US20080222884A1 - Packaging for chip-on-board pressure sensor - Google Patents
Packaging for chip-on-board pressure sensor Download PDFInfo
- Publication number
- US20080222884A1 US20080222884A1 US11/724,402 US72440207A US2008222884A1 US 20080222884 A1 US20080222884 A1 US 20080222884A1 US 72440207 A US72440207 A US 72440207A US 2008222884 A1 US2008222884 A1 US 2008222884A1
- Authority
- US
- United States
- Prior art keywords
- chip
- buffer layer
- board substrate
- pressure transducer
- board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
A method of packaging for chip-on-board pressure sensor that includes a buffer layer with a coefficient of thermal expansion (CTE) intermediate between the transducer and a main chip-on-board substrate by which thermally induced package stresses can be greatly reduced or eliminated. Additionally, the use of a buffer layer with higher stiffness (elastic modulus) than the chip-on-board substrate further prevents or reduces flexural (bending) stresses from being transferred to the transducer. Such a buffer layer also enables a wider choice of materials for bonding and stable performance of pressure sensor in harsh media and environmental conditions. The pressure transducer can be adhesively bonded to a ceramic layer, which in turn can be adhesively bonded to an epoxy laminate chip-on-board substrate.
Description
- Embodiments are generally related to pressure sensors and transducers. Embodiments are also related to Chip-on-Board components and configurations. Embodiments are additionally related to chip-on-board pressure sensor packages.
- Many processes and devices have been used in the field of pressure sensing. Pressure sensors are generally used and deployed wherever a need for monitoring and responding to pressure changes is necessary. Pressure sensors are commonly used in a variety of automotive, aerospace, commercial, industrial, and consumer applications.
- The operational environments in which pressure sensors are required to operate in these applications with high accuracy and repeatability can be very demanding. For example, extreme thermal conditions including thermal shocks in ranges from 160 C to −55 C, exposure to harsh and/or conductive media, withstand high overpressure (proof pressure) cycling without change in calibration and survive high peak (burst) pressures to protect system from potentially catastrophic leaks.
- In the case of a pressure sensor that relies upon the use of a pressure transducer (or sense element) consisting of piezoresistive silicon on an etched silicon diaphragm a most cost effective solution for operating in such environments is to use so called “back-side” sensing. With this arrangement the only parts of sensor which are exposed to the media are the electrically isolated cavity side of the pressure transducer, the adhesive used to bond the transducer die to a substrate and finally the substrate itself.
-
FIG. 1 illustrates a cross sectional view of a prior art direct chip-on-board mountedpressure sensor apparatus 100. The configuration illustrated inFIG. 1 generally includes a pressure transducer/die 102 that is attached to a printed circuit board (PCB)substrate 106 with the assistance of a die-attach adhesive 104. The bottom portion of thepressure sensor apparatus 100 includes ahousing 108. Atop cover 105 or protective portion is also included. The configuration depicted inFIG. 1 is generally presented for background and edification purposes only and is not considered a limiting feature of the disclosed embodiments. - For such a design to operate reliably under the conditions described above typically requires the use of attach materials which have high strength and chemical resistance. The rigid mounting of stress sensitive die (e.g., pressure transducer or pressure sense element) onto a substrate where there is large mismatch in thermal expansion coefficient between the die and the substrate can introduce high levels of package stress, which can result in output errors, non-repeatability and potentially, mechanical damage.
-
Pressure sensor apparatus 100 depicted inFIG. 1 is an example of a device in which a large mismatch in the thermal expansion coefficient between the die and substrate can exist. Also under extreme operating conditions stress can be transferred into the substrate from outer packaging such as encapsulation. These stresses can be transferred into the die attach adhesive and the pressure transducer itself. The resulting high levels of stress at or near the pressure transducer can cause non-repeatability errors due to effects such as creep, larger thermal errors (for example temperature coefficient of offset) and even destructive levels of mechanical stress. It is therefore believed that a solution to these problems lies in the implementation of an improved pressure sensors method and apparatus, which is disclosed in greater detail herein. - The following summary is provided to facilitate an understanding of some of the innovative features unique to the embodiments disclosed and is not intended to be a full description. A full appreciation of the various aspects of the embodiments can be gained by taking the entire specification, claims, drawings, and abstract as a whole.
- It is, therefore, one aspect of the present invention to provide for an improved pressure sensor.
- It is another aspect of the present invention to provide for a pressure sensor configuration that includes a mounting of a stress-sensitive die onto a substrate.
- It is a further aspect of the present invention to provide for an improved package for a chip-on-board pressure sensor.
- The aforementioned aspects and other objectives and advantages can now be achieved as described herein. A packaging method and apparatus for a chip-on-board pressure sensor is disclosed. A chip-on-board substrate can be provided and a pressure transducer connected to the chip-on-board substrate. A buffer layer is generally located between the pressure transducer and the chip-on-board substrate in order to form a pressure sensor in which thermally induced package stresses are prevented or reduced from being transferred to the pressure transducer.
- In general, such a buffer layer requires a coefficient of thermal expansion (CTE) intermediate between the pressure transducer and the chip-on-board substrate. Additionally a high stiffness (i.e., elastic modulus) of the buffer layer prevents or reduces flexural (e.g., bending) stresses from being transferred to the pressure transducer. In a preferred embodiment, buffer layer such a ceramic can be adhesively bonded to pressure transducer which in turn can be adhesively bonded to the main chip-on-board substrate. Importantly the proposed buffer layer also allows greater flexibility in adhesive selection and/or bonding methods when compared with direct chip-on-board mounting methods and devices, wherein several technical trade-offs have to be made to reliably attach the pressure transducer.
- The chip-on-board substrate typically carries the electrical circuitry and/or other die components and/or mechanical features for protection of components. In alternative embodiments, additional components and/or circuitry and/or mechanical features may be incorporated directly into the buffer layer.
- The accompanying figures, in which like reference numerals refer to identical or functionally-similar elements throughout the separate views and which are incorporated in and form a part of the specification, further illustrate the embodiments and, together with the detailed description, serve to explain the embodiments disclosed herein.
-
FIG. 1 illustrates a cross sectional-view of a prior art direct chip-on-board mounting method and system; -
FIG. 2 illustrates a cross-sectional view of a ceramic buffer layer for chip-on-board mounting utilized in packaging for chip-on-board pressure sensor, in accordance with a preferred embodiment; -
FIG. 3 illustrates views of a ceramic buffer layer adapted for use with a chip-on-board pressure sensor, in accordance with a preferred embodiment; and -
FIG. 4 illustrates a high-level flow chart of operations depicting logical operational steps of a method for implementing a ceramic buffer layer for chip-on-board mounting with packaging for a chip-on-board pressure sensor, in accordance with a preferred embodiment. - The particular values and configurations discussed in these non-limiting examples can be varied and are cited merely to illustrate at least one embodiment and are not intended to limit the scope thereof.
- Referring now to the drawings and in particular to
FIG. 2 , a cross-sectional view of a ceramic buffer layer for chip-on-board mounting for packaging a chip-on-boardpressure sensor apparatus 200 is illustrated, in accordance with a preferred embodiment. Note that inFIGS. 1-2 , identical or similar parts or elements are generally indicated by identical reference numerals. It can be appreciated, however, that theapparatus 200 differs from that of theapparatus 100 depicted inFIG. 1 .Apparatus 200 andapparatus 100 are discussed with respect to one another in order to contrast the differences and improvements of Applicant's improved embodiments. Thepressure sensor apparatus 200 depicted inFIG. 2 generally includes a pressure transducer 102 (e.g., sensor die) that is attached to a printed circuit board (PCB)substrate 106 by means of an adhesive 104. - The
ceramic buffer layer 202 can be bonded to thepressure transducer 102 by an adhesive 204 which in turn is adhesively bonded to a main chip-on-board substrate 106 (such as the substrate disclosed in the configuration ofFIG. 1 ), which can comprise, for example, an FR4 epoxy laminate. The typical CTE (coefficient of thermal expansion) of a PCB (printed circuit board) laminate in an x-y plane is typically 14 ppm/C (parts per million/C) at 25° C. Thepressure transducer 102 shown inFIG. 1 generally includes silicon (typical CTE 2.6 ppm/C at 25° C.) that is anodically bonded to glass layer (typical CTE 3.3 ppm/K at 25° C.). Note that thecomponents FIG. 1 , although not specifically identified inFIG. 2 , can be incorporated into the configuration ofFIG. 2 . Such components are not specifically identified in the illustration ofFIG. 2 in order to focus the reader's attention on the different and improved components and configuration ofapparatus 200. - Advantageously, the CTE of the
ceramic layer 202 such as Alumina 96% Al203 is typically 6 ppm/K at 25° C. which is intermediate between that of the transducer and the substrate. Therefore, the level of differential thermal expansion between the die and its point of attachment is greatly reduced by the presence of the buffer layer. Furthermore the elastic modulus of ceramic is typically 300 GPa, which can be considered to provide sufficient stiffness to prevent flexure stresses from the chip-on-board substrate and external packaging from transferring to the pressure transducer. -
FIG. 3 illustrates views of such a ceramic buffer layer component for a chip-on-board pressure sensor 300, which can be implemented in accordance with a preferred embodiment. A plan view ofceramic buffer layer 302 is with length/breadth 3mm 308. A side view of ceramic buffer layer 306 generally includes a through-hole 304 for pressure inlet as indicated inFIG. 3 . -
FIG. 4 illustrates a high-level flow chart of operations depicting a method 400 for enabling a chip-on-board assembly for a pressure sensor, in accordance with a preferred embodiment. As indicated atblock 401, a wafer of one or more pressure transducers can be created. Next, as depicted atblock 402, an optional operation can be implemented in which the wafer (silicon) is bonded to glass in order to constrain the wafer. Thereafter as illustrated atblock 403, an operation can be processed in order to singulated the pressure transducer die from the wafer. Next as depicted atblock 404, the die can be bonded to the buffer layer described previously. Thereafter, as depicted atblock 405, an optional step can be processed in order to singulated the buffer layer assemblies from the array/panel. The buffer layer can then be bonded to the chip-on-board substrate as indicated atblock 406 and the pressure transducer then wire-bonded to the chip-on-board substrate. Thereafter, as indicated atblock 407, the assembly of the chip-on-board substrate (additional components, protective cover etc) can be completed, following thereafter by the operation depicted atblock 408 involving assembly of the chip-on-board platform into external packaging for applications. - One possible fabrication process for implementing the method 400 depicted in
FIG. 4 can be summarized generally as follows: - Step 1: Create wafer of pressure transducers
- Step 2: Optional: Bond Silicon wafer to glass constraint wafer
- Step 3: Singulate pressure transducer die from wafer
- Step 4: Bond die to buffer layer
- Step 5: Optional: Singulate buffer layer assemblies from array/panel
- Step 5: Bond buffer layer to chip-on-board substrate
- Step 6: Wire bond pressure transducer to chip-on board substrate
- Step 7: Complete assembly of chip-on-board substrate (additional components, protective cover etc).
- Step 8: Assembly of the chip-on-board platform into external packaging for application.
- Note that in an alternative embodiment as described with respect to Step 2 (i.e., also see block 402) above, a pressure transducer can be provided without the additional anodically bonded glass layer. Also as indicated by Step 5 (i.e., also see block 405) above, the manufacturing and handling of multiple buffer layer structures in an array (i.e., batch) form can be achieved. In another alternative embodiment, the use of material other than ceramic such as metal or plastic, but having a CTE intermediate between that of the transducer and the chip-on-board substrate and a higher elastic modulus than the substrate can be used. Additionally, Step 6, although not specifically shown in
FIG. 4 can be implemented in accordance with the general methodology of method 400. It can be appreciated that variations to method 400 can be implemented in accordance with alternative embodiments while still remaining within spirit and scope of method 400. - In yet another embodiment a buffer layer can be attached to the substrate using a eutectic metal solder. Additionally, this could be used to provide a pressure seal to the substrate or alternatively an electrical connection to the substrate with the addition of an insulating under-fill adhesive to complete the seal.
- In another embodiment to enable additional electrical connections to the pressure transducer and/or chip-on-board substrate, electrical circuit traces, vias, and/or bond pads can be provided on the buffer layer. As further alternative embodiment involves implementing the buffer layer in a multilayer structure with a process such as high temperature co-fired ceramic (HTCC) or low temperature co-fired ceramic (LTCC). Such features can also be used to enable additional mechanical features such as cavities for protection of the pressure transducer and/or buried channels for fluid path to back-side, and/or circuit traces to simplify design and assembly
- Based on the foregoing, it can be appreciated that the pressure sensor method and apparatus described herein therefore overcomes the aforementioned problems associated with the prior art by creating a compact packaging for a pressure sensor that includes chip-on-board assembly capabilities, which enables efficient and robust fabrication for various aerospace, automotive, industrial, consumer, commercial and other applications.
- It will be appreciated that variations of the above-disclosed and other features and functions, or alternatives thereof, may be desirably combined into many other different systems or applications. Also that various presently unforeseen or unanticipated alternatives, modifications, variations or improvements therein may be subsequently made by those skilled in the art which are also intended to be encompassed by the following claims.
Claims (20)
1. A packaging method for a chip-on-board pressure sensor, comprising:
providing a chip-on-board substrate;
connecting at least one pressure transducer to said chip-on-board substrate;
locating a buffer layer between said at least one pressure transducer and said chip-on-board substrate, wherein said buffer layer includes a coefficient of thermal expansion between that of said at least one pressure transducer and said chip-on-board substrate.
2. The method of claim 1 wherein said buffer layer comprises a material with higher elastic modulus than said chip-on-board substrate.
3. The method of claim 1 wherein said buffer layer comprises a ceramic material.
4. The method of claim 1 wherein said chip-on-board substrate comprises an epoxy laminate material.
5. The method of claim 1 wherein locating said buffer layer between said at least one pressure transducer and said chip-on-board substrate further comprises adhesively bonding said buffer layer to said at least one pressure transducer.
6. The method of claim 1 further comprising attaching said buffer layer to said chip-on-board substrate using an eutectic metal solder.
7. The method of claim 1 further comprising configuring at least one electrical circuit trace, at least one via, and at least one bond pad upon said buffer layer.
8. The method of claim 1 configuring said buffer layer to further comprise a multilayer structure comprising a plurality of cavities or buried channels.
9. The method of claim 1 further comprising:
creating a plurality of buffer layer structures in an array for batch assembly of said at least one pressure transducer to said array.
10. The method of claim 1 further comprising configuring said at least one pressure transducer to comprise silicon anodically bonded to a glass layer.
11. A packaging method for a chip-on-board pressure sensor, comprising:
providing a chip-on-board substrate;
connecting at least one pressure transducer to said chip-on-board substrate;
locating a buffer layer between said at least one pressure transducer and said chip-on-board substrate; and
configuring said at least one pressure transducer to comprise silicon anodically bonded to a glass layer, wherein said buffer layer comprises a material with higher elastic modulus than said chip-on-board substrate and wherein said buffer layer includes a coefficient of thermal expansion between that of said at least one pressure transducer and said chip-on-board substrate.
12. The method of claim 11 wherein said buffer layer comprises a ceramic material and said chip-on-board substrate comprises an epoxy laminate material.
13. The method of claim 11 wherein locating said buffer layer between said at least one pressure transducer and said chip-on-board substrate further comprises adhesively bonding said buffer layer to said at least one pressure transducer.
14. The method of claim 11 further comprising attaching said buffer layer to said chip-on-board substrate using an eutectic metal solder.
15. The method of claim 11 further comprising configuring at least one electrical circuit trace, at least one via, and at least one bond pad upon said buffer layer.
16. The method of claim 11 configuring said buffer layer to further comprise a multilayer structure comprising a plurality of cavities or buried channels.
17. A chip-on-board pressure sensor apparatus, comprising:
a chip-on-board substrate;
at least one pressure transducer connected to said chip-on-board substrate;
a buffer layer located between said at least one pressure transducer and said chip-on-board substrate, wherein said buffer layer is adhesively bonded to said at least one pressure transducer and wherein said buffer layer includes a coefficient of thermal expansion between that of said at least one pressure transducer and said chip-on-board substrate.
18. The apparatus of claim 17 wherein said buffer layer comprises a material with higher elastic modulus than said chip-on-board substrate.
19. The apparatus of claim 17 wherein said buffer layer comprises a ceramic material and said chip-on-board substrate comprises an epoxy laminate material.
20. The apparatus of claim 17 further comprising:
at least one electrical circuit trace, at least one via, and at least one bond pad configured upon said buffer layer; and
a plurality of buffer layer structures configured in an array for batch assembly of said at least one pressure transducer to said array.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/724,402 US20080222884A1 (en) | 2007-03-14 | 2007-03-14 | Packaging for chip-on-board pressure sensor |
US12/910,729 US8276460B2 (en) | 2007-03-14 | 2010-10-22 | Packaging for chip-on-board pressure sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/724,402 US20080222884A1 (en) | 2007-03-14 | 2007-03-14 | Packaging for chip-on-board pressure sensor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/910,729 Continuation US8276460B2 (en) | 2007-03-14 | 2010-10-22 | Packaging for chip-on-board pressure sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080222884A1 true US20080222884A1 (en) | 2008-09-18 |
Family
ID=39761199
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/724,402 Abandoned US20080222884A1 (en) | 2007-03-14 | 2007-03-14 | Packaging for chip-on-board pressure sensor |
US12/910,729 Active 2027-05-01 US8276460B2 (en) | 2007-03-14 | 2010-10-22 | Packaging for chip-on-board pressure sensor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/910,729 Active 2027-05-01 US8276460B2 (en) | 2007-03-14 | 2010-10-22 | Packaging for chip-on-board pressure sensor |
Country Status (1)
Country | Link |
---|---|
US (2) | US20080222884A1 (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090282925A1 (en) * | 2008-05-14 | 2009-11-19 | Honeywell International Inc. | Asic compensated pressure sensor with soldered sense die attach |
US20110036176A1 (en) * | 2007-03-14 | 2011-02-17 | Honeywell International Inc. | Packaging for chip-on-board pressure sensor |
CN102815660A (en) * | 2011-06-09 | 2012-12-12 | 安华高科技无线Ip(新加坡)私人有限公司 | Packaged device including interposer and method of attaching die to substrate |
US8371176B2 (en) | 2011-01-06 | 2013-02-12 | Honeywell International Inc. | Media isolated pressure sensor |
US8375799B2 (en) | 2010-12-10 | 2013-02-19 | Honeywell International Inc. | Increased sensor die adhesion |
US8516897B1 (en) | 2012-02-21 | 2013-08-27 | Honeywell International Inc. | Pressure sensor |
EP2708867A1 (en) * | 2012-09-14 | 2014-03-19 | Sensata Technologies, Inc. | Pressure sensor |
US9027410B2 (en) | 2012-09-14 | 2015-05-12 | Sensata Technologies, Inc. | Hermetically glass sealed pressure sensor |
TWI559410B (en) * | 2016-05-09 | 2016-11-21 | Method for suppressing warpage of materials by differential pressure method | |
DE102015121401A1 (en) * | 2015-12-09 | 2017-06-14 | ETO SENSORIC GmbH | Pressure sensor device |
CN108726468A (en) * | 2018-08-08 | 2018-11-02 | 宁波琻捷电子科技有限公司 | Sensor-packaging structure, method and encapsulating mould |
US10323998B2 (en) | 2017-06-30 | 2019-06-18 | Sensata Technologies, Inc. | Fluid pressure sensor |
US10488289B2 (en) | 2016-04-11 | 2019-11-26 | Sensata Technologies, Inc. | Pressure sensors with plugs for cold weather protection and methods for manufacturing the plugs |
US10545064B2 (en) | 2017-05-04 | 2020-01-28 | Sensata Technologies, Inc. | Integrated pressure and temperature sensor |
US10557770B2 (en) | 2017-09-14 | 2020-02-11 | Sensata Technologies, Inc. | Pressure sensor with improved strain gauge |
US10724907B2 (en) | 2017-07-12 | 2020-07-28 | Sensata Technologies, Inc. | Pressure sensor element with glass barrier material configured for increased capacitive response |
US10871413B2 (en) | 2016-04-20 | 2020-12-22 | Sensata Technologies, Inc. | Method of manufacturing a pressure sensor |
CN114112120A (en) * | 2021-11-12 | 2022-03-01 | 南京英锐创电子科技有限公司 | Sensor packaging structure and method |
DE102020212836A1 (en) | 2020-10-12 | 2022-04-14 | Intelligente Sensorsysteme Dresden Gmbh | Sensor system for determining the pressure of a fluid |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006056172A1 (en) * | 2006-11-27 | 2008-05-29 | Endress + Hauser Gmbh + Co. Kg | Elastic ceramic body and pressure sensor with a resilient ceramic body |
KR101051576B1 (en) * | 2009-09-15 | 2011-07-22 | 삼성전기주식회사 | Optimized battlefield power package |
CN104684840A (en) | 2012-07-31 | 2015-06-03 | 惠普发展公司,有限责任合伙企业 | Device including interposer between semiconductor and substrate |
US9214402B2 (en) | 2014-01-10 | 2015-12-15 | Freescale Semiconductor, Inc. | Pressure sensor device with gel retainer |
DE102014119396A1 (en) * | 2014-12-22 | 2016-06-23 | Endress + Hauser Gmbh + Co. Kg | Pressure measuring device |
US9952110B2 (en) * | 2016-03-29 | 2018-04-24 | Infineon Technologies Ag | Multi-die pressure sensor package |
DE102017205837A1 (en) * | 2017-04-05 | 2018-10-11 | Robert Bosch Gmbh | Sensor element for detecting at least one property of a fluid medium |
CN214299264U (en) * | 2020-11-17 | 2021-09-28 | 瑞声声学科技(深圳)有限公司 | MEMS sensor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4680569A (en) * | 1983-09-30 | 1987-07-14 | Kabushiki Kaisha Toshiba | Semiconductor pressure sensor |
US5285690A (en) * | 1992-01-24 | 1994-02-15 | The Foxboro Company | Pressure sensor having a laminated substrate |
US5695590A (en) * | 1992-09-01 | 1997-12-09 | Rosemount Inc. | Anodic bonding method for making pressure sensor |
US6516513B2 (en) * | 2000-09-19 | 2003-02-11 | International Business Machines Corporation | Method of making a CTE compensated chip interposer |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5465626A (en) * | 1994-04-04 | 1995-11-14 | Motorola, Inc. | Pressure sensor with stress isolation platform hermetically sealed to protect sensor die |
US5454270A (en) * | 1994-06-06 | 1995-10-03 | Motorola, Inc. | Hermetically sealed pressure sensor and method thereof |
FR2764113B1 (en) * | 1997-05-28 | 2000-08-04 | Motorola Semiconducteurs | SENSOR DEVICE AND MANUFACTURING METHOD THEREOF |
US20020029639A1 (en) * | 2000-01-19 | 2002-03-14 | Measurement Specialities, Inc. | Isolation technique for pressure sensing structure |
US6550337B1 (en) * | 2000-01-19 | 2003-04-22 | Measurement Specialties, Inc. | Isolation technique for pressure sensing structure |
US6769319B2 (en) | 2001-07-09 | 2004-08-03 | Freescale Semiconductor, Inc. | Component having a filter |
US6946742B2 (en) | 2002-12-19 | 2005-09-20 | Analog Devices, Inc. | Packaged microchip with isolator having selected modulus of elasticity |
US6768196B2 (en) | 2002-09-04 | 2004-07-27 | Analog Devices, Inc. | Packaged microchip with isolation |
US7082835B2 (en) | 2003-06-18 | 2006-08-01 | Honeywell International Inc. | Pressure sensor apparatus and method |
US7100453B2 (en) | 2003-12-30 | 2006-09-05 | Honeywell International Inc. | Modified dual diaphragm pressure sensor |
US20060059994A1 (en) | 2004-09-21 | 2006-03-23 | Honeywell International, Inc. | Carrier to port mechanical interface for a pressure sensor |
US7086290B2 (en) | 2004-12-09 | 2006-08-08 | Honeywell International Inc. | Pressure sensor with single deposit adhesive |
US7401525B2 (en) | 2005-03-23 | 2008-07-22 | Honeywell International Inc. | Micro-machined pressure sensor with polymer diaphragm |
US20080222884A1 (en) | 2007-03-14 | 2008-09-18 | Honeywell International Inc. | Packaging for chip-on-board pressure sensor |
US20080251866A1 (en) | 2007-04-10 | 2008-10-16 | Honeywell International Inc. | Low-stress hermetic die attach |
-
2007
- 2007-03-14 US US11/724,402 patent/US20080222884A1/en not_active Abandoned
-
2010
- 2010-10-22 US US12/910,729 patent/US8276460B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4680569A (en) * | 1983-09-30 | 1987-07-14 | Kabushiki Kaisha Toshiba | Semiconductor pressure sensor |
US5285690A (en) * | 1992-01-24 | 1994-02-15 | The Foxboro Company | Pressure sensor having a laminated substrate |
US5695590A (en) * | 1992-09-01 | 1997-12-09 | Rosemount Inc. | Anodic bonding method for making pressure sensor |
US6516513B2 (en) * | 2000-09-19 | 2003-02-11 | International Business Machines Corporation | Method of making a CTE compensated chip interposer |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110036176A1 (en) * | 2007-03-14 | 2011-02-17 | Honeywell International Inc. | Packaging for chip-on-board pressure sensor |
US8276460B2 (en) | 2007-03-14 | 2012-10-02 | Honeywell International Inc. | Packaging for chip-on-board pressure sensor |
US20090282925A1 (en) * | 2008-05-14 | 2009-11-19 | Honeywell International Inc. | Asic compensated pressure sensor with soldered sense die attach |
US7930944B2 (en) | 2008-05-14 | 2011-04-26 | Honeywell International Inc. | ASIC compensated pressure sensor with soldered sense die attach |
US8375799B2 (en) | 2010-12-10 | 2013-02-19 | Honeywell International Inc. | Increased sensor die adhesion |
US8371176B2 (en) | 2011-01-06 | 2013-02-12 | Honeywell International Inc. | Media isolated pressure sensor |
CN102815660A (en) * | 2011-06-09 | 2012-12-12 | 安华高科技无线Ip(新加坡)私人有限公司 | Packaged device including interposer and method of attaching die to substrate |
US8516897B1 (en) | 2012-02-21 | 2013-08-27 | Honeywell International Inc. | Pressure sensor |
EP2708867A1 (en) * | 2012-09-14 | 2014-03-19 | Sensata Technologies, Inc. | Pressure sensor |
CN103674395A (en) * | 2012-09-14 | 2014-03-26 | 森萨塔科技公司 | Pressure sensor and method for assembling the same |
US8820170B2 (en) | 2012-09-14 | 2014-09-02 | Sensata Technologies, Inc. | Pressure sensor |
US9027410B2 (en) | 2012-09-14 | 2015-05-12 | Sensata Technologies, Inc. | Hermetically glass sealed pressure sensor |
DE102015121401A1 (en) * | 2015-12-09 | 2017-06-14 | ETO SENSORIC GmbH | Pressure sensor device |
US10488289B2 (en) | 2016-04-11 | 2019-11-26 | Sensata Technologies, Inc. | Pressure sensors with plugs for cold weather protection and methods for manufacturing the plugs |
US10871413B2 (en) | 2016-04-20 | 2020-12-22 | Sensata Technologies, Inc. | Method of manufacturing a pressure sensor |
TWI559410B (en) * | 2016-05-09 | 2016-11-21 | Method for suppressing warpage of materials by differential pressure method | |
US10388613B2 (en) | 2016-05-09 | 2019-08-20 | AbleGo Technology Co., Ltd. | Method for suppressing material warpage by means of pressure difference |
US10545064B2 (en) | 2017-05-04 | 2020-01-28 | Sensata Technologies, Inc. | Integrated pressure and temperature sensor |
US11105698B2 (en) | 2017-05-04 | 2021-08-31 | Sensata Technologies, Inc. | Method of assembling a sensing device having a double clinch seal |
US10323998B2 (en) | 2017-06-30 | 2019-06-18 | Sensata Technologies, Inc. | Fluid pressure sensor |
US10969288B2 (en) | 2017-06-30 | 2021-04-06 | Sensata Technologies, Inc. | Fluid pressure sensor |
US10724907B2 (en) | 2017-07-12 | 2020-07-28 | Sensata Technologies, Inc. | Pressure sensor element with glass barrier material configured for increased capacitive response |
US10557770B2 (en) | 2017-09-14 | 2020-02-11 | Sensata Technologies, Inc. | Pressure sensor with improved strain gauge |
CN108726468A (en) * | 2018-08-08 | 2018-11-02 | 宁波琻捷电子科技有限公司 | Sensor-packaging structure, method and encapsulating mould |
DE102020212836A1 (en) | 2020-10-12 | 2022-04-14 | Intelligente Sensorsysteme Dresden Gmbh | Sensor system for determining the pressure of a fluid |
CN114112120A (en) * | 2021-11-12 | 2022-03-01 | 南京英锐创电子科技有限公司 | Sensor packaging structure and method |
Also Published As
Publication number | Publication date |
---|---|
US8276460B2 (en) | 2012-10-02 |
US20110036176A1 (en) | 2011-02-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8276460B2 (en) | Packaging for chip-on-board pressure sensor | |
CN101957245B (en) | Sensor package assembly having unconstrained sense die | |
EP2189773B1 (en) | Design of wet/wet differential pressure sensor based on microelectronic packaging process | |
US7377177B1 (en) | Pressure sensor method and apparatus | |
US6255728B1 (en) | Rigid encapsulation package for semiconductor devices | |
AU2011211369B2 (en) | Pressure sensor | |
EP2316008B1 (en) | Sensor device packaging and corresponding method | |
US8371176B2 (en) | Media isolated pressure sensor | |
CN107110729B (en) | Pressure measuring device | |
US7930944B2 (en) | ASIC compensated pressure sensor with soldered sense die attach | |
AU2011254029A1 (en) | Force sensor | |
CN102980711A (en) | Packaged sensor with multiple sensors elements | |
US8234926B2 (en) | Pressure sensor with a closed cavity containing an inert filling medium | |
EP2279398A2 (en) | Media isolated differential pressure sensor with cap | |
JP5331546B2 (en) | Pressure sensor module and electronic component | |
JP2014048072A (en) | Pressure sensor module | |
EP3515858A1 (en) | Method of manufacturing a sensor using anodic bonding | |
EP1634046B1 (en) | Pressure sensor with integrated structure | |
JP3915605B2 (en) | Pressure sensor device | |
US6543292B1 (en) | Piezoresistive air pressure sensor | |
JP5804445B2 (en) | Semiconductor pressure sensor | |
CN219044842U (en) | MEMS sensor packaging structure | |
JP2008122135A (en) | Pressure sensor apparatus | |
Wohlgemuth et al. | P1. 14-Miniaturised Ceramic Packages for Piezoresistive Pressure Sensors | |
JP2009075041A (en) | Pressure sensor for measuring relative pressure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: HONEYWELL INTERNATIONAL INC., NEW JERSEY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BRADLEY, ALISTAIR D.;RICKS, LAMAR F.;REEL/FRAME:019097/0137 Effective date: 20070302 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |