US20070004323A1 - Polishing composition and polishing method - Google Patents

Polishing composition and polishing method Download PDF

Info

Publication number
US20070004323A1
US20070004323A1 US11/516,131 US51613106A US2007004323A1 US 20070004323 A1 US20070004323 A1 US 20070004323A1 US 51613106 A US51613106 A US 51613106A US 2007004323 A1 US2007004323 A1 US 2007004323A1
Authority
US
United States
Prior art keywords
acid
polishing
glass substrate
canceled
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/516,131
Inventor
Keigo Ohashi
Toshiki Owaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US11/516,131 priority Critical patent/US20070004323A1/en
Publication of US20070004323A1 publication Critical patent/US20070004323A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00Surface treatment of glass, not in the form of fibres or filaments, by mechanical means

Definitions

  • the present invention relates to a polishing composition for use in polishing of a glass substrate for an information-recording medium, which is used for a hard disk and the like.
  • the present invention also relates to a polishing method using such a polishing composition.
  • Japanese Laid-Open Patent Publication No. 2001-89748 discloses a polishing composition (hereinafter referred to as the first prior art polishing composition) containing an abrasive mainly composed of a rare earth oxide such as cerium oxide, and water.
  • Japanese Laid-Open Patent Publication No. 2000-144112 discloses a polishing composition (hereinafter referred to as the second prior art polishing composition) containing an abrasive that comprises at least one selected from the group consisting of an iron-containing oxide and an iron-containing basic compound, and water.
  • a polishing composition for use in applications for polishing a glass substrate include:
  • the polishing composition is easy to clean off, namely, the polishing composition is easily removed by cleaning from the glass substrate;
  • the abrasive has good dispersibility in the polishing composition
  • the polishing composition has a high stock removal rate, i.e., the polishing composition is highly capable of polishing a glass substrate.
  • the first and second prior art polishing compositions do not satisfy the above requirements, and are thus susceptible to improvement.
  • an object of the present invention is to provide a polishing composition that can be suitably used in applications for polishing a glass substrate.
  • Another object of the present invention is to provide a polishing method using such a polishing composition.
  • the polishing composition for use in applications for polishing a glass substrate, contains silicon dioxide, an acid, and water.
  • the present invention also provides a method for polishing a glass substrate.
  • the method includes preparing the above polishing composition and polishing the surface of a glass substrate, using the prepared polishing composition.
  • a glass substrate for an information-recording medium such as a magnetic disc
  • the main crystal phase of the crystallized glass may be spodumene, mullite, aluminum borate crystal, ⁇ -quartz solid solution, ⁇ -quartz, cordierite, enstatite, celsian, wollastonite, anorthite, forsterite, lithium metasilicate, or lithium disilicate.
  • a glass substrate is usually provided to a chemical machine polishing (CMP) process so as to have the surface thereof mirror-finished.
  • CMP chemical machine polishing
  • the process of polishing a glass substrate is divided into a plurality of polishing steps to be conducted, for the purpose of improving the stock removal rate, as well as the quality of the surface of the polished glass substrate.
  • the plurality of polishing steps include, for example, a step of roughly polishing the glass substrate surface and a step of superfinely polishing the glass substrate surface.
  • the plurality of polishing steps include, for example, a step of preliminarily polishing the glass substrate surface and a step of finish-polishing the glass substrate surface.
  • a polishing composition according the present embodiment is used, for example, in the final polishing step (finish-polishing step) among the plurality of polishing steps.
  • the polished glass substrate is usually subjected to a chemical strengthening process using a low-temperature ion exchange method or the like, in order to improve resistance to shock and vibration.
  • the polishing composition according to the present embodiment contains silicon dioxide, an acid, and water.
  • Silicon dioxide serves as an abrasive for mechanically polishing a glass substrate.
  • Silicon dioxide may be colloidal silica, fumed silica, or precipitated silica. Among them, colloidal silica or fumed silica is preferable as being capable of reducing the surface roughness of a polished glass substrate, and colloidal silica is more preferable.
  • One or more kinds of silicon dioxide may be contained in the polishing composition.
  • the mean particle diameter D SA of colloidal silica which is determined from the specific surface area thereof by the BET method, is preferably in the range of 5 to 300 nm, more preferably in the range of 5 to 200 nm, and most preferably in the range of 5 to 120 nm.
  • the mean particle diameter D N4 of colloidal silica which is determined by the laser diffraction scattering method, is preferably in the range of 5 to 300 nm, more preferably in the range of 5 to 200 nm, and most preferably in the range of 5 to 150 nm.
  • the mean particle diameter DSA of fumed silica is preferably in the range of 10 to 300 nm, more preferably in the range of 10 to 200 nm, and most preferably in the range of 10 to 120 nm.
  • the mean particle diameter D N4 of fumed silica is preferably in the range of 30 to 500 nm, more preferably in the range of 40 to 400 nm, and most preferably in the range of 50 to 300 nm.
  • the content of silicon dioxide in the polishing composition is preferably in the range of 0.1 to 50 mass %, more preferably in the range of 1 to 40 mass %, and most preferably in the range of 3 to 30 mass %.
  • the content of silicon dioxide is less than 0.1 mass %, a sufficiently high stock removal rate might not be obtained, or polishing the glass substrate may become difficult due to high polishing resistance.
  • the content of silicon dioxide exceeds 50 mass %, the viscosity of the polishing composition excessively increases to make the polishing composition apt to gelate, leading to reduction in handleability of the polishing composition.
  • the acid serves as a polishing accelerator for accelerating mechanical polishing by silicon dioxide.
  • the reason why the acid accelerates mechanical polishing is presumably that the acid acts on the surface of silicon dioxide for activation, thereby increasing the mechanical polishing force of silicon dioxide.
  • the acid also corrodes or etches the glass substrate surface, as a secondary action, to chemically polish the glass substrate surface.
  • the chemical polishing action of the acid is weaker than the mechanical polishing action of silicon dioxide.
  • the acid may be an inorganic acid or an organic acid.
  • Examples of the inorganic acid may include hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, and boric acid.
  • Examples of the organic acid may include acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, alanine, glycin, lactic acid, hydroxyethylidene diphosphonic acid (abbreviation: HEDP), nitrilotris(methylene phosphonic acid) (abbreviation: NTMP), and phosphonobutane tricarboxylic acid (abbreviation: PBTC).
  • HEDP hydroxyethylidene diphosphonic acid
  • NTMP nitrilotris(methylene phosphonic acid)
  • PBTC phosphonobutane tric
  • hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, lactic acid, HEDP, NTMP, or PBTC is preferable, since these acids strongly act to accelerate mechanical polishing by silicon dioxide.
  • hydrochloric acid, phosphoric acid, phosphonic acid, tartaric acid, citric acid, maleic acid, or malonic acid is more preferable.
  • One or more acids may be contained in the polishing composition.
  • the content of the acid in the polishing composition is preferably in the range of 0.05 to 10 masse, more preferably in the range of 0.1 to 8 mass %, and most preferably in the range of 0.3 to 5 mass %.
  • the content of the acid is less than 0.05 mass %, it is highly possible that a sufficiently high stock removal rate will not be obtained because the acid weakly acts to accelerate mechanical polishing by silicon dioxide.
  • the content of the acid exceeds 10 mass %, the viscosity of the polishing composition excessively increases to make the polishing composition apt to gelate, which is uneconomical and further increases the possibility of producing roughness on the surface of the polished glass substrate.
  • Water serves to dissolve or disperse ingredients other than water of the polishing composition.
  • Water preferably contains as little impurities as possible so as to avoid inhibiting the actions of other ingredients.
  • pure water or ultrapure water obtained by removing impurity ions with an ion-exchange resin and then contaminants through a filter, or distilled water, is preferable.
  • the polishing composition may further contain a chelating agent, a surfactant, a preservative, or the like according to need.
  • the polishing composition is prepared by mixing ingredients, other than water, with water.
  • a blade-type agitator or an ultrasonic disperser may be used.
  • the pH of the polishing composition is preferably not more than 9, more preferably in the range of 0.5 to 6, further more preferably in the range of 1 to 4, and most preferably in the range of 1 to 2.5.
  • the pH of the polishing composition is set to the range of 0.5 to 6, the polishing composition is highly capable of polishing a glass substrate, thereby to improve the stock removal rate.
  • the pH of the polishing composition is adjustable by changing the content of the acid.
  • a polishing composition according to the present embodiment may be provided for use after dilution with water, or without dilution.
  • the dilution ratio (ratio by volume) is preferably not more than 50 times, more preferably not more than 20 times, and most preferably not more than 10 times.
  • the dilution rate exceeds 50 times, the content of silicon dioxide and the acid in the polishing composition after dilution might become excessively low, resulting in failure to obtain a sufficiently high stock removal rate.
  • the polishing step the surface of a glass substrate is relatively roughly polished using polishing slurry containing cerium oxide.
  • the superfine polishing step as the final polishing step, the glass substrate surface is superfinely polished using the polishing composition according to the present embodiment.
  • the polishing composition is provided to the surface of the polishing pad while the polishing head and the turntable are rotated.
  • a glass substrate may be polished in a single-staged polishing process using a polishing composition according to the present embodiment, in place of a multi-stage polishing process.
  • the present embodiment has the following advantages.
  • a polishing composition according to the present embodiment contains silicon dioxide as an abrasive. This reduces the surface roughness of the polished glass substrate, as compared to a polishing composition containing cerium oxide as an abrasive. Presumably, this is attributed to the fact that the primary particle of cerium oxide has an irregular form whereas the primary particle of silicon dioxide has a spherical form. Namely, it is presumed that, with the primary particle in spherical form, silicon dioxide is capable of polishing the glass substrate surface more finely than cerium oxide, thereby to reduce surface roughness of the polished glass substrate.
  • silicon dioxide has lower reactivity to a glass substrate material than cerium oxide. For this reason, silicon dioxide attached to the glass substrate is readily removed by cleaning from the glass substrate without reacting with a glass substrate material and sticking to the glass substrate surface. It can therefore be said that a polishing composition according to the present embodiment has the property of being readily cleaned off from the polishing surface.
  • silicon dioxide has greater resistance to agglomeration and higher dispersibility in the polishing composition than cerium oxide (cf. later-described Examples 1 to 37 and Comparative Examples 4, 5). It can therefore be said that a polishing composition according to the present embodiment also contains an adhesive having good dispersibility.
  • the acid in the polishing composition acts to accelerate mechanical polishing by silicon dioxide as well as to chemically polish the glass substrate surface.
  • the ability of the polishing composition to polish the glass substrate improves, which leads to improvement in stock removal rate.
  • the acid contributes to improvement in stock removal rate by means of activation of the silicon dioxide surface and etching of the glass substrate surface, it is not considered to act to oxidize the glass substrate surface to be made brittle.
  • An abrasive and a polishing accelerator were mixed with water to prepare polishing compositions according to Examples 1 to 37 and Comparative Examples 1 to 5.
  • the kinds of abrasives and polishing accelerators used are as shown in Table 1.
  • the pH of each of the prepared polishing compositions according to Examples 1 to 37 and Comparative Examples 1 to 5 was measured, and the measurement results are shown in Table 1.
  • the surface of a glass substrate was polished using each of the polishing compositions according to Examples 1 to 37 and Comparative Examples 1 to 5 under the polishing conditions described below.
  • the mass of each glass substrate before and after polishing was measured, and a stock removal rate was then calculated by the below-mentioned formula. Based on the obtained stock removal rate, each of the polishing compositions was rated on a scale from one to four: (1) Very Good; (2) Good; (3) Slightly Poor; and (4) Poor.
  • the polishing composition was rated very good when the stock removal rate was not less than 0.12 ⁇ m/minute; it was rated good when the stock removal rate was not less than 0.08 ⁇ m/minute and less than 0.12 ⁇ m/minute; it was rated slightly poor when the stock removal rate was not less than 0.05 ⁇ m/minute and less than 0.08 ⁇ m/minute; it was rated poor when the stock removal rate was less than 0.05 ⁇ m/minute.
  • Polishing machine single-sided polishing machine 15′′ ⁇ (3 pieces/plate), manufactured by Engis Corporation (Japan).
  • Material to be polished 2.5-inch (external diameter: 63.5 mm) glass substrate obtained by roughly polishing the surface of reinforced glass, using polishing slurry containing cerium oxide, so as to have a surface roughness Ra of 0.8 nm.
  • Polishing pad Suede type polishing pad “Belatrix N0058,” manufactured by Kanebo, Ltd.
  • the polished glass substrate was subjected to scrub cleaning for 30 seconds and megasonic cleaning for 45 seconds, and then spin drying for 180 seconds. Thereafter, the surface condition of the glass substrate was observed with an atomic force microscope “NanoScope IIIa Dimension 3000” (scan area: 10 ⁇ m ⁇ 10 ⁇ m, scan rate: 1.00 Hz, sample lines: 256), manufactured by Digital Instruments Inc. Based on the observed number of adherents to the glass substrate surface, each of the polishing compositions was rated on a scale from one to four: (1) Very Good; (2) Good; (3) Slightly Poor; and (4) Poor.
  • the polishing composition was rated very good when the observed number of adherents to the glass substrate surface was zero; it was rated good when the number of adherents was less than 3; it was rated slightly poor when the number of adherents was not less than 3 and less than 5; it was rated poor when the number of adherents was not less than 5.
  • the polishing composition was rated very good when the surface roughness Ra was less than 0.2 nm; it was rated good when the surface roughness Ra was not less than 0.2 nm and less than 0.25 nm: it was rated slightly poor when the surface roughness was not less than 0.25 nm and less than 0.3 nm; it was rated poor when the surface roughness Ra was not less than 0.3 nm.
  • each of the polishing compositions according to Examples 1 to 37 and Comparative Examples 1 to 5 was put into a calorimetric tube having an inner diameter of 2.5 cm, and allowed to stand there for one hour. Thereafter, the height of a deposit produced in the polishing composition in each calorimetric tube was measured. Based on the measured height of the deposit, each of the polishing compositions was rated on a scale from one to four: (1) Very Good; (2) Good; (3) Slightly Poor; and (4) Poor.
  • each of the polishing compositions was comprehensively rated on a scale from one to four: (1) Very Good; (2) Good; (3) Slightly Poor; and (4) Poor. Specifically, 5 points, 3 points, 1 point and 0 point were given for Very Good, Good, Slightly Poor and Poor, respectively, and the total rating points obtained by each polishing composition was accordingly calculated.
  • a polishing composition was rated very good when the total rating points for the four items was 20, it was rated good when the total rating points was 16 to 19, it was rated slightly poor when the total rating points was 10 to 15, and it was rated poor when the total rating points was 9 or less.
  • colloidal silica phosphoric acid 1.7 3 1 1 1 2 1% 1% Ex. 16 fumed silica phosphoric acid 1.9 1 1 3 1 2 20% 1% Ex. 17 colloidal silica phosphoric acid 2.8 1 1 1 1 1 40% 1% Ex. 18 colloidal silica methanesulfonic acid 1.1 1 1 1 1 1 20% 1% Ex. 19 colloidal silica HEDP 1.4 1 1 1 1 1 20% 1% Ex. 20 colloidal silica NTMP 1.4 1 1 1 1 1 20% 1% Ex. 21 colloidal silica hydrochloric acid 1.4 1 1 1 1 1 20% 1% Ex. 22 colloidal silica PBTC 1.5 1 1 1 1 1 20% 1% Ex.
  • colloidal silica maleic acid 1.5 1 1 1 1 1 20% 1%
  • colloidal silica phosphinic acid 1.7 1 1 1 1 1 20% 1%
  • colloidal silica tartaric acid 2.1 1 1 1 1 1 20% 1%
  • colloidal silica malonic acid 2.2 1 1 1 1 1 20% 1%
  • colloidal silica citric acid 2.4 1 1 1 1 1 1 20% 1%
  • colloidal silica malic acid 2.4 1 1 1 1 1 1 20% 1%
  • colloidal silica formic acid 2.6 1 1 1 1 1 20% 1%
  • colloidal silica glycolic acid 2.8 1 1 1 1 20% 1%
  • colloidal silica glycolic acid 2.8 1 1 1 1 20% 1%
  • colloidal silica itaconic acid 2.9 1 1 1 1 1 20% 1%
  • colloidal silica gluconic acid 2.9 1 1 1 1 1 20% 1%
  • colloidal silica succinic acid 3.2 1 1 1 1 1 20% 1%
  • colloidal silica acetic acid 3.8 2 1 1 1 2 20% 1%
  • colloidal silica boric acid 7.8 2 1 1 1 2 20% 1%
  • colloidal silica glycin 8.6 2 1 1 1 2 20% 1%
  • Colloidal silica is colloidal silica having a mean particle size D SA of 80 nm and a mean particle size D N4 of 80 nm;
  • “Fumed silica” is fumed silica having a mean particle size D SA of 30 nm and a mean particle size D N4 of 90 nm;
  • Cerium oxide is cerium oxide (Ce 2 O 3 ) having a mean particle size D 50 of 450 nm;
  • each of the polishing compositions according to Examples 1 to 37 was not rated as poor for any rating item, and was rated as either very good or good for the “Comprehensive rating”. This result suggests that the polishing compositions according to Examples 1 to 37 are useful in applications for polishing a glass substrate. It was found from the rating results of the polishing compositions according to Examples 2, 6, 7 and 9 that, when the acid (polishing accelerator) is maleic acid, an organic acid, the stock removal rate improves, in particular, by setting the content of silicon dioxide (abrasive) to not less than 10 mass %, and more specifically in the range of 10 to 40 mass %.
  • the stock removal rate improves, in particular, by setting the content of silicon dioxide to not less than 20 mass %, and more specifically in the range of 20 to 40 mass %. It was further found from the rating results of the polishing compositions according to Examples 1 to 5 and 10 to 13 that the stock removal rate improves, in particular, by setting the content of the acid to not less than 0.1 mass %, and more specifically in the range of 0.1 to 3 mass %.

Abstract

A polishing composition of the present invention contains silicon dioxide, an acid, and water. Silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is, for example, hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, boric acid, acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, alanine, glycin, lactic acid, hydroxyethylidene diphosphonic acid, nitrilotris(methylene phosphonic acid), or phosphonobutane tricarboxylic acid. The pH of the polishing composition is preferably in the range of 0.5 to 6. The polishing composition can be suitably used in applications for polishing a glass substrate.

Description

    BACKGROUND OF THE INVENTION
  • The present invention relates to a polishing composition for use in polishing of a glass substrate for an information-recording medium, which is used for a hard disk and the like. The present invention also relates to a polishing method using such a polishing composition.
  • Conventionally, there is a known polishing composition for use in applications for polishing a glass substrate for an information-recording medium. Japanese Laid-Open Patent Publication No. 2001-89748 discloses a polishing composition (hereinafter referred to as the first prior art polishing composition) containing an abrasive mainly composed of a rare earth oxide such as cerium oxide, and water. Japanese Laid-Open Patent Publication No. 2000-144112 discloses a polishing composition (hereinafter referred to as the second prior art polishing composition) containing an abrasive that comprises at least one selected from the group consisting of an iron-containing oxide and an iron-containing basic compound, and water. These first and second prior art polishing compositions mechanically polish a glass substrate by the action of the abrasive.
  • Requirements to be met by a polishing composition for use in applications for polishing a glass substrate include:
  • (1) the surface roughness of the polished glass substrate must be small;
  • (2) the polishing composition is easy to clean off, namely, the polishing composition is easily removed by cleaning from the glass substrate;
  • (3) the abrasive has good dispersibility in the polishing composition; and
  • (4) the polishing composition has a high stock removal rate, i.e., the polishing composition is highly capable of polishing a glass substrate.
  • The first and second prior art polishing compositions, however, do not satisfy the above requirements, and are thus susceptible to improvement.
  • SUMMARY OF THE INVENTION
  • Accordingly, an object of the present invention is to provide a polishing composition that can be suitably used in applications for polishing a glass substrate. Another object of the present invention is to provide a polishing method using such a polishing composition.
  • To achieve the foregoing and other objectives and in accordance with the purpose of the present invention, a polishing composition is provided. The polishing composition, for use in applications for polishing a glass substrate, contains silicon dioxide, an acid, and water.
  • The present invention also provides a method for polishing a glass substrate. The method includes preparing the above polishing composition and polishing the surface of a glass substrate, using the prepared polishing composition.
  • Other aspects and advantages of the invention will become apparent from the following description, illustrating by way of example the principles of the invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • One embodiment of the present invention will now be described.
  • A glass substrate for an information-recording medium, such as a magnetic disc, is formed of, for example, aluminosilicate glass, soda lime glass, soda aluminosilicate glass, almino borosilicate glass, borosilicate glass, quartz glass, or crystallized glass. The main crystal phase of the crystallized glass may be spodumene, mullite, aluminum borate crystal, β-quartz solid solution, α-quartz, cordierite, enstatite, celsian, wollastonite, anorthite, forsterite, lithium metasilicate, or lithium disilicate. A glass substrate is usually provided to a chemical machine polishing (CMP) process so as to have the surface thereof mirror-finished.
  • Typically, the process of polishing a glass substrate is divided into a plurality of polishing steps to be conducted, for the purpose of improving the stock removal rate, as well as the quality of the surface of the polished glass substrate. The plurality of polishing steps include, for example, a step of roughly polishing the glass substrate surface and a step of superfinely polishing the glass substrate surface. In other words, the plurality of polishing steps include, for example, a step of preliminarily polishing the glass substrate surface and a step of finish-polishing the glass substrate surface. A polishing composition according the present embodiment is used, for example, in the final polishing step (finish-polishing step) among the plurality of polishing steps. The polished glass substrate is usually subjected to a chemical strengthening process using a low-temperature ion exchange method or the like, in order to improve resistance to shock and vibration.
  • The polishing composition according to the present embodiment contains silicon dioxide, an acid, and water.
  • Silicon dioxide serves as an abrasive for mechanically polishing a glass substrate. Silicon dioxide may be colloidal silica, fumed silica, or precipitated silica. Among them, colloidal silica or fumed silica is preferable as being capable of reducing the surface roughness of a polished glass substrate, and colloidal silica is more preferable. One or more kinds of silicon dioxide may be contained in the polishing composition.
  • When silicon dioxide is colloidal silica, the mean particle diameter DSA of colloidal silica, which is determined from the specific surface area thereof by the BET method, is preferably in the range of 5 to 300 nm, more preferably in the range of 5 to 200 nm, and most preferably in the range of 5 to 120 nm. The mean particle diameter DN4 of colloidal silica, which is determined by the laser diffraction scattering method, is preferably in the range of 5 to 300 nm, more preferably in the range of 5 to 200 nm, and most preferably in the range of 5 to 150 nm. When silicon dioxide is fumed silica, the mean particle diameter DSA of fumed silica is preferably in the range of 10 to 300 nm, more preferably in the range of 10 to 200 nm, and most preferably in the range of 10 to 120 nm. The mean particle diameter DN4 of fumed silica is preferably in the range of 30 to 500 nm, more preferably in the range of 40 to 400 nm, and most preferably in the range of 50 to 300 nm. When the mean particle diameter DSA or DN4 of colloidal silica is too small, or when the mean particle diameter DSA or DN4 of fumed silica is too small, it is highly possible that a sufficiently high stock removal rate will not be obtained. When the mean particle diameter DSA or DN4 of colloidal silica is too large, or when the mean particle diameter DSA or DN4 of fumed silica is too large, it is highly possible that the surface roughness of the polished glass substrate will become large, or scratching will occur on the surface of the polished glass substrate.
  • The content of silicon dioxide in the polishing composition is preferably in the range of 0.1 to 50 mass %, more preferably in the range of 1 to 40 mass %, and most preferably in the range of 3 to 30 mass %. When the content of silicon dioxide is less than 0.1 mass %, a sufficiently high stock removal rate might not be obtained, or polishing the glass substrate may become difficult due to high polishing resistance. When the content of silicon dioxide exceeds 50 mass %, the viscosity of the polishing composition excessively increases to make the polishing composition apt to gelate, leading to reduction in handleability of the polishing composition.
  • The acid serves as a polishing accelerator for accelerating mechanical polishing by silicon dioxide. The reason why the acid accelerates mechanical polishing is presumably that the acid acts on the surface of silicon dioxide for activation, thereby increasing the mechanical polishing force of silicon dioxide. The acid also corrodes or etches the glass substrate surface, as a secondary action, to chemically polish the glass substrate surface. The chemical polishing action of the acid is weaker than the mechanical polishing action of silicon dioxide. The acid may be an inorganic acid or an organic acid.
  • Examples of the inorganic acid may include hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, and boric acid. Examples of the organic acid may include acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, alanine, glycin, lactic acid, hydroxyethylidene diphosphonic acid (abbreviation: HEDP), nitrilotris(methylene phosphonic acid) (abbreviation: NTMP), and phosphonobutane tricarboxylic acid (abbreviation: PBTC). Among them, hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, lactic acid, HEDP, NTMP, or PBTC is preferable, since these acids strongly act to accelerate mechanical polishing by silicon dioxide. Among these preferable acids, hydrochloric acid, phosphoric acid, phosphonic acid, tartaric acid, citric acid, maleic acid, or malonic acid is more preferable. One or more acids may be contained in the polishing composition.
  • The content of the acid in the polishing composition is preferably in the range of 0.05 to 10 masse, more preferably in the range of 0.1 to 8 mass %, and most preferably in the range of 0.3 to 5 mass %. When the content of the acid is less than 0.05 mass %, it is highly possible that a sufficiently high stock removal rate will not be obtained because the acid weakly acts to accelerate mechanical polishing by silicon dioxide. When the content of the acid exceeds 10 mass %, the viscosity of the polishing composition excessively increases to make the polishing composition apt to gelate, which is uneconomical and further increases the possibility of producing roughness on the surface of the polished glass substrate.
  • Water serves to dissolve or disperse ingredients other than water of the polishing composition. Water preferably contains as little impurities as possible so as to avoid inhibiting the actions of other ingredients. Specifically, pure water or ultrapure water, obtained by removing impurity ions with an ion-exchange resin and then contaminants through a filter, or distilled water, is preferable.
  • The polishing composition may further contain a chelating agent, a surfactant, a preservative, or the like according to need.
  • The polishing composition is prepared by mixing ingredients, other than water, with water. In the mixing, a blade-type agitator or an ultrasonic disperser may be used. There is no limitation to the order of mixing the ingredients, other than water, into water.
  • The pH of the polishing composition is preferably not more than 9, more preferably in the range of 0.5 to 6, further more preferably in the range of 1 to 4, and most preferably in the range of 1 to 2.5. When the pH is higher than 9, it is highly possible that a sufficiently high stock removal rate will not be obtained. When the pH is lower than 0.5, it is highly possible that the handleability of the polishing composition will deteriorate. When the pH of the polishing composition is set to the range of 0.5 to 6, the polishing composition is highly capable of polishing a glass substrate, thereby to improve the stock removal rate. The pH of the polishing composition is adjustable by changing the content of the acid.
  • A polishing composition according to the present embodiment may be provided for use after dilution with water, or without dilution. When the polishing composition is diluted with water, the dilution ratio (ratio by volume) is preferably not more than 50 times, more preferably not more than 20 times, and most preferably not more than 10 times. When the dilution rate exceeds 50 times, the content of silicon dioxide and the acid in the polishing composition after dilution might become excessively low, resulting in failure to obtain a sufficiently high stock removal rate.
  • The case where a glass substrate is polished by conducting the two-stage polishing process consisting of the rough polishing step and the superfine polishing step will be described. First, in the rough polishing step, the surface of a glass substrate is relatively roughly polished using polishing slurry containing cerium oxide. Next, in the superfine polishing step as the final polishing step, the glass substrate surface is superfinely polished using the polishing composition according to the present embodiment. In the superfine polishing, in a state where the glass substrate attached to a polishing head is kept pressed to a polishing pad on a turntable at constant pressure, the polishing composition is provided to the surface of the polishing pad while the polishing head and the turntable are rotated.
  • It is to be noted that a glass substrate may be polished in a single-staged polishing process using a polishing composition according to the present embodiment, in place of a multi-stage polishing process.
  • The present embodiment has the following advantages.
  • A polishing composition according to the present embodiment contains silicon dioxide as an abrasive. This reduces the surface roughness of the polished glass substrate, as compared to a polishing composition containing cerium oxide as an abrasive. Presumably, this is attributed to the fact that the primary particle of cerium oxide has an irregular form whereas the primary particle of silicon dioxide has a spherical form. Namely, it is presumed that, with the primary particle in spherical form, silicon dioxide is capable of polishing the glass substrate surface more finely than cerium oxide, thereby to reduce surface roughness of the polished glass substrate.
  • Moreover, silicon dioxide has lower reactivity to a glass substrate material than cerium oxide. For this reason, silicon dioxide attached to the glass substrate is readily removed by cleaning from the glass substrate without reacting with a glass substrate material and sticking to the glass substrate surface. It can therefore be said that a polishing composition according to the present embodiment has the property of being readily cleaned off from the polishing surface.
  • Furthermore, silicon dioxide has greater resistance to agglomeration and higher dispersibility in the polishing composition than cerium oxide (cf. later-described Examples 1 to 37 and Comparative Examples 4, 5). It can therefore be said that a polishing composition according to the present embodiment also contains an adhesive having good dispersibility.
  • The acid in the polishing composition acts to accelerate mechanical polishing by silicon dioxide as well as to chemically polish the glass substrate surface. By such actions of the acid, the ability of the polishing composition to polish the glass substrate improves, which leads to improvement in stock removal rate. It should be noted that, while the acid contributes to improvement in stock removal rate by means of activation of the silicon dioxide surface and etching of the glass substrate surface, it is not considered to act to oxidize the glass substrate surface to be made brittle.
  • Next, examples and comparative examples of the present invention will be described.
  • An abrasive and a polishing accelerator were mixed with water to prepare polishing compositions according to Examples 1 to 37 and Comparative Examples 1 to 5. The kinds of abrasives and polishing accelerators used are as shown in Table 1. The pH of each of the prepared polishing compositions according to Examples 1 to 37 and Comparative Examples 1 to 5 was measured, and the measurement results are shown in Table 1.
  • The surface of a glass substrate was polished using each of the polishing compositions according to Examples 1 to 37 and Comparative Examples 1 to 5 under the polishing conditions described below. Herein, the mass of each glass substrate before and after polishing was measured, and a stock removal rate was then calculated by the below-mentioned formula. Based on the obtained stock removal rate, each of the polishing compositions was rated on a scale from one to four: (1) Very Good; (2) Good; (3) Slightly Poor; and (4) Poor. Specifically, the polishing composition was rated very good when the stock removal rate was not less than 0.12 μm/minute; it was rated good when the stock removal rate was not less than 0.08 μm/minute and less than 0.12 μm/minute; it was rated slightly poor when the stock removal rate was not less than 0.05 μm/minute and less than 0.08 μm/minute; it was rated poor when the stock removal rate was less than 0.05 μm/minute. These rating results are shown in the column entitled “Stock removal rate” in Table 1.
  • <Polishing Condition>
  • Polishing machine: single-sided polishing machine 15″φ (3 pieces/plate), manufactured by Engis Corporation (Japan).
  • Material to be polished: 2.5-inch (external diameter: 63.5 mm) glass substrate obtained by roughly polishing the surface of reinforced glass, using polishing slurry containing cerium oxide, so as to have a surface roughness Ra of 0.8 nm.
  • Polishing pad: Suede type polishing pad “Belatrix N0058,” manufactured by Kanebo, Ltd.
  • Polishing pressure: 100 g/cm2 (=9.8 kPa)
  • Turntable rotation speed: 102 rpm
  • Polishing composition supplied speed: 50 ml/minute
  • Polishing time: 20 minutes
  • <Calculation formula>
    Stock removal rate [μm/minute]=(Difference in mass [g] of glass substrate before/after polishing÷(30.02625 [cm2]×2.52 [g/cm3])×10000 [μm/cm])÷polishing time [minute]
  • The polished glass substrate was subjected to scrub cleaning for 30 seconds and megasonic cleaning for 45 seconds, and then spin drying for 180 seconds. Thereafter, the surface condition of the glass substrate was observed with an atomic force microscope “NanoScope IIIa Dimension 3000” (scan area: 10 μm×10 μm, scan rate: 1.00 Hz, sample lines: 256), manufactured by Digital Instruments Inc. Based on the observed number of adherents to the glass substrate surface, each of the polishing compositions was rated on a scale from one to four: (1) Very Good; (2) Good; (3) Slightly Poor; and (4) Poor. Specifically, the polishing composition was rated very good when the observed number of adherents to the glass substrate surface was zero; it was rated good when the number of adherents was less than 3; it was rated slightly poor when the number of adherents was not less than 3 and less than 5; it was rated poor when the number of adherents was not less than 5. These rating results are shown in the column entitled “Ease of cleaning” column in Table 1.
  • The surface roughness Ra of the glass substrate after spin drying was measured with an atomic force microscope “NanoScope IIIa Dimension 3000” (scan area: 10 μm×10 μm, scan rate: 1.00 Hz, sample lines: 256, off-line filter: flatten auto order-2). Based on the measured surface roughness Ra of the glass substrate, each of the polishing compositions was rated on a scale from one to four: (1) Very Good; (2) Good; (3) Slightly Poor; and (4) Poor. Specifically, the polishing composition was rated very good when the surface roughness Ra was less than 0.2 nm; it was rated good when the surface roughness Ra was not less than 0.2 nm and less than 0.25 nm: it was rated slightly poor when the surface roughness was not less than 0.25 nm and less than 0.3 nm; it was rated poor when the surface roughness Ra was not less than 0.3 nm. These rating results are shown in the column entitled “Surface roughness” in Table 1.
  • Each of the polishing compositions according to Examples 1 to 37 and Comparative Examples 1 to 5 was put into a calorimetric tube having an inner diameter of 2.5 cm, and allowed to stand there for one hour. Thereafter, the height of a deposit produced in the polishing composition in each calorimetric tube was measured. Based on the measured height of the deposit, each of the polishing compositions was rated on a scale from one to four: (1) Very Good; (2) Good; (3) Slightly Poor; and (4) Poor. Specifically, the polishing composition was rated very good when the height of the deposit was less than 1 cm; it was rated good when the height of the deposit was not less than 1 cm and less than 2 cm: it was rated slightly poor when the height of the deposit was not less than 2 cm and less than 3 cm; it was rated poor when the height of the deposit was not less than 3 cm. Those rating results are shown in the column entitled “Dispersibility” in Table 1.
  • Based on the above results of the ratings for the four items: Stock removal rate, Ease of cleaning, Surface roughness, and Dispersibility, each of the polishing compositions was comprehensively rated on a scale from one to four: (1) Very Good; (2) Good; (3) Slightly Poor; and (4) Poor. Specifically, 5 points, 3 points, 1 point and 0 point were given for Very Good, Good, Slightly Poor and Poor, respectively, and the total rating points obtained by each polishing composition was accordingly calculated. A polishing composition was rated very good when the total rating points for the four items was 20, it was rated good when the total rating points was 16 to 19, it was rated slightly poor when the total rating points was 10 to 15, and it was rated poor when the total rating points was 9 or less. These rating results are shown in the column entitled “Comprehensive rating” in Table 1.
    TABLE 1
    Polishing Stock
    Abrasive accelerator removal Ease of Surface Comprehensive
    [mass percentage] [mass percentage] pH rate cleaning roughness Dispersibility rating
    Ex. 1 colloidal silica maleic acid 1.3 1 1 1 1 1
    20% 3%
    Ex. 2 colloidal silica maleic acid 1.6 1 1 1 1 1
    20% 1%
    Ex. 3 colloidal silica maleic acid 2.2 1 1 1 1 1
    20% 0.1%
    Ex. 4 colloidal silica maleic acid 5.0 2 1 1 1 2
    20% 0.04%
    Ex. 5 colloidal silica maleic acid 8.5 3 1 1 1 2
    20% 0.01%
    Ex. 6 colloidal silica maleic acid 1.5 1 1 1 1 1
    10% 1%
    Ex. 7 colloidal silica maleic acid 1.4 3 1 1 1 2
    1% 1%
    Ex. 8 fumed silica maleic acid 1.7 1 1 3 1 2
    20% 1%
    Ex. 9 colloidal silica maleic acid 2.6 1 1 1 1 1
    40% 1%
    Ex. 10 colloidal silica phosphoric acid 1.6 1 1 1 1 1
    20% 3%
    Ex. 11 colloidal silica phosphoric acid 1.9 1 1 1 1 1
    20% 1%
    Ex. 12 colloidal silica phosphoric acid 2.5 1 1 1 1 1
    20% 0.1%
    Ex. 13 colloidal silica phosphoric acid 9.0 3 1 1 1 2
    20% 0.01%
    Ex. 14 colloidal silica phosphoric acid 1.7 2 1 1 1 2
    10% 1%
    Ex. 15 colloidal silica phosphoric acid 1.7 3 1 1 1 2
    1% 1%
    Ex. 16 fumed silica phosphoric acid 1.9 1 1 3 1 2
    20% 1%
    Ex. 17 colloidal silica phosphoric acid 2.8 1 1 1 1 1
    40% 1%
    Ex. 18 colloidal silica methanesulfonic acid 1.1 1 1 1 1 1
    20% 1%
    Ex. 19 colloidal silica HEDP 1.4 1 1 1 1 1
    20% 1%
    Ex. 20 colloidal silica NTMP 1.4 1 1 1 1 1
    20% 1%
    Ex. 21 colloidal silica hydrochloric acid 1.4 1 1 1 1 1
    20% 1%
    Ex. 22 colloidal silica PBTC 1.5 1 1 1 1 1
    20% 1%
    Ex. 23 colloidal silica maleic acid 1.5 1 1 1 1 1
    20% 1%
    Ex. 24 colloidal silica phosphinic acid 1.7 1 1 1 1 1
    20% 1%
    Ex. 25 colloidal silica tartaric acid 2.1 1 1 1 1 1
    20% 1%
    Ex. 26 colloidal silica malonic acid 2.2 1 1 1 1 1
    20% 1%
    Ex. 27 colloidal silica citric acid 2.4 1 1 1 1 1
    20% 1%
    Ex. 28 colloidal silica malic acid 2.4 1 1 1 1 1
    20% 1%
    Ex. 29 colloidal silica formic acid 2.6 1 1 1 1 1
    20% 1%
    Ex. 30 colloidal silica glycolic acid 2.8 1 1 1 1 1
    20% 1%
    Ex. 31 colloidal silica itaconic acid 2.9 1 1 1 1 1
    20% 1%
    Ex. 32 colloidal silica gluconic acid 2.9 1 1 1 1 1
    20% 1%
    Ex. 33 colloidal silica succinic acid 3.2 1 1 1 1 1
    20% 1%
    Ex. 34 colloidal silica acetic acid 3.8 2 1 1 1 2
    20% 1%
    Ex. 35 colloidal silica boric acid 7.8 2 1 1 1 2
    20% 1%
    Ex. 36 colloidal silica alanine 8.6 2 1 1 1 2
    20% 1%
    Ex. 37 colloidal silica glycin 8.6 2 1 1 1 2
    20% 1%
    C. Ex. 1 colloidal silica 10.3 4 1 1 1 3
    20%
    C. Ex. 2 colloidal silica aluminum nitrate 3.4 4 1 1 1 3
    25% 1%
    C. Ex. 3 colloidal silica ammonium molybdate 5.4 4 1 1 1 3
    20% 1%
    C. Ex. 4 cerium oxide 6.9 1 4 3 4 4
    25%
    C. Ex. 5 iron oxide 6.9 2 3 3 4 4
    25%
  • In the “Abrasive” column in Table 1:
  • “Colloidal silica” is colloidal silica having a mean particle size DSA of 80 nm and a mean particle size DN4 of 80 nm;
  • “Fumed silica” is fumed silica having a mean particle size DSA of 30 nm and a mean particle size DN4 of 90 nm;
  • “Cerium oxide” is cerium oxide (Ce2O3) having a mean particle size D50 of 450 nm; and
  • “Iron oxide” is iron oxide (α-Fe2O3) having a mean particle diameter D50 of 450 nm.
  • The mean particle diameters D50 of cerium oxide and iron oxide were measured using a Coulter counter “LS-230”, manufactured by Beckman Coulter Inc.
  • As shown in Table 1, each of the polishing compositions according to Examples 1 to 37 was not rated as poor for any rating item, and was rated as either very good or good for the “Comprehensive rating”. This result suggests that the polishing compositions according to Examples 1 to 37 are useful in applications for polishing a glass substrate. It was found from the rating results of the polishing compositions according to Examples 2, 6, 7 and 9 that, when the acid (polishing accelerator) is maleic acid, an organic acid, the stock removal rate improves, in particular, by setting the content of silicon dioxide (abrasive) to not less than 10 mass %, and more specifically in the range of 10 to 40 mass %. It was also found from the rating results of the polishing compositions according to Examples 11, 14, 15 and 17 that, when the acid is phosphoric acid, an inorganic acid, the stock removal rate improves, in particular, by setting the content of silicon dioxide to not less than 20 mass %, and more specifically in the range of 20 to 40 mass %. It was further found from the rating results of the polishing compositions according to Examples 1 to 5 and 10 to 13 that the stock removal rate improves, in particular, by setting the content of the acid to not less than 0.1 mass %, and more specifically in the range of 0.1 to 3 mass %.
  • The present examples and embodiments are to be considered as illustrative and not restrictive and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalence of the appended claims.

Claims (21)

1. (canceled)
2. (canceled)
3. (canceled)
4. (canceled)
5. (canceled)
6. (canceled)
7. (canceled)
8. (canceled)
9. (canceled)
10. The method according to claim 17, wherein the acid is hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, or boric acid.
11. The method according to claim 17, wherein the acid is acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, alanine, glycin, lactic acid, hydroxyethylidene diphosphonic acid, nitrilotris(methylene phosphonic acid), or phosphonobutane tricarboxylic acid.
12. (canceled)
13. (canceled)
14. (canceled)
15. (canceled)
16. (canceled)
17. A method for polishing a glass substrate, the method comprising:
preparing a polishing composition comprising silicon dioxide, an acid, and water; and
polishing the surface of a glass substrate, using the prepared polishing composition.
18. The method for polishing a glass substrate according to claim 17, wherein said polishing the surface of a glass substrate comprises:
preliminarily polishing the surface of the glass substrate; and
finish-polishing the surface of the preliminarily polished glass substrate, in which
the polishing composition is used in the finish-polishing of the surface of the preliminarily polished glass substrate.
19. The method for polishing a glass substrate according to claim 17, wherein said preparing a polishing composition comprises diluting the polishing composition with water.
20. The method for polishing a glass substrate according to claim 19, wherein the volume of water to be used for dilution of the polishing composition is not more than 50 times as large as the volume of the polishing composition before dilution.
21. The method according to claim 1, wherein the acid is at least one selected from the group consisting of phosphoric acid, pphosphonic acid, phosphinic acid, acetic acid, itaconic acid, methanesulfonic acid, formic acid, hydroxyethylidene diphosphonic acid, nitrilotris (methylene phosphonic acid), and phosphonobutane tricarboxylic acid.
US11/516,131 2003-11-04 2006-09-06 Polishing composition and polishing method Abandoned US20070004323A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/516,131 US20070004323A1 (en) 2003-11-04 2006-09-06 Polishing composition and polishing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003374664A JP2005138197A (en) 2003-11-04 2003-11-04 Polishing composition and polishing method
JP2003-374664 2003-11-04
US10/980,446 US20050136803A1 (en) 2003-11-04 2004-11-03 Polishing composition and polishing method
US11/516,131 US20070004323A1 (en) 2003-11-04 2006-09-06 Polishing composition and polishing method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/980,446 Division US20050136803A1 (en) 2003-11-04 2004-11-03 Polishing composition and polishing method

Publications (1)

Publication Number Publication Date
US20070004323A1 true US20070004323A1 (en) 2007-01-04

Family

ID=34674788

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/980,446 Abandoned US20050136803A1 (en) 2003-11-04 2004-11-03 Polishing composition and polishing method
US11/516,131 Abandoned US20070004323A1 (en) 2003-11-04 2006-09-06 Polishing composition and polishing method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US10/980,446 Abandoned US20050136803A1 (en) 2003-11-04 2004-11-03 Polishing composition and polishing method

Country Status (5)

Country Link
US (2) US20050136803A1 (en)
JP (1) JP2005138197A (en)
CN (1) CN1626599B (en)
MY (1) MY146039A (en)
TW (1) TW200528548A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130012104A1 (en) * 2010-03-31 2013-01-10 Hoya Corporation Manufacturing method of a glass substrate for a magnetic disk

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5090633B2 (en) * 2004-06-22 2012-12-05 旭硝子株式会社 Glass substrate polishing method
US7731864B2 (en) * 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum
JP4801437B2 (en) * 2005-12-21 2011-10-26 昭和電工株式会社 Polishing equipment
GB2433516B (en) * 2005-12-22 2010-11-03 Kao Corp Polishing composition for glass substrate
JP5008350B2 (en) * 2006-07-05 2012-08-22 花王株式会社 Polishing liquid composition for glass substrate
JP5332249B2 (en) * 2007-06-05 2013-11-06 旭硝子株式会社 Glass substrate polishing method
JP5013986B2 (en) * 2007-06-22 2012-08-29 花王株式会社 Manufacturing method of glass substrate
CN101451044B (en) * 2007-11-30 2013-10-02 安集微电子(上海)有限公司 Chemico-mechanical polishing liquid
US20100038584A1 (en) * 2008-08-13 2010-02-18 Fujimi Incorporated Polishing Composition and Polishing Method Using the Same
JP2011208261A (en) * 2010-03-30 2011-10-20 Dowa Metals & Mining Co Ltd Cathode plate, method of manufacturing cathode plate and method for metal electrolytic refining
JP5940278B2 (en) * 2010-10-27 2016-06-29 花王株式会社 Manufacturing method of glass hard disk substrate
JP2013030235A (en) * 2011-07-27 2013-02-07 Alphana Technology Co Ltd Rotating apparatus and method for manufacturing rotating apparatus
CN102358825B (en) * 2011-08-05 2013-08-21 清华大学 Polishing composition for sapphire wafer
JP6493207B2 (en) * 2013-06-27 2019-04-03 コニカミノルタ株式会社 Method for producing cerium oxide abrasive
JP2013214095A (en) * 2013-07-03 2013-10-17 Hoya Corp Method for producing substrate for mask blank, method for producing substrate with multilayer reflective film, method for producing reflective mask blank, and method for producing reflective mask
US10414947B2 (en) * 2015-03-05 2019-09-17 Cabot Microelectronics Corporation Polishing composition containing ceria particles and method of use
JP6730859B2 (en) * 2015-07-15 2020-07-29 株式会社フジミインコーポレーテッド Polishing composition and method for manufacturing magnetic disk substrate
CN110976883B (en) * 2019-12-10 2022-03-01 昆明理工大学 Method for reducing surface roughness of complex structure of selective melting 3D printing metal

Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US5997620A (en) * 1997-01-21 1999-12-07 Fujimi Incorporated Polishing composition
US6015506A (en) * 1996-11-26 2000-01-18 Cabot Corporation Composition and method for polishing rigid disks
US6190443B1 (en) * 1998-09-01 2001-02-20 Fujimi Incorporated Polishing composition
US6248143B1 (en) * 1998-01-27 2001-06-19 Showa Denko Kabushiki Kaisha Composition for polishing glass and polishing method
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6280490B1 (en) * 1999-09-27 2001-08-28 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US20010017007A1 (en) * 2000-02-03 2001-08-30 Toshiya Hagihara Polishing composition
US6309434B1 (en) * 1999-09-28 2001-10-30 Fujimi Incorporated Polishing composition and method for producing a memory hard disks
US6328774B1 (en) * 2000-02-23 2001-12-11 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US6387139B1 (en) * 1998-12-21 2002-05-14 Showa Denko K.K. Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
US6398827B1 (en) * 1999-07-02 2002-06-04 Nissan Chemical Industries, Ltd. Polishing composition
US6423125B1 (en) * 1999-09-21 2002-07-23 Fujimi Incorporated Polishing composition
US20020095872A1 (en) * 2000-11-24 2002-07-25 Nec Corporation Chemical mechanical polishing slurry
US20020102923A1 (en) * 2000-11-29 2002-08-01 Fujimi Incorporated Polishing composition and polishing method for polishing a substrate to be used for a memory hard disk employing it
US6602111B1 (en) * 1999-07-16 2003-08-05 Seimi Chemical Co., Ltd. Abrasive
US6620216B2 (en) * 2001-08-21 2003-09-16 Kao Corporation Polishing composition
US6679929B2 (en) * 2001-01-31 2004-01-20 Fujimi Incorporated Polishing composition and polishing method employing it
US20040065021A1 (en) * 2002-10-04 2004-04-08 Yasuhiro Yoneda Polishing composition
US6801396B1 (en) * 1994-01-21 2004-10-05 Hitachi Global Storage Technologies Netherlands B.B. Substrate independent superpolishing process and slurry
US6811583B2 (en) * 2001-11-28 2004-11-02 Fujimi Incorporated Polishing composition for a substrate for a magnetic disk and polishing method employing it

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001089748A (en) * 1999-07-16 2001-04-03 Seimi Chem Co Ltd Abrasive

Patent Citations (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6801396B1 (en) * 1994-01-21 2004-10-05 Hitachi Global Storage Technologies Netherlands B.B. Substrate independent superpolishing process and slurry
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US6015506A (en) * 1996-11-26 2000-01-18 Cabot Corporation Composition and method for polishing rigid disks
US5997620A (en) * 1997-01-21 1999-12-07 Fujimi Incorporated Polishing composition
US6248143B1 (en) * 1998-01-27 2001-06-19 Showa Denko Kabushiki Kaisha Composition for polishing glass and polishing method
US6190443B1 (en) * 1998-09-01 2001-02-20 Fujimi Incorporated Polishing composition
US6387139B1 (en) * 1998-12-21 2002-05-14 Showa Denko K.K. Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
US6478836B1 (en) * 1998-12-21 2002-11-12 Showa Denko K.K. Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
US6398827B1 (en) * 1999-07-02 2002-06-04 Nissan Chemical Industries, Ltd. Polishing composition
US6602111B1 (en) * 1999-07-16 2003-08-05 Seimi Chemical Co., Ltd. Abrasive
US6423125B1 (en) * 1999-09-21 2002-07-23 Fujimi Incorporated Polishing composition
US6280490B1 (en) * 1999-09-27 2001-08-28 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6309434B1 (en) * 1999-09-28 2001-10-30 Fujimi Incorporated Polishing composition and method for producing a memory hard disks
US6454820B2 (en) * 2000-02-03 2002-09-24 Kao Corporation Polishing composition
US20010017007A1 (en) * 2000-02-03 2001-08-30 Toshiya Hagihara Polishing composition
US6328774B1 (en) * 2000-02-23 2001-12-11 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US20020095872A1 (en) * 2000-11-24 2002-07-25 Nec Corporation Chemical mechanical polishing slurry
US20020102923A1 (en) * 2000-11-29 2002-08-01 Fujimi Incorporated Polishing composition and polishing method for polishing a substrate to be used for a memory hard disk employing it
US6645051B2 (en) * 2000-11-29 2003-11-11 Fujimi Incorporated Polishing composition and polishing method for polishing a substrate to be used for a memory hard disk employing it
US6679929B2 (en) * 2001-01-31 2004-01-20 Fujimi Incorporated Polishing composition and polishing method employing it
US6620216B2 (en) * 2001-08-21 2003-09-16 Kao Corporation Polishing composition
US6811583B2 (en) * 2001-11-28 2004-11-02 Fujimi Incorporated Polishing composition for a substrate for a magnetic disk and polishing method employing it
US20040065021A1 (en) * 2002-10-04 2004-04-08 Yasuhiro Yoneda Polishing composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130012104A1 (en) * 2010-03-31 2013-01-10 Hoya Corporation Manufacturing method of a glass substrate for a magnetic disk

Also Published As

Publication number Publication date
MY146039A (en) 2012-06-15
CN1626599B (en) 2010-11-03
TW200528548A (en) 2005-09-01
CN1626599A (en) 2005-06-15
JP2005138197A (en) 2005-06-02
US20050136803A1 (en) 2005-06-23

Similar Documents

Publication Publication Date Title
US20070004323A1 (en) Polishing composition and polishing method
US20070004322A1 (en) Polishing composition and polishing method
US7972398B2 (en) Polishing composition for glass substrate
US6569215B2 (en) Composition for polishing magnetic disk substrate
JP4516176B2 (en) Substrate cleaning solution for electronic materials
JP5283247B2 (en) Polishing liquid composition for glass substrate
US20070145014A1 (en) Polishing composition for glass substrate
US20040010979A1 (en) Polishing composition
GB2405151A (en) Polishing method and substrate for magnetic disk
GB2433515A (en) Polishing composition for hard disk substrate
JP4667848B2 (en) Polishing liquid composition for glass substrate
WO2011145501A1 (en) Glass etching composition, composition for glass polishing processing and glass polishing processing method
US9053736B2 (en) Method for manufacturing an aluminosilicate glass substrate for hard disks
JP2006193695A (en) Polishing composition
SG183091A1 (en) Glass substrate for information recording media, process for its production, and magnetic recording medium
CN100350008C (en) Polishing composition
JP4202201B2 (en) Polishing composition
JP6412714B2 (en) Polishing composition
JP4202172B2 (en) Polishing composition
JP3665731B2 (en) Manufacturing method of glass substrate for magnetic disk and manufacturing method of magnetic disk
JP5748331B2 (en) Polishing liquid composition for glass hard disk substrate
JP2004002163A (en) Production method for chemically strengthened glass and method of producing glass substrate for information recording medium
JP2015109128A (en) Polishing solution composition for glass hard disk substrate
JP2012128916A (en) Manufacturing method of glass hard disk substrate
CN115746712A (en) Polishing composition for polishing silicon substrate and preparation method and application thereof

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION