US20060291133A1 - Particulate Removal from an Electrostatic Chuck - Google Patents
Particulate Removal from an Electrostatic Chuck Download PDFInfo
- Publication number
- US20060291133A1 US20060291133A1 US11/463,175 US46317506A US2006291133A1 US 20060291133 A1 US20060291133 A1 US 20060291133A1 US 46317506 A US46317506 A US 46317506A US 2006291133 A1 US2006291133 A1 US 2006291133A1
- Authority
- US
- United States
- Prior art keywords
- gas
- electrostatic chuck
- chamber
- wafer
- wafer blade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Definitions
- the present invention relates generally to electrostatic chuck and in particular the present invention relates to the cleaning of particles from an electrostatic chuck.
- Electrostatic chucks are used in processing semiconductor devices.
- e-chucks are used to hold a semiconductor wafer in place during processing.
- Processing of the wafer typically takes place in a vacuum processing chamber.
- the e-chucks hold the wafer in place while it is being processed in the processing chamber.
- An e-chuck is generally a capacitor element having a conductor/insulator structure that is adapted to selectively generate an electrostatic filed between the wafer and an e-chuck to selectively hold the wafer in place during processing.
- particles as the result of the processing can accumulate on the e-chuck.
- processes such as depositions and etching can create particles that can accumulate on the e-chucks.
- a method of cleaning an electrostatic chuck in a processing chamber comprises directing a flow of gas across the electrostatic chuck to dislodge particles from the electrostatic chuck and removing the flow of gas and particles through an exhaust port in the processing chamber.
- the vacuum integrity of the chamber is not compromised during the cleaning of the electrostatic chuck.
- a semiconductor processing chamber system in yet another embodiment, includes a vacuum chamber, an electrostatic chuck, one or more gas inlets and one or more exhaust ports.
- the vacuum chamber is used to provide a pressure regulated environment.
- the electrostatic chuck received in the vacuum chamber adapted to selectively hold a wafer to be processed.
- the one or more gas inlets are adapted to direct a flow of gas on a surface of the electrostatic chuck to remove particles accumulated on the electrostatic chuck surface.
- the one or more exhaust ports are adapted to remove the flow of gas and particles from the chamber without breaking the vacuum integrity of the vacuum chamber.
- a wafer blade for placing and removing wafers on and from an electrostatic chuck in a semiconductor processing chamber.
- the wafer blade comprises a first surface and a second surface.
- the first surface is adapted to face the electrostatic chuck, the first surface has one or more gas inlets adapted to direct one or more flows of gas to a surface of the electrostatic chuck to remove particles form the surface of the electrostatic chuck.
- the second surface adapted to engage a wafer.
- FIG. 1 is a cross-sectional side view of a processing vacuum chamber of one embodiment of the present invention
- FIG. 2A is a bottom view of a wafer blade of one embodiment of the present invention.
- FIG. 2B is a side view of wafer blade of one embodiment of the present invention.
- FIG. 3 is a bottom view of a wafer blade of another embodiment of the present invention.
- FIG. 4 is a close up view of a slit opening of a gas inlet of one embodiment of the present invention.
- FIG. 5 is a close up view of an oval opening of a gas inlet of one embodiment of the present invention.
- FIG. 6 is a side view of an embodiment of a rotatable nozzle of a gas inlet of one embodiment of the present invention.
- the present invention allows for a situ cleaning of the surface of the e-chuck without the need to break the vacuum integrity of the chamber and without the loss in production time related to venting and manually cleaning the e-chuck.
- Embodiments of the present invention accomplish this by directing a gas flow across the e-chuck. As a result the particles are removed with the flow of gas. The gas is then vented through an exhaust port common to vacuum chambers without breaking the vacuum integrity of the chamber.
- FIG. 1 includes an e-chuck 102 in a chamber 110 .
- the chamber 110 includes gas inlets 104 that provide a flow of gas to remove accumulated particles on the e-chuck 102 . The gas flow and particles are removed through the exhaust outlet 106 . This is accomplished without breaking the vacuum of the chamber 110 .
- this embodiment only illustrates one exhaust output 106 , other embodiments include more than one exhaust outputs 106 .
- a wafer blade 108 is also illustrated in FIG. 1 .
- the wafer blade 108 is used to remove and place wafers on the e-chuck.
- the blade 108 is adapted to move into and out of the chamber 110 .
- the wafer blade 108 works in concert with wafer pins 112 to remove and place wafers on the e-chuck.
- the pins 112 are adapted to move up and out of the e-chuck 102 to receive wafers from the blade 108 .
- the pins 112 are further adapted to move down into the e-chuck 102 to place the wafer on the e-chuck 102 .
- the pins 112 are further adapted to remove a wafer by moving up and out of the e-chuck 102 and engaging the wafer.
- the blade 108 is then adapted to remove the wafer from the pins 112 .
- the wafer blade 108 is adapted to provide the stream of gas that removes the particles from the e-chuck 112 .
- An example of a wafer blade 200 of this embodiment is illustrated in FIG. 2 .
- a bottom (first surface) 201 has a plurality of gas inlets 202 that provide the stream of gas that removes the accumulated particles from the e-chuck.
- the advantage to this embodiment is that as the wafer blade 200 is moved across the e-chuck 112 (please refer to FIG. 1 ) when placing and removing wafers 204 from the e-chuck 112 , the flow of gas provided by the wafer blade 200 is provided in close proximity to the e-chuck 112 .
- the gas is adapted to flow each time a wafer 204 is placed on the e-chuck 112 . In another embodiment, the gas is adapted to flow each time a wafer 204 is removed from the e-chuck 112 . In still another embodiment, the gas is adapted to flow each time a wafer 204 is place and removed from the e-chuck 112 . Still further in other embodiments, the wafer blade 200 is passed over its associated e-chuck one or more times without a wafer on the e-chuck to remove the accumulated particles. Referring to FIG. 2B a side view of the wafer blade 200 of FIG. 2A is illustrated. As FIG.
- the gas inlets 202 extend from a bottom (first surface) 201 of the wafer blade 200 .
- a top (second surface) 203 of the wafer blade 200 is adapted to engage a wafer 204 .
- the bottom surface 201 of the wafer blade is adapted to face an associated e-chuck.
- FIG. 3 is a bottom view of the wafer blade 300 of this embodiment.
- the wafer blade 300 includes gas inlets 302 on the bottom surface (first surface) 311 of the wafer blade 300 .
- a top surface (second surface) (not shown) of the wafer blade 300 is adapted to engage a wafer 306 .
- arms 308 and 310 are pivotally coupled to the bottom surface 311 of the wafer chuck 300 by respective pivot connections 109 and 311 .
- arms 308 and 310 have gas inlets 304 .
- the arms are adapted to pivot out away from the wafer blade during an e-chuck cleaning. When the arms 308 and 310 are pivoted away from the wafer blade 300 more of the surface area of the e-chuck is subjected to the gas flow at a closer proximity to the gas inlets 302 and 304 .
- the embodiments openings of the gas inlets 104 , 202 , 302 and 304 and of FIGS. 1, 2A , 3 B and 3 are illustrated as generally being round in shape, in other embodiments this is not the case.
- the gas inlets 400 openings 402 are generally a rectangular slot and in the embodiment of FIG. 5 , the gas inlets 500 openings 502 are generally oval in shape.
- the gas inlets are adapted to rotate to disburse the gas flow in different directions. This embodiment is illustrated in the side view of a wafer blade 600 of FIG. 6 .
- the gas inlets 602 are coupled to a bottom surface (first surface) 601 of wafer blade 600 .
- a top surface (second surface) is adapted to selectively engage a wafer 604 .
- the gas inlets 602 of this embodiment are adapted to rotate as the flow of gas is being expelled from their respective openings 606 . With this embodiment, one or more gas inlets 602 rotate to expel the gas flow across generally the entire surface of an associated e-chuck to remove accumulated particles.
Abstract
The cleaning of particles from an electrostatic chuck. In one embodiment, a method of cleaning an electrostatic chuck in a processing chamber is disclosed. The method comprises directing a flow of gas across the electrostatic chuck to dislodge particles from the electrostatic chuck and removing the flow of gas and particles through an exhaust port in the processing chamber. In this embodiment, the vacuum integrity of the chamber is not compromised during the cleaning of the electrostatic chuck.
Description
- This application is a divisional of U.S. patent application Ser. No. 10/740,171, filed Dec. 18, 2003, and is related to and claims the benefit under 35 USC 119(e) of Provisional Application Ser. No. 60/503,701 (the '701 Application), filed on Sep. 17, 2003, both of which are incorporated in their entirety by reference.
- The present invention relates generally to electrostatic chuck and in particular the present invention relates to the cleaning of particles from an electrostatic chuck.
- Electrostatic chucks (e-chucks) are used in processing semiconductor devices. In particular, e-chucks are used to hold a semiconductor wafer in place during processing. Processing of the wafer typically takes place in a vacuum processing chamber. As stated above, the e-chucks hold the wafer in place while it is being processed in the processing chamber. An e-chuck is generally a capacitor element having a conductor/insulator structure that is adapted to selectively generate an electrostatic filed between the wafer and an e-chuck to selectively hold the wafer in place during processing. During processing, particles as the result of the processing can accumulate on the e-chuck. For example, processes such as depositions and etching can create particles that can accumulate on the e-chucks. These particles can compromise the surface of the e-chuck causing the e-chuck to no longer effectively hold a wafer in place during processing. If a wafer is dislodged as a result of an accumulation of particles, the wafer is either scrapped or reprocessed. If the problem persists, the general practice in the art is venting the chamber and manually cleaning the e-chuck. This, however, creates a significant loss in manufacturing time.
- For the reasons stated above and for other reasons stated below which will become apparent to those skilled in the art upon reading and understanding the present specification, there is a need in the art for a method effectively removing particles from the surface of the e-chuck without venting the chamber
- The above-mentioned problems and limitations existing in the prior art are addressed by embodiments of the present invention and will be understood by reading and studying the following specification.
- In one embodiment, a method of cleaning an electrostatic chuck in a processing chamber is disclosed. The method comprises directing a flow of gas across the electrostatic chuck to dislodge particles from the electrostatic chuck and removing the flow of gas and particles through an exhaust port in the processing chamber. In this embodiment, the vacuum integrity of the chamber is not compromised during the cleaning of the electrostatic chuck.
- In yet another embodiment, a semiconductor processing chamber system is disclosed. The chamber system includes a vacuum chamber, an electrostatic chuck, one or more gas inlets and one or more exhaust ports. The vacuum chamber is used to provide a pressure regulated environment. The electrostatic chuck received in the vacuum chamber adapted to selectively hold a wafer to be processed. The one or more gas inlets are adapted to direct a flow of gas on a surface of the electrostatic chuck to remove particles accumulated on the electrostatic chuck surface. Moreover, the one or more exhaust ports are adapted to remove the flow of gas and particles from the chamber without breaking the vacuum integrity of the vacuum chamber.
- In still another embodiment, a wafer blade for placing and removing wafers on and from an electrostatic chuck in a semiconductor processing chamber is disclosed. The wafer blade comprises a first surface and a second surface. The first surface is adapted to face the electrostatic chuck, the first surface has one or more gas inlets adapted to direct one or more flows of gas to a surface of the electrostatic chuck to remove particles form the surface of the electrostatic chuck. The second surface adapted to engage a wafer.
- The present invention can be more easily understood and further advantages and uses thereof more readily apparent, when considered in view of the description of the preferred embodiments and the following figures in which:
-
FIG. 1 is a cross-sectional side view of a processing vacuum chamber of one embodiment of the present invention; -
FIG. 2A is a bottom view of a wafer blade of one embodiment of the present invention; -
FIG. 2B , is a side view of wafer blade of one embodiment of the present invention; -
FIG. 3 is a bottom view of a wafer blade of another embodiment of the present invention; -
FIG. 4 , is a close up view of a slit opening of a gas inlet of one embodiment of the present invention; -
FIG. 5 , is a close up view of an oval opening of a gas inlet of one embodiment of the present invention; and -
FIG. 6 , is a side view of an embodiment of a rotatable nozzle of a gas inlet of one embodiment of the present invention. - In accordance with common practice, the various described features are not drawn to scale but are drawn to emphasize specific features relevant to the present invention. Reference characters denote like elements throughout Figures and text.
- In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific preferred embodiments in which the inventions may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that logical, mechanical and electrical changes may be made without departing from the spirit and scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the claims and equivalents thereof.
- The present invention allows for a situ cleaning of the surface of the e-chuck without the need to break the vacuum integrity of the chamber and without the loss in production time related to venting and manually cleaning the e-chuck. Embodiments of the present invention accomplish this by directing a gas flow across the e-chuck. As a result the particles are removed with the flow of gas. The gas is then vented through an exhaust port common to vacuum chambers without breaking the vacuum integrity of the chamber.
- One embodiment of a processing chamber of the present invention is illustrated in the cross-sectional side view of
FIG. 1 .FIG. 1 includes ane-chuck 102 in achamber 110. Thechamber 110 includesgas inlets 104 that provide a flow of gas to remove accumulated particles on thee-chuck 102. The gas flow and particles are removed through theexhaust outlet 106. This is accomplished without breaking the vacuum of thechamber 110. Although, this embodiment only illustrates oneexhaust output 106, other embodiments include more than oneexhaust outputs 106. Also illustrated inFIG. 1 , is awafer blade 108. Thewafer blade 108 is used to remove and place wafers on the e-chuck. Theblade 108 is adapted to move into and out of thechamber 110. Thewafer blade 108 works in concert with wafer pins 112 to remove and place wafers on the e-chuck. In particular, the pins 112 are adapted to move up and out of the e-chuck 102 to receive wafers from theblade 108. The pins 112 are further adapted to move down into the e-chuck 102 to place the wafer on the e-chuck 102. The pins 112 are further adapted to remove a wafer by moving up and out of the e-chuck 102 and engaging the wafer. Theblade 108 is then adapted to remove the wafer from the pins 112. - In one embodiment of the present invention, the
wafer blade 108 is adapted to provide the stream of gas that removes the particles from the e-chuck 112. An example of a wafer blade 200 of this embodiment is illustrated inFIG. 2 . As the bottom view of the embodiment ofFIG. 2 illustrates, a bottom (first surface) 201 has a plurality ofgas inlets 202 that provide the stream of gas that removes the accumulated particles from the e-chuck. The advantage to this embodiment is that as the wafer blade 200 is moved across the e-chuck 112 (please refer toFIG. 1 ) when placing and removingwafers 204 from the e-chuck 112, the flow of gas provided by the wafer blade 200 is provided in close proximity to the e-chuck 112. In one embodiment, the gas is adapted to flow each time awafer 204 is placed on the e-chuck 112. In another embodiment, the gas is adapted to flow each time awafer 204 is removed from the e-chuck 112. In still another embodiment, the gas is adapted to flow each time awafer 204 is place and removed from the e-chuck 112. Still further in other embodiments, the wafer blade 200 is passed over its associated e-chuck one or more times without a wafer on the e-chuck to remove the accumulated particles. Referring toFIG. 2B a side view of the wafer blade 200 ofFIG. 2A is illustrated. AsFIG. 2B illustrates, thegas inlets 202 extend from a bottom (first surface) 201 of the wafer blade 200. A top (second surface) 203 of the wafer blade 200 is adapted to engage awafer 204. Thebottom surface 201 of the wafer blade is adapted to face an associated e-chuck. - Referring to
FIG. 3 , another embodiment of awafer blade 300 is illustrated.FIG. 3 , is a bottom view of thewafer blade 300 of this embodiment. As illustrated, thewafer blade 300 includesgas inlets 302 on the bottom surface (first surface) 311 of thewafer blade 300. A top surface (second surface) (not shown) of thewafer blade 300 is adapted to engage awafer 306. In this embodiment,arms bottom surface 311 of thewafer chuck 300 byrespective pivot connections 109 and 311. As illustrated,arms gas inlets 304. In this embodiment, the arms are adapted to pivot out away from the wafer blade during an e-chuck cleaning. When thearms wafer blade 300 more of the surface area of the e-chuck is subjected to the gas flow at a closer proximity to thegas inlets - The embodiments openings of the
gas inlets FIGS. 1, 2A , 3B and 3 are illustrated as generally being round in shape, in other embodiments this is not the case. For example, in the embodiment ofFIG. 4 , thegas inlets 400 openings 402 are generally a rectangular slot and in the embodiment ofFIG. 5 , thegas inlets 500openings 502 are generally oval in shape. In yet another example, the gas inlets are adapted to rotate to disburse the gas flow in different directions. This embodiment is illustrated in the side view of awafer blade 600 ofFIG. 6 . As illustrated, thegas inlets 602 are coupled to a bottom surface (first surface) 601 ofwafer blade 600. A top surface (second surface) is adapted to selectively engage awafer 604. Thegas inlets 602 of this embodiment are adapted to rotate as the flow of gas is being expelled from theirrespective openings 606. With this embodiment, one ormore gas inlets 602 rotate to expel the gas flow across generally the entire surface of an associated e-chuck to remove accumulated particles. - Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement, which is calculated to achieve the same purpose, may be substituted for the specific embodiment shown. This application is intended to cover any adaptations or variations of the present invention. Therefore, it is manifestly intended that this invention be limited only by the claims and the equivalents thereof.
Claims (20)
1. A semiconductor processing chamber system, the chamber system comprising:
a vacuum chamber to provide a pressure regulated environment;
an electrostatic chuck received in the vacuum chamber adapted to selectively hold a wafer to be processed;
one or more gas inlets adapted to direct a flow of gas on a surface of the electrostatic chuck to remove particles accumulated on the electrostatic chuck surface; and
one or more exhaust ports adapted to remove the flow of gas and particles from the chamber without breaking the vacuum integrity of the vacuum chamber.
2. The chamber system of claim 1 , wherein each gas inlet has an opening that is in the shape of generally a slit.
3. The chamber system of claim 1 , wherein each gas inlet has an opening that is in the shape of generally an oval.
4. The chamber system of claim 1 , wherein each gas inlet has an opening in the shape of generally a circle.
5. The chamber system of claim 1 , further comprising:
a wafer blade adapted to place and remove wafers for processing on the surface of the electrostatic chuck, the wafer blade having a first surface adapted to face the surface of the electrostatic chuck and a second surface adapted to engage said wafers.
6. The chamber system of claim 5 , wherein the gas inlets extend from the first surface of the wafer blade.
7. The chamber system of claim 5 , wherein at least one of the gas inlets is adapted to rotate in relation to the first surface of the wafer blade to disburse gas flow across the surface of the electrostatic chuck.
8. A wafer blade for placing and removing wafers on and from an electrostatic chuck in a semiconductor processing chamber, the wafer blade comprising:
a first surface adapted to face the electrostatic chuck, the first surface having one or more gas inlets adapted to direct one or more flows of gas to a surface of the electrostatic chuck to remove particles form the surface of the electrostatic chuck; and
a second surface adapted to engage a wafer.
9. The wafer blade of claim 8 , wherein each gas inlet has an opening that is in the general shape of a slit.
10. The wafer blade of claim 8 , wherein each gas inlet has an opening that is in the general shape of an oval.
11. The wafer blade of claim 8 , wherein each gas inlet has an opening in the general shape of a circle.
12. The wafer blade of claim 8 , wherein at least one of the gas inlets extends out from the first surface of the wafer blade.
13. The wafer blade of claim 12 , wherein the at least one of the gas inlets is adapted to rotate in relation to the first surface of the wafer blade to disburse gas flow across the surface of the electrostatic chuck.
14. A processing chamber, the chamber comprising:
an electrostatic chuck adapted to selectively hold a wafer to be processed; and
a wafer blade adapted to selectively place the wafer on the electrostatic chuck, the wafer blade having at least one gas inlet adapted to pass a flow of gas to the electrostatic chuck.
15. The chamber of claim 14 wherein the at least one gas inlet passes the flow of gas to remove an accumulation of particles on the electrostatic chuck.
16. The chamber of claim 14 , wherein the at least one gas inlet has an opening that is in the general shape of at least one of a slit, an oval and a circle.
17. The chamber of claim 14 , wherein the at least one inlet is adapted to rotate to disperse the gas flow through the at least one inlet in different directions.
18. The chamber of claim 14 , further comprising:
at least one arm pivotly coupled to the wafer blade, the at least one arm including at least one gas inlet adapted to pass a flow of gas to the electrostatic chuck.
19. The chamber of claim 14 , wherein the at least one gas inlet has an opening that is in the general shape of at least one of a slit, an oval and a circle.
20. The chamber of claim 14 , wherein the at least on gas inlet is adapted to rotate to disperse the gas flow through the at least one inlet in different directions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/463,175 US20060291133A1 (en) | 2003-09-17 | 2006-08-08 | Particulate Removal from an Electrostatic Chuck |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50370103P | 2003-09-17 | 2003-09-17 | |
US10/740,171 US7097714B2 (en) | 2003-09-17 | 2003-12-18 | Particulate removal from an electrostatic chuck |
US11/463,175 US20060291133A1 (en) | 2003-09-17 | 2006-08-08 | Particulate Removal from an Electrostatic Chuck |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/740,171 Division US7097714B2 (en) | 2003-09-17 | 2003-12-18 | Particulate removal from an electrostatic chuck |
Publications (1)
Publication Number | Publication Date |
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US20060291133A1 true US20060291133A1 (en) | 2006-12-28 |
Family
ID=34279007
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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US10/740,171 Expired - Fee Related US7097714B2 (en) | 2003-09-17 | 2003-12-18 | Particulate removal from an electrostatic chuck |
US11/463,175 Abandoned US20060291133A1 (en) | 2003-09-17 | 2006-08-08 | Particulate Removal from an Electrostatic Chuck |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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US10/740,171 Expired - Fee Related US7097714B2 (en) | 2003-09-17 | 2003-12-18 | Particulate removal from an electrostatic chuck |
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US (2) | US7097714B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101146437B1 (en) * | 2005-06-30 | 2012-05-21 | 엘지디스플레이 주식회사 | Coater and operating method thereof |
US20120017938A1 (en) * | 2010-07-22 | 2012-01-26 | Varian Semiconductor Equipment Associates, Inc. | Platen cleaning |
CN109013561A (en) * | 2018-06-19 | 2018-12-18 | 中国科学院微电子研究所 | Remove the device and method of crystal column surface particle |
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US6249932B1 (en) * | 1999-01-29 | 2001-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for removing fine particles |
US20020153024A1 (en) * | 2001-03-19 | 2002-10-24 | Fuminori Akiba | Electrostatic chuck cleaning method |
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US20020197416A1 (en) * | 2001-06-21 | 2002-12-26 | Majewski Robert B. | Gas jet deposition with multiple ports |
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US20030178046A1 (en) * | 2002-03-19 | 2003-09-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for removing particles from wafer pods |
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Also Published As
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US7097714B2 (en) | 2006-08-29 |
US20050056305A1 (en) | 2005-03-17 |
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