US20080002755A1 - Integrated microelectronic package temperature sensor - Google Patents
Integrated microelectronic package temperature sensor Download PDFInfo
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- US20080002755A1 US20080002755A1 US11/477,267 US47726706A US2008002755A1 US 20080002755 A1 US20080002755 A1 US 20080002755A1 US 47726706 A US47726706 A US 47726706A US 2008002755 A1 US2008002755 A1 US 2008002755A1
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- carbon nanotubes
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- integrated circuit
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2211/00—Thermometers based on nanotechnology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/953—Detector using nanostructure
- Y10S977/955—Of thermal property
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2918—Rod, strand, filament or fiber including free carbon or carbide or therewith [not as steel]
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- Chemical & Material Sciences (AREA)
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- Health & Medical Sciences (AREA)
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- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Temperatures in microelectronic integrated circuit packages and components may be measured in situ using carbon nanotube networks. An array of carbon nanotubes strung between upstanding structures may be used to measure local temperature. Because of the carbon nanotubes, a highly accurate temperature measurement may be achieved. In some cases, the carbon nanotubes and the upstanding structures may be secured to a substrate that is subsequently attached to a microelectronic package.
Description
- This relates generally to measuring temperature in connection with microelectronic packages and components.
- The effects of temperature on microelectronic packages and components may be various. Many packaging processes involve the application of elevated temperatures. These elevated temperatures may adversely affect components, including the integrated circuit chip within the package. In addition, the packages may be exposed to various other temperature effects which may have an impact on the packaged components. Also, the integrated circuits themselves can be exposed to various temperature conditions.
- It is known how to integrate integrated circuit temperature sensors within an overall integrated circuit. Temperature readings can be obtained from serpentine, integrated temperature sensors. However, the accuracy of these measurements may, in some cases, be limited. Moreover, the temperature sensors may take up a relatively significant percentage of the overall available integrated circuit space. Also, in some cases, the places at which such temperature sensors can be formed are limited. Namely, there are generally limited to areas of sufficient size that can receive such an integrated element.
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FIG. 1 is a greatly enlarged, partial, cross-sectional view of one embodiment of the present invention; -
FIG. 2 is a greatly enlarged, cross-sectional view of the embodiment shown inFIG. 1 after further processing; -
FIG. 3 is a top plan view of the embodiment ofFIG. 2 in position on an integrated circuit or other microelectronic package component; -
FIG. 4 is an enlarged, cross-sectional view of a package in accordance with one embodiment of the present invention; -
FIG. 5 is an enlarged, cross-sectional view of a package in accordance with another embodiment of the present invention; -
FIG. 6 is an enlarged, cross-sectional view of an integrated circuit in accordance with one embodiment of the present invention; -
FIG. 7 is an enlarged, cross-sectional view of still another embodiment of the present invention using two spaced metallic lines; and -
FIG. 8 is a system depiction in accordance with one embodiment of the present invention. - Referring to
FIG. 1 , in accordance with some embodiments of the present invention, atemperature sensor 10 may be formed on an integratedcircuit substrate 12. A plurality ofmetallic structures 16 may be formed which extend upwardly from thesubstrate 12. Thestructures 16 may be made of a material suitable for the growth of bridge-like carbon nanotubes 18. Thosecarbon nanotubes 18 may act as temperature sensors. Namely, the conductivity of those nanotubes is a function of temperature. By measuring the conductivity of the nanotubes, by passing current through them, one can determine the local temperature. - In some embodiments of the present invention, a large number of
upstanding structures 16 may be formed. They may be formed in regular arrays, in some embodiments, using well known techniques. The arrays may be composed of aninner pillar 14 which may be a non-metallic material and a metallic coating that forms theupstanding structure 16. -
Carbon nanotubes 18 may bridge betweenadjacent structures 16. Thus, a plurality ofcarbon nanotubes 18 may be randomly arranged in a generally horizontal configuration transverse to theupstanding structures 16. - In some embodiments of the present invention, the
structures 16 may be formed directly on thesubstrate 12. Thestructures 16 may include thepillars 14, in one embodiment of the present invention, covered by a metal catalyst to form themetallic structure 16. Suitable metal catalysts include iron, cobalt, and nickel. As an example, thestructure 16 may be of a height of about a micron. - The structures may be formed, for example, by glancing angled deposition methods. By controlling the
substrate 12 rotational motion, including both its angle and velocity, thestructure 16 height can be controlled. Although different metal catalysts may be utilized to form thestructures 16, nickel may be preferred because it may offer lower contact resistance with thenanotubes 18 to be formed subsequently. - In some embodiments of the present invention, some number of the
upstanding structures 16 on thesubstrate 12 may be used to make aseparable unit 20, shown inFIG. 2 . Theseparable unit 20 may be formed of a portion of thesubstrate 12 whose thickness has been reduced so that the substrate thickness does not adversely affect the temperature measurements. Thus, thesubstrate 12 may be reduced in size and thickness to form theunit 20 with some lesser number ofupstanding structures 16 formed thereon. - The
carbon nanotubes 18, shown inFIG. 1 , may be grown so as to bridge betweenstructures 16. This is particularly useful when large arrays ofstructures 16 are provided in regular rows and columns. In one embodiment, gas phase chemical vapor deposition may be used to grow the carbon nanotubes. In one embodiment of the present invention, methane may be used as a source for carbon for the growth of carbon nanotubes. As a result, nanotubes may extend from one upstanding structure to another. Argon gas may be supplied during the deposition of the carbon nanotubes to reduce oxidation. A pressure of about 500 Torr and a furnace temperature in a range including, but not limited to, 800 to 950 degrees Celsius in the methane environment may be utilized in one embodiment. - Advantageously,
adjacent structures 16 are spaced reasonably proximately so that the carbon nanotubes (FIG. 3 ) of a given length may span across them. - The
structures 16 may be formed, in one embodiment, by depositing a catalyst over thepillar 14, preformed on thesubstrate 12. For example, thepillars 14 may be silicon or silicon dioxide pillars. The pillars may be formed, for example, by growing or depositing the pillar material, masking, and etching to form the pillars in the desired arrangement. In some embodiments, at least two of the pillars may be aligned with a crystallographic plane of thesubstrate 12 in an embodiment where the substrate is a crystalline semiconductor. - During catalyst film deposition, the
substrate 12 may be tilted twice about +/−45 degrees to spread the catalyst over thepillars 14 to form thestructures 16. Thecarbon nanotubes 18 later form on the tops and sidewalls of thepillars 14 where the catalyst is present. The catalyst may not completely cover the pillars in some cases. - In some embodiments, an array of pillars (not shown) may be grown, but only some of the pillars may be activated with the catalyst. For example, only two pillars may be activated with catalyst so carbon nanotubes bridge only the two catalyst activated pillars. The selective activation may be accomplished using masks or selective catalyst deposition. While cylindrically
shaped structures 16 are depicted, other shapes may also be used. - Generally, the
nanotubes 18 grow generally or roughly horizontally from the top to the bottom along thestructures 16. The nanotubes span like bridges over thesubstrate 12. - In some embodiments, the substrate 12 (
FIG. 1 ) may subsequently be thinned down to form the unit 20 (FIG. 2 ) so that its own thickness does not contribute to changes in the temperature of the die whose temperature is being measured. A thinned downunit 20 may then be glued onto any polymeric or ceramic surface. - Referring to
FIG. 3 , thenanotubes 18 may then be electrically coupled to an external temperature sensor (not shown) usingmetal lines 30. Particularly, theunit 20 may be adhesively secured to astructure 32 whose temperature is to be measured. Then,metal lines 30 may be deposited or otherwise formed to thestructures 16. The metal lines 30 may then connect each side of the array ofcarbon nanotubes 18 to a suitable pad (not shown) to which a temperature sensing circuit may be attached. Themetal lines 30 and the pads may be printed using conventional processes such as screen printing or plating. - In other embodiments, the nanotubes may be prepared on a substrate using a tall pillar pattern such as one which uses staples secured to a substrate. By “tall,” it is intended to refer to
structures 16 having a height on the order of (but not limited to) 0.7 centimeters. Subsequently, the nanotubes are grown and metallizations are completed.Other structures 16 may be also be utilized to grow bridge-like carbon nanotubes, including telephone pole and soccer goal oriented office staples. Literally, upstanding office staples may be utilized by securing them to silicon wafers using an appropriate adhesive such as carbon tape. The staples may have their points upstanding (“telephone poles”) or inverted (“soccer goal”) and extending into the substrate. - Then, carbon nanotubes may be grown using chemical vapor deposition in a furnace at 1373 degrees Kelvin under about 100 m Torr vacuum. To 0.02 g/ml solution of ferrocene and 10 ml of hexane, two volume percent thiophene is added. The hexane may act as a source of carbon and the ferrocene acts as a catalyst for gas diffusion formation of carbon nanotubes. The solution may be heated to 150° C. and then introduced into a horizontal quartz tube furnace at an average rate of 0.1 mls. per minute for ten minutes. Other process parameters may also be used.
- Thiophene is known to promote the formation of single walled carbon nanotubes in a hydrogen gas atmosphere, whereas multi-walled carbon nanotubes are found to grow predominantly in the absence of a hydrogen gas atmosphere. Single walled carbon nanotubes or multi-walled carbon nanotubes can be used by controlling the nanotubes growth conditions by controlling the hydrogen gas concentration in the furnace (no hydrogen gas atmosphere giving multi-walled carbon nanotubes, whereas hydrogen gas atmosphere may promote the single walled carbon nanotube growth).
- Although the recipe and numbers recited above are recommended to grow carbon nanotubes, the growth conditions are not limited to this recipe or these numbers, but, rather, is inclusive of them. In some temperature sensing applications, multi-walled carbon nanotubes may be advantageous.
- Referring to
FIG. 4 , in accordance with one embodiment of the present invention, temperatures associated with surface mount techniques may be measured by growing carbon nanotubes across second level interconnects, such as solder ball orsurface mount pads 26 a. Thepads 26 a may mountsolder balls 34. Thesolder balls 34 may couple thepackage 37 to an external printed circuit board (not shown) such as a motherboard. - The
carbon nanotubes 18 may be grown so as to span between sufficientlyadjacent pads 26 a. In some cases, only some of thepads 26 a may be used for the temperature measurement and other pads may have no such function, but, instead, function conventionally as second level interconnects. In some cases, thepads 26 a may be otherwise electrically non-functional and may only be used for temperature measurement purposes. - The
pads 26 a may be formed on asuitable substrate 36, over which is mounted the integrated circuit die 40. Ahousing 38 may cover thedie 40 and be secured to thesubstrate 36. First level interconnects 44 may be positioned between the die 40 and thesubstrate 36. - Referring to
FIG. 5 , basically the same package is shown. However, in this case, thecarbon nanotubes 18 are grown between first level interconnects 44, instead of between second level interconnects, as depicted inFIG. 4 . In this way,carbon nanotubes 18 can be selectively grown between appropriately spaced elements to make temperature measurements for first and/or second level interconnects. - In some cases, the length of the carbon nanotubes may be different for different applications in order to span the necessary space. For example, in some cases, it may be desirable to have carbon nanotubes on the order of 1 micron to span between metal lines on a die, 10 to 50 microns to span between adjacent surface mount pads, and all the way up to 1 millimeter for adjacent solder bumps.
- Generally, different techniques may be utilized to form the carbon nanotubes in different applications. In one embodiment, some interconnects, such as the
solder ball pads 26, may be masked and other interconnects, such as thesolder balls 26 a, may not be masked so that the carbon nanotubes form only between the exposedpads 26 a. As another example, aunit 20 may be laminated into position betweenadjacent pads 26 a to achieve a comparable effect. As still another possibility, nanotubes in a solvent solution may be dispensed as a liquid at selected locations at room temperature and allowed to dry. As still another option, electrodeposition may be utilized. - For the first level interconnects, it may be desirable to use the electrodeposition or liquid deposition techniques to avoid exposing the substrate or die 40 to excessive temperatures that may be required in some carbon nanotube fabrication processes.
- In some embodiments, it may be desirable for the first level interconnects, from the silicon to the substrate, to connect to second level interconnects that are actually active (non-temperature sensing) interconnects, even though the first level interconnects with the carbon nanotubes between them may be electrically non-functional for their normal interconnect (non-temperature sensing) purposes. Thus, the first level interconnects with the carbon nanotubes connected to them may be only functional for sensing temperature, but may be connected to second level interconnects that are effective, but are effective really only to convey the signals to and from the carbon nanotubes of the first level interconnects. Similarly, the second level interconnects with carbon nanotubes may be functional only for purposes of providing signals to and from the carbon nanotubes for purposes of making temperature measurements and perform no other interconnection function, in some embodiments.
- In some embodiments, the nanotubes may be highly accurate temperature indicators. Because they have anisotropic characteristics in the length dimension and have very small dimensions transversely to length dimensions, high temperature resolutions may be obtained with carbon nanotubes. Carbon nanotubes may tend to be atomically relatively perfect and chemically stable and, therefore, may be more reliable as sensors than metallic structures of similar dimensions. In addition, temperatures in hard to reach locations may be measured in some cases.
- Referring to
FIG. 6 , theunits 20 may be secured to opposite sides of an integrated circuit die 40 in another embodiment. In one embodiment, aunit 20 may be secured to thefront side 42 of thedie 40 and, in another embodiment, aunit 20 may be secured to theback side 44 of the die 40, as shown. In some cases,temperature sensing units 20 may be provided on both die sides, together with suitable metallizations to an external temperature sensor. The suitable metallizations may be provided to a current source which provides current to the carbon nanotubes in theunits 20 and measures the resulting current therefrom to determine temperature in accordance with known principles. - Referring to
FIG. 7 , in accordance with another embodiment of the present invention, spacedmetal lines 26 may be bridged bycarbon nanotubes 18. Thecarbon nanotubes 18 may span an intermediateunderlying trench 24 and a substrate 22. The metal lines 26 may be dummy metal lines for temperature purposes only or, in some cases, could be actual metal lines. Where thelines 26 are actual metal lines, these metal lines may be subsequently used for carrying signals, for example, by first destroying thecarbon nanotubes 18 after having used them, if desired, for temperature measurements. Alternatively, thelines 26 may couple to a temperature sensor that uses the varying resistance of the nanotubes to develop a temperature indication. - Finally, referring to
FIG. 8 , in accordance with some embodiments of the present invention, the integrated circuits or packaged devices with the integrated temperature sensors may be incorporated into a system including aprocessor 10. Theprocessor 10 may be coupled by abus 38 to a dynamicrandom access memory 40 and an input/output device 42. While a simple architecture is shown, many other embodiments may be possible. - References throughout this specification to “one embodiment” or “an embodiment” mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one implementation encompassed within the present invention. Thus, appearances of the phrase “one embodiment” or “in an embodiment” are not necessarily referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be instituted in other suitable forms other than the particular embodiment illustrated and all such forms may be encompassed within the claims of the present application.
- While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.
Claims (25)
1. A method comprising:
using carbon nanotubes to measure temperature on a microelectronic integrated circuit.
2. The method of claim 1 including forming a pair of spaced apart vertical structures on a substrate and growing carbon nanotubes between said vertical structures.
3. The method of claim 2 including forming a unit by reducing the thickness of said substrate.
4. The method of claim 3 including securing said unit to an integrated circuit.
5. The method of claim 3 including securing said unit to a package component of a microelectronic integrated circuit.
6. The method of claim 5 including securing said unit to a first level interconnect.
7. The method of claim 5 including securing said unit to a second level interconnect.
8. The method of claim 6 including providing current to said unit in a first level interconnect through a second level interconnect.
9. The method of claim 1 including providing a plurality of carbon nanotubes extending across adjacent interconnects.
10. The method of claim 1 including providing at least two carbon nanotubes on the back side of an integrated circuit die to measure temperature on said die.
11. A microelectronic component comprising:
a microelectronic element; and
a pair of carbon nanotubes supported on said element to measure the temperature of said element.
12. The component of claim 11 wherein said component is a first level interconnect.
13. The component of claim 11 wherein said component is a second level interconnect.
14. The component of claim 11 wherein said component is part of an integrated circuit package.
15. The component of claim 11 wherein said component is an integrated circuit die.
16. The component of claim 15 including carbon nanotubes on opposite sides of said die.
17. The component of claim 11 wherein said carbon nanotubes are mounted on a substrate secured to said component.
18. The component of claim 17 wherein said carbon nanotubes are glued to said component.
19. The component of claim 11 wherein said component is a first level interconnect and is coupled to a second level interconnect.
20. The component of claim 11 wherein said carbon nanotubes extend between a pair of metallic structures.
21. A system comprising:
a processor;
a dynamic random access memory coupled to said processor; and
said processor including a microelectronic element and a pair of carbon nanotubes supported on said element to measure the temperature of said element.
22. The system of claim 21 wherein said processor is in the form of a die having carbon nanotubes on two opposed sides of said die.
23. The system of claim 21 wherein said processor includes a package and carbon nanotubes on said package.
24. The system of claim 21 wherein said processor includes a die having carbon nanotubes formed on at least one side thereof.
25. The system of claim 21 wherein said carbon nanotubes are formed on a substrate and secured to said die.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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US11/477,267 US20080002755A1 (en) | 2006-06-29 | 2006-06-29 | Integrated microelectronic package temperature sensor |
TW96123330A TWI451541B (en) | 2006-06-29 | 2007-06-27 | Method for measuring temperature in a microelectronic integrated circuit package, microelectronic component and computing system |
CN200710129019.6A CN101097164B (en) | 2006-06-29 | 2007-06-29 | Integrated microelectronic package temperature sensor |
HK08106952A HK1116537A1 (en) | 2006-06-29 | 2008-06-23 | Integrated microelectronic package temperature sensor |
US13/447,469 US9028142B2 (en) | 2006-06-29 | 2012-04-16 | Integrated microelectronic package temperature sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US11/477,267 US20080002755A1 (en) | 2006-06-29 | 2006-06-29 | Integrated microelectronic package temperature sensor |
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US13/447,469 Continuation US9028142B2 (en) | 2006-06-29 | 2012-04-16 | Integrated microelectronic package temperature sensor |
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US20080002755A1 true US20080002755A1 (en) | 2008-01-03 |
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US11/477,267 Abandoned US20080002755A1 (en) | 2006-06-29 | 2006-06-29 | Integrated microelectronic package temperature sensor |
US13/447,469 Expired - Fee Related US9028142B2 (en) | 2006-06-29 | 2012-04-16 | Integrated microelectronic package temperature sensor |
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US13/447,469 Expired - Fee Related US9028142B2 (en) | 2006-06-29 | 2012-04-16 | Integrated microelectronic package temperature sensor |
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US (2) | US20080002755A1 (en) |
CN (1) | CN101097164B (en) |
HK (1) | HK1116537A1 (en) |
TW (1) | TWI451541B (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090135883A1 (en) * | 2006-03-14 | 2009-05-28 | International Business Machines Corporation | Multi-Layered Thermal Sensor for Integrated Circuits and Other Layered Structures |
US20090192241A1 (en) * | 2006-06-29 | 2009-07-30 | Nachiket Raravikar | Aligned nanotube bearing composite material |
ITSA20080022A1 (en) * | 2008-08-08 | 2010-02-08 | Univ Degli Studi Salerno | TEMPERATURE SENSOR BASED ON SELF-SUPPORTING CARBON NANOTUBE NETWORKS. |
US20100308848A1 (en) * | 2009-06-03 | 2010-12-09 | Kaul Anupama B | Methods for gas sensing with single-walled carbon nanotubes |
CN102359828A (en) * | 2011-07-12 | 2012-02-22 | 东南大学 | Micro-electronic temperature sensor and manufacturing process thereof |
US20120056149A1 (en) * | 2010-09-02 | 2012-03-08 | Nantero, Inc. | Methods for adjusting the conductivity range of a nanotube fabric layer |
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US9022644B1 (en) * | 2011-09-09 | 2015-05-05 | Sitime Corporation | Micromachined thermistor and temperature measurement circuitry, and method of manufacturing and operating same |
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Also Published As
Publication number | Publication date |
---|---|
TW200822332A (en) | 2008-05-16 |
US20120199830A1 (en) | 2012-08-09 |
HK1116537A1 (en) | 2008-12-24 |
US9028142B2 (en) | 2015-05-12 |
CN101097164B (en) | 2014-02-12 |
TWI451541B (en) | 2014-09-01 |
CN101097164A (en) | 2008-01-02 |
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