US20070295598A1 - Backing plate assembly - Google Patents
Backing plate assembly Download PDFInfo
- Publication number
- US20070295598A1 US20070295598A1 US11/483,134 US48313406A US2007295598A1 US 20070295598 A1 US20070295598 A1 US 20070295598A1 US 48313406 A US48313406 A US 48313406A US 2007295598 A1 US2007295598 A1 US 2007295598A1
- Authority
- US
- United States
- Prior art keywords
- backing plate
- back surface
- assembly
- magnetron
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 claims abstract description 66
- 238000001816 cooling Methods 0.000 claims abstract description 28
- 238000005477 sputtering target Methods 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 238000005096 rolling process Methods 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 description 19
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000000429 assembly Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000005019 pattern of movement Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Definitions
- Embodiments of the present invention generally relate to a backing plate assembly for a physical vapor deposition (PVD) apparatus.
- PVD physical vapor deposition
- PVD using a magnetron is one method of depositing material onto a substrate.
- a target may be electrically biased so that ions generated in a process region can bombard the target surface with sufficient energy to dislodge atoms from the target.
- the process of biasing a target to cause the generation of a plasma that causes ions to bombard and remove atoms from the target surface is commonly called sputtering.
- the sputtered atoms travel generally toward the substrate being sputter coated, and the sputtered atoms are deposited on the substrate.
- the atoms react with a gas in the plasma, for example, nitrogen, to reactively deposit a compound on the substrate.
- Reactive sputtering is often used to form thin barrier and nucleation layers of titanium nitride or tantalum nitride on the substrate.
- Direct current (DC) sputtering and alternating current (AC) sputtering are forms of sputtering in which the target is biased to attract ions towards the target.
- the target may be biased to a negative bias in the range of about ⁇ 100 to ⁇ 600 V to attract positive ions of the working gas (e.g., argon) toward the target to sputter the atoms.
- the sides of the sputter chamber are covered with a shield to protect the chamber walls from sputter deposition.
- the shield may be electrically grounded and thus provide an anode in opposition to the target cathode to capacitively couple the target power to the plasma generated in the sputter chamber.
- the backing plate To deposit thin films over large area substrates such as glass substrates, flat panel display substrates, solar panel substrates, and other suitable substrates, a sputtering target, and hence, the backing plate must be of substantial size. As backing plates increase in size, the weight of the backing plate may also increase.
- the invention comprises a backing plate for accommodating large area sputtering targets.
- the backing plate assembly has cavities carved into the back surface of the backing plate.
- the backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target.
- the cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process.
- FIG. 1 is a top view of a backing plate assembly 100 having cavities 102 formed therein.
- FIG. 2 is a cross sectional view of a backing plate assembly 200 according to another embodiment of the invention.
- FIG. 3 is a top view of a backing plate assembly 300 with cavities 304 filled with material 312 .
- FIG. 4 is a cross sectional view of a backing plate assembly 400 according to another embodiment of the invention.
- FIG. 5 is a cross sectional view of a backing plate assembly 500 having a magnetron plate 514 positioned behind the backing plate.
- FIG. 6 is a cross sectional view of an apparatus 600 according to another embodiment of the invention.
- the invention comprises a backing plate for accommodating large area sputtering targets.
- the backing plate assembly has cavities carved into the back surface of the backing plate.
- the backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target.
- the cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process.
- the invention is illustratively described and may be used in a physical vapor deposition system for processing large area substrates, such as a PVD system, available from AKT®, a subsidiary of Applied Materials, Inc., Santa Clara, Calif.
- a PVD system available from AKT®, a subsidiary of Applied Materials, Inc., Santa Clara, Calif.
- the backing plate may have utility in other system configurations, including those systems configured to process large area round substrates.
- An exemplary system in which the present invention can be practiced is described in U.S. patent application Ser. No. 11/225,922, filed Sep. 13, 2005, which is hereby incorporated by reference in its entirety.
- the backing plate As the size of substrates increases, so must the size of the sputtering target and hence, the backing plate.
- backing plates having a length of greater than 1 meter are not uncommon. As the size of the backing plate increases, so does the weight. Therefore, a backing plate spanning a length of greater than 1 meter may bow due to the significant weight of the backing plate.
- the backing plate may have cooling channels formed therein to control the temperature of the backing plate and the sputtering target. The cooling channels and fluid flowing therein may add to the weight of the backing plate.
- any magnetron movement behind the backing plate may be impeded by the support structure.
- the support structure may impede the movement of the magnetron because the support structure may be positioned in the location where bowing is most likely to occur (i.e., the middle of the backing plate).
- the bowing is most likely to occur in the middle of the backing plate because the middle is the location furthest away from the edges of the backing plate where the backing plate is supported.
- the magnetron may be placed behind a backing plate to create a uniform plasma across a sputtering target and hence, uniformly erode the sputtering target.
- An additional support structure within the chamber is also not practical.
- the support structure within the chamber greatly increases the likelihood of non-uniform deposition on a substrate positioned opposite the target because the support structure may be placed between the target and the substrate. It would be beneficial to increase the size of the backing plate while not increasing the weight of the backing plate.
- FIG. 1 is a top view of a backing plate assembly 100 having cavities 102 formed therein.
- the cavities 102 are formed by removing backing plate material from the backing plate.
- the cavities 102 are formed by pouring backing plate material into a mold having a cavity forming protrusion and allowing the backing plate material to harden.
- the cavities 102 are formed by positioning cooling channels within backing plate material to form backing plate hills and then positioning the hills across the back surface of the backing plate with cavities 102 spaced therebetween.
- the backing plate assembly 100 may have a plurality of cooling fluid inlets/outlets 104 and a power coupling interface 106 positioned adjacent the cavities 102 . It is to be understood that while five cavities 102 have been shown, more or less cavities 102 may be present.
- the backing plate comprises aluminum, copper, stainless steel, titanium, or alloys thereof.
- the weight of the backing plate assembly 100 is reduced.
- the weight of the backing plate assembly 100 is reduced by an amount equal to the weight of the backing plate material that would normally be present within the cavities 102 .
- a backing plate assembly 100 that has at least one cavity 102 will be lighter and hence, less likely to bow.
- FIG. 2 is a cross sectional view of a backing plate assembly 200 according to another embodiment of the invention.
- the backing plate assembly 200 comprises a sputtering target 202 bonded to a backing plate 206 using a bonding material layer 204 .
- cavities 208 have been formed. Cooling channels 210 may also be present within the backing plate 206 .
- the cavities 208 and cooling channels 210 alternate along the back surface of the backing plate 206 . While only three cooling channels 210 have been shown, it is to be understood that the number of cooling channels 210 may be greater or less than three. Additionally, the shape of the cavities 208 is not restricted.
- the cavities 208 are shown with a rectangular cross section, but other shapes including dovetail, half-circle, triangular, etc. may be used.
- a magnetron may be placed behind a backing plate in order to confine the plasma created during sputtering.
- the magnetron confines the plasma across the sputtering target to ensure that the sputtering target erodes uniformly. Uniform target erosion maximizes a target's useful life and reduces processing downtime.
- a non-uniform back surface of a backing plate may present a problem for a magnetron to move smoothly across the backing plate.
- a cavity may limit the pattern of movement for a magnetron across a backing plate. It should be noted, however, that a magnetron may be beneficially used with a backing plate that has a cavity formed therein. The magnetron may be suspended just above the backing plate so that the magnetron may move across the, back surface of the backing plate without interference by the cavity.
- FIG. 3 is a top view of a backing plate assembly 300 with the cavities 304 filled with a filling material 312 .
- the filling material 312 covers the entire back surface of the backing plate 302 except for an interface opening 310 .
- the interface opening 310 permits a technician to easily access the cooling inlets/outlets 306 and a power coupling interface 308 .
- cooling channels are present within the backing plate 302 .
- the fill material 312 covers the backing plate 302 both within the cavities 304 and on top of the backing plate 302 through which the cooling channels are positioned.
- the fill material 312 is a single, unitary piece.
- FIG. 4 is a cross sectional view of a backing plate assembly 400 according to another embodiment of the invention.
- a sputtering target 402 is bonded to the backing plate 406 by a bonding material layer 404 .
- the fill material 410 should have a lower density than the backing plate 406 .
- the backing plate assembly 100 with fill material 410 formed within cavities 412 of the backing plate 406 has a lower weight than a backing plate 406 of the same thickness, but without cavities 412 formed therein.
- the fill material 410 is a polymer.
- the polymer may be any polymer having a density less than the density of the backing plate 406 .
- the fill material 410 is a metal having a density lower than the backing plate 406 material.
- the fill material 410 is not restricted, but should have a lower density than the backing plate 406 .
- the fill material 410 should comprise a material that does not interfere with the magnetic field generated by a magnetron that may be placed behind the backing plate 406 . By having a lower density than the backing plate 406 , the fill material 410 weighs less when filling the cavity 412 than backing plate material remaining in the cavity 412 .
- FIG. 5 is a cross sectional view of a backing plate assembly 500 having a magnetron plate 514 positioned behind the backing plate 506 .
- An exemplary magnetron that may be used is described in U.S. patent application Ser. No. 11/347,667, filed Feb. 3, 2006, which is hereby incorporated by reference in its entirety.
- the backing plate assembly 500 comprises a sputtering target 502 bonded to the backing plate 506 using a bonding material layer 504 .
- Cooling channels 508 are positioned within the backing plate 506 .
- Fill material 510 is deposited into cavities 512 formed into the backing plate 506 .
- the fill material 510 fills the cavities 512 and also is present on the backing plate 506 where the cooling channels 506 are positioned.
- the surface of the fill material 510 that is opposite the backing plate 506 is smooth to permit a magnetron plate 514 to move across the fill material 510 .
- the fill material 510 may be smoothed by conventional techniques well known in the art and is not restricted to any particular smoothing technique.
- the fill material 510 may be smoothed so that any friction between the fill material 510 and the rollers 526 upon which the magnetron plate 514 rests is minimal.
- the rollers 526 may move across the fill material 510 to adjust the location of the magnetic field across the target 502 .
- the rollers 526 are coupled with roller ball assemblies 516 . It is to be understood that the invention is not to be limited to rollers 526 for moving the magnetron plate 514 across the fill material 510 . Low friction sliding contact pads may also be used either in place of the rollers 526 or in addition to the rollers 526 .
- the magnetron plate 514 may be partially supported from above by coupling it to rails 520 and rolling on cylindrical roller assemblies 518 through multiple spring-loaded stud assemblies 522 .
- Each stud assembly 522 includes a threaded stud 524 screwed into a tapped hole in the magnetron plate 514 .
- the rollers 526 provide additional support for the magnetron plate 514 as it moves across the fill material 510 .
- a ball transfer Model NSMS 1 ⁇ 4 available from Ball Transfer Systems of Perryopolis, Pa., may be used as the rollers 526 .
- the rollers 526 may contact a back surface of the fill material 510 .
- FIG. 6 is a cross sectional view of an apparatus 600 according to another embodiment of the invention.
- a plurality of sputtering targets 614 a - f are positioned opposite a substrate 604 .
- the substrate 604 is positioned on a susceptor 602 .
- the processing area 616 is between the substrate 604 and the plurality of sputtering targets 614 a - f .
- the apparatus 600 has chamber walls 606 which are shielded by a shield 608 during sputtering.
- the targets 614 a - f may be sealed with the chamber walls 606 by a sealing surface 612 present on the targets 614 a - f and a sealing member 610 .
- the sealing member 610 is an O-ring.
- the targets 614 a - f are coupled with a backing plate 626 by a bonding material layer 624 .
- Cooling channels 622 may be positioned within the backing plate 626 .
- the cavities may be filed with filling material 620 to provide a smooth surface upon which a magnetron 618 may move.
- Anodes 628 are positioned between the adjacent sputtering targets 614 a - f and may be grounded.
- FIG. 6 shows six separate, isolated targets 614 a - f with a corresponding backing plate 626 and magnetron 618 , more or less sputtering targets 614 a - f may be present.
- the targets 614 a - f may be individually powered.
- An exemplary power coupling for the targets 614 a - f is described in U.S. patent application Ser. No. 11/428,226, filed Jun. 30, 2006, which is hereby incorporated by reference in its entirety.
- the targets 614 a - f may comprise target strips or target tiles placed adjacent one another to create a target strip in a manner described in U.S. patent application Ser. No. 11/424,467, filed Jun. 15, 2006 and U.S. patent application Ser. No. 11/424,478, filed Jun. 15, 2006, both of which are hereby incorporated by reference in their entirety.
- the number of backing plates 626 need not equal the number of sputtering targets 614 a - f .
- a single backing plate 626 is coupled to a plurality of targets 614 a - f .
- the number of magnetrons 618 need not correspond to the number of targets 614 a - f or backing plates 626 .
- a single backing plate 626 is used and a single magnetron 618 is used while a plurality of targets 614 a - f are used.
- a single backing plate 626 may be used while a plurality of magnetrons 626 and a plurality of targets 614 a - f may be used.
- a plurality of backing plates 626 may be used with a plurality of sputtering targets 614 a - f and a plurality of magnetrons 618 may be used.
- a plurality of sputtering targets 614 a - f may be coupled to a plurality of backing plates 626 with a single magnetron 618 positioned in back of the backing plates 626 .
Abstract
In certain embodiments, the invention comprises a backing plate for accommodating large area sputtering targets is disclosed. The backing plate assembly has cavities carved into the back surface of the backing plate. The backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target. The cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process.
Description
- This application is a continuation-in-part of co-pending U.S. patent application Ser. No. 11/426,271 (APPM/011105), filed Jun. 23, 2006, which is herein incorporated by reference.
- 1. Field of the Invention
- Embodiments of the present invention generally relate to a backing plate assembly for a physical vapor deposition (PVD) apparatus.
- 2. Description of the Related Art
- PVD using a magnetron is one method of depositing material onto a substrate. During a PVD process a target may be electrically biased so that ions generated in a process region can bombard the target surface with sufficient energy to dislodge atoms from the target. The process of biasing a target to cause the generation of a plasma that causes ions to bombard and remove atoms from the target surface is commonly called sputtering. The sputtered atoms travel generally toward the substrate being sputter coated, and the sputtered atoms are deposited on the substrate. Alternatively, the atoms react with a gas in the plasma, for example, nitrogen, to reactively deposit a compound on the substrate. Reactive sputtering is often used to form thin barrier and nucleation layers of titanium nitride or tantalum nitride on the substrate.
- Direct current (DC) sputtering and alternating current (AC) sputtering are forms of sputtering in which the target is biased to attract ions towards the target. The target may be biased to a negative bias in the range of about −100 to −600 V to attract positive ions of the working gas (e.g., argon) toward the target to sputter the atoms. Usually, the sides of the sputter chamber are covered with a shield to protect the chamber walls from sputter deposition. The shield may be electrically grounded and thus provide an anode in opposition to the target cathode to capacitively couple the target power to the plasma generated in the sputter chamber.
- To deposit thin films over large area substrates such as glass substrates, flat panel display substrates, solar panel substrates, and other suitable substrates, a sputtering target, and hence, the backing plate must be of substantial size. As backing plates increase in size, the weight of the backing plate may also increase.
- Therefore, there is a need in the art for large area backing plates that can be used in PVD chambers for large area substrates.
- In certain embodiments, the invention comprises a backing plate for accommodating large area sputtering targets is disclosed. The backing plate assembly has cavities carved into the back surface of the backing plate. The backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target. The cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1 is a top view of abacking plate assembly 100 havingcavities 102 formed therein. -
FIG. 2 is a cross sectional view of abacking plate assembly 200 according to another embodiment of the invention. -
FIG. 3 is a top view of abacking plate assembly 300 withcavities 304 filled withmaterial 312. -
FIG. 4 is a cross sectional view of abacking plate assembly 400 according to another embodiment of the invention. -
FIG. 5 is a cross sectional view of abacking plate assembly 500 having amagnetron plate 514 positioned behind the backing plate. -
FIG. 6 is a cross sectional view of anapparatus 600 according to another embodiment of the invention. - To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized in other embodiments without specific recitation.
- In certain embodiments, the invention comprises a backing plate for accommodating large area sputtering targets is disclosed. The backing plate assembly has cavities carved into the back surface of the backing plate. The backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target. The cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process.
- The invention is illustratively described and may be used in a physical vapor deposition system for processing large area substrates, such as a PVD system, available from AKT®, a subsidiary of Applied Materials, Inc., Santa Clara, Calif. However, it should be understood that the backing plate may have utility in other system configurations, including those systems configured to process large area round substrates. An exemplary system in which the present invention can be practiced is described in U.S. patent application Ser. No. 11/225,922, filed Sep. 13, 2005, which is hereby incorporated by reference in its entirety.
- As the size of substrates increases, so must the size of the sputtering target and hence, the backing plate. For flat panel displays and solar panels, backing plates having a length of greater than 1 meter are not uncommon. As the size of the backing plate increases, so does the weight. Therefore, a backing plate spanning a length of greater than 1 meter may bow due to the significant weight of the backing plate. Additionally, the backing plate may have cooling channels formed therein to control the temperature of the backing plate and the sputtering target. The cooling channels and fluid flowing therein may add to the weight of the backing plate.
- Placing an additional support member in the middle of the backing plate to compensate for any bowing is not practical and may interfere with the cooling channels. Any magnetron movement behind the backing plate may be impeded by the support structure. The support structure may impede the movement of the magnetron because the support structure may be positioned in the location where bowing is most likely to occur (i.e., the middle of the backing plate). The bowing is most likely to occur in the middle of the backing plate because the middle is the location furthest away from the edges of the backing plate where the backing plate is supported. The magnetron may be placed behind a backing plate to create a uniform plasma across a sputtering target and hence, uniformly erode the sputtering target. An additional support structure within the chamber is also not practical. The support structure within the chamber greatly increases the likelihood of non-uniform deposition on a substrate positioned opposite the target because the support structure may be placed between the target and the substrate. It would be beneficial to increase the size of the backing plate while not increasing the weight of the backing plate.
- One manner of increasing the size of the backing plate while not increasing the weight of the backing plate is to remove a portion of the backing plate material.
FIG. 1 is a top view of abacking plate assembly 100 havingcavities 102 formed therein. In one embodiment, thecavities 102 are formed by removing backing plate material from the backing plate. In another embodiment, thecavities 102 are formed by pouring backing plate material into a mold having a cavity forming protrusion and allowing the backing plate material to harden. In another embodiment, thecavities 102 are formed by positioning cooling channels within backing plate material to form backing plate hills and then positioning the hills across the back surface of the backing plate withcavities 102 spaced therebetween. Thebacking plate assembly 100 may have a plurality of cooling fluid inlets/outlets 104 and apower coupling interface 106 positioned adjacent thecavities 102. It is to be understood that while fivecavities 102 have been shown, more orless cavities 102 may be present. - In one embodiment, the backing plate comprises aluminum, copper, stainless steel, titanium, or alloys thereof. By having
cavities 102 in thebacking plate assembly 100, the weight of thebacking plate assembly 100 is reduced. The weight of thebacking plate assembly 100 is reduced by an amount equal to the weight of the backing plate material that would normally be present within thecavities 102. Thus, abacking plate assembly 100 that has at least onecavity 102 will be lighter and hence, less likely to bow. -
FIG. 2 is a cross sectional view of abacking plate assembly 200 according to another embodiment of the invention. Thebacking plate assembly 200 comprises asputtering target 202 bonded to abacking plate 206 using abonding material layer 204. Within thebacking plate 206,cavities 208 have been formed. Coolingchannels 210 may also be present within thebacking plate 206. Thecavities 208 and coolingchannels 210 alternate along the back surface of thebacking plate 206. While only three coolingchannels 210 have been shown, it is to be understood that the number ofcooling channels 210 may be greater or less than three. Additionally, the shape of thecavities 208 is not restricted. Thecavities 208 are shown with a rectangular cross section, but other shapes including dovetail, half-circle, triangular, etc. may be used. - A magnetron may be placed behind a backing plate in order to confine the plasma created during sputtering. The magnetron confines the plasma across the sputtering target to ensure that the sputtering target erodes uniformly. Uniform target erosion maximizes a target's useful life and reduces processing downtime. A non-uniform back surface of a backing plate may present a problem for a magnetron to move smoothly across the backing plate. A cavity may limit the pattern of movement for a magnetron across a backing plate. It should be noted, however, that a magnetron may be beneficially used with a backing plate that has a cavity formed therein. The magnetron may be suspended just above the backing plate so that the magnetron may move across the, back surface of the backing plate without interference by the cavity.
-
FIG. 3 is a top view of abacking plate assembly 300 with thecavities 304 filled with a fillingmaterial 312. The fillingmaterial 312 covers the entire back surface of thebacking plate 302 except for aninterface opening 310. Theinterface opening 310 permits a technician to easily access the cooling inlets/outlets 306 and a power coupling interface 308. In between thecavities 304, cooling channels are present within thebacking plate 302. Thefill material 312 covers thebacking plate 302 both within thecavities 304 and on top of thebacking plate 302 through which the cooling channels are positioned. In one embodiment, thefill material 312 is a single, unitary piece. - When
fill material 410 is formed into thecavities 412 of abacking plate 406, it is also formed across thebacking plate 406 where coolingchannels 408 are positioned so that a smooth, planar surface offill material 410 covers a portion of the backing plate.FIG. 4 is a cross sectional view of abacking plate assembly 400 according to another embodiment of the invention. Asputtering target 402 is bonded to thebacking plate 406 by abonding material layer 404. Thefill material 410 should have a lower density than thebacking plate 406. Thus, thebacking plate assembly 100 withfill material 410 formed withincavities 412 of thebacking plate 406 has a lower weight than abacking plate 406 of the same thickness, but withoutcavities 412 formed therein. - In one embodiment, the
fill material 410 is a polymer. The polymer may be any polymer having a density less than the density of thebacking plate 406. In another embodiment, thefill material 410 is a metal having a density lower than thebacking plate 406 material. Thefill material 410 is not restricted, but should have a lower density than thebacking plate 406. Additionally, thefill material 410 should comprise a material that does not interfere with the magnetic field generated by a magnetron that may be placed behind thebacking plate 406. By having a lower density than thebacking plate 406, thefill material 410 weighs less when filling thecavity 412 than backing plate material remaining in thecavity 412. -
FIG. 5 is a cross sectional view of abacking plate assembly 500 having amagnetron plate 514 positioned behind thebacking plate 506. An exemplary magnetron that may be used is described in U.S. patent application Ser. No. 11/347,667, filed Feb. 3, 2006, which is hereby incorporated by reference in its entirety. Thebacking plate assembly 500 comprises asputtering target 502 bonded to thebacking plate 506 using abonding material layer 504. Coolingchannels 508 are positioned within thebacking plate 506.Fill material 510 is deposited intocavities 512 formed into thebacking plate 506. Thefill material 510 fills thecavities 512 and also is present on thebacking plate 506 where the coolingchannels 506 are positioned. The surface of thefill material 510 that is opposite thebacking plate 506 is smooth to permit amagnetron plate 514 to move across thefill material 510. - The
fill material 510 may be smoothed by conventional techniques well known in the art and is not restricted to any particular smoothing technique. Thefill material 510 may be smoothed so that any friction between thefill material 510 and the rollers 526 upon which themagnetron plate 514 rests is minimal. The rollers 526 may move across thefill material 510 to adjust the location of the magnetic field across thetarget 502. The rollers 526 are coupled withroller ball assemblies 516. It is to be understood that the invention is not to be limited to rollers 526 for moving themagnetron plate 514 across thefill material 510. Low friction sliding contact pads may also be used either in place of the rollers 526 or in addition to the rollers 526. - The
magnetron plate 514 may be partially supported from above by coupling it torails 520 and rolling oncylindrical roller assemblies 518 through multiple spring-loadedstud assemblies 522. Eachstud assembly 522 includes a threadedstud 524 screwed into a tapped hole in themagnetron plate 514. The rollers 526 provide additional support for themagnetron plate 514 as it moves across thefill material 510. A ball transfer Model NSMS ¼, available from Ball Transfer Systems of Perryopolis, Pa., may be used as the rollers 526. The rollers 526 may contact a back surface of thefill material 510. -
FIG. 6 is a cross sectional view of anapparatus 600 according to another embodiment of the invention. Within theapparatus 600, a plurality of sputtering targets 614 a-f are positioned opposite asubstrate 604. Thesubstrate 604 is positioned on asusceptor 602. Theprocessing area 616 is between thesubstrate 604 and the plurality of sputtering targets 614 a-f. Theapparatus 600 haschamber walls 606 which are shielded by ashield 608 during sputtering. The targets 614 a-f may be sealed with thechamber walls 606 by a sealingsurface 612 present on the targets 614 a-f and a sealingmember 610. In one embodiment, the sealingmember 610 is an O-ring. The targets 614 a-f are coupled with abacking plate 626 by abonding material layer 624. Coolingchannels 622 may be positioned within thebacking plate 626. The cavities may be filed with fillingmaterial 620 to provide a smooth surface upon which amagnetron 618 may move.Anodes 628 are positioned between the adjacent sputtering targets 614 a-f and may be grounded. - It should be understood that while
FIG. 6 shows six separate, isolated targets 614 a-f with acorresponding backing plate 626 andmagnetron 618, more or less sputtering targets 614 a-f may be present. The targets 614 a-f may be individually powered. An exemplary power coupling for the targets 614 a-f is described in U.S. patent application Ser. No. 11/428,226, filed Jun. 30, 2006, which is hereby incorporated by reference in its entirety. The targets 614 a-f may comprise target strips or target tiles placed adjacent one another to create a target strip in a manner described in U.S. patent application Ser. No. 11/424,467, filed Jun. 15, 2006 and U.S. patent application Ser. No. 11/424,478, filed Jun. 15, 2006, both of which are hereby incorporated by reference in their entirety. - The number of
backing plates 626 need not equal the number of sputtering targets 614 a-f. In one embodiment, asingle backing plate 626 is coupled to a plurality of targets 614 a-f. Additionally, the number ofmagnetrons 618 need not correspond to the number of targets 614 a-f orbacking plates 626. In one embodiment, asingle backing plate 626 is used and asingle magnetron 618 is used while a plurality of targets 614 a-f are used. In another embodiment, asingle backing plate 626 may be used while a plurality ofmagnetrons 626 and a plurality of targets 614 a-f may be used. In yet another embodiment, a plurality ofbacking plates 626 may be used with a plurality of sputtering targets 614 a-f and a plurality ofmagnetrons 618 may be used. In still another embodiment, a plurality of sputtering targets 614 a-f may be coupled to a plurality ofbacking plates 626 with asingle magnetron 618 positioned in back of thebacking plates 626. - While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (29)
1. A backing plate assembly, comprising:
a backing plate comprising a front surface and a back surface having at least one cavity; and
a fill material formed over the back surface and within the at least one cavity, the fill material having a substantially smooth back surface.
2. The assembly of claim 1 , wherein the fill material is a polymer.
3. The assembly of claim 1 , wherein the backing plate comprises a material selected from the group consisting of aluminum, copper, stainless steel, titanium, and alloys thereof.
4. The assembly of claim 1 , further comprising:
at least one cooling channel within the backing plate, wherein the at least one cooling channel is adjacent to the at least one cavity.
5. The assembly of claim 1 , wherein the fill material has a lower density than the backing plate.
6. A backing plate assembly, comprising:
a backing plate having a front surface and a back surface, the back surface comprising one or more cavity portions and one or more raised portions; and
a fill material formed over the one or more cavity portions and the one or more raised portions.
7. The assembly of claim 6 , wherein the fill material is a polymer.
8. The assembly of claim 6 , wherein the backing plate comprises a material selected from the group consisting of aluminum, copper, stainless steel, titanium, and alloys thereof.
9. The assembly of claim 6 , further comprising:
at least one cooling channel within the backing plate.
10. The assembly of claim 6 , wherein the fill material has a lower density than the backing plate.
11. An apparatus, comprising:
a backing plate, the backing plate comprises:
a front surface and a back surface; and
at least one cavity formed in the back surface;
a sputtering target coupled with the front surface of the backing plate;
a fill material within the at least one cavity and covering the back surface of the backing plate; and
a magnetron movable between a first position and a second position along the fill material.
12. The apparatus of claim 11 , wherein the fill material has a lower density than the backing plate.
13. The apparatus of claim 11 , further comprising:
at least one cooling channel within the backing plate and adjacent the at least one cavity.
14. The apparatus of claim 13 , further comprising:
a plurality of cavities and a plurality of cooling channels, wherein the cavities and cooling channels alternate along the back surface of the backing plate.
15. The apparatus of claim 11 , wherein the fill material that is within the at least one cavity and covering the back surface of the backing plate is a single, unitary piece of polymer.
16. The apparatus of claim 11 , further comprising:
a plurality of backing plates, wherein each backing plate comprises:
a front surface and a back surface; and
at least one cavity formed in the back surface;
a fill material within the at least one cavity and covering each backing plate.
17. The apparatus of claim 16 , further comprising:
a plurality of magnetrons, wherein each backing plate has a corresponding magnetron.
18. The apparatus of claim 11 , further comprising:
a plurality of sputtering targets.
19. The apparatus of claim 11 , wherein the magnetron is coupled with at least one roller ball for moving the magnetron.
20. The apparatus of claim 11 , wherein the magnetron is coupled with at least one low friction sliding contact pad for moving the magnetron.
21. A sputtering target assembly, comprising:
a backing plate, the backing plate comprising:
a front surface and a back surface;
at least one cavity formed in the back surface of the backing plate;
a sputtering target coupled with the front surface of the backing plate; and
fill material within the at least one cavity and across the back surface of the backing plate, the fill material has a lower density than the backing plate.
22. The assembly of claim 21 , wherein the fill material comprises a polymer.
23. The assembly of claim 21 , further comprising:
at least one cooling channel within the backing plate, wherein the at least one cooling channel is adjacent the at least one cavity.
24. The assembly of claim 23 , further comprising:
a plurality of cavities and a plurality of cooling channels, wherein the cavities and cooling channels alternate along the back surface of the backing plate.
25. The assembly of claim 21 , wherein the backing plate comprises a material selected form the group consisting of aluminum, copper, stainless steel, titanium, and alloys thereof.
26. A sputtering method, comprising:
providing a backing plate having a front surface and a back surface with at least one cavity, the at least one cavity is filled with a material that has a lower density than the backing plate;
providing a target coupled to the front surface of the backing plate; and
applying a bias to the sputtering target assembly.
27. The method of claim 26 , further comprising:
moving a magnetron across the back surface of the backing plate.
28. The method of claim 27 , wherein the magnetron is moved by rolling the magnetron on at least one roller ball that is coupled with the magnetron.
29. The method of claim 27 , wherein the magnetron is moved by moving at least one low friction sliding contact pad that is coupled with the magnetron.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/483,134 US20070295598A1 (en) | 2006-06-23 | 2006-07-07 | Backing plate assembly |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/426,271 US7815782B2 (en) | 2006-06-23 | 2006-06-23 | PVD target |
US11/483,134 US20070295598A1 (en) | 2006-06-23 | 2006-07-07 | Backing plate assembly |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/426,271 Continuation-In-Part US7815782B2 (en) | 2006-06-23 | 2006-06-23 | PVD target |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070295598A1 true US20070295598A1 (en) | 2007-12-27 |
Family
ID=38872563
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/426,271 Active 2029-05-24 US7815782B2 (en) | 2006-06-23 | 2006-06-23 | PVD target |
US11/483,134 Abandoned US20070295598A1 (en) | 2006-06-23 | 2006-07-07 | Backing plate assembly |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/426,271 Active 2029-05-24 US7815782B2 (en) | 2006-06-23 | 2006-06-23 | PVD target |
Country Status (5)
Country | Link |
---|---|
US (2) | US7815782B2 (en) |
JP (1) | JP5324759B2 (en) |
KR (1) | KR100881692B1 (en) |
CN (2) | CN101100741B (en) |
TW (1) | TWI363806B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080067058A1 (en) * | 2006-09-15 | 2008-03-20 | Stimson Bradley O | Monolithic target for flat panel application |
TWI396820B (en) * | 2010-12-28 | 2013-05-21 | ||
WO2016028657A1 (en) * | 2014-08-20 | 2016-02-25 | Honeywell International Inc. | Encapsulated composite backing plate |
WO2017083113A1 (en) * | 2015-11-12 | 2017-05-18 | Honeywell International Inc. | Sputter target backing plate assemblies with cooling structures |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7550055B2 (en) * | 2005-05-31 | 2009-06-23 | Applied Materials, Inc. | Elastomer bonding of large area sputtering target |
US20080078268A1 (en) | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
US20080197015A1 (en) * | 2007-02-16 | 2008-08-21 | Terry Bluck | Multiple-magnetron sputtering source with plasma confinement |
US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
JP5390796B2 (en) * | 2008-06-19 | 2014-01-15 | 国立大学法人東北大学 | Magnetron sputtering method and magnetron sputtering apparatus |
US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
US9103018B2 (en) * | 2009-05-08 | 2015-08-11 | General Plasma, Inc. | Sputtering target temperature control utilizing layers having predetermined emissivity coefficients |
KR101964487B1 (en) * | 2010-03-01 | 2019-04-02 | 가부시키가이샤 알박 | Sputtering device |
US8703233B2 (en) | 2011-09-29 | 2014-04-22 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets by cold spray |
CN103374702B (en) * | 2012-04-24 | 2015-08-12 | 上海北玻镀膜技术工业有限公司 | A kind of Anti-splash device |
KR102081597B1 (en) * | 2012-12-21 | 2020-04-16 | 엘지디스플레이 주식회사 | Sputtering apparatus and method for sputtering of oxide semiconductor material |
US11183375B2 (en) | 2014-03-31 | 2021-11-23 | Applied Materials, Inc. | Deposition system with multi-cathode and method of manufacture thereof |
WO2015164257A1 (en) * | 2014-04-21 | 2015-10-29 | Kurt J. Lesker Company | Surrounding field sputtering source |
CN106574362B (en) * | 2014-08-08 | 2019-06-11 | 株式会社爱发科 | Target assembly |
US10431440B2 (en) | 2015-12-20 | 2019-10-01 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
US10325763B2 (en) * | 2017-01-20 | 2019-06-18 | Applied Materials, Inc. | Physical vapor deposition processing systems target cooling |
US10685821B2 (en) | 2017-08-18 | 2020-06-16 | Applied Materials, Inc. | Physical vapor deposition processing systems target cooling |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5487822A (en) * | 1993-11-24 | 1996-01-30 | Applied Materials, Inc. | Integrated sputtering target assembly |
US5833815A (en) * | 1996-04-24 | 1998-11-10 | Anelva Corporation | Sputter deposition system |
US6340415B1 (en) * | 1998-01-05 | 2002-01-22 | Applied Materials, Inc. | Method and apparatus for enhancing a sputtering target's lifetime |
US6344117B2 (en) * | 1998-08-28 | 2002-02-05 | Showa Denko K.K. | Backing plate for sputtering |
US20030168494A1 (en) * | 2002-03-07 | 2003-09-11 | The Boeing Company | Preforms for forming machined structural assemblies |
US7101466B2 (en) * | 2003-09-19 | 2006-09-05 | Kdf Electronic + Vacuum Services Inc | Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2307649B2 (en) * | 1973-02-16 | 1980-07-31 | Robert Bosch Gmbh, 7000 Stuttgart | Arrangement for sputtering different materials on a substrate |
JPH0220210Y2 (en) * | 1986-08-25 | 1990-06-01 | ||
EP0625792B1 (en) * | 1993-05-19 | 1997-05-28 | Applied Materials, Inc. | Apparatus and process for increasing uniformity of sputtering rate in sputtering apparatus |
US5433835B1 (en) * | 1993-11-24 | 1997-05-20 | Applied Materials Inc | Sputtering device and target with cover to hold cooling fluid |
JP3398452B2 (en) * | 1994-01-19 | 2003-04-21 | 株式会社ソニー・ディスクテクノロジー | Sputtering equipment |
US5518593A (en) * | 1994-04-29 | 1996-05-21 | Applied Komatsu Technology, Inc. | Shield configuration for vacuum chamber |
US5593082A (en) * | 1994-11-15 | 1997-01-14 | Tosoh Smd, Inc. | Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby |
US6073830A (en) | 1995-04-21 | 2000-06-13 | Praxair S.T. Technology, Inc. | Sputter target/backing plate assembly and method of making same |
US6093293A (en) * | 1997-12-17 | 2000-07-25 | Balzers Hochvakuum Ag | Magnetron sputtering source |
JP2000144399A (en) * | 1998-10-30 | 2000-05-26 | Applied Materials Inc | Sputtering device |
US6164519A (en) * | 1999-07-08 | 2000-12-26 | Praxair S.T. Technology, Inc. | Method of bonding a sputtering target to a backing plate |
US6398929B1 (en) * | 1999-10-08 | 2002-06-04 | Applied Materials, Inc. | Plasma reactor and shields generating self-ionized plasma for sputtering |
US6228236B1 (en) * | 1999-10-22 | 2001-05-08 | Applied Materials, Inc. | Sputter magnetron having two rotation diameters |
US6296747B1 (en) * | 2000-06-22 | 2001-10-02 | Applied Materials, Inc. | Baffled perforated shield in a plasma sputtering reactor |
US6358376B1 (en) * | 2000-07-10 | 2002-03-19 | Applied Materials, Inc. | Biased shield in a magnetron sputter reactor |
JP2003183822A (en) * | 2001-12-19 | 2003-07-03 | Mitsui Mining & Smelting Co Ltd | Sputtering target and manufacturing method therefor |
JP2004183022A (en) * | 2002-12-02 | 2004-07-02 | Ulvac Japan Ltd | Target device and sputtering system |
US7588669B2 (en) * | 2005-07-20 | 2009-09-15 | Ascentool, Inc. | Single-process-chamber deposition system |
-
2006
- 2006-06-23 US US11/426,271 patent/US7815782B2/en active Active
- 2006-07-07 US US11/483,134 patent/US20070295598A1/en not_active Abandoned
-
2007
- 2007-06-14 TW TW096121559A patent/TWI363806B/en active
- 2007-06-22 CN CN2007101230335A patent/CN101100741B/en active Active
- 2007-06-22 JP JP2007164564A patent/JP5324759B2/en not_active Expired - Fee Related
- 2007-06-22 KR KR1020070061727A patent/KR100881692B1/en active IP Right Grant
- 2007-06-22 CN CN201010518678.0A patent/CN101979705B/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5487822A (en) * | 1993-11-24 | 1996-01-30 | Applied Materials, Inc. | Integrated sputtering target assembly |
US5833815A (en) * | 1996-04-24 | 1998-11-10 | Anelva Corporation | Sputter deposition system |
US6340415B1 (en) * | 1998-01-05 | 2002-01-22 | Applied Materials, Inc. | Method and apparatus for enhancing a sputtering target's lifetime |
US6344117B2 (en) * | 1998-08-28 | 2002-02-05 | Showa Denko K.K. | Backing plate for sputtering |
US20030168494A1 (en) * | 2002-03-07 | 2003-09-11 | The Boeing Company | Preforms for forming machined structural assemblies |
US20040004108A1 (en) * | 2002-03-07 | 2004-01-08 | The Boeing Company | Preforms for forming machined structural assemblies |
US20040094604A1 (en) * | 2002-03-07 | 2004-05-20 | The Boeing Company | Machined structural assemblies formed from preforms |
US6910616B2 (en) * | 2002-03-07 | 2005-06-28 | The Boeing Company | Preforms for forming machined structural assemblies |
US7101466B2 (en) * | 2003-09-19 | 2006-09-05 | Kdf Electronic + Vacuum Services Inc | Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080067058A1 (en) * | 2006-09-15 | 2008-03-20 | Stimson Bradley O | Monolithic target for flat panel application |
TWI396820B (en) * | 2010-12-28 | 2013-05-21 | ||
WO2016028657A1 (en) * | 2014-08-20 | 2016-02-25 | Honeywell International Inc. | Encapsulated composite backing plate |
WO2017083113A1 (en) * | 2015-11-12 | 2017-05-18 | Honeywell International Inc. | Sputter target backing plate assemblies with cooling structures |
Also Published As
Publication number | Publication date |
---|---|
CN101100741B (en) | 2011-07-06 |
TWI363806B (en) | 2012-05-11 |
KR20070122170A (en) | 2007-12-28 |
CN101100741A (en) | 2008-01-09 |
TW200804610A (en) | 2008-01-16 |
US7815782B2 (en) | 2010-10-19 |
CN101979705B (en) | 2014-04-23 |
JP5324759B2 (en) | 2013-10-23 |
JP2008001988A (en) | 2008-01-10 |
KR100881692B1 (en) | 2009-02-06 |
US20070295596A1 (en) | 2007-12-27 |
CN101979705A (en) | 2011-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20070295598A1 (en) | Backing plate assembly | |
JP3134977U (en) | Cooling PVD shield | |
US7316763B2 (en) | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween | |
JP5222281B2 (en) | Reactive sputtering of zinc oxide transparent conductive oxide on large area substrates | |
US7550055B2 (en) | Elastomer bonding of large area sputtering target | |
US7744731B2 (en) | Sputtering apparatus of forming thin film | |
WO2006127221A2 (en) | Sputtering target tiles having structured edges separated by a gap | |
US6171659B1 (en) | Process for the formation of a coating on a substrate and device for the use this process | |
JPH01104772A (en) | Magnetron sputter coating apparatus | |
US6623610B1 (en) | Magnetron sputtering target for magnetic materials | |
JP5265149B2 (en) | Cooling dark shield for multi-cathode design | |
US20080127887A1 (en) | Vertically mounted rotary cathodes in sputtering system on elevated rails | |
US20080296142A1 (en) | Swinging magnets to improve target utilization | |
US20120000424A1 (en) | Cooled dark space shield for multi-cathode design | |
US20080000768A1 (en) | Electrically Coupled Target Panels | |
US20080011601A1 (en) | Cooled anodes | |
US5271817A (en) | Design for sputter targets to reduce defects in refractory metal films | |
JPH06108241A (en) | Sputtering device | |
US20080023319A1 (en) | Magnetron assembly | |
KR101472605B1 (en) | Method for coating a substrate, equipment for implementing said method and metal supply device for such equipment | |
US20100089748A1 (en) | Control of erosion profile on a dielectric rf sputter target | |
JPH08269705A (en) | Sputtering device | |
JP2004083974A (en) | Film-forming method by sputtering and magnetron sputtering apparatus | |
KR20080061911A (en) | Sputter for fabricating liquid crystal display device | |
US20080067058A1 (en) | Monolithic target for flat panel application |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:INAGAWA, MAKOTO;LE, HIENMINH HUU;STIMSON, BRADLEY O;AND OTHERS;REEL/FRAME:019252/0472;SIGNING DATES FROM 20060908 TO 20060911 Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:INAGAWA, MAKOTO;LE, HIENMINH HUU;STIMSON, BRADLEY O;AND OTHERS;SIGNING DATES FROM 20060908 TO 20060911;REEL/FRAME:019252/0472 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |