US20080144043A1 - Apparatus for wavefront detection - Google Patents

Apparatus for wavefront detection Download PDF

Info

Publication number
US20080144043A1
US20080144043A1 US12/032,623 US3262308A US2008144043A1 US 20080144043 A1 US20080144043 A1 US 20080144043A1 US 3262308 A US3262308 A US 3262308A US 2008144043 A1 US2008144043 A1 US 2008144043A1
Authority
US
United States
Prior art keywords
wavefront
diffraction grating
arrangement according
projection objective
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/032,623
Inventor
Ulrich Wegmann
Helmut Haidner
Martin Schriever
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to US12/032,623 priority Critical patent/US20080144043A1/en
Publication of US20080144043A1 publication Critical patent/US20080144043A1/en
Assigned to CARL ZEISS SMT AG reassignment CARL ZEISS SMT AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FREISCHLAD, KLAUS
Assigned to CARL ZEISS SMT GMBH reassignment CARL ZEISS SMT GMBH A MODIFYING CONVERSION Assignors: CARL ZEISS SMT AG
Abandoned legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components
    • G03F7/706Aberration measurement
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods

Definitions

  • the invention relates to an apparatus for the detection of wavefronts of electromagnetic radiation, in particular visible and ultraviolet light and soft X-rays, and also to a process for wavefront detection, and a stepper or scanner for microlithography with such an apparatus of the concerned category, for wavefront detection.
  • An apparatus of the concerned category, for wavefront detection is known from “Phase Measuring Ronchi Test”, by Katsuyuki Omura et al. (pages 523-528 in APPLIED OPTICS, Vol. 27, No. 3, February 1988).
  • a monochromatic point light source of a He—Ne laser produces a wavefront, which passes through a collimator and a test lens and thereafter strikes a diffraction grating known as a Ronchi grating.
  • the collimator transforms the wavefront emerging from the point light source into a plane wave striking the test lens, the diffraction grating being situated in the image-side focal plane of the test lens.
  • the diffraction pattern or interferogram produced by the Ronchi grating is recorded by a spatially resolving detector including a TV camera, and is used thereon for the detection of the wavefront leaving the optical system.
  • DD 0154 239 also discloses an apparatus for wavefront detection of the concerned category termed a shearing interferometer, for the interferometric testing of objectives.
  • the diffraction grating is situated outside the focal plane of the objective being tested.
  • a grating shear interferometer for wavefront detection of the concerned category in which the light of a plane wave to be investigated falls on two phase gratings, one behind the other, and is then sensed by a CCD camera for wavefront analysis.
  • a further apparatus for wavefront detection according to the preamble of claim 1 is known from the article “Evaluation of Large Aberrations Using a Lateral-Shear Interferometer Having Variable Shear” by M. P. Rimmer et al., in APPLIED OPTICS, Vol. 14, No. 1, January 1975, pages 142-150.
  • the optical system connected between the wavefront source and the diffraction grating is a curved mirror in this case.
  • the wavefronts diffracted by the diffraction grating are collimated by an imaging lens and form, on a rotating matt disk arranged in the focal plane of the imaging lens, a shear interferogram which is recorded by a CCD detector and is then used for testing the test lens.
  • the invention has as its object to provide an improved apparatus of the concerned category for wavefront detection.
  • a wavefront source for production of a wavefront, a diffraction grating following the wavefront source, and a spatially resolving detector following the diffraction grating, wherein the wavefront source has a two-dimensional structure.
  • the spatial coherence of the radiation can then be adjusted by means of the two-dimensional structure of the wavefront source such that the wavefronts transformed by the optical system can be measured with high accuracy.
  • the apparatus for wavefront detection according to the invention is suitable for both coherent and incoherent radiation from the infrared as far as the X-ray region.
  • a large spectral region is already accessible by the use of conventional CCD camera technique for the spatially resolving detector.
  • a photoemission electron microscope (PEEM) can also be used as the spatially resolving detector.
  • the spatially resolving detector may also comprise a sensor constructed with CMOS technique which is characterized by low power consumption and allows the integration of a digital-analog converter into the detector.
  • a sensor using the CID (Charge Injection Device) technique is also possible.
  • the wavefront source for very short wavelengths extending into the X-ray region, it can be advantageous to construct the wavefront source as a reflecting element, e.g., as a reflection mask.
  • the wavefront source includes a perforated mask, whence the two-dimensional structure of the wavefront source has high contrast.
  • a perforated mask can in particular have plural openings arranged in fourfold or threefold symmetry.
  • the perforated mask can then be arranged between an exit surface of a light guide and the optical system.
  • a compact wavefront source of high luminance is obtained when the perforated mask is connected to the light guide.
  • the wave front can be measured with finite-finite imaging of the optical system, while maintaining the exact distance between conjugate points of the optical system.
  • the quality of an optical system can thus be tested in its specific field of use. Since this is possible without inserting additional components, for example collimator lenses, into the beam path of the optical system between the object and the image, the invention enables the calibration of such additional components to be dispensed with.
  • a displacement module is associated with a light guide—perforated mask combination, and displaces the perforated mask together with the exit surface of the light guide in the object plane.
  • the imaging quality of the optical system for a large imaging field can be measured by means of the displacement of the wavefront source which is possible in this manner.
  • the light guide can be a multimode light guide, in order to also be able to test the imaging quality of the optical system when using white light, that is, a mixture of wavelengths, or multimode lasers of short coherence length (a few tens of ⁇ m).
  • Light guide is of course intended to mean a radiation guide which is suitable over the visible region of the electromagnetic radiation and beyond.
  • the diffraction grating is constituted in dependence on the structure of the wavefront source such that only given diffraction orders contribute to the interference at the diffraction grating.
  • the diffraction grating can be a phase grating or an amplitude grating, or any other suitable type of diffraction grating, e.g., a gray value grating produced by dithering or else a reflecting grating, which is of particular use for very short wavelengths.
  • the diffraction grating has a respective diffracting periodic structure for different directions. Phase gradients in more than one direction can thereby be determined from a single interferogram recorded by the spatially resolving detector.
  • the diffraction grating can also have periodicity directions including angles of, e.g., 45°, 60°, or 120°.
  • a diffraction grating constituted as a triangle grating with periodicity directions respectively pairwise including an angle of 120°, or a triangle grating with 45° and 90°, i.e., with equilateral and right-angled triangles more than two periodicity or displacement directions result.
  • the redundancy resulting therefrom can be used for increasing the measurement accuracy by compensating calculation.
  • Such diffraction gratings with several periodicity directions e.g., a sine grating periodic in the X and Y directions, can be suitably embodied as phase gratings in view of suppression of undesired diffraction orders and of their production.
  • the diffraction grating includes a grating having a respective diffracting periodic structure in different periodicity directions, and a line grating coplanar with this, e.g., a line grating arranged in the plane of the diffraction grating and connected to the diffraction grating.
  • a translation module to be associated with the diffraction grating, for displacement of the diffraction grating in the two mutually orthogonal directions.
  • the contrast of one of the orthogonal interference systems can then be suppressed by means of a movement of the diffraction grating by an integral multiple of the respective grating period.
  • the diffraction grating can also be a line diffraction grating, a rotation module then being advantageously associated with the diffraction grating for rotating the diffraction grating through 90° in order to be able to detect both orthogonal interference systems for a complete wavefront reconstruction.
  • the detector can be suitably matched to the interferogram by means of an imaging system arranged between the diffraction grating and the detector. It is then advantageous for the displacement module associated with the light guide to also displace the imaging system parallel to the image plane when the exit surface of the light guide is displaced.
  • the lateral shearing of the wavefronts caused by the diffraction grating is transmitted to the detector, constant for all aperture angles.
  • the constancy of the radiation source or wavefront source can be monitored.
  • a reference light guide can then transport the radiation fraction coupled-out by the first beamsplitter to the second beamsplitter.
  • a portion of the illuminating radiation can also be deflected to the deflector past the diffraction grating, e.g. through a recess of the diffraction grating.
  • the basic object is attained by a diffraction grating through which a wavefront passes, and a spatially resolving detector following the diffraction grating, wherein the detector is curved at least regionally toward the diffraction grating.
  • a detector which is curved toward the diffraction grating can detect the interferogram produced by the diffraction grating in a manner which is advantageous for the subsequent use of the interferogram.
  • the lateral shearing, produced by the diffraction grating, of the wavefronts can be transferred, constant or undistorted, to the detector independently of the diffraction angle. This gives a considerably simplified reconstruction of the wavefront topography from the shear interferograms.
  • shear interferogram depends on the phase displacement between the diffracted wavefront and the undiffracted wavefront, and this phase displacement is constant on a spherical surface concentric with the origin of the undiffracted wavefront.
  • the detector includes an at least regionally spherical secondary radiating surface arranged between the diffraction grating and the radiation-sensitive sensor surface
  • conventional image sensors with a planar radiation-sensitive surface for example, TV cameras, CCD sensors, PEEM, and the like, can be used for an apparatus according to the invention.
  • Suitable secondary radiating surfaces can for example be constituted as a ground glass screen or as a fluorescent layer.
  • the detector itself can be adjusted to the respective measurement wavelength within a large wavelength range, with the use of commercially available radiation sensitive sensor surfaces which are optimized for the visible wavelength region.
  • the detector includes on the diffraction grating side a number of light guides, the ends of whose light guides on the diffraction grating side are arranged on a spherical shell. This can be effected, for example, by polishing a concave spherical surface in the end of an imaging optical fiber bundle or in an optical fiber plate.
  • the plural light guides arranged between the diffraction grating and the detector can, as an image-preserving optical fiber bundle, transport the interferogram to a relatively freely positionable sensor surface.
  • the diffraction grating can thereby be arranged within a vacuum, for example, and an image sensor acting as a heat source, for example a TV camera, outside the vacuum.
  • the light guide ends remote from the diffraction grating can be directly associated with the radiation-sensitive sensor surface.
  • the fiber bundle end can be placed in direct contact with a camera chip.
  • the detector can also include a preferably telecentric imaging optical system. Imaging of the interferogram onto the radiation-sensitive surface in a manner suited to the dimensions of the sensor surface is thereby possible.
  • the basic object is attained by a diffraction grating holder that holds the diffraction grating and has a secondary radiator source.
  • a grating holder having both the diffraction grating and also a secondary radiator surface, the apparatus for wavefront detection can thereby be particularly compact. It is thereby possible to integrate an apparatus for wavefront detection according to the invention into already existing optical imaging devices, for operational monitoring of the imaging quality.
  • a hemisphere which is arranged between the diffraction grating and the radiation-sensitive sensor surface and supports the diffraction grating on its planar surface.
  • the already mentioned advantages of spherical sensor surfaces can thereby be attained in a compact and robust constructional form.
  • the spherical surface region of the hemisphere is then preferably constituted as the secondary radiator surface.
  • This hemispherical embodiment of the diffraction grating holder can be combined, in a manner which is efficient as regards production technology, with an optical fiber bundle and a secondary radiating surface if the optical fiber bundle ends on the diffraction grating side are connected to the spherical surface region of the hemisphere with a frequency-converting cement.
  • a wavefront module is arranged in front of the diffraction grating, and an optical system is arranged between the wavefront module and the diffraction grating.
  • the optical system can thereby be investigated with high accuracy, with a diffraction grating and detector unit adjusted to the wavefront module.
  • the optical system can be investigated with respect to its object field at plural field points simultaneously, i.e., in parallel. A considerable reduction of the time required for the investigation of an optical system is possible by means of such a simultaneous measurement of the wavefronts at many field points.
  • each wavefront source has a perforated mask
  • the structure of the wavefront sources can be adjusted to the imaging scale of the optical system and the diffraction grating such that only given diffraction orders contribute to the interference at the diffraction grating, whereby the evaluation of the interferogram becomes particularly efficient.
  • a perforated mask gives high contrast to the two-dimensional structure of the wavefront source.
  • the perforated mask can have plural openings.
  • a refractive or diffractive focusing optics is associated with each wavefront source and concentrates incident illuminating light onto the wavefront source.
  • a standard illuminating device of the optical system usually illuminating a relatively large object field, can be used for the wavefront module in this manner.
  • each wavefront source pluralitural light guides are advantageously associated with each wavefront source.
  • the interferograms of the individual wavefront sources can thereby be satisfactorily imaged on a respectively allocated region of the radiation-sensitive sensor surface.
  • the apparatus according to the invention is particularly suitable, because of its compactness and evaluation efficiency and accuracy, for the testing of projection objectives for microlithography.
  • the invention also relates to a process for wavefront detection comprising the steps of producing a wavefront by a wavefront source, producing an interferogram with the wavefront and with a diffraction grating having a diffracting periodic structure respectively in different periodicity directions, recording an image of the interferogram with a radiation-sensitive detector, and displacing the wavefront source or the diffraction grating in one periodicity direction by an integral multiple of a corresponding grating period.
  • the contrast of one of the orthogonal interference systems can be suppressed, and the evaluation of the interferogram considerably simplified, by the displacement of the wavefront source or of the diffraction grating in one of its periodicity directions by an integral multiple of the corresponding grating period.
  • the displacement of the wavefront source or of the diffraction grating can then take place during the image recording time of the detector, typically 30 milliseconds.
  • the displacement path of the diffraction grating is then typically 6-18 ⁇ m.
  • plural interferogram images can also be recorded during the displacement of the wavefront source or of the diffraction grating, the plural interferogram images then being used for wavefront detection.
  • a superposition of the individual interferogram images then again corresponds to the abovementioned image integration during the complete diffraction grating displacement.
  • phase modulation by a reciprocating motion of the diffraction grating with a frequency ⁇ and by adjoining narrow-band filters, known, for example, from DE 195 38 747 A1, can be further superposed on this displacement, according to the invention, of the diffraction grating in one of its periodicity directions by an integral multiple of the corresponding grating period.
  • the invention furthermore also relates to a process comprising the steps of producing a wavefront by a wavefront source, producing an interferogram with the wavefront and with a diffraction grating having a diffracting periodic structure respectively in different periodicity directions, and displacing the wavefront source or the diffraction grating by a fraction of the corresponding grating period, and detecting the resulting interferogram, repeating the displacement step, and averaging the interferograms detected in the individual displacement steps for the wavefront detection.
  • the displacing step comprises displacing the wavefront source or the diffraction grating in a direction defined by vectorial superposition of the different periodicity directions.
  • the total amount of displacement of the wavefront source or the diffraction grating is smaller than or equal to half of the corresponding grating period.
  • interfering signals are superposed on the desired signal in the interferogram.
  • These interfering signals can originate from production errors or imperfections of the diffraction grating or of the wavefront source, per se from the smallest maladjustments of the components, from an imperfect illumination of the wavefront source, or from ghost images or ghost interferograms due to possible back-reflections from the optical system and from the apparatus for wavefront detection (e.g., from the detector surface, grating back side, etc.).
  • These interferences are typically periodically superposed on the desired signal, i.e., they vary periodically around the correct measurement value. Their frequency, phase position and amplitude can be detected by variation of the initial phase (phase position of the grating relative to the wavefront source).
  • phase position of the wavefront source e.g., by displacement of the illumination mask with respect to the stationary diffraction grating
  • distinct amplitudes i.e. large changes of the interfering signals
  • the interference signals have a dominant contribution to the second harmonic of the desired signal, and thus run through two oscillation periods when the initial phase is varied by a period of the grating or of the wavefront source.
  • the invention furthermore relates to a stepper or scanner for microlithography, with an apparatus for wavefront detection described herein-above.
  • Such a stepper/scanner can be monitored in situ, i.e., at the place of production and during the production cycle, without great disturbance of the course of production, for its production quality, for example, for the adherence to tolerance limits for the respective image errors, if the wavefront module can be brought operationally into the object plane of the projection objective and removed from it and/or when the diffraction grating can be brought operationally into the object plane of the projection objective and removed from it.
  • stepper/scanner has an aberration control circuit, which can act on the projection objective by means of active or manipulator elements.
  • a particular suitability of the apparatus for wavefront detection according to the invention in a stepper or scanner for microlithography is also based on the fact that it is suitable for both coherent and also incoherent radiation, from the infrared as far as the X-ray region, and also particularly for radiation sources of short coherence length such as a HBO lamp, an excimer laser or a synchrotron radiator. Production monitoring can also take place with the operating light source at the operating wavelength of the microlithography projection objective.
  • FIG. 1 is a diagram showing an embodiment of the apparatus for wavefront detection according to the invention
  • FIG. 2 is a plan view of the illumination mask of the wavefront source of FIG. 1 ;
  • FIG. 3 is a plan view of an alternative illumination mask
  • FIG. 4 is a diagram showing a further illumination mask, suitable for the wavefront source of FIG. 1 ;
  • FIG. 5 is a diagram showing yet another illumination mask, Suitable for the wavefront source of FIG. 1 ;
  • FIG. 6 is a diagram showing an embodiment of the illumination system and illumination mask
  • FIG. 7 is a diagram showing a further embodiment of the illumination system and illumination mask
  • FIG. 7 a is a diagram showing another embodiment of the illumination system and illumination mask comprising a stack of microlens plates and integrated gray filters for correcting the spatial intensity distribution;
  • FIG. 7 b is a schematic diagram of the transmission of the gray filter shown in FIG. 7 a as a function of the radial distance from the central axis of the gray filter;
  • FIG. 8 is a plan view showing the diffraction grating of the apparatus of FIG. 1 ;
  • FIG. 9 is a diagram showing a second diffraction grating usable for the apparatus of FIG. 1 ;
  • FIG. 11 is a diagram showing a third diffraction grating usable for the apparatus of FIG. 1 ;
  • FIG. 12 is a diagram showing a fourth diffraction grating usable for the apparatus of FIG. 1 ;
  • FIG. 12 is a diagram showing a further apparatus for wavefront detection according to the invention, constituted as a diffraction grating and detector unit;
  • FIG. 13 is a diagram showing a third apparatus for wavefront detection according to the invention, constituted as a diffraction grating and detector unit;
  • FIG. 14 is a diagram showing a fourth apparatus for wavefront detection according to the invention, constituted as a diffraction grating and detector unit;
  • FIG. 15 is a diagram showing an embodiment with plural parallel measurement channels
  • FIG. 16 is an enlarged sectional diagram of the wavefront module of the embodiment of FIG. 15 ;
  • FIG. 17 is a diagram showing an arrangement for microlithography with a multi-channel apparatus for wavefront detection.
  • FIG. 18 is a diagram showing an arrangement according to FIG. 17 , with an aberration control circuit.
  • An apparatus 1 for wavefront detection is shown schematically in a longitudinal section in FIG. 1 .
  • a wavefront source 7 arranged in an object plane 3 of an optical system 5 produces a wavefront.
  • the wavefronts 9 shown schematically as contour lines, emergent from the wavefront source 7 pass through the optical system 5 and are formed by the optical system 5 into emergent wavefronts 10 which then strike a diffraction grating 11 .
  • the optical system 5 whose optical axis 50 is parallel to a Z direction, includes two optical elements symbolized by double arrows, e.g., lenses 13 and 15 , and images the wavefront source 7 on the diffraction grating 11 , the diffraction grating 11 being situated in the image plane conjugate to the object plane 3 .
  • An aperture stop 17 of the optical system 5 can likewise be Recognized in FIG. 1 .
  • a spatially resolving detector 19 follows the diffraction grating 11 .
  • the detector 19 includes a radiation-sensitive sensor surface 20 , e.g., a CCD chip, and also an imaging system 22 arranged between the diffraction grating 11 and the sensor surface 20 and imaging on the sensor surface 20 the interferogram or shearing diagram produced by the diffraction grating 11 .
  • the imaging system 22 has a microscope objective 21 and further optical elements 23 and 25 and, together with the optical element 15 , images the aperture stop 17 onto the sensor surface 20 , as shown by the pupil beam path 27 .
  • the imaging system 22 is sine corrected, the quality of the sine correction of the microscope objective 21 being decisive for the constancy of the shear distance over the measured wavefront.
  • the wavefront source 7 includes a perforated mask 8 , shown in detail in FIG. 2 , installed at the output of a light guide 29 .
  • the light guide 29 is displaceable parallel to the object plane 3 in the X and/or Y direction by means of a displacement module 31 , as illustrated by the double arrow 33 and the dash-dot phantom diagrams 35 .
  • the detector 19 is also moved by the displacement module 31 in the X and/or Y direction simultaneously with the light guide 29 , for scanning the image field of the optical system 5 .
  • the diffraction grating 11 can be displaced by a translation module 37 in the image field of the optical system 5 , i.e. in the X direction and/or Y direction, in order to be able to suppress the contrast of one of the orthogonal interference systems of the diffraction grating 11 .
  • a first beamsplitter 45 is arranged between a radiation source 43 and the wavefront source 7 , for coupling-out a portion of the radiation supplying the wavefront source.
  • a reference light guide 49 conveys the radiation portion coupled-out by the first beamsplitter 45 to the second beamsplitter 47 .
  • the perforated mask 8 of the wavefront source 7 has a square opening 53 arranged centered on the optical axis 50 of the optical system 5 , and four openings 51 arranged around and spaced from the opening 53 and symmetrically with respect to the optical axis 50 .
  • FIG. 3 A further embodiment of a perforated mask suitable for the wavefront source 7 is shown in FIG. 3 .
  • This perforated mask 8 ′ includes a square opening 53 ′ likewise arranged centered on the optical axis 50 of the optical system 5 and four openings 51 ′ arranged adjoining the opening 53 ′ and symmetrically around the optical axis 50 .
  • the number of openings of a perforated mask according to the invention can also be greater than in FIGS. 2 and 3 , according to the case of application.
  • a perforated mask 8 ′ with rotationally symmetrical transmission distribution is shown in FIG. 4 ; in it, a central circular surface 54 and also an annular surface 56 are transparent, and complementary annular surfaces 52 are opaque.
  • An illumination mask 8 ′′′ with openings 57 is shown in FIG. 5 , and is constituted as equilateral triangles.
  • the illumination mask 8 ′′′ thus has a triangular symmetry and cooperates particularly advantageously with the diffraction grating of FIG. 10 .
  • FIGS. 6 and 7 show alternative embodiments of arrangements of illumination system and illumination masks.
  • FIG. 6 shows an expanding or focusing lens 30 arranged between a light guide fiber 29 ′ and a perforated mask 8 installed on a matt disk 6 .
  • Spatial coherence can be controlled by means of the matt disk 6 ; attention has to be paid to the illumination of the perforated mask 8 ideally being incoherent, in order to be able to form in a targeted manner the spatial coherence distribution due to the perforated mask geometry.
  • the illumination aperture can be matched to the aperture stop 17 by means of the lens 30 .
  • the aperture stop can thereby be completely illuminated, i.e., an insufficient filling of the aperture stop 17 can be avoided, even if the numerical aperture of the illumination fiber 29 ′ and of the optical system do not mutually correspond.
  • a microlens system 30 ′′ is provided in place of the expanding or focusing lens 30 ′.
  • the microlens system may comprise one or more microlens plates.
  • the microlens system may comprise a stack of two or more transparent plates 31 ′′ which are disposed successively when viewed in the radiation direction.
  • the plates may be manufactured from fused silica or calcium fluoride and one or more refractive or diffractive microlenses 32 ′′ may be formed on a plate e.g. by a lithographic manufacturing process.
  • the 7 a comprises two immediately adjacent lens plates 31 ′′ and is incorporated in a stack or optical elements, wherein the stack comprises a plane-parallel plate 34 ′′ with a matt disk or focusing disk 6 ′′ on the entrance side thereof and a plane-parallel plate 35 ′′ with a mask 8 ′′ on the exit side of the radiation.
  • Microlens systems or optical systems of this kind constructed with plates can be manufactured at low cost and are compact in size.
  • the microlenses are easily adjustable by adjusting the plates relative to each other.
  • a parallel arrangement of lenses or lens systems is preferred, e.g. by providing a one-dimensional or two-dimensional array of microlenses or optics comprising several microlenses, wherein the array is preferably regular. In this way, an apparatus for the detection of wavefronts with high quality and a multitude of channels can be realized at low cost.
  • the illumination system of the wavefront source comprises at least one correction device 40 ′′ for correcting the intensity distribution of an illumination channel.
  • the effect of the correcting device may be variably adjustable e.g. by exchanging filter elements.
  • the correction of the intensity distribution which is preferably introduced in the region or a pupil plane of the illumination system, may be suitably adapted to the detection characteristics of the detector in such a way that the full dynamics of the detector may be exploited.
  • the area specific illumination intensity may decrease in the peripheral regions of the illuminated area due to oblique incidence of light. This can be compensated by correcting the intensity on the illumination side, wherein a lower illumination intensity is created in a central region as compared to a peripheral region of the illuminated area.
  • the correcting device 40 ′′ for correcting the intensity distribution comprises for each channel of the multilens microlens optics of the two-dimensional illumination array constructed in a quadratic array a gray filter 41 ′′ having a rotational symmetric transmission characteristics with a transmission T increasing towards the periphery, as schematically shown in FIG. 7 b .
  • the gray filters 41 ′′ are formed on a plane-parallel filter plate 36 ′′, which is disposed between the matt plate 34 ′′ and the imaging microlens system 30 ′′
  • the gray filters are disposed in the area of the pupil plane 33 ′′ of the illumination system.
  • gray filters may also be disposed at the matt disk 6 ′′ or the matt plate 34 ′′ or in another pupil plane of the illumination system, if such pupil plane exists.
  • An intensity correction of this type using gray filters can also be provided with one-channel illumination systems, e.g. in the system shown in FIG. 7 , where a gray filter may be formed e.g. at the matt disk 6 ′′.
  • the term “gray filter” in the sense of this application encompasses all devices effecting the spatial intensity in distribution and using diffraction, refraction, absorption or reflection.
  • the diffraction grating 11 is shown in FIG. 8 .
  • the diffraction grating 11 includes a chessboard grating 55 , which effects interference, i.e. the lateral shearing of the wavefronts.
  • the X and Y directions shown in FIG. 8 correspond to those of FIGS. 1-3 , and are to indicate that the chessboard grating 55 is arranged in the apparatus diagonally, in correspondence with the openings 51 and 53 , or 51 ′ and 53 ′, of the masks 8 and 8 ′.
  • FIG. 9 shows a further embodiment of a diffraction grating 11 ′ suitable for the apparatus of FIG. 1 , which is an amplitude grating constituted as a cross grating 11 ′.
  • FIG. 10 A further embodiment of a diffraction grating 11 ′′′ suitable for the apparatus of FIG. 1 is shown in FIG. 10 , and cooperates particularly advantageously with the illumination mask 8 ′′′ of FIG. 5 .
  • the diffraction grating 11 ′′′ is an amplitude grating constituted as a triangle grating, and has three directions of diffraction.
  • FIGS. 11 a and 11 b show a further advantageous diffraction grating 11 ′′.
  • the diffraction grating 11 ′′ includes a chessboard grating 58 which is shown enlarged in FIG. 11 b and effects interference, i.e., lateral shearing of the wavefronts.
  • a moiré line grating 59 connected to the chessboard grating 58 is arranged in the plane of the chessboard grating 58 in a region not required for the shearing of the wavefront.
  • FIG. 12 A further apparatus 101 for wavefront detection is schematically shown in axial longitudinal section in FIG. 12 .
  • the elements in FIG. 12 corresponding to the elements of FIGS. 1 - 9 have the same reference numbers, increased by the number 100 . For a description of these elements, reference is made to the description for FIGS. 1-9 .
  • Wavefronts emergent from a wavefront source pass through an optical system of which solely the optical element 115 is shown, and are transformed by the optical system into emergent wavefronts 110 which then strike a diffraction grating 111 .
  • the diffraction grating 111 is combined with a spatially resolving detector 119 to give a diffraction grating and detector unit 111 , 119 .
  • an image-preserving light guide fiber bundle 160 is contacted with a radiation-sensitive sensor surface 120 of the detector 119 .
  • the fiber bundle 160 ends on the diffraction grating side in a spherical fluorescence layer 161 which is concentric with the intersection point of the optical axis 150 and diffraction grating 111 , the optical axis 150 again being parallel to the Z direction.
  • a transparent hemisphere 163 is cemented into the concave surface of the fiber bundle 160 with a fluorescent cement, with the formation of the fluorescent layer 161 , the hemisphere 163 also serving for protection of the fluorescent layer 161 .
  • the diffraction grating 111 is arranged on the flat side of the hemisphere 163 .
  • a scattering secondary radiator surface can also be attained by matting the concave surface of the fiber bundle 160 .
  • the diffraction grating 111 is constituted as a chessboard grating or cross grating, i.e., it has a diffracting periodic structure respectively for the X direction, and for the Y direction orthogonal thereto. Phase gradients in more than one direction can thereby be determined from a single interferogram recorded by the spatially resolving detector 119 .
  • a translation module 137 is allocated for the displacement of the diffraction grating and detector unit 111 , 119 , and thus the diffraction grating 111 , in respectively the X or Y directions.
  • the contrast of one of the orthogonal interference systems of the diffraction grating 111 can thus be suppressed during the integration time of the radiation-sensitive sensitive sensor surface 120 by means of a movement of the diffraction grating by an integral multiple of the respective grating period.
  • FIG. 13 A further diffraction grating 211 and detector unit can be seen in FIG. 13 .
  • the elements in FIG. 13 corresponding to the elements of FIG. 12 have the same reference numbers, increased by the number 100 . For a description of these elements, reference is made to the description for FIG. 12 or for FIGS. 1-9 .
  • the interferogram of the secondary radiator surface 261 is imaged onto the image sensor 220 by means of a light conducting fiber bundle 260 constituted as a fiber plate and contacted directly with the secondary radiator surface 261 and the image sensor 220 .
  • the diffraction grating 211 can be moved separately from the detector 219 , e.g. for the mentioned displacement in one of the periodicity directions of the diffraction grating 211 orthogonal to the optical axis 250 .
  • the diffraction grating 211 can also be displaced parallel to the optical axis 250 , for the adjustment of the exit pupil size on the sensor surface 220 .
  • a secondary radiator surface which may be e.g. a frequency preserving matting or a frequency converting quantum converting layer, may also be disposed on the backside of a substrate carrying the diffraction grating 211 and facing the sensor surface.
  • FIG. 14 A diffraction grating and detector unit can be seen in FIG. 14 , in which the diffraction grating and the secondary radiator surface are arranged on a common diffraction grating holder.
  • the elements in FIG. 14 corresponding to the elements of FIG. 12 have the same reference numbers, increased by the number 200 For a description of these elements, reference is made to the description for FIG. 12 or for FIGS. 1-9 .
  • the embodiment 301 of FIG. 14 has a telecentric optical imaging system 322 which images, onto the radiation-sensitive sensor surface 320 , the interferogram of the secondary radiator surface 361 , which is curved toward the diffraction grating 311 and is situated on the side of the diffraction grating holder 363 remote from the diffraction grating.
  • a plane-parallel diffraction grating holder provided with a planar secondary radiator surface disposed on the backside facing the sensor.
  • a planar secondary radiator surface could be arranged directly adjacent to the sensor surface, with omission of the imaging system 322 .
  • the diffraction grating holder could thereby serve at the same time as a cover glass for the sensor surface 320 .
  • FIGS. 15 and 16 A further embodiment of an apparatus for wavefront detection is shown in FIGS. 15 and 16 .
  • the elements in FIGS. 15 and 16 corresponding to the elements of FIGS. 1-9 or of FIG. 12 have the same reference numbers, increased by the number 400 or 300 . For a description of these elements, reference is made to the description for FIGS. 1-9 or for FIG. 12 .
  • the apparatus 401 includes a wavefront module 465 , which is shown in FIG. 15 and also shown detail as an excerpt in FIG. 16 , and plural, spherical, secondary radiator surfaces 461 with light guide fiber bundles 460 respectively associated with these.
  • the wavefront source 407 shown as an excerpt in FIG. 16 includes a two-dimensional, e.g. hexagonal, arrangement of focusing lenses 430 and perforated masks 408 extended in the object plane of the optical system 405 , with a respective one of the focusing lenses 430 concentrating illumination light incident in the direction toward the diffraction grating 411 onto the associated perforated mask 408 .
  • the wavefronts in the whole image field of the optical system 405 can be detected in parallel for a large number of field points by means of the apparatus 401 for wavefront detection, as indicated in FIG. 15 using three beam paths emergent from the wavefront source 407 .
  • the optical system 405 can thus, based on the invention, be measured in parallel, i.e., simultaneously, for plural field points, as regards their imaging properties.
  • the apparatus 405 is thus a multi-channel apparatus for wavefront detection, while the apparatuses of FIGS. 1-14 are single-channel in this sense.
  • the diffraction grating and detector unit of FIG. 13 is however also suitable for the apparatus 401 .
  • FIG. 17 An arrangement 502 for microlithography in which a multi-channel apparatus for wavefront detection according to the invention is integrated is schematically shown in FIG. 17 .
  • the elements in FIG. 17 corresponding to the elements of FIG. 15 have the same reference numbers as in FIG. 15 , increased by the number 100 . For a description of these elements, reference is made to the description for FIG. 15 .
  • the microlithography arrangement 502 is in particular a stepper or scanner, and includes a microlithography projection objective 505 , into whose object plane a wavefront module 565 can be pushed in or pivoted in, in exchange for a reticle.
  • the wavefront module 505 is supplied with illuminating irradiation by means of an illumination field lens 569 .
  • the diffraction grating 511 being arranged in the image plane of the projection objective 505
  • the above-mentioned displacement of the diffraction grating 511 can then take place by means of the movable wafer stage 571 , which is already movable orthogonally with respect to the optical axis of the projection objective 505 , the whole diffraction grating and detector unit 511 , 519 being moved. Since the order of magnitude of the required displacement path is typically 10 ⁇ m, the shift of the exit pupil on the sensor surface caused by this displacement is negligibly small,
  • the diffraction grating and detector unit with regionally spherical detector shown in FIG. 15 can also preferably be used as the diffraction microlithography.
  • the region of the wavefront module or the wavefront source and/or the region of the diffraction grating-detector-unit or the diffraction grating free from oxygen and other substances such as water, hydrocarbons or the like which absorb the radiation used in the illumination process. Therefore, it is provided in some embodiments that these areas are purged or flushed with an inert gas or filled with an inert gas and sealed or evacuated.
  • a filling gas or purging gas a gas may be used which contains helium or nitrogen and is essentially free of oxygen.
  • a preferably gas tight sealable, transparent container e.g. comprising walls of calciumfluoride or fused silica, which surrounds the arrangement to be protected and can be filled or purged with a gas which is essentially non-absorbing for the use radiation and/or which can be evacuated.
  • the distortion of the projection objective 505 can be measured with the stepper/scanner 502 for microlithography, based on the multi-channel feature of the wavefront module 565 and diffraction grating and detector unit 511 , 519 . Since the phase relationships between the individual measurement channels are fixed and known, due to the compact diffraction grating and detector unit which is combined into a single constructional unit, the relative tilting of the wavefronts and thus the distortion can namely be determined by relative phase measurements.
  • FIG. 18 An arrangement 602 for microlithography with an aberration control circuit is schematically shown in axial longitudinal section in FIG. 18 .
  • the elements in FIG. 18 corresponding to the elements of FIG. 17 have the same reference numbers, increased by the number 100 . For a description of these elements, reference is made to the description for FIG. 17 or for FIGS. 1-16 .
  • the arrangement of FIG. 18 has as illumination system, plural illumination light guide fibers 629 respectively associated with a perforated mask 608 . That is, this illumination arrangement corresponds to a two-dimensional array of the arrangement shown in FIG. 6 .
  • the optical axis of the illumination is fixedly aligned to the main beam direction and thus a homogeneous illumination of the aperture stop from each object field point is possible.
  • the projection objective 605 of the microlithography arrangement 602 constituted as a stepper or scanner includes as optical elements, for example, three lenses 673 , 675 and 677 .
  • An operating element 679 , 681 and 683 by means of which the imaging properties of the corresponding lens and thus of the projection objective 605 are controllable, is respectively associated with the lenses 673 , 675 and 677 .
  • the operating elements can, e.g., be positioning members with which the associated lens can be displaced or rotated, or actuators, with which the associated lens can be deformed in a targeted manner or subjected to mechanical stress.
  • An apparatus 601 for wavefront detection includes an evaluation unit 604 which determines the instantaneous wavefront topography characteristic of the imaging properties of the projection objective 605 from the interferograms recorded by a sensor surface 620 .
  • a signal 686 corresponding to the sensed instantaneous wavefront is passed from the evaluation unit 604 to a comparator 685 .
  • the comparator 685 compares the signal 686 with a reference signal 687 corresponding to the desired imaging properties of the projection objective 605 .
  • operating signals 689 are passed to the operating elements 679 , 681 and 683 , and thereby act on the optical elements 673 , 675 , and 677 in a manner to reduce the aberrations of the projection objective 605 .
  • the apparatus 601 can detect the wavefronts in the whole image field of the projection objective 605 in parallel for a large number of field points.
  • the field distribution of the aberrations can be calculated therefrom.
  • the aberration components which can be affected by the operating elements are determined from this field distribution of the aberrations, and the control variables for the operating elements are then calculated by a suitable process, e.g., on variation tables based on optical calculations for the projection objective.

Abstract

An arrangement for microlithography includes a projection objective having a plurality of optical elements; an aberration control circuit controlling imaging properties of the projection objective; and at least one operating element associated with an optical element of the projection objective to control imaging properties of the projection objective in response to operating signals generated by the control circuit.

Description

  • This is a continuation of application Ser. No. 09/792,607 filed Feb. 23, 2001. The entire disclosure of the prior application, application Ser. No. 09/792,607, is considered part of the disclosure of this continuation application and is hereby incorporated by reference in its entirety. This application claims benefit of German Application DE 100 08 181.9, filed Feb. 23, 2000.
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The invention relates to an apparatus for the detection of wavefronts of electromagnetic radiation, in particular visible and ultraviolet light and soft X-rays, and also to a process for wavefront detection, and a stepper or scanner for microlithography with such an apparatus of the concerned category, for wavefront detection.
  • 2. Technical Field
  • An apparatus of the concerned category, for wavefront detection, is known from “Phase Measuring Ronchi Test”, by Katsuyuki Omura et al. (pages 523-528 in APPLIED OPTICS, Vol. 27, No. 3, February 1988). In this known apparatus, which is used for testing the imaging quality of a test lens, a monochromatic point light source of a He—Ne laser produces a wavefront, which passes through a collimator and a test lens and thereafter strikes a diffraction grating known as a Ronchi grating. The collimator transforms the wavefront emerging from the point light source into a plane wave striking the test lens, the diffraction grating being situated in the image-side focal plane of the test lens. The diffraction pattern or interferogram produced by the Ronchi grating is recorded by a spatially resolving detector including a TV camera, and is used thereon for the detection of the wavefront leaving the optical system.
  • DD 0154 239 also discloses an apparatus for wavefront detection of the concerned category termed a shearing interferometer, for the interferometric testing of objectives. In this apparatus for wavefront detection, the diffraction grating is situated outside the focal plane of the objective being tested.
  • In DE 195 38 747 A1, a grating shear interferometer for wavefront detection of the concerned category is described, in which the light of a plane wave to be investigated falls on two phase gratings, one behind the other, and is then sensed by a CCD camera for wavefront analysis.
  • A further apparatus for wavefront detection according to the preamble of claim 1 is known from the article “Evaluation of Large Aberrations Using a Lateral-Shear Interferometer Having Variable Shear” by M. P. Rimmer et al., in APPLIED OPTICS, Vol. 14, No. 1, January 1975, pages 142-150. The optical system connected between the wavefront source and the diffraction grating is a curved mirror in this case.
  • J. E. Pearson et al., in APPLIED OPTICS AND OPTICAL ENGINEERING, Vol. VII, Academic Press, Inc., 1979, Chapter 8, “Adaptive Optical Techniques for Wave-Front Correction”, referred to adaptive optics with hearing interferometers as wavefront detectors and to photolithography as a possible field of application for them.
  • The article “Dynamic range of Ronchi test with a phase-shifted sinusoidal grating” by K. Hibino et al. in APPLIED OPTICS, Vol. 36, No. 25, September 1997, pages 6178-6189, describes an apparatus for wavefront detection of the concerned category, in which a test lens transforms a monochromatic plane wave and deflects it onto a diffraction grating formed as a sine transmission grating. The wavefronts diffracted by the diffraction grating are collimated by an imaging lens and form, on a rotating matt disk arranged in the focal plane of the imaging lens, a shear interferogram which is recorded by a CCD detector and is then used for testing the test lens.
  • SUMMARY OF THE INVENTION
  • The invention has as its object to provide an improved apparatus of the concerned category for wavefront detection.
  • This object is attained by a wavefront source for production of a wavefront, a diffraction grating following the wavefront source, and a spatially resolving detector following the diffraction grating, wherein the wavefront source has a two-dimensional structure. The spatial coherence of the radiation can then be adjusted by means of the two-dimensional structure of the wavefront source such that the wavefronts transformed by the optical system can be measured with high accuracy.
  • This can take place, according to the invention, with the operating light source at the operating wavelength of the optical system. The apparatus for wavefront detection according to the invention is suitable for both coherent and incoherent radiation from the infrared as far as the X-ray region. A large spectral region is already accessible by the use of conventional CCD camera technique for the spatially resolving detector. At extremely short wavelengths, for example, a photoemission electron microscope (PEEM) can also be used as the spatially resolving detector. The spatially resolving detector may also comprise a sensor constructed with CMOS technique which is characterized by low power consumption and allows the integration of a digital-analog converter into the detector. A sensor using the CID (Charge Injection Device) technique is also possible.
  • Departing from the cited state of the art, according to the invention it is not required to irradiate the optical system to be tested with a plane wave, e.g., by arranging a collimator before it.
  • For very short wavelengths extending into the X-ray region, it can be advantageous to construct the wavefront source as a reflecting element, e.g., as a reflection mask.
  • In an advantageous embodiment, the wavefront source includes a perforated mask, whence the two-dimensional structure of the wavefront source has high contrast. Such a perforated mask can in particular have plural openings arranged in fourfold or threefold symmetry.
  • The perforated mask can then be arranged between an exit surface of a light guide and the optical system. In particular, a compact wavefront source of high luminance is obtained when the perforated mask is connected to the light guide.
  • When the perforated mask is situated in an object plane and the diffraction grating is situated in an image plane conjugate to the object plane, the wave front can be measured with finite-finite imaging of the optical system, while maintaining the exact distance between conjugate points of the optical system. The quality of an optical system can thus be tested in its specific field of use. Since this is possible without inserting additional components, for example collimator lenses, into the beam path of the optical system between the object and the image, the invention enables the calibration of such additional components to be dispensed with.
  • In a further advantageous embodiment, a displacement module is associated with a light guide—perforated mask combination, and displaces the perforated mask together with the exit surface of the light guide in the object plane. The imaging quality of the optical system for a large imaging field can be measured by means of the displacement of the wavefront source which is possible in this manner.
  • The light guide can be a multimode light guide, in order to also be able to test the imaging quality of the optical system when using white light, that is, a mixture of wavelengths, or multimode lasers of short coherence length (a few tens of μm). “Light guide” is of course intended to mean a radiation guide which is suitable over the visible region of the electromagnetic radiation and beyond.
  • In an advantageous embodiment, the diffraction grating is constituted in dependence on the structure of the wavefront source such that only given diffraction orders contribute to the interference at the diffraction grating.
  • Independently of this, the diffraction grating can be a phase grating or an amplitude grating, or any other suitable type of diffraction grating, e.g., a gray value grating produced by dithering or else a reflecting grating, which is of particular use for very short wavelengths.
  • According to another embodiment, the diffraction grating has a respective diffracting periodic structure for different directions. Phase gradients in more than one direction can thereby be determined from a single interferogram recorded by the spatially resolving detector.
  • It is then of particular advantage when these directions are mutually orthogonal, e.g., as in a diffraction grating constituted as a chessboard grating or cross grating: because the shearing caused by the grating, in the sense of the theory of the lateral shearing interferometer, is thereby produced simultaneously in the X and Y directions.
  • The diffraction grating can also have periodicity directions including angles of, e.g., 45°, 60°, or 120°. In a diffraction grating constituted as a triangle grating with periodicity directions respectively pairwise including an angle of 120°, or a triangle grating with 45° and 90°, i.e., with equilateral and right-angled triangles, more than two periodicity or displacement directions result. The redundancy resulting therefrom can be used for increasing the measurement accuracy by compensating calculation.
  • Such diffraction gratings with several periodicity directions, e.g., a sine grating periodic in the X and Y directions, can be suitably embodied as phase gratings in view of suppression of undesired diffraction orders and of their production.
  • In order to be able to test an optical system as accurately as possible in its operating distance between conjugate points, it is desirable to adjust the diffraction grating as accurately as possible in the image plane conjugate to the object plane. For this purpose, the diffraction grating includes a grating having a respective diffracting periodic structure in different periodicity directions, and a line grating coplanar with this, e.g., a line grating arranged in the plane of the diffraction grating and connected to the diffraction grating. This is because, in combination with a further line grating in the object plane and having its grating constants matched to the imaging scale of the optical system and to the grating constants of the line grating connected to the diffraction grating, a moiré pattern arises at a suitable orientation of the line grating. The best setting plane for the diffraction grating is then characterized by the maximum moiré contrast.
  • In view of the evaluation of the interferogram, it is advantageous for a translation module to be associated with the diffraction grating, for displacement of the diffraction grating in the two mutually orthogonal directions. The contrast of one of the orthogonal interference systems can then be suppressed by means of a movement of the diffraction grating by an integral multiple of the respective grating period.
  • However, the diffraction grating can also be a line diffraction grating, a rotation module then being advantageously associated with the diffraction grating for rotating the diffraction grating through 90° in order to be able to detect both orthogonal interference systems for a complete wavefront reconstruction.
  • The detector can be suitably matched to the interferogram by means of an imaging system arranged between the diffraction grating and the detector. It is then advantageous for the displacement module associated with the light guide to also displace the imaging system parallel to the image plane when the exit surface of the light guide is displaced.
  • With a correction of such an imaging system to the Abbé sine condition, the lateral shearing of the wavefronts caused by the diffraction grating is transmitted to the detector, constant for all aperture angles.
  • With a first beamsplitter arranged between a radiation source and the wavefront source to couple-out a portion of the radiation supplying the wavefront source, and a second beamsplitter which deflects the portion of radiation coupled-out by the first beamsplitter to the detector, bypassing the optical system and diffraction grating, the constancy of the radiation source or wavefront source can be monitored. A reference light guide can then transport the radiation fraction coupled-out by the first beamsplitter to the second beamsplitter. A portion of the illuminating radiation can also be deflected to the deflector past the diffraction grating, e.g. through a recess of the diffraction grating.
  • According to a further viewpoint of the invention, the basic object is attained by a diffraction grating through which a wavefront passes, and a spatially resolving detector following the diffraction grating, wherein the detector is curved at least regionally toward the diffraction grating. A detector which is curved toward the diffraction grating can detect the interferogram produced by the diffraction grating in a manner which is advantageous for the subsequent use of the interferogram.
  • Thus with a regionally spherical detector the lateral shearing, produced by the diffraction grating, of the wavefronts can be transferred, constant or undistorted, to the detector independently of the diffraction angle. This gives a considerably simplified reconstruction of the wavefront topography from the shear interferograms.
  • This can be understood from the fact that the shear interferogram depends on the phase displacement between the diffracted wavefront and the undiffracted wavefront, and this phase displacement is constant on a spherical surface concentric with the origin of the undiffracted wavefront.
  • When the detector includes an at least regionally spherical secondary radiating surface arranged between the diffraction grating and the radiation-sensitive sensor surface, conventional image sensors with a planar radiation-sensitive surface, for example, TV cameras, CCD sensors, PEEM, and the like, can be used for an apparatus according to the invention. Suitable secondary radiating surfaces can for example be constituted as a ground glass screen or as a fluorescent layer.
  • By means of a suitable frequency-converting secondary radiating surface, for example, a fluorescent layer, the detector itself can be adjusted to the respective measurement wavelength within a large wavelength range, with the use of commercially available radiation sensitive sensor surfaces which are optimized for the visible wavelength region.
  • In a further embodiment, the detector includes on the diffraction grating side a number of light guides, the ends of whose light guides on the diffraction grating side are arranged on a spherical shell. This can be effected, for example, by polishing a concave spherical surface in the end of an imaging optical fiber bundle or in an optical fiber plate.
  • The plural light guides arranged between the diffraction grating and the detector can, as an image-preserving optical fiber bundle, transport the interferogram to a relatively freely positionable sensor surface. The diffraction grating can thereby be arranged within a vacuum, for example, and an image sensor acting as a heat source, for example a TV camera, outside the vacuum.
  • With a view to a reliable detection of the shear interferogram, the light guide ends remote from the diffraction grating can be directly associated with the radiation-sensitive sensor surface. For example, the fiber bundle end can be placed in direct contact with a camera chip.
  • The detector can also include a preferably telecentric imaging optical system. Imaging of the interferogram onto the radiation-sensitive surface in a manner suited to the dimensions of the sensor surface is thereby possible.
  • According to a further viewpoint of the invention, the basic object is attained by a diffraction grating holder that holds the diffraction grating and has a secondary radiator source. With a grating holder having both the diffraction grating and also a secondary radiator surface, the apparatus for wavefront detection can thereby be particularly compact. It is thereby possible to integrate an apparatus for wavefront detection according to the invention into already existing optical imaging devices, for operational monitoring of the imaging quality.
  • Particularly advantageous is a hemisphere which is arranged between the diffraction grating and the radiation-sensitive sensor surface and supports the diffraction grating on its planar surface. The already mentioned advantages of spherical sensor surfaces can thereby be attained in a compact and robust constructional form. The spherical surface region of the hemisphere is then preferably constituted as the secondary radiator surface.
  • This hemispherical embodiment of the diffraction grating holder can be combined, in a manner which is efficient as regards production technology, with an optical fiber bundle and a secondary radiating surface if the optical fiber bundle ends on the diffraction grating side are connected to the spherical surface region of the hemisphere with a frequency-converting cement.
  • In a further embodiment, a wavefront module is arranged in front of the diffraction grating, and an optical system is arranged between the wavefront module and the diffraction grating. The optical system can thereby be investigated with high accuracy, with a diffraction grating and detector unit adjusted to the wavefront module.
  • With plural wavefront sources in the wavefront module, the optical system can be investigated with respect to its object field at plural field points simultaneously, i.e., in parallel. A considerable reduction of the time required for the investigation of an optical system is possible by means of such a simultaneous measurement of the wavefronts at many field points.
  • When each wavefront source has a perforated mask, the structure of the wavefront sources can be adjusted to the imaging scale of the optical system and the diffraction grating such that only given diffraction orders contribute to the interference at the diffraction grating, whereby the evaluation of the interferogram becomes particularly efficient. Furthermore, a perforated mask gives high contrast to the two-dimensional structure of the wavefront source. With a view to a highly accurate wavefront analysis, the perforated mask can have plural openings.
  • In an embodiment, a refractive or diffractive focusing optics is associated with each wavefront source and concentrates incident illuminating light onto the wavefront source. A standard illuminating device of the optical system, usually illuminating a relatively large object field, can be used for the wavefront module in this manner.
  • Plural light guides are advantageously associated with each wavefront source. The interferograms of the individual wavefront sources can thereby be satisfactorily imaged on a respectively allocated region of the radiation-sensitive sensor surface.
  • The association of a spherical secondary radiator surface with each wavefront source makes possible undistorted detection by the detector of the lateral shearing produced by the diffraction grating.
  • The apparatus according to the invention is particularly suitable, because of its compactness and evaluation efficiency and accuracy, for the testing of projection objectives for microlithography.
  • The invention also relates to a process for wavefront detection comprising the steps of producing a wavefront by a wavefront source, producing an interferogram with the wavefront and with a diffraction grating having a diffracting periodic structure respectively in different periodicity directions, recording an image of the interferogram with a radiation-sensitive detector, and displacing the wavefront source or the diffraction grating in one periodicity direction by an integral multiple of a corresponding grating period. The contrast of one of the orthogonal interference systems can be suppressed, and the evaluation of the interferogram considerably simplified, by the displacement of the wavefront source or of the diffraction grating in one of its periodicity directions by an integral multiple of the corresponding grating period.
  • The displacement of the wavefront source or of the diffraction grating can then take place during the image recording time of the detector, typically 30 milliseconds. The displacement path of the diffraction grating is then typically 6-18 μm.
  • However, with a very fast detector, plural interferogram images can also be recorded during the displacement of the wavefront source or of the diffraction grating, the plural interferogram images then being used for wavefront detection. A superposition of the individual interferogram images then again corresponds to the abovementioned image integration during the complete diffraction grating displacement.
  • The phase modulation by a reciprocating motion of the diffraction grating with a frequency ω and by adjoining narrow-band filters, known, for example, from DE 195 38 747 A1, can be further superposed on this displacement, according to the invention, of the diffraction grating in one of its periodicity directions by an integral multiple of the corresponding grating period.
  • The invention furthermore also relates to a process comprising the steps of producing a wavefront by a wavefront source, producing an interferogram with the wavefront and with a diffraction grating having a diffracting periodic structure respectively in different periodicity directions, and displacing the wavefront source or the diffraction grating by a fraction of the corresponding grating period, and detecting the resulting interferogram, repeating the displacement step, and averaging the interferograms detected in the individual displacement steps for the wavefront detection. The displacing step comprises displacing the wavefront source or the diffraction grating in a direction defined by vectorial superposition of the different periodicity directions. The total amount of displacement of the wavefront source or the diffraction grating is smaller than or equal to half of the corresponding grating period. This aspect of the invention is based on the following problem.
  • According to experience, interfering signals are superposed on the desired signal in the interferogram. These interfering signals can originate from production errors or imperfections of the diffraction grating or of the wavefront source, per se from the smallest maladjustments of the components, from an imperfect illumination of the wavefront source, or from ghost images or ghost interferograms due to possible back-reflections from the optical system and from the apparatus for wavefront detection (e.g., from the detector surface, grating back side, etc.). These interferences are typically periodically superposed on the desired signal, i.e., they vary periodically around the correct measurement value. Their frequency, phase position and amplitude can be detected by variation of the initial phase (phase position of the grating relative to the wavefront source).
  • In particular, with a variation of the phase position of the wavefront source, e.g., by displacement of the illumination mask with respect to the stationary diffraction grating, distinct amplitudes, i.e. large changes of the interfering signals, then appear.
  • Since such interferences vary periodically around the average value, they can be eliminated by computer, by displacement of the position of the wavefront source or of the diffraction grating by defined fractions of the respective period and subsequent averaging of the measurement values.
  • The Applicant has found in this connection that the interference signals have a dominant contribution to the second harmonic of the desired signal, and thus run through two oscillation periods when the initial phase is varied by a period of the grating or of the wavefront source.
  • The invention furthermore relates to a stepper or scanner for microlithography, with an apparatus for wavefront detection described herein-above.
  • Such a stepper/scanner can be monitored in situ, i.e., at the place of production and during the production cycle, without great disturbance of the course of production, for its production quality, for example, for the adherence to tolerance limits for the respective image errors, if the wavefront module can be brought operationally into the object plane of the projection objective and removed from it and/or when the diffraction grating can be brought operationally into the object plane of the projection objective and removed from it.
  • It is particularly favorable when the stepper/scanner has an aberration control circuit, which can act on the projection objective by means of active or manipulator elements.
  • A particular suitability of the apparatus for wavefront detection according to the invention in a stepper or scanner for microlithography is also based on the fact that it is suitable for both coherent and also incoherent radiation, from the infrared as far as the X-ray region, and also particularly for radiation sources of short coherence length such as a HBO lamp, an excimer laser or a synchrotron radiator. Production monitoring can also take place with the operating light source at the operating wavelength of the microlithography projection objective.
  • BRIEF DESCRIPTION OF DRAWINGS
  • The invention is described hereinafter using embodiment examples in connection with the accompanying schematic drawings.
  • FIG. 1 is a diagram showing an embodiment of the apparatus for wavefront detection according to the invention;
  • FIG. 2 is a plan view of the illumination mask of the wavefront source of FIG. 1;
  • FIG. 3 is a plan view of an alternative illumination mask;
  • FIG. 4 is a diagram showing a further illumination mask, suitable for the wavefront source of FIG. 1;
  • FIG. 5 is a diagram showing yet another illumination mask, Suitable for the wavefront source of FIG. 1;
  • FIG. 6 is a diagram showing an embodiment of the illumination system and illumination mask;
  • FIG. 7 is a diagram showing a further embodiment of the illumination system and illumination mask;
  • FIG. 7 a is a diagram showing another embodiment of the illumination system and illumination mask comprising a stack of microlens plates and integrated gray filters for correcting the spatial intensity distribution;
  • FIG. 7 b is a schematic diagram of the transmission of the gray filter shown in FIG. 7 a as a function of the radial distance from the central axis of the gray filter;
  • FIG. 8 is a plan view showing the diffraction grating of the apparatus of FIG. 1;
  • FIG. 9 is a diagram showing a second diffraction grating usable for the apparatus of FIG. 1;
  • FIG. 11 is a diagram showing a third diffraction grating usable for the apparatus of FIG. 1;
  • FIG. 12 is a diagram showing a fourth diffraction grating usable for the apparatus of FIG. 1;
  • FIG. 12 is a diagram showing a further apparatus for wavefront detection according to the invention, constituted as a diffraction grating and detector unit;
  • FIG. 13 is a diagram showing a third apparatus for wavefront detection according to the invention, constituted as a diffraction grating and detector unit;
  • FIG. 14 is a diagram showing a fourth apparatus for wavefront detection according to the invention, constituted as a diffraction grating and detector unit;
  • FIG. 15 is a diagram showing an embodiment with plural parallel measurement channels;
  • FIG. 16 is an enlarged sectional diagram of the wavefront module of the embodiment of FIG. 15;
  • FIG. 17 is a diagram showing an arrangement for microlithography with a multi-channel apparatus for wavefront detection; and
  • FIG. 18 is a diagram showing an arrangement according to FIG. 17, with an aberration control circuit.
  • DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
  • An apparatus 1 for wavefront detection is shown schematically in a longitudinal section in FIG. 1. A wavefront source 7 arranged in an object plane 3 of an optical system 5 produces a wavefront. The wavefronts 9, shown schematically as contour lines, emergent from the wavefront source 7 pass through the optical system 5 and are formed by the optical system 5 into emergent wavefronts 10 which then strike a diffraction grating 11.
  • The optical system 5, whose optical axis 50 is parallel to a Z direction, includes two optical elements symbolized by double arrows, e.g., lenses 13 and 15, and images the wavefront source 7 on the diffraction grating 11, the diffraction grating 11 being situated in the image plane conjugate to the object plane 3. An aperture stop 17 of the optical system 5 can likewise be Recognized in FIG. 1.
  • A spatially resolving detector 19 follows the diffraction grating 11. The detector 19 includes a radiation-sensitive sensor surface 20, e.g., a CCD chip, and also an imaging system 22 arranged between the diffraction grating 11 and the sensor surface 20 and imaging on the sensor surface 20 the interferogram or shearing diagram produced by the diffraction grating 11. The imaging system 22 has a microscope objective 21 and further optical elements 23 and 25 and, together with the optical element 15, images the aperture stop 17 onto the sensor surface 20, as shown by the pupil beam path 27. The imaging system 22 is sine corrected, the quality of the sine correction of the microscope objective 21 being decisive for the constancy of the shear distance over the measured wavefront.
  • The wavefront source 7 includes a perforated mask 8, shown in detail in FIG. 2, installed at the output of a light guide 29. For the investigation of the whole image field of the optical system, the light guide 29 is displaceable parallel to the object plane 3 in the X and/or Y direction by means of a displacement module 31, as illustrated by the double arrow 33 and the dash-dot phantom diagrams 35.
  • In the apparatus 1, the detector 19 is also moved by the displacement module 31 in the X and/or Y direction simultaneously with the light guide 29, for scanning the image field of the optical system 5.
  • The diffraction grating 11 can be displaced by a translation module 37 in the image field of the optical system 5, i.e. in the X direction and/or Y direction, in order to be able to suppress the contrast of one of the orthogonal interference systems of the diffraction grating 11.
  • A first beamsplitter 45 is arranged between a radiation source 43 and the wavefront source 7, for coupling-out a portion of the radiation supplying the wavefront source. A second beamsplitter 47 arranged between the optical elements 23 and 25 in a focal point of the wavefront deflects the portion of radiation coupled-out by the first beamsplitter 45, by-passing the optical system 5 and diffraction grating 11, to the sensor surface 20, whereby the constancy of the radiation source 43 can be monitored. A reference light guide 49 conveys the radiation portion coupled-out by the first beamsplitter 45 to the second beamsplitter 47.
  • As can be seen in FIG. 2, the perforated mask 8 of the wavefront source 7 has a square opening 53 arranged centered on the optical axis 50 of the optical system 5, and four openings 51 arranged around and spaced from the opening 53 and symmetrically with respect to the optical axis 50.
  • A further embodiment of a perforated mask suitable for the wavefront source 7 is shown in FIG. 3. This perforated mask 8′ includes a square opening 53′ likewise arranged centered on the optical axis 50 of the optical system 5 and four openings 51′ arranged adjoining the opening 53′ and symmetrically around the optical axis 50.
  • The number of openings of a perforated mask according to the invention can also be greater than in FIGS. 2 and 3, according to the case of application.
  • These two-dimensional structures of the wavefront source 7 are matched to the diffraction grating shown in FIGS. 8 and 9 such that only given orders of diffraction contribute to the interference at the diffraction grating.
  • A perforated mask 8′ with rotationally symmetrical transmission distribution is shown in FIG. 4; in it, a central circular surface 54 and also an annular surface 56 are transparent, and complementary annular surfaces 52 are opaque.
  • An illumination mask 8′″ with openings 57 is shown in FIG. 5, and is constituted as equilateral triangles. The illumination mask 8′″ thus has a triangular symmetry and cooperates particularly advantageously with the diffraction grating of FIG. 10.
  • FIGS. 6 and 7 show alternative embodiments of arrangements of illumination system and illumination masks.
  • FIG. 6 shows an expanding or focusing lens 30 arranged between a light guide fiber 29′ and a perforated mask 8 installed on a matt disk 6.
  • Spatial coherence can be controlled by means of the matt disk 6; attention has to be paid to the illumination of the perforated mask 8 ideally being incoherent, in order to be able to form in a targeted manner the spatial coherence distribution due to the perforated mask geometry.
  • The illumination aperture can be matched to the aperture stop 17 by means of the lens 30. The aperture stop can thereby be completely illuminated, i.e., an insufficient filling of the aperture stop 17 can be avoided, even if the numerical aperture of the illumination fiber 29′ and of the optical system do not mutually correspond.
  • A perforated mask 8′ illuminated by means of a condenser lens 32, with a matt disk 6′ and expanding or focusing lens 30′ arranged between them, is shown in FIG. 7.
  • In another embodiment (FIG. 7 a) a microlens system 30″ is provided in place of the expanding or focusing lens 30′. The microlens system may comprise one or more microlens plates. The microlens system may comprise a stack of two or more transparent plates 31″ which are disposed successively when viewed in the radiation direction. The plates may be manufactured from fused silica or calcium fluoride and one or more refractive or diffractive microlenses 32″ may be formed on a plate e.g. by a lithographic manufacturing process. The microlens system shown in FIG. 7 a comprises two immediately adjacent lens plates 31″ and is incorporated in a stack or optical elements, wherein the stack comprises a plane-parallel plate 34″ with a matt disk or focusing disk 6″ on the entrance side thereof and a plane-parallel plate 35″ with a mask 8″ on the exit side of the radiation. Microlens systems or optical systems of this kind constructed with plates can be manufactured at low cost and are compact in size. The microlenses are easily adjustable by adjusting the plates relative to each other. A parallel arrangement of lenses or lens systems is preferred, e.g. by providing a one-dimensional or two-dimensional array of microlenses or optics comprising several microlenses, wherein the array is preferably regular. In this way, an apparatus for the detection of wavefronts with high quality and a multitude of channels can be realized at low cost.
  • In certain embodiments the illumination system of the wavefront source comprises at least one correction device 40″ for correcting the intensity distribution of an illumination channel. The effect of the correcting device may be variably adjustable e.g. by exchanging filter elements. The correction of the intensity distribution, which is preferably introduced in the region or a pupil plane of the illumination system, may be suitably adapted to the detection characteristics of the detector in such a way that the full dynamics of the detector may be exploited. For example, with a detector having a planar sensor surface, e.g. a CCD chip, the area specific illumination intensity may decrease in the peripheral regions of the illuminated area due to oblique incidence of light. This can be compensated by correcting the intensity on the illumination side, wherein a lower illumination intensity is created in a central region as compared to a peripheral region of the illuminated area.
  • In the embodiment shown in FIG. 7 a the correcting device 40″ for correcting the intensity distribution comprises for each channel of the multilens microlens optics of the two-dimensional illumination array constructed in a quadratic array a gray filter 41″ having a rotational symmetric transmission characteristics with a transmission T increasing towards the periphery, as schematically shown in FIG. 7 b. The gray filters 41″ are formed on a plane-parallel filter plate 36″, which is disposed between the matt plate 34″ and the imaging microlens system 30″ The gray filters are disposed in the area of the pupil plane 33″ of the illumination system. Alternatively or additionally gray filters may also be disposed at the matt disk 6″ or the matt plate 34″ or in another pupil plane of the illumination system, if such pupil plane exists. An intensity correction of this type using gray filters can also be provided with one-channel illumination systems, e.g. in the system shown in FIG. 7, where a gray filter may be formed e.g. at the matt disk 6″. The term “gray filter” in the sense of this application encompasses all devices effecting the spatial intensity in distribution and using diffraction, refraction, absorption or reflection.
  • The diffraction grating 11 is shown in FIG. 8. The diffraction grating 11 includes a chessboard grating 55, which effects interference, i.e. the lateral shearing of the wavefronts. The X and Y directions shown in FIG. 8 correspond to those of FIGS. 1-3, and are to indicate that the chessboard grating 55 is arranged in the apparatus diagonally, in correspondence with the openings 51 and 53, or 51′ and 53′, of the masks 8 and 8′.
  • FIG. 9 shows a further embodiment of a diffraction grating 11′ suitable for the apparatus of FIG. 1, which is an amplitude grating constituted as a cross grating 11′.
  • A further embodiment of a diffraction grating 11′″ suitable for the apparatus of FIG. 1 is shown in FIG. 10, and cooperates particularly advantageously with the illumination mask 8′″ of FIG. 5. The diffraction grating 11′″ is an amplitude grating constituted as a triangle grating, and has three directions of diffraction.
  • FIGS. 11 a and 11 b show a further advantageous diffraction grating 11″. The diffraction grating 11″ includes a chessboard grating 58 which is shown enlarged in FIG. 11 b and effects interference, i.e., lateral shearing of the wavefronts. A moiré line grating 59 connected to the chessboard grating 58 is arranged in the plane of the chessboard grating 58 in a region not required for the shearing of the wavefront.
  • A further apparatus 101 for wavefront detection is schematically shown in axial longitudinal section in FIG. 12. The elements in FIG. 12 corresponding to the elements of FIGS. 1-9 have the same reference numbers, increased by the number 100. For a description of these elements, reference is made to the description for FIGS. 1-9.
  • Wavefronts emergent from a wavefront source pass through an optical system of which solely the optical element 115 is shown, and are transformed by the optical system into emergent wavefronts 110 which then strike a diffraction grating 111.
  • The diffraction grating 111 is combined with a spatially resolving detector 119 to give a diffraction grating and detector unit 111, 119.
  • Here an image-preserving light guide fiber bundle 160 is contacted with a radiation-sensitive sensor surface 120 of the detector 119. The fiber bundle 160 ends on the diffraction grating side in a spherical fluorescence layer 161 which is concentric with the intersection point of the optical axis 150 and diffraction grating 111, the optical axis 150 again being parallel to the Z direction.
  • A transparent hemisphere 163 is cemented into the concave surface of the fiber bundle 160 with a fluorescent cement, with the formation of the fluorescent layer 161, the hemisphere 163 also serving for protection of the fluorescent layer 161. The diffraction grating 111 is arranged on the flat side of the hemisphere 163.
  • Because of the scattering effect of the fluorescent layer 161 in all directions, not only a wavelength adaptation to the spectral sensitivity of the sensor surface 120 can take place by means of the fluorescent layer 161, but also the coupling-in of the diffracted radiation into the individual light guide fibers is improved. In a case that a conversion of frequency or wavelength is not required, instead of the fluorescent layer 161 a scattering secondary radiator surface can also be attained by matting the concave surface of the fiber bundle 160.
  • The diffraction grating 111 is constituted as a chessboard grating or cross grating, i.e., it has a diffracting periodic structure respectively for the X direction, and for the Y direction orthogonal thereto. Phase gradients in more than one direction can thereby be determined from a single interferogram recorded by the spatially resolving detector 119. With a view to the evaluation of the interferogram, a translation module 137 is allocated for the displacement of the diffraction grating and detector unit 111, 119, and thus the diffraction grating 111, in respectively the X or Y directions. The contrast of one of the orthogonal interference systems of the diffraction grating 111 can thus be suppressed during the integration time of the radiation-sensitive sensitive sensor surface 120 by means of a movement of the diffraction grating by an integral multiple of the respective grating period.
  • A further diffraction grating 211 and detector unit can be seen in FIG. 13. The elements in FIG. 13 corresponding to the elements of FIG. 12 have the same reference numbers, increased by the number 100. For a description of these elements, reference is made to the description for FIG. 12 or for FIGS. 1-9.
  • In the diffraction grating and detector unit 201 of FIG. 13, the interferogram of the secondary radiator surface 261 is imaged onto the image sensor 220 by means of a light conducting fiber bundle 260 constituted as a fiber plate and contacted directly with the secondary radiator surface 261 and the image sensor 220. In this embodiment, the diffraction grating 211 can be moved separately from the detector 219, e.g. for the mentioned displacement in one of the periodicity directions of the diffraction grating 211 orthogonal to the optical axis 250. In addition, the diffraction grating 211 can also be displaced parallel to the optical axis 250, for the adjustment of the exit pupil size on the sensor surface 220. A secondary radiator surface, which may be e.g. a frequency preserving matting or a frequency converting quantum converting layer, may also be disposed on the backside of a substrate carrying the diffraction grating 211 and facing the sensor surface.
  • A diffraction grating and detector unit can be seen in FIG. 14, in which the diffraction grating and the secondary radiator surface are arranged on a common diffraction grating holder. The elements in FIG. 14 corresponding to the elements of FIG. 12 have the same reference numbers, increased by the number 200 For a description of these elements, reference is made to the description for FIG. 12 or for FIGS. 1-9.
  • The embodiment 301 of FIG. 14 has a telecentric optical imaging system 322 which images, onto the radiation-sensitive sensor surface 320, the interferogram of the secondary radiator surface 361, which is curved toward the diffraction grating 311 and is situated on the side of the diffraction grating holder 363 remote from the diffraction grating. In other embodiments there is provided a plane-parallel diffraction grating holder provided with a planar secondary radiator surface disposed on the backside facing the sensor.
  • A planar secondary radiator surface could be arranged directly adjacent to the sensor surface, with omission of the imaging system 322. The diffraction grating holder could thereby serve at the same time as a cover glass for the sensor surface 320.
  • A further embodiment of an apparatus for wavefront detection is shown in FIGS. 15 and 16. The elements in FIGS. 15 and 16 corresponding to the elements of FIGS. 1-9 or of FIG. 12 have the same reference numbers, increased by the number 400 or 300. For a description of these elements, reference is made to the description for FIGS. 1-9 or for FIG. 12.
  • The apparatus 401 includes a wavefront module 465, which is shown in FIG. 15 and also shown detail as an excerpt in FIG. 16, and plural, spherical, secondary radiator surfaces 461 with light guide fiber bundles 460 respectively associated with these.
  • The wavefront source 407 shown as an excerpt in FIG. 16 includes a two-dimensional, e.g. hexagonal, arrangement of focusing lenses 430 and perforated masks 408 extended in the object plane of the optical system 405, with a respective one of the focusing lenses 430 concentrating illumination light incident in the direction toward the diffraction grating 411 onto the associated perforated mask 408.
  • Thus the wavefronts in the whole image field of the optical system 405 can be detected in parallel for a large number of field points by means of the apparatus 401 for wavefront detection, as indicated in FIG. 15 using three beam paths emergent from the wavefront source 407. The optical system 405 can thus, based on the invention, be measured in parallel, i.e., simultaneously, for plural field points, as regards their imaging properties.
  • The apparatus 405 is thus a multi-channel apparatus for wavefront detection, while the apparatuses of FIGS. 1-14 are single-channel in this sense. The diffraction grating and detector unit of FIG. 13 is however also suitable for the apparatus 401.
  • An arrangement 502 for microlithography in which a multi-channel apparatus for wavefront detection according to the invention is integrated is schematically shown in FIG. 17. The elements in FIG. 17 corresponding to the elements of FIG. 15 have the same reference numbers as in FIG. 15, increased by the number 100. For a description of these elements, reference is made to the description for FIG. 15.
  • The microlithography arrangement 502 is in particular a stepper or scanner, and includes a microlithography projection objective 505, into whose object plane a wavefront module 565 can be pushed in or pivoted in, in exchange for a reticle. The wavefront module 505 is supplied with illuminating irradiation by means of an illumination field lens 569. A diffraction grating and detector unit 511, 519 of the type shown in FIG. 13 is situated instead of a wafer on a wafer stage 571, and is operationally interchangeable with a wafer, the diffraction grating 511 being arranged in the image plane of the projection objective 505 The above-mentioned displacement of the diffraction grating 511 can then take place by means of the movable wafer stage 571, which is already movable orthogonally with respect to the optical axis of the projection objective 505, the whole diffraction grating and detector unit 511, 519 being moved. Since the order of magnitude of the required displacement path is typically 10 μm, the shift of the exit pupil on the sensor surface caused by this displacement is negligibly small,
  • The diffraction grating and detector unit with regionally spherical detector shown in FIG. 15 can also preferably be used as the diffraction microlithography.
  • Particularly for applications at operating wavelengths of less than ca. 22 nm, e.g. for 193 nm, 157 nm, or below, it is useful to keep the region of the wavefront module or the wavefront source and/or the region of the diffraction grating-detector-unit or the diffraction grating free from oxygen and other substances such as water, hydrocarbons or the like which absorb the radiation used in the illumination process. Therefore, it is provided in some embodiments that these areas are purged or flushed with an inert gas or filled with an inert gas and sealed or evacuated. As a filling gas or purging gas a gas may be used which contains helium or nitrogen and is essentially free of oxygen. There may be provided a preferably gas tight sealable, transparent container, e.g. comprising walls of calciumfluoride or fused silica, which surrounds the arrangement to be protected and can be filled or purged with a gas which is essentially non-absorbing for the use radiation and/or which can be evacuated.
  • For example, the distortion of the projection objective 505 can be measured with the stepper/scanner 502 for microlithography, based on the multi-channel feature of the wavefront module 565 and diffraction grating and detector unit 511, 519. Since the phase relationships between the individual measurement channels are fixed and known, due to the compact diffraction grating and detector unit which is combined into a single constructional unit, the relative tilting of the wavefronts and thus the distortion can namely be determined by relative phase measurements.
  • An arrangement 602 for microlithography with an aberration control circuit is schematically shown in axial longitudinal section in FIG. 18. The elements in FIG. 18 corresponding to the elements of FIG. 17 have the same reference numbers, increased by the number 100. For a description of these elements, reference is made to the description for FIG. 17 or for FIGS. 1-16.
  • Differing from the stepper/scanner 502, the arrangement of FIG. 18 has as illumination system, plural illumination light guide fibers 629 respectively associated with a perforated mask 608. That is, this illumination arrangement corresponds to a two-dimensional array of the arrangement shown in FIG. 6.
  • In this matrix arrangement of illuminating fibers, the optical axis of the illumination is fixedly aligned to the main beam direction and thus a homogeneous illumination of the aperture stop from each object field point is possible.
  • The projection objective 605 of the microlithography arrangement 602 constituted as a stepper or scanner includes as optical elements, for example, three lenses 673, 675 and 677. An operating element 679, 681 and 683, by means of which the imaging properties of the corresponding lens and thus of the projection objective 605 are controllable, is respectively associated with the lenses 673, 675 and 677. The operating elements can, e.g., be positioning members with which the associated lens can be displaced or rotated, or actuators, with which the associated lens can be deformed in a targeted manner or subjected to mechanical stress.
  • An apparatus 601 for wavefront detection includes an evaluation unit 604 which determines the instantaneous wavefront topography characteristic of the imaging properties of the projection objective 605 from the interferograms recorded by a sensor surface 620.
  • A signal 686 corresponding to the sensed instantaneous wavefront is passed from the evaluation unit 604 to a comparator 685. The comparator 685 compares the signal 686 with a reference signal 687 corresponding to the desired imaging properties of the projection objective 605. Derived from the result of the comparison, operating signals 689 are passed to the operating elements 679, 681 and 683, and thereby act on the optical elements 673, 675, and 677 in a manner to reduce the aberrations of the projection objective 605.
  • In the manner of a control circuit, i.e., of a closed circuit, these steps are repeated until the signal 686 corresponds to the signal 687, that is, the projection objective 605 has the desired imaging properties.
  • It is however possible to operate the arrangement 602 in the manner of an aberration control, that is, an open circuit, omitting feedback loops.
  • It is advantageous for this purpose that the apparatus 601 can detect the wavefronts in the whole image field of the projection objective 605 in parallel for a large number of field points. The field distribution of the aberrations can be calculated therefrom. The aberration components which can be affected by the operating elements are determined from this field distribution of the aberrations, and the control variables for the operating elements are then calculated by a suitable process, e.g., on variation tables based on optical calculations for the projection objective.

Claims (38)

1. An arrangement for microlithography comprising:
a projection objective having a plurality of optical elements;
an aberration control circuit controlling imaging properties of the projection objective, the aberration control circuit including:
an apparatus for wavefront detection determining an instantaneous wavefront topography characteristic of the imaging properties of the projection objective; and
at least one operating element mechanically coupled to an optical element of the projection objective to control, by mechanical action on the coupled optical element, imaging properties of the projection objective in response to operating signals generated by the apparatus for wavefront detection.
2. The arrangement according to claim 1, wherein the at least one operating element is a positioning member configured to change the position of the coupled optical element relative to other ones of the optical elements of the projection objective.
3. The arrangement according to claim 1, wherein the at least one operating element is a positioning member configured to displace the coupled optical element of the projection objective.
4. The arrangement according to claim 1, wherein the at least one operating element is a positioning member configured to rotate the coupled optical element of the projection objective.
5. The arrangement according to claim 1, wherein the at least one operating element includes an actuator configured to deform the coupled optical element.
6. The arrangement according to claim 1, wherein the at least one operating element includes an actuator configured to apply mechanical stress to the coupled optical element.
7. The arrangement according to claim 1, wherein the optical element coupled to the at least one operating element is a lens of the projection objective.
8. The arrangement according to claim 1, wherein the projection objective has at least two of the operating elements, each coupled to a respective optical element and configured to control optical properties of the respective optical element.
9. The arrangement according to claim 1, wherein the aberration control circuit is configured as a closed loop circuit including a feedback loop.
10. The arrangement according to claim 1, wherein the aberration control circuit is configured as an open control circuit without a feedback loop.
11. The arrangement according to claim 1, wherein the aberration control circuit includes a comparator comparing signals emitted by the apparatus for wave-front detection and corresponding to a detected wavefront with a reference value that corresponds to a desired imaging property of the projection objective, and wherein the comparator emits signals controlling the at least one operating element.
12. The arrangement according to claim 1, wherein the apparatus for wavefront detection includes a diffraction grating.
13. The arrangement according to claim 1, wherein the apparatus for wavefront detection is an interferometer.
14. The arrangement according to claim 1, wherein the apparatus for wavefront detection comprises:
a wavefront source which produces a wavefront;
a diffraction grating following the wavefront source; and
a spatially resolving detector following the diffraction grating.
15. The arrangement according to claim 14, wherein the wavefront source is configured to move between a first position in an object plane of the projection objective and a second position that is removed from the object plane.
16. The arrangement according to claim 1, wherein the apparatus for wavefront detection is a multi-channel apparatus for wavefront detection configured to detect, in parallel, wavefronts from plural field points at a given instant in time.
17. The arrangement according to claim 1, wherein the arrangement for microlithography has an operating light source used in operation of the arrangement for microlithography and wherein the measuring system operates with the operating light source at an operating wavelength of the arrangement for microlithography.
18. An arrangement for microlithography comprising:
a projection objective having a plurality of optical elements;
an aberration control circuit controlling imaging properties of the projection objective, the aberration control circuit including a measuring system configured to determine imaging properties of the projection objective; and
at least one operating element associated with an optical element of the projection objective to control imaging properties of the projection objective in response to operating signals generated by the measuring system;
wherein the measuring system is a multi-channel measuring system configured to measure imaging properties of the projection objective in parallel for plural field points at a given instant in time.
19. The arrangement according to claim 18, wherein the at least one operating element is a positioning member configured to change the position of the associated optical element relative to other optical elements of the projection objective.
20. The arrangement according to claim 18, wherein the measuring system includes a diffraction grating.
21. The arrangement according to claim 18, wherein the measuring system is an interferometer.
22. The arrangement according to claim 18, wherein the measuring system comprises:
a wavefront source which produces a wavefront;
a diffraction grating following the wavefront source; and
a spatially resolving detector following the diffraction grating.
23. The arrangement according to claim 22, wherein a plurality of wavefront sources are arranged in front of the diffraction grating.
24. The arrangement according to claim 18, wherein the arrangement for microlithography has an operating light source used in operation of the arrangement for microlithography and wherein the measuring system operates with the operating light source at an operating wavelength of the arrangement for microlithography.
25. An arrangement for microlithography comprising:
a projection objective having a plurality of optical elements;
an aberration control circuit controlling imaging properties of the projection objective, the aberration control circuit including a measuring system configured to determine imaging properties of the projection objective; and
at least one operating element associated with an optical element of the projection objective to control imaging properties of the projection objective in response to operating signals generated by the measuring system;
wherein the measuring system includes a diffraction grating.
26. The arrangement according to claim 25, wherein the diffraction grating has a respective diffracting periodic structure in different periodicity directions.
27. The arrangement according to claim 26, wherein the diffraction grating has two mutually orthogonal periodicity directions.
28. The arrangement according to claim 25, wherein the measuring system is an interferometer.
29. The arrangement according to claim 28, wherein the measuring system is a lateral shearing interferometer, where a lateral shearing of wavefronts is caused by the diffraction grating.
30. The arrangement according to claim 25, wherein the measuring system comprises:
a wavefront source which produces a wavefront;
the diffraction grating following the wavefront source; and
a spatially resolving detector following the diffraction grating.
31. The arrangement according to claim 30, wherein a plurality of wavefront sources are arranged in front of the diffraction grating.
32. The arrangement according to claim 25, wherein the arrangement for microlithography has an operating light source used in operation of the arrangement for microlithography and wherein the measuring system operates with the operating light source at an operating wavelength of the arrangement for microlithography.
33. An arrangement for microlithography comprising:
a projection objective having a plurality of optical elements;
an aberration control circuit controlling imaging properties of the projection objective, the aberration control circuit including a measuring system configured to determine imaging properties of the projection objective; and
at least one operating element associated with an optical element of the projection objective to control imaging properties of the projection objective in response to operating signals generated by the measuring system;
wherein the arrangement for microlithography has an operating light source used in operation of the arrangement for microlithography and wherein the measuring system operates with the operating light source at an operating wavelength of the arrangement for microlithography.
34. The arrangement according to claim 33, wherein the operating light source is an excimer laser.
35. The arrangement according to claim 33, wherein the operating light source is a synchrotron radiator.
36. The arrangement according to claim 33, wherein the measuring system includes a diffraction grating.
37. The arrangement according to claim 33, wherein the measuring system is an interferometer.
38. The arrangement according to claim 33, wherein the measuring system comprises:
a wavefront source which produces a wavefront;
a diffraction grating following the wavefront source; and
a spatially resolving detector following the diffraction grating.
US12/032,623 2000-02-23 2008-02-15 Apparatus for wavefront detection Abandoned US20080144043A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/032,623 US20080144043A1 (en) 2000-02-23 2008-02-15 Apparatus for wavefront detection

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10008181 2000-02-23
DE10008181.9 2000-02-23
US09/792,607 US7333216B2 (en) 2000-02-23 2001-02-23 Apparatus for wavefront detection
US12/032,623 US20080144043A1 (en) 2000-02-23 2008-02-15 Apparatus for wavefront detection

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US09/792,607 Continuation US7333216B2 (en) 2000-02-23 2001-02-23 Apparatus for wavefront detection

Publications (1)

Publication Number Publication Date
US20080144043A1 true US20080144043A1 (en) 2008-06-19

Family

ID=7631918

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/792,607 Expired - Fee Related US7333216B2 (en) 2000-02-23 2001-02-23 Apparatus for wavefront detection
US12/032,623 Abandoned US20080144043A1 (en) 2000-02-23 2008-02-15 Apparatus for wavefront detection

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US09/792,607 Expired - Fee Related US7333216B2 (en) 2000-02-23 2001-02-23 Apparatus for wavefront detection

Country Status (7)

Country Link
US (2) US7333216B2 (en)
EP (1) EP1257882B1 (en)
JP (1) JP5420130B2 (en)
KR (2) KR100785818B1 (en)
DE (2) DE50112329D1 (en)
TW (1) TW550377B (en)
WO (1) WO2001063233A2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090021726A1 (en) * 2002-12-20 2009-01-22 Carl Zeiss Smt Ag Device and method for the optical measurement of an optical system by using an immersion fluid
US20100141959A1 (en) * 2008-12-09 2010-06-10 Kuechel Michael Two grating lateral shearing wavefront sensor
US20110134415A1 (en) * 2006-10-16 2011-06-09 Imagine Optic Method for correcting a wave front analyser and analyser implementing said method
DE102010043498A1 (en) 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projection objective of a microlithographic projection exposure apparatus designed for EUV, and method for optical adjustment of a projection objective
CN102479652A (en) * 2010-11-30 2012-05-30 中国科学院大连化学物理研究所 High-spatial-resolution photoemission electron microscope (PEEM) with ultraviolet or deep ultraviolet laser light source
US8786849B2 (en) 2010-12-09 2014-07-22 Carl Zeiss Smt Gmbh Method for measuring an optical system
US8908192B2 (en) 2010-07-30 2014-12-09 Carl Zeiss Smt Gmbh Method and apparatus for qualifying optics of a projection exposure tool for microlithography
US10042264B2 (en) 2014-03-24 2018-08-07 Carl Zeiss Smt Gmbh Measuring device for determining a polarisation parameter
US10386728B2 (en) 2015-12-22 2019-08-20 Carl Zeiss Smt Gmbh Device and method for wavefront analysis
WO2020247322A1 (en) * 2019-06-03 2020-12-10 Kla Corporation Wave-front aberration metrology of extreme ultraviolet mask inspection systems
US10948833B2 (en) 2017-09-20 2021-03-16 Carl Zeiss Smt Gmbh Wafer holding device and projection microlithography system

Families Citing this family (122)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7266490B2 (en) * 2000-12-28 2007-09-04 Robert Marc Zeidman Apparatus and method for connecting hardware to a circuit simulation
DE10154125A1 (en) 2001-10-25 2003-05-22 Zeiss Carl Semiconductor Mfg System for determination of the imaging quality of an optical imaging system has an electronic object pattern generating device such as a projector or monitor that is used to generate an electronically controllable pattern
AU2003222799A1 (en) 2002-04-15 2003-10-27 Carl Zeiss Smt Ag Interferometric measuring device and projection illumination installation comprising one such measuring device
DE10224363A1 (en) * 2002-05-24 2003-12-04 Zeiss Carl Smt Ag Methods for determining wavefront aberrations
JP2004061515A (en) 2002-07-29 2004-02-26 Cark Zeiss Smt Ag Method and device for determining influence onto polarization state by optical system, and analyzer
DE60332697D1 (en) * 2002-09-30 2010-07-08 Asml Netherlands Bv Lithographic apparatus and a measuring device
DE10258142A1 (en) * 2002-12-04 2004-06-24 Carl Zeiss Smt Ag Device for the optical measurement of an imaging system
DE10258715B4 (en) 2002-12-10 2006-12-21 Carl Zeiss Smt Ag Method for producing an optical imaging system
DE10257766A1 (en) * 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Method for setting a desired optical property of a projection lens and microlithographic projection exposure system
EP1573401A1 (en) * 2002-12-19 2005-09-14 Carl Zeiss SMT AG Method and system for measuring the reproduction quality of an optical reproduction system
US7088458B1 (en) 2002-12-23 2006-08-08 Carl Zeiss Smt Ag Apparatus and method for measuring an optical imaging system, and detector unit
US7027164B2 (en) 2003-01-15 2006-04-11 Asml Holding N.V. Speckle reduction method and system for EUV interferometry
US7268891B2 (en) 2003-01-15 2007-09-11 Asml Holding N.V. Transmission shear grating in checkerboard configuration for EUV wavefront sensor
US6867846B2 (en) * 2003-01-15 2005-03-15 Asml Holding Nv Tailored reflecting diffractor for EUV lithographic system aberration measurement
US7289223B2 (en) 2003-01-31 2007-10-30 Carl Zeiss Smt Ag Method and apparatus for spatially resolved polarimetry
DE10316123A1 (en) 2003-04-04 2004-10-14 Carl Zeiss Smt Ag Phase difference interferometry system for wave front measurement for optical imaging system uses mask structure on object side and grating structure on image side
AU2003281995A1 (en) 2003-04-11 2004-11-01 Carl Zeiss Smt Ag Diffuser, wavefront source, wavefront sensor and projection lighting facility
AU2003233318A1 (en) 2003-05-12 2004-11-26 Carl Zeiss Smt Ag Optical measuring device and operating method for an optical imaging system
WO2005003862A1 (en) 2003-07-05 2005-01-13 Carl Zeiss Smt Ag Device for the polarization-specific examination of an optical system
US7232999B1 (en) * 2003-07-30 2007-06-19 Kestrel Corporation Laser wavefront characterization
WO2005015313A1 (en) 2003-08-04 2005-02-17 Carl Zeiss Smt Ag Illumination mask for range-resolved detection of scattered light
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4154375B2 (en) * 2003-08-29 2008-09-24 エーエスエムエル ホールディング エヌ.ブイ. Speckle reduction method and system for EUV interferometry
DE10343313A1 (en) * 2003-09-10 2004-12-09 Carl Zeiss Smt Ag Mask unit for optical system, especially for device for wave front measurement of microlithographic projection lens, comprises mask structure layer on support which is heat-conducting in region next to mask structure layer
WO2005031466A1 (en) * 2003-09-26 2005-04-07 Carl Zeiss Smt Ag Method of determining optical properties and projection exposure system comprising a wave front detection system
US7119910B1 (en) 2003-10-31 2006-10-10 Carl Zeiss Smt Ag Phase shifting wavefront interference method
US7113255B2 (en) * 2003-12-19 2006-09-26 Asml Holding N.V. Grating patch arrangement, lithographic apparatus, method of testing, device manufacturing method, and device manufactured thereby
DE10360570B4 (en) * 2003-12-22 2006-01-12 Carl Zeiss Optical measuring system and optical measuring method
WO2005069080A2 (en) * 2004-01-16 2005-07-28 Carl Zeiss Smt Ag Device and method for the optical measurement of an optical system, measurement structure support, and microlithographic projection exposure apparatus
JP4545155B2 (en) 2004-01-16 2010-09-15 カール・ツァイス・エスエムティー・アーゲー Optical imaging wavefront measuring apparatus and method, and microlithography projection exposure apparatus
JP4843503B2 (en) * 2004-01-20 2011-12-21 カール・ツァイス・エスエムティー・ゲーエムベーハー Microlithographic projection exposure apparatus and measuring apparatus for projection lens
US7301646B2 (en) * 2004-01-21 2007-11-27 Carl Zeiss Smt Ag Device and method for the determination of imaging errors and microlithography projection exposure system
JP4083751B2 (en) * 2004-01-29 2008-04-30 エーエスエムエル ホールディング エヌ.ブイ. System for calibrating a spatial light modulator array and method for calibrating a spatial light modulator array
US7336371B1 (en) 2004-01-29 2008-02-26 Carl Zeiss Smt Ag Apparatus and method for measuring the wavefront of an optical system
EP1751492A4 (en) * 2004-03-11 2016-07-20 Icos Vision Systems Nv Methods and apparatus for wavefront manipulations and improved 3-d measurements
DE102004020983A1 (en) * 2004-04-23 2005-11-17 Carl Zeiss Smt Ag Process for structuring a substrate uses multiple exposure processes of an adjustable optical system to generate a structured image on the substrate
US7372545B2 (en) * 2004-04-09 2008-05-13 Carl Zeiss Smt Ag Method for adjusting a projection objective
DE102004035595B4 (en) * 2004-04-09 2008-02-07 Carl Zeiss Smt Ag Method for adjusting a projection objective
US20050259269A1 (en) * 2004-05-19 2005-11-24 Asml Holding N.V. Shearing interferometer with dynamic pupil fill
DE102005021151A1 (en) 2004-05-27 2005-12-15 Carl Zeiss Smt Ag Distortion and/or image surface determination method in optical imaging system, involves determining aberration parameter that relates to distortion or image surface, from relation of wavefront aberrations with measured focus offset values
DE102005026628A1 (en) 2004-06-04 2005-12-29 Carl Zeiss Smt Ag Telecenter determination device for microlithography-projection illumination system, has processor unit for determining telecenter error value from wave front tip measuring value that is attained by wave front measuring device
KR101368523B1 (en) 2004-06-04 2014-02-27 칼 짜이스 에스엠테 게엠베하 System for measuring the image quality of an optical imaging system
US20060001890A1 (en) * 2004-07-02 2006-01-05 Asml Holding N.V. Spatial light modulator as source module for DUV wavefront sensor
US7403264B2 (en) * 2004-07-08 2008-07-22 Asml Netherlands B.V. Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus
US7315353B2 (en) * 2004-09-08 2008-01-01 Asml Netherlands B.V. Apodization measurement for lithographic apparatus
US7456933B2 (en) * 2004-09-08 2008-11-25 Carl Zeiss Smt Ag Method for improving the imaging properties of a projection objective for a microlithographic projection exposure apparatus
US7333175B2 (en) * 2004-09-13 2008-02-19 Asml Netherlands, B.V. Method and system for aligning a first and second marker
US7508488B2 (en) 2004-10-13 2009-03-24 Carl Zeiss Smt Ag Projection exposure system and method of manufacturing a miniaturized device
US7262831B2 (en) 2004-12-01 2007-08-28 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method using such lithographic projection apparatus
JP4600047B2 (en) * 2005-01-13 2010-12-15 株式会社ニコン Wavefront aberration measuring method, wavefront aberration measuring apparatus, projection exposure apparatus, and projection optical system manufacturing method
US7375799B2 (en) * 2005-02-25 2008-05-20 Asml Netherlands B.V. Lithographic apparatus
JP2006303370A (en) * 2005-04-25 2006-11-02 Canon Inc Aligner and device manufacturing method using it
WO2007017089A1 (en) * 2005-07-25 2007-02-15 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus
DE102005041203A1 (en) * 2005-08-31 2007-03-01 Carl Zeiss Sms Gmbh Device for interferometric measurement of phase masks used for e.g. lithography, produces phase shifting interferogram to be applied over phase mask by translating coherence mask and/or diffraction grating in X-Y direction
DE102005056914A1 (en) * 2005-11-29 2007-05-31 Carl Zeiss Smt Ag Projection illumination system for use with production of e.g. integrated circuit, has interferometer arrangement examining optical components by measuring radiation that strikes on optical surface at specific angle of incidence
US7459669B2 (en) * 2005-12-30 2008-12-02 Asml Netherlands B.V. Sensor and lithographic apparatus
EP1818658A1 (en) 2006-02-08 2007-08-15 Carl Zeiss SMT AG Method for approximating the influence of an optical system on the state of polarisation of optical radiation
US7660477B2 (en) * 2006-02-28 2010-02-09 Cisco Technology, Inc. Multiple image artifact correction of images for a display having a partially-silvered surface
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
JP2007281003A (en) * 2006-04-03 2007-10-25 Canon Inc Measuring method and device, and exposure device
US7889315B2 (en) 2006-04-13 2011-02-15 Asml Netherlands B.V. Lithographic apparatus, lens interferometer and device manufacturing method
DE102006021797A1 (en) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optical imaging device with thermal damping
US7531774B2 (en) * 2006-06-05 2009-05-12 General Dynamics Advanced Information Systems, Inc. Measurement-diverse imaging and wavefront sensing with amplitude and phase estimation
US7580113B2 (en) * 2006-06-23 2009-08-25 Asml Netherlands B.V. Method of reducing a wave front aberration, and computer program product
US8013977B2 (en) * 2006-07-17 2011-09-06 Asml Netherlands B.V. Lithographic apparatus, radiation sensor and method of manufacturing a radiation sensor
EP1890191A1 (en) * 2006-08-14 2008-02-20 Carl Zeiss SMT AG Catadioptric projection objective with pupil mirror
DE102006039895A1 (en) * 2006-08-25 2008-03-13 Carl Zeiss Smt Ag Method for correcting image changes produced by intensity distributions in optical systems and corresponding optical system
JP4830837B2 (en) * 2006-12-19 2011-12-07 パナソニック株式会社 Lens measuring device
JP2008192855A (en) * 2007-02-05 2008-08-21 Canon Inc Instrumentation device, exposure equipment and manufacturing method of device
CA2835910C (en) * 2007-04-25 2016-06-28 Warner Chilcott Company, Llc Improved vitamin d content uniformity in pharmaceutical dosage forms
US8975599B2 (en) * 2007-05-03 2015-03-10 Asml Netherlands B.V. Image sensor, lithographic apparatus comprising an image sensor and use of an image sensor in a lithographic apparatus
US8237913B2 (en) * 2007-05-08 2012-08-07 Asml Netherlands B.V. Lithographic apparatus and method
US20080278698A1 (en) * 2007-05-08 2008-11-13 Asml Netherlands B.V. Lithographic apparatus and method
JP5303886B2 (en) * 2007-09-26 2013-10-02 株式会社ニコン Optical characteristic measuring apparatus, optical characteristic measuring method, exposure apparatus, exposure method, and device manufacturing method
DE102007054683A1 (en) 2007-11-14 2009-05-28 Carl Zeiss Smt Ag Illumination optics for guiding a radiation bundle of a radiation source in microlithography comprises an optical bundle guiding component arranged between an emission volume and the object field
NL1036279A1 (en) * 2007-12-13 2009-06-16 Asml Netherlands Bv A device for transmission image detection for use in a lithographic projection apparatus and a method for determining third order distortions of a patterning device and / or a projection system or such a lithographic apparatus.
FR2926636B1 (en) * 2008-01-18 2010-09-17 Imagine Optic INSTRUMENT AND METHOD FOR CHARACTERIZING AN OPTICAL SYSTEM
DE102008029970A1 (en) * 2008-06-26 2009-12-31 Carl Zeiss Smt Ag Projection exposure apparatus for microlithography and method for monitoring a lateral imaging stability
DE102008030664A1 (en) 2008-07-01 2010-01-21 Carl Zeiss Smt Ag Optical imaging device with determination of aberrations
DE102008042356A1 (en) 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projection exposure system with optimized adjustment option
DE102009008747B4 (en) * 2009-02-13 2012-02-16 Carl Zeiss Ag Optical imaging system
US20100302523A1 (en) * 2009-05-18 2010-12-02 Nikon Corporation Method and apparatus for measuring wavefront, and exposure method and apparatus
SG173233A1 (en) * 2010-01-28 2011-08-29 Visionxtreme Pte Ltd Inspection of defects in a contact lens
US9389519B2 (en) 2010-02-25 2016-07-12 Nikon Corporation Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method
DE102010064442A1 (en) 2010-07-30 2015-04-02 Carl Zeiss Smt Gmbh Projection objective for an EUV projection exposure system for microlithography
DE102010041556A1 (en) * 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projection exposure apparatus for microlithography and method for microlithographic imaging
WO2012072090A1 (en) 2010-11-29 2012-06-07 Carl Zeiss Smt Gmbh Method of determining a border of an intensity distribution
DE102011005826A1 (en) 2011-03-21 2012-03-29 Carl Zeiss Smt Gmbh Optical device for e.g. extreme UV projection exposure system for manufacturing semiconductor chips, has sensor device comprising sensor line, where sensor device is formed to examine optic during shift of holder for exposure on wafer
DE102011006468B4 (en) * 2011-03-31 2014-08-28 Carl Zeiss Smt Gmbh Measurement of an imaging optical system by overlaying patterns
DE102011007358A1 (en) 2011-04-14 2012-06-06 Carl Zeiss Smt Gmbh Method for operating projection exposure apparatus, involves canceling impact of corrected expansion coefficients on aberrations of image of object, relative to effect of non-correctable expansion coefficients on aberrations of image
DE102011075371A1 (en) 2011-05-05 2012-05-16 Carl Zeiss Smt Gmbh Assembly for projection lens of projection illumination system for microlithography for imaging semiconductor wafer structures, has evaluation device that determines adjusting parameter in degrees of freedom of movement of mask and sensor
DE102011077223B4 (en) 2011-06-08 2013-08-14 Carl Zeiss Smt Gmbh measuring system
CN102243137B (en) * 2011-06-21 2013-04-10 中国科学院上海光学精密机械研究所 Detection device and detection method for optical performance of beam shaping element
DE102011086949A1 (en) 2011-11-23 2013-05-23 Carl Zeiss Smt Gmbh Illumination and displacement device for a projection exposure apparatus
WO2013180187A1 (en) * 2012-05-30 2013-12-05 株式会社ニコン Method and device for measuring wavefront, and exposure method and device
DE102013202372A1 (en) 2013-02-14 2013-12-19 Carl Zeiss Smt Gmbh Method for preparing electromagnetic wave-diffracting structure of wavefront source, involves applying beam of charged or uncharged particles on substrate, and removing material of basic structure on substrate
DE102013101445B9 (en) * 2013-02-14 2022-01-05 Carl Zeiss Smt Gmbh Method for determining distortion properties of an optical system in a measuring device for microlithography
DE102013218991A1 (en) * 2013-09-20 2015-03-26 Carl Zeiss Smt Gmbh Apparatus for determining an optical property of an optical imaging system
DE102013219986A1 (en) 2013-10-02 2015-04-02 Carl Zeiss Smt Gmbh Projection exposure method and projection exposure apparatus for microlithography
US20150116699A1 (en) * 2013-10-31 2015-04-30 Corning Cable Systems Llc Removable device for inspecting polish of an optical fiber endface using a portable camera, and related components, systems, and methods
DE102014209348A1 (en) * 2014-05-16 2015-11-19 Carl Zeiss Smt Gmbh Determination of a corrected size
DE102015201020A1 (en) 2015-01-22 2016-07-28 Carl Zeiss Smt Gmbh Projection exposure apparatus with manipulator and method for controlling a projection exposure apparatus
WO2016184571A2 (en) 2015-05-20 2016-11-24 Carl Zeiss Smt Gmbh Measuring method and measuring arrangement for an imaging optical system
DE102015219330A1 (en) 2015-10-07 2017-04-13 Carl Zeiss Smt Gmbh Method and apparatus for beam analysis
CN105259738A (en) 2015-11-09 2016-01-20 中国科学院上海光学精密机械研究所 Parallel detection device for multiple field point wave aberrations of lithographic projection objective lens and detection method
DE102016212477A1 (en) 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Measuring method and measuring system for the interferometric measurement of the imaging quality of an optical imaging system
DE102016212464A1 (en) * 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Measuring device for determining a wavefront error
DE102016216711A1 (en) * 2016-09-05 2018-03-08 Robert Bosch Gmbh A method for driving an optical phase array, method for detecting an object by means of an optical phase array and optical system
DE102017203376B3 (en) 2017-03-02 2018-05-24 Carl Zeiss Smt Gmbh Measuring device and method for measuring a wavefront error of an imaging optical system and a projection exposure apparatus for microlithography
JP6753342B2 (en) * 2017-03-15 2020-09-09 株式会社島津製作所 Radiation grid detector and X-ray inspection equipment
DE102017217251A1 (en) 2017-09-27 2019-03-28 Carl Zeiss Smt Gmbh Method and device for analyzing the wavefront effect of an optical system
DE102018204626A1 (en) 2018-03-27 2019-04-04 Carl Zeiss Smt Gmbh Illumination mask and method for its production
CN109141825B (en) * 2018-09-13 2019-07-02 西华大学 Subwavelength optics image device focal length measuring equipment and its measurement method
CN110441992B (en) * 2019-07-23 2020-05-05 中国科学院上海光学精密机械研究所 Projection objective wave aberration detection device and detection method
DE102019131327A1 (en) * 2019-11-20 2021-05-20 Carl Zeiss Smt Gmbh Device and method for measuring substrates for semiconductor lithography
CN111103769B (en) 2020-01-02 2021-09-07 中国科学院上海光学精密机械研究所 Projection objective wave aberration detection device insensitive to light intensity fluctuation and detection method
EP3964809A1 (en) * 2020-09-02 2022-03-09 Stichting VU Wavefront metrology sensor and mask therefor, method for optimizing a mask and associated apparatuses
DE102020215540B4 (en) 2020-12-09 2022-07-07 Uwe Schellhorn Method for determining an imaging quality of an imaging system, device and projection exposure system
WO2022156875A1 (en) 2021-01-19 2022-07-28 Carl Zeiss Smt Gmbh A method of setting up a projection exposure system, a projection exposure method and a projection exposure system for microlithography
US11609506B2 (en) 2021-04-21 2023-03-21 Kla Corporation System and method for lateral shearing interferometry in an inspection tool
DE202021103431U1 (en) * 2021-06-28 2021-07-12 Trioptics Gmbh Device for imaging by an optical system to be tested and system for testing an optical system
DE102022208320A1 (en) 2022-08-10 2024-02-15 Carl Zeiss Smt Gmbh Method for operating a measuring system

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904274A (en) * 1973-08-27 1975-09-09 Itek Corp Monolithic piezoelectric wavefront phase modulator
US3923400A (en) * 1974-01-03 1975-12-02 Itek Corp Real-time wavefront correction system
US4246485A (en) * 1978-03-22 1981-01-20 Ciba-Geigy Aktiengesellschaft X-ray intensifying screens
US4399356A (en) * 1981-01-19 1983-08-16 Adaptive Optics Associates, Inc. Optical wavefront sensing system
US4914284A (en) * 1987-10-29 1990-04-03 Messerschmitt-Boelkow-Blohm Gmbh Optical wide angle sensor head
US4953981A (en) * 1989-08-03 1990-09-04 The United States Of America As Represented By The Secretary Of The Army Lateral-shearing electro-optic field sensor
US5357311A (en) * 1991-02-25 1994-10-18 Nikon Corporation Projection type light exposure apparatus and light exposure method
US5715039A (en) * 1995-05-19 1998-02-03 Hitachi, Ltd. Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns
US5805273A (en) * 1994-04-22 1998-09-08 Canon Kabushiki Kaisha Projection exposure apparatus and microdevice manufacturing method
US5822066A (en) * 1997-02-26 1998-10-13 Ultratech Stepper, Inc. Point diffraction interferometer and pin mirror for use therewith
US5978085A (en) * 1997-03-07 1999-11-02 Litel Instruments Apparatus method of measurement and method of data analysis for correction of optical system
US6011624A (en) * 1998-01-06 2000-01-04 Zygo Corporation Geometrically-Desensitized interferometer with adjustable range of measurement depths
US6087053A (en) * 1997-05-09 2000-07-11 Canon Kabushiki Kaisha Device manufacturing method with transfer magnification adjustment to correct thermal distortion of substrate
US6111646A (en) * 1999-01-12 2000-08-29 Naulleau; Patrick Null test fourier domain alignment technique for phase-shifting point diffraction interferometer
US6118525A (en) * 1995-03-06 2000-09-12 Ade Optical Systems Corporation Wafer inspection system for distinguishing pits and particles
US6312373B1 (en) * 1998-09-22 2001-11-06 Nikon Corporation Method of manufacturing an optical system
US6382793B1 (en) * 2000-05-20 2002-05-07 Carl Zeiss, Inc. Method and apparatus for measuring a wavefront
US7236254B2 (en) * 1999-03-24 2007-06-26 Canon Kabushiki Kaisha Exposure apparatus with interferometer

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829219A (en) * 1973-03-30 1974-08-13 Itek Corp Shearing interferometer
DE3020022A1 (en) 1980-05-24 1981-12-03 Ibm Deutschland Gmbh, 7000 Stuttgart METHOD AND DEVICE FOR TESTING OPTICAL IMAGING SYSTEMS
US4413909A (en) * 1981-06-01 1983-11-08 Lockheed Missiles & Space Co., Inc. Wavefront tilt measuring apparatus
JPS5816216A (en) * 1981-07-22 1983-01-29 Canon Inc Talbot interferometer
US4518854A (en) * 1982-06-17 1985-05-21 Itek Corporation Combined shearing interferometer and Hartmann wavefront sensor
JPH03134538A (en) * 1989-10-19 1991-06-07 Matsushita Electric Ind Co Ltd Evaluating apparatus of lens
JPH04106449A (en) * 1990-08-27 1992-04-08 Olympus Optical Co Ltd Measuring apparatus of distortion of lens
DE4124223C2 (en) * 1991-07-22 2001-07-26 Zeiss Carl Procedure for evaluating interferograms and interferometers
FR2712978B1 (en) * 1993-11-24 1996-02-02 Onera (Off Nat Aerospatiale) Achromatic optical interferometer, of the trilateral shift type.
JP3405620B2 (en) * 1995-05-22 2003-05-12 松下電器産業株式会社 Solid-state imaging device
FR2737568B1 (en) * 1995-08-02 1997-09-26 Essilor Int APPARATUS AND METHOD FOR FRINGE DEFLECTOMETRY
JP3417736B2 (en) * 1995-08-29 2003-06-16 ペンタックス株式会社 Optical member inspection device
DE19538747A1 (en) 1995-10-18 1997-04-24 Johannes Prof Dr Schwider Planar wavefront aberration measuring method for coherent light source in gitter shear interferometer
US6124974A (en) * 1996-01-26 2000-09-26 Proxemics Lenslet array systems and methods
JPH10132707A (en) * 1996-09-05 1998-05-22 Topcon Corp Concealed mark observer and lens meter
US5835217A (en) * 1997-02-28 1998-11-10 The Regents Of The University Of California Phase-shifting point diffraction interferometer
DE19826409C2 (en) * 1998-06-15 2000-07-13 Gms Frank Optic Products Gmbh Method and device for measuring the radiation characteristics of radiation sources
US6307635B1 (en) * 1998-10-21 2001-10-23 The Regents Of The University Of California Phase-shifting point diffraction interferometer mask designs
US6118535A (en) * 1999-06-02 2000-09-12 Goldberg; Kenneth Alan In Situ alignment system for phase-shifting point-diffraction interferometry
US6151115A (en) * 1999-07-26 2000-11-21 Naulleau; Patrick Phase-shifting point diffraction interferometer focus-aid enhanced mask
US6304330B1 (en) * 1999-10-06 2001-10-16 Metrolaser, Inc. Methods and apparatus for splitting, imaging, and measuring wavefronts in interferometry
AU2002224059A1 (en) 2000-11-27 2002-06-03 Nikon Corporation Method and apparatus for measuring aberration of projection optical system, and method and apparatus for exposure

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904274A (en) * 1973-08-27 1975-09-09 Itek Corp Monolithic piezoelectric wavefront phase modulator
US3923400A (en) * 1974-01-03 1975-12-02 Itek Corp Real-time wavefront correction system
US4246485A (en) * 1978-03-22 1981-01-20 Ciba-Geigy Aktiengesellschaft X-ray intensifying screens
US4399356A (en) * 1981-01-19 1983-08-16 Adaptive Optics Associates, Inc. Optical wavefront sensing system
US4914284A (en) * 1987-10-29 1990-04-03 Messerschmitt-Boelkow-Blohm Gmbh Optical wide angle sensor head
US4953981A (en) * 1989-08-03 1990-09-04 The United States Of America As Represented By The Secretary Of The Army Lateral-shearing electro-optic field sensor
US5357311A (en) * 1991-02-25 1994-10-18 Nikon Corporation Projection type light exposure apparatus and light exposure method
US5805273A (en) * 1994-04-22 1998-09-08 Canon Kabushiki Kaisha Projection exposure apparatus and microdevice manufacturing method
US6118525A (en) * 1995-03-06 2000-09-12 Ade Optical Systems Corporation Wafer inspection system for distinguishing pits and particles
US5715039A (en) * 1995-05-19 1998-02-03 Hitachi, Ltd. Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns
US5822066A (en) * 1997-02-26 1998-10-13 Ultratech Stepper, Inc. Point diffraction interferometer and pin mirror for use therewith
US5978085A (en) * 1997-03-07 1999-11-02 Litel Instruments Apparatus method of measurement and method of data analysis for correction of optical system
US6087053A (en) * 1997-05-09 2000-07-11 Canon Kabushiki Kaisha Device manufacturing method with transfer magnification adjustment to correct thermal distortion of substrate
US6011624A (en) * 1998-01-06 2000-01-04 Zygo Corporation Geometrically-Desensitized interferometer with adjustable range of measurement depths
US6312373B1 (en) * 1998-09-22 2001-11-06 Nikon Corporation Method of manufacturing an optical system
US6111646A (en) * 1999-01-12 2000-08-29 Naulleau; Patrick Null test fourier domain alignment technique for phase-shifting point diffraction interferometer
US7236254B2 (en) * 1999-03-24 2007-06-26 Canon Kabushiki Kaisha Exposure apparatus with interferometer
US6382793B1 (en) * 2000-05-20 2002-05-07 Carl Zeiss, Inc. Method and apparatus for measuring a wavefront

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090257049A1 (en) * 2002-12-20 2009-10-15 Carl Zeiss Smt Ag Device and method for the optical measurement of an optical system by using an immersion fluid
US8120763B2 (en) 2002-12-20 2012-02-21 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
US20090021726A1 (en) * 2002-12-20 2009-01-22 Carl Zeiss Smt Ag Device and method for the optical measurement of an optical system by using an immersion fluid
US8836929B2 (en) 2002-12-20 2014-09-16 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
US8725447B2 (en) * 2006-10-16 2014-05-13 Imagine Optic Method for correcting a wave front analyser and analyser implementing said method
US20110134415A1 (en) * 2006-10-16 2011-06-09 Imagine Optic Method for correcting a wave front analyser and analyser implementing said method
US20100141959A1 (en) * 2008-12-09 2010-06-10 Kuechel Michael Two grating lateral shearing wavefront sensor
US7889356B2 (en) * 2008-12-09 2011-02-15 Zygo Corporation Two grating lateral shearing wavefront sensor
US8908192B2 (en) 2010-07-30 2014-12-09 Carl Zeiss Smt Gmbh Method and apparatus for qualifying optics of a projection exposure tool for microlithography
WO2012059537A1 (en) 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projection objective of a microlithographic exposure apparatus
DE102010043498A1 (en) 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projection objective of a microlithographic projection exposure apparatus designed for EUV, and method for optical adjustment of a projection objective
US9720329B2 (en) 2010-11-05 2017-08-01 Carl Zeiss Smt Gmbh Projection objective of a microlithographic projection exposure apparatus
CN102479652A (en) * 2010-11-30 2012-05-30 中国科学院大连化学物理研究所 High-spatial-resolution photoemission electron microscope (PEEM) with ultraviolet or deep ultraviolet laser light source
US8786849B2 (en) 2010-12-09 2014-07-22 Carl Zeiss Smt Gmbh Method for measuring an optical system
US10042264B2 (en) 2014-03-24 2018-08-07 Carl Zeiss Smt Gmbh Measuring device for determining a polarisation parameter
US10386728B2 (en) 2015-12-22 2019-08-20 Carl Zeiss Smt Gmbh Device and method for wavefront analysis
US10948833B2 (en) 2017-09-20 2021-03-16 Carl Zeiss Smt Gmbh Wafer holding device and projection microlithography system
WO2020247322A1 (en) * 2019-06-03 2020-12-10 Kla Corporation Wave-front aberration metrology of extreme ultraviolet mask inspection systems

Also Published As

Publication number Publication date
TW550377B (en) 2003-09-01
JP5420130B2 (en) 2014-02-19
JP2003524175A (en) 2003-08-12
EP1257882B1 (en) 2007-04-11
WO2001063233A2 (en) 2001-08-30
KR100785818B1 (en) 2007-12-13
US7333216B2 (en) 2008-02-19
US20020001088A1 (en) 2002-01-03
KR100829091B1 (en) 2008-05-19
DE50112329D1 (en) 2007-05-24
EP1257882A2 (en) 2002-11-20
KR20020077433A (en) 2002-10-11
DE10109929A1 (en) 2001-11-22
KR20070087236A (en) 2007-08-27
WO2001063233A3 (en) 2001-12-13

Similar Documents

Publication Publication Date Title
US7333216B2 (en) Apparatus for wavefront detection
US6765683B2 (en) Interferometer system and method of manufacturing projection optical system using same
US7307707B2 (en) Method and system for measuring the imaging quality of an optical imaging system
JP5307728B2 (en) Measuring device and measuring method of irradiation intensity distribution
US7388696B2 (en) Diffuser, wavefront source, wavefront sensor and projection exposure apparatus
JP4545155B2 (en) Optical imaging wavefront measuring apparatus and method, and microlithography projection exposure apparatus
US6111646A (en) Null test fourier domain alignment technique for phase-shifting point diffraction interferometer
JP2004061515A (en) Method and device for determining influence onto polarization state by optical system, and analyzer
US20170284893A1 (en) Optical device
JP2008135745A (en) Wave front aberration measuring device and projection aligner
US6559952B1 (en) System for interferometric distortion measurements that define an optical path
Mercere et al. X-ray beam metrology and X-ray optic alignment by Hartmann wavefront sensing
TWI769545B (en) Method for measuring a reflectivity of an object for measurement light and metrology system for carrying out the method
Mercère et al. Hartmann and Shack–Hartmann wavefront sensors for sub-nanometric metrology
KR20220121669A (en) Inspection device and measurement method of wavefront aberration
Tan et al. At-Wavelength Metrology of EUV Cameras using Lateral-Shearing Interferometry
Tan et al. At‐wavelength metrology of 13 nm lithography imaging optics
Ray-Chaudhuri et al. EUV metrology of multilayer optics
MacDowell et al. Interferometric testing of euv lithography cameras

Legal Events

Date Code Title Description
AS Assignment

Owner name: CARL ZEISS SMT AG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:FREISCHLAD, KLAUS;REEL/FRAME:022679/0441

Effective date: 20090228

AS Assignment

Owner name: CARL ZEISS SMT GMBH, GERMANY

Free format text: A MODIFYING CONVERSION;ASSIGNOR:CARL ZEISS SMT AG;REEL/FRAME:025763/0367

Effective date: 20101014

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION