US20080206987A1 - Process for tungsten nitride deposition by a temperature controlled lid assembly - Google Patents
Process for tungsten nitride deposition by a temperature controlled lid assembly Download PDFInfo
- Publication number
- US20080206987A1 US20080206987A1 US12/021,798 US2179808A US2008206987A1 US 20080206987 A1 US20080206987 A1 US 20080206987A1 US 2179808 A US2179808 A US 2179808A US 2008206987 A1 US2008206987 A1 US 2008206987A1
- Authority
- US
- United States
- Prior art keywords
- tungsten
- substrate
- processing chamber
- during
- deposition process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 151
- 239000010937 tungsten Substances 0.000 title claims abstract description 151
- 238000000034 method Methods 0.000 title claims abstract description 92
- 230000008569 process Effects 0.000 title claims abstract description 62
- -1 tungsten nitride Chemical class 0.000 title claims abstract description 55
- 230000008021 deposition Effects 0.000 title description 35
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 103
- 238000012545 processing Methods 0.000 claims abstract description 81
- 238000000151 deposition Methods 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000010438 heat treatment Methods 0.000 claims abstract description 50
- 238000010899 nucleation Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 35
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 31
- 230000006911 nucleation Effects 0.000 claims abstract description 31
- 238000005019 vapor deposition process Methods 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims description 89
- 239000002243 precursor Substances 0.000 claims description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 40
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 33
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 239000003638 chemical reducing agent Substances 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 10
- 229910000077 silane Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 6
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 3
- 239000008246 gaseous mixture Substances 0.000 claims 2
- 238000001816 cooling Methods 0.000 description 34
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- 239000007788 liquid Substances 0.000 description 18
- 239000012809 cooling fluid Substances 0.000 description 11
- 239000012530 fluid Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 9
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 8
- 229910021342 tungsten silicide Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- OFEAOSSMQHGXMM-UHFFFAOYSA-N 12007-10-2 Chemical compound [W].[W]=[B] OFEAOSSMQHGXMM-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- UYDPQDSKEDUNKV-UHFFFAOYSA-N phosphanylidynetungsten Chemical compound [W]#P UYDPQDSKEDUNKV-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
Definitions
- Embodiments of the invention generally relate to a temperature controlled lid assembly for a processing chamber and a method for depositing tungsten-containing materials on a substrate by vapor deposition processes.
- Modern integrated circuits contain large numbers of transistors. These transistors are generally field effect transistors that contain a source region and a drain region with a gate electrode located in between the source and drain regions.
- a typical gate structure contains a thin polysilicon electrode that lies on top of a thin layer of gate oxide such as silicon oxide.
- the gate electrode and gate oxide are formed between semi-conducting source and drain regions, that define an underlying well of p-type or n-type silicon.
- the source and drain regions are doped opposite to the well to define the gate location, a layer of insulating material such as silicon oxide, silicon nitride, or silicon oxynitride is deposited on top of the source and drain regions and an aperture or via is formed in the insulating material between the source and drain regions.
- the gate structure within the via contains a thin oxide layer, a polysilicon layer and a metal plug.
- the metal plug is typically formed by vapor depositing a metal such as tungsten on top of the polysilicon gate electrode. To complete the connection, the silicon then is caused to diffuse into the tungsten during a thermal annealing process forming a layer of relatively uniform tungsten silicide as the connection to the gate electrode. Without annealing, the silicon will ultimately diffuse into the tungsten forming a non-uniform layer of tungsten silicide.
- a gate electrode having an electrical connection made of pure tungsten would be more desirable than a tungsten silicide electrode since tungsten has a lower resistivity than tungsten silicide.
- silicon diffuses into the tungsten forming tungsten silicide. The diffusion can be prevented by depositing a layer of tungsten nitride as a diffusion barrier between the tungsten and the silicon.
- Tungsten nitride is a good conductor as well as an excellent diffusion barrier material.
- Such a barrier layer is typically formed by reducing tungsten hexafluoride (WF 6 ) with ammonia (NH 3 ) in a chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process.
- a processing chamber for depositing a material by vapor deposition which includes a lid assembly attached to a chamber body, wherein the lid assembly contains a lid plate, a showerhead, a mixing cavity, and a distribution cavity, and a resistive heating element contained within the lid plate.
- the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C., such as about 150° C.
- the mixing cavity is in fluid communication with a tungsten precursor source and a nitrogen precursor source, wherein the tungsten precursor source generally contains tungsten hexafluoride and the nitrogen precursor source generally contains ammonia.
- the lid assembly further contains a liquid channel attached to a temperature regulating system.
- the chamber body further contains a substrate support pedestal having a heater.
- a processing chamber for depositing a tungsten-containing material by vapor deposition which includes a lid assembly attached to a chamber body, wherein the lid assembly contains a lid plate, a showerhead, a mixing cavity, and a distribution cavity, a resistive heating element contained within the lid plate, a tungsten precursor source coupled to and in fluid communication with the lid assembly, and a nitrogen precursor source coupled to and in fluid communication with the lid assembly.
- the processing chamber contains a reducing agent precursor source coupled to and in fluid communication with the lid assembly.
- the reducing agent precursor source contains a reducing agent, such as silane, hydrogen, diborane, disilane, phosphine, derivatives thereof, or combinations thereof.
- a first valve is positioned between the tungsten precursor source and the lid assembly, a second valve is positioned between the nitrogen precursor source and the lid assembly, and a third valve is positioned between the reducing agent precursor source and the lid assembly.
- Each of the first valve, the second valve, and the third valve is independently controlled by a programmable logic controller.
- the programmable logic controller is configured to sequentially open and close the first and third valves while forming a tungsten nucleation layer during an atomic layer deposition process. In another example, the programmable logic controller is configured to simultaneously open and close the first and second valves while forming a tungsten nitride layer during a chemical vapor deposition process. In another example, the programmable logic controller is configured to sequentially open and close the first and second valves while forming a tungsten nitride layer during a second atomic layer deposition process. In another example, the programmable logic controller is configured to open and close the third valve during a pre-nucleation soak process or a post-nucleation soak process.
- a method for forming a tungsten-containing material on a substrate includes positioning a substrate within a processing chamber comprising a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., depositing a tungsten nitride layer on the substrate during a vapor deposition process within the processing chamber, and depositing a tungsten nucleation layer on the tungsten nitride layer during an atomic layer deposition process within the processing chamber.
- a method for forming a tungsten-containing material on a substrate includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber, depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process within the processing chamber, and depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber.
- a method for forming a tungsten-containing material on a substrate includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber, depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process within the processing chamber, and depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber.
- a method for forming a tungsten-containing material on a substrate includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber, depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process within the processing chamber, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.
- the method provides that the lid plate is heated to a temperature within a range from about 140° C. to about 160° C., preferably, from about 145° C. to about 155° C., more preferably, at about 150° C.
- the tungsten nitride layer may be deposited during a chemical vapor deposition process, wherein a tungsten precursor and a nitrogen precursor are co-flowed during the chemical vapor deposition process.
- the tungsten precursor contains tungsten hexafluoride and the nitrogen precursor contains ammonia.
- the method provides that the substrate is exposed to a reducing agent during the pre-nucleation soak process or the post-nucleation soak process.
- the reducing agent may contain silane, hydrogen, diborane, disilane, phosphine, derivatives thereof, or combinations thereof.
- Other examples provide that a bulk tungsten layer is deposited on the tungsten nucleation layer during a thermal chemical vapor deposition process.
- an angled mixer and a lid assembly that may be utilized on a processing chamber are disclosed herein.
- the lid assembly may have both heating elements and cooling channels to permit rapid heating and cooling of the chamber lid so that multiple depositions may occur within the same processing chamber at different temperatures.
- the mixer may be angled to be disposed within a central area of the lid assembly.
- the mixer may have an opening at the top to permit cleaning gas to enter the processing chamber, a second opening to permit introduction of a first deposition gas, and a third opening to permit introduction of a second deposition gas perpendicular to the flow of the first deposition gas so that the first and second deposition gases effectively mix within the mixer before being exposed to the substrate.
- a mixer contains a mixer body having a base portion, a shaft portion substantially perpendicular to the base portion, one or more first gas introduction holes having a first diameter along the shaft portion, and one or more second gas introduction holes having a second diameter less than the first diameter disposed along the shaft portion.
- a lid assembly contains one or more heating elements, one or more cooling channels, a hole disposed about the center axis of the lid assembly and through the lid assembly, a notch disposed adjacent to and coupled with the hole, and a cavity disposed adjacent to and coupled with the hole.
- a lid assembly contains a lid body and a mixer body coupled with the lid body.
- the lid body contains one or more heating elements, one or more cooling channels, and a notch disposed within an upper surface of the lid body.
- the a mixer body contains a base portion, a shaft portion substantially perpendicular to the base portion, one or more first gas introduction holes having a first diameter along the shaft portion, and one or more second gas introduction holes having a second diameter less than the first diameter disposed along the shaft portion.
- FIG. 1 depicts a schematic cross sectional view of a processing chamber having a lid assembly and mixer according to an embodiment described herein;
- FIG. 2A depicts a schematic cross sectional view of an angled mixer according to another embodiment described herein;
- FIG. 2B depicts a top view of the angled mixer of FIG. 2A ;
- FIGS. 2C and 2D depict isometric views of the angled mixer of FIG. 2A ;
- FIG. 3A depicts a top view of a secondary lid assembly according to another embodiment described herein;
- FIG. 3B depicts a bottom view of the lid assembly of FIG. 3A ;
- FIG. 3C depicts a bottom cross sectional view of the lid assembly of FIG. 3A ;
- FIG. 3D depicts a cross sectional view of the lid assembly of FIG. 3A ;
- FIGS. 4-6 depict a schematic of a processing chamber according to other embodiments described herein.
- FIGS. 7-9 depict a schematic of another processing chamber according to other embodiments described herein.
- Embodiments of the invention provide a processing chamber for depositing a material by vapor deposition.
- the processing chamber includes a lid assembly attached to a chamber body, wherein the lid assembly contains a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate.
- the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C., such as about 150° C.
- the mixing cavity is in fluid communication with a tungsten precursor source and a nitrogen precursor source, wherein the tungsten precursor source generally contains tungsten hexafluoride and the nitrogen precursor source generally contains ammonia.
- Embodiments of the apparatuses and processes as described herein are useful to deposit tungsten-containing materials while avoiding contamination of the processing chamber or substrate of various byproducts, including ammonia adducts of tungsten hexafluoride ((NH 3 ) 4 .WF 6 ), ammonium fluoride (NH 4 F), and other ammonium complexes.
- ammonia adducts of tungsten hexafluoride (NH 3 ) 4 .WF 6 )
- NH 4 F ammonium fluoride
- Embodiments of the invention provide an angled mixer and lid assembly for a processing chamber.
- the lid assembly may have both heating elements and cooling channels to permit rapid heating and cooling of the chamber lid so that multiple depositions may occur within the same processing chamber at different temperatures.
- the mixer may be angled to be disposed within a central area of the lid assembly.
- the mixer may have an opening at the top to permit a cleaning gas to enter the processing chamber, a second opening to permit introduction of a first deposition gas, and a third opening to permit introduction of a second deposition gas perpendicular to the flow of the first deposition gas so that the first and second deposition gases effectively mix within the mixer before being exposed to the substrate.
- the angled mixer and the lid assembly may be used to form tungsten-containing materials by vapor deposition processes as described herein.
- the tungsten-containing materials may contain metallic tungsten, tungsten nitride, tungsten silicide, tungsten boride, tungsten phosphide, derivatives thereof, or combinations thereof.
- a processing chamber may be used to perform chemical vapor deposition (CVD), plasma-enhanced CVD (PE-CVD), pulsed-CVD, atomic layer deposition (ALD), plasma-enhanced ALD (PE-ALD), derivatives thereof, or combinations thereof.
- CVD chemical vapor deposition
- PE-CVD plasma-enhanced CVD
- ALD atomic layer deposition
- PE-ALD plasma-enhanced ALD
- Processing chambers for CVD and ALD processes are commercially available from Applied Materials, Inc., located in Santa Clara, Calif.
- the processing chamber for depositing tungsten-containing materials may contain an in situ plasma
- FIG. 1 is a schematic cross sectional view of processing chamber 100 having lid assembly 101 and angled mixer 110 according to one embodiment of the invention.
- Processing chamber 100 contains chamber body 102 with susceptor 104 for supporting substrate 106 opposite showerhead 108 .
- Chamber body 102 may be enclosed by two lids, such as inner lid 112 and outer lid 118 .
- Outer lid 118 may encircle the outside of chamber body 102 and may contain one or more cooling channels 120 to maintain the chamber body at a predetermined temperature.
- Chamber body 102 , showerhead 108 , inner lid 112 , and outer lid 118 may independently be formed of or contain a metal, such as aluminum, stainless steel, or alloys thereof.
- Inner lid 112 may also contain one or more cooling channels 114 . Additionally, inner lid 112 may contain one or more heating elements 116 . Both the cooling channels 114 and heating elements 116 may be embedded in inner lid 112 . The presence of both heating elements 116 and cooling channels 114 in inner lid 112 permit the rapid increase in temperature and decrease in temperature that may be necessary to deposit both tungsten and tungsten nitride at different temperatures within the same processing chamber 100 as well as cleaning processing chamber 100 .
- Angled mixer 110 may be disposed within inner lid 112 for introduction of both deposition gases and cleaning gases into processing chamber 100 .
- Cleaning gases may be provided from cleaning gas panel 122 through top 124 of angled mixer 110 .
- a first deposition gas may be provided to angled mixer 110 from first gas panel 126 through opening 128 disposed on a side surface of angled mixer 110 .
- a second deposition gas may be provided to angled mixer 110 from second gas panel 130 to notch 132 disposed in inner lid 112 adjacent angled mixer 110 . Notch 132 permits the second gas to travel around the outside of angled mixer 110 and then inject into angled mixer 110 through one or more holes.
- FIG. 2A is a schematic cross sectional view of angled mixer 206 according to one embodiment of the invention.
- FIGS. 2C and 2D are isometric views of angled mixer 206 of FIG. 2A .
- Angled mixer 206 may be disposed in lid assembly 200 having lid 202 and gas inlet manifold 204 . Angled mixer 206 may extend through lid 202 and into gas inlet manifold 204 . Angled mixer 206 may be coupled with lid 202 with one or more fastening mechanisms disposed through openings 208 a and 208 b in base portion 228 of angled mixer 206 .
- One or more vacuum channels 210 a and 210 b may be coupled with openings 208 a and 208 b to permit drawing a vacuum and pulling angled mixer 206 into tight contact with lid 202 .
- Vacuum channels 210 a and 210 b may have different widths as shown by arrows “H” and “J” in FIG. 2B .
- the ratio of the widths of vacuum channels 210 a and 210 b may be within a range from about 1.6 to about 2.0, preferably, from about 1.75 to about 1.95, and more preferably, from about 1.85 to about 1.90. In one example, the ratio of the widths of vacuum channels 210 a and 210 b may be about 1.875. Openings 208 a and 208 b may be offset on angled mixer 206 such that one opening 208 a may be spaced a distance “B” from the center of angled mixer 206 and the other opening 208 b may be spaced a second, different distance “C” from the center of angled mixer 206 . In one embodiment, the ratio of the distance “C” to the distance “B” may be about 1.3. Openings 208 a and 208 b may be offset so angled mixer 206 may be coupled with lid 202 in the correct orientation.
- Angled mixer 206 also contains shaft portion 230 having inner wall 212 having a substantially constant diameter “D” and outer wall 216 that is angled relative to inner wall 212 . Additionally, outer wall 216 is angled relative to wall 218 of lid 202 and wall 220 of gas inlet manifold 204 . Outer wall 216 is angled as shown by arrows “A”. The angled outer wall 216 relative to the substantially straight walls 218 and 220 of lid 202 , and gas inlet manifold 204 respectively permit angled mixer 206 to be easily inserted into lid assembly 200 without outer wall 216 scraping walls 218 and 220 while also permitting a tight fit at a location corresponding to where shaft portion 230 meets base portion 228 of angled mixer 206 .
- a cleaning gas may be introduced to the processing chamber through opening 222 in angled mixer 206 that is coupled with a cleaning gas introduction tube 232 . Opening 222 may be disposed at the top of shaft portion 230 of angled mixer 206 such that the cleaning gas may clean the entire angled mixer 206 .
- a first deposition gas may be provided to angled mixer 206 through opening 224 in shaft portion 230 of angled mixer 206 . The first deposition gas flows downward through shaft portion 230 of angled mixer 206 as shown by the arrows “E”.
- a second deposition gas may be introduced to notch 214 formed between outer wall 216 of shaft portion 230 of angled mixer 206 and walls 218 and 220 of lid 202 and gas inlet manifold 204 .
- the second deposition gas may flow around the outside of angled mixer 206 and then inject into angled mixer 206 through holes 226 formed in notch 214 of shaft portion 230 in a direction substantially perpendicular to the flow of the first deposition gas as shown by the arrows “F”.
- eight holes 226 may be present.
- the cross-flow of the second deposition gas may permit the first and secondary gases to sufficiently mix as they collectively flow down through angled mixer 206 as shown by the arrows “G”.
- the diameter of holes 226 is less than the diameter of opening 224 .
- Opening 222 may have a diameter that is different than the diameter of opening 224 and holes 226 .
- FIG. 3A is a top view of lid assembly 300 according to one embodiment of the invention.
- FIG. 3B is a bottom view of lid assembly 300 of FIG. 3A .
- FIG. 3C is a bottom cross sectional view of lid assembly 300 of FIG. 3A .
- FIG. 3D is a cross sectional view of lid assembly 300 of FIG. 3A .
- Lid assembly 300 contains top portion 302 having a non-circular outer wall 306 and bottom portion 304 having a substantially circular outer wall 308 .
- top portion 302 and bottom portion 304 are a unitary piece.
- top portion 302 and bottom portion 304 are separate pieces coupled together.
- Hole 312 may be present through lid assembly 300 to permit insertion of a mixer.
- Hole 312 may be substantially cylindrically shaped and have a substantially uniform diameter as shown by arrows “K”. Therefore, a mixer inserted into hole 312 tightly fits therein.
- Notch 314 may be present to permit deposition gas to be provided to the mixer once inserted into lid assembly 300 .
- Sealing cavity 310 may be present to permit lid assembly 300 to be coupled with a gas inlet manifold (not shown).
- a cavity portion 316 may be present for the base portion of a mixer to be coupled to lid assembly 300 .
- Heating element 318 may be disposed within lid assembly 300 to heat the processing gas and lid assembly 300 . Heating element 318 may have multiple turns and winds through lid assembly 300 and may even turn back upon itself. In one embodiment, heating element 318 may contain aluminum. Heating elements 318 containing aluminum may be beneficial because the aluminum, as compared to conventional stainless steel heating elements, may prevent warping.
- One or more cooling channels 320 may also be present outside heating element 318 to rapidly cool lid assembly 300 .
- One or more thermocouples 322 may be coupled with the lid to measure the temperature of lid assembly 300 . Having both heating elements 318 and cooling channels 320 coupled within the same lid permits the rapid cooling and rapid heating necessary to perform both tungsten and tungsten nitride deposition with the same processing chamber. The rapid heating and cooling can permit successive deposition processes of tungsten and tungsten nitride to occur within the same chamber without sacrificing throughput.
- cooling channels 320 may be used to regulate the temperature of lid assembly 300 during the vapor deposition process for depositing a tungsten-containing material.
- lid assembly 101 may be heated or maintained at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., and more preferably, from about 145° C. to about 155° C., such as about 150° C., during the vapor deposition process of a tungsten-containing material.
- Temperature control may be useful to deposit both metallic tungsten and tungsten nitride materials in the same chamber.
- lid assembly 300 may be maintained at a temperature of about 25° C.
- heating elements 318 may be turned off and lid assembly 300 may be cooled by flowing a cooling fluid through cooling channel 320 .
- the cooling fluid may contain water, glycol based fluid, or combinations thereof.
- the chamber may be purged of the tungsten deposition gases.
- the cooling fluid may be turned off and removed from cooling channel 320 by forcing air or an inert gas through cooling channel 320 .
- the tungsten nitride deposition may occur at about 150° C.
- heating elements 318 may be turned on while the cooling channel does not have a cooling fluid circulating therethrough.
- a controller may control the heating and cooling.
- a series of valves may be used to control when the cooling fluid is supplied to lid assembly 300 .
- heating element 318 may not be on.
- cooling fluid may not be supplied to lid assembly 300 .
- the air and/or inert gas may not be supplied to cooling channel 320 .
- cooling fluid may not be supplied to cooling channel 320 .
- thermocouples 322 If the temperature of lid assembly 300 as measured by thermocouples 322 is greater than about 85° C., cooling fluid may not be supplied to the cooling channels 320 . If the temperature of lid assembly 300 is greater than about 180° C., then heating elements 318 may be turned off. If the lid assembly temperature is greater than about 65° C., the chamber may not be vented.
- the primary lid discussed above in reference to FIG. 1 may be maintained at a temperature of about 25° C. during the tungsten nitride deposition. In one embodiment, the primary lid may be maintained at a temperature of about 65° C.
- the deposition of the tungsten nitride may occur at about 2 kW in power and about 10 amps. In another embodiment, the deposition of tungsten nitride may occur at about 3 kW in power and about 15 amps.
- An angled mixer disposed in a secondary lid assembly having both heating elements and cooling channels may permit deposition of tungsten and tungsten nitride within the same chamber.
- FIGS. 4-6 illustrate processing chamber 450 that may be used to form tungsten-containing materials by vapor deposition process as described herein.
- the tungsten-containing materials may contain metallic tungsten, tungsten nitride, tungsten silicide, tungsten boride, tungsten phosphide, derivatives thereof, or combinations thereof.
- Processing chamber 450 may be used to perform CVD, PE-CVD, pulsed-CVD, ALD, PE-ALD, derivatives thereof, or combinations thereof.
- Water channels, such as convolute liquid channel 562 may be used to regulate the temperature of lid assembly 400 during the vapor deposition process for depositing a tungsten-containing material.
- lid assembly 400 may be heated or maintained at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., and more preferably, from about 145° C. to about 155° C., such as about 150° C., during the vapor deposition process of a tungsten-containing material.
- showerhead 556 has a relatively short upwardly extending rim 558 screwed to gas box plate 560 .
- Both showerhead 556 and gas box plate 560 may be formed from or contain a metal, such as aluminum, stainless steel, or alloys thereof.
- Convolute liquid channel 562 illustrated in FIG. 6 , is formed in the top of gas box plate 560 and covered and sealed by water cooling cover plate 434 . Water is generally flown through convolute liquid channel 562 . However, alcohols, glycol ethers, and other organic solvents may be used solely or mixed with water to transfer heat away from or to lid assembly 400 . Water ports 448 and 449 through water cooling cover plate 434 are illustrated in FIGS.
- Convolute liquid channel 562 is formed in a serpentine though generally circumferential path having bends 568 (e.g., three sharp U-turns or U-shaped bends) as the path progresses from the inside to the outside until the path returns to the inside in radial channel 570 .
- Bends 568 e.g., three sharp U-turns or U-shaped bends
- Liquid channel 562 is narrow enough and bends 568 are sharp enough to ensure that the flow of water becomes turbulent, thus aiding the flow of heat from the flange of gas box plate 560 to the water in channel 562 .
- a liquid temperature regulating system may be attached to water ports 448 and 449 and convolute liquid channel 562 and used to transfer heat away from or to lid assembly 400 .
- lid assembly 400 is configured to be heated or maintained at a temperature of about 150° C. and is in fluid communication with a source of tungsten precursor (e.g., WF 6 ) and a source of a nitrogen precursor (e.g., NH 3 ).
- FIGS. 4 and 5 depict upwardly extending rim 558 of showerhead 556 attached to bottom rim 572 of gas box plate 560 . Both rims 558 and 572 are maximally sized between encompassing lid isolator 574 and encompassed lower cavity 430 of showerhead 556 .
- the screw fastening between showerhead 556 and gas box plate 560 ensures good thermal contact over the maximally sized contact area.
- the thermal flow area extends from the outside at lid isolator 574 (except for a gap between lid isolator 574 and either showerhead 556 or gas box plate 560 ) to the inside at lower cavity 430 .
- the structure of water cooling channels 562 provides efficient thermal transfer between the water and gas box plate 560 , and the mechanical interface between the flange of gas box plate 560 and showerhead 556 ensures efficient thermal transfer between them. Accordingly, the cooling of showerhead 556 is greatly enhanced.
- Processing chamber 450 further contains heater pedestal 552 connected to pedestal stem 554 that may be vertical moved within processing chamber 450 .
- the heater portion of heater pedestal 552 may be formed of a ceramic.
- pedestal 552 holds the substrate in close opposition to lower surface 582 of showerhead 556 , processing region 426 being defined between pedestal 552 and lower surface 582 of showerhead 556 .
- showerhead 556 has a large number of apertures or holes 580 communicating between lower cavity 430 and processing region 426 to allow the passage of processing gas.
- the processing gas is supplied through gas port 432 formed at the center of water-cooled gas box plate 560 made of aluminum.
- gas box plate 560 The upper side of gas box plate 560 is covered by water cooling cover plate 434 surrounding the upper portion of gas box plate 560 that includes gas port 432 .
- Gas port 432 supplies the processing gases to upper cavity 438 separated from lower cavity 430 by blocker plate 440 , also having a large number of holes 580 therethrough.
- One purpose of cavities 430 and 438 , showerhead 556 , and blocker plate 440 is to evenly distribute the processing gas over the upper face of the substrate.
- the substrate may be supported on pedestal 552 , which is illustrated in a raised, deposition position. In a lowered, loading position, lifting ring 416 attached to lift tube 417 lifts four lift pins 418 fit to slide into pedestal 552 so that lift pins 418 can receive the substrate loaded into the chamber through loadlock port 419 in chamber body 420 .
- pedestal 552 may contain an optional confinement ring 610 , such as during plasma-enhanced vapor deposition processes.
- Lid isolator 574 is interposed between showerhead 556 and lid rim 466 , which can be lifted off chamber body 420 to open processing chamber 450 for maintenance access.
- the vacuum within processing chamber 450 is maintained by vacuum pump 470 connected to pump plenum 472 within processing chamber 450 , which connects to annular pumping channel 474 .
- annular chamber liner 680 made of quartz not only defines a side of pumping channel 474 but also partially defines a further choke aperture 682 between processing region 426 and pumping channel 474 .
- Annular chamber liner 680 also supports confinement ring 610 in the lowered position of pedestal 552 .
- Chamber liner 680 also surrounds a circumference at the back of pedestal 552 .
- Chamber liner 680 rests on narrow ledge 683 in chamber body 420 , but there is little other contact, so as to minimize thermal transport.
- Below chamber liner 680 is located a Z-shaped lower chamber shield 684 , preferably made of opaque quartz.
- Lower chamber shield 684 rests on the bottom of chamber body 420 on annular boss 686 formed on the bottom of lower chamber shield 684 .
- the quartz prevents radiative coupling between the bottom of pedestal 552 and chamber body 420 , and annular boss 686 minimizes conductive heat transfer to chamber body 420 .
- lower chamber shield 684 includes an inwardly extending bottom lip joined to a conically shaped upper portion conforming to the inner wall of chamber body 420 . While this alternative design is operationally satisfactory, the sloping shape is much more expensive to fabricate in quartz.
- FIGS. 7-9 illustrate processing chamber 750 containing convolute liquid channel 562 and resistive heating element 770 that may be used to form tungsten-containing materials by vapor deposition process as described herein.
- Resistive heating element 770 may be a wire and may be formed of or contain a metal such as copper, aluminum, steel, stainless steel, nickel, alloys thereof, or combinations thereof.
- Resistive heating element 770 may be convolute about gas box plate 760 or may take on a variety of shapes.
- resistive heating element 770 contains aluminum and is configured to create a controllable temperature gradient across lower surface 761 of gas box plate 760 .
- resistive heating element 770 is configured to create a consistent temperature across lower surface 761 of gas box plate 760 .
- processing chamber 750 is connected to and in fluid communication with sources 720 , 722 , 724 , and 726 .
- source 720 is a carrier gas source and contains a carrier gas
- source 722 is a tungsten gas source and contains a tungsten precursor
- source 724 is a nitrogen source and contains a nitrogen precursor
- source 726 is a reducing agent gas source and contains a reducing agent.
- Valve 730 may be positioned between source 720 and gas port 432
- valve 732 may be positioned between source 722 and gas port 432
- valve 734 may be positioned between source 724 and gas port 432
- valve 736 may be positioned between source 726 and gas port 432 .
- Programmable logic controller (PLC) 738 may be used to control the opening and closing of valves 730 , 732 , 734 , and 736 during a CVD process, a pulsed-CVD process, or an ALD process.
- Valve 730 may be left turned on to provide a steady stream or flow of a carrier gas from source 720 .
- source 720 may contain a carrier gas such as nitrogen, argon, hydrogen, forming gas, or mixtures thereof.
- Source 722 may have a tungsten precursor, such as tungsten hexafluoride and source 724 may have a nitrogen precursor such as ammonia.
- a reducing agent may be contained within source 726 , which is coupled to and in fluid communication with lid assembly 700 .
- the reducing agent may be silane, hydrogen, diborane, disilane, phosphine, derivatives thereof, or combinations thereof.
- Valve 732 may be positioned between source 722 containing the tungsten precursor and lid assembly 700 , valve 734 positioned between source 724 containing the nitrogen precursor and lid assembly 700 , and valve 736 positioned between source 726 and the reducing agent and lid assembly 700 .
- Each of valves 720 , 722 , 724 , and 726 is independently controlled by PLC 738 .
- PLC 738 is configured to sequentially open and close valves 722 and 726 while forming a tungsten nucleation layer during an ALD process.
- PLC 738 is configured to simultaneously open and close valves 722 and 724 while forming a tungsten nitride layer during a CVD process.
- PLC 738 is configured to sequentially open and close valves 722 and 744 while forming a tungsten nitride layer during a second ALD process. In another example, PLC 738 is configured to open and close valve 736 during a pre-nucleation soak process or a post-nucleation soak process while the substrate is exposed to a reducing agent delivered from source 726 .
- the tungsten-containing materials may contain metallic tungsten, tungsten nitride, tungsten silicide, tungsten boride, tungsten phosphide, derivatives thereof, or combinations thereof.
- Processing chamber 750 may be used to perform CVD, PE-CVD, pulsed-CVD, ALD, PE-ALD, derivatives thereof, or combinations thereof.
- Controller 780 and resistive heating element 770 may be used to regulate the temperature of lid assembly 700 during the vapor deposition process for depositing a tungsten-containing material.
- lid assembly 700 or gas box plate 760 may be heated or maintained at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C.
- Convolute liquid channel 562 may be used to heat or cool lid assembly 700 .
- showerhead 556 has a relatively short upwardly extending rim 558 screwed to gas box plate 760 .
- Both showerhead 556 and gas box plate 760 may be formed of a metal, such as aluminum, stainless steel, or alloys thereof.
- Convolute liquid channel 562 illustrated in FIG. 9 , is formed in the top of gas box plate 760 and covered and sealed by water cooling cover plate 434 . Water is generally flown through convolute liquid channel 562 . However, alcohols, glycol ethers, and other organic solvents may be used solely or mixed with water to transfer heat away from or to lid assembly 700 .
- Water ports 448 and 449 through water cooling cover plate 434 are illustrated in FIGS. 8-9 .
- Water ports 448 and 449 connect ends 564 and 566 of liquid channel 562 near to the center of gas box plate 760 .
- Convolute liquid channel 562 is formed in a serpentine though generally circumferential path having bends 568 (e.g., three sharp U-turns or U-shaped bends) as the path progresses from the inside to the outside until the path returns to the inside in radial channel 570 .
- Bends 568 e.g., three sharp U-turns or U-shaped bends
- Liquid channel 562 is narrow enough and bends 568 are sharp enough to ensure that the flow of water or other fluids becomes turbulent, thus aiding the flow of heat from the flange of gas box plate 760 to the water in channel 562 .
- a liquid temperature regulating system may be attached to water ports 448 and 449 and convolute liquid channel 562 and used to transfer heat away from or to lid assembly 700 .
- lid assembly 700 is configured to be heated or maintained at a temperature of about 150° C. and is in fluid communication with a source of tungsten precursor (e.g., WF 6 ) and a source of a nitrogen precursor (e.g., NH 3 ).
- a processing chamber for depositing tungsten-containing materials contains a lid plate containing an embedded heating element disposed therein.
- a processing chamber for depositing tungsten-containing materials contains a gas box plate containing an embedded heating element disposed therein.
- a processing chamber for depositing tungsten-containing materials contains an insulating jacket heater containing heating element disposed thereon. Heating elements may be configured to generate more heat near a particular region of lid plate, such as an inner region or an outer region. A controller may be used to regulate the temperature of lid plate by adjusting power levels to the heating element.
- the processing chamber for depositing tungsten-containing materials may contain an in situ plasma source or a remote plasma source.
- a tungsten nitride layer and a tungsten nucleation layer are deposited during a vapor deposition process.
- the lid plate may be heated to a temperature within a range from about 140° C. to about 160° C., preferably, about 150° C.
- a substrate may be exposed to a pre-soak gas containing silane during a pre-soak process.
- the pre-soak process may last for a time period within a range about 10 seconds to about 30 seconds, preferably about 20 seconds, while the processing chamber may have an internal pressure within a range from about 50 Torr to about 150 Torr, preferably, about 90 Torr.
- a tungsten nitride layer is deposited at a process temperature within a range from about 375° C. to about 425° C., preferably, about 400° C.
- the pre-soak process and the tungsten nitride deposition may be repeated about 25 times to form a tungsten nitride material.
- a tungsten nucleation layer may be deposited by an ALD process by repeating about 15 cycles of exposing the substrate to the tungsten precursor and a reducing agent (e.g., SiH 4 or B 2 H 6 ).
- the tungsten nitride is deposited by a CVD process wherein the tungsten precursor (e.g., WF 6 ) is co-flowed with the nitrogen precursor (e.g., NH 3 ).
- the lid assembly contains a lid plate heated to a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., and more preferably, from about 145° C. to about 155° C., such as about 150° C.
- the processing chamber may have an internal pressure within a range from about 2 Torr to about 20 Torr, such as about 6 Torr.
- the tungsten nitride is deposited by an ALD process wherein the tungsten precursor (e.g., WF 6 ) is sequentially pulsed with the nitrogen precursor (e.g., NH 3 ).
- the substrate may be exposed to multiple ALD cycles, wherein each ALD cycle exposes the substrate to a pre-soak gas containing a reducing agent (e.g., SiH 4 or B 2 H 6 ) for about 0.5 seconds, purge gas for about 2 seconds, tungsten precursor for about 1.5 seconds, purge gas for about 2 seconds, nitrogen precursor for about 2.5 seconds, and purge gas for about 2 seconds.
- a reducing agent e.g., SiH 4 or B 2 H 6
Abstract
Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.
Description
- This application claims benefit of U.S. Ser. No. 60/887,142 (APPM/011741L), filed Jan. 29, 2007, and U.S. Ser. No. 60/944,085 (APPM/011741L02), filed Jun. 14, 2007, which are herein incorporated by reference in their entirety.
- 1. Field of the Invention
- Embodiments of the invention generally relate to a temperature controlled lid assembly for a processing chamber and a method for depositing tungsten-containing materials on a substrate by vapor deposition processes.
- 2. Description of the Related Art
- Modern integrated circuits contain large numbers of transistors. These transistors are generally field effect transistors that contain a source region and a drain region with a gate electrode located in between the source and drain regions.
- A typical gate structure contains a thin polysilicon electrode that lies on top of a thin layer of gate oxide such as silicon oxide. The gate electrode and gate oxide are formed between semi-conducting source and drain regions, that define an underlying well of p-type or n-type silicon. The source and drain regions are doped opposite to the well to define the gate location, a layer of insulating material such as silicon oxide, silicon nitride, or silicon oxynitride is deposited on top of the source and drain regions and an aperture or via is formed in the insulating material between the source and drain regions. The gate structure within the via contains a thin oxide layer, a polysilicon layer and a metal plug. The metal plug is typically formed by vapor depositing a metal such as tungsten on top of the polysilicon gate electrode. To complete the connection, the silicon then is caused to diffuse into the tungsten during a thermal annealing process forming a layer of relatively uniform tungsten silicide as the connection to the gate electrode. Without annealing, the silicon will ultimately diffuse into the tungsten forming a non-uniform layer of tungsten silicide.
- A gate electrode having an electrical connection made of pure tungsten would be more desirable than a tungsten silicide electrode since tungsten has a lower resistivity than tungsten silicide. Unfortunately, silicon diffuses into the tungsten forming tungsten silicide. The diffusion can be prevented by depositing a layer of tungsten nitride as a diffusion barrier between the tungsten and the silicon. Tungsten nitride is a good conductor as well as an excellent diffusion barrier material. Such a barrier layer is typically formed by reducing tungsten hexafluoride (WF6) with ammonia (NH3) in a chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process.
- Unfortunately, the above described process results in the formation of contaminant particles in the form of solid byproducts. These byproducts include ammonia adducts of tungsten hexafluoride ((NH3)4.WF6), ammonium fluoride (NH4F), and other ammonium complexes. Many of these particles become attached to the interior of the deposition chamber. During temperature fluctuations within the chamber, the deposits flake off the walls and contaminate the wafer. Further, the tungsten nitride that is deposited using the above described process has a polycrystalline structure in which there are many grain boundaries. As a result, the diffusion barrier properties of the tungsten nitride are compromised. In addition, tungsten nitride films deposited by the traditional method tend not to adhere very well to the substrate upon which they are deposited.
- Therefore, there is a need for an apparatus and a process for depositing tungsten-containing materials, wherein a tungsten precursor may be flowed with or exposed to another reagent without contaminating the processing chamber or the substrate surface.
- In one embodiment, a processing chamber for depositing a material by vapor deposition is provided which includes a lid assembly attached to a chamber body, wherein the lid assembly contains a lid plate, a showerhead, a mixing cavity, and a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C., such as about 150° C. The mixing cavity is in fluid communication with a tungsten precursor source and a nitrogen precursor source, wherein the tungsten precursor source generally contains tungsten hexafluoride and the nitrogen precursor source generally contains ammonia. In some embodiments, the lid assembly further contains a liquid channel attached to a temperature regulating system. Also, the chamber body further contains a substrate support pedestal having a heater.
- In another embodiment, a processing chamber for depositing a tungsten-containing material by vapor deposition is provided which includes a lid assembly attached to a chamber body, wherein the lid assembly contains a lid plate, a showerhead, a mixing cavity, and a distribution cavity, a resistive heating element contained within the lid plate, a tungsten precursor source coupled to and in fluid communication with the lid assembly, and a nitrogen precursor source coupled to and in fluid communication with the lid assembly.
- In other embodiments, the processing chamber contains a reducing agent precursor source coupled to and in fluid communication with the lid assembly. The reducing agent precursor source contains a reducing agent, such as silane, hydrogen, diborane, disilane, phosphine, derivatives thereof, or combinations thereof. In one embodiment, a first valve is positioned between the tungsten precursor source and the lid assembly, a second valve is positioned between the nitrogen precursor source and the lid assembly, and a third valve is positioned between the reducing agent precursor source and the lid assembly. Each of the first valve, the second valve, and the third valve is independently controlled by a programmable logic controller. In one example, the programmable logic controller is configured to sequentially open and close the first and third valves while forming a tungsten nucleation layer during an atomic layer deposition process. In another example, the programmable logic controller is configured to simultaneously open and close the first and second valves while forming a tungsten nitride layer during a chemical vapor deposition process. In another example, the programmable logic controller is configured to sequentially open and close the first and second valves while forming a tungsten nitride layer during a second atomic layer deposition process. In another example, the programmable logic controller is configured to open and close the third valve during a pre-nucleation soak process or a post-nucleation soak process.
- In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a processing chamber comprising a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., depositing a tungsten nitride layer on the substrate during a vapor deposition process within the processing chamber, and depositing a tungsten nucleation layer on the tungsten nitride layer during an atomic layer deposition process within the processing chamber.
- In another embodiments, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber, depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process within the processing chamber, and depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber.
- In another embodiments, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber, depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process within the processing chamber, and depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber.
- In another embodiments, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber, depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process within the processing chamber, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.
- In other embodiments, the method provides that the lid plate is heated to a temperature within a range from about 140° C. to about 160° C., preferably, from about 145° C. to about 155° C., more preferably, at about 150° C. The tungsten nitride layer may be deposited during a chemical vapor deposition process, wherein a tungsten precursor and a nitrogen precursor are co-flowed during the chemical vapor deposition process. In one embodiment, the tungsten precursor contains tungsten hexafluoride and the nitrogen precursor contains ammonia.
- In other embodiments, the method provides that the substrate is exposed to a reducing agent during the pre-nucleation soak process or the post-nucleation soak process. The reducing agent may contain silane, hydrogen, diborane, disilane, phosphine, derivatives thereof, or combinations thereof. Other examples provide that a bulk tungsten layer is deposited on the tungsten nucleation layer during a thermal chemical vapor deposition process.
- In other embodiments, an angled mixer and a lid assembly that may be utilized on a processing chamber are disclosed herein. The lid assembly may have both heating elements and cooling channels to permit rapid heating and cooling of the chamber lid so that multiple depositions may occur within the same processing chamber at different temperatures. The mixer may be angled to be disposed within a central area of the lid assembly. The mixer may have an opening at the top to permit cleaning gas to enter the processing chamber, a second opening to permit introduction of a first deposition gas, and a third opening to permit introduction of a second deposition gas perpendicular to the flow of the first deposition gas so that the first and second deposition gases effectively mix within the mixer before being exposed to the substrate.
- In one embodiment, a mixer contains a mixer body having a base portion, a shaft portion substantially perpendicular to the base portion, one or more first gas introduction holes having a first diameter along the shaft portion, and one or more second gas introduction holes having a second diameter less than the first diameter disposed along the shaft portion.
- In another embodiment, a lid assembly contains one or more heating elements, one or more cooling channels, a hole disposed about the center axis of the lid assembly and through the lid assembly, a notch disposed adjacent to and coupled with the hole, and a cavity disposed adjacent to and coupled with the hole.
- In another embodiment, a lid assembly contains a lid body and a mixer body coupled with the lid body. The lid body contains one or more heating elements, one or more cooling channels, and a notch disposed within an upper surface of the lid body. The a mixer body contains a base portion, a shaft portion substantially perpendicular to the base portion, one or more first gas introduction holes having a first diameter along the shaft portion, and one or more second gas introduction holes having a second diameter less than the first diameter disposed along the shaft portion.
- So that the manner in which the above recited features of the invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1 depicts a schematic cross sectional view of a processing chamber having a lid assembly and mixer according to an embodiment described herein; -
FIG. 2A depicts a schematic cross sectional view of an angled mixer according to another embodiment described herein; -
FIG. 2B depicts a top view of the angled mixer ofFIG. 2A ; -
FIGS. 2C and 2D depict isometric views of the angled mixer ofFIG. 2A ; -
FIG. 3A depicts a top view of a secondary lid assembly according to another embodiment described herein; -
FIG. 3B depicts a bottom view of the lid assembly ofFIG. 3A ; -
FIG. 3C depicts a bottom cross sectional view of the lid assembly ofFIG. 3A ; -
FIG. 3D depicts a cross sectional view of the lid assembly ofFIG. 3A ; -
FIGS. 4-6 depict a schematic of a processing chamber according to other embodiments described herein; and -
FIGS. 7-9 depict a schematic of another processing chamber according to other embodiments described herein. - To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.
- Embodiments of the invention provide a processing chamber for depositing a material by vapor deposition. In one embodiment, the processing chamber includes a lid assembly attached to a chamber body, wherein the lid assembly contains a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C., such as about 150° C. The mixing cavity is in fluid communication with a tungsten precursor source and a nitrogen precursor source, wherein the tungsten precursor source generally contains tungsten hexafluoride and the nitrogen precursor source generally contains ammonia.
- Embodiments of the apparatuses and processes as described herein are useful to deposit tungsten-containing materials while avoiding contamination of the processing chamber or substrate of various byproducts, including ammonia adducts of tungsten hexafluoride ((NH3)4.WF6), ammonium fluoride (NH4F), and other ammonium complexes.
- Embodiments of the invention provide an angled mixer and lid assembly for a processing chamber. The lid assembly may have both heating elements and cooling channels to permit rapid heating and cooling of the chamber lid so that multiple depositions may occur within the same processing chamber at different temperatures. The mixer may be angled to be disposed within a central area of the lid assembly. The mixer may have an opening at the top to permit a cleaning gas to enter the processing chamber, a second opening to permit introduction of a first deposition gas, and a third opening to permit introduction of a second deposition gas perpendicular to the flow of the first deposition gas so that the first and second deposition gases effectively mix within the mixer before being exposed to the substrate.
- As described below, the angled mixer and the lid assembly may be used to form tungsten-containing materials by vapor deposition processes as described herein. The tungsten-containing materials may contain metallic tungsten, tungsten nitride, tungsten silicide, tungsten boride, tungsten phosphide, derivatives thereof, or combinations thereof. A processing chamber may be used to perform chemical vapor deposition (CVD), plasma-enhanced CVD (PE-CVD), pulsed-CVD, atomic layer deposition (ALD), plasma-enhanced ALD (PE-ALD), derivatives thereof, or combinations thereof. Processing chambers for CVD and ALD processes are commercially available from Applied Materials, Inc., located in Santa Clara, Calif. In some embodiments, the processing chamber for depositing tungsten-containing materials may contain an in situ plasma source or a remote plasma source.
-
FIG. 1 is a schematic cross sectional view ofprocessing chamber 100 havinglid assembly 101 andangled mixer 110 according to one embodiment of the invention.Processing chamber 100 containschamber body 102 withsusceptor 104 for supportingsubstrate 106opposite showerhead 108.Chamber body 102 may be enclosed by two lids, such asinner lid 112 andouter lid 118.Outer lid 118 may encircle the outside ofchamber body 102 and may contain one ormore cooling channels 120 to maintain the chamber body at a predetermined temperature.Chamber body 102,showerhead 108,inner lid 112, andouter lid 118 may independently be formed of or contain a metal, such as aluminum, stainless steel, or alloys thereof. -
Inner lid 112 may also contain one ormore cooling channels 114. Additionally,inner lid 112 may contain one ormore heating elements 116. Both the coolingchannels 114 andheating elements 116 may be embedded ininner lid 112. The presence of bothheating elements 116 and coolingchannels 114 ininner lid 112 permit the rapid increase in temperature and decrease in temperature that may be necessary to deposit both tungsten and tungsten nitride at different temperatures within thesame processing chamber 100 as well as cleaningprocessing chamber 100. -
Angled mixer 110 may be disposed withininner lid 112 for introduction of both deposition gases and cleaning gases intoprocessing chamber 100. Cleaning gases may be provided from cleaninggas panel 122 throughtop 124 ofangled mixer 110. A first deposition gas may be provided toangled mixer 110 fromfirst gas panel 126 throughopening 128 disposed on a side surface ofangled mixer 110. A second deposition gas may be provided toangled mixer 110 fromsecond gas panel 130 to notch 132 disposed ininner lid 112 adjacentangled mixer 110.Notch 132 permits the second gas to travel around the outside ofangled mixer 110 and then inject intoangled mixer 110 through one or more holes. -
FIG. 2A is a schematic cross sectional view ofangled mixer 206 according to one embodiment of the invention.FIGS. 2C and 2D are isometric views ofangled mixer 206 ofFIG. 2A .Angled mixer 206 may be disposed inlid assembly 200 havinglid 202 andgas inlet manifold 204.Angled mixer 206 may extend throughlid 202 and intogas inlet manifold 204.Angled mixer 206 may be coupled withlid 202 with one or more fastening mechanisms disposed throughopenings base portion 228 ofangled mixer 206. One ormore vacuum channels openings angled mixer 206 into tight contact withlid 202.Vacuum channels FIG. 2B . - In one embodiment, the ratio of the widths of
vacuum channels vacuum channels Openings angled mixer 206 such that oneopening 208 a may be spaced a distance “B” from the center ofangled mixer 206 and theother opening 208 b may be spaced a second, different distance “C” from the center ofangled mixer 206. In one embodiment, the ratio of the distance “C” to the distance “B” may be about 1.3.Openings angled mixer 206 may be coupled withlid 202 in the correct orientation. -
Angled mixer 206 also containsshaft portion 230 havinginner wall 212 having a substantially constant diameter “D” andouter wall 216 that is angled relative toinner wall 212. Additionally,outer wall 216 is angled relative to wall 218 oflid 202 andwall 220 ofgas inlet manifold 204.Outer wall 216 is angled as shown by arrows “A”. The angledouter wall 216 relative to the substantiallystraight walls lid 202, andgas inlet manifold 204 respectively permitangled mixer 206 to be easily inserted intolid assembly 200 withoutouter wall 216scraping walls shaft portion 230 meetsbase portion 228 ofangled mixer 206. - A cleaning gas may be introduced to the processing chamber through
opening 222 inangled mixer 206 that is coupled with a cleaninggas introduction tube 232. Opening 222 may be disposed at the top ofshaft portion 230 ofangled mixer 206 such that the cleaning gas may clean the entireangled mixer 206. A first deposition gas may be provided toangled mixer 206 throughopening 224 inshaft portion 230 ofangled mixer 206. The first deposition gas flows downward throughshaft portion 230 ofangled mixer 206 as shown by the arrows “E”. A second deposition gas may be introduced to notch 214 formed betweenouter wall 216 ofshaft portion 230 ofangled mixer 206 andwalls lid 202 andgas inlet manifold 204. The second deposition gas may flow around the outside ofangled mixer 206 and then inject intoangled mixer 206 throughholes 226 formed innotch 214 ofshaft portion 230 in a direction substantially perpendicular to the flow of the first deposition gas as shown by the arrows “F”. In one embodiment, eightholes 226 may be present. The cross-flow of the second deposition gas may permit the first and secondary gases to sufficiently mix as they collectively flow down throughangled mixer 206 as shown by the arrows “G”. In one embodiment, the diameter ofholes 226 is less than the diameter ofopening 224. Opening 222 may have a diameter that is different than the diameter ofopening 224 and holes 226. -
FIG. 3A is a top view oflid assembly 300 according to one embodiment of the invention.FIG. 3B is a bottom view oflid assembly 300 ofFIG. 3A .FIG. 3C is a bottom cross sectional view oflid assembly 300 ofFIG. 3A .FIG. 3D is a cross sectional view oflid assembly 300 ofFIG. 3A .Lid assembly 300 containstop portion 302 having a non-circularouter wall 306 andbottom portion 304 having a substantially circularouter wall 308. In one embodiment,top portion 302 andbottom portion 304 are a unitary piece. In another embodiment,top portion 302 andbottom portion 304 are separate pieces coupled together.Hole 312 may be present throughlid assembly 300 to permit insertion of a mixer.Hole 312 may be substantially cylindrically shaped and have a substantially uniform diameter as shown by arrows “K”. Therefore, a mixer inserted intohole 312 tightly fits therein. -
Notch 314 may be present to permit deposition gas to be provided to the mixer once inserted intolid assembly 300.Sealing cavity 310 may be present to permitlid assembly 300 to be coupled with a gas inlet manifold (not shown). Acavity portion 316 may be present for the base portion of a mixer to be coupled tolid assembly 300. -
Heating element 318 may be disposed withinlid assembly 300 to heat the processing gas andlid assembly 300.Heating element 318 may have multiple turns and winds throughlid assembly 300 and may even turn back upon itself. In one embodiment,heating element 318 may contain aluminum.Heating elements 318 containing aluminum may be beneficial because the aluminum, as compared to conventional stainless steel heating elements, may prevent warping. One ormore cooling channels 320 may also be presentoutside heating element 318 to rapidlycool lid assembly 300. One ormore thermocouples 322 may be coupled with the lid to measure the temperature oflid assembly 300. Having bothheating elements 318 and coolingchannels 320 coupled within the same lid permits the rapid cooling and rapid heating necessary to perform both tungsten and tungsten nitride deposition with the same processing chamber. The rapid heating and cooling can permit successive deposition processes of tungsten and tungsten nitride to occur within the same chamber without sacrificing throughput. - In one embodiment, cooling
channels 320 may be used to regulate the temperature oflid assembly 300 during the vapor deposition process for depositing a tungsten-containing material. In one embodiment,lid assembly 101 may be heated or maintained at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., and more preferably, from about 145° C. to about 155° C., such as about 150° C., during the vapor deposition process of a tungsten-containing material. - Temperature control may be useful to deposit both metallic tungsten and tungsten nitride materials in the same chamber. For example, to deposit metallic tungsten,
lid assembly 300 may be maintained at a temperature of about 25° C. Thus, during tungsten deposition,heating elements 318 may be turned off andlid assembly 300 may be cooled by flowing a cooling fluid throughcooling channel 320. The cooling fluid may contain water, glycol based fluid, or combinations thereof. Following the tungsten deposition, the chamber may be purged of the tungsten deposition gases. During the purging, the cooling fluid may be turned off and removed from coolingchannel 320 by forcing air or an inert gas through coolingchannel 320. The tungsten nitride deposition may occur at about 150° C. During the tungsten nitride deposition,heating elements 318 may be turned on while the cooling channel does not have a cooling fluid circulating therethrough. - A controller (not shown) may control the heating and cooling. A series of valves may be used to control when the cooling fluid is supplied to
lid assembly 300. When the cooling fluid is supplied tolid assembly 300,heating element 318 may not be on. Similarly, when the cooling fluid is purged from coolingchannel 320,heating element 318 may not be on. When the tungsten nitride is deposited, cooling fluid may not be supplied tolid assembly 300. When the cooling fluid is supplied to coolingchannel 320, the air and/or inert gas may not be supplied to coolingchannel 320. When the air and/or inert gas is supplied to coolingchannel 320, cooling fluid may not be supplied to coolingchannel 320. If the temperature oflid assembly 300 as measured bythermocouples 322 is greater than about 85° C., cooling fluid may not be supplied to the coolingchannels 320. If the temperature oflid assembly 300 is greater than about 180° C., thenheating elements 318 may be turned off. If the lid assembly temperature is greater than about 65° C., the chamber may not be vented. - In one embodiment, the primary lid discussed above in reference to
FIG. 1 may be maintained at a temperature of about 25° C. during the tungsten nitride deposition. In one embodiment, the primary lid may be maintained at a temperature of about 65° C. The deposition of the tungsten nitride may occur at about 2 kW in power and about 10 amps. In another embodiment, the deposition of tungsten nitride may occur at about 3 kW in power and about 15 amps. An angled mixer disposed in a secondary lid assembly having both heating elements and cooling channels may permit deposition of tungsten and tungsten nitride within the same chamber. - In another embodiment,
FIGS. 4-6 illustrateprocessing chamber 450 that may be used to form tungsten-containing materials by vapor deposition process as described herein. The tungsten-containing materials may contain metallic tungsten, tungsten nitride, tungsten silicide, tungsten boride, tungsten phosphide, derivatives thereof, or combinations thereof.Processing chamber 450 may be used to perform CVD, PE-CVD, pulsed-CVD, ALD, PE-ALD, derivatives thereof, or combinations thereof. Water channels, such as convoluteliquid channel 562, may be used to regulate the temperature oflid assembly 400 during the vapor deposition process for depositing a tungsten-containing material. In one embodiment,lid assembly 400 may be heated or maintained at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., and more preferably, from about 145° C. to about 155° C., such as about 150° C., during the vapor deposition process of a tungsten-containing material. -
Showerhead 556 has a relatively short upwardly extendingrim 558 screwed togas box plate 560. Bothshowerhead 556 andgas box plate 560 may be formed from or contain a metal, such as aluminum, stainless steel, or alloys thereof. Convoluteliquid channel 562, illustrated inFIG. 6 , is formed in the top ofgas box plate 560 and covered and sealed by water coolingcover plate 434. Water is generally flown through convoluteliquid channel 562. However, alcohols, glycol ethers, and other organic solvents may be used solely or mixed with water to transfer heat away from or tolid assembly 400.Water ports cover plate 434 are illustrated inFIGS. 4-5 ,water ports liquid channel 562 near to the center ofgas box plate 560. Convoluteliquid channel 562 is formed in a serpentine though generally circumferential path having bends 568 (e.g., three sharp U-turns or U-shaped bends) as the path progresses from the inside to the outside until the path returns to the inside inradial channel 570.Liquid channel 562 is narrow enough and bends 568 are sharp enough to ensure that the flow of water becomes turbulent, thus aiding the flow of heat from the flange ofgas box plate 560 to the water inchannel 562. A liquid temperature regulating system (not shown) may be attached towater ports liquid channel 562 and used to transfer heat away from or tolid assembly 400. In one example,lid assembly 400 is configured to be heated or maintained at a temperature of about 150° C. and is in fluid communication with a source of tungsten precursor (e.g., WF6) and a source of a nitrogen precursor (e.g., NH3). -
FIGS. 4 and 5 depict upwardly extendingrim 558 ofshowerhead 556 attached tobottom rim 572 ofgas box plate 560. Bothrims lid isolator 574 and encompassedlower cavity 430 ofshowerhead 556. The screw fastening betweenshowerhead 556 andgas box plate 560 ensures good thermal contact over the maximally sized contact area. The thermal flow area extends from the outside at lid isolator 574 (except for a gap betweenlid isolator 574 and eithershowerhead 556 or gas box plate 560) to the inside atlower cavity 430. The structure ofwater cooling channels 562 provides efficient thermal transfer between the water andgas box plate 560, and the mechanical interface between the flange ofgas box plate 560 andshowerhead 556 ensures efficient thermal transfer between them. Accordingly, the cooling ofshowerhead 556 is greatly enhanced. -
Processing chamber 450 further containsheater pedestal 552 connected topedestal stem 554 that may be vertical moved withinprocessing chamber 450. The heater portion ofheater pedestal 552 may be formed of a ceramic. In its upper, deposition position,pedestal 552 holds the substrate in close opposition tolower surface 582 ofshowerhead 556,processing region 426 being defined betweenpedestal 552 andlower surface 582 ofshowerhead 556.Showerhead 556, has a large number of apertures or holes 580 communicating betweenlower cavity 430 andprocessing region 426 to allow the passage of processing gas. The processing gas is supplied throughgas port 432 formed at the center of water-cooledgas box plate 560 made of aluminum. The upper side ofgas box plate 560 is covered by water coolingcover plate 434 surrounding the upper portion ofgas box plate 560 that includesgas port 432.Gas port 432 supplies the processing gases toupper cavity 438 separated fromlower cavity 430 byblocker plate 440, also having a large number ofholes 580 therethrough. One purpose ofcavities showerhead 556, andblocker plate 440 is to evenly distribute the processing gas over the upper face of the substrate. - The substrate may be supported on
pedestal 552, which is illustrated in a raised, deposition position. In a lowered, loading position, liftingring 416 attached to lifttube 417 lifts fourlift pins 418 fit to slide intopedestal 552 so that lift pins 418 can receive the substrate loaded into the chamber throughloadlock port 419 inchamber body 420. In one embodiment,pedestal 552 may contain anoptional confinement ring 610, such as during plasma-enhanced vapor deposition processes. -
Lid isolator 574 is interposed betweenshowerhead 556 andlid rim 466, which can be lifted offchamber body 420 to openprocessing chamber 450 for maintenance access. The vacuum withinprocessing chamber 450 is maintained byvacuum pump 470 connected to pumpplenum 472 withinprocessing chamber 450, which connects toannular pumping channel 474. - As illustrated in
FIG. 4 ,annular chamber liner 680 made of quartz not only defines a side of pumpingchannel 474 but also partially defines afurther choke aperture 682 betweenprocessing region 426 and pumpingchannel 474.Annular chamber liner 680 also supportsconfinement ring 610 in the lowered position ofpedestal 552.Chamber liner 680 also surrounds a circumference at the back ofpedestal 552.Chamber liner 680 rests onnarrow ledge 683 inchamber body 420, but there is little other contact, so as to minimize thermal transport. Belowchamber liner 680 is located a Z-shapedlower chamber shield 684, preferably made of opaque quartz.Lower chamber shield 684 rests on the bottom ofchamber body 420 onannular boss 686 formed on the bottom oflower chamber shield 684. The quartz prevents radiative coupling between the bottom ofpedestal 552 andchamber body 420, andannular boss 686 minimizes conductive heat transfer tochamber body 420. In an alternative embodiment,lower chamber shield 684 includes an inwardly extending bottom lip joined to a conically shaped upper portion conforming to the inner wall ofchamber body 420. While this alternative design is operationally satisfactory, the sloping shape is much more expensive to fabricate in quartz. - In another embodiment,
FIGS. 7-9 illustrateprocessing chamber 750 containing convoluteliquid channel 562 andresistive heating element 770 that may be used to form tungsten-containing materials by vapor deposition process as described herein.Resistive heating element 770 may be a wire and may be formed of or contain a metal such as copper, aluminum, steel, stainless steel, nickel, alloys thereof, or combinations thereof.Resistive heating element 770 may be convolute aboutgas box plate 760 or may take on a variety of shapes. In one example,resistive heating element 770 contains aluminum and is configured to create a controllable temperature gradient acrosslower surface 761 ofgas box plate 760. Preferably,resistive heating element 770 is configured to create a consistent temperature acrosslower surface 761 ofgas box plate 760. - In other embodiments, processing
chamber 750 is connected to and in fluid communication withsources source 720 is a carrier gas source and contains a carrier gas,source 722 is a tungsten gas source and contains a tungsten precursor,source 724 is a nitrogen source and contains a nitrogen precursor,source 726 is a reducing agent gas source and contains a reducing agent.Valve 730 may be positioned betweensource 720 andgas port 432,valve 732 may be positioned betweensource 722 andgas port 432,valve 734 may be positioned betweensource 724 andgas port 432, andvalve 736 may be positioned betweensource 726 andgas port 432. Programmable logic controller (PLC) 738 may be used to control the opening and closing ofvalves Valve 730 may be left turned on to provide a steady stream or flow of a carrier gas fromsource 720. - In one example,
source 720 may contain a carrier gas such as nitrogen, argon, hydrogen, forming gas, or mixtures thereof.Source 722 may have a tungsten precursor, such as tungsten hexafluoride andsource 724 may have a nitrogen precursor such as ammonia. A reducing agent may be contained withinsource 726, which is coupled to and in fluid communication withlid assembly 700. The reducing agent may be silane, hydrogen, diborane, disilane, phosphine, derivatives thereof, or combinations thereof. -
Valve 732 may be positioned betweensource 722 containing the tungsten precursor andlid assembly 700,valve 734 positioned betweensource 724 containing the nitrogen precursor andlid assembly 700, andvalve 736 positioned betweensource 726 and the reducing agent andlid assembly 700. Each ofvalves PLC 738. In one example,PLC 738 is configured to sequentially open andclose valves PLC 738 is configured to simultaneously open andclose valves PLC 738 is configured to sequentially open andclose valves 722 and 744 while forming a tungsten nitride layer during a second ALD process. In another example,PLC 738 is configured to open andclose valve 736 during a pre-nucleation soak process or a post-nucleation soak process while the substrate is exposed to a reducing agent delivered fromsource 726. - The tungsten-containing materials may contain metallic tungsten, tungsten nitride, tungsten silicide, tungsten boride, tungsten phosphide, derivatives thereof, or combinations thereof.
Processing chamber 750 may be used to perform CVD, PE-CVD, pulsed-CVD, ALD, PE-ALD, derivatives thereof, or combinations thereof.Controller 780 andresistive heating element 770 may be used to regulate the temperature oflid assembly 700 during the vapor deposition process for depositing a tungsten-containing material. In one embodiment,lid assembly 700 orgas box plate 760 may be heated or maintained at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 460° C., and more preferably, from about 145° C. to about 155° C., such as about 150° C., during the vapor deposition process of a tungsten-containing material. Convoluteliquid channel 562 may be used to heat orcool lid assembly 700. -
Showerhead 556 has a relatively short upwardly extendingrim 558 screwed togas box plate 760. Bothshowerhead 556 andgas box plate 760 may be formed of a metal, such as aluminum, stainless steel, or alloys thereof. Convoluteliquid channel 562, illustrated inFIG. 9 , is formed in the top ofgas box plate 760 and covered and sealed by water coolingcover plate 434. Water is generally flown through convoluteliquid channel 562. However, alcohols, glycol ethers, and other organic solvents may be used solely or mixed with water to transfer heat away from or tolid assembly 700. -
Water ports cover plate 434 are illustrated inFIGS. 8-9 .Water ports liquid channel 562 near to the center ofgas box plate 760. Convoluteliquid channel 562 is formed in a serpentine though generally circumferential path having bends 568 (e.g., three sharp U-turns or U-shaped bends) as the path progresses from the inside to the outside until the path returns to the inside inradial channel 570.Liquid channel 562 is narrow enough and bends 568 are sharp enough to ensure that the flow of water or other fluids becomes turbulent, thus aiding the flow of heat from the flange ofgas box plate 760 to the water inchannel 562. A liquid temperature regulating system (not shown) may be attached towater ports liquid channel 562 and used to transfer heat away from or tolid assembly 700. In one example,lid assembly 700 is configured to be heated or maintained at a temperature of about 150° C. and is in fluid communication with a source of tungsten precursor (e.g., WF6) and a source of a nitrogen precursor (e.g., NH3). - Several CVD processing chambers that may be useful for some of the deposition processes described herein may be further described in commonly assigned U.S. Pat. Nos. 5,846,332, 6,079,356, 6,162,715, and 6,827,815, which are incorporated herein by reference in their entirety. Several ALD processing chambers that may be useful for some of the deposition processes described herein may be further described in commonly assigned U.S. Pat. Nos. 6,660,126, 6,716,287, 6,821,563, 6,878,206, 6,916,398, 6,936,906, 6,998,014, 7,175,713, and 7,204,886, commonly assigned U.S. Ser. No. 09/798,258, filed Mar. 2, 2001, and published as 2002-0121241; U.S. Ser. No. 10/032,293, filed Dec. 21, 2001, and published as 2003-0116087; U.S. Ser. No. 10/356,251, filed Jan. 31, 2003, and published as 2004-0065255; U.S. Ser. No. 10/268,438, filed Oct. 9, 2002, and published as 2004-0069227; U.S. Ser. No. 11/127,753, filed May 12, 2005, and published as 2005-0271812; U.S. Ser. No. 10/281,079, filed Oct. 25, 2002, and published as 2003-0121608, and commonly assigned U.S. Ser. Nos. 11/556,745, 11/556,752, 11/556,756, 11/556,758, and 11/556,763, each filed on Nov. 6, 2006, and published as 2007-0119370, 2007-0119371, 2007-0128862, 2007-0128863, 2007-0128864, which are incorporated herein by reference in their entirety.
- In one embodiment, a processing chamber for depositing tungsten-containing materials contains a lid plate containing an embedded heating element disposed therein. In another embodiment, a processing chamber for depositing tungsten-containing materials contains a gas box plate containing an embedded heating element disposed therein. In another embodiment, a processing chamber for depositing tungsten-containing materials contains an insulating jacket heater containing heating element disposed thereon. Heating elements may be configured to generate more heat near a particular region of lid plate, such as an inner region or an outer region. A controller may be used to regulate the temperature of lid plate by adjusting power levels to the heating element. In various embodiments, the processing chamber for depositing tungsten-containing materials may contain an in situ plasma source or a remote plasma source.
- In one embodiment, a tungsten nitride layer and a tungsten nucleation layer are deposited during a vapor deposition process. The lid plate may be heated to a temperature within a range from about 140° C. to about 160° C., preferably, about 150° C. A substrate may be exposed to a pre-soak gas containing silane during a pre-soak process. The pre-soak process may last for a time period within a range about 10 seconds to about 30 seconds, preferably about 20 seconds, while the processing chamber may have an internal pressure within a range from about 50 Torr to about 150 Torr, preferably, about 90 Torr. A tungsten nitride layer is deposited at a process temperature within a range from about 375° C. to about 425° C., preferably, about 400° C. The pre-soak process and the tungsten nitride deposition may be repeated about 25 times to form a tungsten nitride material. Subsequently, a tungsten nucleation layer may be deposited by an ALD process by repeating about 15 cycles of exposing the substrate to the tungsten precursor and a reducing agent (e.g., SiH4 or B2H6).
- In one example, the tungsten nitride is deposited by a CVD process wherein the tungsten precursor (e.g., WF6) is co-flowed with the nitrogen precursor (e.g., NH3). The lid assembly contains a lid plate heated to a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., and more preferably, from about 145° C. to about 155° C., such as about 150° C. The processing chamber may have an internal pressure within a range from about 2 Torr to about 20 Torr, such as about 6 Torr. In another example, the tungsten nitride is deposited by an ALD process wherein the tungsten precursor (e.g., WF6) is sequentially pulsed with the nitrogen precursor (e.g., NH3). The substrate may be exposed to multiple ALD cycles, wherein each ALD cycle exposes the substrate to a pre-soak gas containing a reducing agent (e.g., SiH4 or B2H6) for about 0.5 seconds, purge gas for about 2 seconds, tungsten precursor for about 1.5 seconds, purge gas for about 2 seconds, nitrogen precursor for about 2.5 seconds, and purge gas for about 2 seconds.
- While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (20)
1. A method for forming a tungsten-containing material on a substrate, comprising:
positioning a substrate within a processing chamber comprising a lid plate;
heating the lid plate to a temperature within a range from about 120° C. to about 180° C.;
depositing a tungsten nitride layer over the substrate during a vapor deposition process within the processing chamber; and
depositing a tungsten nucleation layer over the tungsten nitride layer during an atomic layer deposition process within the processing chamber.
2. The method of claim 1 , wherein the lid plate is heated by a resistive heating element therein.
3. The method of claim 2 , wherein the lid plate is heated to a temperature within a range from about 140° C. to about 160° C.
4. The method of claim 3 , wherein the temperature is within a range from about 145° C. to about 155° C.
5. The method of claim 1 , wherein the tungsten nitride layer is deposited during a chemical vapor deposition process comprising co-flowing a tungsten precursor and a nitrogen precursor, the tungsten precursor comprises tungsten hexafluoride, and the nitrogen precursor comprises ammonia.
6. The method of claim 1 , further comprising depositing a tungsten adhesion layer over the substrate prior to depositing the tungsten nitride layer thereon.
7. The method of claim 6 , wherein the tungsten adhesion layer is deposited during an atomic layer deposition process within the processing chamber.
8. The method of claim 6 , further comprising exposing the substrate to a reducing agent during a pre-soak process prior to depositing the tungsten adhesion layer or the tungsten nucleation layer.
9. The method of claim 8 , wherein the reducing agent is selected from the group consisting of silane, hydrogen, diborane, disilane, phosphine, derivatives thereof, and combinations thereof.
10. The method of claim 6 , further comprising exposing the tungsten adhesion layer or the tungsten nucleation layer to a reducing agent during a post-soak process.
11. The method of claim 10 , wherein the reducing agent is selected from the group consisting of silane, hydrogen, diborane, disilane, phosphine, derivatives thereof, and combinations thereof.
12. The method of claim 1 , wherein a bulk tungsten layer is deposited over the tungsten nucleation layer during a thermal chemical vapor deposition process.
13. A method for forming a tungsten-containing material on a substrate, comprising:
positioning a substrate within a processing chamber comprising a lid plate;
heating the lid plate to a temperature within a range from about 120° C. to about 180° C.;
exposing the substrate to a reducing gas during a pre-nucleation soak process;
depositing a tungsten adhesion layer over the substrate during a first vapor deposition process within the processing chamber;
depositing a tungsten nitride layer over the tungsten adhesion layer during a second vapor deposition process within the processing chamber;
depositing a tungsten nucleation layer over the tungsten nitride layer during a third vapor deposition process within the processing chamber;
exposing the substrate to another reducing gas during a post-nucleation soak process within the processing chamber; and
depositing a tungsten bulk layer over the tungsten nucleation layer during a thermal chemical vapor deposition process within the processing chamber.
14. The method of claim 13 , wherein the lid plate is heated by a resistive heating element therein.
15. The method of claim 14 , wherein the lid plate is heated to a temperature within a range from about 140° C. to about 160° C.
16. The method of claim 15 , wherein the temperature is within a range from about 145° C. to about 155° C.
17. The method of claim 13 , wherein the first or third vapor deposition process is a pulsed-CVD process comprising exposing the substrate to pulses of a co-flowed gaseous mixture comprising tungsten hexafluoride and silane or tungsten hexafluoride and diborane.
18. The method of claim 13 , wherein the first or third vapor deposition process is an ALD process comprising exposing the substrate sequentially to tungsten hexafluoride and silane or tungsten hexafluoride and diborane.
19. The method of claim 13 , wherein the second vapor deposition process is a CVD process comprising exposing the substrate to a co-flowed gaseous mixture comprising tungsten hexafluoride and ammonia, tungsten hexafluoride, ammonia, and silane, or tungsten hexafluoride, ammonia, and diborane.
20. The method of claim 13 , wherein the second vapor deposition process is an ALD process comprising exposing the substrate sequentially to tungsten hexafluoride and ammonia, tungsten hexafluoride, ammonia, and silane, or tungsten hexafluoride, ammonia, and diborane.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/021,798 US20080206987A1 (en) | 2007-01-29 | 2008-01-29 | Process for tungsten nitride deposition by a temperature controlled lid assembly |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88714207P | 2007-01-29 | 2007-01-29 | |
US94408507P | 2007-06-14 | 2007-06-14 | |
US12/021,798 US20080206987A1 (en) | 2007-01-29 | 2008-01-29 | Process for tungsten nitride deposition by a temperature controlled lid assembly |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080206987A1 true US20080206987A1 (en) | 2008-08-28 |
Family
ID=39714455
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/021,798 Abandoned US20080206987A1 (en) | 2007-01-29 | 2008-01-29 | Process for tungsten nitride deposition by a temperature controlled lid assembly |
US12/021,825 Expired - Fee Related US8821637B2 (en) | 2007-01-29 | 2008-01-29 | Temperature controlled lid assembly for tungsten nitride deposition |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/021,825 Expired - Fee Related US8821637B2 (en) | 2007-01-29 | 2008-01-29 | Temperature controlled lid assembly for tungsten nitride deposition |
Country Status (1)
Country | Link |
---|---|
US (2) | US20080206987A1 (en) |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7695563B2 (en) | 2001-07-13 | 2010-04-13 | Applied Materials, Inc. | Pulsed deposition process for tungsten nucleation |
US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
US7745333B2 (en) | 2000-06-28 | 2010-06-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US7745329B2 (en) | 2002-02-26 | 2010-06-29 | Applied Materials, Inc. | Tungsten nitride atomic layer deposition processes |
US7867914B2 (en) | 2002-04-16 | 2011-01-11 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
US20110223334A1 (en) * | 2010-03-12 | 2011-09-15 | Applied Materials, Inc. | Atomic layer deposition chamber with multi inject |
US20130323435A1 (en) * | 2012-06-01 | 2013-12-05 | Air Products And Chemicals, Inc. | Organoaminodisilane precursors and methods for depositing films comprising same |
US8617985B2 (en) | 2011-10-28 | 2013-12-31 | Applied Materials, Inc. | High temperature tungsten metallization process |
US20140106083A1 (en) * | 2012-10-11 | 2014-04-17 | Applied Materials, Inc. | Tungsten growth modulation by controlling surface composition |
US8821637B2 (en) * | 2007-01-29 | 2014-09-02 | Applied Materials, Inc. | Temperature controlled lid assembly for tungsten nitride deposition |
US20150050753A1 (en) * | 2013-08-16 | 2015-02-19 | Applied Materials, Inc. | Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing |
US20160312360A1 (en) * | 2015-04-22 | 2016-10-27 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
US20170304849A1 (en) * | 2016-04-26 | 2017-10-26 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
US20180163306A1 (en) * | 2016-12-12 | 2018-06-14 | Applied Materials, Inc. | UHV In-Situ Cryo-Cool Chamber |
US10508338B2 (en) * | 2015-05-26 | 2019-12-17 | The Japan Steel Works, Ltd. | Device for atomic layer deposition |
US10604838B2 (en) | 2015-05-26 | 2020-03-31 | The Japan Steel Works, Ltd. | Apparatus for atomic layer deposition and exhaust unit for apparatus for atomic layer deposition |
WO2020081600A1 (en) * | 2018-10-18 | 2020-04-23 | Applied Materials, Inc. | Load lock body portions, load lock apparatus, and methods for manufacturing the same |
US10636705B1 (en) | 2018-11-29 | 2020-04-28 | Applied Materials, Inc. | High pressure annealing of metal gate structures |
US10633737B2 (en) | 2015-05-26 | 2020-04-28 | The Japan Steel Works, Ltd. | Device for atomic layer deposition |
CN113366144A (en) * | 2019-01-28 | 2021-09-07 | 朗姆研究公司 | Deposition of metal films |
US11732355B2 (en) * | 2018-12-20 | 2023-08-22 | Applied Materials, Inc. | Method and apparatus for supplying improved gas flow to a processing volume of a processing chamber |
US11821071B2 (en) | 2019-03-11 | 2023-11-21 | Lam Research Corporation | Precursors for deposition of molybdenum-containing films |
US11970776B2 (en) | 2020-01-27 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition of metal films |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8075728B2 (en) * | 2008-02-28 | 2011-12-13 | Applied Materials, Inc. | Gas flow equalizer plate suitable for use in a substrate process chamber |
JP5690498B2 (en) | 2009-03-27 | 2015-03-25 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Method for depositing a film on a substrate and apparatus for delivering a vaporized precursor compound |
CN102414794B (en) * | 2009-04-21 | 2015-01-28 | 应用材料公司 | CVD apparatus for improved film thickness non-uniformity and particle performance |
US20110180233A1 (en) * | 2010-01-27 | 2011-07-28 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
JP2011256946A (en) * | 2010-06-09 | 2011-12-22 | Tohoku Univ | Pressure-reducible processing apparatus |
US10232324B2 (en) * | 2012-07-12 | 2019-03-19 | Applied Materials, Inc. | Gas mixing apparatus |
US10043686B2 (en) * | 2013-12-31 | 2018-08-07 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
JP5792364B1 (en) * | 2014-07-31 | 2015-10-07 | 株式会社日立国際電気 | Substrate processing apparatus, chamber lid assembly, semiconductor device manufacturing method, program, and recording medium |
IT201600099783A1 (en) * | 2016-10-05 | 2018-04-05 | Lpe Spa | REACTOR FOR EPITAXIAL DEPOSITION WITH EXTERIOR REFLECTOR OF THE REACTION CHAMBER AND METHOD OF COOLING A SUSCECTOR AND SUBSTRATES |
US11164737B2 (en) * | 2017-08-30 | 2021-11-02 | Applied Materials, Inc. | Integrated epitaxy and preclean system |
US11549183B2 (en) * | 2019-05-24 | 2023-01-10 | Applied Materials, Inc. | Showerhead with inlet mixer |
US11605544B2 (en) | 2020-09-18 | 2023-03-14 | Applied Materials, Inc. | Methods and systems for cleaning high aspect ratio structures |
Citations (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4806321A (en) * | 1984-07-26 | 1989-02-21 | Research Development Corporation Of Japan | Use of infrared radiation and an ellipsoidal reflection mirror |
US4813846A (en) * | 1987-02-13 | 1989-03-21 | Leybold-Heraeus Gmbh | Inserting device for vacuum apparatus |
US4892751A (en) * | 1987-01-19 | 1990-01-09 | Hitachi, Ltd. | Method of and apparatus for forming a thin film |
US4993357A (en) * | 1987-12-23 | 1991-02-19 | Cs Halbleiter -Und Solartechnologie Gmbh | Apparatus for atomic layer epitaxial growth |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US5082798A (en) * | 1990-04-18 | 1992-01-21 | Mitsubishi Denki Kabushiki Kaisha | Crystal growth method |
US5085885A (en) * | 1990-09-10 | 1992-02-04 | University Of Delaware | Plasma-induced, in-situ generation, transport and use or collection of reactive precursors |
US5091320A (en) * | 1990-06-15 | 1992-02-25 | Bell Communications Research, Inc. | Ellipsometric control of material growth |
US5186718A (en) * | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
US5278435A (en) * | 1992-06-08 | 1994-01-11 | Apa Optics, Inc. | High responsivity ultraviolet gallium nitride detector |
US5281274A (en) * | 1990-06-22 | 1994-01-25 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors |
US5286296A (en) * | 1991-01-10 | 1994-02-15 | Sony Corporation | Multi-chamber wafer process equipment having plural, physically communicating transfer means |
US5290748A (en) * | 1990-01-16 | 1994-03-01 | Neste Oy | Polymerization catalyst for olefines |
US5294286A (en) * | 1984-07-26 | 1994-03-15 | Research Development Corporation Of Japan | Process for forming a thin film of silicon |
US5296403A (en) * | 1990-01-31 | 1994-03-22 | Research Development Corp. Of Japan | Method of manufacturing a static induction field-effect transistor |
US5395791A (en) * | 1992-05-22 | 1995-03-07 | Minnesota Mining And Manufacturing Company | Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
US5483919A (en) * | 1990-08-31 | 1996-01-16 | Nippon Telegraph And Telephone Corporation | Atomic layer epitaxy method and apparatus |
US5484664A (en) * | 1988-04-27 | 1996-01-16 | Fujitsu Limited | Hetero-epitaxially grown compound semiconductor substrate |
US5601651A (en) * | 1992-09-17 | 1997-02-11 | Fujitsu Limited | Flow control valve for use in fabrication of semiconductor devices |
US5609689A (en) * | 1995-06-09 | 1997-03-11 | Tokyo Electron Limited | Vacuum process apparaus |
US5705224A (en) * | 1991-03-20 | 1998-01-06 | Kokusai Electric Co., Ltd. | Vapor depositing method |
US5707880A (en) * | 1994-08-19 | 1998-01-13 | General Electric Company | Hermetically sealed radiation imager |
US5711811A (en) * | 1994-11-28 | 1998-01-27 | Mikrokemia Oy | Method and equipment for growing thin films |
US5730801A (en) * | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US5730802A (en) * | 1994-05-20 | 1998-03-24 | Sharp Kabushiki Kaisha | Vapor growth apparatus and vapor growth method capable of growing good productivity |
US5733816A (en) * | 1995-12-13 | 1998-03-31 | Micron Technology, Inc. | Method for depositing a tungsten layer on silicon |
US5856219A (en) * | 1992-12-02 | 1999-01-05 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a high-density dynamic random-access memory |
US5855675A (en) * | 1997-03-03 | 1999-01-05 | Genus, Inc. | Multipurpose processing chamber for chemical vapor deposition processes |
US5855680A (en) * | 1994-11-28 | 1999-01-05 | Neste Oy | Apparatus for growing thin films |
US5858102A (en) * | 1996-07-29 | 1999-01-12 | Tsai; Charles Su-Chang | Apparatus of chemical vapor for producing layer variation by planetary susceptor rotation |
US5866213A (en) * | 1994-06-03 | 1999-02-02 | Tokyo Electron Limited | Method for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
US5866795A (en) * | 1997-03-17 | 1999-02-02 | Applied Materials, Inc. | Liquid flow rate estimation and verification by direct liquid measurement |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US5882165A (en) * | 1986-12-19 | 1999-03-16 | Applied Materials, Inc. | Multiple chamber integrated process system |
US5882413A (en) * | 1997-07-11 | 1999-03-16 | Brooks Automation, Inc. | Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer |
US6015590A (en) * | 1994-11-28 | 2000-01-18 | Neste Oy | Method for growing thin films |
US6015917A (en) * | 1998-01-23 | 2000-01-18 | Advanced Technology Materials, Inc. | Tantalum amide precursors for deposition of tantalum nitride on a substrate |
US6025627A (en) * | 1998-05-29 | 2000-02-15 | Micron Technology, Inc. | Alternate method and structure for improved floating gate tunneling devices |
US6036773A (en) * | 1996-08-21 | 2000-03-14 | Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry | Method for growing Group III atomic layer |
US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
US6174809B1 (en) * | 1997-12-31 | 2001-01-16 | Samsung Electronics, Co., Ltd. | Method for forming metal layer using atomic layer deposition |
US6335280B1 (en) * | 1997-01-13 | 2002-01-01 | Asm America, Inc. | Tungsten silicide deposition process |
US20020000598A1 (en) * | 1999-12-08 | 2002-01-03 | Sang-Bom Kang | Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors |
US20020004293A1 (en) * | 2000-05-15 | 2002-01-10 | Soininen Pekka J. | Method of growing electrical conductors |
US20020009544A1 (en) * | 1999-08-20 | 2002-01-24 | Mcfeely F. Read | Delivery systems for gases for gases via the sublimation of solid precursors |
US20020007790A1 (en) * | 2000-07-22 | 2002-01-24 | Park Young-Hoon | Atomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method |
US6342277B1 (en) * | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
US20020016084A1 (en) * | 2000-04-28 | 2002-02-07 | Todd Michael A. | CVD syntheses of silicon nitride materials |
US20020019121A1 (en) * | 2000-06-20 | 2002-02-14 | Pyo Sung Gyu | Method of forming a metal wiring in a semiconductor device |
US6348376B2 (en) * | 1997-09-29 | 2002-02-19 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same |
US20020020869A1 (en) * | 1999-12-22 | 2002-02-21 | Ki-Seon Park | Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof |
US20020021544A1 (en) * | 2000-08-11 | 2002-02-21 | Hag-Ju Cho | Integrated circuit devices having dielectric regions protected with multi-layer insulation structures and methods of fabricating same |
US20030013300A1 (en) * | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
US20030013320A1 (en) * | 2001-05-31 | 2003-01-16 | Samsung Electronics Co., Ltd. | Method of forming a thin film using atomic layer deposition |
US20030017697A1 (en) * | 2001-07-19 | 2003-01-23 | Kyung-In Choi | Methods of forming metal layers using metallic precursors |
US6511539B1 (en) * | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
US20030022487A1 (en) * | 2001-07-25 | 2003-01-30 | Applied Materials, Inc. | Barrier formation using novel sputter-deposition method |
US20030032281A1 (en) * | 2000-03-07 | 2003-02-13 | Werkhoven Christiaan J. | Graded thin films |
US20030031807A1 (en) * | 1999-10-15 | 2003-02-13 | Kai-Erik Elers | Deposition of transition metal carbides |
US6524952B1 (en) * | 1999-06-25 | 2003-02-25 | Applied Materials, Inc. | Method of forming a titanium silicide layer on a substrate |
US20030038369A1 (en) * | 2001-08-22 | 2003-02-27 | Nace Layadi | Method for reducing a metal seam in an interconnect structure and a device manufactured thereby |
US20040005749A1 (en) * | 2002-07-02 | 2004-01-08 | Choi Gil-Heyun | Methods of forming dual gate semiconductor devices having a metal nitride layer |
US20040009307A1 (en) * | 2000-06-08 | 2004-01-15 | Won-Yong Koh | Thin film forming method |
US20040013803A1 (en) * | 2002-07-16 | 2004-01-22 | Applied Materials, Inc. | Formation of titanium nitride films using a cyclical deposition process |
US20040015300A1 (en) * | 2002-07-22 | 2004-01-22 | Seshadri Ganguli | Method and apparatus for monitoring solid precursor delivery |
US20040011504A1 (en) * | 2002-07-17 | 2004-01-22 | Ku Vincent W. | Method and apparatus for gas temperature control in a semiconductor processing system |
US20040014320A1 (en) * | 2002-07-17 | 2004-01-22 | Applied Materials, Inc. | Method and apparatus of generating PDMAT precursor |
US20040014315A1 (en) * | 2001-07-16 | 2004-01-22 | Applied Materials, Inc. | Formation of composite tungsten films |
US20040018747A1 (en) * | 2002-07-20 | 2004-01-29 | Lee Jung-Hyun | Deposition method of a dielectric layer |
US20040018304A1 (en) * | 2002-07-10 | 2004-01-29 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US20040018723A1 (en) * | 2000-06-27 | 2004-01-29 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6686271B2 (en) * | 2000-05-15 | 2004-02-03 | Asm International N.V. | Protective layers prior to alternating layer deposition |
US20040025370A1 (en) * | 2002-07-29 | 2004-02-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
US20040033698A1 (en) * | 2002-08-17 | 2004-02-19 | Lee Yun-Jung | Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same |
US6838376B2 (en) * | 1997-11-05 | 2005-01-04 | Tokyo Electron Limited | Method of forming semiconductor wiring structures |
US20050008779A1 (en) * | 2002-04-08 | 2005-01-13 | Yang Michael Xi | Multiple precursor cyclical depositon system |
US20050006799A1 (en) * | 2002-07-23 | 2005-01-13 | Gregg John N. | Method and apparatus to help promote contact of gas with vaporized material |
US20050009325A1 (en) * | 2003-06-18 | 2005-01-13 | Hua Chung | Atomic layer deposition of barrier materials |
US20050031786A1 (en) * | 2001-05-22 | 2005-02-10 | Novellus Systems, Inc. | Method for reducing tungsten film roughness and improving step coverage |
US6855368B1 (en) * | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
US20060009034A1 (en) * | 2000-06-28 | 2006-01-12 | Lai Ken K | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US20060024959A1 (en) * | 2004-07-30 | 2006-02-02 | Applied Materials, Inc. | Thin tungsten silicide layer deposition and gate metal integration |
US20060030148A1 (en) * | 2001-02-02 | 2006-02-09 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US6998014B2 (en) * | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US20060040052A1 (en) * | 2001-10-10 | 2006-02-23 | Hongbin Fang | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US7005372B2 (en) * | 2003-01-21 | 2006-02-28 | Novellus Systems, Inc. | Deposition of tungsten nitride |
US20070003698A1 (en) * | 2001-10-26 | 2007-01-04 | Ling Chen | Enhanced copper growth with ultrathin barrier layer for high performance interconnects |
US20070009658A1 (en) * | 2001-07-13 | 2007-01-11 | Yoo Jong H | Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process |
US20070020924A1 (en) * | 2002-02-26 | 2007-01-25 | Shulin Wang | Tungsten nitride atomic layer deposition processes |
US20070020890A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Method and apparatus for semiconductor processing |
US20080008823A1 (en) * | 2003-01-07 | 2008-01-10 | Ling Chen | Deposition processes for tungsten-containing barrier layers |
US20080014352A1 (en) * | 2002-04-16 | 2008-01-17 | Ming Xi | System and method for forming an integrated barrier layer |
Family Cites Families (158)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE393967B (en) | 1974-11-29 | 1977-05-31 | Sateko Oy | PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE |
FI57975C (en) | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | OVER ANCHORING VIDEO UPDATE FOR AVAILABILITY |
US4389973A (en) * | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
US4415275A (en) | 1981-12-21 | 1983-11-15 | Dietrich David E | Swirl mixing device |
GB2162207B (en) | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
US4761269A (en) | 1986-06-12 | 1988-08-02 | Crystal Specialties, Inc. | Apparatus for depositing material on a substrate |
JPH0639357B2 (en) * | 1986-09-08 | 1994-05-25 | 新技術開発事業団 | Method for growing element semiconductor single crystal thin film |
JPS63227011A (en) * | 1987-03-17 | 1988-09-21 | Fujitsu Ltd | Chemical vapor deposition system |
DE3721637A1 (en) | 1987-06-30 | 1989-01-12 | Aixtron Gmbh | GAS INLET FOR A MULTIPLE DIFFERENT REACTION GAS IN REACTION VESSELS |
DE3801147A1 (en) | 1988-01-16 | 1989-07-27 | Philips Patentverwaltung | DEVICE FOR GENERATING A GAS FLOW ENRICHED WITH THE VAPOR OF A LITTLE VOLATILE FABRIC |
FR2628985B1 (en) | 1988-03-22 | 1990-12-28 | Labo Electronique Physique | EPITAXY REACTOR WITH WALL PROTECTION |
US5261959A (en) | 1988-05-26 | 1993-11-16 | General Electric Company | Diamond crystal growth apparatus |
JPH0824191B2 (en) | 1989-03-17 | 1996-03-06 | 富士通株式会社 | Thin film transistor |
US5178681A (en) * | 1991-01-29 | 1993-01-12 | Applied Materials, Inc. | Suspension system for semiconductor reactors |
US5173327A (en) | 1991-06-18 | 1992-12-22 | Micron Technology, Inc. | LPCVD process for depositing titanium films for semiconductor devices |
DE4124018C1 (en) * | 1991-07-19 | 1992-11-19 | Leybold Ag, 6450 Hanau, De | |
US5338362A (en) | 1992-08-29 | 1994-08-16 | Tokyo Electron Limited | Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments |
US5607009A (en) | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
JP3265042B2 (en) * | 1993-03-18 | 2002-03-11 | 東京エレクトロン株式会社 | Film formation method |
US5443647A (en) | 1993-04-28 | 1995-08-22 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for depositing a refractory thin film by chemical vapor deposition |
US5580421A (en) | 1994-06-14 | 1996-12-03 | Fsi International | Apparatus for surface conditioning |
US5796116A (en) | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
TW283250B (en) | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
US5906683A (en) * | 1996-04-16 | 1999-05-25 | Applied Materials, Inc. | Lid assembly for semiconductor processing chamber |
US6313035B1 (en) * | 1996-05-31 | 2001-11-06 | Micron Technology, Inc. | Chemical vapor deposition using organometallic precursors |
US5846332A (en) | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
US5916365A (en) * | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
US5835677A (en) | 1996-10-03 | 1998-11-10 | Emcore Corporation | Liquid vaporizer system and method |
US6071572A (en) * | 1996-10-15 | 2000-06-06 | Applied Materials, Inc. | Forming tin thin films using remote activated specie generation |
US5882411A (en) * | 1996-10-21 | 1999-03-16 | Applied Materials, Inc. | Faceplate thermal choke in a CVD plasma reactor |
US5807792A (en) | 1996-12-18 | 1998-09-15 | Siemens Aktiengesellschaft | Uniform distribution of reactants in a device layer |
JPH10306377A (en) | 1997-05-02 | 1998-11-17 | Tokyo Electron Ltd | Method for supplying minute amount of gas and device therefor |
US6156382A (en) | 1997-05-16 | 2000-12-05 | Applied Materials, Inc. | Chemical vapor deposition process for depositing tungsten |
US6162715A (en) | 1997-06-30 | 2000-12-19 | Applied Materials, Inc. | Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
US6309713B1 (en) | 1997-06-30 | 2001-10-30 | Applied Materials, Inc. | Deposition of tungsten nitride by plasma enhanced chemical vapor deposition |
FI972874A0 (en) | 1997-07-04 | 1997-07-04 | Mikrokemia Oy | Foerfarande och anordning Foer framstaellning av tunnfilmer |
US6197683B1 (en) * | 1997-09-29 | 2001-03-06 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same |
KR100274603B1 (en) | 1997-10-01 | 2001-01-15 | 윤종용 | Method and apparatus for fabricating semiconductor device |
US6861356B2 (en) * | 1997-11-05 | 2005-03-01 | Tokyo Electron Limited | Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film |
US5972430A (en) | 1997-11-26 | 1999-10-26 | Advanced Technology Materials, Inc. | Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer |
US6079356A (en) * | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
US6099904A (en) | 1997-12-02 | 2000-08-08 | Applied Materials, Inc. | Low resistivity W using B2 H6 nucleation step |
US6433314B1 (en) | 1998-04-08 | 2002-08-13 | Applied Materials, Inc. | Direct temperature control for a component of a substrate processing chamber |
US6296711B1 (en) | 1998-04-14 | 2001-10-02 | Cvd Systems, Inc. | Film processing system |
KR100282853B1 (en) * | 1998-05-18 | 2001-04-02 | 서성기 | Apparatus for thin film deposition using cyclic gas injection |
KR100267885B1 (en) * | 1998-05-18 | 2000-11-01 | 서성기 | Deposition apparatus |
NL1009327C2 (en) | 1998-06-05 | 1999-12-10 | Asm Int | Method and device for transferring wafers. |
KR100275738B1 (en) | 1998-08-07 | 2000-12-15 | 윤종용 | Method for producing thin film using atomatic layer deposition |
US6143082A (en) | 1998-10-08 | 2000-11-07 | Novellus Systems, Inc. | Isolation of incompatible processes in a multi-station processing chamber |
US20030101938A1 (en) | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US6454860B2 (en) | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
KR100331544B1 (en) | 1999-01-18 | 2002-04-06 | 윤종용 | Method for introducing gases into a reactor chamber and a shower head used therein |
US6305314B1 (en) * | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6200893B1 (en) * | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
KR100347379B1 (en) | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | Atomic layer deposition apparatus for depositing multi substrate |
FI118342B (en) | 1999-05-10 | 2007-10-15 | Asm Int | Apparatus for making thin films |
KR100319494B1 (en) | 1999-07-15 | 2002-01-09 | 김용일 | Apparatus for Deposition of thin films on wafers through atomic layer epitaxial process |
JP3909792B2 (en) | 1999-08-20 | 2007-04-25 | パイオニア株式会社 | Raw material supply apparatus and raw material supply method in chemical vapor deposition |
US6309966B1 (en) * | 1999-09-03 | 2001-10-30 | Motorola, Inc. | Apparatus and method of a low pressure, two-step nucleation tungsten deposition |
US6558509B2 (en) * | 1999-11-30 | 2003-05-06 | Applied Materials, Inc. | Dual wafer load lock |
US6452338B1 (en) | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
KR100330749B1 (en) | 1999-12-17 | 2002-04-03 | 서성기 | Thin film deposition apparatus for semiconductor |
FI118343B (en) | 1999-12-28 | 2007-10-15 | Asm Int | Apparatus for making thin films |
FI118474B (en) | 1999-12-28 | 2007-11-30 | Asm Int | Apparatus for making thin films |
KR100378871B1 (en) | 2000-02-16 | 2003-04-07 | 주식회사 아펙스 | showerhead apparatus for radical assisted deposition |
FI117978B (en) | 2000-04-14 | 2007-05-15 | Asm Int | Method and apparatus for constructing a thin film on a substrate |
TW576873B (en) | 2000-04-14 | 2004-02-21 | Asm Int | Method of growing a thin film onto a substrate |
US7060132B2 (en) | 2000-04-14 | 2006-06-13 | Asm International N.V. | Method and apparatus of growing a thin film |
FI118805B (en) | 2000-05-15 | 2008-03-31 | Asm Int | A method and configuration for introducing a gas phase reactant into a reaction chamber |
KR100427423B1 (en) * | 2000-05-25 | 2004-04-13 | 가부시키가이샤 고베 세이코쇼 | Inner tube for cvd apparatus |
KR100332314B1 (en) * | 2000-06-24 | 2002-04-12 | 서성기 | Reactor for depositing thin film on wafer |
KR100332313B1 (en) | 2000-06-24 | 2002-04-12 | 서성기 | Apparatus and method for depositing thin film on wafer |
FI20001694A0 (en) | 2000-07-20 | 2000-07-20 | Asm Microchemistry Oy | A method for growing a thin film on a substrate |
US6302965B1 (en) | 2000-08-15 | 2001-10-16 | Applied Materials, Inc. | Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces |
KR100436941B1 (en) | 2000-11-07 | 2004-06-23 | 주성엔지니어링(주) | apparatus and method for depositing thin film |
US20020104481A1 (en) | 2000-12-06 | 2002-08-08 | Chiang Tony P. | System and method for modulated ion-induced atomic layer deposition (MII-ALD) |
US6878402B2 (en) | 2000-12-06 | 2005-04-12 | Novellus Systems, Inc. | Method and apparatus for improved temperature control in atomic layer deposition |
US20020076507A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Process sequence for atomic layer deposition |
US20020076481A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Chamber pressure state-based control for a reactor |
US6630201B2 (en) | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
US20020073924A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Gas introduction system for a reactor |
JP3963078B2 (en) | 2000-12-25 | 2007-08-22 | 株式会社高純度化学研究所 | Tertiary amylimidotris (dimethylamido) tantalum, method for producing the same, raw material solution for MOCVD using the same, and method for forming a tantalum nitride film using the same |
KR100434487B1 (en) | 2001-01-17 | 2004-06-05 | 삼성전자주식회사 | Shower head & film forming apparatus having the same |
US6613656B2 (en) | 2001-02-13 | 2003-09-02 | Micron Technology, Inc. | Sequential pulse deposition |
US20020121241A1 (en) | 2001-03-02 | 2002-09-05 | Nguyen Anh N. | Processing chamber and method of distributing process fluids therein to facilitate sequential deposition of films |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6734020B2 (en) * | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
US20020144655A1 (en) | 2001-04-05 | 2002-10-10 | Chiang Tony P. | Gas valve system for a reactor |
US20020144657A1 (en) | 2001-04-05 | 2002-10-10 | Chiang Tony P. | ALD reactor employing electrostatic chuck |
US6561498B2 (en) | 2001-04-09 | 2003-05-13 | Lorex Industries, Inc. | Bubbler for use in vapor generation systems |
JP4680429B2 (en) * | 2001-06-26 | 2011-05-11 | Okiセミコンダクタ株式会社 | High speed reading control method in text-to-speech converter |
TW539822B (en) * | 2001-07-03 | 2003-07-01 | Asm Inc | Source chemical container assembly |
US20030198754A1 (en) | 2001-07-16 | 2003-10-23 | Ming Xi | Aluminum oxide chamber and process |
US7105444B2 (en) * | 2001-07-19 | 2006-09-12 | Samsung Electronics Co., Ltd. | Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same |
US7098131B2 (en) | 2001-07-19 | 2006-08-29 | Samsung Electronics Co., Ltd. | Methods for forming atomic layers and thin films including tantalum nitride and devices including the same |
JP2005504885A (en) | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | Barrier formation using a novel sputter deposition method |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
WO2003023835A1 (en) * | 2001-08-06 | 2003-03-20 | Genitech Co., Ltd. | Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof |
US6820570B2 (en) * | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
US20030042630A1 (en) * | 2001-09-05 | 2003-03-06 | Babcoke Jason E. | Bubbler for gas delivery |
US6718126B2 (en) * | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US6936906B2 (en) * | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US6797108B2 (en) | 2001-10-05 | 2004-09-28 | Applied Materials, Inc. | Apparatus and method for evenly flowing processing gas onto a semiconductor wafer |
TW512504B (en) * | 2001-10-12 | 2002-12-01 | Advanced Semiconductor Eng | Package substrate having protruded and recessed side edge |
US7204886B2 (en) * | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
AU2002343583A1 (en) | 2001-10-29 | 2003-05-12 | Genus, Inc. | Chemical vapor deposition system |
US6773507B2 (en) | 2001-12-06 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
US20030116087A1 (en) | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
US6827815B2 (en) | 2002-01-15 | 2004-12-07 | Applied Materials, Inc. | Showerhead assembly for a processing chamber |
US7175713B2 (en) * | 2002-01-25 | 2007-02-13 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6866746B2 (en) | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US7063981B2 (en) | 2002-01-30 | 2006-06-20 | Asm International N.V. | Active pulse monitoring in a chemical reactor |
US6777352B2 (en) | 2002-02-11 | 2004-08-17 | Applied Materials, Inc. | Variable flow deposition apparatus and method in semiconductor substrate processing |
US20030216981A1 (en) | 2002-03-12 | 2003-11-20 | Michael Tillman | Method and system for hosting centralized online point-of-sale activities for a plurality of distributed customers and vendors |
US6720027B2 (en) * | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US6932871B2 (en) | 2002-04-16 | 2005-08-23 | Applied Materials, Inc. | Multi-station deposition apparatus and method |
US20030235961A1 (en) | 2002-04-17 | 2003-12-25 | Applied Materials, Inc. | Cyclical sequential deposition of multicomponent films |
US6778762B1 (en) | 2002-04-17 | 2004-08-17 | Novellus Systems, Inc. | Sloped chamber top for substrate processing |
US20030213560A1 (en) | 2002-05-16 | 2003-11-20 | Yaxin Wang | Tandem wafer processing system and process |
KR100505043B1 (en) | 2002-05-25 | 2005-07-29 | 삼성전자주식회사 | Method for forming a capacitor |
US7081409B2 (en) | 2002-07-17 | 2006-07-25 | Samsung Electronics Co., Ltd. | Methods of producing integrated circuit devices utilizing tantalum amine derivatives |
US7524374B2 (en) * | 2002-07-17 | 2009-04-28 | Applied Materials, Inc. | Method and apparatus for generating a precursor for a semiconductor processing system |
US7066194B2 (en) | 2002-07-19 | 2006-06-27 | Applied Materials, Inc. | Valve design and configuration for fast delivery system |
US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US7222636B2 (en) * | 2002-08-20 | 2007-05-29 | Applied Materials, Inc. | Electronically actuated valve |
US6946033B2 (en) | 2002-09-16 | 2005-09-20 | Applied Materials Inc. | Heated gas distribution plate for a processing chamber |
US20040065255A1 (en) * | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US20040069227A1 (en) | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US6905737B2 (en) * | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
US6716287B1 (en) * | 2002-10-18 | 2004-04-06 | Applied Materials Inc. | Processing chamber with flow-restricting ring |
US6994319B2 (en) * | 2003-01-29 | 2006-02-07 | Applied Materials, Inc. | Membrane gas valve for pulsing a gas |
US6818094B2 (en) | 2003-01-29 | 2004-11-16 | Applied Materials, Inc. | Reciprocating gas valve for pulsing a gas |
US6868859B2 (en) * | 2003-01-29 | 2005-03-22 | Applied Materials, Inc. | Rotary gas valve for pulsing a gas |
US7442415B2 (en) | 2003-04-11 | 2008-10-28 | Sharp Laboratories Of America, Inc. | Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films |
US20050070126A1 (en) * | 2003-04-21 | 2005-03-31 | Yoshihide Senzaki | System and method for forming multi-component dielectric films |
TW200506093A (en) * | 2003-04-21 | 2005-02-16 | Aviza Tech Inc | System and method for forming multi-component films |
KR101104058B1 (en) | 2003-05-27 | 2012-01-06 | 어플라이드 머티어리얼스, 인코포레이티드 | Method and apparatus for generating a precursor for a semiconductor processing system |
US6911093B2 (en) | 2003-06-02 | 2005-06-28 | Lsi Logic Corporation | Lid liner for chemical vapor deposition chamber |
US6881437B2 (en) * | 2003-06-16 | 2005-04-19 | Blue29 Llc | Methods and system for processing a microelectronic topography |
US8152922B2 (en) * | 2003-08-29 | 2012-04-10 | Asm America, Inc. | Gas mixer and manifold assembly for ALD reactor |
US7408225B2 (en) | 2003-10-09 | 2008-08-05 | Asm Japan K.K. | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
US8536492B2 (en) * | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US20050104142A1 (en) * | 2003-11-13 | 2005-05-19 | Vijav Narayanan | CVD tantalum compounds for FET get electrodes |
US20050153571A1 (en) | 2003-11-17 | 2005-07-14 | Yoshihide Senzaki | Nitridation of high-k dielectric films |
US6983892B2 (en) * | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US20060156979A1 (en) | 2004-11-22 | 2006-07-20 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
US7464917B2 (en) * | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
TW200737307A (en) * | 2005-11-04 | 2007-10-01 | Applied Materials Inc | Apparatus and process for plasma-enhanced atomic layer deposition |
US7562672B2 (en) | 2006-03-30 | 2009-07-21 | Applied Materials, Inc. | Chemical delivery apparatus for CVD or ALD |
US7978964B2 (en) | 2006-04-27 | 2011-07-12 | Applied Materials, Inc. | Substrate processing chamber with dielectric barrier discharge lamp assembly |
US20080206987A1 (en) * | 2007-01-29 | 2008-08-28 | Gelatos Avgerinos V | Process for tungsten nitride deposition by a temperature controlled lid assembly |
-
2008
- 2008-01-29 US US12/021,798 patent/US20080206987A1/en not_active Abandoned
- 2008-01-29 US US12/021,825 patent/US8821637B2/en not_active Expired - Fee Related
Patent Citations (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5294286A (en) * | 1984-07-26 | 1994-03-15 | Research Development Corporation Of Japan | Process for forming a thin film of silicon |
US4806321A (en) * | 1984-07-26 | 1989-02-21 | Research Development Corporation Of Japan | Use of infrared radiation and an ellipsoidal reflection mirror |
US5882165A (en) * | 1986-12-19 | 1999-03-16 | Applied Materials, Inc. | Multiple chamber integrated process system |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4892751A (en) * | 1987-01-19 | 1990-01-09 | Hitachi, Ltd. | Method of and apparatus for forming a thin film |
US4813846A (en) * | 1987-02-13 | 1989-03-21 | Leybold-Heraeus Gmbh | Inserting device for vacuum apparatus |
US4993357A (en) * | 1987-12-23 | 1991-02-19 | Cs Halbleiter -Und Solartechnologie Gmbh | Apparatus for atomic layer epitaxial growth |
US5484664A (en) * | 1988-04-27 | 1996-01-16 | Fujitsu Limited | Hetero-epitaxially grown compound semiconductor substrate |
US5186718A (en) * | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
US5290748A (en) * | 1990-01-16 | 1994-03-01 | Neste Oy | Polymerization catalyst for olefines |
US5296403A (en) * | 1990-01-31 | 1994-03-22 | Research Development Corp. Of Japan | Method of manufacturing a static induction field-effect transistor |
US5082798A (en) * | 1990-04-18 | 1992-01-21 | Mitsubishi Denki Kabushiki Kaisha | Crystal growth method |
US5091320A (en) * | 1990-06-15 | 1992-02-25 | Bell Communications Research, Inc. | Ellipsometric control of material growth |
US5281274A (en) * | 1990-06-22 | 1994-01-25 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors |
US5483919A (en) * | 1990-08-31 | 1996-01-16 | Nippon Telegraph And Telephone Corporation | Atomic layer epitaxy method and apparatus |
US5085885A (en) * | 1990-09-10 | 1992-02-04 | University Of Delaware | Plasma-induced, in-situ generation, transport and use or collection of reactive precursors |
US5286296A (en) * | 1991-01-10 | 1994-02-15 | Sony Corporation | Multi-chamber wafer process equipment having plural, physically communicating transfer means |
US5705224A (en) * | 1991-03-20 | 1998-01-06 | Kokusai Electric Co., Ltd. | Vapor depositing method |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
US5395791A (en) * | 1992-05-22 | 1995-03-07 | Minnesota Mining And Manufacturing Company | Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy |
US5278435A (en) * | 1992-06-08 | 1994-01-11 | Apa Optics, Inc. | High responsivity ultraviolet gallium nitride detector |
US5601651A (en) * | 1992-09-17 | 1997-02-11 | Fujitsu Limited | Flow control valve for use in fabrication of semiconductor devices |
US5856219A (en) * | 1992-12-02 | 1999-01-05 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a high-density dynamic random-access memory |
US5730802A (en) * | 1994-05-20 | 1998-03-24 | Sharp Kabushiki Kaisha | Vapor growth apparatus and vapor growth method capable of growing good productivity |
US5866213A (en) * | 1994-06-03 | 1999-02-02 | Tokyo Electron Limited | Method for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
US5707880A (en) * | 1994-08-19 | 1998-01-13 | General Electric Company | Hermetically sealed radiation imager |
US5730801A (en) * | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US5855680A (en) * | 1994-11-28 | 1999-01-05 | Neste Oy | Apparatus for growing thin films |
US6015590A (en) * | 1994-11-28 | 2000-01-18 | Neste Oy | Method for growing thin films |
US5711811A (en) * | 1994-11-28 | 1998-01-27 | Mikrokemia Oy | Method and equipment for growing thin films |
US5609689A (en) * | 1995-06-09 | 1997-03-11 | Tokyo Electron Limited | Vacuum process apparaus |
US5733816A (en) * | 1995-12-13 | 1998-03-31 | Micron Technology, Inc. | Method for depositing a tungsten layer on silicon |
US5858102A (en) * | 1996-07-29 | 1999-01-12 | Tsai; Charles Su-Chang | Apparatus of chemical vapor for producing layer variation by planetary susceptor rotation |
US6342277B1 (en) * | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
US6036773A (en) * | 1996-08-21 | 2000-03-14 | Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry | Method for growing Group III atomic layer |
US6335280B1 (en) * | 1997-01-13 | 2002-01-01 | Asm America, Inc. | Tungsten silicide deposition process |
US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
US5855675A (en) * | 1997-03-03 | 1999-01-05 | Genus, Inc. | Multipurpose processing chamber for chemical vapor deposition processes |
US5866795A (en) * | 1997-03-17 | 1999-02-02 | Applied Materials, Inc. | Liquid flow rate estimation and verification by direct liquid measurement |
US5882413A (en) * | 1997-07-11 | 1999-03-16 | Brooks Automation, Inc. | Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6348376B2 (en) * | 1997-09-29 | 2002-02-19 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same |
US6838376B2 (en) * | 1997-11-05 | 2005-01-04 | Tokyo Electron Limited | Method of forming semiconductor wiring structures |
US6174809B1 (en) * | 1997-12-31 | 2001-01-16 | Samsung Electronics, Co., Ltd. | Method for forming metal layer using atomic layer deposition |
US6015917A (en) * | 1998-01-23 | 2000-01-18 | Advanced Technology Materials, Inc. | Tantalum amide precursors for deposition of tantalum nitride on a substrate |
US6025627A (en) * | 1998-05-29 | 2000-02-15 | Micron Technology, Inc. | Alternate method and structure for improved floating gate tunneling devices |
US6524952B1 (en) * | 1999-06-25 | 2003-02-25 | Applied Materials, Inc. | Method of forming a titanium silicide layer on a substrate |
US20020009544A1 (en) * | 1999-08-20 | 2002-01-24 | Mcfeely F. Read | Delivery systems for gases for gases via the sublimation of solid precursors |
US6511539B1 (en) * | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
US20030031807A1 (en) * | 1999-10-15 | 2003-02-13 | Kai-Erik Elers | Deposition of transition metal carbides |
US20020000598A1 (en) * | 1999-12-08 | 2002-01-03 | Sang-Bom Kang | Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors |
US20020020869A1 (en) * | 1999-12-22 | 2002-02-21 | Ki-Seon Park | Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof |
US20030032281A1 (en) * | 2000-03-07 | 2003-02-13 | Werkhoven Christiaan J. | Graded thin films |
US20020016084A1 (en) * | 2000-04-28 | 2002-02-07 | Todd Michael A. | CVD syntheses of silicon nitride materials |
US6686271B2 (en) * | 2000-05-15 | 2004-02-03 | Asm International N.V. | Protective layers prior to alternating layer deposition |
US20020004293A1 (en) * | 2000-05-15 | 2002-01-10 | Soininen Pekka J. | Method of growing electrical conductors |
US20040009307A1 (en) * | 2000-06-08 | 2004-01-15 | Won-Yong Koh | Thin film forming method |
US20020019121A1 (en) * | 2000-06-20 | 2002-02-14 | Pyo Sung Gyu | Method of forming a metal wiring in a semiconductor device |
US20040018723A1 (en) * | 2000-06-27 | 2004-01-29 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6855368B1 (en) * | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
US20060009034A1 (en) * | 2000-06-28 | 2006-01-12 | Lai Ken K | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US20020007790A1 (en) * | 2000-07-22 | 2002-01-24 | Park Young-Hoon | Atomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method |
US20020021544A1 (en) * | 2000-08-11 | 2002-02-21 | Hag-Ju Cho | Integrated circuit devices having dielectric regions protected with multi-layer insulation structures and methods of fabricating same |
US20060030148A1 (en) * | 2001-02-02 | 2006-02-09 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US20050031786A1 (en) * | 2001-05-22 | 2005-02-10 | Novellus Systems, Inc. | Method for reducing tungsten film roughness and improving step coverage |
US20030013320A1 (en) * | 2001-05-31 | 2003-01-16 | Samsung Electronics Co., Ltd. | Method of forming a thin film using atomic layer deposition |
US20070009658A1 (en) * | 2001-07-13 | 2007-01-11 | Yoo Jong H | Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process |
US20040014315A1 (en) * | 2001-07-16 | 2004-01-22 | Applied Materials, Inc. | Formation of composite tungsten films |
US20080014724A1 (en) * | 2001-07-16 | 2008-01-17 | Byun Jeong S | Methods for depositing tungsten after surface treatment |
US20030013300A1 (en) * | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
US20030017697A1 (en) * | 2001-07-19 | 2003-01-23 | Kyung-In Choi | Methods of forming metal layers using metallic precursors |
US20030022487A1 (en) * | 2001-07-25 | 2003-01-30 | Applied Materials, Inc. | Barrier formation using novel sputter-deposition method |
US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US20030038369A1 (en) * | 2001-08-22 | 2003-02-27 | Nace Layadi | Method for reducing a metal seam in an interconnect structure and a device manufactured thereby |
US20060040052A1 (en) * | 2001-10-10 | 2006-02-23 | Hongbin Fang | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US20070026147A1 (en) * | 2001-10-26 | 2007-02-01 | Ling Chen | Enhanced copper growth with ultrathin barrier layer for high performance interconnects |
US20070003698A1 (en) * | 2001-10-26 | 2007-01-04 | Ling Chen | Enhanced copper growth with ultrathin barrier layer for high performance interconnects |
US6998014B2 (en) * | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US20070020924A1 (en) * | 2002-02-26 | 2007-01-25 | Shulin Wang | Tungsten nitride atomic layer deposition processes |
US20050008779A1 (en) * | 2002-04-08 | 2005-01-13 | Yang Michael Xi | Multiple precursor cyclical depositon system |
US6846516B2 (en) * | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US20080014352A1 (en) * | 2002-04-16 | 2008-01-17 | Ming Xi | System and method for forming an integrated barrier layer |
US20040005749A1 (en) * | 2002-07-02 | 2004-01-08 | Choi Gil-Heyun | Methods of forming dual gate semiconductor devices having a metal nitride layer |
US20040018304A1 (en) * | 2002-07-10 | 2004-01-29 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US6838125B2 (en) * | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US20040013803A1 (en) * | 2002-07-16 | 2004-01-22 | Applied Materials, Inc. | Formation of titanium nitride films using a cyclical deposition process |
US20040013577A1 (en) * | 2002-07-17 | 2004-01-22 | Seshadri Ganguli | Method and apparatus for providing gas to a processing chamber |
US20040011504A1 (en) * | 2002-07-17 | 2004-01-22 | Ku Vincent W. | Method and apparatus for gas temperature control in a semiconductor processing system |
US20040014320A1 (en) * | 2002-07-17 | 2004-01-22 | Applied Materials, Inc. | Method and apparatus of generating PDMAT precursor |
US20040018747A1 (en) * | 2002-07-20 | 2004-01-29 | Lee Jung-Hyun | Deposition method of a dielectric layer |
US20040015300A1 (en) * | 2002-07-22 | 2004-01-22 | Seshadri Ganguli | Method and apparatus for monitoring solid precursor delivery |
US20050006799A1 (en) * | 2002-07-23 | 2005-01-13 | Gregg John N. | Method and apparatus to help promote contact of gas with vaporized material |
US20040025370A1 (en) * | 2002-07-29 | 2004-02-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
US20040033698A1 (en) * | 2002-08-17 | 2004-02-19 | Lee Yun-Jung | Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same |
US20080008823A1 (en) * | 2003-01-07 | 2008-01-10 | Ling Chen | Deposition processes for tungsten-containing barrier layers |
US7005372B2 (en) * | 2003-01-21 | 2006-02-28 | Novellus Systems, Inc. | Deposition of tungsten nitride |
US20050009325A1 (en) * | 2003-06-18 | 2005-01-13 | Hua Chung | Atomic layer deposition of barrier materials |
US20060024959A1 (en) * | 2004-07-30 | 2006-02-02 | Applied Materials, Inc. | Thin tungsten silicide layer deposition and gate metal integration |
US20070020890A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Method and apparatus for semiconductor processing |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
US7745333B2 (en) | 2000-06-28 | 2010-06-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US7695563B2 (en) | 2001-07-13 | 2010-04-13 | Applied Materials, Inc. | Pulsed deposition process for tungsten nucleation |
US7745329B2 (en) | 2002-02-26 | 2010-06-29 | Applied Materials, Inc. | Tungsten nitride atomic layer deposition processes |
US7867914B2 (en) | 2002-04-16 | 2011-01-11 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
US8821637B2 (en) * | 2007-01-29 | 2014-09-02 | Applied Materials, Inc. | Temperature controlled lid assembly for tungsten nitride deposition |
US9175394B2 (en) * | 2010-03-12 | 2015-11-03 | Applied Materials, Inc. | Atomic layer deposition chamber with multi inject |
US20110223334A1 (en) * | 2010-03-12 | 2011-09-15 | Applied Materials, Inc. | Atomic layer deposition chamber with multi inject |
US8617985B2 (en) | 2011-10-28 | 2013-12-31 | Applied Materials, Inc. | High temperature tungsten metallization process |
US8835311B2 (en) | 2011-10-28 | 2014-09-16 | Applied Materials, Inc. | High temperature tungsten metallization process |
US9613799B2 (en) | 2012-06-01 | 2017-04-04 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
US20130323435A1 (en) * | 2012-06-01 | 2013-12-05 | Air Products And Chemicals, Inc. | Organoaminodisilane precursors and methods for depositing films comprising same |
US9337018B2 (en) * | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
TWI673386B (en) * | 2012-10-11 | 2019-10-01 | 美商應用材料股份有限公司 | Tungsten growth modulation by controlling surface composition |
US9169556B2 (en) * | 2012-10-11 | 2015-10-27 | Applied Materials, Inc. | Tungsten growth modulation by controlling surface composition |
KR20150063562A (en) * | 2012-10-11 | 2015-06-09 | 어플라이드 머티어리얼스, 인코포레이티드 | Tungsten growth modulation by controlling surface composition |
US20140106083A1 (en) * | 2012-10-11 | 2014-04-17 | Applied Materials, Inc. | Tungsten growth modulation by controlling surface composition |
KR102197537B1 (en) | 2012-10-11 | 2020-12-31 | 어플라이드 머티어리얼스, 인코포레이티드 | Tungsten growth modulation by controlling surface composition |
TWI623643B (en) * | 2012-10-11 | 2018-05-11 | 應用材料股份有限公司 | Tungsten growth modulation by controlling surface composition |
US9443728B2 (en) * | 2013-08-16 | 2016-09-13 | Applied Materials, Inc. | Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing |
US20150050753A1 (en) * | 2013-08-16 | 2015-02-19 | Applied Materials, Inc. | Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing |
US20160312360A1 (en) * | 2015-04-22 | 2016-10-27 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
US11932939B2 (en) | 2015-04-22 | 2024-03-19 | Applied Materials, Inc. | Lids and lid assembly kits for atomic layer deposition chambers |
US11384432B2 (en) * | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
US10633737B2 (en) | 2015-05-26 | 2020-04-28 | The Japan Steel Works, Ltd. | Device for atomic layer deposition |
US10508338B2 (en) * | 2015-05-26 | 2019-12-17 | The Japan Steel Works, Ltd. | Device for atomic layer deposition |
US10604838B2 (en) | 2015-05-26 | 2020-03-31 | The Japan Steel Works, Ltd. | Apparatus for atomic layer deposition and exhaust unit for apparatus for atomic layer deposition |
US10780447B2 (en) * | 2016-04-26 | 2020-09-22 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
US20170304849A1 (en) * | 2016-04-26 | 2017-10-26 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
US20180163306A1 (en) * | 2016-12-12 | 2018-06-14 | Applied Materials, Inc. | UHV In-Situ Cryo-Cool Chamber |
US11802340B2 (en) * | 2016-12-12 | 2023-10-31 | Applied Materials, Inc. | UHV in-situ cryo-cool chamber |
WO2020081600A1 (en) * | 2018-10-18 | 2020-04-23 | Applied Materials, Inc. | Load lock body portions, load lock apparatus, and methods for manufacturing the same |
US10636705B1 (en) | 2018-11-29 | 2020-04-28 | Applied Materials, Inc. | High pressure annealing of metal gate structures |
US11732355B2 (en) * | 2018-12-20 | 2023-08-22 | Applied Materials, Inc. | Method and apparatus for supplying improved gas flow to a processing volume of a processing chamber |
CN113366144A (en) * | 2019-01-28 | 2021-09-07 | 朗姆研究公司 | Deposition of metal films |
US11821071B2 (en) | 2019-03-11 | 2023-11-21 | Lam Research Corporation | Precursors for deposition of molybdenum-containing films |
US11970776B2 (en) | 2020-01-27 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition of metal films |
Also Published As
Publication number | Publication date |
---|---|
US20080202425A1 (en) | 2008-08-28 |
US8821637B2 (en) | 2014-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8821637B2 (en) | Temperature controlled lid assembly for tungsten nitride deposition | |
US11932939B2 (en) | Lids and lid assembly kits for atomic layer deposition chambers | |
US6364954B2 (en) | High temperature chemical vapor deposition chamber | |
US10487399B2 (en) | Atomic layer deposition chamber with counter-flow multi inject | |
US9175394B2 (en) | Atomic layer deposition chamber with multi inject | |
US4796562A (en) | Rapid thermal cvd apparatus | |
US6645884B1 (en) | Method of forming a silicon nitride layer on a substrate | |
US7175713B2 (en) | Apparatus for cyclical deposition of thin films | |
US4817558A (en) | Thin-film depositing apparatus | |
US7695563B2 (en) | Pulsed deposition process for tungsten nucleation | |
US6924223B2 (en) | Method of forming a metal layer using an intermittent precursor gas flow process | |
KR101201964B1 (en) | Epitaxial deposition process and apparatus | |
US20080099147A1 (en) | Temperature controlled multi-gas distribution assembly | |
TWI387667B (en) | An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber | |
US20080092812A1 (en) | Methods and Apparatuses for Depositing Uniform Layers | |
US20030116087A1 (en) | Chamber hardware design for titanium nitride atomic layer deposition | |
JP2004533722A (en) | Doped silicon deposition process in a resistively heated single wafer chamber | |
JP2004076023A (en) | Gas treatment device and gas treatment method | |
JPH036224B2 (en) | ||
JP2000150498A (en) | Chemical vapor phase growth device and thin film forming method | |
KR101134713B1 (en) | Method for depositing metal layers using sequential flow deposition | |
US6045619A (en) | Horizontal-type silicon-nitride furnace |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC.,CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:GELATOS, AVGERINOS V.;LEE, SANG-HYEOB;YUANG, XIAOXIONG;AND OTHERS;SIGNING DATES FROM 20080418 TO 20080502;REEL/FRAME:021022/0849 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |