US20080134957A1 - Powder metallurgy crucible for aluminum nitride crystal growth - Google Patents
Powder metallurgy crucible for aluminum nitride crystal growth Download PDFInfo
- Publication number
- US20080134957A1 US20080134957A1 US11/728,027 US72802707A US2008134957A1 US 20080134957 A1 US20080134957 A1 US 20080134957A1 US 72802707 A US72802707 A US 72802707A US 2008134957 A1 US2008134957 A1 US 2008134957A1
- Authority
- US
- United States
- Prior art keywords
- crucible
- grains
- layer
- wall structure
- hafnium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
Definitions
- the present invention relates generally to III-nitride semiconductors and more particularly to crucibles for growing III-nitride semiconductor substrates such as aluminum nitride (AlN).
- III-nitride semiconductor substrates such as aluminum nitride (AlN).
- AlN aluminum nitride
- Use of the crucible of this invention may enable the growth of relatively large and high quality III-nitride single crystals.
- Wide bandgap semiconductor devices based on III-nitride semiconductors, are expected to find application in several opto-electronic technologies in the areas of short wavelength emission and detection.
- Aluminum nitride and high aluminum concentration alloys of aluminum nitride with gallium nitride and/or with indium nitride are potentially important III-nitride semiconductors for producing deep-UV light emitting diodes with potential applications including solid-state white lighting, sterilization and disinfectant devices, compact analytical devices for the biotechnology and pharmaceutical markets, bioagent detection systems, compact uv light sources for covert communication by the Department of Defense, and for short wavelength lasers for high density data storage.
- single-crystal substrates of aluminum nitride are attractive for the fabrication of III-nitride semiconductor, high power radio frequency, millimeter wave, and microwave devices needed for future wireless communication base stations and for Department of Defense applications.
- one of the factors limiting the maturation of aluminum nitride, and other III-nitride, technology has been the absence of high-quality bulk nitride substrates.
- One aspect of the present invention includes a sealable crucible for growing a III-nitride semiconductor crystal.
- the crucible includes a wall structure defining an interior crystal growth cavity and includes a plurality of grains.
- the wall structure has a thickness dimension extending in a direction substantially perpendicular to the longitudinal direction, the thickness dimension being at least about 1.5 times the average grain size.
- this invention in another aspect, includes a sealable crucible for growing a III-nitride semiconductor crystal.
- the crucible includes an elongated wall structure extending in a longitudinal direction.
- the wall structure defines an interior crystal growth cavity and includes a plurality of grains.
- the grains effectively form at least first and second layers, the first layer including grains disposed on an inside surface of the crucible and the second layer being adjacent to the first layer.
- this invention includes a method for fabricating a crucible for use in growing aluminum nitride single crystals.
- the method includes providing a bar of powder metallurgy material and machining an elongated wall structure extending in a longitudinal direction.
- the wall structure defines an interior crystal growth cavity and includes a plurality of grains.
- the grains effectively form at least first and second layers, the first layer including grains disposed on an inside surface of the crucible and the second layer being adjacent to the first layer.
- this invention includes a method for fabricating an aluminum nitride single crystal.
- the method includes providing a crucible having an elongated wall structure extending in a longitudinal direction; the wall structure defining an interior crystal growth cavity and including a plurality of grains, which effectively form at least first and second layers, the first layer including grains disposed on an inside surface of the crucible and the second layer being adjacent the first layer.
- the method further includes charging the crucible with aluminum nitride, sealing the crucible, and heating at least a portion of the crucible to a temperature in excess of about 2000 degrees C.
- FIG. 1 is a cross-sectional schematic representation of a prior-art thin wall crucible
- FIG. 2A is a cross-sectional schematic representation of a portion of the crucible of FIG. 1 prior to grain growth;
- FIG. 2B is a cross-sectional schematic representation of the portion of the crucible shown in FIG. 2A after exposure to Al vapor at growth temperatures;
- FIG. 3A is a view similar to that of FIG. 2A , of a portion of a crucible of this invention prior to grain growth;
- FIG. 3B is a cross sectional schematic representation of the portion of the crucible shown in FIG. 3A after exposure to Al vapor at growth temperatures.
- the present invention includes a crucible that may be useful in growing relatively large aluminum nitride and/or other III-nitride single crystals for use in semiconductor applications.
- a tungsten crucible is described in this particular example. This is for illustrative purposes only and those skilled in the art will recognize the detailed description provided herein could be applied in a straightforward fashion to various other crucible materials such as described with respect to alternate embodiments described herein.
- the tungsten crucible 100 of this invention includes a wall structure having a thickness 126 that is at least about 1.5 times, and preferably greater than about 3 times, that of the average tungsten grain 122 .
- the tungsten crucible 100 is formed using powder metallurgy techniques.
- the crucible of the present invention may advantageously provide for the growth of relatively large III-nitride single crystals, and in particular may provide for the growth of AlN single crystals having a diameter in the range from about 20 to about 50 mm or greater. AlN crystals of this size may be advantageously used to fabricate relatively high quality nitride semiconductor devices with relatively better yield than prior-art approaches.
- prior-art crucible 10 typically includes a cylindrical body portion 12 and a tapered conical end portion 14 and is used in a tungsten tube furnace such as that shown in the above-referenced Slack and McNelly (“AlN Single Crystals”).
- Slack and McNelly AlN Single Crystals
- the sharp tip 16 of the crucible is placed in the nominal center of the furnace at the start of run with a charge of AlN (e.g., about 5 grams) placed at the opposite end 18 of the crucible 10 .
- the crucible 10 is rotated (e.g., at about 2 revolutions per hour) about its longitudinal axis 15 and simultaneously pushed through the hot zone (i.e., the center) of the tube furnace (with end 18 moving towards tip 16 ) at a rate of about 0.3 mm per hour.
- the center of the furnace is held at a temperature of about 2250 degrees C. during the duration of the run.
- the total running time may be on the order of 100 hours or more.
- these conventional crucibles 10 are formed by a chemical vapor deposition process (CVD).
- CVD chemical vapor deposition process
- crucibles 10 formed by a CVD process may be characterized as having a columnar grain structure in which the W grains 22 are disposed substantially perpendicular to the inner wall 24 of the crucible 10 and extend substantially the entire thickness 26 of the crucible wall 20 (i.e., from the inner wall 24 to the outer wall 25 ).
- crucible 10 tends to develop pinhole leaks 30 at the grain boundaries 32 ( FIG. 2A ) thereof, which disadvantageously permit aluminum vapor to escape from the interior of the crucible 10 .
- the pinhole leaks 30 also generally lead to crucible failure which thus limits the maximum achievable crystal size.
- One aspect of this invention is the realization that the above-described pinhole leak problem may be related to swelling of the tungsten grains 22 caused by the absorption of aluminum during use. Measurements conducted by the inventors have shown that after growth at 2330 degrees C. the tungsten crucible contained 5.3 atom percent aluminum in solid solution (which is approximately equivalent to the saturation value of aluminum in tungsten at that temperature). At this aluminum concentration, the lattice constant was measured to decrease slightly to 3.162 angstroms from 3.165 angstroms for pure tungsten (with aluminum atoms substitutionally replacing tungsten atoms in the lattice). Thus the absorption of aluminum should theoretically result in swelling of slightly less than 5.3 volume percent, which was corroborated by an observed swelling of about 5 volume percent.
- the swelling results in pinhole 30 formation, particularly at the triple points where three tungsten grains 22 meet. Since the grains 22 of the CVD tungsten crucibles 10 are columnar and extend the thickness 26 of the crucible wall 20 , the pinholes 30 likewise extend the thickness 26 of the crucible wall 20 .
- FIGS. 3A and 3B a cross sectional schematic illustration of the tungsten grain 122 structure of the crucible 100 of the present invention is illustrated.
- Crucible 100 is substantially similar to crucible 10 ( FIG. 1 ) in that it may include a cylindrical body portion 12 ( FIG. 1 ) and a tapered conical end portion 14 ( FIG. 1 ).
- Crucible 100 differs from that of crucible 10 in that it utilizes a granular, multigrain structure in which the thickness 126 of the crucible wall is at least 1.5 times that of the average grain diameter.
- the grain structure of this invention may also be thought of as including at least two layers, a first layer 144 adjacent to (or forming) the inner wall 124 of the crucible 100 and a second layer 145 adjacent to the first layer 144 . While not wishing to be bound by a particular theory it is believed that the present invention uses the normally deleterious effects of the grain swelling to advantage, to nominally block grain boundary diffusion. It is believed that once swelling has occurred along grain boundaries 132 of the first grain layer 144 , further diffusion is severely hampered by the second grain layer 145 , grains of which have swollen to effectively close off any diffusion pathways or pinholes along the grain boundaries of the first layer 144 . Thus, any further diffusion of aluminum into the walls of the crucible generally occurs only by relatively slow bulk diffusion.
- the three-dimensional, substantially random arrangement of the grains 122 is believed to slow the formation of pinholes in any of the layers. Nevertheless, aluminum transport through any pinholes that may be formed in the first layer 144 of tungsten grains 122 is nominally sealed off by the second layer 145 (or subsequent layers) thereof.
- One method of implementing this invention is to machine crucibles from a tungsten bar formed using powder metallurgy techniques.
- These powder metallurgy bars include tungsten grains having substantially no columnar grain structure. As stated above, this structure is believed to reduce the penetration rate of aluminum along the grain boundaries and its subsequent escape from the crucible, particularly after the tungsten grains have swelled due to the uptake of Al by bulk in-diffusion.
- Crucibles formed by the above described powder metallurgy technique have been demonstrated to exhibit a significantly longer life than would be expected simply by the increased wall thickness, indicating that the granular structure slows the permeation of aluminum through the crucible walls.
- One such possible approach may be to fabricate crucibles using multiple CVD steps while using an agent between steps that disrupts further columnar growth of the individual tungsten grains.
- the crucible of the present invention may be useful in fabricating III-nitride single crystals such as aluminum nitride for the electronics and opto-electronics applications.
- the inventive crucible may be used in a tube furnace, such as that disclosed by Slack and McNelly as referenced hereinabove.
- the crucible is typically first charged with relatively pure aluminum nitride (e.g., greater than about 99%) and then sealed before inserting into the tube furnace. At least a portion of the crucible is heated to a temperature in excess of about 2000 degrees C. at which aluminum nitride crystal formation is favored.
- the crucibles of the present invention have been demonstrated to successfully grow AlN crystals having a diameter of up to 20 mm and greater. Moreover, the powder metallurgy tungsten crucibles of this invention may be used to grow AlN crystals having a diameter of up to 50 mm or greater. As described hereinabove, AlN crystals of this size may be advantageously used in the fabrication of relatively high quality nitride semiconductor devices with relatively better yield than prior approaches.
- tungsten crucibles are subjected to a sealing process through grain swelling with metals other than aluminum.
- metals other than aluminum For example, Be, Cr, Pd, Ti, Pt, Rh, Ru, and V each have high temperature solubilities in tungsten (S. V. Nagender Naidu and P. Rama Rao, Editors, Phase Diagrams of Binary Tungsten Alloys , Indian Institute of Metals, Calcutta, (1991)). Thus they would be expected to swell the tungsten grains and nominally stop further grain boundary diffusion of the chosen metal or, on later reheating, of Al in the crucible of this invention.
- Metals with somewhat lower solid solubility in tungsten may also be effectively contained b y grain swelling although the solid solubility of Fe in tungsten is less than three percent. It may also be possible to fabricate crucibles out of metals other than tungsten in which the solid solubility of the metal contained by the crucible causes the grains of the crucible to swell and thus impede further grain boundary diffusion of the metal contained therein.
- tungsten crucibles One disadvantage of tungsten crucibles is that pure tungsten tends to be quite brittle and, as a result, is difficult to machine. Accordingly, alternate embodiments of the present invention may be provided, which are substantially similar to crucible 100 described hereinabove, though fabricated from various materials other than tungsten.
- crucibles may be fabricated from tungsten-rhenium (W—Re) alloys, which tend to be much less brittle thus useful in situations where some machinability or flexibility is desired.
- W—Re tungsten-rhenium
- Pure tungsten has a body-centered-cubic crystal structure and W—Re alloys will have nominally the same crystal structure up to 37 atom % rhenium.
- Aluminum atoms diffused into such W—Re alloy grains will produce the desired grain swelling and reduced grain boundary diffusion as described above.
- W—Re polycrystalline alloy crucibles may be employed for growing AlN crystals. Since the W—Re mixed crystal grains have a melting point lower than that of pure tungsten, these crucibles may be limited to AlN crystal growth temperatures lower than those used for pure W.
- the upper use temperature in a particular implementation is, for example, about 2350° C. for a pure tungsten crucible, then one would expect the upper growth temperature to be limited to about 2000° C. for a crucible fabricated from tungsten containing 37 atom % rhenium in an otherwise similar implementation.
- Other embodiments may include crucibles fabricated from polycrystalline rhenium (Re), which has a hexagonal-close-packed crystal structure.
- Aluminum atoms are also substitutionally soluble in rhenium at high temperature, and may be used to eliminate porosity in polycrystalline rhenium by using a multilayer grain structure.
- the first (e.g., inner) layer of Re grains will also swell as described above, sealing off the later (e.g., outer) layers of grains.
- Still further embodiments include crucibles fabricated from polycrystalline tantalum monocarbide, (TaC). These crucibles would also be chemically stable in the presence of AlN and in a nitrogen atmosphere of up to 100 bars at 2300° C. Thus, crucibles of TaC may be useful for growing AlN. However, polycrystalline crucibles of TaC would generally be slightly porous and Al vapor will leak out of them during growth unless a multilayer grain structure is used such as described hereinabove.
- One way the present invention may be applied to these crucibles is by fabricating them using a powder mixture of TaC with added Ta 2 C.
- a pressed and sintered crucible using powder metallurgy, may be made from about 10 volume percent of Ta 2 C added to the TaC.
- the Ta 2 C will convert to TaC and will increase its volume by about 7.5% so that it would eliminate about 0.75 volume percent of porosity in the finished crucible.
- Employing a 50 volume percent TaC plus 50 volume percent Ta 2 C would enable one to fully eliminate about 3.8% volume percent porosity in the sintered body.
- tantalum (Ta) metal powder may be added to the TaC powder mixture at the start of the powder metallurgy process. This Ta metal will expand by about 23% in volume when converted to TaC. Thus, less second-phase material is required to make a dense TaC crucible body. Such dense, multi-grain crucibles may be very useful for growing AlN crystals as described herein.
- Still further embodiments include crucibles of polycrystalline Ta 2 N, which may be used for growing AlN crystals at temperatures up to about 2300° C. (depending on the Ta 2 N/AlN eutectic temperature).
- Useful crucibles may be formed by using powder metallurgy starting with a mixture of Ta 2 N powder and Ta metal powder. In particular examples, after pressing and sintering, these crucibles should be heated in about 0.1 to 10 bars of N 2 gas at 2000° C. before use. During this heat treatment, the Ta powder grains will be converted to Ta 2 N and will expand by about 9.5% in volume. Thus, residual porosity in such crucibles may be nominally eliminated before being used to grow AlN crystals. Moreover, use of multilayer grain structures, such as described hereinabove, will dramatically reduce Al diffusion along the grain boundaries through the crucible walls allowing large AlN crystals to be grown.
- crucibles of polycrystalline hafnium nitride may also be used for growing AlN crystals up to temperatures of about 2300° C.
- These powder metallurgy crucibles may be made from a mixture of HfN powder and hafnium (Hf) metal powder. If such crucibles are heated in 0.1 to 10 bars of N 2 gas at 2000° C. before use, the Hf powder grains will be converted to HfN and will expand by approximately 7.3% in volume during the process. Thus, residual porosity in such crucibles may be nominally eliminated before use for growing AlN crystals.
- these crucibles may be fabricated with multilayer grain structures, to retard Al diffusion along the grain boundaries through the crucible walls allowing large AlN crystals to be grown.
- Other embodiments include powder metallurgy crucibles fabricated from a mixture of W and Ta powders. These two metals are mutually miscible in all proportions to form homogeneous alloys.
- a crucible made from an alloy of, for example, 3 atom percent Ta may be formed.
- a range of Ta contents from 0.5 to 10 atom percent are also possible.
- Ta 2 N clusters have a hexagonal-close packed crystal structure and will precipitate out at the grain boundaries in the body-centered-cubic W. Thus, they will act as grain-growth inhibitors keeping the grain size of the W grains relatively small.
- This small-grain-structure is useful when the crucibles are exposed to Al vapor in the growth of AlN crystals. Such small grains rapidly become saturated with aluminum and thus expand to stop the grain-boundary transport of aluminum, e.g., when in a multilayer construction as discussed hereinabove.
- Such W—Ta crucibles should self-seal more rapidly than pure W crucibles, and thus be better for growing AlN crystals.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.5 times the average grain size. In particular embodiments, the crucible includes first and second layers of grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be fabricated from tungsten-rhenium (W—Re) alloys; rhenium (Re); tantalum monocarbide (TaC); tantalum nitride (Ta2N); hafnium nitride (HfN); a mixture of tungsten and tantalum (W—Ta); tungsten (W); and combinations thereof.
Description
- This application claims the benefit of U.S. Provisional Application Ser. No. 60/323,947, entitled Powder Metallurgy Tungsten Crucible for AlN Crystal Growth, filed Sep. 21, 2001.
- Part of the work leading to this invention was made under a United States Government STTR Contract (N00014-97-C-0362). The U.S. Government may have certain rights in this invention.
- (1) Field of the Invention
- The present invention relates generally to III-nitride semiconductors and more particularly to crucibles for growing III-nitride semiconductor substrates such as aluminum nitride (AlN). Use of the crucible of this invention may enable the growth of relatively large and high quality III-nitride single crystals.
- (2) Background Information
- Wide bandgap semiconductor devices, based on III-nitride semiconductors, are expected to find application in several opto-electronic technologies in the areas of short wavelength emission and detection. Aluminum nitride and high aluminum concentration alloys of aluminum nitride with gallium nitride and/or with indium nitride are potentially important III-nitride semiconductors for producing deep-UV light emitting diodes with potential applications including solid-state white lighting, sterilization and disinfectant devices, compact analytical devices for the biotechnology and pharmaceutical markets, bioagent detection systems, compact uv light sources for covert communication by the Department of Defense, and for short wavelength lasers for high density data storage. In addition, single-crystal substrates of aluminum nitride are attractive for the fabrication of III-nitride semiconductor, high power radio frequency, millimeter wave, and microwave devices needed for future wireless communication base stations and for Department of Defense applications. However, one of the factors limiting the maturation of aluminum nitride, and other III-nitride, technology has been the absence of high-quality bulk nitride substrates.
- One promising method for the growth of aluminum nitride single crystals for such substrates is the sublimation-recondensation technique first developed by Slack and McNelly (“Growth of High Purity AlN Crystals”, J. Cryst. Growth 34, 263 (1976) and “AlN Single Crystals”, J. Cryst. Growth 42, 560 (1977)), both of which are fully incorporated by reference herein. However, one of the drawbacks that limited the maximum size of the crystals was the development of leaks in the tungsten crucibles, which ultimately lead to the failure thereof, through which aluminum gas may escape. The development of crucibles that substantially eliminate this problem may provide for the growth of relatively large aluminum nitride single crystals. The need for improved crucibles for the growth of aluminum nitride single crystals has also been published, subsequent to the priority date of embodiments of the present invention, by other groups: “Properties of Crucible Materials for Bulk Growth of AlN,” G. A. Slack, J. Whitlock, K. Morgan, and L. J. Schowalter, Materials Research Society Proc. Vol. 798, p. Y10.74.1 (2004); “Crucible Selection in AlN Bulk Crystal Growth,” R. Dalmau, B. Raghothamachar, M. Dudley, R. Schlesser, and Z. Sitar, Materials Research Society Proc. Vol. 798, p. Y2.9.1 (2004); and “Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality,” B. M. Epelbaum, D. Hofmann, M. Bickermann, A. Winnacker, Mater. Sci. Forum 389-393, 1445 (2002).
- Therefore there exists a need for an improved crucible for growth of III-nitride.
- One aspect of the present invention includes a sealable crucible for growing a III-nitride semiconductor crystal. The crucible includes a wall structure defining an interior crystal growth cavity and includes a plurality of grains. The wall structure has a thickness dimension extending in a direction substantially perpendicular to the longitudinal direction, the thickness dimension being at least about 1.5 times the average grain size.
- In another aspect, this invention includes a sealable crucible for growing a III-nitride semiconductor crystal. The crucible includes an elongated wall structure extending in a longitudinal direction. The wall structure defines an interior crystal growth cavity and includes a plurality of grains. The grains effectively form at least first and second layers, the first layer including grains disposed on an inside surface of the crucible and the second layer being adjacent to the first layer.
- In still another aspect, this invention includes a method for fabricating a crucible for use in growing aluminum nitride single crystals. The method includes providing a bar of powder metallurgy material and machining an elongated wall structure extending in a longitudinal direction. The wall structure defines an interior crystal growth cavity and includes a plurality of grains. The grains effectively form at least first and second layers, the first layer including grains disposed on an inside surface of the crucible and the second layer being adjacent to the first layer.
- In yet another aspect, this invention includes a method for fabricating an aluminum nitride single crystal. The method includes providing a crucible having an elongated wall structure extending in a longitudinal direction; the wall structure defining an interior crystal growth cavity and including a plurality of grains, which effectively form at least first and second layers, the first layer including grains disposed on an inside surface of the crucible and the second layer being adjacent the first layer. The method further includes charging the crucible with aluminum nitride, sealing the crucible, and heating at least a portion of the crucible to a temperature in excess of about 2000 degrees C.
-
FIG. 1 is a cross-sectional schematic representation of a prior-art thin wall crucible; -
FIG. 2A is a cross-sectional schematic representation of a portion of the crucible ofFIG. 1 prior to grain growth; -
FIG. 2B is a cross-sectional schematic representation of the portion of the crucible shown inFIG. 2A after exposure to Al vapor at growth temperatures; -
FIG. 3A is a view similar to that ofFIG. 2A , of a portion of a crucible of this invention prior to grain growth; and -
FIG. 3B is a cross sectional schematic representation of the portion of the crucible shown inFIG. 3A after exposure to Al vapor at growth temperatures. - Referring briefly to
FIGS. 3A and 3B , the present invention includes a crucible that may be useful in growing relatively large aluminum nitride and/or other III-nitride single crystals for use in semiconductor applications. A tungsten crucible is described in this particular example. This is for illustrative purposes only and those skilled in the art will recognize the detailed description provided herein could be applied in a straightforward fashion to various other crucible materials such as described with respect to alternate embodiments described herein. Thetungsten crucible 100 of this invention includes a wall structure having athickness 126 that is at least about 1.5 times, and preferably greater than about 3 times, that of theaverage tungsten grain 122. In one embodiment, thetungsten crucible 100 is formed using powder metallurgy techniques. - The crucible of the present invention may advantageously provide for the growth of relatively large III-nitride single crystals, and in particular may provide for the growth of AlN single crystals having a diameter in the range from about 20 to about 50 mm or greater. AlN crystals of this size may be advantageously used to fabricate relatively high quality nitride semiconductor devices with relatively better yield than prior-art approaches. These and other advantages of this invention will become evident in light of the following discussion of various embodiments thereof.
- Referring now to
FIGS. 1-3B , prior art and the apparatus and method of the present invention are described. Referring toFIG. 1 , prior-art crucible 10 typically includes acylindrical body portion 12 and a taperedconical end portion 14 and is used in a tungsten tube furnace such as that shown in the above-referenced Slack and McNelly (“AlN Single Crystals”). To grow AlN crystals using the sublimation-recondensation technique of Slack and McNelly, thesharp tip 16 of the crucible is placed in the nominal center of the furnace at the start of run with a charge of AlN (e.g., about 5 grams) placed at theopposite end 18 of thecrucible 10. Thecrucible 10 is rotated (e.g., at about 2 revolutions per hour) about itslongitudinal axis 15 and simultaneously pushed through the hot zone (i.e., the center) of the tube furnace (withend 18 moving towards tip 16) at a rate of about 0.3 mm per hour. The center of the furnace is held at a temperature of about 2250 degrees C. during the duration of the run. The total running time may be on the order of 100 hours or more. - Referring now to
FIG. 2A , theseconventional crucibles 10 are formed by a chemical vapor deposition process (CVD).Crucibles 10 formed by a CVD process (e.g., using either the conventional tungsten fluoride or tungsten chloride processes) may be characterized as having a columnar grain structure in which theW grains 22 are disposed substantially perpendicular to theinner wall 24 of thecrucible 10 and extend substantially theentire thickness 26 of the crucible wall 20 (i.e., from theinner wall 24 to the outer wall 25). Referring now toFIG. 2B , and as briefly described hereinabove,crucible 10 tends to develop pinhole leaks 30 at the grain boundaries 32 (FIG. 2A ) thereof, which disadvantageously permit aluminum vapor to escape from the interior of thecrucible 10. The pinhole leaks 30 also generally lead to crucible failure which thus limits the maximum achievable crystal size. - This problem may be circumvented, in theory, by employing single-crystal tungsten crucibles. However, such a solution is relatively difficult to implement and prohibitively expensive for commercialization.
- One aspect of this invention is the realization that the above-described pinhole leak problem may be related to swelling of the
tungsten grains 22 caused by the absorption of aluminum during use. Measurements conducted by the inventors have shown that after growth at 2330 degrees C. the tungsten crucible contained 5.3 atom percent aluminum in solid solution (which is approximately equivalent to the saturation value of aluminum in tungsten at that temperature). At this aluminum concentration, the lattice constant was measured to decrease slightly to 3.162 angstroms from 3.165 angstroms for pure tungsten (with aluminum atoms substitutionally replacing tungsten atoms in the lattice). Thus the absorption of aluminum should theoretically result in swelling of slightly less than 5.3 volume percent, which was corroborated by an observed swelling of about 5 volume percent. - Not wishing to be bound by a particular theory, it is believed that the swelling results in
pinhole 30 formation, particularly at the triple points where threetungsten grains 22 meet. Since thegrains 22 of theCVD tungsten crucibles 10 are columnar and extend thethickness 26 of thecrucible wall 20, thepinholes 30 likewise extend thethickness 26 of thecrucible wall 20. - Referring now to
FIGS. 3A and 3B , a cross sectional schematic illustration of thetungsten grain 122 structure of thecrucible 100 of the present invention is illustrated.Crucible 100 is substantially similar to crucible 10 (FIG. 1 ) in that it may include a cylindrical body portion 12 (FIG. 1 ) and a tapered conical end portion 14 (FIG. 1 ).Crucible 100 differs from that ofcrucible 10 in that it utilizes a granular, multigrain structure in which thethickness 126 of the crucible wall is at least 1.5 times that of the average grain diameter. The grain structure of this invention may also be thought of as including at least two layers, afirst layer 144 adjacent to (or forming) theinner wall 124 of thecrucible 100 and asecond layer 145 adjacent to thefirst layer 144. While not wishing to be bound by a particular theory it is believed that the present invention uses the normally deleterious effects of the grain swelling to advantage, to nominally block grain boundary diffusion. It is believed that once swelling has occurred alonggrain boundaries 132 of thefirst grain layer 144, further diffusion is severely hampered by thesecond grain layer 145, grains of which have swollen to effectively close off any diffusion pathways or pinholes along the grain boundaries of thefirst layer 144. Thus, any further diffusion of aluminum into the walls of the crucible generally occurs only by relatively slow bulk diffusion. Further, the three-dimensional, substantially random arrangement of thegrains 122, as illustrated inFIGS. 3A and 3B , is believed to slow the formation of pinholes in any of the layers. Nevertheless, aluminum transport through any pinholes that may be formed in thefirst layer 144 oftungsten grains 122 is nominally sealed off by the second layer 145 (or subsequent layers) thereof. - One method of implementing this invention is to machine crucibles from a tungsten bar formed using powder metallurgy techniques. These powder metallurgy bars include tungsten grains having substantially no columnar grain structure. As stated above, this structure is believed to reduce the penetration rate of aluminum along the grain boundaries and its subsequent escape from the crucible, particularly after the tungsten grains have swelled due to the uptake of Al by bulk in-diffusion. Crucibles formed by the above described powder metallurgy technique have been demonstrated to exhibit a significantly longer life than would be expected simply by the increased wall thickness, indicating that the granular structure slows the permeation of aluminum through the crucible walls.
- The artisan of ordinary skill in the art will readily recognize that there may be alternate approaches to forming a multilayered tungsten crucible wall. One such possible approach may be to fabricate crucibles using multiple CVD steps while using an agent between steps that disrupts further columnar growth of the individual tungsten grains.
- The crucible of the present invention may be useful in fabricating III-nitride single crystals such as aluminum nitride for the electronics and opto-electronics applications. For example, the inventive crucible may be used in a tube furnace, such as that disclosed by Slack and McNelly as referenced hereinabove. The crucible is typically first charged with relatively pure aluminum nitride (e.g., greater than about 99%) and then sealed before inserting into the tube furnace. At least a portion of the crucible is heated to a temperature in excess of about 2000 degrees C. at which aluminum nitride crystal formation is favored.
- The crucibles of the present invention have been demonstrated to successfully grow AlN crystals having a diameter of up to 20 mm and greater. Moreover, the powder metallurgy tungsten crucibles of this invention may be used to grow AlN crystals having a diameter of up to 50 mm or greater. As described hereinabove, AlN crystals of this size may be advantageously used in the fabrication of relatively high quality nitride semiconductor devices with relatively better yield than prior approaches.
- Specific exemplary embodiment(s) have been disclosed herein in which a multilayered and/or three-dimensional nominally random tungsten grain structure is produced resulting in the boundaries between tungsten grains being nominally completely blocked owing to the swelling generated by aluminum absorption. In light thereof, the skilled artisan will readily recognize that any approach to tungsten crucible construction that creates multiple layers of relatively dense tungsten grains, may be considered within the spirit and scope of this invention.
- Other embodiments are also envisaged in which tungsten crucibles are subjected to a sealing process through grain swelling with metals other than aluminum. For example, Be, Cr, Pd, Ti, Pt, Rh, Ru, and V each have high temperature solubilities in tungsten (S. V. Nagender Naidu and P. Rama Rao, Editors, Phase Diagrams of Binary Tungsten Alloys, Indian Institute of Metals, Calcutta, (1991)). Thus they would be expected to swell the tungsten grains and nominally stop further grain boundary diffusion of the chosen metal or, on later reheating, of Al in the crucible of this invention. Metals with somewhat lower solid solubility in tungsten (such as Fe) may also be effectively contained b y grain swelling although the solid solubility of Fe in tungsten is less than three percent. It may also be possible to fabricate crucibles out of metals other than tungsten in which the solid solubility of the metal contained by the crucible causes the grains of the crucible to swell and thus impede further grain boundary diffusion of the metal contained therein.
- One disadvantage of tungsten crucibles is that pure tungsten tends to be quite brittle and, as a result, is difficult to machine. Accordingly, alternate embodiments of the present invention may be provided, which are substantially similar to
crucible 100 described hereinabove, though fabricated from various materials other than tungsten. - For example, in particular embodiments, crucibles may be fabricated from tungsten-rhenium (W—Re) alloys, which tend to be much less brittle thus useful in situations where some machinability or flexibility is desired. Pure tungsten has a body-centered-cubic crystal structure and W—Re alloys will have nominally the same crystal structure up to 37 atom % rhenium. Aluminum atoms diffused into such W—Re alloy grains will produce the desired grain swelling and reduced grain boundary diffusion as described above. Thus, such W—Re polycrystalline alloy crucibles may be employed for growing AlN crystals. Since the W—Re mixed crystal grains have a melting point lower than that of pure tungsten, these crucibles may be limited to AlN crystal growth temperatures lower than those used for pure W. If the upper use temperature in a particular implementation is, for example, about 2350° C. for a pure tungsten crucible, then one would expect the upper growth temperature to be limited to about 2000° C. for a crucible fabricated from tungsten containing 37 atom % rhenium in an otherwise similar implementation.
- Other embodiments may include crucibles fabricated from polycrystalline rhenium (Re), which has a hexagonal-close-packed crystal structure. Aluminum atoms are also substitutionally soluble in rhenium at high temperature, and may be used to eliminate porosity in polycrystalline rhenium by using a multilayer grain structure. The first (e.g., inner) layer of Re grains will also swell as described above, sealing off the later (e.g., outer) layers of grains.
- Still further embodiments include crucibles fabricated from polycrystalline tantalum monocarbide, (TaC). These crucibles would also be chemically stable in the presence of AlN and in a nitrogen atmosphere of up to 100 bars at 2300° C. Thus, crucibles of TaC may be useful for growing AlN. However, polycrystalline crucibles of TaC would generally be slightly porous and Al vapor will leak out of them during growth unless a multilayer grain structure is used such as described hereinabove. One way the present invention may be applied to these crucibles is by fabricating them using a powder mixture of TaC with added Ta2C. For instance, a pressed and sintered crucible, using powder metallurgy, may be made from about 10 volume percent of Ta2C added to the TaC. When the sintered crucible is fired in CH4, C2H2, or other suitable hydrocarbon gas at 2000° C. to 2500° C., the Ta2C will convert to TaC and will increase its volume by about 7.5% so that it would eliminate about 0.75 volume percent of porosity in the finished crucible. Employing a 50 volume percent TaC plus 50 volume percent Ta2C would enable one to fully eliminate about 3.8% volume percent porosity in the sintered body.
- In a variation of these embodiments, tantalum (Ta) metal powder may be added to the TaC powder mixture at the start of the powder metallurgy process. This Ta metal will expand by about 23% in volume when converted to TaC. Thus, less second-phase material is required to make a dense TaC crucible body. Such dense, multi-grain crucibles may be very useful for growing AlN crystals as described herein.
- Still further embodiments include crucibles of polycrystalline Ta2N, which may be used for growing AlN crystals at temperatures up to about 2300° C. (depending on the Ta2N/AlN eutectic temperature). Useful crucibles may be formed by using powder metallurgy starting with a mixture of Ta2N powder and Ta metal powder. In particular examples, after pressing and sintering, these crucibles should be heated in about 0.1 to 10 bars of N2 gas at 2000° C. before use. During this heat treatment, the Ta powder grains will be converted to Ta2N and will expand by about 9.5% in volume. Thus, residual porosity in such crucibles may be nominally eliminated before being used to grow AlN crystals. Moreover, use of multilayer grain structures, such as described hereinabove, will dramatically reduce Al diffusion along the grain boundaries through the crucible walls allowing large AlN crystals to be grown.
- In other embodiments, crucibles of polycrystalline hafnium nitride (HfN) may also be used for growing AlN crystals up to temperatures of about 2300° C. These powder metallurgy crucibles may be made from a mixture of HfN powder and hafnium (Hf) metal powder. If such crucibles are heated in 0.1 to 10 bars of N2 gas at 2000° C. before use, the Hf powder grains will be converted to HfN and will expand by approximately 7.3% in volume during the process. Thus, residual porosity in such crucibles may be nominally eliminated before use for growing AlN crystals. And, as discussed above with respect to other embodiments, these crucibles may be fabricated with multilayer grain structures, to retard Al diffusion along the grain boundaries through the crucible walls allowing large AlN crystals to be grown.
- Other embodiments include powder metallurgy crucibles fabricated from a mixture of W and Ta powders. These two metals are mutually miscible in all proportions to form homogeneous alloys. Thus, a crucible made from an alloy of, for example, 3 atom percent Ta, may be formed. A range of Ta contents from 0.5 to 10 atom percent are also possible. When such a polycrystalline crucible is heated in N2 gas at 2000° C. at 0.1 to 10 bars pressure, the nitrogen atoms will diffuse into the alloy grains. There will be no chemical reaction with the W but the Ta metal will react with nitrogen to form Ta2N clusters. These Ta2N clusters have a hexagonal-close packed crystal structure and will precipitate out at the grain boundaries in the body-centered-cubic W. Thus, they will act as grain-growth inhibitors keeping the grain size of the W grains relatively small. This small-grain-structure is useful when the crucibles are exposed to Al vapor in the growth of AlN crystals. Such small grains rapidly become saturated with aluminum and thus expand to stop the grain-boundary transport of aluminum, e.g., when in a multilayer construction as discussed hereinabove. Such W—Ta crucibles should self-seal more rapidly than pure W crucibles, and thus be better for growing AlN crystals.
- The modifications to the various aspects of the present invention described hereinabove are merely exemplary. It is understood that other modifications to the illustrative embodiments will readily occur to persons with ordinary skill in the art. All such modifications and variations are deemed to be within the scope and spirit of the present invention as defined by the accompanying claims.
Claims (20)
1.-31. (canceled)
32. A crucible comprising at least one of hafnium or a carbide, and having an elongated wall structure extending in a longitudinal direction, the wall structure
(i) comprising a plurality of grains and defining an interior crystal growth cavity; and
(ii) having a thickness dimension (a) extending in a direction substantially perpendicular to said longitudinal direction and (b) being at least about 1.5 times the average grain size.
33. The crucible of claim 32 wherein the plurality of grains
(i) form at least first and second layers, the first layer including a portion of the plurality of grains forming an inside surface of the wall structure and the second layer being adjacent to the first layer; and
(ii) define a plurality of diffusion pathways within the wall structure, the plurality of grains swelling upon absorption of either nitrogen or a column III element, thereby substantially obstructing at least some of the diffusion pathways.
34. The crucible of claim 33 wherein the diffusion pathways defined by boundaries between adjacent grains are substantially obstructed by others of the plurality of grains when they swell upon absorption.
35. The crucible of claim 32 wherein the crystal growth cavity includes a substantially cylindrical portion and a tapered conical end portion.
36. The crucible of claim 32 comprising hafnium.
37. The crucible of claim 32 comprising a carbide.
38. A method for fabricating a crucible, the method comprising fabricating a wall structure from a granular material comprising at least one of hafnium or a carbide, the wall structure defining an interior crystal growth cavity and comprising a plurality of grains forming at least first and second layers, the first layer including a portion of the plurality of grains forming an inside surface of the wall structure and the second layer being superimposed on the first layer.
39. The method of claim 38 wherein at least a portion of the wall structure is fabricated by steps comprising:
(i) pressing the granular material into a desired shape;
(ii) sintering the granular material to form a sintered structure; and
(iii) heating the sintered structure at a temperature ranging from at least about 2000° C. to about 2500° C. under conditions suitable to effect grain swelling.
40. The method of claim 39 , wherein, in step (iii), the sintered structure is heated in an atmosphere selected from the group consisting of inert atmospheres and chemically active atmospheres.
41. The method of claim 38 wherein the granular material comprises hafnium.
42. The method of claim 38 wherein the granular material comprises a carbide.
43. A method for fabricating an aluminum nitride crystal, the method comprising:
(i) depositing aluminum nitride in a crystal growth cavity of a crucible comprising an elongated wall structure defining the crystal growth cavity, the elongated wall structure comprising a plurality of grains, the grains forming at least first and second layers, the first layer including grains forming an inside surface of the wall structure and the second layer being superimposed on the first layer;
(ii) sealing the crucible; and
(iii) heating at least a portion of the crucible to a temperature in excess of about 2000° C.,
wherein the crucible comprises at least one of hafnium or a carbide, and during step (iii), in at least the portion of the crucible, grains of at least the second layer swell to substantially obstruct diffusion of aluminum along diffusion pathways defined by boundaries between grains of at least the first layer.
44. The method of claim 43 wherein the crucible comprises hafnium.
45. The method of claim 43 wherein the crucible comprises a carbide.
46. A crucible comprising:
at least one of hafnium or a carbide, and
a wall structure defining an interior crystal growth cavity and comprising a plurality of grains defining a plurality of diffusion pathways within the wall structure, the plurality of grains swelling upon absorption of at least one of aluminum or nitrogen, thereby substantially obstructing at least some of the plurality of diffusion pathways.
47. The crucible of claim 46 wherein the diffusion pathways are defined by boundaries between adjacent grains, the grains forming at least first and second layers, the first layer including grains forming an inside surface of the crucible and the second layer being superimposed on the first layer.
48. The crucible of claim 47 wherein the diffusion pathways of the first layer are substantially obstructed by swollen grains of the second layer upon absorption of at least one of aluminum or nitrogen by the grains of the second layer.
49. The crucible of claim 46 comprising hafnium.
50. The crucible of claim 46 comprising a carbide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/728,027 US20080134957A1 (en) | 2001-09-21 | 2007-03-23 | Powder metallurgy crucible for aluminum nitride crystal growth |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32394701P | 2001-09-21 | 2001-09-21 | |
US10/251,106 US6719843B2 (en) | 2001-09-21 | 2002-09-20 | Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
US10/822,336 US7211146B2 (en) | 2001-09-21 | 2004-04-12 | Powder metallurgy crucible for aluminum nitride crystal growth |
US11/728,027 US20080134957A1 (en) | 2001-09-21 | 2007-03-23 | Powder metallurgy crucible for aluminum nitride crystal growth |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/822,336 Continuation US7211146B2 (en) | 2001-09-21 | 2004-04-12 | Powder metallurgy crucible for aluminum nitride crystal growth |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080134957A1 true US20080134957A1 (en) | 2008-06-12 |
Family
ID=46301971
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/822,336 Expired - Lifetime US7211146B2 (en) | 2001-09-21 | 2004-04-12 | Powder metallurgy crucible for aluminum nitride crystal growth |
US11/728,027 Abandoned US20080134957A1 (en) | 2001-09-21 | 2007-03-23 | Powder metallurgy crucible for aluminum nitride crystal growth |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/822,336 Expired - Lifetime US7211146B2 (en) | 2001-09-21 | 2004-04-12 | Powder metallurgy crucible for aluminum nitride crystal growth |
Country Status (1)
Country | Link |
---|---|
US (2) | US7211146B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110020602A1 (en) * | 2005-05-11 | 2011-01-27 | North Carolina State University | Controlled polarity group iii-nitride films and methods of preparing such films |
US8822045B2 (en) | 2008-07-30 | 2014-09-02 | North Carolina State University | Passivation of aluminum nitride substrates |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7211146B2 (en) * | 2001-09-21 | 2007-05-01 | Crystal Is, Inc. | Powder metallurgy crucible for aluminum nitride crystal growth |
US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
PL1868959T3 (en) * | 2005-04-06 | 2012-01-31 | Univ North Carolina State | Method of preparing dense, shaped articles constructed of a refractory material |
US7678195B2 (en) * | 2005-04-07 | 2010-03-16 | North Carolina State University | Seeded growth process for preparing aluminum nitride single crystals |
US8349077B2 (en) | 2005-11-28 | 2013-01-08 | Crystal Is, Inc. | Large aluminum nitride crystals with reduced defects and methods of making them |
WO2007065018A2 (en) * | 2005-12-02 | 2007-06-07 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
CN101454487B (en) * | 2006-03-30 | 2013-01-23 | 晶体公司 | Methods for controllable doping of aluminum nitride bulk crystals |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US8323406B2 (en) | 2007-01-17 | 2012-12-04 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US8080833B2 (en) * | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
WO2008094464A2 (en) * | 2007-01-26 | 2008-08-07 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
US8088220B2 (en) * | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
US8361178B2 (en) * | 2008-04-21 | 2013-01-29 | Smith International, Inc. | Tungsten rhenium compounds and composites and methods for forming the same |
US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
JP5806734B2 (en) | 2010-06-30 | 2015-11-10 | クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. | Large single crystal growth of aluminum nitride by thermal gradient control |
US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
CN108511567A (en) | 2013-03-15 | 2018-09-07 | 晶体公司 | With the counterfeit plane contact with electronics and photoelectric device |
CN106796977B (en) | 2014-07-23 | 2019-06-28 | 晶体公司 | The photon of ultraviolet light emitting device extracts |
DE102014017021B4 (en) | 2014-11-19 | 2021-02-11 | Forschungsverbund Berlin E.V. | Seed holder of a single crystal growing device and single crystal growing device |
JP7402601B2 (en) * | 2018-05-09 | 2023-12-21 | リンテック株式会社 | Individual piece forming apparatus and individual piece forming method |
CN112387974B (en) * | 2020-11-16 | 2023-03-17 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Preparation method of crucible material for growing aluminum nitride crystal by PVT method |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4234554A (en) * | 1977-11-11 | 1980-11-18 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | Stable crystalline lithium nitride and process for its preparation |
US5858085A (en) * | 1994-08-22 | 1999-01-12 | Mitsubishi Materials Corporation | Method for growing a semiconductor single-crystal |
US5858086A (en) * | 1996-10-17 | 1999-01-12 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride |
US5909036A (en) * | 1996-06-25 | 1999-06-01 | Sumitomo Electric Industries, Ltd. | Group III-V nitride semiconductor device |
US6001748A (en) * | 1996-06-04 | 1999-12-14 | Sumitomo Electric Industries, Ltd. | Single crystal of nitride and process for preparing the same |
US6045612A (en) * | 1998-07-07 | 2000-04-04 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride |
US6048813A (en) * | 1998-10-09 | 2000-04-11 | Cree, Inc. | Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys |
US6063185A (en) * | 1998-10-09 | 2000-05-16 | Cree, Inc. | Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
US6086672A (en) * | 1998-10-09 | 2000-07-11 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride: silicon carbide alloys |
US6719843B2 (en) * | 2001-09-21 | 2004-04-13 | Crystal Is, Inc. | Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
US6787089B2 (en) * | 2002-05-02 | 2004-09-07 | Kun-Chung Liu | Method for making a shoe |
US7211146B2 (en) * | 2001-09-21 | 2007-05-01 | Crystal Is, Inc. | Powder metallurgy crucible for aluminum nitride crystal growth |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2745408B2 (en) | 1988-07-07 | 1998-04-28 | 東芝セラミックス株式会社 | Semiconductor single crystal pulling equipment |
FR2779067B1 (en) * | 1998-05-29 | 2000-08-18 | Inst Francais Du Petrole | DEVICE FOR CONTROLLING THE FLOW OF AT LEAST ONE FLUID OF SEPARATION UNITS PER SIMULATED MOBILE BED |
JP3015887B1 (en) | 1998-11-19 | 2000-03-06 | 科学技術庁金属材料技術研究所長 | Bulk single crystal growth method |
US6187089B1 (en) | 1999-02-05 | 2001-02-13 | Memc Electronic Materials, Inc. | Tungsten doped crucible and method for preparing same |
-
2004
- 2004-04-12 US US10/822,336 patent/US7211146B2/en not_active Expired - Lifetime
-
2007
- 2007-03-23 US US11/728,027 patent/US20080134957A1/en not_active Abandoned
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4234554A (en) * | 1977-11-11 | 1980-11-18 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | Stable crystalline lithium nitride and process for its preparation |
US5858085A (en) * | 1994-08-22 | 1999-01-12 | Mitsubishi Materials Corporation | Method for growing a semiconductor single-crystal |
US6001748A (en) * | 1996-06-04 | 1999-12-14 | Sumitomo Electric Industries, Ltd. | Single crystal of nitride and process for preparing the same |
US5909036A (en) * | 1996-06-25 | 1999-06-01 | Sumitomo Electric Industries, Ltd. | Group III-V nitride semiconductor device |
US6296956B1 (en) * | 1996-10-17 | 2001-10-02 | Cree, Inc. | Bulk single crystals of aluminum nitride |
US5858086A (en) * | 1996-10-17 | 1999-01-12 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride |
US5972109A (en) * | 1996-10-17 | 1999-10-26 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride |
US6045612A (en) * | 1998-07-07 | 2000-04-04 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride |
US6063185A (en) * | 1998-10-09 | 2000-05-16 | Cree, Inc. | Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
US6086672A (en) * | 1998-10-09 | 2000-07-11 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride: silicon carbide alloys |
US6048813A (en) * | 1998-10-09 | 2000-04-11 | Cree, Inc. | Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys |
US6719843B2 (en) * | 2001-09-21 | 2004-04-13 | Crystal Is, Inc. | Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
US7211146B2 (en) * | 2001-09-21 | 2007-05-01 | Crystal Is, Inc. | Powder metallurgy crucible for aluminum nitride crystal growth |
US6787089B2 (en) * | 2002-05-02 | 2004-09-07 | Kun-Chung Liu | Method for making a shoe |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110020602A1 (en) * | 2005-05-11 | 2011-01-27 | North Carolina State University | Controlled polarity group iii-nitride films and methods of preparing such films |
US8734965B2 (en) | 2005-05-11 | 2014-05-27 | North Carolina State University | Controlled polarity group III-nitride films and methods of preparing such films |
US8822045B2 (en) | 2008-07-30 | 2014-09-02 | North Carolina State University | Passivation of aluminum nitride substrates |
Also Published As
Publication number | Publication date |
---|---|
US20050223967A1 (en) | 2005-10-13 |
US7211146B2 (en) | 2007-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20080134957A1 (en) | Powder metallurgy crucible for aluminum nitride crystal growth | |
US6719843B2 (en) | Powder metallurgy tungsten crucible for aluminum nitride crystal growth | |
EP1490537B1 (en) | High pressure high temperature growth of crystalline group iii metal nitrides | |
US7097707B2 (en) | GaN boule grown from liquid melt using GaN seed wafers | |
EP2588651B1 (en) | Growth of large aluminum nitride single crystals with thermal-gradient control | |
JP4848495B2 (en) | Single crystal silicon carbide and method for producing the same | |
EP2330236B1 (en) | METHOD AND APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL FILM | |
EP1803840B1 (en) | Method for growing single crystal of silicon carbide | |
JP2009188117A (en) | METHOD OF MANUFACTURING SURFACE-MODIFIED SINGLE CRYSTAL SiC SUBSTRATE, SINGLE CRYSTAL SiC SUBSTRATE WITH EPITAXIAL GROWTH LAYER, SEMICONDUCTOR CHIP, SEED SUBSTRATE FOR SINGLE CRYSTAL SiC GROWTH, AND POLYCRYSTAL SiC SUBSTRATE WITH SINGLE CRYSTAL GROWTH LAYER | |
JP2019031439A (en) | Bulk diffusion crystal growth process | |
US5873937A (en) | Method of growing 4H silicon carbide crystal | |
US6562131B2 (en) | Method for growing single crystal silicon carbide | |
KR101910696B1 (en) | Semiconductor wafer manufacturing method, and semiconductor wafer | |
JP2019019037A (en) | Method for manufacturing silicon carbide single crystal | |
US4971757A (en) | Method for preparing dense tungsten ingots | |
US6562130B2 (en) | Low defect axially grown single crystal silicon carbide | |
US6547877B2 (en) | Tantalum crucible fabrication and treatment | |
US6537371B2 (en) | Niobium crucible fabrication and treatment | |
US20090211514A1 (en) | Single crystal conversion process | |
KR20010000827A (en) | manufacturing method for GaN single crystal | |
Slack et al. | Research on Aluminum Nitride Materials | |
JPH09221399A (en) | Method for growing ii-vi compound semiconductor single crystal |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: CRYSTAL IS, INC., NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SCHOWALTER, LEO J.;SLACK, GLEN A.;REEL/FRAME:019257/0236 Effective date: 20070108 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |