US20070089564A1 - Metal nanowire array and method for fabricating the same - Google Patents

Metal nanowire array and method for fabricating the same Download PDF

Info

Publication number
US20070089564A1
US20070089564A1 US11/432,995 US43299506A US2007089564A1 US 20070089564 A1 US20070089564 A1 US 20070089564A1 US 43299506 A US43299506 A US 43299506A US 2007089564 A1 US2007089564 A1 US 2007089564A1
Authority
US
United States
Prior art keywords
metal
array
nanocrystals
carbon nanotube
metal nanowire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/432,995
Inventor
Tsai-Shih Tung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hon Hai Precision Industry Co Ltd
Original Assignee
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Precision Industry Co Ltd filed Critical Hon Hai Precision Industry Co Ltd
Assigned to HON HAI PRECISION INDUSTRY CO., LTD reassignment HON HAI PRECISION INDUSTRY CO., LTD ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TUNG, TSAI-SHIH
Publication of US20070089564A1 publication Critical patent/US20070089564A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05Metallic powder characterised by the size or surface area of the particles
    • B22F1/054Nanosized particles
    • B22F1/0547Nanofibres or nanotubes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/18Non-metallic particles coated with metal
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B5/00Single-crystal growth from gels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10Processes characterised by the sequence of their steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068Formation and after-treatment of conductors
    • H01L2221/1094Conducting structures comprising nanotubes or nanowires

Definitions

  • the present invention relates generally to nanomaterials, and more particularly to a metal nanowire array and a method for fabricating the same.
  • An alternative technology is the “bottom-up” assembly of integrated arrays of nanometer-scaled circuits from metal and semiconductor nanocrystals.
  • three key objectives must be accomplished. The first is the self-assembly of nanometer-scaled structures from nanocrystals dispersed in colloidal solution. The second is the self-organization of these structures on technologically relevant substrates. The third is the processing of these organized nanocrystal assemblies into robust structures suitable for practical applications.
  • a metal nanowire array includes an array of metal nanowires extending in a common direction, each metal nanowire including a core portion containing at least one carbon nanotube, and a cladding portion enclosing the core portion therein which includes metal polycrystalline.
  • a method for fabricating a metal nanowire array includes the following steps: providing a carbon nanotube array which includes a number of carbon nanotubes; immersing the carbon nanotube array in a colloidal solution which contains a solvent and a number of metal nanocrystals dispersed in the solvent for self-assembling the metal nanocrystals on exterior surfaces of the carbon nanotubes; taking the carbon nanotube array out of the colloidal solution; and heating the metal nanocrystals on the surfaces of the carbon nanotubes in a manner such that the metal nanocrystals are fused into the metal nanowire array.
  • FIG. 1 is a cross sectional schematic view of a metal nanowire array in accordance with the preferred embodiment
  • FIG. 2 is a flow chart of a method for fabricating a metal nanowire array in accordance with the preferred embodiment.
  • FIGS. 3A-3D are schematic views showing successive stages of the method for fabricating a metal nanowire array in accordance with the preferred embodiment.
  • a metal nanowire array 100 in accordance with the preferred embodiment includes a substrate 110 and an array of metal nanowires 120 extending in a substantially common direction.
  • Each of the metal nanowires 120 includes a core portion 122 and a cladding portion 124 .
  • the core potion 122 is enclosed in the cladding portion 124 .
  • the cladding portion 124 could be partially or entirely formed on/enclosing an exterior surface of the core portion 122 and which should be considered to be within the scope of the present invention.
  • the core portion 122 may include a single carbon nanotube or a plurality of bundled carbon nanotubes.
  • the carbon nanotubes may be formed on the substrate 110 .
  • the cladding portion 124 includes metal polycrystalline, the metal can be selected from the group consisting of gold, silver, copper, tin, nickel, and germanium. Because of the strength of the aligned structure of the metal nanowire array 100 , it is suitable for practical applications.
  • the metal nanowire array 100 can be fabricated by the following method:
  • a method in accordance with the preferred embodiment includes the steps (in no particular order) of:
  • step 210 providing a carbon nanotube array 10 which includes a number of carbon nanotubes 14 ;
  • step 220 immersing the carbon nanotube array 10 in a colloidal solution 20 of metal nanocrystals 24 for self-assembling the metal nanocrystals 24 on exterior surfaces of the carbon nanotubes 14 ;
  • step 230 taking the carbon nanotube array 10 out of the colloidal solution 20 ;
  • step 240 heating the metal nanocrystals assembled on exterior surfaces of the carbon nanotubes 14 to form a continuous polycrystalline metal nanowire array 40 .
  • the carbon nanotube array 10 includes a substrate 12 and a number of carbon nanotubes 14 formed on the substrate 12 .
  • the carbon nanotubes 14 extend in a common direction, e.g. perpendicularly from the substrate.
  • a method for preparing such a carbon nanotube array with well-aligned carbon nanotubes is disclosed, for example, in US patent 20040053053A1 by Jiang, KaiLi. et al, which is incorporated herein by reference.
  • the method includes the following steps: providing a smooth substrate; depositing a metal catalyst layer on a surface of the substrate; heating the treated substrate to a predetermined temperature in flowing protective gas; and introducing a mixture of carbon source gas and protective gas for 5-30 minutes, thus forming a carbon nanotube array extending from the substrate.
  • a patterned carbon nanotube array can be prepared by forming a patterned catalyst layer.
  • the carbon nanotube array 10 is immersed into a colloidal solution 20 of a metal nanocrystals for a period of time.
  • the colloidal solution 20 contains a solvent 22 and a number of metal nanocrystals 24 dispersed in the solvent 22 .
  • the solvent 22 can be selected from the group consisting of water, chloroform, hexylene glycol, and alcohols containing a number of less than 5 carbon atoms (i.e. methanol, ethanol, propanol and butanol).
  • the particle size of the metal nanocrystals 24 is in the range from 1 nanometer to 100 nanometers.
  • the metal nanocrystals can be chosen from the group consisting of gold, silver, copper, tin, nickel, and germanium.
  • the colloidal solution 20 further contains a stabilizer agent, the stabilizer can be selected for the group consisting of: tetraoctyl ammonium bromide, sodium citrate and poly sodium 4-styrene sulphonate.
  • the metal nanocrystals 24 are self-assembled on partial or entire exterior surfaces of the carbon nanotubes 14 .
  • the metal nanocrystals 24 are self-assembled on entire exterior surfaces of the carbon nanotubes 14 .
  • the carbon nanotube array 10 is immersed in the colloidal solution for a time period in the range from 5 to 72 hours, preferably 10 to 30 hours.
  • step 230 the carbon nanotube array 10 is taken out of the colloidal solution 20 .
  • the metal nanocrystals 24 are attached to exterior surfaces of the carbon nanotubes 14 .
  • the metal nanocrystals 24 are independent from each other as sub-monolayer/monolayer at exterior surfaces of the carbon nanotubes 14 fitted to a Langmuir isotherm.
  • the metal nanocrystals 24 attached to exterior surfaces of the carbon nanotubes 14 is heated to a temperature in air for a period of time to form a continuous polycrystalline metal nanowire array.
  • the temperature is equal to or higher than the melting point of the metal nanocrystals.
  • the metal nanocrystals have a melting point lower than bulk metal.
  • surface melting can occur at a lower temperature due to enhanced mobility of metal atoms.
  • the gold nanocrystals attached to the surface of the carbon nanotubes 14 have a melting point of about 300 degree Celsius.
  • the metal nanocrystals 24 are heated for a time period in the range for example from 35 to 60 seconds as in the illustrated embodiment. Referring to FIG. 3D , after the heating step, the neighboring spherical metal nanocrystals are fused together, therefore a polycrystalline metal nanowire array 40 composed of a number of nanowires 30 each having a nanotube core is formed.
  • metal nanowire arrays can be synthesized with the nanotube template.
  • the metal nanowire array is suitable for practical applications, such as sensor, catalyst, and thermal interference material.

Abstract

A method for fabricating a metal nanowire array (30) includes the following steps: providing a carbon nanotube array (10) which includes a number of carbon nanotubes (14), immersing the carbon nanotube array in a colloidal solution (20) which contains a solvent (22) and a number of metal nanocrystals (24) dispersed in the solvent so as to self-assemble the metal nanocrystals on exterior surfaces of the carbon nanotubes; taking the carbon nanotube array out of the colloidal solution; and heating the metal nanocrystals on the surfaces of the carbon nanotubes in a manner such that the metal nanocrystals are fused into a metal nanowire array.

Description

    BACKGROUND
  • 1. Technical Field
  • The present invention relates generally to nanomaterials, and more particularly to a metal nanowire array and a method for fabricating the same.
  • 2. Discussion of Related Art
  • Miniaturization of integrated circuits is necessary for meeting the demand of processing data at higher speeds. Although some existing photolithography based technologies are useful in miniaturization, it is generally recognized that the existing technologies will reach their fundamental limits in the near future because of the wavelengths of the light sources used.
  • An alternative technology is the “bottom-up” assembly of integrated arrays of nanometer-scaled circuits from metal and semiconductor nanocrystals. In respect of this alternative technology, three key objectives must be accomplished. The first is the self-assembly of nanometer-scaled structures from nanocrystals dispersed in colloidal solution. The second is the self-organization of these structures on technologically relevant substrates. The third is the processing of these organized nanocrystal assemblies into robust structures suitable for practical applications.
  • In recent years, some exciting progress toward the first and second objects has been made. However, relatively little progress has been reported in the third area. Accordingly, a metal nanowire array with a robust structure suitable for practical applications and a method of fabricating such a metal nanowire array are desired.
  • SUMMARY
  • In one embodiment, a metal nanowire array includes an array of metal nanowires extending in a common direction, each metal nanowire including a core portion containing at least one carbon nanotube, and a cladding portion enclosing the core portion therein which includes metal polycrystalline.
  • In another embodiment, a method for fabricating a metal nanowire array includes the following steps: providing a carbon nanotube array which includes a number of carbon nanotubes; immersing the carbon nanotube array in a colloidal solution which contains a solvent and a number of metal nanocrystals dispersed in the solvent for self-assembling the metal nanocrystals on exterior surfaces of the carbon nanotubes; taking the carbon nanotube array out of the colloidal solution; and heating the metal nanocrystals on the surfaces of the carbon nanotubes in a manner such that the metal nanocrystals are fused into the metal nanowire array.
  • This and other features and advantages of the present invention as well as the preferred embodiments thereof and a metal nanowire array and techniques for fabricating metal nanowire array in accordance with the invention will become apparent from the following detailed description and the descriptions of the drawings.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • Many aspects of the present metal nanowire array and related manufacture method can be better understood with reference to the following drawings. The components in the drawings are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of the present method. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the several views
  • FIG. 1 is a cross sectional schematic view of a metal nanowire array in accordance with the preferred embodiment;
  • FIG. 2 is a flow chart of a method for fabricating a metal nanowire array in accordance with the preferred embodiment; and
  • FIGS. 3A-3D are schematic views showing successive stages of the method for fabricating a metal nanowire array in accordance with the preferred embodiment.
  • DETAILED DESCRIPTION 0F PREFERRED EMBODIMENTS
  • Referring now to FIG. 1, a metal nanowire array 100 in accordance with the preferred embodiment includes a substrate 110 and an array of metal nanowires 120 extending in a substantially common direction. Each of the metal nanowires 120 includes a core portion 122 and a cladding portion 124. The core potion 122 is enclosed in the cladding portion 124. It should be noted that the cladding portion 124 could be partially or entirely formed on/enclosing an exterior surface of the core portion 122 and which should be considered to be within the scope of the present invention. The core portion 122 may include a single carbon nanotube or a plurality of bundled carbon nanotubes. The carbon nanotubes may be formed on the substrate 110. The cladding portion 124 includes metal polycrystalline, the metal can be selected from the group consisting of gold, silver, copper, tin, nickel, and germanium. Because of the strength of the aligned structure of the metal nanowire array 100, it is suitable for practical applications. The metal nanowire array 100 can be fabricated by the following method:
  • Referring now to FIG. 2, a method in accordance with the preferred embodiment includes the steps (in no particular order) of:
  • step 210: providing a carbon nanotube array 10 which includes a number of carbon nanotubes 14;
  • step 220: immersing the carbon nanotube array 10 in a colloidal solution 20 of metal nanocrystals 24 for self-assembling the metal nanocrystals 24 on exterior surfaces of the carbon nanotubes 14;
  • step 230: taking the carbon nanotube array 10 out of the colloidal solution 20; and
  • step 240: heating the metal nanocrystals assembled on exterior surfaces of the carbon nanotubes 14 to form a continuous polycrystalline metal nanowire array 40.
  • In step 210, referring to FIG. 3A, the carbon nanotube array 10 includes a substrate 12 and a number of carbon nanotubes 14 formed on the substrate 12. The carbon nanotubes 14 extend in a common direction, e.g. perpendicularly from the substrate. A method for preparing such a carbon nanotube array with well-aligned carbon nanotubes is disclosed, for example, in US patent 20040053053A1 by Jiang, KaiLi. et al, which is incorporated herein by reference. The method includes the following steps: providing a smooth substrate; depositing a metal catalyst layer on a surface of the substrate; heating the treated substrate to a predetermined temperature in flowing protective gas; and introducing a mixture of carbon source gas and protective gas for 5-30 minutes, thus forming a carbon nanotube array extending from the substrate. A patterned carbon nanotube array can be prepared by forming a patterned catalyst layer.
  • In step 220, referring to FIG. 3B, the carbon nanotube array 10 is immersed into a colloidal solution 20 of a metal nanocrystals for a period of time. The colloidal solution 20 contains a solvent 22 and a number of metal nanocrystals 24 dispersed in the solvent 22. The solvent 22 can be selected from the group consisting of water, chloroform, hexylene glycol, and alcohols containing a number of less than 5 carbon atoms (i.e. methanol, ethanol, propanol and butanol). The particle size of the metal nanocrystals 24 is in the range from 1 nanometer to 100 nanometers. The metal nanocrystals can be chosen from the group consisting of gold, silver, copper, tin, nickel, and germanium. Preferably the colloidal solution 20 further contains a stabilizer agent, the stabilizer can be selected for the group consisting of: tetraoctyl ammonium bromide, sodium citrate and poly sodium 4-styrene sulphonate. In this step, the metal nanocrystals 24 are self-assembled on partial or entire exterior surfaces of the carbon nanotubes 14. Preferably, the metal nanocrystals 24 are self-assembled on entire exterior surfaces of the carbon nanotubes 14. The carbon nanotube array 10 is immersed in the colloidal solution for a time period in the range from 5 to 72 hours, preferably 10 to 30 hours.
  • In step 230, the carbon nanotube array 10 is taken out of the colloidal solution 20. Referring to FIG. 3C, after the previous self-assembly step, the metal nanocrystals 24 are attached to exterior surfaces of the carbon nanotubes 14. The metal nanocrystals 24 are independent from each other as sub-monolayer/monolayer at exterior surfaces of the carbon nanotubes 14 fitted to a Langmuir isotherm.
  • In step 240, the metal nanocrystals 24 attached to exterior surfaces of the carbon nanotubes 14 is heated to a temperature in air for a period of time to form a continuous polycrystalline metal nanowire array. The temperature is equal to or higher than the melting point of the metal nanocrystals. It should be noted that the metal nanocrystals have a melting point lower than bulk metal. Furthermore, surface melting can occur at a lower temperature due to enhanced mobility of metal atoms. For example, the gold nanocrystals attached to the surface of the carbon nanotubes 14 have a melting point of about 300 degree Celsius. Preferably, the metal nanocrystals 24 are heated for a time period in the range for example from 35 to 60 seconds as in the illustrated embodiment. Referring to FIG. 3D, after the heating step, the neighboring spherical metal nanocrystals are fused together, therefore a polycrystalline metal nanowire array 40 composed of a number of nanowires 30 each having a nanotube core is formed.
  • It is known that well-aligned carbon nanotube arrays can be obtained by various methods. Therefore, according to the present embodiment, metal nanowire arrays can be synthesized with the nanotube template. The metal nanowire array is suitable for practical applications, such as sensor, catalyst, and thermal interference material.
  • Finally, it is to be understood that the above-described embodiments are intended to illustrate rather than limit the invention. Variations may be made to the embodiments without departing from the spirit of the invention as claimed. The above-described embodiments illustrate the scope of the invention but do not restrict the scope of the invention.

Claims (11)

1. A method for fabricating a metal nanowire array, comprising the steps of providing a carbon nanotube array comprising a plurality of carbon nanotubes;
immersing the carbon nanotube array in a colloidal solution containing a solvent and a plurality of metal nanocrystals dispersed therein, thereby the metal nanocrystals being self-assembled on exterior surfaces of the carbon nanotubes;
taking the carbon nanotube array out of the colloidal solution; and
heating the metal nanocrystals in a manner such that the metal nanocrystals are fused into the metal nanowire array.
2. The method as claimed in claim 1, wherein the metal nanocrystals is comprised of a material selected from the group consisting of gold, silver, copper, tin, nickel, and germanium.
3. The method as claimed in claim 1, wherein the solvent is selected from the group consisting of water, chloroform, hexylene glycol and alcohols containing less than 5 carbon atoms.
4. The method as claimed in claim 1, wherein the colloidal solution furthermore contains a stabilizer agent.
5. The method as claimed in claim 4, wherein the stabilizer agent is selected from the group consisting of tetraoctylzrnmonium bromide, sodium citrate, and poly sodium 4-styrensnlfonate.
6. The method as claimed in claim 1, wherein the carbon nanotube array is immersed in the colloidal solution for a time period in the range from 5 to 72 hours.
7. The method as claimed in claim 1, wherein the metal nanocrystals are heated to a temperature that is equal to or higher than a melting point of the metal nanocrystals.
8. The method as claimed in claim 7, wherein the metal nanocrystals are heated for a time period in the range from 35 to 60 seconds.
9. The method as claimed in claim 7, wherein the carbon nanotubes extend in a common direction.
10. A metal nanowire array comprising:
an array of metal nanowires extending in a common direction, each metal nanowire comprising a core portion comprised of at least one carbon nanotube, and a cladding portion enclosing the core portion therein, the cladding portion being comprised of metal polycrystalline.
11. A metal nanowire array as claimed in claim 10, wherein the metal polycrystalline is comprised of a material selected from the group consisting of gold, silver, copper, nickel, and germanium.
US11/432,995 2005-10-20 2006-05-12 Metal nanowire array and method for fabricating the same Abandoned US20070089564A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200510100544.6 2005-10-20
CNA2005101005446A CN1951799A (en) 2005-10-20 2005-10-20 Preparation method of metal nanometer line array

Publications (1)

Publication Number Publication Date
US20070089564A1 true US20070089564A1 (en) 2007-04-26

Family

ID=37984108

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/432,995 Abandoned US20070089564A1 (en) 2005-10-20 2006-05-12 Metal nanowire array and method for fabricating the same

Country Status (2)

Country Link
US (1) US20070089564A1 (en)
CN (1) CN1951799A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080276979A1 (en) * 2007-05-07 2008-11-13 Lagally Max G Semiconductor nanowire thermoelectric materials and devices, and processes for producing same
US20090087567A1 (en) * 2007-10-02 2009-04-02 National Taiwan University Of Science And Technology Method of fabricating one-dimensional metallic nanostructure
US20120045754A1 (en) * 2006-04-07 2012-02-23 Zhang Jin Z Novel gold nanostructures and methods of use
US8951892B2 (en) 2012-06-29 2015-02-10 Freescale Semiconductor, Inc. Applications for nanopillar structures
JP2015531816A (en) * 2012-06-29 2015-11-05 ノースイースタン ユニバーシティ Three-dimensional crystalline, homogeneous and composite nanostructures prepared by field-induced assembly of nanoelements

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101376497B (en) * 2007-08-31 2011-06-22 清华大学 Carbon nano-tube composite material precast member and preparation thereof
CN101399167B (en) * 2008-07-15 2010-04-14 北方工业大学 Method for assembling silicon nano-wire
CN102358615B (en) * 2011-11-07 2014-04-16 中国科学院苏州纳米技术与纳米仿生研究所 Preparation method of multifunctional integrated nano-wire array
WO2015069227A1 (en) 2013-11-05 2015-05-14 The Regents Of The University Of California Metal-oxide anchored graphene and carbon-nanotube hybrid foam

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232706B1 (en) * 1998-11-12 2001-05-15 The Board Of Trustees Of The Leland Stanford Junior University Self-oriented bundles of carbon nanotubes and method of making same
US20040053053A1 (en) * 2002-09-17 2004-03-18 Jiang Kaili Carbon nanotube array and method for forming same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232706B1 (en) * 1998-11-12 2001-05-15 The Board Of Trustees Of The Leland Stanford Junior University Self-oriented bundles of carbon nanotubes and method of making same
US20040053053A1 (en) * 2002-09-17 2004-03-18 Jiang Kaili Carbon nanotube array and method for forming same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120045754A1 (en) * 2006-04-07 2012-02-23 Zhang Jin Z Novel gold nanostructures and methods of use
US9276063B2 (en) * 2006-04-07 2016-03-01 The Regents Of The University Of California Gold nanostructures and methods of use
US20080276979A1 (en) * 2007-05-07 2008-11-13 Lagally Max G Semiconductor nanowire thermoelectric materials and devices, and processes for producing same
US7888583B2 (en) * 2007-05-07 2011-02-15 Wisconsin Alumni Research Foundation Semiconductor nanowire thermoelectric materials and devices, and processes for producing same
US20090087567A1 (en) * 2007-10-02 2009-04-02 National Taiwan University Of Science And Technology Method of fabricating one-dimensional metallic nanostructure
US8951892B2 (en) 2012-06-29 2015-02-10 Freescale Semiconductor, Inc. Applications for nanopillar structures
JP2015531816A (en) * 2012-06-29 2015-11-05 ノースイースタン ユニバーシティ Three-dimensional crystalline, homogeneous and composite nanostructures prepared by field-induced assembly of nanoelements
US20150322589A1 (en) * 2012-06-29 2015-11-12 Northeastern University Three-Dimensional Crystalline, Homogenous, and Hybrid Nanostructures Fabricated by Electric Field Directed Assembly of Nanoelements
US9716141B2 (en) 2012-06-29 2017-07-25 Nxp Usa, Inc. Applications for nanopillar structures
US11220756B2 (en) 2012-06-29 2022-01-11 Northeastern University Three-dimensional crystalline, homogeneous, and hybrid nanostructures fabricated by electric field directed assembly of nanoelements

Also Published As

Publication number Publication date
CN1951799A (en) 2007-04-25

Similar Documents

Publication Publication Date Title
US20070089564A1 (en) Metal nanowire array and method for fabricating the same
El Mel et al. The Kirkendall effect and nanoscience: hollow nanospheres and nanotubes
Tang et al. One‐dimensional assemblies of nanoparticles: preparation, properties, and promise
Duan et al. Synthesis and optical properties of gallium arsenide nanowires
CN1251962C (en) Method of horizontal growth of carbon nanotube and field effect transistor using carbon nanotube
Hernández-Vélez Nanowires and 1D arrays fabrication: An overview
US9446953B2 (en) Fabrication of metallic hollow nanoparticles
US8962137B2 (en) Branched nanowire and method for fabrication of the same
Fang et al. Heterostructures and superlattices in one-dimensional nanoscale semiconductors
Cheng Nanostructures: fabrication and applications
US20090278257A1 (en) Method to assemble structures from nano-materials
WO2006097858A3 (en) Low-dielectric constant cryptocrystal layers and nanostructures
CN100415636C (en) Method for fabricating three-dimensional microstructure by fib-cvd and drawing system for three-dimensional microstructure
JP2007105822A (en) Atomic scale metal wire or metal nanocluster, and method for manufacturing same
US20100006820A1 (en) Silica nanowire comprising silicon nanodots and method of preparing the same
Cassell et al. Carbon nanotube networks by chemical vapor deposition
Ghosh et al. Cathodoluminescence in single and multiwall WS2 nanotubes: Evidence for quantum confinement and strain effect
JP4234348B2 (en) Inter-pattern wiring formation method
CN109850873B (en) Preparation method of single-walled carbon nanotube intramolecular junction
KR101303859B1 (en) Method for fabricating thermoelectricity nanowire having core/shell structure
US20060027799A1 (en) Methods of forming arryas of nanoscale building bolcks
US9725825B2 (en) One-dimensional titanium nanostructure and method for fabricating the same
Yang et al. Borophenes: monolayer, bilayer and heterostructures
DiStefano et al. Structural defects in transition metal dichalcogenide core-shell architectures
US20050100736A1 (en) Method for manufacturing a nanostructure in-situ, and in-situ manufactured nanostructure devices

Legal Events

Date Code Title Description
AS Assignment

Owner name: HON HAI PRECISION INDUSTRY CO., LTD, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TUNG, TSAI-SHIH;REEL/FRAME:017895/0564

Effective date: 20060508

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION