US20070205794A1 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- US20070205794A1 US20070205794A1 US11/639,278 US63927806A US2007205794A1 US 20070205794 A1 US20070205794 A1 US 20070205794A1 US 63927806 A US63927806 A US 63927806A US 2007205794 A1 US2007205794 A1 US 2007205794A1
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- potential
- power supply
- test
- semiconductor device
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2879—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Definitions
- the present invention relates to techniques for reducing the number of terminals requiring probes when probe testing and wafer level burn-in is performed in fabrication process steps for fabricating a semiconductor device.
- system LSI integrated circuits having various different functions are placed within a single chip or a single package, and individual power supply systems and ground systems provided for the integrated circuits, respectively, have to be integrated as a single power supply system and a single ground system of the chip or of the package.
- One of the most effective solutions to this challenge is to examine a plurality of integrated circuits by a single test.
- wafer level burn-in i.e., burn-in to be performed at a wafer level
- a stress can be applied to the integrated circuits in a lump for each wafer.
- this testing technique as the degree of integration is enhanced and the number of chips obtained from a single wafer is increased, its effects in efficiency and cost performance become larger.
- respective power supply lines of a plurality of circuit blocks are connected to separate power supply pads, respectively, and a switch circuit is provided between a specific one of the power supply lines and each of the other ones of the power supply lines.
- a power supply potential is applied to one of the power supply pads connected to the specific one of the power supply lines and the switch circuits are turned to be in a conduction state (see U.S. Pat. No. 5,404,099).
- inter-power-supply protection transistors are provided so that each of the protection transistors is connected in parallel to each switch circuit between the power supply lines.
- each of the inter-power-supply protection transistors serves as a switch circuit between power supply lines (see United States Patent Application Publication No. 2005/0067899).
- a semiconductor device includes: a plurality of circuit blocks each having an independent power supply system; a plurality of power supply lines connected to the plurality of circuit blocks, respectively; a plurality of power supply pads for supplying a potential to each of the plurality of power supply lines; a test-use power supply line being not directly connected to any one of the plurality of circuit blocks; a test-use power supply pad for supplying a potential to the test-use power supply line; and a plurality of potential transfer circuits for transferring a potential from the test-use power supply line to the plurality of power supply lines.
- a potential is transferred to the plurality of power supply lines from the test-use power supply line.
- FIG. 1 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a first embodiment of the present invention.
- FIG. 2 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a second embodiment of the present invention.
- FIG. 3 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a third embodiment of the present invention.
- FIG. 4 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a fourth embodiment of the present invention.
- FIG. 5 is a block diagram illustrating a modified example of the semiconductor integrated circuit of FIG. 4 .
- FIG. 6 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a fifth embodiment of the present invention.
- FIG. 7 is a block diagram illustrating a modified example of the semiconductor integrated circuit of FIG. 6 .
- FIG. 1 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a first embodiment of the present invention.
- a semiconductor integrated circuit 10 includes circuit blocks (blocks A, B and C) 100 , 101 and 102 .
- power supply voltages VDDA, VDDB and VDDC are supplied to the circuit blocks 100 , 101 and 102 from power supply pads 300 , 301 and 302 , respectively, through respective power supply lines 200 , 201 and 202 .
- ground potentials VSSA, VSSB and VSSC are supplied to the circuit blocks 100 , 101 and 102 from ground pads 310 , 311 and 312 , respectively, through respective ground lines 210 , 211 and 212 .
- the semiconductor integrated circuit 10 further includes a test-use power supply pad 303 and a test-use ground pad 313 , and the test-use power supply pad 303 and the test-use ground pad 313 supply a power potential WVDD and a ground potential WVSS supplied from the outside to a test-use power supply line 203 and a test-use ground line 213 , respectively.
- Each of the test-use power supply line 203 and the test-use ground line 213 is not directly connected to the circuit blocks 100 , 101 and 102 and does not supply a power potential or a ground potential when the semiconductor integrated circuit 10 is actually used.
- Potential transfer circuits 420 , 421 and 422 are connected between the test-use power supply line 203 and the power supply line 200 , between the test-use power supply line 203 and the power supply line 201 and between the test-use power supply line 203 and the power supply line 202 , respectively.
- the potential transfer circuits 420 , 421 and 422 include as their components diode devices 500 , 501 and 502 , respectively.
- potential transfer circuits 430 , 431 and 432 are connected between the test-use ground line 213 and the ground line 210 , between the test-use ground line 213 and the ground line 211 and between the test-use ground line 213 and the ground line 212 , respectively.
- the potential transfer circuits 430 , 431 and 432 include, as their components, diode devices 510 , 511 and 512 , respectively.
- test-use power supply pad 303 When wafer level burn-in or probe testing is performed, probes are made contact to each of the test-use power supply pad 303 and the test-use ground pad 313 , and a power supply potential and a ground potential are supplied to the test-use power supply pad 303 and the test-use ground pad 313 , respectively.
- the power supply potential supplied to the test-use power supply pad 303 is transferred to the power supply lines 200 , 201 and 202 and then to the circuit blocks 100 , 101 and 102 through the test-use power supply line 203 and the potential transfer circuits 420 , 421 and 422 including the diode devices 500 , 501 and 502 .
- a voltage drop is generated by each of the diode devices 500 , 501 and 502 , but by configuring respective sizes of the diode devices 500 , 501 and 502 and respective resistance components of the potential transfer circuits 420 , 421 and 422 so that a uniform voltage drop is generated in the power supply lines 200 , 201 and 201 , wafer level burn-in and probe testing can be performed without causing a non-uniform voltage in the semiconductor integrated circuit 10 .
- the ground potential supplied to the test-use ground pad 313 is transferred to the ground lines 210 , 211 and 212 and then to the circuit blocks 100 , 101 and 102 through the test-use ground line 213 and the potential transfer circuits 430 , 431 and 432 including the diode devices 510 , 511 and 512 .
- a voltage rise of the ground potential is caused by each of the diode devices 510 , 511 and 512 , but by configuring respective sizes of the diode devices 510 , 511 and 512 and respective resistance components of the potential transfer circuits 430 , 431 and 432 so that uniform voltage rise is caused in the ground lines 210 , 211 and 212 , wafer level burn-in and probe testing can be performed without causing a non-uniform voltage in the semiconductor integrated circuit 10 .
- An amount of a power supply voltage drop caused by each of the diode devices 500 , 501 and 502 and an amount of a ground potential rise generated by each of the diode devices 510 , 511 and 512 can be corrected by changing a voltage value supplied to each of the test-use power supply pad 303 and the test-use ground pad 313 and thus a burn-in stress level and a test voltage level are not reduced. Moreover, when wafer level burn-in is performed, probes are required only for the test-use power supply pad 303 and the test-use ground pad 313 . Thus, the number of probes is not increased.
- a single pad is provided as each of the test-use power supply pad 303 and the test-use ground pad 313 .
- a plurality of pads may be provided as each of the test-use power supply pad 303 and the test-use ground pad 313 .
- FIG. 2 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a second embodiment of the present invention. The description of each member also shown in the first embodiment will be omitted.
- Potential transfer circuits 440 , 441 and 442 are connected between a test-use power supply line 203 and a power supply line 200 , between the test-use power supply line 203 and a power supply line 201 and between the test-use power supply line 203 and a power supply lines 202 , respectively.
- the potential transfer circuits 440 , 441 and 442 include as their components switch circuits 503 , 504 and 505 each being formed of an NMOS transistor, respectively.
- potential transfer circuits 450 , 451 and 452 are connected between a test-use ground line 213 and a ground line 210 , between the test-use ground line 213 and a ground line 211 and between the test-use ground line 213 and a ground line 212 , respectively.
- the potential transfer circuits 450 , 451 and 452 include as their components switch circuits 513 , 514 and 515 each being formed of an NMOS transistor, respectively.
- Each of respective gates of the NMOS switch circuits 503 , 504 , 505 , 513 , 514 and 515 is connected to a conduction control use pad 350 provided in a conduction control circuit 600 .
- each of the switch circuits 503 , 504 , 505 , 513 , 514 and 515 is controlled to be in a conduction state or in a non-conduction state.
- the conduction control use pad 350 is connected to one of the ground lines 210 , 211 and 212 via a pull-down resistor 800 .
- a potential can be supplied from the test-use power supply pad 303 to the power supply lines 200 , 201 and 202 via the switch circuits 503 , 504 and 505 , respectively, and from the test-use ground pad 313 to the ground lines 210 , 211 and 212 via the switch circuits 513 , 514 and 515 , respectively. Therefore, the number of pads to be probed is three. That is, only the test-use power supply pad 303 , the test-use ground pad 313 and the conduction control use pad 350 are required.
- an amount of power supply voltage drop and an amount of ground potential rise generated by the switch circuits are corrected by adjusting respective transistor sizes of the NMOS switch circuits 503 , 504 , 505 , 513 , 514 and 515 and applying a voltage to the test-use power supply pad 303 , the test-use ground pad 313 and the conduction control use pad 350 .
- the conduction control use pad 350 is connected to the ground line 211 via the pull-down resistor 800 and, unless a potential is externally supplied to the conduction control use pad 350 , the conduction control use pad 350 is controlled to have a potential at which each of the switch circuits 503 , 504 , 505 , 513 , 514 and 515 is turned in a non-conduction state.
- the number of probes is increased.
- Vt threshold voltage
- a potential is supplied to the conduction control use pad 350 to control each of the switch circuits 503 , 504 , 505 , 513 , 514 and 515 to be in a conduction state, so that a voltage drop or a voltage rise can be reduced to a level corresponding to an ON resistance of each switch.
- a pull-up resistor (not shown) may be provided to form a configuration in which unless a ground potential is externally supplied to the conduction control use pad 350 , each of the PMOS switch circuits are turned to be in a non-conduction state, and thus an inverter circuit (not shown) may be provided between the conduction control use pad 350 and a gate signal of each of the NMOS switch circuits 513 , 514 and 515 to control each of the NMOS switch circuits 513 , 514 and 515 to be in a conduction state or in a non-conduction state with a reverse signal of a signal input from the conduction control use pad 350 .
- FIG. 3 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a third embodiment of the present invention. Description of each member also shown in the first and second embodiments will be omitted.
- a semiconductor integrated circuit 10 includes a test mode determination pad 351 .
- the test mode determination pad 351 is connected to circuit blocks 100 , 101 and 102 through test mode signal lines 250 , 251 and 252 , respectively.
- the test mode determination pad 351 is connected to any one of ground lines 210 , 211 and 212 via a level shifter 810 .
- the level shifter 810 has a configuration including two resistor devices 530 and 531 connected in series.
- a potential signal generated according to the resistance ratio between the resistor devices 530 and 531 is connected as a gate signal to each of respective low break-down voltage NMOS switch circuits 516 , 517 and 518 of the potential transfer circuits 450 , 451 and 452 .
- Respective gates of NMOS switch circuits 503 , 504 and 505 constituting potential transfer circuits 440 , 441 and 442 , respectively, are directly connected to the test mode determination pad 351 .
- the semiconductor integrated circuit 10 having the configuration of FIG. 3 When a specific potential is supplied to the test mode determination pad 351 , the semiconductor integrated circuit 10 and the circuit blocks 100 , 101 and 102 as its components are set to be in a wafer level burn-in test mode or in an arbitrary test mode through the test mode signal lines 250 , 251 and 252 .
- each of the NMOS switch circuits 503 , 504 and 505 constituting the potential transfer circuits 440 , 441 and 442 , respectively, is turned to be in a conduction state and performs the same operation as that described in the first and second embodiments, so that a power supply voltage is supplied from a test-use power supply pad 303 to the circuit blocks 100 , 101 and 102 .
- a potential is generated by voltage dividing of a potential supplied from the test mode determination pad 351 using the resistance ratio between the resistor devices 530 and 531 and an obtained potential is transferred to respective gates of NMOS switch circuits 516 , 517 and 518 constituting potential transfer circuits 450 , 451 and 452 , respectively, in a subsequent stage.
- Each of the NMOS switch circuits 516 , 517 and 518 is turned to be in a conduction state and performs the same operation as that described in the first and second embodiments, so that a ground potential is supplied from a test-use ground pad 313 to the circuit blocks 100 , 101 and 102 .
- each of respective transistors of the potential transfer circuits 440 , 441 , 442 , 450 , 451 and 452 is controlled by the conduction control use pad 350 to be in a conduction state or in a non-conduction state.
- the semiconductor integrated circuit 10 is set to be in an arbitrary test mode and then testing is performed. In such a case, the semiconductor integrated circuit 10 is set to be in an arbitrary test mode and thus at least one pad is needed.
- the transistors of the potential transfer circuits 440 , 441 , 442 , 450 , 451 and 452 are controlled to be in a conduction state or in a non-conduction state, so that the number of probes necessary for wafer level burn-in and probe testing is reduced.
- a voltage level of a signal for controlling the NMOS switch circuits 516 , 517 and 518 constituting the potential transfer circuits 450 , 451 and 452 , respectively, is reduced by the level shifter 810 .
- respective break-down voltages of the NMOS switch circuits 516 , 517 and 518 can be reduced, so that an area of each switch circuit can be effectively reduced.
- FIG. 4 is a block diagram illustrating a configuration of a control system for potential transfer circuits 460 , 461 and 462 according to a fourth embodiment of the present invention. The description of each member also shown in the first through third embodiments will be omitted.
- the potential transfer circuit 460 includes a parallel switch circuit 520 which includes two NMOS switch circuits 521 and 522 and is connected between a test-use power supply line 203 and a power supply line 200 .
- One of the two switch circuits of the parallel switch circuit 520 i.e., the switch circuit 521 has a gate directly connected to a conduction control circuit 600 and the other one, i.e., the switch circuit 522 is connected to the conduction control circuit 600 and a potential change control circuit 610 via an AND circuit 523 .
- the conduction control circuit 600 includes a conduction control signal decoder 550 and is connected so as to receive a signal output from a register 552 provided in the semiconductor integrated circuit and then output a conduction control signal to the potential transfer circuits 460 , 461 and 462 .
- the potential change control circuit 610 includes a potential change control signal decoder 551 for decoding an output of the register 552 .
- An output signal of the potential change control signal decoder 551 is connected to the potential transfer circuits 460 , 461 and 462 . Note that in FIG. 4 , for the purpose of simplification, only the configuration of the potential transfer circuit 460 is illustrated. However, each of the potential transfer circuits 461 and 462 has the same configuration as that of the potential transfer circuit 460 .
- each of the potential transfer circuits 460 , 461 and 462 receives the conduction control signal from the conduction control circuit 600 , at least the NMOS switch circuit 521 in the parallel switch circuit 520 is turned to be in a conduction state and performs the same operation as that described in the third embodiment to supply a power potential to the circuit blocks 100 , 101 and 102 (not shown) from a test-use power supply pad 303 .
- the register 552 has the function of storing an instruction for executing control over the number of switch circuits to be turned in a conduction state in the parallel switch circuit 520 in each of the potential transfer circuits 460 , 461 and 462 .
- an instruction for executing control so that both of the two NMOS switch circuits 521 and 522 of the parallel switch circuit 520 in the potential transfer circuit 460 are turned to be in a conduction state is stored in the register 552
- the decoder 551 in the potential change control circuit 610 transfers a H level signal to the potential transfer circuit 460 according to an output of the register 552 .
- the AND circuit 523 is activated by the H level signal output by the potential change control signal decoder 551 and each of the switch circuits 521 and 522 in the parallel switch circuit 520 is controlled to be in a conduction state.
- the parallel switch circuit 520 is controlled so that the two switch circuits 521 and 522 are to be in a conduction state.
- a power supply potential is supplied to the power supply line 200 from a test-use power supply pad 303 via the two switch circuits 521 and 522 .
- an ON resistance can be selectively controlled to be half by giving an instruction to the register 552 according to the amount of current consumption. Accordingly, it becomes possible to give flexibility to specification determination and design constraints and also, at the same time, to maintain voltage uniformity in the semiconductor integrated circuit.
- the parallel switch circuit 520 is configured to include the two NMOS switch circuits 521 and 522 .
- the number of NMOS switch circuits is not limited.
- the parallel switch circuit 520 may include an arbitrary number of NMOS switch circuits.
- each switch circuit may be formed of a PMOS transistor.
- the conduction control circuit 600 generates a conduction control signal by the decoder 550 .
- the decoder 551 instead of the decoder 551 , as shown in FIG. 5 , external change control pads 352 , 353 and 354 may be provided within an allowable range of the number of probes to control a voltage drop amount by the external change control pads 352 , 353 and 354 .
- a voltage drop amount is controlled by the parallel switch circuit 520 .
- a voltage conversion circuit 560 such as a regulator and the like may be provided to control a voltage drop amount in the voltage conversion circuit 560 according to an output of the potential change control circuit 610 .
- FIG. 4 and FIG. 5 the configurations and operations of the potential transfer circuits 460 , 461 and 462 connected between the test-use power supply line 203 and the power supply line 200 , between the test-use power supply line 203 and the power supply line 201 and between the test-use power supply line 203 and the power supply line 202 , respectively, have been described.
- the potential transfer circuits 450 , 451 and 452 connected between the test-use ground line 213 and the ground line 210 between the test-use ground line 213 and the ground line 211 and between the test-use ground line 213 and the ground lines 212 , respectively, an amount of a ground potential rise can be controlled by the same configurations and operations as those described in FIG. 4 and FIG. 5 .
- FIG. 6 is a block diagram illustrating a configuration of a control system for potential transfer circuits 480 , 481 and 482 according to a fifth embodiment of the present invention. The description of each member also shown in the first through third embodiments will be omitted.
- a conduction selection control circuit 620 includes a counter 553 and a conduction selection control signal decoder 554 .
- the conduction selection control signal decoder 554 is connected so as to transfer a conduction selection control signal to each of the potential transfer circuits 480 , 481 and 482 provided in a subsequent stage, according to a count value output by the counter 553 .
- Each of the potential transfer circuits 480 , 481 and 482 is configured to receive as inputs two signals, i.e., one of outputs of the conduction selection control signal decoder 554 and a conduction control signal output from a conduction control circuit 600 .
- Each of the potential transfer circuits 480 , 481 and 482 is controlled to be in a conduction state or in a non-conduction state.
- the counter 553 in the conduction selection control circuit 620 updates a count value according to an external clock or a count up (down) signal replacing the external clock signal.
- the conduction selection control signal decoder 554 outputs a conduction selection control signal to one of the potential transfer circuits 480 , 481 and 482 in the subsequent stage which is designated by the count number. Note that plural predetermined count values may be set in the decoder 554 .
- Each of the potential transfer circuits 480 , 481 and 482 is controlled to be in a conduction state when a corresponding conduction selection control signal is output by the conduction selection control circuit 620 and a conduction control signal is output by the conduction control circuit 600 . Accordingly, every time when the counter 553 updates its count value, a potential transfer circuit which is to be controlled in a conduction state is changed according to the count value and a circuit block to which a power supply potential is supplied from the test-use power supply pad 303 is changed.
- an amount of a current flowing in the test-use power supply pad 303 can be reduced by performing time sharing control to the operation of each of the potential transfer circuits 480 , 481 and 482 .
- the consumption current can be controlled to be within a range of the current tolerance of the equipment, probe or pad.
- the counter 553 is used as a component of the conduction selection control circuit 620 .
- a register can be provided instead of the counter 553 .
- a potential transfer circuit which is to be controlled in a conduction state can be changed by generating a conduction selection control signal in the decoder 554 according to an updated output of the register.
- external selection pads 355 , 356 and 357 can be provided in the conduction selection control circuit 620 so that a conduction selection control signal is directly supplied from the external selection pads 355 , 356 and 357 . In such a case, an area for each of the counter 553 and the decoder 554 can be also reduced.
- an amount of a current flowing in the test-use ground pad 313 can be controlled by the same configurations and operations as those described in FIG. 6 and FIG. 7 .
- the semiconductor device of the present invention is useful as a semiconductor integrated circuit and the like with an increased degree of integration.
Abstract
Description
- The present invention relates to techniques for reducing the number of terminals requiring probes when probe testing and wafer level burn-in is performed in fabrication process steps for fabricating a semiconductor device.
- In recent years, as the degree of shrinking and integration of semiconductor devices has been enhanced, development of system LSI has become mainstream. In a system LSI, integrated circuits having various different functions are placed within a single chip or a single package, and individual power supply systems and ground systems provided for the integrated circuits, respectively, have to be integrated as a single power supply system and a single ground system of the chip or of the package.
- However, when influences of noise interference between a digital circuit and an analog circuit or between a plurality of analog circuits due to sharing of a power supply system and a ground system is not negligible, normally, using some kind of means, power supply systems and ground systems have to be separated. As a result, a plurality of power supply terminals and a plurality of ground terminals have to be provided. The number of required power supply terminals and ground terminals is increased as the degree of integration is increased.
- In process steps for fabricating a semiconductor integrated circuit, as the degree of shrinking and integration has been enhanced, the number of chips obtained from a single wafer has been increased. Especially, since recent arrival of 300 mm wafer, this tendency has become more prominent. Therefore, in process steps of fabricating a semiconductor integrated circuit in mass production, how efficiently testing and burn-in can be performed at low cost has become a challenge.
- One of the most effective solutions to this challenge is to examine a plurality of integrated circuits by a single test. Especially, in recent years, there are an increased number of cases where wafer level burn-in, i.e., burn-in to be performed at a wafer level, is applied even for packaged products and thus a stress can be applied to the integrated circuits in a lump for each wafer. In this testing technique, as the degree of integration is enhanced and the number of chips obtained from a single wafer is increased, its effects in efficiency and cost performance become larger. By the same token, in for probe testing, when the number of chips obtained from a single wafer is increased, an immense amount of time is required to test a single wafer, and therefore a plurality of semiconductor integrated circuits (e.g., 8, 16 or 32 semiconductor integrated circuits) are tested at the same time to increase efficiency and reduce costs for testing.
- However, in this technique, the number of probes becomes a problem. Especially, in wafer level burn-in, since the number of probes provided per chip is limited because of restrictions for a burn-in equipment, it is not possible to apply probes to all pads of a system LSI at the same time. Needless to say, this problem more largely influences as the number of chips obtained from a single wafer is increased.
- In addition, as has been described, in a system LSI, a plurality of different power supply systems exist and a large number of power supply terminals and ground terminals exist. Therefore, the number of pads requiring probes when wafer level burn-in is performed is likely to be increased and thus the number of probes becomes a more serious problem.
- To solve this problem, according to a first known technique, respective power supply lines of a plurality of circuit blocks are connected to separate power supply pads, respectively, and a switch circuit is provided between a specific one of the power supply lines and each of the other ones of the power supply lines. When testing is performed, a power supply potential is applied to one of the power supply pads connected to the specific one of the power supply lines and the switch circuits are turned to be in a conduction state (see U.S. Pat. No. 5,404,099).
- According to a second known technique, as a measure against ESD (electrostatic discharge), inter-power-supply protection transistors are provided so that each of the protection transistors is connected in parallel to each switch circuit between the power supply lines. As another option, each of the inter-power-supply protection transistors serves as a switch circuit between power supply lines (see United States Patent Application Publication No. 2005/0067899).
- However, in each of the first and second known techniques, when wafer level burn-in is performed, a power supply potential is supplied to a plurality of circuit blocks via their respective switch circuits from a single power pad, so that a difference in potential level between power supply potentials of the plurality of circuit blocks is generated. The difference in potential level corresponds to an amount of a voltage drop due to an ON resistance of each switch circuit. Therefore, wafer level burn-in is performed in a state where respective potentials applied to the plurality of circuit blocks are different and a stress level becomes non-uniform in a semiconductor integrated circuit.
- It is therefore an object of the present invention to provide a semiconductor device in which highly precise wafer level burn-in and simultaneous multiple probe testing can be performed.
- To achieve the object, a semiconductor device according to the present invention includes: a plurality of circuit blocks each having an independent power supply system; a plurality of power supply lines connected to the plurality of circuit blocks, respectively; a plurality of power supply pads for supplying a potential to each of the plurality of power supply lines; a test-use power supply line being not directly connected to any one of the plurality of circuit blocks; a test-use power supply pad for supplying a potential to the test-use power supply line; and a plurality of potential transfer circuits for transferring a potential from the test-use power supply line to the plurality of power supply lines.
- According to the present invention, a potential is transferred to the plurality of power supply lines from the test-use power supply line. Thus, in wafer level burn-in or simultaneous multiple probe testing, if a power supply potential is supplied to the test-use power supply pad, a uniform power supply potential is given to the plurality of circuit blocks. As a result, highly precise burn-in or testing can be performed without increasing the number of probes.
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FIG. 1 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a first embodiment of the present invention. -
FIG. 2 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a second embodiment of the present invention. -
FIG. 3 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a third embodiment of the present invention. -
FIG. 4 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a fourth embodiment of the present invention. -
FIG. 5 is a block diagram illustrating a modified example of the semiconductor integrated circuit ofFIG. 4 . -
FIG. 6 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a fifth embodiment of the present invention. -
FIG. 7 is a block diagram illustrating a modified example of the semiconductor integrated circuit ofFIG. 6 . - Hereafter, embodiments of the present invention will be described with reference to the accompanying drawings.
-
FIG. 1 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a first embodiment of the present invention. InFIG. 1 , a semiconductor integratedcircuit 10 includes circuit blocks (blocks A, B and C) 100, 101 and 102. When each of thecircuit blocks circuit blocks power supply pads power supply lines circuit blocks ground pads respective ground lines circuit 10 further includes a test-usepower supply pad 303 and a test-use ground pad 313, and the test-usepower supply pad 303 and the test-use ground pad 313 supply a power potential WVDD and a ground potential WVSS supplied from the outside to a test-usepower supply line 203 and a test-use ground line 213, respectively. Each of the test-usepower supply line 203 and the test-use ground line 213 is not directly connected to thecircuit blocks circuit 10 is actually used.Potential transfer circuits power supply line 203 and thepower supply line 200, between the test-usepower supply line 203 and thepower supply line 201 and between the test-usepower supply line 203 and thepower supply line 202, respectively. Thepotential transfer circuits components diode devices potential transfer circuits use ground line 213 and theground line 210, between the test-use ground line 213 and theground line 211 and between the test-use ground line 213 and theground line 212, respectively. Thepotential transfer circuits diode devices 510, 511 and 512, respectively. - Next, the operation of the semiconductor integrated
circuit 10 having the configuration ofFIG. 1 will be described. When wafer level burn-in or probe testing is performed, probes are made contact to each of the test-usepower supply pad 303 and the test-use ground pad 313, and a power supply potential and a ground potential are supplied to the test-usepower supply pad 303 and the test-use ground pad 313, respectively. The power supply potential supplied to the test-usepower supply pad 303 is transferred to thepower supply lines circuit blocks power supply line 203 and thepotential transfer circuits diode devices diode devices diode devices potential transfer circuits power supply lines circuit 10. - In the same manner, the ground potential supplied to the test-
use ground pad 313 is transferred to theground lines circuit blocks use ground line 213 and thepotential transfer circuits diode devices 510, 511 and 512. In this case, a voltage rise of the ground potential is caused by each of thediode devices 510, 511 and 512, but by configuring respective sizes of thediode devices 510, 511 and 512 and respective resistance components of thepotential transfer circuits ground lines circuit 10. - An amount of a power supply voltage drop caused by each of the
diode devices diode devices 510, 511 and 512 can be corrected by changing a voltage value supplied to each of the test-usepower supply pad 303 and the test-use ground pad 313 and thus a burn-in stress level and a test voltage level are not reduced. Moreover, when wafer level burn-in is performed, probes are required only for the test-usepower supply pad 303 and the test-use ground pad 313. Thus, the number of probes is not increased. - Note that in
FIG. 1 , a single pad is provided as each of the test-usepower supply pad 303 and the test-use ground pad 313. However, as long as the number of probes is an allowable number, a plurality of pads may be provided as each of the test-usepower supply pad 303 and the test-use ground pad 313. -
FIG. 2 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a second embodiment of the present invention. The description of each member also shown in the first embodiment will be omitted. -
Potential transfer circuits power supply line 203 and apower supply line 200, between the test-usepower supply line 203 and apower supply line 201 and between the test-usepower supply line 203 and apower supply lines 202, respectively. Thepotential transfer circuits circuits potential transfer circuits use ground line 213 and aground line 210, between the test-use ground line 213 and aground line 211 and between the test-use ground line 213 and aground line 212, respectively. Thepotential transfer circuits circuits NMOS switch circuits control use pad 350 provided in aconduction control circuit 600. By supplying a potential of a H level or a L level to the conductioncontrol use pad 350, each of theswitch circuits control use pad 350 is connected to one of theground lines down resistor 800. - Next, the operation of the semiconductor integrated
circuit 10 having the configuration ofFIG. 2 will be described. In wafer level burn-in or probe testing, a potential at which each of theswitch circuits control use pad 350, so that a conduction state is achieved between thepower supply lines ground lines power supply pad 303 to thepower supply lines switch circuits use ground pad 313 to theground lines switch circuits power supply pad 303, the test-use ground pad 313 and the conductioncontrol use pad 350 are required. In this case, as in the first embodiment, an amount of power supply voltage drop and an amount of ground potential rise generated by the switch circuits are corrected by adjusting respective transistor sizes of theNMOS switch circuits power supply pad 303, the test-use ground pad 313 and the conductioncontrol use pad 350. Moreover, because independent power supply systems are necessary in actual use, the conductioncontrol use pad 350 is connected to theground line 211 via the pull-down resistor 800 and, unless a potential is externally supplied to the conductioncontrol use pad 350, the conductioncontrol use pad 350 is controlled to have a potential at which each of theswitch circuits - According to the second embodiment, compared to the first embodiment, the number of probes is increased. However, in contrast to the first embodiment in which diode devices are used and each potential supplied to the circuit blocks 100, 101 and 102 drops or rises by a threshold voltage (Vt) of each of the diode devices with respect to a power potential and a ground potential respectively supplied to the test-use
power supply pad 303 and the test-use ground pad 313, in the second embodiment, a potential is supplied to the conductioncontrol use pad 350 to control each of theswitch circuits - Note that effects of voltage drop can be further reduced by replacing the
NMOS switch circuits control use pad 350 and a gate signal of each of the PMOS switch circuits to control each of the PMOS switch circuits to be in a conduction state or in a non-conduction state with a reverse signal of a signal input from the conductioncontrol use pad 350. Alternatively, instead of the pull-down resistor 800 connected to the conductioncontrol use pad 350, a pull-up resistor (not shown) may be provided to form a configuration in which unless a ground potential is externally supplied to the conductioncontrol use pad 350, each of the PMOS switch circuits are turned to be in a non-conduction state, and thus an inverter circuit (not shown) may be provided between the conductioncontrol use pad 350 and a gate signal of each of theNMOS switch circuits NMOS switch circuits control use pad 350. - In the second embodiment of the present invention shown in
FIG. 2 , as an example, the configuration in which switch circuits are added as thepotential transfer circuits -
FIG. 3 is a block diagram illustrating a configuration of a semiconductor integrated circuit according to a third embodiment of the present invention. Description of each member also shown in the first and second embodiments will be omitted. - A semiconductor integrated
circuit 10 includes a testmode determination pad 351. The testmode determination pad 351 is connected to circuit blocks 100, 101 and 102 through testmode signal lines mode determination pad 351 is connected to any one ofground lines level shifter 810. Thelevel shifter 810 has a configuration including tworesistor devices resistor devices NMOS switch circuits 516, 517 and 518 of thepotential transfer circuits NMOS switch circuits potential transfer circuits mode determination pad 351. - Next, the operation of the semiconductor integrated
circuit 10 having the configuration ofFIG. 3 will be described. When a specific potential is supplied to the testmode determination pad 351, the semiconductor integratedcircuit 10 and the circuit blocks 100, 101 and 102 as its components are set to be in a wafer level burn-in test mode or in an arbitrary test mode through the testmode signal lines mode determination pad 351, each of theNMOS switch circuits potential transfer circuits power supply pad 303 to the circuit blocks 100, 101 and 102. In thelevel shifter 810, a potential is generated by voltage dividing of a potential supplied from the testmode determination pad 351 using the resistance ratio between theresistor devices NMOS switch circuits 516, 517 and 518 constitutingpotential transfer circuits NMOS switch circuits 516, 517 and 518 is turned to be in a conduction state and performs the same operation as that described in the first and second embodiments, so that a ground potential is supplied from a test-use ground pad 313 to the circuit blocks 100, 101 and 102. - In the second embodiment, each of respective transistors of the
potential transfer circuits control use pad 350 to be in a conduction state or in a non-conduction state. However, normally, when wafer level burn-in or probe testing is performed, as described above, it is general that the semiconductor integratedcircuit 10 is set to be in an arbitrary test mode and then testing is performed. In such a case, the semiconductor integratedcircuit 10 is set to be in an arbitrary test mode and thus at least one pad is needed. In the third embodiment, however, using a pad necessary for a certain test mode setting, the transistors of thepotential transfer circuits NMOS switch circuits 516, 517 and 518 constituting thepotential transfer circuits level shifter 810. Thus, respective break-down voltages of theNMOS switch circuits 516, 517 and 518 can be reduced, so that an area of each switch circuit can be effectively reduced. -
FIG. 4 is a block diagram illustrating a configuration of a control system forpotential transfer circuits - The potential transfer circuit 460 includes a
parallel switch circuit 520 which includes twoNMOS switch circuits power supply line 203 and apower supply line 200. One of the two switch circuits of theparallel switch circuit 520, i.e., theswitch circuit 521 has a gate directly connected to aconduction control circuit 600 and the other one, i.e., theswitch circuit 522 is connected to theconduction control circuit 600 and a potentialchange control circuit 610 via an ANDcircuit 523. Theconduction control circuit 600 includes a conductioncontrol signal decoder 550 and is connected so as to receive a signal output from aregister 552 provided in the semiconductor integrated circuit and then output a conduction control signal to thepotential transfer circuits change control circuit 610 includes a potential changecontrol signal decoder 551 for decoding an output of theregister 552. An output signal of the potential changecontrol signal decoder 551 is connected to thepotential transfer circuits FIG. 4 , for the purpose of simplification, only the configuration of the potential transfer circuit 460 is illustrated. However, each of thepotential transfer circuits - Next, the operation of the semiconductor integrated circuit having the configuration of
FIG. 4 will be described. When an instruction for executing conduction control for thepotential transfer circuits register 552, according to the instruction, thedecoder 550 in theconduction control circuit 600 outputs a conduction control signal to thepotential transfer circuits potential transfer circuits conduction control circuit 600, at least theNMOS switch circuit 521 in theparallel switch circuit 520 is turned to be in a conduction state and performs the same operation as that described in the third embodiment to supply a power potential to the circuit blocks 100, 101 and 102 (not shown) from a test-usepower supply pad 303. - The
register 552 has the function of storing an instruction for executing control over the number of switch circuits to be turned in a conduction state in theparallel switch circuit 520 in each of thepotential transfer circuits NMOS switch circuits parallel switch circuit 520 in the potential transfer circuit 460 are turned to be in a conduction state is stored in theregister 552, thedecoder 551 in the potentialchange control circuit 610 transfers a H level signal to the potential transfer circuit 460 according to an output of theregister 552. In the potential transfer circuit 460, the ANDcircuit 523 is activated by the H level signal output by the potential changecontrol signal decoder 551 and each of theswitch circuits parallel switch circuit 520 is controlled to be in a conduction state. As a result, theparallel switch circuit 520 is controlled so that the twoswitch circuits power supply line 200 from a test-usepower supply pad 303 via the twoswitch circuits switch circuits parallel switch circuit 520 can be halved and thus a voltage drop can be halved. - In the semiconductor integrated circuit having the configuration of
FIG. 4 , even when an amount of a current consumed by each of the plurality of circuit blocks 100, 101 and 102 is uncertain in advance, an ON resistance can be selectively controlled to be half by giving an instruction to theregister 552 according to the amount of current consumption. Accordingly, it becomes possible to give flexibility to specification determination and design constraints and also, at the same time, to maintain voltage uniformity in the semiconductor integrated circuit. - Note that in
FIG. 4 , theparallel switch circuit 520 is configured to include the twoNMOS switch circuits parallel switch circuit 520 may include an arbitrary number of NMOS switch circuits. As described above, each switch circuit may be formed of a PMOS transistor. - Moreover, in
FIG. 4 , theconduction control circuit 600 generates a conduction control signal by thedecoder 550. However, as shown inFIG. 5 , even when the conductioncontrol use pad 350 described in the second embodiment or the testmode determination pad 351 described in the third embodiment is used, the same effects can be achieved. Furthermore, in the potentialchange control circuit 610, instead of thedecoder 551, as shown inFIG. 5 , externalchange control pads change control pads FIG. 4 , a voltage drop amount is controlled by theparallel switch circuit 520. However, as further shown inFIG. 5 , avoltage conversion circuit 560 such as a regulator and the like may be provided to control a voltage drop amount in thevoltage conversion circuit 560 according to an output of the potentialchange control circuit 610. - Furthermore, in
FIG. 4 andFIG. 5 , the configurations and operations of thepotential transfer circuits power supply line 203 and thepower supply line 200, between the test-usepower supply line 203 and thepower supply line 201 and between the test-usepower supply line 203 and thepower supply line 202, respectively, have been described. However, in thepotential transfer circuits use ground line 213 and theground line 210, between the test-use ground line 213 and theground line 211 and between the test-use ground line 213 and theground lines 212, respectively, an amount of a ground potential rise can be controlled by the same configurations and operations as those described inFIG. 4 andFIG. 5 . -
FIG. 6 is a block diagram illustrating a configuration of a control system forpotential transfer circuits - A conduction
selection control circuit 620 includes acounter 553 and a conduction selectioncontrol signal decoder 554. The conduction selectioncontrol signal decoder 554 is connected so as to transfer a conduction selection control signal to each of thepotential transfer circuits counter 553. Each of thepotential transfer circuits control signal decoder 554 and a conduction control signal output from aconduction control circuit 600. Each of thepotential transfer circuits - Next, the operation of the semiconductor integrated circuit having the configuration of
FIG. 6 will be described. Thecounter 553 in the conductionselection control circuit 620 updates a count value according to an external clock or a count up (down) signal replacing the external clock signal. When thecounter 553 outputs a predetermined, desired value, the conduction selectioncontrol signal decoder 554 outputs a conduction selection control signal to one of thepotential transfer circuits decoder 554. - Each of the
potential transfer circuits selection control circuit 620 and a conduction control signal is output by theconduction control circuit 600. Accordingly, every time when thecounter 553 updates its count value, a potential transfer circuit which is to be controlled in a conduction state is changed according to the count value and a circuit block to which a power supply potential is supplied from the test-usepower supply pad 303 is changed. - In the semiconductor integrated circuit having the configuration of
FIG. 6 , when a current consumed in performing wafer level burn-in or probe testing exceeds a current tolerance of the testing equipment, probe or test-usepower supply pad 303, an amount of a current flowing in the test-usepower supply pad 303 can be reduced by performing time sharing control to the operation of each of thepotential transfer circuits - Note that in
FIG. 6 , as a component of the conductionselection control circuit 620, thecounter 553 is used. However, instead of thecounter 553, a register can be provided. A potential transfer circuit which is to be controlled in a conduction state can be changed by generating a conduction selection control signal in thedecoder 554 according to an updated output of the register. Moreover, as shown inFIG. 7 , within an allowable range of the number of probes,external selection pads selection control circuit 620 so that a conduction selection control signal is directly supplied from theexternal selection pads counter 553 and thedecoder 554 can be also reduced. - Note that in
FIG. 6 andFIG. 7 , the configuration and operation for thepotential transfer circuits power supply line 203 and thepower supply line 200, between the test-usepower supply line 203 and thepower supply line 201 and between the test-usepower supply line 203 and thepower supply line 202, respectively, have been described. However, in thepotential transfer circuits use ground line 213 and theground line 210, between the test-use ground line 213 and theground line 211 and between the test-use ground line 213 and the test-use ground line 212, respectively, an amount of a current flowing in the test-use ground pad 313 can be controlled by the same configurations and operations as those described inFIG. 6 andFIG. 7 . - As has been described, in a semiconductor device according to the present invention, highly precise wafer level burn-in and simultaneous multiple probe testing can be performed. Therefore, the semiconductor device of the present invention is useful as a semiconductor integrated circuit and the like with an increased degree of integration.
Claims (17)
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JP2006-046368 | 2006-02-23 | ||
JP2006046368A JP4623659B2 (en) | 2006-02-23 | 2006-02-23 | Semiconductor device |
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US20070205794A1 true US20070205794A1 (en) | 2007-09-06 |
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US20100308472A1 (en) * | 2007-11-06 | 2010-12-09 | Silicon Works Co., Ltd | Semiconductor chip having power supply line with minimized voltage drop |
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JP2009130310A (en) * | 2007-11-28 | 2009-06-11 | Elpida Memory Inc | Semiconductor integrated circuit |
JP2012007978A (en) * | 2010-06-24 | 2012-01-12 | On Semiconductor Trading Ltd | Semiconductor integrated circuit |
US8823405B1 (en) * | 2010-09-10 | 2014-09-02 | Xilinx, Inc. | Integrated circuit with power gating |
CN102184270A (en) * | 2010-11-24 | 2011-09-14 | 天津蓝海微科技有限公司 | Automatic generation method for layout protection circuit of safety chip |
US9379029B2 (en) | 2012-07-18 | 2016-06-28 | Toyota Jidosha Kabushiki Kaisha | Inspection apparatus, inspection system, inspection method of semiconductor devices, and manufacturing method of inspected semiconductor devices |
KR102282886B1 (en) * | 2017-02-20 | 2021-07-27 | 신덴겐코교 가부시키가이샤 | Electronic devices and connectors |
US10668551B2 (en) * | 2017-12-21 | 2020-06-02 | Lincoln Global, Inc. | High reliability modular welding power supply system |
US10529438B2 (en) * | 2018-04-17 | 2020-01-07 | Nanya Technology Corporation | DRAM and method of designing the same |
CN112103203B (en) * | 2020-11-10 | 2021-02-23 | 晶芯成(北京)科技有限公司 | Semiconductor test structure, forming method thereof and test method of semiconductor device |
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JP2007227591A (en) | 2007-09-06 |
JP4623659B2 (en) | 2011-02-02 |
US7256604B1 (en) | 2007-08-14 |
CN101026156A (en) | 2007-08-29 |
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