US20070228533A1 - Folding chip planar stack package - Google Patents

Folding chip planar stack package Download PDF

Info

Publication number
US20070228533A1
US20070228533A1 US11/485,107 US48510706A US2007228533A1 US 20070228533 A1 US20070228533 A1 US 20070228533A1 US 48510706 A US48510706 A US 48510706A US 2007228533 A1 US2007228533 A1 US 2007228533A1
Authority
US
United States
Prior art keywords
substrate
semiconductor chips
folding
stack package
planar stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US11/485,107
Other versions
US7397115B2 (en
Inventor
Ik Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Assigned to HYNIX SEMICONDUCTOR INC. reassignment HYNIX SEMICONDUCTOR INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LEE, IK JAE
Publication of US20070228533A1 publication Critical patent/US20070228533A1/en
Application granted granted Critical
Publication of US7397115B2 publication Critical patent/US7397115B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/02Details
    • H02H3/04Details with warning or supervision in addition to disconnection, e.g. for indicating that protective apparatus has functioned
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H71/00Details of the protective switches or relays covered by groups H01H73/00 - H01H83/00
    • H01H71/10Operating or release mechanisms
    • H01H71/12Automatic release mechanisms with or without manual release
    • H01H71/123Automatic release mechanisms with or without manual release using a solid-state trip unit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5387Flexible insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0613Square or rectangular array
    • H01L2224/06134Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/06135Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0613Square or rectangular array
    • H01L2224/06134Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/06136Covering only the central area of the surface to be connected, i.e. central arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201Structure
    • H01L2224/32012Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06579TAB carriers; beam leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • the present invention relates to a stack package. More particularly, the present invention relates to a folding chip planar stack package obtained by folding semiconductor chips.
  • a representative example of the semiconductor package is a so-called BGA (ball grid array) package.
  • BGA ball grid array
  • a BGA package has a size similar to that of a semiconductor chip, so that the mounting space for the BGA package can be minimized.
  • the BGA package is electrically connected to external circuits through one or more solder balls on the BGA package, the transmission path between the BGA package solder ball and a semiconductor chip inside the package is kept as short as possible, so that the electrical characteristics of the BGA package can be improved.
  • FIG. 1 shows a representation of the structure of a typical FBGA package.
  • a conventional BOC (Board On Chip) type FBGA package includes a center pad type semiconductor chip 11 bonded to a substrate 15 having a window by means of an adhesive 13 and provided at a lower portion thereof with a bonding pad 12 .
  • the bonding pad 12 of the semiconductor chip 11 which is exposed through the window of the substrate 15 , is connected to a bond finger (not shown) of the substrate 15 through a bonding wire 16 .
  • An upper surface of the substrate 15 including the semiconductor chip 11 and the window part of the substrate 15 including the bonding wire 16 are sealed by means of a sealing material 17 , such as EMC (epoxy molding compound).
  • solder balls 18 which are used for mounting the FBGA package on an external circuit, are attached to a ball land (not shown) formed at a lower surface of the substrate 15 .
  • the window must be formed at the center portion of the substrate so as to wire-bond the bonding pad of the semiconductor chip to the bond finger of the substrate, so that the manufacturing cost for the substrate may increase as compared with that of the substrate, which does not require the window, thereby increasing the manufacturing cost for the BOC type FBGA package.
  • the window since only one semiconductor chip is accommodated in the BOC type FBGA package, it is difficult to increase the capacity of the BOC type FBGA package.
  • the chip stack package has a structure similar to that of the above BOC type FBGA package, except that it can theoretically accommodate two semiconductor chips therein but as a practical matter, such a chip stack package requires a bonding wire 26 b having a very long length in order to electrically connect an upper semiconductor chip 24 with a substrate 25 .
  • the bonding wire 26 b is long and can be easily broken during a packaging molding process.
  • reference numerals 23 , 27 and 28 represent an adhesive, a sealing material and solder balls, respectively.
  • FIG. 3 is a sectional view illustrating a conventional planar stack package.
  • the conventional planar stack package includes semiconductor chips 31 and 34 aligned on a substrate 35 in parallel to each other while being sealed by means of a sealing material.
  • Such a planar stack package can be easily fabricated and can improve the signal transmission characteristics because the transmission path for the electric signal between the semiconductor chips 31 and 34 and the substrate 35 can be uniformly established.
  • bonding wires 36 a and 36 b have relatively short lengths, the bonding wires 36 a and 36 b can be prevented from being broken during the molding process.
  • planar stack package is suitable for edge pad type chips, it is not suitable for center pad type chips.
  • the size of the semiconductor chip is enlarged, it is difficult to fabricate the planar stack package. That is, if the size of the semiconductor chip is enlarged, the planar stack package must be fabricated while increasing the size of the substrate corresponding to the size of the semiconductor chip.
  • the mounting space for the planar stack package may be increased, so that the planar stack package has no practical use.
  • the limitation of the mounting space for the planar stack package it may happen that fabrication of the planar stack package is impossible.
  • an object of the present invention is to provide a folding chip planar stack package including a substrate, which has no window, thereby reducing the manufacturing cost thereof.
  • Another object of the present invention is to provide a folding chip planar stack package having a planar stack structure capable of ensuring superior signal transmission characteristics.
  • Still another object of the present invention is to provide a folding chip planar stack package having a planar stack structure realized by employing folding chips such that the size of the folding chip planar stack package can be reduced.
  • Still yet another object of the present invention is to provide a folding chip planar stack package having a planar stack structure, capable of minimizing the mounting space for the folding chip planar stack package.
  • a folding chip planar stack package comprising: a substrate; first and second semiconductor chips attached to an upper surface of the substrate while being folded and spaced in parallel to each other; a bonding wire for electrically connecting the first and second semiconductor chips with the substrate; a sealing material for sealing the upper surface of the substrate including the first and second semiconductor chips and the bonding wire; and solder balls attached to a lower surface of the substrate.
  • the substrate is provided at a center portion of the upper surface thereof with a bond finger for electrically connecting the substrate with the first and second semiconductor chips.
  • the first and second semiconductor chips include center pad type chips, which are aligned in parallel on the upper surface of the substrate about a bond finger such that folding surfaces of the first and second chips thereof face each other and in which the bonding pads are attached to the folding surfaces.
  • the bonding pads aligned at the folding surfaces of the first and second semiconductor chips are electrically connected to the bond finger of the substrate through bonding wires.
  • bond fingers are provided at outsides of the first and second semiconductor chips attached to the upper surface of the substrate so as to electrically connect the first and second semiconductor chips with the substrate, respectively.
  • the first and second semiconductor chips include edge pad type chips, which are aligned on the upper surface of the substrate parallel to each other (also referred to herein as “parallelly”) such that folding surfaces thereof face each other and in which the bonding pads are aligned adjacent to the bond fingers of the substrate.
  • the bonding pads of the first and second semiconductor chips, which are adjacent to the bond fingers of the substrate are electrically connected with the bond fingers of the substrate through bonding wires.
  • the bond fingers are provided at a center portion of the upper surface of the substrate and outsides of the first and second semiconductor chips so as to electrically connect the first and second semiconductor chips with the substrate, respectively.
  • the first and second semiconductor chips are parallelly attached to the substrate at outsides of the bond fingers such that folding surfaces of the first and second semiconductor chips face each other, and bonding pads are aligned at a peripheral surface and folding surfaces of the first and second semiconductor chips adjacent to the bond fingers of the substrate, respectively.
  • the bonding pads of the first and second semiconductor chips which are aligned at the peripheral surface and folding surfaces of the first and second semiconductor chips, are electrically connected with adjacent bond fingers of the substrate through bonding wires.
  • first and second tapes are sequentially stacked on the first and second semiconductor chips, respectively, and the first and second semiconductor chips are folded together with the first and second tapes, respectively.
  • FIG. 1 is a sectional view illustrating a convention BOC (board on chip) type FBGA (fine pitch ball grid array) package;
  • FIG. 2 is a sectional view illustrating a conventional chip stack package
  • FIG. 3 is a sectional view illustrating a conventional planar stack package
  • FIG. 4 is a sectional view illustrating a folding chip planar stack package according to one embodiment of the present invention.
  • FIGS. 5 a to 5 d are sectional views illustrating the procedure for manufacturing a folding chip planar stack package according to one embodiment of the present invention.
  • FIG. 6 to 8 are sectional views illustrating folding chip planar stack packages according to another embodiment of the present invention.
  • FIG. 4 there is shown a sectional view of a folding chip planar stack package according to one embodiment of the present invention.
  • the folding chip planar stack package includes a substrate 45 , first and second semiconductor chips 42 and 44 attached to an upper surface of the substrate 45 while being spaced in parallel to each other, a plurality of bonding wires 48 for electrically connecting the first and second semiconductor chips 42 and 44 with the electrical contacts on or in the substrate 45 , a sealing material 49 for sealing the upper surface of the substrate 45 including the first and second semiconductor chips 42 and 44 and the bonding wire 48 , and solder balls 50 , which are attached to a lower surface of the substrate 45 so as to mount the folding chip planar stack package on an external circuit (not shown).
  • the substrate 45 has a circuit pattern (not shown).
  • the substrate 45 is formed at the center of the upper surface thereof with an electric terminal, that is, a bond finger 46 such that the substrate 45 can be electrically connected to the first and second semiconductor chips 42 and 44 .
  • Ball lands 47 are formed at a lower surface of the substrate 45 and solder balls 50 are attached to the ball lands 47 as shown in the figure.
  • First and second tapes 52 and 54 are sequentially stacked on each of the first and second semiconductor chips 42 and 44 , respectively.
  • the first and second semiconductor chips 42 and 44 are folded together with the first and second tapes 52 and 54 , respectively.
  • the first and second semiconductor chips 42 and 44 are attached to the upper surface of the substrate 45 by means of an adhesive 43 while being parallelly spaced apart from the bond finger 46 in left and right directions respectively, as shown in the figure, in such a manner that the folding surface of the first semiconductor chip 42 faces the folding surface of the second semiconductor chip 44 .
  • the first and second semiconductor chips 42 and 44 are center pad type chips, in which bonding pads (not shown) are provided on the folding surfaces thereof.
  • the bonding pads provided on the folding surfaces of the first and second semiconductor chips 42 and 44 are electrically connected to the bond finger 46 of the substrate 45 through bonding wires 48 .
  • the bonding wire 48 connecting the first semiconductor chip 42 with the substrate 45 has the length identical to that of the bonding wire 48 connecting the second semiconductor chip 44 with the substrate, so that the bonding wires 48 have the same transmission path for the electric signal, improving the signal transmission characteristics.
  • the sealing material 49 is provided in order to protect bonding pad regions of the first and second semiconductor chips 42 and 44 and the bonding wires 48 from external impact.
  • the solder balls 50 are attached to the ball lands 47 formed at the lower surface of the substrate 45 and enable the package to be attached to a circuit board or other substrate (not shown).
  • the folding chip planar stack package according to the present invention has a face-up type two-layer substrate structure, so that the degree of freedom for the trace routing is increased.
  • the trace length as well as the number of the bonding wire can be reduced, so that the electrical characteristics of the folding chip planar stack package can be improved. Accordingly, the folding chip planar stack package can be applied to the high-speed product.
  • the folding chip planar stack package according to the present invention is obtained by folding the semiconductor chips, the region occupied by the semiconductor chips can be reduced. Therefore, the size of the substrate can be reduced, so that the size of the folding chip planar stack package can also be reduced, thereby minimizing the mounting space required for the folding chip planar stack package.
  • a sawing process is performed with respect to the wafer 51 , thereby dividing the wafer 51 into several individual chips 53 , each of which has a correspondingly sawn portion of first tape 52 attached to its rear surface.
  • the second tape 54 is attached to a half portion of a rear surface of the chip 53 .
  • the chip 53 is folded such that the first tape 52 remaining at the other half portion of the rear surface of the chip 53 , to which the second tape 54 is not attached, can be bonded to the second tape 54 , thereby preparing a folding chip 55 according to the present invention.
  • the second tape 54 is used for reducing the stress applied to the chip 53 when the chip 53 is folded. Accordingly, the chip 53 can be folded without attaching the second tape 52 to the chip 53 .
  • the bonding pad is provided at the folding surface of the folding chip 55 .
  • folding chips 55 (hereinafter, referred to as first and second semiconductor chips 42 and 44 ) are bonded to the upper surface of the substrate 45 , which is formed at the center portion of the upper surface thereof with the bond finger 46 and at the lower surface thereof with the ball lands 47 , by means of an adhesive 53 in such a manner that the first and second semiconductor chips 42 and 44 are spaced in parallel to each other. At this time, the first and second semiconductor chips 42 and 44 are aligned at left and right sides of the substrate 45 about the bond finger 46 .
  • a wire bonding process is performed with respect to the resultant structure, thereby connecting the bonding pads aligned at the folding surfaces of the first and second semiconductor chips 42 and 44 with the bond finger 46 of the substrate 45 by using the bonding wires 48 .
  • the wire bonding is vertically performed.
  • the upper surface of the substrate 45 including the first and second semiconductor chips 42 and 44 and the bonding wires 48 is sealed by means of the sealing material 49 including EMC in order to protect the first and second semiconductor chips 42 and 44 and the bonding wires 48 from external impact.
  • the solder balls 50 which are used for mounting the folding chip planar stack package on the external circuit, are attached to the ball lands 47 formed at the lower surface of the substrate 45 , thereby obtaining the folding chip planar stack package according to the present invention.
  • edge pad type chips can be used, instead of the center pad type chips.
  • FIG. 6 is sectional view illustrating the folding chip planar stack package according to another embodiment of the present invention.
  • first and second semiconductor chips 42 a and 44 a are in the form of edge pad type chips.
  • bond fingers 46 a of the substrate 45 are aligned at the outside of the first and second semiconductor chips 42 a and 44 a , respectively.
  • the bonding wires 48 are also aligned at the outside of the first and second semiconductor chips 42 a and 44 a , rather than the center portion of the upper surface of the substrate 45 .
  • the structure and alignment of remaining components are identical to those of the previously described embodiment.
  • FIG. 7 is sectional view illustrating the folding chip planar stack package according to still another embodiment of the present invention.
  • first and second semiconductor chips 42 b and 44 b have dual alignment structures, in which bonding pads are aligned at both the center and edge portions of the first and second semiconductor chips 42 b and 44 b .
  • bond fingers 46 and 46 a of the substrate 45 are aligned at the center portion and the outside of the first and second semiconductor chips 42 b and 44 b corresponding to the bonding pads, respectively.
  • the bonding wires 48 are aligned such that they can connect the bonding pads of the first and second semiconductor chips 42 b and 44 b with the bond fingers 46 and 46 a of the substrate 45 at the center portion of the substrate 45 and the outside of the first and second semiconductor chips 42 b and 44 b , respectively.
  • FIG. 8 is sectional view illustrating the folding chip planar stack package according to still yet another embodiment of the present invention.
  • the folding chip planar stack package according to still yet another embodiment of the present invention is different from the folding chip planar stack packages of the previous embodiments in that a lead frame 80 is employed instead of the substrate and semiconductor chips 60 are attached to upper and lower surfaces of an inner lead 82 of the lead frame 80 , respectively.
  • bonding pads (not shown) aligned at folding surfaces of the semiconductor chips 60 are connected to adjacent inner leads through boding wires 86 , respectively.
  • the lead frame 80 is sealed by means of a sealing member 90 , except for an outer lead 84 of the lead frame 80 .
  • the folding chip planar stack package employing the lead frame has the advantageous identical to those of the previous embodiments.
  • the folding chip planar stack package according to the present invention is obtained by using a planar stack so that the folding chip planar stack package can be easily fabricated.
  • the folding chip planar stack package according to the present invention is suitable for both the center pad type chips and the edge pad type chips.
  • the present invention is not necessary to form a window in the substrate, so that the manufacturing cost for the folding chip planar stack package can be reduced.
  • the present invention can improve the degree of freedom when designing the substrate, so that he folding chip planar stack package can be applied to the high-speed product. Since the folding chip planar stack package according to the present invention is fabricated by folding the semiconductor chips, the region occupied by the semiconductor chips can be reduced, so that the size of the substrate and the semiconductor package can be reduced. Thus, the mounting surface for the semiconductor package can be minimized.

Abstract

A folding chip planar stack package is realized by employing folding chips. The folding chip planar stack package includes a substrate, first and second semiconductor chips attached to an upper surface of the substrate while being folded and spaced in parallel to each other, a bonding wire for electrically connecting the first and second semiconductor chips with the substrate, a sealing material for sealing the upper surface of the substrate including the first and second semiconductor chips and the bonding wire, and solder balls attached to a lower surface of the substrate.

Description

    FIELD OF THE INVENTION
  • The present invention relates to a stack package. More particularly, the present invention relates to a folding chip planar stack package obtained by folding semiconductor chips.
  • BACKGROUND OF THE INVENTION
  • As generally known in the art, semiconductor packages have been developed to have a compact size while improving various electrical characteristics thereof. A representative example of the semiconductor package is a so-called BGA (ball grid array) package. As is known to those of ordinary skill in the art, a BGA package has a size similar to that of a semiconductor chip, so that the mounting space for the BGA package can be minimized. In addition, since the BGA package is electrically connected to external circuits through one or more solder balls on the BGA package, the transmission path between the BGA package solder ball and a semiconductor chip inside the package is kept as short as possible, so that the electrical characteristics of the BGA package can be improved.
  • Recently, an FBGA (fine-pitch BGA) package has been suggested. The FBGA package not only has the advantages of the BGA package, but also realizes a fine pitch or close spacing of solder balls used for a signal/power input/output pins and is suitable for highly integrated semiconductor devices. FIG. 1 shows a representation of the structure of a typical FBGA package.
  • As shown in FIG. 1, a conventional BOC (Board On Chip) type FBGA package includes a center pad type semiconductor chip 11 bonded to a substrate 15 having a window by means of an adhesive 13 and provided at a lower portion thereof with a bonding pad 12. In addition, the bonding pad 12 of the semiconductor chip 11, which is exposed through the window of the substrate 15, is connected to a bond finger (not shown) of the substrate 15 through a bonding wire 16. An upper surface of the substrate 15 including the semiconductor chip 11 and the window part of the substrate 15 including the bonding wire 16 are sealed by means of a sealing material 17, such as EMC (epoxy molding compound). In addition, solder balls 18, which are used for mounting the FBGA package on an external circuit, are attached to a ball land (not shown) formed at a lower surface of the substrate 15.
  • However, according to the above BOC type FBGA package, the window must be formed at the center portion of the substrate so as to wire-bond the bonding pad of the semiconductor chip to the bond finger of the substrate, so that the manufacturing cost for the substrate may increase as compared with that of the substrate, which does not require the window, thereby increasing the manufacturing cost for the BOC type FBGA package. In addition, since only one semiconductor chip is accommodated in the BOC type FBGA package, it is difficult to increase the capacity of the BOC type FBGA package.
  • In order to increase the capacity of the semiconductor package, as shown in FIG. 2, a chip stack package has been suggested. The chip stack package has a structure similar to that of the above BOC type FBGA package, except that it can theoretically accommodate two semiconductor chips therein but as a practical matter, such a chip stack package requires a bonding wire 26 b having a very long length in order to electrically connect an upper semiconductor chip 24 with a substrate 25. As can be seen in FIG. 2, the bonding wire 26b is long and can be easily broken during a packaging molding process. In particular, since transmission paths of electric signals between a lower semiconductor chip 21 and the upper semiconductor chip 24, are different from each other, that is, the lengths of bonding wires 26 a and 26 b are different from each other, the signal transmission characteristics, such as propagation delays will be different and the operation of the semiconductor chips can be degraded. In addition, if bonding pads are aligned in a dual array structure, it is difficult to variously design the substrate relative to the stack, making it difficult to apply the semiconductor package to a high-speed product.
  • In FIG. 2, reference numerals 23, 27 and 28 represent an adhesive, a sealing material and solder balls, respectively.
  • FIG. 3 is a sectional view illustrating a conventional planar stack package. As shown in FIG. 3, the conventional planar stack package includes semiconductor chips 31 and 34 aligned on a substrate 35 in parallel to each other while being sealed by means of a sealing material. Such a planar stack package can be easily fabricated and can improve the signal transmission characteristics because the transmission path for the electric signal between the semiconductor chips 31 and 34 and the substrate 35 can be uniformly established. In addition, since bonding wires 36 a and 36 b have relatively short lengths, the bonding wires 36 a and 36 b can be prevented from being broken during the molding process.
  • However, although the above planar stack package is suitable for edge pad type chips, it is not suitable for center pad type chips. In addition, if the size of the semiconductor chip is enlarged, it is difficult to fabricate the planar stack package. That is, if the size of the semiconductor chip is enlarged, the planar stack package must be fabricated while increasing the size of the substrate corresponding to the size of the semiconductor chip. However, in this case, the mounting space for the planar stack package may be increased, so that the planar stack package has no practical use. In addition, due to the limitation of the mounting space for the planar stack package, it may happen that fabrication of the planar stack package is impossible.
  • SUMMARY OF THE INVENTION
  • Accordingly, an object of the present invention is to provide a folding chip planar stack package including a substrate, which has no window, thereby reducing the manufacturing cost thereof.
  • Another object of the present invention is to provide a folding chip planar stack package having a planar stack structure capable of ensuring superior signal transmission characteristics.
  • Still another object of the present invention is to provide a folding chip planar stack package having a planar stack structure realized by employing folding chips such that the size of the folding chip planar stack package can be reduced.
  • Still yet another object of the present invention is to provide a folding chip planar stack package having a planar stack structure, capable of minimizing the mounting space for the folding chip planar stack package.
  • In order to accomplish these and other objects, there is provided a folding chip planar stack package comprising: a substrate; first and second semiconductor chips attached to an upper surface of the substrate while being folded and spaced in parallel to each other; a bonding wire for electrically connecting the first and second semiconductor chips with the substrate; a sealing material for sealing the upper surface of the substrate including the first and second semiconductor chips and the bonding wire; and solder balls attached to a lower surface of the substrate.
  • According to the preferred embodiment of the present invention, the substrate is provided at a center portion of the upper surface thereof with a bond finger for electrically connecting the substrate with the first and second semiconductor chips. The first and second semiconductor chips include center pad type chips, which are aligned in parallel on the upper surface of the substrate about a bond finger such that folding surfaces of the first and second chips thereof face each other and in which the bonding pads are attached to the folding surfaces. The bonding pads aligned at the folding surfaces of the first and second semiconductor chips are electrically connected to the bond finger of the substrate through bonding wires.
  • In addition, bond fingers are provided at outsides of the first and second semiconductor chips attached to the upper surface of the substrate so as to electrically connect the first and second semiconductor chips with the substrate, respectively. Preferably, the first and second semiconductor chips include edge pad type chips, which are aligned on the upper surface of the substrate parallel to each other (also referred to herein as “parallelly”) such that folding surfaces thereof face each other and in which the bonding pads are aligned adjacent to the bond fingers of the substrate. The bonding pads of the first and second semiconductor chips, which are adjacent to the bond fingers of the substrate, are electrically connected with the bond fingers of the substrate through bonding wires.
  • According to the preferred embodiment of the present invention, the bond fingers are provided at a center portion of the upper surface of the substrate and outsides of the first and second semiconductor chips so as to electrically connect the first and second semiconductor chips with the substrate, respectively. The first and second semiconductor chips are parallelly attached to the substrate at outsides of the bond fingers such that folding surfaces of the first and second semiconductor chips face each other, and bonding pads are aligned at a peripheral surface and folding surfaces of the first and second semiconductor chips adjacent to the bond fingers of the substrate, respectively. The bonding pads of the first and second semiconductor chips, which are aligned at the peripheral surface and folding surfaces of the first and second semiconductor chips, are electrically connected with adjacent bond fingers of the substrate through bonding wires.
  • In addition, first and second tapes are sequentially stacked on the first and second semiconductor chips, respectively, and the first and second semiconductor chips are folded together with the first and second tapes, respectively.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which:
  • FIG. 1 is a sectional view illustrating a convention BOC (board on chip) type FBGA (fine pitch ball grid array) package;
  • FIG. 2 is a sectional view illustrating a conventional chip stack package;
  • FIG. 3 is a sectional view illustrating a conventional planar stack package;
  • FIG. 4 is a sectional view illustrating a folding chip planar stack package according to one embodiment of the present invention;
  • FIGS. 5 a to 5 d are sectional views illustrating the procedure for manufacturing a folding chip planar stack package according to one embodiment of the present invention; and
  • FIG. 6 to 8 are sectional views illustrating folding chip planar stack packages according to another embodiment of the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Hereinafter, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. In the following description and drawings, the same reference numerals are used to designate the same or similar components, so repetition of the description on the same or similar components will be omitted.
  • Referring now to FIG. 4 there is shown a sectional view of a folding chip planar stack package according to one embodiment of the present invention.
  • As shown in FIG. 4, the folding chip planar stack package includes a substrate 45, first and second semiconductor chips 42 and 44 attached to an upper surface of the substrate 45 while being spaced in parallel to each other, a plurality of bonding wires 48 for electrically connecting the first and second semiconductor chips 42 and 44 with the electrical contacts on or in the substrate 45, a sealing material 49 for sealing the upper surface of the substrate 45 including the first and second semiconductor chips 42 and 44 and the bonding wire 48, and solder balls 50, which are attached to a lower surface of the substrate 45 so as to mount the folding chip planar stack package on an external circuit (not shown).
  • Herein, the substrate 45 has a circuit pattern (not shown). In addition, the substrate 45 is formed at the center of the upper surface thereof with an electric terminal, that is, a bond finger 46 such that the substrate 45 can be electrically connected to the first and second semiconductor chips 42 and 44. Ball lands 47 are formed at a lower surface of the substrate 45 and solder balls 50 are attached to the ball lands 47 as shown in the figure.
  • First and second tapes 52 and 54 are sequentially stacked on each of the first and second semiconductor chips 42 and 44, respectively. In this way, the first and second semiconductor chips 42 and 44 are folded together with the first and second tapes 52 and 54, respectively. The first and second semiconductor chips 42 and 44 are attached to the upper surface of the substrate 45 by means of an adhesive 43 while being parallelly spaced apart from the bond finger 46 in left and right directions respectively, as shown in the figure, in such a manner that the folding surface of the first semiconductor chip 42 faces the folding surface of the second semiconductor chip 44. In particular, the first and second semiconductor chips 42 and 44 are center pad type chips, in which bonding pads (not shown) are provided on the folding surfaces thereof. In addition, the bonding pads provided on the folding surfaces of the first and second semiconductor chips 42 and 44 are electrically connected to the bond finger 46 of the substrate 45 through bonding wires 48. At this time, the bonding wire 48 connecting the first semiconductor chip 42 with the substrate 45 has the length identical to that of the bonding wire 48 connecting the second semiconductor chip 44 with the substrate, so that the bonding wires 48 have the same transmission path for the electric signal, improving the signal transmission characteristics.
  • The sealing material 49 is provided in order to protect bonding pad regions of the first and second semiconductor chips 42 and 44 and the bonding wires 48 from external impact. The solder balls 50 are attached to the ball lands 47 formed at the lower surface of the substrate 45 and enable the package to be attached to a circuit board or other substrate (not shown).
  • As mentioned above, the folding chip planar stack package according to the present invention has a face-up type two-layer substrate structure, so that the degree of freedom for the trace routing is increased. Thus, the trace length as well as the number of the bonding wire can be reduced, so that the electrical characteristics of the folding chip planar stack package can be improved. Accordingly, the folding chip planar stack package can be applied to the high-speed product.
  • Furthermore, since the folding chip planar stack package according to the present invention is obtained by folding the semiconductor chips, the region occupied by the semiconductor chips can be reduced. Therefore, the size of the substrate can be reduced, so that the size of the folding chip planar stack package can also be reduced, thereby minimizing the mounting space required for the folding chip planar stack package.
  • Hereinafter, the procedure for manufacturing the folding chip planar stack package according to one embodiment of the present invention will be described with reference to FIGS. 5 a to 5 e.
  • Referring to FIG. 5 a, in a state in which the first tape 52 is attached to a rear surface of a wafer 51, a sawing process is performed with respect to the wafer 51, thereby dividing the wafer 51 into several individual chips 53, each of which has a correspondingly sawn portion of first tape 52 attached to its rear surface. After sawing, the second tape 54 is attached to a half portion of a rear surface of the chip 53.
  • In this state, the chip 53 is folded such that the first tape 52 remaining at the other half portion of the rear surface of the chip 53, to which the second tape 54 is not attached, can be bonded to the second tape 54, thereby preparing a folding chip 55 according to the present invention.
  • Herein, the second tape 54 is used for reducing the stress applied to the chip 53 when the chip 53 is folded. Accordingly, the chip 53 can be folded without attaching the second tape 52 to the chip 53. At this time, although it is not illustrated, the bonding pad is provided at the folding surface of the folding chip 55.
  • Referring to FIG. 5 b, folding chips 55 (hereinafter, referred to as first and second semiconductor chips 42 and 44) are bonded to the upper surface of the substrate 45, which is formed at the center portion of the upper surface thereof with the bond finger 46 and at the lower surface thereof with the ball lands 47, by means of an adhesive 53 in such a manner that the first and second semiconductor chips 42 and 44 are spaced in parallel to each other. At this time, the first and second semiconductor chips 42 and 44 are aligned at left and right sides of the substrate 45 about the bond finger 46.
  • Referring to FIG. 5 c, a wire bonding process is performed with respect to the resultant structure, thereby connecting the bonding pads aligned at the folding surfaces of the first and second semiconductor chips 42 and 44 with the bond finger 46 of the substrate 45 by using the bonding wires 48. Preferably, the wire bonding is vertically performed.
  • Referring to FIG. 5 d, the upper surface of the substrate 45 including the first and second semiconductor chips 42 and 44 and the bonding wires 48 is sealed by means of the sealing material 49 including EMC in order to protect the first and second semiconductor chips 42 and 44 and the bonding wires 48 from external impact. After that, the solder balls 50, which are used for mounting the folding chip planar stack package on the external circuit, are attached to the ball lands 47 formed at the lower surface of the substrate 45, thereby obtaining the folding chip planar stack package according to the present invention.
  • Meanwhile, although the above embodiment has been described that the center pad type chips and the bond finger are aligned on the center portion of the substrate, according to another embodiment of the present invention, edge pad type chips can be used, instead of the center pad type chips. In addition, it is also possible to align the bond finger of the substrate at the outside of the semiconductor chips.
  • FIG. 6 is sectional view illustrating the folding chip planar stack package according to another embodiment of the present invention. As shown in FIG. 6, first and second semiconductor chips 42 a and 44 a are in the form of edge pad type chips. In addition, different from the previous embodiment, in which the bond finger is aligned on the center portion of the upper surface of the substrate 45, bond fingers 46 a of the substrate 45 are aligned at the outside of the first and second semiconductor chips 42 a and 44 a, respectively. In addition, the bonding wires 48 are also aligned at the outside of the first and second semiconductor chips 42 a and 44 a, rather than the center portion of the upper surface of the substrate 45. The structure and alignment of remaining components are identical to those of the previously described embodiment.
  • FIG. 7 is sectional view illustrating the folding chip planar stack package according to still another embodiment of the present invention. As shown in FIG. 7, first and second semiconductor chips 42 b and 44 b have dual alignment structures, in which bonding pads are aligned at both the center and edge portions of the first and second semiconductor chips 42 b and 44 b. In this case, bond fingers 46 and 46 a of the substrate 45 are aligned at the center portion and the outside of the first and second semiconductor chips 42 b and 44 b corresponding to the bonding pads, respectively. In addition, the bonding wires 48 are aligned such that they can connect the bonding pads of the first and second semiconductor chips 42 b and 44 b with the bond fingers 46 and 46 a of the substrate 45 at the center portion of the substrate 45 and the outside of the first and second semiconductor chips 42 b and 44 b, respectively.
  • FIG. 8 is sectional view illustrating the folding chip planar stack package according to still yet another embodiment of the present invention. As shown in FIG. 8, the folding chip planar stack package according to still yet another embodiment of the present invention is different from the folding chip planar stack packages of the previous embodiments in that a lead frame 80 is employed instead of the substrate and semiconductor chips 60 are attached to upper and lower surfaces of an inner lead 82 of the lead frame 80, respectively. In addition, bonding pads (not shown) aligned at folding surfaces of the semiconductor chips 60 are connected to adjacent inner leads through boding wires 86, respectively. Furthermore, the lead frame 80 is sealed by means of a sealing member 90, except for an outer lead 84 of the lead frame 80.
  • The folding chip planar stack package employing the lead frame has the advantageous identical to those of the previous embodiments.
  • As described above, the folding chip planar stack package according to the present invention is obtained by using a planar stack so that the folding chip planar stack package can be easily fabricated. In addition, the folding chip planar stack package according to the present invention is suitable for both the center pad type chips and the edge pad type chips. The present invention is not necessary to form a window in the substrate, so that the manufacturing cost for the folding chip planar stack package can be reduced. In addition, the present invention can improve the degree of freedom when designing the substrate, so that he folding chip planar stack package can be applied to the high-speed product. Since the folding chip planar stack package according to the present invention is fabricated by folding the semiconductor chips, the region occupied by the semiconductor chips can be reduced, so that the size of the substrate and the semiconductor package can be reduced. Thus, the mounting surface for the semiconductor package can be minimized.
  • Although a preferred embodiment of the present invention has been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Claims (11)

1. A folding chip planar stack package comprising:
a substrate;
first and second semiconductor chips attached to an upper surface of the substrate while being folded and spaced in parallel to each other;
a bonding wire electrically connecting the first and second semiconductor chips with the substrate;
a sealing material sealing the upper surface of the substrate including the first and second semiconductor chips and the bonding wire; and
solder balls attached to a lower surface of the substrate.
2. The folding chip planar stack package as claimed in claim 1, wherein the substrate is provided at a center portion of the upper surface thereof with a bond finger for electrically connecting the substrate with the first and second semiconductor chips.
3. The folding chip planar stack package as claimed in claim 2, wherein the first and second semiconductor chips include center pad type chips, which are parallelly aligned on the upper surface of the substrate about a bond finger such that folding surfaces thereof face each other and in which the bonding pads are attached to the folding surfaces.
4. The folding chip planar stack package as claimed in claim 3, wherein the bonding pads aligned at the folding surfaces of the first and second semiconductor chips are electrically connected to the bond finger of the substrate through bonding wires.
5. The folding chip planar stack package as claimed in claim 1, wherein bond fingers are provided at outsides of the first and second semiconductor chips attached to the upper surface of the substrate so as to electrically connect the first and second semiconductor chips with the substrate, respectively.
6. The folding chip planar stack package as claimed in claim 5, wherein the first and second semiconductor chips include edge pad type chips, which are parallelly aligned on the upper surface of the substrate such that folding surfaces thereof face each other and in which the bonding pads are aligned adjacent to the bond fingers of the substrate.
7. The folding chip planar stack package as claimed in claim 6, wherein bonding pads of the first and second semiconductor chips, which are adjacent to the bond fingers of the substrate, are electrically connected with the bond fingers of the substrate through bonding wires.
8. The folding chip planar stack package as claimed in claim 1, wherein bond fingers are provided at a center portion of the upper surface of the substrate and outsides of the first and second semiconductor chips so as to electrically connect the first and second semiconductor chips with the substrate, respectively.
9. The folding chip planar stack package as claimed in claim 8, wherein the first and second semiconductor chips are parallelly attached to the substrate at outsides of the bond fingers such that folding surfaces of the first and second semiconductor chips face each other, and bonding pads are aligned at a peripheral surface and folding surfaces of the first and second semiconductor chips adjacent to the bond fingers of the substrate, respectively.
10. The folding chip planar stack package as claimed in claim 9, wherein bonding pads of the first and second semiconductor chips, which are aligned at the peripheral surface and folding surfaces of the first and second semiconductor chips, are electrically connected with adjacent bond fingers of the substrate through bonding wires.
11. The folding chip planar stack package as claimed in claim 1, wherein first and second tapes are sequentially stacked on the first and second semiconductor chips, respectively, and the first and second semiconductor chips are folded together with the first and second tapes, respectively.
US11/485,107 2006-03-29 2006-07-12 Folding chip planar stack package Expired - Fee Related US7397115B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0028523 2006-03-29
KR1020060028523A KR100780691B1 (en) 2006-03-29 2006-03-29 Folding chip planr stack package

Publications (2)

Publication Number Publication Date
US20070228533A1 true US20070228533A1 (en) 2007-10-04
US7397115B2 US7397115B2 (en) 2008-07-08

Family

ID=38557590

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/485,107 Expired - Fee Related US7397115B2 (en) 2006-03-29 2006-07-12 Folding chip planar stack package

Country Status (3)

Country Link
US (1) US7397115B2 (en)
JP (1) JP4889406B2 (en)
KR (1) KR100780691B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111524464A (en) * 2020-06-11 2020-08-11 厦门通富微电子有限公司 Display device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7767543B2 (en) * 2005-09-06 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a micro-electro-mechanical device with a folded substrate
EP2338173A1 (en) * 2008-08-26 2011-06-29 Siemens Medical Instruments Pte. Ltd. Substrate arrangement
KR101061531B1 (en) * 2010-12-17 2011-09-01 테세라 리써치 엘엘씨 Enhanced stacked microelectronic assemblies with central contacts and improved ground or power distribution

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072700A (en) * 1997-06-30 2000-06-06 Hyundai Electronics Industries Co., Ltd. Ball grid array package
US6225688B1 (en) * 1997-12-11 2001-05-01 Tessera, Inc. Stacked microelectronic assembly and method therefor
US20020044423A1 (en) * 1999-05-14 2002-04-18 Primavera Anthony A. Method and apparatus for mounting and packaging electronic components
US20020053732A1 (en) * 1999-05-06 2002-05-09 Hitachi, Ltd. Semiconductor device
US6642627B2 (en) * 2001-07-10 2003-11-04 Samsung Electronics Co., Ltd. Semiconductor chip having bond pads and multi-chip package
US6670217B2 (en) * 2000-12-11 2003-12-30 Medtronic, Inc. Methods for forming a die package
US20040016999A1 (en) * 2002-07-29 2004-01-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US6685577B1 (en) * 1995-12-04 2004-02-03 David M. Scruggs Golf club made of a bulk-solidifying amorphous metal
US20040245617A1 (en) * 2003-05-06 2004-12-09 Tessera, Inc. Dense multichip module
US6879030B2 (en) * 2002-09-30 2005-04-12 Ultratera Corporation Strengthened window-type semiconductor package
US20050095745A1 (en) * 1999-07-16 2005-05-05 Itzhak Sapir High-density packaging of integrated circuits
US7053478B2 (en) * 2001-10-26 2006-05-30 Staktek Group L.P. Pitch change and chip scale stacking system
US7118938B2 (en) * 2002-12-30 2006-10-10 Dongbu Electronics Co., Ltd. Method for packaging a multi-chip module of a semiconductor device
US7132754B1 (en) * 2005-03-17 2006-11-07 Alfred E. Mann Foundation For Scientific Research Flip chip stack
US7180167B2 (en) * 2001-10-26 2007-02-20 Staktek Group L. P. Low profile stacking system and method
US7202555B2 (en) * 2001-10-26 2007-04-10 Staktek Group L.P. Pitch change and chip scale stacking system and method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3638749B2 (en) * 1997-02-28 2005-04-13 新潟精密株式会社 Memory module
JP4321926B2 (en) * 1999-10-19 2009-08-26 富士通株式会社 Semiconductor device, semiconductor integrated device and manufacturing method thereof
JP2001185576A (en) * 1999-12-27 2001-07-06 Hitachi Ltd Semiconductor device
JP2001358287A (en) * 2000-06-14 2001-12-26 Matsushita Electric Ind Co Ltd Semiconductor device
KR100788341B1 (en) * 2001-05-04 2007-12-27 앰코 테크놀로지 코리아 주식회사 Chip Stacked Semiconductor Package
KR100567055B1 (en) * 2001-12-15 2006-04-04 주식회사 하이닉스반도체 method for stacking semiconductor package
JP2003307037A (en) * 2002-04-17 2003-10-31 Ohbayashi Corp Rebuilding method for existing building
JP4299783B2 (en) * 2002-08-09 2009-07-22 富士通マイクロエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6685577B1 (en) * 1995-12-04 2004-02-03 David M. Scruggs Golf club made of a bulk-solidifying amorphous metal
US6699730B2 (en) * 1996-12-13 2004-03-02 Tessers, Inc. Stacked microelectronic assembly and method therefor
US6072700A (en) * 1997-06-30 2000-06-06 Hyundai Electronics Industries Co., Ltd. Ball grid array package
US6225688B1 (en) * 1997-12-11 2001-05-01 Tessera, Inc. Stacked microelectronic assembly and method therefor
US20020053732A1 (en) * 1999-05-06 2002-05-09 Hitachi, Ltd. Semiconductor device
US20020044423A1 (en) * 1999-05-14 2002-04-18 Primavera Anthony A. Method and apparatus for mounting and packaging electronic components
US20050095745A1 (en) * 1999-07-16 2005-05-05 Itzhak Sapir High-density packaging of integrated circuits
US6696318B2 (en) * 2000-12-11 2004-02-24 Medtronic, Inc. Methods for forming a die package
US6670217B2 (en) * 2000-12-11 2003-12-30 Medtronic, Inc. Methods for forming a die package
US6642627B2 (en) * 2001-07-10 2003-11-04 Samsung Electronics Co., Ltd. Semiconductor chip having bond pads and multi-chip package
US7053478B2 (en) * 2001-10-26 2006-05-30 Staktek Group L.P. Pitch change and chip scale stacking system
US7180167B2 (en) * 2001-10-26 2007-02-20 Staktek Group L. P. Low profile stacking system and method
US7202555B2 (en) * 2001-10-26 2007-04-10 Staktek Group L.P. Pitch change and chip scale stacking system and method
US20040016999A1 (en) * 2002-07-29 2004-01-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US6879030B2 (en) * 2002-09-30 2005-04-12 Ultratera Corporation Strengthened window-type semiconductor package
US7118938B2 (en) * 2002-12-30 2006-10-10 Dongbu Electronics Co., Ltd. Method for packaging a multi-chip module of a semiconductor device
US20040245617A1 (en) * 2003-05-06 2004-12-09 Tessera, Inc. Dense multichip module
US7132754B1 (en) * 2005-03-17 2006-11-07 Alfred E. Mann Foundation For Scientific Research Flip chip stack

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111524464A (en) * 2020-06-11 2020-08-11 厦门通富微电子有限公司 Display device

Also Published As

Publication number Publication date
KR100780691B1 (en) 2007-11-30
JP2007266563A (en) 2007-10-11
US7397115B2 (en) 2008-07-08
JP4889406B2 (en) 2012-03-07
KR20070097800A (en) 2007-10-05

Similar Documents

Publication Publication Date Title
KR100621991B1 (en) Chip scale stack package
KR101070913B1 (en) Stacked die package
US7327020B2 (en) Multi-chip package including at least one semiconductor device enclosed therein
KR100477020B1 (en) Multi chip package
US7719094B2 (en) Semiconductor package and manufacturing method thereof
US7199458B2 (en) Stacked offset semiconductor package and method for fabricating
US6724074B2 (en) Stack semiconductor chip package and lead frame
US20040262734A1 (en) Stack type ball grid array package and method for manufacturing the same
US20080197472A1 (en) Semiconductor device and semiconductor module using the same
KR20020062820A (en) Semiconductor device having stacked multi chip module structure
US20060284298A1 (en) Chip stack package having same length bonding leads
US7221041B2 (en) Multi-chips module package and manufacturing method thereof
US6972483B1 (en) Semiconductor package with improved thermal emission property
JP2005209882A (en) Semiconductor package and semiconductor device
US7397115B2 (en) Folding chip planar stack package
KR100574954B1 (en) Integrated circuit chip package using wire bonding from center pads and relocated pads
KR100443516B1 (en) Stack package and manufacturing method thereof
US6984882B2 (en) Semiconductor device with reduced wiring paths between an array of semiconductor chip parts
KR100650769B1 (en) Stack type package
KR20000040586A (en) Multi chip package having printed circuit substrate
KR100400827B1 (en) semiconductor package
KR100567045B1 (en) A package
KR20100096911A (en) Semiconductor package and embedded package using the same and stack package using the same
KR20060007530A (en) Chip stack package
KR20050104205A (en) Chip stack package

Legal Events

Date Code Title Description
AS Assignment

Owner name: HYNIX SEMICONDUCTOR INC., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LEE, IK JAE;REEL/FRAME:018057/0227

Effective date: 20060622

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20160708