562A (en) * | 1990-12-31 | 1993-10-26 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US5317432A (en) * | 1991-09-04 | 1994-05-31 | Sony Corporation | Liquid crystal display device with a capacitor and a thin film transistor in a trench for each pixel |
JP2784615B2 (en) * | 1991-10-16 | 1998-08-06 | 株式会社半導体エネルギー研究所 | Electro-optical display device and driving method thereof |
SG81187A1 (en) * | 1991-11-29 | 2001-06-19 | Seiko Epson Corp | Liquid crystal display device and manufacturing method therefor |
US5627557A (en) * | 1992-08-20 | 1997-05-06 | Sharp Kabushiki Kaisha | Display apparatus |
JP2812851B2 (en) * | 1993-03-24 | 1998-10-22 | シャープ株式会社 | Reflective liquid crystal display |
US5701055A (en) * | 1994-03-13 | 1997-12-23 | Pioneer Electronic Corporation | Organic electoluminescent display panel and method for manufacturing the same |
US5747928A (en) * | 1994-10-07 | 1998-05-05 | Iowa State University Research Foundation, Inc. | Flexible panel display having thin film transistors driving polymer light-emitting diodes |
US5550066A (en) * | 1994-12-14 | 1996-08-27 | Eastman Kodak Company | Method of fabricating a TFT-EL pixel |
US5684365A (en) * | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
US6115014A (en) * | 1994-12-26 | 2000-09-05 | Casio Computer Co., Ltd. | Liquid crystal display by means of time-division color mixing and voltage driving methods using birefringence |
JPH09161970A (en) | 1995-12-08 | 1997-06-20 | Stanley Electric Co Ltd | Organic led element of dot matrix type |
US6002463A (en) * | 1996-01-30 | 1999-12-14 | Seiko Epson Corporation | Liquid crystal device having a light blocking layer provided over an alignment layer, method for making the same |
EP0884930B1 (en) * | 1996-02-26 | 2010-09-29 | Idemitsu Kosan Company Limited | Organic electroluminescent element and method for manufacturing the same |
TW374860B (en) * | 1996-04-30 | 1999-11-21 | Matsushita Electric Ind Co Ltd | Active matrix liquid crystal display for projection |
KR100479000B1 (en) * | 1996-05-15 | 2005-08-01 | 세이코 엡슨 가부시키가이샤 | Manufacturing method of thin film device, liquid crystal panel and electronic device and thin film device |
JP3992797B2 (en) * | 1996-09-25 | 2007-10-17 | 東芝松下ディスプレイテクノロジー株式会社 | Liquid crystal display |
DE69739633D1 (en) * | 1996-11-28 | 2009-12-10 | Casio Computer Co Ltd | display device |
JP3392672B2 (en) * | 1996-11-29 | 2003-03-31 | 三洋電機株式会社 | Display device |
US6462722B1 (en) * | 1997-02-17 | 2002-10-08 | Seiko Epson Corporation | Current-driven light-emitting display apparatus and method of producing the same |
JP3705264B2 (en) * | 2001-12-18 | 2005-10-12 | セイコーエプソン株式会社 | Display device and electronic device |
-
1997
- 1997-08-21 JP JP22543397A patent/JP3580092B2/en not_active Expired - Lifetime
-
1998
- 1998-08-18 WO PCT/JP1998/003663 patent/WO1999010861A1/en active IP Right Grant
- 1998-08-18 DE DE69829357T patent/DE69829357T2/en not_active Expired - Lifetime
- 1998-08-18 EP EP98937856A patent/EP0940796B1/en not_active Expired - Lifetime
- 1998-08-18 EP EP04078522A patent/EP1524696A3/en not_active Withdrawn
- 1998-08-18 KR KR10-1999-7003229A patent/KR100509239B1/en not_active IP Right Cessation
- 1998-08-18 CN CNB988015196A patent/CN1146843C/en not_active Expired - Lifetime
- 1998-08-18 US US09/284,774 patent/US6373453B1/en not_active Expired - Lifetime
- 1998-08-20 TW TW087113722A patent/TW430776B/en not_active IP Right Cessation
-
2001
- 2001-11-27 US US09/993,565 patent/US20020075207A1/en not_active Abandoned
-
2003
- 2003-05-21 US US10/442,057 patent/US20030206144A1/en not_active Abandoned
-
2007
- 2007-10-02 US US11/905,591 patent/US20080036699A1/en not_active Abandoned
-
2009
- 2009-08-13 US US12/540,806 patent/US20090303165A1/en not_active Abandoned
- 2009-10-27 US US12/606,219 patent/US20100045577A1/en not_active Abandoned
Patent Citations (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4135959A (en) * | 1975-11-21 | 1979-01-23 | Westinghouse Electric Corp. | Method of manufacture of flat panel display device |
US4006383A (en) * | 1975-11-28 | 1977-02-01 | Westinghouse Electric Corporation | Electroluminescent display panel with enlarged active display areas |
US4087793A (en) * | 1976-10-28 | 1978-05-02 | Motorola, Inc. | Digital electronic control and switching arrangement |
US4087792A (en) * | 1977-03-03 | 1978-05-02 | Westinghouse Electric Corp. | Electro-optic display system |
US4636038A (en) * | 1983-07-09 | 1987-01-13 | Canon Kabushiki Kaisha | Electric circuit member and liquid crystal display device using said member |
US5071055A (en) * | 1984-12-18 | 1991-12-10 | Thomson Csf | Travelling wave tube with a helix-tube delay line attached to a sleeve through the use of boron nitride dielectric supports |
US4738514A (en) * | 1986-01-16 | 1988-04-19 | Rca Corporation | Crystal variation compensation circuit for liquid crystal displays |
US4820222A (en) * | 1986-12-31 | 1989-04-11 | Alphasil, Inc. | Method of manufacturing flat panel backplanes including improved testing and yields thereof and displays made thereby |
US5014104A (en) * | 1988-01-14 | 1991-05-07 | Fujitsu Limited | Semiconductor integrated circuit having CMOS inverters |
US6060333A (en) * | 1989-01-10 | 2000-05-09 | Mitsubishi Denki Kabushiki Kaisha | Method of making a liquid crystal display including a field effect transistor |
US5299157A (en) * | 1990-07-09 | 1994-03-29 | Hitachi, Ltd. | Semiconductor memories with serial sensing scheme |
US5231329A (en) * | 1990-07-16 | 1993-07-27 | Nippon Oil Co., Ltd. | Organic thin film electroluminescent device |
US5177406A (en) * | 1991-04-29 | 1993-01-05 | General Motors Corporation | Active matrix vacuum fluorescent display with compensation for variable phosphor efficiency |
US5631753A (en) * | 1991-06-28 | 1997-05-20 | Dai Nippon Printing Co., Ltd. | Black matrix base board and manufacturing method therefor, and liquid crystal display panel and manufacturing method therefor |
US5302966A (en) * | 1992-06-02 | 1994-04-12 | David Sarnoff Research Center, Inc. | Active matrix electroluminescent display and method of operation |
US5654811A (en) * | 1992-09-11 | 1997-08-05 | Kopin Corporation | Color filter system for display panels |
US5887329A (en) * | 1992-12-02 | 1999-03-30 | Novopress Gmbh Pressen Und Presswerkzeuge & Co. Kg | Press tool |
US5670994A (en) * | 1993-01-27 | 1997-09-23 | Sharp Kabushiki Kaisha | Assembly structure of a flat type device including a panel having electrode terminals disposed on a peripheral portion |
US5506375A (en) * | 1993-02-22 | 1996-04-09 | Wacom Co., Ltd. | Circuit board for coordinate detecting apparatus with noise suppression |
US5479068A (en) * | 1993-03-08 | 1995-12-26 | Hitachi, Ltd. | Color cathode ray tube |
US6188112B1 (en) * | 1993-06-30 | 2001-02-13 | Stmicroelectronics, Inc. | High impedance load for integrated circuit devices |
US5801673A (en) * | 1993-08-30 | 1998-09-01 | Sharp Kabushiki Kaisha | Liquid crystal display device and method for driving the same |
US5670792A (en) * | 1993-10-12 | 1997-09-23 | Nec Corporation | Current-controlled luminous element array and method for producing the same |
US5748165A (en) * | 1993-12-24 | 1998-05-05 | Sharp Kabushiki Kaisha | Image display device with plural data driving circuits for driving the display at different voltage magnitudes and polarity |
US5689279A (en) * | 1994-03-24 | 1997-11-18 | Motorola | Integrated electro-optical package |
US6295043B1 (en) * | 1994-06-06 | 2001-09-25 | Canon Kabushiki Kaisha | Display and its driving method |
US5854616A (en) * | 1994-06-24 | 1998-12-29 | Hitach, Ltd. | Active matrix type liquid crystal display system and driving method therefor |
US6133163A (en) * | 1994-07-29 | 2000-10-17 | Texas Instruments Incorporated | Method for forming a semiconductor multilayer interconnect device using SOG and polyimide |
US5525867A (en) * | 1994-08-05 | 1996-06-11 | Hughes Aircraft Company | Electroluminescent display with integrated drive circuitry |
US5587329A (en) * | 1994-08-24 | 1996-12-24 | David Sarnoff Research Center, Inc. | Method for fabricating a switching transistor having a capacitive network proximate a drift region |
US5828428A (en) * | 1995-01-27 | 1998-10-27 | Samsung Electronics Co., Ltd. | Resistive circuit for a thin film transistor liquid crystal display and a method for manufacturing the same |
US5804917A (en) * | 1995-01-31 | 1998-09-08 | Futaba Denshi Kogyo K.K. | Organic electroluminescent display device and method for manufacturing same |
US5909081A (en) * | 1995-02-06 | 1999-06-01 | Idemitsu Kosan Co., Ltd. | Multi-color light emission apparatus with organic electroluminescent device |
US5742129A (en) * | 1995-02-21 | 1998-04-21 | Pioneer Electronic Corporation | Organic electroluminescent display panel with projecting ramparts and method for manufacturing the same |
US5726678A (en) * | 1995-03-06 | 1998-03-10 | Thomson Consumer Electronics, S.A. | Signal disturbance reduction arrangement for a liquid crystal display |
US5640067A (en) * | 1995-03-24 | 1997-06-17 | Tdk Corporation | Thin film transistor, organic electroluminescence display device and manufacturing method of the same |
US6123876A (en) * | 1995-04-04 | 2000-09-26 | Canon Kabushiki Kaisha | Metal-containing composition for forming electron-emitting device |
US5641974A (en) * | 1995-06-06 | 1997-06-24 | Ois Optical Imaging Systems, Inc. | LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween |
US5808595A (en) * | 1995-06-29 | 1998-09-15 | Sharp Kabushiki Kaisha | Thin-film transistor circuit and image display |
US5973449A (en) * | 1995-07-31 | 1999-10-26 | Casio Computer Co., Ltd. | Display device with specific electrode structure and composition |
US5877830A (en) * | 1995-09-13 | 1999-03-02 | Sharp Kabushiki Kaisha | Liquid crystal display device having a light blocking layer in the periphery |
US6022766A (en) * | 1995-09-29 | 2000-02-08 | International Business Machines, Inc. | Semiconductor structure incorporating thin film transistors, and methods for its manufacture |
US6175395B1 (en) * | 1995-10-12 | 2001-01-16 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device having light shielding layer forms over a TFT and form of an acrylic resin having carbon black particles with diameter of 1mm |
US5907313A (en) * | 1995-11-06 | 1999-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Matrix-type display device |
US5977562A (en) * | 1995-11-14 | 1999-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
US6137552A (en) * | 1996-05-22 | 2000-10-24 | Nec Corporation | Liquid crystal panel having a high aperture ratio and light-shielded channels |
US6055034A (en) * | 1996-06-25 | 2000-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display panel |
US5812188A (en) * | 1996-07-12 | 1998-09-22 | Adair; Edwin L. | Sterile encapsulated endoscopic video monitor |
US6542137B2 (en) * | 1996-09-26 | 2003-04-01 | Seiko Epson Corporation | Display device |
US6284072B1 (en) * | 1996-11-09 | 2001-09-04 | Epigem Limited | Multifunctional microstructures and preparation thereof |
US6091195A (en) * | 1997-02-03 | 2000-07-18 | The Trustees Of Princeton University | Displays having mesa pixel configuration |
US20020024493A1 (en) * | 1997-02-17 | 2002-02-28 | Tokuroh Ozawa | Display apparatus |
US6160272A (en) * | 1997-03-07 | 2000-12-12 | Tdk Corporation | Self-light-emitting apparatus and semiconductor device used in the apparatus |
US5903246A (en) * | 1997-04-04 | 1999-05-11 | Sarnoff Corporation | Circuit and method for driving an organic light emitting diode (O-LED) display |
US20080165174A1 (en) * | 1997-07-02 | 2008-07-10 | Seiko Epson Corporation | Display apparatus |
US7460094B2 (en) * | 1997-07-02 | 2008-12-02 | Seiko Epson Corporation | Display apparatus |
US20080198152A1 (en) * | 1997-07-02 | 2008-08-21 | Seiko Epson Corporation | Display apparatus |
US20080158209A1 (en) * | 1997-07-02 | 2008-07-03 | Seiko Epson Corporation | Display apparatus |
US20030193493A1 (en) * | 1997-07-02 | 2003-10-16 | Seiko Epson Corporation | Display apparatus |
US6545424B2 (en) * | 1997-07-02 | 2003-04-08 | Seiko Epson Corporation | Display device |
US20030151568A1 (en) * | 1997-07-02 | 2003-08-14 | Seiko Epson Corporation | Display apparatus |
US6147451A (en) * | 1997-08-08 | 2000-11-14 | Sanyo Electric Co., Ltd. | Organic electrominiscent display device |
US20080036699A1 (en) * | 1997-08-21 | 2008-02-14 | Seiko Epson Corporation | Active matrix display device |
US20080180421A1 (en) * | 1997-08-21 | 2008-07-31 | Seiko Epson Corporation | Active matrix display device |
US20100045577A1 (en) * | 1997-08-21 | 2010-02-25 | Seiko Epson Corporation | Active matrix display device |
US6359606B1 (en) * | 1997-08-29 | 2002-03-19 | Seiko Epson Corporation | Active matrix display |
US6229508B1 (en) * | 1997-09-29 | 2001-05-08 | Sarnoff Corporation | Active matrix light emitting diode pixel structure and concomitant method |
US6057647A (en) * | 1998-02-24 | 2000-05-02 | Casio Computer Co., Ltd. | Light emitting device used for display device |
US6630784B2 (en) * | 1998-02-27 | 2003-10-07 | Sanyo Electric Co., Ltd. | Electroluminescence display apparatus having an opaque anode electrode and manufacturing method thereof |
US6150668A (en) * | 1998-05-29 | 2000-11-21 | Lucent Technologies Inc. | Thin-film transistor monolithically integrated with an organic light-emitting diode |
US6618023B2 (en) * | 2001-07-02 | 2003-09-09 | Samsung Electro-Mechanics Co., Ltd. | Chip antenna |
Non-Patent Citations (1)
Title |
---|
Dictionary.com, "adjacent," in Dictionary.com Unabridged. Source location: Random House, Inc. http://dictionary.reference.com/browse/adjacent, 18 November 2011, page 1. * |
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Also Published As
Publication number | Publication date |
---|---|
DE69829357D1 (en) | 2005-04-21 |
CN1146843C (en) | 2004-04-21 |
US20080036699A1 (en) | 2008-02-14 |
DE69829357T2 (en) | 2005-07-28 |
CN1242855A (en) | 2000-01-26 |
TW430776B (en) | 2001-04-21 |
WO1999010861A1 (en) | 1999-03-04 |
EP1524696A3 (en) | 2005-08-10 |
KR100509239B1 (en) | 2005-08-22 |
EP0940796B1 (en) | 2005-03-16 |
EP0940796A1 (en) | 1999-09-08 |
US20020075207A1 (en) | 2002-06-20 |
US20030206144A1 (en) | 2003-11-06 |
EP1524696A2 (en) | 2005-04-20 |
US20100045577A1 (en) | 2010-02-25 |
EP0940796A4 (en) | 2002-08-21 |
US6373453B1 (en) | 2002-04-16 |
JP3580092B2 (en) | 2004-10-20 |
JPH1165487A (en) | 1999-03-05 |
KR20000068764A (en) | 2000-11-25 |
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