US20070228608A1 - Preserving Filled Features when Vacuum Wiping - Google Patents
Preserving Filled Features when Vacuum Wiping Download PDFInfo
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- US20070228608A1 US20070228608A1 US11/694,193 US69419307A US2007228608A1 US 20070228608 A1 US20070228608 A1 US 20070228608A1 US 69419307 A US69419307 A US 69419307A US 2007228608 A1 US2007228608 A1 US 2007228608A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/003—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
- B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
- B29C2043/025—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/14—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles in several steps
- B29C2043/141—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles in several steps for making single layer articles
- B29C2043/142—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles in several steps for making single layer articles by moving a single mould or the article progressively, i.e. portionwise
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/34—Feeding the material to the mould or the compression means
- B29C2043/3433—Feeding the material to the mould or the compression means using dispensing heads, e.g. extruders, placed over or apart from the moulds
- B29C2043/3438—Feeding the material to the mould or the compression means using dispensing heads, e.g. extruders, placed over or apart from the moulds moving during dispensing over the moulds, e.g. laying up
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/34—Feeding the material to the mould or the compression means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2105/00—Condition, form or state of moulded material or of the material to be shaped
- B29K2105/0002—Condition, form or state of moulded material or of the material to be shaped monomers or prepolymers
Definitions
- the field of the invention relates generally to nano-fabrication of structures. More particularly, the present invention is directed to a method of curing imprint material on the template.
- Nano-fabrication involves the fabrication of very small structures, e.g., having features on the order of nanometers or smaller.
- One area in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits.
- nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed.
- Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like.
- An exemplary nano-fabrication technique is commonly referred to as imprint lithography.
- Exemplary imprint lithography processes are described in detail in numerous publications, such as United States patent application publication 2004/0065976 filed as U.S. patent application Ser. No. 10/264,960, entitled, “Method and a Mold to Arrange Features on a Substrate to Replicate Features having Minimal Dimensional Variability”; United States patent application publication 2004/0065252 filed as U.S. patent application Ser. No. 10/264,926, entitled “Method of Forming a Layer on a Substrate to Facilitate Fabrication of Metrology Standards”; and U.S. Pat. No. 6,936,194, entitled “Functional Patterning Material for Imprint Lithography Processes,” all of which are assigned to the assignee of the present invention and all of which are incorporated by reference herein.
- the fundamental imprint lithography technique disclosed in each of the aforementioned United States patent application publications and United States patent includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate.
- the substrate may be positioned upon a motion stage to obtain a desired position to facilitate patterning thereof.
- a template is employed spaced-apart from the substrate with a formable liquid present between the template and the substrate.
- the liquid is solidified to form a solidified layer that has a pattern recorded therein that is conforming to a shape of the surface of the template in contact with the liquid.
- the template is then separated from the solidified layer such that the template and the substrate are spaced-apart.
- the substrate and the solidified layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the solidified layer.
- FIG. 1 is a simplified side view of a lithographic system having a template spaced-apart from a substrate;
- FIG. 2 illustrates methods or steps of curing to form a partially cured film
- FIG. 3 illustrates methods or steps for forming a thin, gelled monomer film
- FIG. 4 illustrates a process of curing to preserve features before vacuum wiping.
- a system 8 to form a relief pattern on a substrate 12 includes a stage 10 upon which substrate 12 is supported, and a template 14 having a patterning surface 18 thereon.
- substrate 12 may be coupled to a substrate chuck (not shown), the substrate chuck (not shown) being any chuck including, but not limited to, vacuum and electromagnetic.
- Template 14 and/or mold 16 may be formed from materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, and hardened sapphire.
- patterning surface 18 comprises features defined by a plurality of spaced-apart recesses 17 and protrusions 19 .
- patterning surface 18 may be substantially smooth and/or planar. Patterning surface 18 may define an original pattern that forms the basis of a pattern to be formed on substrate 12 .
- Template 14 may be coupled to an imprint head 20 to facilitate movement of template 14 , and therefore, mold 16 .
- template 14 may be coupled to a template chuck (not shown), the template chuck (not shown) being any chuck including, but not limited to, vacuum and electromagnetic.
- a fluid dispense system 22 is coupled to be selectively placed in fluid communication with substrate 12 so as to deposit polymeric material 24 thereon. It should be understood that polymeric material 24 may be deposited using any known technique, e.g., drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), and the like.
- a source 26 of energy 28 is coupled to direct energy 28 along a path 30 .
- Imprint head 20 and stage 10 are configured to arrange mold 16 and substrate 12 , respectively, to be in superimposition and disposed in path 30 . Either imprint head 20 , stage 10 , or both vary a distance between mold 16 and substrate 12 to define a desired volume therebetween that is filled by polymeric material 24 .
- polymeric material 24 is disposed upon substrate 12 before the desired volume is defined between mold 16 and substrate 12 .
- polymeric material 24 may fill the volume after the desired volume has been obtained.
- source 26 produces energy 28 , e.g., broadband energy that causes polymeric material 24 to solidify and/or cross-link conforming to the shape of a surface 25 of substrate 12 and patterning surface 18 , defining a patterned layer 50 on substrate 12 .
- the broadband energy may comprise an actinic component including, but not limited to, ultraviolet wavelengths, thermal energy, electromagnetic energy, visible light and the like.
- the actinic component employed is known to one skilled in the art and typically depends on the material from which imprinting layer 12 is formed. Control of this process may be regulated by a processor 32 that is in data communication with stage 10 , imprint head 20 , fluid dispense system 22 , source 26 , operating on a computer readable program stored in memory 34 .
- a monomer In imprinting, a monomer can flow out of the active area and create monomer extrusions.
- the extrusions can impede subsequent imprinting, become a source of particle contamination, and cause comets to form in subsequent spin coating process steps.
- fluid may be extracted from some features. Also, it has been observed that when a template with a contiguous monomer film was brought into contact with a wafer to form an imprint, some of the monomer contained within the features was drawn out of the features and into the formation of the residual layer. Once the residual layer of fluid surrounding the features had reached equilibrium, fluid began to fill the features that had been evacuated.
- a curing process is used to adhere the imprint to a wafer or substrate.
- Monomer is deposited on a template and then partially cured using a UV exposure. The exposure is controlled so that the imprint is cured past the gel point, but still retains a thin liquid layer of uncured monomer at the surface that will bond with the wafer. Further, this partially cured layer enables the alignment adjustments between the template and the substrate to be performed after contact between the two without pulling any monomer out of the features.
- the retention of a thin liquid monomer layer is aided by oxygen poisoning that inhibits curing of monomer exposed to air.
- the viscosity of the bulk of the monomer is increased by the partial cure slowing any further flow.
- the liquid monomer surface is brought into contact with the wafer, and the imprint is fully cured by a second exposure of UV light. The imprint is adhered to the wafer by this curing step.
- Imprinting in this manner may be achieved in the following ways:
- a contiguous film of monomer 201 is deposited on the template 202 filling all the features.
- a blanket UV light exposure 203 may be used to achieve the partial cure.
- a scanning UV light 206 that follows behind the monomer 204 dispenser 207 may be employed to partially cure the monomer shortly after it is deposited on the template 205 .
- a contiguous film of monomer 301 is deposited on the template 302 filling all the features.
- a vacuum wipe 303 may be used to remove excess monomer.
- a blanket UV light exposure 305 may be used to achieve the partial cure, such as in FIG. 2A .
- a scanning UV light that follows behind the vacuum wipe may be employed to partially cure the monomer shortly after the wipe passes over the template.
- a contiguous film of monomer 401 is deposited on the template 402 filling all the features.
- a short blanket UV light exposure (not shown) is used to achieve the partial cure (similar to FIG. 2A ), such that only the monomer 401 in the template features is gelled.
- a vacuum wipe 404 is used to remove excess monomer 401 .
- two initiators, A and B may be incorporated into the monomer (e.g., any of monomers 201 , 301 , 401 ).
- Initiators A and B are sensitive to different wavelengths of UV light. Initiator A is used to achieve the full cure of the imprint in the standard manner, while initiator B is incorporated at a much lower concentration than A, and the partial cure of the imprint is achieved by exposing the monomer with UV light at the wavelength for which initiator B is sensitive. This method may give increased control over the partial cure of the monomer.
- the material (e.g., any of monomers 201 , 301 , 401 ) employed in embodiments of the present invention may be composed of a variety of polymerizable materials. Generally, any photopolymerizable material may be used. Photopolymerizable materials may include a mixture of monomers and a photoinitiator. In some embodiments, the curable liquid may include one or more commercially available negative photoresist materials. Viscosity of the photoresist material may be reduced by diluting the liquid photoresist with a suitable solvent.
- a suitable curable liquid (e.g., any of monomers 201 , 301 , 401 ) comprises a monomer, a silylated monomer, and an initiator.
- a crosslinking agent and a dimethyl siloxane derivative may also be included.
- Monomers e.g., any of monomers 201 , 301 , 401
- Monomers include, but are not limited to, acrylate and methacylate monomers.
- Examples of monomers (e.g., any of monomers 201 , 301 , 401 ) include, but are not limited to, butyl acrylate, methyl acrylate, methyl methacrylate, or mixtures thereof.
- the monomer makes up approximately 25 to 50% by weight of the curable liquid.
- the monomer may ensure adequate solubility of the photoinitiator in the curable liquid.
- the monomer may provide adhesion to an underlying organic transfer layer, when used.
- the curable liquid may also comprise a silylated monomer.
- Silylated monomers in general are polymerizable compounds that include a silicon group. Classes of silylated monomers include, but are not limited to, silane acrylyl and silane methacrylyl derivatives. Specific examples include methacryloxypropyl tris(tri-methylsiloxy)silane and (3-acryloxypropyl)tris(tri-methoxysiloxy)-silane. Silylated monomers may be present in amounts from 25 to 50% by weight.
- the curable liquid may also include a dimethyl siloxane derivative.
- dimethyl siloxane derivatives include, but are not limited to, (acryloxypropyl)methylsiloxane dimethylsiloxane copolymer, acryloxypropyl methylsiloxane homopolymer, and acryloxy terminated polydimethylsiloxane.
- Dimethyl siloxane derivatives are present in amounts from about 0 to 50% by weight.
- the silylated monomers and the dimethyl siloxane derivatives may impart a high oxygen etch resistance to the cured liquid. Additionally, both the silylated monomers and the dimethyl siloxane derivatives may reduce the surface energy of the cured liquid, therefore increasing the ability of the template to release from the surface.
- the silylated monomers and dimethyl siloxane derivatives listed herein are all commercially available from Gelest, Inc.
- the initiator may be a photoinitiator.
- initiators include, but are not limited to, alpha-hydroxyketones (e.g., 1-hydroxycyclohexyl phenyl ketone, sold by Ciba-Geigy Specialty Chemical Division as Irgacure 184), and acylphosphine oxide initiators (e.g., 1-henylbis(2,4,6-trimethyl benzoyl) phosphine oxide, sold by Ciba-Geigy Specialty Chemical Division as Irgacure 819.
- alpha-hydroxyketones e.g., 1-hydroxycyclohexyl phenyl ketone, sold by Ciba-Geigy Specialty Chemical Division as Irgacure 184
- acylphosphine oxide initiators e.g., 1-henylbis(2,4,6-trimethyl benzoyl) phosphine oxide, sold by Ciba-Gei
- the curable liquid may also comprise a crosslinking agent.
- Crosslinking agents are monomers that include two or more polymerizable groups.
- polyfunctional siloxane derivatives may be used as a crosslinking agent.
- An example of a polyfunctional siloxane derivative is 1,3-bis(3-methacryloxypropyl)-tetramethyl disiloxane.
- a curable liquid may comprise a mixture of 50% by weight of n-butyl acrylate and 50% (3-acryloxypropyl)tris-trimethylsiloxane-silane. To this mixture 3% by weight mixture of a 1:1 Irgacure 819 and Irgacure 184 and 5% of the crosslinker 1,3-bis(3-methacryloxypropyl)-tetramethyl disiloxane may be added. The viscosity of this mixture is less than 30 cps measured at about 25° C.
- the material may also be the material as described in BAILEY ET AL., Step and Flash Imprint Lithography: Template Surface Treatment and Defect Analysis, Journal of Vacuum Science, B 18(6), pp. 3572-3577 Nov. 1, 2000, which is incorporated by reference herein.
- the present invention provides a means of preventing material from flowing out of the active area and the features when imprinting.
- the capillary force exerted on the monomer when it is laminated between the template and wafer is not present in an open film on the template. Hence, the monomer is retained, where it was deposited, within the active area of the template.
- the fill time may be reduced to the amount of time required to dispense the monomer and partially cure.
- the only time-limiting step in imprinting would then be the duration of time required to form a uniform residual layer free of trapped air.
- previous experiments have shown that rapid, uniform imprints may be created by featureless blank mesa templates and thin fluid residual layers. The process proposed above may transform any template, regardless of features density and size, into a featureless template.
Abstract
Description
- This application for patent claims priority to U.S. Provisional Patent Application Ser. No. 60/788,778, which is hereby incorporated by reference herein.
- The field of the invention relates generally to nano-fabrication of structures. More particularly, the present invention is directed to a method of curing imprint material on the template.
- Nano-fabrication involves the fabrication of very small structures, e.g., having features on the order of nanometers or smaller. One area in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits. As the semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed. Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like.
- An exemplary nano-fabrication technique is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as United States patent application publication 2004/0065976 filed as U.S. patent application Ser. No. 10/264,960, entitled, “Method and a Mold to Arrange Features on a Substrate to Replicate Features having Minimal Dimensional Variability”; United States patent application publication 2004/0065252 filed as U.S. patent application Ser. No. 10/264,926, entitled “Method of Forming a Layer on a Substrate to Facilitate Fabrication of Metrology Standards”; and U.S. Pat. No. 6,936,194, entitled “Functional Patterning Material for Imprint Lithography Processes,” all of which are assigned to the assignee of the present invention and all of which are incorporated by reference herein.
- The fundamental imprint lithography technique disclosed in each of the aforementioned United States patent application publications and United States patent includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate may be positioned upon a motion stage to obtain a desired position to facilitate patterning thereof. To that end, a template is employed spaced-apart from the substrate with a formable liquid present between the template and the substrate. The liquid is solidified to form a solidified layer that has a pattern recorded therein that is conforming to a shape of the surface of the template in contact with the liquid. The template is then separated from the solidified layer such that the template and the substrate are spaced-apart. The substrate and the solidified layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the solidified layer.
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FIG. 1 is a simplified side view of a lithographic system having a template spaced-apart from a substrate; -
FIG. 2 illustrates methods or steps of curing to form a partially cured film; -
FIG. 3 illustrates methods or steps for forming a thin, gelled monomer film; and -
FIG. 4 illustrates a process of curing to preserve features before vacuum wiping. - Referring to
FIG. 1 , asystem 8 to form a relief pattern on asubstrate 12 includes astage 10 upon whichsubstrate 12 is supported, and atemplate 14 having apatterning surface 18 thereon. In a further embodiment,substrate 12 may be coupled to a substrate chuck (not shown), the substrate chuck (not shown) being any chuck including, but not limited to, vacuum and electromagnetic. -
Template 14 and/ormold 16 may be formed from materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, and hardened sapphire. As shown,patterning surface 18 comprises features defined by a plurality of spaced-apart recesses 17 andprotrusions 19. However, in a further embodiment, patterningsurface 18 may be substantially smooth and/or planar.Patterning surface 18 may define an original pattern that forms the basis of a pattern to be formed onsubstrate 12. -
Template 14 may be coupled to animprint head 20 to facilitate movement oftemplate 14, and therefore,mold 16. In a further embodiment,template 14 may be coupled to a template chuck (not shown), the template chuck (not shown) being any chuck including, but not limited to, vacuum and electromagnetic. Afluid dispense system 22 is coupled to be selectively placed in fluid communication withsubstrate 12 so as to depositpolymeric material 24 thereon. It should be understood thatpolymeric material 24 may be deposited using any known technique, e.g., drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), and the like. - A
source 26 ofenergy 28 is coupled todirect energy 28 along apath 30.Imprint head 20 andstage 10 are configured to arrangemold 16 andsubstrate 12, respectively, to be in superimposition and disposed inpath 30. Eitherimprint head 20,stage 10, or both vary a distance betweenmold 16 andsubstrate 12 to define a desired volume therebetween that is filled bypolymeric material 24. - Referring to
FIG. 1 , typically,polymeric material 24 is disposed uponsubstrate 12 before the desired volume is defined betweenmold 16 andsubstrate 12. However,polymeric material 24 may fill the volume after the desired volume has been obtained. After the desired volume is filled withpolymeric material 24,source 26 producesenergy 28, e.g., broadband energy that causespolymeric material 24 to solidify and/or cross-link conforming to the shape of asurface 25 ofsubstrate 12 andpatterning surface 18, defining a patterned layer 50 onsubstrate 12. - The broadband energy may comprise an actinic component including, but not limited to, ultraviolet wavelengths, thermal energy, electromagnetic energy, visible light and the like. The actinic component employed is known to one skilled in the art and typically depends on the material from which
imprinting layer 12 is formed. Control of this process may be regulated by aprocessor 32 that is in data communication withstage 10,imprint head 20,fluid dispense system 22,source 26, operating on a computer readable program stored inmemory 34. - In imprinting, a monomer can flow out of the active area and create monomer extrusions. The extrusions can impede subsequent imprinting, become a source of particle contamination, and cause comets to form in subsequent spin coating process steps.
- Further, when attempting to create thin fluid films by a vacuum wiping monomer dispensed on the surface of a template, fluid may be extracted from some features. Also, it has been observed that when a template with a contiguous monomer film was brought into contact with a wafer to form an imprint, some of the monomer contained within the features was drawn out of the features and into the formation of the residual layer. Once the residual layer of fluid surrounding the features had reached equilibrium, fluid began to fill the features that had been evacuated.
- Disclosed herein is a method/process for curing imprint on a template prior to contact with a substrate. A curing process is used to adhere the imprint to a wafer or substrate. Monomer is deposited on a template and then partially cured using a UV exposure. The exposure is controlled so that the imprint is cured past the gel point, but still retains a thin liquid layer of uncured monomer at the surface that will bond with the wafer. Further, this partially cured layer enables the alignment adjustments between the template and the substrate to be performed after contact between the two without pulling any monomer out of the features.
- The retention of a thin liquid monomer layer is aided by oxygen poisoning that inhibits curing of monomer exposed to air. The viscosity of the bulk of the monomer is increased by the partial cure slowing any further flow. After the partial cure is complete, the liquid monomer surface is brought into contact with the wafer, and the imprint is fully cured by a second exposure of UV light. The imprint is adhered to the wafer by this curing step.
- Imprinting in this manner may be achieved in the following ways:
- Referring to
FIG. 2A , a contiguous film ofmonomer 201 is deposited on thetemplate 202 filling all the features. A blanketUV light exposure 203 may be used to achieve the partial cure. Alternatively, referring toFIG. 2B , ascanning UV light 206 that follows behind themonomer 204dispenser 207 may be employed to partially cure the monomer shortly after it is deposited on thetemplate 205. - Referring to
FIG. 3 , a contiguous film ofmonomer 301 is deposited on thetemplate 302 filling all the features. A vacuum wipe 303 may be used to remove excess monomer. A blanket UV light exposure 305 may be used to achieve the partial cure, such as inFIG. 2A . Alternatively, similar toFIG. 2B , a scanning UV light that follows behind the vacuum wipe may be employed to partially cure the monomer shortly after the wipe passes over the template. - Referring to
FIG. 4 , a contiguous film ofmonomer 401 is deposited on thetemplate 402 filling all the features. A short blanket UV light exposure (not shown) is used to achieve the partial cure (similar toFIG. 2A ), such that only themonomer 401 in the template features is gelled. A vacuum wipe 404 is used to removeexcess monomer 401. - Alternatively, two initiators, A and B, may be incorporated into the monomer (e.g., any of
monomers - The material (e.g., any of
monomers - In an embodiment, a suitable curable liquid (e.g., any of
monomers monomers monomers - The curable liquid may also comprise a silylated monomer. Silylated monomers in general are polymerizable compounds that include a silicon group. Classes of silylated monomers include, but are not limited to, silane acrylyl and silane methacrylyl derivatives. Specific examples include methacryloxypropyl tris(tri-methylsiloxy)silane and (3-acryloxypropyl)tris(tri-methoxysiloxy)-silane. Silylated monomers may be present in amounts from 25 to 50% by weight. The curable liquid may also include a dimethyl siloxane derivative. Examples of dimethyl siloxane derivatives include, but are not limited to, (acryloxypropyl)methylsiloxane dimethylsiloxane copolymer, acryloxypropyl methylsiloxane homopolymer, and acryloxy terminated polydimethylsiloxane. Dimethyl siloxane derivatives are present in amounts from about 0 to 50% by weight. The silylated monomers and the dimethyl siloxane derivatives may impart a high oxygen etch resistance to the cured liquid. Additionally, both the silylated monomers and the dimethyl siloxane derivatives may reduce the surface energy of the cured liquid, therefore increasing the ability of the template to release from the surface. The silylated monomers and dimethyl siloxane derivatives listed herein are all commercially available from Gelest, Inc.
- Any material that may initiate a free radical reaction may be used as the initiator. For activating light curing of the curable material, the initiator may be a photoinitiator. Examples of initiators include, but are not limited to, alpha-hydroxyketones (e.g., 1-hydroxycyclohexyl phenyl ketone, sold by Ciba-Geigy Specialty Chemical Division as Irgacure 184), and acylphosphine oxide initiators (e.g., 1-henylbis(2,4,6-trimethyl benzoyl) phosphine oxide, sold by Ciba-Geigy Specialty Chemical Division as Irgacure 819.
- The curable liquid may also comprise a crosslinking agent. Crosslinking agents are monomers that include two or more polymerizable groups. In one embodiment, polyfunctional siloxane derivatives may be used as a crosslinking agent. An example of a polyfunctional siloxane derivative is 1,3-bis(3-methacryloxypropyl)-tetramethyl disiloxane.
- In one example, a curable liquid may comprise a mixture of 50% by weight of n-butyl acrylate and 50% (3-acryloxypropyl)tris-trimethylsiloxane-silane. To this mixture 3% by weight mixture of a 1:1 Irgacure 819 and Irgacure 184 and 5% of the crosslinker 1,3-bis(3-methacryloxypropyl)-tetramethyl disiloxane may be added. The viscosity of this mixture is less than 30 cps measured at about 25° C.
- The material may also be the material as described in BAILEY ET AL., Step and Flash Imprint Lithography: Template Surface Treatment and Defect Analysis, Journal of Vacuum Science, B 18(6), pp. 3572-3577 Nov. 1, 2000, which is incorporated by reference herein.
- The present invention provides a means of preventing material from flowing out of the active area and the features when imprinting. The capillary force exerted on the monomer when it is laminated between the template and wafer is not present in an open film on the template. Hence, the monomer is retained, where it was deposited, within the active area of the template. By partially curing, further flow of the monomer is greatly restricted. The fill time may be reduced to the amount of time required to dispense the monomer and partially cure. The only time-limiting step in imprinting would then be the duration of time required to form a uniform residual layer free of trapped air. Furthermore, previous experiments have shown that rapid, uniform imprints may be created by featureless blank mesa templates and thin fluid residual layers. The process proposed above may transform any template, regardless of features density and size, into a featureless template.
- Embodiments of the present invention described above are exemplary. Many changes and modifications may be made to the disclosure recited above, while remaining within the scope of the invention. Therefore, the scope of the invention should not be limited by the above description, but instead should be determined with reference to the appended claims along with their full scope of equivalents.
Claims (19)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/694,193 US20070228608A1 (en) | 2006-04-03 | 2007-03-30 | Preserving Filled Features when Vacuum Wiping |
US12/488,642 US8021594B2 (en) | 2005-05-11 | 2009-06-22 | Preserving filled features when vacuum wiping |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78877806P | 2006-04-03 | 2006-04-03 | |
US11/694,193 US20070228608A1 (en) | 2006-04-03 | 2007-03-30 | Preserving Filled Features when Vacuum Wiping |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/127,041 Continuation-In-Part US7727453B2 (en) | 2002-07-11 | 2005-05-11 | Step and repeat imprint lithography processes |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/488,642 Continuation US8021594B2 (en) | 2005-05-11 | 2009-06-22 | Preserving filled features when vacuum wiping |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070228608A1 true US20070228608A1 (en) | 2007-10-04 |
Family
ID=39402150
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/694,193 Abandoned US20070228608A1 (en) | 2005-05-11 | 2007-03-30 | Preserving Filled Features when Vacuum Wiping |
US12/488,642 Expired - Fee Related US8021594B2 (en) | 2005-05-11 | 2009-06-22 | Preserving filled features when vacuum wiping |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/488,642 Expired - Fee Related US8021594B2 (en) | 2005-05-11 | 2009-06-22 | Preserving filled features when vacuum wiping |
Country Status (3)
Country | Link |
---|---|
US (2) | US20070228608A1 (en) |
TW (1) | TW200745744A (en) |
WO (1) | WO2008060322A2 (en) |
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Also Published As
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US8021594B2 (en) | 2011-09-20 |
WO2008060322A2 (en) | 2008-05-22 |
US20090256289A1 (en) | 2009-10-15 |
TW200745744A (en) | 2007-12-16 |
WO2008060322A3 (en) | 2008-11-13 |
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