US20070113976A1 - Plasma chamber wall segment temperature control - Google Patents
Plasma chamber wall segment temperature control Download PDFInfo
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- US20070113976A1 US20070113976A1 US11/654,568 US65456807A US2007113976A1 US 20070113976 A1 US20070113976 A1 US 20070113976A1 US 65456807 A US65456807 A US 65456807A US 2007113976 A1 US2007113976 A1 US 2007113976A1
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- 230000008569 process Effects 0.000 abstract description 21
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- 230000001276 controlling effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000012809 cooling fluid Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
- G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
- G05D23/1932—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces
- G05D23/1934—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces each space being provided with one sensor acting on one or more control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Definitions
- the invention relates in general to plasma chambers and, more particularly, to a plasma chamber that has a wall temperature control system.
- Plasma chambers may be used to contain plasma, for example, in a plasma semiconductor substrate processing tool.
- plasma ions are accelerated toward a semiconductor substrate within the plasma chamber.
- ions, neutral particles, and contaminants are pumped out of the chamber while fresh gas is supplied and formed into plasma.
- the chamber wall temperature affects the local surface chemistry, e.g. the nature and amounts of different chemical species adsorbed and emitted from the walls. These species in turn affect the local gas phase chemistry in the plasma, and thus the plasma process result, e.g. rate, selectivity, etc.
- the present invention provides an apparatus and a method of independently controlling the temperature of different segments of the plasma chamber inside wall, and/or other surfaces exposed to the chamber plasma.
- the temperature of segments of the plasma chamber inside walls and other surfaces are independently controlled by a plurality of temperature control systems.
- FIG. 1 is a schematic representation of two segments of the plasma chamber wall temperature control system
- FIG. 2 is a graph showing a temperature distribution along the chamber wall of FIG. 1 ;
- FIG. 3 is a schematic representation of a fluid circulation system used to feed cooling or heating fluid to the plasma chamber wall temperature control segments;
- FIG. 4 is a schematic representation of a fluid circulation system used to feed cooling fluid to the plasma chamber wall temperature control segments.
- FIG. 5 is an overhead view of a plasma chamber utilizing the plasma chamber wall temperature control system illustrated in FIG. 1 ;
- FIG. 1 shows the structure of two segments of the plasma wall temperature control system.
- the inside of the plasma chamber is defined by a plasma chamber inside wall, indicated at 10 .
- At least an inner portion of the plasma chamber inside wall 10 may be made of a ceramic-type material, which typically has a low thermal conductivity, such as quartz, alumina, yttria, etc. Materials of low thermal conductivity allow improved independent temperature control of various segments of the plasma chamber inside wall 10 . Materials with a higher thermal conductivity, such as anodized aluminum, stainless steel, or the like can also be used.
- a thermal conductor, indicated at 12 is seated in thermal contact with the back side of a segment of the plasma chamber inside wall 10 .
- the thermal conductor 12 may be made of a material with a high thermal conductivity, for example a metal such as aluminum.
- the left and right segments of the plasma wall temperature control system shown in FIG. 1 each contain a thermal conductor 12 .
- Each thermal conductor 12 controls the temperature of a segment of the plasma chamber inside wall 10 .
- Each thermal conductor 12 is in direct contact with either a thermoelectric device, indicated at 20 , or a “dummy” insert, indicated at 16 . Referring to the left segment, the thermal conductor 12 is in direct contact with the thermoelectric device 20 .
- the thermal conductor 12 is in direct contact with a dummy insert 16 .
- the dummy insert 16 in the segment of the plasma wall temperature control system without the thermoelectric device 20 mimics the thermal properties, e.g. nominal heat conductance, of the thermoelectric device 20 .
- Temperature controlling block 14 has a conduit, indicated at 18 , to carry a fluid.
- the thermoelectric device 20 is in direct contact with the temperature controlling block 14 .
- the fluid in the conduit 18 of the temperature controlling block 14 can either heat or cool the segment of the plasma chamber inside wall 10 , depending on the fluid temperature. Heating or cooling is by direct thermal conduction, from the fluid to the segment of the plasma chamber inside wall 10 , via the conduit 18 of the temperature controlling block 14 , dummy insert 16 or thermoelectric device 20 , and thermal conductor 12 .
- the thermoelectric device 20 can allow higher precision and generally faster response temperature control of the segment of the plasma chamber inside wall 10 , by varying the current and voltage supplied to the thermoelectric device 20 by a variable DC power source (not illustrated).
- Thermocouples 22 and 24 determine the temperatures on both sides of the thermoelectric device 20 .
- the thermoelectric device 20 can be disconnected from the DC power source so that the voltage and current into the known load of the thermoelectric device 20 can be used to determine the heat flow through it.
- Heat flow information can be used for plasma chamber process control. If higher resolution temperature control is required, all temperature control segments may have thermoelectric devices 20 installed. If only measurement of heat flow is required, not all temperature control segments may have thermoelectric devices 20 installed.
- a layer of heat insulation material prevents heat exchange between temperature controlling blocks 14 via the plasma chamber outside wall, indicated at 28 . Segments of the plasma wall temperature control system are spaced apart so that they do not touch each other, preventing heat exchange via direct thermal conduction.
- the insulation 26 acts to hold the temperature control systems against the outside surface of chamber inside wall 10 . If other means of holding temperature control systems against wall 10 are used, insulators 26 may be omitted, and the gas that fills the space between walls 10 and 28 then provides the insulation.
- RF shielding of the plasma chamber may be included, depending on the type of plasma generator used.
- a thin metal foil, indicated at 30 bridges the space between the thermal conductors 12 . Heat exchange between conductors 12 is minimized because the foil 30 is thin.
- the foil 30 completes an electrically continuous RF energy shield around the plasma chamber.
- FIG. 2 shows a graph exemplifying an achievable temperature distribution along the plasma chamber inside wall 10 .
- the sharp temperature step, indicated at 40 between the two segments of the plasma chamber inside wall 10 , is partly achievable due to the low thermal conductivity of the material, partly due to small thickness of the plasma chamber inside wall 10 .
- FIG. 3 shows a fluid circulation system used to supply heating or cooling fluid to the conduits 18 of the temperature controlling blocks 14 of the plasma wall temperature control system.
- Two high-flow fluid sources can be used.
- a higher-temperature fluid source, indicated at 50 provides a fluid of as high or higher temperature than the highest required temperature of any plasma chamber process.
- a lower-temperature fluid source, indicated at 52 provides a fluid of as low or lower temperature than the lowest required temperature of any plasma chamber process.
- a selector valve selectively sends either higher-temperature or lower-temperature fluid to the conduit 18 . Varying which fluid is sent allows control of the temperature of the plasma chamber inside wall 10 .
- the selector valves 54 and 56 are located near the conduits 18 , reducing the amount of fluid needing replacement when a temperature change is needed.
- the thermoelectric devices 20 provide higher precision temperature control, and can sustain a temperature difference of, for example, a few tens of degrees.
- the temperature difference can compensate for a fluid that does not yet have the exact desired temperature necessary for the plasma chamber process.
- the thermoelectric devices are provided with varying current and voltage to compensate for or sustain any temperature differences required for wall segment temperature control.
- the thermoelectric devices are also able to adjust their temperatures more rapidly than the fluid system.
- a fluid source 50 or 52 may be put in a bypass position via a relief valve, indicated at 58 .
- the bypassed fluid circulates through the fluid circulation system, always ready for the next temperature change.
- the selector valve 54 may be a liquid mixing valve, allowing selective combination of the heating and cooling fluids to set the fluid at a desired temperature for steady state conditions, or heating only or cooling only, for quick heating or cooling.
- a further embodiment eliminates the heating fluid 50 and selector valves 54 and 56 from the fluid circulation system by using resistive heaters (which may also be the same device as the thermoelectric device 20 ) for heating.
- FIG. 4 shows the simplified cooling fluid circulation system.
- On-off valves (which may also be the same valve as the relief valve 58 ) can be used in the simplified cooling fluid circulation system. This embodiment can provide a highly controlled heat-up process, via current and voltage supplied to the resistive heater.
- the temperature and heat flow measured by the thermocouples 22 , 24 and the thermoelectric devices 20 can be used in a feedback control system to maintain a desired plasma chamber inside wall temperature over each segment of the chamber wall 10 .
- the temperature and heat flow can also be used to monitor the plasma process being carried out in the plasma chamber.
- Plasma processing can be controlled based on the feedback from the temperature and heat flow information.
- the temperature of a portion of the wall can be measured and correlated to parameters of the plasma process.
- the parameters of the plasma process can then be adjusted as necessary by adjusting the temperature control systems.
- FIG. 5 shows the segments of the plasma wall temperature control system arranged to surround the plasma chamber 60 .
- the wall temperature distribution can be correlated to the process properties, such as etch rate, selectivity, device damage, repeatability, etc., via a design-of-experiments (DOE) approach, in which a large number of tests are made, so that a meaningful correlation is obtained.
- DOE design-of-experiments
- This correlation may be programmed in the form of a look-up table database in the tool controller.
- an estimate of the achievable process results can be obtained using various methods known in the art. If this uniformity is not satisfactory, then a control signal is sent to all segments to adjust their temperatures to a setpoint where the desired process results are obtained, in combination, of course, with other operating parameters of the current process in the tool.
- the heat flux information is useful for quantifying the plasma bombardment of the wall.
- a high heat flux means that the wall is subjected to a high ion bombardment flux, which invariably causes sputtering of the wall material. This can contaminate the process and reduce the lifetime of the chamber wall, increasing costs. If a particularly “clean” process needs to be achieved, then the heat flux information can be used to adjust process parameters so that wall bombardment is minimized.
- the system may be used, for example, to reduce the time necessary between process steps.
- the chamber may be cleaned at a temperature higher than the wafer process.
- the system according to the present invention allows rapid chamber heating so that throughput may be increased.
- the same segmented temperature control system may be used on the substrate holder assembly, the gas injection plate, and in other locations in the chamber where precise wall temperature control is required for good process results.
Abstract
A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.
Description
- This is a divisional application of U.S. patent application Ser. No. 10/765,445, filed on Jan. 28, 2004 (Issue Fee Paid), which is a continuation of International Application No. PCT/US02/23207, filed on Jul. 19, 2002, which, in turn, claims the benefit from U.S. Provisional Patent Application No. 60/308,447, filed Jul. 30, 2001, the entire contents of all of which are incorporated herein by reference in their entireties.
- 1. Field of the Invention
- The invention relates in general to plasma chambers and, more particularly, to a plasma chamber that has a wall temperature control system.
- 2. Description of Related Art
- Plasma chambers may be used to contain plasma, for example, in a plasma semiconductor substrate processing tool. Typically, plasma ions are accelerated toward a semiconductor substrate within the plasma chamber. During the course of the process, ions, neutral particles, and contaminants are pumped out of the chamber while fresh gas is supplied and formed into plasma.
- The chamber wall temperature affects the local surface chemistry, e.g. the nature and amounts of different chemical species adsorbed and emitted from the walls. These species in turn affect the local gas phase chemistry in the plasma, and thus the plasma process result, e.g. rate, selectivity, etc.
- With the current trend of introducing in-situ chamber cleaning steps between wafer batches, fast ramp-up and ramp-down of wall temperatures can be advantageous.
- The present invention provides an apparatus and a method of independently controlling the temperature of different segments of the plasma chamber inside wall, and/or other surfaces exposed to the chamber plasma. The temperature of segments of the plasma chamber inside walls and other surfaces are independently controlled by a plurality of temperature control systems.
-
FIG. 1 is a schematic representation of two segments of the plasma chamber wall temperature control system; -
FIG. 2 is a graph showing a temperature distribution along the chamber wall ofFIG. 1 ; -
FIG. 3 is a schematic representation of a fluid circulation system used to feed cooling or heating fluid to the plasma chamber wall temperature control segments; -
FIG. 4 is a schematic representation of a fluid circulation system used to feed cooling fluid to the plasma chamber wall temperature control segments. -
FIG. 5 is an overhead view of a plasma chamber utilizing the plasma chamber wall temperature control system illustrated inFIG. 1 ; -
FIG. 1 shows the structure of two segments of the plasma wall temperature control system. The inside of the plasma chamber is defined by a plasma chamber inside wall, indicated at 10. At least an inner portion of the plasma chamber insidewall 10 may be made of a ceramic-type material, which typically has a low thermal conductivity, such as quartz, alumina, yttria, etc. Materials of low thermal conductivity allow improved independent temperature control of various segments of the plasma chamber insidewall 10. Materials with a higher thermal conductivity, such as anodized aluminum, stainless steel, or the like can also be used. - A thermal conductor, indicated at 12, is seated in thermal contact with the back side of a segment of the plasma chamber inside
wall 10. Thethermal conductor 12 may be made of a material with a high thermal conductivity, for example a metal such as aluminum. The left and right segments of the plasma wall temperature control system shown inFIG. 1 each contain athermal conductor 12. Eachthermal conductor 12 controls the temperature of a segment of the plasma chamber insidewall 10. Eachthermal conductor 12 is in direct contact with either a thermoelectric device, indicated at 20, or a “dummy” insert, indicated at 16. Referring to the left segment, thethermal conductor 12 is in direct contact with thethermoelectric device 20. Referring to the right segment, thethermal conductor 12 is in direct contact with adummy insert 16. The dummy insert 16 in the segment of the plasma wall temperature control system without thethermoelectric device 20 mimics the thermal properties, e.g. nominal heat conductance, of thethermoelectric device 20. - Referring to the right segment of
FIG. 1 , thedummy insert 16 is in direct contact with a temperature controlling block, indicated at 14.Temperature controlling block 14 has a conduit, indicated at 18, to carry a fluid. For those segments that contain athermoelectric device 20, thethermoelectric device 20 is in direct contact with thetemperature controlling block 14. The fluid in theconduit 18 of thetemperature controlling block 14 can either heat or cool the segment of the plasma chamber insidewall 10, depending on the fluid temperature. Heating or cooling is by direct thermal conduction, from the fluid to the segment of the plasma chamber insidewall 10, via theconduit 18 of thetemperature controlling block 14,dummy insert 16 orthermoelectric device 20, andthermal conductor 12. Thethermoelectric device 20 can allow higher precision and generally faster response temperature control of the segment of the plasma chamber insidewall 10, by varying the current and voltage supplied to thethermoelectric device 20 by a variable DC power source (not illustrated). -
Thermocouples thermoelectric device 20. Thethermoelectric device 20 can be disconnected from the DC power source so that the voltage and current into the known load of thethermoelectric device 20 can be used to determine the heat flow through it. Heat flow information can be used for plasma chamber process control. If higher resolution temperature control is required, all temperature control segments may havethermoelectric devices 20 installed. If only measurement of heat flow is required, not all temperature control segments may havethermoelectric devices 20 installed. - A layer of heat insulation material, indicated at 26, prevents heat exchange between
temperature controlling blocks 14 via the plasma chamber outside wall, indicated at 28. Segments of the plasma wall temperature control system are spaced apart so that they do not touch each other, preventing heat exchange via direct thermal conduction. Theinsulation 26 acts to hold the temperature control systems against the outside surface of chamber insidewall 10. If other means of holding temperature control systems againstwall 10 are used,insulators 26 may be omitted, and the gas that fills the space betweenwalls - RF shielding of the plasma chamber may be included, depending on the type of plasma generator used. A thin metal foil, indicated at 30, bridges the space between the
thermal conductors 12. Heat exchange betweenconductors 12 is minimized because thefoil 30 is thin. Thefoil 30 completes an electrically continuous RF energy shield around the plasma chamber. -
FIG. 2 shows a graph exemplifying an achievable temperature distribution along the plasma chamber insidewall 10. The sharp temperature step, indicated at 40, between the two segments of the plasma chamber insidewall 10, is partly achievable due to the low thermal conductivity of the material, partly due to small thickness of the plasma chamber insidewall 10. -
FIG. 3 shows a fluid circulation system used to supply heating or cooling fluid to theconduits 18 of the temperature controllingblocks 14 of the plasma wall temperature control system. Two high-flow fluid sources can be used. A higher-temperature fluid source, indicated at 50, provides a fluid of as high or higher temperature than the highest required temperature of any plasma chamber process. A lower-temperature fluid source, indicated at 52, provides a fluid of as low or lower temperature than the lowest required temperature of any plasma chamber process. - A selector valve, indicated at 54, selectively sends either higher-temperature or lower-temperature fluid to the
conduit 18. Varying which fluid is sent allows control of the temperature of the plasma chamber insidewall 10. Theselector valves conduits 18, reducing the amount of fluid needing replacement when a temperature change is needed. - The
thermoelectric devices 20 provide higher precision temperature control, and can sustain a temperature difference of, for example, a few tens of degrees. The temperature difference can compensate for a fluid that does not yet have the exact desired temperature necessary for the plasma chamber process. The thermoelectric devices are provided with varying current and voltage to compensate for or sustain any temperature differences required for wall segment temperature control. The thermoelectric devices are also able to adjust their temperatures more rapidly than the fluid system. - If a
fluid source selector valve 54 may be a liquid mixing valve, allowing selective combination of the heating and cooling fluids to set the fluid at a desired temperature for steady state conditions, or heating only or cooling only, for quick heating or cooling. A further embodiment eliminates theheating fluid 50 andselector valves FIG. 4 shows the simplified cooling fluid circulation system. On-off valves (which may also be the same valve as the relief valve 58) can be used in the simplified cooling fluid circulation system. This embodiment can provide a highly controlled heat-up process, via current and voltage supplied to the resistive heater. - The temperature and heat flow measured by the
thermocouples thermoelectric devices 20 can be used in a feedback control system to maintain a desired plasma chamber inside wall temperature over each segment of thechamber wall 10. The temperature and heat flow can also be used to monitor the plasma process being carried out in the plasma chamber. Plasma processing can be controlled based on the feedback from the temperature and heat flow information. The temperature of a portion of the wall can be measured and correlated to parameters of the plasma process. The parameters of the plasma process can then be adjusted as necessary by adjusting the temperature control systems.FIG. 5 shows the segments of the plasma wall temperature control system arranged to surround theplasma chamber 60. - The wall temperature distribution can be correlated to the process properties, such as etch rate, selectivity, device damage, repeatability, etc., via a design-of-experiments (DOE) approach, in which a large number of tests are made, so that a meaningful correlation is obtained. This correlation may be programmed in the form of a look-up table database in the tool controller. Then, during a process, when a temperature distribution on the wall is known from measurements at each individual segment, an estimate of the achievable process results can be obtained using various methods known in the art. If this uniformity is not satisfactory, then a control signal is sent to all segments to adjust their temperatures to a setpoint where the desired process results are obtained, in combination, of course, with other operating parameters of the current process in the tool. With all segments individually controllable, one can also achieve azimuthal process results control. The heat flux information is useful for quantifying the plasma bombardment of the wall. A high heat flux means that the wall is subjected to a high ion bombardment flux, which invariably causes sputtering of the wall material. This can contaminate the process and reduce the lifetime of the chamber wall, increasing costs. If a particularly “clean” process needs to be achieved, then the heat flux information can be used to adjust process parameters so that wall bombardment is minimized.
- Likewise, the system may be used, for example, to reduce the time necessary between process steps. For example, between wafers, the chamber may be cleaned at a temperature higher than the wafer process. The system according to the present invention allows rapid chamber heating so that throughput may be increased.
- The same segmented temperature control system may be used on the substrate holder assembly, the gas injection plate, and in other locations in the chamber where precise wall temperature control is required for good process results.
- It will thus be seen that the objects of this invention have been fully and effectively accomplished. It will be realized, however, that the foregoing preferred specific embodiments have been shown and described for the purpose of illustrating the functional and structural principles of this invention and are subject to change without departure from such principles. Therefore, this invention includes all modifications encompassed within the spirit and scope of the following claims.
Claims (1)
1. A plasma chamber temperature control, for use with a plasma chamber having a wall or other surfaces exposed to the plasma, comprising:
a plurality of temperature control systems disposed in thermal communication with the plasma chamber wall or the other surfaces, each temperature control system being independently controllable.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/654,568 US20070113976A1 (en) | 2001-07-30 | 2007-01-18 | Plasma chamber wall segment temperature control |
Applications Claiming Priority (4)
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US30844701P | 2001-07-30 | 2001-07-30 | |
PCT/US2002/023207 WO2003012567A1 (en) | 2001-07-30 | 2002-07-19 | Plasma chamber wall segment temperature control |
US10/765,445 US7186313B2 (en) | 2001-07-30 | 2004-01-28 | Plasma chamber wall segment temperature control |
US11/654,568 US20070113976A1 (en) | 2001-07-30 | 2007-01-18 | Plasma chamber wall segment temperature control |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/765,445 Division US7186313B2 (en) | 2001-07-30 | 2004-01-28 | Plasma chamber wall segment temperature control |
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US20070113976A1 true US20070113976A1 (en) | 2007-05-24 |
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US10/765,445 Expired - Fee Related US7186313B2 (en) | 2001-07-30 | 2004-01-28 | Plasma chamber wall segment temperature control |
US11/654,564 Abandoned US20070131650A1 (en) | 2001-07-30 | 2007-01-18 | Plasma chamber wall segment temperature control |
US11/654,669 Abandoned US20070114206A1 (en) | 2001-07-30 | 2007-01-18 | Plasma chamber wall segment temperature control |
US11/654,568 Abandoned US20070113976A1 (en) | 2001-07-30 | 2007-01-18 | Plasma chamber wall segment temperature control |
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US10/765,445 Expired - Fee Related US7186313B2 (en) | 2001-07-30 | 2004-01-28 | Plasma chamber wall segment temperature control |
US11/654,564 Abandoned US20070131650A1 (en) | 2001-07-30 | 2007-01-18 | Plasma chamber wall segment temperature control |
US11/654,669 Abandoned US20070114206A1 (en) | 2001-07-30 | 2007-01-18 | Plasma chamber wall segment temperature control |
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WO (1) | WO2003012567A1 (en) |
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US7358192B2 (en) * | 2004-04-08 | 2008-04-15 | Applied Materials, Inc. | Method and apparatus for in-situ film stack processing |
US20050229854A1 (en) * | 2004-04-15 | 2005-10-20 | Tokyo Electron Limited | Method and apparatus for temperature change and control |
MY151524A (en) * | 2006-03-20 | 2014-05-30 | Temptronic Corp | Temperature-controlled enclosures and temperature control system using the same |
US7867403B2 (en) * | 2006-06-05 | 2011-01-11 | Jason Plumhoff | Temperature control method for photolithographic substrate |
US8642974B2 (en) * | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
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JP5734081B2 (en) * | 2010-10-18 | 2015-06-10 | 株式会社日立国際電気 | Substrate processing apparatus, temperature control method for substrate processing apparatus, and heating method for substrate processing apparatus |
CN103209635B (en) | 2010-11-23 | 2016-08-10 | 皇家飞利浦电子股份有限公司 | For the respiratory activity of object being carried out the breathing pacing system and method for pacing |
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2002
- 2002-07-19 WO PCT/US2002/023207 patent/WO2003012567A1/en not_active Application Discontinuation
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2004
- 2004-01-28 US US10/765,445 patent/US7186313B2/en not_active Expired - Fee Related
-
2007
- 2007-01-18 US US11/654,564 patent/US20070131650A1/en not_active Abandoned
- 2007-01-18 US US11/654,669 patent/US20070114206A1/en not_active Abandoned
- 2007-01-18 US US11/654,568 patent/US20070113976A1/en not_active Abandoned
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US5477975A (en) * | 1993-10-15 | 1995-12-26 | Applied Materials Inc | Plasma etch apparatus with heated scavenging surfaces |
US6113732A (en) * | 1996-03-18 | 2000-09-05 | Canon Kabushiki Kaisha | Deposited film forming apparatus |
Also Published As
Publication number | Publication date |
---|---|
US7186313B2 (en) | 2007-03-06 |
US20070114206A1 (en) | 2007-05-24 |
US20070131650A1 (en) | 2007-06-14 |
US20040211660A1 (en) | 2004-10-28 |
WO2003012567A1 (en) | 2003-02-13 |
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Owner name: TOKYO ELECTRON LIMITED, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MITROVIC, ANDREJ S.;LONG, MAOLIN;MOROZ, PAUL;AND OTHERS;REEL/FRAME:018813/0408;SIGNING DATES FROM 20040115 TO 20040312 |
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STCB | Information on status: application discontinuation |
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