US20080271995A1 - Agitation of electrolytic solution in electrodeposition - Google Patents
Agitation of electrolytic solution in electrodeposition Download PDFInfo
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- US20080271995A1 US20080271995A1 US11/744,046 US74404607A US2008271995A1 US 20080271995 A1 US20080271995 A1 US 20080271995A1 US 74404607 A US74404607 A US 74404607A US 2008271995 A1 US2008271995 A1 US 2008271995A1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/20—Electroplating using ultrasonics, vibrations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09563—Metal filled via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0285—Using ultrasound, e.g. for cleaning, soldering or wet treatment
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0292—Using vibration, e.g. during soldering or screen printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1492—Periodical treatments, e.g. pulse plating of through-holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/421—Blind plated via connections
Definitions
- the present invention relates to agitation of electrolytic solution in electrodeposition.
- FIG. 1 illustrates electrodeposition (electroplating) of metal (e.g. copper) onto a substrate 110 , e.g. a silicon wafer or a printed circuit board.
- Seed layer 120 is formed on the substrate areas to be electroplated.
- Cathode terminal 124 of electric power supply 130 is connected to the seed layer, and anode terminal 134 is placed at a distance from substrate 110 .
- the substrate and the terminals 124 , 134 are immersed into an electroplating solution 140 .
- metal layer 150 is deposited on seed layer 120 from metal ions supplied by salts in the electroplating solution and by anode terminal 134 .
- the electrodeposition rate near the via bottom can be lower than at the top, and the metal 150 may close the via at the top before a desired amount of metal 150 is deposited into the via. An unwanted closed void may occur in the via as a result.
- the solution 140 can be agitated during the plating process to improve the metal ion delivery into the via 160 .
- Agitation may involve mechanical stirring (e.g. using air bubbles or eductors) or ultrasonic energy.
- ultrasonic energy source 170 can be positioned between the anode 134 and the substrate 110 so as to align the axis of ultrasound propagation with the central axis of via 160 , thus allowing the ultrasonic energy to reach the via bottom. See U.S. Pat. No. 6,746,590 B2 issued Jun. 8, 2004 to Zhang et al.
- FIG. 2 shows the voltage at cathode 124 relative to anode 134 as a function of time in this technique.
- the plating occurs when the voltage is negative (the negative pulses are shown at 210 ), but periodically the voltage polarity is reversed to deplate some of the metal.
- the reverse pulses are shown at 220 . Deplating proceeds faster at the top of the substrate than at the via bottom.
- the negative pulses (“forward pulses”) 210 and the positive pulses (“reverse pulses”) 220 are selected so that the net plating rate becomes more uniform, i.e.
- the net plating rate is made more uniform by turning off agitation during the positive pulses or at least reducing the agitation power during the positive pulses. Turning off or reducing the agitation power during deplating makes the deplating rate less uniform, i.e. the ratio of the deplating rate at the top to the deplating rate at the via bottom increases. Hence, more metal can be deplated at the top per a given amount of metal deplated at the via bottom. The deplating non-uniformity provides better compensation for the plating non-uniformity during the negative pulses.
- the agitation source is placed at the substrate's side opposite to anode terminal 134 not to interfere with the metal ions' movement at the side adjacent to terminal 134 .
- the agitation energy source e.g. ultrasound source
- FIG. 1 schematically illustrates an electroplating operation.
- FIG. 2 is a timing diagram of the electroplating voltage according to prior art.
- FIG. 3 is a timing diagram of the electroplating voltage and the agitation power according to some embodiments of the present invention.
- FIG. 4 illustrates an electroplating operation according to some embodiments of the present invention.
- FIG. 5 is a timing diagram of the electroplating voltage and the agitation power according to some embodiments of the present invention.
- FIG. 3 illustrates timing diagrams for the electroplating voltage (the voltage at terminal 124 relative to terminal 134 ) and the agitation power in some embodiments of the present invention.
- the electroplating voltage is as in FIG. 2 , with one or more negative pulses 210 delivered in each time period 210 T, then one or more positive pulses 220 delivered in a time period 220 T.
- the agitation power P A is positive during at least a portion of each time period 210 T, but the agitation is turned off during each positive-pulse period 220 T, or at least the maximum value of the agitation power in each period 220 T is below the maximum value in each period 210 T. Consequently, the deplating rate inside the via is lowered relative to the top of substrate 110 .
- the agitation can also be provided by mechanical stirring or perhaps in other ways.
- FIG. 4 illustrates mechanical stirring sources 410 in addition to source 170 .
- the mechanical stirring sources 410 provide a low frequency agitation (lower frequency than ultrasound).
- both the mechanical stirring and the ultrasonic agitation are provided during the negative pulses 210 , but only the mechanical stirring or only the ultrasonic agitation are provided during the positive pulses 220 .
- the mechanical stirring may be turned on to speed up deplating at the top of the substrate, but the ultrasound may be turned off to impede deplating at the via bottom.
- the agitation power of any one or more of the agitation sources may vary from one pulse 210 to the next, or from one pulse 220 to the next.
- the agitation does not have to be provided throughout the electroplating process.
- the agitation is provided only during a middle phase of the electroplating process, or only at the beginning and/or end.
- the electroplating process may be continued with just negative DC current without agitation to fill the wide shallow opening. Using the negative DC current increases the electroplating speed.
- pulses 210 , 220 are shown as a single pulse, a sequence of negative pulses can be used instead of a single pulse 210 , and/or a sequence of positive pulses can be used instead of a single pulse 220 .
- the pulses do not have to be square, but may have other shapes. See the aforementioned European patent application EP 1 667 507 A1, incorporated herein by reference.
- FIG. 5 illustrates another possible timing.
- P A is agitation power provided by ultrasonic source or sources 170 or 410 . Due to the propagation delay of the agitation energy from source 170 or 410 , the agitation power increases relatively slowly at the surface of substrate 110 .
- P AS is the agitation power of the solution at the substrate surface onto which the electrodeposition is being performed (top surface in FIG. 4 ) inside or outside of via 160 .
- the agitation power P A is turned on at time 0 at the start of a period 210 T, and almost immediately reaches its maximum value for that period 210 T.
- the power PAS reaches its maximum at some later time t 1 .
- the negative pulse or pulses 210 are delayed until at least the time t 1 to provide greater uniformity for electrodeposition.
- the agitation power P A is turned off at some time t 2 before the start of period 220 T (at a later time t 3 ) so that the solution agitation power P AS would have time to decrease to about zero by the start of pulse 220 .
- the negative pulse or pulses 210 are terminated at time t 2 or earlier not to allow electrodeposition to proceed with less than the maximum agitation P AS .
- the embodiment of FIG. 5 is particularly suitable for filling large vias 160 , of a diameter of a few tens of microns.
- the length of each pulse 210 is about 9.9 seconds, and the pulse current is ⁇ 2 A.
- the length of each pulse 220 is about 1 second, and the pulse current is 6 A.
- the times t 1 and (t 3 -t 2 ) are each about 100 ms.
- Other values are also possible for the lengths of the pulses 210 , 220 , their currents, the times t 1 , t 2 , t 3 . These parameters may depend on the via geometry, plating area, desired plating thickness, and other factors.
- the layer 150 can be quite thin on top of the wafer outside of via 160 , and so can be quickly polished away from the top by CMP (chemical mechanical polishing) if needed.
- ultrasonic source or sources 170 are placed at the bottom of substrate 110 , at the side opposite from the via opening and the terminal 134 .
- Ultrasonic energy propagates through substrate 110 to reach and agitate the electroplating solution inside via 160 and, possibly, at the top side of the substrate. Since the source 170 is closer to the via bottom than to the top of the substrate, the ultrasonic energy density can be higher at the via bottom than at the top of the substrate.
- the substrate 110 is a better conductor of ultrasound than the electrolytic solution 140 .
- substrate 110 may be a semiconductor wafer (e.g.
- the via bottom is closer to the bottom of the substrate than to the top, and hence the source 170 is closer to the via bottom than would be possible if the source 170 were located above the substrate.
- the source 170 is positioned very close to substrate 110 , possibly in physical contact with the substrate's bottom, to reduce the ultrasonic energy losses between the source 170 and the substrate. It is believed that the plating rate ratio of the top to the via bottom can be improved with the FIG. 4 arrangement. Further, the source 170 advantageously does not interfere with the metal ion movement between terminal 134 and substrate 110 .
- the source 170 may be moved relative to substrate 170 during electroplating. See the aforementioned U.S. Pat. No. 6,746,590 B2. Multiple sources 170 , some moving and some not, can be provided.
- Controller 420 may be a hardwired circuit and/or may include a computer processor or processors executing computer instructions to control the devices 170 , 410 . Controller 420 may include a computer readable medium storing computer instructions and/or data to control the devices 170 , 410 .
- the invention is not limited to the embodiments described above.
- the invention is not limited to flat substrates 110 . If the substrate is flat, it can be positioned horizontally as in FIG. 4 or at an angle, with the terminal 134 being either above the substrate or in some other position.
- the electroplating may be conducted onto any one side of the substrate or on multiple sides, depending on the seed layer position and masking (the seed layer may be masked as known in the art).
- the positions of terminal 134 and/or source 170 can be adjusted as needed.
- Via 160 can be a through via, and may have any suitable shape (e.g. elongated, damascene, etc.). Multiple vias can be provided.
- the invention is particularly suitable for high aspect ratio vias but is not limited thereto. Of note, the aspect ratio may increase during electroplating, and the techniques of FIG. 3 may be used only during a later portion of the plating process.
- the seed layer may be absent.
- Some embodiments of the present invention provide an electrodeposition method comprising: (1) immersing a substrate into an electrolytic solution; (2) providing a voltage between at least a portion of the substrate and an electrode (e.g. 134 ) spaced from the substrate to effect the electrodeposition onto the substrate, wherein providing the voltage comprises: (2A) providing one or more voltage pulses (e.g. 210 ) of a first polarity (e.g. negative polarity) in each of a plurality of first periods of time (e.g.
- 210 T to provide a net electrodeposition of metal onto the substrate in each first period of time (even though the voltage may become positive in a single period 210 T between the negative pulses 210 or before the first pulse 210 or after the last pulse 210 , the negative pulses dominate in each period 210 in the sense that the net result is electrodeposition); and (2B) providing one or more voltage pulses of a second polarity in each of a plurality of second periods of time ( 220 T) alternating with the first periods of time to provide a net deplating off the substrate in each second period of time; (3) during a first time interval comprising a plurality of the first periods of time and a plurality of the second periods of time (the first interval of time may include a whole or a part of the electrodeposition time), operating one or more agitation sources (e.g.
- an agitation source 170 or 410 may provide agitation power P A for the solution in each first period of time but not in the second periods of time.
- an agitation source provides agitation power for the solution both in each first period of time and in at least one of the second periods of time, but a maximum of the agitation power in each first period of time is greater than in any of the second periods of time.
- the one or more voltage pulses of the first polarity are provided only while the at least one of the agitation sources agitates said solution.
- the pulses 210 T are provided only while the power P A is positive.
- the power P A could be zero part of a period 210 T.
- the at least one of the agitation sources starts agitating said solution before a start of the one or more voltage pulses of the first polarity. For example, in FIG. 5 , in each period 210 T, the power P A becomes positive before the start of pulse 210 .
- the one or more voltage pulses of the first polarity are started only when the solution agitation at the substrate has reached its maximum in the first period of time.
- pulse 210 starts (at time t 1 ) only when P AS has reached its maximum value.
- the one or more voltage pulses of the first polarity stop no later than the at least one of the agitation sources stops providing agitation power to said solution.
- the pulse 210 stops (at time t 2 ) no later than P A becomes zero.
- the solution agitation at the substrate is zero throughout each second period of time (e.g. P AS is zero throughout each period 220 T).
- the solution agitation at the substrate becomes zero by the end of the first period of time (e.g. P AS becomes zero by the end of period 210 T).
- At least some of ultrasound provided by an ultrasound source is coupled from the ultrasound source directly into the substrate (for example, when source 170 contacts the substrate 110 ), propagating through the substrate to reach the solution.
- the substrate comprises a via
- the electrodeposition comprises electrodeposition into the via.
- the via has an aspect ratio of at least 1:1.
- Some embodiments provide an electrodeposition method comprising: (1) immersing a substrate into an electrolytic solution; (2) providing a voltage between at least a portion of the substrate and an electrode spaced from the substrate to effect the electrodeposition onto the substrate, wherein providing the voltage comprises: (2A) providing one or more voltage pulses of a first polarity but no pulses of a second polarity opposite to the first polarity in each of a plurality of first periods of time; and (2B) providing one or more voltage pulses of the second polarity but no pulses of the first polarity in each of a plurality of second periods of time alternating with the first periods of time; (3) during a first time interval comprising a plurality of the first periods of time and a plurality of the second periods of time, providing a greater maximum agitation power for the solution in each first period of time than in any of the second periods of time.
- the agitation power is zero in each second period of time.
- Some embodiments provide an electrodeposition method comprising: (1) immersing a substrate into an electrolytic solution; (2) providing a voltage between at least a portion of the substrate and a first electrode spaced from the substrate to effect the electrodeposition onto the substrate, the first electrode being positioned at a first side of the substrate (e.g. top side in FIG. 4 ); (3) during at least a part of operation (2), operating an ultrasound source to emit ultrasound at a second side of the substrate (e.g. bottom side in FIG. 4 ) opposite to the first side of the substrate.
- the substrate comprises a via in a first side of the substrate, the via is not a through via, and the electrodeposition comprises electrodeposition into the via.
- the deepest point of the via (the via's bottom in FIG. 4 ) is closer to the second side (e.g. bottom side) of the substrate than to the via's opening at the first side of the substrate.
- at least some of the ultrasound enters the substrate before entering the solution (e.g. if the source 170 contacts the substrate), and reaches the solution through the substrate.
- Some embodiments provide an apparatus for performing electrodeposition onto a substrate, the apparatus comprising: a first electrode (e.g. 124 ) for connection to the substrate; a second electrode (e.g. 134 ); and at least one ultrasound source; wherein a region for containing the substrate is located between the first electrode and the ultrasound source (in FIG. 4 , the substrate 110 is located between the electrode 124 and the source 170 ).
Abstract
Description
- The present invention relates to agitation of electrolytic solution in electrodeposition.
-
FIG. 1 illustrates electrodeposition (electroplating) of metal (e.g. copper) onto asubstrate 110, e.g. a silicon wafer or a printed circuit board.Seed layer 120 is formed on the substrate areas to be electroplated.Cathode terminal 124 ofelectric power supply 130 is connected to the seed layer, andanode terminal 134 is placed at a distance fromsubstrate 110. The substrate and theterminals electroplating solution 140. As a result,metal layer 150 is deposited onseed layer 120 from metal ions supplied by salts in the electroplating solution and byanode terminal 134. - If the metal is to be electroplated into a
via 160 in the substrate surface, the electrodeposition rate near the via bottom can be lower than at the top, and themetal 150 may close the via at the top before a desired amount ofmetal 150 is deposited into the via. An unwanted closed void may occur in the via as a result. - To increase the plating rate at the via bottom, the
solution 140 can be agitated during the plating process to improve the metal ion delivery into thevia 160. Agitation may involve mechanical stirring (e.g. using air bubbles or eductors) or ultrasonic energy. For example,ultrasonic energy source 170 can be positioned between theanode 134 and thesubstrate 110 so as to align the axis of ultrasound propagation with the central axis ofvia 160, thus allowing the ultrasonic energy to reach the via bottom. See U.S. Pat. No. 6,746,590 B2 issued Jun. 8, 2004 to Zhang et al. - Another technique used to improve the electrodeposition uniformity is periodic reverse pulse plating. This technique slows down the electrodeposition rate at the top relative to the via bottom.
FIG. 2 shows the voltage atcathode 124 relative toanode 134 as a function of time in this technique. The plating occurs when the voltage is negative (the negative pulses are shown at 210), but periodically the voltage polarity is reversed to deplate some of the metal. The reverse pulses are shown at 220. Deplating proceeds faster at the top of the substrate than at the via bottom. The negative pulses (“forward pulses”) 210 and the positive pulses (“reverse pulses”) 220 are selected so that the net plating rate becomes more uniform, i.e. the ratio of the plating rate at the top to the plating rate at the bottom decreases. See “Acid copper plating pulse processes” at http://www.electrochemicals.com/p_pulse.html (web site of Electrochemicals Inc.) describing “Electro-Brite PC-695 Acid Copper Plating Process”. See also European patent application EP 1 667 507 A1 filed by IBIDEN CO., LTD. - This section summarizes some features of the invention. Other features are described in the subsequent sections. The invention is defined by the appended claims which are incorporated into this section by reference.
- In some embodiments of the invention, the net plating rate is made more uniform by turning off agitation during the positive pulses or at least reducing the agitation power during the positive pulses. Turning off or reducing the agitation power during deplating makes the deplating rate less uniform, i.e. the ratio of the deplating rate at the top to the deplating rate at the via bottom increases. Hence, more metal can be deplated at the top per a given amount of metal deplated at the via bottom. The deplating non-uniformity provides better compensation for the plating non-uniformity during the negative pulses.
- In some embodiments, the agitation source is placed at the substrate's side opposite to
anode terminal 134 not to interfere with the metal ions' movement at the side adjacent toterminal 134. The agitation energy source (e.g. ultrasound source) can be placed close to the substrate, possibly in contact with the substrate. - The invention is not limited to the features and advantages described above. Other features are described below. The invention is defined by the appended claims.
-
FIG. 1 schematically illustrates an electroplating operation. -
FIG. 2 is a timing diagram of the electroplating voltage according to prior art. -
FIG. 3 is a timing diagram of the electroplating voltage and the agitation power according to some embodiments of the present invention. -
FIG. 4 illustrates an electroplating operation according to some embodiments of the present invention. -
FIG. 5 is a timing diagram of the electroplating voltage and the agitation power according to some embodiments of the present invention. - The embodiments described in this section illustrate but do not limit the invention. The invention is defined by the appended claims.
-
FIG. 3 illustrates timing diagrams for the electroplating voltage (the voltage atterminal 124 relative to terminal 134) and the agitation power in some embodiments of the present invention. The electroplating voltage is as inFIG. 2 , with one or morenegative pulses 210 delivered in eachtime period 210T, then one or morepositive pulses 220 delivered in atime period 220T. The agitation power PA is positive during at least a portion of eachtime period 210T, but the agitation is turned off during each positive-pulse period 220T, or at least the maximum value of the agitation power in eachperiod 220T is below the maximum value in eachperiod 210T. Consequently, the deplating rate inside the via is lowered relative to the top ofsubstrate 110. - The agitation can also be provided by mechanical stirring or perhaps in other ways.
FIG. 4 illustratesmechanical stirring sources 410 in addition tosource 170. Themechanical stirring sources 410 provide a low frequency agitation (lower frequency than ultrasound). In some embodiments, both the mechanical stirring and the ultrasonic agitation are provided during thenegative pulses 210, but only the mechanical stirring or only the ultrasonic agitation are provided during thepositive pulses 220. For example, during the positive pulses, the mechanical stirring may be turned on to speed up deplating at the top of the substrate, but the ultrasound may be turned off to impede deplating at the via bottom. Further, the agitation power of any one or more of the agitation sources may vary from onepulse 210 to the next, or from onepulse 220 to the next. The agitation does not have to be provided throughout the electroplating process. For example, in some embodiments, the agitation is provided only during a middle phase of the electroplating process, or only at the beginning and/or end. For example, if the electroplating process fills thevia 160 except for a wide shallow opening at the top of the via, the electroplating process may be continued with just negative DC current without agitation to fill the wide shallow opening. Using the negative DC current increases the electroplating speed. Note also the aforementioned U.S. Pat. No. 6,746,590 B2, incorporated herein by reference. While each ofpulses single pulse 210, and/or a sequence of positive pulses can be used instead of asingle pulse 220. The pulses do not have to be square, but may have other shapes. See the aforementioned European patent application EP 1 667 507 A1, incorporated herein by reference. -
FIG. 5 illustrates another possible timing. As inFIG. 3 , PA is agitation power provided by ultrasonic source orsources source substrate 110. PAS is the agitation power of the solution at the substrate surface onto which the electrodeposition is being performed (top surface inFIG. 4 ) inside or outside of via 160. The agitation power PA is turned on attime 0 at the start of aperiod 210T, and almost immediately reaches its maximum value for thatperiod 210T. The power PAS reaches its maximum at some later time t1. The negative pulse orpulses 210 are delayed until at least the time t1 to provide greater uniformity for electrodeposition. To provide greater non-uniformity during deplating, the agitation power PA is turned off at some time t2 before the start ofperiod 220T (at a later time t3) so that the solution agitation power PAS would have time to decrease to about zero by the start ofpulse 220. The negative pulse orpulses 210 are terminated at time t2 or earlier not to allow electrodeposition to proceed with less than the maximum agitation PAS. - The embodiment of
FIG. 5 is particularly suitable for fillinglarge vias 160, of a diameter of a few tens of microns. In an exemplary embodiment, the length of eachpulse 210 is about 9.9 seconds, and the pulse current is −2 A. The length of eachpulse 220 is about 1 second, and the pulse current is 6 A. The times t1 and (t3-t2) are each about 100 ms. Other values are also possible for the lengths of thepulses layer 150 can be quite thin on top of the wafer outside of via 160, and so can be quickly polished away from the top by CMP (chemical mechanical polishing) if needed. - The invention is not limited to a particular placement of agitation energy sources. In
FIG. 4 , ultrasonic source orsources 170 are placed at the bottom ofsubstrate 110, at the side opposite from the via opening and the terminal 134. Ultrasonic energy propagates throughsubstrate 110 to reach and agitate the electroplating solution inside via 160 and, possibly, at the top side of the substrate. Since thesource 170 is closer to the via bottom than to the top of the substrate, the ultrasonic energy density can be higher at the via bottom than at the top of the substrate. In some embodiments, thesubstrate 110 is a better conductor of ultrasound than theelectrolytic solution 140. For example,substrate 110 may be a semiconductor wafer (e.g. a silicon wafer) with or without other materials providing integrated circuit elements (such materials may include metal, semiconductor and dielectric materials), orsubstrate 110 may be a printed wiring substrate made of BT (bis-maleimide triazine), PPE (polyphenylene-ether), and/or other materials. In some embodiments, the via bottom is closer to the bottom of the substrate than to the top, and hence thesource 170 is closer to the via bottom than would be possible if thesource 170 were located above the substrate. In some embodiments, thesource 170 is positioned very close tosubstrate 110, possibly in physical contact with the substrate's bottom, to reduce the ultrasonic energy losses between thesource 170 and the substrate. It is believed that the plating rate ratio of the top to the via bottom can be improved with theFIG. 4 arrangement. Further, thesource 170 advantageously does not interfere with the metal ion movement betweenterminal 134 andsubstrate 110. - The
source 170 may be moved relative tosubstrate 170 during electroplating. See the aforementioned U.S. Pat. No. 6,746,590 B2.Multiple sources 170, some moving and some not, can be provided. - The
power supply 130 and theagitation energy sources controller 420.Controller 420 may be a hardwired circuit and/or may include a computer processor or processors executing computer instructions to control thedevices Controller 420 may include a computer readable medium storing computer instructions and/or data to control thedevices - The invention is not limited to the embodiments described above. For example, the invention is not limited to
flat substrates 110. If the substrate is flat, it can be positioned horizontally as inFIG. 4 or at an angle, with the terminal 134 being either above the substrate or in some other position. The electroplating may be conducted onto any one side of the substrate or on multiple sides, depending on the seed layer position and masking (the seed layer may be masked as known in the art). The positions ofterminal 134 and/orsource 170 can be adjusted as needed. Via 160 can be a through via, and may have any suitable shape (e.g. elongated, damascene, etc.). Multiple vias can be provided. The invention is particularly suitable for high aspect ratio vias but is not limited thereto. Of note, the aspect ratio may increase during electroplating, and the techniques ofFIG. 3 may be used only during a later portion of the plating process. The seed layer may be absent. - Some embodiments of the present invention provide an electrodeposition method comprising: (1) immersing a substrate into an electrolytic solution; (2) providing a voltage between at least a portion of the substrate and an electrode (e.g. 134) spaced from the substrate to effect the electrodeposition onto the substrate, wherein providing the voltage comprises: (2A) providing one or more voltage pulses (e.g. 210) of a first polarity (e.g. negative polarity) in each of a plurality of first periods of time (e.g. 210T) to provide a net electrodeposition of metal onto the substrate in each first period of time (even though the voltage may become positive in a single period 210T between the negative pulses 210 or before the first pulse 210 or after the last pulse 210, the negative pulses dominate in each period 210 in the sense that the net result is electrodeposition); and (2B) providing one or more voltage pulses of a second polarity in each of a plurality of second periods of time (220T) alternating with the first periods of time to provide a net deplating off the substrate in each second period of time; (3) during a first time interval comprising a plurality of the first periods of time and a plurality of the second periods of time (the first interval of time may include a whole or a part of the electrodeposition time), operating one or more agitation sources (e.g. 170 and/or 410) to agitate said solution, wherein at least one of the one or more agitation sources is operated in a first mode during each first period of time and in a second mode during each second period of time. For example, an
agitation source 170 or 410 (or both) may provide agitation power PA for the solution in each first period of time but not in the second periods of time. In another example, an agitation source provides agitation power for the solution both in each first period of time and in at least one of the second periods of time, but a maximum of the agitation power in each first period of time is greater than in any of the second periods of time. - In some embodiments, in each first period of time in the first time interval, the one or more voltage pulses of the first polarity are provided only while the at least one of the agitation sources agitates said solution. For example, in
FIG. 5 , in eachperiod 210T, thepulses 210T are provided only while the power PA is positive. The same is true forFIG. 3 . The invention is not limited to such embodiments as the power PA could be zero part of aperiod 210T. - In some embodiments, in each first period of time in the first time interval, the at least one of the agitation sources starts agitating said solution before a start of the one or more voltage pulses of the first polarity. For example, in
FIG. 5 , in eachperiod 210T, the power PA becomes positive before the start ofpulse 210. - In some embodiments, in each first period of time in the first time interval, the one or more voltage pulses of the first polarity are started only when the solution agitation at the substrate has reached its maximum in the first period of time. For example, in
FIG. 5 ,pulse 210 starts (at time t1) only when PAS has reached its maximum value. - In some embodiments, in each first period of time in the first time interval, the one or more voltage pulses of the first polarity stop no later than the at least one of the agitation sources stops providing agitation power to said solution. For example, in
FIG. 5 , thepulse 210 stops (at time t2) no later than PA becomes zero. In some embodiments, the solution agitation at the substrate is zero throughout each second period of time (e.g. PAS is zero throughout eachperiod 220T). - In some embodiments, in each first period of time in the first time interval, the solution agitation at the substrate becomes zero by the end of the first period of time (e.g. PAS becomes zero by the end of
period 210T). - In some embodiments, at least some of ultrasound provided by an ultrasound source is coupled from the ultrasound source directly into the substrate (for example, when
source 170 contacts the substrate 110), propagating through the substrate to reach the solution. - In some embodiments, the substrate comprises a via, and the electrodeposition comprises electrodeposition into the via. In some embodiments, at a start of the electrodeposition, the via has an aspect ratio of at least 1:1.
- Some embodiments provide an electrodeposition method comprising: (1) immersing a substrate into an electrolytic solution; (2) providing a voltage between at least a portion of the substrate and an electrode spaced from the substrate to effect the electrodeposition onto the substrate, wherein providing the voltage comprises: (2A) providing one or more voltage pulses of a first polarity but no pulses of a second polarity opposite to the first polarity in each of a plurality of first periods of time; and (2B) providing one or more voltage pulses of the second polarity but no pulses of the first polarity in each of a plurality of second periods of time alternating with the first periods of time; (3) during a first time interval comprising a plurality of the first periods of time and a plurality of the second periods of time, providing a greater maximum agitation power for the solution in each first period of time than in any of the second periods of time.
- In some embodiments, the agitation power is zero in each second period of time.
- Some embodiments provide an electrodeposition method comprising: (1) immersing a substrate into an electrolytic solution; (2) providing a voltage between at least a portion of the substrate and a first electrode spaced from the substrate to effect the electrodeposition onto the substrate, the first electrode being positioned at a first side of the substrate (e.g. top side in
FIG. 4 ); (3) during at least a part of operation (2), operating an ultrasound source to emit ultrasound at a second side of the substrate (e.g. bottom side inFIG. 4 ) opposite to the first side of the substrate. In some embodiments, the substrate comprises a via in a first side of the substrate, the via is not a through via, and the electrodeposition comprises electrodeposition into the via. In some embodiments, the deepest point of the via (the via's bottom inFIG. 4 ) is closer to the second side (e.g. bottom side) of the substrate than to the via's opening at the first side of the substrate. In some embodiments, at least some of the ultrasound enters the substrate before entering the solution (e.g. if thesource 170 contacts the substrate), and reaches the solution through the substrate. - Some embodiments provide an apparatus for performing electrodeposition onto a substrate, the apparatus comprising: a first electrode (e.g. 124) for connection to the substrate; a second electrode (e.g. 134); and at least one ultrasound source; wherein a region for containing the substrate is located between the first electrode and the ultrasound source (in
FIG. 4 , thesubstrate 110 is located between theelectrode 124 and the source 170). - Other embodiments and variations are within the scope of the invention, as defined by the appended claims.
Claims (41)
Priority Applications (2)
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US11/744,046 US20080271995A1 (en) | 2007-05-03 | 2007-05-03 | Agitation of electrolytic solution in electrodeposition |
PCT/US2008/062027 WO2008137459A2 (en) | 2007-05-03 | 2008-04-30 | Agitation of electrolytic solution in electrodeposition |
Applications Claiming Priority (1)
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US11/744,046 US20080271995A1 (en) | 2007-05-03 | 2007-05-03 | Agitation of electrolytic solution in electrodeposition |
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US20080271995A1 true US20080271995A1 (en) | 2008-11-06 |
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US11/744,046 Abandoned US20080271995A1 (en) | 2007-05-03 | 2007-05-03 | Agitation of electrolytic solution in electrodeposition |
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