US20090029542A1 - Methods and systems for laser assisted wirebonding - Google Patents

Methods and systems for laser assisted wirebonding Download PDF

Info

Publication number
US20090029542A1
US20090029542A1 US12/240,372 US24037208A US2009029542A1 US 20090029542 A1 US20090029542 A1 US 20090029542A1 US 24037208 A US24037208 A US 24037208A US 2009029542 A1 US2009029542 A1 US 2009029542A1
Authority
US
United States
Prior art keywords
bonding surface
bondwire
laser
laser pulse
wirebonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/240,372
Inventor
Willmar E. Subido
Edgardo Hortaleza
Stuart M. Jacobsen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to US12/240,372 priority Critical patent/US20090029542A1/en
Publication of US20090029542A1 publication Critical patent/US20090029542A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • B23K20/007Ball bonding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20Bonding
    • B23K26/21Bonding by welding
    • B23K26/22Spot welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K28/00Welding or cutting not covered by any of the preceding groups, e.g. electrolytic welding
    • B23K28/02Combined welding or cutting procedures or apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/08Non-ferrous metals or alloys
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/08Non-ferrous metals or alloys
    • B23K2103/10Aluminium or alloys thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/08Non-ferrous metals or alloys
    • B23K2103/12Copper or alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664Palladium [Pd] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164Palladium (Pd) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48647Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48664Palladium (Pd) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48739Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48744Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48747Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48764Palladium (Pd) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48817Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48824Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48839Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48847Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48863Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48864Palladium (Pd) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/78268Discharge electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8501Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85014Thermal cleaning, e.g. decomposition, sublimation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8501Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85014Thermal cleaning, e.g. decomposition, sublimation
    • H01L2224/85016Thermal cleaning, e.g. decomposition, sublimation using a laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85039Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/8521Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0106Neodymium [Nd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Definitions

  • the invention relates to electronic semiconductor devices and manufacturing. More particularly, the invention relates to methods for making welded interconnections between microelectronic components, especially wirebonding.
  • Wirebonding generally refers to the process of forming an electrical connection between the silicon chip and the external leads of the semiconductor device using very fine wires welded to terminals at each end, such as a bond pad on a chip and a lead finger on a leadframe.
  • the wires used in wirebonding are usually made of gold.
  • wirebond processes There are two common wirebond processes distinguished by the shape of the weld, “ball” bonding, and “stitch” or “wedge” bonding.
  • a molten “free air ball” is formed by melting the free end of the wire, held by a “bonding head” or “capillary”, using a high voltage spark in a technique known as electronic flame-off (EFO).
  • EFO electronic flame-off
  • the free air ball typically has a diameter ranging from 1.5 to 2.5 times the wire diameter.
  • the free air ball is then brought into contact with the bond pad, which is usually heated by other means.
  • the general practice in the arts is to apply pressure to the press the free air ball into the surface of the bond pad.
  • the wire is run from the chip to a corresponding terminal such as the finger of a leadframe, forming a gradual arc or “loop” between the bond pad and the leadfinger.
  • EFO, pressure, and ultrasonic forces are applied to the wire to form a stitch bond with the leadfinger.
  • the wirebonding machinery severs the wire in preparation for the next wirebond cycle, usually by clamping the wire and raising the bonding head. The cycle repeats with repositioning the wire for a new bond. It is known to make numerous such wirebond connections between bond pads on a chip and the ends of leadfingers, often at the rate of several per second.
  • wirebonding is well known, problems persist in forming satisfactory wirebonds due to a variety of factors.
  • One of the problems is the potential to cause damage to the bond pads due to the application of pressure and/or ultrasonic energy.
  • the ultrasonic energy can cause cracks in one or more layers, which may inhibit or prevent the formation of a weld, or may weaken the bond pad making it prone to further breakage later. Contaminants or irregularities on the bonding surface can also inhibit weld formation.
  • another related problem is “ball lifting” after weld formation due to defective welds.
  • the formation of strong welds may be inhibited by the presence of contaminants on the bond pad, which act as barriers between the ball and the bond pad.
  • contaminants that inhibit wirebonding may include residual glass, photoresist, silicon dust, die attach adhesive, or other impurities generated during the manufacturing process.
  • Corrosion, or the formation of metal oxides on the exposed surface of the bond pads or lead fingers may also prevent the formation of an adequate weld.
  • Yet another potential for problems may arise from disturbed or uneven bond pad surfaces. Such irregularities in the bonding surface may cause unexpected variations in the weld formation process. Excessive interdiffusion between the bond pad and wirebond metals or the formation of voids underneath the bond may also arise to create weak, and ultimately lifted welds.
  • a laser is employed in combination with familiar wirebonding processes and tools.
  • the laser is used for preparatory conditioning of bonding surfaces.
  • a method for wirebonding in a manufacturing process for a microelectronic semiconductor device having a bonding surface and a bondwire includes steps for conditioning the bonding surface by the application of at least one laser pulse.
  • a free air ball is formed on the bondwire for welding and is placed in contact with the laser conditioned bonding surface to form a weld joining the wire with the bonding surface.
  • an embodiment of a method for wirebonding includes using one or more conditioning laser pulses having a wavelength of about 1064 nanometers.
  • a system for bonding a wire to a bonding surface for use in a manufacturing process for microelectronic semiconductor devices includes a bonding tool for manipulating the bondwire and an EFO electrode for forming a free air ball on the bondwire.
  • the components of the system are operably coupled to act in concert, having one or more controllers for controlling the laser pulses, free air ball formation, and bondwire manipulation, whereby the molten free air ball is placed in contact with the conditioned bonding surface to form a weld.
  • the laser of the wirebonding system is a Q-switched laser.
  • the system further includes optics configured for adapting the laser pulses to the geometry of the bonding surface.
  • the methods and systems of the invention may be adapted within the scope of the invention and without undue experimentation for use with bondwires, bond pads, and leads of various materials including gold, copper, aluminum, silver, and palladium.
  • the invention has advantages including but not limited to providing systems and methods for ball and stitch bonding using a laser for surface preparation and welding to ensure improved weld formation.
  • FIG. 1A is a simplified block diagram showing a top front perspective view of an example of the systems and method steps of the invention
  • FIG. 1B is a simplified block diagram showing a top front perspective view of an example of the systems and further method steps of the invention
  • FIG. 1C is a simplified block diagram showing a top front perspective view of an example of the systems and additional method steps of the invention.
  • FIG. 2 is a simplified process flow diagram showing an alternative view of steps in an example of methods of the invention.
  • the invention provides methods and systems for laser assisted wirebonding.
  • One or more conditioning laser pulses are used to prepare the bonding surface for wirebonding by removing impurities such as residues left from earlier manufacturing processes, oxides formed on exposed bonding surfaces, or irregularities on the surface.
  • a free air ball is brought into contact with the bonding surface to form a weld.
  • a workpiece 10 includes a bonding surface 12 , in this example a bond pad.
  • a lead finger bonding surface may be equally common in the arts and it should be understood that the invention is not limited to a particular type of bonding surface.
  • the bonding surface 12 may be a relatively thick layer of metal or a relatively complex multilayer structure having a metallic outer surface for welding.
  • the systems and methods of the invention may advantageously employ common wirebonding tools in which bondwire is supplied through a “bonding head”.
  • bonding head is generally determined by the nature of the bond to be made, for example, for a ball bond, a “rcapiflary” type bonding head is typical. For making a wedge or stitch bond, a “wedge” type bonding head is generally used. These terms have generally recognized but not necessarily universal meaning in the art.
  • bonding tool 14 is used to indicate a bonding head suitable for manipulating bondwire 16 for making either ball or wedge bonds.
  • An EFO electrode 18 is typically positioned in close proximity to the bonding wire 16 such that a powerful spark 20 ( FIG. 1B ) may be generated at precisely controlled intervals in order to form a free air ball 22 at the end of the bondwire 16 .
  • a laser 24 capable of generating high-energy pulses 26 is positioned in close proximity to the bonding surface 12 .
  • a laser controller 28 is configured for generating a control signal 30 in close coordination with the spark controller 32 and its control signal 34 , and also in close coordination with the bondwire manipulations of the bonding tool 14 .
  • the laser 24 is provided with optics 36 for adjusting the area of the laser pulses 26 in accordance with the geometry of the bonding surface 12 .
  • the laser 24 is preferably a Nd:YAG pulsed laser with a fluence in a range of about 1 microjoule to 1 Joule per square centimeter, and a pulse width of approximately 1 to 100 nanoseconds and a repetition rate within a range of about 10 Hz to 10 kHz.
  • Nd:YAG lasers are known in the arts for use in manufacturing, particularly for cutting and welding.
  • Nd:YAG lasers typically emit light with a wavelength of 1064 nm, in the infrared.
  • the Nd:YAG lasers known in the arts may operate in both pulsed and continuous mode.
  • Pulsed Nd:YAG lasers are typically operated in a “Q-switching” mode, in which an optical switch is inserted in the laser cavity awaiting an optimum population inversion in the neodymium ions before it opens to emit a pulse.
  • the pulses used for the invention are obtainable by Q-switching.
  • the result is a short pulse of light output from the laser, or a series of such pulses, which have a peak intensity sufficient for ablating material from the bonding surface.
  • the laser 24 is positioned for directing a laser beam to the bonding surface(s) of the workpiece(s).
  • the optics 36 are used to create a Gaussian laser beam with a radius adapted to the size and shape of the particular bonding surface.
  • a beam with a radius of about 10-15 um may be required.
  • laser-beam propagation can be approximated by assuming that the laser beam has an ideal Gaussian intensity profile.
  • the properties of Gaussian beams and the means for adjusting to practical departures from the theoretical Gaussian are known in the arts. Those skilled in the arts may use known propagation and optical techniques to adapt the laser pulses for implementing the invention in particular applications and for various bonding surface geometries.
  • One or more conditioning pulses 26 are preferably used to ablate the contaminants, such as metal oxides, from the bonding surface 12 .
  • the duration and number of pulses 26 may be selected based on process parameters such as bonding surface materials and contaminants found present.
  • a controller is preferably used to precisely control the timing of the laser pulses in coordination with the bond spark. The controller may be used to adapt a versatile range of laser pulse and spark sequences to suit particular bonding tasks.
  • pulse fluences and timing sequences may be tailored to the removal of copper oxide CuO from the bond pad surface prior to welding.
  • pulse fluences and timing sequences may be tailored to the removal of aluminum oxide Al 2 O 3 from the lead finger surface prior to welding.
  • the conditioning pulses 26 may also be used for reducing irregularities on the bonding surface 12 as well as for removing impurities.
  • the laser pulses may be singular, as in for example the use of a single pulse to ablate about 20 Angstroms of surface material, or multiple, as in the use of four pulses ablating about 25 Angstroms each.
  • the duration, intensity and frequency of the laser pulses may be adapted to many specific applications within the scope of the invention.
  • one or more additional laser pulses 26 may be applied to the bonding surface 12 in order to further condition the bonding surface 12 in the path of the free air ball 22 formed on the bond wire 16 by the EFO spark 20 .
  • Multiple pulses may be used as needed to ablate contaminants, or to make an uneven surface more regular.
  • the control signals 30 , 34 are coordinated in such a way that the temperatures of the bonding surface 12 and free air ball 22 at the time and place of contact are suitable for weld formation. Welding temperatures may be obtainable without applying additional heat to the bonding surface 12 from below, or additional heating may be applied to the bonding surface 12 as is known in the arts. As shown in FIG.
  • the free air ball 22 is brought into contact with the conditioned bonding surface 12 and cooled to form a weld 40 .
  • weld 40 formation is caused to occur by bringing the free air ball 22 into contact with the bonding surface 12 with little or no application of ultrasonic energy to the bondwire 16 and bonding surface 12 .
  • pressure may be applied sparingly in order to reduce the potential for damage to the bonding surface. In some applications, depending primarily upon the materials being welded, the use of ultrasound may be avoided altogether.
  • welds may be made with reduced risk of damage to bonding surfaces, particularly in applications where it is desirable to minimize the application of ultrasonic energy or pressure as in the case of multilayer bond pads having thin low-K or ultra-low-k layers.
  • the systems and methods of the invention may be used for wirebonding using various materials less suited for common methods while nevertheless obtaining useable welds with adequate intermetallic compound formation.
  • the invention may be used with bondwires and bonding surfaces made from materials including gold, copper, silver, aluminum, palladium, or other combinations of these and other metals.
  • copper bondwires may be welded to copper bonding surfaces.
  • FIG. 2 presents an alternative depiction of the methods of the invention.
  • the bonding surface is conditioned using one or more laser pulses as shown in box 42 .
  • a free air ball is formed, step 44 .
  • the free air ball is joined with the bonding surface to form a weld, 46 .
  • the steps of the invention may advantageously be performed in combination with adaptations to various wirebonding systems and processes used in the arts.
  • the formation of the free air ball is coordinated with the surface-conditioning laser pulse(s) prior to bringing the materials together for weld formation.
  • the methods and systems of the invention provide one or more advantages which may include improving wirebonds, reducing or eliminating contaminants or surface irregularities in wirebonding processes, and reducing or eliminating the use of ultrasound for wirebond formation.
  • the invention may be used with established manufacturing processes with practical and cost-effective modification. While the invention has been described with reference to certain illustrative embodiments, those described herein are not intended to be construed in a limiting sense. For example, variations or combinations of steps in the embodiments shown and described may be used in particular cases without departure from the invention. Modifications and combinations of the illustrative embodiments as well as other advantages and embodiments of the invention will be apparent to persons skilled in the arts upon reference to the drawings, description, and claims.

Abstract

The invention provides methods and systems for laser assisted wirebonding. One or more conditioning laser pulses are used to prepare a bonding surface for wirebonding by removing impurities such as residues from manufacturing processes, oxides, or irregularities on the bonding surface. Subsequently, a free air ball is brought into contact with the conditioned bonding surface to form a weld.

Description

    RELATED APPLICATIONS
  • This application is a continuation application of U.S. patent application Ser. No. 11/456,404, filed Jul. 10, 2006, entitled “Methods and Systems for Laser Assisted Wirebonding,” which is incorporated herein by reference in its entirety
  • TECHNICAL FIELD
  • The invention relates to electronic semiconductor devices and manufacturing. More particularly, the invention relates to methods for making welded interconnections between microelectronic components, especially wirebonding.
  • BACKGROUND OF THE INVENTION
  • Welding is a process of joining metals by melting workpieces to form a molten “weld puddle” that coalesces upon cooling to form a metal joint. Often pressure and/or ultrasonic energy are also applied to the components as well as heat in order to produce a weld. In the context of microelectronics, the specialized welding process most often used is termed “wirebonding”. Wirebonding generally refers to the process of forming an electrical connection between the silicon chip and the external leads of the semiconductor device using very fine wires welded to terminals at each end, such as a bond pad on a chip and a lead finger on a leadframe. The wires used in wirebonding are usually made of gold. There are two common wirebond processes distinguished by the shape of the weld, “ball” bonding, and “stitch” or “wedge” bonding. During wirebonding, a molten “free air ball” is formed by melting the free end of the wire, held by a “bonding head” or “capillary”, using a high voltage spark in a technique known as electronic flame-off (EFO). The free air ball typically has a diameter ranging from 1.5 to 2.5 times the wire diameter. The free air ball is then brought into contact with the bond pad, which is usually heated by other means. The general practice in the arts is to apply pressure to the press the free air ball into the surface of the bond pad. To further assist in ensuring adequate contact between the bondwire and bond pad, it is common to also apply ultrasonic forces to the bond wire, in effect rubbing it in contact with the bond pad during heating to form a metallurgical weld between the ball and the bond pad and deforming the weld itself into its final shape. Continuing the process, the wire is run from the chip to a corresponding terminal such as the finger of a leadframe, forming a gradual arc or “loop” between the bond pad and the leadfinger. Again, EFO, pressure, and ultrasonic forces are applied to the wire to form a stitch bond with the leadfinger. The wirebonding machinery severs the wire in preparation for the next wirebond cycle, usually by clamping the wire and raising the bonding head. The cycle repeats with repositioning the wire for a new bond. It is known to make numerous such wirebond connections between bond pads on a chip and the ends of leadfingers, often at the rate of several per second.
  • Although wirebonding is well known, problems persist in forming satisfactory wirebonds due to a variety of factors. One of the problems is the potential to cause damage to the bond pads due to the application of pressure and/or ultrasonic energy. Particularly in the case of delicate bond pads having multiple layers including metallic and low-K or ultra-low-K layers, the ultrasonic energy can cause cracks in one or more layers, which may inhibit or prevent the formation of a weld, or may weaken the bond pad making it prone to further breakage later. Contaminants or irregularities on the bonding surface can also inhibit weld formation. In addition to potential problems with weld formation, another related problem is “ball lifting” after weld formation due to defective welds. The formation of strong welds may be inhibited by the presence of contaminants on the bond pad, which act as barriers between the ball and the bond pad. Common contaminants that inhibit wirebonding may include residual glass, photoresist, silicon dust, die attach adhesive, or other impurities generated during the manufacturing process. Corrosion, or the formation of metal oxides on the exposed surface of the bond pads or lead fingers may also prevent the formation of an adequate weld. Yet another potential for problems may arise from disturbed or uneven bond pad surfaces. Such irregularities in the bonding surface may cause unexpected variations in the weld formation process. Excessive interdiffusion between the bond pad and wirebond metals or the formation of voids underneath the bond may also arise to create weak, and ultimately lifted welds. There is a need in the arts for improved wirebonding methods and systems for ensuring uniformity in the welding process and the formation of robust welds while reducing or eliminating one or more of these and possibly other problems.
  • SUMMARY OF THE INVENTION
  • In carrying out the principles of the present invention in accordance with preferred embodiments thereof, a laser is employed in combination with familiar wirebonding processes and tools. The laser is used for preparatory conditioning of bonding surfaces.
  • According to one aspect of the invention, a method for wirebonding in a manufacturing process for a microelectronic semiconductor device having a bonding surface and a bondwire includes steps for conditioning the bonding surface by the application of at least one laser pulse. A free air ball is formed on the bondwire for welding and is placed in contact with the laser conditioned bonding surface to form a weld joining the wire with the bonding surface.
  • According to another aspect of the invention, an embodiment of a method for wirebonding includes using one or more conditioning laser pulses having a wavelength of about 1064 nanometers.
  • According to yet another aspect of the invention, a system for bonding a wire to a bonding surface for use in a manufacturing process for microelectronic semiconductor devices includes a bonding tool for manipulating the bondwire and an EFO electrode for forming a free air ball on the bondwire. A neodymium-doped yttrium aluminum garnet, (Nd:Y3Al5O12) laser, also called a Nd:YAG laser, is used for conditioning the bonding surface with the application of at least one laser pulse. The components of the system are operably coupled to act in concert, having one or more controllers for controlling the laser pulses, free air ball formation, and bondwire manipulation, whereby the molten free air ball is placed in contact with the conditioned bonding surface to form a weld.
  • According to still another aspect of the invention, the laser of the wirebonding system is a Q-switched laser.
  • According to another aspect of the invention, the system further includes optics configured for adapting the laser pulses to the geometry of the bonding surface.
  • According to other aspects of preferred embodiments of the invention, the methods and systems of the invention may be adapted within the scope of the invention and without undue experimentation for use with bondwires, bond pads, and leads of various materials including gold, copper, aluminum, silver, and palladium.
  • The invention has advantages including but not limited to providing systems and methods for ball and stitch bonding using a laser for surface preparation and welding to ensure improved weld formation. These and other features, advantages, and benefits of the present invention can be understood by one of ordinary skill in the arts upon careful consideration of the detailed description of representative embodiments of the invention in connection with the accompanying drawings.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The present invention will be more clearly understood from consideration of the following detailed description and drawings in which:
  • FIG. 1A is a simplified block diagram showing a top front perspective view of an example of the systems and method steps of the invention;
  • FIG. 1B is a simplified block diagram showing a top front perspective view of an example of the systems and further method steps of the invention;
  • FIG. 1C is a simplified block diagram showing a top front perspective view of an example of the systems and additional method steps of the invention; and
  • FIG. 2 is a simplified process flow diagram showing an alternative view of steps in an example of methods of the invention.
  • References in the detailed description correspond to like references in the various drawings unless otherwise noted. Descriptive and directional terms used in the written description such as top, bottom, upper, side, etc., refer to the drawings themselves as laid out on the paper and not to physical limitations of the invention unless specifically noted. The drawings are not to scale, and some features of embodiments shown and discussed are simplified or amplified for illustrating the principles, features, and advantages of the invention.
  • DESCRIPTION OF PREFERRED EMBODIMENTS
  • In general, the invention provides methods and systems for laser assisted wirebonding. One or more conditioning laser pulses are used to prepare the bonding surface for wirebonding by removing impurities such as residues left from earlier manufacturing processes, oxides formed on exposed bonding surfaces, or irregularities on the surface. Subsequent to laser conditioning the bonding surface, a free air ball is brought into contact with the bonding surface to form a weld.
  • Referring to FIGS. 1A through 1C, an overview an example of a system for implementing methods and steps in laser assisted wirebonding according to the invention is introduced. A workpiece 10 includes a bonding surface 12, in this example a bond pad. A lead finger bonding surface may be equally common in the arts and it should be understood that the invention is not limited to a particular type of bonding surface. The bonding surface 12 may be a relatively thick layer of metal or a relatively complex multilayer structure having a metallic outer surface for welding. The systems and methods of the invention may advantageously employ common wirebonding tools in which bondwire is supplied through a “bonding head”. The exact nature of the bonding head is generally determined by the nature of the bond to be made, for example, for a ball bond, a “rcapiflary” type bonding head is typical. For making a wedge or stitch bond, a “wedge” type bonding head is generally used. These terms have generally recognized but not necessarily universal meaning in the art. For the purposes of describing the invention, the term “bonding tool” 14 is used to indicate a bonding head suitable for manipulating bondwire 16 for making either ball or wedge bonds. An EFO electrode 18 is typically positioned in close proximity to the bonding wire 16 such that a powerful spark 20 (FIG. 1B) may be generated at precisely controlled intervals in order to form a free air ball 22 at the end of the bondwire 16. A laser 24 capable of generating high-energy pulses 26 is positioned in close proximity to the bonding surface 12. A laser controller 28 is configured for generating a control signal 30 in close coordination with the spark controller 32 and its control signal 34, and also in close coordination with the bondwire manipulations of the bonding tool 14. The laser 24 is provided with optics 36 for adjusting the area of the laser pulses 26 in accordance with the geometry of the bonding surface 12.
  • The laser 24 is preferably a Nd:YAG pulsed laser with a fluence in a range of about 1 microjoule to 1 Joule per square centimeter, and a pulse width of approximately 1 to 100 nanoseconds and a repetition rate within a range of about 10 Hz to 10 kHz. Nd:YAG lasers are known in the arts for use in manufacturing, particularly for cutting and welding. Nd:YAG lasers typically emit light with a wavelength of 1064 nm, in the infrared. The Nd:YAG lasers known in the arts may operate in both pulsed and continuous mode. Pulsed Nd:YAG lasers are typically operated in a “Q-switching” mode, in which an optical switch is inserted in the laser cavity awaiting an optimum population inversion in the neodymium ions before it opens to emit a pulse. The pulses used for the invention are obtainable by Q-switching. The result is a short pulse of light output from the laser, or a series of such pulses, which have a peak intensity sufficient for ablating material from the bonding surface. The laser 24 is positioned for directing a laser beam to the bonding surface(s) of the workpiece(s).
  • The optics 36 are used to create a Gaussian laser beam with a radius adapted to the size and shape of the particular bonding surface. For a typical bond pad and bondwire, for example, a beam with a radius of about 10-15 um may be required. In most laser applications, it is necessary to focus, modify, or shape the laser beam by using optical elements such as lenses. In general, laser-beam propagation can be approximated by assuming that the laser beam has an ideal Gaussian intensity profile. The properties of Gaussian beams and the means for adjusting to practical departures from the theoretical Gaussian are known in the arts. Those skilled in the arts may use known propagation and optical techniques to adapt the laser pulses for implementing the invention in particular applications and for various bonding surface geometries.
  • Now referring primarily to FIG. 1A, on a bonding surface 12, contaminants are often present due to previous manufacturing processes or due to the environment. On a metallic bond pad surface, for example, metal oxide is often present due to exposure of the bond pad surface to the surrounding air. One or more conditioning pulses 26 are preferably used to ablate the contaminants, such as metal oxides, from the bonding surface 12. The duration and number of pulses 26 may be selected based on process parameters such as bonding surface materials and contaminants found present. A controller is preferably used to precisely control the timing of the laser pulses in coordination with the bond spark. The controller may be used to adapt a versatile range of laser pulse and spark sequences to suit particular bonding tasks. For copper bond pads, for example, pulse fluences and timing sequences may be tailored to the removal of copper oxide CuO from the bond pad surface prior to welding. In another example, for aluminum leadframes, pulse fluences and timing sequences may be tailored to the removal of aluminum oxide Al2O3 from the lead finger surface prior to welding. It should be appreciated that the conditioning pulses 26 may also be used for reducing irregularities on the bonding surface 12 as well as for removing impurities. The laser pulses may be singular, as in for example the use of a single pulse to ablate about 20 Angstroms of surface material, or multiple, as in the use of four pulses ablating about 25 Angstroms each. The duration, intensity and frequency of the laser pulses may be adapted to many specific applications within the scope of the invention.
  • As illustrated in FIG. 1B, one or more additional laser pulses 26 may be applied to the bonding surface 12 in order to further condition the bonding surface 12 in the path of the free air ball 22 formed on the bond wire 16 by the EFO spark 20. Multiple pulses may be used as needed to ablate contaminants, or to make an uneven surface more regular. The control signals 30, 34 are coordinated in such a way that the temperatures of the bonding surface 12 and free air ball 22 at the time and place of contact are suitable for weld formation. Welding temperatures may be obtainable without applying additional heat to the bonding surface 12 from below, or additional heating may be applied to the bonding surface 12 as is known in the arts. As shown in FIG. 1C, the free air ball 22 is brought into contact with the conditioned bonding surface 12 and cooled to form a weld 40. Preferably, weld 40 formation is caused to occur by bringing the free air ball 22 into contact with the bonding surface 12 with little or no application of ultrasonic energy to the bondwire 16 and bonding surface 12. Although some application of pressure is required for weld formation, pressure may be applied sparingly in order to reduce the potential for damage to the bonding surface. In some applications, depending primarily upon the materials being welded, the use of ultrasound may be avoided altogether. Using the invention, welds may be made with reduced risk of damage to bonding surfaces, particularly in applications where it is desirable to minimize the application of ultrasonic energy or pressure as in the case of multilayer bond pads having thin low-K or ultra-low-k layers. It should also be appreciated that the systems and methods of the invention may be used for wirebonding using various materials less suited for common methods while nevertheless obtaining useable welds with adequate intermetallic compound formation. For example, the invention may be used with bondwires and bonding surfaces made from materials including gold, copper, silver, aluminum, palladium, or other combinations of these and other metals. In one further example of an embodiment of the invention, copper bondwires may be welded to copper bonding surfaces.
  • FIG. 2 presents an alternative depiction of the methods of the invention. The bonding surface is conditioned using one or more laser pulses as shown in box 42. A free air ball is formed, step 44. The free air ball is joined with the bonding surface to form a weld, 46. It should be understood by those familiar with the arts that the steps of the invention may advantageously be performed in combination with adaptations to various wirebonding systems and processes used in the arts. In the formation of a stitch bond or a ball bond using the invention, the formation of the free air ball is coordinated with the surface-conditioning laser pulse(s) prior to bringing the materials together for weld formation.
  • The methods and systems of the invention provide one or more advantages which may include improving wirebonds, reducing or eliminating contaminants or surface irregularities in wirebonding processes, and reducing or eliminating the use of ultrasound for wirebond formation. In some applications, the invention may be used with established manufacturing processes with practical and cost-effective modification. While the invention has been described with reference to certain illustrative embodiments, those described herein are not intended to be construed in a limiting sense. For example, variations or combinations of steps in the embodiments shown and described may be used in particular cases without departure from the invention. Modifications and combinations of the illustrative embodiments as well as other advantages and embodiments of the invention will be apparent to persons skilled in the arts upon reference to the drawings, description, and claims.

Claims (15)

1. In a manufacturing process for a microelectronic semiconductor device having a bonding surface and a bondwire, a method of wirebonding comprising:
conditioning the bonding surface with an application of at least one first laser pulse;
forming a free air ball on the bondwire for welding;
applying at least one second laser pulse to the bonding surface to heat the bonding surface; and
coordinating one or more control signals to control the second laser pulse and the free air ball such that a temperature of the bonding surface and the free air ball are suitable for forming a weld joining the bondwire with the bonding surface.
2. A method according to claim 1 wherein the at least one first laser pulse consists of light having a wavelength of about 1064 nanometers.
3. A method according to claim 1 wherein the at least one first laser pulse has a fluence within a range of about one micro-Joule to about one Joule per square centimeter.
4. A method according to claim 1 wherein the at least one first laser pulse has a duration of about one to one hundred nanoseconds.
5. A method according to claim 1 wherein the at least one first laser pulse comprises a plurality of laser pulses having a repetition rate of about 1-10,000 Hertz.
6. A method according to claim 1 wherein the bondwire comprises gold.
7. A method according to claim 1 wherein the bondwire comprises copper.
8. A method according to claim 1 wherein the bondwire comprises aluminum.
9. A method according to claim 1 wherein the bondwire comprises silver.
10. A method according to claim 1 wherein the bondwire comprises palladium.
11. A method according to claim 1 wherein the bonding surface comprises aluminum.
12. A method according to claim 1 wherein the bonding surface comprises copper.
13. A method according to claim 1 wherein the weld is formed without applying additional heat from below the bonding surface.
14. A method according to claim 1 wherein the weld is formed without applying ultrasonic energy to the bonding surface.
15. A method according to claim 1 wherein the bonding surface is a multilayer bond pad comprising a layer chosen from a low-K layer or an ultra-low-K layer.
US12/240,372 2006-07-10 2008-09-29 Methods and systems for laser assisted wirebonding Abandoned US20090029542A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/240,372 US20090029542A1 (en) 2006-07-10 2008-09-29 Methods and systems for laser assisted wirebonding

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/456,404 US7476597B2 (en) 2006-07-10 2006-07-10 Methods and systems for laser assisted wirebonding
US12/240,372 US20090029542A1 (en) 2006-07-10 2008-09-29 Methods and systems for laser assisted wirebonding

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/456,404 Continuation US7476597B2 (en) 2006-07-10 2006-07-10 Methods and systems for laser assisted wirebonding

Publications (1)

Publication Number Publication Date
US20090029542A1 true US20090029542A1 (en) 2009-01-29

Family

ID=38919580

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/456,404 Active 2026-09-28 US7476597B2 (en) 2006-07-10 2006-07-10 Methods and systems for laser assisted wirebonding
US12/240,372 Abandoned US20090029542A1 (en) 2006-07-10 2008-09-29 Methods and systems for laser assisted wirebonding

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US11/456,404 Active 2026-09-28 US7476597B2 (en) 2006-07-10 2006-07-10 Methods and systems for laser assisted wirebonding

Country Status (1)

Country Link
US (2) US7476597B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100213619A1 (en) * 2007-01-15 2010-08-26 Nippon Steel Materials Co., Ltd. Bonding structure of bonding wire and method for forming same
US9324675B2 (en) 2014-04-25 2016-04-26 Freescale Semiconductor, Inc. Structures for reducing corrosion in wire bonds
US20160335210A1 (en) * 2015-05-13 2016-11-17 Nxp B.V. Method and system for bidirectional communication
US10245682B2 (en) 2015-11-11 2019-04-02 Continental Automotive Systems, Inc. Laser ablation for wirebonding surface on as-cast surface
CN109786275A (en) * 2019-01-01 2019-05-21 王伟 A kind of lead welding procedure and its lead for integrated antenna package
US10340246B1 (en) 2018-01-15 2019-07-02 Texas Instruments Incorporated Wire ball bonding in semiconductor devices
WO2020146914A3 (en) * 2019-01-14 2020-09-03 A.B. Mikroelektronik Gesellschaft Mit Beschränkter Haftung Methods of laser pretreating or processing a metal substrate for use in power electronic device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8138577B2 (en) * 2008-03-27 2012-03-20 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Pulse-laser bonding method for through-silicon-via based stacking of electronic components
US8357998B2 (en) * 2009-02-09 2013-01-22 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
WO2017066702A1 (en) * 2015-10-15 2017-04-20 Skyworks Solutions, Inc. Wire bond cleaning method and wire bonding recovery process
EP3265263B1 (en) * 2016-02-23 2018-12-12 Fronius International GmbH Welding device with a laser preheating device for filler wire

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5817544A (en) * 1996-01-16 1998-10-06 Olin Corporation Enhanced wire-bondable leadframe
US5938952A (en) * 1997-01-22 1999-08-17 Equilasers, Inc. Laser-driven microwelding apparatus and process
US20010008792A1 (en) * 1996-05-28 2001-07-19 Sven Evers Laser wire bonding for wire embedded dielectrics to integrated circuits
US20040014266A1 (en) * 2000-09-18 2004-01-22 Tomohiro Uno Bonding wire for semiconductor and method of manufacturing the bonding wire
US6717100B2 (en) * 1999-10-22 2004-04-06 Medtronic, Inc. Apparatus and method for laser welding of ribbons
US6835898B2 (en) * 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US20050001314A1 (en) * 2003-06-24 2005-01-06 Naotaka Tanaka Semiconductor device
US6858910B2 (en) * 2000-01-26 2005-02-22 Texas Instruments Incorporated Method of fabricating a molded package for micromechanical devices
US20050082266A1 (en) * 2001-10-01 2005-04-21 Data Storage Institute Method and apparatus for deflashing of integrated circuit packages
US20050145605A1 (en) * 2001-05-23 2005-07-07 Joaquina Faour Laser drilling system and method
US20050150932A1 (en) * 2002-02-11 2005-07-14 Khalil Hosseini Arrangement for wire bonding and method for producing a bonding connection
US20050184133A1 (en) * 2004-02-25 2005-08-25 Kulicke And Soffa Investments, Inc. Laser cleaning system for a wire bonding machine

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6835898B2 (en) * 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US5817544A (en) * 1996-01-16 1998-10-06 Olin Corporation Enhanced wire-bondable leadframe
US20010008792A1 (en) * 1996-05-28 2001-07-19 Sven Evers Laser wire bonding for wire embedded dielectrics to integrated circuits
US5938952A (en) * 1997-01-22 1999-08-17 Equilasers, Inc. Laser-driven microwelding apparatus and process
US6717100B2 (en) * 1999-10-22 2004-04-06 Medtronic, Inc. Apparatus and method for laser welding of ribbons
US6858910B2 (en) * 2000-01-26 2005-02-22 Texas Instruments Incorporated Method of fabricating a molded package for micromechanical devices
US20040014266A1 (en) * 2000-09-18 2004-01-22 Tomohiro Uno Bonding wire for semiconductor and method of manufacturing the bonding wire
US20050145605A1 (en) * 2001-05-23 2005-07-07 Joaquina Faour Laser drilling system and method
US20050082266A1 (en) * 2001-10-01 2005-04-21 Data Storage Institute Method and apparatus for deflashing of integrated circuit packages
US20050150932A1 (en) * 2002-02-11 2005-07-14 Khalil Hosseini Arrangement for wire bonding and method for producing a bonding connection
US20050001314A1 (en) * 2003-06-24 2005-01-06 Naotaka Tanaka Semiconductor device
US20050184133A1 (en) * 2004-02-25 2005-08-25 Kulicke And Soffa Investments, Inc. Laser cleaning system for a wire bonding machine

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100213619A1 (en) * 2007-01-15 2010-08-26 Nippon Steel Materials Co., Ltd. Bonding structure of bonding wire and method for forming same
US8247911B2 (en) * 2007-01-15 2012-08-21 Nippon Steel Materials Co., Ltd. Wire bonding structure and method for forming same
US9324675B2 (en) 2014-04-25 2016-04-26 Freescale Semiconductor, Inc. Structures for reducing corrosion in wire bonds
US20160335210A1 (en) * 2015-05-13 2016-11-17 Nxp B.V. Method and system for bidirectional communication
US10245682B2 (en) 2015-11-11 2019-04-02 Continental Automotive Systems, Inc. Laser ablation for wirebonding surface on as-cast surface
US10340246B1 (en) 2018-01-15 2019-07-02 Texas Instruments Incorporated Wire ball bonding in semiconductor devices
WO2019136743A1 (en) * 2018-01-15 2019-07-18 Texas Instruments Incorporated Wire ball bonding in semiconductor devices
CN109786275A (en) * 2019-01-01 2019-05-21 王伟 A kind of lead welding procedure and its lead for integrated antenna package
WO2020146914A3 (en) * 2019-01-14 2020-09-03 A.B. Mikroelektronik Gesellschaft Mit Beschränkter Haftung Methods of laser pretreating or processing a metal substrate for use in power electronic device

Also Published As

Publication number Publication date
US7476597B2 (en) 2009-01-13
US20080009129A1 (en) 2008-01-10

Similar Documents

Publication Publication Date Title
US7476597B2 (en) Methods and systems for laser assisted wirebonding
EP1226000B1 (en) An apparatus and method for laser welding of ribbons for electrical connections
EP0406351B1 (en) Ultrasonic laser soldering
JPH05218147A (en) Control system
CN103460363A (en) Cleaning method for bonding device and bonding tool
US6892927B2 (en) Method and apparatus for bonding a wire to a bond pad on a device
JPH02151047A (en) Bonding device
US9093515B2 (en) Wire bonding capillary with working tip protrusion
JP2008516442A (en) Method for laser dicing of substrates
JP5804644B2 (en) Ultrasonic wire bonding apparatus and ultrasonic wire bonding method
JPH0712051B2 (en) Bonding method and device
JPS61172343A (en) Wire bonding process and apparatus thereof
JPH0729942A (en) Repair method of electronic device
WO2007010510A2 (en) Method and device for wire bonding with low mechanical stress
Hanga et al. Study of copper free air ball in thermosonic copper ball bonding
JP3519322B2 (en) Wire bonding apparatus and wire bonding method
JP3609530B2 (en) Bonding method and bonding apparatus
US20230030336A1 (en) Method and apparatus for welding an aluminum alloy
JP2761922B2 (en) Wire bonding method and apparatus
JPS62276841A (en) Wire bonding
JP2022026626A (en) Semiconductor device and manufacturing method therefor
JPH07283221A (en) Bump forming method
JPS62123728A (en) Wire bonding method and device therefor
JPS63266845A (en) Wire bonding device
JP2001326240A (en) Wire-bonding method and device

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION