US20090090531A1 - Micromechanical component having a cap having a closure - Google Patents
Micromechanical component having a cap having a closure Download PDFInfo
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- US20090090531A1 US20090090531A1 US12/158,483 US15848306A US2009090531A1 US 20090090531 A1 US20090090531 A1 US 20090090531A1 US 15848306 A US15848306 A US 15848306A US 2009090531 A1 US2009090531 A1 US 2009090531A1
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- cap
- cavity
- diaphragm
- access opening
- layer
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- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 230000009975 flexible effect Effects 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
Definitions
- the present invention relates to a micromechanical component having a substrate, having a cavity and having a cap that bounds the cavity.
- the cap has an access opening to the cavity.
- Micromechanical components are equipped with a cap for special application purposes or just in order to protect them.
- Glass frit bonding or anodic bonding, inter alia, are conventional for fastening a cap on the component.
- European Patent No. EP 1 274 648 B1 describes a packaging using thin layers, a so-called SMM encapsulation (SMM—surface micromechanics).
- SMM surface micromechanics
- the basis of this technology is a perforated layer made of epitaxial polysilicon over a cavity that contains a micromechanical functional element. The perforations allow the cavity to be accessed from the outside during the manufacture of the micromechanical component.
- the present invention relates to a manufacturing method for a micromechanical component having a substrate, having a cavity and having a cap that bounds the cavity.
- the cap has an access opening to the cavity.
- a diaphragm is manufactured from suitably structured layers for closing the access opening.
- it is possible to create a cap over a micromechanical component by depositing and structuring a diaphragm layer, a sacrificial layer, an etch stop layer and a cap layer, which cap offers, after an etching process, an access that is mechanically closable by a diaphragm located underneath the actual cap.
- An advantageous refinement of the example manufacturing method according to the present invention provides for the creation of a cap having an inner diaphragm by manufacturing an additional etch stop layer and an additional sacrificial layer in front of the above-mentioned layers.
- a diaphragm may be actuated in two directions of deflection.
- the present invention additionally relates to a method for closing a micromechanical component having a substrate, having a cavity and having a cap that bounds the cavity, the cap having an access opening to the cavity and the cap having a diaphragm for closing the access opening.
- the example method includes the steps of first an interior atmosphere is set in the cavity, which has a specific composition and a specific pressure, afterward the access opening to the cavity is mechanically closed by applying the diaphragm, and the access opening is subsequently closed by the deposition of material.
- the setting of the interior atmosphere and the closing of the cavity are advantageously separated from each other and thus largely independent of each other.
- An advantageous refinement of the method for closure provides for the diaphragm to be applied by an induced pressure difference between the cavity and an environment of the component on a part of the access opening. This advantageously allows for the access to be mechanically closed in a particularly simple manner and without direct manipulation on the component.
- Another advantageous refinement of the method for closure provides for the diaphragm to be applied by an induced electrostatic action of force on a part of the access opening. This advantageously allows for the access to be mechanically closed at least in part independently of the pressure conditions in the cavity and in the environment of the component.
- the present invention is designed to close the perforation in a cap EPI in such a way that a specific interior atmosphere at a defined interior pressure is set using classical semiconductor technologies (e.g. CVD, vacuum). It is to be seen as a succession of layers together with the associated method.
- the present invention yields a synergy effect together with circuit traces in the cavity, which may be used both for conducting electricity and as a diaphragm for closing the access opening.
- a particularly advantageous refinement is a flexible diaphragm on the underside of the perforation hole, which allows for the cavity to be ventilated in such a way that gaseous coatings (e.g., antistick coatings) and filler gases may penetrate.
- gaseous coatings e.g., antistick coatings
- a closure is achieved in that by a sharp pressure drop in the outer region of the cavity, the diaphragm is pressed from below over the hole and a seal is achieved.
- a classical semiconductor deposition process e.g. CVD or sputtering
- FIG. 1 shows the layer structure of a cap in a preliminary stage of the micromechanical component according to an example embodiment of the present invention having a cap having a closure.
- FIG. 2 shows a micromechanical component according to an example embodiment of the present invention having a cap having a closure in the open state.
- FIG. 3 shows the layer structure of a cap in another preliminary stage of the micromechanical component according to an example embodiment of the present invention having a cap having a closure.
- FIG. 4 shows another micromechanical component according to an example embodiment of the present invention having a cap having a closure in the open state.
- FIGS. 5 and 6 show in an exemplary manner geometrical variants of the flexible diaphragm of the closure.
- FIG. 7 schematically shows the steps of an example method according to the present invention for manufacturing a micromechanical component having a cap having a closure.
- FIGS. 8 , 9 and 10 show steps according to an example embodiment of the present invention for using the micromechanical component having a cap having a closure for closing the micromechanical cap as shown in FIG. 2 .
- FIG. 11 schematically shows the example method steps for closing the micromechanical cap.
- FIG. 1 shows the layer structure of a cap in a preliminary stage of the micromechanical component according to an example embodiment of the present invention having a cap having a closure.
- a subsequent sacrificial layer in this case a polysilicon sacrificial layer 110 , is deposited.
- CMP chemical-mechanical polishing
- a lower nitride layer 2 a polysilicon layer 4 and an upper nitride layer 3 are deposited and structured in succession.
- a cap epitaxy layer 150 is applied.
- polysilicon layer 4 has subregions 4 a and 4 b .
- Lower nitride layer 2 has accesses from subregion 4 b to polysilicon sacrificial layer 110 .
- Upper nitride layer 3 has accesses from cap epitaxy layer 150 to subregion 4 b .
- Subregion 4 a is in this case geometrically separated from 4 b and represents an electrical circuit trace. As protection during the subsequent etching of the sacrificial layer, subregion 4 a is coated by nitride.
- FIG. 2 shows a micromechanical component according to an example embodiment of the present invention having a cap having a closure in the open state.
- a perforation 160 was formed in cap epitaxy layer 150 by etching silicon.
- subregion 4 b of polysilicon layer 4 was likewise removed by etching.
- Polysilicon sacrificial layer 110 is at least partially likewise removed by etching.
- an access 160 , 161 is formed from the topside of the formed cap into a cavity 10 . This access may subsequently be used for antistick-coating the micromechanical structures and for creating an internal atmosphere of a specific composition and a specific pressure.
- Lower nitride layer 2 forms a diaphragm 2 , which is suited to close access 160 , 161 by deflection in the direction of upper nitride layer 3 .
- Diaphragm 2 has a fastening region 2 a , which is anchored at least partly on upper nitride layer 3 , and a closure region 2 b , which is situated across from at least one perforation opening 160 .
- FIG. 3 shows the layer structure of a cap in another preliminary stage of the micromechanical component according to an example embodiment of the present invention having a cap having a closure.
- an inner nitride layer 30 and on top of that an inner polysilicon layer 40 is applied and structured. This is followed, as already described, by lower nitride layer 2 and the additional layers.
- FIG. 4 shows another micromechanical component according to an example embodiment of the present invention having a cap having a closure in the open state.
- inner nitride layer 30 under diaphragm 2 is also exposed. It has an access 162 , which is connected to accesses 160 and 161 . Access 162 may be closed mechanically by applying diaphragm 2 to inner nitride layer 30 .
- diaphragm 2 is also suitable for closing access 160 , 161 by deflecting closure region 2 b of diaphragm 2 in the direction of upper nitride layer 3 .
- FIGS. 5 and 6 represent in an exemplary manner geometrical variants of the flexible diaphragm of the closure.
- Diaphragm 2 is shown having fastening region 2 a , closure region 2 b and connections 2 c .
- the black circular mark indicates the position of the perforation hole (described above also as the access to the cavity) 160 in relation to diaphragm 2 .
- Reference numeral 161 indicates the accesses through layer 2 .
- Closure region 2 b forms the sealing surface of diaphragm 2
- fastening region 2 a forms the border of diaphragm 2 .
- Connections 2 c between regions 2 a and 2 b may be developed variously in terms of shape, number and dimension, but should preferably have flexible properties.
- FIGS. 5 and 6 show possible specific embodiments in an exemplary manner. The present invention, however, is not limited to the examples shown here.
- FIG. 7 schematically shows the steps of an example method according to the present invention for manufacturing a micromechanical component having a cap having a closure.
- a method is described for manufacturing a micromechanical component having a substrate, having a cavity 10 and having a cap bounding cavity 10 .
- the cap has an access opening 160 , 161 , 162 to cavity 10 .
- the cap has furthermore a diaphragm 2 b for closing access opening 160 , 161 , 162 .
- the example manufacturing method includes the steps:
- a lower etch stop layer 30 is additionally deposited and structured, and subsequently a lower sacrificial layer 40 is deposited and structured.
- an access opening 160 , 161 , 162 is introduced in step (f), at least parts of lower sacrificial layer 40 being removed for this purpose.
- FIGS. 8 , 9 and 10 represent steps according to an example embodiment of the present invention for using the micromechanical component having a cap having a closure for closing the micromechanical cap as shown in FIG. 2 .
- an interior atmosphere is set in a step (A) through perforation opening 160 in cavity 10 .
- the setting may include in particular the composition and the pressure of the interior atmosphere.
- a second step (B) the system is then quickly evacuated and thus there is a quick pressure drop in the outer environment of the micromechanical component and its cavity 10 .
- the pressure difference brought about between the interior atmosphere and the exterior atmosphere results in a force on diaphragm 2 , as a consequence of which the closure region 2 b is pressed onto the topside of the cavity.
- perforation opening 160 is mechanically closed from inside.
- perforation opening 160 is now closed from outside by the deposition of material. This may be performed in conventional semiconductor technology, e.g., by CVD or sputtering.
- the same mechanism may be used in another refinement of the present invention in order to enclose also low interior pressures in cavities 10 .
- the interior atmosphere is set in a first step (A), and in a second step (B) a quick pressure increase is effected in the outer environment of the micromechanical component and its cavity 10 , for example, by ventilating the system using a gas.
- perforation opening 160 is again closed from outside by the deposition of material.
- the diaphragm is situated on the outside, it is also possible to secure and seal the entire diaphragm on the outside of the cavity by material deposition.
- FIG. 11 schematically shows example method steps for closing the micromechanical cap.
- the example method includes the following method steps:
- An exemplary embodiment according to the present invention provides for diaphragm 2 b to be applied to a part of access opening 160 , 161 , 162 in step (B) by an induced pressure difference between cavity 10 and an environment of the component.
- Another exemplary embodiment of the present invention provides for diaphragm 2 b to be applied to a part of access opening 160 , 161 , 162 in step (B) by an induced electrostatic action of force.
- the described micromechanical component is preferably a component based on silicon.
- the micromechanical component may be, for example, a control element (actuator) or a measuring element (sensor). It is especially preferred if the micromechanical component takes the form of a rate-of-rotation sensor or an acceleration sensor.
- the above-described process steps of the manufacturing methods are simplified for the sake of clarity and contain, e.g., no protective structures for etching the sacrificial layer.
- the diaphragm was implemented in exemplary fashion as a nitride layer.
- Other possible suitable materials are oxide and metal (e.g. tungsten).
- the flexible diaphragm may also be manufactured from polysilicon by small modifications of the processes.
Abstract
Description
- The present invention relates to a micromechanical component having a substrate, having a cavity and having a cap that bounds the cavity. The cap has an access opening to the cavity.
- Micromechanical components are equipped with a cap for special application purposes or just in order to protect them. Glass frit bonding or anodic bonding, inter alia, are conventional for fastening a cap on the component. European Patent No. EP 1 274 648 B1 describes a packaging using thin layers, a so-called SMM encapsulation (SMM—surface micromechanics). The basis of this technology is a perforated layer made of epitaxial polysilicon over a cavity that contains a micromechanical functional element. The perforations allow the cavity to be accessed from the outside during the manufacture of the micromechanical component.
- Conventional semiconductor technologies (e.g., oxide or nitride depositions) are described as cap closure, which, however, impose severe boundary conditions on the actual functional element. In this connection, vacuum methods are used and thus also correspondingly low pressures inside the component. In this instance, the composition of the atmosphere in the interior naturally plays only a secondary role.
- The present invention relates to a manufacturing method for a micromechanical component having a substrate, having a cavity and having a cap that bounds the cavity. The cap has an access opening to the cavity. According to an example embodiment of the present invention, a diaphragm is manufactured from suitably structured layers for closing the access opening. Advantageously, it is possible to create a cap over a micromechanical component by depositing and structuring a diaphragm layer, a sacrificial layer, an etch stop layer and a cap layer, which cap offers, after an etching process, an access that is mechanically closable by a diaphragm located underneath the actual cap.
- An advantageous refinement of the example manufacturing method according to the present invention provides for the creation of a cap having an inner diaphragm by manufacturing an additional etch stop layer and an additional sacrificial layer in front of the above-mentioned layers. Advantageously, such a diaphragm may be actuated in two directions of deflection.
- The present invention additionally relates to a method for closing a micromechanical component having a substrate, having a cavity and having a cap that bounds the cavity, the cap having an access opening to the cavity and the cap having a diaphragm for closing the access opening. The example method includes the steps of first an interior atmosphere is set in the cavity, which has a specific composition and a specific pressure, afterward the access opening to the cavity is mechanically closed by applying the diaphragm, and the access opening is subsequently closed by the deposition of material. In such a method, the setting of the interior atmosphere and the closing of the cavity are advantageously separated from each other and thus largely independent of each other.
- An advantageous refinement of the method for closure provides for the diaphragm to be applied by an induced pressure difference between the cavity and an environment of the component on a part of the access opening. This advantageously allows for the access to be mechanically closed in a particularly simple manner and without direct manipulation on the component.
- Another advantageous refinement of the method for closure provides for the diaphragm to be applied by an induced electrostatic action of force on a part of the access opening. This advantageously allows for the access to be mechanically closed at least in part independently of the pressure conditions in the cavity and in the environment of the component.
- In one embodiment, the present invention is designed to close the perforation in a cap EPI in such a way that a specific interior atmosphere at a defined interior pressure is set using classical semiconductor technologies (e.g. CVD, vacuum). It is to be seen as a succession of layers together with the associated method. In particular, the present invention yields a synergy effect together with circuit traces in the cavity, which may be used both for conducting electricity and as a diaphragm for closing the access opening.
- A particularly advantageous refinement is a flexible diaphragm on the underside of the perforation hole, which allows for the cavity to be ventilated in such a way that gaseous coatings (e.g., antistick coatings) and filler gases may penetrate. A closure is achieved in that by a sharp pressure drop in the outer region of the cavity, the diaphragm is pressed from below over the hole and a seal is achieved. Immediately afterwards, a classical semiconductor deposition process (e.g. CVD or sputtering) for closing the holes is performed in the same facility.
- Given a suitable process management and hole geometry, a closure is then possible using semiconductor technologies without additional effort, which will make it possible to set an interior atmosphere with respect to pressure and composition and allow unlimited further processing (apart from boundary conditions on component stress and durability of antistick coatings).
- Exemplary embodiments of the present invention are illustrated in the figures and explained in detail below.
-
FIG. 1 shows the layer structure of a cap in a preliminary stage of the micromechanical component according to an example embodiment of the present invention having a cap having a closure. -
FIG. 2 shows a micromechanical component according to an example embodiment of the present invention having a cap having a closure in the open state. -
FIG. 3 shows the layer structure of a cap in another preliminary stage of the micromechanical component according to an example embodiment of the present invention having a cap having a closure. -
FIG. 4 shows another micromechanical component according to an example embodiment of the present invention having a cap having a closure in the open state. -
FIGS. 5 and 6 show in an exemplary manner geometrical variants of the flexible diaphragm of the closure. -
FIG. 7 schematically shows the steps of an example method according to the present invention for manufacturing a micromechanical component having a cap having a closure. -
FIGS. 8 , 9 and 10 show steps according to an example embodiment of the present invention for using the micromechanical component having a cap having a closure for closing the micromechanical cap as shown inFIG. 2 . -
FIG. 11 schematically shows the example method steps for closing the micromechanical cap. - An embodiment of the present invention is described below.
-
FIG. 1 shows the layer structure of a cap in a preliminary stage of the micromechanical component according to an example embodiment of the present invention having a cap having a closure. Over a micromechanical structure, which is not shown here in detail, a subsequent sacrificial layer, in this case a polysiliconsacrificial layer 110, is deposited. Following the deposition and chemical-mechanical polishing (CMP) of this polysiliconsacrificial layer 110, alower nitride layer 2, a polysilicon layer 4 and anupper nitride layer 3 are deposited and structured in succession. On top of this acap epitaxy layer 150 is applied. In this instance, polysilicon layer 4 hassubregions Lower nitride layer 2 has accesses fromsubregion 4 b to polysiliconsacrificial layer 110.Upper nitride layer 3 has accesses fromcap epitaxy layer 150 tosubregion 4 b.Subregion 4 a is in this case geometrically separated from 4 b and represents an electrical circuit trace. As protection during the subsequent etching of the sacrificial layer,subregion 4 a is coated by nitride. -
FIG. 2 shows a micromechanical component according to an example embodiment of the present invention having a cap having a closure in the open state. Here aperforation 160 was formed incap epitaxy layer 150 by etching silicon. Furthermore, as a sacrificial layer,subregion 4 b of polysilicon layer 4 was likewise removed by etching. Polysiliconsacrificial layer 110 is at least partially likewise removed by etching. Thus, following the opening ofperforation 160 when etching the sacrificial layer, anaccess cavity 10. This access may subsequently be used for antistick-coating the micromechanical structures and for creating an internal atmosphere of a specific composition and a specific pressure.Lower nitride layer 2 forms adiaphragm 2, which is suited to closeaccess upper nitride layer 3.Diaphragm 2 has afastening region 2 a, which is anchored at least partly onupper nitride layer 3, and aclosure region 2 b, which is situated across from at least one perforation opening 160. -
FIG. 3 shows the layer structure of a cap in another preliminary stage of the micromechanical component according to an example embodiment of the present invention having a cap having a closure. In this refinement of the present invention, on top of polysiliconsacrificial layer 110, first aninner nitride layer 30 and on top of that aninner polysilicon layer 40 is applied and structured. This is followed, as already described, bylower nitride layer 2 and the additional layers. -
FIG. 4 shows another micromechanical component according to an example embodiment of the present invention having a cap having a closure in the open state. After an etching process as shown inFIG. 2 is applied to the supplemented layer structure shown inFIG. 3 ,inner nitride layer 30 underdiaphragm 2 is also exposed. It has anaccess 162, which is connected to accesses 160 and 161.Access 162 may be closed mechanically by applyingdiaphragm 2 toinner nitride layer 30. As already described underFIG. 2 ,diaphragm 2 is also suitable for closingaccess closure region 2 b ofdiaphragm 2 in the direction ofupper nitride layer 3. -
FIGS. 5 and 6 represent in an exemplary manner geometrical variants of the flexible diaphragm of the closure.Diaphragm 2 is shown havingfastening region 2 a,closure region 2 b andconnections 2 c. The black circular mark indicates the position of the perforation hole (described above also as the access to the cavity) 160 in relation todiaphragm 2.Reference numeral 161 indicates the accesses throughlayer 2.Closure region 2 b forms the sealing surface ofdiaphragm 2, andfastening region 2 a forms the border ofdiaphragm 2.Connections 2 c betweenregions FIGS. 5 and 6 show possible specific embodiments in an exemplary manner. The present invention, however, is not limited to the examples shown here. -
FIG. 7 schematically shows the steps of an example method according to the present invention for manufacturing a micromechanical component having a cap having a closure. A method is described for manufacturing a micromechanical component having a substrate, having acavity 10 and having acap bounding cavity 10. In this instance, the cap has anaccess opening cavity 10. The cap has furthermore adiaphragm 2 b for closing access opening 160, 161, 162. The example manufacturing method includes the steps: -
- (a) providing a micromechanical component having a first
sacrificial layer 110 as the uppermost layer, - (b) depositing and structuring a
diaphragm layer 2, - (c) depositing and structuring a second sacrificial layer 4,
- (d) depositing and structuring an
etch stop layer 3, - (e) depositing a
cap layer 150,- (f) introducing an
access opening sacrificial layer 4 b, exposingdiaphragm 2 b and removing at least parts of firstsacrificial layer 110 by etching.
- (f) introducing an
- (a) providing a micromechanical component having a first
- In an exemplary embodiment of the method, following step (a) and prior to step (b), a lower
etch stop layer 30 is additionally deposited and structured, and subsequently a lowersacrificial layer 40 is deposited and structured. In addition, anaccess opening sacrificial layer 40 being removed for this purpose. -
FIGS. 8 , 9 and 10 represent steps according to an example embodiment of the present invention for using the micromechanical component having a cap having a closure for closing the micromechanical cap as shown inFIG. 2 . - Following one or more optional process steps such as, for example, an antistick coating of surfaces within
cavity 10, an interior atmosphere is set in a step (A) through perforation opening 160 incavity 10. The setting may include in particular the composition and the pressure of the interior atmosphere. - In a second step (B), the system is then quickly evacuated and thus there is a quick pressure drop in the outer environment of the micromechanical component and its
cavity 10. The pressure difference brought about between the interior atmosphere and the exterior atmosphere results in a force ondiaphragm 2, as a consequence of which theclosure region 2 b is pressed onto the topside of the cavity. As a consequence, perforation opening 160 is mechanically closed from inside. - In a third step (C), perforation opening 160 is now closed from outside by the deposition of material. This may be performed in conventional semiconductor technology, e.g., by CVD or sputtering.
- By variation in the form of a flexible diaphragm resting on the topside of the cap or by another
layer 30 having sealing surfaces and pass-throughopening 162 belowdiaphragm 2, as described above inFIGS. 3 and 4 , the same mechanism may be used in another refinement of the present invention in order to enclose also low interior pressures incavities 10. For this purpose, accordingly, the interior atmosphere is set in a first step (A), and in a second step (B) a quick pressure increase is effected in the outer environment of the micromechanical component and itscavity 10, for example, by ventilating the system using a gas. Subsequently, in a third step (C), perforation opening 160 is again closed from outside by the deposition of material. In the event that the diaphragm is situated on the outside, it is also possible to secure and seal the entire diaphragm on the outside of the cavity by material deposition. -
FIG. 11 schematically shows example method steps for closing the micromechanical cap. The example method includes the following method steps: - (A) setting an interior atmosphere in
cavity 10 - (B) mechanically closing
cavity 10 by applyingdiaphragm 2 b on an access - (C) closing perforation opening 160 from outside by material deposition
- An exemplary embodiment according to the present invention provides for
diaphragm 2 b to be applied to a part of access opening 160, 161, 162 in step (B) by an induced pressure difference betweencavity 10 and an environment of the component. - Another exemplary embodiment of the present invention provides for
diaphragm 2 b to be applied to a part of access opening 160, 161, 162 in step (B) by an induced electrostatic action of force. - The described micromechanical component is preferably a component based on silicon. The micromechanical component may be, for example, a control element (actuator) or a measuring element (sensor). It is especially preferred if the micromechanical component takes the form of a rate-of-rotation sensor or an acceleration sensor.
- The above-described process steps of the manufacturing methods are simplified for the sake of clarity and contain, e.g., no protective structures for etching the sacrificial layer. The diaphragm was implemented in exemplary fashion as a nitride layer. Other possible suitable materials are oxide and metal (e.g. tungsten). In a refinement of the present invention having an oxide sacrificial layer, the flexible diaphragm may also be manufactured from polysilicon by small modifications of the processes.
- In addition, further exemplary embodiments are also possible.
Claims (13)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005062554A DE102005062554A1 (en) | 2005-12-27 | 2005-12-27 | Micro-mechanical component used in the semiconductor industry comprises a cap having a membrane for closing an access opening |
DE102005062554.1 | 2005-12-27 | ||
DE102005062554 | 2005-12-27 | ||
PCT/EP2006/069125 WO2007074018A1 (en) | 2005-12-27 | 2006-11-30 | Micromechanical component having a cap with a closure |
Publications (2)
Publication Number | Publication Date |
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US20090090531A1 true US20090090531A1 (en) | 2009-04-09 |
US8154094B2 US8154094B2 (en) | 2012-04-10 |
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US12/158,483 Active 2028-12-19 US8154094B2 (en) | 2005-12-27 | 2006-11-30 | Micromechanical component having a cap having a closure |
Country Status (6)
Country | Link |
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US (1) | US8154094B2 (en) |
EP (1) | EP1968884A1 (en) |
JP (1) | JP5145245B2 (en) |
CN (1) | CN101331079B (en) |
DE (1) | DE102005062554A1 (en) |
WO (1) | WO2007074018A1 (en) |
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FR2948928A1 (en) * | 2009-08-06 | 2011-02-11 | Commissariat Energie Atomique | MICROCAVITE STRUCTURE AND ENCAPSULATION STRUCTURE OF A MICROELECTRONIC DEVICE |
EP2736836A1 (en) * | 2011-07-29 | 2014-06-04 | Epcos AG | Housing for semiconductor chip and semiconductor chip with a housing |
US11274035B2 (en) | 2019-04-24 | 2022-03-15 | X-Celeprint Limited | Overhanging device structures and related methods of manufacture |
US11834330B2 (en) | 2018-12-03 | 2023-12-05 | X-Celeprint Limited | Enclosed cavity structures |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007025880A1 (en) * | 2007-06-01 | 2008-12-04 | Robert Bosch Gmbh | Micromechanical component and method for producing a micromechanical component with a thin-film cap |
JP5464215B2 (en) | 2010-07-08 | 2014-04-09 | 株式会社村田製作所 | Surface mount electronic components |
JP6287089B2 (en) * | 2013-11-13 | 2018-03-07 | 村田機械株式会社 | Substrate floating device, substrate transfer device, and substrate transfer device |
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US11884537B2 (en) | 2018-12-03 | 2024-01-30 | X-Celeprint Limited | Enclosed cavity structures |
US11897760B2 (en) | 2018-12-03 | 2024-02-13 | X-Celeprint Limited | Enclosed cavity structures |
US11274035B2 (en) | 2019-04-24 | 2022-03-15 | X-Celeprint Limited | Overhanging device structures and related methods of manufacture |
Also Published As
Publication number | Publication date |
---|---|
JP5145245B2 (en) | 2013-02-13 |
WO2007074018A1 (en) | 2007-07-05 |
CN101331079B (en) | 2012-08-22 |
EP1968884A1 (en) | 2008-09-17 |
US8154094B2 (en) | 2012-04-10 |
DE102005062554A1 (en) | 2007-07-05 |
CN101331079A (en) | 2008-12-24 |
JP2009521335A (en) | 2009-06-04 |
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