US20080210273A1 - Batch photoresist dry strip and ash system and process - Google Patents
Batch photoresist dry strip and ash system and process Download PDFInfo
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- US20080210273A1 US20080210273A1 US12/117,981 US11798108A US2008210273A1 US 20080210273 A1 US20080210273 A1 US 20080210273A1 US 11798108 A US11798108 A US 11798108A US 2008210273 A1 US2008210273 A1 US 2008210273A1
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- plasma
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3342—Resist stripping
Abstract
Photoresist stripping is provided that employs batch processing to maximize throughput and an upstream plasma activation source using vapor or gas processing to efficiently create reactive species and minimize chemical consumption. An upstream plasma activation source efficiently creates reactive species remote from the photoresist on the substrate surfaces. Either a remote plasma generator upstream of the processing chamber or an integrated plasma unit within the processing chamber upstream of the processing volume may be used. Plasma processing gas is introduced from a side of a stack of wafers and flows across the wafers. Processing gas may be forced across the surfaces of the wafers in the column to an exhaust on the opposite side of the column, and the column may be rotated. An upstream plasma activation source enables a strip process to occur at low temperatures, for example below 600 degrees C., which are particularly advantageous in BEOL process flow. Integrated processes that combine dry and wet-like sequential processes are also provided. Oxidizing, reducing or fluorine-containing plasma can be employed. Wet stripping, using, for example, wafer vapor or ozone or both may be included, simultaneously or sequentially.
Description
- This application is a divisional of U.S. patent application Ser. No. 11/269,007, filed on Nov. 8, 2005, the entirety of which is incorporated by reference herein.
- This invention relates to the removal of photoresist in semiconductor wafer processing.
- Part of semiconductor manufacturing includes the patterning of structures onto silicon wafers. The patterning is carried out by depositing a layer of photoresist material, then exposing a pattern onto the photoresist layer to selectively and lithographically alter the properties of the layer, then etching the exposed photoresist layer to selectively remove an underlying material in accordance with the exposed pattern, then removing the remaining photoresist.
- Photoresist removal has been carried out by either batch wet-processing or single-wafer plasma dry processing. Batch wet-processing is commonly found in front-end on-line systems (FEOL) while single-wafer dry processing is commonly found in back-end on-line systems (BEOL). Initially, batch wet-stripping was used for resist removal, but processing costs were high and processing requirements were not satisfactorily met. Batch barrel plasma ashers were then tried, but wafer damage resulted. This led to the use of remote-plasma single-wafer dry systems. Companies providing the current dry stripping systems include Mattson, Novellus, Applied Materials and Axcelis. Patents describing some of these systems include U.S. Pat. Nos. 6,693,043, 6,638,875, 6,281,135, 6,630,406 and 6,834,656.
- Wet strip systems today still provide low throughput, high chemical consumption cost and high equipment cost and require an excessive oxidizing environment. Dry plasma strip systems still suffer from plasma damage to the wafer.
- Accordingly, there is a need for photoresist stripping that overcomes problems with the prior art.
- In accordance with principles of the present invention, photoresist stripping is provided that employs batch processing to maximize throughput and an upstream plasma activation source using vapor or gas processing to efficiently create reactive species and minimize chemical consumption.
- In accordance with the described embodiments of the present invention, a plasma activation source is provided upstream of the substrates to be processed to efficiently create reactive species remote from the photoresist on the substrate surfaces. In particular, a batch photoresist dry strip and ash system and method applies a plasma generated either by a remote plasma generator upstream of the processing chamber or by an integrated plasma unit within the processing chamber upstream of the processing volume in which are situated the substrates to be processed.
- In accordance with illustrated embodiments of the invention, plasma processing gas is introduced from a side of the wafers and caused to flow across the wafers. In certain embodiments, a plurality of wafers are stacked in a column in a vacuum processing chamber with the plasma generated or introduced along one side of the column and forced to flow across the surfaces of the wafers in the column to an exhaust on the opposite side of the column. The wafers are stacked in the column and may be rotated on a common axis as the processing gas flows across the wafers.
- In certain embodiments, the use of an upstream plasma activation source enables a strip process to occur at low temperatures, for example below 600 degrees C., which are particularly advantageous in BEOL process flow.
- Embodiments of the present invention combine batch photoresist-strip processing, plasma generation of reactive species remote from the wafers, and cross-flow of the reactive species across the wafers. With certain embodiments, integrated processes that combine dry and wet-like sequential processes are also provided. The integrated processes can include thermal processes, and can utilize wet-like strip processes using, for example, wafer vapor and ozone.
- The use of remote plasma activation allows the advantages of single wafer plasma dry strip processes to be applied to a batch processing system in addition to reducing wafer damage.
- Various embodiments of the process of the invention include providing oxidizing, reducing or fluorine-containing plasma environment, and providing damage minimization to advanced materials such as low-k films and copper.
- The invention provides the advantages that a conventional single-wafer dry-strip system provides over wet-strip systems, such as reduced chemical consumption and reduced chemical disposal as well as providing less damage to underlying advanced materials such as low-k film and copper. At the same time, the invention provides the advantages of wet-strip processes over dry-strip processes, such as the ability for water vapor and ozone processing to be used in a non-plasma environment in the same system.
- Embodiments of the invention may use a hot wall process chamber, which can mitigate residue buildup and effectively increase system uptime.
- Systems according to the present invention can utilize a smaller footprint apparatus than certain prior art strip systems.
- These and other objects and advantages of the present invention will be more readily apparent from the following detailed description of illustrated embodiments of the invention.
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FIG. 1 is a diagram of one embodiment of a batch photoresist dry strip and ash system according to principles of the present invention. -
FIG. 2 is a diagram similar toFIG. 1 of another embodiment of a batch photoresist dry strip and ash system according to principles of the present invention. -
FIG. 3 is another diagram similar toFIGS. 1 and 2 of still another embodiment of a batch photoresist dry strip and ash system according to principles of the present invention. -
FIG. 3A is a cross-sectional plan diagram of the embodiment ofFIG. 3 . -
FIG. 3B is a cross-sectional elevational diagram of the embodiment ofFIG. 3 . -
FIG. 4 is a flowchart of a batch photoresist dry strip and ash process according to principles of the present invention. -
FIG. 1 illustrates one embodiment of a photo-resiststripping processing apparatus 100 according to principles of the present invention. Theapparatus 100 is a batch processing apparatus that includes aprocess chamber 110 that contains aprocess tube 125. Thechamber 110 has anexhaust port 180 connected to a vacuum pumping system (not shown) that is configured to maintain a pre-determined atmospheric or below atmospheric pressure in theprocessing chamber 110. A substrate holder is in the form of acolumn 135 contained in thetube 125 and configured to hold a plurality ofsemiconductor wafer substrates 40 in a vertical stack. - A
gas source 198 is provided to supply a plurality of gases into theprocess tube 25 through the gas supply lines. Thegas source 198 is connected to a remoteplasma generating unit 196 which forms a plasma in the process gas and delivers the gas to agas supply line 145 through which the plasma gas is introduced into thechamber 110. - In the
apparatus 100, plasma containing gas is introduced into thechamber 110 throughinlet line 145 from which it flows along oneside 197 of thetube 125. From the oneside 197 of thetube 125, the plasma gas flows across the surfaces of thewafers 40 supported on thecolumn 135 to anopposite side 199 of thetube 125, from which it flows through theoutlet 180 out of thechamber 110. - Another embodiment of a processing apparatus 10 according to the present invention is illustrated in the simplified block diagram of
FIG. 2 . The apparatus 10 is a batch processing apparatus that includes a process chamber 11 and aprocess tube 25 that has an upper end connected to anexhaust pipe 80 and a lower end hermetically joined to alid 27 of acylindrical manifold 12. Theexhaust pipe 80 discharges gases from theprocess tube 25 to avacuum pumping system 88 to maintain a pre-determined atmospheric or below atmospheric pressure in the processing system 10. A substrate holder is in the form of acolumn 35 and is configured for holding a plurality ofsemiconductor wafer substrates 40 in a vertical stack, in respective horizontal planes at vertical intervals, in theprocess tube 25. Thesubstrate holder 35 resides on aturntable 26 that is mounted on a rotatingshaft 21 penetrating thelid 27 and driven by amotor 28. Theturntable 26 can be rotated during processing or, alternately, can be stationary during processing. Thelid 27 is mounted on anelevator 22 for transferring thesubstrate holder 35 in and out of theprocess tube 25. When thelid 27 is positioned at its uppermost position, thelid 27 is adapted to close the open end of themanifold 12. - A plurality of gas supply lines can be arranged around the
manifold 12 to supply a plurality of gases into theprocess tube 25 through the gas supply lines. InFIG. 2 , only onegas supply line 45 among the plurality of gas supply lines is shown. Thegas supply line 45 is connected to agas injection system 94. Acylindrical heat reflector 30 is disposed so as to cover thereaction tube 25. Theheat reflector 30 has a mirror-finished inner surface to suppress dissipation of radiation heat radiated bymain heater 20,bottom heater 65, top heater 15, and exhaust pipe heater 70. A helical cooling water passage (not shown) is formed in the wall of the process chamber 10 as a cooling medium passage. - A
vacuum pumping system 88 comprises avacuum pump 86, a trap 84, andautomatic pressure controller 82. Thevacuum pump 86 can, for example, include a dry vacuum pump capable of a pumping speed up to at least 20,000 liters per second. During processing, gases can be introduced into the process chamber 10 via thegas injection system 94 and the process pressure can be adjusted by theautomatic pressure controller 82. The trap 84 can collect unreacted precursor material and by-products from the process chamber 11. - The
process monitoring system 92 comprises asensor 75 capable of real-time process monitoring. Acontroller 90 includes a microprocessor, a memory, and a digital I/O port capable of generating control voltages sufficient to communicate and activate inputs to the processing system 10 as well as monitor outputs from the processing system 10. Moreover, thecontroller 90 is coupled to and can exchange information withgas injection system 94,motor 28,process monitoring system 92,heaters vacuum pumping system 88. - Coupled to an inlet of the
gas injection system 94 is aplasma generator 96, which has an inlet to which is coupled aprocess gas source 98. Gas from theprocess gas source 98 is injected into theplasma generator 96 which forms a plasma in the process gas. This plasma containing gas is introduced into thegas injection system 94, which injects the gas into the chamber 11 along oneside 97 of thecolumn 35, from which the plasma containing gas flows across the surfaces ofwafers 40 supported on thecolumn 35 to theopposite side 99 of thecolumn 35, from which it is exhausted through theexhaust pipe 80. -
FIGS. 3 , 3A and 3B illustrate another embodiment of the invention in which aprocessing apparatus 200 is provided with in integrated plasma generator in the form of aplasma generating manifold 296, where a plasma is produced in an injected gas, for example, by coupling RF energy thereto. Theapparatus 200 includes aprocessing chamber 210 having aprocess tube 225 therein. Anexhaust pipe 280 is connected to thechamber 210 to discharge gases from theprocess tube 225 from along oneside 299 of theprocess tube 225 to a vacuum pumping system (not shown). A substrate holder is provided in the form of acolumn 235 that is configured to hold a plurality ofsemiconductor wafer substrates 40 in a vertical stack. Thesubstrate holder 235 resides on aturntable 226 that is mounted on arotating shaft 221 driven by a motor (not shown). Theturntable 226 can be rotated for rotating thewafers 40 thereon during processing. - One or more gas supply sources can be connected to an
inlet manifold 212 to supply one or more gases into a plasmagas generating manifold 296 along oneside 297 of theprocess tube 225, from which side the plasma process gas can flow across the surfaces ofwafers 40 on thecolumn 235 while thewafers 40 are being rotated on thecolumn 235 by therotating turntable 226. The gas flows across thewafers 40 removing the photo-resist therefrom, then flows to theexhaust collecting manifold 299 on the opposite side of thetube 225 from theplasma generating manifold 297. From theexhaust manifold 299 the gases and removed photo-resist are removed from thechamber 210 via theexhaust 280. - With the
systems - For certain other applications, including photoresist removal applications, a reducing environment may be best suited to remove the photoresist. For these situations, to create the reducing environment, process gases, such as H2, H2 and inert gas, NH3, or NH3, are introduced into the plasma generating unit or manifold. The inert gas can be, but is not necessarily limited to, N2, He, or Ar. The reducing process gas can be 0.01 to 50% by volume of the total gas.
- For certain other applications, including photoresist removal applications, a fluorine-containing environment might be best suited to remove the photoresist. For these situations, to create the fluorine-containing environment, process gases such as F2, F2 and inert gas, NF3, NF3 and inert gas, CF4, or CF4 and inert gas can be introduced into the plasma generating unit or manifold. The inert gas can be, but is not necessarily limited to, N2, He, and Ar. The fluorine-containing process gas can be 0.01 to 50% by volume of the total gas.
- For still other applications that may include photoresist removal, an oxidizing or reducing environment with a small amount of fluorine or fluorine-containing compounds may be best suited to remove the photoresist. For these situations, a fluorine-containing gas such as F2, F2 and inert gas, NF3, NF3 and inert gas, CF4, or CF4 and inert gas may be introduced into the plasma generating unit or manifold at a compositional percentage between 0.01% and 50% by volume. The remaining compositional volume may be made up of either an oxidizing or reducing gas as described above. The inert gas can be, but is not necessarily limited to, N2, He, or Ar.
- Total flows of such gases can range from 100 sccm to 50,000 sccm during the stripping process. Preferred gas flow range lies in the 1000 to 10,000 sccm range. Pressure can range from 50 milliTorr to 650 Torr range. Preferred pressure range lies in the 100 milliTorr to 10 Torr range. Temperature can range from 80 C to 900 C. Preferred temperature range lies in the 100 C to 600 C range.
- The plasma gas can be caused to flow across the substrates from one side to another from which it can be removed from the process chamber through an exhaust manifold. Prior art using multiple substrates relied on diffusion of the etching gases to reach the substrates. Herein, the reactive gas flows across the substrate surface by convection or convection and diffusion. At the same time, substrates can be rotating during the process.
- The processes described above may proceed in accordance with the steps set forth in the flow chart of
FIG. 4 . - For certain applications in which combination dry-plasma and wet-strip processes are determined to be best, high temperature water vapor, ozone, or a combination of water vapor and ozone, can assist in the removal of the photoresist. The water vapor or ozone process would be similar to a wet strip process, but in this case, the water would be in a vapor state rather than a liquid state. In this case, the water vapor or ozone or both may be generated by a third party vendor and can be equivalently substituted with radical oxygen generated by the plasma generating unit. The water vapor and ozone would then react on the substrate surface to remove photoresist. The process conditions (gas flow, temperature, pressure) would be similar to those set forth above. The water vapor or ozone may used in place of, in combination with, or in sequence with, the plasma alternatives described above.
- In certain embodiments of the invention, sequential processing is enabled. For example, a photoresist can have a top layer of heavily carbonized nature while the bottom layer might be of a normal hydrogenated photoresist nature. Typically, semiconductor manufacturers would need to employ plasma resist stripping techniques on the upper layer in equipment suitable for that process and then use wet stripping techniques on the bottom layer in other equipment suitable for that process. With the present invention, one can employ a sequential dry-etch and wet-strip-like sequence, with water vapor and ozone or plasma stripping following a dry plasma environment stripping process to improve the removal of the resist.
- Although only certain exemplary embodiments of this invention have been described in detail above, those skilled in the art will readily appreciate that many modifications are possible in the exemplary embodiments without materially departing from the novel teachings and advantages of this invention. Accordingly, all such modifications are intended to be included within the scope of this invention.
Claims (10)
1. An apparatus for removing photo-resist from semiconductor wafers comprising:
a vacuum chamber having a substrate-support column therein for supporting a plurality of semiconductor wafers in a vertical stack thereon;
a processing gas inlet coupled to the chamber and configured to introduce process gas into the chamber along one side of the column;
an exhaust outlet coupled to the chamber and configured to remove gas from the chamber from a side thereof opposite said one side;
a plasma generator situated in-line with the processing gas inlet and operable to form a plasma in process gas being introduced along said one side of the column; and
a gas flow control system coupled to the inlet and the outlet and configured to flow process gas containing plasma from said one side of the column and horizontally across surfaces of wafers supported on the column and toward the outlet.
2. The apparatus of claim 1 wherein:
the substrate-support column being rotatable about a vertical axis to rotate the semiconductor wafers supported thereon.
3. The apparatus of claim 1 wherein:
the plasma generator includes a remote plasma generating unit connected to the inlet upstream thereof and operable to form a plasma in process gas flowing from a source thereof to the processing gas inlet.
4. The apparatus of claim 1 wherein:
the plasma generator includes a plasma generating system situated in the chamber between the processing gas inlet and the column and operable to form a plasma in process gas flowing from the inlet to the wafers supported on the column.
5. The apparatus of claim 1 further comprising:
a wet strip process fluid supply connected to the processing chamber and operable to supply ozone, water vapor or a mixture containing ozone and water vapor to the processing chamber.
6. The apparatus of claim 1 wherein:
the gas flow control system is operable to flow a reactive gas plasma at a rate of from 1,000 sccm to 10,000 sccm through the chamber, and maintaining pressure in the chamber at from 100 milliTorr to 10 Torr.
7. The apparatus of claim 1 wherein:
the column includes a temperature control system operable to maintain temperature of wafers on the column in the range of from 100 degrees C. to 600 degrees C.
8. The apparatus of claim 1 further comprising:
a source of reactive gas connected to the inlet.
9. The apparatus of claim 8 wherein the source of reactive gas includes:
means for providing to the plasma gas generator either:
oxidizing chemistry, or
reducing chemistry, or
fluorine-containing chemistry, or
oxidizing fluorine-containing chemistry, or
reducing fluorine-containing chemistry.
10. The apparatus of claim 8 wherein the source of reactive gas includes:
means for providing to the plasma gas generator either:
oxidizing chemistry containing either O2, NO, N2O, or inert gas in combination with O2, NO, or N2O, or
reducing chemistry containing either H2, NH3, or inert gas in combination with H2 or NH3, or
either F2, NF3, CF4, or inert gas in combination with F2, NF3 or CF4.
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US12/117,981 US20080210273A1 (en) | 2005-11-08 | 2008-05-09 | Batch photoresist dry strip and ash system and process |
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US11/269,007 US7387968B2 (en) | 2005-11-08 | 2005-11-08 | Batch photoresist dry strip and ash system and process |
US12/117,981 US20080210273A1 (en) | 2005-11-08 | 2008-05-09 | Batch photoresist dry strip and ash system and process |
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US12/117,981 Abandoned US20080210273A1 (en) | 2005-11-08 | 2008-05-09 | Batch photoresist dry strip and ash system and process |
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Also Published As
Publication number | Publication date |
---|---|
WO2007056369A3 (en) | 2007-07-05 |
WO2007056369A2 (en) | 2007-05-18 |
TW200731399A (en) | 2007-08-16 |
US7387968B2 (en) | 2008-06-17 |
US20070105392A1 (en) | 2007-05-10 |
JP2009515366A (en) | 2009-04-09 |
TWI349965B (en) | 2011-10-01 |
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