US20090040644A1 - Laminated Exchange Coupling Adhesion (LECA) Media For Heat Assisted Magnetic Recording - Google Patents

Laminated Exchange Coupling Adhesion (LECA) Media For Heat Assisted Magnetic Recording Download PDF

Info

Publication number
US20090040644A1
US20090040644A1 US11/835,476 US83547607A US2009040644A1 US 20090040644 A1 US20090040644 A1 US 20090040644A1 US 83547607 A US83547607 A US 83547607A US 2009040644 A1 US2009040644 A1 US 2009040644A1
Authority
US
United States
Prior art keywords
layer
magnetic
layers
grains
magnetic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US11/835,476
Other versions
US20110235205A9 (en
US8241766B2 (en
Inventor
Bin Lu
Ganping Ju
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/336,799 external-priority patent/US7678476B2/en
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Assigned to SEAGATE TECHNOLOGY LLC reassignment SEAGATE TECHNOLOGY LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LU, BIN, JU, GANPING
Priority to US11/835,476 priority Critical patent/US8241766B2/en
Priority to SG200806015-4A priority patent/SG150469A1/en
Priority to JP2008203942A priority patent/JP4710087B2/en
Publication of US20090040644A1 publication Critical patent/US20090040644A1/en
Assigned to WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT AND SECOND PRIORITY REPRESENTATIVE, JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT AND FIRST PRIORITY REPRESENTATIVE reassignment WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT AND SECOND PRIORITY REPRESENTATIVE SECURITY AGREEMENT Assignors: MAXTOR CORPORATION, SEAGATE TECHNOLOGY INTERNATIONAL, SEAGATE TECHNOLOGY LLC
Assigned to SEAGATE TECHNOLOGY LLC, SEAGATE TECHNOLOGY INTERNATIONAL, MAXTOR CORPORATION, SEAGATE TECHNOLOGY HDD HOLDINGS reassignment SEAGATE TECHNOLOGY LLC RELEASE Assignors: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Assigned to THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT reassignment THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT SECURITY AGREEMENT Assignors: SEAGATE TECHNOLOGY LLC
Publication of US20110235205A9 publication Critical patent/US20110235205A9/en
Publication of US8241766B2 publication Critical patent/US8241766B2/en
Application granted granted Critical
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109Details
    • G11B5/313Disposition of layers
    • G11B5/3133Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
    • G11B5/314Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002Special dispositions or recording techniques
    • G11B2005/0005Arrangements, methods or circuits
    • G11B2005/001Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002Special dispositions or recording techniques
    • G11B2005/0005Arrangements, methods or circuits
    • G11B2005/0021Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/1278Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier

Definitions

  • This invention relates to data storage media, and more particularly to such media for use in heat assisted magnetic storage systems.
  • Heat assisted magnetic recording utilizes thermal energy to lower the energy barrier for magnetization reversal of magnetic grains in a magnetic storage media.
  • the writing temperature should be very close to the Curie temperature (T c ) of the materials used in the storage media.
  • T c should be lower than the boiling temperature (e.g., 650 K) of a lubricant that coats the top of the media.
  • Data bits stored on a storage media are represented by the direction of magnetization of a plurality of grains of magnetic material in the storage media.
  • the direction of magnetization of the grains is set by a magnetic field produced by a recording head in a writing operation. Even when the media is heated to the Curie temperature during writing, the Zeeman energy provided by the interaction of a magnetic field from a recording head and media grain magnetization is very small because the magnetization of the media grains is close to zero. As a result, media grains do not experience a strong difference between the desired writing direction of the magnetization and the opposite direction. Thus, when the recorded bit is cooled, many grains may be frozen into unwanted magnetization directions.
  • One way to address this issue is to use a data storage media having a FePt/FeRh bilayer structure.
  • the FeRh layer's magnetization can be instantaneously changed from zero (i.e., the antiferromagnetic state) to above 1000 emu/cm 3 .
  • the magnetically soft FeRh will reduce the switching field of the FePt grains.
  • both FeRh and FePt are chemically ordered structures, which require thermal processing during manufacture, it is difficult to make either of the thin films into a layer of fine grains.
  • the top layer was used to improve the thermal stability, and the discontinuous bottom layer had a relatively large unit size, which limited the thermal assisted switching effect.
  • the invention provides an apparatus including a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and magnetic grains of the first layer are unstable when the second layer of magnetic material is heated above the second Curie temperature.
  • the apparatus can further include an exchange coupling control layer positioned between the first and second layers.
  • the exchange coupling control layer can have a thickness between about 0 nm and about 5 nm.
  • Magnetic grains in the first layer can have diameters of between about 1 nm and about 10 nm, and magnetic grains in the second layer can have diameters of between about 1 nm and about 1000 nm.
  • the first layer can have a thickness between about 2 nm and about 30 nm, and the second layer can have a thickness between about 0.5 nm and about 30 nm.
  • the first layer of magnetic material in each of the bilayers can be a multilayer structure.
  • the first layer in each of the bilayers can include a first plurality of grains of magnetic material having a first intergranular exchange coupling
  • the second layer in each of the bilayers can include a second plurality of grains of magnetic material having a second intergranular exchange coupling, wherein the second intergranular exchange coupling is larger than the first intergranular exchange coupling.
  • the invention provides an apparatus including first and second layers of magnetic materials positioned on opposite sides of a third layer of magnetic material, wherein the first and second layers have Curie temperatures higher than the Curie temperature of the third layer, and wherein magnetic grains of the first and second layers are unstable when the third layer of magnetic material is heated above its Curie temperatures.
  • the apparatus can further include an exchange coupling control layer positioned between the first layer and the third layer.
  • the exchange coupling control layer can have a thickness between about 0 nm and about 5 nm.
  • the invention provides an apparatus including first and second layers of magnetic materials positioned on opposite sides of a third layer of magnetic material, wherein the first and second layers have Curie temperatures lower than the Curie temperature of the third layer, and wherein magnetic grains of the third layer are unstable when the first and second layers of magnetic material are heated above their Curie temperatures.
  • the apparatus can further include an exchange coupling control layer positioned between the first layer and the third layer.
  • the exchange coupling control layer can have a thickness between about 0 nm and about 5 nm.
  • the invention provides an apparatus including a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and the magnetic grains in the first layer have diameters of between about 1 nm and about 10 nm, and magnetic grains in the second layer have diameters of between about 1 nm and about 1000 nm.
  • the invention provides an apparatus including a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and the first and second layers of magnetic material are magnetically coupled to each other at room temperature and magnetically uncoupled when one of the layers of magnetic material is heated above its Curie temperature.
  • FIG. 1 is a pictorial representation of a data storage device in the form of a disc drive storage system that can include data storage media having a magnetic recording film in accordance with an aspect of the invention.
  • FIG. 2 is a schematic illustration of a heat assisted magnetic recording head and an adjacent data storage media.
  • FIG. 3 is a schematic sectional view of storage media including a magnetic recording film in accordance with an aspect of the invention.
  • FIG. 4 is a side view of a layer in the storage media of FIG. 3 .
  • FIG. 5 is a schematic diagram that illustrates switching in a magnetic recording film in accordance with an aspect of the invention.
  • FIG. 6 is a graph of coercivity versus thickness.
  • FIGS. 7-13 are hysteresis curves that illustrate the magnetic properties of various storage media.
  • FIG. 14 is a graph of K u V/k B T versus a number of bilayers in a storage media.
  • FIG. 15 is a graph of H o versus a number of bilayers in a storage media.
  • FIG. 1 is a pictorial representation of a data storage device in the form of a disc drive 10 that can utilize a storage media constructed in accordance with an aspect of the invention.
  • the disc drive 10 includes a housing 12 (with the upper portion removed and the lower portion visible in this view) sized and configured to contain the various components of the disc drive.
  • the disc drive 10 includes a spindle motor 14 for rotating at least one magnetic storage media 16 within the housing.
  • At least one arm 18 is contained within the housing 12 , with each arm 18 having a first end 20 with a recording head or slider 22 , and a second end 24 pivotally mounted on a shaft by a bearing 26 .
  • An actuator motor 28 is located at the aim's second end 24 for pivoting the arm 18 to position the recording head 22 over a desired sector or track 27 of the disc 16 .
  • the actuator motor 28 is regulated by a controller, which is not shown in this view and is well-known in the art.
  • HAMR heat assisted magnetic recording
  • electromagnetic radiation for example, visible, infrared or ultraviolet light is directed onto a surface of the data storage media to raise the temperature of a localized area of the media to facilitate switching of the magnetization of the area.
  • Recent designs of HAMR recording heads include a thin film waveguide on a slider to guide light to the storage media for localized heating of the storage media.
  • a grating coupler can be used to launch light into the waveguide.
  • FIG. 1 shows a disc drive
  • the invention can be applied to other storage devices that include a transducer and a storage media, wherein the storage media is heated to facilitate switching of bits in the storage media.
  • Other such storage devices can include, for example, probe type data storage devices.
  • FIG. 2 is a schematic side view of a HAMR recording head 22 and a magnetic storage media 16 .
  • this example shows a perpendicular magnetic recording head and a perpendicular magnetic storage media, it will be appreciated that the invention may also be used in conjunction with other types of recording heads and/or storage media where it may be desirable to employ heat assisted recording.
  • the head 22 includes a writer section comprising a main write pole 30 and a return or opposing pole 32 that are magnetically coupled by a yoke or pedestal 35 . It will be appreciated that the head 22 may be constructed with a write pole 30 only and no return pole 32 or yoke 35 . A magnetization coil 33 surrounds the yoke or pedestal 35 for energizing the head 22 .
  • the HAMR head 22 may also include a read portion, not shown, which may be any conventional type read head as is generally known in the art.
  • the storage media 16 is positioned adjacent to or under the recording head 22 . Relative movement between the head and the media is indicated by arrow 62 .
  • the recording head 22 also includes a structure for heating the magnetic storage media 16 proximate to where the write pole 30 applies the magnetic write field H to the storage media 16 .
  • the media 16 includes a substrate 38 , a heat sink layer 40 , a seed layer 41 , a magnetic recording layer 42 , and a protective layer 43 .
  • a magnetic field H produced by current in the coil 33 is used to control the direction of magnetization of bits 44 in the recording layer of the media.
  • the structure for heating the media may include, for example, a planar optical waveguide schematically represented by reference number 50 .
  • the waveguide 50 conducts energy from a source 52 of electromagnetic radiation, which may be, for example, ultraviolet, infrared, or visible light.
  • the source 52 may be, for example, a laser diode, or other suitable laser light source for directing a light beam 54 toward the waveguide 50 .
  • Various techniques that are known for coupling the light beam 54 into the waveguide 50 may be used.
  • the light source 52 may work in combination with an optical fiber and external optics for collimating the light beam 54 from the optical fiber toward a diffraction grating on the waveguide.
  • a laser may be mounted on the waveguide 50 and the light beam 54 may be directly coupled into the waveguide 50 without the need for external optical configurations.
  • the light beam 54 Once the light beam 54 is coupled into the waveguide 50 , the light propagates through the waveguide 50 toward a truncated end 56 of the waveguide 50 that is formed adjacent the air-bearing surface (ABS) of the recording head 22 .
  • Light 58 exits the end of the waveguide and heats a portion 60 of the media, as the media moves relative to the recording head as shown by arrow 62 .
  • FIG. 3 is a schematic representation of a storage media 70 constructed in accordance with one aspect of the invention.
  • This media is referred to as Laminated Exchange Coupling Adhesion (LECA) media.
  • LCA Laminated Exchange Coupling Adhesion
  • the word “adhesion” indicates that the layers are magnetically coupled together at room temperature, but at write temperature, the intergranular and interlayer coupling is eliminated when one of the layers is heated above its Curie temperature.
  • the storage media 70 includes a composite thin film magnetic recording layer 72 on an underlayer structure 74 .
  • the underlayer structure includes a substrate 76 , a heat sink layer 78 that may serve as a soft magnetic underlayer, and a seed layer 80 on the heat sink layer.
  • the substrate 76 may be made of any suitable material such as ceramic glass, amorphous glass, aluminum or NiP coated AlMg.
  • the heat sink layer 78 can have a thickness of from about 10 nm to about 1000 nm, and may be made of any suitable material such as Cu, Ag, Al, Au, CuZr, CoFe, FeCoB, FeAlN, FeAlSi, NiFe, CoZrNb or FeTaN.
  • the heat sink layer 78 may also comprise a plurality of laminated layers.
  • a protective and/or lubricating layer 82 can be provided on the recording layer.
  • the composite thin film magnetic recording layer includes a first (or bottom) layer 84 , which in this example is a granular layer having magnetic grains 86 , that are separated by a decoupling material 88 , which can be an oxide.
  • the composite magnetic recording film further includes a second layer (or top) 90 that is a substantially continuous layer.
  • the second layer can have magnetic grains 92 that are larger than the grains of the first layer.
  • the grains 92 of layer 90 can also be separated by an oxide 94 .
  • layer 84 can have a thickness in the range of about 2 nm to about 30 nm
  • layer 90 can have a thickness in the range of about 0.5 nm to about 30 nm.
  • Layers 84 and 90 form a first bilayer structure.
  • Layer 90 can be a continuous layer or a discontinuous layer.
  • a continuous layer includes magnetic grains that are more exchange coupled, with less or no oxide doping used as grain segregation
  • discontinuous layer includes magnetic grains that are less exchange coupled, with more oxide doping used as grain segregation.
  • the composite thin film magnetic recording layer includes additional layers 96 and 98 that can be similar to layer 84 , and layers 100 and 102 that can be similar to layer 90 .
  • layer 96 is a granular layer having magnetic grains 104 , that are separated by a decoupling material 106 , which can be an oxide
  • layer 98 is a granular layer having magnetic grains 108 , that are separated by a decoupling material 110 , which can be an oxide.
  • Layer 100 can be a granular layer having magnetic grains 112 , that are separated by a decoupling material 114 , which can be an oxide, and layer 102 can be a granular layer having magnetic grains 116 , that are separated by a decoupling material 118 , which can be an oxide.
  • Layers 96 and 100 form a second bilayer structure, and layers 98 and 102 form a third bilayer structure.
  • Layers 84 , 94 and 96 are high K u , high T c , layers having a granular structure that is thermally unstable in the absence of magnetic coupling through layers 90 , 100 and 102 .
  • Layers 90 , 100 and 102 are low T c layers, having grains that are continuously exchange coupled with each other at temperatures below the recording temperature. Layers 90 , 100 and 102 are referred to as exchange coupling layers.
  • Optional exchange coupling control layers 120 , 122 , 124 , 126 and 128 may be provided between the layers to allow tuning of the interlayer exchange coupling.
  • the thickness of the optional exchange coupling control layers can be changed to control the amount of exchange coupling between the first and second layers.
  • the exchange coupling control layers can have a thickness of about 0 nm to about 5 nm, and can be made of, for example, Pt, Ir, Rh, Pd or Ru.
  • the seed layer can have a thickness of from about 1 nm to about 50 nm and may be used to control properties such as orientation and grain size of the subsequently deposited layers.
  • the seed layer may be a face centered cubic material such as Pt which controls the orientation of layer 84 , or a material such as Ru or Rh which controls grain size and facilitates epitaxial growth of the subsequently deposited layers, or a combination thereof.
  • the seed layer may be made of one or more layers of material such as CoCr, CoCrRu, Ru, Pt, Pd, Rh, Ta, TiC, indium tin oxide (ITO), AlN, ZnO or another metal oxide.
  • the protective layer 82 may be made of any suitable material such as diamond-like carbon.
  • the invention provides a composite HAMR storage media with a thin film recording layer including layers of magnetic material having different Curie temperatures and different intergranular exchange coupling.
  • the recording layer in the storage media includes at least two different functional (i.e., magnetic) components.
  • the magnetic component of layers 84 , 96 and 98 can be, for example, Co 3 Pt, CoXPt alloy, CoX/Pt multilayer, CoXPd alloy, CoX/Pd multilayer, FePt, FeYPt alloy, or TbFeCo, wherein X can be, for example, Cr, B, Ni, Ta, etc., and Y can be, for example, Cu, Ni, Co, B, Ag, Au, Mn, etc.
  • the layers can be constructed to have different Curie temperatures by using different compositions.
  • Grain sizes can be between about 1 nm and about 10 nm in layers 84 , 96 and 98 , and between about 1 nm and about 1000 nm in layers 90 , 100 and 102 . These grain sizes are in-plane dimensions that approximate the diameter of the grains, although the grains are not truly circular.
  • the high K u , high T c , layers 84 , 96 and 98 have high anisotropy and smaller grains, and are thermally unstable by themselves at storage temperatures (or room temperature (RT)), while low T c layers 90 , 100 and 102 have grains with comparable (or smaller) anisotropy but much larger intergranular exchange coupling.
  • Intergranular exchange coupling is the magnetic energy resulting from the magnetic interaction of the granular magnetic material. In each layer the grains are positioned in a plane and extend through the plane thickness. Since the magnetic coupling is a very short range interaction, the interaction energy is determined by properties of the layer's microstructure and specifically the grain boundaries.
  • the low T c layers (in this example, layers 90 , 100 and 102 ) are heated to a temperature above the Curie temperature and become non-magnetic.
  • coupling between grains of the high T c layers through the low T c layers is smaller at recording temperatures than at storage temperatures.
  • the thermal stability of the multilayer media is enhanced due to increased intergranular exchange coupling between grains of the high T c layers, through the low T c layers.
  • the high T c , high K u grains can be small (e.g., 5 nm) with a well-decoupled granular microstructure.
  • the substantially continuous layers (in this example, layers 90 , 100 and 102 ) are the low T c magnetic layers that can be epitaxially grown on top of the high T c layers; they also allow the next high T c layer to be grown epitaxially.
  • high K u materials have higher T c 's.
  • the strong relationship between T c and magnetic anisotropy (K u ) of magnetic materials is also observed in Co/Pt multilayer systems.
  • the high T c layers can therefore be constructed of multilayers such as Co/Pt.
  • FIG. 4 is a side view of a multilayer structure 130 that can be used for the layers of the media of FIG. 3 .
  • the multilayer structure 130 includes a plurality of layers 132 , which can be, for example, Co/Pt layers. Magnetic grains 134 in the layers are separated by an oxide 136 .
  • the T c and K u of the Co/Pt multilayer structure 130 can be changed by varying relative thickness of Co and Pt layers.
  • the individual high T c and high K u grains are thermally unstable at the recording temperature and within the time scale of the writing. At lower temperatures these thermally unstable grains are coupled with each other laterally and vertically through the adjacent low T c layer. At recording temperatures (i.e., T write >the low T c ) the high T c grains are superparamagnetic since the exchange adhesion layers (i.e., the low T c layers) become paramagnetic. Then when the applied writing field is larger than the dynamic saturation field of the storage media, the direction of magnetization of the magnetic grains subjected to the write field will align with the applied write field.
  • both the high T c and low T c layers can each be constructed using Co/Pt multilayers.
  • a significant advantage of this media design is that the writing temperature is much lower than the high T c . Consequently the magnetic saturation (M s ) of the high T c layer is still very high.
  • the effect of magnetic switching i.e., the Zeeman energy
  • M s is just above zero.
  • FIG. 5 is a schematic diagram that illustrates switching in a magnetic recording film in accordance with an aspect of the invention.
  • Item 140 represents a bit in a magnetic recording film 142 having three high T c layers 144 , 146 and 148 , and three low T c layers 150 , 152 and 154 .
  • the high T c layers include a plurality of magnetic grains 156 .
  • the temperature of the film is initially below the Curie temperature of the low T c layers, and all of the grains 156 have the same direction of magnetization as illustrated by the arrows 158 , and the direction of magnetization of the low T c layers is also fixed, in this case in a vertical direction.
  • Item 160 represents a bit in the magnetic recording film 142 , which has been heated above the Curie temperature of the low T c layers. At this temperature, the low T c layers are paramagnetic and the grains of the high T c layers are no longer magnetically coupled through the low T c layers. Thus the directions of magnetization in the grains 156 are not uniform.
  • Item 162 represents a bit in the magnetic recording film 142 when it is subjected to an external magnetic field 164 , which can be a write field from a magnetic recording head.
  • the magnetization of all (or in a practical example, substantially all) of the grains 156 aligns with the applied magnetic field. Then the film is allowed to cool, and the magnetization of all (or substantially all) of the grains 156 remains fixed in the new direction, as illustrated in bit 166 .
  • FIG. 6 is a graph of coercivity H c versus thickness of high T c , high K u Co/Pt multilayer films. Note that for layer thicknesses beyond 12 nm, the H c does not increase. This indicates the basic coherent switching unit is around 12 nm high for a column about 6 nm in diameter. The diameter of the grains can be estimated to be about 6 nm based on experience of past test results.
  • FIGS. 3 and 4 Using the structure of FIGS. 3 and 4 as a test structure wherein the layers are constructed as Co/Pt multilayers, when the thickness of the granular high K u , high T c Co/Pt multilayer is reduced from about 24 nm to about 2 nm, the static MOKE H c of the films decreases dramatically as each individual grain becomes thermally unstable.
  • the hysteresis loops of the 11.8 nm and 2.9 nm samples are shown in FIGS. 7 and 8 respectively.
  • the full structure of the films is: Glass substrate ⁇ Ta 3 nm ⁇ RuCr 10 nm ⁇ Ru+ZrO 2 15 nm ⁇ (Co/Pt) ⁇ 16+Nb 2 O 5 20 vol % ⁇ carbon overcoat.
  • the Ta and RuCr layers are seed layers.
  • the Ru+ZrO 2 layer is a low T c layer interlayer that provides a template for smaller grains.
  • a multilayer with 16 repeats i.e., 16 bilayers adjacent to each other
  • a multilayer with 4 repeats can be used in a media with a 2.9 nm thickness, as shown in FIG. 8 .
  • FIGS. 9-12 are hysteresis curves that illustrate the magnetic properties of various storage media.
  • the curve with open symbols is the MOKE loop without background correction
  • the solid line curve is the true MOKE loop after linear background correction.
  • FIG. 7 shows the MOKE hysteresis loops of a single granular high K u Co/Pt layer having a thickness of 11.8 nm.
  • FIG. 8 shows the MOKE hysteresis loops of a single granular high K u Co/Pt structure having a thickness of 2.9 nm. It can be seen that the grains in the 11.8 nm thick films are well decoupled. The value of H c ⁇ H n is 6.8 kOe, where H n is the nucleation field. This is equal to a 4 ⁇ M s value of 7.2 kOe for the sample assuming that M s is 600 emu/cc. Therefore there is very little exchange coupling between the grains. It also can be seen that the thinner sample becomes superparamagnetic at room temperature within the time scale of MOKE measurement. The loop cannot keep the full remanence. Neither does it have a high coercivity.
  • FIGS. 9-12 Hysteresis curves for four different configurations of LECA media having the structure of FIG. 3 are shown in FIGS. 9-12 .
  • the high K u multilayer is fixed at 2.9 nm where an individual layer of such multilayer would be superparamagnetic.
  • FIG. 9 shows the MOKE hysteresis loop of LECA media with an exchange layer thickness of 3.1 nm.
  • FIG. 10 shows the MOKE hysteresis loop of a LECA media with an exchange layer thickness of 2.3 nm.
  • FIG. 11 shows the MOKE hysteresis loop of a LECA media with an exchange layer thickness of 1.6 nm.
  • FIG. 12 shows the MOKE hysteresis loop of a LECA media with an exchange layer thickness of 0.8 nm.
  • FIG. 13 shows the MOKE hysteresis loop of a high T c multilayer that has the same thickness of high T c multilayer in the LECA media in FIGS. 9-12 , but without an exchange coupling layer.
  • the thickness of the exchange coupling adhesion layer is reduced from about 3 nm to about 0 nm to demonstrate the exchange coupling effect in the LECA media.
  • the exchange layer gets thinner, the H n of the media becomes smaller, indicating the whole media becomes less thermally stable.
  • Granular, well-decoupled, high T c layers can be fabricated for use in data storage media.
  • the grains can be epitaxially grown judging in the (111) orientation.
  • the high T c layer when the high T c layer is 3 nm thick, it is thermally unstable. However, when three layers of the 3 nm thick high T c are laminated with the low T c layers in the configuration shown in FIG. 3 , they are very thermally stable.
  • FIG. 14 shows thermal stability factor K u V/k B T of the high T c layer versus a number of Co/Pt bilayers.
  • FIG. 15 shows that the dynamic coercivity H o starts to drop when the number (N) of repeated bilayers is less than 10 (i.e., N ⁇ 10). This means the low K u /kT ratio takes effect in a short time scale even at room temperature.
  • MFM images on Laminated Exchange Coupling Adhesion (LECA) media show that the domain (e.g., magnetic cluster) size in the ac-erased state varies with the change of media composition (i.e., low T c , high T c and oxide), which is due to the change of effective coupling.
  • domain e.g., magnetic cluster
  • the film becomes very strongly exchange coupled.
  • the high T c multilayer with the oxide has the smallest switching units, and the low T c with the oxide has larger switching units. That is, the switching cluster size of LECA is less than, or equal to that of the low T c oxide media. This is the case at room temperature, not necessarily the case at writing temperature since the coupled low T c media will be heated above T c and hence is non-magnetic, reducing the intergranular exchange coupling.
  • the invention provides a HAMR media, which fully utilizes the K u potential of a magnetic material system. It can be switched by HAMR at a lubricant friendly temperature, which is lower than the T c of the magnetic material.
  • Another advantage of the design is that the high K u grains possess a fairly high magnetic moment at the temperature of writing. As a result, a magnetic writer can exert a much stronger force to switch the grains when compared with T c writing where the moment is close to zero.
  • the invention provides a storage media having a plurality of bilayers, each including a first magnetic layer having a high T c and a high K u , positioned adjacent to a second magnetic layer having a low T c .
  • a storage media having a plurality of bilayers, each including a first magnetic layer having a high T c and a high K u , positioned adjacent to a second magnetic layer having a low T c .
  • a storage media having a plurality of bilayers, each including a first magnetic layer having a high T c and a high K u , positioned adjacent to a second magnetic layer having a low T c .
  • the invention provides a data storage media including at least two layers of high T c , high K u materials positioned on opposite sides of a layer of low T c materials.
  • a data storage media including at least two layers of high T c , high K u materials positioned on opposite sides of a layer of low T c materials.
  • high T c , high K u layers 84 and 96 are positioned on opposite sides of a layer 90 of low T c materials.
  • the invention provides a data storage media including a layer of high T c , high K u materials positioned between two layers of low T c materials.
  • a data storage media including a layer of high T c , high K u materials positioned between two layers of low T c materials.
  • high T c , high K u layer 96 is positioned between layers 90 and 100 of low T c materials.
  • the media of this invention utilizes the temperature effects on the high K u materials to allow writing to the media below the Curie temperature of the high K u material.
  • Another advantage of the design is that the high K u grains possess a fairly high magnetic moment at the temperature of writing. As a result, the magnetic writer can exert a much stronger force to switch the grains compared with writing at a temperature near the Curie temperature, where the moment is close to zero.
  • the apparatus of this invention uses thermally activated switching of small magnetic units, which are vertically exchange decoupled from other layers.
  • the invention encompasses bilayer structures and other multilayer structures, including trilayer structures including a layer of low T c material between two layers of high T c material, or a layer of high T c material between two layers of low T c material.

Abstract

An apparatus includes a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and magnetic grains of the first layer are unstable when the second layer of magnetic material is heated above the second Curie temperature. The recording temperature is reduced due to the smaller switching volume achieved by using vertically decoupled laminations at elevated temperatures.

Description

    STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
  • This invention was made with United States Government support under Agreement No. 70NANB1H3056 awarded by the National Institute of Standards and Technology (NIST). The United States Government has certain rights in the invention.
  • FIELD OF THE INVENTION
  • This invention relates to data storage media, and more particularly to such media for use in heat assisted magnetic storage systems.
  • BACKGROUND OF THE INVENTION
  • Heat assisted magnetic recording (HAMR) utilizes thermal energy to lower the energy barrier for magnetization reversal of magnetic grains in a magnetic storage media. To realize thermally assisted reversal of the direction of magnetization of the grains, the writing temperature should be very close to the Curie temperature (Tc) of the materials used in the storage media. Moreover, Tc should be lower than the boiling temperature (e.g., 650 K) of a lubricant that coats the top of the media.
  • There is a strong relationship between Tc and magnetic anisotropy (Ku) of magnetic materials. Generally speaking, high Ku materials have higher Tc's. For example, in a single crystalline film of magnetic material such as FeNiPt, when Tc is reduced, the Ku is also reduced significantly. Such physical realities make it difficult to use HAMR efficiently to increase areal density of magnetic recording.
  • Data bits stored on a storage media are represented by the direction of magnetization of a plurality of grains of magnetic material in the storage media. The direction of magnetization of the grains is set by a magnetic field produced by a recording head in a writing operation. Even when the media is heated to the Curie temperature during writing, the Zeeman energy provided by the interaction of a magnetic field from a recording head and media grain magnetization is very small because the magnetization of the media grains is close to zero. As a result, media grains do not experience a strong difference between the desired writing direction of the magnetization and the opposite direction. Thus, when the recorded bit is cooled, many grains may be frozen into unwanted magnetization directions.
  • One way to address this issue is to use a data storage media having a FePt/FeRh bilayer structure. When heated, the FeRh layer's magnetization can be instantaneously changed from zero (i.e., the antiferromagnetic state) to above 1000 emu/cm3. If FePt grains are positioned on top of the FeRh grains, the magnetically soft FeRh will reduce the switching field of the FePt grains. However, since both FeRh and FePt are chemically ordered structures, which require thermal processing during manufacture, it is difficult to make either of the thin films into a layer of fine grains. Furthermore, in a previous two layer design, the top layer was used to improve the thermal stability, and the discontinuous bottom layer had a relatively large unit size, which limited the thermal assisted switching effect.
  • There is a need for storage media that uses high Ku materials that can be switched in a HAMR data storage system.
  • SUMMARY OF THE INVENTION
  • In a first aspect, the invention provides an apparatus including a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and magnetic grains of the first layer are unstable when the second layer of magnetic material is heated above the second Curie temperature.
  • The apparatus can further include an exchange coupling control layer positioned between the first and second layers. The exchange coupling control layer can have a thickness between about 0 nm and about 5 nm.
  • Magnetic grains in the first layer can have diameters of between about 1 nm and about 10 nm, and magnetic grains in the second layer can have diameters of between about 1 nm and about 1000 nm. The first layer can have a thickness between about 2 nm and about 30 nm, and the second layer can have a thickness between about 0.5 nm and about 30 nm.
  • The first layer of magnetic material in each of the bilayers can be a multilayer structure.
  • The first layer in each of the bilayers can include a first plurality of grains of magnetic material having a first intergranular exchange coupling, and the second layer in each of the bilayers can include a second plurality of grains of magnetic material having a second intergranular exchange coupling, wherein the second intergranular exchange coupling is larger than the first intergranular exchange coupling.
  • In another aspect, the invention provides an apparatus including first and second layers of magnetic materials positioned on opposite sides of a third layer of magnetic material, wherein the first and second layers have Curie temperatures higher than the Curie temperature of the third layer, and wherein magnetic grains of the first and second layers are unstable when the third layer of magnetic material is heated above its Curie temperatures.
  • The apparatus can further include an exchange coupling control layer positioned between the first layer and the third layer. The exchange coupling control layer can have a thickness between about 0 nm and about 5 nm.
  • In another aspect, the invention provides an apparatus including first and second layers of magnetic materials positioned on opposite sides of a third layer of magnetic material, wherein the first and second layers have Curie temperatures lower than the Curie temperature of the third layer, and wherein magnetic grains of the third layer are unstable when the first and second layers of magnetic material are heated above their Curie temperatures.
  • The apparatus can further include an exchange coupling control layer positioned between the first layer and the third layer. The exchange coupling control layer can have a thickness between about 0 nm and about 5 nm.
  • In another aspect, the invention provides an apparatus including a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and the magnetic grains in the first layer have diameters of between about 1 nm and about 10 nm, and magnetic grains in the second layer have diameters of between about 1 nm and about 1000 nm.
  • In another aspect, the invention provides an apparatus including a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and the first and second layers of magnetic material are magnetically coupled to each other at room temperature and magnetically uncoupled when one of the layers of magnetic material is heated above its Curie temperature.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a pictorial representation of a data storage device in the form of a disc drive storage system that can include data storage media having a magnetic recording film in accordance with an aspect of the invention.
  • FIG. 2 is a schematic illustration of a heat assisted magnetic recording head and an adjacent data storage media.
  • FIG. 3 is a schematic sectional view of storage media including a magnetic recording film in accordance with an aspect of the invention.
  • FIG. 4 is a side view of a layer in the storage media of FIG. 3.
  • FIG. 5 is a schematic diagram that illustrates switching in a magnetic recording film in accordance with an aspect of the invention.
  • FIG. 6 is a graph of coercivity versus thickness.
  • FIGS. 7-13 are hysteresis curves that illustrate the magnetic properties of various storage media.
  • FIG. 14 is a graph of KuV/kBT versus a number of bilayers in a storage media.
  • FIG. 15 is a graph of Ho versus a number of bilayers in a storage media.
  • DETAILED DESCRIPTION OF THE INVENTION
  • FIG. 1 is a pictorial representation of a data storage device in the form of a disc drive 10 that can utilize a storage media constructed in accordance with an aspect of the invention. The disc drive 10 includes a housing 12 (with the upper portion removed and the lower portion visible in this view) sized and configured to contain the various components of the disc drive. The disc drive 10 includes a spindle motor 14 for rotating at least one magnetic storage media 16 within the housing. At least one arm 18 is contained within the housing 12, with each arm 18 having a first end 20 with a recording head or slider 22, and a second end 24 pivotally mounted on a shaft by a bearing 26. An actuator motor 28 is located at the aim's second end 24 for pivoting the arm 18 to position the recording head 22 over a desired sector or track 27 of the disc 16. The actuator motor 28 is regulated by a controller, which is not shown in this view and is well-known in the art.
  • For heat assisted magnetic recording (HAMR), electromagnetic radiation, for example, visible, infrared or ultraviolet light is directed onto a surface of the data storage media to raise the temperature of a localized area of the media to facilitate switching of the magnetization of the area. Recent designs of HAMR recording heads include a thin film waveguide on a slider to guide light to the storage media for localized heating of the storage media. To launch light into the waveguide, a grating coupler can be used.
  • While FIG. 1 shows a disc drive, the invention can be applied to other storage devices that include a transducer and a storage media, wherein the storage media is heated to facilitate switching of bits in the storage media. Other such storage devices can include, for example, probe type data storage devices.
  • FIG. 2 is a schematic side view of a HAMR recording head 22 and a magnetic storage media 16. Although this example shows a perpendicular magnetic recording head and a perpendicular magnetic storage media, it will be appreciated that the invention may also be used in conjunction with other types of recording heads and/or storage media where it may be desirable to employ heat assisted recording.
  • In the example of FIG. 2, the head 22 includes a writer section comprising a main write pole 30 and a return or opposing pole 32 that are magnetically coupled by a yoke or pedestal 35. It will be appreciated that the head 22 may be constructed with a write pole 30 only and no return pole 32 or yoke 35. A magnetization coil 33 surrounds the yoke or pedestal 35 for energizing the head 22. The HAMR head 22 may also include a read portion, not shown, which may be any conventional type read head as is generally known in the art. The storage media 16 is positioned adjacent to or under the recording head 22. Relative movement between the head and the media is indicated by arrow 62.
  • As illustrated in FIG. 2, the recording head 22 also includes a structure for heating the magnetic storage media 16 proximate to where the write pole 30 applies the magnetic write field H to the storage media 16. The media 16 includes a substrate 38, a heat sink layer 40, a seed layer 41, a magnetic recording layer 42, and a protective layer 43. A magnetic field H produced by current in the coil 33 is used to control the direction of magnetization of bits 44 in the recording layer of the media.
  • The structure for heating the media may include, for example, a planar optical waveguide schematically represented by reference number 50. The waveguide 50 conducts energy from a source 52 of electromagnetic radiation, which may be, for example, ultraviolet, infrared, or visible light. The source 52 may be, for example, a laser diode, or other suitable laser light source for directing a light beam 54 toward the waveguide 50. Various techniques that are known for coupling the light beam 54 into the waveguide 50 may be used. For example, the light source 52 may work in combination with an optical fiber and external optics for collimating the light beam 54 from the optical fiber toward a diffraction grating on the waveguide. Alternatively, a laser may be mounted on the waveguide 50 and the light beam 54 may be directly coupled into the waveguide 50 without the need for external optical configurations. Once the light beam 54 is coupled into the waveguide 50, the light propagates through the waveguide 50 toward a truncated end 56 of the waveguide 50 that is formed adjacent the air-bearing surface (ABS) of the recording head 22. Light 58 exits the end of the waveguide and heats a portion 60 of the media, as the media moves relative to the recording head as shown by arrow 62.
  • FIG. 3 is a schematic representation of a storage media 70 constructed in accordance with one aspect of the invention. This media is referred to as Laminated Exchange Coupling Adhesion (LECA) media. The word “adhesion” indicates that the layers are magnetically coupled together at room temperature, but at write temperature, the intergranular and interlayer coupling is eliminated when one of the layers is heated above its Curie temperature. The storage media 70 includes a composite thin film magnetic recording layer 72 on an underlayer structure 74. In this example the underlayer structure includes a substrate 76, a heat sink layer 78 that may serve as a soft magnetic underlayer, and a seed layer 80 on the heat sink layer.
  • The substrate 76 may be made of any suitable material such as ceramic glass, amorphous glass, aluminum or NiP coated AlMg. The heat sink layer 78 can have a thickness of from about 10 nm to about 1000 nm, and may be made of any suitable material such as Cu, Ag, Al, Au, CuZr, CoFe, FeCoB, FeAlN, FeAlSi, NiFe, CoZrNb or FeTaN. The heat sink layer 78 may also comprise a plurality of laminated layers. A protective and/or lubricating layer 82 can be provided on the recording layer.
  • The composite thin film magnetic recording layer includes a first (or bottom) layer 84, which in this example is a granular layer having magnetic grains 86, that are separated by a decoupling material 88, which can be an oxide. The composite magnetic recording film further includes a second layer (or top) 90 that is a substantially continuous layer. The second layer can have magnetic grains 92 that are larger than the grains of the first layer. The grains 92 of layer 90 can also be separated by an oxide 94. In one example, layer 84 can have a thickness in the range of about 2 nm to about 30 nm, and layer 90 can have a thickness in the range of about 0.5 nm to about 30 nm. Layers 84 and 90 form a first bilayer structure. Layer 90 can be a continuous layer or a discontinuous layer. As used herein, a continuous layer includes magnetic grains that are more exchange coupled, with less or no oxide doping used as grain segregation, and discontinuous layer includes magnetic grains that are less exchange coupled, with more oxide doping used as grain segregation.
  • The composite thin film magnetic recording layer includes additional layers 96 and 98 that can be similar to layer 84, and layers 100 and 102 that can be similar to layer 90. In this example layer 96 is a granular layer having magnetic grains 104, that are separated by a decoupling material 106, which can be an oxide, and layer 98 is a granular layer having magnetic grains 108, that are separated by a decoupling material 110, which can be an oxide. Layer 100 can be a granular layer having magnetic grains 112, that are separated by a decoupling material 114, which can be an oxide, and layer 102 can be a granular layer having magnetic grains 116, that are separated by a decoupling material 118, which can be an oxide. Layers 96 and 100 form a second bilayer structure, and layers 98 and 102 form a third bilayer structure.
  • Layers 84, 94 and 96 are high Ku, high Tc, layers having a granular structure that is thermally unstable in the absence of magnetic coupling through layers 90, 100 and 102. Layers 90, 100 and 102 are low Tc layers, having grains that are continuously exchange coupled with each other at temperatures below the recording temperature. Layers 90, 100 and 102 are referred to as exchange coupling layers.
  • Optional exchange coupling control layers 120, 122, 124, 126 and 128 may be provided between the layers to allow tuning of the interlayer exchange coupling. The thickness of the optional exchange coupling control layers can be changed to control the amount of exchange coupling between the first and second layers. The exchange coupling control layers can have a thickness of about 0 nm to about 5 nm, and can be made of, for example, Pt, Ir, Rh, Pd or Ru.
  • The seed layer can have a thickness of from about 1 nm to about 50 nm and may be used to control properties such as orientation and grain size of the subsequently deposited layers. For example, the seed layer may be a face centered cubic material such as Pt which controls the orientation of layer 84, or a material such as Ru or Rh which controls grain size and facilitates epitaxial growth of the subsequently deposited layers, or a combination thereof. The seed layer may be made of one or more layers of material such as CoCr, CoCrRu, Ru, Pt, Pd, Rh, Ta, TiC, indium tin oxide (ITO), AlN, ZnO or another metal oxide. The protective layer 82 may be made of any suitable material such as diamond-like carbon.
  • In one aspect, the invention provides a composite HAMR storage media with a thin film recording layer including layers of magnetic material having different Curie temperatures and different intergranular exchange coupling. The recording layer in the storage media includes at least two different functional (i.e., magnetic) components. The magnetic component of layers 84, 96 and 98 can be, for example, Co3Pt, CoXPt alloy, CoX/Pt multilayer, CoXPd alloy, CoX/Pd multilayer, FePt, FeYPt alloy, or TbFeCo, wherein X can be, for example, Cr, B, Ni, Ta, etc., and Y can be, for example, Cu, Ni, Co, B, Ag, Au, Mn, etc. Since the Curie temperatures are material dependent, the layers can be constructed to have different Curie temperatures by using different compositions. Grain sizes can be between about 1 nm and about 10 nm in layers 84, 96 and 98, and between about 1 nm and about 1000 nm in layers 90, 100 and 102. These grain sizes are in-plane dimensions that approximate the diameter of the grains, although the grains are not truly circular.
  • In the example of FIG. 3, the high Ku, high Tc, layers 84, 96 and 98 have high anisotropy and smaller grains, and are thermally unstable by themselves at storage temperatures (or room temperature (RT)), while low Tc layers 90, 100 and 102 have grains with comparable (or smaller) anisotropy but much larger intergranular exchange coupling. Intergranular exchange coupling is the magnetic energy resulting from the magnetic interaction of the granular magnetic material. In each layer the grains are positioned in a plane and extend through the plane thickness. Since the magnetic coupling is a very short range interaction, the interaction energy is determined by properties of the layer's microstructure and specifically the grain boundaries.
  • At the recording temperature, the low Tc layers (in this example, layers 90, 100 and 102) are heated to a temperature above the Curie temperature and become non-magnetic. Hence coupling between grains of the high Tc layers through the low Tc layers is smaller at recording temperatures than at storage temperatures. However, at storage temperatures the thermal stability of the multilayer media is enhanced due to increased intergranular exchange coupling between grains of the high Tc layers, through the low Tc layers.
  • The high Tc, high Ku grains can be small (e.g., 5 nm) with a well-decoupled granular microstructure. The substantially continuous layers (in this example, layers 90, 100 and 102) are the low Tc magnetic layers that can be epitaxially grown on top of the high Tc layers; they also allow the next high Tc layer to be grown epitaxially.
  • Generally speaking, high Ku materials have higher Tc's. The strong relationship between Tc and magnetic anisotropy (Ku) of magnetic materials is also observed in Co/Pt multilayer systems. The high Tc layers can therefore be constructed of multilayers such as Co/Pt.
  • FIG. 4 is a side view of a multilayer structure 130 that can be used for the layers of the media of FIG. 3. The multilayer structure 130 includes a plurality of layers 132, which can be, for example, Co/Pt layers. Magnetic grains 134 in the layers are separated by an oxide 136. In Co/Pt multilayer systems, the Tc and Ku of the Co/Pt multilayer structure 130 can be changed by varying relative thickness of Co and Pt layers.
  • The individual high Tc and high Ku grains are thermally unstable at the recording temperature and within the time scale of the writing. At lower temperatures these thermally unstable grains are coupled with each other laterally and vertically through the adjacent low Tc layer. At recording temperatures (i.e., Twrite>the low Tc) the high Tc grains are superparamagnetic since the exchange adhesion layers (i.e., the low Tc layers) become paramagnetic. Then when the applied writing field is larger than the dynamic saturation field of the storage media, the direction of magnetization of the magnetic grains subjected to the write field will align with the applied write field.
  • In one example, both the high Tc and low Tc layers can each be constructed using Co/Pt multilayers. Such Co/Pt multilayers are suitable for HAMR storage media, because the Ku of the high Tc multilayer is about 1×107 erg/cc at Tc=1000 K, and 3×106 erg/cc at Tc=650 K. If the high Ku multilayer grain size is about 6 nm, with a thickness of about 2-3 nm, the grains would be thermally unstable at a HAMR writing temperature within an expected writing time scale.
  • A significant advantage of this media design is that the writing temperature is much lower than the high Tc. Consequently the magnetic saturation (Ms) of the high Tc layer is still very high. The effect of magnetic switching (i.e., the Zeeman energy) is significantly higher than would be the case for writing at the Curie temperature, where Ms is just above zero.
  • FIG. 5 is a schematic diagram that illustrates switching in a magnetic recording film in accordance with an aspect of the invention. Item 140 represents a bit in a magnetic recording film 142 having three high Tc layers 144, 146 and 148, and three low Tc layers 150, 152 and 154. The high Tc layers include a plurality of magnetic grains 156. The temperature of the film is initially below the Curie temperature of the low Tc layers, and all of the grains 156 have the same direction of magnetization as illustrated by the arrows 158, and the direction of magnetization of the low Tc layers is also fixed, in this case in a vertical direction.
  • Item 160 represents a bit in the magnetic recording film 142, which has been heated above the Curie temperature of the low Tc layers. At this temperature, the low Tc layers are paramagnetic and the grains of the high Tc layers are no longer magnetically coupled through the low Tc layers. Thus the directions of magnetization in the grains 156 are not uniform.
  • It is desirable that the direction of magnetization of substantially every magnetic grain in a recorded bit switches to a desired direction without freezing the magnetization of some of the grains in the wrong direction. Item 162 represents a bit in the magnetic recording film 142 when it is subjected to an external magnetic field 164, which can be a write field from a magnetic recording head. The magnetization of all (or in a practical example, substantially all) of the grains 156 aligns with the applied magnetic field. Then the film is allowed to cool, and the magnetization of all (or substantially all) of the grains 156 remains fixed in the new direction, as illustrated in bit 166.
  • FIG. 6 is a graph of coercivity Hc versus thickness of high Tc, high Ku Co/Pt multilayer films. Note that for layer thicknesses beyond 12 nm, the Hc does not increase. This indicates the basic coherent switching unit is around 12 nm high for a column about 6 nm in diameter. The diameter of the grains can be estimated to be about 6 nm based on experience of past test results.
  • Using the structure of FIGS. 3 and 4 as a test structure wherein the layers are constructed as Co/Pt multilayers, when the thickness of the granular high Ku, high Tc Co/Pt multilayer is reduced from about 24 nm to about 2 nm, the static MOKE Hc of the films decreases dramatically as each individual grain becomes thermally unstable.
  • The hysteresis loops of the 11.8 nm and 2.9 nm samples are shown in FIGS. 7 and 8 respectively. In one embodiment, the full structure of the films is: Glass substrate\Ta 3 nm\RuCr 10 nm\Ru+ZrO 2 15 nm\(Co/Pt)×16+Nb2O5 20 vol %\carbon overcoat. The Ta and RuCr layers are seed layers. The Ru+ZrO2 layer is a low Tc layer interlayer that provides a template for smaller grains. A multilayer with 16 repeats (i.e., 16 bilayers adjacent to each other) can be used in a media with an 11.8 nm thickness, as shown in FIG. 7, and a multilayer with 4 repeats can be used in a media with a 2.9 nm thickness, as shown in FIG. 8.
  • FIGS. 9-12 are hysteresis curves that illustrate the magnetic properties of various storage media. In FIGS. 7-13, the curve with open symbols is the MOKE loop without background correction, and the solid line curve is the true MOKE loop after linear background correction.
  • FIG. 7 shows the MOKE hysteresis loops of a single granular high Ku Co/Pt layer having a thickness of 11.8 nm. FIG. 8 shows the MOKE hysteresis loops of a single granular high Ku Co/Pt structure having a thickness of 2.9 nm. It can be seen that the grains in the 11.8 nm thick films are well decoupled. The value of Hc−Hn is 6.8 kOe, where Hn is the nucleation field. This is equal to a 4πMs value of 7.2 kOe for the sample assuming that Ms is 600 emu/cc. Therefore there is very little exchange coupling between the grains. It also can be seen that the thinner sample becomes superparamagnetic at room temperature within the time scale of MOKE measurement. The loop cannot keep the full remanence. Neither does it have a high coercivity.
  • Hysteresis curves for four different configurations of LECA media having the structure of FIG. 3 are shown in FIGS. 9-12. The high Ku multilayer is fixed at 2.9 nm where an individual layer of such multilayer would be superparamagnetic. FIG. 9 shows the MOKE hysteresis loop of LECA media with an exchange layer thickness of 3.1 nm. FIG. 10 shows the MOKE hysteresis loop of a LECA media with an exchange layer thickness of 2.3 nm. FIG. 11 shows the MOKE hysteresis loop of a LECA media with an exchange layer thickness of 1.6 nm. FIG. 12 shows the MOKE hysteresis loop of a LECA media with an exchange layer thickness of 0.8 nm.
  • FIG. 13 shows the MOKE hysteresis loop of a high Tc multilayer that has the same thickness of high Tc multilayer in the LECA media in FIGS. 9-12, but without an exchange coupling layer.
  • In the examples shown in FIGS. 9-13, the thickness of the exchange coupling adhesion layer is reduced from about 3 nm to about 0 nm to demonstrate the exchange coupling effect in the LECA media. As it can be seen in FIGS. 7-13, the exchange layer gets thinner, the Hn of the media becomes smaller, indicating the whole media becomes less thermally stable.
  • Granular, well-decoupled, high Tc layers can be fabricated for use in data storage media. In one example of a multilayer structure, the grains can be epitaxially grown judging in the (111) orientation.
  • In one example, when the high Tc layer is 3 nm thick, it is thermally unstable. However, when three layers of the 3 nm thick high Tc are laminated with the low Tc layers in the configuration shown in FIG. 3, they are very thermally stable.
  • FIG. 14 shows thermal stability factor KuV/kBT of the high Tc layer versus a number of Co/Pt bilayers. With 4 bilayers corresponding to a 2.9 nm thickness, and 16 bilayers corresponding to a 11.8 nm thickness, at N=4, KuV/kT(300K)˜20, which would mean that the thermal stability factor will become less than 10 when it is heated above 600 K. This will allow switching of the grain at a small fraction (e.g., ¼ to 1/10) of the anisotropy field of the high Tc layer, assuming a switching frequency f0 of 30 GHz and write speed of 1 ns.
  • FIG. 15 shows that the dynamic coercivity Ho starts to drop when the number (N) of repeated bilayers is less than 10 (i.e., N<10). This means the low Ku/kT ratio takes effect in a short time scale even at room temperature.
  • MFM images on Laminated Exchange Coupling Adhesion (LECA) media show that the domain (e.g., magnetic cluster) size in the ac-erased state varies with the change of media composition (i.e., low Tc, high Tc and oxide), which is due to the change of effective coupling.
  • Without an oxide in the multilayers, the film becomes very strongly exchange coupled. Qualitatively speaking, the high Tc multilayer with the oxide has the smallest switching units, and the low Tc with the oxide has larger switching units. That is, the switching cluster size of LECA is less than, or equal to that of the low Tc oxide media. This is the case at room temperature, not necessarily the case at writing temperature since the coupled low Tc media will be heated above Tc and hence is non-magnetic, reducing the intergranular exchange coupling.
  • In one aspect, the invention provides a HAMR media, which fully utilizes the Ku potential of a magnetic material system. It can be switched by HAMR at a lubricant friendly temperature, which is lower than the Tc of the magnetic material.
  • Another advantage of the design is that the high Ku grains possess a fairly high magnetic moment at the temperature of writing. As a result, a magnetic writer can exert a much stronger force to switch the grains when compared with Tc writing where the moment is close to zero.
  • In one example, the invention provides a storage media having a plurality of bilayers, each including a first magnetic layer having a high Tc and a high Ku, positioned adjacent to a second magnetic layer having a low Tc. Such a structure is sensitive to thermal magnetic writing below the Tc of high Ku grains in the first layer. Prior to heating the media, the direction of magnetization of the magnetic grains in the first layer is stable because the magnetic grains in the first layer are magnetically coupled to each other through the second layer. When the second layer is heated above its Curie temperature, the second layer changes to a paramagnetic state. This reduces the exchange coupling between grains in the high Ku layer and those grains become superparamagnetic. Consequently, an applied magnetic field reverses the direction of magnetization of the superparamagnetic high Ku grains.
  • In another aspect, the invention provides a data storage media including at least two layers of high Tc, high Ku materials positioned on opposite sides of a layer of low Tc materials. For example, in FIG. 4, high Tc, high Ku layers 84 and 96 are positioned on opposite sides of a layer 90 of low Tc materials.
  • In another aspect, the invention provides a data storage media including a layer of high Tc, high Ku materials positioned between two layers of low Tc materials. For example, in FIG. 4, high Tc, high Ku layer 96 is positioned between layers 90 and 100 of low Tc materials.
  • The media of this invention utilizes the temperature effects on the high Ku materials to allow writing to the media below the Curie temperature of the high Ku material. Another advantage of the design is that the high Ku grains possess a fairly high magnetic moment at the temperature of writing. As a result, the magnetic writer can exert a much stronger force to switch the grains compared with writing at a temperature near the Curie temperature, where the moment is close to zero.
  • In one aspect, the apparatus of this invention uses thermally activated switching of small magnetic units, which are vertically exchange decoupled from other layers. The invention encompasses bilayer structures and other multilayer structures, including trilayer structures including a layer of low Tc material between two layers of high Tc material, or a layer of high Tc material between two layers of low Tc material. By using small magnetic units, the thermally assisted switching effect is enhanced. When used in a data storage medium, the recording temperature is reduced due to the smaller switching volume achieved by using vertically decoupled laminations at elevated temperatures.
  • While the invention has been described in terms of several examples, it will be apparent to those skilled in the art that various changes can be made to the described examples without departing from the scope of the invention as set forth in the claims.

Claims (22)

1. An apparatus comprising:
a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and magnetic grains of the first layer are unstable when the second layer of magnetic material is heated above the second Curie temperature.
2. The apparatus of claim 1, further comprising:
an exchange coupling control layer positioned between the first and second layers.
3. The apparatus of claim 2, wherein the exchange coupling control layer has a thickness between about 0 nm and about 5 nm.
4. The apparatus of claim 1, wherein:
the magnetic grains in the first layer have diameters of between about 1 nm and about 10 nm, and magnetic grains in the second layer have diameters of between about 1 nm and about 1000 nm.
5. The apparatus of claim 1, wherein:
the first layer has a thickness between about 2 nm and about 30 nm, and the second layer has a thickness between about 0.5 nm and about 30 nm.
6. The apparatus of claim 1, wherein:
the first layer of magnetic material in each of the bilayers comprises a multilayer structure.
7. The apparatus of claim 1, wherein:
the first layer in each of the bilayers includes a first plurality of grains of magnetic material having a first intergranular exchange coupling; and
the second layer in each of the bilayers includes a second plurality of grains of magnetic material having a second intergranular exchange coupling, wherein the second intergranular exchange coupling is larger than the first intergranular exchange coupling.
8. The apparatus of claim 1, wherein in each of the bilayers, the magnetic grains of the first layer are smaller than magnetic grains of the second layer and the first and second layers are exchange coupled with each other.
9. The apparatus of claim 1, wherein in each of the bilayers, the magnetic anisotropy of the first layer is greater than the magnetic anisotropy of the second layer.
10. The apparatus of claim 1, wherein in each of the bilayers, the first layer includes decoupling material between magnetic grains.
11. The apparatus of claim 10, wherein the decoupling material comprises an oxide.
12. The apparatus of claim 1, further comprising:
a substrate; and
a seed layer deposited on the substrate, wherein the first layer of one of the bilayers is positioned on the seed layer.
13. The apparatus of claim 1, wherein:
the first layer includes one or more of Co3Pt, a CoXPt alloy, a CoX/Pt multilayer, a CoXPd alloy, a CoX/Pd multilayer, FePt, an FeYPt alloy, or TbFeCo, wherein X includes one or more of Cr, B, Ni and Ta, and wherein Y includes one or more of Cu, Ni, Co, B, Ag, Au and Mn.
14. An apparatus comprising:
first and second layers of magnetic materials positioned on opposite sides of a third layer of magnetic material, wherein the first and second layers have Curie temperatures higher than the Curie temperature of the third layer, and wherein magnetic grains of the first and second layers are unstable when the third layer of magnetic material is heated above its Curie temperatures.
15. The apparatus of claim 14, further comprising:
an exchange coupling control layer positioned between the first layer and the third layer.
16. The apparatus of claim 15, wherein the exchange coupling control layer has a thickness between about 0 nm and about 5 nm.
17. The apparatus of claim 1, wherein:
the magnetic grains in the first and second layers have diameters of between about 1 nm and about 10 nm, and magnetic grains in the third layer have diameters of between about 1 nm and about 1000 nm.
18. An apparatus comprising:
first and second layers of magnetic materials positioned on opposite sides of a third layer of magnetic material, wherein the first and second layers have Curie temperatures lower than the Curie temperature of the third layer, and wherein magnetic grains of the third layer are unstable when the first and second layers of magnetic material are heated above their Curie temperatures.
19. The apparatus of claim 18, further comprising:
an exchange coupling control layer positioned between the first layer and the third layer.
20. The apparatus of claim 19, wherein the exchange coupling control layer has a thickness between about 0 nm and about 5 nm.
21. An apparatus comprising:
a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and the magnetic grains in the first layer have diameters of between about 1 nm and about 10 nm, and magnetic grains in the second layer have diameters of between about 1 nm and about 1000 nm.
22. An apparatus comprising:
a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and the first and second layers of magnetic material are magnetically coupled to each other at room temperature and magnetically uncoupled when one of the layers of magnetic material is heated above its Curie temperature.
US11/835,476 2006-01-20 2007-08-08 Laminated exchange coupling adhesion (LECA) media for heat assisted magnetic recording Active 2027-10-31 US8241766B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US11/835,476 US8241766B2 (en) 2006-01-20 2007-08-08 Laminated exchange coupling adhesion (LECA) media for heat assisted magnetic recording
SG200806015-4A SG150469A1 (en) 2007-08-08 2008-08-05 Laminated exchange coupling adhesion (leca) media for heat assisted magnetic recording
JP2008203942A JP4710087B2 (en) 2007-08-08 2008-08-07 Laminated exchange coupled attachment (LECA) media for thermally assisted magnetic recording

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/336,799 US7678476B2 (en) 2006-01-20 2006-01-20 Composite heat assisted magnetic recording media with temperature tuned intergranular exchange
US11/835,476 US8241766B2 (en) 2006-01-20 2007-08-08 Laminated exchange coupling adhesion (LECA) media for heat assisted magnetic recording

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/336,799 Continuation-In-Part US7678476B2 (en) 2006-01-20 2006-01-20 Composite heat assisted magnetic recording media with temperature tuned intergranular exchange

Publications (3)

Publication Number Publication Date
US20090040644A1 true US20090040644A1 (en) 2009-02-12
US20110235205A9 US20110235205A9 (en) 2011-09-29
US8241766B2 US8241766B2 (en) 2012-08-14

Family

ID=40346259

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/835,476 Active 2027-10-31 US8241766B2 (en) 2006-01-20 2007-08-08 Laminated exchange coupling adhesion (LECA) media for heat assisted magnetic recording

Country Status (3)

Country Link
US (1) US8241766B2 (en)
JP (1) JP4710087B2 (en)
SG (1) SG150469A1 (en)

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100020431A1 (en) * 2008-07-22 2010-01-28 Tdk Corporation Heat-assisted thin-film magnetic head and heat-assisted magnetic recording method
US20100053811A1 (en) * 2008-08-28 2010-03-04 Fujitsu Limited Magnetic storage apparatus and magnetic storage medium
US20100182714A1 (en) * 2008-12-01 2010-07-22 Showa Denko K.K. Thermal-assist magnetic recording medium and magnetic recording and reproducing apparatus
US8081542B1 (en) 2010-11-09 2011-12-20 Hitachi Global Technologies Netherlands B.V. Thermally-assisted recording (TAR) disk drive with patterned multilevel media and laser with power modulation
US20120186974A1 (en) * 2009-12-15 2012-07-26 Hitachi Global Storage Technologies Netherlands B.V. Perpendicular magnetic recording media with oxide-containing exchange coupling layer
US20120232831A1 (en) * 2011-03-10 2012-09-13 Tdk Corporation Method of estimating curie temperature distribution in a magnetic recording layer
US20120251845A1 (en) * 2011-03-31 2012-10-04 Seagate Technology Llc Exchange coupled magnetic elements
CN102737651A (en) * 2011-03-31 2012-10-17 西部数据传媒公司 Recording media with multiple exchange coupled magnetic layers
US8404369B2 (en) * 2010-08-03 2013-03-26 WD Media, LLC Electroless coated disks for high temperature applications and methods of making the same
US8507114B2 (en) * 2011-06-30 2013-08-13 Seagate Technology Llc Recording layer for heat assisted magnetic recording
US8565050B1 (en) 2011-12-20 2013-10-22 WD Media, LLC Heat assisted magnetic recording media having moment keeper layer
US8585811B2 (en) 2010-09-03 2013-11-19 Omg Electronic Chemicals, Llc Electroless nickel alloy plating bath and process for depositing thereof
US8743666B1 (en) * 2011-03-08 2014-06-03 Western Digital Technologies, Inc. Energy assisted magnetic recording medium capable of suppressing high DC readback noise
US8742518B2 (en) 2011-03-31 2014-06-03 Seagate Technology Llc Magnetic tunnel junction with free layer having exchange coupled magnetic elements
US8748017B2 (en) 2010-07-23 2014-06-10 Kabushiki Kaisha Toshiba Magnetic recording medium
US20140377590A1 (en) * 2012-03-22 2014-12-25 Fuji Electric Co., Ltd. Magnetic recording medium for heat-assisted magnetic recording
US8947987B1 (en) 2013-05-03 2015-02-03 WD Media, LLC Systems and methods for providing capping layers for heat assisted magnetic recording media
US20150154995A1 (en) * 2013-07-09 2015-06-04 Seagate Technology Llc Method for fabricating a patterned composite structure
US9177585B1 (en) 2013-10-23 2015-11-03 WD Media, LLC Magnetic media capable of improving magnetic properties and thermal management for heat-assisted magnetic recording
US20160064022A1 (en) * 2014-08-29 2016-03-03 Seagate Technology Llc Low Power Thermally Assisted Data Recording Media
US9520151B2 (en) 2009-02-12 2016-12-13 Seagate Technology Llc Multiple layer FePt structure
CN107112031A (en) * 2015-07-02 2017-08-29 富士电机株式会社 Magnetic recording media
US9779771B1 (en) * 2015-07-28 2017-10-03 Seagate Technology Llc Capping layer for magnetic recording stack
US9990951B2 (en) * 2016-02-23 2018-06-05 Seagate Technology Llc Perpendicular magnetic recording with multiple antiferromagnetically coupled layers
US20180286441A1 (en) * 2017-03-28 2018-10-04 Seagate Technology Llc Heat assisted magnetic recording (hamr) media with exchange tuning layer
US10115428B1 (en) 2013-02-15 2018-10-30 Wd Media, Inc. HAMR media structure having an anisotropic thermal barrier layer
US10276202B1 (en) 2018-04-23 2019-04-30 Western Digital Technologies, Inc. Heat-assisted magnetic recording (HAMR) medium with rhodium or rhodium-based alloy heat-sink layer
US10714138B2 (en) 2015-09-17 2020-07-14 Fuji Electric Co., Ltd. Perpendicular magnetic recording medium
US10741207B2 (en) 2015-08-24 2020-08-11 Fuji Electric Co., Ltd. Magnetic recording medium having an FePtRh magnetic layer
US11087794B2 (en) 2016-06-23 2021-08-10 Fuji Electric Co., Ltd. Magnetic recording medium having magnetic layer with a granular structure
US20230178106A1 (en) * 2021-12-08 2023-06-08 Seagate Technology Llc Magnetic stack including non-magnetic seed layer for hard disk drive media

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8920947B2 (en) * 2010-05-28 2014-12-30 Headway Technologies, Inc. Multilayer structure with high perpendicular anisotropy for device applications
JP5786347B2 (en) * 2011-02-02 2015-09-30 富士電機株式会社 Magnetic recording medium for thermally assisted recording apparatus and method for manufacturing the same
US8374060B2 (en) * 2011-03-11 2013-02-12 Tdk Corporation Thermally-assisted magnetic recording method for writing data on a hard disk medium
US8630060B2 (en) 2012-03-09 2014-01-14 HGST Netherlands B.V. Thermally enabled exchange coupled media for magnetic data recording
MY160495A (en) * 2013-12-10 2017-03-15 Fuji Electric Co Ltd Perpendicular magnetic recording medium
SG11201602691UA (en) * 2014-01-23 2016-05-30 Fuji Electric Co Ltd Perpendicular magnetic recording medium
SG11201602850SA (en) 2014-04-03 2016-05-30 Fuji Electric Co Ltd Magnetic recording medium
US9685184B1 (en) 2014-09-25 2017-06-20 WD Media, LLC NiFeX-based seed layer for magnetic recording media
US9558777B2 (en) 2014-11-26 2017-01-31 HGST Netherlands B.V. Heat assisted magnetic recording (HAMR) media having a highly ordered crystalline structure
US9934808B2 (en) 2015-03-11 2018-04-03 Western Digital Technologies, Inc. Magnetic recording medium with multiple exchange coupling layers and small grain magnetic layers
US10249335B2 (en) * 2016-09-22 2019-04-02 Seagate Technology Llc Composite HAMR media structure for high areal density
US9984709B1 (en) * 2017-03-22 2018-05-29 Seagate Technology Llc Heat assisted magnetic recording (HAMR) media with thermal exchange control layer of lower curie temperature
US9984713B1 (en) 2017-06-06 2018-05-29 Seagate Technology Llc Heat assisted magnetic recording media with enhanced tuning exchange coupling
US10269381B1 (en) * 2017-10-25 2019-04-23 Seagate Technology Llc Heat assisted magnetic recording with exchange coupling control layer
JP2022150658A (en) * 2021-03-26 2022-10-07 昭和電工株式会社 Magnetic recording medium and magnetic storage device

Citations (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208797A (en) * 1989-11-14 1993-05-04 Mitsubishi Denki Kabushiki Kaisha Magneto-optical recording media and apparatus
US5233578A (en) * 1988-12-28 1993-08-03 Canon Kabushiki Kaisha Method of recording information on a recording medium having at least two magnetic layers
US5481508A (en) * 1989-09-05 1996-01-02 Mitsubishi Denki Kabushiki Kaisha Magneto-optic recording medium method of manufacturing the same and magneto-optic recording system
US5503924A (en) * 1988-12-13 1996-04-02 Canon Kabushiki Kaisha Exchange-coupled magnetooptical recording medium with first layer having smaller vertical orientation saturation magnetization than in-plane orientation saturation magnetization of second layer
US5508982A (en) * 1994-09-02 1996-04-16 Minnesota Mining And Manufacturing Company Method for recording on a magneto-optic storage medium having two recording layers
US5599619A (en) * 1991-10-18 1997-02-04 International Business Machines Corporation Write once magneto-optic media and system
US5612131A (en) * 1993-04-26 1997-03-18 International Business Machines Corporation Composite magneto-optic memory and media
US5639567A (en) * 1994-03-09 1997-06-17 Imation Corp. Exchange-coupled direct overwrite magneto-optic recording media
US6011664A (en) * 1995-08-31 2000-01-04 Carnegie Mellon University Techniques for ultrahigh density writing with a probe on erasable magnetic media
US6017619A (en) * 1997-01-06 2000-01-25 Korea Advanced Institute Of Science And Technology Ni/Pt multilayers for magneto-optical recording media
US6200673B1 (en) * 1989-11-13 2001-03-13 Hitachi, Ltd. Magneto-optical recording medium
US20010051287A1 (en) * 2000-06-12 2001-12-13 Akira Kikitsu Magnetic recording medium and magnetic recording apparatus
US6388956B1 (en) * 1998-11-27 2002-05-14 Sharp Kabushiki Kaisha Magneto-optical storage media
US6424601B1 (en) * 1996-07-12 2002-07-23 Hitachi Maxell, Ltd. Magneto-optical recording media having an auxiliary magnetic layer
US6468670B1 (en) * 2000-01-19 2002-10-22 International Business Machines Corporation Magnetic recording disk with composite perpendicular recording layer
US6534205B2 (en) * 1999-03-23 2003-03-18 Fujitsu Limited Magnetic storage medium
US6534203B2 (en) * 1998-04-02 2003-03-18 Sony Corporation Magnetic recording medium
US6534204B1 (en) * 1999-03-23 2003-03-18 Fujitsu Limited Magnetic storage medium
US6545955B1 (en) * 1999-07-29 2003-04-08 Sharp Kabushiki Kaisha Magneto-optic storage media and methods of reproducing the same
US6551728B1 (en) * 1999-09-30 2003-04-22 Fujitsu Limited Magnetic recording medium and magnetic storage apparatus
US20030143433A1 (en) * 2000-05-29 2003-07-31 Hitachi, Ltd. Perpendicular-magnetic recording media and magnetic recording apparatus
US6602621B2 (en) * 2000-12-28 2003-08-05 Hitachi Maxell, Ltd. Magnetic recording medium, method for producing the same, and magnetic storage apparatus
US6671234B1 (en) * 1999-06-28 2003-12-30 Sharp Kabushiki Kaisha Magneto-optical storage media and method of reproducing the same
US6754020B1 (en) * 1999-09-02 2004-06-22 Kabushiki Kaisha Toshiba Magnetic recording media and magnetic recording/reproduction apparatuses
US6777112B1 (en) * 2000-10-10 2004-08-17 Seagate Technology Llc Stabilized recording media including coupled discontinuous and continuous magnetic layers
US20040185306A1 (en) * 2001-06-04 2004-09-23 Coffey Kevin Robert 'Thermal spring' magnetic recording media for writing using magnetic and thermal gradients
US7060375B2 (en) * 2002-09-19 2006-06-13 Samsung Electronics Co., Ltd. Perpendicular magnetic recording media
US20070172705A1 (en) * 2006-01-20 2007-07-26 Seagate Technology Llc Composite heat assisted magnetic recording media with temperature tuned intergranular exchange
US20100149676A1 (en) * 2008-07-18 2010-06-17 The Regents Of The University Of California Three-dimensional magnetic recording

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2503708B2 (en) 1989-11-14 1996-06-05 三菱電機株式会社 Magneto-optical recording medium and device
JPH07334878A (en) 1994-06-10 1995-12-22 Canon Inc Magneto-optical recording medium and reproducing methof for information using that medium
US5593790A (en) 1994-12-29 1997-01-14 Imation Corp. Interference super-resolution using two magnetic layer construction
JP3249713B2 (en) 1995-06-09 2002-01-21 シャープ株式会社 Magneto-optical recording medium and recording method thereof
JPH1091938A (en) 1996-09-19 1998-04-10 Canon Inc Magnetic recording medium, reproducing method and reproducing device
JP2005310368A (en) 2000-06-12 2005-11-04 Toshiba Corp Magnetic recording medium and magnetic recording device
KR100374793B1 (en) 2001-01-03 2003-03-04 삼성전자주식회사 Perpendicular magnetic recording media
US6950260B2 (en) 2001-06-04 2005-09-27 Hitachi Global Technologies Netherlands B.V. Thermally assisted magnetic recording system and method of writing using magnetic and thermal gradients
US20030108721A1 (en) 2001-12-11 2003-06-12 Fullerton Eric E. Thermally - assisted magnetic recording disk with recording layer exchange- coupled to antiferromagnetic-to-ferromagnetic switching layer
US20040166371A1 (en) 2003-02-26 2004-08-26 Berger Andreas Klaus Dieter Magnetic recording media with write-assist layer
US20050106422A1 (en) 2003-11-19 2005-05-19 Seagate Technology Llc Thin film with exchange coupling between magnetic grains of the thin film
US7158346B2 (en) 2003-12-23 2007-01-02 Seagate Technology Llc Heat assisted magnetic recording film including superparamagnetic nanoparticles dispersed in an antiferromagnetic or ferrimagnetic matrix
JP2005190552A (en) 2003-12-25 2005-07-14 Hitachi Global Storage Technologies Netherlands Bv Magnetic recording medium
JP2006209903A (en) 2005-01-31 2006-08-10 Hitachi Maxell Ltd Information recording medium

Patent Citations (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5503924A (en) * 1988-12-13 1996-04-02 Canon Kabushiki Kaisha Exchange-coupled magnetooptical recording medium with first layer having smaller vertical orientation saturation magnetization than in-plane orientation saturation magnetization of second layer
US5233578A (en) * 1988-12-28 1993-08-03 Canon Kabushiki Kaisha Method of recording information on a recording medium having at least two magnetic layers
US5481508A (en) * 1989-09-05 1996-01-02 Mitsubishi Denki Kabushiki Kaisha Magneto-optic recording medium method of manufacturing the same and magneto-optic recording system
US5528565A (en) * 1989-09-05 1996-06-18 Mitsubishi Denki Kabushiki Kaisha Magneto-optic recording system
US6200673B1 (en) * 1989-11-13 2001-03-13 Hitachi, Ltd. Magneto-optical recording medium
US5208797A (en) * 1989-11-14 1993-05-04 Mitsubishi Denki Kabushiki Kaisha Magneto-optical recording media and apparatus
US5599619A (en) * 1991-10-18 1997-02-04 International Business Machines Corporation Write once magneto-optic media and system
US5793711A (en) * 1993-04-26 1998-08-11 International Business Machines Corporation Composite magneto-optic memory and media
US5612131A (en) * 1993-04-26 1997-03-18 International Business Machines Corporation Composite magneto-optic memory and media
US5639567A (en) * 1994-03-09 1997-06-17 Imation Corp. Exchange-coupled direct overwrite magneto-optic recording media
US5508982A (en) * 1994-09-02 1996-04-16 Minnesota Mining And Manufacturing Company Method for recording on a magneto-optic storage medium having two recording layers
US6011664A (en) * 1995-08-31 2000-01-04 Carnegie Mellon University Techniques for ultrahigh density writing with a probe on erasable magnetic media
US6424601B1 (en) * 1996-07-12 2002-07-23 Hitachi Maxell, Ltd. Magneto-optical recording media having an auxiliary magnetic layer
US6017619A (en) * 1997-01-06 2000-01-25 Korea Advanced Institute Of Science And Technology Ni/Pt multilayers for magneto-optical recording media
US6534203B2 (en) * 1998-04-02 2003-03-18 Sony Corporation Magnetic recording medium
US6707766B2 (en) * 1998-11-27 2004-03-16 Sharp Kabushiki Kaisha Magneto-optical storage media
US6388956B1 (en) * 1998-11-27 2002-05-14 Sharp Kabushiki Kaisha Magneto-optical storage media
US6534204B1 (en) * 1999-03-23 2003-03-18 Fujitsu Limited Magnetic storage medium
US6534205B2 (en) * 1999-03-23 2003-03-18 Fujitsu Limited Magnetic storage medium
US6671234B1 (en) * 1999-06-28 2003-12-30 Sharp Kabushiki Kaisha Magneto-optical storage media and method of reproducing the same
US6545955B1 (en) * 1999-07-29 2003-04-08 Sharp Kabushiki Kaisha Magneto-optic storage media and methods of reproducing the same
US6754020B1 (en) * 1999-09-02 2004-06-22 Kabushiki Kaisha Toshiba Magnetic recording media and magnetic recording/reproduction apparatuses
US6551728B1 (en) * 1999-09-30 2003-04-22 Fujitsu Limited Magnetic recording medium and magnetic storage apparatus
US6468670B1 (en) * 2000-01-19 2002-10-22 International Business Machines Corporation Magnetic recording disk with composite perpendicular recording layer
US20030143433A1 (en) * 2000-05-29 2003-07-31 Hitachi, Ltd. Perpendicular-magnetic recording media and magnetic recording apparatus
US20010051287A1 (en) * 2000-06-12 2001-12-13 Akira Kikitsu Magnetic recording medium and magnetic recording apparatus
US6777112B1 (en) * 2000-10-10 2004-08-17 Seagate Technology Llc Stabilized recording media including coupled discontinuous and continuous magnetic layers
US6602621B2 (en) * 2000-12-28 2003-08-05 Hitachi Maxell, Ltd. Magnetic recording medium, method for producing the same, and magnetic storage apparatus
US6815098B2 (en) * 2000-12-28 2004-11-09 Hitachi Maxell, Ltd. Magnetic recording medium, method for producing the same, and magnetic storage apparatus
US20040185306A1 (en) * 2001-06-04 2004-09-23 Coffey Kevin Robert 'Thermal spring' magnetic recording media for writing using magnetic and thermal gradients
US6881497B2 (en) * 2001-06-04 2005-04-19 Hitachi Global Storage Technologies Netherlands B.V. ‘Thermal spring’ magnetic recording media for writing using magnetic and thermal gradients
US7060375B2 (en) * 2002-09-19 2006-06-13 Samsung Electronics Co., Ltd. Perpendicular magnetic recording media
US20070172705A1 (en) * 2006-01-20 2007-07-26 Seagate Technology Llc Composite heat assisted magnetic recording media with temperature tuned intergranular exchange
US7678476B2 (en) * 2006-01-20 2010-03-16 Seagate Technology Llc Composite heat assisted magnetic recording media with temperature tuned intergranular exchange
US20100149676A1 (en) * 2008-07-18 2010-06-17 The Regents Of The University Of California Three-dimensional magnetic recording

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100020431A1 (en) * 2008-07-22 2010-01-28 Tdk Corporation Heat-assisted thin-film magnetic head and heat-assisted magnetic recording method
US7948710B2 (en) * 2008-07-22 2011-05-24 Tdk Corporation Heat-assisted thin-film magnetic head and heat-assisted magnetic recording method
US20100053811A1 (en) * 2008-08-28 2010-03-04 Fujitsu Limited Magnetic storage apparatus and magnetic storage medium
US8179637B2 (en) * 2008-08-28 2012-05-15 Toshiba Storage Device Corporation Magnetic storage apparatus having heated recording head
US20100182714A1 (en) * 2008-12-01 2010-07-22 Showa Denko K.K. Thermal-assist magnetic recording medium and magnetic recording and reproducing apparatus
US8705207B2 (en) 2008-12-01 2014-04-22 Showa Denko K.K. Thermal-assist magnetic recording medium and magnetic recording and reproducing apparatus
US9520151B2 (en) 2009-02-12 2016-12-13 Seagate Technology Llc Multiple layer FePt structure
US9899050B2 (en) 2009-02-12 2018-02-20 Seagate Technology Llc Multiple layer FePt structure
US20120186974A1 (en) * 2009-12-15 2012-07-26 Hitachi Global Storage Technologies Netherlands B.V. Perpendicular magnetic recording media with oxide-containing exchange coupling layer
US8747628B2 (en) * 2009-12-15 2014-06-10 HGST Netherlands B.V. Perpendicular magnetic recording media with oxide-containing exchange coupling layer
US8748017B2 (en) 2010-07-23 2014-06-10 Kabushiki Kaisha Toshiba Magnetic recording medium
US8404369B2 (en) * 2010-08-03 2013-03-26 WD Media, LLC Electroless coated disks for high temperature applications and methods of making the same
US8828482B1 (en) 2010-08-03 2014-09-09 WD Media, LLC Electroless coated disks for high temperature applications and methods of making the same
US8585811B2 (en) 2010-09-03 2013-11-19 Omg Electronic Chemicals, Llc Electroless nickel alloy plating bath and process for depositing thereof
US8081542B1 (en) 2010-11-09 2011-12-20 Hitachi Global Technologies Netherlands B.V. Thermally-assisted recording (TAR) disk drive with patterned multilevel media and laser with power modulation
US9001630B1 (en) 2011-03-08 2015-04-07 Western Digital Technologies, Inc. Energy assisted magnetic recording medium capable of suppressing high DC readback noise
US8743666B1 (en) * 2011-03-08 2014-06-03 Western Digital Technologies, Inc. Energy assisted magnetic recording medium capable of suppressing high DC readback noise
US20120232831A1 (en) * 2011-03-10 2012-09-13 Tdk Corporation Method of estimating curie temperature distribution in a magnetic recording layer
US8666692B2 (en) * 2011-03-10 2014-03-04 Tdk Corporation Method of estimating curie temperature distribution in a magnetic recording layer
US8742518B2 (en) 2011-03-31 2014-06-03 Seagate Technology Llc Magnetic tunnel junction with free layer having exchange coupled magnetic elements
US8481181B2 (en) * 2011-03-31 2013-07-09 Seagate Technology Llc Exchange coupled magnetic elements
CN102737651A (en) * 2011-03-31 2012-10-17 西部数据传媒公司 Recording media with multiple exchange coupled magnetic layers
US20120251845A1 (en) * 2011-03-31 2012-10-04 Seagate Technology Llc Exchange coupled magnetic elements
US9443544B1 (en) 2011-06-30 2016-09-13 Seagate Technology Llc Recording layer for heat assisted magnetic recording
US8507114B2 (en) * 2011-06-30 2013-08-13 Seagate Technology Llc Recording layer for heat assisted magnetic recording
US8565050B1 (en) 2011-12-20 2013-10-22 WD Media, LLC Heat assisted magnetic recording media having moment keeper layer
US9047880B1 (en) 2011-12-20 2015-06-02 WD Media, LLC Heat assisted magnetic recording method for media having moment keeper layer
US20140377590A1 (en) * 2012-03-22 2014-12-25 Fuji Electric Co., Ltd. Magnetic recording medium for heat-assisted magnetic recording
US9728218B2 (en) * 2012-03-22 2017-08-08 Fuji Electric Co., Ltd. Magnetic recording medium for heat-assisted magnetic recording
US10115428B1 (en) 2013-02-15 2018-10-30 Wd Media, Inc. HAMR media structure having an anisotropic thermal barrier layer
US8947987B1 (en) 2013-05-03 2015-02-03 WD Media, LLC Systems and methods for providing capping layers for heat assisted magnetic recording media
US9349402B2 (en) * 2013-07-09 2016-05-24 Seagate Technology Llc Apparatus including temperature-dependent exchange spring mechanism
US20150154995A1 (en) * 2013-07-09 2015-06-04 Seagate Technology Llc Method for fabricating a patterned composite structure
US9177585B1 (en) 2013-10-23 2015-11-03 WD Media, LLC Magnetic media capable of improving magnetic properties and thermal management for heat-assisted magnetic recording
US9940962B2 (en) * 2014-08-29 2018-04-10 Seagate Technology Llc Low power thermally assisted data recording media
US20160064022A1 (en) * 2014-08-29 2016-03-03 Seagate Technology Llc Low Power Thermally Assisted Data Recording Media
CN107112031A (en) * 2015-07-02 2017-08-29 富士电机株式会社 Magnetic recording media
US10304485B2 (en) * 2015-07-02 2019-05-28 Fuji Electric Co., Ltd. Magnetic recording medium
US9779771B1 (en) * 2015-07-28 2017-10-03 Seagate Technology Llc Capping layer for magnetic recording stack
US10741207B2 (en) 2015-08-24 2020-08-11 Fuji Electric Co., Ltd. Magnetic recording medium having an FePtRh magnetic layer
US10714138B2 (en) 2015-09-17 2020-07-14 Fuji Electric Co., Ltd. Perpendicular magnetic recording medium
US9990951B2 (en) * 2016-02-23 2018-06-05 Seagate Technology Llc Perpendicular magnetic recording with multiple antiferromagnetically coupled layers
US11087794B2 (en) 2016-06-23 2021-08-10 Fuji Electric Co., Ltd. Magnetic recording medium having magnetic layer with a granular structure
US20180286441A1 (en) * 2017-03-28 2018-10-04 Seagate Technology Llc Heat assisted magnetic recording (hamr) media with exchange tuning layer
US10276202B1 (en) 2018-04-23 2019-04-30 Western Digital Technologies, Inc. Heat-assisted magnetic recording (HAMR) medium with rhodium or rhodium-based alloy heat-sink layer
US20230178106A1 (en) * 2021-12-08 2023-06-08 Seagate Technology Llc Magnetic stack including non-magnetic seed layer for hard disk drive media
US11763845B2 (en) * 2021-12-08 2023-09-19 Seagate Technology Llc Magnetic stack including non-magnetic seed layer for hard disk drive media

Also Published As

Publication number Publication date
US20110235205A9 (en) 2011-09-29
JP4710087B2 (en) 2011-06-29
SG150469A1 (en) 2009-03-30
US8241766B2 (en) 2012-08-14
JP2009059461A (en) 2009-03-19

Similar Documents

Publication Publication Date Title
US8241766B2 (en) Laminated exchange coupling adhesion (LECA) media for heat assisted magnetic recording
US7862914B2 (en) Heatsink films for magnetic recording media
US7678476B2 (en) Composite heat assisted magnetic recording media with temperature tuned intergranular exchange
US9001630B1 (en) Energy assisted magnetic recording medium capable of suppressing high DC readback noise
US9443544B1 (en) Recording layer for heat assisted magnetic recording
JP5153575B2 (en) Thermally assisted magnetic recording medium and magnetic recording apparatus
US7201977B2 (en) Anti-ferromagnetically coupled granular-continuous magnetic recording media
JP5961490B2 (en) Magnetic recording medium and magnetic recording / reproducing apparatus
JP6145332B2 (en) Magnetic recording medium, magnetic storage device
JP6014385B2 (en) Magnetic recording medium and magnetic recording / reproducing apparatus
US7158346B2 (en) Heat assisted magnetic recording film including superparamagnetic nanoparticles dispersed in an antiferromagnetic or ferrimagnetic matrix
US8830629B2 (en) Thin film structure with controlled lateral thermal spreading in the thin film
JP2007059008A (en) Thermally assisted magnetic recording medium and magnetic recording and reproducing device
US10276202B1 (en) Heat-assisted magnetic recording (HAMR) medium with rhodium or rhodium-based alloy heat-sink layer
US20060188752A1 (en) Composite magnetic recording structure having a metamagnetic layer with field induced transition to ferromagnetic state
JP2008052869A (en) Thermally-assisted magnetic recording medium and magnetic recording and reproducing device
US10109309B1 (en) Heat-assisted magnetic recording (HAMR) medium with heat-sink layer having anisotropic thermal conductivity
US9824710B1 (en) Heat-assisted magnetic recording (HAMR) medium with thermal barrier layer in multilayered heat-sink structure
US11869556B2 (en) Heat-assisted magnetic recording (HAMR) medium with optical-coupling multilayer between the recording layer and heat-sink layer
US9601145B1 (en) Heat-assisted magnetic recording (HAMR) disk with multiple continuous magnetic recording layers
JP2018120649A (en) Magnetic recording media and magnetic recording device
US20080100964A1 (en) Magnetic recording system with medium having antiferromagnetic-to- ferromagnetic transition layer exchange-coupled to recording layer
JP2008108380A (en) Magnetic recording medium and magnetic recording device
US20060291100A1 (en) Thin film structure having a soft magnetic interlayer
US10796719B1 (en) Heat-assisted magnetic recording (HAMR) medium with multilayered overcoat

Legal Events

Date Code Title Description
AS Assignment

Owner name: SEAGATE TECHNOLOGY LLC, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LU, BIN;JU, GANPING;REEL/FRAME:019663/0663;SIGNING DATES FROM 20070626 TO 20070627

Owner name: SEAGATE TECHNOLOGY LLC, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LU, BIN;JU, GANPING;SIGNING DATES FROM 20070626 TO 20070627;REEL/FRAME:019663/0663

AS Assignment

Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT

Free format text: SECURITY AGREEMENT;ASSIGNORS:MAXTOR CORPORATION;SEAGATE TECHNOLOGY LLC;SEAGATE TECHNOLOGY INTERNATIONAL;REEL/FRAME:022757/0017

Effective date: 20090507

Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATE

Free format text: SECURITY AGREEMENT;ASSIGNORS:MAXTOR CORPORATION;SEAGATE TECHNOLOGY LLC;SEAGATE TECHNOLOGY INTERNATIONAL;REEL/FRAME:022757/0017

Effective date: 20090507

AS Assignment

Owner name: SEAGATE TECHNOLOGY LLC, CALIFORNIA

Free format text: RELEASE;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:025662/0001

Effective date: 20110114

Owner name: MAXTOR CORPORATION, CALIFORNIA

Free format text: RELEASE;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:025662/0001

Effective date: 20110114

Owner name: SEAGATE TECHNOLOGY HDD HOLDINGS, CALIFORNIA

Free format text: RELEASE;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:025662/0001

Effective date: 20110114

Owner name: SEAGATE TECHNOLOGY INTERNATIONAL, CALIFORNIA

Free format text: RELEASE;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:025662/0001

Effective date: 20110114

AS Assignment

Owner name: THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT,

Free format text: SECURITY AGREEMENT;ASSIGNOR:SEAGATE TECHNOLOGY LLC;REEL/FRAME:026010/0350

Effective date: 20110118

STCF Information on status: patent grant

Free format text: PATENTED CASE

AS Assignment

Owner name: SEAGATE TECHNOLOGY US HOLDINGS, INC., CALIFORNIA

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT AND SECOND PRIORITY REPRESENTATIVE;REEL/FRAME:030833/0001

Effective date: 20130312

Owner name: SEAGATE TECHNOLOGY LLC, CALIFORNIA

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT AND SECOND PRIORITY REPRESENTATIVE;REEL/FRAME:030833/0001

Effective date: 20130312

Owner name: EVAULT INC. (F/K/A I365 INC.), CALIFORNIA

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT AND SECOND PRIORITY REPRESENTATIVE;REEL/FRAME:030833/0001

Effective date: 20130312

Owner name: SEAGATE TECHNOLOGY INTERNATIONAL, CAYMAN ISLANDS

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT AND SECOND PRIORITY REPRESENTATIVE;REEL/FRAME:030833/0001

Effective date: 20130312

FPAY Fee payment

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8

FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY