US20070215188A1 - Device for cleaning a photomask - Google Patents
Device for cleaning a photomask Download PDFInfo
- Publication number
- US20070215188A1 US20070215188A1 US11/624,266 US62426607A US2007215188A1 US 20070215188 A1 US20070215188 A1 US 20070215188A1 US 62426607 A US62426607 A US 62426607A US 2007215188 A1 US2007215188 A1 US 2007215188A1
- Authority
- US
- United States
- Prior art keywords
- photomask
- cleaning
- conducted
- ions
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Definitions
- the present invention relates to a cleaning device and method. More particularly, the present invention pertains to a device and a method of cleaning a photomask that prevent haze from being generated on a surface of the photomask during a photolithography process.
- wavelengths of exposure sources are becoming shorter and shorter in order to improve the resolution of patterns. Accordingly, a haze, which is not formed in a conventional wavelength band, may occur.
- exposing energy is relatively low, thus a phenomenon in which residual ions, such as SO x , NO x , PO x , F, Cl, NH 4 , Ca, and Mg, on a surface of a photomask cause an optical reaction does not occur.
- a conventional wet cleaning device and method is problematic in that it cannot completely remove such haze.
- an object of the present invention is to provide a device and a method of cleaning a photomask, in which heat treatment is conducted after a cleaning process in order to remove residual ions from the surface of the mask, and consequently, haze is prevented and optical property changes to a phase shift mask are reduced.
- the present invention provides a device for cleaning a photomask.
- the device comprises a first cleaning unit for cleaning the photomask using acids to remove a polymer formed on the photomask, a second cleaning unit for cleaning the photomask using bases, a heat treating unit for heat treating the photomask cleaned using the acids and bases, a cooling unit for cooling the heat treated high temperature photomask, and a robot arm for carrying the photomask.
- the heat treating unit is an electric heating furnace or a convection oven.
- the present invention also provides a method of cleaning a photomask.
- the method comprises (a) conducting a first cleaning process using acids to remove a polymer formed on the photomask, (b) conducting a second cleaning process using heated hydrogen peroxide and ozone water, (c) conducting first heat treatment, (d) conducting a third cleaning process using bases, (e) conducting a fourth cleaning process using the heated hydrogen peroxide and ozone water, and (f) conducting second heat treatment.
- step (c) acidic residual ions and ions that react with ammonia are activated, and the surface of the mask is oxidized in step (c).
- ammonia is removed from the surface of the mask using a chemical reaction during the cleaning process using bases, and oxygen is applied on the surface of the mask in steps (b) and (e).
- ions that react with ammonia are activated, basic residual ions are vaporized, and the surface of the mask is oxidized in step (f).
- the method further comprises conducting a rinsing process using ultrapure water after step (a).
- step (a) is conducted using an aqueous solution including hydrogen peroxide mixed with one of a sulfuric acid, a nitric acid, or a phosphoric acid, and the ozone water.
- steps (b) and (e) are conducted at 40-100° Celsius.
- the heat treatment is conducted in a gas atmosphere which includes one or more selected from the group consisting of N 2 , Ar, O 2 , and He gases.
- step (d) is conducted using an aqueous solution (SC-1) including ammonia water and hydrogen peroxide mixed with each other, and hydrogen water.
- SC-1 aqueous solution
- the heat treatment is conducted at 50-1000° Celsius for 5 min-5 hours.
- the heat treatment is conducted at 50-4000 Celsius.
- the basic residual ions are ammonia (NH 4 ).
- the present invention provides a method of cleaning a photomask.
- the method comprises (a′) conducting a first cleaning process using acids, (b′) conducting first heat treatment to activate acidic residual ions, (c′) conducting a rinsing process using ultrapure water to remove the activated acidic residual ions, and (d′) conducting a second cleaning process using bases.
- the method further comprises step (e′) of conducting second heat treatment in order to vaporize basic residual ions after step (d′).
- the rinsing process is conducted using the ultrapure water after the cleaning process and the heat treatment.
- step (a) is conducted using an aqueous solution including hydrogen peroxide mixed with one of a sulfuric acid, a nitric acid, or a phosphoric acid, and ozone water.
- the heat treatment is conducted in a gas atmosphere which includes one or more selected from a group consisting of N 2 , Ar, O 2 , and He gases.
- the heat treatment is conducted at 50-1000° Celsius for 5 min-5 hours.
- the heat treatment is conducted at 50-400° Celsius.
- the basic residual ions are ammonia (NH 4 ) ions.
- FIG. 1 illustrates a device for cleaning a photomask according to the present invention
- FIG. 2 is a flowchart showing a process of cleaning a photomask according to an embodiment of the present invention.
- FIG. 3 is a flowchart showing a process of cleaning a photomask according to another embodiment of the present invention.
- FIG. 1 illustrates a device for cleaning a photomask according to the present invention.
- the device for cleaning a photomask comprises a first cleaning unit 10 , a second cleaning unit 20 , a robot arm 30 , a heat treating unit 40 , a cooling unit 50 , and a photomask carrier 60 .
- the first cleaning unit 10 cleans the photomask using acids to remove a polymer formed on the photomask.
- the second cleaning unit 20 cleans the photomask using bases.
- the robot arm 30 carries the photomask.
- the heat treating unit 40 heat treats the photomask, which was cleaned using the acids and bases.
- the heat treating unit include an electric heating furnace and a convection oven.
- the cooling unit 50 cools the heat treated high temperature photomask.
- the photomask carrier 60 stores and carries the photomask.
- a method of cleaning a photomask according to an embodiment of the present invention will be described, referring to FIG. 2 .
- FIG. 2 is a flowchart showing a process of cleaning a photomask according to an embodiment of the present invention.
- a polymer formed on the photomask is removed using an aqueous solution, including hydrogen peroxide mixed with an acid, such as a sulfuric acid (H 2 SO 4 ), a nitric acid (HNO 3 ), or a phosphoric acid (H 3 PO 4 ), and ozone water, in order to conduct a first cleaning process 100 .
- an acid such as a sulfuric acid (H 2 SO 4 ), a nitric acid (HNO 3 ), or a phosphoric acid (H 3 PO 4 )
- ozone water ozone water
- ammonia is removed from a surface and an inside of the mask using hydrogen peroxide and ozone water heated at 40-100° Celsius to conduct a second cleaning process 102 .
- Oxygen is then applied to the surface of the mask.
- a second rinsing process 103 is conducted using ultrapure water at 50° Celsius or higher.
- First heat treatment 104 is then conducted in a gas atmosphere which includes one or more selected from N 2 , O 2 , Ar, and He in the electric heating furnace at 50-1000° Celsius for 5 min-5 hours. Due to the first heat treatment, ions that react with ammonia in the second cleaning process 102 and acid-based residual ions, such as SO x , NO x , and PO x , are activated, and the surface of the mask is oxidized. Accordingly, ammonia cannot permeate through the surface of the mask during a cleaning process that uses tertiary bases.
- the residual ions activated by the first heat treatment 104 are removed by a third rinsing process 105 .
- the third rinsing process ultrapure water at 50° Celsius or higher is used.
- a fourth cleaning process 108 is conducted using hydrogen peroxide and ozone water heated at 40-100° Celsius.
- ammonia is removed from the surface and the inside of the mask.
- oxygen is applied on the surface of the mask.
- a fifth rinsing process 109 is conducted using ultrapure water at 50° Celsius or higher.
- second heat treatment 110 is conducted in a gas atmosphere which includes one or more selected from N 2 , Ar, O 2 , and He gases in the electric heating furnace at 50-1000° Celsius for 5 min-5 hours. Due to the second heat treatment, ions which remain on the surface of the photomask and that react with ammonia in the fourth cleaning process 108 are activated. Additionally, ammonia (NH 4 ) as a basic residual ion is vaporized to oxidize the surface of the mask.
- the first and second heat treatments may be conducted in a convection oven, and it is preferable that the heat treating temperature be 50-400° Celsius.
- a method of cleaning a photomask according to another embodiment of the present invention will be described with reference to FIG. 3 .
- FIG. 3 is a flowchart showing a process of cleaning a photomask according to another embodiment of the present invention.
- a polymer formed on the photomask is removed using an aqueous solution including acids, such as hydrogen peroxide mixed with a sulfuric acid (H 2 SO 4 ), a nitric acid (HNO 3 ), or a phosphoric acid (H 3 PO 4 ), and ozone water in order to conduct a first cleaning process (S 1 ).
- acids such as hydrogen peroxide mixed with a sulfuric acid (H 2 SO 4 ), a nitric acid (HNO 3 ), or a phosphoric acid (H 3 PO 4 )
- ozone water in order to conduct a first cleaning process (S 1 ).
- S 2 a first rinsing process
- ultrapure water at 50° Celsius or higher.
- first heat treatment is conducted in a gas atmosphere which includes one or more selected from N 2 , O 2 , Ar, and He in an electric heating furnace at 50-1000° Celsius for 5 min-5 hours.
- a second rinsing process (S 4 ) is conducted using ultrapure water at 50° Celsius or higher.
- a second cleaning process (S 5 ) is conducted using an aqueous solution (SC-1) including ammonia water as a base and hydrogen peroxide mixed with each other and hydrogen water.
- a third rinsing process (S 6 ) is then conducted using ultrapure water at 50° Celsius or higher.
- second heat treatment is conducted in a gas atmosphere which includes one or more selected from N 2 , Ar, O 2 , and He gases in an electric heating furnace at 50-1000° Celsius for 5 min-5 hours.
- the first and second heat treatments may be conducted in a convection oven, and it is preferable that the heat treating temperature be 50-400° Celsius.
- ammonia (NH 4 ) ions present on the surface of the photomask are dissociated by heat at an early step in the heat treatment, thus being desorbed from the photomask.
- a phase change of Cr and blocking (MoSiON) films is prevented.
- the ammonia (NH 4 ) ions remaining on the photomask cannot be diffused outside during exposure of a wafer, and the residual ions are activated.
- the ammonia (NH 4 ) ions included in the SC-1 do not diffuse into the Cr and MoSiON layers during a cleaning process using bases.
- the change in phase and transmissivity of optical properties of the MoSiON layer is controlled by nitrification (MoSiN) of MoSi. Additionally, acidic residual ions are activated and the ammonia ions are vaporized. As well, if Ar or He gas is used, the residual ions on the surface of the mask are activated and the ammonia ions are vaporized without oxidation or nitrification of MoSiON.
- MoSiN nitrification
- the present invention provides a device and a method for cleaning a photomask, in which the photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby diffusion of the ions is prevented.
- the present invention provides a device and a method of cleaning a photomask, in which etching of Cr and MoSiON layers due to a cleaning process is suppressed so as to significantly reduce a change in phase and transmissivity of the optical properties of Cr and MoSiON.
Abstract
Disclosed herein is a device for cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.
Description
- The present invention is a divisional application of U.S. application Ser. No. 11/276,974 filed Mar. 20, 2006.
- 1. Field of the Invention
- The present invention relates to a cleaning device and method. More particularly, the present invention pertains to a device and a method of cleaning a photomask that prevent haze from being generated on a surface of the photomask during a photolithography process.
- 2. Description of the Related Art
- In accordance with increased integration of semiconductor devices, wavelengths of exposure sources are becoming shorter and shorter in order to improve the resolution of patterns. Accordingly, a haze, which is not formed in a conventional wavelength band, may occur. In a conventional photolithography process at a wavelength above an I-line, exposing energy is relatively low, thus a phenomenon in which residual ions, such as SOx, NOx, POx, F, Cl, NH4, Ca, and Mg, on a surface of a photomask cause an optical reaction does not occur.
- However, at a light source of 248 nm or less, exposing energy is increased as a wavelength is shortened. Therefore, an optical reaction occurs between the residual ions on the surface of the mask, and a growth defect called a haze is formed.
- A conventional wet cleaning device and method is problematic in that it cannot completely remove such haze.
- Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a device and a method of cleaning a photomask, in which heat treatment is conducted after a cleaning process in order to remove residual ions from the surface of the mask, and consequently, haze is prevented and optical property changes to a phase shift mask are reduced.
- In order to accomplish the above object, the present invention provides a device for cleaning a photomask. The device comprises a first cleaning unit for cleaning the photomask using acids to remove a polymer formed on the photomask, a second cleaning unit for cleaning the photomask using bases, a heat treating unit for heat treating the photomask cleaned using the acids and bases, a cooling unit for cooling the heat treated high temperature photomask, and a robot arm for carrying the photomask.
- Preferably, the heat treating unit is an electric heating furnace or a convection oven.
- The present invention also provides a method of cleaning a photomask. The method comprises (a) conducting a first cleaning process using acids to remove a polymer formed on the photomask, (b) conducting a second cleaning process using heated hydrogen peroxide and ozone water, (c) conducting first heat treatment, (d) conducting a third cleaning process using bases, (e) conducting a fourth cleaning process using the heated hydrogen peroxide and ozone water, and (f) conducting second heat treatment.
- Preferably, acidic residual ions and ions that react with ammonia are activated, and the surface of the mask is oxidized in step (c).
- Preferably, ammonia is removed from the surface of the mask using a chemical reaction during the cleaning process using bases, and oxygen is applied on the surface of the mask in steps (b) and (e).
- Preferably, ions that react with ammonia are activated, basic residual ions are vaporized, and the surface of the mask is oxidized in step (f).
- Preferably, the method further comprises conducting a rinsing process using ultrapure water after step (a).
- Preferably, step (a) is conducted using an aqueous solution including hydrogen peroxide mixed with one of a sulfuric acid, a nitric acid, or a phosphoric acid, and the ozone water.
- Preferably, steps (b) and (e) are conducted at 40-100° Celsius.
- Preferably, the heat treatment is conducted in a gas atmosphere which includes one or more selected from the group consisting of N2, Ar, O2, and He gases.
- Preferably, step (d) is conducted using an aqueous solution (SC-1) including ammonia water and hydrogen peroxide mixed with each other, and hydrogen water.
- Preferably, the heat treatment is conducted at 50-1000° Celsius for 5 min-5 hours.
- Preferably, the heat treatment is conducted at 50-4000 Celsius.
- More preferably, the basic residual ions are ammonia (NH4).
- Furthermore, the present invention provides a method of cleaning a photomask. The method comprises (a′) conducting a first cleaning process using acids, (b′) conducting first heat treatment to activate acidic residual ions, (c′) conducting a rinsing process using ultrapure water to remove the activated acidic residual ions, and (d′) conducting a second cleaning process using bases.
- Preferably, the method further comprises step (e′) of conducting second heat treatment in order to vaporize basic residual ions after step (d′).
- Preferably, the rinsing process is conducted using the ultrapure water after the cleaning process and the heat treatment.
- Preferably, step (a) is conducted using an aqueous solution including hydrogen peroxide mixed with one of a sulfuric acid, a nitric acid, or a phosphoric acid, and ozone water.
- Preferably, the heat treatment is conducted in a gas atmosphere which includes one or more selected from a group consisting of N2, Ar, O2, and He gases.
- Preferably, step (d′) is conducted using an aqueous solution (SC-1) including ammonia water and hydrogen peroxide mixed with each other, and hydrogen water.
- Preferably, the heat treatment is conducted at 50-1000° Celsius for 5 min-5 hours.
- Preferably, the heat treatment is conducted at 50-400° Celsius.
- More preferably, the basic residual ions are ammonia (NH4) ions.
- The above and other objects, features and advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
-
FIG. 1 illustrates a device for cleaning a photomask according to the present invention; -
FIG. 2 is a flowchart showing a process of cleaning a photomask according to an embodiment of the present invention; and -
FIG. 3 is a flowchart showing a process of cleaning a photomask according to another embodiment of the present invention. - Hereinafter, a detailed description will be given of the present invention, referring to the accompanying drawings.
-
FIG. 1 illustrates a device for cleaning a photomask according to the present invention. - As shown in
FIG. 1 , the device for cleaning a photomask according to the present invention comprises afirst cleaning unit 10, asecond cleaning unit 20, arobot arm 30, aheat treating unit 40, acooling unit 50, and aphotomask carrier 60. - The
first cleaning unit 10 cleans the photomask using acids to remove a polymer formed on the photomask. - Furthermore, the
second cleaning unit 20 cleans the photomask using bases. - As well, the
robot arm 30 carries the photomask. - Additionally, the
heat treating unit 40 heat treats the photomask, which was cleaned using the acids and bases. - In the present embodiment, illustrative, but, non-limiting, examples of the heat treating unit include an electric heating furnace and a convection oven.
- Additionally, the
cooling unit 50 cools the heat treated high temperature photomask. - Further, the
photomask carrier 60 stores and carries the photomask. - Hereinafter, a description will be given of a method of cleaning the photomask using the device for cleaning the photomask according to the present invention.
- A method of cleaning a photomask according to an embodiment of the present invention will be described, referring to
FIG. 2 . -
FIG. 2 is a flowchart showing a process of cleaning a photomask according to an embodiment of the present invention. - As shown in
FIG. 2 , a polymer formed on the photomask is removed using an aqueous solution, including hydrogen peroxide mixed with an acid, such as a sulfuric acid (H2SO4), a nitric acid (HNO3), or a phosphoric acid (H3PO4), and ozone water, in order to conduct afirst cleaning process 100. Next, afirst rinsing process 101 is conducted using ultrapure water at 50° Celsius or higher. - Subsequently, ammonia is removed from a surface and an inside of the mask using hydrogen peroxide and ozone water heated at 40-100° Celsius to conduct a
second cleaning process 102. Oxygen is then applied to the surface of the mask. Subsequently, asecond rinsing process 103 is conducted using ultrapure water at 50° Celsius or higher. -
First heat treatment 104 is then conducted in a gas atmosphere which includes one or more selected from N2, O2, Ar, and He in the electric heating furnace at 50-1000° Celsius for 5 min-5 hours. Due to the first heat treatment, ions that react with ammonia in thesecond cleaning process 102 and acid-based residual ions, such as SOx, NOx, and POx, are activated, and the surface of the mask is oxidized. Accordingly, ammonia cannot permeate through the surface of the mask during a cleaning process that uses tertiary bases. - Subsequently, the residual ions activated by the
first heat treatment 104 are removed by a third rinsing process 105. In the third rinsing process, ultrapure water at 50° Celsius or higher is used. - Next, a
third cleaning process 106 is conducted using an aqueous solution (SC-1) including ammonia water as a base and hydrogen peroxide mixed with each other and hydrogen water. Afourth rinsing process 107 is then conducted using ultrapure water at 50° Celsius or higher. - Subsequently, a fourth cleaning process 108 is conducted using hydrogen peroxide and ozone water heated at 40-100° Celsius. As a result, during the
third cleaning process 106 using the tertiary base, ammonia is removed from the surface and the inside of the mask. Next, oxygen is applied on the surface of the mask. Subsequently, a fifth rinsing process 109 is conducted using ultrapure water at 50° Celsius or higher. - Subsequently,
second heat treatment 110 is conducted in a gas atmosphere which includes one or more selected from N2, Ar, O2, and He gases in the electric heating furnace at 50-1000° Celsius for 5 min-5 hours. Due to the second heat treatment, ions which remain on the surface of the photomask and that react with ammonia in the fourth cleaning process 108 are activated. Additionally, ammonia (NH4) as a basic residual ion is vaporized to oxidize the surface of the mask. The first and second heat treatments may be conducted in a convection oven, and it is preferable that the heat treating temperature be 50-400° Celsius. - Finally, a
sixth rinsing process 111 is conducted using ultrapure water at 50° Celsius or higher. - A method of cleaning a photomask according to another embodiment of the present invention will be described with reference to
FIG. 3 . -
FIG. 3 is a flowchart showing a process of cleaning a photomask according to another embodiment of the present invention. - As shown in
FIG. 3 , a polymer formed on the photomask is removed using an aqueous solution including acids, such as hydrogen peroxide mixed with a sulfuric acid (H2SO4), a nitric acid (HNO3), or a phosphoric acid (H3PO4), and ozone water in order to conduct a first cleaning process (S1). Next, a first rinsing process (S2) is conducted using ultrapure water at 50° Celsius or higher. - Subsequently, in order to activate the acidic residual ions, such as SOx, NOx, and POx, first heat treatment (S3) is conducted in a gas atmosphere which includes one or more selected from N2, O2, Ar, and He in an electric heating furnace at 50-1000° Celsius for 5 min-5 hours.
- To remove the residual ions activated by the first heat treatment, a second rinsing process (S4) is conducted using ultrapure water at 50° Celsius or higher.
- Next, a second cleaning process (S5) is conducted using an aqueous solution (SC-1) including ammonia water as a base and hydrogen peroxide mixed with each other and hydrogen water. A third rinsing process (S6) is then conducted using ultrapure water at 50° Celsius or higher.
- Subsequently, in order to vaporize ammonia (NH4) as the basic residual ion remaining on the surface of the photomask, second heat treatment (S7) is conducted in a gas atmosphere which includes one or more selected from N2, Ar, O2, and He gases in an electric heating furnace at 50-1000° Celsius for 5 min-5 hours. The first and second heat treatments may be conducted in a convection oven, and it is preferable that the heat treating temperature be 50-400° Celsius.
- Finally, a fourth rinsing process (S8) is conducted using ultrapure water at 50° Celsius or higher.
- In the present invention, when the heat treatment is conducted using oxygen (O2) gas, ammonia (NH4) ions present on the surface of the photomask are dissociated by heat at an early step in the heat treatment, thus being desorbed from the photomask. During the heat treatment, a phase change of Cr and blocking (MoSiON) films is prevented. Furthermore, due to oxidation, the ammonia (NH4) ions remaining on the photomask cannot be diffused outside during exposure of a wafer, and the residual ions are activated. Due to a phase change and oxidation of the MoSiON layer, the ammonia (NH4) ions included in the SC-1 do not diffuse into the Cr and MoSiON layers during a cleaning process using bases.
- If the heat treatment is conducted using N2 gas, the change in phase and transmissivity of optical properties of the MoSiON layer is controlled by nitrification (MoSiN) of MoSi. Additionally, acidic residual ions are activated and the ammonia ions are vaporized. As well, if Ar or He gas is used, the residual ions on the surface of the mask are activated and the ammonia ions are vaporized without oxidation or nitrification of MoSiON.
- As described above, the present invention provides a device and a method for cleaning a photomask, in which the photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby diffusion of the ions is prevented.
- Additionally, the present invention provides a device and a method of cleaning a photomask, in which etching of Cr and MoSiON layers due to a cleaning process is suppressed so as to significantly reduce a change in phase and transmissivity of the optical properties of Cr and MoSiON.
- Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.
Claims (4)
1. A device for cleaning a photomask, comprising:
a first cleaning unit for cleaning the photomask using an acid in order to remove a polymer formed on the photomask;
a second cleaning unit for cleaning the photomask using a base;
a heat treating unit for heat treating the photomask cleaned using the acids and bases;
a cooling unit for cooling the heat-treated photomask, which is at a high temperature; and
a robot arm for carrying the photomask between said units.
2. The device as set forth in claim 1 , wherein the heat treating unit is an electric heating furnace or a convection oven.
3. The device as set forth in claim 1 , wherein the acid is selected from the group consisting of sulfuric acid, nitric acid, and phosphoric acid.
4. The device as set forth in claim 1 , wherein the heat treatment unit uses a gas atmosphere which includes one or more gases selected from a group consisting of N2, Ar, O2, and He.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/624,266 US20070215188A1 (en) | 2006-03-20 | 2007-01-18 | Device for cleaning a photomask |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/276,974 US7186301B2 (en) | 2005-03-21 | 2006-03-20 | Device and method for cleaning photomask |
US11/624,266 US20070215188A1 (en) | 2006-03-20 | 2007-01-18 | Device for cleaning a photomask |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/276,974 Division US7186301B2 (en) | 2005-03-21 | 2006-03-20 | Device and method for cleaning photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070215188A1 true US20070215188A1 (en) | 2007-09-20 |
Family
ID=38516500
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/624,275 Active US7377984B2 (en) | 2006-03-20 | 2007-01-18 | Method for cleaning a photomask |
US11/624,266 Abandoned US20070215188A1 (en) | 2006-03-20 | 2007-01-18 | Device for cleaning a photomask |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/624,275 Active US7377984B2 (en) | 2006-03-20 | 2007-01-18 | Method for cleaning a photomask |
Country Status (1)
Country | Link |
---|---|
US (2) | US7377984B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106111620A (en) * | 2016-07-29 | 2016-11-16 | 吴江富凯医用卫生用品有限公司 | A kind of high efficiency batch that carries out medical bandage cleans and the device of sterilization |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010261987A (en) * | 2009-04-30 | 2010-11-18 | Shin-Etsu Chemical Co Ltd | Photomask |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6071376A (en) * | 1997-12-02 | 2000-06-06 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for cleaning photomask |
US6228540B1 (en) * | 1998-02-26 | 2001-05-08 | Sharpe Kabushiki Kaisha | Method of forming a photomask of high dimensional accuracy utilizing heat treatment equipment |
US20010005944A1 (en) * | 1999-12-30 | 2001-07-05 | Dao Giang T. | Reduced particle contamination manufacturing and packaging for reticles |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6162565A (en) * | 1998-10-23 | 2000-12-19 | International Business Machines Corporation | Dilute acid rinse after develop for chrome etch |
JP4484980B2 (en) * | 1999-05-20 | 2010-06-16 | 株式会社ルネサステクノロジ | Photomask cleaning method, cleaning apparatus, and photomask cleaning liquid |
JP2002009035A (en) * | 2000-06-26 | 2002-01-11 | Toshiba Corp | Method and device for washing substrate |
JP4000247B2 (en) * | 2001-04-18 | 2007-10-31 | 株式会社ルネサステクノロジ | Photomask cleaning method |
TW556056B (en) * | 2002-02-08 | 2003-10-01 | Macronix Int Co Ltd | Method of removing photo-resist and polymer residue |
TWI377453B (en) * | 2003-07-31 | 2012-11-21 | Akrion Technologies Inc | Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing |
KR100745065B1 (en) * | 2004-12-27 | 2007-08-01 | 주식회사 하이닉스반도체 | Method for removing a growth particle on Phase Shift Mask |
-
2007
- 2007-01-18 US US11/624,275 patent/US7377984B2/en active Active
- 2007-01-18 US US11/624,266 patent/US20070215188A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6071376A (en) * | 1997-12-02 | 2000-06-06 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for cleaning photomask |
US6228540B1 (en) * | 1998-02-26 | 2001-05-08 | Sharpe Kabushiki Kaisha | Method of forming a photomask of high dimensional accuracy utilizing heat treatment equipment |
US20010005944A1 (en) * | 1999-12-30 | 2001-07-05 | Dao Giang T. | Reduced particle contamination manufacturing and packaging for reticles |
US6732746B2 (en) * | 1999-12-30 | 2004-05-11 | Intel Corporation | Reduced particle contamination manufacturing and packaging for reticles |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106111620A (en) * | 2016-07-29 | 2016-11-16 | 吴江富凯医用卫生用品有限公司 | A kind of high efficiency batch that carries out medical bandage cleans and the device of sterilization |
Also Published As
Publication number | Publication date |
---|---|
US20070215181A1 (en) | 2007-09-20 |
US7377984B2 (en) | 2008-05-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7186301B2 (en) | Device and method for cleaning photomask | |
KR101003375B1 (en) | Method for manufacturing a lithographic mask and lithographic mask | |
US20060257752A1 (en) | Phase shift mask for preventing haze | |
TWI261880B (en) | Photolithography method to prevent photoresist pattern collapse | |
US20060019178A1 (en) | Method of repairing phase shift mask | |
TW200523989A (en) | Method for forming resist pattern and method for manufacturing semiconductor device | |
JP2006165531A5 (en) | ||
US7462248B2 (en) | Method and system for cleaning a photomask | |
KR100679669B1 (en) | Method for cleaning a photo mask | |
US7377984B2 (en) | Method for cleaning a photomask | |
KR100745065B1 (en) | Method for removing a growth particle on Phase Shift Mask | |
KR100612330B1 (en) | Apparatus for cleaning a photo mask | |
KR100612329B1 (en) | Method for cleaning a photo mask | |
KR20080001473A (en) | Method for fabricating haze defects free photo mask | |
US20090123878A1 (en) | Patterning method | |
JP2009105248A (en) | Pattern formation method | |
JP2006032992A (en) | Manufacturing method of semiconductor device, and substrate treating apparatus | |
US8470519B2 (en) | Method for removing photoresist pattern | |
JP2003045777A (en) | Method for forming minute resist pattern | |
JP4775092B2 (en) | Heat treatment method for resist coated substrate | |
KR20090113715A (en) | Method for exposure using extreme ultra violet with tungsten halogen lamp | |
JP2009294568A (en) | Method for forming surface protective film and device for forming surface protective film | |
JPH07142342A (en) | Method and apparatus for forming pattern | |
KR980010625A (en) | Photo etching method of semiconductor device | |
JP2004103651A (en) | Method of forming thin film and method of manufacturing semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: PKL CO., LTD., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KIM, YONG DAE;KIM, JONG MIN;KANG, HAN BYUL;AND OTHERS;REEL/FRAME:018770/0438 Effective date: 20060310 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |